JP2003259657A - Power converter - Google Patents
Power converterInfo
- Publication number
- JP2003259657A JP2003259657A JP2002060977A JP2002060977A JP2003259657A JP 2003259657 A JP2003259657 A JP 2003259657A JP 2002060977 A JP2002060977 A JP 2002060977A JP 2002060977 A JP2002060977 A JP 2002060977A JP 2003259657 A JP2003259657 A JP 2003259657A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- element group
- heat sink
- cooling
- thermal resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、モータなどを駆動
するインバータ装置、無停電電源装置等の半導体素子を
使用した電力変換装置に係り、特に半導体素子を効果的
に冷却することができる電力変換装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power converter using semiconductor elements such as an inverter device for driving a motor and an uninterruptible power supply, and more particularly to a power converter capable of effectively cooling semiconductor elements. Regarding the device.
【０００２】[0002]
【従来の技術】従来の電力変換装置としては、図４に示
す商用電源からある設定された周波数の電圧を出力する
インバータ装置が知られている。このインバータ装置
は、３相交流電源１から出力される交流電圧を直流電圧
に変換するダイオード整流器２と、このダイオード整流
機２の出力側に接続された直流平滑用コンデンサ３と、
この直流平滑用コンデンサ３で平滑化された直流電圧が
入力されて３相交流電圧に変換するインバータ回路４と
を有する主回路部を備えており、このインバータ回路４
から出力される３相交流電圧が交流モータなどの負荷５
に供給される。2. Description of the Related Art As a conventional power conversion device, an inverter device is known which outputs a voltage of a set frequency from a commercial power supply shown in FIG. This inverter device includes a diode rectifier 2 for converting an AC voltage output from a three-phase AC power supply 1 into a DC voltage, and a DC smoothing capacitor 3 connected to an output side of the diode rectifier 2.
The inverter circuit 4 is provided with an inverter circuit 4 that receives the DC voltage smoothed by the DC smoothing capacitor 3 and converts the DC voltage into a three-phase AC voltage.
The three-phase AC voltage output from the
Is supplied to.
【０００３】ここで、インバータ回路４は、低損失のＩ
ＧＢＴ（Insulated Gate Bipolar Transister)などの２
つの半導体スイッチング素子６ａ及び６ｂを直列に接続
し、各半導体スイッチング素子６ａ及び６ｂに夫々逆並
列にダイオード７ａ及び７ｂを接続した３組の直列回路
８Ａ、８Ｂ及び８Ｃを並列に接続して構成され、各直列
回路８Ａ〜８Ｃの半導体スイッチング素子６ａ及び６ｂ
の接続点から３相交流電圧が負荷５に出力される。Here, the inverter circuit 4 has a low loss I
2 such as GBT (Insulated Gate Bipolar Transister)
Three semiconductor switching elements 6a and 6b are connected in series, and three sets of series circuits 8A, 8B and 8C in which diodes 7a and 7b are connected in antiparallel to the respective semiconductor switching elements 6a and 6b are connected in parallel. , Semiconductor switching elements 6a and 6b of each series circuit 8A to 8C
A three-phase AC voltage is output to the load 5 from the connection point.
【０００４】上記構成を有するインバータ装置の運転時
には、ダイオード整流器２、半導体スイッチング素子６
ａ，６ｂ、ダイオード７ａ，７ｂなどの半導体素子は、
自身の発生損失（定常損失やスイッチング損失）による
温度上昇を抑制するため、ヒートシンク等の冷却体を必
ず接続する必要がある。一般に、ヒートシンクの温度上
昇値ΔＴは、熱抵抗値Ｒ（℃／Ｗ）と熱源（ここでは半
導体素子）の発生損失Ｐ（Ｗ）とから下記（１）式で表
される。During operation of the inverter device having the above structure, the diode rectifier 2 and the semiconductor switching element 6 are operated.
The semiconductor elements such as a, 6b and diodes 7a, 7b are
In order to suppress the temperature rise due to its own generated loss (steady loss and switching loss), it is necessary to connect a cooling body such as a heat sink. Generally, the temperature rise value ΔT of the heat sink is represented by the following equation (1) from the thermal resistance value R (° C./W) and the generated loss P (W) of the heat source (here, the semiconductor element).
【０００５】
ΔＴ＝Ｒ×Ｐ …………（１）
この（１）式より、ダイオード整流器２の発生損失をＰ
REC （Ｗ）、インバータ回路４の発生損失をＰ
INV （Ｗ）とすると、必要とされるヒートシンクの熱抵
抗値Ｒ（℃／Ｗ）は、ヒートシンク内の温度勾配がない
理想状態で下記（２）式で表すことができる。ΔT = R × P (1) From the equation (1), the generated loss of the diode rectifier 2 is P
REC (W), the generated loss of the inverter circuit 4 is P
Letting INV (W), the required heat resistance value R (° C./W) of the heat sink can be expressed by the following equation (2) in an ideal state where there is no temperature gradient in the heat sink.
【０００６】
Ｒ＝ΔＴPE／（ＰREC ＋ＰINV ） …………（２）
ここで、ΔＴPEはヒートシンクの許容温度上昇値であ
る。また、概略ヒートシンクの熱抵抗値Ｒとヒートシン
クの体積は反比例し、またヒートシンク冷却用のファン
の風速や風量を大きくすると熱抵抗値Ｒは小さくなる。R = ΔT PE / (P REC + P INV ) (2) Here, ΔT PE is the allowable temperature rise value of the heat sink. Further, the thermal resistance value R of the heat sink is roughly inversely proportional to the volume of the heat sink, and the thermal resistance value R becomes smaller when the wind speed or the air volume of the fan for cooling the heat sink is increased.
【０００７】また、一般にインバータ装置において、あ
る程度の容量以上のクラスでは、装置を小型化にするこ
と、及びインバータ回路４と直流平滑用コンデンサ３間
の配線インダクタンスを小さくする必要性があることな
どから、インバータ装置内の部品配置は概ね図５及び図
６に示すように、複数の直流平滑用コンデンサ３、ヒー
トシンク９及び複数の冷却ファン１０ａ，１０ｂの順で
配置され、またダイオード整流器２及びインバータ回路
４はヒートシンク９上で冷却ファン１０ａ，１０ｂと対
向するように並列に配置することが多い。In general, in an inverter device, it is necessary to reduce the size of the device and to reduce the wiring inductance between the inverter circuit 4 and the DC smoothing capacitor 3 in a class of a certain capacity or more. As shown in FIG. 5 and FIG. 6, the components in the inverter device are arranged in the order of a plurality of DC smoothing capacitors 3, a heat sink 9 and a plurality of cooling fans 10a and 10b, and a diode rectifier 2 and an inverter circuit. 4 is often arranged in parallel on the heat sink 9 so as to face the cooling fans 10a and 10b.
【０００８】[0008]
【発明が解決しようとする課題】一般に、ヒートシンク
の放熱効果を大きくするためには、ダイオード整流器２
やインバータ回路４等の熱源は、ヒートシンクの中央部
付近に設置することが望ましい。また冷却ファン１０
ａ，１０ｂの通風量を大きくするためには、その通風経
路において通風抵抗が小さい方が望ましい。Generally, in order to enhance the heat radiation effect of the heat sink, the diode rectifier 2 is used.
It is desirable that the heat source such as the inverter circuit 4 be installed near the center of the heat sink. In addition, the cooling fan 10
In order to increase the ventilation amount of a and 10b, it is desirable that the ventilation resistance is small in the ventilation path.
【０００９】しかしながら、上記図５に示すように通常
のインバータ装置では、ヒートシンク９の前に冷却ファ
ン１０ａ，１０ｂの風を遮るように直流平滑用コンデン
サ３が配置されていると共に、ダイオード整流器２及び
インバータ回路４は素子の設置面積上、図５に示すよう
に、ヒートシンク９に対して偏った位置に設置せざるを
得ない。さらに、ダイオード整流器２とインバータ回路
４との発生損失比（Ｐ REC ：ＰINV ）は１：３〜１：６
程度であるため、ヒートシンク９内の温度勾配が非常に
大きくなり、例えば図５及び図６のインバータ回路直下
のＡ点と、ヒートシンク９の冷却ファン１０ａとは反対
側の端部における下方のＢ点付近では、数１０℃の温度
差を発生することとなる。そのため、実際のヒートシン
ク９の設計では、前記（２）式で計算した熱抵抗値Ｒよ
り十分小さいもの（体積がより大きくなる）や、より強
力な冷却ファン１０ａ，１０ｂを選定する必要があると
いう未解決の課題がある。However, as shown in FIG.
In the inverter device, the cooling fan is installed in front of the heat sink 9.
DC smoothing condenser to block the wind from
And the diode rectifier 2 and
The inverter circuit 4 is shown in FIG.
In addition, it must be installed in a position that is biased with respect to the heat sink 9.
I don't get it. Furthermore, the diode rectifier 2 and the inverter circuit
Loss ratio with 4 (P REC: PINV) Is 1: 3 to 1: 6
The temperature gradient in the heat sink 9 is very
It becomes larger, for example, directly below the inverter circuit of FIGS. 5 and 6.
The point A is opposite to the cooling fan 10a of the heat sink 9.
The temperature of several tens of degrees Celsius near the lower point B at the side end
A difference will be generated. Therefore, the actual heat sink
In the design of Q9, the thermal resistance value R calculated by the above equation (2)
Small enough (larger volume) or stronger
It is necessary to select powerful cooling fans 10a and 10b.
There is an unsolved problem called.
【００１０】そこで、本発明は、上記従来例の未解決の
課題に着目してなされたものであり、ヒートシンク内の
温度勾配を小さくして前記（２）式で計算した熱抵抗値
Ｒに対応した冷却体を適用することができる電力変換装
置を提供することを目的としている。Therefore, the present invention has been made by paying attention to the unsolved problem of the above-mentioned conventional example, and corresponds to the thermal resistance value R calculated by the equation (2) by reducing the temperature gradient in the heat sink. It is an object of the present invention to provide a power conversion device to which the above cooling body can be applied.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に係る電力変換装置は、半導体素子を用い
て電力変換を行って所定周波数の電力を出力する電力変
換装置において、複数の半導体素子を用いて構成される
主回路部を有し、前記半導体素子を発生損失が少ない第
１の半導体素子群と、発生損失が多い第２の半導体素子
群との少なくとも２つに分別し、前記第１の半導体素子
群及び第２の半導体素子群を、夫々熱抵抗値が異なる第
１及び第２の冷却体に個別に設置するようにしたことを
特徴としている。In order to achieve the above object, a power converter according to a first aspect of the present invention is a power converter that performs power conversion using a semiconductor element and outputs power of a predetermined frequency. Of the semiconductor element, the semiconductor element is divided into at least two groups, a first semiconductor element group having a small generated loss and a second semiconductor element group having a large generated loss. The first semiconductor element group and the second semiconductor element group are individually installed on the first and second cooling bodies having different thermal resistance values, respectively.
【００１２】また、請求項２に係る電力変換装置は、請
求項１に係る発明において、前記第１及び第２の冷却体
は、個別の冷却ファンを有し、当該冷却ファンの通風路
が並列となるように配置されていることを特徴としてい
る。さらに、請求項３に係る電力変換装置は、半導体素
子を用いて電力変換を行って所定周波数の電力を出力す
る電力変換装置において、複数の半導体素子及び直流平
滑用コンデンサを用いて構成される主回路部を有し、前
記半導体素子を発生損失が少ない第１の半導体素子群
と、発生損失が多い第２の半導体素子群との少なくとも
２つに分別し、前記第１の半導体素子群及び第２の半導
体素子群を、冷却ファンを有し且つ熱抵抗値が異なって
並列に配設された第１及び第２の冷却体に夫々設置し、
且つ前記直流平滑用コンデンサを、前記第１の冷却体の
冷却ファンとは反対側に設置するようにしたことを特徴
としている。According to a second aspect of the present invention, in the power conversion device according to the first aspect, the first and second cooling bodies have individual cooling fans, and the ventilation paths of the cooling fans are parallel to each other. It is characterized by being arranged so that. Further, the power conversion device according to claim 3 is a power conversion device that performs power conversion using a semiconductor element and outputs power of a predetermined frequency, and is configured by using a plurality of semiconductor elements and a DC smoothing capacitor. The semiconductor device is divided into at least two first semiconductor element groups having a circuit portion and less generated loss, and second semiconductor element groups having more generated loss. The second semiconductor element group is installed in each of the first and second cooling bodies which have a cooling fan and have different thermal resistance values and are arranged in parallel,
In addition, the DC smoothing capacitor is arranged on the side of the first cooling body opposite to the cooling fan.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を図面
について説明する。図１は本発明を前述した従来例と同
様の図３に示すインバータ装置に適用した場合の第１の
実施形態を示す平面図、図２は図１の側面図であり、図
中、１１は基板であって、この基板１１上に熱抵抗値の
異なる冷却体としての第１及び第２のヒートシンク１２
Ａ及び１２Ｂが並列に配設されている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a first embodiment when the present invention is applied to the inverter device shown in FIG. 3 which is similar to the above-mentioned conventional example, and FIG. 2 is a side view of FIG. A substrate, on which a first and a second heat sink 12 as cooling bodies having different thermal resistance values are provided.
A and 12B are arranged in parallel.
【００１４】ここで、第１及び第２のヒートシンク１２
Ａ及び１２Ｂは基板１１の一端側に例えば吸い込み方式
の冷却ファン１３Ａ及び１３Ｂを有し、第１のヒートシ
ンク１２Ａにはその上面に発生損失ＰREC が少ない主回
路部を構成するダイオード整流器２が設置され、第２の
ヒートシンク１２Ｂにはその上面には発生損失ＰINVが
ダイオード整流器２に対してその３倍〜６倍程度多い主
回路部を構成するインバータ回路４が設置されている。
そして、各ヒートシンク１２Ａ及び１２Ｂの熱抵抗値Ｒ
A 及びＲB は、前記（１）式に基づいて算出される値に
近い値に設定されている。Here, the first and second heat sinks 12
A and 12B have, for example, suction-type cooling fans 13A and 13B on one end side of the substrate 11, and the diode rectifier 2 that constitutes a main circuit portion with a small loss P REC is installed on the upper surface of the first heat sink 12A. On the upper surface of the second heat sink 12B, the inverter circuit 4 constituting the main circuit portion in which the generated loss P INV is 3 to 6 times larger than that of the diode rectifier 2 is installed.
Then, the heat resistance value R of each heat sink 12A and 12B
A and R B are set to values close to the values calculated based on the equation (1).
【００１５】一方、基板１１の他端側には主回路部を構
成する４つの直流平滑用コンデンサ３が２つずつ第１及
び第２のヒートシンク１２Ａ及び１２Ｂの冷却ファン１
３Ａ及び１３Ｂとは反対側に対向して配置されている。
この第１の実施形態によると、インバータ装置の主回路
部を構成する半導体素子のうち発生損失が少ないダイオ
ード整流器２を熱抵抗値が大きい第１のヒートシンク１
２Ａに設置し、発生損失が多いインバータ回路４を熱抵
抗値が小さい第２のヒートシンク１２Ｂに設置するよう
にしているので、第１及び第２のヒートシンク１２Ａ及
び１２Ｂ内での温度勾配を小さくすることができ、これ
ら第１及び第２のヒートシンク１２Ａ及び１２Ｂの熱抵
抗値ＲA 及びＲB を前記（１）式に基づいて算出される
値に近い値に設定することができ、従来のヒートシンク
に対して熱抵抗値が大きいもの即ち体積的に小さいヒー
トシンクを適用することができ、インバータ装置の小型
化、低コスト化を実現することができる。On the other hand, on the other end side of the substrate 11, four DC smoothing capacitors 3 constituting the main circuit section are provided, two cooling capacitors 1 for the first and second heat sinks 12A and 12B.
3A and 13B are arranged opposite to each other.
According to the first embodiment, the diode rectifier 2 of the semiconductor elements constituting the main circuit portion of the inverter device, which has a small loss, is connected to the first heat sink 1 having a large thermal resistance value.
2A, and the inverter circuit 4 with a large amount of generated loss is installed on the second heat sink 12B having a small thermal resistance value, so that the temperature gradient in the first and second heat sinks 12A and 12B is reduced. It is possible to set the thermal resistance values R A and R B of the first and second heat sinks 12A and 12B close to the values calculated based on the equation (1). On the other hand, a heat sink having a large thermal resistance value, that is, a heat sink having a small volume can be applied, and the inverter device can be downsized and the cost can be reduced.
【００１６】次に、本発明の第２の実施形態を図３につ
いて説明する。この第２の実施形態は、発生損失の大き
い方の冷却ファンの通風路を確保するするようにしたも
のである。すなわち、第２の実施形態では、図３に示す
ように、前述した第１の実施形態における図１の構成に
おいて、高さが高く冷却ファンの通風路を遮る４つの直
流平滑用コンデンサ３を少ない発生損失ＰREC のダイオ
ード整流器２を設置した第１のヒートシンク１２Ａの冷
却ファン１３Ａとは反対側に集めて設置するようにした
ことを除いては図１と同様の構成を有し、図１との対応
部分には同一符号を付し、その詳細説明はこれを省略す
る。Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the ventilation passage of the cooling fan having the larger generated loss is secured. That is, in the second embodiment, as shown in FIG. 3, in the configuration of FIG. 1 in the above-described first embodiment, the number of the four DC smoothing capacitors 3 that are high and block the ventilation passage of the cooling fan is small. It has the same configuration as that of FIG. 1 except that the first heat sink 12A having the diode rectifier 2 having the generated loss P REC is installed on the side opposite to the cooling fan 13A. Corresponding parts are designated by the same reference numerals, and detailed description thereof will be omitted.
【００１７】この第２の実施形態によると、多い発生損
失ＰINV のインバータ回路４を設置した第２のヒートシ
ンク１２Ｂについてはその冷却ファン１３Ｂから吹き出
される送風が遮られることなく、通風抵抗値の小さい良
好な通風路が形成されるので、この冷却ファン１３Ｂか
らの送風によってインバータ回路４を効果的に冷却する
ことができる。この結果、第２のヒートシンク１２Ｂの
熱抵抗値ＲA を第１の実施形態に比較して（１）式で算
出される熱抵抗値により近づけることができ、第１の実
施形態に比較してさらに熱抵抗の大きいヒートシンクを
適用することができ、さらなる小型化を図ることができ
る。According to the second embodiment, with respect to the second heat sink 12B in which the inverter circuit 4 having a large amount of generated loss P INV is installed, the ventilation air blown from the cooling fan 13B is not blocked and the ventilation resistance value is Since a small and favorable ventilation path is formed, the inverter circuit 4 can be effectively cooled by the air blown from the cooling fan 13B. As a result, the thermal resistance value R A of the second heat sink 12B can be made closer to the thermal resistance value calculated by the equation (1) as compared with the first embodiment, and compared with the first embodiment. Further, a heat sink having a large thermal resistance can be applied, and further miniaturization can be achieved.
【００１８】なお、上記第１及び第２の実施形態におい
ては、本発明をインバータ装置に適用した場合について
説明したが、これに限定されるものではなく、無停電電
源装置（ＵＰＳ）、アクティブフィルタなどの電力用半
導体素子を用いる全ての電力変換装置に対して本発明を
適用することができる。要は電力用半導体素子を発生損
失が少ない第１の半導体素子群と、発生損失が多い第２
の半導体素子群とに分別し、これらを夫々熱抵抗値の異
なる冷却体に設置するようにすれば良いものである。In the first and second embodiments, the case where the present invention is applied to the inverter device has been described, but the present invention is not limited to this, and an uninterruptible power supply (UPS) and an active filter are provided. The present invention can be applied to all power conversion devices using power semiconductor elements such as. In short, the first semiconductor element group that generates less power loss and the second semiconductor element that generates more power loss
It is only necessary to separate the semiconductor elements into the semiconductor element group and install them in the cooling bodies having different thermal resistance values.
【００１９】また、上記第１及び第２の実施形態におい
ては、電力変換装置を構成する複数の半導体素子を第１
の半導体素子群及び第２の半導体素子群に分け、これら
を第１のヒートシンク１２Ａ及び第２のヒートシンク１
２Ｂに設置した場合について説明したが、これに限定さ
れるものではなく、複数の半導体素子を発生損失が異な
る３つ以上の半導体素子群に分別し、これらについて個
別に熱抵抗値の異なる３つ以上の冷却体に設置するよう
にしてもよい。In addition, in the first and second embodiments, the plurality of semiconductor elements constituting the power conversion device are the first.
Of the semiconductor element group and the second semiconductor element group of the first heat sink 12A and the second heat sink 1
Although the case of being installed in 2B has been described, the present invention is not limited to this, and a plurality of semiconductor elements are separated into three or more semiconductor element groups having different generated losses, and these are individually divided into three groups having different thermal resistance values. You may make it install in the said cooling body.
【００２０】[0020]
【発明の効果】以上説明したように、請求項１又は２に
係る発明によれば、電力変換装置の主回路部を構成する
複数の半導体素子を発生損失の少ない第１の半導体素子
群及び発生損失の多い第２の半導体素子群に分別し、第
１の半導体素子群及び第２の半導体素子群を夫々熱抵抗
値の異なる冷却体に設置するようにしたので、冷却体内
の温度勾配を従来例に比較して小さくすることが可能と
なり、従来の冷却体に比較して熱抵抗値が大きい冷却体
すなわち体積的に小さい冷却体を適用することができ、
電力変換装置の小型化及び低コスト化を実現することが
できるという効果が得られる。As described above, according to the invention of claim 1 or 2, a plurality of semiconductor elements forming the main circuit portion of the power conversion device are generated, and the first semiconductor element group and the generation are small. Since the first semiconductor element group and the second semiconductor element group are separated into the second semiconductor element group having a large loss and the first semiconductor element group and the second semiconductor element group are respectively installed in the cooling bodies having different thermal resistance values, the temperature gradient in the cooling body is reduced to the conventional one. It is possible to make it smaller than the example, and it is possible to apply a cooling body having a large thermal resistance value compared to the conventional cooling body, that is, a cooling body having a small volume,
The effect that the downsizing and the cost reduction of the power conversion device can be realized is obtained.
【００２１】また、請求項３に係る発明によれば、冷却
ファンの送風を遮る直流平滑用コンデンサを発生損失が
少ない第１の半導体素子群を設置した第１の冷却体の冷
却ファンとは反対側に配置するようにしたので、発生損
失の多い第２の半導体素子群を設置した第２の冷却体で
の冷却ファンからの送風が遮られることがなく、通風抵
抗値の小さい通風路を確保することができるので、熱抵
抗値のより大きい第２の冷却体を適用することができ、
電力変換装置をさらに小型化することができるという効
果が得られる。According to the third aspect of the invention, a DC smoothing capacitor that blocks the air flow of the cooling fan is opposite to the cooling fan of the first cooling body in which the first semiconductor element group having a small loss is installed. Since it is arranged on the side, the ventilation from the cooling fan in the second cooling body in which the second semiconductor element group with a large amount of generated loss is installed is not blocked, and a ventilation path with a small ventilation resistance value is secured. Therefore, a second cooling body having a larger thermal resistance value can be applied,
The effect that the power converter can be further downsized is obtained.
【図１】本発明の第１の実施形態を示す平面図である。FIG. 1 is a plan view showing a first embodiment of the present invention.
【図２】図１の側面図である。FIG. 2 is a side view of FIG.
【図３】本発明の第２の実施形態を示す平面図である。FIG. 3 is a plan view showing a second embodiment of the present invention.
【図４】本発明を適用し得るインバータ装置の一例を示
す回路図である。FIG. 4 is a circuit diagram showing an example of an inverter device to which the present invention can be applied.
【図５】従来例を示す平面図である。FIG. 5 is a plan view showing a conventional example.
【図６】図５の側面図である。FIG. 6 is a side view of FIG.
１ 商用電源 ２ ダイオード整流器 ３ 直流平滑用コンデンサ ４ インバータ回路 ５ 負荷 ６Ａ，６Ｂ 半導体スイッチング素子 ７Ａ，７Ｂ ダイオード １１ 基板 １２Ａ 第１のヒートシンク １２Ｂ 第２のヒートシンク １３Ａ 第１の冷却ファン １３Ｂ 第２の冷却ファン 1 Commercial power supply 2 diode rectifier 3 DC smoothing capacitors 4 Inverter circuit 5 load 6A, 6B Semiconductor switching element 7A, 7B diode 11 board 12A First heat sink 12B Second heat sink 13A First cooling fan 13B Second cooling fan
Claims (3)
定周波数の電力を出力する電力変換装置において、複数
の半導体素子を用いて構成される主回路部を有し、前記
半導体素子を発生損失が少ない第１の半導体素子群と、
発生損失が多い第２の半導体素子群との少なくとも２つ
に分別し、前記第１の半導体素子群及び第２の半導体素
子群を、夫々熱抵抗値が異なる第１及び第２の冷却体に
個別に設置するようにしたことを特徴とする電力変換装
置。1. A power conversion device for converting electric power using a semiconductor element to output electric power of a predetermined frequency, comprising a main circuit section configured by using a plurality of semiconductor elements, and generating a loss in the semiconductor element. A first semiconductor element group with less
The first semiconductor element group and the second semiconductor element group are classified into at least two second semiconductor element groups having a large amount of generated loss, and the first semiconductor element group and the second semiconductor element group are respectively divided into first and second cooling bodies having different thermal resistance values. An electric power conversion device characterized by being installed individually.
却ファンを有し、当該冷却ファンの通風路が並列となる
ように配置されていることを特徴とする請求項１に記載
の電力変換装置。2. The first and second cooling bodies each have an individual cooling fan, and the ventilation passages of the cooling fan are arranged in parallel. Power converter.
定周波数の電力を出力する電力変換装置において、複数
の半導体素子及び直流平滑用コンデンサを用いて構成さ
れる主回路部を有し、前記半導体素子を発生損失が少な
い第１の半導体素子群と、発生損失が多い第２の半導体
素子群との少なくとも２つに分別し、前記第１の半導体
素子群及び第２の半導体素子群を、冷却ファンを有し且
つ熱抵抗値が異なって並列に配設された第１及び第２の
冷却体に夫々設置し、且つ前記直流平滑用コンデンサ
を、前記第１の冷却体の冷却ファンとは反対側に設置す
るようにしたことを特徴とする電力変換装置。3. A power conversion device for performing power conversion using a semiconductor element to output electric power of a predetermined frequency, comprising a main circuit section configured by using a plurality of semiconductor elements and a DC smoothing capacitor, The semiconductor elements are divided into at least two groups, a first semiconductor element group having a small generated loss and a second semiconductor element group having a large generated loss, and the first semiconductor element group and the second semiconductor element group are The cooling fan is installed in each of the first and second cooling bodies having different thermal resistance values and arranged in parallel, and the DC smoothing capacitor is different from the cooling fan of the first cooling body. An electric power conversion device characterized by being installed on the opposite side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002060977A JP2003259657A (en) | 2002-03-06 | 2002-03-06 | Power converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002060977A JP2003259657A (en) | 2002-03-06 | 2002-03-06 | Power converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003259657A true JP2003259657A (en) | 2003-09-12 |
Family
ID=28670127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002060977A Pending JP2003259657A (en) | 2002-03-06 | 2002-03-06 | Power converter |
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| Country | Link |
|---|---|
| JP (1) | JP2003259657A (en) |
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| JP2006262623A (en) * | 2005-03-17 | 2006-09-28 | Toshiba Mitsubishi-Electric Industrial System Corp | Power conversion unit and power conversion device |
| WO2008152686A1 (en) * | 2007-06-11 | 2008-12-18 | Mitsubishi Electric Corporation | Power conversion device |
| JP2009077518A (en) * | 2007-09-20 | 2009-04-09 | Yaskawa Electric Corp | Power convertor |
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| JP2012095517A (en) * | 2010-10-28 | 2012-05-17 | Samsung Electro-Mechanics Co Ltd | Heat radiation device for power conversion module |
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| JP2006262623A (en) * | 2005-03-17 | 2006-09-28 | Toshiba Mitsubishi-Electric Industrial System Corp | Power conversion unit and power conversion device |
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| JP2012095517A (en) * | 2010-10-28 | 2012-05-17 | Samsung Electro-Mechanics Co Ltd | Heat radiation device for power conversion module |
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