JP2004153096A - Aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner in which throughput is enhanced while sustaining a desired exposure accuracy when a mask pattern is exposed on a photosensitive substrate while scanning. <P>SOLUTION: The aligner illuminates a mask M having a patterned area PA with exposure light while moving the mask M and a photosensitive substrate synchronously thus transferring the pattern of te mask M onto the photosensitive substrate. The aligner has a blind for setting a plurality of illumination areas of exposure light for the mask M at a constant interval in the moving direction of the mask M. The blind sets the number of illumination areas and the interval thereof depending on the size of the patterned area PA of the mask M in the moving direction. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus that transfers a pattern of a mask onto a substrate while synchronously moving the mask and the substrate.
[0002]
[Prior art]
Electronic devices such as semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. The exposure apparatus used in this photolithography process has a mask stage on which a mask having a pattern is placed and moves two-dimensionally, and a substrate stage on which a photosensitive substrate is placed and moves two-dimensionally, and is formed on the mask. The projected pattern is projected on a photosensitive substrate via a projection optical system while sequentially moving the mask pattern and the substrate stage. The exposure device includes a batch exposure device that simultaneously transfers the entire mask pattern onto the photosensitive substrate, and a scanning exposure device that continuously transfers the mask pattern onto the photosensitive substrate while synchronously scanning the mask stage and the substrate stage. Two types of devices are mainly known. Among them, when manufacturing a semiconductor device or a liquid crystal display device having one chip pattern having a large size, a scanning exposure apparatus is mainly used due to a demand for a larger exposure area. A scanning exposure apparatus irradiates a mask with a slit-shaped illumination area extending in a direction intersecting the scanning direction, and scans the mask and the photosensitive substrate to transfer a pattern of the mask onto the photosensitive substrate. 1, 2).
[0003]
[Patent Document 1]
Japanese Patent Publication No. 52-32584
[Patent Document 2]
JP-A-4-277612
[0004]
[Problems to be solved by the invention]
In the scanning exposure apparatus, it is desirable to increase the scanning speed of the mask stage and the substrate stage from the viewpoint of improving the throughput. However, when the scanning speed is increased, the acceleration of the mask stage and the substrate stage must be increased accordingly. The increase in the acceleration of the stage causes vibration, and the generated vibration causes a problem that the exposure accuracy is reduced.
[0005]
The present invention has been made in view of such circumstances, and when exposing a pattern of a mask to a photosensitive substrate while synchronously moving the mask and the photosensitive substrate, exposure that can improve throughput while maintaining desired exposure accuracy is performed. It is intended to provide a device.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the present invention employs the following configuration corresponding to FIGS.
An exposure apparatus (EX) of the present invention illuminates a mask (M) with exposure light (EL) while synchronously moving a mask (M) having a pattern formation area (PA) on which a pattern is formed and a substrate (P). Then, in an exposure apparatus that transfers the pattern of the mask (M) onto the substrate (P), the illumination area (6A, 6B, 6C) of the exposure light (EL) with respect to the mask (M) is moved in the moving direction of the mask (M). An illumination area setting device (4) for setting a plurality of illumination areas at equal intervals is provided. The illumination area setting apparatus (4) includes a number of illumination areas (6A, 6B, 6C) and an interval between the illumination areas (6A, 6B, 6C). Is set in accordance with the size of the pattern forming area (PA) in the moving direction.
[0007]
According to the present invention, the illumination region of the exposure light with respect to the mask is set by arranging a plurality of regions at equal intervals in the scanning direction by the illumination region setting device. Even if scanning is not performed, it is only necessary to divide and illuminate the pattern formation region in each of the plurality of illumination regions, so that the entire pattern formation region can be illuminated in a short time. In addition, the illumination area setting device sets the number of illumination areas and the interval between the illumination areas according to the size of the pattern formation area in the scanning direction. Exposure processing can be performed.
[0008]
The exposure apparatus (EX) of the present invention illuminates the mask (M) with exposure light (EL) while synchronously moving the mask (M) and the substrate (P), and illuminates a pattern formed on the mask (M). In an exposure apparatus for transferring to a substrate (P), an illumination area setting device (4, 10, 11) for setting an illumination area of exposure light (EL) to a mask (M) and an illumination area setting device (4, 10, 11) ), A moving device (12) for moving the illumination area set in the direction opposite to the moving direction of the mask (M).
[0009]
According to the present invention, since the illumination area is moved in the direction opposite to the moving direction of the mask, the relative speed of the mask with respect to the illumination area can be increased without increasing the scanning speed of the mask stage supporting the mask. Therefore, the entire area of the pattern formation region of the mask can be illuminated with the illumination region in a short time.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a first embodiment of the exposure apparatus of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a first embodiment of the exposure apparatus of the present invention.
In FIG. 1, an exposure apparatus EX includes a mask stage MST that supports a mask M having a pattern formation region on which a pattern is formed, a substrate stage PST that supports a photosensitive substrate P, and a mask M that is supported by the mask stage MST. Of the mask M illuminated by the exposure light EL, and a projection optical system PL that projects the pattern of the mask M illuminated by the exposure light EL onto a photosensitive substrate P supported by a substrate stage PST. In the present embodiment, the exposure apparatus EX illuminates the mask M with the exposure light EL while synchronously moving the mask M and the photosensitive substrate P, and transfers a pattern formed on the mask M to the photosensitive substrate P, that is, a so-called slit. This is a scanning type exposure apparatus. In the following description, the direction parallel to the optical axis AX of the projection optical system PL is defined as the Z-axis direction, and the synchronous movement direction (scanning direction) is defined as the X-axis direction, the Z-axis direction, and X in a plane perpendicular to the Z-axis direction. A direction perpendicular to the axis direction (non-scanning direction) is defined as a Y-axis direction.
[0011]
The illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and includes an optical integrator for equalizing the illuminance of the light flux emitted from the light source 1 and the exposure light EL from the optical integrator. A condenser lens, a relay lens system, and deflection mirrors 3a and 3b for changing the direction of the optical path of the exposure light EL. The exposure light EL emitted from the illumination optical system IL includes, for example, ultraviolet bright lines (g-line, h-line, i-line) emitted from a mercury lamp and far ultraviolet light (KrF excimer laser light (wavelength: 248 nm)). DUV light), ArF excimer laser light (wavelength 193 nm) and F ₂ Vacuum ultraviolet light (VUV) such as laser light (wavelength 157 nm) is used.
[0012]
The mask stage MST supports the mask M, and is capable of two-dimensional movement and minute rotation in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in an XY plane. The mask stage MST is driven by a mask stage driving unit MSTD such as a linear motor, and the mask stage driving unit MSTD is controlled by a control unit CONT that controls the overall operation of the exposure apparatus. The control device CONT moves the mask stage MST supporting the mask M in the + X direction at a predetermined speed (synchronous moving speed, scanning speed) V via the mask stage driving unit MSTD. Further, the position of mask stage MST in the XY plane is detected by a laser interferometer (not shown). The detection result of the laser interferometer is output to the control unit CONT, and the control unit CONT controls the position of the mask stage MST supporting the mask M based on the detection result of the laser interferometer.
[0013]
The projection optical system PL is composed of a plurality of optical elements (lenses), and these optical elements are supported by a lens barrel. The projection optical system PL projects the pattern of the mask M onto the photosensitive substrate P, and the projection magnification from the mask M onto the photosensitive substrate P is set to 1 / N. In the present embodiment, the projection optical system PL is a reduction system with a projection magnification of 1/4 or 1/5. Note that the projection optical system PL may be either a unity magnification system or an enlargement system. Further, the projection optical system PL has an imaging characteristic control device (not shown) for correcting optical characteristics. The imaging characteristic control device adjusts the distance between some of the lens units constituting the projection optical system PL and the gas pressure in the lens chamber of some of the lens units, for example, to thereby increase the projection magnification of the projection optical system PL. And optical characteristics such as distortion. The imaging characteristic control device is controlled by the control device CONT.
[0014]
The substrate stage PST supports the photosensitive substrate P, and is two-dimensionally movable in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in an XY plane. Further, the substrate stage PST is provided so as to be movable in the Z-axis direction, and is also provided so as to be movable in the θZ direction, the θX direction, and the θY direction. The substrate stage PST is driven by a substrate stage drive unit PSTD such as a linear motor, and the drive unit PSTD is controlled by a control unit CONT that controls the overall operation of the exposure apparatus. The control device CONT moves the substrate stage PST supporting the photosensitive substrate P in the -X direction at a predetermined speed V / N via the substrate stage driving unit PSTD. The position of the substrate stage PST in the XY plane is detected by a laser interferometer (not shown). Further, the position of the photosensitive substrate P supported on the substrate stage PST in the Z-axis direction is detected by a focus position detection system (not shown). The detection results of the laser interferometer and the focus position detection system are output to the control device CONT, and the control device CONT controls the position of the substrate stage PST supporting the photosensitive substrate P based on the detection results of the laser interferometer and the focus position detection system. Do.
[0015]
The exposure apparatus EX includes a blind (illumination area setting device) 4 for setting an illumination area of the exposure light EL on the mask M. The blind 4 is fixed to a predetermined member such as a housing (barrel) of the illumination optical system IL. The blind 4 is arranged at a position conjugate with the mask M supported by the mask stage MST on the optical path of the illumination optical system IL. The blind 4 is formed in a plate shape. In the present embodiment, the blind 4 is arranged so that the plate surface of the blind 4 matches the XY plane, that is, the mask M and the blind 4 are parallel to each other.
[0016]
FIG. 2 is a view showing the blind 4. As shown in FIG. 2, the blind 4 has a plurality of openings 4A and 4B through which the exposure light EL passes. In the present embodiment, the blind 4 has two openings 4A and 4B. Each of the openings 4A and 4B is formed in a rectangular slit shape whose longitudinal direction is the Y-axis direction. The blind 4 includes shutters 5A and 5B for adjusting the size of the opening 4A, and shutters 5C and 5D for adjusting the size of the opening 4B. Each of the shutters 5A and 5B is arranged along the longitudinal direction of the opening 4A, and is independently movable to slide with respect to the blind 4 by an actuator (not shown) in the X-axis direction in the figure. The amount of movement of each of the shutters 5A and 5B is independently controlled by the control device CONT via an actuator. The control device CONT can adjust the size (width, size in the X-axis direction) of the opening 4A by controlling the amount of movement of the shutters 5A and 5B, that is, the position of the shutters 5A and 5B with respect to the blind 4. ing. Further, the control device CONT can adjust the position of the opening 4A with respect to the reference position (for example, the edge E of the blind 4) by controlling the position of each of the shutters 5A and 5B.
Here, each of the edge portions of the shutters 5A and 5B is formed in a straight line. Then, each of the shutters 5A and 5B moves in a direction approaching the center of the opening 4A and abuts (or overlaps by a predetermined amount) the edges thereof, thereby closing the opening 4A. On the other hand, when each of the shutters 5A and 5B moves away from the center of the opening 4A, the opening 4A is opened.
[0017]
Similarly, the amount of movement of each of the shutters 5C and 5D is independently controlled by the control device CONT via an actuator (not shown), and the control device CONT controls the positions of the shutters 5C and 5D. Thereby, the size (width) of the opening 4B is adjusted, and the position of the opening 4B with respect to the reference position is adjusted.
[0018]
The exposure light EL that has passed through the openings 4A and 4B of the blind 4 adjusted by the shutters 5A to 5D becomes a light beam having a rectangular slit-shaped cross section, and the pattern formation area on the mask M is an illumination area set by the blind 4 Illuminated by The blind 4 shapes the illumination area on the mask M by the exposure light EL into a rectangular slit shape, and the mask M illuminates the slit illumination area with the exposure light EL.
[0019]
FIG. 3 is a diagram showing the mask M illuminated with the exposure light EL.
As shown in FIG. 3, the mask M is disposed at the center of the mask M, and includes a pattern forming area PA having a pattern to be transferred to the photosensitive substrate P and a non-pattern set around the pattern forming area PA. And an area PC. Further, a light-shielding region PB made of a light-shielding material such as chrome is provided between the pattern forming region PA and the non-pattern region PC. The light shielding area PB of the mask M does not allow the illuminated exposure light EL to pass through.
[0020]
The mask M illuminates the illumination area 6A set by the opening 4A of the blind 4 and the illumination area 6B set by the opening 4B of the blind 4 with exposure light EL. Each of the illumination areas 6A and 6B is shaped into a rectangular slit by the openings 4A and 4B of the blind 4. The blind 4 is arranged so that the longitudinal direction of each of the illumination areas 6A and 6B coincides with the Y-axis direction (non-scanning direction), and the illumination areas 6A and 6B are arranged in the X-axis direction (scanning direction). , These illumination areas 6A and 6B are set.
[0021]
Here, the blind 4 sets the illumination regions 6A and 6B such that the end portions of the illumination regions 6A and 6B in the Y-axis direction and the light shielding region PB of the mask M overlap by a predetermined amount. By setting the end portions of the illumination regions 6A and 6B in the Y-axis direction so as to overlap the light shielding region PB of the mask M by a predetermined amount, the blind 4 has a size (Y) in the longitudinal direction of each of the openings 4A and 4B. Even without providing a shutter for adjusting the size in the axial direction), only the pattern forming area PA can be illuminated without illuminating the non-pattern area PC.
[0022]
By driving each of the shutters 5A to 5D of the blind 4, the control device CONT can adjust the sizes (widths) L1 and L2 of the illumination regions 6A and 6B in the X-axis direction, and can adjust the illumination regions 6A and 6B. The distance L3 between 6B can be adjusted. For example, when adjusting the width L1 of the illumination area 6A, the control device CONT adjusts the position of the shutter 5B (5A) with respect to the shutter 5A (5B). Similarly, when adjusting the width L2 of the illumination area 6B, the control device CONT adjusts the position of the shutter 5D (5C) with respect to the shutter 5C (5D). When adjusting the interval L3 between the illumination areas 6A and 6B, the control device CONT moves the shutters 5A and 5B in the same direction, for example, while maintaining the relative position (the size of the opening 4A) of the shutters 5A and 5B. Moving. As described above, the size (width) of each of the illumination regions 6A and 6B and the interval between the illumination regions 6A and 6B can be adjusted by the blind 4. Further, by driving the shutters 5A to 5D, the optical path of the exposure light EL corresponding to the illumination areas 6A and 6B is shielded / opened, whereby the number of illumination areas can be adjusted.
[0023]
Here, the blind 4 is provided with a detection device including, for example, an encoder that can detect a position of each of the shutters 5A to 5D with respect to a reference position (for example, an edge E of the blind 4). The control device CONT adjusts the sizes and positions of the openings 4A and 4B using the shutters 5A to 5D based on the detection result of the detection device, thereby obtaining the sizes and positions of the illumination regions 6A and 6B on the mask M. (Interval) is adjustable.
[0024]
In the present embodiment, the width L1 and the width L2 are set to the same value. The two illumination regions 6A and 6B arranged in the X-axis direction are parallel to each other, and have a central portion x0 and a + X-side end portion (− + of the + X-side light shielding region PB) in the X-axis direction of the pattern formation region PA of the mask M. The distance L4 from the (X side edge) x1 and the center of the illumination area 6A set on the −X side in the X-axis direction and −X of the illumination area 6B set on the + X side with respect to the illumination area 6A. The distance L5 from the side edge is set to the same value. That is, the size L0 = 2 × L4 of the pattern formation area PA in the X-axis direction, and the distance L4 = L5 = L3−1 / 2 × L1. Therefore, when the width L1 (L2) is sufficiently small, the interval L3 between the illumination regions 6A and 6B is set to approximately 1/2 of the size L0 of the pattern formation region PA.
[0025]
A method of exposing the pattern of the mask M to the photosensitive substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to FIG.
As shown in FIG. 4A, for a mask M that moves at a constant speed in the + X direction at a speed V, the control device CONT controls the −X side edge of the illumination area 6B and + X of the pattern formation area PA of the mask M. The luminous flux from the light source 1 at the time when the side edge (the −X side edge of the + X side light-blocking area PB) x1 coincides, in other words, immediately before the illumination area 6B is arranged in the pattern formation area PA. Is started, and illumination of the exposure light EL on the mask M is started. At this time, the center of the illumination area 6A in the X-axis direction and the center x0 of the pattern formation area PA in the X-axis direction match. Here, since the position of the mask M is detected by the laser interferometer, the control device CONT can determine the position of the mask M based on the detection result of the laser interferometer. In addition, since the positions of the illumination areas 6A and 6B on the mask M are uniquely set in advance by the blind 4, the control device CONT determines the detection result of the laser interferometer and the illumination areas 6A and 6B that have been obtained in advance. The position of the mask M when the -X side edge of the illumination area 6B coincides with the edge x1 of the light shielding area PB of the mask M that moves at a constant speed can be obtained based on the position information.
[0026]
Then, as shown in FIG. 4B, while moving at a constant speed in the + X direction, the mask M is illuminated with the exposure light EL based on the illumination areas 6A and 6B. The pattern of the mask M illuminated with the exposure light EL is transferred to the photosensitive substrate P moving at a constant speed in the -X direction via the projection optical system PL.
[0027]
As shown in FIG. 4C, when the + X side edge of the illumination area 6A and the −X side edge (+ X side edge of the −X side light shielding area PB) x2 of the pattern formation area PA coincide with each other, In other words, when the illumination area 6A has retreated from the pattern formation area PA, the control device CONT stops emitting the light beam from the light source 1 and ends the illumination of the exposure light EL on the mask M. At this time, the center of the illumination area 6B in the X-axis direction matches the center of the mask M in the X-axis direction. The exposure apparatus EX can complete one scanning exposure with a shorter scanning distance than the exposure processing in one illumination area. In the present embodiment, the interval L3 between the illumination areas 6A and 6B is set to approximately １ ／ of the size L0 in the scanning direction of the pattern formation area PA. One scanning exposure can be completed at a scanning distance of about 1/2.
[0028]
FIG. 5 is a diagram showing the relationship between the position of the pattern forming area PA of the mask M in the X-axis direction and the light amount (dose amount) of the exposure light EL illuminated in the illumination areas 6A and 6B. The position of the formation area PA in the X-axis direction, the vertical axis of the upper graph is the light quantity based on the illumination area 6A, and the vertical axis of the lower graph is the light quantity based on the illumination area 6B. As shown in this figure, the exposure light EL of the illumination area 6A illuminates the area of the position x0 to x2 with respect to the pattern formation area PA of the mask M that moves at a constant speed V in the X-axis direction. In the vicinity of the position x0, the light amount is gradually increased from 0 toward the −X side. This increase area corresponds to the width L1 of the illumination area 6A. Then, the light amount in the pattern forming area PA on the −X side from the increase area becomes uniform. On the other hand, the exposure light EL in the illumination area 6B illuminates the area of the positions x1 to x0, and gradually reduces the light amount from 0 toward −X side near the position x0 which is the exposure end point. This reduced area corresponds to the width L2 of the illumination area 6B. The light amount in the pattern forming area PA on the + X side of the reduced area is uniform. Since the width L2 of the reduced area of the illumination area 6B matches the increased area L1 of the illumination area 6A, a uniform light quantity can be obtained in the entire pattern formation area PA by overlapping these respective light quantities.
[0029]
Then, the widths L1 and L2 of the illumination regions 6A and 6B are set to the same value, the distance L4 between the central portion x0 of the pattern forming region PA and the + X side edge portion x1, and the central portion of the illumination region 6A in the X-axis direction. And the distance L5 between the illumination area 6B and the −X side edge are set to the same value, so that the pattern formation area PA can be scanned once and without driving the shutters 5A to 5D during scanning. The entire area can be illuminated with a uniform amount of light.
[0030]
As described above, since the plurality of illumination areas of the exposure light EL on the mask M are set in the scanning direction by the blinds 4 and the shutters 5A to 5D, the pattern formation area PA of the mask M is formed by one illumination area as in the related art. , The pattern formation area PA may be divided into positions x1 to x0 and x0 to x2 for illumination in each of the plurality of illumination areas 6A and 6B. The entire area of the formation area PA can be illuminated.
[0031]
The distance L4 between the central portion x0 of the pattern formation region PA and the + X side edge portion x1 is the same as the distance L5 between the central portion in the X-axis direction of the illumination region 6A and the -X side edge portion of the illumination region 6B. Since the number of illumination areas and the interval between the illumination areas are set according to the size of the pattern formation area PA in the scanning direction, the shutters 5A to 5D are not driven once during scanning. With the scanning, the entire area of the pattern formation area PA can be illuminated with a uniform light amount. In this way, by setting the optimal number and interval of the illumination areas according to the size of the pattern formation area PA, it is possible to perform the exposure processing with high efficiency and high efficiency.
[0032]
In the above embodiment, the distance L4 between the center x0 of the pattern formation area PA and the + X side edge x1 and the distance between the center of the illumination area 6A in the X-axis direction and the −X side edge of the illumination area 6B. L5 is set to the same value, but may be different. When the distance L5 is shorter than the distance L4, the illumination area 6B illuminates the pattern formation area PA already illuminated in the illumination area 6A before illuminating the vicinity of the central portion x0 of the mask M in the X-axis direction. For example, if the light path corresponding to the illumination area 6B is blocked by the shutters 5C and 5D so that illumination in the illumination area 6B is not performed, the entire area of the pattern formation area PA can be illuminated with a uniform light amount. On the other hand, when the distance L5 is longer than the distance L4, the illumination area 6A comes out of the pattern formation area PA before the illumination area 6B illuminates the vicinity of the central portion x0 of the mask M in the X-axis direction. After exiting from the formation area PA, the light path corresponding to the illumination area 6A is blocked by the shutters 5A and 5B during illumination in the illumination area 6B, and the illumination area 6B is further illuminated to the -X side from the central portion x0. Thereby, the entire area of the pattern formation area PA can be illuminated with a uniform light amount.
As described above, the illumination operation of the exposure light EL on the mask M is controlled such that the light amount of the overlapping portion in the pattern formation region between the different illumination regions and the light amount of the portion other than the overlapping portion substantially match.
[0033]
In the above-described embodiment, the widths L1 and L2 of the illumination areas 6A and 6B are set to the same value, and the values are fixed during scanning. The scanning exposure may be performed while driving each of the 5Ds and changing the values of the widths L1 and L2. This makes it possible to adjust the dose of the mask M (or the photosensitive substrate P) in the scanning direction.
[0034]
In the above embodiment, the blind 4 has been described as having two openings 4A and 4B. However, as shown in FIG. 6, the blind 4 may have three openings 4A, 4B and 4C. Here, the opening 4A is provided with shutters 5A and 5B, the opening 4B is provided with shutters 5C and 5D, and the opening 4C is provided with shutters 5E and 5F. By adjusting the positions of the shutters 5A to 5F, as shown in FIG. 7, the illumination areas 6A to 6C on the mask M corresponding to the openings 4A to 4C respectively move in the scanning direction. A plurality is set at equal intervals. By setting the widths of the plurality of illumination areas 6A to 6C to the same value and arranging the illumination areas 6A to 6C at equal intervals, the entire area of the pattern formation area PA can be efficiently illuminated by one scan. it can. 7A schematically shows the positions of the illumination areas 6A to 6C at the time when the exposure light EL starts illuminating the pattern formation area PA of the mask M, and FIG. The positions of the illumination areas 6A to 6C at the end of the illumination of the light EL are schematically shown.
[0035]
Here, in order to illuminate the entire area of the pattern formation area PA with a uniform amount of light in one scan using a plurality of illumination areas, the size of the pattern formation area PA in the scanning direction is L0, and the number of illumination areas is Ns. When the width of one illumination area is L1, the interval L3 between the illumination areas is
L3 = (L0 + L1) / Ns
Should be set so as to satisfy the following condition. When the width L1 is sufficiently small, L3 = L0 / Ns. Therefore, in the example shown in FIG. 7, since Ns = 3, it is desirable that the interval L3 between the illumination regions 6A to 6C is L3 = (L0 + L1) / 3 (when the width L1 is sufficiently small, L3 = L0 / 3). .
As described above, by setting the number Ns of the illumination areas having the width L1 and the interval L3 between the illumination areas according to the size L0 of the pattern formation area PA in the scanning direction, scanning exposure can be performed efficiently. it can.
It is needless to say that the number of illumination areas may be any number of three or more.
[0036]
In the above embodiment, the shutters are used to adjust the interval between the illumination areas. However, the blind is formed with a large number of small openings, and the openings can be opened and closed at each of these openings. By providing a shutter and closing an arbitrary one of the plurality of openings with the shutter, it is possible to adjust the interval between the open openings, that is, the interval between the illumination regions.
[0037]
In each of the above embodiments, the adjustment of the number, width, or interval of the illumination areas has been described using the shutter. However, a plurality of blinds having different numbers, widths, or intervals of the apertures are used for the illumination optical system IL. These blinds may be exchanged according to the size of the pattern formation area PA of the mask M supported by the mask stage MST.
[0038]
Next, a second embodiment of the exposure apparatus of the present invention will be described with reference to FIGS. Here, in the following description, the description of the same or equivalent components as those in the first embodiment will be simplified or omitted.
An exposure apparatus EX shown in FIG. 8 includes an illumination optical system IL that illuminates a mask M supported by a mask stage MST with exposure light EL, and a pattern of the mask M illuminated with the exposure light EL supported by a substrate stage PST. And a projection optical system PL for projecting the light on the photosensitive substrate P. The illumination optical system IL is provided with an illumination area setting device 10 for setting an illumination area of the exposure light EL with respect to the mask M. The illumination area setting device 10 includes a blind 4 having an opening 4A through which the exposure light EL passes, and a blind stage 11 movably supporting the blind 4. The blind 4 is movable in the X-axis direction while being supported by the blind stage 11. In the present embodiment, similarly to the first embodiment, the illumination area setting device 10 is arranged on the optical path of the illumination optical system IL such that the plate surface of the blind 4 and the XY plane match.
[0039]
9 and 10 are views showing the illumination area setting device 10, in which FIG. 9 is a view from the -Z side, and FIG. 10 is a view from the -X side.
As shown in this figure, the illumination area setting device 10 includes a blind stage 11 and a blind 4 supported by the blind stage 11 so as to be movable in the X-axis direction. The blind stage 11 is fixed to a predetermined member such as a housing of the illumination optical system IL.
As shown in FIG. 9, the blind 4 has an opening 4A through which the exposure light EL passes. The opening 4A is formed in a rectangular slit shape whose longitudinal direction is the Y-axis direction. In addition, an opening 11A that allows the exposure light EL to pass therethrough is also formed in the center of the blind stage 11. The exposure light EL that has passed through the opening 4A of the blind 4 illuminates the mask M after passing through the opening 11A of the blind stage 11. Here, the size (width) of the opening 11A of the blind stage 11 in the X-axis direction (scanning direction) is sufficiently larger than the width of the opening 4A of the blind 4 in the X-axis direction, and the Y-axis direction of the opening 11A. The width in the (non-scanning direction) is smaller than the width of the opening 4A in the Y-axis direction. Therefore, the width of the illumination area on the mask M in the X-axis direction (scanning direction) is defined by the size of the opening 4A, and the width of the illumination area in the Y-axis direction (non-scanning direction) is the size of the opening 11A. Stipulated by
[0040]
As shown in FIG. 10, the blind stage 11 includes a pair of linear motors (moving devices) 12, 12. The linear motor 12 includes a stator 12A supported on the blind stage 11 and extending in the X-axis direction, and a movable element 12B provided corresponding to the stator 12A and fixed to the blind 4. The blind 4 can be moved on the blind stage 11 in the X-axis direction (scanning direction) by driving a linear motor 12. The drive of the linear motor 12 is controlled by the control device CONT.
[0041]
A pair of recesses 13B, 13B are provided on the lower surface of the blind 4, and guide portions 13A, 13A extending in the X-axis direction are provided on the blind stage 11 so as to correspond to the recesses 13B. An air bearing 14, which is a non-contact bearing, is provided between the guide 13A and the recess 13B. The blind stage 11 supports the blind 4 in a non-contact manner with a predetermined clearance by an air bearing 14. The blind 4 moves in the X-axis direction while being guided by the guide portion 13A by the linear motor 12 while being supported by the blind stage 11 in a non-contact manner.
[0042]
The blind stage 11 includes a position detecting device 15 configured to detect the position of the blind 4, for example, an encoder. The position detection device 15 detects the position of the blind 4 with respect to the blind stage 11, and outputs a position detection result to the control device CONT. The control device CONT drives the linear motor 12 based on the position detection result of the blind 4 by the position detection device 15, and moves the blind 4 to a predetermined position.
[0043]
Next, a method of scanning and exposing the pattern of the mask M on the photosensitive substrate P using the above-described exposure apparatus EX will be described with reference to FIG. FIG. 11 is a diagram schematically showing a mask M that scans in the + X direction and a blind 4 that moves in the −X direction with respect to the mask M to be scanned.
As shown in FIG. 11A, when performing the scanning exposure, the blind stage is so arranged that the + X side edge of the mask M (pattern forming area PA) supported by the mask stage MST can be illuminated with the exposure light EL. The position of the blind 4 supported by 11 is set.
Then, as shown in FIG. 11B, the control device CONT moves the mask M supported on the mask stage MST at a constant speed V in the + X direction, and moves the blind 4 supported on the blind stage 11 It moves at a constant speed Vb in the -X direction. That is, the control device CONT moves the illumination region set by the illumination region setting device 10 in the direction opposite to the moving direction of the mask M by driving the linear motor (moving device) 12. The control device CONT moves the blind 4 at a desired speed by driving the linear motor 12 while obtaining the speed of the blind 4 based on the position information of the blind 4 by the position detection device 15.
Then, as shown in FIG. 11C, when the illumination area set by the moving blind 4 reaches the −X side edge of the mask M (pattern formation area PA), one scanning exposure is completed. I do.
[0044]
As described above, by moving the blind 4, the illumination area is moved in the direction opposite to the moving direction of the mask M, so that the scanning speed V of the mask stage MST supporting the mask M does not need to be increased. Since the relative speed of the mask M with respect to the illumination area can be increased to (V + Vb), the entire area of the pattern formation area PA of the mask M can be illuminated in a short time in the illumination area. Since it is not necessary to increase the speed (and acceleration) of the mask stage MST, it is possible to suppress the generation of vibration and heat due to the increase in speed (increase in acceleration) of the mask stage MST, and to efficiently perform accurate exposure processing. Can be. In this case, since the blind 4 is sufficiently lighter than the mask stage MST, the vibration level generated by moving the blind 4 is sufficiently smaller than the vibration level generated by increasing the speed of the mask stage MST.
[0045]
In the above-described embodiment, the mask stage MST is moved while the blind 4 is moved. However, only the blind 4 may be moved without moving the mask stage MST. Such a configuration is effective for irradiating exposure light to a mask having a small pattern formation region, and eliminates the need for a mask stage driving unit. Therefore, simplification of the device configuration and reduction of vibration sources are realized.
[0046]
In the above embodiment, the illumination area with respect to the mask M is moved by moving the blind 4. For example, as shown by a broken line in FIG. 8, the exposure is performed by moving the position of the deflecting mirror 3a (or 3b). The optical path of the light EL may be moved. Alternatively, the optical path of the exposure light EL may be moved by tilting the deflection mirror 3a (3b).
[0047]
Note that the shutters 5A and 5B described in the first embodiment may be provided in the opening 4A of the blind 4 in the second embodiment, and the size of the opening 4A may be variable.
[0048]
The application of the exposure apparatus EX of each of the above embodiments is not limited to an exposure apparatus for manufacturing a semiconductor or an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern to a square glass plate. It can be widely applied to an exposure apparatus for manufacturing the same.
[0049]
When far ultraviolet rays such as an excimer laser are used as the projection optical system PL, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material. ₂ When a laser or X-ray is used, a catadioptric or refractive optical system is used (a mask of a reflective type is used). When an electron beam is used, an electron system including an electron lens and a deflector is used as the optical system. An optical system may be used. It goes without saying that the optical path through which the electron beam passes is set in a vacuum state.
[0050]
When a linear motor is used for the substrate stage PST or the mask stage PSMST, any of an air levitation type using an air bearing and a magnetic levitation type using Lorentz force or reactance force may be used. Further, the stage may be of a type that moves along a guide, or may be a guideless type in which a guide is not provided.
[0051]
When a plane motor is used as a stage driving device, one of a magnet unit (permanent magnet) and an armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the stage moving surface side (base). May be provided.
[0052]
The reaction force generated by the movement of the substrate stage PST may be mechanically released to the floor (ground) by using a frame member as described in Japanese Patent Application Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having such a structure.
[0053]
The reaction force generated by the movement of the mask stage MST may be mechanically released to the floor (ground) using a frame member as described in JP-A-8-330224. The present invention is also applicable to an exposure apparatus having such a structure.
[0054]
As described above, the exposure apparatus EX of the present embodiment controls the various subsystems including the components described in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electric systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from the various subsystems includes mechanical connection, wiring connection of an electric circuit, and piping connection of a pneumatic circuit among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the exposure apparatus be manufactured in a clean room in which the temperature, the degree of cleanliness, and the like are controlled.
[0055]
As shown in FIG. 12, in a semiconductor device, a step 201 for designing the function and performance of the device, a step 202 for manufacturing a mask (reticle) based on the design step, a substrate (wafer, glass plate ), A substrate processing step 204 of exposing the pattern of the mask M to the photosensitive substrate P by the exposure apparatus of the above-described embodiment, a device assembling step (including a dicing step, a bonding step, and a package step) 205, and an inspection step. 206 and the like.
[0056]
【The invention's effect】
As described above, according to the present invention, the entire area of the pattern formation region of the mask can be illuminated in a short time without increasing the scanning speed of the mask stage. Accurate exposure processing can be performed efficiently.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a first embodiment of an exposure apparatus of the present invention.
FIG. 2 is a schematic perspective view showing a first embodiment of an illumination area setting device.
FIG. 3 is a plan view showing a mask illuminated in an illumination area.
FIG. 4 is a diagram illustrating a procedure of an exposure process.
FIG. 5 is a diagram illustrating a relationship between the light amounts of a plurality of illumination areas and positions on a mask.
FIG. 6 is a schematic perspective view showing another embodiment of the illumination area setting device.
FIG. 7 is a plan view showing a mask illuminated in an illumination area.
FIG. 8 is a schematic configuration diagram showing a second embodiment of the exposure apparatus of the present invention.
FIG. 9 is a schematic perspective view showing a second embodiment of the illumination area setting device.
FIG. 10 is a side view of FIG. 9;
FIG. 11 is a diagram illustrating a procedure of an exposure process.
FIG. 12 is a flowchart illustrating an example of a semiconductor device manufacturing process.
[Explanation of symbols]
4 Blinds (lighting area setting device)
4A, 4B, 4C opening
5A-5F shutter
6A, 6B, 6C Illumination area
10 Lighting area setting device
11 Blind stage
12 Linear motor (moving device)
14. Air bearing (non-contact bearing)
15 Position detection device
EL exposure light
EX exposure equipment
M mask
P Photosensitive substrate (substrate)
PA pattern formation area

Claims (8)

An exposure apparatus that illuminates the mask with exposure light while synchronously moving a mask and a substrate having a pattern formation region where a pattern is formed, and transfers the pattern of the mask to the substrate.
An illumination area setting device configured to set a plurality of illumination areas of the exposure light with respect to the mask at equal intervals in a moving direction of the mask,
An exposure apparatus, wherein the illumination area setting device sets the number of the illumination areas and an interval between the illumination areas according to the size of the pattern forming area in the moving direction. The exposure apparatus according to claim 1, further comprising a shutter capable of blocking and opening an optical path corresponding to each of the plurality of illumination regions. 3. The exposure apparatus according to claim 1, wherein the illumination area setting device can change the interval. The exposure apparatus according to claim 1, wherein the illumination area setting device is capable of changing a size of the illumination area. An exposure apparatus that illuminates the mask with exposure light while synchronously moving the mask and the substrate, and transfers a pattern formed on the mask to the substrate.
An illumination area setting device that sets an illumination area of the exposure light with respect to the mask,
An exposure apparatus, comprising: a moving device that moves the illumination area set by the illumination area setting device in a direction opposite to a moving direction of the mask. The illumination area setting device, a blind having an opening through which exposure light passes,
The exposure apparatus according to claim 5, further comprising a blind stage that movably supports the blind. A non-contact bearing that supports the blind in a non-contact manner,
The exposure apparatus according to claim 6, further comprising a linear motor that moves the blind supported by the non-contact bearing. The exposure apparatus according to claim 6, further comprising a position detection device that detects a position of the moving blind.

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