JP2003197811A - Glass substrate, manufacturing method thereof, wiring base board and semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the highly efficient working method of a through hole configuration, permitting a fine configuration, a high aspect ratio and a narrow pitch, and a semiconductor mounting module structure, in which fine wiring is formed employing the glass substrate wherein the fine through holes are formed. <P>SOLUTION: In the semiconductor mounting module employing the glass substrate having the through holes as a core substrate, the glass substrate 1 is provided with through holes 2 having a configuration that the taper of the same is changed in two stages in the hole so as to have a first inner wall inclination wherein the diameter of the hole is reduced in the shape of a truncated body from one surface of the glass substrate 1 to the half way of the same in the direction of the thickness of the substrate and, continuously to this form, a second inner wall inclination wherein the diameter is reduced in the truncated shape approximated to a cylindrical body until the outlet port of the hole whereby the through hole 2, having the diameter of the large diametral side of the hole and an average taper which are smaller compared with a through hole having a simple taper, can be obtained and the semiconductor mounting base board, having the wiring of a narrow pitch, can be achieved. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a core substrate, a wiring substrate, a semiconductor module using them, and a method for manufacturing them. For example, a substrate that is a base for mounting a semiconductor element or other electric element via a wiring layer formed on the surface thereof, such as a core substrate in a multi-chip module, a multi-chip package or a build-up wiring board, In particular, the present invention relates to a through-hole shape of a glass substrate with fine through-holes and a manufacturing method thereof.

[0002]

2. Description of the Related Art A multi-chip module or a multi-chip package is one in which a plurality of semiconductor chips and passive electric elements are densely mounted on a base core substrate through a fine wiring layer to form one functional module. Then, for example, these are mounted on a mother board for use. At this time, an organic substrate such as a glass epoxy substrate or an inorganic material substrate such as a ceramic substrate is often used as the core substrate depending on the application.

[0003]

However, the generally used core substrate as described above is liable to change in the substrate dimensions or surface waviness or surface irregularities due to the material composition of the substrate or heat during the substrate manufacturing process. It is difficult to form fine wiring. In addition, when a passive electric element is formed on a substrate, it is difficult to use an organic substrate in terms of heat resistance. Further, due to the mismatch of thermal expansion between the semiconductor element mounted on the substrate and the shear stress generated in the solder connection portion of the semiconductor element and the wiring board receiving the semiconductor element, various measures are required.

Therefore, recently, there has been an attempt to form a fine through hole in a glass substrate having a thermal expansion relatively close to that of silicon and having excellent surface flatness and heat resistance to form a core substrate. However, the method of using a glass substrate with through holes as a core substrate has a problem that it is extremely difficult to efficiently form a large number of fine through holes with good cylindricity in glass which is an amorphous brittle material.

On the other hand, as a wiring board using a glass thin plate having fine through holes as a core substrate, for example, the photosensitive material disclosed in Japanese Patent Laid-Open No. 2001-44639, "Multilayer Printed Wiring Board and Manufacturing Method Therefor" is disclosed. There is a method of using a transparent glass. This is LiO ₂ − containing Au and Ce.
The core substrate is an Al ₂ O ₃ -SiO ₂ -based chemically-cutting photosensitive thin glass plate, and only the portion corresponding to the through hole is exposed to ultraviolet light and then heat-treated to locally crystallize the exposed portion. Then, the crystallized portion is selectively removed by chemical etching to form a through hole.

This method is excellent in that fine through holes having a smooth inner wall can be formed by using a photolithography process. However, since the photosensitivity is required, the glass material is limited, There is a problem of high cost. In addition, in order to increase the strength, it is necessary to finally sinter at a high temperature for a long time, as with a ceramic substrate. Also, compared with the substrate thickness range used for the current small-sized high-density wiring substrate core substrate. In case of single-sided exposure, it is necessary to perform double-sided exposure because ultraviolet light does not reach the back side. For these reasons, lower throughput and higher process cost are inevitable.

Further, as the technique capable of forming the through holes in the glass substrate as described above, there are, for example, ultrasonic processing, sandblast processing, laser processing, electron beam processing, etc. It is considered that there is no processing method that satisfies all the requirements such as chipping and efficiency.
Therefore, development of a method for processing a large number of fine through-holes having good cylindricity with a narrow pitch and high efficiency is an important issue for practical use.

Therefore, an object of the present invention is to provide a through-hole shape that enables fineness, a high aspect ratio, and a narrow pitch, and a high-efficiency processing method thereof.

Another object of the present invention is to provide a semiconductor mounting module structure in which fine wiring is formed by using a glass substrate in which fine through holes are formed.

[0010]

In order to achieve the above object, a brief description will be given to the outline of typical inventions among the inventions disclosed in the present application.

That is, according to the present invention, in a glass substrate having a through hole, the inner wall thereof has an inclination so that the diameter of the through hole decreases from one surface of the glass substrate toward the opposite surface thereof, and the inclination thereof is small. Changes in two steps in the middle of the plate thickness, and the angle of inclination of the first inner wall with respect to the central axis of the through hole is larger than the angle of inclination of the second inner wall that follows, among the inclinations of the two changes in the inner wall, The inclination angles of these inner walls are both smaller than 90 degrees.

In the production of this glass substrate, a method of processing by a sand blast method is adopted, and a dry film resist having an opening and having a high blast resistance is laminated on the glass substrate to obtain a high directivity, a small flow rate and a high speed fine grain. With the abrasive particle jet, the taper changes internally in two steps so that the abrasive particle irradiation surface has a mortar shape halfway in the plate thickness direction, and then the shape to the exit is close to a cylindrical shape. It forms a hole.

Therefore, according to the present invention, it becomes possible to process fine high aspect ratio holes at a narrow pitch as compared with a simple tapered mortar-shaped through hole. As a result, since it is possible to form the through-hole having a good cylindricity and a high aspect ratio, it is possible to provide a glass substrate for a wiring board having a narrow pitch and a high mounting density. Furthermore, a semiconductor mounting module having fine wiring can be provided by using a glass substrate having fine through holes and having good flatness.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Specific embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 shows an embodiment of the present invention and is a partial cross-sectional view showing an example of a semiconductor mounting module using a glass substrate having a through hole according to the present invention as a core substrate. In FIG. 1, 1 is a glass substrate, 2 is a through hole formed in the glass substrate 1, 3 is a conductor plug filled in the through hole 2, 4 is a wiring, 5 is an insulating layer, 6 is a wiring 4 and an insulating layer 5. Is a rewiring layer, 7 is a backside wiring, 8 is a solder resist, 9 is a solder ball, 10 is a semiconductor element (semiconductor chip), and 11 is a backside solder ball.

In the present embodiment, although not particularly limited, for example, the glass substrate 1 having a plate thickness of 0.5 mm is provided with through holes 2 having a two-step inner wall inclination in the plate thickness direction at a pitch of 0.5 mm. Is forming. The through-hole 2 has a first inner wall surface that forms an angle of about 81 degrees with the plate surface, and a second inner wall surface that follows the first inner wall surface that forms an angle of about 85 degrees and has an inlet diameter of about The exit diameter is about 0.1 mm at 0.2 mm. The conductor plug 3 is formed by filling the inside of the through hole 2 with an electrically conductive glass paste including a metal powder, a low melting point glass powder, an organic binder and a solvent, and drying and firing.

Next, a rewiring layer 6 in which wirings 4 and insulating layers 5 are alternately laminated is formed on the surface of the through hole 2 on the side where the hole diameter is small. This rewiring layer 6 expands the terminal pitch of the semiconductor element 10 to the substrate pitch level on the user side. Next, after the back wiring 7 and the solder resist 8 are formed, the semiconductor element 10 is mounted via the solder balls 9. Finally, the backside solder balls 11 are mounted to complete the semiconductor mounting module.

In addition to the method described here, a method of forming a conductor layer on the inner wall of the through hole 2 may be used for making the through hole 2 conductive. This is a method in which a thin film of chromium, titanium or the like is formed on the inner wall of the through hole 2 by a method such as sputtering or vacuum deposition, and a copper thin film conductor layer or the like is formed by a method such as plating using the thin film as a seed film. Finally, the inside of the through hole 2 is sealed with a resin such as epoxy or polyimide to complete the formation of a conductor.

The material of the glass substrate 1 includes, for example, soda glass, low-alkali glass, non-alkali glass, and ion-strengthened glass. Considering the workability of applying the sandblast method when forming the through holes 2. In addition to the above, a suitable glass material may be appropriately selected in consideration of the elastic modulus and the coefficient of linear expansion that affect the connection reliability when the semiconductor element 10 is mounted.

FIG. 2 is an example of an external view of a semiconductor mounting module whose partial cross section is shown in FIG. 1, showing a multi-chip module (hereinafter referred to as MCM) in which a plurality of LSI chips are mounted on a substrate. Here is an example. In FIG. 2, reference numeral 12 denotes a semiconductor element (semiconductor chip) different from 10, reference numeral 13 denotes a passive element component, and reference numeral 14 denotes a completed MCM.

The semiconductor elements 10 and 12 mounted on the glass substrate 1 are, for example, a logic LSI and a memory LSI.
It may be selected according to the purpose of use. Further, the passive element component 13 is also selected according to the purpose such as a capacitor, an inductor, a resistor, or a combination thereof. In this example, the number of semiconductor elements 10 and 12 to be mounted is five, but the type and number of semiconductor elements to be mounted naturally vary depending on the design of MCM 14.

FIG. 3 shows the appearance of a substrate on which a large number of the MCMs shown in FIG. 2 are simultaneously formed. In FIG. 3, reference numerals 21 and 22 denote cutting lines.

Each MCM 14 is mounted on the glass substrate 1.
However, it is advantageous in terms of cost to carry out the process at the glass substrate level having such a large area and finally cut it into individual MCMs 14 by a method such as dicing. That is, a large number of MCs are mounted on the glass substrate 1.
After mounting M14 at the same time, a large number of MCMs 14 can be obtained by cutting the glass substrate 1 along the cutting lines 21 and 22 and individually separating.

Next, a method for realizing the shape of the through hole having the two-step inclination on the inner wall according to the embodiment of the present invention will be described. There are laser processing, electron beam processing, reactive ion etching, chemical etching, drill processing, ultrasonic processing, sand blast processing, etc. as processing methods that may form the through holes 2 in the glass substrate 1, but fine processing. It is considered that there is no drilling method at the present time that satisfies all of the characteristics, hole quality, mass productivity, etc. On the other hand, the shape of the through hole 2 to which the present invention is applied can be achieved by the improved sandblasting method.

4 (a) to 4 (e) are schematic process diagrams of through holes formed in a glass substrate. In FIG. 4, 31 is a photosensitive dry film resist, 32 is an exposure mask, and 33
Is ultraviolet light, 34 is an opening pattern formed on a dry film, and 35 is an abrasive particle jet.

First, a photosensitive dry film resist 31 is attached to the surface of the glass substrate 1 (a). The dry film resist 31 serves as a mask material for sandblasting. The method of attaching the dry film resist 3 is not specified, but the dry film resist 3 is formed by using, for example, a vacuum laminator.
It is preferable that air bubbles are not caught in the interface between the glass substrate 1 and the glass substrate 1.

Then, the ultraviolet light 3 is passed through the exposure mask 32.
When 3 is irradiated, the exposed portion of the dry film resist 31 is exposed (b). After that, development is performed to form an opening pattern 34 in the dry film resist 31 (c). At this time, the example of FIG. 4 is an example in which a negative resist is used, and a portion not exposed to light is removed by development. In the present embodiment, development was performed in a weak alkaline solution using a polyurethane dry film resist.

Next, when the glass substrate 1 is irradiated with the high speed abrasive particle jet 35 using the dry film resist 31 having the opening pattern 34 as a mask, the glass substrate 1 is crushed and removed through the opening pattern 34 by the abrasive particles. Processing progresses, and the through hole 2 is finally formed (d). Then, when the dry film resist 31 is finally removed, the glass substrate 1 with the through holes 2 is obtained (e).

In this step, the point of forming the through hole 2 in which the gradient of the inner wall changes in two steps is to promote the secondary collision of the abrasive with the side wall of the hole during sandblasting.

First, a high-speed fine-grain abrasive particle jet with a good directional divergence angle of 1 to 2 degrees and a mask material that is less consumed in the radial direction of the opening due to the impact of the abrasive are prepared.
There are several conceivable mask materials, and one of them is the photosensitive dry film resist 31 described in the embodiment of FIG. Among the organic materials, a polyurethane-based photosensitive dry film resist 31 having a high elastic modulus and easily absorbing the impact energy of the abrasive is particularly suitable.

Although not an organic material, a metal material having a toughness and a large elastic modulus can be used as the mask material. At this time, a metal material that can be uniformly adhered to the surface of the glass by a chemical or physical method such as plating, vacuum deposition, or sputtering is preferable. The higher the sandblast resistance of the mask material, the better, but it is preferable that the processing rate by sandblast is at least about 3 μm / min or less. This can be achieved by optimizing the type of dry film, exposure conditions, and post-baking conditions.

On the other hand, as an abrasive, the polishing rate is high,
In addition, in order to facilitate entry into and discharge from the through hole 2, a hard and fine particle size is used. For example, aluminum oxide or silicon carbide # 600 to # 1200 (average particle size 20 to 9.5 μm) is preferable. It is also possible to use finer abrasive grains, but the number of collisions with the mask material increases, and at the same time, because the processing rate decreases, it is necessary to irradiate for a long time, so the mask material decreases greatly. Also, because it becomes difficult to manage and handle the abrasive grains,
There are few merits. Abrasive flow rate is 150-200g /
About min is good. On the other hand, it is necessary to increase the flow rate of the abrasive, and at least about 80 to 200 m / s, in order to avoid a reduction in processing efficiency due to the finer abrasive and a decrease in the flow rate.

When the glass substrate 1 is irradiated with the abrasive through the opening of the dry film resist 31, a hole having an inverted truncated cone shape is formed in the initial stage. At this time, the abrasive easily stays in the hole bottom corner portion, and since it becomes a mask, the flat portion area of the hole bottom is reduced as the machining progresses, and the hole approaches an inverted conical shape. Eventually it becomes almost an inverted cone. From this stage onwards, the secondary collision of the abrasive reflected on the side wall of the inverted conical hole causes the machining to proceed in the direction in which the hole diameter near the hole bottom expands, so that the hole wall slopes sharply. The hole gets deeper. In this way, the through hole 2 having a two-step inclination is formed on the inner wall.

Further, the through hole 2 having the two-stage inclination on the inner wall
As another method for forming the above, there is a method in which the abrasive is changed to one having a small particle size during the processing. For example, the processing is started with the # 600 abrasive and is changed to # 800 on the way.
Machining with a large polishing rate up to the point where the hole becomes an inverted cone with # 600, and then changing to # 800 facilitates the entry of abrasives into the hole bottom, thus facilitating machining in the depth direction. . The processing rate does not decrease so much as compared with the case where the fine abrasive is used from the initial stage. The feature of this method is that since the fine-grained abrasive is used in the latter half of the processing, hole edge chipping on the back surface side when the hole penetrates can be suppressed small. In other words, the quality is better. When actually processing, a processing stage for ordinary grains and a processing stage for fine grains are required.

On the other hand, the conventional sandblasting method for drilling a glass substrate is generally # 220-240.
It is performed by spraying a large amount of a hard abrasive such as silicon carbide having a relatively coarse count (average particle size of about 60 to 70 μm) from a circular nozzle. At this time, the divergence angle of the jet is usually about 6 degrees in total. In this method, since the abrasive particle jets that have exited the nozzle diverge, the flow velocity component in the radial direction of the abrasive particle jets increases, and the spread of the dry film resist in the radial direction of the openings increases.

Further, since the abrasive has a large particle size, the abrasive stays at the bottom of the processed hole, and it serves as a mask to preferentially process the side surface of the hole. It becomes a mortar-shaped large-diameter through hole with a droop at the entrance. Further, when the opening diameter of the dry film is less than φ0.3 mm and the plate thickness of the glass substrate exceeds 0.5 mm, it is processed in the depth direction by the mask effect of the abrasive retained at the bottom of the hole. In many cases, the hole does not penetrate and the hole does not penetrate. Therefore, for example, when a through hole having a diameter of 0.5 mm or less is formed by a normal sandblasting method, the plate thickness and the hole inlet diameter ratio are limited to about 1 to 1.5.

Compared to the through hole obtained by the conventional method described above, in the method of positively utilizing the secondary collision on the inner wall surface to which the present invention is applied, the inner wall inclination is made into two stages, Since holes having an average small inclination can be formed as compared with the mortar-shaped through holes formed by the above-described conventional method, the through holes 2 having a smaller hole diameter can be obtained.

In the above embodiment, 0.5 m
An example in which the through holes 2 having a large diameter side diameter of 0.2 mm and a small diameter side diameter of 0.1 mm are formed at a pitch of 0.5 mm by the sandblast method on the glass substrate 1 having a thickness of m has been described. It will change. For example, the thickness of the substrate is determined by the total thickness of the MCM 14, but considering the ease of forming the minute through holes 2 and handling a large-area substrate for multi-cavity, the thickness of the substrate is taken into consideration. The thickness is preferably in the range of about 0.3 to 0.7 mm, and is a range in which the method to which the present invention is applied can be sufficiently processed.

However, if handling is performed with a small substrate size, a substrate thickness of about 0.1 to 0.2 mm may be used. Regarding the hole pitch, it depends on the wiring rule of the user side board on which the MCM14 is mounted, but it is currently 0.
The minimum is about 5 mm. However, if the shape of the through holes 2 to which the present invention is applied is used, a pitch of about 0.3 mm is possible when the substrate thickness is 0.5 mm. When the substrate is thinner, the through holes 2 having a smaller diameter can be formed, and the pitch can be reduced.

Further, as a feature of the formation of the through holes 2 according to the present invention, the hole wall surface is linearly or concavely shaped by appropriately setting the flow velocity and flow rate of the abrasive particle jet and the sandblast resistance of the dry film resist 31. It is possible to

FIGS. 5A to 5G show another manufacturing process for obtaining the shape of the through hole according to one embodiment of the present invention, which is an example of using a metal thin film as a mask material. . In FIG. 5, 41 is a titanium thin film, 42 is a copper thin film, 4
3 is a photosensitive resist, 44 is an opening pattern formed in the photosensitive resist 43, and 45 is a mask opening formed in the copper thin film 42.

First, a titanium thin film 41 is formed on the surface of the glass substrate 1 (a), and a copper thin film 42 is formed thereon by plating as a seed film (b). Then, a photosensitive resist 43 is formed on the copper thin film 42 (c). Then, an opening pattern 44 is formed in the photosensitive resist 43 by exposure and development (d). Then, this opening pattern 4
4 is used as a mask to remove the copper thin film 42 and the titanium thin film 41 by chemical etching and the like, and then the photosensitive resist 43 is removed to form the mask opening 4
5 is formed (e). The photosensitive resist 43 on the copper thin film 42 may be either a negative type or a positive type.

Next, when the high speed abrasive particle jet 35 is irradiated on the copper thin film 42 having the mask opening 45, the glass substrate 1 is crushed and removed through the mask opening 45 of the copper thin film 42 to form a hole (f ). Finally, the through hole 2
After forming, the copper thin film 42 is removed to obtain the glass substrate 1 with the through holes 2 (g). Here, in the present embodiment, the titanium thin film 41 has a film thickness of 0.1 μm, and the copper thin film 42 has a film thickness of 50 μm.

The copper thin film 42 may be thinned to a desired thickness by chemical etching or the like without being removed, and may be patterned as it is to be used as a conductor wiring. Further, as the seed film formed on the surface of the glass substrate 1, chromium may be used instead of titanium.

FIG. 6 shows the outline of the cross-sectional shape of a typical through hole obtained by applying the present invention. As shown in FIG. 6, normally, inclined inner walls 51 and 52 having a concave shape when viewed from the central axis side of the through hole 2 are formed. That is, from the upper surface of the glass substrate 1 to an intermediate position in the plate thickness direction,
A first inner wall 51 that inclines in a direction in which the diameter decreases from the upper surface toward the middle position, and the first inner wall 51, and connects from the middle position in the plate thickness direction to the lower surface of the glass substrate 1,
The second inner wall 52 that inclines in the direction in which the diameter decreases from the middle position toward the lower surface is both formed in a concave shape with respect to the central axis of the through hole 2 in the cross section in the plate thickness direction.

FIG. 7 is an example of another through-hole-shaped cross section according to the application of the present invention, in which the inner wall 61 having the first slope is linear and the inner wall 6 having the second slope is 6 respectively.
2 is an example having a concave shape when viewed from the central axis side. That is, the first inner wall 61 is formed in a linear shape in the cross section in the plate thickness direction, and the second inner wall 62 is formed in a concave shape with respect to the central axis of the through hole 2 in the cross section in the plate thickness direction.

FIG. 8 is a view showing a cross section of still another through-hole shape according to the application of the present invention, in which the inner walls 71 and 72 having the first and second slopes are both linear.
That is, both the first inner wall 71 and the second inner wall 72 are formed in a linear shape in the cross section in the plate thickness direction.

As described above, according to the embodiment to which the present invention is applied, by making the hole taper of the through hole 2 in two steps, the through hole 2 having a smaller diameter as a whole as compared with the case of a single step taper. Can be formed, and when applied to a wiring board,
Finer wiring is possible with a narrower pitch. Further, when the glass substrate 1 having the through holes 2 formed therein is used as a wiring substrate, it is necessary to conduct the inside of the through holes 2 for electrical conduction between the wirings formed on the front and back sides of the substrate. As one of the methods, there is a method of filling the through hole 2 with a conductor paste. The shape of the through hole 2 of the present invention is such that the inner wall having a curvature is inclined in two steps, so that this resin paste can be held more reliably than a simple mortar-shaped through hole.

In the above example, the through holes are formed in the glass substrate to form the semiconductor mounting substrate, but the present invention is not limited to this. For example, fine through holes are formed in a silicon wafer or ceramics to form wiring. The same method can be applied to the case.

Although the invention made by the present inventor has been specifically described based on the embodiments, the invention disclosed in the present application is summarized as follows, including the contents of the embodiments. Is the street.

(1) A glass substrate having an inner wall inclined in the plate thickness direction and having a plurality of through holes in which the inclination of the inner wall changes in two steps.

That is, the glass substrate has a through hole whose inner wall is inclined so that the diameter gradually decreases from one surface of the glass substrate in the plate thickness direction, and the inner wall of the through hole has an inclination of the glass substrate. Among the inner wall inclinations that change in stages in the middle of the plate thickness direction, the inclination angle of the first inner wall with respect to the central axis of the through hole is larger than the inclination angle of the second inner wall that follows, and The inclination angle of the inner wall of each is less than 90 degrees.

(2) In the glass substrate described in (1) above, each of the plurality of through-holes extends from the first main surface of the glass substrate to an intermediate position in the plate thickness direction, and from the first main surface to the intermediate position. A first inner wall that inclines in a direction in which the diameter decreases toward the middle position, and the first inner wall, and connects from the middle position in the plate thickness direction to the second main surface of the glass substrate, from the middle position. And a second inner wall that is inclined in a direction in which the diameter decreases toward the second main surface.

That is, the first inner wall of the through hole is inclined from one surface of the glass substrate toward the opposite surface in the thickness direction of the glass substrate in a direction in which the diameter of the through hole decreases, and the second wall following the second wall.
The inner wall of is also inclined toward the opposite surface of the glass substrate in the direction in which the diameter of the through hole decreases.

(3) In the glass substrate described in (2), the first inner wall and the second inner wall are concave with respect to the central axis of the through hole in the cross section in the plate thickness direction. A glass substrate characterized by the above.

That is, in the section of the through hole in the plate thickness direction, the shapes of the inner wall having the first inclination and the inner wall having the second inclination are both concave as viewed from the inside of the through hole.

(4) In the glass substrate described in (2), the first inner wall has a cross section in the plate thickness direction,
The glass substrate having a linear shape, wherein the second inner wall has a concave shape with respect to a central axis of the through hole in a cross section in the plate thickness direction.

That is, the inner wall having the first inclination of the through hole is linear, and the inner wall having the second inclination subsequent thereto is concave as viewed from the inside of the through hole.

(5) In the glass substrate described in (2), the first inner wall and the second inner wall are linear in a cross section in the plate thickness direction.

That is, the inner wall of the through hole having the first inclination and the subsequent inner wall having the second inclination are substantially linear when viewed from the inside of the through hole.

(6) A sand blasting method in which an opening is formed in a mask material attached to the surface of a glass substrate, and the glass substrate is crushed and removed while irradiating the glass substrate with an abrasive particle jet through the opening. A photosensitive dry film resist having an opening formed by exposure and development is used as the mask material, and a through hole is formed in the glass substrate by using the abrasive particle jet having a divergence angle of less than 5 degrees in total angle. A method of manufacturing a glass substrate, comprising:

(7) In the method of manufacturing a glass substrate as described in (6) above, the abrasive particle jet can be set by combining an abrasive particle diameter, a flow rate and a flow rate. Method for manufacturing glass substrate.

(8) A glass substrate, and a wiring layer formed on the glass substrate and comprising a conductor layer and an insulating layer,
A wiring board on which electrical components are mounted on the glass substrate via the wiring layer, wherein the glass substrate has a plurality of through holes in which an inner wall is inclined in a plate thickness direction and the inclination of the inner wall is changed in two steps. A wiring board comprising:

That is, in the wiring substrate, the glass substrate has a plurality of through holes whose inner wall is inclined in the plate thickness direction so that the diameter is large on one surface of the glass substrate and becomes smaller toward the opposite surface. In addition, the inclination of the inner wall of the through hole changes in two steps in the middle of the glass substrate in the plate thickness direction.

(9) The wiring board as described in (8) above, wherein each of the plurality of through holes of the glass substrate is filled with a conductor paste and fired.

(10) A semiconductor module comprising a glass substrate, a wiring substrate formed of a wiring layer formed on the glass substrate, and electrical components mounted on the wiring substrate, wherein the glass substrate has a plate thickness. The inner wall inclines toward
A semiconductor module having a plurality of through holes in which the inclination of the inner wall changes in two steps.

That is, in the semiconductor module, the glass substrate has a plurality of through holes whose inner wall is inclined in the plate thickness direction so that the diameter is small on the surface of the wiring layer side formed on the glass substrate and increases toward the opposite surface. Have holes,
Moreover, the inclination of the inner wall of the through hole changes in two steps in the middle of the glass substrate in the plate thickness direction.

[0068]

According to the present invention, since it is possible to form a through hole having a high cylindricity and a high aspect ratio, it is possible to provide a glass core substrate for a wiring substrate having a narrow pitch and a high packaging density.

Further, according to the present invention, when the inside of the through hole is filled with the conductor paste, the conductor paste can be held more reliably, which leads to improvement in reliability.

Further, according to the present invention, it is possible to provide a semiconductor mounting module having fine wiring by using a glass wiring board having fine through holes and having good flatness.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing a semiconductor-mounted module according to an embodiment of the present invention.

FIG. 2 is an external view showing a semiconductor mounting module according to an embodiment of the present invention.

FIG. 3 is an external view showing a multi-cavity substrate on which a plurality of semiconductor mounted modules according to an embodiment of the present invention are mounted.

4A to 4E are cross-sectional views of a glass substrate showing steps for processing a through hole in an embodiment of the present invention.

5 (a) to (g) are cross-sectional views of a glass substrate showing another step for processing a through hole in the embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a typical cross-sectional shape of a through hole in the embodiment of the present invention.

FIG. 7 is a cross-sectional view showing another cross-sectional shape of the through hole in the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing still another cross-sectional shape of the through hole in the embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Through hole, 3 ... Conductor plug, 4 ... Wiring, 5 ... Insulating layer, 6 ... Rewiring layer, 7 ... Backside wiring, 8 ... Solder resist, 9 ... Solder ball, 10 ... Semiconductor element,
11 ... Back side solder ball, 12 ... Semiconductor element, 13 ... Passive element component, 14 ... MCM, 21, 22 ... Cutting line, 31
... Photosensitive dry film resist, 32 ... Exposure mask,
33 ... Ultraviolet light, 34 ... Opening pattern, 35 ... Abrasive particle jet, 41 ... Titanium thin film, 42 ... Copper thin film, 43
... Photosensitive resist, 44 ... Opening pattern, 45 ... Mask opening, 51, 52, 61, 62, 71, 72 ... Inner wall.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05K 1/11 H05K 3/46 B 3/00 N 3/46 Q T H01L 23/12 F C (72) Inventor Kinhide Yamaguchi 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Inside Production Engineering Research Laboratory, Hitachi, Ltd. (72) Inventor Hiroyuki Hozoji 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Inside Production Engineering Research Laboratory, Hitachi, Ltd. (72) Inventor Toshiya Sato 7-1-1 Omika-cho, Hitachi-shi, Ibaraki F-term in Hitachi Research Laboratory, Hitachi, Ltd. (reference) 4G059 AA08 AB01 AB06 AB07 AB09 AB11 AC01 AC11 AC20 DA07 DA08 DB02 GA01 GA13 5E317 AA24 BB01 BB19 CC25 CD32 GG14 5E338 BB14 BB28 EE23 5E346 AA43 CC01 CC31 DD02 EE01 FF18 HH25 HH26

Claims (10)

[Claims] 1. A glass substrate having an inner wall inclined in a plate thickness direction and having a plurality of through holes in which the inclination of the inner wall changes in two steps. 2. The glass substrate according to claim 1, wherein each of the plurality of through holes is from the first main surface of the glass substrate to an intermediate position in a plate thickness direction, and from the first main surface to the intermediate position. A first inner wall sloping in a direction in which the diameter decreases toward the first inner wall, and connected to the first inner wall, from a middle position in the plate thickness direction to a second main surface of the glass substrate, from the middle position to the second main surface. 2. A glass substrate having a second inner wall inclined in a direction in which the diameter decreases toward the main surface of 2. 3. The glass substrate according to claim 2, wherein the first inner wall and the second inner wall are concave with respect to a central axis of the through hole in a cross section in the plate thickness direction. Characteristic glass substrate. 4. The glass substrate according to claim 2, wherein the first inner wall has a linear shape in a cross section in the plate thickness direction, and the second inner wall has a linear shape in a cross section in the plate thickness direction. A glass substrate having a concave shape with respect to the central axis of the through hole. 5. The glass substrate according to claim 2, wherein the first inner wall and the second inner wall are linear in a cross section in the plate thickness direction. 6. A sand blasting method is used in which an opening is formed in a mask material attached to the surface of a glass substrate, and the glass substrate is crushed and removed while irradiating the glass substrate with an abrasive particle jet through the opening. A through hole is formed in the glass substrate by using a photosensitive dry film resist having an opening formed by exposure and development as the mask material, and using the abrasive particle jet having a divergence angle of less than 5 degrees in total angle. A method of manufacturing a glass substrate, comprising: 7. The glass substrate manufacturing method according to claim 6, wherein the abrasive particle jet can be set by combining a particle diameter of the abrasive, a flow rate and a flow rate. Manufacturing method. 8. A wiring board having a glass substrate and a wiring layer formed on the glass substrate, the wiring layer including a conductor layer and an insulating layer, wherein the electrical component is mounted on the glass substrate via the wiring layer. The wiring board is characterized in that the glass substrate has a plurality of through holes whose inner wall is inclined in the plate thickness direction and the inclination of the inner wall is changed in two steps. 9. The wiring board according to claim 8, wherein each of the plurality of through holes of the glass substrate is filled with a conductor paste and fired. 10. A semiconductor module comprising a glass substrate, a wiring substrate formed of a wiring layer formed on the glass substrate, and an electrical component mounted on the wiring substrate, wherein the glass substrate has a thickness direction. A semiconductor module having a plurality of through holes in which an inner wall is inclined and the inclination of the inner wall is changed in two steps.