JP2003168769A - Power semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which is excellent in heat dissipation even if an external radiator of low heat conductivity is used and is constituted to stant external impacts. <P>SOLUTION: The device has a plurality of power semiconductor elements 1, a plurality of conductive substrates 4 whereon the power semiconductor elements 1 are mounted, a wire line 3 for electrical connection between the power semiconductor elements 1, a plurality of terminal boards 61 and 62 for electrical connection between a plurality of power semiconductor elements 1 and an outside, an 0.2 to 0.8 mm-thick insulation sheet 5 disposed to cover an entire of a main surface (lower main surface) on the opposite side of a mounting surface (upper main surface) of the power semiconductor element 1 of the conductive substrate 4 and a flat heat sink 11 disposed so that its upper main surface comes into contact with a main surface on the opposite side of a contact surface of the insulation sheet 5 with the conductive substrate 4. An external radiator 8 is disposed so that its flat surface is in contact with a lower main surface of the heat sink 11 via grease 12 in between. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device, and more particularly to a heat dissipation structure for a power semiconductor device in which a power semiconductor element is resin-sealed and packaged.

[0002]

2. Description of the Related Art A power semiconductor device in which a plurality of power semiconductor elements are packaged has been devised to efficiently dissipate heat generated by the power semiconductor element.

As an example of a conventional power semiconductor device, the structure of a semiconductor package 90 will be described with reference to FIGS. 4 and 5. As shown in FIGS. 4 and 5, the semiconductor package 90 includes a plurality of power semiconductor elements 1, a plurality of conductive substrates 4 on which the power semiconductor elements 1 are mounted, and an electrical connection between the power semiconductor elements 1. A wire wire 3 for connection, a plurality of terminal plates 61 and 62 for electrically connecting the plurality of power semiconductor elements 1 to the outside, and a side of the conductive substrate 4 opposite to the mounting surface of the power semiconductor element 1. And an insulating sheet 5 disposed on the main surface of the.

The power semiconductor element 1 has a main surface (referred to as a first main surface) facing the conductive substrate 4 and a main surface opposite to the main surface (referred to as a second main surface), respectively. A main electrode is provided, and the main electrode on the first main surface side is electrically connected to the conductive substrate 4 via the conductive bonding material 2 and between the terminal plate 61 and the conductive substrate 4. The main current flows.

Therefore, the terminal board 61 is electrically connected to the conductive substrate 4 through the conductive bonding material 2. The terminal plate 62 is electrically connected to the main electrode on the second main surface side of the power semiconductor element 1 by the wire line 3, and the conductive substrate 4 is provided.
Not connected to.

The conductive substrate 4, the terminal plates 61 and 62, the wire 3 and the power semiconductor element 1 are sealed with, for example, an epoxy resin, and a part of the terminal plates 61 and 62 is projected from the resin package 7 to the outside. It has a structure that

A depression corresponding to the area and thickness of the insulating sheet 5 is provided on the bottom surface of the resin package 7,
The lower main surface of the conductive substrate 4 is exposed on the bottom surface of the depression. The insulating sheet 5 is fitted into this recess and mounted on the external radiator 8.

Therefore, most of the heat generated by the power semiconductor element 1 is transferred to the external radiator 8 through the conductive substrate 4 and the insulating sheet 5 and is radiated.

FIG. 5 shows the structure of a cross section taken along line XX in FIG. As shown in FIG. 6, a plurality of power semiconductor elements 1 are mounted on a plurality of conductive substrates 4 by a predetermined number.

The semiconductor package 9 shown in FIGS. 4 and 5.
In 0, one set of terminal boards 61 and 62 and two semiconductor elements 1 are mounted on one conductive substrate 4 and
A plurality of element units E that form a set of element units EU
The Us are mounted on the insulating sheet 5 so as to be electrically insulated from each other.

The insulating sheet 5 is an essential component for maintaining electrical insulation between the element units EU, but as described above, the heat generated by the power semiconductor element 1 is applied to the external radiator 8
Therefore, a resin containing an insulating filler having a high thermal conductivity is used, but the thermal conductivity is smaller than that of a metal material, which is a factor that determines the thermal resistance.

Copper is generally used as the material of the conductive substrate 4, but aluminum is used as the material of the external radiator 8, and there is a difference in thermal conductivity between the two. . Here, the thermal conductivity of the copper material is approximately 380 W / mK, and the thermal conductivity of the pure aluminum material is approximately 240 W / mK.
Therefore, when pure aluminum is used as the external radiator 8, the difference in thermal conductivity does not become so large,
Since aluminum containing silicon (Si) is used,
The thermal conductivity becomes small.

That is, as shown in FIG. 4, the external radiator 8 has a complicated shape having a plurality of fins 81, and its manufacture is performed by casting. In this case, in order to obtain good moldability, Si is added to aluminum, but S
The thermal conductivity is lowered by containing i, and 180 W / mK
It will be about.

Therefore, the heat generated by the power semiconductor element 1 is transmitted from the conductive substrate 4 having a high thermal conductivity to the external radiator 8 through the insulating sheet 5 having a low thermal conductivity. Due to its low thermal conductivity, it does not release sufficient heat.

In particular, in a structure having a plurality of element units EU such as the semiconductor package 90, the area of the upper main surface, which is an element mounting surface of each conductive substrate 4, is limited due to area restrictions, and insulation The area of the lower main surface that contacts the sheet 5 is also limited. Therefore, the heat of the conductive substrate 4 is applied to a plurality of places of the external radiator 8, that is, the external radiator 8.
Are locally concentrated at the locations corresponding to the lower main surface, but in the external radiator 8 having a low thermal conductivity, the heat diffusion in the planar direction is not performed efficiently, so that the local heat is locally distributed. There is also a problem that the temperature rises and sufficient heat is not released.

Further, in the semiconductor package 90,
Since the insulating sheet 5 is exposed on the bottom surface, the insulating sheet 5 is easily damaged when an external force is applied.

As a concrete example of the conventional power semiconductor device, in Japanese Unexamined Patent Publication No. 10-93015, a resin insulating layer having a high thermal conductivity, such as a glass woven cloth, is coated with an epoxy resin between a heat sink and a lead frame. A technique is disclosed in which an impregnated resin adhesive sheet having a thickness of about 0.15 mm is sandwiched and thermocompression-bonded, and the whole is sealed with a resin including a heat sink. However, the glass woven fabric adhesive sheet usually has a thermal conductivity of about 1 to 3 W / mK and is not suitable for application to a high power electric power semiconductor device.

Further, since the heat radiation through the heat sink is carried out through a total of seven layers including the semiconductor element, the solder layer, the heat diffusion plate, the solder layer, the lead frame, the resin insulating layer and the heat sink, the heat radiation characteristic is limited. Therefore, also from this point, it is not suitable for application to a high-power power semiconductor device.

As a further example of a conventional power semiconductor device, in JP-A-6-310628, a heat sink on which a semiconductor element is mounted is separated for each element, and a conductor layer is provided on the main surface of a substrate. However, the purpose of separating the heat sinks is to improve the reliability of the heat cycle by applying the coating resin only on the individual heat sinks. Therefore, the insulation between the heat sinks is air insulation, and it is necessary to widen the heat sink intervals.

[0020]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and is excellent in heat dissipation even when an external radiator having a low thermal conductivity is used.
It is another object of the present invention to provide a power semiconductor device that is less likely to be damaged by an external force.

[0021]

According to a first aspect of the present invention, there is provided a power semiconductor device including: a heat dissipation plate made of metal;
An insulating sheet disposed on the heat radiating plate and closely attached to the heat radiating plate, and a lower main surface of the insulating sheet contacting the upper main surface of the insulating sheet, and the insulating sheets are electrically independent of each other. A plurality of conductive substrates, a power semiconductor element respectively disposed on the upper main surface of the plurality of conductive substrates, and at least a resin that seals the plurality of conductive substrates and the power semiconductor element with a resin. And a heat dissipation plate made of a material having a thermal conductivity equal to or higher than that of the plurality of conductive substrates.

According to a second aspect of the present invention, there is provided a power semiconductor device in which a plurality of ridges and linear grooves extending in one direction of the upper main surface are alternately arranged in parallel in the heat dissipation plate. Each of the plurality of conductive substrates has a wavy shape
It has a corrugated shape in which a plurality of ridges and grooves are alternately arranged in parallel all over the lower main surface, and the corrugated shape of the heat dissipation plate and the corrugated shape of the conductive substrate are congruent. In relation to each other, the protrusions of the plurality of conductive substrates and the groove of the heat dissipation plate are arranged so as to face each other with the insulating sheet interposed therebetween.

According to a third aspect of the present invention, there is provided a power semiconductor device in which the insulating sheet is made of silicone rubber containing an inorganic material filler, a principal surface of which is coated with an adhesive substance and has a hardness of , 10 on the Asker C scale
It has a hardness of -50.

According to a fourth aspect of the present invention, there is provided a power semiconductor device, wherein at least the edge portions of the resin package and the heat dissipation plate are in a state where the heat dissipation plate and the insulating sheet are sealed in the resin package. In, the power semiconductor device is screwed to a radiator provided outside through the plurality of through holes.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION <A. Embodiment 1><A-1. Device Configuration> As a first embodiment of a power semiconductor device according to the present invention, a configuration of a semiconductor package 100 will be described with reference to FIGS. 1 and 2.

As shown in FIGS. 1 and 2, the semiconductor package 100 includes a plurality of power semiconductor elements 1, a plurality of conductive substrates 4 on which the power semiconductor elements 1 are mounted, and power semiconductor elements 1 and 2. Wire lines 3 for making electrical connection with each other, a plurality of terminal plates 61 and 62 for making electrical connection between the plurality of power semiconductor elements 1 and the outside, and the mounting surface of the power semiconductor element 1 on the conductive substrate 4 ( An insulating sheet 5 having a thickness of 0.2 to 0.8 mm arranged on a main surface (lower main surface) opposite to the upper main surface, and a contact surface of the insulating sheet 5 with the conductive substrate 4. Is provided with a flat plate-shaped heat radiating plate 11 arranged on the opposite main surface so that its upper main surface is in contact. And the heat sink 1
An external radiator 8 is arranged on the lower main surface of 1 so that its flat surface contacts with the grease 12 interposed therebetween.

The power semiconductor device 1 has a main surface (lower main surface) facing the conductive substrate 4 and a main surface (upper main surface) opposite to the main surface.
And a main electrode on the first main surface side, and the main electrode on the first main surface side is electrically connected to the conductive substrate 4 via a conductive bonding material 2, for example, a solder layer, Terminal board 6
The main current flows between 1 and 1. Therefore, the conductive substrate 4 also has a function as a wiring conductor, and the terminal plate 61 is electrically connected to the conductive substrate 4 via the conductive bonding material 2. The conductive substrate 4 is made of a material having good electric conductivity and thermal conductivity, for example, copper. The terminal plate 62 is electrically connected to the main electrode on the second main surface side of the power semiconductor element 1 by the wire 3 and is not connected to the conductive substrate 4.

Then, the conductive substrate 4, the terminal plates 61 and 62, the wire 3 and the power semiconductor element 1 are sealed with, for example, an epoxy resin, and a part of the terminal plates 61 and 62 is projected from the resin package 7 to the outside. It has a structure that

A depression corresponding to the area and thickness of the insulating sheet 5 is provided on the bottom surface of the resin package 7,
The lower main surface of the conductive substrate 4 is exposed on the bottom surface of the depression. The insulating sheet 5 is fitted into this recess, and the heat sink 11
Mounted on. The depth of the depression may be equal to or less than the thickness of the insulating sheet 5.

FIG. 2 shows the structure of a cross section taken along line AA in FIG. As shown in FIG. 2, a plurality of power semiconductor elements 1 are mounted on a plurality of conductive substrates 4 arranged on an insulating sheet 5 in a predetermined number.

A semiconductor package 1 shown in FIGS. 1 and 2.
In 00, one set of terminal boards 61 and 62 and two semiconductor elements 1 are mounted on one conductive substrate 4 to form one set of element units EU, and the plurality of element units EU are mutually connected. It is mounted on the insulating sheet 5 so as to be electrically insulated. The element unit E
U is not limited to the configuration described above, and may have a larger number of semiconductor elements 1, may have a plurality of sets of terminal plates 61 and 62, and may have an integrated circuit. Further, the element units EU may be electrically connected to each other.

Here, the heat dissipation plate 11 is made of the same material as the conductive substrate 4, for example, copper, and its main surface is mounted with an array of a plurality of conductive substrates 4 and is set to a size having a further margin. Has been done. The insulating sheet 5 has an area corresponding to the array region of the conductive substrates 4.

The insulating sheet 5 is made of silicone rubber or the like containing an inorganic material filler having a high thermal conductivity,
An adhesive substance is applied to its main surface and is in close contact with the plurality of conductive substrates 4 and the heat dissipation plate 11. As the inorganic material filler, alumina (Al ₂ O ₃ ), aluminum nitride (AlN), boron nitride (BN), silicon carbide (SiC), silica (SiO ₂ ), or a mixture of a plurality of these is used. To be done. The thermal conductivity of the insulating sheet 5 is 3 to 15 W / mK, and its hardness is measured using an Asker C-type hardness tester, which is one of the testing methods for expanded rubber of the Japan Rubber Association standard. It has a hardness of 10 to 50 on the (Asker C scale). The hardness becomes softer as the numerical value becomes smaller, the adhesion with the heat dissipation plate 11 improves, the contact heat resistance decreases and the heat dissipation property improves, but when the hardness becomes 10 or less, the mechanical strength decreases and the handling Becomes difficult. Also, hardness 5
When it is 0 or more, the contact thermal resistance becomes so large that it cannot be ignored.

When the power semiconductor device is used for an inverter or the like, the grease 12 is applied to the other main surface of the heat dissipation plate 11, and the flat surface of the external radiator 8 (heat sink) (fin 81 is not used). The main surface on the other side is in close contact with. The thermal conductivity of the grease 12 is 1 to 3 W / mK.

In the manufacture of the semiconductor package 100, the conductive substrate 4, the terminal plates 61 and 62, the wire 3 and the power semiconductor element 1 are sealed with, for example, an epoxy resin and provided on the bottom surface of the resin package 7. Further, the insulating sheet 5 may be fitted into a recess matching the area and thickness of the insulating sheet 5 and mounted on the heat dissipation plate 11.

Incidentally, a plurality of conductive substrates 4 are mounted on the insulating sheet 5, and the power semiconductor element 1 and the terminal plates 61 and 62 are mounted on the conductive substrate 4, and sealing is performed with an epoxy resin. Thus, the insulating sheet 5 may be sealed in the resin package 7. In this case, the lower main surface of the insulating sheet 5 is exposed from the bottom surface of the resin package 7.

In addition to the insulating sheet 5, the heat sink 1
1 may also be resin-sealed together.

Further, as shown in FIG. 2, through holes HL communicating with the respective edge portions of the resin package 7 and the heat dissipation plate 11 are provided, and the external radiator 8 is provided with screw holes SL at positions corresponding to the through holes HL. Is provided, and both are fastened with screws 13, so that the radiator plate 11 and the external radiator 8 are coupled,
At that time, the insulating sheet 5 is pressed in the thickness direction to improve the adhesion between the conductive substrate 4 and the external radiator 8. Also,
At this time, the grease 12 is also pressed to form an extremely thin layer.

<A-2. Function and Effect> In the semiconductor package 100 described above, the heat generated by the power semiconductor element 1 is first diffused to the entire conductive substrate 4 made of copper and transmitted to the heat dissipation plate 11 via the insulating sheet 5. The heat dissipation plate 11 is made of copper having a good thermal conductivity, and the heat locally transmitted through the conductive substrate 4 diffuses in the plane direction and is distributed in the heat dissipation plate 11.

The heat of the radiator plate 11 is transmitted to the external radiator 8 through the thin layer of the grease 12, but since the radiator plate 11 has a uniform temperature, heat concentration occurs in the external radiator 8. And the heat is dissipated by the fin 81.

As described above, by disposing the heat dissipation plate 11 made of a material having a good thermal conductivity between the insulating sheet 5 and the external radiator 8, the external radiator 8 is made of a material having a low thermal conductivity. Even when configured, it is possible to obtain a power semiconductor device in which the heat dissipation characteristics are not deteriorated.

Further, since the main surface of the insulating sheet 5 is covered with the heat dissipation plate 11, the insulating sheet 5 is less likely to be damaged by an external force, and the occurrence of insulation failure due to the damage can be prevented.

In the semiconductor package 100, the conductive substrate 4 and the heat sink 11 are made of copper, but the heat sink 11 is made of a material having a thermal conductivity equal to or higher than that of the conductive substrate 4. As long as it is configured, the heat dissipation plate 11 and the conductive substrate 4 may be made of different materials.

<B. Second Embodiment><B-1. Device Configuration> As a second embodiment of the power semiconductor device according to the present invention, a semiconductor package 2 will be described with reference to FIG.
The configuration of 00 will be described.

As shown in FIG. 3, the semiconductor package 200
Is a plurality of power semiconductor elements 1, a plurality of conductive substrates 4A on which the power semiconductor elements 1 are mounted, wire lines 3 for electrically connecting the power semiconductor elements 1, and a plurality of power A plurality of terminal plates 61 and 62 for electrically connecting the semiconductor element 1 to the outside, and a main surface (lower main surface) of the conductive substrate 4A opposite to the mounting surface (upper main surface) of the power semiconductor element 1 thereon. ) The insulating sheet 5A having a thickness of about 0.5 mm arranged so as to cover the entire surface and the upper main surface of the insulating sheet 5A are in contact with the main surface of the insulating sheet 5A opposite to the contact surface with the conductive substrate 4A. The heat radiating plate 11A thus arranged is provided, and the external heat radiator 8 is arranged on the lower main surface of the heat radiating plate 11A so that its flat surface is in contact with the grease 12 in between. In addition, other than that, the same components as those of the semiconductor package 100 shown in FIGS.

Here, in that the heat sink 11A made of a material having a good thermal conductivity is provided between the insulating sheet 5A and the external radiator 8, the semiconductor package described with reference to FIGS. Similar to 100, but with heat sink 11
The main surface of A on which the conductive substrate 4A is mounted is the heat sink 11
A plurality of ridges CP and linear grooves GP are alternately arranged in parallel over almost the entire surface of A to form a corrugated shape, and the conductive substrate 4A is formed so as to correspond to the shape of the main surface. The lower main surface is also formed in a wavy shape.

Here, the heat sink 11A and the conductive substrate 4
The corrugated shape provided on A is 3 times the thickness of the heat sink 11A.
It has a depth of a valley and a height of a peak of about one-half, and the protrusion GP of the conductive substrate 4A is provided in the groove GP of the heat sink 11A.
And the conductive substrate 4 is attached to the ridge CP of the heat sink 11A.
A plurality of conductive substrates 4A are arranged so that the groove portions of A face each other.

<B-2. Effect> As described above, by making the surfaces of the heat dissipation plate 11A and the conductive substrate 4A facing each other into a wavy shape, the surface area of the insulating sheet 5A sandwiched between the two increases, and the thermal resistance is reduced. You can

From the viewpoint of preventing damage to the insulating sheet 5A, the corrugated shape provided on the heat dissipation plate 11A and the conductive substrate 4A has a sine wave shape having a gentle curved surface. A configuration in which U-shaped cross-sectional shapes are continuous may be used if it can be prevented.

Further, in the semiconductor package 200, the resin package 7 also seals the heat sink 11A with resin, but the heat sink 1 facing the flat surface of the external radiator 8 is also included.
The lower main surface of 1A is exposed from the bottom surface of the resin package 7, and is in contact with the flat surface of the external radiator 8 with the grease 12 interposed therebetween.

The resin package 7 is the insulating sheet 5A.
Insulating sheet 5A and heat sink 11A that seal the above configuration
It goes without saying that the above may not be sealed.

The heat radiation plate 11A and the external heat radiator 8 are coupled to each other by the resin package 7 as described with reference to FIG.
A through hole HL into which a screw is inserted is provided at an edge portion of the external radiator 8, and a screw hole SL is provided at a position corresponding to the through hole HL in the external radiator 8.
It suffices to fasten both with screws 13.

Incidentally, Japanese Patent Laid-Open No. 4-94153 discloses that
A configuration is disclosed in which a lower main surface of an island on which a semiconductor element is mounted is formed in a corrugated shape, one main surface of a heat dissipating fin arranged oppositely is also formed in a corrugated shape, and the corrugated shapes of both are arranged to face each other. There is. However, the island and the radiating fin are resin-sealed, and the wave-shaped gaps facing each other are filled with the sealing resin. Therefore, the heat generated in the semiconductor layer on the island is transmitted to the heat radiation fin through the sealing resin, and the heat radiation characteristic is defined by the thermal conductivity of the sealing resin.

If a resin containing a high density of filler is used to increase the thermal conductivity, the manufacturing cost increases, and the gap between the island and the radiation fin is formed narrow to reduce the thermal resistance. However, if you try to fill a resin that contains filler with a high density and has low fluidity,
Problems such as voids occur.

However, the insulating sheet 5A in the present embodiment can be preliminarily configured to contain a high density of filler, the thermal resistance can be reduced, and voids are not generated.

Further, as the material of the resin package 7,
Since it is not necessary for the resin to contain an expensive filler having a high thermal conductivity in a high density, it is possible to reduce the manufacturing cost.

[0057]

According to the power semiconductor device of the first aspect of the present invention, the heat generated by the power semiconductor element is first diffused over the individual conductive substrates, and then the heat radiating plate is inserted through the insulating sheet. Be transmitted to. The conductive substrate is made of a material having a good thermal conductivity such as copper, and the heat dissipation plate is also made of a material having a thermal conductivity equal to or higher than that of the conductive substrate. The heat that is transmitted is diffused in the plane direction of the heat dissipation plate and distributed in the heat dissipation plate. Therefore, for example, when the radiator plate is attached to the radiator provided outside, a heat concentration portion does not occur in the external radiator, and the external radiator is made of a material having low thermal conductivity. Even in such a case, it is possible to obtain a power semiconductor device in which the heat dissipation characteristics are not deteriorated. Since the lower main surface of the insulating sheet is covered with the heat radiating plate, the insulating sheet is less likely to be damaged by an external force, and it is possible to prevent the occurrence of defective insulation due to the damage.

According to the second aspect of the power semiconductor device of the present invention, since the main surfaces of the heat dissipation plate and the conductive substrate which face each other have a wavy shape, the insulating sheet sandwiched between the two faces is formed. A surface area is increased, thermal resistance can be reduced, and a power semiconductor device with improved heat dissipation characteristics can be obtained.

According to the third aspect of the power semiconductor device of the present invention, the adhesion to the heat sink is improved and the contact thermal resistance is reduced to improve the heat dissipation characteristics, while maintaining the mechanical strength. Thus, it is possible to obtain an insulating sheet that is easy to handle.

According to the power semiconductor device of the fourth aspect of the present invention, since the power semiconductor device is screwed to the radiator provided outside through the plurality of through holes, the insulating sheet is provided. The pressure is applied in the thickness direction to improve the adhesion between the conductive substrate and the external radiator.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of a power semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing the configuration of the power semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a power semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a configuration of a conventional power semiconductor device.

FIG. 5 is a cross-sectional view showing a configuration of a conventional power semiconductor device.

[Explanation of symbols]

1 power semiconductor element, 4 conductive substrate, 5 insulating sheet, 7 resin package, 8 external radiator, 11 heat sink, GP groove, CP ridge, HL through hole.

Claims (4)

[Claims] 1. A heat dissipation plate made of metal, an insulating sheet disposed on an upper main surface of the heat dissipation plate and in close contact with the heat dissipation plate, an upper main surface of the insulating sheet, and a lower main surface thereof. A plurality of conductive substrates that are in contact with each other and that are electrically independent of each other, and power semiconductor elements that are respectively disposed on the upper main surfaces of the plurality of conductive substrates, A power semiconductor, comprising: a conductive substrate and a resin package that seals the power semiconductor element with a resin, wherein the heat dissipation plate is made of a material having a thermal conductivity equal to or higher than that of the conductive substrates. apparatus. 2. The heat dissipation plate has a corrugated shape in which a plurality of ridges and linear grooves extending in one direction of the upper main surface are alternately arranged in parallel, and the plurality of conductive members are provided. Each of the substrates has a wavy shape in which a plurality of ridges and grooves are alternately arranged in parallel over the entire lower main surface, and the wavy shape of the heat dissipation plate and the wavy shape of the conductive substrate are provided. The shape has a congruent relationship, and the protrusions of the plurality of conductive substrates and the groove of the heat dissipation plate are arranged so as to face each other with the insulating sheet interposed therebetween. 1. The power semiconductor device according to 1. 3. The insulating sheet is composed of silicone rubber containing an inorganic material filler, an adhesive substance is applied to the main surface thereof, and the hardness thereof is 10-50 on the Asker C scale. The power semiconductor device according to claim 1 or 2. 4. The power radiating plate and the insulating sheet are sealed in the resin package, and have a plurality of through holes communicating at least at an edge portion of the resin package and the heat radiating plate. 3. The power semiconductor device according to claim 1, wherein the power semiconductor device is screwed to a radiator provided outside through the plurality of through holes.