JP2005088068A - Laser beam machining apparatus and laser beam machining method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent degradation of the reliability and the yield of a work by the stuff scattered from the work produced when performing laser beam machining. <P>SOLUTION: Plume which is heated and transpired from a work by laser beam is scattered in the laser beam incident direction. The plume is changed in the direction by the feed gas flow 16 from an inner port 14 side in an annular nozzle 11 and sucked by the exhaust gas flow 17 from the outer port 15 of the annular nozzle 11. Deposition of the plume on the work A12 is prevented thereby. Further, by the supply gas flow 16 inside the annular nozzle 11, degradation of the lens characteristic caused by arrival and deposition of the stuff scattered from the work A12 on a focusing lens A can be simultaneously prevented. A laser beam machining apparatus capable of realizing the consistent machining can thus be provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a laser processing apparatus and a laser processing method for performing fine processing using laser light.

Conventional brittle materials such as silicon wafers are cut by crushing with a mechanical blade or the like. (For example, see Patent Document 1)
FIG. 11 shows the above-described conventional silicon wafer cutting method, wherein 40 is a work piece B made of a brittle material (silicon wafer or the like), 38 is a blade, and 39 is abrasive grains.

  In the mechanical dicing configured as described above, the workpiece is cut when the blade 38 rotates at a high speed. In particular, when cutting the workpiece B40, the abrasive grains 39 such as diamond attached to the outer periphery of the blade are crushed by an impact when they hit the workpiece 40, thereby forming or cutting grooves.

  On the other hand, a laser processing application field using a laser processing apparatus has spread to microfabrication and groove formation and cutting for composite materials.

In such a cutting method using laser light, the workpiece is irradiated with laser light and melted. Alternatively, only the surface of the workpiece is irradiated with laser light to form a stress strain and mechanically cleaved in a subsequent process. Alternatively, a denaturation layer is formed in a part of the workpiece by performing multiphoton absorption by focusing light on a material that normally does not absorb laser light, and mechanically cleaving later. (For example, see Patent Document 2)
FIG. 10 shows the conventional silicon wafer cutting method, in which 37 is a substrate made of a brittle material (silicon wafer or the like), 34 is a circuit forming layer formed on the brittle material, and 8 is absorbed by a workpiece. The laser beams A and 34 having characteristics are a circuit forming layer formed of a brittle material, 36 is a dicing film for holding the brittle material, 31 is a supply nozzle for blowing out high-pressure gas, and 32 is from the nozzle 104 described above. An exhaust nozzle for sucking out the high-pressure gas blown out and scattered matter generated by laser processing from the substrate 37, and a condensing lens A for condensing or projecting the laser light on a workpiece (brittle material) It is.

  In the silicon wafer processing method using the laser configured as described above, the laser beam A8 is condensed on the substrate 37 via the condensing lens A7 on the substrate 37, so that the substrate 37 and the circuit forming layer 34 are fused or cut. Processing. At this time, the scattered matter from the workpiece generated from the substrate 37 and the circuit forming layer 34 is prevented from adhering to the condenser lens A7 and the laser beam is processed by the scattered matter from the substrate 37 and the circuit forming layer 34. In order not to be absorbed and scattered before reaching the object, the high-pressure gas discharged from the supply nozzle 31 prevents the scattered object from being processed by using the exhaust nozzle 32 and absorbs dust.

  FIG. 12 shows a conventional silicon wafer cutting method using the above-mentioned laser, 42 is a laser beam B, 43 is a condensing lens B for condensing the laser beam on the workpiece, and 37 is a workpiece. A substrate, 35 is a melt-modified region, 34 is a circuit forming layer formed on the surface of the base material, and 36 is a dicing film attached to the back surface of the base material to hold the substrate 37.

In the silicon wafer processing method using the laser configured as described above, the laser beam B42 having a wavelength transmissive to the dicing film 36 and the substrate 37 is used to collect the laser beam B42 at a high density in the center of the substrate using the condenser lens B43. By melting, the laser beam is absorbed only in the vicinity of the center of the substrate 37 by utilizing multiphoton absorption, which is a non-linear phenomenon generated by increasing the laser beam intensity. By forming the modified region 35, the mechanical strength of the substrate 37 is lowered, and by applying a force to the melt modified region 35 part, the substrate 37 is mechanically cleaved.
Japanese Patent Laid-Open No. 01-196850 JP 2002-192367 A

  However, in conventional processing using laser light, chipping that occurs during processing of brittle materials, etc. can be suppressed, but the generation of scattered materials from the workpiece generated during processing affects the workpiece. And has a problem of reducing the processing quality of the workpiece and the yield of the processed product.

  The purpose of the conventional nozzle is to protect the optical components from the scattered object from the workpiece, so that the scattered object generated from the workpiece cannot be removed sufficiently. There existed the subject of reducing the processing quality given to a processed material, and the yield of a processed product.

  The present invention provides a laser processing apparatus and a processing method capable of solving the above-described problems.

    In order to solve the above problems, the present invention includes a laser oscillator that generates laser light, a lens that focuses the laser light on a workpiece, and a nozzle that is disposed between the lens and the workpiece, An injection unit for injecting high-pressure gas to the nozzle and a suction unit for sucking the gas are provided, and the laser light emitted from the laser oscillator reaches the condenser lens via a shaping optical system or the like, The laser beam condensed by the condenser lens is absorbed by the workpiece and melts the workpiece. At this time, the plume heated and evaporated from the workpiece by the laser light is scattered in the laser light incident direction, but the scattered matter is changed in direction by the high pressure gas from the nozzle and sucked by the suction part of the nozzle. Thus, the scattered matter (plume) can be prevented from adhering to the workpiece.

  In addition, since the high-pressure gas from the nozzle can simultaneously prevent deterioration of lens characteristics caused by scattered objects from the workpiece reaching and attaching to the condenser lens, a laser processing apparatus capable of realizing stable processing can be provided.

  In the present invention, since at least one of the injection port connected to the ejection unit or the suction port connected to the suction unit is provided at a position offset from the center of the nozzle, the gas in the ejection unit or the suction unit becomes a swirling flow, and the laser beam Suppresses the turbulence of the gas flow in the vicinity of the passage path and guides the scattered matter (plume) along the wall surface of the nozzle, thereby preventing the scattered matter from adhering to the optical components when processing the workpiece. It is possible to provide a laser processing apparatus capable of improving the capture rate of the scattered matter of the nozzle and realizing stable processing.

  Further, the present invention provides a sheet for preventing scattered objects from the workpiece generated during laser processing from adhering to the workpiece, the sheet being in close contact with the surface of the workpiece, and simultaneously irradiating the sheet and the workpiece with laser irradiation. Therefore, the laser light emitted from the laser oscillator reaches the condenser lens via a shaping optical system or the like, and the laser light condensed by the condenser lens corresponds to the wavelength of the laser light. The sheet having absorptivity is disposed on the surface of the work piece through an adhesive or adhesive layer, and is removed by the laser beam to form an opening.

  The laser beam reaches the workpiece through the opening of the sheet and is absorbed and melts the workpiece. At this time, the plume heated and evaporated from the workpiece by the laser beam is scattered in the laser beam incident direction and then falls again in the workpiece direction. The fallen object drops and adheres onto the sheet. The plume can be prevented from adhering to the workpiece by removing the sheet from the workpiece after finishing the processing.

  Further, the present invention is a laser processing method in which a film of a polymer aqueous solution is formed on the surface of the workpiece, and the film and the workpiece are irradiated with laser light at the same time. Therefore, the laser light emitted from the laser oscillator is shaped optically. The light reaches the condenser lens via a system or the like and is condensed by the condenser lens. The film of the polymer aqueous solution is absorbable with respect to the wavelength of the laser beam. The film of the polymer aqueous solution is removed by the focused laser beam to form an opening. The laser light reaches the workpiece through the opening of the polymer aqueous solution film and is absorbed and melts the workpiece. At this time, the plume heated and evaporated from the workpiece by the laser beam is scattered in the laser beam incident direction and then falls again in the workpiece direction. The fallen object drops and adheres to the polymer aqueous solution film. After the processing is completed, the aqueous polymer solution is washed and removed with water or the like, thereby preventing the plume from adhering to the workpiece again.

  As described above, the present invention has a function of preventing the scattered object from the workpiece accompanying the laser beam processing from adhering to the workpiece again, and suppresses the scattered object from the workpiece. While providing a processing apparatus and a processing method, and producing using the said laser processing apparatus and a processing method, a reliable silicon wafer can be provided.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

(Embodiment 1)
1 and 2, 1 is a laser oscillator, 2 is a lens A constituting a shaping optical system, 3 is a lens B constituting a shaping optical system, and 4 is a position on the optical axis of a lens B constituting the shaping optical system. 5 is a mask A for changing the processing width, 6 is a bend mirror for guiding the laser beam emitted from the laser oscillator 1 to a processing point, and 7 is a laser beam at the mask position. The condensing lenses A and 8 for reducing and projecting (condensing) the beam profile of the laser beam to the processing point are the laser light A emitted from the laser oscillator 1, and 11 is a scattered object generated during processing from the workpiece A12. An annular nozzle for sucking dust, 9 is an air supply port that is an outlet of the annular nozzle, 10 is an exhaust port that is an intake port of the annular nozzle, 14 is an inner port of the annular nozzle that is an ejection portion connected to the air supply port 9, 1 The annular nozzle outer port is a suction portion connected to the exhaust ports 10, 16 feed gas stream, 17 is an exhaust gas stream.

  The operation of the laser processing apparatus configured as described above will be described.

  The laser beam A8 emitted from the laser oscillator 1 reaches the condenser lens A7 through a shaping optical system or the like. The laser beam condensed by the condenser lens A is absorbed by the workpiece A12 and melts the workpiece. At this time, the scattered matter (plume) heated and evaporated by the laser beam from the workpiece is scattered in the laser beam incident direction, but the direction is changed by the supply gas flow 16 from the annular nozzle inner port 14 side of the annular nozzle 11. The plume is prevented from adhering to the workpiece A12 by being changed and sucked by the exhaust gas flow 17 from the annular nozzle outer port 15 of the annular nozzle 11. Further, stable processing can be achieved by simultaneously preventing deterioration of lens characteristics caused by the scattered gas from the work A reaching the condenser lens A by the supply gas flow 16 flowing inside the annular nozzle 11. Can be provided.

  As described above, according to the present embodiment, the annular nozzle 11, the supply gas flow 16, and the exhaust gas flow 17 absorb the scattered material from the workpiece A generated by the laser processing, and thereby to the workpiece A. Thus, it is possible to provide a laser processing apparatus capable of realizing stable processing by preventing adhesion of the scattered matter (plume) and preventing deterioration of the optical component.

(Embodiment 2)
In the present embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 3 is a cross-sectional view of the annular nozzle, which is different from the first embodiment in that the position of the exhaust port 10 is offset from the center of gravity position axis of the annular nozzle.

  Hereinafter, the operation of the annular nozzle in the present embodiment will be described.

  By offsetting the position of the exhaust port 10, the gas flow is swirled (swirl flow), so that the scattered matter (plume) generated by laser processing from the workpiece A 12 along the wall surface constituting the annular nozzle 11. The laser processing apparatus which can implement | achieve stable processing by improving the capture rate of the plume of the said annular nozzle 11 by guide | inducing can be provided.

  In the second embodiment, the position of the exhaust port 10 is offset, but the position of the air supply port 9 may also be offset.

(Embodiment 3)
In the present embodiment, the same parts as those in the first and second embodiments are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 4 is a cross-sectional view showing the shape of the taper A18 provided at the workpiece-side tip of the annular nozzle 11. As shown in FIG.

  Hereinafter, the operation of the taper A18 provided in the annular nozzle 11 in the present embodiment will be described. By providing a taper at the tip of the annular nozzle 11 on the workpiece side, the gas flow ejected from the annular nozzle port 14 is swung at the tip of the annular nozzle, so that the gas flow reflected on the workpiece A is reflected. When the air is sucked from the annular nozzle outer port 15, it functions to smoothly suck the gas flow, and the taper provided in the annular nozzle outer port portion increases the trapping efficiency of the scattered matter from the annular workpiece. Work to raise.

  As described above, according to the present embodiment, the taper angle θ1 of the taper A provided in the annular nozzle has the effect of turning the gas flow ejected from the annular nozzle inner port 14, and the functions of the taper angles θ2 and θ3. By guiding the scattered matter (plume) generated by laser processing from the workpiece A along the wall surface constituting the annular nozzle, the capture rate of the scattered matter (plume) of the annular nozzle is improved, thereby stabilizing It is possible to provide a laser processing apparatus that can realize various processing.

  In the shape of the present embodiment, when the distance between the workpiece and the annular nozzle is 2 mm, the optimum taper angles are most effective by setting θ1 to 30 degrees, θ2 to 45 degrees, and θ3 to around 30 degrees. The above effects can be obtained.

  Further, by installing the exhaust port position provided on the annular nozzle 40 mm or more above the tip of the annular nozzle, the gas flow distribution near the processing point of the workpiece can be made uniform.

(Embodiment 4)
In the present embodiment, the same parts as those in the first to third embodiments are denoted by the same reference numerals, and detailed description thereof is omitted. In FIG. 5, reference numeral 20 denotes a laser sheet for preventing scattered matters generated by laser processing from the workpiece to adhere to the workpiece.

  The operation of the processing method configured as described above will be described.

  A laser sheet 20 for preventing scattered objects from the workpiece A12 generated during laser processing from adhering to the workpiece again and the protective sheet are brought into close contact with the surface of the workpiece, and the sheet and the workpiece are simultaneously irradiated with laser. In the processing method, the laser beam 8 emitted from the laser oscillator 1 reaches the condenser lens A7 through a shaping optical system or the like, and the laser beam condensed by the condenser lens A7 is the laser beam of the laser beam. The laser sheet having absorptivity with respect to the wavelength is disposed on the surface of the work piece through an adhesive or adhesive layer, and forms an opening by being removed by the laser light. The laser beam reaches the workpiece through the opening of the laser sheet and is absorbed and melts the workpiece. At this time, the plume heated and evaporated from the workpiece by the laser beam is scattered in the laser beam incident direction and then falls again in the workpiece direction. The fallen object drops and adheres to the laser sheet. By removing the laser sheet from the workpiece after the processing is completed, the plume can be prevented from adhering to the workpiece.

(Embodiment 5)
In the present embodiment, the same parts as those in the first to fourth embodiments are denoted by the same reference numerals, and detailed description thereof is omitted. In FIG. 6, reference numeral 21 denotes a film of a polymer aqueous solution for preventing scattered matter generated by laser processing from the workpiece to adhere to the workpiece.

  The operation of the processing method configured as described above will be described.

  This is a laser processing method in which a film 21 of a polymer aqueous solution is formed on the surface of a workpiece, and the film and the workpiece are simultaneously irradiated with a laser. Laser light 8 emitted from the laser oscillator 1 is used to form a shaping optical system or the like. The laser light that reaches the condensing lens A7 and is condensed by the condensing lens 7 is processed by removing the film of the polymer aqueous solution that has an absorptivity with respect to the wavelength of the laser light by the laser light. Thus, an opening is formed. The laser light reaches the workpiece through the opening of the polymer aqueous solution film and is absorbed and melts the workpiece. At this time, the plume heated and evaporated from the workpiece by the laser beam is scattered in the laser beam incident direction and then falls again in the workpiece direction. The fallen object drops and adheres to the polymer aqueous solution film. After the processing is completed, the polymer aqueous solution film is washed to remove the plume from the work piece, thereby preventing the plume from adhering to the work piece. be able to.

(Embodiment 6)
In FIG. 7, 1 is a laser oscillator, 2 is a lens A which is a first lens constituting the shaping optical system, 3 is a lens B which is a second lens constituting the shaping optical system, and 4 is a position of the lens B. 5 is a movable stage for moving the workpiece along the optical axis, 5 is a mask for controlling the beam diameter and beam profile irradiated to the workpiece A12, 6 is a bend mirror for guiding the laser beam to the workpiece A12, 7 is a condenser lens A for condensing the laser beam 8 on the workpiece A, 13 is a movable table for changing the laser irradiation position of the workpiece A, and 22 is incorporated in the laser resonator. An acoustooptic device for controlling the laser output and the oscillation frequency, 23 is a laser driving power source for operating the laser oscillator, 24 is a control operation of the acoustooptic device 22 and the movable stage 12. That shows the configured laser processing apparatus from the control circuit A.

  The operation of the laser processing apparatus configured as described above will be described.

  A pulse laser oscillator that generates laser light, an optical means that guides the laser light to the workpiece, and a control means that controls the output of the laser light. The pulse energy of the laser light to be irradiated depends on the type of the workpiece. The laser beam is controlled and changed, and the laser beam emitted from the laser oscillator 1 reaches the condenser lens A via a shaping optical system or the like, and the laser beam condensed by the condenser lens A is Absorbed by the workpiece and melts the workpiece. The pulse energy value and the oscillation frequency emitted from the laser oscillator are changed by changing the opening / closing time of the acoustooptic device. The acousto-optic element is controlled by changing the amount of energy accumulated in the laser medium inside the laser oscillator by normally opening and closing it for an arbitrary time by a signal from the control circuit A before the pulsed light oscillation. The By optimizing the pulse energy and oscillation frequency radiated from the laser oscillator according to the signal from the control circuit A, and operating the movable stage 4 to control the laser light passing through the mask A, the optimum beam profile is obtained. By realizing it, scattered matter generated by laser processing from the workpiece is suppressed. In addition, the movable stage controls the laser thermal energy required for processing the workpiece A, and thus functions to control the irradiation time of the laser beam to each part of the workpiece A according to the command of the control circuit A. .

  As described above, according to the present embodiment, by optimizing the acousto-optic element 22, the movable stage 4, and the movable table 13 with respect to the workpiece A 12, by realizing processing that suppresses scattered objects. Further, it is possible to provide a laser processing apparatus capable of ensuring the reliability of a workpiece without removing scattered matters in a subsequent process using cleaning, plasma etching, or the like.

  In the sixth embodiment, the acoustooptic element 22 is used as the output control element of the laser oscillator, but an electrooptic element may be used instead of the acoustooptic element 22.

(Embodiment 7)
In the present embodiment, the same parts as those in the sixth embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. In FIG. 8, reference numeral 25 denotes a 1 / 2λ plate for changing the polarization direction of the laser light emitted from the laser oscillator 1, and 26 denotes the 1 / 2λ plate 25 according to a signal from the control circuit B30. A rotating stage 27 for rotating the laser beam, a polarizing element 27 for reflecting or transmitting the laser light according to a polarization direction component, a damper 28 for dumping the laser light reflected by the polarizing element, and 23 for driving a laser oscillator. , 29 is a storage circuit for storing the processing conditions of the workpiece and the distance of the scattered object with respect to the pulse energy, 30 is the laser drive power supply 23 for operating the laser oscillator, the rotary stage 26, The laser processing apparatus comprised from the control circuit B which carries out control operation | movement of the movable stage 12 is shown.

  In this configuration, the control signal from the control circuit B is based on the circuit arrangement data of the workpiece stored in the storage circuit 29 and the accumulated data of the scattering distance of the scattered matter generated at the time of machining generated from the workpiece with respect to the pulse energy value. By changing the laser light reaching the workpiece by rotating the rotary stage, the workpiece is automatically changed by changing the laser light intensity distribution of the laser light passing through the mask 5 by the movable stage. By controlling the laser output and beam waveform applied to the substrate, processing is performed with the optimum laser output and beam waveform for the circuit arrangement of the workpiece. Further, the movable table 13 functions to control the laser light irradiation time to each part of the workpiece A according to the command of the control circuit A in order to control the laser thermal energy necessary for processing the workpiece A. To do.

  As described above, according to the present embodiment, the type of the workpiece is instructed by the control circuit B based on the data stored in the storage circuit 29 for the 1 / 2λ plate 25, the polarizing element 27, and the movable stage 4. By realizing processing that automatically suppresses scattered objects, laser processing that can ensure the reliability of the workpiece without removing the scattered objects in subsequent processes using cleaning, plasma etching, etc. An apparatus can be provided.

(Embodiment 8)
In FIG. 9, the scattering of the scattered matter generated from the workpiece with respect to the pulse energy of the laser beam generated when the laser beam is focused on the silicon wafer that is the workpiece as a result of the experiment using the sixth or seventh embodiment. An example of the experimental result showing distance is shown.

  The graph is experimental data representing the scattering distance of the scattered matter generated during processing with respect to the pulse energy when the cutting energy to be processed on the silicon wafer is fixed and the pulse energy applied to the workpiece is changed.

  Assuming that the scattering distance is 100 μm or less, it can be realized by processing with a pulse energy of 9 μJ / Pulse or less.

  Although an example is shown in FIG. 9, the slope of the graph changes depending on the type of workpiece, the cutting width, and the cutting depth.

  The laser processing apparatus and the laser processing method of the present invention have a function of preventing the scattered matter from the workpiece accompanying the laser beam processing from re-adhering to the workpiece, and the scattered matter from the workpiece is removed. Since it can be suppressed, it is useful for processing silicon wafers and the like that require high processing accuracy.

Configuration diagram of Embodiment 1 of laser processing apparatus of the present invention 1 is a longitudinal sectional view of an annular nozzle according to a first embodiment of a laser processing apparatus of the present invention. Sectional drawing of the annular nozzle in Embodiment 2 of the laser processing apparatus of this invention Longitudinal sectional view of an annular nozzle in Embodiment 3 of the laser processing apparatus of the present invention The block diagram in Embodiment 4 of the processing method of this invention The block diagram in Embodiment 5 of the processing method of this invention The block diagram in Embodiment 6 of the laser processing apparatus of this invention The block diagram in Embodiment 7 of the laser processing apparatus of this invention The figure which shows the experimental data of the scattering distance with respect to the pulse energy of the laser processing method of this invention Configuration diagram of conventional laser processing method Configuration diagram of conventional machine cutting processing method Configuration diagram of conventional laser processing method

Explanation of symbols

1 Laser oscillator 2 Lens A
3 Lens B
4 Movable stage 5 Mask A
6 Bend mirror 7 Condensing lens A
8 Laser light A
9 Air supply port 10 Exhaust port 11 Annular nozzle 12 Workpiece A
13 movable table 14 annular nozzle inner port 15 annular nozzle outer port 16 supply gas flow 17 exhaust gas flow 18 taper A
DESCRIPTION OF SYMBOLS 19 Dicing film 20 Laser sheet 21 Polymer aqueous solution film 22 Acoustooptic device 23 Laser drive power supply 24 Control circuit A
25 1 / 2λ wavelength plate 26 Rotating stage 27 Polarizing element 28 Damper 29 Memory circuit 30 Control circuit B
31 Supply Nozzle 32 Exhaust Nozzle 33 Gas Flow 34 Circuit Formation Layer 35 Melting Denaturation Area 36 Dicing Film 37 Substrate 38 Blade 39 Abrasive Grain 40 Workpiece B
41 Chipping 42 Laser light B
43 Condensing lens B

Claims (16)

A laser oscillator for generating laser light, a lens for condensing the laser light on a workpiece, a nozzle disposed between the lens and the workpiece, and an injection unit for injecting high-pressure gas to the nozzle, A laser processing apparatus provided with a suction part for sucking gas. The jet part is arrange | positioned inside a cyclic | annular nozzle, the suction part is arrange | positioned outside the said jet part, and it has comprised so that the gas flow rate attracted | sucked from a suction part may become larger than the gas flow rate injected from a jet part. The laser processing apparatus as described. The laser processing apparatus according to claim 2, wherein a ratio of a gas flow rate ejected from the ejection part and a gas flow rate suctioned from the suction part is 1: 5 or more. The laser processing apparatus according to any one of claims 1 to 3, wherein the suction port connected to the suction portion of the nozzle is 40 mm or more from the nozzle tip. The laser processing apparatus according to any one of claims 1 to 4, wherein at least one of an injection port connected to the ejection part or an intake port connected to the suction part is provided at a position offset from the center of the nozzle. The laser processing apparatus according to any one of claims 1 to 5, wherein an annular nozzle tip is tapered. A laser processing method in which scattered material from a workpiece generated during laser processing does not adhere to the workpiece, and the sheet is brought into close contact with the surface of the workpiece and the sheet and the workpiece are simultaneously irradiated with laser. A laser processing method in which a film of a polymer aqueous solution is formed on the surface of a workpiece, and the film and the workpiece are simultaneously irradiated with laser light. The laser processing apparatus according to any one of claims 1 to 6, wherein a wavelength of 200 nm to 1200 nm is used as a laser. The laser processing method according to claim 7 or 8, wherein laser irradiation is performed using the laser processing apparatus according to any one of claims 1 to 6. The laser processing method according to claim 10, wherein a silicon wafer is used as a workpiece. A pulse laser oscillator for generating laser light; optical means for guiding the laser light to the workpiece; and control means for controlling the output of the laser light, the control means corresponding to the type of the workpiece, Laser processing equipment that controls pulse energy. The laser processing apparatus according to claim 12, wherein the pulse energy of the laser light is 10 μJ / Pulse. The laser processing apparatus according to claim 12 or 13, wherein a silicon wafer is used as a workpiece. A pulse laser oscillator for generating laser light; optical means for guiding the laser light to a silicon wafer; control means for controlling the output of the laser light; and a storage circuit for storing processing parameters of the workpiece, the control A means is a laser processing apparatus that inputs processing parameters corresponding to the circuit arrangement formed on the silicon wafer from the storage circuit and controls the pulse energy of the laser beam to be irradiated. The laser processing apparatus according to claim 15, wherein a wavelength of 200 nm to 1200 nm is used as the laser.

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