JP2003516872A - Method for producing polymer or polymer composite polishing pad - Google Patents

Method for producing polymer or polymer composite polishing pad

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Publication number
JP2003516872A
JP2003516872A JP2001545039A JP2001545039A JP2003516872A JP 2003516872 A JP2003516872 A JP 2003516872A JP 2001545039 A JP2001545039 A JP 2001545039A JP 2001545039 A JP2001545039 A JP 2001545039A JP 2003516872 A JP2003516872 A JP 2003516872A
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JP
Japan
Prior art keywords
polishing
polymer composition
polymer
polishing pad
layer
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Pending
Application number
JP2001545039A
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Japanese (ja)
Inventor
ヤンシー,ポール・ジェイ
Original Assignee
ロデール ホールディングス インコーポレイテッド
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Publication of JP2003516872A publication Critical patent/JP2003516872A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001Manufacture of flexible abrasive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009Tools not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28Resins or natural or synthetic macromolecular compounds
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971Preformed hollow element-containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971Preformed hollow element-containing
    • Y10T428/249972Resin or rubber element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971Preformed hollow element-containing
    • Y10T428/249974Metal- or silicon-containing element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249976Voids specified as closed
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249981Plural void-containing components
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249986Void-containing component contains also a solid fiber or solid particle

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

(57)【要約】 【課題】 異なるバッチによって製造される半導体基板の研磨用の研磨パッドにおける差違を回避させる研磨パットの製造方法を提供することである。 【解決手段】 半導体基板を研磨するために使用される研磨パッド(300)を製造する方法であって、輸送される裏打ち層(302)を形成する連続材料を連続する製造ステーションに輸送する工程と、流体相ポリマー組成物を輸送される裏打ち層(302)の上に供給する工程と、流体相ポリマー組成物を計られた厚さの表層に成形する工程と、輸送される裏打ち層(302)上のポリマー組成物を硬化オーブン中で硬化させて、液相ポリマー組成物を輸送される裏打ち層(302)に付着した固相研磨層(304)を提供する固相ポリマー層に転換する工程とを含む方法。 PROBLEM TO BE SOLVED: To provide a method for manufacturing a polishing pad for avoiding a difference in a polishing pad for polishing semiconductor substrates manufactured by different batches. A method of manufacturing a polishing pad (300) used to polish a semiconductor substrate, comprising: transporting a continuous material forming a transported backing layer (302) to a continuous manufacturing station. Supplying the fluid phase polymer composition onto the transported backing layer (302); forming the fluid phase polymer composition into a surface layer of a measured thickness; and transporting the backing layer (302). Curing the above polymer composition in a curing oven to convert the liquid phase polymer composition to a solid phase polymer layer providing a solid phase polishing layer (304) adhered to the transported backing layer (302); A method that includes

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】 本発明は、高分子ベースの研磨パッド、特に半導体基板を研磨するために使用
される研磨パッドの製造に関する。
The present invention relates to the manufacture of polymer-based polishing pads, especially polishing pads used to polish semiconductor substrates.

【0002】 米国特許第6,099,954号明細書は、半導体基板を研磨するための研磨
パッドを製造する公知の方法であって、粘稠な研磨剤の層をその場で、つまり製
造される研磨パッドの一部の上に直接凝固させる工程を含む方法を開示している
。研磨剤は、シート状の下地層上にその場で凝固させ、乾燥させたエラストマー
又は高分子である。研磨剤は凝固し、下地層に被着する。この発明よりも前には
、バッチ処理を実施して限られた数の研磨パッドを製造していた。一つのバッチ
処理によって製造された研磨パッドは、別のバッチ処理によって製造された研磨
パッドとは異なるものであった。異なるバッチによって製造される研磨パッドに
おける差違を回避する製造方法が必要とされている。
US Pat. No. 6,099,954 is a known method of manufacturing a polishing pad for polishing a semiconductor substrate, in which a layer of viscous abrasive is manufactured in-situ. Disclosed is a method comprising the step of solidifying directly onto a portion of a polishing pad. The abrasive is an elastomer or polymer coagulated in situ on a sheet-like underlayer and dried. The abrasive solidifies and adheres to the underlayer. Prior to this invention, batch processing was performed to produce a limited number of polishing pads. The polishing pad produced by one batch process was different from the polishing pad produced by another batch process. What is needed is a manufacturing method that avoids differences in polishing pads manufactured by different batches.

【0003】 本発明は、バッチ処理をなくし、異なるバッチによって製造される研磨パッド
間の差違を減らす連続式製造方法を提供する。半導体基板を研磨するために使用
される研磨パッドを製造する方法は、移送される下地層を形成する連続材料を連
続する製造ステーションに通しながら移送する工程と、流体相高分子組成物を移
送される下地層の上に供給する工程と、移送される下地層上の高分子組成物を正
確に計った厚さの表面層に成形する工程と、移送される下地層上高分子組成物を
硬化オーブン中で硬化させて、高分子組成物を、移送される下地層に付着した、
半導体基板を研磨するために使用される研磨パッドの固相研磨相を提供する固相
高分子層に転換する工程とを含む。
The present invention provides a continuous manufacturing method that eliminates batch processing and reduces the differences between polishing pads manufactured by different batches. A method of manufacturing a polishing pad used for polishing a semiconductor substrate includes a step of transferring a continuous material forming an underlying layer to be transferred through a continuous manufacturing station, and a method of transferring a fluid phase polymer composition. Of the polymer composition on the underlying layer to be transferred, the step of molding the polymer composition on the underlying layer to be formed into a surface layer having an accurately measured thickness, and the curing of the polymer composition on the underlying layer to be transferred. Cured in an oven to attach the polymeric composition to the transferred underlayer,
Converting the polishing pad used to polish the semiconductor substrate into a solid phase polymeric layer that provides a solid phase polishing phase.

【0004】 以下、図面を参照しながら本発明の実施態様を例として記載する。[0004]   Hereinafter, embodiments of the present invention will be described as examples with reference to the drawings.

【0005】 図3は、上に載る研磨層(304)に被着又は他の方法で付着した下地層(3
02)を有するタイプの研磨パッド(300)の一部を示す。研磨層(304)
中に砥粒を含まないことから、研磨パッド(300)は、研磨剤フリーのパッド
として公知である。もう一つの実施態様によると、研磨パッド(300)は、研
磨層(304)中に分散した砥粒もしくは粒状物(306)を混入した固定砥粒
パッドになる。研磨剤フリーのパッドは、その中に砥粒もしくは粒状物(306
)を含まない研磨層(304)を思い浮かべることにより、図3に示される。
FIG. 3 illustrates an underlayer (3) deposited or otherwise attached to an overlying polishing layer (304).
02) showing part of a polishing pad (300) of the type having. Polishing layer (304)
The polishing pad (300) is known as an abrasive-free pad because it contains no abrasive grains. According to another embodiment, the polishing pad (300) is a fixed-abrasive pad incorporating abrasive particles or particulates (306) dispersed in the polishing layer (304). Abrasive-free pads have abrasive grains or particles (306
) -Free polishing layer (304) as illustrated in FIG.

【0006】 図3Aは、下地層(302)及び研磨層(304)を有する研磨パッド(30
0)のもう一つの実施態様の一部を示す。研磨層(302)は、その中に分散し
たポーア(308)を混入している。
FIG. 3A shows a polishing pad (30) having an underlayer (302) and a polishing layer (304).
Fig. 7 shows a part of another embodiment of 0). The polishing layer (302) has pores (308) dispersed therein.

【0007】 図3Bは、下地層(302)及び研磨層(304)を有する研磨パッド(30
0)のもう一つの実施態様の一部を示す。研磨層(302)は、その中に中空シ
ェル(310)の形態で分散した微小エレメントを混入している。中空シェル(
310)は、大気圧又はより高い圧力でガス、たとえば空気を充填している。あ
るいはまた、中空シェル(310)は、CMP(化学機械平坦化)として知られ
る研磨処理の間に、中空シェル(310)の破砕又は開口によって放出される公
知の研磨流体で充填されている。CMP研磨処理は、半導体基板を研磨するため
に研磨パッド(300)を使用する。公知の研磨流体は、研磨パッド(300)
と、研磨される半導体基板との界面で放出される。
FIG. 3B shows a polishing pad (30) having an underlayer (302) and a polishing layer (304).
Fig. 7 shows a part of another embodiment of 0). The polishing layer (302) has microelements dispersed therein in the form of hollow shells (310). Hollow shell (
310) is filled with gas, eg air, at atmospheric pressure or higher pressure. Alternatively, the hollow shell (310) is filled with a known polishing fluid released by fracturing or opening of the hollow shell (310) during a polishing process known as CMP (Chemical Mechanical Planarization). The CMP polishing process uses a polishing pad (300) to polish a semiconductor substrate. Known polishing fluids are polishing pads (300)
And is released at the interface with the semiconductor substrate being polished.

【0008】 図1は、研磨パッド(300)を連続的な形態で連続的に製造するための装置
(100)を示す。連続的製造はバッチ処理に取って代わる。連続的製造は、バ
ッチ処理によって生じる、異なる研磨パッド(300)間の差違を減らす。装置
(100)は、長手方向に連続する形態でらせんに巻かれた下地層(302)が
収納されている送り出しリール(102)を含む。下地層(302)は、不織繊
維材料であるか、あるいはまた、不浸透性膜、たとえばポリエステルフィルムで
ある。送り出しローラ(102)は、駆動機構(104)によって機械的に駆動
されて制御された速度で回転する。駆動機構(104)は、たとえば、ベルト(
106)及びモータ駆動プーリ(108)として示されており、あるいはまた、
たとえばモータ駆動フレキシブルシャフト又はモータ駆動ギヤトレーンを含む。
FIG. 1 shows an apparatus (100) for continuously manufacturing a polishing pad (300) in a continuous form. Continuous production replaces batch processing. Continuous manufacturing reduces the differences between different polishing pads (300) caused by batch processing. The device (100) includes a delivery reel (102) containing a spirally wound underlayer (302) in a longitudinally continuous configuration. The underlayer (302) is a non-woven fibrous material, or alternatively, an impermeable membrane, such as a polyester film. The delivery roller (102) is mechanically driven by the drive mechanism (104) to rotate at a controlled speed. The drive mechanism (104) is, for example, a belt (
106) and a motorized pulley (108), or alternatively
For example, it includes a motorized flexible shaft or a motorized gear train.

【0009】 図1は、送り出しリール(102)によって離間した駆動ローラ(112)に
掛けられた連続コンベヤ(110)、たとえばステンレススチールベルト上に供
給される連続下地層(302)を示す。駆動ローラ(112)は、コンベヤ(1
10)の直線移動を連続下地層(302)の直線移動と同期化する速度でモータ
駆動される。下地層(302)は、コンベヤ(110)により、コンベヤ(11
0)に対して、各駆動ローラ(110)と、対応するアイドルローラ(112a
)との間の空間に沿って移送される。アイドルローラ(112a)は、コンベヤ
(110)及び下地層(302)の積極的なトラッキング制御のために下地層(
302)と係合する。コンベヤ(110)は、支持台(110b)の平坦かつ水
平な表面に支持された平坦な区域(110a)を有し、この区域が下地層(30
2)を水平に支持し、下地層(302)を、連続する製造ステーション(114
)、(122)及び(126)に通しながら移送する。コンベヤ(110)及び
下地層(302)の積極的なトラッキング制御のために、ローラの形態の支持部
材(110c)がコンベヤ(110)及び下地層(302)の側縁に沿って配置
されている。
FIG. 1 shows a continuous underlayer (302) fed onto a continuous conveyor (110), for example a stainless steel belt, which is hung by drive rollers (112) separated by a delivery reel (102). The drive roller (112) is attached to the conveyor (1
The motor is driven at a speed that synchronizes the linear movement of 10) with the linear movement of the continuous underlayer (302). The base layer (302) is transferred to the conveyor (11) by the conveyor (110).
0) to each drive roller (110) and the corresponding idle roller (112a
) Is transferred along the space between. The idle roller (112a) is provided with a base layer () for active tracking control of the conveyor (110) and the base layer (302).
302). The conveyor (110) has a flat area (110a) supported on a flat and horizontal surface of a support (110b), which area is the underlayer (30).
2) is supported horizontally and the underlayer (302) is attached to the continuous manufacturing station (114).
), (122) and (126). Support members (110c) in the form of rollers are arranged along the side edges of the conveyor (110) and the underlayer (302) for active tracking control of the conveyor (110) and the underlayer (302). .

【0010】 第一の製造ステーション(114)は、貯蔵タンク(116)及びこのタンク
(116)の出口のノズル(118)を含む。粘稠な流体状態の高分子組成物が
タンク(116)に供給され、ノズル(118)によって連続下地層(302)
の上に小出しされる。ノズル(118)の流量は、タンク(116)の出口のポ
ンプ(120)によって制御される。ノズル(118)は、下地層(302)を
流体状態の高分子組成物で構成された研磨層(304)で覆うため、連続下地層
(302)の幅と同じ幅である。コンベヤ(110)が連続下地層(302)を
製造ステーション(114)に通しながら移送するとき、連続的な流体相の研磨
層(304)が下地層(302)の上に供給される。
The first manufacturing station (114) includes a storage tank (116) and a nozzle (118) at the outlet of this tank (116). A viscous fluid state polymer composition is supplied to a tank (116) and a continuous underlayer (302) is provided by a nozzle (118).
Is dispensed on top. The nozzle (118) flow rate is controlled by a pump (120) at the outlet of the tank (116). The nozzle (118) has the same width as the width of the continuous underlayer (302) because the underlayer (302) is covered with the polishing layer (304) composed of the fluid-state polymer composition. As the conveyor (110) transports the continuous underlayer (302) through the manufacturing station (114), a continuous fluid phase polishing layer (304) is provided over the underlayer (302).

【0011】 第二の製造ステーション(122)は、連続下地層(302)から正確な距離
に位置してそれとの間に隙間を画定するドクターブレード(124)を含む。コ
ンベヤ(110)が連続下地層(302)及び流体相研磨層(304)を製造ス
テーション(122)のドクターブレード(124)に通しながら移送するとき
、ドクターブレード(124)が流体相研磨層(304)を正確な厚さに連続的
に成形する。
The second manufacturing station (122) includes a doctor blade (124) located at a precise distance from the continuous underlayer (302) to define a gap therebetween. As the conveyor (110) transfers the continuous underlayer (302) and the fluid phase polishing layer (304) through the doctor blade (124) of the manufacturing station (122), the doctor blade (124) causes the fluid phase polishing layer (304) to move. ) Is continuously molded to the correct thickness.

【0012】 第三の製造ステーション(126)は、連続下地層(302)及び正確な厚さ
の研磨層(304)が移送されるとき通過する加熱トンネルの形をした硬化オー
ブン(128)を含む。オーブン(128)は、流体相研磨層(304)を、連
続下地層(302)に被着する連続する固相研磨層(304)へと硬化させる。
硬化時間は、オーブン(128)を通過するときの温度及び移送速度によって制
御される。オーブン(128)は、燃料で着火されるか電気的に着火されて、輻
射加熱又は強制対流加熱のいずれか又は両方を使用する。
The third manufacturing station (126) includes a curing oven (128) in the form of a heating tunnel through which the continuous underlayer (302) and the exact thickness of the polishing layer (304) pass. . The oven (128) cures the fluid phase polishing layer (304) into a continuous solid phase polishing layer (304) that adheres to the continuous underlayer (302).
The cure time is controlled by the temperature as it passes through the oven (128) and the transfer rate. The oven (128) is fuel ignited or electrically ignited and uses either radiant heating or forced convection heating or both.

【0013】 オーブン(128)を出ると、連続下地層(302)は連続する固相研磨層(
304)に被着して連続研磨パッド(300)を構成する。連続研磨パッド(3
00)は、製造ステーション(126)に続く巻き取りリール(130)(図1
A)にらせんに巻き取られる。巻き取りリール(130)は第二の駆動機構(1
04)によって駆動される。巻き取りリール(130)及び第二の駆動機構(1
04)が、製造装置(100)の中で選択的に配置される別個の製造ステーショ
ンを構成する。
Upon exiting the oven (128), the continuous underlayer (302) is a continuous solid phase polishing layer (
304) to form a continuous polishing pad (300). Continuous polishing pad (3
00) is a take-up reel (130) (FIG. 1) following the manufacturing station (126).
It is spirally wound in A). The take-up reel (130) has a second drive mechanism (1
04). The take-up reel (130) and the second drive mechanism (1
04) constitutes a separate manufacturing station that is selectively located in the manufacturing apparatus (100).

【0014】 図3に開示する研磨パッド(300)の実施態様によると、粘稠な流体状態の
高分子混合物、たとえばラテックス高分子混合物又はポリウレタン高分子混合物
の高固形分成分がタンク(116)によって供給される。もう一つの実施態様に
よると、高分子混合物は、光学的モニタリング及び検出のための約190nm〜約
3500nmの波長範囲の電子放射線ビームに対して透過性である成分を含む。オ
ーブン(128)中で硬化すると、高分子混合物は、凝固した連続研磨パッド(
300)を形成する。流体状態の高分子混合物に加えられる砥粒又は粒状物(3
06)を含まないと、連続研磨パッド(300)は研磨剤フリーの研磨パッド(
300)である。
According to the embodiment of the polishing pad (300) disclosed in FIG. 3, a high solids component of a polymer mixture in a viscous fluid state, such as a latex polymer mixture or a polyurethane polymer mixture, is stored in a tank (116). Supplied. According to another embodiment, the polymeric mixture comprises components that are transparent to an electron radiation beam in the wavelength range of about 190 nm to about 3500 nm for optical monitoring and detection. Upon curing in an oven (128), the polymeric mixture solidified into a continuous polishing pad (
300) is formed. Abrasive grains or particles (3) added to the polymer mixture in the fluid state
06) is not included, the continuous polishing pad (300) is an abrasive-free polishing pad (
300).

【0015】 もう一つの実施態様によると、砥粒又は粒状物(306)が成分として流体状
態高分子混合物に含まれる。高分子混合物は、砥粒又は粒状物(306)を混入
したマトリックスになる。連続研磨パッド(300)は、連続する研磨層(30
4)中に分散した砥粒又は粒状物(306)を有する固定砥粒研磨パッド(30
0)になる。
According to another embodiment, abrasive grains or particles (306) are included as a component in the fluid state polymer mixture. The polymer mixture becomes a matrix mixed with abrasive grains or particles (306). The continuous polishing pad (300) comprises a continuous polishing layer (30
4) Fixed-abrasive polishing pad (30) having abrasive grains or particles (306) dispersed therein.
0).

【0016】 図3Aに示す研磨パッド(300)の実施態様によると、発泡剤、空気吹込み
剤又はガスの形態の混入成分が、成分が混入されるマトリックスとして働く高分
子混合物に含まれる。硬化すると、発泡剤、空気吹き込み剤又はガスが揮発物と
して脱け出して、連続する研磨層(304)中に分散したポーア(308)を与
える。
According to the embodiment of the polishing pad (300) shown in FIG. 3A, entraining ingredients in the form of blowing agents, air insufflation agents, or gases are included in the polymeric mixture that acts as a matrix into which the ingredients are entrained. Upon curing, the blowing agent, air blowing agent, or gas escapes as volatiles, providing the pores (308) dispersed in the continuous polishing layer (304).

【0017】 図3Bに示す研磨パッド(300)の実施態様によると、マイクロバルーン又
は高分子中空シェル(310)の形態の混入成分が高分子混合物に含まれ、連続
研磨層(304)中に分散する。シェル(310)はガスが充填されている。あ
るいはまた、シェル(310)は、CMPとして知られる研磨処理で研磨パッド
(300)が使用される場合、磨耗又は破砕もしくは破裂によってシェル(31
0)が開口したときに小出しされる研磨流体が充填されている。あるいはまた、
シェル(310)は、CMPとして知られる研磨処理の間に可溶となることによ
って開口する水溶性高分子微小エレメントである。
According to the embodiment of the polishing pad (300) shown in FIG. 3B, contaminant components in the form of microballoons or polymeric hollow shells (310) are included in the polymeric mixture and dispersed in the continuous polishing layer (304). To do. The shell (310) is gas filled. Alternatively, the shell (310) is worn or fractured or ruptured by the shell (31) when the polishing pad (300) is used in a polishing process known as CMP.
0) is filled with polishing fluid that is dispensed when it opens. Alternatively,
The shell (310) is a water-soluble polymeric microelement that opens by becoming soluble during the polishing process known as CMP.

【0018】 本発明よりも前には、ラテックスベースの研磨パッドを製造するバッチ処理法
は、高固形分ラテックス高分子ミックスを型に入れ、その型をオーブンに入れた
のち、オーブン中で型の中でパッドを硬化させることを含むものであった。パッ
ドを製造するためのバッチ処理は、バッチ処理で見られるバッチ及び位置のばら
つきのため、パッドに差違を生じさせるものであった。
Prior to the present invention, a batch process for making latex-based polishing pads was to place the high solids latex polymer mix in a mold, place the mold in an oven, and then mold in the oven. In which the pad was cured. The batch process for making the pads has caused pad differences due to the batch and position variations found in the batch process.

【0019】 図2は、連続研磨パッド(300)の表面コンディショニング又は表面仕上げ
のためのさらなる装置(200)を示す。装置(200)は、図1に示すものに
類似したコンベヤ(110)又は図1に示す同じコンベヤ(110)の延長区域
を含む。装置(200)のコンベヤ(110)は、駆動ローラ(112)と、オ
ーブン(126)を出た連続研磨パッド(300)を支持する平坦な区域(11
0a)とを有する。装置(200)のコンベヤ(110)が連続研磨パッド(3
00)を一つ又は二つ以上の製造ステーション(201)、(208)及び(2
12)に通しながら移送し、オーブン(128)中での硬化に続き、これらのス
テーションで連続研磨パッド(300)がさらに処理される。装置(200)は
、いずれも図1を参照して示したように作動するさらなる平坦な支持台(110
b)及びさらなる支持部材(110c)とで示されている。
FIG. 2 shows a further apparatus (200) for surface conditioning or surface finishing of a continuous polishing pad (300). The apparatus (200) includes a conveyor (110) similar to that shown in FIG. 1 or an extension of the same conveyor (110) shown in FIG. The conveyor (110) of the device (200) has a flat area (11) that supports the drive roller (112) and the continuous polishing pad (300) exiting the oven (126).
0a). The conveyor (110) of the device (200) is connected to the continuous polishing pad (3
00) to one or more manufacturing stations (201), (208) and (2)
12), and subsequent curing in an oven (128), the continuous polishing pad (300) is further processed at these stations. The device (200) has an additional flat support (110) which both operate as shown with reference to FIG.
b) and an additional support member (110c).

【0020】 凝固した研磨層(304)は、バフ磨きして研磨層(304)の所望の表面仕
上げ及び平坦な表面レベルを露出させる。溝又は他の凹みの形態の凹凸が研磨層
(304)の表面に加工される。たとえば、作業ステーション(201)は、箔
押し付け処理の間に互いに対して閉じる、往復箔押ダイ(202)及び固定ダイ
(204)を有する1対の圧縮成形箔押ダイを含む。往復ダイ(202)は、連
続研磨層(304)の表面に面する。ダイ(202)上の多数の歯(206)が
連続研磨層(304)の表面に食い込む。箔押処理は、表面仕上げ処理を提供す
る。たとえば、歯(206)は、研磨層(304)の表面に溝のパターンを付け
る。さらに、たとえば、歯(206)は、高分子混合物中に存在するマイクロバ
ルーン又は中空シェル(310)を連続研磨層(304)の表面で開口させる。
コンベヤ(110)は間欠的に止められ、ダイ(202)及び(204)が互い
に近づくと静止状態になる。あるいはまた、ダイ(202)及び(204)は、
互いに近づくとき、コンベヤ(110)と同期して移送方向に移動する。
The solidified polishing layer (304) is buffed to expose the desired surface finish and flat surface level of the polishing layer (304). Concavities and convexities in the form of grooves or other depressions are machined into the surface of the polishing layer (304). For example, the work station (201) includes a pair of compression molded foil stamping dies having a reciprocating foil stamping die (202) and a stationary die (204) that close against one another during the foil stamping process. The reciprocating die (202) faces the surface of the continuous polishing layer (304). Multiple teeth (206) on the die (202) bite into the surface of the continuous polishing layer (304). The hot stamping process provides a surface finishing process. For example, the teeth (206) pattern a groove on the surface of the polishing layer (304). Further, for example, the teeth (206) open the microballoons or hollow shells (310) present in the polymer mixture at the surface of the continuous polishing layer (304).
The conveyor (110) is intermittently stopped and becomes stationary as the dies (202) and (204) approach each other. Alternatively, the dies (202) and (204) are
As they approach each other, they move in the transfer direction synchronously with the conveyor (110).

【0021】 もう一つの製造ステーション(208)は、連続研磨層(304)の表面に溝
を切るための回転ソー(210)を含む。ソー(210)は、公知の直交動プロ
ッタによって所定の経路に沿って動かされて所定のパターンの溝を切る。
Another manufacturing station (208) includes a rotating saw (210) for scoring the surface of the continuous polishing layer (304). The saw (210) is moved along a predetermined path by a known orthogonal motion plotter to cut a predetermined pattern of grooves.

【0022】 もう一つの製造ステーション(212)は、連続研磨層(304)の表面を、
選択的に粗化又は平滑化される所望の表面仕上げを有する平らで平坦な表面へと
バフ磨き又はミリングするための回転ミリングヘッド(214)を含む。さらに
は、たとえば、ミリングヘッド(214)は、高分子混合物中に存在するマイク
ロバルーン又は中空シェル(310)を連続研磨層(304)の表面で開口させ
る。
Another manufacturing station (212) applies the surface of the continuous polishing layer (304) to
It includes a rotary milling head (214) for buffing or milling to a flat, flat surface having a desired surface finish that is selectively roughened or smoothed. Furthermore, for example, the milling head (214) opens the microballoons or hollow shells (310) present in the polymer mixture at the surface of the continuous polishing layer (304).

【0023】 製造ステーション(202)、(210)及び(212)の順序は、図2に示
す順序とは異なることができる。所望により、製造ステーション(202)、(
210)及び(212)の一つ又は二つ以上を除くことができる。巻き取りリー
ル(130)及び第二の駆動機構(104)が、製造装置(200)の中で選択
的にコンベヤ(110)の終端に配置される、固相の連続研磨パッド(300)
を包装するための別個の製造ステーションを構成する。
The order of manufacturing stations (202), (210) and (212) may differ from the order shown in FIG. If desired, the manufacturing station (202), (
One or more of 210) and (212) can be excluded. A solid phase continuous polishing pad (300) in which a take-up reel (130) and a second drive mechanism (104) are selectively located at the end of a conveyor (110) in a manufacturing apparatus (200).
A separate manufacturing station for packaging the.

【0024】 この方法は、高分子の液相から固相への硬化系に適応され、これにしたがって
、混合物成分の粘稠な成形性高分子混合物ができる。溶媒ベースの中間工程を含
まない高分子混合物、たとえば射出成形高分子混合物でさえ、まず、高分子成分
を極小サイズに粉砕し、粉砕した成分を濃縮分散液に分散させ、乾燥させたのち
、粉砕した成分をオーブン(128)に入れて溶融させて粉砕した成分を融合さ
せることにより、開示した方法に適応される。
This method is adapted to a liquid-to-solid phase curing system of polymers, which in turn leads to viscous moldable polymer mixtures of the mixture components. Even polymer mixtures without solvent-based intermediate steps, such as injection-molded polymer mixtures, first grind the polymer components to a very small size, disperse the milled components in a concentrated dispersion, dry and then mill. The disclosed method is applied by placing the ingredients in an oven (128) to melt and fuse the milled ingredients.

【0025】 原料は、タンク(116)を繰り返し満たす大きな均質供給で混合することが
できるため、完成製品の構成及び性質における差違が最小限になる。本方法の連
続性は、多数の独立した研磨パッド(300)が所望の面積のパターン及びサイ
ズに切り出される連続研磨パッド(300)を製造するための精密制御を可能に
する。多数の独立した研磨パッド(300)は、構成及び性質において最小限の
差違しか有しない。
The raw materials can be mixed in a large homogeneous feed that repeatedly fills the tank (116), thus minimizing differences in the composition and properties of the finished product. The continuity of the method allows for precise control to produce a continuous polishing pad (300) in which a large number of independent polishing pads (300) are cut into a desired area pattern and size. Multiple independent polishing pads (300) have minimal differences in construction and properties.

【図面の簡単な説明】[Brief description of drawings]

【図1】 半導体基板を研磨するために使用される連続形態の研磨パッドを連続的に製造
するための装置の略図である。
FIG. 1 is a schematic diagram of an apparatus for continuously manufacturing a polishing pad in a continuous form used for polishing a semiconductor substrate.

【図1A】 連続研磨パッドが巻き付けられる巻き取りリールの略図である。FIG. 1A   3 is a schematic view of a take-up reel around which a continuous polishing pad is wound.

【図2】 半導体基板を研磨するために使用される連続研磨パッドの連続コンディショニ
ングのための装置の略図である。
FIG. 2 is a schematic diagram of an apparatus for continuous conditioning of a continuous polishing pad used to polish a semiconductor substrate.

【図3】 図1に示す装置によって製造された研磨パッドの部分断面図である。[Figure 3]   FIG. 2 is a partial cross-sectional view of a polishing pad manufactured by the device shown in FIG. 1.

【図3A】 図1に示す装置によって製造されたもう一つの研磨パッドを示す、図3に類似
した図である。
3A is a view similar to FIG. 3, showing another polishing pad produced by the apparatus shown in FIG.

【図3B】 図1に示す装置によって製造されたもう一つの研磨パッドを示す、図3に類似
した図である。
3B is a view similar to FIG. 3, showing another polishing pad manufactured by the apparatus shown in FIG.

【符号の説明】[Explanation of symbols]

100 研磨パッド製造装置 102 リール、送り出しリール 104 駆動機構、第二の駆動機構 106 ベルト 108 モータ駆動プーリ 110 コンベヤ、連続コンベヤ 110a 平坦な区分 110b 支持台 110c 支持部材 112 駆動ローラ 112a アイドルローラ 114 製造ステーション 116 貯蔵タンク 118 貯蔵タンクの出口のノズル 122 製造ステーション 124 ドクターブレード 126 製造ステーション 128 硬化オーブン 130 リール、巻き取りリール 200 表面コンディショニング又は表面仕上げ装置 201 製造ステーション 202 圧縮成形ダイ、箔押ダイ、往復ダイ 204 圧縮成形ダイ、固定ダイ 206 歯 210 回転ソー 212 製造ステーション 212 製造ステーション 214 回転ミリングヘッド 300 研磨パッド 302 裏打ち層 304 固相研磨層、連続研磨層 306 砥粒、粒状物 100 Polishing pad manufacturing equipment 102 reel, sending reel 104 drive mechanism, second drive mechanism 106 belt 108 motor drive pulley 110 conveyors, continuous conveyors 110a flat section 110b support 110c support member 112 drive roller 112a idle roller 114 Manufacturing Station 116 Storage tank 118 Nozzle at outlet of storage tank 122 Manufacturing Station 124 doctor blade 126 Manufacturing Station 128 curing oven 130 reels, take-up reels 200 Surface conditioning or finishing equipment 201 Manufacturing Station 202 compression molding die, hot stamping die, reciprocating die 204 compression molding die, fixed die 206 teeth 210 rotating saw 212 Manufacturing Station 212 Manufacturing Station 214 rotary milling head 300 polishing pad 302 Backing layer 304 Solid phase polishing layer, continuous polishing layer 306 Abrasive grains, granular materials

【手続補正書】特許協力条約第34条補正の翻訳文提出書[Procedure for Amendment] Submission for translation of Article 34 Amendment of Patent Cooperation Treaty

【提出日】平成14年1月29日(2002.1.29)[Submission date] January 29, 2002 (2002.29)

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims

【補正方法】変更[Correction method] Change

【補正の内容】[Contents of correction]

【特許請求の範囲】[Claims]

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板を研磨するために使用される研磨パッドを製造す
る方法であって、 移送される下地層(302)を形成する連続材料を連続する製造ステーション
(114)(122)(126)に移送する工程と、 流体相高分子組成物を前記移送される下地層(302)の上に供給する工程と
、 前記移送される下地層(302)上の前記流体相高分子組成物を正確に計った
厚さの表面層(304)に成形する工程と、 前記移送される下地層(302)上の前記高分子組成物を硬化オーブン中で硬
化させて、前記高分子組成物を、前記移送される下地層(302)に付着した、
半導体基板を研磨するために使用される研磨パッド(300)の固相研磨層(3
04)を提供する固相高分子層に転換する工程と を含む方法。
1. A method of manufacturing a polishing pad used to polish a semiconductor substrate, comprising: a continuous manufacturing station (114) (122) (of continuous material forming an underlying layer (302) to be transferred. 126), supplying the fluid phase polymer composition onto the transferred underlayer (302), and the fluid phase polymer composition above the transferred underlayer (302). Is formed into a surface layer (304) having an accurately measured thickness, and the polymer composition on the transferred underlayer (302) is cured in a curing oven to form the polymer composition. Adhered to the transferred underlayer (302),
The solid phase polishing layer (3) of the polishing pad (300) used for polishing a semiconductor substrate.
04) providing a solid phase polymer layer.
【請求項2】 前記流体相高分子組成物を、粒状物が混入されたマトリック
スとして供給して、固定砥粒研磨パッド(300)の固相研磨層(304)を設
ける工程をさらに含む、請求項1記載の方法。
2. The method further comprises the step of providing the fluid phase polymer composition as a matrix in which particulates are mixed to provide a solid phase polishing layer (304) of a fixed abrasive polishing pad (300). The method according to item 1.
【請求項3】 前記流体相高分子組成物を、水溶性高分子微小エレメントが
混入されたマトリックスとして供給して、前記水溶性高分子微小エレメントが混
入された研磨パッド(300)の研磨層(304)を設ける工程をさらに含む、
請求項1記載の方法。
3. The polishing layer (300) of the polishing pad (300) containing the water-soluble polymer microelements, wherein the fluid-phase polymer composition is supplied as a matrix containing the water-soluble polymer microelements. 304) is further included.
The method of claim 1.
【請求項4】 前記流体相高分子組成物を、高分子シェル(310)を有す
る高分子微小エレメントが混入されたマトリックスとして供給して、前記高分子
微小エレメントが混入された研磨パッド(300)の固相研磨層(304)を設
ける工程をさらに含む、請求項1記載の方法。
4. The polishing pad (300) containing the polymer microelements, wherein the fluid phase polymer composition is supplied as a matrix containing the polymer microelements having a polymer shell (310). The method of claim 1, further comprising the step of providing a solid phase polishing layer (304).
【請求項5】 前記流体相高分子組成物を、研磨流体を含有する高分子シェ
ル(310)を有する高分子微小エレメントが混入されたマトリックスとして供
給して、前記高分子微小エレメントが混入された研磨パッド(300)の固相研
磨層(304)を設ける工程をさらに含む、請求項1記載の方法。
5. The fluid phase polymer composition is provided as a matrix containing polymer microelements having a polymer shell (310) containing a polishing fluid, the polymer microelements being incorporated. The method of claim 1, further comprising providing a solid phase polishing layer (304) of the polishing pad (300).
【請求項6】 前記流体相高分子組成物を、前記砥粒(306)が混入され
たマトリックスとして供給して、前記砥粒(306)が混入された研磨パッドの
固相研磨層を設ける工程をさらに含む、請求項1記載の方法。
6. The step of supplying the fluid phase polymer composition as a matrix containing the abrasive grains (306) to form a solid phase polishing layer of a polishing pad containing the abrasive grains (306). The method of claim 1, further comprising:
【請求項7】 ポーアを有する固相研磨層(304)を提供する成分を前記
流体相高分子成分に供給する工程をさらに含む、請求項1記載の方法。
7. The method of claim 1, further comprising the step of providing to said fluid phase polymeric component a component that provides a solid phase polishing layer (304) having pores.
【請求項8】 前記固相高分子組成物及び前記下地層(302)を回転ミリ
ングヘッド(214)で表面仕上げする工程をさらに含む、請求項1記載の方法
8. The method of claim 1, further comprising surface finishing the solid phase polymeric composition and the underlayer (302) with a rotary milling head (214).
【請求項9】 前記固相高分子組成物及び前記下地層(302)を1対の圧
縮成形ダイ(202)及び(204)の間で箔押する工程をさらに含む、請求項
1記載の方法。
9. The method of claim 1, further comprising foil stamping the solid phase polymeric composition and the underlayer (302) between a pair of compression molding dies (202) and (204). .
【請求項10】 前記固相高分子組成物及び前記下地層(302)を1対の
圧縮成形ダイ(202)及び(204)の間で箔押することにより、前記固相高
分子組成物中の中空シェルを開口させる工程をさらに含む、請求項1記載の方法
10. The solid polymer composition in the solid polymer composition by foil stamping the solid polymer composition and the underlayer (302) between a pair of compression molding dies (202) and (204). The method of claim 1, further comprising the step of opening the hollow shell of.
JP2001545039A 1999-12-14 2000-12-11 Method for producing polymer or polymer composite polishing pad Pending JP2003516872A (en)

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US6428586B1 (en) 2002-08-06
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WO2001043920A1 (en) 2001-06-21
KR20020072548A (en) 2002-09-16

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