JP2004096127A - Method for evaluating vaporization performance of vaporizer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vaporizer which can decrease the generation of an unvaporized residue and particle. <P>SOLUTION: This method for evaluating the vaporization performance of a vaporizer is carried out by following processes. Two spraying portions 41, 42 are located in a vaporization chamber 43, and liquid materials 4A, 4B having similar vaporization characteristics are mixed and are sprayed from the same spraying portion 41 to be vaporized on a vaporizing surface S12. A liquid material 4C having different vaporization characteristics is sprayed from the other spraying portion 42 to be vaporized on a vaporizing surface S11. The temperatures of the vaporizing surfaces S11, S12 are controlled by temperature control devices 48, 50 independently to be temperatures suitable to the liquid material 4C and liquid materials 4A, 4B, respectively. Consequently, the unvaporization or heat decomposition of a part of each liquid material 4A, 4B or 4C is reduced, and the generation of residue can be decreased. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a vaporizer that is used for CVD film formation and vaporizes a liquid material such as a liquid organic metal or an organic metal solution, and a vaporization performance evaluation method.

MOCVD (Metal Organic Chemical Vapor Deposition) method is one of the thin film forming methods in the semiconductor device manufacturing process, but it has been actively used in recent years because of its superior film quality, deposition rate, step coverage, etc. compared to sputtering. ing. The CVD gas supply method used in the MOCVD apparatus includes a bubbling method and a sublimation method, but a method of vaporizing and supplying a liquid material in which a liquid organic metal or an organic metal is dissolved in an organic solvent is supplied immediately before the CVD reactor. It attracts attention as a better method in terms of controllability and stability. In this vaporization method, a liquid material is sprayed from a nozzle into a vaporization chamber maintained at a high temperature to vaporize the liquid material (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 10-251853

However, if sufficient thermal energy cannot be given to the liquid material during vaporization, unvaporized residue is generated and the piping is clogged, or the residue becomes particles and reaches the CVD reactor, resulting in poor film formation. There was a risk of this. Furthermore, when vaporizing after mixing a plurality of components, the vaporization temperature and thermal decomposition temperature characteristics differ depending on the components, and a residue is likely to be generated due to unvaporization or thermal decomposition of some components. In order to realize efficient vaporization with reduced generation of unvaporized residues, it is necessary to evaluate the vaporization performance under various vaporization conditions. The current situation is that there is no evaluation method.

An object of the present invention is to provide a vaporizer capable of more effectively atomizing a liquid material and reducing generation of unvaporized residues and particles in a vaporizer that vaporizes a liquid organic metal, an organic metal solution, and the like. It is to provide a reliable method for evaluating vaporization performance.

The embodiment of the invention will be described with reference to FIGS.
(1) Describing in association with FIG. 2, the invention of claim 1 sprays a liquid material composed of a liquid organometallic or organometallic solution into the vaporization chamber 21 maintained at a high temperature, and the sprayed liquid material is sprayed. This is applied to the vaporizer 2 that is vaporized and supplied to the CVD film forming apparatus. The vaporization chamber 21 is provided with a vaporization surface S1 in which the temperature can be controlled independently of the temperature of the vaporization chamber 21 to achieve the above object.
(2) Referring to FIG. 5, the invention of claim 2 sprays liquid materials 4A to 4C made of a plurality of liquid organometallics or organometallic solutions into the vaporizing chamber 43 held at a high temperature. Applied to a vaporizer 40 that vaporizes the liquid materials 4A to 4C and supplies them to the CVD film forming apparatus, and sprays the liquid materials 4A to 4C into the vaporization chamber, and a plurality of spray portions The above-mentioned object is achieved by providing vaporizing surfaces S11 and S12 that are respectively provided so as to oppose 41 and 42 and can be independently temperature controlled.
(3) According to a third aspect of the present invention, in the vaporizer according to the first or second aspect, the vaporizing chamber 43 includes a cylinder extending in the horizontal direction and having a part of the inner wall as vaporized surfaces S11 and S12. A cavity 45 is formed, and the liquid materials 4A to 4C are sprayed vertically downward onto the cylindrical cavity 45.
(4) The invention of claim 4 is the vaporizer according to any one of claims 1 to 3, wherein the inner wall of the vaporizing chamber 43 and the vaporized surfaces S11, S12 are formed by a CVD film forming apparatus. And coated with the same film.
(5) Describing in association with FIG. 2, the invention of claim 5 relates to the vaporizer 2 for vaporizing a liquid material composed of a liquid organometallic or organometallic solution in a vaporizing chamber 21 held at a high temperature. In the vaporization performance evaluation method, after a predetermined amount of liquid material is sprayed into the vaporization chamber 21 to vaporize, the unvaporized deposits in the vaporization chamber 21 are removed with an organic solvent, and the organic solvent used for the removal The above-mentioned object is achieved by measuring the content of the liquid material therein and evaluating the vaporization performance based on the measured content.

In the section of the means for solving the above-described problems for explaining the configuration of the present invention, the drawings of the embodiments of the invention are used for easy understanding of the present invention. The form is not limited.

According to the first to fourth aspects of the present invention, since the temperature of the vaporization surface can be controlled independently of the temperature of the vaporization chamber, the vaporization surface can be maintained at the optimum temperature regardless of the change in the amount of vaporization of the liquid material. As a result, unvaporized residue in the vaporization chamber can be reduced. Furthermore, since the liquid material is atomized by the plurality of spraying portions, the amount of vaporization can be increased.
In particular, according to the second aspect of the present invention, the liquid material is classified according to the vaporization characteristics and the liquid materials having similar vaporization characteristics are the same because the spraying section and the temperature-controllable vaporization surface are provided. It can spray by a spraying part and can vaporize with the vaporization surface controlled to the temperature according to the vaporization characteristic. As a result, it is possible to provide a vaporizer that can be vaporized at a temperature suitable for each liquid material and generates less residue.
According to the invention of claim 3, since the liquid material is sprayed vertically downward, the liquid liquid material does not adhere to the inner wall of the vaporization chamber in the vicinity of the spray portion, and the residue can be reduced. . Moreover, since the mist liquid material flows upward along the side surface from the spraying portion facing portion on the cylindrical side surface, it can be efficiently vaporized.
According to the invention of claim 4, it is possible to prevent a chemical reaction between the inner wall surface of the vaporizing chamber and the liquid material.
According to the invention of claim 5, the vaporization performance of the vaporizer can be reliably evaluated.

Hereinafter, the best mode for carrying out the present invention will be described with reference to FIGS.
-First embodiment-
FIG. 1 is a diagram showing a schematic configuration of the entire vaporizer. Reference numeral 1 denotes a liquid material supply device for supplying a liquid organic metal, an organic metal solution or the like (hereinafter referred to as a liquid material) to the vaporizer 2, and the supplied liquid material is vaporized by the vaporizer 2 to be a CDV device. Is supplied to a CVD reactor provided in For example, liquid organic metals include organic metals such as Cu and Ta, and organic metal solutions include organic metals such as Ba, Sr, Ti, Pb, and Zr dissolved in an organic solvent.

The material containers 3A, 3B, 3C provided in the liquid material supply apparatus 1 are filled with liquid materials 4A, 4B, 4C used for MOCVD. For example, in the case of forming a BST film (BaSrTi oxide film), the raw materials Ba, Sr, and Ti dissolved in an organic solvent THF (tetrahydrofuran) are used as the liquid materials 4A, 4B, and 4C. The solvent container 3D is filled with THF as the solvent 4D. The containers 3A to 3D are provided according to the number of raw materials, and are not necessarily four.

A charge gas line 5 and transfer lines 6A to 6D are connected to the containers 3A to 3D. When charge gas is supplied into the containers 3A to 3D via the charge gas line 5, gas pressure is applied to the liquid surfaces of the liquid materials 4A to 4C and the solvent 4D filled in the containers 3A to 3D, and the liquids Materials 4A-4C and solvent 4D are extruded into transfer lines 6A-6D, respectively. The liquid materials 4A to 4C and the solvent 4D pushed out to the transfer lines 6A to 6D are further transferred to the transfer line 6E by the gas pressure, and are mixed in the transfer line 6E.

The carrier gas is supplied to the transfer line 6E from the carrier gas line 7, and the carrier gas, the liquid materials 4A to 4C, and the solvent 4D are supplied to the vaporizer 2 in a gas-liquid two-phase flow state. The The vaporizer 2 is supplied with a carrier gas via a carrier gas line 7, and the vaporized material is sent to the CVD reactor by the carrier gas.

Note that an inert gas such as nitrogen gas or argon gas is used for the charge gas and the carrier gas. Moreover, it is preferable to reduce the retention amount of the liquid materials 4A to 4C and the solvent 4D in the transfer lines 6A to 6E as much as possible. In this embodiment, 1/8 inch piping is used for the transfer lines 6A to 6C. .

The transfer lines 6A to 6D are provided with mass flow meters 8A to 8D and flow control valves 9A to 9D with a shut-off function. The flow rate control valves 9A to 9D are controlled while monitoring the flow rates of the liquid materials 4A to 4C and the solvent 4D with the mass flow meters 8A to 8D, respectively, so that the flow rates of the liquid materials 4A to 4C and the solvent 4D are appropriate. . Note that a mixer may be provided immediately before the vaporizer in the transfer line 6E to further improve the mixing state of the liquid materials 4A to 4C. Furthermore, instead of the flow rate control valves 9A to 9D for controlling the flow rates of the liquid materials 4A to 4C, the flow rate may be controlled using a pump such as a plunger pump.

2 to 4 are views showing details of the vaporizer 2, FIG. 2 is a cross-sectional view of the vaporizer 2 seen from the front, FIG. 3 is a cross-sectional view taken along line AA 'of FIG. 2, and FIG. It is an enlarged view of the B section. As shown in FIG. 2, the vaporizer 2 includes an atomization unit 20 that atomizes the liquid materials 4A to 4C and a vaporization chamber 21 that further vaporizes the liquid materials 4A to 4C atomized by the atomization unit 20. ing. A cylindrical cavity 22 extending in the horizontal direction (the left-right direction in the figure) is formed in the chamber body 21a of the vaporization chamber 21. The atomization unit 20 is attached so as to blow out the atomized gas vertically downward with respect to the cylindrical cavity 22. The flange 21b can be attached to and detached from the chamber main body 21a. For example, when cleaning the inside of the chamber, the flange 21b is removed and the cylindrical cavity 22 is opened to the atmosphere for cleaning.

The atomizing unit 20 is supplied with the liquid mixture of the liquid materials 4A to 4C from the transfer line 6E and is also supplied with the carrier gas via the carrier gas line 7. As shown in the enlarged view of part B of FIG. 4, the pipe through which the mixed liquid and the carrier gas flow has a double pipe structure composed of an inner pipe 23 and an outer pipe 24, and the mixed liquid passes through the inside of the inner pipe 23. It flows in a gas-liquid two-phase flow state, and the carrier gas flows through the annular space between the inner pipe 23 and the outer pipe 24. An orifice member 25 is provided at the distal end portion of the vaporizing section 20, and the carrier gas is ejected through the gap between the inner pipe 23 and the orifice member 25 into the chamber space. As a result, the liquid mixture of the liquid materials 4 </ b> A to 4 </ b> C is ejected as a mist from the tip of the inner pipe 23.

As shown in FIG. 2, the lower portion of the casing 27 of the atomizing section 20 is fixed to the chamber body 21a, and is heated to a high temperature due to heat inflow from the chamber body 21a. On the other hand, a water cooling jacket 28 is provided at an upper end portion of the casing 27, and the double pipe is disposed in a cooling rod extending downward from the cooling jacket 28. The orifice member 25 described above is formed of a resin having a low thermal conductivity, and is sandwiched between the distal end portion of the outer pipe 24 and the casing distal end portion as shown in FIG. 4 and functions as a heat insulating member between the two. ing.

The liquid materials 4A to 4C atomized by the atomizing unit 20 in FIG. 2 are ejected toward the surface of the cylindrical cavity 22 facing the tip of the atomizing unit, and the inner periphery of the cylindrical cavity 22 as shown in FIG. It flows along the surface as indicated by an arrow R1. The vaporization chamber 21 is provided with heaters h1 to h9, and the temperature is controlled to be equal to or higher than the vaporization temperature. Therefore, the mist-like liquid materials 4A to 4C are vaporized while flowing along the inner peripheral surface, are discharged from the discharge port 29 together with the carrier gas, and are sent to the CVD reactor.

Heaters h1 to h9 provided on the vaporization chamber main body 21a and the flange 21b are provided, and the heaters h1 to h3 are controlled by the temperature adjusting device 32 based on the temperature detected by the temperature sensor 30. On the other hand, the heaters h <b> 4 to h <b> 9 are controlled by the temperature adjustment device 33 based on the temperature detected by the temperature sensor 31. The entire inner peripheral surface of the cylindrical cavity 22 functions as a vaporization surface. However, as shown in FIGS. 2 and 3, since the liquid materials 4A to 4C are ejected from the atomizing section 20 substantially vertically downward, The surface S1 is the main vaporization surface. Therefore, even when the vaporization chamber is heated uniformly, if the vaporization amount (flow rate of the liquid materials 4A to 4C) is large, the temperature of the vaporization surface S1 is lowered by the heat of vaporization, and unvaporized components are generated as residues on the vaporization surface S1. It becomes easy.

Therefore, in the present embodiment, as shown in FIGS. 2 and 3, the heaters h1 to h3 and the other heaters h4 to h9 provided in the vicinity of the surface S1 are controlled by separate temperature control devices 32 and 33, respectively. During the vaporization, the temperature of the vaporization surface S1 is controlled to be the optimum temperature. That is, the thermal energy generated by the heaters h1 to h3 is adjusted according to the liquid materials 4A to 4C and the flow rate thereof, and the temperature of the vaporization surface S1 is set to the optimum temperature. For example, increasing the thermal energy and setting the temperature of the vaporization surface S1 higher than the temperature of the vaporization chamber 21 is effective when the thermal decomposition temperatures of the liquid materials 4A to 4C are close to the vaporization temperature. As a result, it is possible to reduce the generation of unvaporized components on the vaporized surface S1.

Incidentally, the vaporization chamber 21 is generally formed of a SUS material. However, there is a problem that the wall surface of the cylindrical cavity 22 that functions as a vaporization surface chemically reacts with the liquid materials 4A to 4C. In the present embodiment, in order to prevent such a reaction between the wall surface and the liquid materials 4A to 4C, the film formed by CVD is coated on the wall surface. For example, in the case of a vaporizer used in a CVD apparatus for forming a BST film (BaSrTi oxide film), the wall surface is coated with the BST film. As a result, the SUS wall surface of the cylindrical cavity is protected by the coated film, and reaction with the vaporized metal material can be prevented. Examples of such films include dielectric films such as PZT films (PbZrTi films), STO films (SrTiO ₂ ), TiO ₂ films, SBT films (SrBiTa oxide films), superconducting films, etc. There are oxides.

-Second Embodiment-
FIG. 5 is a diagram showing a second embodiment of the present invention and schematically showing a vaporizer. In the vaporizer according to the first embodiment described above, several kinds of liquid materials 4A to 4C are mixed according to the film formed by the CVD apparatus, and the mixed liquid is sprayed into the vaporization chamber to be vaporized. I have to. However, when the thermal decomposition temperatures and the vaporization temperatures of the liquid materials 4A to 4C are extremely different, the liquid mixture of the liquid materials 4A to 4C is vaporized on the same vaporization surface S1 as in the first embodiment. Attempts to do so sometimes resulted in inconvenience.

For example, as shown in FIG. 6, consider a case where the liquid materials 4A and 4B have substantially the same thermal decomposition temperature and vaporization temperature, and the thermal decomposition temperature and vaporization temperature of the liquid material 4C are greatly different from those. Here, the vaporization temperature is the lowest temperature at which vaporization is possible, and the thermal decomposition temperature is the lowest temperature at which thermal decomposition of the material occurs. Therefore, the temperature of the vaporization surface needs to be set between the vaporization temperature and the thermal decomposition temperature. When the thermal decomposition temperatures T _da , T _db , T _dc and vaporization temperatures T _va , T _vb , T _{vc of the} liquid materials 4A to 4C are as shown in FIG. 6, the temperature T1 of the vaporization surface S1 (see FIG. 3) is The temperature is set as shown in FIG.

However, the liquid material 4C is vaporized at a temperature at which vaporization is possible, and the liquid materials 4A and 4B are vaporized at a temperature at which thermal decomposition occurs. Therefore, the temperature control of the vaporization surface S1 becomes severe, and there is a problem that the vaporization conditions change even with a slight temperature change.

Therefore, in the vaporizer 40 of the present embodiment, the liquid materials 4A and 4B and the liquid material 4C are vaporized on the two vaporization surfaces S11 and S12 that can be independently temperature controlled. In FIG. 5, the vaporization chamber 43 of the vaporizer 40 is provided with two atomization units 41 and 42, the liquid material 4C is atomized by the atomization unit 41, and the liquid materials 4A and 4B are mixed. After that, it is atomized by the atomizing unit 42. The liquid material 4C atomized by the atomization unit 41 is ejected vertically downward toward the vaporization surface S11 of the cylindrical cavity 45 and is mainly vaporized on the vaporization surface S11. On the other hand, the liquid mixture of the liquid materials 4A and 4B atomized by the atomization unit 42 is ejected vertically downward toward the vaporization surface S12 and is mainly vaporized on the vaporization surface S12.

The vaporization chamber 43 is provided with heaters h11 to h17 for heating the chamber, and the temperature control of the entire chamber is performed by controlling the heat generation amount of the heaters h15 to h17 by the temperature adjusting device 46 based on the temperature detected by the temperature sensor 44. Is done. On the other hand, the temperature control of the vaporization surface S11 is performed by controlling the heat generation amount of the heaters h11 and h12 by the temperature adjustment device 48 based on the temperature detected by the temperature sensor 47. Further, the temperature control of the vaporization surface S12 is performed by controlling the heat generation amount of the heaters h13 and h14 by the temperature adjusting device 50 based on the temperature detected by the temperature sensor 49.

For example, when the physical properties of the liquid materials 4A to 4C are as shown in FIG. 6, the vaporization surfaces S11 and S12 are controlled to different temperatures T11 and T12, respectively. Therefore, vaporization can be performed at an optimal vaporization temperature for any of the liquid materials 4A to 4C. Furthermore, since two atomization parts are provided, the atomization part as shown in FIG. 2 can aim at the increase in the amount of vaporization per unit time compared with one vaporizer.

By the way, also in the case of the conventional vaporizer, if two vaporizers are prepared separately and the liquid material 4A and 4B are vaporized on the one hand and the liquid material 4C is vaporized on the other hand, each liquid material 4A is obtained. Although it can be set as the optimal vaporization temperature for ˜4C, the apparatus becomes larger and the cost is significantly increased. On the other hand, according to the vaporizer of the present embodiment, it is possible to remarkably suppress an increase in the size and cost of the vaporizer.

In the above-described embodiment, the physical properties of the liquid materials 4A and 4B are similar, so that they are mixed and sprayed by one spraying part 41. However, the physical properties of the liquid materials 4A to 4C are different from each other. In that case, a spray portion may be provided for each of the liquid materials 4A to 4C.

-Third embodiment-
7 and 8 are views showing a third embodiment of the present invention. FIG. 7 is a sectional view of the vaporizer as seen from the front, and FIG. 8 is a sectional view taken along the line CC ′ of FIG. 7 and 8, the same parts as those in FIGS. 2 and 3 are denoted by the same reference numerals, and different parts will be mainly described below. On the inner side (on the cylindrical cavity 22 side) of the flange 61, a tongue 62 that extends horizontally is provided at a position facing the atomizing portion 20, and the heaters h21 and h22 and a temperature sensor 63 are provided on the tongue 62. Is provided.

The liquid material 64 ejected toward the tongue 62 is vaporized by the vaporization surface S20 of the tongue 62. The heaters h21 and h22 and the temperature sensor 63 provided on the tongue 62 are connected to a temperature adjusting device 65, and are controlled to a temperature slightly higher than that of the chamber body 21a. On the other hand, the heat generation amount of the heaters h1 to h9 is controlled by the temperature adjusting device 66 based on the temperature detected by the temperature sensor 31 provided in the chamber body 21a.

Similarly to the first embodiment, the vaporizer according to the present embodiment is configured such that the vaporization surface S20 can be adjusted separately from the temperature of the chamber main body 21a, as in the first embodiment. The effect of can be obtained. Further, in the present embodiment, unlike the first embodiment, the temperature of a part of the vaporization chamber 21 is independently controlled, and the temperature of the tongue 62 provided separately is controlled independently. Therefore, temperature controllability is improved.

In addition, since attachment of unvaporized components due to vaporization mainly occurs on the upper surface of the tongue 62, when cleaning the vaporization chamber 60, the flange 21 can be removed and the tongue 62 can be individually cleaned. Therefore, the cleaning operation can be simplified and at the same time reliable cleaning can be performed.

(Modification)
A vaporizer 70 shown in FIG. 9 is a modification of the vaporizer shown in FIGS. 7 and 8 and includes two atomizing portions 41 and 42 as in the vaporizer of FIG. A cylindrical cavity 77 extending in the horizontal direction in the figure is formed in the chamber body 74 of the vaporizing chamber 73, and tongues 71 and 72 are formed in the flanges 75 and 76 that are detachably fixed to both ends of the chamber body 74. Has been. The temperature of the vaporizing chamber 73 is maintained at a predetermined temperature by the heaters h31 to h36, the temperature sensor 77, and the temperature adjusting device 78.

The tongue 71 of the flange 75 is formed so as to face the atomizing portion 41, and the facing surface S31 functions as a vaporizing surface of the liquid material 4C. The tongue 71 is provided with a heater h37 and a temperature sensor 79. The temperature of the tongue 71 is controlled by the temperature adjusting device 80 so that the temperature of the tongue 71 becomes the temperature T11 described in the second embodiment. On the other hand, the tongue 72 of the flange 76 is formed so as to face the atomizing portion 42, and the facing surface S32 functions as a vaporization surface of the liquid material 4C. The tongue 72 is also provided with a heater h38 and a temperature sensor 81, and the temperature adjustment device 82 controls the temperature of the tongue 72 to be T12.

Similarly to the vaporizer 40 shown in FIG. 5, the vaporizer 70 shown in FIG. 9 is provided with vaporization surfaces S31 and S32 having different temperatures in accordance with the physical properties of the liquid materials 4A to 4C, and independently controls the temperature. Therefore, the same effect as that of the vaporizer 40 can be obtained. Further, since the vaporizer 70 is provided with the tongues 71 and 72 and the vaporized surfaces S31 and 32 are formed on the upper surfaces thereof, the temperature controllability of the vaporized surfaces S31 and S32 is superior to the vaporizer 40.

-Fourth embodiment-
Next, the vaporization performance evaluation method of the vaporizer will be described. The vaporization performance of the vaporizer is evaluated by the percentage of the liquid material supplied to the vaporizer, which is determined by the difference between the feed rate and the amount of unvaporized components in the vaporizer. Can do. FIG. 10 shows a measurement procedure for performance evaluation, and the case where Ba, Sr, and Ti are used as materials will be described below.

In step S1 of FIG. 10, a predetermined amount of liquid material is vaporized by a vaporizer. Next, in the sampling process of step S2, unvaporized components adhering to all inner wall surfaces of the vaporization chamber including the vaporized surface are removed with ethyl alcohol or the like. For example, ethyl alcohol is included in a cloth having a weight of about 0.1 to 0.3 g, and the unvaporized components adhering to the wall surface are wiped off with the cloth. In the organic matter decomposition step A of step S3, the cloth after wiping is immersed in a mixed solution of 2 ml of hydrochloric acid, 0.5 ml of hydrogen peroxide and 1 ml of pure water, heated at a temperature of 150 ° C. for 1.5 hours, and adhered to the cloth. Decomposes organic matter. In the organic matter decomposition step B of step S4, 1 ml of hydrochloric acid, 0.5 ml of hydrogen peroxide and 1 ml of pure water are further added to the solution of step S3 and heated at a temperature of 150 ° C. for 1.5 hours.

In the boiling / concentration step of step S5, 1 ml of pure water is further added and heated at 150 ° C. for 0.5 hours. In the filtration / constant volume step of step S6, after filtering the solution of step S5, 1 ml of hydrochloric acid is added, and the volume is further adjusted to 20 to 100 ml. In step S7, each element Ba, Sr, Ti is quantitatively analyzed by an analyzer using ICP (inductively coupled plasma) to calculate the amount of unvaporized components. When quantitative analysis is performed, a sample obtained by ICP analysis as shown in FIG. 11 is used as a calibration curve, and the amount of unvaporized components is calculated from comparison with the calibration curve. In step S8, the vaporization rate is calculated from the amount of the liquid material used for vaporization and the amount of the unvaporized component calculated in step S7. Thus, in the evaluation method of the present embodiment, since the unvaporized components adhering to the inner wall surface of the vaporizer are actually quantitatively analyzed, it is possible to accurately evaluate the vaporization performance of the vaporizer. .

It is a figure explaining 1st Embodiment by this invention, and is a figure which shows schematic structure of the whole vaporization apparatus. It is a figure which shows the vaporizer | carburetor 2 in detail, and is sectional drawing seen from the front. It is A-A 'sectional drawing of FIG. It is the B section enlarged view of FIG. It is a figure which shows 2nd Embodiment by this invention, and is the figure which showed typically the vaporizer | carburetor. The figure explaining temperature T1 of the vaporization surface S1. It is a figure which shows 3rd Embodiment by this invention, and is sectional drawing which shows the front of a vaporizer | carburetor. It is C-C 'sectional drawing of FIG. It is a figure which shows the modification of the vaporizer | carburetor shown to FIG. It is a figure explaining 4th Embodiment by this invention, and is a figure which shows a vaporization evaluation procedure. It is a figure which shows the content of the sample used as a calibration curve.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Liquid material supply apparatus 2,40,70 Vaporizer 20,41,42 Atomization part 21,43,60,73 Vaporization chamber 21a, 60,74 Chamber main body 21b, 61,75,76 Flange 22,45,77 Cylinder Cavity 30, 31, 44, 47, 49, 63, 79, 81 Temperature sensor 32, 33, 46, 48, 50, 65, 66, 78, 80, 82 Temperature control device 62, 71, 72 tongue h1-h1, h11 to h17, h21, h22, h31 to h38 Heater S1, S11, S12, S20, S31, S32 Evaporation surface

Claims (5)

In a vaporizer that sprays a liquid material composed of a liquid organic metal or an organic metal solution into a vaporization chamber held at a high temperature, vaporizes the sprayed liquid material, and supplies the vaporized liquid material to a CVD film forming apparatus.
A vaporizer characterized in that a vaporization surface capable of temperature control independent of the temperature of the vaporization chamber is provided in the vaporization chamber. In a vaporizer that sprays a liquid material comprising a plurality of liquid organometallics or organometallic solutions into a vaporization chamber held at a high temperature, vaporizes the sprayed liquid material, and supplies the vaporized liquid material to a CVD film forming apparatus.
A plurality of spray sections for spraying liquid material into the vaporization chamber;
A vaporizer provided with a vaporization surface that is provided so as to face the plurality of spraying portions and can be independently temperature controlled. The vaporizer according to claim 1 or 2,
In the vaporizing chamber, a cylindrical cavity extending in a horizontal direction and having a part of an inner wall as the vaporizing surface is formed, and the liquid material is sprayed vertically downward with respect to the cylindrical cavity. Characterized vaporizer. In the vaporizer in any one of Claims 1-3,
The vaporizer characterized in that the inner wall of the vaporization chamber and the vaporization surface are coated with the same film as that formed by the CVD film formation apparatus. A method for evaluating the vaporization performance of a vaporizer for vaporizing a liquid material composed of a liquid organic metal or an organic metal solution in a vaporization chamber maintained at a high temperature,
After a predetermined amount of the liquid material is sprayed into the vaporization chamber and vaporized, unvaporized deposits in the vaporization chamber are removed with an organic solvent, and the liquid material in the organic solvent used for the removal is removed. A vaporization performance evaluation method characterized by measuring the content and evaluating the vaporization performance based on the measured content.

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