JP2004284101A - Processing method using beam and apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing method for facilitating the cutting of an article to be processed such as single crystal silicon or the like, and an apparatus therefor. <P>SOLUTION: This processing apparatus is equipped with a throat part 102 having a pair of taper parts which are separated from each other on the surface side of the article 100 to be processed such as single crystal silicon or the like to prescribe a gap and expanded so as to be inclined with respect to the normal line direction of the surface of the article 100 to be processed and constituted so that the beam 101 emitted toward the article 100 to be processed is amplified to irradiate the processing position of the article to be processed and the surface prescribed by the irradiation direction and position of the beam of the article to be processed is used as a cutting surface to cut the article to be processed into thin plates. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for processing a workpiece, and more particularly to a processing method and an apparatus suitable for cutting a workpiece into a thin plate.
[0002]
[Prior art]
As a processing technique for forming a single-crystal silicon thin film on a substrate made of synthetic quartz or the like, a smart cut method is known (for example, see Patent Documents 1 and 2). The smart cut method (published by SOITEC, France, 1996) uses a hydrogen embrittlement to cut a silicon wafer using a beam. Here, to explain the outline of the smart cut method, a thermal oxide film is formed by thermally oxidizing the bond wafer, and then hydrogen ions are added by an ion implantation method, and the inside of the bond wafer is A microcavity terminated with hydrogen (also referred to as a “hydrogen implanted layer”) is formed, and the bond wafer and the base wafer serving as a thin film support substrate are bonded at room temperature and subjected to a heat treatment at about 500 ° C. Hydrogen embrittlement occurs in the hydrogen implanted layer, a fracture layer due to hydrogen embrittlement is formed, the bond wafer is easily peeled off, leaving only the single crystal silicon thin film, and the thermal oxide film and the single crystal silicon as bases on the base wafer A film is formed (the thickness of the single crystal silicon film is determined by the thickness of the thermal oxide film and the implantation depth of hydrogen ion implantation).
[0003]
Further, as background art, welding using an electron beam is known, or a technique of processing a semiconductor surface by an electron beam is also known (for example, see Patent Document 3 for processing of a semiconductor surface). Further, in the case where etching is performed chemically using an acid or the like, directional etching in which etching proceeds only in a certain crystal axis direction is known (for example, see Patent Document 4).
[0004]
[Patent Document 1]
JP-A-11-163363 (FIG. 2)
[Patent Document 2]
US Patent No. 5,374,564 [Patent Document 3]
Japanese Patent Application Laid-Open No. 2000-173997 [Patent Document 4]
JP-A-2003-17353
[Problems to be solved by the invention]
SUMMARY OF THE INVENTION An object of the present invention is to provide a method and an apparatus for easily and precisely cutting a single crystal ingot using cleavage.
[0006]
[Means for Solving the Problems]
According to one aspect of the present invention, there is provided a method for receiving a beam irradiated from a beam source toward a workpiece, amplifying the beam, and irradiating the beam to a processing target area of the workpiece.
[0007]
An apparatus according to another aspect of the present invention includes a beam source that supplies a beam, and is disposed between the beam source and a workpiece, and is irradiated from the beam source toward the workpiece. Means are provided for amplifying and supplying the beam to the workpiece.
[0008]
According to the present invention having such a configuration, the workpiece is cut into a thin plate with the plane defined by the beam irradiation direction and the position of the workpiece as a cleavage (cutting) plane, thereby facilitating the cleavage of the single crystal semiconductor substrate. .
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described. In a preferred embodiment of the present invention, a beam irradiated from a beam source toward a workpiece such as a single crystal semiconductor substrate or an ingot is amplified and the amplified beam is processed in a processing target area of the workpiece. Irradiation.
[0010]
According to a preferred embodiment of the present invention, on the surface side of the workpiece, the ends are separated from each other to define a predetermined gap, and each is defined in a direction normal to the surface of the workpiece. A throat (tapered throat) having a pair of tapered portions inclined toward the beam source and inclined toward the beam source is provided, and the surface of the pair of tapered portions reflects the beam, and A beam from a source is collected near a target position on a workpiece.
[0011]
Alternatively, the tapered throat is not limited to a configuration having one pair of tapers. In other words, a configuration is also provided in which one tapered portion that abuts on the surface of the workpiece and is inclined toward the beam source at a predetermined angle with respect to the normal direction of the surface of the workpiece is provided. Good. In this case, the surface of the tapered portion reflects the beam, and the workpiece is irradiated with the beam with a contact portion with the workpiece as an end.
[0012]
In the present embodiment, the workpiece is arranged such that the direction of the cleavage plane of the crystal structure of the workpiece is parallel to the collected beam.
[0013]
When the workpiece is made of single crystal silicon, the beam is made of ions of at least one of oxygen, hydrogen, and nitrogen.
[0014]
Alternatively, the beam may be an electron beam focused on a workpiece.
[0015]
Alternatively, in this embodiment, a step of irradiating the workpiece with the beam and then etching may be included.
[0016]
Alternatively, in the present embodiment, the beam may be an electron beam, and control may be performed such that the irradiated electron beam is reciprocated (oscillated) at a predetermined width in the processing target region.
[0017]
Alternatively, in the present embodiment, a beam from a beam source is irradiated on a workpiece from a direction having a predetermined relationship with a cleavage plane of the workpiece, and after the beam irradiation, A configuration may be employed in which the workpiece is cleaved. In this case, the beam may be irradiated perpendicular to the cleavage plane of the workpiece. In this embodiment, the beam from the beam source is directly irradiated on the workpiece, or the beam from the beam source is collected and the beam amount irradiated per unit area of the processing target region of the workpiece is amplified, Either or both of them may be used.
[0018]
Hereinafter, description will be made in accordance with various embodiments.
[0019]
Embodiment 1
A description will be given of beam narrowing and dose increase in one embodiment of the present invention. An ion beam such as hydrogen ions is implanted into a workpiece made of a single crystal silicon ingot (or silicon wafer). To create a sufficiently large lattice defect, a throat on a taper is arranged and the beam is guided there. To do. According to the present embodiment having such a configuration, the dose of the ion beam applied to the workpiece is greatly increased, and the strain introduced into the single crystal of the workpiece is increased.
[0020]
The principle of the present embodiment will be described with reference to FIG. A beam 101 from a beam source (not shown) is irradiated toward a workpiece, and the beam 101 is incident on a throat 102 functioning as a beam amplifying unit and a beam mask unit, and is reflected on a tapered surface of the throat 102. Therefore, the dose in the gap 106 between the single crystal silicon ingot 100 and the end where the throat 102 is in contact increases. That is, as shown in FIG. 1, when the beam 101 enters the surface at a shallow angle, it is reflected at the taper, thereby increasing the dose.
[0021]
Here, assuming that all the beams 101 incident on the tapered portion are reflected and guided to the throat 102, the dose increases as follows.
[0022]
That is,
Taper angle = 5 degrees,
Length = 2mm,
Gap length = 0.01mm
Then, the amplification factor x becomes
x = 2 * tan (5 °) /0.01*2=35
It becomes. That is, the beam dose is amplified up to about 35 times.
[0023]
The beam is focused on the gap 106 via the taper, and the beam flux at the gap 106 increases.
[0024]
However, in practice, the beam incident on the throat often does not completely reflect. Also, because such reflections reduce the energy of the beam, the beam will have a broad spectrum rather than being monochromatic.
[0025]
It is advantageous for the cleavage of the ingot that the energy of the irradiated beam has a broad spectrum instead of a single color. This is because the position where the beam arrives extends continuously from the surface of the silicon ingot to the inside. The beam 101 is driven in the direction of the crystal plane that causes cleavage.
[0026]
Note that the tapered throat 102 is made of a member that reflects an ion beam. That is, a metal such as aluminum, a semiconductor such as silicon, or a material that can guide an ion beam and whose surface can be mirror-finished, for example, is used.
[0027]
Means may be provided for rotating the substantially cylindrical single-crystal silicon ingot 100 with respect to the beam 101 around the center of the cross section, and thus with respect to the tapered throat 102.
[0028]
Embodiment 2
A description will now be given of beam focusing and dose increase in another embodiment of the present invention. In the above-described embodiment, the throats 102 having the taper are provided on both sides, and the portion where the beam is driven is linear. The throat 102 may be on one side only. In this case, a beam is irradiated on a surface that is not masked by the throat 102 and has silicon exposed. It is important that the surface of the single crystal silicon ingot 100 is in contact with the end of the throat 102. When the beam 101 is reflected, the reflected beam exits at almost the same angle as the incident angle, so that the large multiplication effect as described above cannot be expected. However, the cause of silicon cleavage is the concentration of stress in the crystal. If impurities (by ion implantation) increase rapidly from a certain surface, the stress is concentrated at that surface. This is because it is considered easy. The advantage of this method is that only the throat is provided on one side, so that adjustment of the interval (gap length) between the two throats is not required.
[0029]
Cleavage basically occurs at a certain crystal plane, and the plane on which stress is concentrated is extremely short. Specifically, it is set to about several tens angstroms (several nm). Adjusting this at the position of the taper is difficult to achieve with commercially available equipment such as a micrometer. The beam 101 needs to be implanted in the crystal plane direction that causes cleavage. That is, this is different from the above-described smart cut method in which the hydrogen-implanted layer is a cut surface (the cut surface is perpendicular to the hydrogen ion beam).
[0030]
Even if the angle of the throat 102 (the taper angle with respect to the direction of the fountain) is shallow, if the beam is reflected many times, the incident angle becomes large and deviates from the crystal plane. In such a case, a throat configuration on one side as shown in FIG. 2 is more preferable than preparing a pair of throats (see FIG. 1). Also in this embodiment, there may be provided a means for rotating the substantially cylindrical single crystal silicon ingot 100 with respect to the beam 101 around the center of the cross section thereof, and thus with respect to the tapered throat 102. .
[0031]
Embodiment 3
A description will be given of beam focusing and dose increase in another embodiment of the present invention. As shown in FIG. 3, the crystal of the single crystal silicon ingot 100 is installed at an angle. This is because silicon has the same crystal structure as diamond, and the surface that is easy to cleave is in the 110 direction, which has the longest distance between atoms. In order to drive a beam in this direction, the single crystal silicon ingot 100 is tilted and attached. is there. However, cleavage occurs in principle in the crystal axis direction. The single crystal silicon ingot 100 may be rotated around an axis orthogonal to the irradiation direction of the beam 101 as a center axis.
[0032]
As described above, in the smart cut method, when high-energy hydrogen ions (H +) with uniform energy are implanted into silicon, they are locally concentrated at a certain depth (a hydrogen-implanted layer). The silicon surface is peeled off from the surface and cut.
[0033]
In the conventional smart cut, a dose (dose amount) of, for example, about 1E17 cm ⁻² is required. This is a measure of how much ion dose is required for cleavage using cleavage. The application of the smart cut is limited because it takes several hours from the current ion source to implant the dose. For this reason, in the present invention, a throat is prepared to increase the beam dose and shorten the time.
[0034]
Usually, a rare gas such as argon is easily formed as an ion beam, but does not chemically bond with silicon. On the other hand, hydrogen, oxygen, and nitrogen combine with silicon to form a compound, which breaks the bond with silicon. Therefore, as shown in FIG. 4, as the ion species, hydrogen ions and the like are preferable in addition to oxygen ions.
[0035]
In order to cleave single crystal silicon, it is necessary to apply an impact or a force to a crystal defect portion. The thermal expansion coefficient of the silicon oxide film is at least five times greater in the direction perpendicular to the C axis than silicon. Therefore, when the temperature is rapidly changed after implanting oxygen ions, a large stress acts on the implanted portion, so that cleavage is facilitated. Hereinafter, the thermal expansion coefficient ^{(unit: x10} -6 / K) shows data.
[0036]
Si: 2.5
SiO2: 12.9 (C-axis vertical direction), 7.0 (C-axis direction), quartz glass (0.35)
Si3N4: 3.2-3.7
[0037]
Embodiment 4
Another embodiment of the present invention utilizes an electron beam (a focused electron beam) from an electron beam source, as shown in FIG. An electron beam can have an energy density ^three to four orders of magnitude higher (10 ³ to 10 ⁴ times) than an ion beam. Therefore, an electron beam is implanted in the direction of the 110 plane of the silicon single crystal. When the electrons lose energy and the irradiated part partially melts, dislocations and the like occur, and as a result, cleavage from the part is facilitated. Furthermore, when an electron beam is implanted, the implanted portion becomes hot, causing thermal expansion. This corresponds to setting up a knife edge at the position where the electron beam is implanted.
[0038]
Two processes of forming a lattice defect by an ion beam irradiation process and then cleaving by setting a knife edge or applying a temperature difference to cause thermal expansion are performed only once. This is a major feature when using an electron beam.
[0039]
In the case of an ion beam, in the energy range from 200 keV to 400 keV where a relatively good current can be obtained, the depth at which hydrogen ions are implanted into silicon is about 3 μm, and the depth is shorter for heavier ions.
[0040]
On the other hand, the electron beam can be driven three orders of magnitude deeper. Therefore, the condition for cleavage is improved because it is the same as when the knife edge has entered deep.
[0041]
Embodiment 5
As a fifth embodiment of the present invention, an example using directional etching will be described with reference to FIG. When the ion beam is implanted, the etching rate differs between the implanted location and the other location. When an argon ion or a hydrogen ion is implanted, a deeper lattice defect can be formed because the etching rate is different. In the present embodiment, the portion where the lattice defect has been formed is etched by the ion beam. That is, when etching is performed in the direction of the 110 plane, the cleavage is facilitated when cleavage is performed by setting up a knife edge or the like in a subsequent step.
[0042]
Embodiment 6
A sixth embodiment of the present invention will be described with reference to FIG. In this embodiment, an electron beam is driven at a high speed by vibrating a line with time. When the electron beam is implanted, instead of being implanted only at one point of the silicon ingot 100, the electron beam is implanted with a certain width and reciprocating between them at high speed, that is, by vibrating with time.
[0043]
In general, it is better to apply an external force along the cleavage plane rather than to cause cleavage by applying an external force at one point. However, in the electron beam irradiation, control for focusing the electron beam to one point is generally performed, and the beam cannot be injected on the line along the cleavage plane as it is.
[0044]
Then, the electron beam is driven while being reciprocated (oscillated temporally) along the plane (110 plane) where the electron beam is cleaved. If the period in which the electron beam oscillates temporally during this width is shorter than the time during which the sound wave in the silicon ingot 100 moves through the width, physically, an external force having a certain width is physically generated at the same time. Equivalent to what was given.
[0045]
Note that when the focus of the electron beam is not on a point but on a line, the above control is not necessary. However, when the width of irradiation is increased, reciprocation control along the width is effective.
[0046]
A seventh embodiment of the present invention will be described with reference to FIG. In this embodiment, hydrogen ions are implanted perpendicularly to the silicon ingot 110 surface. The hydrogen ion beam 101 is used for a smart cut method. When hydrogen ions are implanted with a predetermined energy, the hydrogen ions are intensively deposited at a certain distance, so that the covalent bond between the silicon atoms is broken, and the hydrogen ions are cut without applying external force. At this time, by changing the energy, the positions where the beams are accumulated are different, so that the thickness of the silicon wafer to be cut can be changed. In this embodiment, an ion beam is used, but it is necessary to implant hydrogen ions at a dose of 10 ¹⁷ cm ⁻² or more. This may take up to 24 to 48 hours using current hydrogen ion sources. For this reason, it is not used as a general method for cutting a silicon ingot, but is only used for a special purpose.
[0047]
On the other hand, since external force is used to cause cleavage, it is not necessary to drive even the dose for cutting naturally.
[0048]
Therefore, in this embodiment, a smaller dose may be implanted, and an external force may be applied to the position where the ion beam is accumulated by a knife edge or the like to cause cleavage.
[0049]
At this time, in addition to irradiating the silicon ingot 100 with an ion beam 101 from a beam source (not shown), a tapered throat 102 is used to increase the dose of the ion beam as in the first embodiment. Is also good. In this case, it is necessary to insert a beam to at least about 0.1 to 1.0 mm from the surface of the ingot.
[0050]
In the above embodiment, cleavage may be performed in a state where the single crystal ingot is impregnated with the liquid.
[0051]
Further, in the above embodiment, the beam may be applied to a plurality of locations on the surface of the ingot of the single crystal, and impact may be applied to the plurality of locations where the lattice defects are generated, so that cleavage at the plurality of locations may be caused at a time. .
[0052]
In the above embodiment, a mechanism for holding both ends of the single crystal silicon ingot in the longitudinal direction may be provided to cleave the single crystal silicon ingot.
[0053]
In the above embodiment, a single crystal silicon ingot has been described as an example. However, the present invention is not limited to the silicon ingot, and may be a single crystal gallium arsenide ingot.
[0054]
In addition, the present invention is not limited to cutting a single-crystal silicon ingot into wafers, but may be applied to cutting single-crystal silicon or the like on an insulating substrate for SOI formation.
[0055]
In the above embodiment, the cleavage may be caused by stress concentration due to thermal expansion by raising or lowering the temperature of the single crystal ingot as compared with the temperature at the time of beam implantation.
[0056]
Further, in the above embodiment, the single crystal ingot may be cooled with liquid nitrogen or the like to lower the temperature of the single crystal ingot, and then the focused electron beam may be injected into the single crystal ingot.
[0057]
As described above, the present invention has been described with reference to the above embodiments. However, the present invention is not limited to the configuration of the above embodiments, and various modifications that can be made by those skilled in the art within the scope of the present invention. , Of course.
[0058]
【The invention's effect】
As described above, according to the present invention, there is an effect that the cutting of the single crystal semiconductor substrate is facilitated, the accuracy is improved, and the manufacturing cost is reduced.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a first embodiment of the present invention.
FIG. 2 is a diagram for explaining a second embodiment of the present invention.
FIG. 3 is a diagram for explaining a third embodiment of the present invention.
FIG. 4 is a diagram for explaining beam types in a third embodiment of the present invention.
FIG. 5 is a diagram for explaining a fourth embodiment of the present invention.
FIG. 6 is a diagram for explaining a fifth embodiment of the present invention.
FIG. 7 is a diagram for explaining a sixth embodiment of the present invention.
FIG. 8 is a diagram for explaining a seventh embodiment of the present invention.
[Explanation of symbols]
100 single crystal silicon ingot (single crystal silicon)
Reference Signs List 101 beam 102 throat 103 electron beam source 104 etching solution 105 container 106 gap

Claims (45)

Generating a beam at the beam source;
Receiving a beam irradiated toward the workpiece from the beam source, amplifying the beam and irradiating a processing target area of the workpiece,
A processing method comprising: 2. The processing according to claim 1, further comprising collecting beams emitted from the beam source toward the workpiece, and amplifying an amount of the beam emitted per unit area of a processing target area of the workpiece. Method. 2. The processing method according to claim 1, wherein the direction of the beam applied to the workpiece is a cutting direction of the workpiece. A step of cutting the workpiece with a plane defined by a direction of the beam and a direction of an irradiation position of the beam on the surface of the workpiece as a cutting plane, Item 5. The processing method according to Item 1. On the surface side of the workpiece, the ends are separated from each other to define a predetermined gap, each of which is inclined toward the normal direction of the surface of the workpiece and expands toward the beam source. Prepare a pair of tapered parts that are open,
The processing method according to claim 1, wherein the pair of tapered surfaces reflect an incident beam, and the beam from the beam source is collected in a processing target area of the workpiece. Abut on the surface of the workpiece, prepare one tapered portion extending toward the beam source inclined at a predetermined angle with respect to the normal direction of the surface of the workpiece,
The processing according to claim 1, wherein the surface of the tapered portion reflects an incident beam, and the workpiece is irradiated with a beam with a contact portion with the workpiece as an end. Method. The processing method according to claim 1, further comprising a step of relatively rotating the workpiece and the beam applied to the workpiece. The workpiece comprises a single crystal semiconductor substrate member,
2. The workpiece according to claim 1, wherein the workpiece is arranged in a positional relationship in which a cleavage plane direction of a crystal structure of the workpiece is parallel to a beam irradiated on the workpiece. 3. Processing method. The processing method according to claim 1, wherein the beam is an ion beam. The workpiece is made of single crystal silicon,
2. The processing method according to claim 1, wherein the beam comprises ions of at least one of oxygen, hydrogen, and nitrogen. 2. The processing method according to claim 1, wherein said beam comprises an electron beam. The workpiece is made of single crystal silicon,
The method according to claim 1, wherein the beam comprises a focused electron beam. 2. The processing method according to claim 1, further comprising a step of performing etching after irradiating the workpiece with the beam. The beam comprises an electron beam;
The processing method according to claim 1, further comprising reciprocating the irradiated electron beam at a predetermined width in the processing target area. The processing method according to claim 1, wherein the irradiated beam is perpendicular to a cut surface of the workpiece. Irradiating a beam from a beam source to a workpiece from a direction having a predetermined relationship with a cleavage plane of the workpiece,
Cleaving the workpiece after the beam irradiation;
A processing method comprising: 17. The processing method according to claim 16, wherein the beam is irradiated parallel or perpendicular to a cleavage plane of the workpiece. Either irradiate the beam from the beam source as it is to the workpiece, or amplify the amount of beam irradiated per unit area of the processing target area of the workpiece by collecting the beams from the beam source. 18. The processing method according to claim 16, wherein a beam is irradiated by using one or both of them. The processing method according to claim 1, wherein the temperature of the workpiece is set higher or lower than the temperature at the time of beam implantation to cause cleavage due to stress concentration due to thermal expansion. 12. The processing method according to claim 11, further comprising irradiating the electron beam after cooling the workpiece. A beam source for providing a beam;
The beam supply source, disposed between the workpiece, receives a beam irradiated toward the workpiece from the beam supply source, amplifies the beam and in the processing target area of the workpiece Means for supplying;
A processing apparatus comprising: 22. The apparatus according to claim 21, further comprising means for collecting a beam irradiated from the beam source toward the workpiece, and amplifying an amount of the beam emitted per unit area of a processing target area of the workpiece. The processing device described. 22. The processing apparatus according to claim 21, wherein the direction of the irradiated beam is a cutting direction of the workpiece. The workpiece is cut with a plane defined by a direction of the beam to be irradiated and a direction of an irradiation position of the beam on the surface of the workpiece as a cutting plane, The processing apparatus according to claim 21, characterized in that: On the surface side of the workpiece, the ends are separated from each other to define a predetermined gap, each of which is inclined toward the normal direction of the surface of the workpiece and expands toward the beam source. A throat having a pair of open tapered portions;
22. The processing apparatus according to claim 21, wherein surfaces of the pair of tapered portions have a function of reflecting the beam. A throat having one tapered portion that is in contact with the surface of the workpiece and that is inclined toward the beam source at a predetermined angle with respect to a normal direction of the surface of the workpiece,
The surface of the tapered portion has a function of reflecting a beam,
22. The processing apparatus according to claim 21, wherein the workpiece is irradiated with a beam with a contact portion with the workpiece as an end. 22. The processing apparatus according to claim 21, further comprising a unit configured to relatively rotate the workpiece and the beam applied to the workpiece. The workpiece comprises a single crystal semiconductor substrate member,
22. The processing apparatus according to claim 21, wherein the workpiece is arranged such that a cleavage plane direction of a crystal structure of the workpiece is parallel to the beam. The processing apparatus according to claim 21, wherein the beam is an ion beam. The workpiece is made of single crystal silicon,
22. The processing apparatus according to claim 21, wherein the beam comprises ions of at least one element of oxygen, hydrogen, and nitrogen. 22. The processing apparatus according to claim 21, wherein the beam is an electron beam. The workpiece is made of single crystal silicon,
22. The processing apparatus according to claim 21, wherein the beam comprises a focused electron beam. 22. The processing apparatus according to claim 21, wherein the processing target portion of the workpiece irradiated with the beam is etched and cut. The beam comprises an electron beam;
22. The processing apparatus according to claim 21, wherein the irradiated electron beam reciprocates at a predetermined width in the processing target area. 22. The processing apparatus according to claim 21, wherein a direction of the irradiated beam is perpendicular to a cut surface of the workpiece. Workpiece,
A beam source for supplying a beam for processing;
With
The beam from the beam supply source is configured to irradiate the workpiece from a direction having a predetermined relationship with a cleavage plane of the workpiece, and the workpiece is A processing apparatus that is cut by cleavage after the beam irradiation. 37. The processing apparatus according to claim 36, wherein the beam is irradiated parallel or perpendicular to a cleavage plane of the workpiece. Either irradiate the beam from the beam source as it is to the workpiece, or amplify the amount of beam irradiated per unit area of the processing target area of the workpiece by collecting the beams from the beam source. 38. The processing apparatus according to claim 36, wherein a beam is irradiated using the or both of them. (A) In irradiating the surface of the single crystal ingot with a beam along the crystal axis direction corresponding to the cleavage plane of the crystal structure, the surface of the single crystal ingot is irradiated from the beam source toward the single crystal ingot. Amplifying and irradiating a beam to be processed to an area to be processed;
(B) cleaving a portion of the single crystal ingot irradiated with the beam, and cutting the wafer into a wafer having a cleavage plane as a cutting plane;
A cutting method, comprising: In the step (a), applying a processing beam in the crystal axis direction of the surface of the single crystal ingot to generate lattice defects along the crystal axis direction on the surface of the single crystal ingot. 40. The cutting method according to claim 39, wherein: 40. The cutting method according to claim 39, wherein the processing beam is an ion beam from an ion source. 40. The method according to claim 39, wherein, in the step (b), the cleavage is caused by applying an impact by setting a knife edge on a portion of the single crystal ingot where a lattice defect is generated. Cutting method. In the step (a), an electron beam for processing is directed in a crystal axis direction on a surface of the ingot of the single crystal, and the cleavage in the step (b) is caused by irradiation with the electron beam. The cutting method according to claim 39, wherein: 40. The cutting method according to claim 39, wherein the cleavage is caused by stress concentration due to thermal expansion by raising or lowering the temperature of the ingot of the single crystal as compared with the temperature at the time of beam implantation. . 40. The cutting method according to claim 39, wherein the single crystal ingot is cooled, the temperature of the single crystal ingot is lowered, and the electron beam is irradiated.

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