JP2003218397A - Semiconductor light emission device and light emission device for lighting using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emission device which has a good heat radiation characteristic and can prevent noise and a light emission device for lighting which uses it. <P>SOLUTION: The device has a single-body light emitting element 2 which has a couple of electrodes formed on one surface of a semiconductor thin-film layer stacked on a transparent substrate, an Si submount element 3 which has two electrodes 7 and 8 on its top surface so that the single-body light emitting element 2 is so connected as to electrically connect the couple of electrodes to the two electrodes 7 and 8 and also has an insulating film 9 on its reverse surface, a heat radiation block 4 provided below the Si submount element 3, and pair of electrode blocks 5 and 6 which are provided adjacently to the heat radiation block 4 and connected to the two electrodes 7 and 8 of the Si submount element 3 through bonding wires 10 and 11. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having excellent heat dissipation characteristics and a lighting light emitting device using the same.

[0002]

2. Description of the Related Art GaN, GaAlN, InGaN and I
A blue light emitting diode (hereinafter, referred to as “LED”) using a GaN compound semiconductor such as nAlGaN is
Generally, it is used as a so-called flip-chip type light emitting device in which an insulating sapphire is used as a substrate, p-side and n-side electrodes are formed on the surface side of a compound semiconductor laminated on this substrate, and these electrodes are surface-mounted. In such a flip-chip type light emitting device, since the sapphire of the substrate is light-transmissive, the substrate is mounted on the conductive substrate in a posture in which the substrate faces the light emitting direction side, and the surface of the substrate (the side opposite to the electrode formation surface) Can be used as the main light extraction surface. Recently, instead of mounting the chip of the light emitting element on the conductive substrate of the device, for example, a semiconductor light emitting element mounted on a Si submount element for the purpose of electrostatic protection by a Zener diode is used as an effective light source. Has been done.

As shown in FIGS. 12A and 12B, a conventional composite light emitting device 70 is one in which a single light emitting device 72 is mounted on a Si submount device 71 and is molded with a phosphor 76. .

The Si submount element 71 is made of an n-type silicon substrate, and p-type impurity ions are partially injected and diffused to form a p-type semiconductor region partially to form a zener diode. It is a thing. An n-side electrode is formed in a portion corresponding to the n-type semiconductor region, and a p-side electrode is formed in a portion corresponding to the p-type semiconductor region. That is, the electrode 73 spreads over the element mounting surface of the Si submount element 71 to form a wire bonding region, and the electrode 74
Is connected to the Au electrode 75 on the side opposite to the element mounting surface of the Si sub-mount element 71 via an n-type semiconductor region.

The single light emitting element 72 is made of GaN as in the conventional example.
It is a blue light emitting flip-chip type using a compound semiconductor, and a p-type layer and an n-type layer are laminated on a sapphire substrate, and a p-side electrode and an n-side electrode are vapor-deposited on the surface of these layers. It was formed by. Then, the single light emitting element 72 is mounted and bonded on the Si submount element via the micro bumps 77 and 78. The Si sub-mount element 71 (zener diode) can be added with the function of electrostatic protection by connecting to the single light emitting element 72 in the opposite polarity.

That is, when a high-voltage overcurrent is applied to the electrodes 73 and 74 by such a reverse polarity connection, the reverse voltage applied to the single light emitting element 72 is the forward direction of the Si submount element 71. The bypass opens near the voltage, that is, 0.9V. In addition, by setting the Zener voltage Vz of the Si submount element 71 to about 10 V, the forward voltage applied to the single light emitting element 72 opens the bypass at that voltage, and the overcurrent is released. Therefore, it is possible to reliably prevent the single light emitting element 72 from being damaged by static electricity.

The Si submount element 71 has an n on the bottom surface.
The side electrode 75 is conductively mounted on the wiring pattern of the mounting substrate 79, and the p-side electrode 73 on the upper surface thereof is wire-bonded (not shown) to the wiring pattern of the mounting substrate.

The p-side electrode of the single light emitting element 72 is electrically connected to the wiring pattern of the mounting substrate 79 via the micro bump 78, the n-type semiconductor region of the Si submount element 71, and the electrode 75 on the back side. Side electrodes are micro bumps 7
7, the p-side electrode 73 of the Si submount element 71, and a wire to electrically connect to the wiring pattern. With such a conductive structure, the power source side and the composite light emitting element 70 are electrically connected, and light is emitted from the active layer by energization.

The heat generated from the active layer of the single light emitting element 72 moves to the Si submount element 71 via the micro bumps 77 and 78, and further to the mounting substrate 79 via the electrode 75.

In recent years, the current supplied to the composite light emitting element is
= 20 mA to 100 mA to increase the brightness.

[0011]

However, IF =
At a large current of 100 mA, general bullet-type LEDs and chip LEDs do not have sufficient heat dissipation characteristics, so that the light emission efficiency and reliability are significantly reduced due to heat. Therefore, the present inventor proposed a semiconductor light emitting device having improved heat dissipation characteristics in Japanese Patent Application No. 2001-276312. This is shown in FIG.

FIG. 13A is a front sectional view of a semiconductor light emitting device using a composite light emitting element, and FIG. 13B is a plan view of the same semiconductor light emitting device.

The semiconductor light emitting device 81 includes a composite light emitting element 70.
And a heat dissipation block 82 that is connected to the composite light emitting element 70 in a heat transferable manner and is electrically connected to serve as a first electrode.
A sleeve 83 which is provided around the heat dissipation block 82 so as to be able to transfer heat with an insulating film interposed therebetween, and which is electrically connected to the composite light emitting element 70 and serves as a second electrode;
It has a heat dissipation block 82 and a resin portion 84 that seals a part of the sleeve 83. The semiconductor light emitting device 81 uses the heat dissipation block 82 and the sleeve 83 as electrodes,
Uses both heat transfer and current conduction. Compound light emitting element 7
The heat generated at 0 can be dissipated by the heat dissipation block 82.

However, in the conventional composite light emitting element 70, since the path through which heat flows from the single light emitting element 72 to the mounting substrate 79 is the same as the conduction path of the p-side electrode, when the current is increased, heat is generated. There is a problem that noise enters the circuit and the operation of the composite light emitting device becomes unstable.

Also, in the semiconductor light emitting device using this composite light emitting element, since the heat dissipation block also serves as the P electrode, there is a problem that the operation becomes unstable and practical application is difficult.

Therefore, an object of the present invention is to provide a semiconductor light emitting device which has good heat dissipation characteristics and can prevent noise, and a lighting light emitting device using the semiconductor light emitting device.

[0017]

In the semiconductor light emitting device of the present invention, since the heat dissipation block and the pair of electrode blocks are provided in an insulated state, the heat dissipation path and the conduction path are separated.

According to the present invention, it is possible to obtain a semiconductor light emitting device having good heat dissipation characteristics and capable of preventing noise.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention is a semiconductor light emitting device comprising a single light emitting device having a pair of electrodes formed on one surface of a semiconductor thin film layer laminated on a transparent substrate, A heat radiation block provided below the semiconductor light emitting element via an insulating layer and a pair provided adjacent to the heat radiation block and electrically connected to the pair of electrodes of the semiconductor light emitting element. A semiconductor light emitting device having an electrode block, wherein the semiconductor light emitting element, the heat dissipation block and a part of the electrode block are sealed with resin. Since a heat dissipation path for transmitting heat to the block is formed, and two conduction paths for passing a current from the pair of electrodes of the single light emitting element to the electrode block are formed, most of the heat generated from the single light emitting element is formed. The absorbed by the heat sink block has the effect of preventing mixing of noise into the conduction path.

According to a second aspect of the present invention, the semiconductor light emitting element has a composite light emitting element including the single light emitting element and a Si submount element, and the Si submount element is provided under the single light emitting element. And a pair of electrodes of the single light-emitting element are respectively connected to the two electrodes in a conductive state. 1 is a semiconductor light emitting device according to 1, and by providing a Si submount element having an insulating film formed on the lower surface, heat is transferred to the heat dissipation block via the insulating film while maintaining the electrostatic protection function. A heat dissipation path and a conduction path for allowing a current to flow from the two electrodes formed on the upper surface to the electrode block are formed, which has the effect of separating heat dissipation and conduction.

According to a third aspect of the present invention, a plurality of the single light emitting elements are provided on the Si submount element, and the pair of electrodes of each are directly or auxiliary wiring to the two electrodes of the Si submount element. 3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is bonded via
The i-submount element has a large size, and the heat generated from a plurality of single light-emitting elements has the effect of moving to the heat dissipation block via one Si submount element.

According to a fourth aspect of the present invention, in the semiconductor light emitting device according to any one of the first to third aspects, the heat dissipation block and the electrode block are formed in a rectangular plate shape. There is an effect that the whole is formed thin.

According to a fifth aspect of the present invention, the heat dissipation block is formed in a cylindrical shape, and the pair of electrode blocks are
The semiconductor light emitting device according to any one of claims 1 to 3, wherein the semiconductor light emitting device is formed in an arc shape in cross section and is attached to each of the heat dissipation blocks via an insulating portion. It has the effect of being formed into a bullet shape.

According to a sixth aspect of the present invention, there is provided a fixing portion to which the heat dissipation block and the two electrode blocks of the semiconductor light emitting device according to the fourth or fifth aspect are attached in a detachably attached manner. Since the light emitting device for lighting is characterized in that the heat dissipation block and the electrode block are attached respectively, the heat dissipation path and the conduction path are separated, and the operation is stabilized.

The invention according to claim 7 is characterized in that an umbrella-shaped hood covering the periphery is provided in a region of the fixing portion which is connected to the heat dissipation block. Since it is a light-emitting device for use and has an umbrella-shaped hood, it has the effect of increasing the amount of light and further improving the heat dissipation, thereby increasing the operating current.

FIG. 1 shows an embodiment of the present invention.
9 to 9 will be described.

(First Embodiment) FIG. 1A is a front view of a semiconductor light emitting device according to the first embodiment of the present invention, and FIG.
2A is a plan view of the semiconductor light emitting device, FIG. 2A is a plan view of a composite light emitting element used in the semiconductor light emitting device, and FIG. 2B is a front sectional view of a composite light emitting element used in the semiconductor light emitting device.
FIG. 3C is a plan view of a Si submount element used for the composite light emitting element, and FIG. 3 is a circuit diagram of the composite light emitting element.

As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 includes a single light emitting element 2 which is an example of four semiconductor light emitting elements, and a single Si submount element 3 on which these are mounted.
And a composite light emitting element 25 including

In the semiconductor light emitting device 1, the composite light emitting element 25, the heat dissipation block 4 provided below the Si submount element 3, and the pair of electrode blocks 5 provided on both sides of the heat dissipation block 4. 6 and 6.

The single light emitting element 2 has a pair of lower surface (one surface) of the semiconductor thin film layer laminated by the GaN blue light emitting element in which the n-type and p-type GaN compound semiconductor thin film layers are laminated on the transparent substrate of sapphire. Electrodes (n electrode and p electrode) are formed respectively. The four single light emitting elements 2 are connected as shown in FIG. 3 by the auxiliary wiring 8a of the submount element 3. Then, the phosphor 12 is integrally molded and emits white light.

In the Si submount element 3, one Zener diode 3a is formed, and two electrodes 7 and 8 are formed on the upper surface.
And the auxiliary wiring 8a, and these two electrodes and the auxiliary wiring 8
A pair of electrodes of each single light emitting element 2 is joined by a as shown in the circuit diagram of FIG. 3, and an insulating film 9 made of, for example, SiO ₂ is formed on the lower surface.

The heat dissipation block 4 is a copper block formed in a rectangular plate shape, and a concave portion is formed in the upper portion where the Si submount element 3 is arranged so as to reflect light in the horizontal direction upward. It is silver plated.

The electrode blocks 5 and 6 are formed in a rectangular plate shape and are arranged on both sides (adjacent positions) of the heat dissipation block 4 with a gap therebetween. The electrodes 7 and 8 of the Si submount element 3 are bonded to the bonding wires 10 and 6. It is connected via 11. The gap between the heat dissipation block 4 and the electrode blocks 5, 6 and the upper portions of the heat dissipation block 4 and the electrode blocks 5, 6 are molded with a transparent resin having an insulating property.

With this structure, the main heat generated from the composite light emitting element 25 is transmitted to the heat dissipation block 4, and the current is applied to the electrodes 7 and 8 of the Si submount element 3 of the composite light emitting element 25.
And to both electrode blocks 5 and 6. Although a little heat is generated due to the current flowing through the bonding wires 10 and 11, since the electrode blocks 5 and 6 are provided,
The temperature rise is small and there is almost no noise.

As shown in FIG. 3, the semiconductor light emitting device 1 includes
Two of the four formed light emitting diodes are connected in parallel.

FIG. 4 is a plan view of a fixed panel provided with a plurality of semiconductor light emitting devices.

The fixed panel 16 is a rectangular plate-like member made of Cu or Al, and has an insulating film 17d formed on the surface and Au wiring portions 17a and 17b formed on the insulating film 17d.
An insulating film 17d is opened at the portion c. The semiconductor light emitting device 1 has a fixing portion 13 to which four (a plurality of) semiconductor light emitting devices 1 can be attached, and the fixing portion 13 is provided at each corner of the two electrode blocks 5 and 6 of each of the attached semiconductor light emitting devices 1. Wiring portions 17a connected to the electrodes 14 and 15 respectively,
It has a region 17c which is connected to 17b and the heat dissipation block 4 and which allows heat to efficiently flow to the plate member. In the semiconductor light emitting device 1, the wiring portions 17a and 17b of the fixed portion 13 and the electrode blocks 5 and 6 are bonded by solder or the like to form a conduction path, and the region 17c and the heat radiation block 4 are bonded by a good heat conductive paste or the like to radiate heat. Forming a path.

FIG. 5A is a front sectional view of a lighting light emitting device using a fixed panel, and FIG. 5B is a partially enlarged sectional view of the lighting light emitting device.

The illumination light emitting device 18 is the semiconductor light emitting device 1.
Has a fixed panel 16 attached to the fixed portion 13, and an umbrella-shaped hood 19 that covers the upper surface and the periphery of the fixed panel 16 and reflects the light heading laterally from the semiconductor light emitting device 1 downward. This umbrella-shaped hood 19 includes a fixed panel 16
It is connected to the plate-shaped member so that heat can be transferred, and heat is efficiently released to the outside.

The fixed panel 16 is made of a metal made of Al, Cu or an alloy thereof, and can diffuse and release the heat transmitted from the semiconductor light emitting device 1.

The hood 19 has a high light reflectance A on its inner peripheral surface.
It is made of metal coated with g or a white pigment, and a converter 20 connected to a commercial AC power source for converting into DC is arranged at the upper end. The electrodes 14 and 15 of the fixed panel 16 are insulated from the hood 19. Connected and supplying current.

With this structure, the heat generated from the single light emitting element can be quickly released, so that the current can be increased and the brightness corresponding to the increased current can be increased.

(Second Embodiment) FIG. 6A is a front sectional view of a semiconductor light emitting device according to a second embodiment, FIG. 6B is a plan view of the same semiconductor light emitting device, and FIG. FIG. 4 is a front sectional view of a lighting light emitting device using the semiconductor light emitting device according to the embodiment.

The semiconductor light emitting device 21 includes a composite light emitting element 25.
The heat dissipation block 22 and the electrode blocks 23 and 24 are connected to the.

The heat dissipation block 22 is formed in a cylindrical shape,
The composite light emitting element 25 is mounted on the flat surface on one side.

The center angles of the electrode blocks 23 and 24 are 18
The cross-section is formed in an arc shape slightly smaller than 0 degree, and is provided so as to face the outer peripheral surface of the heat dissipation block 22 via a cylindrical insulating portion 26.

With this structure, the main heat generated from the composite light emitting element 25 is transmitted to the heat dissipation block 22, and the current is
The electrode 7 of the Si submount element 3 of the composite light emitting element 25,
8 and both electrode blocks 23 and 24.

The light emitting device 27 for illumination is the semiconductor light emitting device 2.
It has a fixed part 28 to which 1 is attached, and an umbrella-shaped hood 29 that covers the upper part and the periphery of the fixed part 28.

The fixing portion 28 is provided in the mounting hole 30 formed in the hood 29 and does not penetrate, and is a leaf spring for biasing and fixing the heat radiation block 22 of the semiconductor light emitting device 21 inward in the radial direction. Is provided outside the mounting hole 30 with the insulating layer 35 interposed therebetween, and the electrode blocks 23 and 24 are biased and fixed inward in the radial direction and electrically connected to the converter 34. Urging members 32 and 33 made of metal leaf springs. The biasing members 32 and 33 are connected to the electrode blocks 23 and 24 to form a conduction path, and the biasing member 31 is connected to the heat dissipation block 22 to form a heat dissipation path.

By forming the shape of the mounting hole 30 and the shape of the heat dissipation block 22 into, for example, a D shape, it is possible to prevent misconnection of polarities and the like.

(Third Embodiment) FIG. 10A is a front view of a semiconductor light emitting device according to a third embodiment of the present invention.
FIG. 3B is a partially enlarged front sectional view of the semiconductor light emitting device.

As shown in FIG. 10, in the semiconductor light emitting device 41 according to the third embodiment, instead of the composite light emitting device 25 of the semiconductor light emitting device 1 of the first embodiment, a single light emitting device 42 is used as a semiconductor light emitting device. It is used as an element. Since the other members have the same configuration as the semiconductor light emitting device 1 according to the first embodiment, the same members are designated by the same reference numerals and the description thereof will be omitted.

The single light emitting element 42 comprises a pair of electrodes 43, 4
4 on the heat dissipation block 4 with the insulating paste 45 facing upward.
Are placed through. The pair of electrodes 43, 44 are directly connected to the electrode blocks 5, 6 via bonding wires 46, 47.

(Fourth Embodiment) FIG. 11A is a front sectional view of a semiconductor light emitting device according to a fourth embodiment, and FIG. 11B is a plan view of the same semiconductor light emitting device.

As shown in FIG. 11, the semiconductor light emitting device 48 according to the fourth embodiment has a third embodiment instead of the composite light emitting element 25 of the semiconductor light emitting device 21 according to the second embodiment. The single light emitting element 42 according to the above is used as a semiconductor light emitting element.

The single light emitting element 42 is arranged on the heat dissipation block 22 and is connected to the electrode blocks 23 and 24 via bonding wires 49 and 50.

(Other Embodiments) FIG. 8 is a circuit diagram of a composite light emitting device according to another embodiment.

As described above, it is possible to connect the four single light emitting elements 2 in series.

FIG. 9A is a plan view of a composite light emitting device according to still another embodiment, and FIG. 9B is a front sectional view of the composite light emitting device.

The composite light emitting device 37 is one in which one single light emitting device 2 is mounted on one Si submount device 36 having an insulating film 40 formed on the back surface thereof, and forms a pn junction Zener diode 36a. With such a configuration, the entire size including the electrodes 38 and 39 can be reduced.

[0061]

As described above, the present invention has the following effects. (1) Since the heat dissipation block provided on the lower side of the semiconductor light emitting element and the pair of electrode blocks joined to the two electrodes of the semiconductor light emitting element are formed in an electrically insulated state, Since the conductive paths are formed separately, most of the heat transferred from the single light emitting element to the Si submount element is absorbed by the heat dissipation block, and it is possible to prevent noise from flowing into the conductive paths. (2) By providing the Si submount element having the insulating film formed on the lower surface, while maintaining the electrostatic protection function,
A heat dissipation path for transmitting heat to the heat dissipation block via the insulating film and a conduction path for allowing a current to flow from the two electrodes formed on the upper surface to the electrode block are separately formed, so that noise sneak due to heat can be prevented. (3) By providing a plurality of single light emitting elements on the Si submount element, the Si submount element becomes large, and the heat generated from the plurality of single light emitting elements moves to the heat dissipation block via one Si submount element. Therefore, heat is efficiently dissipated. (4) By forming the heat dissipation block and the electrode block in the shape of a rectangular plate, it is possible to provide a thin lighting device that is thin in its entirety. (5) By forming the heat dissipation block in a cylindrical shape and forming the pair of electrode blocks in an arc shape in cross section, the entire semiconductor light emitting device is formed in a cylindrical shape or a bullet shape, and can be easily attached and detached. (6) Since the heat dissipation block and the electrode block are attached to the lighting light emitting device, respectively, the heat dissipation path and the conduction path are separated from each other, and unstable operation due to sneak of noise can be prevented to stabilize the operation. (7) By having a configuration including an umbrella-shaped hood,
The heat dissipation is further improved, and the operating current can be increased.

[Brief description of drawings]

FIG. 1A is a front view of a semiconductor light emitting device according to a first embodiment of the present invention, and FIG. 1B is a plan view of the semiconductor light emitting device.

2A is a plan view of a composite light emitting element used in the same semiconductor light emitting device, FIG. 2B is a front sectional view of a composite light emitting element used in the same semiconductor light emitting device, and FIG. Plan view of Si submount device

FIG. 3 is a circuit diagram of a composite light emitting element of the semiconductor light emitting device.

FIG. 4 is a plan view of a fixed panel provided with a plurality of semiconductor light emitting devices.

5A is a front cross-sectional view of a lighting light-emitting device using a fixed panel, and FIG. 5B is a partially enlarged cross-sectional view of the lighting light-emitting device.

FIG. 6A is a front sectional view of a semiconductor light emitting device according to a second embodiment, and FIG. 6B is a plan view of the same semiconductor light emitting device.

FIG. 7 is a front sectional view of a lighting light emitting device using a semiconductor light emitting device according to a second embodiment.

FIG. 8 is a circuit diagram of a composite light emitting device according to another embodiment.

FIG. 9A is a plan view of a composite light emitting device according to still another embodiment, and FIG. 9B is a front sectional view of the composite light emitting device.

FIG. 10A is a front view of a semiconductor light emitting device according to a third embodiment of the present invention, and FIG. 10B is a partially enlarged front sectional view of the semiconductor light emitting device.

FIG. 11A is a front sectional view of a semiconductor light emitting device according to a fourth embodiment, and FIG. 11B is a plan view of the semiconductor light emitting device.

FIG. 12A is a plan view of a composite light emitting device according to a conventional example. (B) is a front sectional view of the same composite light emitting device

13A is a front sectional view of a semiconductor light emitting device using the same composite light emitting element, and FIG. 13B is a plan view of the semiconductor light emitting device.

[Explanation of symbols]

1 Semiconductor light emitting device 2 Single light emitting element 3 Si submount element 3a Zener diode 4 heat dissipation block 5, 6 electrode block 7,8 electrodes 8a auxiliary wiring 9 Insulating film 10,11 Bonding wire 12 Phosphor 13 Fixed part 14,15 electrodes 16 fixed panel 17a, 17b Wiring part 17c area 17d insulating film 18 Light emitting device for lighting 19 hood 20 converter 21 Semiconductor light emitting device 22 Heat dissipation block 23, 24 electrode block 25 Compound light emitting element 26 Insulation part 27 Light-emitting device for lighting 28 Fixed part 29 Hood 30 mounting holes 31 biasing member 32, 33 biasing member 34 converter 35 Insulation layer 36 Si submount element 36a Zener diode 37 Compound light emitting element 38, 39 electrodes 40 insulating film 41 Semiconductor light emitting device 42 Single light emitting element 43,44 electrodes 45 Insulating paste 46,47 Bonding wire 48 Semiconductor light emitting device 49,50 Bonding wire

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Claims (7)

[Claims] 1. A semiconductor light emitting element comprising a single light emitting element having a pair of electrodes formed on one surface of a semiconductor thin film layer laminated on a transparent substrate, and a semiconductor light emitting element provided below the semiconductor light emitting element with an insulating layer interposed therebetween. The heat dissipation block and a pair of electrode blocks that are provided adjacent to the heat dissipation block and electrically connected to the pair of electrodes of the semiconductor light emitting device. A semiconductor light emitting device, wherein a block and a part of the electrode block are sealed with a resin. 2. The semiconductor light emitting device has a composite light emitting device including the single light emitting device and a Si sub-mount device, and the Si sub-mount device is disposed below the single light emitting device and is on the upper surface. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device comprises two electrodes, an insulating film is formed on a lower surface thereof, and the pair of electrodes of the single light emitting element are respectively connected to the two electrodes in a conductive state. . 3. A plurality of the single light emitting elements are provided on the Si sub-mount element, and the pair of electrodes of each are bonded to the two electrodes of the Si sub-mount element directly or via auxiliary wiring. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is a semiconductor light emitting device. 4. The heat dissipation block and the electrode block are formed in a rectangular plate shape.
4. The semiconductor light emitting device according to any one of items 1 to 3. 5. The heat dissipation block is formed in a cylindrical shape,
The pair of electrode blocks are formed in an arc shape in cross section,
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is attached to each of the heat dissipation blocks via an insulating portion. 6. A lighting device comprising a fixing portion to which the heat dissipation block and the two electrode blocks of the semiconductor light emitting device according to claim 4 or 5 are detachably and closely attached. Light emitting device. 7. The illumination light emitting device according to claim 6, wherein an umbrella-shaped hood that covers the periphery is provided in a region of the fixing portion that is connected to the heat dissipation block.