JP2003194697A - Explorer having grating coupler and its manufacturing method, probe having explorer, information processing device having probe, surface observation device, exposure device, and optical element by exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an explorer and its manufacturing method capable of manufacturing easily, and possible to be designed allowing an error of precision required in a manufacturing process, when manufacturing a grating having desired performance adaptive to the explorer shape on a waveguide layer on an explorer lower part, and also to provide a probe having the explorer, an information processing device having the probe, a surface observation device, an exposure device, and an optical element by the exposure device. <P>SOLUTION: This explorer equipped with a member having a pyramidal optical through-hole formed thereon and the waveguide layer positioned under the member has a constitution wherein the grating formed on the surface of the waveguide layer positioned under the member has a grating pattern determined from an interference pattern between a spherical wave in the explorer and a plane wave in the waveguide layer. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe having a grating coupler, a method of manufacturing the probe, a probe having the probe, an information processing apparatus having the probe, a surface observation apparatus, an exposure apparatus, and an optical system using the exposure apparatus. Regarding the device. In particular, the probe here has a minute aperture and has a configuration suitable for near-field light detection or illumination.

[0002]

2. Description of the Related Art Recently, a scanning tunneling microscope (hereinafter referred to as "STM") has been developed which allows direct observation of the electronic structure of surface atoms of a conductor (G. Binnig et al.
Phys. Rev. Lett. , 49, 57 (198
3)) Scanning probe microscopes (hereinafter referred to as "SPM") have been popular in the field of material microstructure evaluation since it has become possible to measure real space images with high resolution regardless of whether they are single crystals or amorphous. Has come to be studied. As the SPM, a scanning tunneling microscope that detects a surface structure using tunnel current, atomic force, magnetic force, light, etc. obtained by bringing a probe having a microprobe (probe) close to a sample to be evaluated. (STM), atomic force microscope (AF
M), magnetic force microscope (MFM), near-field optical microscope (S
NOM) etc.

Among these SPMs, the SNOM has a positional resolution of λ / 2 or less, which is impossible with a conventional optical microscope, and uses the near-field light generated from a minute aperture to form a fine pattern on the sample surface. It is a non-destructive measurement of shapes and the like with high resolution. Further, in SNOM, it is possible to use materials such as ecology and cells, which have been difficult to observe in the past, as a sample, there are many observable objects, and its application range is wide.

[0004]

By the way, when near-field light is generated by using the above-mentioned minute aperture, it is disclosed in JP-A-06-06
As is clear from the description in Japanese Patent No. 259821,
In order to improve the generation efficiency, there is a method of providing a grating on the surface of the waveguide layer below the probe. However, it is necessary to design a grating pattern according to the shape of the probe each time, which causes a problem of low work efficiency. Further, when the probe manufacturing process includes a process of crimping the probe, since there is a limit to the positional accuracy at the time of crimping, it was necessary to design to allow this error.

Therefore, the present invention solves the above-mentioned problems, and when manufacturing a grating having a desired performance adapted to the shape of the probe in the waveguide layer below the probe, the manufacturing is easy and the manufacturing process is Probe capable of allowing an accuracy error required for a probe, a method of manufacturing the probe, a probe having the probe, an information processing device having the probe, a surface observation device, an exposure device, and an optical device using the exposure device. The purpose is to provide a device.

[0006]

In order to achieve the above object, the present invention provides a gas processing apparatus and a gas processing method configured as in the following (1) to (33). (1) In a probe provided with a member having a conical optical through hole and a waveguide layer located below the member, the probe is formed on the surface of the waveguide layer located below the member. A probe having a grating pattern obtained from an interference pattern of a spherical wave in the probe and a plane wave in the waveguide layer. (2) The probe according to (1) above, wherein the grating pattern satisfies the following conditional expression. here, m: integer. α: Maximum length of grating. θ1: is the converging angle of the light guided from the grating. Here, α is the maximum length of the two-dimensional figure that is the bottom surface inside the through hole, and θ1 is the angle of the inside surface of the through hole. The x axis is in the waveguide direction of the plane wave in the waveguide layer, and x is in the waveguide layer.
Take the y-axis perpendicular to the axis. The z axis is taken perpendicular to the x and y axes.
The foot of the perpendicular drawn from the focal point of the grating to the xy plane is taken as the origin of the coordinate axes. λ: wavelength of incident light. n ₁ : Refractive index of the waveguide layer. n ₂ : Refractive index inside the through hole. (3) The probe according to (1) or (2), wherein the through-hole has a substantially quadrangular pyramid shape. (4) The probe according to (3) above, wherein the substantially quadrangular pyramid through hole is a through hole formed by Si crystal axis anisotropic etching. (5) The probe according to (1) or (2), wherein the through hole has a substantially triangular pyramid shape. (6) The through holes of the substantially triangular pyramid are made of Si, GaAls, Ga
The probe according to (5) above, wherein P is a through hole formed by etching. (7) The probe according to (1) or (2), wherein the through hole has a substantially conical shape. (8) The probe according to (7), wherein the substantially conical through hole is a through hole formed by etching Si. (9) In the grating, the angle between the hypotenuse of the inner surface of the through hole and the perpendicular line from the probe apex to the bottom surface of the through hole is θ.
2. When the maximum length of the bottom surface of the through hole is β and the lateral position error of the probe crimping process in the two-dimensional shape grating having the maximum length α to be produced under the probe is Δ, the focus is The probe according to any one of (1) to (8) above, wherein α / (2tan θ ₁ ) representing a distance is set so as to satisfy the following condition. However, y ₁ is Let the simultaneous equations of y be significant among the solutions solved for y. (10) The grating has a maximum length that is smaller than a length between probe pedestal portions formed at a hem of the member and larger than a maximum length of a bottom surface of the through hole. The probe according to (9) above. (11) In the grating, the angle formed by the hypotenuse of the inner surface of the through hole and the perpendicular line from the probe apex to the bottom surface of the through hole is θ.
_{2. When} the maximum length of the bottom surface of the through hole is β, the maximum length α produced at the bottom of the probe and the focal length of the two-dimensional grating having the collection angle θ ₁ Any of the above (1) to (8), wherein α / (2tan θ ₁ ) representing the focal length is set so as to satisfy the following condition, where Δ is the position error. The described probe. However, Of the solutions obtained by solving the simultaneous equations of y with respect to y, the significant one is defined as y _1, and α / (2 tan θ that minimizes this y _1
Let the value of ₁ ) be Z ₁ . (12) The probe according to any one of the above (9) to (11), wherein the grating is composed of an aggregate of a plurality of gratings arranged. (13) The probe according to any one of the above (9) to (11), wherein the grating is configured by arranging a plurality of overlapping portions of the grating with a shift. (14) The probe according to any one of the above (1) to (13), wherein an inner surface of the through hole has a condensing effect by reflection. (15) In the method of manufacturing a probe, wherein a member having a conical optical through hole is transferred to a member provided below the member and provided with a waveguide layer to manufacture the probe, the waveguide is provided. When forming a grating on the surface of the layer, on the grating formation surface of the waveguide layer, an interference pattern formed by causing a spherical wave in the probe to interfere with a plane wave in the waveguide layer,
A method of manufacturing a probe, wherein the interference pattern is patterned as a grating pattern. (16) The method for manufacturing a probe as set forth in (15), wherein the grating pattern satisfies the following conditional expression. here, m: integer. α: Maximum length of grating. θ1: is the converging angle of the light guided from the grating. Here, α is the maximum length of the two-dimensional figure that is the bottom surface inside the through hole, and θ1 is the angle of the inside surface of the through hole. The x axis is in the waveguide direction of the plane wave in the waveguide layer, and x is in the waveguide layer.
Take the y-axis perpendicular to the axis. The z axis is taken perpendicular to the x and y axes.
The foot of the perpendicular drawn from the focal point of the grating to the xy plane is taken as the origin of the coordinate axes. λ: wavelength of incident light. n ₁ : Refractive index of the waveguide layer n ₂ : Refractive index inside the through hole. (17) The method for manufacturing a probe according to the above (15) or (16), characterized in that the through hole is formed into a substantially quadrangular pyramid. (18) The through hole of the substantially quadrangular pyramid is formed by Si crystal axis anisotropic etching.
The method for manufacturing a probe according to 7). (19) The method for manufacturing a probe according to the above (15) or (16), wherein the through hole is formed in a substantially triangular pyramid. (20) The substantially triangular pyramid through-hole is made of Si, GaA, G
The method for manufacturing a probe according to (19) above, wherein the aP is formed by etching. (21) The method for manufacturing a probe according to the above (15) or (16), wherein the through hole is formed in a substantially conical shape. (22) The method for manufacturing a probe according to the above (21), wherein the substantially conical through hole is formed by etching Si. (23) In the grating, the angle between the hypotenuse of the inner surface of the through hole and the perpendicular line from the probe apex to the bottom surface of the through hole is θ.
2. When the maximum length of the bottom surface of the through hole is β and the lateral position error of the probe crimping process in the two-dimensional shape grating having the maximum length α to be produced under the probe is Δ, the focus is The method for manufacturing a probe according to any one of (15) to (22) above, wherein α / (2tan θ ₁ ) representing a distance is set so as to satisfy the following condition. However, y ₁ is Let the simultaneous equations of y be significant among the solutions solved for y. (24) The grating is formed such that the maximum length thereof is smaller than the length between the probe pedestal portions formed at the hem of the member and larger than the maximum length of the bottom surface of the through hole. The method for manufacturing a probe according to (23) above. (25) In the grating, the angle formed by the hypotenuse of the inner surface of the through hole and the perpendicular line from the probe apex to the bottom surface of the through hole is θ.
_{2. When} the maximum length of the bottom surface of the through hole is β, the maximum length α produced at the bottom of the probe and the focal length of the two-dimensional grating having the collection angle θ ₁ When the position error is Δ, α / (2 tan θ ₁ ) representing the focal length is set so as to satisfy the following condition. (15) to (22) above Method of manufacturing probe. However, Of the solutions obtained by solving the simultaneous equations of y with respect to y, the significant one is defined as y _1, and α / (2 tan θ that minimizes this y _1
Let the value of ₁ ) be Z ₁ . (26) The method for manufacturing a probe according to any one of the above (23) to (25), characterized in that the grating is formed by an aggregate in which a plurality of gratings are arranged. (27) The method for manufacturing a probe according to any one of (23) to (25), wherein the grating is formed by arranging a plurality of overlapping portions of the grating so as to be offset from each other. (28) The through hole is formed so that the inner surface thereof has a condensing function by reflection.
5) The method for manufacturing a probe according to any one of (27). (29) The present invention is characterized by having the probe according to any one of (1) to (14) above or the probe manufactured by the method for manufacturing a probe according to any one of (15) to (28) above. probe. (30) An information processing device comprising the probe according to (29) above. (31) A surface observation apparatus having the probe according to (29) above. (32) An exposure apparatus comprising the probe according to (29) above. (33) An optical element produced using the exposure apparatus according to (32) above.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION By applying the above configuration,
When the shape of the probe is known, or when the desired condensing characteristics are determined, it is possible to easily obtain the grating pattern, and it is not necessary to design according to the shape of the probe one by one. The efficiency can be greatly improved. In addition, this makes it possible to form a grating that can tolerate errors in the vertical and horizontal crimping position accuracy during crimping in the probe crimping process during the probe manufacturing process, greatly improving production efficiency and improving yield. can do. Further, it becomes possible to allow an accuracy error required in the probe manufacturing process. In addition, a probe for detecting or irradiating near-field light including a structure having such a grating pattern, a probe having the probe, an information processing device having the probe, a surface observation device, an exposure device, and the exposure device Optical elements and the like can be realized.

An embodiment of the present invention will be described below with reference to FIGS. 2, 3 and 4. The method for producing the probe of the present invention will be described. First, the substrate 1 is prepared as the first substrate. The substrate 1 is preferably made of Si, GaAls, GaP or the like, but is not limited thereto. A conical recess 2 is formed in this substrate 1 (FIG. 2A). As this method, for example, S
For i and the like, there is a method such as crystal axis anisotropic etching, but the method is not limited to this. Next, a silicon dioxide film 3 is formed on the substrate 1.
Then, the light-shielding substance is formed into a film to form the light-shielding layer 4 (FIG. 2B). The light-shielding substance is preferably Au or Pt, but is not limited thereto. Further, this light shielding layer is patterned by using a method such as photolithography. As a result, the probe 5 is manufactured on the substrate 1 (FIG. 2C).

On the other hand, as the second substrate, the probe is rotated.
Silicon nitride film on the surface as the transferred material to be copied
A substrate 7 having a film 6 formed thereon is prepared (see FIG. 3).
(A)). This substrate is preferably Si, GaAls, GaP, etc.
This is not the case, though. Form a light-shielding material on the substrate 7
To form the light shielding layer 8. Examples of light-shielding substances include Au and Pt
Preferred, but not limited to this. Next, the waveguide layer 9 is formed.
It SiO for the waveguide layer 9 ₂And SU₈Transparent resin such as
Etc. are preferable but not limited to this. Furthermore, this waveguide
The layer 9 is patterned using a technique such as photolithography.
To run.

Next, a light shielding material is formed into a film to form a light shielding layer 10. The light-shielding substance is preferably Au or Pt, but is not limited thereto. Further, the light shielding layer 10 is patterned by using a method such as photolithography. At this time, only the portion of the surface of the waveguide layer to which the probe 5 of the substrate 1 is transferred is opened to expose the opening 11 in the light shielding layer (FIG. 3).
(B)). Then, the grating 12 is engraved on the exposed surface of the waveguide layer (FIG. 3C). The method is FIB
, EB, fiber probe exposure, etc., but not limited to this.

Next, the probe formed on the substrate 1 which is the first substrate is transferred onto the opening portion of the substrate 7 which is the second substrate by pressure bonding and peeling (see FIG. 4 ( a)).
For the transfer, an alignment device capable of holding each substrate by a vacuum chuck or the like is used.
This is performed by aligning the opening portion of the light-shielding layer formed on the surface of the waveguide layer with the opening portion, contacting the opening portion, and further applying a load. Next, a minute opening is formed at the tip of the probe by using a method such as dry etching, but the forming method is not limited to this (FIG. 4B). Then, lever treatment was applied (Fig. 4).
(C)).

In this way, the tip has a minute opening,
A probe having a grating on the surface of the waveguide layer under the probe was prepared. Here, the grating and pressure bonding operations described in the above manufacturing process will be described. The grating pattern had to be designed each time according to the probe shape. However, here, when it is desired to manufacture a grating suitable for the maximum length of the bottom part inside the probe and the angle of the inner surface of the probe, the grating pattern is obtained from the following formula from the shape of the grating and the desired focusing angle.

The basic idea of obtaining the grating pattern is to cause a spherical wave in the probe and a plane wave in the waveguide layer to interfere with each other and project the interference pattern onto the grating production surface.

Here, when the x, y, and z axes are set as shown in FIG. 1, the formula of the spherical wave in the probe can be expressed as follows. Also, the equation for the plane wave in the waveguide layer is Can be expressed as However, r is the distance from the focusing position (0, 0, Z ₀ ) of the grating. These interference patterns are It is obtained more, and these are solved to obtain the following equation. here Is. Further, m is an integer, and n ₁ and n ₂ are refractive indexes inside the waveguide layer and the through hole, respectively.

Here, when the shape of the space inside the probe is determined, the spatial position where the focal point of the grating should come and the property to have will be considered. The grating is obtained as an interference pattern of a spherical wave in the probe and a plane wave in the waveguide layer, which becomes a hyperbola. At this time, the center of the spherical wave described above becomes the focal position of this grating. At this time, the size of the focused spot at the focus position has a finite value due to the diffraction limit, and its size is determined by the nature of the Gaussian beam. It is a degree. NA represents the numerical aperture of the Gaussian beam. However, due to the effect of the inner surface reflection on the inner surface of the through hole, it is possible to form a spot in which the electric field strength is increased in a region near the minute aperture and narrower than the beam diameter. This is different from the focus, but since the intensity of this spot also affects the intensity of the near-field light that is generated, it is desirable to utilize the condensing effect by reflection on the inner surface of this through hole.

It is also necessary to examine the accuracy in the crimping process. The alignment in the lateral direction in the probe crimping process is performed using an alignment device, but if the alignment accuracy is Δ and the beam diameter at the focus position is narrowed to less than Δ, the vicinity of the minute aperture at the apex of the probe There is a possibility that the efficiency of generating near-field light at the point of time may decrease. Therefore, in order to keep the light reduction due to the lateral position error in the crimping process to 50% or less, the beam diameter of the light guided from the grating is set to Δ when the beam hits the inner surface of the through hole inside the through hole. ~ √2 ×
Spread to Δ. As a result, the requirement for crimping accuracy is reduced, and production efficiency, production speed, and yield are improved. Therefore, it is necessary to correct the light collecting angle of the grating with respect to the angle of the hypotenuse of the inner surface of the through hole.

At this time, the grating having the optimum performance
As shown in FIG. 12, the oblique side of the inner surface of the through hole
Angle between the probe apex and the vertical line on the bottom of the through hole
Θ ₂, The maximum length of the bottom of the through hole is β,
Two-dimensional shape grating having maximum length α to be manufactured
The error in the lateral position of the probe crimping process in
Then, α / (2tan θ representing the focal length₁)
Must be set to satisfy the
It That is, However Significant solution solved for simultaneous equation y
When y1 Such that α / (2 tan θ₁) Should be set.

At this time, the grating is a two-dimensional figure and its maximum length is α. The two-dimensional figure refers to a figure having an area among figures produced on a plane such as a circle, an ellipse, and a polygon, and the maximum length is as shown in FIG. Further, as a measure for reducing the amount of light with respect to the lateral position error in the crimping process, in addition to manipulating the focusing angle of the above-mentioned grating, the maximum length of the grating to be manufactured is larger than the maximum length of the bottom surface of the through hole and crimped. It is effective to make it smaller than the hem of the probe (FIG. 6).

The positional accuracy in the vertical direction will be examined. It is very difficult to keep the crimping force in the crimping process strictly constant, and therefore, there is some variation in the depth at which the probe sinks into the waveguide layer during crimping. As a result, the distance from the grating surface to the probe apex also varies. Therefore, since the positional relationship between the focus formed by the grating and the probe apex differs for each probe, the intensity of near-field light generated in the minute aperture near the probe apex cannot be kept constant for each probe.

However, when the focusing angle of the grating is set as described below, the influence of the vertical position accuracy at the time of crimping on the near-field light intensity generated from the minute aperture near the apex of the probe becomes very small. . This corresponds to setting a region in which the maximum length of the cross-sectional shape inside the probe perpendicular to the light traveling direction near the apex of the probe is smaller than the beam diameter. Therefore, a vertical error of about the size of this region can be allowed. The converging angle θ ₁ of such a grating can be expressed by the following equation. However Simultaneous equations represented as the y ₁ things significant among the solutions solving for y, the value of such theta ₁ as the y ₁ is minimized and gamma. The first formula is a formula for describing the inner surface of the probe, and the second formula is a formula for the beam diameter of the Gaussian beam. In these equations, the y-axis is taken as the light propagation direction in the probe, and the x-axis is defined perpendicularly to this. At this time, It is expressed as an angle that satisfies

Further, the lateral displacement as described above,
As a method of creating a grating that allows positional displacement in the vertical direction, a method of manufacturing the grating as a set of small gratings (FIG. 7A) or a method of describing as a superposition of a plurality of gratings (FIG.
(B)) etc. These methods have the effect of artificially increasing the beam diameter by varying the converging angles and focal positions of a plurality of gratings and the effect of extending the beam waist in the traveling direction of light (FIG. 7C). It is possible to suppress a decrease in the amount of near-field light generated by disposing the focal points of a plurality of gratings near the probe apex.

[0022]

EXAMPLES Examples of the present invention will be described below. [Example 1] In Example 1 of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and a member provided inside the support were provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer and a grating formed on a surface of the waveguide layer below the member. As shown in FIG. 8, for example, the probe manufactured according to the present embodiment introduces light directly from the end face of the waveguide layer having the probe or through an optical element such as a fiber, and the near field emitted from the minute aperture. It is used to expose a fine pattern by bringing the photoresist close to a distance covered by light.

FIG. 9 is a cross-sectional view showing a manufacturing process of the probe for irradiating a minute light according to this embodiment, and the manufacturing method will be described below by using this. It is assumed that the lateral position error in the crimping process of the alignment apparatus used in this embodiment is smaller than the minimum beam diameter that can be formed in the probe.

First, the plane orientation (10
0) single crystal silicon wafer was prepared, and a silicon thermal oxide film was formed to 100 nm as the protective layer 14 (FIG. 9).
(A)). Next, a desired portion of the protective layer 14 is patterned by photolithography and etching with an aqueous solution of hydrogen fluoride and ammonium fluoride, and one side is 10
The square silicon of μm was exposed.

Next, the crystallographic axis anisotropic etching using an aqueous solution of potassium hydroxide was used to etch the silicon in the patterning portion using an aqueous solution of potassium hydroxide having a concentration of 30% and a liquid temperature of 90 ° C. By this step, an inverted pyramidal recess 15 having a depth of about 7 μm and surrounded by four planes equivalent to the (111) plane was formed (see FIG. 9B)). On this occasion,
The angle formed by each of the four surfaces of the recess 15 and the surface of the first substrate 13 was determined by the crystal orientation and was about 55 °.

Next, the protective layer 14 was removed with an aqueous solution of hydrogen fluoride and ammonium fluoride, and then thermally oxidized at 1000 ° C. using a mixed gas of hydrogen and oxygen to deposit 400 nm of silicon dioxide as a peeling layer 16. . By this method, the concave portion 15 was sharpened in the tip region, and the angle formed by the inner wall of the tip portion and the surface of the first substrate 13 was approximately 75 ° (FIG. 9C). Next, gold Au and platinum Pt were simultaneously deposited on the first substrate 13 by a vacuum vapor deposition method to have a thickness of 100 nm. Furthermore, platinum Pt was deposited to 50 nm by a vacuum evaporation method. Finally, gold Au was deposited by a 300 nm vacuum evaporation method. These three layers were used as the light shielding layer 17 (FIG. 9D). Next, the light shielding layer 17 was patterned by photolithography and etching (FIG. 9).
(E)).

Next, as the second substrate 18, the plane orientation (10
The single crystal silicon wafer of 0) was prepared, and silicon nitride was deposited to a thickness of 250 nm as the mask layer 19 on both surfaces of the second substrate 18 (FIG. 10A). Next, the V-groove 20 was formed in the mask layer 19 on the surface by photolithography and etching (FIG. 10B). Next, titanium T is deposited by vacuum deposition.
i was deposited to a thickness of 5 nm. Further, gold Au was deposited to 100 nm by a vacuum evaporation method. Lastly, platinum Pt was formed by vacuum deposition.
Of 50 nm was deposited. These three layers are collectively referred to as a light shielding layer (A) 21.

Next, SU8 was applied and patterned as the waveguide layer 22 (FIG. 10C). Next, 50 nm of platinum Pt was deposited by the vacuum evaporation method. Further, gold Au was deposited to 100 nm by a vacuum evaporation method. These two layers were used as a light shielding layer (B) 23. Next, the light shielding layer (A) 21 and the light shielding layer (B) 23 were patterned by photolithography and etching. Further, a 10 μm square grating was patterned in the opening 24 where the waveguide layer was exposed by patterning with an electron beam processing apparatus (FIG. 10).
(D)).

Further, the grating pattern formed on the surface of the waveguide layer is obtained by the following equation. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, The simultaneous equations of were calculated and used as the value when the significant solution takes the minimum value.

The light-shielding layer 17 formed on the processed first substrate 13 and the light-shielding layer (B) 23 of the second substrate 18 are formed.
Was pressure-bonded so that the center of the recess 15 of the first substrate 13 and the center of the opening 24 patterned on the light-shielding layer (B) 23 of the second substrate 18 were coaxial with each other (see FIG. 11A). ). The probe portion formed of the light shielding layer 17 formed on the first substrate 13 by pressure bonding was transferred onto the light shielding layer (B) 23 on the second substrate 18 (FIG. 11B).

Next, TEOS (Tetraethyl)
rthosilicate) and TMP (Trimeth)
Chemi using ylphosphonate) and ozone
cal vapor deposition (CVD)
Method, at the formation temperature of 350 ° C., phosphorus glass (PSG: Phospho-Silica) is formed on the surface of the second substrate 18.
te glass) to a film thickness of 100 nm and a film thickness adjusting layer 25
(FIG. 11C).

Next, a minute opening 26 is formed at the top of the light shielding layer 17.
The film thickness adjusting layer 25, the light-shielding layer (A) 21 and the light-shielding layer (B) 23 were etched by dry etching with argon so that the film was formed (FIG. 11D). After that, after forming a protective layer such as PIQ on the surface of the second substrate 18 on the waveguide layer side, anisotropically etching the second substrate 18 and then removing the protective layer to complete the lever treatment. Then, a probe having a minute opening at the tip was manufactured (Fig. 11).
(E)). In use, light propagated through the waveguide layer in the second substrate, and when it reached the lower part of the probe, it was guided into the probe by the grating on the surface of the waveguide layer.

By the process shown in this example, a probe having a high near-field light generation efficiency could be manufactured using Si, which is an easy-to-process, inexpensive, and safe material. Also,
A high-resolution SNOM image could be obtained in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to this example. Further, it was possible to realize an information processing device (FIG. 20) capable of reducing the recording pit diameter at the time of recording, and it was confirmed that the recording pit was recorded with a diameter of 100 nm. It was also confirmed that the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 2] FIGS. 13 and 14 are cross-sectional views showing the steps of a method of producing a probe having through holes of substantially triangular pyramid shape in Embodiment 2 of the present invention, and FIG. 15 is produced. It is a perspective view of a triangular pyramid-shaped probe. The micro probe has a triangular pyramid shape surrounded by three faces as shown in FIG.

Hereinafter, the manufacturing method of this embodiment will be described with reference to FIGS.
4 and FIG. In FIGS. 13 and 14, the silicon nitride film serving as the mask layer is formed by low pressure CVD (Lo
wPressure Chemical Vapor
The first substrate 28 is a silicon wafer whose crystal orientation plane is (100) and which is formed by 0.1
Prepare as. Using the photoresist formed by the photolithography process as a mask, a desired portion of the silicon nitride film was etched by reactive ion etching using CF _4, to form a square mask layer 27. Using the photoresist as a mask, the first substrate is C
Vertical anisotropic etching was performed by reactive ion etching using a mixed gas of F ₄ and O ₂ to form a square step shown in FIG. The height of this step is about 8.7 μm
Met.

After that, the photoresist is removed, and the protective layer 29 is formed by thermal oxidation with an oxidizing gas (FIG. 13).
(C)). The top view is shown in FIG. FIG.
(B) to (d) are sectional views taken along the line A-A in the above-mentioned top view. Next, after removing the mask layer 27 by reactive etching with CF ₄ , the first substrate 28 is subjected to crystal axis anisotropic etching at a liquid temperature of 80 ° C. with a 27% aqueous potassium hydroxide (KOH) solution. 13 (d) shows (1
The convex portion 30 having the slope 11) was formed.

Next, after the protective layer 29 is removed by etching with an HF aqueous solution, the first substrate 2 having the protrusions 30 formed thereon is formed.
8 was thermally oxidized with an oxidizing gas to form a peeling layer 31 made of silicon dioxide (FIG. 14 (e)). Next, a thin film of 1000 Å of Cr is deposited on the peeling layer 31 of the first substrate 28 having the protrusions 30 by a vacuum vapor deposition method, the first substrate is immersed in a copper sulfate bath which is a plating bath, and Cr is deposited by the plating method. A Cu film having a thickness of 200 μm was formed thereon to form a support layer 32 (FIG. 14).
(F)).

The temperature of the copper sulfate bath is 30 ° C. and the current density is 5A /
It was set to cm ² . Next, the first substrate 28 is etched with a potassium hydroxide (KOH) aqueous solution having a concentration of 27% at a liquid temperature of 90 ° C. to form a female substrate for a microprobe including a supporting layer 32 having a recess 33 and a peeling layer 31. Formed (FIG. 14 (g)).
After that, Pt, which is a material for the microprobe, is deposited by vacuum deposition to 3
A 000Å film was formed, and a pattern was formed by photolithography and etching to form a probe material layer 34 (FIG. 14 (h)).

The subsequent steps are similar to those of the first embodiment shown in FIG. Further, the grating pattern formed on the surface of the waveguide layer is obtained by the following formula. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, The simultaneous equations of were calculated and used as the value when the significant solution takes the minimum value.

By the process shown in this example, a probe having a high near-field light generation efficiency could be manufactured by using Si, which is an easy-to-process, inexpensive, and safe material. By this process, a probe having a substantially triangular pyramid probe could be manufactured (FIG. 15). With this shape, there is no probe in which the apex of the tip of the probe has two vertices instead of one, and the yield of production of a probe with a good shape is improved.

Further, in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to this embodiment,
A high-resolution SNOM image could be obtained. Further, it was possible to realize an information processing device (FIG. 20) capable of reducing the recording pit diameter at the time of recording, and it was confirmed that the recording pit was recorded with a diameter of 100 nm.
Further, the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present embodiment has a wavelength of 100 nm.
It was confirmed that the grating was manufactured with the following grating pitch.

[Third Embodiment] FIG. 21 shows a third embodiment of the present invention.
FIG. 6 is a cross-sectional view of a step of the method for manufacturing the probe having the substantially triangular pyramid-shaped through hole in FIG. In FIG. 21, first, a GaAs substrate having a (111) B-plane crystal orientation surface on which silicon dioxide is sputtered as a protective layer 2002 is prepared as a first substrate 2001 (FIG. 21A). Using the photoresist formed by the photolithography process as a mask, the desired portion of the silicon dioxide film is exposed to H
Etching was performed with an aqueous solution of F to expose GaAs in the shape of a regular triangle with one side of 10 μm.

Next, anisotropic etching was performed using a Br ₂ ethanol solution or the like to form an inverted triangular pyramidal recess 2003 surrounded by three equivalent (111) A planes (FIG. 21).
(B)). FIG. 21F is a top view of the case where an inverted triangular pyramidal recess is formed on the first substrate 2001. At this time, the angle formed by the three surfaces of the recess 2003 and the surface of the first substrate 2001 was determined by the crystal orientation and was about 70 °.

Next, after removing the protective layer 2002 with an aqueous solution of hydrogen fluoride and ammonium fluoride, the peeling layer 20 is removed.
As 04, 400 nm of Cr was sputtered, and the surface thereof was exposed to the atmosphere to be oxidized (FIG. 21 (c)). Release layer 200
Other than this, silicon dioxide is also preferable as 4, but a peeling layer may not be provided.

Next, gold Au and platinum Pt are simultaneously deposited on the first substrate 2001 by a vacuum vapor deposition method to have a thickness of 10
It was set to 0 nm. Furthermore, platinum Pt is added by vacuum deposition to 50
nm deposited. Finally, gold Au was deposited to a thickness of 300 nm. These three layers were used as a light shielding layer 2005 (FIG. 21 (d)). Then, the light shielding layer 2005 was patterned by photolithography and etching (FIG. 21E).

The subsequent steps are similar to those of FIG. 10 of the first embodiment. The grating pattern formed in this embodiment will be described below. Further, the grating pattern formed on the surface of the waveguide layer is obtained by the following formula. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, The simultaneous equations of were calculated and used as the value when the significant solution takes the minimum value.

By the process shown in this embodiment, GaAs
It was possible to fabricate a probe with high near-field light generation efficiency using an inexpensive material that is easy to process. By this process, a probe having a probe having a substantially regular triangular pyramid could be manufactured. Due to the symmetrical shape with respect to the optical axis of the light traveling inside the probe, there is no probe in which the tip of the probe has two vertices instead of one point, and the yield of the production of a probe with a good shape is reduced. Improved. Furthermore, the spatial profile of the near-field light generated because the mode of the light guided in the probe is adjusted also becomes smaller. Further, a high-resolution SNOM image could be obtained in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to this example. Further, it was possible to realize an information processing device (FIG. 20) capable of reducing the recording pit diameter at the time of recording, and it was confirmed that the recording pit was recorded with a diameter of 100 nm. Further, the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present embodiment is 100
It was confirmed that the grating pitch was less than nm.

[Fourth Embodiment] FIG. 16 shows a fourth embodiment of the present invention.
FIG. 6 is a cross-sectional view of a step of the method for manufacturing the probe having the substantially conical through hole in FIG. In FIG. 16, first, a silicon wafer having a crystal orientation plane (100) on which a silicon dioxide film formed by thermal oxidation with an oxidizing gas is formed is a first substrate 3
Prepare as 5. Using the photoresist formed by the photolithography process as a mask, a desired portion of the silicon dioxide film is etched with an HF aqueous solution,
Mask layer 36 made of a silicon oxide film and having a diameter of 10 μmφ
Was formed (FIG. 16 (a)).

Next, the first substrate 35 is isotropically etched by plasma etching using SF ₆ / C ₂ ClF _{5 so} that the silicon under the mask layer 36 has an apex until it has an apex. The mask layer 36 was removed to form the convex portion 37 of FIG. The protrusion had a substantially conical shape and had a height of 8.7 μm.

Next, a thin film of Cr1000Å is deposited on the surface of the first substrate 35 having the convex portions 37 by a vacuum evaporation method to form a peeling layer 38 (FIG. 16C), and then the first substrate 35.
Was soaked in a copper sulfate bath which was a plating bath, and 200 μm of copper was formed on the peeling layer by the electroplating method as a cathode side to form a support layer 39 (FIG. 16D).

The temperature of the copper sulfate bath is 30 ° C. and the current density is 5A /
It was set to cm ² . Next, the first substrate 35 is removed by etching with an aqueous solution of potassium hydroxide (KOH) having a concentration of 27% at a liquid temperature of 90 ° C. to form a female substrate for a microprobe including a supporting layer having a recess 40 and a peeling layer. Then, after that, Au as a fine probe material was formed into a film of 3000 Å by a vacuum evaporation method, and a pattern was formed by photolithography and etching to form a probe material layer 41 (FIG. 16E).

The subsequent steps are similar to the steps of FIG. 11 onward of the first embodiment. Further, the grating pattern formed on the surface of the waveguide layer is obtained by the following formula. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, The simultaneous equations of were calculated and used as the value when the significant solution takes the minimum value.

By the process shown in this example, a probe having a high near-field light generation efficiency could be manufactured using Si, which is an easy-to-process, inexpensive, and safe material. By this process, it was possible to fabricate a probe having a substantially conical probe. With this shape, it was possible to fabricate a probe having a condensing performance independent of the polarization direction of light inside the probe and a near-field light generation efficiency.

Further, in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to this embodiment,
A high-resolution SNOM image could be obtained. Further, it was possible to realize an information processing device (FIG. 20) capable of reducing the recording pit diameter at the time of recording, and it was confirmed that the recording pit was recorded with a diameter of 100 nm.
Further, the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present embodiment has a wavelength of 100 nm.
It was confirmed that the grating was manufactured with the following grating pitch.

[Embodiment 5] In an embodiment 5 of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and an inside of the support are provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer provided and a grating formed on a surface of the waveguide layer located below the member. The probe manufactured according to the present embodiment is, for example, as shown in FIG.
Exposure of a fine pattern is performed by introducing light directly from the end face of the waveguide layer having a probe or through an optical element such as a fiber and bringing the photoresist close to a distance covered by the near-field light emitted from the minute aperture. Used for.

FIG. 9 is a cross-sectional view showing a manufacturing process of the probe for irradiating a minute light according to this embodiment, and the manufacturing method will be described below by using this. The lateral position error in the crimping process of the alignment device used in this embodiment is larger than the minimum beam diameter that can be formed in the probe.

The manufacturing process basically complies with the processes of FIG. 11 onward of the first embodiment. In the present embodiment, the production of a grating during the probe production process will be described. The alignment accuracy of the pressure bonding apparatus of this embodiment is 1 μm, and it is necessary to manufacture a grating that can tolerate this error during pressure bonding. At this time, the grating pattern is obtained by the following formula. . However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, When a significant one of the solutions solved for the simultaneous equation y Α / (2 tan θ ₁ ) was set so that The result of the calculation, Therefore, the value of this example was used.

By the process shown in this example, a probe having a high near-field light generation efficiency could be manufactured using Si, which is a material that is easy to process and is safe and inexpensive. Further, since the requirement for alignment accuracy by the alignment crimping device is relaxed, the time required for alignment is shortened and productivity is improved. Furthermore, it was possible to reduce the decrease in near-field light intensity due to the decrease in alignment accuracy. Also,
A high-resolution SNOM image could be obtained in the surface observation apparatus using the probe using the probe according to this example. It was also confirmed that the diffraction grating manufactured by the exposure apparatus equipped with the probe using the probe according to the present example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 6] In Embodiment 6 of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and the inside of the support are provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer provided and a grating formed on a surface of the waveguide layer located below the member. As shown in FIG. 8, for example, the probe manufactured according to the present embodiment has a proximity to which light is introduced directly from the end face of the waveguide layer having the probe or through an optical element such as a fiber and exits from a minute aperture. It is used to expose a fine pattern by bringing the photoresist close to the distance covered by the field light.

FIG. 9 is a cross-sectional view showing the manufacturing process of the probe for irradiating a minute light according to this embodiment, and the manufacturing method will be described below using this. The lateral position error in the crimping process of the alignment device used in this embodiment is larger than the minimum beam diameter that can be formed in the probe. In FIG. 9, first, a single crystal silicon wafer having a plane orientation (100) was prepared as the first substrate 13, and a silicon thermal oxide film was formed to 100 nm as the protective layer 14 (FIG. 9A). next,
A desired portion of the protective layer 14 was patterned by photolithography and etching with an aqueous solution of hydrogen fluoride and ammonium fluoride to expose square silicon having a side of 10 μm.

Next, the crystallographic axis anisotropic etching using a potassium hydroxide aqueous solution was used to etch the silicon in the patterning portion using a potassium hydroxide aqueous solution having a concentration of 30% and a liquid temperature of 90 ° C. By this step, an inverted pyramidal recess 15 having a depth of about 7 μm and surrounded by four planes equivalent to the (111) plane was formed (see FIG. 9B)). On this occasion,
The angle formed by each of the four surfaces of the recess 15 and the surface of the first substrate 13 was determined by the crystal orientation and was about 55 °.

Next, the protective layer 14 was removed with an aqueous solution of hydrogen fluoride and ammonium fluoride, and then thermally oxidized at 1000 ° C. using a mixed gas of hydrogen and oxygen to deposit 400 nm of silicon dioxide as the peeling layer 16. . By this method, the concave portion 15 was sharpened in the tip region, and the angle formed by the inner wall of the tip portion and the surface of the first substrate 13 was approximately 75 ° (FIG. 9C).

Next, gold Au and platinum Pt are formed on the first substrate 13.
Are simultaneously deposited by the vacuum evaporation method, and the thickness is 100
nm. Further, platinum Pt is deposited to 50n by a vacuum deposition method.
m deposited. Finally, gold Au was deposited by a 300 nm vacuum evaporation method. These three layers are used as the light shielding layer 17 (see FIG. 9).
(D)). Next, the light shielding layer 17 was patterned by photolithography and etching (FIG. 9E).

Next, as the second substrate 18, the plane orientation (100)
The single crystal silicon wafer of 1 was prepared, and silicon nitride was deposited to a thickness of 250 nm as the mask layer 19 on both surfaces of the second substrate 18 (FIG. 10A). Next, the V-groove 20 was formed in the mask layer 19 on the surface by photolithography and etching (FIG. 10B). Next, titanium Ti was deposited by vacuum deposition.
Was deposited to a thickness of 5 nm. Furthermore, 1% of gold Au is deposited by vacuum deposition method.
00 nm was deposited. Finally, platinum Pt was deposited to 50 nm by the vacuum evaporation method. A light-shielding layer (A) that combines these three layers
It was set to 21.

Next, SU8 was applied and patterned as the waveguide layer 22 (FIG. 10C), and then platinum Pt was deposited to 50 nm by the vacuum evaporation method. Further, gold Au was deposited to a thickness of 100 nm by a vacuum evaporation method. These two layers were used as a light shielding layer (B) 23. Next, the light shielding layer (A) 21 and the light shielding layer (B) 23 were patterned by photolithography and etching. Further, a 12 μm square grating was patterned by an electron beam processing apparatus in the opening 24 where the waveguide layer was exposed by patterning (FIG. 10).
(D)). At this time, the size of the opening 24 was also 12 μm square.

Since the alignment accuracy of the alignment pressure bonding apparatus is 1 μm, the grating pattern at this time is obtained by the following equation. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, When a significant one of the solutions solved for the simultaneous equation y Α / (2 tan θ ₁ ) was set so that The result of the calculation, Therefore, the value of this example was used.

Then, the light-shielding layer 17 formed on the processed first substrate 13 and the light-shielding layer (B) 23 of the second substrate 18 are formed.
Was crimped using an alignment crimping device so that the center of the recess 15 of the first substrate 13 and the center of the opening 24 patterned on the light-shielding layer (B) 23 of the second substrate 18 were coaxial ( See FIG. 11 (a). The probe portion formed of the light shielding layer 17 formed on the first substrate 13 by pressure bonding was transferred onto the light shielding layer (B) 23 on the second substrate 18 (FIG. 11B).

Next, TEOS (Tetraethyl)
rthosilicate) and TMP (Trimeth)
Chemi using ylphosphonate) and ozone
cal vapor deposition (CVD)
Method, at the formation temperature of 350 ° C., phosphorus glass (PSG: Phospho-Silica) is formed on the surface of the second substrate 18.
te glass) to a film thickness of 100 nm and a film thickness adjusting layer 25
(FIG. 11C). Next, the film thickness adjusting layer 25 and the light-shielding layer (A) 2 are dry-etched with argon so that the minute opening 26 is formed at the apex of the light-shielding layer 17.
1. The light shielding layer (B) 23 was etched (FIG. 11).
(D)).

After that, after forming a protective layer such as PIQ on the surface of the second substrate 18 on the side of the waveguide layer, the second substrate 18 is anisotropically etched and then the protective layer is removed to form a lever treatment. Was completed and a probe having a minute opening at the tip was manufactured (FIG. 11E). In use, light propagated through the waveguide layer in the second substrate, and when it reached the lower part of the probe, it was guided into the probe by the grating on the surface of the waveguide layer.

By the process shown in this embodiment, it was possible to manufacture a probe having a high near-field light generation efficiency by using a material called Si which is easy to process and is safe and inexpensive. Further, since the requirement for alignment accuracy by the alignment crimping device is relaxed, the time required for alignment is shortened and productivity is improved. Furthermore, it was possible to reduce the decrease in near-field light intensity due to the decrease in alignment accuracy.

Further, in the surface observation apparatus using the probe using the probe according to the present embodiment, the high resolution SNOM
I was able to get a statue. It was also confirmed that the diffraction grating manufactured by the exposure apparatus equipped with the probe using the probe according to this example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 7] In Embodiment 7 of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and the inside of the support are provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer provided and a grating formed on a surface of the waveguide layer located below the member. The probe manufactured according to the present embodiment is, for example, as shown in FIG.
Exposure of a fine pattern is performed by introducing light directly from the end face of the waveguide layer having a probe or through an optical element such as a fiber and bringing the photoresist close to a distance covered by the near-field light emitted from the minute aperture. Used for.

FIG. 9 is a cross-sectional view showing a manufacturing process of the probe for irradiating a minute light according to this embodiment, and the manufacturing method will be described below by using this. The manufacturing process is basically as shown in FIG.
This is based on the subsequent steps. In the present embodiment, the production of a grating during the probe production process will be described.

The crimping accuracy of the crimping device of this embodiment in the vertical direction is 50 nm, and it is necessary to fabricate a grating that can tolerate this error during crimping. At this time, the grating pattern is obtained by the following formula. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, When a significant one of the solutions solved for the simultaneous equation y Α / (2 tan θ ₁ ) was set so that This equation is designed to allow a vertical pressure bonding precision of 50 nm during the pressure bonding process.

By the process shown in this embodiment, it was possible to manufacture a probe having a high near-field light generation efficiency by using a material called Si which is easy to process and is safe and inexpensive. In addition, the design allows for an error in the vertical crimping accuracy in the crimping process, which improves the yield in the crimping process and improves the production efficiency. Further, in the surface observation apparatus using the probe using the probe according to the present embodiment, the high resolution SNO
An M image could be obtained. It was also confirmed that the diffraction grating manufactured by the exposure apparatus equipped with the probe using the probe according to this example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 8] In an eighth embodiment of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and an inside of the support are provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer provided and a grating formed on a surface of the waveguide layer located below the member. The probe manufactured according to the present embodiment is, for example, as shown in FIG.
Exposure of a fine pattern is performed by introducing light directly from the end face of the waveguide layer having a probe or through an optical element such as a fiber and bringing the photoresist close to a distance covered by the near-field light emitted from the minute aperture. Used for.

FIG. 9 is a sectional view showing a manufacturing process of the probe for irradiating a minute light according to the present embodiment, and the manufacturing method will be described below by using this. The lateral position error in the crimping process of the alignment apparatus used in this embodiment is larger than the minimum beam diameter that can be formed in the probe, and the vertical position accuracy is 100.
nm.

In FIG. 9, first, a single crystal silicon wafer having a plane orientation (100) was prepared as the first substrate 13, and a thermal silicon oxide film having a thickness of 100 nm was formed as the protective layer 14 (FIG. 9A). Next, a desired portion of the protective layer 14 was patterned by photolithography and etching with an aqueous solution of hydrogen fluoride and ammonium fluoride to expose square silicon having a side of 10 μm.

Next, the crystallographic axis anisotropic etching using an aqueous potassium hydroxide solution was used to etch the silicon in the patterning portion using an aqueous potassium hydroxide solution having a concentration of 30% and a liquid temperature of 90 ° C. By this step, an inverted pyramidal recess 15 having a depth of about 7 μm and surrounded by four planes equivalent to the (111) plane was formed (see FIG. 9B)). At this time, the angle formed by each of the four surfaces of the recess 15 and the surface of the first substrate 13 was determined by the crystal orientation and was about 55 °.

Next, the protective layer 14 was removed by an aqueous solution of hydrogen fluoride and ammonium fluoride, and then thermally oxidized at 1000 ° C. using a mixed gas of hydrogen and oxygen to deposit 400 nm of silicon dioxide as a peeling layer 16. . By this method, the concave portion 15 was sharpened in the tip region, and the angle formed by the inner wall of the tip portion and the surface of the first substrate 13 was approximately 75 ° (FIG. 9C). Next, gold Au and platinum Pt were simultaneously deposited on the first substrate 13 by a vacuum vapor deposition method to have a thickness of 100 nm. Further, platinum Pt was deposited to a thickness of 50 nm by a vacuum evaporation method. Finally, gold Au was deposited by a 300 nm vacuum evaporation method. These three layers were used as the light shielding layer 17 (FIG. 9D). Next, the light shielding layer 17 was patterned by photolithography and etching (FIG. 9).
(E)).

Next, as the second substrate 18, the plane orientation (100)
The single crystal silicon wafer of 1 was prepared, and silicon nitride was deposited to a thickness of 250 nm as the mask layer 19 on both surfaces of the second substrate 18 (FIG. 10A). Next, the V-groove 20 was formed in the mask layer 19 on the surface by photolithography and etching (FIG. 10B). Next, titanium Ti was deposited to a thickness of 5 nm by a vacuum evaporation method. In addition, 10 gold Au were deposited by vacuum deposition.
0 nm was deposited. Finally, platinum Pt was added to 5 by vacuum deposition.
0 nm was deposited. These 3 layers are put together and the light-shielding layer (A) 2
It was set to 1.

Next, SU8 was applied and patterned as the waveguide layer 22 (FIG. 10C). Next, 50 nm of platinum Pt was deposited by the vacuum evaporation method. Further, gold Au was deposited to 100 nm by a vacuum evaporation method. These two layers were used as a light shielding layer (B) 23. Next, the light shielding layer (A) 21 and the light shielding layer (B) 23 were patterned by photolithography and etching. Further, four 5 μm square gratings were patterned in an opening 24 of 10 μm square in which the waveguide layer was exposed by patterning as shown in FIG. 7A using an electron beam processing apparatus (FIG. 10D).

At this time, the grating pattern is obtained by the following equation. The alignment pressure bonding device has a lateral accuracy of 1 μm and a vertical accuracy of 100 nm. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, When a significant one of the solutions solved for the simultaneous equation y Α / (2 tan θ ₁ ) was set so that Calculation result Therefore, in this embodiment, α / of four gratings is
(2 tan θ ₁ ) has a grating a of 4.4 × 1
0 ^-6 , b was 4.4 x 10 ^-6 , c was 7.0 x 10 ^-6 , and d was 7.2 x 10 ^-6 . However, for the gratings a and b, the part of the grating pattern where y is positive, c
And d used the part where y was negative.

By the process shown in this embodiment, it was possible to manufacture a probe having a high near-field light generation efficiency by using a material called Si which is easy to process and is safe and inexpensive. Furthermore, by dividing the grating into a group of small gratings, it is possible to make the beam diameter near the beam waist large because the N Α of each grating can be made small, and the lateral direction in the crimping process can be increased. The tolerance for position accuracy has been greatly improved.

Further, by making the focal lengths of the individual gratings different from each other, it becomes possible to allow an error of 100 nm or more in the vertical position accuracy.
Further, in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to the present embodiment, the high resolution S
A NOM image could be obtained. In addition, an information processing device capable of reducing the recording pit diameter during recording (see FIG.
0) can be realized, and the recording pit has a diameter of 1
It was confirmed that the recording was made at 00 nm. It was also confirmed that the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 9] In Embodiment 9 of the present invention, a member having a conical through hole formed by anisotropic etching of Si, a support for supporting the member, and the inside of the support are provided. The present invention relates to a probe manufacturing method for manufacturing a probe having a waveguide layer provided and a grating formed on a surface of the waveguide layer located below the member. The probe manufactured according to this embodiment has, for example, as shown in FIG.
Exposure of a fine pattern is performed by introducing light directly from the end face of the waveguide layer having a probe or through an optical element such as a fiber and bringing the photoresist close to a distance covered by the near-field light emitted from the minute aperture. Used for.

FIG. 9 is a cross-sectional view showing the manufacturing process of the probe for irradiating a minute light beam according to the present embodiment, and the manufacturing method will be described below using this. The lateral position error in the crimping process of the alignment apparatus used in this embodiment is larger than the minimum beam diameter that can be formed in the probe, and the vertical position accuracy is 100 n.
m. First, as the first substrate 13, the plane orientation (100)
The single crystal silicon wafer of 1 was prepared, and a 100 nm thick silicon thermal oxide film was formed as the protective layer 14 (FIG. 9A).

Next, a desired portion of the protective layer 14 is patterned by photolithography and etching with an aqueous solution of hydrogen fluoride and ammonium fluoride, so that one side is 1 side.
A 0 μm square of silicon was exposed. Next, the silicon of the patterning portion was etched by crystal axis anisotropic etching using a potassium hydroxide aqueous solution using a potassium hydroxide aqueous solution having a concentration of 30% and a liquid temperature of 90 ° C. Through this process, the depth surrounded by four planes equivalent to the (111) plane is about 7
An inverted pyramid-shaped concave portion 15 of μm was formed (FIG. 9).
(See (b))). At this time, the angle formed by each of the four surfaces of the recess 15 and the surface of the first substrate 13 was determined by the crystal orientation and was about 55 °.

Next, the protective layer 14 is removed with an aqueous solution of hydrogen fluoride and ammonium fluoride, and then thermally oxidized at 1000 ° C. using a mixed gas of hydrogen and oxygen to deposit 400 nm of silicon dioxide as a peeling layer 16. did. By this method, the concave portion 15 was sharpened in the tip region, and the angle formed by the inner wall of the tip portion and the surface of the first substrate 13 was approximately 75 ° (FIG. 9C).

Next, on the first substrate 13, gold Au and platinum Pt are formed.
Are simultaneously deposited by the vacuum evaporation method, and the thickness is 100
nm. Further, platinum Pt is deposited to 50n by a vacuum deposition method.
m deposited. Finally, gold Au was deposited by a 300 nm vacuum evaporation method. These three layers are used as the light shielding layer 17 (see FIG. 9).
(D)). Next, the light shielding layer 17 was patterned by photolithography and etching (FIG. 9E).

Next, as the second substrate 18, the plane orientation (10
The single crystal silicon wafer of 0) was prepared, and silicon nitride was deposited to a thickness of 250 nm as the mask layer 19 on both surfaces of the second substrate 18 (FIG. 10A). Next, the V-groove 20 was formed in the mask layer 19 on the surface by photolithography and etching (FIG. 10B). Next, titanium Ti was deposited to a thickness of 5 nm by a vacuum evaporation method. Furthermore, by the vacuum evaporation method, gold Au
Was deposited to 100 nm. Finally, platinum P was deposited by vacuum deposition.
t was deposited to 50 nm. These three layers are collectively referred to as a light shielding layer (A) 21.

Next, SU8 was applied and patterned as the waveguide layer 22 (FIG. 10C). Next, 50 nm of platinum Pt was deposited by the vacuum evaporation method. Further, gold Au was deposited to 100 nm by a vacuum evaporation method. These two layers were used as a light shielding layer (B) 23. Next, the light shielding layer (A) 21 and the light shielding layer (B) 23 were patterned by photolithography and etching. Further, four 8 μm square gratings were patterned in the 10 μm square opening 24 where the waveguide layer was exposed by patterning with an electron beam processing apparatus as shown in FIG. 7B (FIG. 10D).

At this time, the grating pattern is obtained by the following equation. However, In the expression expressed as Was calculated by substituting m is an integer, n1 is a waveguide layer (SU
8), and n2 is the refractive index inside the probe (air).
In addition, α / (2 tan θ representing the focal length of the grating
The value of ₁ ) is the inner surface shape of the Si probe, Using, However, When a significant one of the solutions solved for the simultaneous equation y Α / (2 tan θ ₁ ) was set so that The result of the calculation, Therefore, in this embodiment, α / of four gratings is
(2 tan θ ₁ ) has a grating a of 4.8 × 1
0 ^-6 , b was 4.8 x 10 ^-6 , c was 7.0 x 10 ^-6 , and d was 7.2 x 10 ^-6 . However, for the gratings a and b, y is −3 × 10 ^{−6 in} the formula of the grating pattern.
To −5 × 10 ⁻⁶ , and for c and d, y was −5 × 10 ⁻⁶ to 3 × 10 ⁻⁶ .

By the process shown in this example, a probe having a high near-field light generation efficiency could be manufactured using Si, which is a material that is easy to process, safe, and inexpensive. Furthermore, by dividing the grating into a plurality of gratings that are slightly smaller than the opening 24,
The beam diameter near the beam waist can be reduced to a small value by increasing the N A of each grating, and the decrease in the amount of light incident perpendicularly on the minute aperture at the tip of the probe can be suppressed.

Further, by making the focal lengths of the individual gratings different from each other, the positional accuracy in the vertical direction in the pressure bonding step can be allowed to be 100 nm or more. Further, a high-resolution SNOM image could be obtained in the surface observation apparatus (FIGS. 17 and 18) using the probe using the probe according to this example. In addition, an information processing device capable of reducing the recording pit diameter during recording (see FIG.
0) can be realized, and the recording pit has a diameter of 1
It was confirmed that the recording was made at 00 nm. It was also confirmed that the diffraction grating manufactured by the exposure apparatus (FIG. 19) equipped with the probe using the probe according to the present example was manufactured with a grating pitch of 100 nm or less.

[Embodiment 10] FIG. 17 is a diagram showing an apparatus configuration in which the near-field optical probe of the present invention is applied to an illumination (irradiation) mode near-field optical microscope (SNOM).

In FIG. 17, a laser drive circuit 1601
Laser light emitted from the surface emitting laser 1602 driven by is transmitted through the transmission path in the near-field optical probe 1603 and emitted from the minute opening at the tip as near-field light.
Scattered light generated as a result of irradiating this near-field light to the sample surface 1605 on the substrate 1604 close to a distance of 100 nm or less is condensed by a condenser lens 1606 and detected by a photomultiplier tube 1607. The SNOM signal is input to the measurement control computer 1608.

On the other hand, the back surface of the cantilever portion of the near-field optical probe is irradiated with the laser light emitted from the AFM laser 1609, and the angle change of the reflected light is divided into two.
At 610, the amount of bending of the cantilever is detected to obtain an atomic force microscope (AFM) signal reflecting the sample surface shape, which is input to the measurement control computer 1608.

From the measurement control computer 1608, xy
A drive signal for driving the z stage 1611 is output via the stage drive circuit 1612 to control the three-dimensional position of the xyz stage 1611.

In the measurement control computer 1608, xy
By driving the z stage 1611, the sample 160
5, the tip of the near-field optical probe 1603 is scanned, and the SNOM signal and the AFM signal are three-dimensionally plotted according to the position of the probe to obtain the SNOM image and the AF of the sample surface.
An M image is formed and displayed on the display 1613.

By constructing an illumination mode SNOM device using the near-field optical probe of the present invention,
It was possible to observe stable SNOM images and AFM images without destroying the sample surface even when scanning with a probe tip in contact with a soft sample such as a biomolecule.

[Embodiment 11] FIG. 18 is a diagram showing a device configuration in which the near-field optical probe of the present invention is applied to a SNOM in a collection (focusing) mode. In FIG. 18, SN
Sample 1 on substrate 1703 in which laser light emitted from OM laser 1701 is mounted on rectangular prism 1702
The light is incident on the surface 704 from the back surface at an angle of total reflection. As a result, the near-field light generated on the sample surface is detected by the minute aperture at the tip of the near-field optical probe 1705, transmitted through the transmission path in the near-field optical probe and detected by the photodiode 1706, and the measurement control computer as an SNOM signal. 170
Type in 7.

Other than the above, the operation is similar to that of the SNOM in the illumination mode described above. By configuring the SNOM device in the collection mode using the near-field optical probe of the present invention, even if scanning is performed with the probe tip in contact with a soft sample such as a biomolecule, the sample surface is stable without being destroyed. SNOM images and AFM images could be observed.

[Embodiment 12] FIG. 19 is a diagram showing a configuration in which the near-field optical probe of the present invention is applied to a fine processing apparatus. Similar to the SNOM in the illumination mode described above, the near-field light generated from the minute opening at the tip of the near-field optical probe 1801 is applied to the resist 1802 on the substrate, and the resist 1802 is exposed (latent image formation). Here, as the surface emitting laser 1803 for exposure, a resist 180 is used.
A material that emits light having a wavelength for exposing 2 is used.

SNOM in the illumination mode described above
The AFM signal obtained in the same manner as above is aligned (alignment).
Is input to the alignment / exposure control computer 1804 as a control signal for use in aligning the resist 1802 with the near-field optical probe 1801.

By constructing a microfabrication apparatus using the near-field optical probe of the present invention, stable microfabrication can be performed without destroying the resist surface even when scanning is performed with the probe tip in contact with a soft resist. I was able to do it.

[Embodiment 13] FIG. 20 is a diagram showing a configuration in which the near-field optical probe of the present invention is applied to a storage device. Similar to the illumination mode SNOM described above, the near-field light generated from the minute aperture at the tip of the near-field optical probe 1901 is irradiated onto the recording medium 1902 on the substrate to perform recording / reproduction. Recording is performed using near-field light with high intensity by increasing the intensity of laser light, and near-field light with low intensity is applied to the recording medium 1902 by weakening the intensity of laser light to scatter the transmitted light. Condensing lens 1
Avalanche photodiode 190 after condensing at 903
In step 4, the intensity is detected to produce a reproduction signal, which is input to the recording / reproduction control computer 1905.

The recording / reproduction control computer 1905 drives the rotary motor through the rotary motor drive circuit 1906 to drive the recording medium 190 to the near-field optical probe 1901.
Rotate 2. SN of the illumination mode mentioned above
The AFM signal obtained in the same manner as the OM is a recording / reproduction control computer 19 as a control signal for positioning (tracking).
05, and is used to align the recording medium 1902 with the near-field optical probe 1901.

By constructing a storage device using the near-field optical probe of the present invention, even if scanning is performed with the probe tip in contact with a soft recording medium such as an organic material, the surface of the recording medium is not destroyed. It was possible to perform stable recording and reproduction.

[0110]

According to the present invention, when a grating having a desired performance adapted to the shape of the probe is manufactured in the waveguide layer under the probe, the manufacturing is easy and required in the manufacturing process. A probe capable of allowing an error in accuracy and a method for manufacturing the same, and a probe for detecting or irradiating near-field light including a structure having such a grating pattern, and the probe It is possible to realize a probe having a probe, an information processing device having the probe, a surface observation device, an exposure device, and an optical element by the exposure device.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining a conditional expression relating to a grating pattern obtained from an interference pattern of a spherical wave and a plane wave of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the probe according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a manufacturing process of the probe according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a manufacturing process of the probe according to the embodiment of the present invention.

FIG. 5 is a diagram showing the maximum length of a grating and the definition of a two-dimensional figure in the embodiment of the present invention.

FIG. 6 is a diagram showing a method of allowing a lateral position error in a crimping step in the embodiment of the present invention.

FIG. 7 is a diagram showing a form of a grating formed in a probe according to an embodiment of the present invention.

FIG. 8 is a diagram showing an example of a usage pattern of a probe in Examples 1 to 9 of the present invention.

FIG. 9 is a cross-sectional view showing the manufacturing process of the probe according to the first embodiment and the fourth to ninth embodiments of the present invention.

FIG. 10 is a cross-sectional view showing the process of manufacturing a probe according to Examples 1 to 9 of the present invention.

FIG. 11 is a cross-sectional view showing the process of manufacturing the probe according to Examples 1 to 9 of the present invention.

FIG. 12 is a schematic diagram for explaining a conditional expression for obtaining optimum performance when correcting the light collection angle of the grating of the present invention with respect to the angle of the hypotenuse of the inner surface of the through hole.

FIG. 13 is a cross-sectional view showing the manufacturing process of the probe according to the second embodiment of the present invention.

FIG. 14 is a cross-sectional view showing the manufacturing process of the probe according to the second embodiment of the present invention.

FIG. 15 is a perspective view of a probe according to a second embodiment of the present invention.

FIG. 16 is a cross-sectional view showing the manufacturing process of the probe according to the fourth embodiment of the present invention.

FIG. 17 is a schematic diagram showing an example of a surface observation apparatus using a probe in Examples 1 to 12 of the present invention.

FIG. 18 is a schematic diagram showing an example of a surface observation apparatus using a probe in Examples 1 to 13 of the present invention.

FIG. 19 is a first to eleventh embodiment and a fourteenth embodiment of the present invention.
3 is a schematic view showing an example of an exposure apparatus using the probe in FIG.

FIG. 20 shows Examples 1 to 11 and 15 of the present invention.
3 is a schematic diagram showing an example of an information processing device using the probe in FIG.

FIG. 21 is a cross-sectional view of a step of the method for manufacturing the probe having the substantially triangular pyramid-shaped through hole of the present invention.

[Explanation of symbols]

1: substrate 1 2: Conical depression 3: Silicon dioxide 4: Light shielding layer 5: Probe 6: Silicon nitride film 7: Substrate 2 8: Light shielding layer 9: Waveguide layer 10: Light shielding layer 11: opening 12: Grating 13: First substrate 14: Protective layer 15: Recess 16: Release layer 17: Light shielding layer 18: Second substrate 19: Mask layer 20: V groove 21: Shading layer A 22: Waveguide layer 23: Light-shielding layer B 24: Opening 25: Film thickness adjusting layer 26: Micro aperture 27: Mask layer 28: First substrate 29: Protective layer 30: convex part 31: Release layer 32: Support layer 33: Recess 34: Probe material layer 35: First substrate 36: Mask layer 37: convex part 38: Release layer 39: Support layer 40: Recess 41: Probe material layer 1601: Laser drive circuit 1602: surface emitting laser 1603: Optical probe 1604: substrate 1605: sample 1606: Condensing lens 1607: Photomultiplier tube 1608: Measurement control computer 1609: AFM laser 1610: Two-divided sensor 1611: xyz stage 1612: Stage drive circuit 1613: Display 1701: Laser for SNOM 1702: Right angle prism 1703: substrate 1704: sample 1705: Optical probe 1706: Photodiode 1707: Measurement control computer 1801: Optical probe 1802: Resist 1803: Surface emitting laser for exposure 1804: Computer for alignment / exposure control 1901: Optical probe 1902: recording medium 1903: condenser lens 1904: Avalanche photodiode 1905: Recording / reproduction control computer 1906: rotary motor drive circuit 2001: First substrate 2002: Protective layer 2003: recess 2004: Release layer 2005: Light shielding layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G12B 21/06 G12B 1/00 601C F term (reference) 2H047 LA01 MA01 PA01 PA24 QA04 RA01 RA04 RA06 TA43 2H049 AA14 AA26 AA34 AA37 AA55 AA62 5D119 JA22 JA41 5D789 CA21 CA22 CA23 JA22 JA41 JA66

Claims (33)

[Claims] 1. A member having a conical optical through hole formed therein,
In a probe provided with a waveguide layer located below the member, a grating formed on a surface of the waveguide layer located below the member includes a spherical wave in the probe and a plane wave in the waveguide layer. A probe having a grating pattern obtained from the interference pattern of 1. 2. The probe according to claim 1, wherein the grating pattern satisfies the following conditional expression. here, m: integer. α: Maximum length of grating. θ1: Convergence angle of light guided from the grating. Here, α is the maximum length of the two-dimensional figure that is the bottom surface inside the through hole, and θ1 is the angle of the inside surface of the through hole. The x-axis is in the waveguide direction of the plane wave in the waveguide layer, and the y-axis is in the waveguide layer perpendicular to the x-axis. The z axis is taken perpendicular to the x and y axes. The foot of the perpendicular drawn from the focal point of the grating to the xy plane is taken as the origin of the coordinate axes. λ: wavelength of incident light. n ₁ : Refractive index of the waveguide layer. n ₂ : Refractive index inside the through hole. 3. The probe according to claim 1, wherein the through-hole has a substantially square pyramid shape. 4. The probe according to claim 3, wherein the substantially quadrangular pyramid through hole is a through hole formed by Si crystal axis anisotropic etching. 5. The probe according to claim 1, wherein the through hole has a substantially triangular pyramid shape. 6. The substantially triangular pyramid through hole is formed of Si, GaA.
The probe according to claim 5, wherein the probe is a through hole formed by etching s and GaP. 7. The probe according to claim 1, wherein the through hole has a substantially conical shape. 8. The probe according to claim 7, wherein the substantially conical through hole is a through hole formed by etching Si. 9. The grating is formed in the lower portion of the probe, with an angle between the hypotenuse of the inner surface of the through hole and a perpendicular line from the probe apex to the bottom surface of the through hole being θ2, and the maximum length of the bottom surface of the through hole being β. When the lateral position error in the probe crimping process in the two-dimensional grating having the maximum length α is Δ, the focal length α / (2tan θ ₁ ) is set to satisfy the following condition. The probe according to claim 1, wherein the probe is provided. However, y ₁ is Let the simultaneous equations of y be significant among the solutions solved for y. 10. The grating has a maximum length that is smaller than a length between probe pedestal portions formed at a hem portion of the member and larger than a maximum length of a bottom surface of the through hole. The probe according to claim 9, which is characterized in that: 11. The probe is characterized in that the angle between the hypotenuse of the inner surface of the through hole and a perpendicular line from the probe apex to the bottom surface of the through hole is θ ₂ and the maximum length of the bottom surface of the through hole is β. 2 with a maximum length α and a collection angle θ ₁ to be produced in the lower part
When the vertical position error in the probe crimping process at the focal length of the three-dimensional shape grating is Δ, α / (2tan θ ₁ ) representing the focal length is set so as to satisfy the following condition. The probe according to any one of claims 1 to 8, which is characterized. However, Of the solutions obtained by solving the simultaneous equations of y with respect to y, the significant one is defined as y _1, and α / (2 tan θ that minimizes this y _1
Let the value of ₁ ) be Z ₁ . 12. The probe according to claim 9, wherein the grating is composed of an assembly of a plurality of gratings arranged side by side. 13. The probe according to any one of claims 9 to 11, wherein the grating is formed by arranging a plurality of overlapping portions of the grating so as to be offset from each other. 14. The probe according to claim 1, wherein an inner surface of the through hole has a condensing function by reflection. 15. A method for manufacturing a probe, wherein a member having a conical-shaped optical through hole is transferred to a member having a waveguide layer located below the member to manufacture a probe. When forming a grating on the surface of the waveguide layer, an interference pattern formed by causing a spherical wave in the probe and a plane wave in the waveguide layer to interfere with each other is projected on the grating formation surface of the waveguide layer, and the interference pattern A method for manufacturing a probe, comprising patterning as a grating pattern. 16. The method of manufacturing a probe according to claim 15, wherein the grating pattern satisfies the following conditional expression. here, m: integer. α: Maximum length of grating. θ1: Convergence angle of light guided from the grating. Here, α is the maximum length of the two-dimensional figure that is the bottom surface inside the through hole, and θ1 is the angle of the inside surface of the through hole. The x-axis is in the waveguide direction of the plane wave in the waveguide layer, and the y-axis is in the waveguide layer perpendicular to the x-axis. The z axis is taken perpendicular to the x and y axes. The foot of the perpendicular drawn from the focal point of the grating to the xy plane is taken as the origin of the coordinate axes. λ: wavelength of incident light. n ₁ : Refractive index of the waveguide layer n ₂ : Refractive index inside the through hole. 17. The method for manufacturing a probe according to claim 15, wherein the through hole is formed into a substantially quadrangular pyramid. 18. The method for manufacturing a probe according to claim 17, wherein the through hole of the substantially quadrangular pyramid is formed by Si crystal axis anisotropic etching. 19. The method of manufacturing a probe according to claim 15, wherein the through hole is formed in a substantially triangular pyramid. 20. The through hole of the substantially triangular pyramid is made of Si, GaA
20. The method for manufacturing a probe according to claim 19, wherein s and GaP are formed by etching. 21. The method for manufacturing a probe according to claim 15, wherein the through hole is formed in a substantially conical shape. 22. The substantially conical through hole is formed by etching Si.
1. The method for manufacturing the probe according to 1. 23. The grating is formed in the lower portion of the probe, with an angle between the hypotenuse of the inner surface of the through hole and a perpendicular line extending from the probe apex to the bottom surface of the through hole being θ2, and the maximum length of the bottom surface of the through hole being β. When the error in the lateral position of the probe crimping process in the two-dimensional shape grating having the maximum length α is Δ, then α / (2tan θ ₁ ) representing the focal length is
23. The method for manufacturing a probe according to claim 15, wherein the probe is set so as to satisfy the following condition. However, y ₁ is Let the simultaneous equations of y be significant among the solutions solved for y. 24. The grating has a maximum length smaller than a length between probe pedestal portions formed at a hem of the member and larger than a maximum length of a bottom surface of the through hole. The method for manufacturing a probe according to claim 23, wherein: 25. When the angle between the hypotenuse of the inner surface of the through hole and the perpendicular line from the probe apex to the bottom surface of the through hole is θ ₂ and the maximum length of the bottom surface of the through hole is β, the grating is a probe. 2 with a maximum length α and a collection angle θ ₁ to be produced in the lower part
When the vertical position error in the probe crimping process at the focal length of the three-dimensional shaped grating is Δ, α / (2tan θ ₁ ) representing the focal length is set so as to satisfy the following condition. The method for manufacturing a probe according to any one of claims 15 to 22. However, Of the solutions obtained by solving the simultaneous equations of y with respect to y, the significant one is defined as y _1, and α / (2 tan θ that minimizes this y _1
Let the value of ₁ ) be Z ₁ . 26. The method for manufacturing a probe according to claim 23, wherein the grating is formed by an aggregate in which a plurality of gratings are arranged. 27. The method of manufacturing a probe according to claim 23, wherein the grating is formed by arranging a plurality of overlapping portions of the gratings so as to be offset from each other. 28. The method for manufacturing a probe according to claim 15, wherein the through hole is formed so that an inner surface thereof has a condensing effect by reflection. 29. A probe according to any one of claims 1 to 14 or a probe manufactured by the method for manufacturing a probe according to any one of claims 15 to 28. probe. 30. An information processing apparatus comprising the probe according to claim 29. 31. A surface observation device comprising the probe according to claim 29. 32. An exposure apparatus comprising the probe according to claim 29. 33. An optical element produced by using the exposure apparatus according to claim 32.