JP2005277241A - Stage apparatus, exposure apparatus, and manufacturing method of device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stage apparatus, etc. whereby in an exposure apparatus using an electron beam, the reaction force and vibration caused by the movement of its stage are so suppressed without giving a wrong effect to the electron beam as to be able to increase its speed, acceleration, and accuracy. <P>SOLUTION: The stage apparatus 20 has a main movable body 230, a first counter mass 240, a second counter mass 250, a first electromagnetic actuator 221 comprising a first armature unit 221A coupled to the main movable body 230 and a first magnet unit 221B coupled to the first counter mass 240, and a second electromagnetic actuator 252 comprising a second magnet unit 252B coupled to the first counter mass 240 and a second armature unit 252A coupled to the second counter mass 250. Here, the main movable body 230 and the second counter mass 250 are so moved respectively in reciprocal directions as to cancel a reaction force F1 caused by the movement of the main movable body 230. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a projection exposure apparatus used in a photolithography process for manufacturing various microdevices such as a semiconductor element, an imaging element, a liquid crystal display element, or a thin film magnetic head, and more particularly, vibration associated with movement of a stage of a mask and a sensitive substrate. It is related with the stage apparatus which can suppress this.

Conventionally, illumination light (energy rays such as ultraviolet rays, X-rays, and electron beams) is irradiated onto a mask or the like on which a circuit pattern is drawn, and then through a projection imaging system having the same magnification, a predetermined reduction magnification or enlargement magnification. In microlithography equipment that forms circuit patterns such as semiconductor devices and liquid crystal display devices by projecting exposure onto sensitive substrates (semiconductor wafers or glass plates coated with a resist layer), a mask or sensitive substrate is placed. Then, a stage device is provided that moves precisely one-dimensionally or two-dimensionally in a plane (XY plane) under position servo control by a laser interferometer.
In such a stage apparatus, when the electromagnetic actuator is driven when the movable stage body is moved in the X direction or the Y direction, the magnitude according to the product of the mass of the movable stage body and the acceleration is accompanied by the acceleration and deceleration of the movable stage body. Reaction force (Newton's third law) is added to the surface plate, causing unnecessary vibrations in the projection optical system and mask stage mechanism mechanically coupled to the surface plate, and applying unnecessary stress to the device column. The mechanical arrangement of the structure or the structure itself is distorted.
For this reason, in order to absorb the kinetic energy generated when the stage is driven, the stage reaction force is mechanically released to the floor (ground) using a frame member (refer to Patent Document 1), or the reverse of the stage. A technique (see Patent Document 2) that suppresses reaction force and vibration by providing a counter mass that moves in a direction has been proposed.
Japanese Patent Laid-Open No. 11-162828 JP 2001-129777 A

  It is known that the latter technique is superior in order to increase the speed, acceleration, and accuracy of the stage apparatus. However, in an exposure apparatus using an electron beam, when the magnet part of the electromagnetic actuator that drives the stage moves, the surrounding magnetic field fluctuates and adversely affects the electron beam projected toward the sensitive substrate. For this reason, the electron beam exposure apparatus has a problem that it is difficult to increase the speed, acceleration, and accuracy of the stage apparatus.

  The present invention has been made in view of the above-described circumstances. In an exposure apparatus using an electron beam, the reaction force and vibration due to the stage movement are suppressed without adversely affecting the electron beam, thereby increasing the speed and acceleration. It is an object of the present invention to propose a stage apparatus, an exposure apparatus, and a device manufacturing method that can achieve high accuracy.

In the stage apparatus, the exposure apparatus, and the device manufacturing method according to the present invention, the following means are employed to solve the above problems.
According to a first aspect of the present invention, a stage device (20) includes a main movable body (230, 330) capable of reciprocating in at least one axial direction, and a first counter mass capable of reciprocating in a direction coaxial with the movement axis of the main movable body. (240, 340) and the second counter mass (250, 350), the first armature unit (221A, 222A, 321A) connected to the main movable body, and the first magnet unit ( 221B, 222B, 321B), a second magnet unit (252B, 253B, 352B, 353B) connected to the first counter mass, and a second counter mass. Second armature units (252A, 253A, 352A, 353A) of second electromagnetic actuators (252, 253, And 52,353), has made it to cancel a reaction force (F1) by the movement of the main movable member main movable member and a second countermass is moved in the opposite direction. According to the present invention, the reaction force due to the movement of the main movable body can be canceled while the movement amount of the first counter mass disposed between the main movable body and the second counter mass is minimized. Accordingly, since the first magnet unit and the second magnet unit connected to the first counter mass hardly move, the peripheral magnetic field can be kept substantially constant even when the stage device is driven.

For example, a linear motor can be used for the first electromagnetic actuators (221, 222).
Moreover, a linear motor or a voice coil motor can be used for the second electromagnetic actuator (252, 253, 352, 353).
In addition, if the first magnet unit (221B, 222B, 321B) and the second magnet unit (252B, 253B, 352B, 353B) are configured integrally, the stage device can be made compact and low in cost. Can do.

In the case of including the guide (202, 204) for guiding the first counter mass (240, 340) and / or the second counter mass (250, 350) along the movement axis, the first counter mass and / or the second counter mass (240, 340) is provided. By suppressing the rotational movement of the two counter masses, the rotational movement of the main movable body can also be suppressed.
The second counter mass (250, 350) is placed on the second surface plate (203) separated from the first fixed plate (201) on which the main movable body (230, 330) is placed. Then, since the vibration accompanying the movement of the second counter mass is not transmitted from the second surface plate to the first surface plate, transmission of external vibration to the main movable body can be suppressed.
In addition, in the case where the first buffer portion (271) is provided between the first counter mass (240, 340) and the first fixed plate (201), the movement of the first counter mass is minimized. To the limit.
Further, in the case where the second counter mass (250, 350) is connected to the mount (282) installed outside the apparatus via the second buffer portion (281), the reaction force of the main movable body is further suppressed. The vibration of the main movable body can be suppressed.

The first counter mass (240, 350) and / or the second counter mass (250, 350) are arranged outside the chamber (61) in which the main movable body (230, 330) is accommodated. Even when the main movable body is used in a vacuum atmosphere, the first counter mass and / or the second counter mass can be supported by an air bearing or the like.
In addition, the main movable body can always be held in a certain region with the return portion (260) that returns the second counter mass (250, 350) to a predetermined position.

Further, in the case where the second electromagnetic actuator (252, 253, 352, 353) is divided into a plurality at predetermined intervals in the direction orthogonal to the moving axis, the first counter is adjusted by adjusting the thrust of each actuator. By actively suppressing the rotational movement of the mass, the rotational movement of the main movable body can be suppressed.
The second counter mass (250, 350) is composed of a plurality of masses (251A, 251B, 351A, 351B) connected to the second electromagnetic actuators (252, 253, 352, 353), respectively. Each of the divided second electromagnetic actuators can be easily controlled and the apparatus can be prevented from being enlarged.

The second invention has a mask stage (20) that holds a mask (R) and a substrate stage (40) that holds a substrate (W), and exposes the pattern (PA) formed on the mask onto the substrate. In the exposure apparatus (EX), the stage apparatus (20) of the first invention is used for at least one of the mask stage and the substrate stage. According to the present invention, since the surrounding magnetic field does not fluctuate even when the stage apparatus is driven, an apparatus that is adversely affected by the fluctuation of the magnetic field can be used. Furthermore, the stage apparatus can be increased in speed, acceleration, and accuracy.
Further, in the case where the exposure apparatus (EX) is an electron beam exposure apparatus (EX) that exposes the substrate (W) by projecting the electron beam (EB) onto the mask (R), the exposure apparatus (EX) is affected by fluctuations in the magnetic field. The electron beam can reach a predetermined position on the substrate without any problem.

  According to a third invention, in the device manufacturing method including the lithography process, the exposure apparatus (EX) of the second invention is used in the lithography process. According to the present invention, a device in which a fine pattern is formed can be efficiently manufactured.

According to the present invention, the following effects can be obtained.
According to the stage device of the first aspect of the invention, since the first magnet unit and the second magnet unit connected to the first counter mass are hardly moved, the peripheral magnetic field is kept substantially constant even when the stage device is driven. be able to. Therefore, it is possible to dispose an apparatus that is adversely affected by fluctuations in the magnetic field around the stage apparatus. Further, it is possible to increase the speed, acceleration, and accuracy of the stage device.

  According to the exposure apparatus of the second invention, it is possible to increase the speed, acceleration, and accuracy of the stage apparatus while allowing the electron beam to reach a predetermined position on the substrate without being affected by fluctuations in the magnetic field. Therefore, a fine pattern can be efficiently exposed.

  According to the device manufacturing method of the third invention, it is possible to efficiently manufacture a device having a fine pattern formed thereon, thereby realizing a large capacity, high speed, large integration, and low price of the device. can do.

Embodiments of a stage apparatus, an exposure apparatus, and a device manufacturing method according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic diagram showing the configuration of the electron beam exposure apparatus EX.
The electron beam exposure apparatus EX is a pattern (device pattern) formed on the reticle R using an electron beam (electron beam) EB while synchronously moving the reticle (mask) R and the wafer (substrate) W in a one-dimensional direction. This is a scanning exposure apparatus of a step-and-scan system that transfers PA to each shot area on the wafer W via the projection optical system 30, that is, a so-called scanning stepper.
The electron beam exposure apparatus EX includes an electron gun 5 that emits an electron beam EB, and an illumination optical system that irradiates the reticle R by forming the electron beam EB emitted from the electron gun 5 into an electron beam EB having a predetermined shape. 10, a reticle stage 20 that holds a reticle R, a projection optical system 30 that projects and images an electron beam EB that has passed through the reticle R onto a wafer W, a wafer stage 40 that holds the wafer W, and an electron beam exposure apparatus EX. And a control device 50 (not shown) for controlling automatically. Of these, the reticle stage 20 and the wafer stage 40 are accommodated in chambers 61 and 62, and the illumination optical system 10 and the projection optical system 30 are accommodated in a housing 13 and a lens barrel 35, respectively, and are stored in a predetermined gas or vacuum. Be placed.
In the following description, the direction that coincides with the optical axis AX of the projection optical system 30 is the Z-axis direction, and the synchronous movement direction (scanning direction) of the reticle R and the wafer W is within the plane perpendicular to the Z-axis direction. The direction perpendicular to the direction, the Z-axis direction, and the X-axis direction (non-scanning direction) is defined as the Y-axis direction. Further, the directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

As the electron gun 5, for example, thermionic emission type lanthanum hexabolite (LaB6) or tantalum (Ta) is used.
The illumination optical system 10 includes a condenser lens 11 and a field selection deflector 12 including a two-stage electromagnetic deflector or electrostatic deflector in a housing 13. The electron beam EB emitted from the electron gun 5 is converted into a parallel beam by the condenser lens 11, and then deflected mainly in the X direction in the XY plane by the field selection deflector 12, so that predetermined irradiation of the reticle R is performed. Guided to the area. The deflection amount in the visual field selection deflector 12 is controlled by a control device 50 described later.

The reticle stage (stage device, mask stage) 20 is a stage device that can locally absorb reaction force that accompanies acceleration / deceleration of the stage in the direction of scanning exposure by applying a law of conservation of momentum. .
The two-dimensional position and rotation angle of the reticle stage 20 are measured in real time by the laser interferometer 27 with a predetermined resolution, with respect to the position change of the movable mirror 26 fixed to the upper end of the reticle stage 20. . The position of reticle stage 20 in the X direction is measured by a movable mirror (not shown) and a laser interferometer arranged so as to be substantially orthogonal to movable mirror 26 and laser interferometer 27.
The detailed configuration of reticle stage 20 will be described later.

  The projection optical system 30 uses a reduction system that reduces at a predetermined projection magnification β (β is, for example, ¼). A deflector 31, projection lenses 32 and 33, a contrast aperture 34, and the like are provided. The electron beam EB that has passed through the reticle R is guided by the deflector 31 to a first projection lens 32 after being deflected by a predetermined amount. Thereafter, the first projection lens 32 forms an image with a crossover at a point where the reticle R and the wafer W are internally divided by the reduction ratio, and then passes through the second projection lens 33 to a predetermined position on the wafer W. An image is formed at a projection magnification β. These optical system members are accommodated in the lens barrel 35.

A wafer stage (substrate stage) 40 includes a wafer holder 41 that holds the wafer W, and a wafer that finely drives the wafer holder 41 in three degrees of freedom in the Z-axis direction, θX direction, and θY direction in order to perform leveling and focusing of the wafer W. An XY table 43 that moves the table 42 and the wafer table 42 continuously in the Y-axis direction, and a wafer surface plate 44 that supports the XY table 43 movably in a two-dimensional direction along the XY plane. Prepare.
A plurality of air bearings (air pads) 45 which are non-contact bearings are fixed to the bottom surface of the XY table 43, and the XY table 43 is placed on the wafer surface plate 44 by the air bearings 45, for example, with a clearance of about several microns. Is supported by levitation.
The position of the wafer table 42 in the Y direction is measured in real time with a predetermined resolution by a laser interferometer 47 that measures the change in position of the movable mirror 46 fixed to the end of the wafer table 42 in the Y direction. Note that the position of the wafer table 42 in the X direction is measured by a movable mirror (not shown) and a laser interferometer arranged so as to be substantially orthogonal to the movable mirror 46 and the laser interferometer 47. At least one of these laser interferometers 47 is a multi-axis interferometer having two or more measurement axes. Based on the measurement values of these laser interferometers 47, the wafer table 42 (and thus wafer W) in the θZ direction. The amount of rotation and leveling can also be determined.

The control device 50 (not shown) controls the electron beam exposure apparatus EX in an integrated manner, and includes a storage unit that records various information, an input / output unit, and the like in addition to a calculation unit that performs various calculations and controls.
Then, for example, the positions of the reticle R and the wafer W are controlled based on the detection results of the laser interferometers 27 and 47 provided on the reticle stage 20 and the wafer stage 40, and a pattern image formed on the reticle R is converted into a wafer. The exposure operation for transferring to the shot area on W is repeated.
Further, based on the exposure data input from the input / output unit and the positional information of the reticle stage 20 and the wafer stage 40 detected by the laser interferometers 27 and 47, the electron beam EB generated by the visual field selection deflector 12 and the deflector 31 is used. The deflection amount of the electron beam EB by the visual field selection deflector 12 and the deflector 31 is controlled based on the obtained deflection amount.
As an input device of the input / output unit, there are a device that reads magnetic information created by a device for creating exposure data, a device that reads exposure information registered in the reticle R and wafer W, and the like.

Next, the reticle stage 20 will be described in detail. FIG. 2 is a perspective view showing the configuration of the reticle stage 20.
The reticle stage 20 includes a surface plate 201, a Y stage unit 210, an X stage unit 220, a first counter mass 240, a second counter mass 250, and the like, and moves the reticle R in the XY direction while placing the reticle R thereon.
The Y stage unit 210 includes a reticle holder 211 on which the reticle R is placed, a pneumatic linear actuator 212 that moves the reticle holder 211 in the Y direction, and the like.
The reticle holder 211 is a plate member made of ceramic or the like in which a circular opening is formed, and holds the reticle R around the opening by electrostatic adsorption or the like.
The air-type linear actuator 212 includes a stator 212B extending in the Y direction and a movable element 212A movable along the stator 212B. A specific configuration of the pneumatic linear actuator 212 is disclosed in Japanese Patent Laid-Open No. 2002-359170 (FIG. 2) and the like.
Then, by connecting the reticle holder 211 to the side wall in the X direction of the mover 212A, the reticle holder 211 and the mover 212A can move together in the Y direction. Since the air linear actuator 212 is driven by air, the surrounding magnetic field does not fluctuate even when the reticle holder 211 is moved in the Y direction. Further, even when the reticle holder 211 and the pneumatic linear actuator 212 are moved in the Y direction, the surrounding magnetic field does not fluctuate.

The X stage unit 220 includes linear motors (first electromagnetic actuators) 221, 222 and the like.
The linear motors 221 and 222 include prismatic stators 221B and 222B in which a number of strong permanent magnets are stacked in the X direction in a rectangular tube case, and coil windings that wrap around the stator in an annular shape. This is a shaft type linear motor combining the accommodated movers 221A and 222A. In the following description, the stators 221B and 222B are called magnet units 221B and 222B, and the movers 221A and 222A are called coil units 221A and 222A.
The movable elements 221A and 222A of the linear motors 221 and 222 are connected to both ends of the stator 212B of the pneumatic linear actuator 212 in the longitudinal (Y) direction, respectively, so that the Y stage unit 210 and the coil unit (movable element) are connected. 221A and 222A are integrated and can move along the X direction. In the following description, the coil holder (movable elements) 221A and 222A of the reticle holder 211, the pneumatic linear actuator 212, and the linear motors 221 and 222 are referred to as the main movable body 230.

The first counter mass 240 (240A, 240B) includes magnet units (stator) 221B, 222B of the linear motors 221, 222, support members 241, 242 connected to the magnet units 221B, 222B, and the like.
Support members 241 and 242 are connected to both ends in the longitudinal (X) direction of the magnet units 221B and 222B as stators of the linear motors 221 and 222, respectively. The support members 241 and 242 are composed of a pair of members 241A, 241B, 242A, and 242B having substantially the same shape, and each of the support members 241 and 242 is levitated and supported on the surface plate 201 by an air bearing or the like. In addition, each is linearly moved in the X direction along the guide surface 202 formed on the surface plate 201.
As a result, the magnet unit 221B and the support members 241A and 241B can move together in the X direction (moving axis) on the surface plate 201 as the first counter mass 240A, and the magnet unit 222B and the support members 242A and 242B The first counter mass 240B can be moved integrally in the X direction on the surface plate 201.

The second counter mass 250 (250A, 250B) is composed of a pair of members 251A, 251B and the like having the same shape, and is disposed on the side of the first counter mass 240A, 240B in the X direction.
Each of the members 251A and 251B is levitated and supported on the surface plate 201 by an air bearing or the like. In addition, each is linearly moved in the X direction along the guide surface 204 formed on the surface plate 201.
A voice coil motor is provided between the second counter mass 250A, 250B and the first counter mass 240A, 240B, specifically between the member 251A and the support member 241A and between the member 251B and the support member 242A. (Second electromagnetic actuators) 252 and 253 are provided.
The voice coil motors 252 and 253 include stators (magnet units) 252B and 253B connected to the support members 241A and 242A, and movers (coil units) 252A and 253A connected to the members 251A and 251B. .
As a result, the coil unit 252A and the member 251A can move integrally on the surface plate 201 in the X direction (moving axis) as the second counter mass 250A, and the coil unit 253A and the member 251B become the second counter mass 250B. The surface plate 201 can be moved integrally in the X direction.
Magnet units (stator) 252B and 253B are included in first counter masses 240A and 240B, respectively.

Linear encoders (reading head units) 261 and 262 for measuring the moving positions of the members 251A and 251B are provided on the surface plate 201 on the side surface in the Y direction of the members 251A and 251B of the second counter masses 250A and 250B. It is done. The scale portions (not shown) of the linear encoders 261 and 262 are fixed to the side walls of the members 251A and 251B.
Further, linear motors 263 and 264 are arranged on the surface plate 201 on the side in the Y direction of the members 251A and 251B of the second counter masses 250A and 250B. The movers 263A and 264A of the linear motors 263 and 264 are fixed to the side walls of the members 251A and 251B, while the stators 263B and 264B are fixed on the surface plate 201.
The linear encoders 261 and 262 and the linear motors 263 and 264 constitute an automatic neutral return system (ANRES: return unit) 260 that returns the second counter masses 250A and 250B to a predetermined position. That is, there is a disadvantage that the main movable body 230 and the counter masses 240 and 250 are slightly displaced by X due to a slight inclination of the entire exposure apparatus, a slight vibration of the surface plate 201, and the like. Therefore, by providing ANRES, the main movable body 230 and the counter masses 240 and 250 are automatically returned to the neutral position at a certain timing to eliminate such inconvenience.

Next, the operation of the reticle stage 20 described above will be described with reference to FIG.
FIG. 3 is a diagram schematically illustrating the relationship between the main movable body 230, the first counter mass 240, and the second counter mass 250.

First, as shown in FIG. 3A, the main movable body 230, the first counter mass 240, and the second counter mass 250 are arranged on the surface plate 201 in a predetermined positional relationship. That is, each is arranged at its initial position.
Next, as shown in FIG. 3B, the linear motors 221 and 222 are driven to move the main movable body 230 in the X + direction. Simultaneously with the driving of the linear motors 221 and 222, the voice coil motors 252 and 253 are driven to move the second counter mass 250 in the opposite direction to the main movable body 230, that is, in the X-direction.
Thus, by generating the thrust F1 generated from the linear motors 221 and 222 and the thrust F2 generated from the voice coil motors 252 and 253 with the same magnitude in the opposite direction, the main movable body 230 and the second counter mass are generated. The momentum conservation law can be established with the value 250. That is, the reaction force caused by the movement of the main movable body 230 in the X + direction is canceled out by the reaction force caused by the movement of the second counter mass 250 in the X− direction, and the vibration of the reticle stage 20 can be suppressed. That is, the reaction force F1 from the linear motors 221 and 222 and the reaction force F2 generated from the voice coil motors 252 and 253 are applied to the first counter mass 240 with the same magnitude in the opposite direction.
Therefore, when the main movable body 230 is moved, the first counter mass 240 hardly moves from the initial position. For this reason, since the magnet units 221B and 222B of the linear motors 221 and 222 and the magnet units 252B and 253B of the voice coil motors 252 and 253 included in the first counter mass 240 hardly move, the peripheral magnetic field hardly changes.
That is, according to the reticle stage 20 of the present embodiment, even if the main movable body 230, in other words, the X stage unit 220 is driven to move the reticle R in the X direction, the peripheral magnetic field does not fluctuate. Further, as described above, since the air stage linear actuator 212 is used for the Y stage unit 210, the surrounding magnetic field does not change even if the reticle R is moved in the Y direction. Therefore, it is possible to accurately guide the electron beam EB passing through the reticle R to a desired position.

Next, a method for exposing the image of the pattern PA of the reticle R onto the wafer W using the above-described electron beam exposure apparatus EX will be described. First, in parallel with loading of the reticle R onto the reticle stage 20, the wafer stage 40 is exposed. The wafer W is loaded on the.
The wafer W loaded on the wafer stage 40 is placed on the wafer stage 40 with high accuracy through various alignment processes. Then, based on the alignment result, the wafer stage 40 is moved, and exposure processing of the first shot (first shot area) of the wafer W is started.
Then, the electron beam EB emitted from the electron gun 5 and shaped into a square cross section (for example, 1 mm square) is deflected from the optical axis AX of the optical system by a predetermined distance by the visual field selection deflector 12 and irradiated with the reticle R. Guided to the area. Along with the irradiation of the electron beam EB to the irradiation region, a pattern image having a shape corresponding to the pattern formed in the region is given to the corresponding portion of the wafer W via the first projection lens 32 and the second projection lens 33. The image is projected at a reduction ratio (for example, 1/4). For each shot (irradiation), an area (area) of 250 μm square is transferred on the wafer W at a time. During projection, irradiation with the electron beam EB is repeated in units of subfields, and pattern images in each subfield are sequentially projected onto different transferred subfields on the wafer W.
These series of operations are performed by moving the reticle R and the wafer W at a speed of 4: 1 while synchronizing them so that the electron beam EB is 20 mm wide on the reticle R (5 mm width that is 1/4 times on the wafer W). The circuit pattern is exposed while swinging (scanning) with electromagnetic deflection.
Thus, in the electron beam exposure apparatus EX, coupled with the deflection width of the electron beam EB, the exposure time can be significantly shortened and the throughput can be dramatically improved.

  As described above, according to the stage apparatus according to the present invention, when the reticle R is moved, the change in the peripheral magnetic field hardly occurs, so that the electron beam EB is accurately guided to the desired position on the wafer W. be able to. Therefore, a fine pattern can be formed accurately.

Next, an application example of the reticle stage 20 will be described. FIG. 4 is a perspective view showing an application example of the reticle stage 20.
The reticle stage 20 shown in FIG. 4 includes a first counter mass 240 and a second counter mass 250 that can reciprocate only in the X direction, linear motors 221 and 222, voice coil motors 252 and 253, and the like. , A first counter mass 340 and a second counter mass 350 that can reciprocate only in the Y direction, and voice coil motors 321, 352, and 353 that move them. The basic configuration of the reticle stage 20 is disclosed in Japanese Patent Application Laid-Open No. 2002-353118 (FIG. 8) and the like, and the description thereof is omitted.
The voice coil motor 321 is disposed in the −Y direction of the linear motor 222. Specifically, a coil unit (movable element) 321A of the voice coil motor 321 is connected to a side wall of the coil unit (movable element) 222A of the linear motor 222. A magnet unit (stator) 321B extending in the X direction is arranged in the -Y direction of the coil unit (mover) 321A.
Further, magnet units (stator) 352B and 353B of voice coil motors 352 and 353 are arranged at both ends in the X direction of the magnet unit (stator) 321B.
The first counter mass 330 is configured by the magnet units (stator) 321B, 352B, 353B. The stator 212B of the air type linear actuator 212, the linear motors 221, 222, the support members 241, 242 connected to the linear motors 221, 222, etc. constitute the main movable body 330 that can move in the Y direction.
The coil units (movable elements) 352A and 353A of the voice coil motors 352 and 353 are connected to members 351A and 351B disposed at the ends in the −Y direction, and the second counter mass 350 ( 350A, 350B).
Although not shown, the members 351A and 351B are provided with a linear encoder and an ANRES (return unit). In addition, a guide surface for guiding the second counter masses 350A and 350B in the Y direction is provided on the lower surface side (on the surface plate 201) of the members 351A and 351B.

Then, the thrust generated from the voice coil motor 321 and the thrust generated from the voice coil motors 352 and 353 are generated with the same magnitude in the opposite direction, so that the main movable body 330 and the second counter mass 350 are between. The momentum conservation law can be established.
Therefore, when the main movable body 330 is moved in the Y direction, the first counter mass 340 hardly moves from the initial position. For this reason, since the magnet unit 321B of the voice coil motor 321 and the magnet units 352B and 353B of the voice coil motors 352 and 353 included in the first counter mass 340 hardly move, the peripheral magnetic field hardly changes.
In other words, according to the reticle stage 20 shown in FIG. 4, when the reticle R is moved in the Y direction, the peripheral magnetic field does not fluctuate even if the main movable body 330 moves in the Y direction. Further, the reticle stage 20 can accurately guide the electron beam EB passing through the reticle R to a desired position because the peripheral magnetic field does not fluctuate even when the reticle R is moved in the X direction.

  Note that the operation procedures shown in the above-described embodiment, or the shapes and combinations of the components are examples, and can be variously changed based on process conditions, design requirements, and the like without departing from the gist of the present invention. is there. For example, the present invention includes the following modifications.

  For example, the voice coil motors 252 and 253 may be replaced with linear motors equivalent to the linear motors 221 and 222. In this case, the magnet units of two linear motors connected to the same first counter mass are integrated, in other words, two coil units (movers) may be provided in one magnet unit (stator). . This makes it possible to reduce the size and cost of the device.

  Further, as shown in FIG. 5A, the surface plate 201 may be composed of two surface plates. Specifically, it is divided into a first fixed plate 201 on which the main movable body 230 and the first counter mass 240 are placed, and a second surface plate 203 on which the second counter mass 250 is placed. In this way, by configuring the surface plate with the first surface plate 201 and the second surface plate 203, vibration accompanying the movement of the second counter mass 250 is transmitted from the second surface plate 203 through the first surface plate 201. It is not transmitted to the main movable body 230, and a fine pattern can be accurately formed on the wafer W.

  Further, as shown in FIG. 5B, a buffer portion 271 may be provided between the surface plate 201 and the first counter mass 240. As the buffer 271, the surface plate 201 and the first counter mass 240 (support members 241 and 242) are connected by an elastic body such as rubber or a spring. As a result, even if the thrust F1 from the linear motors 221 and 222 and the thrust F2 from the voice coil motors 252 and 253 are not uniform, the difference force between the thrusts F1 and F2 (F1-F2) Can be received by the buffer portion 271 so that the first counter mass 240 is hardly moved. Thereby, the change of the surrounding magnetic field can be prevented more reliably.

Further, as shown in FIG. 5B, the second counter mass 250 may be coupled to a pedestal 282 installed outside the electron beam exposure apparatus EX via a buffer 281. When the first counter mass 240 is connected to an external frame via a buffer portion as in the prior art, a large reaction force due to the movement of the main movable body 230 could not be absorbed. It was necessary to apply vibrations or reduce the speed of the main movable body 230.
However, when the second counter mass 250 is connected to the external mount 282 via the buffer portion 281, the first counter mass 240 (more precisely, non-contact actuators, that is, linear motors 221 and 222, voice coils, and the like) Since the motors 252 and 253 are interposed, a large reaction force accompanying the movement of the main movable body 230 can be absorbed.
Thereby, the vibration of the main movable body 230 can be further suppressed.

Moreover, although the 2nd counter mass 250 was comprised by two 2nd counter mass 250A, 250B, it is good also as an integrated type, and since mass of a mass increases by this, the movement amount of the 2nd counter mass 250 decreases. There are advantages. However, there is a drawback that the gravity of the entire apparatus becomes too large, or the second counter mass 250 is easily rotated.
In addition, when comprised with two 2nd counter mass 250A, 250B like this embodiment, the thrust ratio of the two voice coil motors 252 and 253 is finely adjusted, and the rotational movement of the 1st counter mass 240 is carried out. Since it is difficult for the second counter masses 250A and 250B to rotate when trying to suppress, there is an advantage that the control is easy.

  In addition, two first counter masses 240A and 240B and two second counter masses 250A and 250B are arranged on both sides of the main movable body 230, but the first counter mass 240 or the second counter mass 250 is one. Also good. Therefore, the number of linear motors 221 and 222 and the number of voice coil motors 252 and 253 may be one.

  Further, the first counter mass 240 and / or the second counter mass 250 may be disposed outside the chamber 61 in which the main movable body 230 is accommodated. As a result, it is not necessary to use an expensive vacuum air bearing for the air bearing that floats and supports the first counter mass 240 and the second counter mass 250, so that the apparatus cost can be reduced.

  Further, the present invention is applicable not only to the reticle stage but also to the wafer stage. Both may be applied simultaneously, or may be applied to either one.

  The electron beam exposure apparatus may be configured to use a reticle, or may be configured to form a pattern directly on a wafer without using a reticle. Further, the magnification of the projection optical system may be not only a reduction system but also an equal magnification or an enlargement system.

  Further, as an exposure apparatus to which the present invention is applied, a step-and-repeat type exposure apparatus that exposes a mask pattern while the mask and the substrate are stationary and sequentially moves the substrate stepwise may be used.

  Further, as an exposure apparatus to which the present invention is applied, a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact without using a projection optical system may be used.

  Further, the use of the exposure apparatus is not limited to the exposure apparatus for manufacturing a semiconductor device. For example, an exposure apparatus for liquid crystal that exposes a liquid crystal display element pattern on a square glass plate and a thin film magnetic head are manufactured. Therefore, it can be widely applied to an exposure apparatus.

  As the light source of the exposure apparatus to which the present invention is applied, g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193 nm), and F2 laser (157 nm) are used. it can.

  Further, as the projection optical system, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material when far ultraviolet rays such as an excimer laser are used, and a catadioptric system or a reflection system when F2 laser or X-ray is used. (At this time, the reticle is also a reflection type), and when an electron beam is used, an electron optical system comprising an electron lens and a deflector may be used as the optical system. Needless to say, the optical path through which the electron beam passes is in a vacuum state.

  An exposure apparatus to which the present invention is applied assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  In addition, in the semiconductor device, the process of designing the function and performance of the device, the process of manufacturing a mask (reticle) based on this design step, the process of manufacturing a wafer from a silicon material, and the exposure apparatus of the above-described embodiment It is manufactured through a wafer processing process for exposing a pattern to a wafer, a device assembly process (including a dicing process, a bonding process, and a packaging process), an inspection process, and the like.

Schematic diagram showing the configuration of the electron beam exposure apparatus EX The perspective view which shows the structure of the reticle stage 20 Schematic diagram for explaining the operation of the reticle stage 20 A perspective view showing an application example of the reticle stage 20 Schematic diagram showing a variation of reticle stage 20

Explanation of symbols

20 Reticle stage (stage device, mask stage)
40 Wafer stage (substrate stage)
61 Chamber 201 Surface plate (first plate)
202, 204 Guide surface 203 Second surface plate 221, 222 Linear motor (first electromagnetic actuator)
221A, 222A Movers, coil units (first armature unit)
221B, 222B Stator, magnet unit (first magnet unit)
230 Main movable body 240 (240A, 240B) First counter mass 250 (250A, 250B) Second counter mass 251A, 251B Member (mass)
252 and 253 Voice coil motor (second electromagnetic actuator)
252A, 253A Movers, coil units (second armature unit)
252B, 253B Stator, magnet unit (second magnet unit)
260 ANRES (return part)
271 Buffer (first buffer)
281 Buffer (second buffer)
282 Mount 321 Voice coil motor (first electromagnetic actuator)
321A Movers, coil units (first armature unit)
321B Stator, magnet unit (first magnet unit)
330 Main movable body 340 First counter mass 350 (350A, 350B) Second counter mass 351A, 351B Member (mass)
352,353 Voice coil motor (second electromagnetic actuator)
352A, 353A Movers, coil units (second armature unit)
352B, 353B Stator, magnet unit (second magnet unit)
EB Electron beam (electron beam)
EX Electron beam exposure system (electron beam exposure system)
F1, F2 Thrust, reaction force R Reticle (mask)
PA pattern W wafer (substrate)

Claims (15)

A main movable body capable of reciprocating in at least one axial direction;
A first counter mass and a second counter mass capable of reciprocating in the same direction as the movement axis of the main movable body;
A first electromagnetic actuator comprising a first armature unit coupled to the main movable body and a first magnet unit coupled to the first counter mass;
A second electromagnetic actuator comprising a second magnet unit coupled to the first counter mass and a second armature unit coupled to the second counter mass;
Have
A stage apparatus characterized in that the main movable body and the second counter mass are moved in opposite directions to counteract the reaction force due to the movement of the main movable body.   The stage device according to claim 1, wherein the first electromagnetic actuator is a linear motor.   The stage device according to claim 1 or 2, wherein the second electromagnetic actuator is a linear motor or a voice coil motor.   The stage apparatus according to any one of claims 1 to 3, wherein the first magnet unit and the second magnet unit are integrally configured.   The stage apparatus according to any one of claims 1 to 4, further comprising a guide for guiding the first counter mass and / or the second counter mass along the movement axis.   The said 2nd counter mass is mounted on the 2nd surface plate isolate | separated from the 1st surface plate in which the said main movable body was mounted, The any one of Claims 1-5 characterized by the above-mentioned. The stage apparatus according to item.   The stage apparatus according to claim 6, wherein a first buffer portion is provided between the first counter mass and the first fixed plate.   The stage apparatus according to any one of claims 1 to 7, wherein the second counter mass is connected to a pedestal installed outside the apparatus via a second buffer portion.   9. The first counter mass and / or the second counter mass is disposed outside a chamber in which the main movable body is accommodated. 9. Stage equipment.   The stage apparatus according to any one of claims 1 to 9, further comprising a return unit that returns the second counter mass to a predetermined position.   The stage device according to any one of claims 1 to 10, wherein the second electromagnetic actuator is divided into a plurality at predetermined intervals in a direction orthogonal to the movement axis. .   The stage apparatus according to claim 10, wherein the second counter mass includes a plurality of masses respectively connected to the second electromagnetic actuator. In an exposure apparatus having a mask stage for holding a mask and a substrate stage for holding a substrate, and exposing the pattern formed on the mask to the substrate,
An exposure apparatus using the stage apparatus according to any one of claims 1 to 12 as at least one of the mask stage and the substrate stage.   The exposure apparatus according to claim 13, wherein the exposure apparatus is an electron beam exposure apparatus that projects an electron beam onto the mask to expose the substrate. 15. A device manufacturing method including a lithography process, wherein the exposure apparatus according to claim 13 or 14 is used in the lithography process.

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