JP2005266616A - Optical display device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily manufacture a bright optical display device having a large aperture ratio, while adopting a bottom emission system which is allowed to be easily manufactured, and to secure sufficiently large space, without generating mutual restriction between light-emitting layers and electronic elements. <P>SOLUTION: In the optical display device D1 in which a plurality of pixels, consisting of light emitting layers 3 and electronic elements 9 for controlling the pixels are arranged on a transparent substrate 1 in a manner of layers and the light emitted from each light-emitting layer 3 is projected from the side of the lower transparent substrate 1, and the electronic elements 9 are formed on the upper layer of the light-emitting layers 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an optical display device in which a plurality of pixels composed of a light emitting layer and electronic elements that control the pixels are arranged in a layer on a transparent substrate, and emits light emitted from the light emitting layer from the lower transparent substrate side. The present invention relates to an optical display device suitable for organic EL, inorganic EL, electronic paper, or a mixture thereof, and a method for manufacturing the same.

  Active matrix organic EL (electroluminescence) displays are mainly classified into a bottom emission system and a top emission system. FIG. 54A is a cross-sectional view of a bottom emission type organic EL display. In the bottom emission method, a pixel control electronic element 9 such as a thin film transistor is incorporated on a transparent substrate 1 such as glass, and an organic EL light emitting layer 3 is installed on the side of the electronic element 9 so that the emitted light from there is directed toward the transparent substrate 1. It has a structure that emits light. FIG. 54B is a cross-sectional view of a top emission type organic EL display. In the top emission method, an electronic element 9 for a pixel control element such as a thin film transistor is formed on a substrate 1, a light emitting layer 3 made of organic EL is formed on the electronic element 9, and light emitted therefrom is directed upward of the substrate 1. It is structured to emit light. In both methods, the lower electrode 2 and the upper electrode 4 are formed on the upper and lower surfaces of the light emitting layer 3, and the barrier layers 6a and 6b (organic barrier layer 6a and SiNx seal) having a two-layer structure are formed on the upper layer of the upper electrode 4. A side wall protective film 5 is formed on the side of the stop film 6b).

  In any of the above-mentioned methods, an organic EL display, such as a thin film transistor for controlling a pixel, is formed by forming a semiconductor film and an insulator film on a substrate and stacking a plurality of layers in a manner to form an integrated circuit. It is made by processing. In addition, it is necessary for the organic EL to keep a current flowing during light emission. When an amorphous silicon thin film transistor whose characteristics are unstable when a current is applied is used, a current stabilization circuit is incorporated. In some cases, amorphous silicon is irradiated with laser to form poly-silicon, and a thin film transistor is manufactured to improve current stability.

  By the way, in the organic EL display, a barrier layer for preventing oxygen and moisture harmful to the organic EL from entering the light emitting layer is formed. In the above bottom emission method, since this barrier layer is formed in the direction opposite to the light emitting direction, there is no problem with light transmittance, and the barrier layer is thickened to prevent intrusion of oxygen and moisture. This is an advantageous method for extending the life of the display.

  However, since an electronic element such as a thin film transistor as a pixel control element must be formed on the same plane substrate as the organic EL light emitting layer, the light emitting layer and the electronic element must be disposed in a predetermined region, The area of the EL light-emitting layer and the area of the electronic element are mutually constrained. That is, if the area of the electronic element is widened with emphasis on the function of the electronic element, the area of the light emitting layer is reduced and the light emission intensity is reduced. On the other hand, if the area of the light emitting layer is increased in consideration of the light emission intensity, For this reason, a problem arises in that the space for this is narrowed and the function of the electronic element is reduced. In particular, in the case of an amorphous silicon thin film transistor, it is necessary to continue the current for the pixel display time without change over time, so it becomes necessary to incorporate a current stabilization circuit with a plurality of thin film transistors, and the occupied area of the transistor is further expanded. The area (aperture ratio) occupied by the light emitting layer is further narrowed, and the light emission intensity tends to be low. Further, since the light emitting layer is vulnerable to heat and is greatly deteriorated by heating, an electronic element such as a thin film transistor for pixel control needs to be formed before forming the light emitting layer. For this reason, it is necessary to manufacture a light emitting layer having a relatively low yield after a thin film transistor having a high price composition ratio, which raises the total cost of the issuing device.

  On the other hand, in the top emission method, a thin film transistor is formed on a substrate, an organic EL light emitting layer is mounted thereon after insulating with an insulator film, a barrier layer is further formed thereon, and a light emitting beam is emitted upward. Take the configuration to irradiate. Therefore, there is no restriction on the area between the electronic element and the light emitting layer, and there is an advantage that the light emitting layer and the electronic element can take a sufficient area. However, in the top emission system, a barrier layer is further formed on the light emitting layer, and the emitted light is emitted through the barrier layer by irradiating the emitted light upward. For this reason, if the effect of preventing infiltration of oxygen and moisture is increased by increasing the thickness of the barrier layer or increasing the number of barrier layers, there has been a problem that the visibility is reduced accordingly.

  Further, in the conventional organic EL display, since the light emitting layer is easily deteriorated by heat, it is necessary to use an amorphous silicon thin film transistor that can be formed at a low temperature. However, since the organic EL light emitting layer is a current light emitting element, it is necessary to form a current stabilizing circuit or the like in order to obtain a desired brightness. In order to make it perfect, there is a problem in using amorphous silicon having unstable characteristics as a semiconductor film of a thin film transistor. In order to solve this problem, a thin film transistor is also produced after amorphous silicon is modified into poly silicon by means of laser annealing or the like, but there is a problem that the manufacturing cost increases.

  These problems are not limited to active matrix organic EL displays, but are common to optical display devices such as inorganic EL displays and electronic paper.

  Accordingly, an object of the present invention is to easily manufacture a bright optical display device having a large aperture ratio while adopting a bottom emission method that is easy to manufacture, and the light emitting layer and the electronic device are mutually restricted. Sufficient space can be secured without affecting the visibility, and gas and moisture can be prevented from entering the light emitting layer, and electronic devices with high current stability can be mounted at low cost. It is to propose an optical display device and a method for manufacturing the same.

  The optical display device of the present invention is an optical display device in which a plurality of pixels composed of a light emitting layer and electronic elements for controlling the pixels are arranged in a layer on a transparent substrate, and light emitted from the light emitting layer is emitted from the lower transparent substrate side. In the display device, the electronic element is provided in an upper layer than the light emitting layer. Here, one electronic element may be used to control one pixel (light emitting layer), or one electronic element may be used to control a plurality of pixels (light emitting layer).

  According to the present invention, the emitted light from the light emitting layer is emitted from the lower transparent substrate side, and the electronic device is provided in an upper layer than the light emitting layer. However, there is no inconvenience that the electronic element blocks the emitted light. That is, a space can be secured between the electronic element and the light emitting layer without being restricted by each other. In particular, since the area of the light emitting layer can be increased without being restricted by the area of the electronic element, an optical display device having a high aperture ratio can be realized.

  A barrier layer for preventing oxygen or moisture from entering the light emitting layer is provided above the light emitting layer. According to this invention, since the emission direction of the emitted light is on the lower transparent substrate side and the barrier layer is provided above the light emitting layer, the emitted light does not pass through the barrier layer without passing through the barrier layer (transparent substrate side). ). Therefore, for example, by increasing the thickness of the barrier layer or increasing the number of barrier layers, it is possible to increase the effect of preventing gas and moisture from entering while maintaining the visibility.

  The electronic element includes a circuit (current stabilization circuit) for supplying a steady current corresponding to the light emission intensity required for the light emitting layer. Also, the electronic element is characterized in that a crystalline silicon integrated circuit chip. Further, the electronic device is an integrated circuit having a polycrystalline silicon thin film transistor as a basic component. Conventionally used amorphous silicon thin film transistors have a relatively low speed and have a low current drive stability. According to the present invention, since the electronic element is provided with a circuit (current stabilization circuit) for flowing a steady current, or is a chip-type crystalline silicon integrated circuit or a polycrystalline silicon thin film transistor, an amorphous silicon thin film transistor Compared to the above, high-speed processing and high current stable driving performance can be realized at low cost.

  The electronic element is an amorphous silicon thin film transistor. Amorphous silicon thin film transistor, since the characteristics are unstable, it is necessary to incorporate a current stabilization circuit during operation. According to the present invention, even if the electronic devices as an amorphous silicon thin film transistor, it is possible to take a sufficient area occupied by the transistors, it is easy to incorporate current stabilization circuit (circuit for supplying a constant current). It is not necessary to produce the thin film transistor from an amorphous silicon denatured poly-silicon can be achieved cost reduction of manufacturing cost.

  The electronic element is embedded in the barrier layer. In accordance with the present invention, the electronic device because it is embedded in the barrier layer, it is possible to reduce the thickness of the optical display device.

  The light-emitting layer, or an organic EL, or, or an inorganic EL, or an electronic paper, or, and characterized in that they are mixed. According to the present invention, an organic EL display, an inorganic EL display or electronic paper displays, the same effects can be obtained.

  In the method for manufacturing an optical display device of the present invention, a plurality of pixels formed of a light emitting layer and an electronic element for controlling the pixels are arranged in a layer on a transparent substrate, and emitted light from the light emitting layer is emitted from the lower transparent substrate side. in the method for manufacturing an optical display device which, after forming a luminescent layer on the upper surface side of the transparent substrate, and forming an electronic element in an upper layer than the light emitting layer. According to the present invention, a transparent substrate by sequentially forming a light emitting layer and electronic element, an optical display device according to the first aspect is produced. The electronic element may be formed by laminating thin films to form an amorphous silicon thin film transistor or embedding a chip type crystalline silicon transistor or the like.

  In the method for manufacturing an optical display device of the present invention, a plurality of pixels formed of a light emitting layer and an electronic element for controlling the pixels are arranged in a layer on a transparent substrate, and emitted light from the light emitting layer is emitted from the lower transparent substrate side. In the method for manufacturing an optical display device, a plurality of pixels made of a light emitting layer are formed on a transparent substrate, and a plurality of electronic elements for controlling the pixels are formed on the opposite substrate side arranged to face the transparent substrate. wherein the superposing two substrates so that the electronic element facing inward. According to this invention, after forming the light emitting layer and the electronic element at positions opposite to each other on the different substrates, the optical display device according to claim 1 is manufactured by superimposing them. Since the light emitting layer and the electronic device are formed on different substrates, the light emitting layer is not deteriorated due to heating during the formation of the electronic device, and the yield is improved overall.

  According to the optical display device and the manufacturing method thereof of the present invention, it is possible to secure a sufficient space without being restricted by the light emitting layer and the electronic device by providing the electronic device above the light emitting layer. to become. For example, with respect to the light emitting layer, it is not necessary to consider the position and area of the electronic element, and a wide area of the light-emitting layer, it is possible to increase the luminous intensity. As for the electronic device, it is possible to widen the area, or facilitate the incorporation of the current stabilizing circuit, it becomes possible or to enhance the function. In other words, it is possible to easily manufacture a bright optical display device having a large aperture ratio while adopting a bottom emission method that is easy to manufacture, without using a top emission method in which sealing film formation is difficult. Become.

  By providing a barrier layer that prevents gas and moisture from entering the light-emitting layer above the light-emitting layer, the barrier layer is thickened while maintaining visibility, or multiple barrier layers are used to increase the effect of preventing gas and water from entering. It is also possible to extend the life of the optical display device.

  The light emitting layer is vulnerable to heat and is severely deteriorated by heating. Therefore, conventionally, an electronic element such as a thin film transistor for a pixel control element has to be formed on a substrate before forming a light emitting layer. According to the manufacturing method of an optical display device of the present invention, after the formation of the electronic element and the light-emitting layer on different substrates, using the method of bonding the respective other even if the high temperature heating in the formation of electronic devices The light emitting layer formed on the substrate is not affected. That is, a relatively yield poor emission layer, and a high price composition ratio electronic devices, it is possible to manufacture each independently, it is realized improvement in yield as a whole. Further, if a chip-type crystalline silicon integrated circuit or the like is used as the electronic element, high-speed processing and current stabilization are facilitated.

  Hereinafter, the optical display device of the present invention will be described in detail with reference to the drawings, taking an organic EL display and a method for manufacturing the same as examples. However, in addition to organic EL, the present invention can also be applied to inorganic EL, electronic paper, or a mixture of these.

(First embodiment)
FIG. 8 is a cross-sectional view of the optical display device D1 of the present embodiment. The optical display device D1 of the present embodiment is an active matrix type optical display in which pixels composed of a light emitting layer 3 made of an organic light emitting material and electronic elements (semiconductor elements) as pixel control elements are arranged in a matrix. Device D1. This optical display device D1 employs a bottom emission method, and emitted light is irradiated downward (in the direction of the arrow in FIG. 8) from the light emitting layer 3 toward the lower transparent substrate 1 side.

  A light emitting layer 3 made of an organic light emitting material is formed in a matrix on the upper surface side of a transparent substrate 1 such as glass via a transparent electrode 2. A back electrode 4 is laminated on the light emitting layer 3 so as to cover the upper surface thereof, and a side wall protective film 5 is formed so as to cover the outer periphery of the light emitting layer 3. One light emitting layer 3 corresponds to one pixel.

Double barrier layers 6a and 6b are formed so as to cover the transparent substrate 1 on which the light emitting layer (pixel) 3 is formed. The first barrier layer 6a is an organic gas / barrier film such as a barrier, and the second barrier layer 6b is a gas / barrier film made of a silicon nitride film Si ₃ N ₄ or the like. When there are protrusions on the surface of the light emitting layer 3, the thickness of the barrier layer is uneven, and a situation in which gas or moisture enters from a thin or defective portion of the barrier layer occurs. Therefore, in the present embodiment, the surface of the light emitting layer 3 is flattened by the first barrier layer 6a, and the thickness of the second barrier layer 6b is made uniform to reliably prevent the ingress of gas and moisture. . That is, by making the barrier layers 6a and 6b have a double structure, the effect of preventing gas and moisture from entering the light emitting layer 3 is enhanced and the life is extended. This optical display device D1 has a barrier layer 6a, 6b having a double structure to enhance the prevention of gas and moisture intrusion, but adopts a bottom emission method in which emitted light is irradiated from the transparent substrate 1 side. Even if the barrier layers 6a and 6b have a double structure and are thickened, the visibility as a display is not affected, and it is possible to enhance the effect of preventing gas and moisture from entering while maintaining the visibility. ing.

  A planarizing film 7 and an organic film 8 are sequentially laminated on the barrier layers 6a and 6b. An electronic element 9 is embedded in the organic film 8 so as to be aligned with the light emitting layer 3 in the thickness direction of the optical display device D1. Even if the electronic element 9 is arranged so as to overlap the upper layer of the light emitting layer 3, the emitted light from the light emitting layer 3 is not blocked because it is irradiated downward, and the light emitting layer 3 and the electronic element are not blocked. Therefore, the light emitting layer 3 is not pressed by the presence of the electronic element 9. Therefore, the electronic element 9 and the light emitting layer 3 are not subject to area restrictions, and a sufficient occupied area can be secured for both the electronic element 9 and the light emitting layer 3.

  The electronic element 9 is a chip-type crystalline silicon integrated circuit manufactured in advance elsewhere. Here, the electronic element 9 may be a thin film transistor formed directly at a predetermined position, but from the viewpoint of operating speed and current stabilization, a steady current corresponding to the light emission intensity required for the chip-type light emitting layer is passed. whether the circuit, or whether it is crystalline silicon integrated circuit, or, it is desirable to mount an integrated circuit as a basic component of the polycrystalline silicon thin film transistor. When a thin film transistor is mounted, it is necessary to mount an amorphous silicon thin film transistor that can be formed at a low temperature because it is necessary to prevent deterioration of the light emitting layer 3 due to heat generated during the formation of a semiconductor film. Although this amorphous silicon thin film transistor needs to incorporate a current stabilizing circuit during operation, the optical display device D1 of the present embodiment can sufficiently take up the area occupied by the transistor as described above. Easy to incorporate a ballast circuit.

  The light emitting layer 3 and the electronic element 9 are electrically connected by a contact hole 10. The tact hole 10 is formed so as to penetrate the organic film 8, the planarizing film 7, and the first and second barrier layers 6a and 6b. The contact hole 10 is filled with a conductive paste such as silver paste, wiring is provided in a predetermined pattern between the contact hole 10 and the electronic element 9, and the back electrode 4 and the electronic element of the light emitting layer 3 are provided. 9 is established.

  On the organic film 8 in which the electronic element 9 is embedded, a predetermined pattern of wiring 12 and an insulating film 13 are formed so as to cover them.

(Production method)
Next, a manufacturing method of the optical display device D1 of the present embodiment will be described with reference to FIGS.

1. Formation of Light-Emitting Layer A transparent electrode 2 such as an ITO (Indium Tin Oxide) film is deposited on a transparent substrate (glass substrate) 1 by a technique such as sputtering, electron beam (EB), or vapor deposition. Next, the light emitting layer 3 having a predetermined height is formed on the transparent electrode 2 in a matrix using a hard mask. On the upper surface of the light emitting layer 3, a back electrode 4 is formed, and a side wall protective film 5 that covers the side wall of the light emitting layer 3 and protects the side wall is formed. FIG. 1 is a view showing a state in which a transparent electrode 2, a light emitting layer 3, a back electrode 4, and a sidewall protective film 5 are formed on a transparent substrate 1.

2. Formation of Barrier Layer Next, the first barrier layer 6a is formed from an organic gas / barrier film such as valylene in the same vacuum. Thereafter, in order to further enhance the barrier effect, a silicon nitride film Si ₃ N ₄ is formed at a low temperature of 100 ° C. or lower so as to cover the first barrier layer 6a to form the second barrier layer 6b. 6b has a double structure. FIG. 2 is a diagram showing a state in which the barrier layers 6a and 6b are formed.

3. Planarization Next, the planarization film 7 is formed of a low melting point organic material. The planarizing film 7 is formed by applying a low melting point material on the substrate surface by spin coating, curtain nozzle coating, or dip coating. Further, after applying the low melting point material, planarization may be performed by a flat plate press. FIG. 3 is a view showing a state in which the planarizing film 7 is formed.

4). Attaching Organic Film An organic film 8 having a thickness of about 10 μm to 200 μm is attached so as to cover the planarizing film 7. The organic film 8 is attached using thermocompression bonding. However, an organic film having a low melting point is used so that the light emitting layer 3 is not damaged by heat at the time of pasting, and the organic film 8 is thermocompression bonded at a temperature that does not damage the light emitting layer 3. FIG. 4 is a view showing a state where the organic film 8 is attached by thermocompression bonding.

5). Embedding the electronic element The electronic element 9 is embedded in the attached organic film 8. The electronic element 9 is a silicon integrated circuit in which a pixel control element is formed, and is embedded in the organic film 8 by a heating press. FIG. 5 is a diagram showing a state in which the electronic element 9 is embedded.

6). Formation of Contact Hole Next, a contact hole 10 for connecting the back electrode 4 of the light emitting layer 3 and an electronic element 9 described later is formed. The contact hole 10 is formed so as to penetrate the organic film 8, the planarizing film 7, the first and second barrier layers 6 a and 6 b and reach the back electrode 4, and reactive ion etching such as BOSH etching. Or it is formed by laser processing. In order to prevent damage to the light emitting layer due to moisture, the contact hole 10 is preferably formed in a vacuum state or a nitrogen atmosphere. FIG. 6 is a diagram showing a state in which the contact hole 10 is formed.

7). Pouring the conductive material into the contact hole A paste-like conductive material 11 is poured into the formed contact hole 10. The conductive material 11 preferably has a low melting point conductivity such as a silver paste. Thereafter, a connecting portion 10a is formed in a predetermined pattern on the organic film 8 so as to connect the electronic device 9 and the contact hole 10, and the back surface electrodes of the electronic device 9 and the light emitting layer 3 are formed through the contact hole 10 and the connecting portion 10a. 10 is connected.

8). Wiring formation Wiring 12 and insulating film 13 are formed in a predetermined pattern on organic film 8 to complete optical display device D1. FIG. 8 is a diagram showing an active matrix optical display device D1 of the present embodiment. The optical display device D1 is a bottom emission type organic EL display, and the emitted light is irradiated downward (in the direction of an arrow in FIG. 8) from the light emitting layer 3 through the transparent substrate 1, and an image is displayed.

(Second Embodiment)
FIG. 13 shows a cross-sectional view of the optical display device D2 of the second embodiment. As shown in FIG. 12, the optical display device D2 of the present embodiment is configured by bonding a block A on the transparent substrate 1 side and a block B on the counter substrate 15 side.

(Production method)
The block A on the transparent substrate 1 side includes a transparent electrode 2, a light emitting layer 3, a back electrode 4, a side wall protective film 5, double barrier layers 6 a and 6 b, a planarizing film 7, and a contact hole 10. The points to be formed are the same as in the first embodiment. An organic film 14 having a predetermined thickness is formed on the planarizing film 7, and the contact hole 10 including the organic film 14 is formed. FIG. 9 is a diagram illustrating a state in which the contact hole 10 is formed after the organic film 14 is formed. Next, as shown in FIG. 10, a paste-like conductive material 11 is poured into the contact hole 10 to peel off the organic film 14. FIG. 11 is a diagram illustrating a state where the organic film 14 is peeled off. The tip of the conductive material 11 is in a state protruding from the planarizing film 7 by the thickness. When the contact hole 10 is filled with the conductive material 11, the conductive material 11 may flow out of the contact hole 10 and adhere to unnecessary portions, but it is unnecessary by peeling the organic film 14. The conductive material 11 can be removed.

  In the block B on the counter substrate 15 side, chip-type electronic elements 9 are embedded at a pixel pitch at a position corresponding to the light emitting layer 3 on the counter surface side of the counter substrate 15. Specifically, the embedding of the electronic element 9 is as follows. A transparent thermoplastic resin film is laminated on the surface of the counter substrate 15. Instead of the transparent thermoplastic resin film, a transparent thermoplastic resin may be applied to form a film, or the counter substrate 15 made of a transparent thermoplastic resin may be used. Such a counter substrate 15, kept heated in advance by a heater or the like before embedding of the electronic devices 9, moderately to plastically deformable and became transparent thermoplastic resin film on, transferred to fill the electronic device 9. After the electronic element 9 is placed on the transparent thermoplastic resin film, it may be transferred so as to be embedded by pressing. Although the counter substrate 15 is heated by a heater or the like, since the light-emitting layer 3 and the electronic device 9 is formed on the different substrates 1, 15, respectively, degradation of the light emitting layer 3 causes the heating during embedding of the electronic devices 9 Will not cause. Conventionally, it has been necessary to use an amorphous silicon thin film transistor that can be formed at a low temperature in order to prevent the light emitting layer 3 from being deteriorated. A silicon integrated circuit can be mounted.

  The opposing surface of the counter substrate 15 which the electronic device 9 is embedded, the wiring 12 and the insulating film 13 is formed in a predetermined pattern. Also, the position corresponding to the contact hole 10 of the transparent substrate 1 side, a contact hole 14 to reach the electronic device 9 through the insulating film 13 is formed. The conductive material in the contact hole 14 and is filled, a ball solder 16 is formed at its tip.

  The block A of the transparent substrate 1 side, and a block B of the counter substrate 15 side, and the light-emitting layer 3 and the electronic device 9 is superposed so that the inner. Thereafter, laser irradiation to the ball solder 16, by locally heating, achieving connection between the rear surface electrode 4 and the electronic element 9 of the light-emitting layer 3, to complete the optical display device D2 (Figure 13).

(Third embodiment)
FIG. 15 is a sectional view of an optical display device D3 according to the third embodiment. In the optical display device D3 of the present embodiment, an amorphous silicon thin film transistor 19 is mounted instead of the crystalline silicon integrated circuit (electronic element) 9 of the optical display device D2 of the second embodiment. A thin film transistor may be formed using amorphous silicon that has been modified into polycrystalline silicon by laser annealing.

(Production method)
FIG. 14 is a diagram for explaining a manufacturing method of the optical display device D3 which is the organic EL display of the present embodiment. On the transparent substrate 1, a current stabilization circuit is provided at a position corresponding to each pixel (light emitting layer 3) from the electronic element 19 using the amorphous silicon thin film or the polycrystalline silicon thin film as a semiconductor film. Each is formed. The transparent substrate 1 and the counter substrate 15 are bonded together with the light emitting layer 3 and the electronic element 9 inside. In the optical display device D3 of the present embodiment, there is no area limitation due to the relationship between the electronic element 19 and the light emitting layer 3, and the area occupied by the electronic element 19 can be increased, so that a current stabilization circuit is incorporated. Is also easy. Also in the first embodiment, it is optional to mount an amorphous silicon thin film transistor as necessary.

(Electronic element transfer method)
When the electronic element 9 is a chip-type electronic element, it is mounted by a micro assembly technique (MAT). MAT is one of the transfer methods of the electronic element 9 that transfers the electronic element 9 that controls a plurality of pixels onto an optical display device substrate (the transparent substrate 1 or the counter substrate 15). This is a proposed method. The following electronic element selective transfer method MAT proposed by the inventors of the present application is particularly suitable for the optical display devices D1, 2, 3 of the present invention. The optical display devices D1, 2, 3 of the present invention are bottom emission systems, and it is not necessary to consider light transmission to the side where the electronic elements 9, 19 and the wiring 12 are arranged. For this reason, the optical display devices D1, 2, 3 of the present invention have a high degree of freedom in wiring design, and can be arbitrarily designed without having to avoid the positions of the electronic elements 9, 19 as shown in FIG. 39, for example. It is. In addition, the width of the wiring 12 can be increased, and a signal can be transmitted stably. Further, the size of the electronic elements 9 and 19 can be increased, and by incorporating a circuit capable of controlling a large number of pixels, it is possible to reduce the number of transfer by the transfer method described below. Further, the size of the electronic elements 9 and 19 and the pitch of the wirings 12 may be increased, and precise positional accuracy is not required when arranging the electronic elements, and high production efficiency can be realized. In addition, since the electrode pad for connection with the light emitting layer can be designed to be large, alignment in the bonding of the transparent substrate 1 and the counter substrate 15 becomes easy, and the connection between the electrodes is stabilized. Therefore, when the following selective transfer method is applied to the optical display devices D1, 2, 3 of the present invention having such advantages, a highly accurate position can be obtained at the time of transferring the electronic element 1 or bonding the two substrates 1,15. Matching is unnecessary, and high production efficiency can be realized. In addition, since the degree of freedom of wiring is high, wiring with various designs is possible. However, as will be described later, wiring is formed inside the electronic elements 9 and 19 so that the wiring 12 on the substrates 1 and 15 has a broken line shape. Then, various designs of wiring can be performed using a screen mask. Since the size of the electronic elements 9 and 19 can be increased, as will be described later, the electronic elements 9 and 19 are arranged almost at the center of the pixel (light emitting layer) 3 in the i row and j column, so that one electronic element 9 is arranged. , 19 is also suitable for controlling a plurality of pixels (light emitting layer) 3. The electronic element selective transfer method MAT proposed by the inventors will be described below.

  The electronic device selective transfer method applied to the present invention is an electronic device transfer method in which an electronic device for controlling a plurality of pixels is transferred onto a display substrate (transparent substrate 1, counter substrate 15). A step of fixing the electronic element substrate having the integrated circuit formed on the surface to the holding substrate, a step of fixing the electronic element obtained by cutting the electronic element substrate for each integrated circuit to the pickup substrate, and a step on the pickup substrate. A step of selectively attracting and holding an electronic element on a pickup device and transferring the electronic element to a display substrate, the electronic element forming substrate having an electronic element in a first direction on the display substrate in the first direction. array pitch px arrangement pitch of px / m obtained by dividing the natural number m, and, for a second direction perpendicular to the first direction on the display substrate contact A plurality of electronic elements are formed so as to have an arrangement pitch of py / n obtained by dividing the arrangement pitch py of the electronic elements in the second direction by a natural number n, and a display is made from among the electronic elements transferred to the pickup substrate. array pitch px of electronic elements on a substrate, by selectively attracted and held by the pick-up device only electronic devices corresponding to py, characterized by transferring the display substrate.

  Select transfer method for electronic devices applied to the present invention, when transferring an electronic device for controlling a plurality of pixels in a single integrated circuit on a display substrate, an integrated circuit for controlling a plurality of pixels is formed with a plurality of the surface electronic adsorption and fixing the substrate element on the holding substrate, and fixing the electronic device in the pick-up substrate obtained by cutting the substrate for an electronic device for each integrated circuit, to selectively pick-up device an electronic device on the pick-up board by holding a step of transferring the display substrate, the substrate for the electronic device, for the first direction obtained by dividing the array pitch px of the electronic device in a first direction on the display substrate by a natural number m px / M and the second direction orthogonal to the first direction, the arrangement pitch of the electronic elements in the second direction on the display substrate. py plurality forming the electronic element so that the array pitch of py / n obtained by dividing the natural number n and the direction to the pick-up device, the vacuum suction holes for performing chucking electronic device, corresponding to the first direction to be formed by the arrangement pitch of px, and the second is formed by the arrangement pitch of py in a direction corresponding to the direction, from the electronic device has been transferred to the pickup substrate, an electronic device on a display substrate Only the electronic elements corresponding to the arrangement pitches px and py are selectively attracted and held by the pickup device and transferred to the display substrate.

  The electronic device selective transfer method applied to the present invention is such that when an electronic device for controlling a plurality of pixels is transferred onto a display substrate by a single integrated circuit, a plurality of integrated circuits for controlling the plurality of pixels are formed on the surface. Fixing the electronic device substrate to the holding substrate, fixing the electronic device obtained by cutting the electronic device substrate for each integrated circuit to the pickup substrate, and selectively picking up the electronic devices on the pickup substrate A step of adsorbing and holding the device on the display substrate and transferring it to the display substrate, wherein the electronic element substrate has a natural number m of the arrangement pitch px of the electronic elements in the first direction on the display substrate in the first direction. arrangement pitch of dividing the px / m, and a second direction perpendicular to the first direction electronic element in a second direction on the display substrate A plurality of electronic elements are formed so as to obtain an array pitch of py / n obtained by dividing the array pitch py by a natural number n, an electronic element stage for mounting the pickup substrate, a substrate stage for mounting a display substrate, and a vacuum A pickup device having a vacuum chuck with suction holes and an X-axis adjustment mechanism, a Y-axis adjustment mechanism, and a Z-axis adjustment mechanism for aligning the pickup device are provided. A mounting having a rotation angle adjusting mechanism, and the suction holes are formed at an arrangement pitch of px in a direction corresponding to the first direction and at an arrangement pitch of py in a direction corresponding to the second direction. using the apparatus, from the electronic device has been transferred to the pickup substrate, to correspond to the array pitch px, py electronic elements on a display substrate And only electronic devices selectively adsorbed and held on the pickup device, characterized by transferring the display substrate. In the electronic device selective transfer method applied to the present invention, the electronic device is a single integrated circuit that controls 3 colors × 4 pixels arranged in 2 rows and 6 columns. in the center the electronic device is characterized in that it is transcribed.

  The electronic device selective transfer method applied to the present invention includes an arrangement pitch of px / m obtained by dividing the arrangement pitch px of the electronic elements in the first direction on the display substrate by a natural number m on the holding substrate, and The electronic elements are formed at an arrangement pitch of py / n obtained by dividing the arrangement pitch py of the electronic elements in the second direction orthogonal to the direction of 1 by a natural number n. Depending on the pitches px and py, electrons are selected for every m natural numbers (every m-1) in the first direction, and every n natural numbers (every n-1) in the second direction. An element will be selected. At this time, since the transfer is performed using the pickup device, only the selected electronic element is attracted and held by the pickup device, and the arrangement of the unselected electronic elements is erroneously arranged as in the prior art. Is prevented from being disturbed.

  According to another aspect of the present invention, there is provided a method of selectively transferring an electronic element, wherein a surface on which an integrated circuit of an electronic element is formed is formed on a holding substrate in a step of fixing an electronic element substrate having a plurality of integrated circuits formed thereon to the holding substrate. The electronic element substrate is turned upside down in the process of fixing the electronic element to the pickup substrate by cutting down and bonding the electronic element substrate for each integrated circuit with the surface facing the holding substrate of the electronic element substrate facing downward Thus, after being transferred to the pickup substrate, the electronic element substrate is cut for each integrated circuit.

  According to this, the electronic element substrate is transferred to the pickup substrate so that the surface of the integrated circuit is directed to the surface, and then the surface is cut in a predetermined size in order to form the electronic element. The integrated circuit surface can be confirmed from the side, and alignment can be easily performed. In addition, since the electronic elements are attracted and held by the pickup device while maintaining the arrangement pitches px and py, the arrangement of the unselected electronic elements can be transferred without being disturbed.

  According to another aspect of the present invention, there is provided a method for selectively transferring an electronic element, comprising: a step of fixing an electronic element substrate on which a plurality of integrated circuits are formed to a holding substrate; downward and adhered to the surface in contact with the holding substrate of the substrate for an electronic device, the bonded so that state toward the holding substrate side integrated circuit surface, an electronic device obtained by cutting the substrate for the electronic device for each integrated circuit In the step of fixing the substrate to the pickup substrate, the electronic element substrate on the holding substrate is cut for each integrated circuit, and then transferred to the pickup substrate so that the electronic element substrate is turned upside down.

  According to this, since the integrated circuit surface of the electronic device is formed so as to face the holding substrate side, the mechanical polishing step for making the electronic device to a predetermined thickness and the cutting to be cut into a predetermined size chips or the like is prevented from adhering to the integrated circuit surface in step. Similarly to the first aspect of the invention, since the electronic elements are attracted and held by the pickup device while maintaining the arrangement pitches px and py, the arrangement of the unselected electronic elements can be transferred without being disturbed.

  An electronic element selective transfer method applied to the present invention includes an adhesive force between a holding substrate and an electronic element substrate in a step of fixing an electronic element substrate on which a plurality of integrated circuits are formed to the holding substrate, and the electronic element substrate. It is desirable that the adhesive force between the pickup substrate and the electronic element substrate in the step of fixing the electronic element obtained by cutting the substrate for each integrated circuit to the pickup substrate is different.

  According to this, the adhesive force between the holding substrate and the electronic element substrate and the adhesive force between the pickup substrate and the electronic element substrate are set to arbitrarily different adhesive forces. This makes it possible to cope with the difference between the holding force required in the process performed on the holding substrate and the holding force required in the process performed after the transfer to the pickup substrate.

  The method of selecting the transfer electronic device applied to the present invention, the adhesive means between the holding substrate and the electronic device substrate in the step of fixing the electronic device substrate that said integrated circuit is formed with a plurality of the holding substrate, for the electronic element and adhesive means to the substrate for pickup board and the electronic device in the step of fixing the electronic device obtained by cutting the substrate for each integrated circuit to the pickup substrate is different it is desirable.

  According to this, the adhesion means between the holding substrate and the electronic element substrate and the adhesion means between the pickup substrate and the electronic element substrate are set to arbitrarily different means. For example, a sheet whose adhesive force is changed by ultraviolet rays is used as an adhesion means between the holding substrate and the electronic element or the electronic element substrate, and a heat treatment is applied to the adhesion means between the pickup substrate and the electronic element or the electronic element substrate. it can be used sheets of changing the adhesion by.

  In the electronic device selective transfer method applied to the present invention, a transparent thermoplastic resin film is formed on the surface of the display substrate, and the electronic device on the pickup substrate is selectively attracted and held by the pickup device on the display substrate. In the transferring step, the surface of the pickup device that adsorbs the electronic elements is preliminarily coated with fluororesin, and it is desirable to hold the electronic elements by plastic deformation of the transparent thermoplastic resin film.

  According to this, a transparent thermoplastic resin film is formed on the surface of the display substrate, and the electronic element is held by plastic deformation of the transparent thermoplastic resin film. The transparent thermoplastic resin film, which can be plastically deformed, is in close contact with the bottom and side surfaces of the electronic element, and provides a frictional force effect over a wide area compared to close contact with only the bottom surface, thus holding the electronic element firmly can do. In addition, since the surface of the pickup device that adsorbs the electronic elements is preliminarily coated with fluororesin, the pickup device does not adhere to the transparent thermoplastic resin film, and the surface of the transparent thermoplastic resin film It is possible to prevent the surface of the element from being soiled and the arrangement of the arranged electronic elements from being erroneously disturbed.

  The electronic element is held by plastic deformation of the transparent thermoplastic resin film in the direction opposite to the adsorption force by the pickup apparatus when the electronic element adsorbed on the pickup apparatus contacts the transparent thermoplastic resin film. It is desirable to hold the electronic element by plastically deforming the transparent thermoplastic resin film by pressing after placing the electronic element on the transparent thermoplastic resin film under pressure. The transparent thermoplastic resin film is preferably formed by laminating a transparent thermoplastic polymer film on a display substrate.

  According to this, first, when the electronic element adsorbed on the pickup device comes into contact with the transparent thermoplastic resin film, the pickup device applies pressure air in the direction opposite to the adsorption force to place the electronic element on the transparent thermoplastic resin. It is supposed to be placed on the membrane. That is, the electronic element is disposed on the transparent thermoplastic resin film so that the electronic element is pressed with the air pressure by the pickup device, and the electronic element and the transparent thermoplastic resin film are in close contact with each other. Further, according to this, the electronic device is pressed after being arranged on the transparent thermoplastic resin film. In the pressing method, the transparent thermoplastic resin film may be heated and then pressed by a pressing device or the like, or the pressing device or the like may be heated and pressed. At the time of pressing, the entire display substrate may be pressed together after all the electronic elements have been arranged, or may be pressed after arranging an arbitrary number of electronic elements. In addition, it is more desirable from the viewpoint of flat film formation to laminate a transparent thermoplastic polymer film on a display substrate to form a transparent thermoplastic resin film.

  Further, in the electronic device selective transfer method applied to the present invention, after the electronic device is adsorbed and held on the display substrate, a transparent ultraviolet curable resin film is formed on the surface of the electronic device and the surface of the display substrate. The transparent UV curable resin film is selectively cured by irradiating ultraviolet rays from the side where the electronic element is not held, and then the transparent UV curable resin film on the surface of the electronic element is removed to selectively display the electronic element on the display substrate. It is desirable to transfer to.

  According to this, after holding the electronic device on the display substrate, a transparent ultraviolet curable resin film is formed so as to cover the surface of the electronic device and the surface of the display substrate, and ultraviolet irradiation is performed from the back side of the display substrate. Because UV rays are transmitted through the display substrate, which is normally transparent, the transparent UV curable resin film is cured over all parts except the upper surface of the electronic element (the surface not in contact with the display substrate or the transparent thermoplastic resin film). Will be allowed to. Thereafter, when the uncured transparent ultraviolet curable resin film on the upper surface of the electronic element is removed, a transparent resin film cured by ultraviolet rays is uniformly formed in the peripheral portion except the upper surface of the electronic element, and the wiring drawn from the upper surface of the electronic element Will be formed stably.

  In the electronic device selective transfer method applied to the present invention, an electrode pad for connecting a signal line is formed on the surface of the electronic device, the length and width are 30 μm or more and 500 μm or less, and the thickness is it There is 100μm or less of silicon chips or polycrystalline silicon chip than 20μm is desirable from the standpoint of ease of implementation. Further, it is more desirable that a protective film made of a silicon nitride film or a silicon oxide film is formed on the surface of the electronic element from the viewpoint of protecting the electronic element and circuits formed thereon. In addition, after forming the pixel control function on the surface of the crystalline silicon substrate or the polycrystalline silicon substrate, the electronic element is mechanically polished on the back surface so as to have a thickness of 20 μm or more and 100 μm or less, and then sandblasting or laser processing. by, that the length and width of which has been cut so as to be 30μm or more 500μm or less, further preferably from the viewpoint of production efficiency and processing accuracy.

  In addition, while the wiring that passes through the electronic elements that control the plurality of pixels is formed, the wiring corresponding to the wirings of the display that are connected to the internal wirings of the electronic elements in a broken line shape when the wiring is formed on the display substrate. It is desirable to form by screen printing using a screen mask on which a predetermined pattern is formed. Here, the screen mask is preferably a metal mask using a thin metal foil.

  According to this, an electronic element that controls a plurality of pixels is assumed, but the electronic element is positioned between a data line, a gate line, and a pixel line, and the data line is vertically and horizontally centered on the electronic element. Wiring is required. For this reason, wiring that passes through the inside of the electronic element is formed, and after the electronic element is transferred by the selective transfer method of the electronic element according to claims 1 to 6, a plurality of pixels are controlled. When forming the wiring such as the data line formed on the display substrate connected to the wiring passing through the inside of the electronic element to be formed, the wiring such as the data line becomes a broken line, so that the predetermined corresponding to the wiring such as the data line A screen mask on which a pattern is formed can be used. As a result, a pattern wiring connected to the electronic element can be formed by a method of printing and applying a wiring material directly on the display substrate. In particular, since the optical display device D2 of the present invention has a high degree of freedom in wiring, it can be wired in various designs. However, the wiring 12 on the substrate 15 is formed in a broken line by forming the wiring inside the electronic element 9. Then, wiring of various designs becomes possible using a screen mask. In this regard, the conventional wiring method is expensive and complicated, such as depositing a thin film of a wiring material on the entire surface of the display substrate, transferring the pattern by photolithography, etching the wiring material thin film, removing the resist film, and the like. It was a manufacturing process. Further, the screen mask as described above could not be used, and screen printing could not be performed.

  An electronic element mounting apparatus used in the electronic element selective transfer method applied to the present invention is an electronic element mounting apparatus according to the electronic element selective transfer method, wherein the mounting apparatus is mounted on the pickup substrate. The electronic device is selectively attracted and held by a pickup device and transferred to a display substrate. The electronic device stage for placing the pickup substrate, the substrate stage for placing the display substrate, and vacuum suction A pickup device having a vacuum chuck in which holes are formed, both the electronic element stage and the substrate stage each have a rotation angle adjustment mechanism, and the pickup device includes an X-axis adjustment mechanism, a Y-axis adjustment mechanism, and It has a function that can be moved in three directions orthogonal to each other by the Z-axis adjusting mechanism, and the suction hole is px in a direction corresponding to the first direction. It is formed by an arrangement pitch, and characterized in that it is formed by the arrangement pitch of py in a direction corresponding to the second direction.

  According to this, the suction holes formed in the electronic element pickup unit are formed with a px arrangement pitch in a direction corresponding to the first direction, and a py arrangement pitch in a direction corresponding to the second direction. Therefore, the electronic device can be mounted by the electronic device selective transfer method applied to the present invention.

  In addition, the wiring forming method after transferring the electronic element forms the wiring passing through the electronic element that controls the plurality of pixels, while forming the wiring on the display substrate in a broken line shape. It is formed by screen printing using a screen mask in which a predetermined pattern corresponding to the wiring of the display connected to the screen is formed. Here, the screen mask is preferably a metal mask using a thin metal foil.

  According to this, an electronic element that controls a plurality of pixels is assumed, but the electronic element is positioned between a data line, a gate line, and a pixel line, and the data line is vertically and horizontally centered on the electronic element. Wiring is required. For this reason, wiring that passes through the inside of the electronic element is formed, and the electronic element is transferred by the selective transfer method of the electronic element described above, and then the wiring that passes through the inside of the electronic element that controls a plurality of pixels. When forming data lines and other wiring on the display substrate connected to the data line, the data lines and the like are broken, so a screen mask with a predetermined pattern corresponding to the data lines and the like is used. As a result, a pattern wiring connected to the electronic element can be formed by a method of printing and applying a wiring material directly on the display substrate. In this regard, the conventional wiring method is expensive and complicated, such as depositing a thin film of a wiring material on the entire surface of the display substrate, transferring the pattern by photolithography, etching the wiring material thin film, removing the resist film, and the like. It was a manufacturing process. Further, the screen mask as described above could not be used, and screen printing could not be performed.

  In the display substrate, pixels are arranged in i rows and j columns in a display substrate in which electronic elements that control the pixels and wirings that connect the pixels are formed, and the electronic elements are formed by a single integrated circuit. An electronic element that controls a plurality of pixels, is arranged in the approximate center of the i rows and j columns, and is connected to the pixels via wiring using a common region. . In this display substrate, the electronic element is transferred by the electronic element selective transfer method.

  According to this, the electronic element is an electronic element that controls a plurality of pixels (or a light emitting layer and a back electrode) with a single integrated circuit, and is arranged in the approximate center of the i rows and j columns. Since they are connected via the wiring, the number of wirings is reduced (saving of wiring). Since the electronic element is arranged at the center of i row and j column, if i × j pixels are pixel blocks, each pixel 3 included in the pixel block is controlled by one electronic element. Wiring can be performed with the same wiring length from this position to the pixel 3 at the symmetrical position. In the optical display device D2 of the present invention, since the size of the electronic element 9 can be increased, the electronic element is arranged almost at the center of the pixel (light emitting layer) of i rows and j columns, and a plurality of electronic elements are formed by one electronic element. This is also suitable for controlling the pixel (light emitting layer).

  In the display substrate, i × j is a multiple of 3 in the i row and j column, and the electronic element is a set of three pixels of three colors, and a plurality of sets are controlled by one integrated circuit. It is characterized by. According to this, since the three pixels 3 composed of combinations of the three primary colors (RGB) can be controlled by one electronic element, the color development and the contrast are improved. Specifically, 2 rows and 6 columns, 6 rows and 2 columns, 2 columns and 12 rows, 4 columns and 12 rows, and the like are conceivable.

  In the display substrate, the electronic device is a single integrated circuit that controls 3 colors × 4 pixels arranged in 2 rows and 6 columns, and the electronic device is arranged in the center of 2 rows and 6 columns. It is characterized by that. According to this, since three pixels composed of combinations of the three primary colors (RGB) are controlled by one electronic element, color development and contrast are good. Here, an electronic element that simply controls three colors × four pixels in i rows and j columns may be used. Specifically, 2 columns 12 rows, 4 columns 12 rows, and the like are conceivable. Preferably, the electronic device is a single integrated circuit that controls 3 colors × 4 pixels arranged in 2 rows and 6 columns, and it is desirable that the electronic device is arranged in the center of 2 rows and 6 columns. .

  In the display substrate, the electronic element is transferred onto the display substrate, a step of fixing an electronic element substrate on which a plurality of integrated circuits for controlling a plurality of pixels are formed on a holding substrate, and the electronic element A manufacturing method comprising a step of fixing an electronic element obtained by cutting a substrate for each integrated circuit to a pickup substrate, and a step of selectively holding the electronic element on the pickup substrate by suction and transferring it to a display substrate Thus, the image is transferred onto the display substrate. Specifically, it is desirable that the electronic element is transferred and manufactured by the electronic element selective transfer method.

Embodiments of the present invention will be described below with reference to the drawings.
(Display substrate manufacturing method)
(1. Optical display device structure)
In the present embodiment, the selective transfer method for electronic elements is applied to the optical display device of the present invention. The optical display device is, for example, an optical display device D2 manufactured by bonding the block A on the transparent substrate 1 side and the block B on the counter substrate 15 side, as shown in the second embodiment. . On the counter substrate 15 which is a display substrate made of a plastic substrate, the electronic elements 9 in which the electronic elements 9 are formed in a matrix through the resin film 101 are those in which a plurality of thin film transistors (TFTs) are formed. By controlling the back electrode 4 on the front surface of the light emitting layer (pixel) 3 formed on the transparent substrate 1 side, on / off, light and shade of each light emitting layer (pixel) 3 is controlled.

(2. Electronic device selective transfer method)
The optical display device D2 having the above configuration is manufactured by the manufacturing method shown in FIG. The outline thereof is a process R1 for forming an integrated circuit 30 for controlling a plurality of pixels on the electronic element substrate 20 and fixing the integrated circuit 30 to the holding substrate 70, a process R2 for polishing the electronic element substrate 20, and an electronic element substrate 20. Is transferred to the pick-up substrate 90, R4 is cut into electronic elements 9, R5 is transferred to the counter substrate 9 as a display substrate by the pick-up device 51, and R6 is formed. Step R7 for bonding the transparent substrate 1 and the counter substrate 15 to each other.

  First, in step R1, an integrated circuit 30 that controls a plurality of pixels is formed on a crystalline silicon substrate or a polycrystalline silicon substrate (hereinafter referred to as a silicon substrate) 20 as the electronic element substrate 20. The integrated circuit 30 is formed on the silicon substrate 20 by a known semiconductor manufacturing technique. An example of the integrated circuit 30 is shown in FIG. In the integrated circuit 30 of FIG. 16, twelve thin-film transistor electronic devices 30a for pixel control are formed. That is, one integrated circuit 30 can control three colors (three colors of RGB) × 4 pixels. In addition, an electrode pad 30c for connecting signal lines such as the current holding circuit 30b and the pixel line 107 of each pixel is also formed. After the integrated circuit 30 is formed, as shown in FIG. 17, a silicon nitride film or a silicon oxide film 30d is deposited on a portion other than the electrode pad 30c to protect the integrated circuit 30. Here, in order to maintain the linearity of the wiring with the pixels away from the electronic element 9 in the column direction, the wiring of the column from the electronic element 9 is linearly provided (the electronic element and each pixel are simply arranged in a straight line). Are securely connected) (see FIG. 52). The length of 12 pixels of 3 colors × 4 pixels can be increased as the distance from the electronic element 9 arranged at the position where the wiring intersects (see FIG. 52). As another example of the pixel array, i × j is a multiple of 3 in the i row and j column, and the electronic element 9 includes a plurality of three pixels of three colors in one integrated circuit 30. 48. As shown in FIG. 48, 8 sets are controlled by one integrated circuit 30 with 2 columns and 12 rows as shown in FIG. 48 (24 pixels that are integer multiples of 3 are controlled as 3 pixels of 3 colors) 49, as shown in FIG. 49, it is conceivable to control 8 sets with 4 columns and 6 rows by one integrated circuit 30, and the electronic element 9 arranged at the center is formed by one integrated circuit 30. The electronic element 9 controls a plurality of pixels, and may be connected to each of the pixels via wiring using a common region. Thus, the pixel arrangement can be applied to a pixel arrangement pattern of i rows and j columns. According to this, the electronic element 9 is an electronic element that controls a plurality of pixels (or light emitting layer, back electrode) 3 with a single integrated circuit 30, and is arranged substantially at the center of the i rows and j columns. Since the pixel is connected via the wiring, the number of wirings is reduced (saving of wiring). Here, the number of wirings refers to the number of wiring groups (a set of data lines 109 or a set of pixel lines and gate lines 108 in this embodiment) including a bundle of wirings arranged in the row direction or the column direction. Say.

  As shown in FIG. 18, a large number of integrated circuits 30 as shown in FIG. 16 are formed on the silicon substrate 20 at regular intervals. The regular intervals (pitch) 5 and 6 correspond to the pitches 105 and 106 on the counter substrate 15 which is a display substrate, as will be described below. When one integrated circuit 30 controls three colors × 4 pixels, the electronic elements 9 on the counter substrate 15 serving as a display substrate have a pitch 105 in the first direction X as shown in FIG. The second direction Y is mounted at a pitch 106. The pitches 50 and 60 of the integrated circuits 30 formed on the silicon substrate 20 are based on the intervals 105 and 106 of the electronic elements 9 on the counter substrate 15 as a display substrate, as shown in FIG. Is filled with natural number m and n electronic elements 9. That is, when the pitch 105 in the first direction X in the counter substrate 15 that is the display substrate is px, and the pitch 106 in the second direction Y is also py, the pitch in the silicon substrate 20 in the first direction X is The pitch 50 is px / m, and the pitch 60 in the second direction Y is py / n. Then, as shown in FIG. 21, the surface of the silicon substrate 20, that is, the surface 20 a on which the integrated circuit 30 is formed is fixed to the holding substrate 70 with the first adhesive tape 80.

  Next, in step R2, the back surface of the silicon substrate 20, that is, the surface 20b on which the integrated circuit 30 is not formed is mechanically polished to reduce the thickness of the silicon substrate 20 to about 20 to 100 μm. As the first pressure-sensitive adhesive tape 80, a heat-release tape whose adhesive strength is reduced by predetermined heating can be used.

  Next, in step R <b> 3, the silicon substrate 20 is transferred to the pickup substrate 90. Specifically, as shown in FIG. 22, the back surface 20 b of the silicon substrate 20 and the pickup substrate 90 are bonded with the second adhesive tape 81, and the first adhesive tape 80 is heated through the holding substrate 70. Then, the first adhesive tape 80 and the holding substrate 70 are peeled off. In this way, the silicon substrate 20 is transferred from the holding substrate 70 to the pickup substrate 90. At this time, as shown in FIG. 23, the surface 20a on which the integrated circuit 30 is formed is the front surface side. Here, if each adhesive tape 80 and 81 is selected so that the thermal peeling temperature of the first adhesive tape 80 is lower than the thermal peeling temperature of the second adhesive tape 81, the first adhesive tape Heating to 80 is conducted to the second adhesive tape 81 through the silicon substrate 20, thereby preventing the adhesive force between the pickup substrate 90 and the silicon substrate 20 from being lowered and causing problems such as misalignment. .

  Further, the adhesive means of the adhesive tapes 80 and 81, that is, means for changing the adhesive force may be different. For example, when the first adhesive tape 80 is weakened in adhesive strength by ultraviolet irradiation and the second adhesive tape 81 is a heat release tape, the first adhesive tape 80 is exposed to ultraviolet rays for peeling the first adhesive tape 80. The adhesive strength of the second adhesive tape 81 is prevented from being reduced.

  Thereafter, in step R4, the silicon substrate 20 is cut into a chip shape for each integrated circuit 30, and the electronic element 9 is formed. The cutting method can be performed by etching, sandblasting, laser processing, dicing, or the like. From the standpoint of production efficiency, sand blasting, in which powder such as alumina is jetted from a nozzle at a high pressure and high speed, is most suitable. Laser machining that moves and cuts is suitable. Processing can also be performed by so-called dry etching using plasma, but since the processing speed is slower than other methods, the production efficiency is low. Further, in wet etching using a chemical solution, the processing accuracy of the electronic element 9 is inferior due to the chemical solution flowing around, or in the dicing process in which mechanical cutting is performed, the electronic device 9 is blown out by a dicing blade, resulting in a high yield. It is disadvantageous in terms. Therefore, the selection of the cutting method is important, and when the silicon substrate 20 having a thickness of about 20 to 100 μm is cut as in this embodiment, sandblasting or laser processing is suitable. In the present embodiment, an example by sandblasting will be described.

  24 and 25 show a cutting process by sandblasting. After the above-described thinning of the silicon substrate 20 by mechanical polishing and transfer to the pickup substrate 90, alignment and patterning of the electronic elements 9 are performed so that the integrated circuit 30 formed on the silicon substrate 20 can be cut. . Patterning is performed by a photolithography method or the like. FIG. 24 shows a state after patterning by photolithography. Next, as shown in FIG. 25, sand blasting is performed using the photoresist 110 formed by patterning as a mask. After cutting into individual electronic elements 9 by sandblasting, the photoresist 110 is peeled off. FIG. 26 shows a state after the photoresist 110 is removed.

  In the stage shown in FIG. 26, the electronic device 9 is placed on the pickup substrate 90 so that the pitch 5 in the first direction X is px / m and the pitch 6 in the second direction Y is py / n. It is in an arranged state. In the next step R5, the pickup substrate 90 is heated at a low temperature to slightly reduce the adhesive force of the second adhesive tape 81, and only the predetermined electronic element 9 is picked up from the arranged electronic elements 9. The electronic element 9 is arranged on the counter substrate 15 which is a display substrate. At this time, the pickup substrate 90 may be continuously heated until the pickup process is completed, but only the vicinity of the electronic element 9 to be picked up may be heated at the time of pickup. By doing in this way, heating time and calorie | heat amount can be decreased. In addition, when the second adhesive tape 81 whose adhesive strength is reduced by ultraviolet irradiation is used and the one that transmits ultraviolet rays is used for the pickup substrate 90, an ultraviolet beam is applied only to the vicinity of the electronic element 9 to be picked up. By irradiating for a short time, it is possible to reduce the time and heat amount (ultraviolet ray irradiation amount) required for reducing the adhesive strength of the second adhesive tape 81.

  FIG. 27 shows the vacuum chuck 52 of the pickup device 51 that picks up in step R5. A fluororesin is applied to the suction surface of the vacuum chuck 52. This fluororesin has a role as a release agent from a transparent thermoplastic resin film such as a transparent thermoplastic resin film 101 described later. The vacuum suction holes 53 for chucking (sucking) the electronic elements 9 are, in the first direction X, a natural number K rows at the same arrangement pitch 55 (that is, px) as the electronic elements 9 on the counter substrate 15 that is the display substrate. Similarly, natural number L rows are formed in the second direction Y at the same arrangement pitch 50, 60 (ie, py). Therefore, the vacuum chuck 52 picks up a maximum of K × L electronic elements 9 that satisfy the pitch 105 in the first direction X and the pitch 106 in the second direction Y on the counter substrate 15 as a display substrate at a time. Then, it can be transferred to the counter substrate 15 which is a display substrate.

  In FIG. 28, the hatched portions are electrons regularly arranged at a pitch of 50 (ie, px / m) in the first direction X and at a pitch of 60 (ie, py / n) in the second direction Y. An example of the electronic element 9 picked up by the vacuum chuck 52 in the element 9 is shown. That is, since the first direction X is selected every m natural numbers (every m-1) and the second direction is selected every n natural numbers (every n-1). Thus, the electronic elements 9 at the hatched portions are selectively picked up. Then, at the next pickup, for example, if the vacuum chuck 52 is shifted to the first direction X (rightward in FIG. 28) by the width px / m on the pickup substrate 90, the pickup is already performed. The electronic element 9 located on the right side of the electronic element 9 (the hatched line in FIG. 28) can be selectively picked up as in the previous pick-up. Such a selective pickup operation can be repeated up to m × n times. FIG. 29 shows a state where the electronic element 9 is picked up using the vacuum chuck 52. In this way, the electronic device 9 is transferred onto the entire surface of the counter substrate 15 as a display substrate by performing selective transfer of the electronic device 9 once or a plurality of times.

  Next, a method for fixing the picked-up electronic element 9 to the counter substrate 15 which is a display substrate will be described. As shown in FIG. 30, a transparent thermoplastic resin film 101 is laminated on the surface of the counter substrate 15 which is a display substrate. Instead of the transparent thermoplastic resin film 101, a transparent thermoplastic resin may be applied to form a film, or the counter substrate 15 which is a display substrate made of a transparent thermoplastic resin may be used. As shown in FIG. 31, the counter substrate 15 as such a display substrate is heated by a heater or the like in advance before transfer of the electronic element 9, and on the transparent thermoplastic resin film 101 that can be appropriately plastically deformed. Then, the picked-up electronic element 9 is transferred so as to be embedded.

  Alternatively, the picked-up electronic element 9 may be placed on the transparent thermoplastic resin film 101 and then transferred so as to be embedded by pressing. At this time, since the transparent thermoplastic resin film 101 is not sufficiently heated, the adhesion with the electronic element 9 is weak, and the electronic element 9 adsorbed by the vacuum chuck 52 comes into contact with the transparent thermoplastic resin film 101 to form a vacuum. At the moment when the electronic element 9 leaves the suction hole 53, the electronic element 9 may be slightly displaced. Therefore, when the electronic element 9 leaves the vacuum suction hole 53, pressurized air is applied from the vacuum suction hole 53, and the electronic element 9 is placed on the transparent thermoplastic resin film 101 with the pressure generated by the compressed air, whereby the electronic element 9 And the transparent thermoplastic resin film 101 are in close contact with each other, so that the electronic element 9 can be surely separated from the vacuum suction hole 53 and misalignment on the transparent thermoplastic resin film 101 can be prevented.

  As a pressing method, after the electronic element 9 is arranged or at the time of arrangement, the transparent thermoplastic resin film 101 may be heated and plastically deformed and then pressed by a pressing device or the like (not shown), or the pressing device or the like. May be heated and pressed. In addition, at the time of pressing (timing), after all the electronic elements 9 have been arranged, the counter substrate 15 that is a display substrate may be pressed together, or an arbitrary quantity (for example, a display) The electronic device 9 may be pressed after the placement of the electronic elements 9 in a predetermined area on the counter substrate 15 as a substrate. At this time, it is desirable that the periphery of the vacuum suction hole 53 of the vacuum chuck 52 is left slightly, and the remaining portion is scraped off by a thickness equal to or greater than the thickness of the electronic element 9. For example, when the electronic element 9 is attracted to the vacuum suction hole 53, a region hidden around the electronic element 9 is left in the peripheral portion of the suction hole 53, and the remaining part is scraped off as described above. As a result, it is possible to prevent the already disposed electronic element 9 from being displaced due to interference with the vacuum chuck 52 (particularly the edge portion). Further, at the time of pick-up, positional displacement caused by interference of the vacuum chuck 52 with the electronic elements 9 that are not picked up on the pick-up substrate 90 (that is, the non-placed electronic elements 9), or the electronic elements 9 are damaged. Is prevented.

  Further, as another method for embedding the electronic element 9, it may be locally heated by laser light irradiation or the like. In this case, since the place where the electronic element 9 is transferred is locally plasticized, the transparent thermoplastic resin film 101 in the vicinity of the electronic element 9 that has already been transferred is deformed when a force is applied so as to be embedded. To prevent misalignment.

  Further, as described above, since the surface (adsorption surface) for adsorbing the electronic elements 9 of the vacuum chuck 52 is coated with fluororesin, the adsorption surface of the vacuum chuck 52 is transparent with the transparent thermoplastic resin film 101 or the like. No thermoplastic resin film is attached. Accordingly, in the present invention, since the electronic element 9 can be accurately and surely disposed on the transparent thermoplastic resin film 101, the concave portion for fitting the electronic element 9 into the transparent thermoplastic resin film 101 as in the past. The step of forming the film in advance is not necessary. FIG. 32 shows a state in which the electronic element 9 is embedded in the transparent thermoplastic resin film 101.

  Further, as shown in FIG. 32, when the electronic element 9 is transferred to be embedded in the transparent thermoplastic resin film 101, a concave deformation 103 of the transparent thermoplastic resin film 101 may be generated particularly in the periphery of the electronic element 9. . In order to flatten the concave deformation 103 and to securely fix the electronic element 9, a transparent ultraviolet curable resin film 104 is applied to the surface of the counter substrate 15 as a display substrate to which the electronic element 9 is transferred as shown in FIG. Then, as shown in FIG. 34, ultraviolet irradiation is performed from the opposite surface to which the electronic element 9 is selectively transferred. Since the counter substrate 15 and the transparent thermoplastic resin film 101 which are display substrates transmit ultraviolet rays, the transparent ultraviolet curable resin film 104 other than the surface of the electronic element 9 which does not transmit ultraviolet rays is cured. Thereafter, the uncured transparent ultraviolet curable resin film 104 on the electronic element 9 is removed. FIG. 35 shows the counter substrate 15 which is a display substrate after the removal process. Further, the transparent thermoplastic resin film 101 is made of an organic material by selecting a material that can withstand the treatment of an organic solvent used for subsequent assembly to the optical display device D2 as the transparent ultraviolet curable resin film 104. It can be protected from the solvent.

(Wiring formation method)
After the electronic element 9 is fixed on the counter substrate 15 as a display substrate by the method described above, in step R6, as shown in FIG. 36, wiring (pixel line) between the electronic element 9 and the back electrode 4 is provided. ) 107, the wiring 12 such as the gate line 108 and the data line 109, and the insulating film 13 are formed. Next, as shown in FIG. 37, after the contact hole 14 is formed, the conductive material is filled and the ball solder 16 is formed at the tip.

  As shown in FIG. 39, the wiring arranged on the counter substrate 15 can be freely wired, for example, in a radial pattern around the electronic element 9 so as to cross the light emitting layer 3 formed on the transparent substrate 1. Is possible. The optical display device D2 of the present invention is a bottom emission type organic EL display, and emitted light is emitted from the transparent substrate 1 on the side opposite to the counter substrate 15. For this reason, even if the wiring is formed so as to cross the light emitting layer 3, the aperture ratio is not affected at all, and the wiring can be formed with a high degree of freedom. It is also possible to increase the area of the electrode (the broken line portion in FIG. 39) of each pixel (light emitting layer) 3.

  In this embodiment, the electronic elements 9 for controlling a plurality of pixels, the gate lines 108, the data lines 109, the pixel lines 107, and the like are patterned by a printing application method by screen printing using a screen mask MM. In the electronic element 9 that controls a plurality of pixels, as shown in FIG. 47A, wirings D9, P7, and G8 that pass through the inside are formed in a multilayer structure (that is, the vertical data line 109). Can be kept straight.). That is, wirings D9, P7, and G8 to be connected to the wiring such as the gate line 108, the data line 109, and the pixel line 107 are formed in advance. On the other hand, as the screen mask MM, there are a metal mask and a mesh mask, either of which may be used, but it is preferable to use the metal mask MM for the reason described later. An example of the screen mask MM using the metal mask MM is shown in FIG. 47B. A predetermined pattern (a broken line-like pattern corresponding to the pixel line 107, the gate line 108, and the data line 109) is formed on the metal foil screen mask MM. Holes MD9, MP7, and MG8 of a pattern in which slits are formed vertically and horizontally are formed. In the screen printing of this embodiment, as the metal mask MM, a hole is made in a pattern portion (pattern) of a metal foil having a thickness of about 20 μm, and ink (wiring material) is applied from that portion. Here, the symbol MD9 is a pattern corresponding to the data line 109 of the counter substrate 15 which is the flat display of FIG. 47C, the symbol MP7 is a pattern corresponding to the pixel line 107, and the symbol MG8 is also a gate line. 108 is a pattern corresponding to 108. Note that the electronic element 9 that controls a plurality of pixels is positioned at the center position MS of the predetermined vertical and horizontal patterns MD9, MP7, and MG8. In order for the electronic element 9 to control the entire image such as the gate line 108 and the data line 109, the inside of the electronic element 9 that controls a plurality of pixels in which a part of wirings arranged on the entire screen is arranged on the entire screen is arranged. As a result, when the wiring such as the data lines 108 and the gate lines 109 is patterned using the screen mask MM, the data lines 108 and the gate lines 109 are divided into minute areas like a predetermined pattern in the vertical and horizontal directions of the screen mask MM. The slit holes MD9, MP7, and MG8 can be used, and if the screen mask MM formed with these is used, wiring such as the gate lines 108 can be formed on the counter substrate 15 as a display substrate at a time. In this regard, the wiring in the conventional organic EL display is such that one TFT is interposed between the wirings extending vertically and horizontally, and the signal lines (data lines and gate lines) for sending signals to each pixel are substantially straight and horizontal. As a result, the metal mask itself could not be processed. In addition, the wiring method is an expensive and complicated manufacturing such as depositing a wiring material on the entire surface of the display substrate, transferring the pattern by photolithography, etching the wiring material thin film, removing the resist film, etc. It was a process. In the present embodiment, all the wirings on the substrate have a broken line pattern (intermittent pattern) separated by the electronic element 9, so that all the wirings can be formed by the above method. However, the main part (straight line part) of the wiring such as the gate line 108 laid vertically and horizontally is formed by the same forming method as in the prior art, and only the connecting part centering on the electronic element 9 described above is used in this embodiment. The wiring connection method may be used.

  In the present embodiment, since the electronic element 9 is placed in the center of the broken line between the data lines 108 and the gate lines 109, the efficient wiring pattern collectively displayed by screen printing using the metal mask MM is displayed. Since the wiring material can be directly printed and formed on the counter substrate 15 which is a substrate, the production efficiency is remarkably improved. However, the reason why the metal mask MM is used is that the method using a screen mesh is limited to printing a thin line with a width of 10 to 20 μm, and the LCD signal line is usually about 10 μm, so that it is difficult to use at present. It depends. On the other hand, the method using the screen-printed metal mask MM has the advantage that a fine line of 10 μm or less can be directly printed, and wiring can be implemented at a lower cost than in the prior art.

  Next, in step R7, the block B on the counter substrate 15 side to which the electronic element 9 has been transferred in the above step and the block A on the transparent substrate 1 side that have been separately manufactured are bonded together to form an optical display device D2. Is completed.

(Method for Manufacturing Display Substrate of Second Embodiment)
In the present embodiment, as shown in the flowchart of FIG. 40, a transfer process R11 to the pickup substrate 90 is performed after the cutting process R10 of the electronic element 9. In step R2, after mechanical polishing of the silicon substrate 20 shown in FIG. 21, as step R10, alignment and patterning of the electronic element 9 are performed so that the integrated circuit 30 formed on the silicon substrate 20 can be cut. . At this time, since the integrated circuit 30 is not on the surface side of the silicon substrate 20 but on the side in contact with the holding substrate 70, it is not possible to perform alignment while confirming the position of the integrated circuit 30 directly from above. Therefore, alignment is performed by providing an alignment mark indicating the position of the integrated circuit 30 on the back surface 20b of the silicon substrate 20 or providing a through hole for alignment in the silicon substrate 20 and the holding substrate 70. Can do. If the holding substrate 70 and the first adhesive tape 80 are transparent, the position of the integrated circuit 30 can be confirmed from the back surface side.

  Patterning is performed by a photolithography method or the like. The state after patterning is shown in FIG. Next, as shown in FIG. 42, sandblasting is performed using the photoresist 110 formed by patterning as a mask. After cutting into individual electronic elements 9 by sandblasting, the photoresist 110 is peeled off. FIG. 43 shows a state after the photoresist 110 is removed.

  Next, as Step R11, as shown in FIG. 44, the back surface of the electronic element 9 and the pickup substrate 90 are bonded with the second adhesive tape 81, and the first adhesive tape 80 is heated through the holding substrate 70. Then, the first adhesive tape 80 and the holding substrate 70 are peeled off. Here, since the adhesive force is reduced while the first adhesive tape 80 is heated, there is a possibility that the electronic elements 9 are scattered by peeling and the regular arrangement is disturbed. Therefore, it is necessary to consider that the electronic element 9 is not scattered or misaligned by heating the first adhesive tape 80 while the electronic element 9 is slightly pressed and fixed at the time of peeling by heating. . In this way, the electronic element 9 is transferred from the holding substrate 70 to the pickup substrate 90. At this time, as shown in FIG. 45, the surface on which the integrated circuit 30 is formed is the front surface side.

  Here, similarly to the above, it is possible to select the respective adhesive tapes 80 and 81 so that the thermal peeling temperature of the first adhesive tape 80 is lower than the thermal peeling temperature of the second adhesive tape 81. From the viewpoint of preventing misalignment. Further, the adhesive forces of the adhesive tapes 80 and 81 may be different. As the first adhesive tape 80, a tape having an adhesive force sufficient to withstand the force applied to the electronic element 9 and the holding substrate 70 in the mechanical polishing of the silicon substrate 20 and the dividing process into the electronic element 9 is selected. When the adhesive tape 81 having an adhesive force that is easy to pick up is selected, the positional deviation is more reliably prevented, and the subsequent pick-up process is performed smoothly. Further, as in the first embodiment, the adhesive force only in the vicinity of the electronic element 9 to be picked up may be reduced.

(Example)
Next, a case of manufacturing an organic EL display having a diagonal size of 50 inches, a resolution of SXGA (1280 × 3 colors × 1024), and an aperture ratio of 80% is compared with Patent Document 1 (Japanese Patent Laid-Open No. 11-142878). explain. In Patent Document 1, a pixel control element is formed on a silicon substrate in association with an arrangement pitch on a flat display substrate, and a concave portion into which the pixel control element (microelectronic device) is fitted is selectively transferred to the display substrate. After forming and aligning the pixel control element group of the silicon substrate on the display substrate, the adhesive force of the adhesive between the pixel control element to be transferred and another substrate is selectively weakened by irradiating with ultraviolet rays. A method for fitting a pixel control element into a recess of a substrate is disclosed. In addition, a method of forming an adhesive layer in the recess and fixing the pixel control element is also disclosed.

(1) Comparison of element shapes When controlling 12 pixels with one element in the method of the present case, the size of the Si chip is about 200 μm. On the other hand, in the conventional document 1, when one pixel is controlled by one element, the size of the Si chip is about 60 μm.

(2) Comparison of element pitch In this method, the element pitch is about 1.7 mm in width and 1.22 mm in length. In Patent Document 1, the element pitch is about 0.3 mm in width and about 0.6 mm in length.

  Based on the above assumptions, the method of the present case and Patent Document 1 are compared. As for (1) “productivity in element processing”, the electronic element that controls a plurality of pixels in the method of the present invention is more Since it is much larger than the element in the method, the machining allowance can be reduced, the material consumption can be reduced, and the number of processing steps can be greatly reduced. (2) In order to transfer the element to the substrate, in this method, in order to transfer the electronic element to the display substrate, a vacuum chuck in which vacuum holes are processed from the elements arranged in a regular array to the arrangement pitch of the elements is used. The elements are selectively picked up and transferred onto the substrate. The vacuum holes are arranged with a diameter of about 100 μm and a pitch of 1.7 mm and a length of 1.2 mm. When the size of the Si chip substrate to be transferred is about 8 inches wafer, it is possible to pick up about 9000 Si chips at a time. On the other hand, if it is based on the method of patent document 1, it is necessary to process the vacuum hole of about (phi) 40 micrometer by 0.3 mm pitch. Further, if a Si chip is picked up from an 8-inch wafer substrate, it is necessary to process about 110,000 vacuum holes. With the current processing technology, in the drilling of deep holes that can be used as a vacuum chuck, φ100 μm is possible, and it is difficult to drill holes as small as φ40 μm, and it is necessary to process a very large number of them. Cannot be realized in reality. (3) Regarding “inspection and repair of elements”, since the method of the present invention has a small number of elements to be arranged, the inspection and repair of elements are also facilitated. Further, even if the method of “pickup & embedding” is performed in the method of Patent Document 1 (regular arrangement of elements), as described above, a vacuum chuck that picks up a small element that controls one pixel with one element. It becomes difficult to process itself.

  As described above, in the electronic device transfer method according to the first and second embodiments, the case where the present invention is applied to the manufacture of an organic EL display has been described. However, the present invention is not limited thereto, and the inorganic EL display is not limited thereto. The present invention can be widely applied to the manufacture of optical display devices (displays) such as electronic paper and electronic paper. In the above-described embodiment, the case where the display substrate to which the electronic element 9 is transferred is the counter substrate 15 has been described as an example.

(Electronic device mounting equipment)
Next, an apparatus for mounting an electronic element by the method described in the first and second embodiments will be described. In FIG. 46, the mounting apparatus 300 of the electronic element 9 by this Embodiment is shown. This mounting apparatus 300 has a pickup function and an arrangement function at the time of selective transfer of the electronic element 9 to the counter substrate 15 which is a display substrate, and performs the process R5 in FIG. The arrangement function includes an electronic element stage 301 that holds the electronic elements 9 and a substrate stage 302 that holds the counter substrate 15 that is a display substrate. The electronic element stage 301 holds the electronic element 9 by means such as an electrostatic chuck or a low adhesive tape, and includes a peeling mechanism 303 such as a heater or an ultraviolet irradiation device. The substrate stage 302 holds the counter substrate 15 as a display substrate by a vacuum chuck, an electrostatic chuck, a mechanical chuck, or the like, and includes a heating mechanism 309 using a heater or the like. When a mechanical chuck is used, the end of the counter substrate 15 that is a display substrate is held. Each of the electronic element stage 301 and the substrate stage 302 has a rotation angle adjustment mechanism, and the rotation angle is adjusted and controlled by a control device 308 such as a computer. The pickup function includes a pickup device 51 that selectively attracts the electronic elements 9, an alignment camera 304 associated with the pickup device 51, an X-axis adjustment mechanism 305, a Y-axis adjustment mechanism 306, and a Z-axis adjustment mechanism 307. Each of the axis adjusting mechanisms 305, 306, and 307 aligns the pickup device 51 at an optimum place for each axis, and the position is controlled by the control device 308. The video data of the alignment camera 304 is sent to the control device 308, and the video is displayed on a monitor (not shown) of the control device 308.

  Hereinafter, mounting of the electronic element 9 using the mounting apparatus 300 will be described. After the pickup substrate 90 holding the electronic elements 9 is placed on the electronic element stage 301 and the counter substrate 15, which is a display substrate, is placed on the substrate stage 302, each parallel adjustment is performed. In the parallel adjustment, each stage 301 is set such that the first direction X on the pickup substrate 90, the first direction X on the counter substrate 15 that is the display substrate, and the movable direction of the X-axis adjusting mechanism 305 are parallel to each other. , 302 is adjusted. Parallel adjustment may be performed so that the second direction Y, Y on the pickup substrate 90 and the counter substrate 15 that is a display substrate is parallel to the movable direction of the Y-axis adjusting mechanism 306. As a reference for confirming the parallelism, the alignment mark M1 is easily set in advance on the silicon substrate 20 or the pickup substrate 90 on which the electronic elements 9 are formed and the counter substrate 15 which is a display substrate. Can do. Alternatively, the end of the electronic element 9 and the end of the counter substrate 15 that is a display substrate may be used as a reference. The parallelism is confirmed by the alignment mark M2 of the silicon substrate 20 or the pickup substrate 90 or the electronic element 9 and the display substrate while checking the monitor of the control device 308 using the alignment camera 304. By observing the end portion of the counter substrate 15, the electronic element stage 301 is rotated so that the first direction X of the pickup substrate 90 is parallel to the movable direction of the X-axis adjusting mechanism 305. Similarly, the substrate stage 302 is rotated so that the first direction X of the counter substrate 15 that is the display substrate is parallel to the movable direction of the X-axis adjusting mechanism 305. At this time, automatic parallel adjustment may be performed by performing image processing on a signal from the alignment camera 304 in the control device 308.

  After the parallel adjustment, the position information of the alignment mark M2 of the silicon substrate 20 or the pickup substrate 90 and the position information of the alignment mark M1 of the counter substrate 15 that is the display substrate are stored in the control device 308. These pieces of position information include position information of the X-axis adjustment mechanism 305, the Y-axis adjustment mechanism 306, and the Z-axis adjustment mechanism 307, respectively. Instead of the respective alignment marks M1 and M2, for example, the position information of the electronic device 9 is obtained by using the position of the lower left chip (reference chip) or the front left of the counter substrate 15 as the display substrate as the reference position. You may memorize | store in the control apparatus 308. FIG.

  After storing the position information, the electronic element 9 is picked up. Before the pickup, the heater of the peeling mechanism 303 and the ultraviolet irradiation device are driven in advance so that the second adhesive tape 81 of the pickup substrate 90 is in a low adhesive state. Further, the heater of the heating mechanism 309 is driven in advance so that the transparent thermoplastic resin film 101 of the counter substrate 15 that is the display substrate can be plastically deformed. As described in the first embodiment, the pickup device 51 is provided with the vacuum chuck 52, and has the same pitches 55 and 56 as the pitches 105 and 106 of the electronic elements 9 on the counter substrate 15 which is a display substrate. The vacuum suction hole 53 is provided, and the position information of the vacuum suction hole 53 is stored in the control device 308 in advance. Then, the control device 308 drives the X-axis adjustment mechanism 305, the Y-axis adjustment mechanism 306, and the Z-axis adjustment mechanism 307, moves the vacuum chuck 52 above the electronic element stage 301, and picks up the electronic element 9. It is preferable that the electronic element 9 to be picked up first is the electronic element 9 that is closest to the previous reference position, since the subsequent control is performed efficiently.

  As described above, depending on the types of the second adhesive tape 81 and the pick-up substrate 90, when the second adhesive tape 81 is reduced in adhesiveness, it is possible to use an energy beam such as an ultraviolet beam. At this time, an energy ray generator that generates a heat ray or an ultraviolet beam is used as the peeling mechanism 303, and this is set in a standby state before pickup. Then, at the time of picking up (or immediately before), only the vicinity of the electronic element 9 to be picked up is irradiated with energy rays, and the second pressure-sensitive adhesive tape 81 is partially made low adhesive. Therefore, it is not necessary to maintain the heating state (or the ultraviolet irradiation state) until the pickup process is completed, and the adhesive tape 81 in the vicinity of the electronic element 9 that is not picked up is not in a low adhesive state. Will not be disturbed.

  The vacuum chuck 52 picked up with the electronic element 9 is driven to the upper side of the counter substrate 15 which is the display substrate by driving the X-axis adjusting mechanism 305, the Y-axis adjusting mechanism 306 and the Z-axis adjusting mechanism 307, and is opposed to the display substrate. The electronic element 9 is mounted on the substrate 15. These electronic elements 9 are repeatedly picked up and mounted, and the electronic elements 9 are mounted on the entire surface of the counter substrate 15 that is a display substrate. Further, productivity can be improved by installing a plurality of electronic element stages 301 and pickup devices 51 and mounting several lots of electronic elements 9 in parallel.

  Further, since the transparent thermoplastic resin film 101 can be plastically deformed by the heating mechanism 309 in advance, when the electronic element 9 is mounted so as to press the vacuum chuck 52 against the transparent thermoplastic resin film 101, the electronic element 9 is transparently heated. It arrange | positions so that it may be embedded in the plastic resin film 101. FIG. After the electronic element 9 is placed on the counter substrate 15 (transparent thermoplastic resin film 101) as a display substrate without being heated in advance by the heating mechanism 309 or without providing the heating mechanism 309 on the substrate stage 302, from above. You may heat-press and mount so that it may embed in the transparent thermoplastic resin film 101. Moreover, you may make it heat the transparent thermoplastic resin film 101 locally by irradiation of a laser beam, etc. from the back side.

  When the transparent ultraviolet curable resin film 104 is used after the electronic element 9 is mounted, after applying the transparent ultraviolet curable resin film 104 to the surface of the counter substrate 15 that is the display substrate on which the electronic element 9 is arranged, another ultraviolet irradiation device ( The electronic element 9 is fixed by irradiating with ultraviolet rays from the back surface of the counter substrate 15 which is a display substrate. At this time, an ultraviolet irradiation device may be incorporated in the substrate stage 302.

  The mounting apparatus 300 picks up the electronic element 9 on the pickup substrate 90 and mounts it on the counter substrate 15 as a display substrate, except for the pickup and mounting step R5 in the first and second embodiments. This step can be performed using a known manufacturing apparatus (for example, a semiconductor manufacturing apparatus or a photolithography apparatus). That is, when an apparatus related to mounting of the electronic element 9 has already been introduced, only the mounting apparatus 300 in the present embodiment is newly introduced, and the electronic elements described in the first and second embodiments are introduced. The mounting method can be performed.

(Example)
An example in which the electronic element 9 is actually selectively transferred to the display substrate (counter substrate) 15 of the organic EL display using the mounting apparatus 300 will be described. The optical display device D2 of this embodiment has a diagonal size of 50 inches and a resolution of SXGA. On an 8-inch (200 mm diameter) silicon substrate 20, electronic elements 9 having a size of 200 μm in length × 150 μm in width, a pitch 5 in the first direction X of 0.215 mm, and a pitch 6 in the second direction Y of 0. When manufactured at 244 mm and a thickness of 0.06 mm, 370,000 electronic elements 9 are manufactured from one silicon substrate (element forming portion is 140 mm × 140 mm). When the optical display device D2 having a diagonal size of 50 inches (1107 mm × 623 mm) and a resolution of SXGA (1280 × 1024 × 3 colors) is manufactured, the size of one pixel (three colors) is 0.86 mm × 0.00 mm. 61 mm. That is, the distance between the electronic elements 9 on the counter substrate 15 that is a display substrate is 1.72 mm for the pitch 105 in the first direction X and 1.22 mm for the pitch 106 in the second direction Y. The number of electronic elements 9 required at that time is about 330,000. That is, the electronic element 9 for one counter substrate 15 which is a display substrate used for the 50-inch optical display device D2 can be manufactured with one silicon substrate 20.

  The vacuum chuck 52 for picking up the electronic device 9 manufactured in this way has vacuum suction holes 53 with a diameter of 100 μm, a pitch 55 in the first direction X of 1.72 mm, and a pitch 50 in the second direction Y. , 60 is 1.22 mm, and 80 (= K) columns are formed in the first direction X and 102 (= L) rows are formed in the second direction Y.

  By this vacuum chuck 52, the pitch 105 (= 1.72 mm) in the first direction X and the pitch 106 (= 1.22 mm) in the second direction Y of the counter substrate 15, which is a display substrate, from among the electronic elements 9. Then, K × L (= 80 × 102 = 8160) electronic elements 9 were picked up and transferred to the counter substrate 15 as a display substrate. This was repeated to transfer the electronic element 9 to the entire surface of the counter substrate 15 which is a display substrate. As a result, the electronic element 9 could be transferred to the entire surface of the counter substrate 15 as a display substrate by selective transfer of 40 times in total, 8 times in the first direction X and 5 times in the second direction Y.

(Comparison between the above embodiment and Patent Document 2)
Next, a comparison with the invention of Patent Document 2 (Japanese Patent Laid-Open No. 2002-244576) will be described. The invention of Patent Document 2 picks up and transfers the “element block 13” corresponding to the electronic element 9 of this embodiment one by one, whereas the selective transfer method of the above embodiment has a plurality of methods. These electronic elements are picked up and transferred at a predetermined pitch. That is, Patent Document 2 discloses that “peeling from the element formation substrate 11 is performed in units of element blocks 13 (paragraph number 0018)” and “after transfer, the interval between the element blocks 13 is increased. (Paragraph number 0023) ". Also, paragraph number 0030 and FIG. 8 describe the gripping means (the pickup device of the above embodiment) used in Patent Document 2. The gripping means describes the hollow portion 35 and the gas vent hole 34 (vacuum suction hole of the above embodiment) for sucking the element block 13 (the electronic device 9 of the above embodiment). There is one degassing hole 34, and there is one pixel block 13 that can be adsorbed and grasped by the grasping means (pickup device). That is, in Patent Document 2, pickup is performed for each element block 13 using a gripping means (pickup device) capable of attracting and gripping one element block 13 (electronic element in the above embodiment), and the display device It is transferred to the substrate 14 (display substrate) (FIG. 51A). For this reason, it is necessary to perform the pick-up and transfer for each element block 13 (electronic element in the above embodiment) as many times as the number thereof, and each time one element block 13 is picked up and transferred, the display device substrate 14 is used. It is necessary to align the top.

  On the other hand, in the above embodiment, “in the first direction of the electronic element substrate, px / in which the arrangement pitch px of the electronic elements in the first direction on the display substrate is divided by a natural number m. The arrangement pitch of m and the second direction orthogonal to the first direction are py / n arrangement pitches obtained by dividing the arrangement pitch py of the electronic elements in the second direction on the display substrate by the natural number n. A plurality of electronic elements are formed as described above, and in the pickup device, vacuum suction holes for chucking the electronic elements are formed at an arrangement pitch of px in a direction corresponding to the first direction, and the second direction Are formed at an arrangement pitch of py in the direction corresponding to the above, and only the electronic elements corresponding to the arrangement pitches px and py of the electronic elements on the display substrate are selectively attracted to the pickup device. As described in the above, the arrangement pitch of the electronic elements on the electronic element substrate (px / m, py / n) and the arrangement pitch of the vacuum suction holes of the pickup device (px , Py) is related to the array pitch (px, py) of the display substrate, so that a plurality of electronic elements are selected with the array pitch (px, py) on the display substrate by one pickup. The image is transferred to the display substrate while maintaining the arrangement pitch (FIG. 51 (b)). That is, since the first direction X is selected every m natural numbers (every m-1) and the second direction is selected every n natural numbers (every n-1). 28, the plurality of electronic elements 9 at the hatched portions are selectively picked up. Therefore, the number of pick-ups and transfers is small and the production efficiency is high as compared with the case of pick-up and transfer for each element block 13 (electronic element of the above embodiment) as in Patent Document 2.

  In addition, the display device substrate 14 (the counter substrate 15 which is the display substrate in the above embodiment) has a pickup as compared with Patent Document 2 that requires alignment for each element block 13 (the electronic element 9 in the above embodiment). Since the arrangement pitch (px, py) on the display substrate is obtained at the time, the plurality of electronic elements are aligned at a time. Regarding this effect, “therefore, the vacuum chuck 52 allows the electronic elements 9 that satisfy the pitch 105 in the first direction X and the pitch 106 in the second direction Y on the counter electrode 15 that is the display substrate to be maximized at a time. K × L pickups can be picked up and transferred to the counter substrate 15 as a display substrate. ”Or“ At the next pickup, for example, the vacuum chuck 52 is placed on the pickup substrate 90 for the first width px / m. If the position is shifted to the direction X (right direction in FIG. 28), the electronic element 9 located on the right side of the already picked up electronic element 9 (hatched in FIG. 28) It can be selectively picked up as in the previous pick-up. ” What accurately picks up while performing such alignment is a feature of the above embodiment.

  In this regard, Patent Document 2 describes in paragraph No. 0017 that “the distance between the thin film transistor elements 12 may be any distance that allows separation between elements”, and the pixel forming substrate 11 (the above embodiment). The arrangement pitch of the thin film transistor elements 12 in the electronic element substrate) is not considered at all. From this, it is understood that the arrangement pitch of the element blocks 13 (electronic elements) that are aggregates of the thin film transistor elements 12 is not taken into consideration at all.

  In Patent Document 2, as shown in FIG. 51A, the arrangement pitch of the pixel blocks 13 (electronic elements) is the same between the transfer source (electronic element substrate) and the transfer destination (display board). It is thought that it is attached. With such simple association, the pixel block 13 (electronic element) is formed in a state of being diffused on the electronic element substrate, and the number of electronic elements produced per area of the electronic element substrate is very small.

  On the other hand, the electronic device selective transfer method of the present embodiment is described as follows: “On the electronic device substrate, for the first direction, the arrangement pitch px of the electronic devices in the first direction on the display substrate is a natural number. An arrangement pitch of px / m divided by m, and a second direction orthogonal to the first direction, py /, which is obtained by dividing the arrangement pitch py of electronic elements in the second direction on the display substrate by a natural number n. In the substrate for electronic elements, the electronic element is obtained by dividing the arrangement pitch (px, py) of the display substrate by a natural number (m, n). It is formed with an arrangement pitch (px / m, py / n), and the electronic elements can be formed in a dense state on the electronic element substrate while associating the electronic element substrate with the display substrate. Are (Fig. 51 (b)). Thereby, compared with the said simple matching, the production efficiency of the electronic element per area of the board | substrate for electronic elements is remarkably high.

  In addition, as described above, the “element block 13” is considered to be a set of elements in which the four thin film transistor elements 12 each control the four pixels on the outer periphery thereof. Specifically, as shown in FIG. 50 (a), four thin film transistor elements 12 for controlling these four pixels are arranged so as to be densely arranged in the center of four square-shaped pixels. is there. The same applies to the cited document 2. That is, in the element block 13 of Patent Document 2 (corresponding to the electronic element in the above embodiment), a plurality of thin film transistor elements 12 that control one pixel are gathered, and a plurality of thin film transistor elements 12 controls a plurality of pixels. However, the electronic element 9 of the above embodiment is different in that a plurality of pixels are controlled by one integrated circuit.

  According to the electronic device selective transfer method of the above embodiment, the electronic device is arranged at an arrangement pitch obtained by dividing the arrangement pitch in the first direction and the second direction on the display substrate (transparent substrate or counter substrate) by a natural number. Since only the electronic elements corresponding to the arrangement pitch on the display substrate (transparent substrate or counter substrate) are selectively transferred, all the electronic elements can be easily transferred without waste. At this time, when the electronic device is separated after being transferred to the pickup substrate so that the integrated circuit surface is directed to the surface, it is possible to perform alignment while confirming the integrated circuit surface from the surface side. The cutting process becomes easy. On the other hand, if the integrated circuit surface is transferred to the pickup substrate so that the integrated circuit surface becomes the surface after being cut into electronic elements, the integrated circuit surface can be reliably protected in the mechanical polishing process or the cutting process, and at the same time, The adhesive strength can be set to be strong enough to withstand the mechanical polishing or cutting process, and the adhesive strength of the pickup substrate can be easily transferred, so that the adhesive strength can be adapted to each purpose. Thereby, the reliability in each process can be improved. Further, by making each bonding means different, it is possible to prevent the arrangement of the electronic elements from being disturbed when the electronic elements are transferred from the holding substrate to the pickup substrate.

  Furthermore, by fixing the electronic element to a display substrate (transparent substrate or counter substrate) provided with a transparent thermoplastic resin film that can be plastically deformed, the electronic element can be easily and reliably misaligned during and after mounting. Can be prevented by the method. At this time, a transparent thermoplastic resin film is not attached to the pickup device by applying a fluororesin to the surface of the pickup device that adsorbs the electronic elements. In particular, when the electronic element is pressed after the electronic element is placed and held on the transparent thermoplastic resin film, the electronic element is made transparent by applying pressure in the direction opposite to the adsorption force by the pickup device. Accordingly, the electronic element can be brought into close contact with the transparent thermoplastic resin film, and the electronic element can be reliably separated from the pickup device, and the electronic element can be prevented from being misaligned in the transparent thermoplastic resin film.

  In addition, by covering the upper surface of the electronic element, that is, the side surface portion excluding the integrated circuit forming portion with a transparent ultraviolet curable resin film, the electronic element can be securely fixed and the wiring drawn from the upper surface of the electronic element is stable. Will be formed.

  The electronic device mounting apparatus used in the electronic device selective transfer method of the above embodiment mainly performs a process of picking up the electronic device and mounting it on a display substrate (transparent substrate or counter substrate). is there. In the electronic device selective transfer method of the above embodiment, since steps other than this step can be performed using a known manufacturing apparatus, only the electronic device mounting apparatus of the above embodiment is newly introduced. Thus, the electronic device selective transfer method of the above embodiment can be easily realized. In addition, since existing facilities can be used, it can be implemented at low cost.

  In addition, the wiring formation method after the electronic element transfer of the electronic device of the above embodiment uses a screen mask in which a predetermined pattern is formed while the wiring that passes through the electronic element that controls a plurality of pixels is formed. Since it is formed by screen printing, it is possible to remarkably improve the work efficiency of wiring formation, which can only form a complicated and expensive thin film, and to perform wiring at low cost.

  According to the display substrate (transparent substrate or counter substrate) of the above-described embodiment, the electronic element that controls a plurality of pixels with one integrated circuit is wired on the display substrate (transparent substrate or counter substrate) facing one substrate. In addition, since it is arranged in plural, there is an effect at any point where wiring saving is possible. In other words, the electronic element is an electronic element that controls a plurality of pixels (light-emitting layers) with a single integrated circuit, and is arranged at approximately the center of the pixel array of i rows and j columns, and is connected to each pixel through the wiring. Therefore, it is possible to reduce the number of wirings (reducing wiring).

  Further, in Patent Document 2, since the elements are arranged at a 2-pixel pitch, the wiring portion is inserted at a 2-pixel pitch. In this case, since it is divided into two colors such as RG, BR, GB, RG,. On the other hand, as in the present invention, when i × j is a multiple of 3 in the i row and j column, and the electronic element is composed of 3 pixels of 3 colors, a plurality of sets are formed by one integrated circuit. Since the three colors of RGB can be separated in a collective form, it is possible to perform the necessary color development and prevent color mixing with adjacent pixels, thereby improving contrast. Can also be expected. Furthermore, if the control of 3 colors × 4 pixels arranged in 2 rows and 6 columns is performed, since the elements are arranged at a pitch of 6 pixels, the three colors of RGB can be separated in a collective form. Necessary color development can be performed. Further, by separating the colors by RGB, it is possible to expect an improvement in contrast by preventing color mixing with adjacent pixels.

It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 1st Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 2nd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 2nd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 2nd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 2nd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 2nd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 3rd Embodiment. It is a figure explaining the manufacturing method of the optical display apparatus in 3rd Embodiment. It is a top view showing an outline of an integrated circuit. It is a top view which shows the state in which the protective film was formed on the integrated circuit. It is a top view which shows the state in which the integrated circuit was formed on the silicon substrate. It is a top view of a display substrate. It is a top view of a silicon substrate. It is sectional drawing which shows the mechanical polishing of a silicon substrate. It is sectional drawing which shows the front-and-back inversion of a silicon substrate. It is sectional drawing of the silicon substrate after front-back inversion. It is sectional drawing of the patterned silicon substrate. It is explanatory drawing of sandblasting. It is sectional drawing of the silicon substrate after photoresist peeling. It is a top view of a vacuum chuck. It is explanatory drawing of selection of an electronic element. It is sectional drawing which shows the pick-up of an electronic element. It is sectional drawing of the display substrate which laminated the thermoplastic resin film. It is explanatory drawing which shows mounting of an electronic element. It is sectional drawing of the display board | substrate after mounting of an electronic element. It is sectional drawing of the display board | substrate which apply | coated the transparent ultraviolet curable resin film. It is explanatory drawing which shows ultraviolet irradiation. It is sectional drawing of the display substrate from which the ultraviolet curable resin film was partially removed. It is sectional drawing of the display substrate in which wiring was formed. It is sectional drawing of the display substrate in which the contact hole and the ball solder were formed. It is a top view of a display substrate. It is a top view of the display substrate of another example. It is a flowchart of an optical display apparatus manufacturing process. It is sectional drawing of the patterned silicon substrate. It is explanatory drawing of sandblasting. It is sectional drawing of the silicon substrate after photoresist peeling. It is explanatory drawing which shows the front-and-back inversion of a silicon substrate. It is sectional drawing of the silicon substrate after front-back inversion. It is the schematic of the mounting apparatus of an electronic element. (A) shows an example of an electronic element in which wiring passing through the inside is formed and an example of a screen mask when wiring is formed by screen printing using the electronic element, compared with a top view of a display substrate. It is a figure shown, and (b) is a figure of the screen mask corresponding to the wiring of the display board of (c). It is a top view which shows the other example of the pixel arrangement | sequence applied to this invention. It is a top view which shows the other example of the pixel arrangement | sequence applied to this invention. It is a figure explaining the patent document 2 and the selective transfer method applied to this invention in comparison. It is a figure explaining the patent document 2 and the selective transfer method applied to this invention in comparison. It is a figure which shows the arrangement pattern and pixel arrangement | sequence of an electronic element applied to this invention. It is a top view which shows the example of the arrangement pattern and pixel arrangement of the conventional electronic element. (A) is sectional drawing of the conventional organic EL display of a bottom emission system, (b) is sectional drawing of the organic EL display of the conventional top emission system.

Explanation of symbols

1 Transparent substrate 2 Transparent electrode 3 Light emitting layer (pixel)
4 Back electrode 5 Side wall protective film 6a, 6b Barrier layer 7 Planarizing film 8 Organic film 9, 19 Chip type integrated circuit (electronic element)
DESCRIPTION OF SYMBOLS 10 Contact hole 10a Connection part 11 Conductive material 12 Wiring 13 Insulating film 14 Organic film 15 Opposite substrate 16 Solder ball D1, D2, D3 Organic EL display (optical display device)

Claims (9)

A plurality of pixels composed of a light emitting layer and an electronic element that controls the pixels are arranged in a layer on a transparent substrate, and is an optical display device that emits light emitted from the light emitting layer from the lower transparent substrate side,
The optical display device is characterized in that the electronic element is provided above the light emitting layer.   The optical display device according to claim 1, wherein a barrier layer for preventing intrusion of oxygen and moisture into the light emitting layer is provided above the light emitting layer.   The optical display device according to claim 1, wherein the electronic element includes a circuit that supplies a steady current corresponding to light emission intensity required for the light emitting layer.   2. The optical display device according to claim 1, wherein the electronic element is a chip-type crystalline silicon integrated circuit.   2. The optical display device according to claim 1, wherein the electronic element is an integrated circuit having a polycrystalline silicon thin film transistor as a basic component.   2. The optical display device according to claim 1, wherein the electronic element is an amorphous silicon thin film transistor.   The optical display device according to claim 1, wherein the light emitting layer is an organic EL, an inorganic EL, an electronic paper, or a mixture thereof. In the method of manufacturing an optical display device in which a plurality of pixels formed of a light emitting layer and an electronic element that controls the pixels are arranged in a layer on a transparent substrate, and the light emitted from the light emitting layer is emitted from the lower transparent substrate side.
A method for manufacturing an optical display device, comprising: forming a light emitting layer on a transparent substrate; and forming an electronic element in an upper layer than the light emitting layer. In the method of manufacturing an optical display device in which a plurality of pixels formed of a light emitting layer and an electronic element that controls the pixels are arranged in a layer on a transparent substrate, and the light emitted from the light emitting layer is emitted from the lower transparent substrate side.
A plurality of pixels made of a light emitting layer is formed on the transparent substrate side, and a plurality of electronic elements for controlling the pixels are formed on the opposite substrate side arranged to face the transparent substrate, and both the light emitting layer and the electronic elements are placed inside. A method for manufacturing an optical display device, characterized in that substrates are superposed.

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