JP2003243374A - Substrate-treating apparatus and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus for performing resist film transformation treatment without using any chambers made of SUS steel that is subjected to electrolytic polishing, and to provide a substrate-treating apparatus and a substrate-treating method for performing resist transformation treatment and oxide film formation treatment to a substrate in the same substrate treatment chamber. <P>SOLUTION: A substrate treatment apparatus 12 for performing treatment for transforming a resist film adhering to a substrate W to the substrate W being accommodated in a chamber 18 has an outer chamber 20 for accommodating the chamber 18, and a controller 100 for controlling pressure in the chamber 18 and that in the outer chamber 20. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for performing resist film peeling processing, film formation, etc. on a substrate such as a semiconductor wafer or a CD substrate.

[0002]

2. Description of the Related Art For example, in a manufacturing process of a semiconductor device, a method of removing a resist film formed on a surface of a semiconductor wafer (hereinafter referred to as "wafer") is performed by changing the resist film to water-soluble and then removing it. A series of treatments in which the wafer is rinsed with pure water and removed from the wafer is known. A substrate processing apparatus that transforms the resist film into water-soluble by supplying ozone gas and water vapor is incorporated in the processing system for removing the resist film. Furthermore, after the resist film is solubilized, the wafer is loaded into a cleaning device provided in the processing system, and pure water is supplied to the wafer to remove the solubilized resist film from the wafer. ing.

A substrate processing apparatus for water-solubilizing a resist film oxidizes a resist film formed on the surface of a wafer by housing a wafer in a chamber, hermetically sealing the wafer, and filling ozone in the chamber with high-pressure and high-temperature ozone gas and water vapor. It is made to be water soluble. The atmosphere in the chamber and the wafer are heated by a heater installed in the chamber body. Also, during the resist film solubilization treatment, the pressure in the chamber is kept at a constant pressure higher than atmospheric pressure by adjusting the supply amount and exhaust amount of ozone gas and water vapor. Therefore, the chamber is a pressure resistant container made of SUS steel or the like.

After the resist film on the wafer surface is removed, a step of forming an oxide film for gate, for example, on the wafer surface is performed. First, in a cleaning device for cleaning a wafer with a chemical solution, impurities such as particles, metals and organic substances attached to the wafer are removed with a chemical solution. After that, an oxide film is formed on the wafer surface using oxygen gas (O ₂ ) or steam (H ₂ O) in a high pressure and high temperature state in a high pressure oxidation furnace.

[0005]

However, in the substrate processing apparatus for subjecting the resist film to water solubilization, the chamber is exposed to a corrosive atmosphere such as an ozone gas and water vapor atmosphere, so that the chamber has corrosion resistance. There is a need. On the other hand, the SUS steel used to make the chamber a pressure resistant container has weak corrosion resistance. Therefore, the chamber body may be made of SUS steel, and the inner wall surface may be electrolytically polished to make the surface of the chamber inner wall exposed to a corrosive atmosphere corrosion resistant. However, in order to improve the corrosion resistance by electropolishing the inner surface of the chamber, highly accurate electropolishing is necessary, and it is not possible to provide complete corrosion resistance. When the oxide film is formed after the resist film peeling process,
In addition to the substrate processing apparatus for water-solubilizing the resist film, a high-pressure oxidation furnace for forming an oxide film is required separately, which causes a problem that the processing system becomes large and the footprint becomes large.

[0006] Therefore, an object of the present invention is to provide a substrate processing apparatus capable of performing a resist film alteration treatment without using an electrolytically polished SUS steel chamber.
Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing resist film alteration processing and oxide film formation processing on a substrate in the same substrate processing apparatus.

[0007]

In order to solve the above problems, according to the present invention, there is provided a substrate processing apparatus for subjecting a substrate housed in a chamber to a process of modifying a resist film attached to the substrate. And a controller for controlling the pressure inside the chamber and the pressure inside the outer chamber. In this substrate processing apparatus, when the inside of the chamber is pressurized during the resist film alteration treatment, the pressure inside the chamber and the outside of the chamber can be balanced by equally pressing the inside of the outer chamber. Therefore, damage to the chamber is prevented.

The chamber is preferably made of quartz. By doing so, it is possible to realize the corrosion resistance of the chamber against the processing fluid such as the ozone gas and water vapor atmosphere used for the resist film alteration treatment, introduce the treatment fluid into the chamber, and perform the resist film alteration treatment on the wafer in the chamber. . Further, it is preferable that the outer chamber is pressure resistant. That is, it is possible to prevent the outer chamber from being damaged by the pressure difference between the inner wall and the outer wall of the outer chamber. Further, a spin chuck for rotating the substrate in the chamber may be provided. In this case, after the resist film alteration treatment, for example, pure water is supplied to the wafer while rotating the wafer, and the altered and water-soluble resist film can be washed away and removed from the wafer. Further, the wafer can be cleaned by supplying the chemical liquid while rotating the wafer.

Further, according to the present invention, the substrate is housed in a chamber, the resist film adhered to the substrate is altered, the altered resist film is removed, and the substrate is subjected to a drying treatment. A substrate processing method is provided, which comprises forming a second film and unloading the substrate from the chamber. In this substrate processing method, the wafer can be subjected to the resist film alteration treatment, the altered resist film removal treatment, the drying treatment and the second film formation treatment in the same substrate treatment apparatus. The second film in this case is, for example, an oxide film.

Further, according to the present invention, the substrate is housed in a chamber, the resist film attached to the substrate is altered, the substrate is carried out of the chamber, and the altered resist film is removed from the substrate, A substrate processing method is provided, wherein the substrate from which the altered resist film is removed is housed in the chamber, a second film is formed on the substrate, and the substrate is carried out from the chamber. In this substrate processing method, the resist film alteration process and the second film forming process can be performed on the wafer in the same substrate processing apparatus.

When removing the altered resist film,
It is preferable to supply the processing liquid to the substrate and rotate the substrate. By doing so, the processing liquid supplied to the wafer can be caused to flow to the peripheral edge of the wafer by the centrifugal force, and the processing liquid can be diffused over the entire wafer.

When the quality of the resist film is changed, it is preferable to control the pressure in the chamber and the pressure in the outer chamber accommodating the chamber to be equal to each other. Further, when forming the second film on the substrate, it is preferable to control the pressure in the chamber and the pressure in the outer chamber accommodating the chamber to be equal to each other. In this case, the pressure inside the chamber and the pressure outside the chamber can be balanced.
Therefore, damage to the chamber is prevented.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described below based on a substrate processing unit configured to perform a resist film peeling process and an oxide film forming process on a wafer as an example of a substrate. explain. FIG. 1 is a plan view of a processing system 1 incorporating a substrate processing unit 12 according to this embodiment. The processing system 1 is a wafer W
A processing unit 2 for performing a cleaning process, a resist film peeling process, and an oxide film forming process on the wafer, and a wafer W to be carried in and out of the processing unit 2.
It is comprised from the mounting part 3 which mounts.

The mounting unit 3 is provided with a mounting table 6 for mounting a container (carrier C) capable of accommodating a plurality of, for example, 25 wafers W at a predetermined interval substantially horizontally. The wafer W is loaded and unloaded through the opening in the front of the carrier C,
The opening of the carrier C is provided with a lid that can be opened and closed. Further, a shelf plate for holding the wafers W at predetermined intervals is provided on the inner wall, and 25 slots for accommodating the wafers W are formed. The wafers W are accommodated one by one in each slot with the front surface (the surface on which the semiconductor device is formed) being the upper surface (the upper surface when the wafer W is held horizontally). On the mounting table 6, the carrier C is mounted with the side surface provided with the lid facing the processing section 2 side.

At the center of the processing section 2, a wafer transfer section 10 having a wafer transfer device 8 is arranged, a substrate cleaning unit 11 is provided on the right side of the wafer transfer section 10, and a wafer cleaning unit 11 is provided on the left side of the present embodiment. The substrate processing unit 12 according to the above is installed. That is, the substrate cleaning unit 11 and the substrate processing unit 12 are arranged at positions facing each other with the wafer transfer unit 10 interposed therebetween. The wafer transfer device 8 linearly moves from a position facing the carrier C on the mounting table 6 to a position between the substrate cleaning unit 11 and the substrate processing unit 12, and is further arranged to be rotatable in a plane. It is set up.

Further, the wafer transfer device 8 is provided with a transfer arm 14 which holds the wafer W and is capable of expanding and contracting in a plane, and by advancing the transfer arm 14 into the carrier C so as to face the front surface of the carrier C. The wafer W is unloaded from C or is stored in the carrier C. Then, at the position sandwiched between the substrate cleaning unit 11 and the substrate processing unit 12, the front surface (opening) of the substrate cleaning unit 11
The transfer arm 14 is moved into the substrate cleaning unit 11 so that the wafer W is loaded into and unloaded from the substrate cleaning unit 11. Further, by rotating to the opposite side of the substrate cleaning unit 11, the front surface (opening) of the substrate processing unit 12 is opposed and the transfer arm 14 is moved to the substrate processing unit 12.
Then, the wafer W is loaded into and unloaded from the substrate processing unit 12. In this way, the wafer W is gripped by the transfer arm 14, and is transferred between the carrier C on the mounting table 6, the substrate cleaning unit 11, and the substrate processing unit 12 by the movement and rotation of the wafer transfer device 8. It

The substrate cleaning unit 11 includes a chemical solution, pure water, I
A cleaning processing liquid such as PA and a drying processing gas such as N 2 gas can be supplied to the wafer W. That is, the substrate cleaning unit 11 performs the cleaning process and the drying process on the wafer W before being loaded into the substrate processing unit 12. Further, a cleaning process for removing the water-solubilized resist film from the wafer W and a drying process after the cleaning process are performed.

The substrate processing unit 12 supplies a processing fluid such as ozone gas, water vapor and oxygen to the wafer W. That is,
The substrate processing unit 12 uses ozone gas and water vapor to perform a resist film solubilization process for changing the resist film formed on the surface of the wafer W into a water-soluble resist film. further,
The wafer W from which the resist film has been removed in the substrate cleaning unit 11 is subjected to an oxide film forming process using oxygen or water vapor.

FIG. 2 is a schematic view of the substrate processing unit 12. The substrate processing unit 12 includes a processing chamber 18 that accommodates the wafer W and performs processing therein, and an outer chamber 20 that accommodates the processing chamber 18. The processing chamber 18 is a container made of quartz and has corrosion resistance, and the outer chamber 20 is a container made of SUS steel and has a pressure resistance specification. Further, the processing chamber 18 and the outer chamber 20 are containers having a sealed structure capable of sealing the atmosphere inside thereof. In the processing chamber 18,
A support member 22 that supports the accommodated wafers W is installed. When storing the wafer W in the chamber 45,
The support members 22 are brought into contact with each other at a plurality of positions on the lower surface (back surface) of the wafer W so that both surfaces of the wafer W are supported horizontally.

An opening is formed in the processing chamber 18 for the wafer W and the transfer arm 14 to move in and out of the processing chamber 18. In the outer chamber 20, the wafer W and the transfer arm 14 are moved in and out of the outer chamber 20. The opening for is formed. The openings of the processing chamber 18 and the outer chamber 20 are the wafer W inside the processing chamber 18.
Are opened to the height supported by the support member 22, and when the wafer W is loaded into and unloaded from the processing chamber 18 by the transfer arm 14, the wafer W and the transfer arm 14 are moved horizontally to move the wafer W to the processing chamber. 18 and the outer chamber 20 through the respective openings, and the supporting member 22
The wafer W is transferred between the transfer arm 14 and the transfer arm 14 that has moved into the processing chamber 18.

The shutter 28 is a lid member 3 for opening and closing the opening of the processing chamber 18 from the outside of the processing chamber 18.
1 and a lid member 32 for opening and closing the opening of the outer chamber 20 from the outside of the outer chamber 20. Processing chamber 1
The opening 8 is formed to have a size that allows the wafer W supported by the transfer arm 14 to pass therethrough, the lid member 31 is formed to have a size capable of sealing the opening of the processing chamber 18, and the opening of the outer chamber 20 is formed to be the lid member. The lid member 32 is formed in a size that allows the passage of the outer chamber 20, and the lid member 32 is formed in a size that can close the opening of the outer chamber 20.

The shutter 28 is in a state in which the opening of the processing chamber 18 and the opening of the outer chamber 20 are closed at the same time.
By moving to the outside of the outer chamber 20, the opening of the processing chamber 18 and the opening of the outer chamber 20 can be simultaneously opened. When opening the opening of the processing chamber 18, the lid member 31 is moved from the opening of the outer chamber 20 to the outside of the outer chamber 20. At this time, the lid member 3
The lid member 32 that moves together with 1 moves to the outside of the opening of the outer chamber 20, and the opening of the outer chamber 20 opens simultaneously. When closing the opening of the processing chamber 18, the lid member 31 is moved from the opening of the outer chamber 20 to the outer chamber 20.
The processing chamber 1 by means of the lid member 31.
Close 8 openings. At this time, the lid member 32 simultaneously closes the opening of the outer chamber 20.

The processing chamber 18 is opened by the shutter 28.
The processing chamber 18 can be closed by closing the opening of the process chamber. That is, even if the pressure inside the processing chamber 18 becomes positive, the atmosphere inside the processing chamber 18 does not leak to the outside. Therefore, when the wafer W is treated with a treatment fluid such as ozone gas or water vapor in the treatment chamber 18, the outer chamber 20 can be prevented from being corroded. Further, when the opening of the outer chamber 20 is closed by the shutter 28, the outer chamber 20 can be sealed.

An infrared lamp 35 for heating as a means for heating the atmosphere in the processing chamber 18 and the wafer W is arranged outside the processing chamber 18. That is, inside the outer chamber 20, the processing chamber 18
And a plurality of infrared lamps 35 surrounding the processing chamber 18.
Is installed. Infrared rays emitted from the infrared lamp 35 outside the processing chamber 18 pass through the processing chamber 18 made of quartz and having a transparent appearance, and irradiate the atmosphere inside the processing chamber 18 and the wafer W. As a result, the atmosphere inside the processing chamber 18 and the wafer W are heated. In addition, a lamp light reflection plate (not shown) is formed on the inner wall of the outer chamber 20 to efficiently use the energy emitted from the infrared lamp 35.

The processing chamber 18 is provided with a processing chamber supply path 41 for supplying a processing fluid to the inside thereof and a processing chamber discharge path 43 for discharging the processing fluid inside the processing chamber 18. The processing chamber supply path 41 is provided so as to discharge the processing fluid onto the wafer W from above the upper surface of the wafer W supported by the support member 22. The processing chamber discharge path 43 is provided so as to discharge the processing fluid from below the lower surface of the wafer W supported by the support member 22. In the illustrated example, the discharge port of the processing chamber supply path 41 is opened to the side surface of the processing chamber 18, and the discharge port of the processing chamber discharge path 43 is opened to a position close to the side surface of the bottom surface of the processing chamber 18. . The discharge port of the processing chamber supply path 41 and the discharge port of the processing chamber discharge path 43 are open at positions facing each other with the center of the processing chamber 18 in between. That is, the processing fluid efficiently flows from the side surface of the processing chamber 18 on the processing chamber supply path 41 side to the bottom surface on the opposite side. Thereby, for example, the atmosphere in the processing chamber 18 is surely pushed out by the processing fluid,
The entire processing chamber 18 can be filled with processing fluid. Further, the discharge port of the processing chamber supply path 41 and the discharge port of the processing chamber discharge path 43 are open at positions facing each other with the wafer W supported by the support member 22 interposed therebetween. For example, the processing chamber 18 has a substantially disk-shaped wafer W.
In the case of housing, the discharge port of the processing chamber supply path 41, the center of the wafer W, and the discharge port of the processing chamber discharge path 43 are arranged so as to be aligned in a horizontal plane.
That is, when the processing fluid is flown into the processing chamber 18 for processing, the processing fluid flows along the entire wafer W.
The wafer W can be uniformly processed.

Further, a processing chamber gas discharge passage 46 for discharging gas downward into the processing chamber 18 is provided above the processing chamber 18. In the illustrated example, the processing chamber gas discharge passage 46 is opened at a position close to the side surface of the ceiling surface of the processing chamber 18. Further, the discharge port of the process chamber gas discharge path 46 and the discharge port of the process chamber discharge path 43 are open at positions facing each other with the center of the process chamber 18 in between. That is, the processing chamber gas discharge path 4 of the processing chamber 18
The gas flows efficiently from the ceiling surface on the 6 side to the bottom surface on the opposite side. As a result, the processing chamber 18
The atmosphere inside can be surely pushed out by the gas, and the entire processing chamber 18 can be filled with the gas.

The outer chamber 20 includes an outer chamber gas discharge passage 52 for discharging gas into the outer chamber 20,
An outer chamber discharge path 53 for discharging the atmosphere inside the outer chamber 20 is provided. In the illustrated example, the outer chamber gas discharge passage 52 is provided on the upper surface of the outer chamber 20, and the outer chamber discharge passage 53 is provided on the lower surface of the outer chamber 20.

The substrate processing unit 12 includes an ozone oxygen generator 60 which is a supply source of ozone gas and oxygen gas, and a steam generator 6 which generates steam to be supplied to the wafer W.
1 is provided. The ozone oxygen generator 60 and the steam generator 61 are connected to the processing chamber supply path 41 via a switching mixing valve 65.

An oxygen gas supply source (not shown) is connected to the ozone oxygen generator 60, and the ozone oxygen generator 60 is used to generate ozone gas from the oxygen gas. That is, the ozone gas generated by using the ozone oxygen generator 60 can be supplied to the wafer W, and by stopping the generation of the ozone gas, the oxygen gas supplied from the oxygen gas supply source is directly generated. The oxygen gas can be supplied to the wafer W while passing through the inside of the apparatus 60.

Ozone oxygen generator 60 and switching mixing valve 65
Are connected by an ozone gas supply passage 68, and an ozone oxygen pressure adjusting device 70 for adjusting the pressures of ozone gas and oxygen gas passing through the ozone gas supply passage 68 is provided in the ozone gas supply passage 68. The steam generator 61 and the switching mixing valve 65 are connected by a steam supply passage 73, and the steam supply passage 73 has a steam supply passage 73.
A water vapor pressure adjusting device 75 for adjusting the pressure of the water vapor passing through the inside is provided. That is, the pressure of the mixed processing fluid of oxygen gas supplied into the processing chamber 18 is adjusted by the ozone oxygen pressure adjusting device 70, and the processing chamber 1
The inside of 8 can be pressurized to a predetermined pressure. With the ozone oxygen pressure adjusting device 70 and the water vapor pressure adjusting device 75,
The pressure of the mixed processing fluid of ozone gas and water vapor supplied into the processing chamber 18 can be adjusted. Further, the pressure of the steam supplied into the processing chamber 18 is adjusted by the steam pressure adjusting device 75,
The inside can be pressurized to a predetermined pressure.

The processing chamber supply path 41 and the steam supply path 73 are enclosed in a temperature controller (not shown). The steam passing through the steam supply passage 73 is maintained at the temperature adjusted by the temperature controller. The processing fluid such as ozone gas or steam passing through the processing chamber supply path 41 and the steam supply path 73 is processed by the processing chamber supply path 41 and the steam supply path 7.
While passing through 3, the temperature is maintained at the temperature controlled by the temperature controller and is supplied to the inside of the processing chamber 18.

Further, the substrate processing unit 12 is provided with a gas supply source 80 which is a supply source of gas supplied to the inside of the processing chamber 18 and the inside of the outer chamber 20.
As the gas supplied from the gas supply source 80, for example, N
Inert gas such as 2 gas, air or the like is used. Between the gas supply source 80 and the processing chamber gas discharge passage 46,
A processing chamber gas pressure adjusting device 82 for adjusting the pressure of the gas passing through the processing chamber gas discharge passage 46 and an opening / closing valve 83 are interposed. That is, the pressure of the gas supplied into the processing chamber 18 can be adjusted by the processing chamber gas pressure adjusting device 82 to pressurize the inside of the processing chamber 18 to a predetermined pressure. Also, the gas supply source 8
0 and the outer chamber gas discharge passage 52 are provided with an outer chamber gas pressure adjusting device 85 for adjusting the pressure of the gas passing through the outer chamber gas discharge passage 52 and an opening / closing valve 86. That is, the outer chamber gas pressure adjusting device 8
5, the pressure of the gas supplied into the outer chamber 20 can be adjusted and the inside of the outer chamber 20 can be pressurized to a predetermined pressure.

Further, an opening / closing valve 89 and a processing chamber discharge pressure adjusting device 90 for adjusting the pressure of the processing fluid passing through the inside of the processing chamber discharge path 43 are provided in the processing chamber discharge path 43. That is, the pressure of the gas discharged from the inside of the processing chamber 18 can be adjusted by the processing chamber discharge pressure adjusting device 90 to maintain the processing chamber 18 at a predetermined pressure. Outer chamber discharge path 5
3, an opening / closing valve 94 and an outer chamber discharge pressure adjusting device 95 for adjusting the pressure of the fluid passing through the inside of the outer chamber discharge passage 53 are provided. That is, the pressure of the gas discharged from the inside of the outer chamber 20 can be adjusted by the outside chamber discharge pressure adjusting device 95 to maintain the inside of the outer chamber 20 at a predetermined pressure.

Ozone oxygen pressure adjusting device 70, water vapor pressure adjusting device 75, processing chamber gas pressure adjusting device 82,
The outer chamber gas pressure adjusting device 85, the processing chamber discharge pressure adjusting device 90, and the outer chamber discharge pressure adjusting device 95 are controlled by the controller 100. The controller 100 sends a control signal to any one of the ozone oxygen pressure adjusting device 70, the water vapor pressure adjusting device 75, the processing chamber gas pressure adjusting device 82, or the processing chamber discharge pressure adjusting device 90 so that the inside of the processing chamber 18 can be controlled. Control the pressure. The controller 100 also sends a control signal to the outer chamber gas pressure adjusting device 85 or the outer chamber discharge pressure adjusting device 95 to control the pressure in the outer chamber 20.

When the pressure in the processing chamber 18 is increased, the controller 100 simultaneously pressurizes the pressure of the gas atmosphere in the outer chamber 20 so that the pressure in the outer chamber 20 follows the pressure in the processing chamber 18. Also, when the pressure in the pressurized processing chamber 18 is reduced, the pressure of the gas atmosphere in the pressurized outer chamber 20 is also reduced at the same time so that the pressure in the outer chamber 20 is reduced. Follow the pressure of. That is, the processing chamber 18 is controlled by the controller 100.
The pressures inside and outside the chamber 20 are controlled to be equal. In this way, since the balance between the pressure inside the processing chamber 18 and the pressure outside the processing chamber 18 is maintained, damage to the processing chamber 18 can be prevented.

Next, the processing steps of the wafer W in the processing system 1 according to this embodiment configured as described above will be described. First, a carrier C containing, for example, 25 wafers each of which has not been processed yet is placed on the placing table 6 by a transfer robot (not shown). Further, the wafer transfer device 8 moves to a position facing the carrier C. Then, the wafer W is taken out one by one by the transfer arm 14 of the wafer transfer device 8. The wafer transfer device 8 holding the unprocessed wafer W taken out moves between the substrate cleaning unit 11 and the substrate processing unit 12, rotates toward the substrate cleaning unit 11 side, and opposes the substrate cleaning unit 11. The wafer W is stored in the substrate cleaning unit 11 by the transfer arm 14. In the substrate cleaning unit 11, a chemical solution is used to remove contaminants such as particles adhering to the wafer W by using a chemical solution, followed by rinsing and drying. The wafer W, which has been subjected to a series of cleaning processes including a chemical solution process, a rinse process, and a drying process, is unloaded from the substrate cleaning unit 11 by the transfer arm 14.

The wafer transfer device 8 holding the cleaned wafer W rotates between the substrate cleaning unit 11 and the substrate processing unit 12 toward the substrate processing unit 12 side so as to face the substrate processing unit 12 and transfer arm. The wafer W is stored in the substrate processing unit 12 by 14. In the substrate processing unit 12, the resist film formed on the surface of the wafer W is oxidized by using a mixed processing fluid of ozone gas and water vapor. As a result, the resist film becomes water-soluble. Wafer W that has undergone the prescribed water solubilization treatment
Is again transferred by the transfer arm 14 to the substrate processing unit 12
Be shipped from.

Next, the wafer transfer device 8 holding the wafer W subjected to the water-solubilization treatment of the resist film faces the substrate cleaning unit 11 and stores the wafer W in the substrate cleaning unit 11 by the transfer arm 14. Substrate cleaning unit 11
In step 1, the denatured resist film attached to the surface of the wafer W is removed using pure water. As a result, the resist film is peeled off from the surface of the wafer W. After the predetermined alteration resist film removal process with pure water is completed, a series of cleaning processes, that is, a chemical solution process, a rinse process, and a drying process are sequentially performed if necessary. The wafer W that has been subjected to the predetermined altered resist film removal process and the series of cleaning processes is unloaded from the substrate cleaning unit 11 by the transfer arm 14 again.

The wafer transfer device 8 holding the wafer W from which the resist film has been peeled off and cleaned is the substrate processing unit 1
2, the wafer W is housed in the substrate processing unit 12 by the transfer arm 14. In the substrate processing unit 12, a processing fluid such as oxygen gas or water vapor is used,
An oxide film is formed on the surface of the wafer W. The wafer W that has been subjected to the predetermined oxide film forming process is unloaded from the substrate processing unit 12 by the transfer arm 14 again.

Then, the wafer transfer device 8 holding the wafer W which has been subjected to the oxide film forming process moves to the front of the carrier C and rotates to face the carrier C. Then, the wafer W is stored in the carrier C by the transfer arm 14. As described above, in the processing system 1,
A series of processes are performed on the loaded wafer W in the order of cleaning process, resist film water-solubilizing process, altered resist film removing process, cleaning process, and oxide film forming process. That is, the cleaning process before the resist film solubilization process and the oxide film formation process and the modified resist film removal process are performed by the substrate cleaning unit 11, and the resist film solubilization process and the oxide film formation process are performed by the substrate processing unit 12. .

Here, the resist film solubilization process in the substrate processing unit 12 will be described. First, shutter 2
8 is moved to the outside of the outer chamber 20, and each opening of the processing chamber 18 and the outer chamber 20 is opened. Then, the transfer arm 14 holding the wafer W is advanced into the chamber 45, and the wafer W is placed on the support member 22. After that, the transfer arm 14 exits from the inside of the processing chamber 18 and the outer chamber 20. After the transfer arm 14 retreats, the shutter 28 is moved into the outer chamber 20, the lid member 31 is brought into contact with the opening of the processing chamber 18, and the lid member 32 is brought into contact with the opening of the outer chamber 20, thereby making the treatment chamber 18 and the respective openings of the outer chamber 20 are closed. Thus, the processing chamber 18 accommodating the wafer W is hermetically sealed, and the outer chamber 20 accommodating the processing chamber 18 is hermetically sealed.

First, the infrared lamp 35 is operated to raise the temperature of the atmosphere in the processing chamber 18 and the wafer W.
As a result, the water solubilization process of the resist film on the wafer W is uniformly performed. Subsequently, ozone gas having a predetermined concentration is supplied into the processing chamber 18. The switching mixing valve 65 is switched to connect the ozone oxygen generator 60 and the processing chamber supply path 41, and the opening / closing valve 8 of the processing chamber discharge path 43 is connected.
With 9 open, ozone gas is supplied while exhausting the inside of the processing chamber 18. Further, the opening / closing valve 83 of the outer chamber gas discharge passage 52 and the opening / closing valve 94 of the outer chamber discharge passage 53 are opened, so that gas is introduced into the outer chamber 20.

While the processing chamber 18 is kept in an ozone gas atmosphere, the pressure inside the processing chamber 18 is kept higher than atmospheric pressure, for example, a positive pressure of about 0.2 MPa as a gauge pressure, under the control of the controller 100. That is,
The controller 100 sends a control signal to the ozone oxygen pressure adjusting device 70 and the processing chamber discharge pressure adjusting device 90 to control the ozone gas supply amount from the processing chamber supply passage 41 and the atmosphere discharge amount from the processing chamber discharge passage 43. , The pressure in the processing chamber 18 is controlled. In addition, the controller 100 includes the processing chamber 18
The control is performed so that the pressure inside the outer chamber 20 always follows the pressure inside. That is, the controller 100
Sends a control signal to the outer chamber gas pressure adjusting device 85 and the outer chamber discharge pressure adjusting device 95 to control the gas supply amount from the outer chamber gas discharge passage 52 and the gas exhaust amount from the outer chamber discharge passage 53. Thus, the pressure inside the outer chamber 20 is controlled to be equal to the pressure inside the processing chamber 18.

In this way, the pressure inside the processing chamber 18 is kept constant, and the inside of the processing chamber 18 is brought into an ozone gas atmosphere. At this time, the controller 100
The pressure in the processing chamber 18 and the pressure in the outer chamber 20 are controlled to be equal and high. Further, by heating the infrared lamp 35, the temperature of the ozone gas atmosphere in the processing chamber 18 and the temperature of the wafer W are maintained at a predetermined high temperature.

After that, ozone gas and water vapor are simultaneously supplied into the processing chamber 18, and the resist film of the wafer W is solubilized. While switching the switching mixing valve 65, the ozone oxygen generator 60 and the steam generator 61 are connected to the processing chamber supply path 41, the open / close valve 89 of the processing chamber discharge path 43 is opened, and the inside of the processing chamber 18 is exhausted. Ozone gas and water vapor are supplied at the same time. The steam supplied from the steam generator 61 passes through the steam supply passage 73 while being adjusted to a predetermined temperature, for example, about 115 ° C. by a temperature controller (not shown), and is mixed with ozone gas in the switching mixing valve 65 to be mixed with the processing chamber. It passes through the supply path 41. Then, while keeping the pressure in the processing chamber 18 constant, the ozone gas in the processing chamber 18 is replaced with a mixed processing fluid of ozone gas and water vapor.

Also in this case, the pressure in the processing chamber 18 is maintained under atmospheric pressure, for example, a positive pressure of about 0.2 MPa in gauge pressure, under the control of the controller 100. That is, the controller 100 sends a control signal to the ozone oxygen pressure adjusting device 70, the water vapor pressure adjusting device 75, and the processing chamber discharge pressure adjusting device 90, and supplies the mixed processing fluid supply amount and processing of ozone gas and water vapor from the processing chamber supply path 41. By controlling the discharge amount from the chamber discharge passage 43, the pressure in the processing chamber 18 is controlled. Further, the controller 100 always causes the pressure in the outer chamber 20 to follow the pressure in the processing chamber 18, and controls the pressure in the processing chamber 18 and the pressure in the outer chamber 20 to be equal to each other.
Then, by heating the infrared lamp 35, the temperature of the ozone gas atmosphere in the processing chamber 18 and the temperature of the wafer W are maintained at a predetermined high temperature.

The resist film formed on the surface of the wafer W is oxidized by the mixed processing fluid of ozone gas and water vapor thus filled in the processing chamber 18. During the resist film solubilization treatment, the mixed treatment fluid is continuously supplied from the treatment chamber supply passage 41, and the mixed treatment fluid is continuously discharged from the treatment chamber discharge passage 43. In this case as well, the controller 100 controls the pressure in the processing chamber 18 to be maintained at a predetermined high pressure, and also controls the outer chamber 20.
The pressure inside the processing chamber 18 is always made to follow the pressure inside the processing chamber 18, and the pressure inside the processing chamber 18 and the outside chamber 2
It is controlled so that the pressure of 0 and the pressure of 0 are equally high.
Then, by heating the infrared lamp 35, the temperature of the ozone gas atmosphere in the processing chamber 18 and the temperature of the wafer W are maintained at a predetermined high temperature. The processing chamber supply path 41
Stop supplying the mixed processing fluid from the processing chamber 18
The resist film may be water-solubilized on the wafer W with a mixed processing fluid that fills the processing chamber 18 while keeping the internal pressure constant.

After the water-solubilization of the resist film is completed, the mixed processing fluid of ozone gas and water vapor is discharged from the processing chamber 18. Open / close valve 83 for processing chamber gas discharge passage 46
The opening / closing valve 89 of the processing chamber discharge path 43 is opened, and gas is supplied from the gas supply source 80 into the processing chamber 18. That is, by supplying gas while exhausting the inside of the processing chamber 18, the mixed processing fluid is pushed out to the processing chamber discharge path 43 by the gas and the processing chamber 18 is discharged.
The mixed processing fluid atmosphere in the processing chamber 18 is purged with a gas atmosphere.

Then, the wafer W is unloaded from the substrate processing unit 12. The shutter 28 is moved to the outside of the outer chamber 20, and the processing chamber 18 and the outer chamber 20 are moved.
Open each opening. Then, the wafer transfer device 8 moves the transfer arm 14 into the processing chamber 18, and the supporting member 2
Wafer W is received away from above, and processing chamber 1 is received.
8 and the inside of the outer chamber 20.

Next, the oxide film forming process in the substrate processing unit 12 will be described. First, the processing chamber 18 containing the wafer W is hermetically sealed, the outer chamber 20 housing the processing chamber 18 is hermetically sealed, the infrared lamp 35 is operated, and the oxygen gas and the wafer W in the processing chamber 18 are heated. Then, the switching mixing valve 65 is switched to connect the ozone oxygen generator 60 to the processing chamber supply path 41, and the open / close valve 8 of the processing chamber discharge path 43 is connected.
9 is opened, and oxygen gas is supplied while exhausting the inside of the processing chamber 18. Further, gas is introduced into the outer chamber 20 from the outer chamber gas discharge passage 52. Then, the processing chamber 18 is filled with oxygen gas to bring the oxygen gas in the processing chamber 18 to a predetermined high pressure state.
Also in this case, the controller 100 is the processing chamber 1
The pressure in the outer chamber 20 is controlled so that the pressure in the outer chamber 20 becomes a predetermined high pressure, and the pressure in the outer chamber 20 is always made to follow the pressure in the treatment chamber 18. ， It is controlled to be equal.

An oxide film is formed on the wafer W by the high pressure and high temperature oxygen gas in the processing chamber 18. Even during the formation of the oxide film, the controller 100 keeps the processing chamber 1
The pressure in the outer chamber 20 is controlled so that the pressure in the outer chamber 20 becomes a predetermined high pressure, and the pressure in the outer chamber 20 is always made to follow the pressure in the treatment chamber 18. ， It is controlled to be equal. During the formation of the oxide film, the oxygen gas may be continuously supplied from the processing chamber supply passage 41 and the atmosphere may be continuously discharged from the processing chamber discharge passage 43. Also in this case, the pressure inside the processing chamber 18 and the inside of the outer chamber 20 can be always maintained at the same pressure under the control of the controller 100.

After the oxide film is formed, the on-off valve 89 and the on-off valve 9
4 open, processing chamber 18 inside and outside chamber 20
Exhaust the atmosphere inside. Also in this case, the controller 10
With the control of 0, the pressure in the processing chamber 18 is reduced and the pressure in the outer chamber 20 is made to always follow the pressure in the processing chamber 18, so that the pressure in the processing chamber 18 and the pressure in the outer chamber 20 are , It is possible to reduce the pressure while controlling the pressure to be equal. afterwards,
The shutter 28 is moved to the outside of the outer chamber 20, and the openings of the processing chamber 18 and the outer chamber 20 are opened.
The wafer W is unloaded.

According to the substrate processing unit 12, the wafer W is processed in the corrosion-resistant processing chamber 18,
The processing chamber 18 is sealed to prevent the processing fluid atmosphere from leaking into the outer chamber 20. Further, by maintaining the balance of the pressures in the processing chamber 18 and the outer chamber 20, it is possible to prevent the processing chamber 18 made of quartz from being damaged. That is, conventional electropolished SUS
It is possible to perform resist film alteration treatment that pressurizes the treatment fluid without using a steel chamber. Further, since the inside of the processing chamber 18 can be in a high pressure state, an oxide film forming process using a processing fluid in a high pressure state can be performed in addition to the resist film alteration process. That is, the resist film alteration treatment and the oxide film formation treatment can be performed in the same apparatus, and there is no need to separately install a high-pressure oxidation furnace for forming the oxide film. Can be made smaller.

Although an example of the preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described here. For example, the substrate is not limited to a semiconductor wafer, but other C
It may be a D substrate or the like.

In the substrate processing unit 12 shown in FIG. 2, a pure water supply path for supplying pure water may be installed to supply pure water to the upper surface of the wafer W. In this case, the modified resist film removing process can be performed in the substrate processing unit 12. Further, a chemical liquid supply path for supplying the chemical liquid may be installed to supply the cleaning chemical liquid to the upper surface of the wafer W. In this case, the cleaning process of the wafer W can be performed in the substrate processing unit 12.

As shown in FIG. 3, the spin chuck 110 may be installed inside the processing chamber 18 and the wafer W may be rotated. In this case, the processing liquid is applied to the wafer W
And can be easily diffused over the entire wafer W.

In the substrate processing unit 12 shown in FIG. 3, the spin chuck 110 can hold the wafer W at the peripheral edge thereof, and the shaft 112 is connected to the lower portion of the spin chuck 110, and the shaft 112 serves as the processing chamber 18. Of the outer chamber 20 and the floor of the outer chamber 20. A motor 115 is provided below the shaft 112 protruding outside the outer chamber 20.
The motor 115 can integrally rotate the wafer W held by the spin chuck 110, the spin chuck 110, and the shaft 112.

The shaft 112 is arranged in a hole 116 provided in the floor of the processing chamber 18, and is also arranged in a hole 117 provided in the lower surface of the outer chamber 20. The shaft 112 is rotatable in the holes 116 and 117.

As shown in FIG. 4, the lower surface of the floor of the processing chamber 18 is provided with an air grip seal 120 for sealing the gap between the hole 116 and the shaft 112 from the lower surface. The air grip seal 120 has a donut shape along the gap between the hole 116 and the shaft 112. Further, the outer surface of the air grip seal 120 is fixed, and when it is expanded, the inner surface moves inward.
Therefore, when the air grip seal 120 expands, the inner surface closely adheres to the peripheral surface of the shaft 112, and the upper surface closely adheres to the lower surface of the processing chamber 18, so that the hole 116
And the gap between the shaft 112 and the shaft 112 is closed. Further, when the air grip seal 120 contracts, the inner annular surface separates from the peripheral surface of the shaft 112, so that the shaft 112 becomes rotatable.

Further, an air grip seal 122 and an air grip seal 124 are provided on the upper and lower surfaces of the floor of the outer chamber 20, respectively. The air grip seals 122 and 124 have the same structure as the air grip seal 120, and close the gap between the hole 117 and the shaft 112 by expansion and separate from the peripheral surface of the shaft 112 by contraction. The air grip seal 122 and the air grip seal 124 close the gap from the upper surface and the lower surface of the outer chamber 20, respectively.

Air grip seals 120, 122, 12
When the shaft 4 contracts, the shaft 112 can rotate in the holes 116 and 117. As a result, the wafer W can be rotated in the processing chamber 18. Further, when the opening of the processing chamber 18 is closed by the shutter 28 and the air grip seal 120 is expanded to close the gap between the hole 116 and the shaft 112, the processing chamber 18 can be sealed. Therefore, even if the processing chamber 18 has a positive pressure, the processing chamber 1
The atmosphere inside 8 does not leak to the outside, and the corrosion of the outer chamber 20 can be prevented. Further, the outer chamber 20 can be sealed by closing the opening of the outer chamber 20 with the shutter 28 and expanding the air grip seals 122 and 124 to close the gap between the hole 116 and the shaft 112.

In the substrate processing unit 12 shown in FIG. 3, the pure water supply path 1 is provided above the processing chamber 18.
30 are provided. The pure water supply path 130 is the pure water supply source 1
Pure water supplied from 32 can be discharged to the central portion of the upper surface of the wafer W held by the spin chuck 110.

Next, a process using the substrate processing unit 12 having the spin chuck 110 and the pure water supply passage 130 shown in FIG. 3 will be described. First, in the processing system 1 shown in FIG. 1, the wafer W is taken out from the carrier C by the wafer transfer device 8 and the wafer W is cleaned in the substrate cleaning unit 11. Next, the wafer W is loaded into the substrate processing unit 12.

First, the wafer W is loaded into the processing chamber 18 and held by the spin chuck 110.
The spin chuck 110 and the shaft 112 are kept stationary. Then, the shutter 28 is closed, the air grip seal 120 is expanded, and the hole 116 is closed. As a result, the processing chamber 18 is closed. In addition, the air grip seals 122 and 124 are expanded so that the holes 11
The outer chamber 20 is closed by closing 7. Then, with the wafer W and the spin chuck 110 kept stationary, the resist film solubilization process is performed.

When the water-solubilization of the resist film is completed, the mixed processing fluid of ozone gas and water vapor is discharged from the processing chamber 18, and then the air grip seals 120, 122,
124 is contracted to open the holes 116 and 117, and the shaft 112 is made rotatable. Next, the motor 1
The shaft 112 and the spin chuck 11 are driven by 15
0, the wafer W is rotated. Pure water is supplied from the pure water supply path 130 to the central portion of the upper surface of the rotating wafer W.
Since the pure water supplied to the upper surface of the wafer W flows to the peripheral edge of the wafer W by the centrifugal force, the pure water can be easily diffused over the entire upper surface of the wafer W. Since the altered resist film attached to the upper surface of the wafer W is water-soluble, it is washed away with pure water, discharged together with the pure water to the periphery of the wafer W, and removed from the wafer W. Pure water is discharged from the inside of the processing chamber 18 by the processing chamber discharge passage 43, and is flown to a drain line (not shown) branched from the processing chamber discharge passage 43. In this way, the resist film is peeled off from the surface of the wafer W. After the supply of pure water is stopped, the wafer W is rotated and the pure water attached to the wafer W is shaken off by the centrifugal force. As a result, the wafer W can be dried.

After the alteration resist film removing process is completed, an oxide film forming process is subsequently performed. First, the air grip seals 120, 122, and 124 are expanded to close the holes 116 and 117 and close the processing chamber 18.
Then, the oxide film forming process is performed with the wafer W and the spin chuck 110 kept stationary. After that, the wafer W is unloaded from the substrate processing unit 12 by the wafer transfer device 8 and stored in the carrier C.

As described above, the spin chuck 1 shown in FIG.
Substrate processing unit 12 including 10 and pure water supply path 130
According to the method, it is possible to preferably execute a series of processes in which the resist film water-solubilizing process, the altered resist film removing process, the drying process, and the oxide film forming process are performed in this order.

It is also possible to supply an appropriate chemical liquid other than pure water to the surface of the wafer W and perform a cleaning process with the chemical liquid. In this case, it is possible to perform the cleaning process, the resist film water-solubilizing process, the altered resist film removing process, the drying process, and the oxide film forming process in the same apparatus. That is, since it is not necessary to separately install the substrate cleaning unit 11 in addition to the high-pressure oxidation furnace for forming an oxide film, the processing system 1 can be further downsized and the footprint can be reduced.

As shown in FIG. 5, the shaft 112 equipped with the motor 115 can be removed from the lower portion of the spin chuck 110 and moved to the outside of the outer chamber 20 through the holes 116 and 117.
A movable closing member 140 for sealing 117 may be provided.
Also in this case, it is possible to preferably execute a series of processes in which the resist film water-solubilizing process, the altered resist film removing process, the drying process, and the oxide film forming process are performed in this order.

In the substrate processing unit 12 shown in FIGS. 5 and 6, the upper end of the shaft 112 is the spin chuck 110.
Is a connection portion 143 for connecting to the lower part of the. As shown in FIG. 6, the connecting portion 143 and the shaft 112 can be inserted into the hole 117, and the connecting portion 143 can be inserted into the hole 1
It can be inserted into 16 and raised to a position in the processing chamber 18 where it is connected to the lower part of the spin chuck 110. Further, the lower portion of the spin chuck 110 is a connected portion 145 to which the connecting portion 143 is attached. When the connecting portion 143 is attached to the connected portion 145 and the motor 115 is driven, it is held by the spin chuck 110. The wafer W, the spin chuck 110, and the shaft 112 can be integrally rotated.

The movable closing member 140 is the processing chamber 1
8 has a lid member 151 for opening and closing the hole 116 from the outside of the processing chamber 18, and a lid member 152 for opening and closing the hole 117 of the outer chamber 20 from the outside of the outer chamber 20.
As shown in FIG. 5, the hole 116 of the processing chamber 18 is sized to allow the connection part 143 to be inserted and rotated, and the lid member 151 is sized to seal the hole 116. The hole 117 of the chamber 20 is the lid member 15
1 is formed in a size that allows passage, and the lid member 152 is formed in a size that can seal the hole 117 of the outer chamber 20.

The movable closing member 140 has holes 116 and 117.
Can be closed at the same time and can be moved to the outside of the outer chamber 20 to open the holes 116 and 117 at the same time. When opening the hole 116 of the processing chamber 18, the lid member 151 is moved from the hole 117 to the outside of the outer chamber 20. At this time, the lid member 152 that moves integrally with the lid member 151 moves to the outside of the hole 117 of the outer chamber 20 and opens the hole 117 at the same time. When closing the hole 116, the lid member 151 is inserted through the hole 117 into the outer chamber 20.
Then, the cover member 151 closes the hole 116. At this time, the lid member 152 simultaneously closes the hole 117.

The processing chamber 18 is opened by the shutter 28.
Of the hole 11 is closed by the lid member 151.
By closing 6 the processing chamber 18 can be sealed. Therefore, even if the processing chamber 18 has a positive pressure,
The atmosphere inside the processing chamber 18 does not leak outside, and the corrosion of the outer chamber 20 can be prevented. Further, the shutter 28 closes the opening of the outer chamber 20, and the lid member 152 closes the hole 117.
The outer chamber 20 can be hermetically closed by closing.

In the substrate processing unit 12 shown in FIGS. 5 and 6, when performing the resist film solubilization process, as shown in FIG. 5, the lid member 151 of the movable closing member 140 is provided with the hole 117.
From the upper chamber 20 into the outer chamber 20 to move the lid member 15
1, 152 seal the holes 116, 117 respectively. As a result, the processing chamber 18 and the outer chamber 20 are closed. The shaft 112 stands by outside the outer chamber 20.

Next, when performing the modified resist film removing process, as shown in FIG. 6, the movable closing member 140 is moved to the outside of the outer chamber 20 to be in a standby state, and the shaft 1
12 is moved up into the outer chamber 20, and the connecting portion 1
43 is attached to the connected portion 145. And the motor 11
5 is driven to rotate the wafer W held by the spin chuck 110. Pure water is supplied from the pure water supply passage 130 provided above the processing chamber 18 to the upper surface of the rotating wafer W to wash away the altered resist film and remove it from the wafer. After that, the wafer W is rotated, the attached pure water is shaken off by the centrifugal force, and the wafer W is dried.

Next, when performing the oxide film forming process, as shown in FIG.
, The shaft 112 is moved to the outside of the outer chamber 20 to be in a standby state, and the moving closing member 14
The lid member 151 of No. 0 is moved up into the outer chamber 20 from the hole 117, the holes 116 and 117 are sealed by the lid members 151 and 152, respectively, and the processing chamber 18 and the outer chamber 20 are sealed.

That is, the substrate processing unit 1 shown in FIGS.
2, the substrate processing unit 12 including the spin chuck 110 and the pure water supply path 130 shown in FIG.
It is possible to suitably execute a series of processes of the resist film solubilization process, the altered resist film removal process, the drying process, and the oxide film forming process. Further, it is also possible to supply an appropriate chemical liquid other than pure water to the surface of the wafer W and perform a cleaning process with the chemical liquid.

The present invention is not limited to the substrate processing apparatus and substrate processing method for forming an oxide film on a substrate by oxygen gas. In addition, the present invention can be implemented in various substrate processing apparatuses and substrate processing methods in which an oxide film or a nitride film is formed on a substrate by performing thermal oxidation or thermal nitridation in a gas containing oxygen element, nitrogen element, hydrogen element, etc. is there.

[0079]

According to the substrate processing apparatus and the substrate processing method of the present invention, the inside of the chamber is hermetically closed to prevent the processing fluid atmosphere from leaking into the outer chamber. By balancing the pressure inside and outside the chamber,
Prevent damage to the chamber. Therefore, the resist film alteration treatment can be performed without using the electrolytically polished SUS steel chamber. Moreover, in the same substrate processing apparatus,
The substrate can be subjected to resist film alteration treatment and film formation treatment. Further, the processing liquid can be supplied while rotating the substrate. The processing system can be downsized and the footprint can be reduced.

[Brief description of drawings]

FIG. 1 is a plan view of a processing system.

FIG. 2 is an explanatory diagram illustrating a substrate processing apparatus according to the present embodiment.

FIG. 3 is an explanatory diagram illustrating a substrate processing apparatus configured to rotate a wafer.

FIG. 4 is an explanatory diagram illustrating an air grip seal.

FIG. 5 is an explanatory diagram illustrating a state in which the processing chamber is sealed by the movable closing member in the substrate processing apparatus configured to include the shaft for rotating the wafer and the movable closing member.

FIG. 6 is an explanatory diagram for explaining a state in which the wafer can be rotated by the shaft in the substrate processing apparatus configured to include the shaft for rotating the wafer and the movable closing member.

[Explanation of symbols]

C carrier W wafer 1 processing system 11 Substrate cleaning unit 12 Substrate processing unit 18 Processing chamber 20 Outer chamber 22 Support member 28 shutters 35 infrared lamp 41 Processing chamber supply path 43 Processing chamber discharge path 46 Processing chamber gas discharge path 52 Outer chamber gas discharge path 53 Outer chamber discharge path 60 ozone oxygen generator 61 Steam generator 70 Ozone oxygen pressure adjustment device 75 Water vapor pressure regulator 82 Processing chamber gas pressure adjusting device 85 Outer chamber gas pressure regulator 90 Processing chamber discharge pressure adjusting device 95 Outer chamber exhaust pressure adjusting device 100 controller 110 spin chuck 112 shaft 115 motor 120, 122, 124 Air grip seal 140 Moving closing member

Claims (9)

[Claims] 1. A substrate processing apparatus for performing a process of modifying a resist film attached to a substrate on a substrate housed in the chamber, comprising: an outer chamber for housing the chamber; A substrate processing apparatus having a controller for controlling the pressure in the outer chamber. 2. The substrate processing apparatus according to claim 1, wherein the chamber is made of quartz. 3. The substrate processing apparatus according to claim 1, wherein the outer chamber has a pressure resistance specification. 4. A spin chuck for rotating a substrate in the chamber is provided.
Or the substrate processing apparatus according to 3. 5. The substrate is housed in a chamber, the resist film attached to the substrate is altered, the altered resist film is removed, and the substrate is dried to form a second substrate.
Forming a film and carrying out the substrate from the chamber. 6. The substrate is housed in a chamber, the resist film attached to the substrate is altered, the substrate is carried out of the chamber, the altered resist film is removed from the substrate, and the altered resist film is removed. The substrate processing method, wherein the substrate from which the substrate has been removed is stored again in the chamber, a second film is formed on the substrate, and the substrate is unloaded from the chamber. 7. The substrate processing method according to claim 5, wherein a treatment liquid is supplied to the substrate and the substrate is rotated when the altered resist film is removed. 8. When the quality of the resist film is changed, the pressure in the chamber and the pressure in the outer chamber accommodating the chamber are controlled so as to be equally high. The substrate processing method according to claim 6, 6 or 7. 9. When the second film is formed on the substrate, the pressure in the chamber and the pressure in the outer chamber accommodating the chamber are controlled to be equal to each other. The substrate processing method according to claim 5, 6, 7, or 8.