JP2004103269A - Manufacture method for organic electroluminescence display device - Google Patents

Manufacture method for organic electroluminescence display device Download PDF

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Publication number
JP2004103269A
JP2004103269A JP2002259650A JP2002259650A JP2004103269A JP 2004103269 A JP2004103269 A JP 2004103269A JP 2002259650 A JP2002259650 A JP 2002259650A JP 2002259650 A JP2002259650 A JP 2002259650A JP 2004103269 A JP2004103269 A JP 2004103269A
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organic
evaporation
deposition beam
shadow mask
display device
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JP2002259650A
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Japanese (ja)
Inventor
Kiyoshi Yoneda
米田　清
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP2002259650A priority Critical patent/JP2004103269A/en
Priority to TW092120183A priority patent/TWI252706B/en
Priority to US10/653,420 priority patent/US20040115338A1/en
Priority to CNA03156349XA priority patent/CN1489419A/en
Priority to KR1020030061682A priority patent/KR100545975B1/en
Publication of JP2004103269A publication Critical patent/JP2004103269A/en
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  • Physical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To make the thickness of a film of an organic electroluminescence material layer to be uniform, and to improve the precision of its pattern formation. <P>SOLUTION: An insulating substrate 100 is installed in a vacuum chamber and a shadow mask 101 is installed to face the insulating substrate 100 in a close proximity to it. A plurality of openings 102 are formed, corresponding to the pattern of each organic electroluminescence material layer in the shadow mask 101. A depositing beam generator 50 is installed facing the shadow mask 101. The organic electroluminescence material in a molten state and stored in a pooling part 51 of the depositing beam generator 50 is evaporated, and depositing beam 200 is discharged from the depositing beam discharge hole 52. Then, the depositing beam 200 is passed through a depositing beam passage hole 71 on a depositing beam direction adjusting plate 70 and discharged in the direction of the shadow mask 101 as depositing beam with improved orientation. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、有機ＥＬ表示装置の製造方法に関し、特に有機ＥＬ材料の蒸着工程を含む有機ＥＬ表示装置の製造方法に関する。
【０００２】
【従来の技術】
近年、有機エレクトロルミネッセンス（Ｅｌｅｃｔｒｏ　Ｌｕｍｉｎｅｓｃｅｎｃｅ：以下、「有機ＥＬ」と称する。）素子を用いた有機ＥＬ表示装置が、ＣＲＴやＬＣＤに代わる表示装置として注目されており、例えば、その有機ＥＬ素子を駆動させるスイッチング素子として薄膜トランジスタ（Ｔｈｉｎ　Ｆｉｌｍ　Ｔｒａｎｓｉｓｔｏｒ：以下「ＴＦＴ」と称する。）を備えた有機ＥＬ表示装置の研究開発も進められている。
【０００３】
図６に従来の有機ＥＬ表示装置の一表示画素の断面図を示す。この表示画素はゲート電極１１を有するゲート信号線と、ドレイン信号線（不図示）との交点付近に有機ＥＬ素子駆動用のＴＦＴを備えている。そのＴＦＴのドレインはドレイン信号線に接続されており、またゲート電極１１はゲート信号線（不図示）に接続されており、更にソース１３ｓはＥＬ素子の陽極６１に接続されている。実際のＥＬ表示装置では、この画素が多数個、マトリックス状に配置され表示領域を構成している。以下で、この有機ＥＬ表示装置の製造方法について説明する。
【０００４】
表示画素は、ガラスや合成樹脂などから成る透明な絶縁性基板１０上に、ＴＦＴ及び有機ＥＬ素子を順に積層形成して成るものである。まず、絶縁性基板１０上にクロム（Ｃｒ）等の高融点金属から成るゲート電極１１を形成し、その上にゲート絶縁膜１２、及びｐ−Ｓｉ膜からなる能動層１３を順に形成する。
【０００５】
能動層１３には、ゲート電極１１上方のチャネル１３ｃと、このチャネル１３ｃの両側に、チャネル１３ｃ上のストッパ絶縁膜１４をマスクにしてイオンドーピングし更にゲート電極１１の両側をレジストにてカバーしてイオンドーピングしてゲート電極１１の両側に低濃度領域とその外側に高濃度領域のソース１３ｓ及びドレイン１３ｄが形成される。
【０００６】
そして、ゲート絶縁膜１２、能動層１３及びストッパ絶縁膜１４上の全面に、ＳｉＯ２膜、ＳｉＮ膜及びＳｉＯ２膜の順に積層された層間絶縁膜１５を形成し、ドレイン１３ｄに対応して設けたコンタクトホールにＡｌ等の金属を充填してドレイン電極１６を形成する。更に全面に例えば有機樹脂から成り表面を平坦にする平坦化絶縁膜１７を形成する。
【０００７】
そして、その平坦化絶縁膜１７のソース１３ｓに対応した位置にコンタクトホールを形成し、このコンタクトホールを介してソース１３ｓとコンタクトしたＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）から成るソース電極を兼ねた、陽極６１を平坦化絶縁膜１７上に形成する。陽極６１はＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）等の透明電極から成る。この陽極６１の上に有機ＥＬ素子６０を形成する。
【０００８】
有機ＥＬ素子６０は、一般的な構造であり、陽極６１、ＭＴＤＡＴＡ（４，４−ｂｉｓ（３−ｍｅｔｈｙｌｐｈｅｎｙｌｐｈｅｎｙｌａｍｉｎｏ）ｂｉｐｈｅｎｙｌ）から成る第１ホール輸送層、ＴＰＤ（４，４，４−ｔｒｉｓ（３−ｍｅｔｈｙｌｐｈｅｎｙｌｐｈｅｎｙｌａｍｉｎｏ）ｔｒｉｐｈｅｎｙｌａｎｉｎｅ）からなる第２ホール輸送層から成るホール輸送層６２、キナクリドン（Ｑｕｉｎａｃｒｉｄｏｎｅ）誘導体を含むＢｅｂｑ２（１０−ベンゾ〔ｈ〕キノリノール−ベリリウム錯体）から成る発光層６３、及びＢｅｂｑ２から成る電子輸送層６４、マグネシウム・インジウム合金もしくはアルミニウム、もしくはアルミニウム合金から成る陰極６５が、この順番で積層形成された構造である。
【０００９】
有機ＥＬ素子６０は、上記の有機ＥＬ素子駆動用のＴＦＴを介して供給される電流によって発光する。つまり、陽極６１から注入されたホールと、陰極６５から注入された電子とが発光層の内部で再結合し、発光層を形成する有機分子を励起して励起子が生じる。この励起子が放射失活する過程で発光層６３から光が放たれ、この光が透明な陽極６１から絶縁性基板１０を介して外部へ放出されて発光する。
【００１０】
上述した有機ＥＬ素子６０のホール輸送層６２、発光層６３、電子輸送層６４に用いられる有機ＥＬ材料は、耐溶剤性が低く、水分にも弱いという特性があるため、半導体プロセスにおけるフォトリソグラフィ技術を利用することができない。そこで、いわゆるシャドウマスクを用いた蒸着法により有機ＥＬ素子６０のホール輸送層６２、発光層６３、電子輸送層６４及び陰極６５のパターン形成を行っていた。
【００１１】
なお、関連する先行技術文献としては、以下の特許文献１がある。
【００１２】
【特許文献１】
特開平１１−２８３１８２号公報
【００１３】
【発明が解決しようとする課題】
上述のシャドウマスクを用いた蒸着法により、有機ＥＬ素子６０のパターン形成を行うに際して、図７（ａ）に示すように、シャドウマスク１０１は絶縁性基板１００の表面に近接させて配置される。これはシャドウマスク１０１を絶縁性基板１００に密着させると、その表面を損傷するおそれがあるためである。
【００１４】
そして、蒸着ビーム発生源（不図示）からの、有機ＥＬ材料を含む蒸着ビーム１０３が、シャドウマスク１０１に設けられた開口部１０２を通して、絶縁性基板１００に放射される。すると、図７（ｂ）に示すように、絶縁性基板１００の表面の開口部１０２に対応する領域に、有機ＥＬ材料が蒸着される。
【００１５】
しかしながら、蒸着ビームの指向性が低いと、図７（ａ）に示すように、いわゆるシャドウ効果により、シャドウマスク１０１の開口部１０２のエッジから斜めに蒸着ビームが入射する成分を生じ、開口部１０２より広がった領域に蒸着されてしまう。また、開口部１０２の中央部からエッジに向かうにしたがい、蒸着ビームの密度の低下が起こる。その結果、蒸着された有機ＥＬ材料層２０１は、図７（ｂ）に示すように、中央部では厚く、周辺部では薄くなり、不均一な層厚となってしまい、有機ＥＬ素子６０の特性に悪影響を及ぼすおそれがあった。
【００１６】
【課題を解決するための手段】
そこで、本発明は蒸着ビームの指向性を向上させることで、有機ＥＬ材料層の膜厚を均一化すること、及びそのパターン形成の精度を高めたものである。
【００１７】
すなわち、本発明は、真空チャンバー内に配置された被蒸着基板の表面に近接して蒸着マスクを配置し、蒸着ビーム発生源から有機ＥＬ材料を含む蒸着ビームを発生させ、この蒸着ビームを前記蒸着マスクの開口部に通し、前記基板の表面の所定領域に有機ＥＬ材料を蒸着する工程を含み、
前記蒸着ビーム発生源に対向して、複数の蒸着ビーム通過孔を有する蒸着ビーム方向調整板を配置し、前記蒸着ビーム発生源から発生された蒸着ビームは前記複数の蒸着ビーム通過孔を通して前記蒸着マスクに放射されることを特徴とする。
【００１８】
これにより、蒸着ビームの指向性を高め、有機ＥＬ材料層の膜厚をほぼ均一化することができる。
【００１９】
【発明の実施の形態】
次に、本発明の実施形態について図面を参照しながら詳細に説明する。図１は蒸着ビーム発生源５０及び前記蒸着ビーム発生源５０に対向して設けられた蒸着ビーム方向調整板７０の斜視図、図２は図１の断面図、図３は有機ＥＬ材料の蒸着工程を示す斜視図、図４は図３の断面図である。
【００２０】
本発明の有機ＥＬ表示装置の製造方法は、絶縁性基板１０を用意し、この絶縁性基板１０上に、有機ＥＬ素子駆動用のＴＦＴや有機ＥＬ素子６０を順次、形成していくが、有機ＥＬ素子６０の形成工程を除いては従来例で説明した工程と同様である。
【００２１】
有機ＥＬ素子６０を構成する、ホール輸送層６２、発光層６３、電子輸送層６４及び陰極６５は、シャドウマスク１０１を用いた蒸着法によりパターニングされる。
【００２２】
蒸着ビーム発生源５０は図１及び図２に示すように、所定形状の筐体の底部に有機ＥＬ材料の貯留部５１が設けられている。
【００２３】
貯留部５１にはヒーター５３が設けられ、貯留部５１に収納された有機ＥＬ材料を加熱して溶融状態にするように構成されている。貯留部５１の上方には、蒸着ビーム放射孔５２が複数個、筐体の長手方向に沿って一列に開口されている。蒸着ビームは、蒸着ビーム発生源５０に取り付けられた複数の蒸着ビーム放射孔５２から放射される。さらに、前記蒸着ビーム放射孔５２から放射された蒸着ビーム２００は、蒸着ビーム発生源５０上の蒸着ビーム放射孔５２に対向して設けられた、蒸着ビーム方向調整板７０上の複数の蒸着ビーム通過孔７１を通されることにより、指向性の高められた蒸着ビーム２１０となる。
【００２４】
蒸着ビーム放射孔５２の数と蒸着ビーム通過孔７１の数は一致していなくてもよい。また、蒸着ビーム通過孔７１は蒸着ビーム方向調整板７０から円筒をくり抜いた形状であることが好ましいが、これに限らず、角柱をくり抜いた形状であってもよい。
【００２５】
また、蒸着ビーム通過孔７１の径は、指向性を十分高めるために約０．１ｍｍ〜１ｍｍであることが好ましい。
【００２６】
また、蒸着ビーム方向調整板７０には、例えばヒーター（不図示）のような発熱体が取り付けられることで加熱されていることが好ましい。あるいは、蒸着ビーム方向調整板７０を発熱体で構成しても良い。これにより、蒸着ビーム方向調整板７０上の複数の蒸着ビーム通過孔７１を通過する蒸着ビーム２１０が加熱され、蒸着材料が蒸着ビーム通過孔７１に付着することが防止される。
【００２７】
図３及び図４に示すように、真空チャンバー内に、有機ＥＬ駆動用ＴＦＴ等が既に形成された絶縁性基板１００を配置し、この絶縁性基板１００に近接して対向するように、シャドウマスク１０１を配置する。
【００２８】
シャドウマスク１０１には、各有機ＥＬ材料層のパターンに対応して複数の開口部１０２が形成されている。そして、シャドウマスク１０１に対向して、上述した蒸着ビーム発生源５０を配置する。さらに、蒸着ビーム発生源５０に対向して複数の蒸着ビーム通過孔７１を具備する蒸着ビーム方向調整板７０を配置する。
【００２９】
そして、蒸着ビーム発生源５０の貯留部５１に収納され溶融状態の有機ＥＬ材料が蒸発し、蒸着ビーム放射孔５２から蒸着ビーム２００が放射される。さらに蒸着ビーム２００は、前記蒸着ビーム放射孔５２に対向して設けられた蒸着ビーム方向調整板７０上の蒸着ビーム通過孔７１を通過され、指向性の高められた蒸着ビーム２１０となってシャドウマスク１０１の方向へ放射される。そして、蒸着ビーム発生源５０及び蒸着ビーム方向調整板７０を、シャドウマスク１０１に対して同時に平行移動させることで、シャドウマスク１０１の全面に渡って、指向性の高められた蒸着ビーム２１０が照射される。これにより、各有機ＥＬ材料層のパターンが形成される。
【００３０】
なお、蒸着ビーム発生源５０及び蒸着ビーム方向調整板７０をシャドウマスク１０１に対して同時に平行移動させる際、図中では、蒸着ビーム発生源５０と蒸着ビーム方向調整板７０は非連結状態で同時に移動する例として図示したが、一体型として物理的に連結されていても良い。また、蒸着ビーム発生源５０及び蒸着ビーム方向調整板７０はシャドウマスク１０１に対して相対的に移動させればよいので、蒸着ビーム発生源５０及び蒸着ビーム方向調整板７０の位置を固定し、絶縁性基板１００及びシャドウマスク１０１を移動させても良い。
【００３１】
図５に、蒸着ビーム１０４がシャドウマスク１０１を通して絶縁性基板１００に照射されている様子を示す。図５（ａ）に示すように、すべての蒸着ビーム２１０の方向は、シャドウマスク１０１及び絶縁性基板１００に対して、ほぼ垂直に揃えられているので、シャドウ効果が無くなり、開口部１０２より広がった領域に蒸着されることが防止される。また、蒸着後の有機ＥＬ材料２０１の厚さは全体に渡って均一となる。
【００３２】
また、絶縁性基板１００に近接して対向するように、シャドウマスク１０１を配置する際には、所定間隔（例えば数十ミクロン）の距離を離すために、絶縁性基板１００とシャドウマスク１０１との間に複数のスペーサ１０５を設けると良い。これにより、絶縁性基板１００にシャドウマスク１０１が接触して、絶縁性基板１００の表面の膜や素子を損傷することが防止される。
【００３３】
また、有機ＥＬ材料層には、ホール輸送層６２、発光層６３、電子輸送層６４及び陰極６５というように、複数の層がある。そこで、例えば、１つの真空チャンバー内でホール輸送層６２を蒸着した後に、ホール輸送層６２が蒸着された絶縁性基板１００は別の真空チャンバーに移送され、そこで同様な工程を繰り返すことによって、ホール輸送層６２の上層の発光層６３が形成される。こうして、ホール輸送層６２、発光層６３、電子輸送層６４及び陰極６５が順次、積層形成され、有機ＥＬ素子６０が形成される。
【００３４】
なお、上記実施形態では、蒸着ビーム放射孔５２及び蒸着ビーム通過孔７１が複数個、筐体の長手方向に沿って一列に立設されてリニアソースを構成しているが、これに限らず、蒸着ビーム放射孔５２及び蒸着ビーム通過孔７１は行列状に配置しても良い。
【００３５】
【発明の効果】
本発明によれば、蒸着法を用いて有機ＥＬ素子を形成するに際して、蒸着ビームを、蒸着ビーム発生源に設けられた複数の蒸着ビーム放射孔と、前記蒸着ビーム放射孔に対向して設けられた複数の蒸着ビーム通過孔を通して放射しているので、蒸着ビームの指向性が向上し、有機ＥＬ材料層の膜厚を均一化すること、及びそのパターン形成の精度を高めることが可能になり、有機ＥＬ素子を組み込んだ有機ＥＬ表示装置の特性向上、歩留まり向上に寄与することができる。
【図面の簡単な説明】
【図１】本発明の実施形態に係る有機ＥＬ素子の製造方法に用いる蒸着ビーム発生源の斜視図である。
【図２】本発明の実施形態に係る有機ＥＬ素子の製造方法に用いる蒸着ビーム発生源の断面である。
【図３】本発明の実施形態に係る有機ＥＬ表示装置の製造方法を説明する図である。
【図４】本発明の実施形態に係る有機ＥＬ表示装置の製造方法を説明する図である。
【図５】本発明の実施形態に係る有機ＥＬ表示装置の製造方法を説明する図である。
【図６】有機ＥＬ表示装置の一表示画素の断面図である。
【図７】従来例に係る有機ＥＬ表示装置の製造方法を説明する図である。
【符号の説明】
５０　蒸着ビーム発生源　　５１　貯留部　　５２　蒸着ビーム放射孔
５３　ヒーター　　７０　蒸着ビーム方向調整板　　７１蒸着ビーム通過孔
１００　絶縁性基板　　１０１　シャドウマスク　　１０２　開口部
１０５　スペーサ　　　２００　蒸着ビーム
２１０　指向性が高められた蒸着ビーム[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing an organic EL display device, and more particularly to a method for manufacturing an organic EL display device including a step of depositing an organic EL material.
[0002]
[Prior art]
2. Description of the Related Art In recent years, an organic EL display device using an organic electroluminescence (Electro Luminescence: hereinafter, referred to as “organic EL”) element has attracted attention as a display device replacing a CRT or LCD. Research and development of an organic EL display device provided with a thin film transistor (hereinafter, referred to as “TFT”) as a switching element to be performed are also underway.
[0003]
FIG. 6 shows a sectional view of one display pixel of a conventional organic EL display device. This display pixel includes a TFT for driving an organic EL element near an intersection of a gate signal line having a gate electrode 11 and a drain signal line (not shown). The drain of the TFT is connected to a drain signal line, the gate electrode 11 is connected to a gate signal line (not shown), and the source 13s is connected to the anode 61 of the EL element. In an actual EL display device, a large number of these pixels are arranged in a matrix to form a display area. Hereinafter, a method for manufacturing the organic EL display device will be described.
[0004]
The display pixel is formed by sequentially laminating a TFT and an organic EL element on a transparent insulating substrate 10 made of glass, synthetic resin, or the like. First, a gate electrode 11 made of a high melting point metal such as chromium (Cr) is formed on an insulating substrate 10, and a gate insulating film 12 and an active layer 13 made of a p-Si film are sequentially formed thereon.
[0005]
The active layer 13 is ion-doped on the channel 13c above the gate electrode 11 and on both sides of the channel 13c by using the stopper insulating film 14 on the channel 13c as a mask, and both sides of the gate electrode 11 are covered with resist. By ion doping, a low concentration region is formed on both sides of the gate electrode 11 and a high concentration region source 13s and drain 13d are formed outside the low concentration region.
[0006]
Then, on the entire surface of the gate insulating film 12, the active layer 13, and the stopper insulating film 14, an interlayer insulating film 15 in which a SiO 2 film, a SiN film, and a SiO 2 film are laminated in this order is formed, and provided corresponding to the drain 13d. The drain electrode 16 is formed by filling the contact hole with a metal such as Al. Further, a flattening insulating film 17 made of, for example, an organic resin and flattening the surface is formed on the entire surface.
[0007]
Then, a contact hole is formed at a position corresponding to the source 13s of the planarization insulating film 17, and an anode 61 serving also as a source electrode made of ITO (Indium Tin Oxide) contacting the source 13s through the contact hole is formed. It is formed on the planarization insulating film 17. The anode 61 is formed of a transparent electrode such as ITO (Indium Tin Oxide). The organic EL element 60 is formed on the anode 61.
[0008]
The organic EL element 60 has a general structure, and includes an anode 61, a first hole transport layer made of MTDATA (4,4-bis (3-methylphenylphenylamino) biphenyl), and a TPD (4,4,4-tris (3- an electron transport layer comprising a hole transport layer 62 composed of a second hole transport layer composed of methylphenylphenylamine and triphenylamine, a light emitting layer 63 composed of Bebq2 (10-benzo [h] quinolinol-beryllium complex) containing a quinacridone derivative, and Bebq2. The layer 64 has a structure in which a cathode 65 made of a magnesium-indium alloy, aluminum, or an aluminum alloy is laminated in this order.
[0009]
The organic EL element 60 emits light by a current supplied through the TFT for driving the organic EL element. That is, the holes injected from the anode 61 and the electrons injected from the cathode 65 recombine inside the light emitting layer, and excite the organic molecules forming the light emitting layer to generate excitons. Light is emitted from the light emitting layer 63 during the process of radiation deactivation of the excitons, and the light is emitted from the transparent anode 61 to the outside through the insulating substrate 10 to emit light.
[0010]
The organic EL materials used for the hole transport layer 62, the light-emitting layer 63, and the electron transport layer 64 of the organic EL element 60 described above have characteristics of low solvent resistance and weakness to moisture. Can not be used. Therefore, the pattern formation of the hole transport layer 62, the light emitting layer 63, the electron transport layer 64, and the cathode 65 of the organic EL element 60 has been performed by an evaporation method using a so-called shadow mask.
[0011]
In addition, as a related prior art document, there is the following Patent Document 1.
[0012]
[Patent Document 1]
JP-A-11-283182
[Problems to be solved by the invention]
When forming the pattern of the organic EL element 60 by the vapor deposition method using the above-described shadow mask, the shadow mask 101 is arranged close to the surface of the insulating substrate 100 as shown in FIG. This is because if the shadow mask 101 is brought into close contact with the insulating substrate 100, its surface may be damaged.
[0014]
Then, a deposition beam 103 containing an organic EL material from a deposition beam generation source (not shown) is emitted to the insulating substrate 100 through an opening 102 provided in the shadow mask 101. Then, as shown in FIG. 7B, an organic EL material is deposited in a region corresponding to the opening 102 on the surface of the insulating substrate 100.
[0015]
However, if the directivity of the vapor deposition beam is low, as shown in FIG. 7A, a component in which the vapor deposition beam is incident obliquely from the edge of the opening 102 of the shadow mask 101 due to the so-called shadow effect, It is deposited on a wider area. Further, the density of the deposition beam decreases from the center of the opening 102 toward the edge. As a result, as shown in FIG. 7B, the deposited organic EL material layer 201 is thicker at the center and thinner at the periphery, resulting in an uneven layer thickness. Could be adversely affected.
[0016]
[Means for Solving the Problems]
Therefore, the present invention improves the directivity of the vapor deposition beam, thereby making the thickness of the organic EL material layer uniform, and improving the accuracy of pattern formation.
[0017]
That is, according to the present invention, an evaporation mask is arranged close to the surface of a substrate to be evaporated arranged in a vacuum chamber, an evaporation beam including an organic EL material is generated from an evaporation beam source, and the evaporation beam is formed by the evaporation. Passing through an opening of a mask and depositing an organic EL material on a predetermined region of the surface of the substrate,
An evaporation beam direction adjusting plate having a plurality of evaporation beam passage holes is disposed opposite to the evaporation beam generation source, and the evaporation beam generated from the evaporation beam generation source passes through the evaporation beam passage holes through the evaporation mask. It is characterized by being radiated.
[0018]
Thereby, the directivity of the deposition beam can be increased, and the film thickness of the organic EL material layer can be made substantially uniform.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view of a deposition beam generation source 50 and a deposition beam direction adjusting plate 70 provided to face the deposition beam generation source 50, FIG. 2 is a cross-sectional view of FIG. 1, and FIG. FIG. 4 is a sectional view of FIG.
[0020]
In the method of manufacturing an organic EL display device of the present invention, an insulating substrate 10 is prepared, and a TFT for driving an organic EL element and an organic EL element 60 are sequentially formed on the insulating substrate 10. Except for the step of forming the EL element 60, it is the same as the step described in the conventional example.
[0021]
The hole transport layer 62, the light emitting layer 63, the electron transport layer 64, and the cathode 65, which constitute the organic EL element 60, are patterned by an evaporation method using a shadow mask 101.
[0022]
As shown in FIGS. 1 and 2, the deposition beam generation source 50 has a storage section 51 of an organic EL material provided at the bottom of a casing having a predetermined shape.
[0023]
The storage unit 51 is provided with a heater 53, and is configured to heat the organic EL material stored in the storage unit 51 to a molten state. Above the storage part 51, a plurality of evaporation beam radiation holes 52 are opened in a line along the longitudinal direction of the housing. The deposition beam is emitted from a plurality of deposition beam radiation holes 52 attached to the deposition beam source 50. Further, the deposition beam 200 emitted from the deposition beam radiation hole 52 passes through a plurality of deposition beams on the deposition beam direction adjusting plate 70 provided opposite to the deposition beam radiation hole 52 on the deposition beam source 50. By passing through the hole 71, the vapor deposition beam 210 with enhanced directivity is obtained.
[0024]
The number of the deposition beam radiation holes 52 and the number of the deposition beam passage holes 71 do not have to match. Further, the vapor deposition beam passage hole 71 preferably has a shape obtained by hollowing out a cylinder from the vapor deposition beam direction adjusting plate 70, but is not limited thereto, and may have a shape obtained by hollowing out a prism.
[0025]
Further, the diameter of the evaporation beam passage hole 71 is preferably about 0.1 mm to 1 mm in order to sufficiently enhance the directivity.
[0026]
Further, it is preferable that the evaporation beam direction adjusting plate 70 is heated by attaching a heating element such as a heater (not shown). Alternatively, the evaporation beam direction adjusting plate 70 may be constituted by a heating element. Thereby, the vapor deposition beam 210 passing through the plural vapor beam passing holes 71 on the vapor beam adjusting plate 70 is heated, and the vapor deposition material is prevented from adhering to the vapor beam passing hole 71.
[0027]
As shown in FIGS. 3 and 4, an insulating substrate 100 on which an organic EL driving TFT or the like is already formed is arranged in a vacuum chamber, and a shadow mask is provided so as to be close to and opposed to the insulating substrate 100. 101 is arranged.
[0028]
In the shadow mask 101, a plurality of openings 102 are formed corresponding to the patterns of the respective organic EL material layers. Then, the above-described vapor deposition beam source 50 is arranged to face the shadow mask 101. Further, a deposition beam direction adjusting plate 70 having a plurality of deposition beam passage holes 71 is disposed to face the deposition beam source 50.
[0029]
Then, the organic EL material stored in the storage part 51 of the deposition beam generation source 50 in the molten state evaporates, and the deposition beam 200 is emitted from the deposition beam emission hole 52. Further, the deposition beam 200 passes through a deposition beam passage hole 71 on a deposition beam direction adjusting plate 70 provided opposite to the deposition beam radiation hole 52, and becomes a deposition beam 210 having a higher directivity to form a shadow mask. It is emitted in the direction of 101. The vapor deposition beam source 50 and the vapor deposition beam direction adjusting plate 70 are simultaneously moved in parallel with respect to the shadow mask 101, so that the vapor deposition beam 210 with enhanced directivity is irradiated over the entire surface of the shadow mask 101. You. Thereby, a pattern of each organic EL material layer is formed.
[0030]
When the deposition beam generating source 50 and the deposition beam direction adjusting plate 70 are simultaneously moved in parallel with respect to the shadow mask 101, the deposition beam generating source 50 and the deposition beam direction adjusting plate 70 are simultaneously moved in an unconnected state in the drawing. Although shown as an example, it may be physically connected as an integral type. Further, since the deposition beam source 50 and the deposition beam direction adjustment plate 70 may be moved relatively to the shadow mask 101, the positions of the deposition beam source 50 and the deposition beam direction adjustment plate 70 are fixed, and The transparent substrate 100 and the shadow mask 101 may be moved.
[0031]
FIG. 5 shows a state in which the insulating substrate 100 is irradiated with the deposition beam 104 through the shadow mask 101. As shown in FIG. 5A, since the directions of all the vapor deposition beams 210 are substantially perpendicular to the shadow mask 101 and the insulating substrate 100, the shadow effect is lost and the direction of the deposition beam 210 is wider than the opening 102. Is prevented from being vapor-deposited in the region. Further, the thickness of the organic EL material 201 after the deposition becomes uniform over the whole.
[0032]
When the shadow mask 101 is arranged so as to be close to and opposed to the insulating substrate 100, the insulating substrate 100 and the shadow mask 101 are separated from each other by a predetermined distance (for example, several tens of microns). It is preferable to provide a plurality of spacers 105 between them. This prevents the shadow mask 101 from coming into contact with the insulating substrate 100 and damaging the film and elements on the surface of the insulating substrate 100.
[0033]
The organic EL material layer includes a plurality of layers such as a hole transport layer 62, a light emitting layer 63, an electron transport layer 64, and a cathode 65. Therefore, for example, after the hole transport layer 62 is deposited in one vacuum chamber, the insulating substrate 100 on which the hole transport layer 62 is deposited is transferred to another vacuum chamber, and a similar process is repeated there, whereby the hole transport layer 62 is deposited. The light emitting layer 63 on the transport layer 62 is formed. Thus, the hole transport layer 62, the light emitting layer 63, the electron transport layer 64, and the cathode 65 are sequentially laminated to form the organic EL element 60.
[0034]
In the above-described embodiment, a plurality of the deposition beam radiation holes 52 and the plurality of the deposition beam passage holes 71 are arranged in a line along the longitudinal direction of the housing to constitute a linear source. The deposition beam emission holes 52 and the deposition beam passage holes 71 may be arranged in a matrix.
[0035]
【The invention's effect】
According to the present invention, when an organic EL element is formed by using a vapor deposition method, a vapor deposition beam is provided so as to face a plurality of vapor deposition beam radiation holes provided in a vapor deposition beam source and the vapor deposition beam radiation holes. Since the radiation is radiated through the plurality of evaporation beam passage holes, the directivity of the evaporation beam is improved, the thickness of the organic EL material layer can be made uniform, and the accuracy of pattern formation can be improved. It is possible to contribute to the improvement of the characteristics and the yield of the organic EL display device incorporating the organic EL element.
[Brief description of the drawings]
FIG. 1 is a perspective view of a vapor deposition beam source used in a method for manufacturing an organic EL device according to an embodiment of the present invention.
FIG. 2 is a cross section of a vapor deposition beam source used in the method for manufacturing an organic EL device according to the embodiment of the present invention.
FIG. 3 is a diagram illustrating a method for manufacturing an organic EL display device according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating a method for manufacturing the organic EL display device according to the embodiment of the present invention.
FIG. 5 is a diagram illustrating a method for manufacturing the organic EL display device according to the embodiment of the present invention.
FIG. 6 is a sectional view of one display pixel of the organic EL display device.
FIG. 7 is a diagram illustrating a method for manufacturing an organic EL display device according to a conventional example.
[Explanation of symbols]
REFERENCE SIGNS LIST 50 vapor deposition beam source 51 storage unit 52 vapor deposition beam emission hole 53 heater 70 vapor deposition beam direction adjustment plate 71 vapor deposition beam passage hole 100 insulating substrate 101 shadow mask 102 opening 105 spacer 200 vapor deposition beam 210 vapor deposition beam with enhanced directivity

Claims (4)

真空チャンバー内に配置された被蒸着基板の表面に近接して蒸着マスクを配置し、蒸着ビーム発生源から有機ＥＬ材料を含む蒸着ビームを発生させ、この蒸着ビームを前記蒸着マスクの開口部に通し、前記基板の表面の所定領域に有機ＥＬ材料を蒸着する工程を含み、
前記蒸着ビーム発生源に対向して、複数の蒸着ビーム通過孔を有する蒸着ビーム方向調整板を配置し、前記蒸着ビーム発生源から発生された蒸着ビームは前記複数の蒸着ビーム通過孔を通して前記蒸着マスクに放射されることを特徴とする有機ＥＬ表示装置の製造方法。An evaporation mask is arranged in close proximity to the surface of the substrate to be evaporated arranged in the vacuum chamber, an evaporation beam containing an organic EL material is generated from an evaporation beam source, and the evaporation beam is passed through an opening of the evaporation mask. Including a step of depositing an organic EL material on a predetermined region of the surface of the substrate,
An evaporation beam direction adjusting plate having a plurality of evaporation beam passage holes is disposed opposite to the evaporation beam generation source, and the evaporation beam generated from the evaporation beam generation source passes through the evaporation beam passage holes through the evaporation mask. The method for manufacturing an organic EL display device, wherein the organic EL display device is radiated to the substrate. 前記複数の蒸着ビーム通過孔は、前記蒸着ビーム方向調整板の長手方向に一列に設けられていることを特徴とする請求項１記載の有機ＥＬ表示装置の製造方法。2. The method according to claim 1, wherein the plurality of evaporation beam passage holes are provided in a line in a longitudinal direction of the evaporation beam direction adjusting plate. 前記蒸着ビーム方向調整板が発熱体により加熱されることを特徴とする請求項１または請求項２記載の有機ＥＬ表示装置の製造方法。3. The method for manufacturing an organic EL display device according to claim 1, wherein the evaporation beam direction adjusting plate is heated by a heating element. 前記蒸着ビーム方向調整板が発熱体で構成されていることを特徴とする請求項１または請求項２記載の有機ＥＬ表示装置の製造方法。3. The method for manufacturing an organic EL display device according to claim 1, wherein the evaporation beam direction adjusting plate is formed of a heating element.
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US10/653,420 US20040115338A1 (en) 2002-09-05 2003-09-03 Manufacturing method of organic electroluminescent display device
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