JP2003332184A - Element transferring method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an element transferring method which is capable of transferring an element with high efficiency and accuracy. <P>SOLUTION: A first support body where the elements are arranged and held by a first thermosensitive adhesive layer and a second support body equipped with a second thermosensitive adhesive layer are pasted together, the elements and the second thermosensitive adhesive layer are brought into contact with each other, the first and second thermosensitive layers are changed in temperature so as to enable the elements to be separated from the first thermosensitive layer, the first and second support bodies are separated from each other so as to transfer the elements to the second support body in a state in which the elements are kept separable from the first thermosensitive adhesive layer. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for transferring an element such as a semiconductor light emitting element.

[0002]

2. Description of the Related Art At present, electronic devices and the like are constructed by arranging a large number of fine elements, electronic parts, electronic devices, and electronic parts in which they are embedded in an insulator such as plastic. Widely used. For example, when the light emitting elements are arranged in a matrix and assembled into an image display device, a liquid crystal display device (L
CD: Liquid Crystal Display
y) and plasma display panel (PDP: Plas)
Elements such as a ma Display Panel) are directly formed on a substrate, or a single LED package is arranged like a light emitting diode display (LED display).

Here, in an image display device such as an LCD or PDP, since the elements cannot be separated from each other, it is usual to form each element with a pitch of the pixel pitch of the image display device from the beginning of the manufacturing process. It is being appreciated.

On the other hand, in the case of an LED display, L
The ED chip is taken out after dicing, individually connected to external electrodes by wire bonding or bump connection by flip chip, and packaged. In this case, the pixels are arranged at a pixel pitch as an image display device before or after packaging, and this pixel pitch is independent of the element pitch at the time of element formation.

LED (light emitting diode) which is a light emitting element
Is expensive, it is possible to reduce the cost of the image display device using LEDs by manufacturing many LED chips from one wafer. That is, the price of the image display device can be reduced by changing the conventional LED chip size of about 300 μm square to an LED chip of several tens μm square and connecting the LED chips to manufacture the image display device.

Therefore, there is a technique for forming a relatively large display device such as an image display device by forming each device with a high degree of integration and moving each device while separating them by wide area transfer or the like. The element 63 is arranged on the adhesive layer 62 on the base substrate 61 as shown in FIG.
As shown in (b), there is a technique in which the element 63 is taken out by using the suction head 64 and placed on the adhesive layer 66 of another substrate 65 to perform transfer.

[0007]

By the way, in the case of manufacturing an image display device by a transfer technique, it is necessary to surely transfer the element. Further, efficient transfer and accurate transfer are also required.

However, when the above-mentioned method is used, a plurality of processes of picking up and moving the element by the suction head, and placing it on the substrate are required to perform the transfer, so that the transfer process becomes complicated. In addition, since multiple types of equipment are required, it is costly. Further, when the elements are placed, that is, when the elements are mounted, it is necessary to place the elements one by one, which is extremely complicated and takes a very long time. On the other hand, when it is attempted to improve the work efficiency of the mounting machine in order to shorten the mounting time of the elements, there arises a problem that the accuracy of the array when mounting the elements is reduced.
Further, in the current mounting machine, the positioning accuracy when arranging the elements is limited to about 10 μm, and it is difficult to further improve the positioning accuracy with the current mechanical positioning method.

Therefore, the present invention has been conceived in view of such conventional circumstances, and an object thereof is to provide an element transfer method capable of transferring an element efficiently and accurately. .

[0010]

A method for transferring an element of the present invention to solve the above-mentioned problems is a first support in which elements are arranged and held by a first temperature-sensitive adhesive layer, and a second support. A step of attaching a second support having a temperature-sensitive adhesive layer, and the element and the second temperature-sensitive adhesive layer are in contact with each other, the first temperature-sensitive adhesive layer and the By changing the temperature of the second temperature-sensitive adhesive layer to enable the element to be peeled from the first temperature-sensitive adhesive layer, the first support and the second support are separated, the element Is transferred onto the second support.

The elements arranged on the first temperature-sensitive adhesive layer are brought into contact with the second temperature-sensitive adhesive layer, and the temperature of the first temperature-sensitive adhesive layer is changed to support the element as the first support. By making it peelable from the body, the element can be transferred to the second support only by a simple method of changing the temperature.

Further, in order to solve the above-mentioned problems, the method of transferring an element of the present invention is such that, in a state where the element can be separated from the first temperature-sensitive adhesive layer, the second temperature-sensitive adhesive layer is formed. The adhesive force of the first temperature-sensitive adhesive layer is larger than the adhesive force of the first temperature-sensitive adhesive layer, the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer The change is inversely correlated.

The adhesive force of the second temperature-sensitive adhesive layer is larger than that of the first temperature-sensitive adhesive layer in a state where the first temperature-sensitive adhesive layer can be peeled by changing the temperature. Due to the large size, the elements on the first support are transferred to the second support only by changing the temperature and separating the first support and the second support. Since only one temperature change is required, the transfer process can be simplified.

Further, in order to solve the above-mentioned problems, a method of transferring an element of the present invention is to change the temperature of the second temperature-sensitive adhesive layer after the element is transferred onto the second support. A step of allowing the element to be peeled from the second temperature-sensitive adhesive layer, and a step of removing the predetermined element in a state where the element can be peeled from the second temperature-sensitive adhesive layer. Have.

By changing the temperature of the second temperature-sensitive adhesive layer so that the element can be peeled from the second support and the predetermined element is removed, after the element is transferred onto the second support, Even if a defect is found in the element, the defective element can be easily removed, and the defect rate of the display device or the like in which the elements are arranged can be reduced.

At the position where the predetermined element is removed from the second support, the temperature of the second temperature-sensitive adhesive layer is changed so that the other element is added to the second temperature-sensitive adhesive layer. Is characterized in that other elements are arranged so that they can be bonded.

By changing the temperature of the second temperature-sensitive adhesive layer, the element can be bonded on the second support, and another element can be arranged at the position where the removed element was present. Even if a defect is found in the elements arranged on the second support, the defective element can be easily removed, and the defect rate of the display device in which the elements are arranged can be reduced. Is possible.

Further, in the element transfer method of the present invention for solving the above problems, the elements are arranged and held by the first temperature-sensitive adhesive layer on one surface of the mask in which the opening is formed. A step of attaching a first support, a step of attaching a second support having an adhesive layer on the other surface of the mask, and a step of attaching the first support and the second support The step of bringing the element and the adhesive layer in a position corresponding to the opening into contact with each other by applying pressure, and in a state where the element and the adhesive layer are in contact with each other, the first temperature-sensitive adhesive layer is The element can be peeled from the first temperature-sensitive adhesive layer by changing the temperature, and the first support and the second support are separated, and the element is placed on the second support. And a step of transferring.

The elements arranged on the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer are brought into contact with each other through the mask having the opening, and the first temperature-sensitive adhesive layer is formed. By changing the temperature so that the element can be separated from the first support, only the element at the position corresponding to the opening can be selectively transferred onto the second support, and the element can be easily Transfer can be performed.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION A method of transferring an element to which the present invention is applied will be described below in detail with reference to the drawings.

First, a method of transferring a basic element will be described. In the present invention, when transferring the elements arrayed and formed on the first support to the second support, a temperature-sensitive adhesive layer is formed on each of the first support and the second support. In addition, the temperature-sensitive adhesive property of the temperature-sensitive adhesive layer (hereinafter referred to as the first temperature-sensitive adhesive layer) formed on the first support is the temperature-sensitive adhesive property as the temperature rises. The temperature-sensitive adhesive property of the temperature-sensitive adhesive layer (hereinafter referred to as the second temperature-sensitive adhesive layer) formed on the second support has the following characteristic: It is characterized by improving power. That is, in the present invention,
The first temperature-sensitive adhesive layer is plasticized by utilizing the difference in the temperature-sensitive characteristics of the adhesive force of the two temperature-sensitive adhesive layers described above,
Transfer the elements to the second support by melting them to make the elements arrayed on the first support peelable, and plasticizing, melting, and curing the second temperature-sensitive adhesive layer. To do.

Here, the combination of the change temperatures of the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer is such that the change temperature of the first temperature-sensitive adhesive layer is the second temperature-sensitive adhesive layer. Change temperature of the first temperature-sensitive adhesive layer may be lower than the change temperature of the second temperature-sensitive adhesive layer.

[First Embodiment] The first embodiment to which the present invention is applied will be described below in detail with reference to the drawings. In order to transfer and arrange the elements, as shown in FIG. 1A, first, an element 2 such as a light emitting diode (LED) is placed on a growth substrate 1 such as a sapphire substrate by a metal organic chemical vapor deposition method. (MOCVD: metal-organ
nic chemical vapor deposi
cation) and hydride vapor phase epitaxy (HVPE: H
hydride Vapor Phase Epitax
y) and molecular beam epitaxy (MBE: Molecular)
A plurality of them are formed by using a manufacturing method such as ar beam epitaxy. Here, the growth substrate 1 is a sapphire substrate, but any substrate capable of growing a semiconductor layer to form the element 2 may be used. Further, the element 2 can be applied to any element, and if exemplified, a light emitting diode, a semiconductor laser element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element,
Examples thereof include a thin film diode element, a resistance element, a switching element, a micro magnetic element and a micro optical element.

Next, as shown in FIG. 1 (b), the adhesive sheet 5 having the first temperature-sensitive adhesive layer 4 formed on the sheet-like support 3 is formed into the element 2 of the growth substrate 1. It is pasted and adhered to the surface. As a result, the element 2 is covered and protected by the first temperature-sensitive adhesive layer 4.
When the growth substrate 1 and the adhesive sheet 5 are bonded together, the adhesive sheet 5 may be placed on the growth substrate 1 and then light pressure may be applied by a laminator or a rubber roller. Further, the support 3 is not limited to the sheet shape and may be a tape shape.

The first temperature-sensitive adhesive layer 4 is a layer having a property that the adhesive force changes abruptly at a predetermined change temperature. This first temperature-sensitive adhesive layer 4 reduces the adhesive force with the element 2 by being heated to a temperature equal to or higher than the changing temperature of the first temperature-sensitive adhesive layer 4, so that the element 2 is not It can be easily peeled from the temperature-sensitive adhesive layer 4.

As a material for the first temperature-sensitive adhesive layer 4, for example, a thermoplastic material is suitable, and a thermoplastic resin or the like can be used. Here, when the thermoplastic resin is used, by heating the first temperature-sensitive adhesive layer 4 to a temperature equal to or higher than a predetermined change temperature, the thermoplastic resin is plasticized and melted. The adhesive force between the temperature-sensitive adhesive layer 4 and the element 2 is reduced, and the element 2 can be easily peeled off. As such a thermoplastic resin, for example, hydroxyethyl, polysulfane, etc. are suitable. A thermosetting material may be used as the first temperature-sensitive adhesive layer 4.

The first temperature-sensitive adhesive layer 4 is the support 3
May be formed on the entire main surface on the side where the elements 2 are arranged,
Further, it may be selectively formed at a position corresponding to the element.
However, when the first temperature-sensitive adhesive layer 4 is formed by coating, it is preferable to form it uniformly on the entire surface because the process can be simplified.

The support 3 may be made of any material in consideration of the combination with the element 2 and the like, but it shows sufficient heat resistance even with temperature change due to heating and cooling due to the constitution of the present invention. Also, a material made of a material having a low expansion property is used. Then, it is preferable to use a material having good thermal conductivity such as a metal substrate. Also, the support 3
May have a multi-layer structure or a single-layer structure.

The inventor of the present application uses, as the above-mentioned pressure-sensitive adhesive sheet 5, a PET (Poly Ethyl) having a thickness of 100 μm.
When the temperature exceeds about 50 ° C., the adhesive force is 100 on the support 3 which is a ne Terephthalate film.
A first temperature-sensitive adhesive layer 4 having a thickness of 20 μm, which decreases from 0 g / 25 mm to 10 g / 25 mm, was used.

Thereafter, as shown in FIG. 1C, the element 2 is peeled off from the growth substrate 1 so that the element 2 is held by the first temperature-sensitive adhesive layer 4 of the adhesive sheet 5. When the element 2 is a GaN-based light emitting diode, the element 2 is separated from the growth substrate 1 by irradiating laser light from the back surface side of the growth substrate 1 to remove gallium and nitrogen at the interface with the growth substrate 1. Then, the element 2 can be separated from the growth substrate 1 relatively easily. When the device 2 is a GaAs-based light emitting diode, the growth substrate 1 is removed by lapping and etching the growth substrate 1 so that only the device 2 remains on the first temperature-sensitive adhesive layer 4. Element 2
Any method may be used as long as it can be separated from the growth substrate 1 and left on the first temperature-sensitive adhesive layer 4.

Next, as shown in FIG. 1D, the transfer substrate 8 having the second temperature-sensitive adhesive layer 7 formed on the base material 6 is placed at a desired position between the support 3 and the transfer substrate 8. The element 2 and the temperature-sensitive adhesive layer 4 are disposed so as to face each other so as to be in a relationship, and the surface of the pressure-sensitive adhesive sheet 5 on which the element 2 is held is bonded and adhered. As a result, the element 2 is sandwiched by the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7.

The transfer substrate 8 may be made of any material in consideration of the combination with the element 2 and the like, but it shows sufficient heat resistance even with temperature change due to heating and cooling due to the constitution of the present invention. Also, a material made of a material having a low expansion property is used. Then, it is preferable to use a material having good thermal conductivity such as a metal substrate. The transfer substrate 8 may have a multi-layer structure or a single-layer structure.

The second temperature-sensitive adhesive layer 7 is heated to a temperature equal to or higher than a predetermined temperature by changing the temperature from a non-crystalline state (amorphous) to a crystalline state to reduce the tackiness by cooling the temperature to a predetermined temperature or lower. As a result, the layer has the property of changing from the crystalline state to the amorphous state and increasing the tackiness. By disposing the element 2 on the second temperature-sensitive adhesive layer 7 and heating it to a temperature equal to or higher than the change temperature of the second temperature-sensitive adhesive layer 7, the element 2 is easily held on the transfer substrate 8. It becomes possible. Here, as the second temperature-sensitive adhesive layer 7, a material that changes from a crystalline state to a non-crystalline state to increase the tackiness at a predetermined temperature or higher is given as an example, but the tackiness increases at the predetermined temperature or higher. It only needs to have properties, and there is essentially no difference between a thermoplastic material and a thermosetting material.

The second temperature-sensitive adhesive layer 7 may be formed on the entire main surface of the transfer substrate 8 on which the elements 2 are arranged, or selectively formed at a position corresponding to the elements. You may. However, when the second temperature-sensitive adhesive layer 7 is formed by coating, it is preferable to form it uniformly on the entire surface because the process can be simplified.

The inventor of the present application, as the above-mentioned transfer substrate 8,
PET (PolyEthylene) with a thickness of 100 μm
On the base material 6 which is a terephthalate), when the temperature exceeds about 50 ° C., the adhesive strength is from 0 g / 25 mm to 50
The second temperature-sensitive adhesive layer 20 having a thickness of 20 μm, which increases to 0 g / 25 mm, was used. The relationship between the adhesive force and the temperature of the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7 is schematically shown in FIG. FIG. 2A shows the case of the first temperature-sensitive adhesive layer 4, which is about 50 ° C. when the temperature is increased.
It can be seen that the adhesive strength sharply decreases in the vicinity. Also, FIG.
(B) is the case of the second temperature-sensitive adhesive layer 7, and it can be seen that as the temperature is raised, the adhesive force sharply increases at around 50 ° C.

At the time of transfer, as shown in FIG. 1 (e), a mask which is a plate having an opening 9 in a state where the adhesive sheet 5 and the transfer substrate 8 are superposed in a predetermined positional relationship and pressed against each other. 10 is placed on the adhesive sheet 5, and the adhesive sheet 5 and the transfer substrate 8 are irradiated with infrared rays from the mask 10 side. The radiated infrared light passes through the opening 9 and heats the periphery of the element 2 at a position corresponding to the opening 9. This raises the temperature of the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7 around the element 2 to a temperature equal to or higher than the change temperature, and changes the adhesive force. Thereby, the first temperature-sensitive adhesive layer 4 and the element 2 are
The adhesive force between the second temperature-sensitive adhesive layer 7 and the element 2 is reduced.
Since the adhesive force between and is increased, the element 2 is changed from the state where it is adhered and held on the adhesive sheet 5 to the state where it is adhered and held on the transfer substrate 8.

Therefore, the predetermined portions of the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7 are irradiated with infrared rays through the mask 10 in which the opening 9 is formed in FIG. 1 (e). When the transfer substrate 8 is peeled off from the adhesive sheet 5 in the heated state, the element 2 is transferred onto the second temperature-sensitive adhesive layer 7, as shown in FIG. As described above, the element 2 arranged at a predetermined position can be transferred from the adhesive sheet 5 to the transfer substrate 8. Since the second temperature-sensitive adhesive layer 7 has a slight adhesive force even at room temperature (about 22 ° C.), the element 2 is held on the transfer substrate 8 even if the heating is finished after the transfer.

In the element transfer method to which the present invention is applied as described above, when the element 2 is transferred, the adhesive strength of the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7 is sensed. In order to set the temperature characteristics such that the adhesive strength decreases and the adhesive strength increases when the temperature rises, the element 2 is selectively transferred from the adhesive sheet 5 to the transfer substrate 8 by utilizing the difference in the temperature-sensitive characteristics of the adhesive strength. Can be transcribed.

In the above description, infrared irradiation is shown as an example of the heating method, but partial heating may be performed by irradiating a specific position with a laser beam by a microlens. When it is not necessary to selectively transfer the elements 2, all the elements 2 may be transferred simultaneously by heating the entire adhesive sheet 5 and the transfer substrate 8 instead of heating through the mask 10. . Further, the temperature-sensitive characteristics of the adhesive strength of the first temperature-sensitive adhesive layer 4 and the second temperature-sensitive adhesive layer 7 are reversed to increase the adhesive strength of the first temperature-sensitive adhesive layer 4 due to the temperature rise. However, the adhesive strength of the second temperature-sensitive adhesive layer 7 may decrease due to the temperature increase. In this case, the normal temperature in the above description is equal to or higher than the predetermined temperature, and the heating process is replaced with the cooling process.

That is, in this element transfer method, the element 2 can be peeled from the adhesive sheet 5 and adhered to the transfer substrate 8 only by a heating or cooling process. No members such as an ultraviolet irradiation device, which are required when using an ultraviolet-reactive material, are needed, and the element 2 can be easily transferred with a very simple structure.

Since the transfer process is simple, the element can be positioned easily and surely.
It is possible to perform the transfer of the element with high accuracy without causing the displacement of the transfer element or the like. Further, for example, among the elements to be transferred, the reference element 2 is determined, and by positioning only this element at the predetermined position, the other transfer elements are also collectively positioned at the predetermined position. It is possible to accurately transfer the element without causing the mounting position to shift.

Further, in this element transfer method, since the element 2 is peeled from the adhesive sheet 5 and the element 2 is adhered to the transfer substrate 8 almost at the same time, the element 2 can be transferred in a short time. Therefore, the mounting time can be greatly reduced.

Therefore, according to this element transfer method, the first temperature-sensitive adhesive layer 4 is used to fix the element 2 on the support 3 and the element 2 on the transfer substrate, respectively.
And using the second temperature-sensitive adhesive layer 7, the difference between the temperature-sensitive adhesive property of the first temperature-sensitive adhesive layer 4 and the temperature-sensitive adhesive property of the second temperature-sensitive adhesive layer 7. By using, it becomes possible to efficiently and accurately transfer the element 2.

After the selective transfer of the element 2 described above is performed for each color of red, green and blue (RGB), the element 2 of each color of RGB is transferred again to the same adhesive sheet 5, and RG is transferred.
All the elements are transferred from the adhesive sheet 5 holding all the colors B to the transfer substrate 8. As a result, the RG is transferred onto the transfer substrate 8.
Since the elements for emitting light of B are arranged, it is possible to form a display device for displaying by arranging the elements 2 by making electrical wiring.

[Second Embodiment] Next, a second embodiment to which the present invention is applied will be described in detail below with reference to the drawings. To transfer and arrange the elements, refer to FIG.
As shown in FIG. 1, first, a growth substrate 2 such as a sapphire substrate 2
An element 22 such as a light emitting diode (LED) is mounted on the substrate 1 by a metal organic chemical vapor deposition (MOCVD) method.
organic chemical vapor dep
position) and hydride vapor phase epitaxy (HVP)
E: Hydride Vapor Phase Epi
or the molecular beam epitaxy method (MBE: Mole).
A plurality of them are formed by using a manufacturing method such as a circular beam epitaxy). Here, the growth substrate 1 is a sapphire substrate, but any substrate capable of growing a semiconductor layer to form the element 2 may be used. The element 22 can be applied to any element, and if it is exemplified, a light emitting diode, a semiconductor laser element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element. An element, a micro magnetic element, a micro optical element, etc. can be mentioned.

Next, as shown in FIG. 3B, a pressure-sensitive adhesive sheet 25 having a first temperature-sensitive adhesive layer 24 formed on a sheet-like support 23 is formed into an element 22 of a growth substrate 21. It is pasted and adhered to the surface. As a result, the element 22 is covered and protected by the first temperature-sensitive adhesive layer 24. When the growth substrate 21 and the adhesive sheet 25 are attached to each other, the adhesive sheet 25 may be placed on the growth substrate 21 and then lightly pressed by a laminator or a rubber roller. Further, the support body 23 is not limited to the sheet shape and may be a tape shape.

The first temperature-sensitive adhesive layer 24 is a layer having a property that the adhesive force rapidly changes at a predetermined change temperature. The first temperature-sensitive adhesive layer 24 is melted by heating to a temperature equal to or higher than the change temperature of the first temperature-sensitive adhesive layer 24, and the adhesive force with the element 22 is reduced.
Can be easily peeled from the first temperature-sensitive adhesive layer 24.

As a material for the first temperature-sensitive adhesive layer 24, for example, a thermoplastic material is suitable, and a thermoplastic resin or the like can be used. Here, when the thermoplastic resin is used, by heating the first temperature-sensitive adhesive layer 24 to a temperature equal to or higher than a predetermined change temperature, the thermoplastic resin is plasticized and melted. Temperature sensitive adhesive layer 24
The adhesive force between the element 22 and the element 22 is reduced, and the element 22 can be easily peeled off. As such a thermoplastic resin, for example, hydroxyethyl, polysulfane, etc. are suitable. A thermosetting material may be used as the first temperature-sensitive adhesive layer 24.

The first temperature-sensitive adhesive layer 24 may be formed on the entire main surface of the support 23 on the side where the elements 22 are arranged, or selectively formed at a position corresponding to the elements. You may. However, when the first temperature-sensitive adhesive layer 24 is formed by coating, it is preferable to form it uniformly over the entire surface because the process can be simplified.

The support 23 may be made of any material in consideration of the combination with the element 22 and the like.
Due to the structure of the present invention, a material that exhibits sufficient heat resistance even when the temperature changes due to heating and cooling and that has a low expansion characteristic is used. Then, it is preferable to use a material having good thermal conductivity such as a metal substrate. The support 23 may have a multi-layer structure or a single-layer structure.

The inventor of the present application uses, as the above-mentioned pressure-sensitive adhesive sheet 25, a PET (Poly Ethyl) having a thickness of 100 μm.
When the temperature exceeds about 50 ° C., the adhesive force is 10 on the support 23 which is a ne Terephthalate film.
From 00g / 25mm to 10g / 25mm,
The first temperature-sensitive adhesive layer 24 having a thickness of 20 μm was used.

Thereafter, as shown in FIG. 3C, the element 22 is peeled off from the growth substrate 21 so that the element 22 is held by the first temperature-sensitive adhesive layer 24 of the adhesive sheet 25. When the element 22 is a GaN-based light-emitting diode, the element 22 is separated from the growth substrate 21 by irradiating a laser beam from the back surface side of the growth substrate 21, so that gallium and nitrogen are separated at the interface with the growth substrate 21. Are decomposed and the element 22 becomes the growth substrate 21.
Can be separated relatively easily. Also, the element 2
When 2 is a GaAs-based light emitting diode, the growth substrate 21 is formed by lapping and etching the growth substrate 21.
Can be removed so that only the element 22 remains on the first temperature-sensitive adhesive layer 24.
Any method may be used as long as it can be peeled off and left on the first temperature-sensitive adhesive layer 24.

First temperature-sensitive adhesive layer 24 of adhesive sheet 25
After holding the element 22 thereon, as shown in FIG. 3D, the transfer substrate 2 in which the adhesive layer 31 is formed on the base material 26.
8, the element 22 and the temperature-sensitive adhesive layer 24 are provided in the opening 2 so that the support 23 and the transfer substrate 28 have a desired positional relationship.
9 are arranged so as to face each other through a mask 30 which is a plate on which 9 is formed. As shown in FIG. 4, the openings 29 formed in the mask 30 are designed to be larger than the outer shape of the element 22, and are arranged in a matrix. The mask 30 is a plate having a thickness of about 10 to 30 μm, and the material thereof may be resin such as fluororesin or metal such as stainless steel. Further, it is assumed that a peeling layer which is easily peeled off from the adhesive layer 31 is formed on the surface of the mask 30 which is in contact with the transfer substrate 28 (not shown).

The transfer substrate 28 is a deformable base material, and the one used by the inventor of the present application is a PET film having a thickness of 100 μm used in dicing for separating semiconductor elements. The transfer substrate 28 may be made of any material in consideration of the combination with the element 22 and the like. However, due to the configuration of the present invention, it exhibits sufficient heat resistance even when the temperature is changed by heating and cooling, and it is low. A material made of a material having expansion properties is used. The transfer substrate 28 may have a multi-layer structure or a single-layer structure.

The adhesive layer 31 does not need to be a thermoplastic adhesive whose adhesive strength changes rapidly with temperature changes.
Any adhesive may be used as long as it has an adhesive force of about 500 g / 25 mm at room temperature. Further, the adhesive layer 31 is formed on the transfer substrate 28.
The element 22 may be formed on the entire main surface on the side where the elements 22 are arranged, or may be selectively formed at a position corresponding to the element. However, when the adhesive layer 31 is formed by coating, it is preferable to form it uniformly on the entire surface because the process can be simplified.

At the time of transfer, as shown in FIG.
By attaching the adhesive sheet 25 to the mask 30 and the transfer substrate 28 to the mask 30, the mask 30 is attached to the mask 30.
5 and the transfer substrate 28 are sandwiched. At this time,
By applying pressure to the pressure-sensitive adhesive sheet 25 and the transfer substrate 28 to the extent that a rubber roller is pressed by hand, the transfer substrate 28 enters the opening 29 formed in the mask 30,
The element 22 at a position corresponding to the opening 29 held by the first temperature-sensitive adhesive layer 24 and the adhesive layer 31 come into contact with each other and adhere.

The adhesive sheet 25 is heated to about 50 ° C. with the element 22 and the adhesive layer 31 bonded to each other. At the time of heating, the entire adhesive sheet 25 may be heated using a warm air heater or a hot plate, or only the position corresponding to the opening 29 formed in the mask 30 may be partially heated. As a result, the temperature of the first temperature-sensitive adhesive layer 24 is raised to a temperature equal to or higher than the change temperature, and the adhesive force is reduced. As a result, the adhesive force between the first temperature-sensitive adhesive layer 24 and the element 22 is reduced, and the adhesive force between the adhesive layer 31 and the element 22 does not change. Therefore, the element 22 is bonded to the adhesive sheet 25. The state of being held is changed to the state of being adhered and held on the transfer substrate 28.

Therefore, as shown in FIG. 3E, the element 22 is sandwiched and adhered by the first temperature-sensitive adhesive layer 24 and the adhesive layer 31 through the opening 29 formed in the mask 30. Then
With the first temperature-sensitive adhesive layer 24 heated, the transfer substrate 2
When 8 is peeled off from the mask 30, the element 22 is transferred onto the adhesive layer 31, as shown in FIG. As described above, the element 22 arranged at the predetermined position can be transferred from the adhesive sheet 25 to the transfer substrate 28. Since the adhesive layer 31 has an adhesive force even at room temperature (about 22 ° C.), the element 22 is held on the transfer substrate 28 even if heating is completed after transfer.

In the element transfer method to which the present invention is applied as described above, when the element 22 is transferred, the temperature sensitive characteristic of the adhesive force of the first temperature sensitive adhesive layer 24 is decreased when the temperature rises. In order to set the element 22 from the adhesive sheet 25 to the transfer substrate 28 by utilizing the temperature-sensitive characteristic of adhesive force.
Can be selectively transferred to.

In the above description, a warm air heater or a hot plate is shown as an example of the heating method, but infrared irradiation is performed through the mask 30 or a laser beam is irradiated to a specific position by a microlens. Partial heating may be performed. In addition, the first temperature-sensitive adhesive layer 2
It is also possible to reverse the temperature-sensitive property of the adhesive force of No. 4 and increase the adhesive force of the first temperature-sensitive adhesive layer 24 due to the temperature increase. In this case, the normal temperature in the above description is equal to or higher than the predetermined temperature, and the heating process is replaced with the cooling process.

That is, in the transfer method of this element, the pressure-sensitive adhesive sheet 25 is formed only by the heating or cooling process.
Since the element 22 can be peeled off from the substrate and the element 22 can be adhered to the transfer substrate 28, for example, a suction head or a member such as an ultraviolet irradiation device which is necessary when an ultraviolet reactive material is used is unnecessary. Thus, the element 22 can be easily transferred with a very simple structure.

Since the transfer process is simple, the element can be positioned easily and surely.
It is possible to perform the transfer of the element with high accuracy without causing the displacement of the transfer element or the like. Further, for example, among the elements to be transferred, the reference element 22 is determined and only this element is positioned at a predetermined position, so that other transfer elements are collectively positioned at a predetermined position. It is possible to accurately transfer the element without causing the mounting position to shift.

Further, in this element transfer method, the element 22 is peeled from the adhesive sheet 25 and the element 22 is adhered to the transfer substrate 28 almost at the same time.
2 transfer can be realized, and the mounting time can be greatly shortened.

Therefore, according to this element transfer method, the first temperature-sensitive adhesive layer 24 and the adhesive layer 31 are used to fix the element 22 on the support 23 and the element 22 on the transfer substrate, respectively. By using the temperature-sensitive characteristic of the adhesive force of the first temperature-sensitive adhesive layer 24, it is possible to transfer the element 22 efficiently and accurately.

The selective transfer of the element 22 described above is performed by
After performing each color of red, green, blue (RGB), the elements 22 of each color of RGB are transferred again to the same adhesive sheet 25, and all the elements are transferred from the adhesive sheet 25 holding all RGB colors to the transfer substrate 28. To do. As a result, the elements for emitting RGB light are arranged on the transfer substrate 28, so that it is possible to prepare a display device for displaying by arranging the elements by electrical wiring.

Third Embodiment Next, a third embodiment to which the present invention is applied will be described in detail below with reference to the drawings. To transfer and arrange the elements, refer to FIG.
First, as shown in FIG.
An element 42 such as a light emitting diode (LED) is mounted on the substrate 1 by a metal organic chemical vapor deposition (MOCVD) method.
organic chemical vapor dep
position) and hydride vapor phase epitaxy (HVP)
E: Hydride Vapor Phase Epi
or the molecular beam epitaxy method (MBE: Mole).
A plurality of them are formed by using a manufacturing method such as a circular beam epitaxy). Here, the growth substrate 41 is a sapphire substrate, but any substrate capable of growing a semiconductor layer to form the element 42 may be used. The element 42 can be applied to any element, and if it is exemplified, a light emitting diode, a semiconductor laser element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element. An element, a micro magnetic element, a micro optical element, etc. can be mentioned.

Next, as shown in FIG. 5B, a pressure-sensitive adhesive sheet 45 having a first temperature-sensitive adhesive layer 44 formed on a sheet-shaped support 43 is formed into an element 42 of a growth substrate 41. It is pasted and adhered to the surface. As a result, the element 42 is covered and protected by the first temperature-sensitive adhesive layer 44. When the growth substrate 41 and the adhesive sheet 45 are attached to each other, the adhesive sheet 45 may be placed on the growth substrate 41 and then lightly pressed by a laminator or a rubber roller. Further, the support body 43 is not limited to the sheet shape and may be a tape shape.

The first temperature-sensitive adhesive layer 44 is a layer having a property that the adhesive force rapidly changes at a predetermined change temperature. The first temperature-sensitive adhesive layer 44 is melted by heating to a temperature equal to or higher than the change temperature of the first temperature-sensitive adhesive layer 44, and the adhesive force with the element 42 is reduced.
Can be easily peeled off from the first temperature-sensitive adhesive layer 44.

As a material for the first temperature-sensitive adhesive layer 44, for example, a thermoplastic material is suitable, and a thermoplastic resin or the like can be used. Here, when the thermoplastic resin is used, by heating the first temperature-sensitive adhesive layer 44 to a temperature equal to or higher than a predetermined change temperature, the thermoplastic resin is plasticized and melted. Temperature sensitive adhesive layer 44
The adhesive force between the element 42 and the element 42 is reduced, and the element 42 can be easily peeled off. As such a thermoplastic resin, for example, hydroxyethyl, polysulfane, etc. are suitable. A thermosetting material may be used as the first temperature-sensitive adhesive layer 44.

The first temperature-sensitive adhesive layer 44 may be formed on the entire main surface of the support 43 on the side where the elements 42 are arranged, or selectively formed at a position corresponding to the elements. You may. However, when the first temperature-sensitive adhesive layer 44 is formed by coating, it is preferable to form it uniformly on the entire surface because the process can be simplified.

The support 43 may be made of any material in consideration of the combination with the element 42 and the like.
Due to the structure of the present invention, a material that exhibits sufficient heat resistance even when the temperature changes due to heating and cooling and that has a low expansion characteristic is used. Then, it is preferable to use a material having good thermal conductivity such as a metal substrate. The support 43 may have a multi-layer structure or a single-layer structure.

The inventor of the present application uses, as the above-mentioned pressure-sensitive adhesive sheet 45, a PET (Poly Ethyl) having a thickness of 100 μm.
When the temperature exceeds about 50 ° C., the adhesive force is 10 on the support 43 which is a ne Terephthalate film.
From 00g / 25mm to 10g / 25mm,
The first temperature-sensitive adhesive layer 44 having a thickness of 20 μm was used.

Thereafter, as shown in FIG. 5C, the element 42 is peeled off from the growth substrate 41 so that the element 42 is held by the first temperature-sensitive adhesive layer 44 of the adhesive sheet 45. When the element 42 is a GaN-based light emitting diode, the element 42 is separated from the growth substrate 41 by irradiating the rear surface side of the growth substrate 41 with a laser beam so that gallium and nitrogen are separated at the interface with the growth substrate 41. Are decomposed, and the element 42 becomes the growth substrate 41.
Can be separated relatively easily. Also, the element 4
When 2 is a GaAs light emitting diode, the growth substrate 41 is formed by lapping and etching the growth substrate 41.
Can be removed to leave only the element 42 on the first temperature-sensitive adhesive layer 44.
Any method may be used as long as it can be peeled off and left on the first temperature-sensitive adhesive layer 44.

Next, as shown in FIG. 5D, a transfer substrate 48 having a second temperature-sensitive adhesive layer 47 formed on a base material 46.
Is arranged such that the element 42 and the temperature-sensitive adhesive layer 44 face each other so that the support 43 and the transfer substrate 48 have a desired positional relationship, and the surface of the pressure-sensitive adhesive sheet 45 on which the element 42 is held. Laminate and bond. As a result, the element 4 is formed by the first temperature-sensitive adhesive layer 44 and the second temperature-sensitive adhesive layer 47.
2 is sandwiched.

The transfer substrate 48 may be made of any material in consideration of the combination with the element 42, etc., but it shows sufficient heat resistance even with temperature change due to heating and cooling due to the constitution of the present invention. Also, a material made of a material having a low expansion property is used. Then, it is preferable to use a material having good thermal conductivity such as a metal substrate. Also,
The transfer substrate 48 may have a multi-layer structure or a single-layer structure.

The second temperature-sensitive adhesive layer 47 is an amorphous state when cooled to a predetermined temperature or lower.
From the crystalline state to the crystalline state to lower the tackiness, and when heated to a temperature higher than a predetermined temperature, the crystalline state changes to the non-crystalline state to increase the tackiness. By disposing the element 42 on the second temperature-sensitive adhesive layer 47 and heating it to a temperature equal to or higher than the changing temperature of the second temperature-sensitive adhesive layer 47, the element 42 is easily held on the transfer substrate 48. It becomes possible. Here, as the second temperature-sensitive adhesive layer 47,
Although the material whose adhesiveness increases by changing from the crystalline state to the amorphous state at a predetermined temperature or higher is given as an example, it may have a property that the adhesiveness increases at a predetermined temperature or higher, and even a thermoplastic material may be used. There is essentially no difference between thermosetting materials.

The second temperature-sensitive adhesive layer 47 may be formed on the entire main surface of the transfer substrate 48 on which the elements 42 are arranged, or selectively formed at a position corresponding to the elements. You may. However, when the second temperature-sensitive adhesive layer 47 is formed by coating, it is preferable to form it uniformly on the entire surface because the process can be simplified.

The inventor of the present application uses, as the above-mentioned transfer substrate 48, a PET (Poly Ethyl) having a thickness of 100 μm.
When the temperature exceeds about 50 ° C., the adhesive force is 0 g / 25 mm on the base material 46 which is a terephthalate).
The second temperature-sensitive adhesive layer 47 having a thickness of 20 μm was used.

At the time of transfer, as shown in FIG. 6 (e), the pressure-sensitive adhesive sheet 45 and the transfer substrate 48 are heated in a state where the pressure-sensitive adhesive sheet 45 and the transfer substrate 48 are superposed and pressure-bonded in a predetermined positional relationship. 60 by hot plate 52
Heat to ~ 70 degrees. As a result, the temperature of the first temperature-sensitive adhesive layer 44 and the second temperature-sensitive adhesive layer 47 is raised to a temperature equal to or higher than the change temperature to change the adhesive force. Since the adhesive force between the first temperature-sensitive adhesive layer 44 and the element 42 is reduced and the adhesive force between the second temperature-sensitive adhesive layer 47 and the element 42 is increased,
The element 42 is in a state of being adhered and held on the transfer substrate 48 from a state of being adhered and held by the adhesive sheet 45.

Therefore, as shown in FIG. 6 (e), the adhesive sheet 4
5 and the transfer substrate 48 by the hot plate 52 for heating, the first temperature-sensitive adhesive layer 44 and the second temperature-sensitive adhesive layer 47.
The transfer substrate 48 is heated to about 60 to 70 degrees.
When is peeled off from the adhesive sheet 45, the element 42 is transferred onto the second temperature-sensitive adhesive layer 47, as shown in FIG. Since the second temperature-sensitive adhesive layer 47 has a slight adhesive force even at room temperature (about 22 ° C.), the element 42 is held on the transfer substrate 48 even if heating is completed after transfer.

A case will be described in which the element 42 transferred and arranged on the transfer substrate 48 is inspected, and the element 42 having a malfunction or a defective appearance is found. FIG. 6G is a schematic diagram showing a method of selectively removing only the defective element 42 from the transfer substrate 48. The transfer substrate 48 is brought into contact with the cooling plate 53 to be cooled, and the defective element 42 is removed from the second temperature-sensitive adhesive layer 47 by using the selective adsorption device 54. Cooling water of about 0 ° C. circulates inside the cooling plate 53 (not shown), and the entire transfer substrate 48 can be cooled to about 0 ° C.

As the temperature-sensitive characteristic of the adhesive force of the second temperature-sensitive adhesive layer 47, one that decreases in temperature and decreases in adhesive force is selected.
When 8 is cooled, the adhesive force between the second temperature-sensitive adhesive layer 47 and the element 42 decreases. Therefore, the defective element 42 is adsorbed to the selective adsorption device 54, and the selective adsorption device 54 is attached to the transfer substrate 4.
The defective element 42 is removed by moving away from 8. As the selective adsorption device 54, a vacuum adsorption device or a rod-shaped member whose tip is coated with an adhesive is conceivable, but any type of device may be used as long as it has a structure capable of holding the element 42 at the tip.

Next, as shown in FIG. 6H, the good element 4 is placed at the position on the transfer substrate 48 where the defective element 42 is removed.
2 ′ is arranged using the selective adsorption device 54, and the transfer substrate 48
Is heated by the heating hot plate 52 to increase the adhesive force of the second temperature-sensitive adhesive layer 47, and the element 42 ′ of the selective adsorption device 54 is released to transfer the element 42 ′ to the transfer substrate 48.
Hold it on. At this time, when the suction and release of the element 42 ′ can be controlled on the side of the selective adsorption device 54, such as when a vacuum adsorption device is used as the selective adsorption device 54,
Even if the transfer substrate 48 is not heated, the element 42 ′ can be held on the transfer substrate 48 by opening the adsorption of the selective adsorption device 54.

In the element transfer method to which the present invention is applied as described above, when the element 42 is arranged on the transfer substrate 48, the temperature-sensitive characteristic of the adhesive force of the second temperature-sensitive adhesive layer 47 is set to the temperature. Since the adhesive force is set to increase when rising, the temperature sensitive characteristic of the adhesive force is used to transfer the element 42 to the transfer substrate 4.
8 can be selectively arranged.

Further, the temperature-sensitive characteristics of the adhesive strength of the first temperature-sensitive adhesive layer 44 and the second temperature-sensitive adhesive layer 47 are reversed, and the first temperature-sensitive adhesive layer 44 is adhered by the temperature rise. Power increases,
The adhesive strength of the second temperature-sensitive adhesive layer 7 may decrease due to the temperature increase. In this case, the normal temperature in the above description is equal to or higher than the predetermined temperature, and the heating process and the cooling process are reversed.

Since the transfer process is simple, the element can be positioned easily and surely.
It is possible to perform the transfer of the element with high accuracy without causing the displacement of the transfer element or the like. In addition, for example, among the elements to be transferred, by determining the reference element 42 and positioning only this element at the predetermined position, the other transfer elements are also collectively positioned at the predetermined position. It is possible to accurately transfer the element without causing the mounting position to shift.

Further, even when the defective element 42 is found, the adhesive force of the second temperature-sensitive adhesive layer 47 can be changed by cooling and heating the transfer substrate 48. It is possible to easily remove the defective element 42 and dispose the favorable element 42 ′ by using 54. Accordingly, even after the element 42 is transferred and arranged on the transfer substrate 48, it is possible to easily replace the defective element 42 with a good element. Therefore, a display device that displays by arranging the elements It is possible to reduce the defective rate of.

The present invention is not limited to the above description and can be appropriately modified within the scope of the present invention.

[0089]

EFFECTS OF THE INVENTION When transferring an element, the temperature-sensitive characteristics of the adhesive strength of the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer are increased when the temperature rises and those when the temperature rises. Since it is set to one, the element can be selectively transferred from the adhesive tape to the transfer substrate by utilizing the difference in the temperature-sensitive property of the adhesive force.

Since the transfer process is simple, the element can be positioned easily and surely.
It is possible to perform the transfer of the element with high accuracy without causing the displacement of the transfer element or the like. Further, for example, among the elements to be transferred, by deciding a reference element and positioning only this element at a predetermined position, other transfer elements are also collectively positioned at a predetermined position. It is possible to transfer the element with high accuracy without causing a displacement of the mounting position.

Further, in this element transfer method, since the element is peeled off from the adhesive tape and the element 2 is adhered to the transfer substrate almost at the same time, the element transfer can be realized in a short time, and mounting The time can be greatly shortened.

Further, according to this element transfer method, the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer are used for fixing the element on the tape and the element on the transfer substrate, respectively. , By utilizing the difference between the temperature-sensitive property of the adhesive force of the first temperature-sensitive adhesive layer and the temperature-sensitive property of the adhesive force of the second temperature-sensitive adhesive layer, efficient and accurate transfer of the element Is possible.

Also, when a defective element is found,
Since the adhesive strength of the second temperature-sensitive adhesive layer can be changed by cooling and heating the transfer substrate, it is possible to easily remove defective elements and arrange good elements using the selective adsorption device. It is possible. This makes it possible to easily replace a defective element with a good element even after transferring and arranging the element on the transfer substrate.
It is possible to reduce the defective rate of a display device that displays by arranging elements.

[Brief description of drawings]

FIG. 1 is a process drawing showing a device transfer method according to an embodiment of the present invention.

FIG. 2 is a diagram schematically showing the relationship between the temperature and the adhesive force of a temperature-sensitive adhesive layer.

FIG. 3 is a process drawing showing the device transfer method according to the second embodiment of the present invention.

FIG. 4 is a plan view showing an example of a mask and openings used in the second embodiment of the present invention.

FIG. 5 is a process drawing showing the method of transferring the device according to the third embodiment of the present invention, which is the first half of the process.

FIG. 6 is a process chart showing the device transfer method in the third embodiment of the present invention, which is the latter half of the process.

7A and 7B are views showing a transfer method of an element using a conventional suction head and an adhesive layer, FIG. 7A shows an element arranged on a substrate, and FIG. The handling of the device is shown.

[Explanation of symbols]

1,21,41 Growth substrate 2, 22, 42 elements 3,23,43 Support 4, 24, 44 First temperature-sensitive adhesive layer 5, 25, 45 adhesive sheet 6, 26, 46 Base material 7,47 Second temperature-sensitive adhesive layer 8, 28, 48 Transfer substrate 9, 29 openings 10, 30 mask 31 Adhesive layer 52 Hot plate for heating 53 Cooling plate 54 Selective adsorption device 61 base substrate 62 Adhesive layer 63 elements 64 suction head 65 board 66 Adhesive layer

Claims (16)

[Claims] 1. A step of attaching a first support having elements arranged and held by a first temperature-sensitive adhesive layer and a second support having a second temperature-sensitive adhesive layer, In the state where the element and the second temperature-sensitive adhesive layer are in contact with each other, the temperature of the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer is changed to change the temperature of the first temperature-sensitive adhesive layer. And a step of separating the element from the adhesive layer, separating the first support and the second support, and transferring the element onto the second support. Device transfer method. 2. The adhesive force of the second temperature-sensitive adhesive layer is the adhesive force of the first temperature-sensitive adhesive layer when the element can be peeled from the first temperature-sensitive adhesive layer. The method for transferring an element according to claim 1, wherein the transfer method is larger than the above. 3. The first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer have an inverse correlation in the change in adhesive force when the temperature changes. Transfer method of the device. 4. The temperature change of the first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer is a partial temperature change of a position corresponding to the predetermined element, and the predetermined element 2. The method for transferring an element according to claim 1, wherein only the element is transferred onto the second support. 5. The first temperature-sensitive adhesive layer and the first temperature-sensitive adhesive layer are obtained by irradiating infrared rays through a mask in which an opening is formed at a position corresponding to a predetermined element because the temperature change is a temperature increase. The element transfer method according to claim 4, wherein the second temperature-sensitive adhesive layer is partially heated. 6. The first temperature-sensitive adhesive layer and the second temperature-sensitive adhesive layer by irradiating a laser beam to a position corresponding to a predetermined element when the temperature change is a temperature increase. The method for transferring an element according to claim 4, wherein the element is partially heated. 7. The element can be peeled from the second temperature-sensitive adhesive layer by changing the temperature of the second temperature-sensitive adhesive layer after the element is transferred onto the second support. 2. The method of transferring an element according to claim 1, further comprising: a step of: and a step of removing the predetermined element in a state where the element can be peeled from the second temperature-sensitive adhesive layer. 8. The method of transferring an element according to claim 7, wherein the predetermined removal of the element is performed by using a vacuum suction device. 9. The element transfer method according to claim 7, wherein another element is arranged at a position where the predetermined element is removed from the second support. 10. The arrangement of the other element is performed by changing the temperature of the second temperature-sensitive adhesive layer so that the other element can be bonded to the second temperature-sensitive adhesive layer. The method of transferring an element according to claim 9. 11. The element is any one of a light emitting diode, a semiconductor laser element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, and a micro optical element. The method for transferring an element according to claim 1, wherein 12. A step of adhering a first support, on which elements are arranged and held by a first temperature-sensitive adhesive layer, to one surface of a mask in which an opening is formed, and the other of the mask. A step of attaching a second support provided with an adhesive layer to the surface, pressing the first support and the second support, and the element and the position of the position corresponding to the opening. A step of contacting with an adhesive layer, and in a state where the element and the adhesive layer are in contact with each other, the temperature of the first temperature-sensitive adhesive layer is changed to change the element from the first temperature-sensitive adhesive layer. And a step of separating the first support and the second support and transferring the element onto the second support. 13. The element according to claim 12, wherein the first temperature-sensitive adhesive layer has a lower adhesive force at a predetermined temperature or higher, and the temperature change is a temperature increase. Transfer method. 14. The method for transferring an element according to claim 13, wherein the temperature rise is caused by heating the entire surface of the first support. 15. The method of transferring an element according to claim 13, wherein the temperature rise is caused by partial heating of a position of the first temperature-sensitive adhesive layer corresponding to the opening. 16. The element is any one of a light emitting diode, a semiconductor laser element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, and a micro optical element. 13. The method for transferring an element according to claim 12, wherein: