JP2003109799A - Plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of subjecting a large-area substrate to a modification treatment or the like while moving the substrate by making an external dielectric 1 and an internal dielectric 3 long with a tubular body. SOLUTION: The external dielectric 1 is composed of an insulating tube, and an external electrode 2 is composed of a conductor in close contact with a peripheral surface of the external dielectric 1. The internal dielectric 3 is composed of an insulating tube arranged concentrically within the external dielectric 1, and an internal electrode 4 is composed of a conductor in close contact with an inner wall surface of the external dielectric 3. A gas inlet 7 serves to supply a gas between the external dielectric 1 and the internal dielectric 3, and an AC power source 5 is connected between the external electrode 2 and the internal electrode 4. A plasma is generated between the external dielectric 1 and the internal dielectric 3 by the AC power source 5. The external dielectric 1 has a plasma ejecting opening 6 for ejecting the plasma to the outside.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for irradiating an object with plasmaized gas for cleaning and surface treatment.

[0002]

2. Description of the Related Art As a conventional apparatus for irradiating an object with plasmaized gas for surface treatment, the following apparatus has been known. 11A and 11B show a conventional atmospheric pressure plasma processing apparatus. FIG. 11A is a vertical sectional view of a box type apparatus, and FIG. 11B is a perspective view of a pipe type apparatus. The device shown in (a) has a structure in which a pair of dielectric plates 101 are arranged with a certain gap therebetween, and electrodes 102 are attached to the outer sides thereof, respectively. A high frequency power supply 103 is connected between the two electrodes 102. Air or another plasma generating gas is fed between the pair of dielectric plates 101 from above in the drawing. The gas is
Plasma is formed between the dielectric plates 101 by a high-voltage high-frequency electric field, and the plasma is irradiated onto the processing substrate 104 placed on the lower side of the drawing. The processing substrate 104 is a semiconductor wafer, an electric circuit board, or the like. Further, (b) has a structure in which the center electrode 107 is arranged on the shaft portion of the dielectric cylinder 106, and the external electrode 108 is arranged outside the dielectric cylinder 106. Center electrode 107 and outer electrode 1
A high frequency power supply 103 is connected between 08 and. As a result, plasma is generated between the center electrode 107 and the dielectric cylinder 106. Here, the gas turned into plasma is the processed substrate 104.
When irradiated with, the surface of a semiconductor wafer or electric circuit board is cleaned or modified.

[0003]

By the way, the above conventional techniques have the following problems to be solved. For example, an atmospheric pressure plasma processing apparatus as shown in FIG. 11A is widely adopted for processing semiconductor wafers having a diameter of about 10 cm or less. The apparatus as shown in FIG. 11 (b) is suitable for spot-like local substrate cleaning and line-shaped cleaning. However, each of the devices alone is not suitable for cleaning a large-area processing object such as a large-sized liquid crystal substrate. Therefore, in order to process a large substrate, a number of the above-mentioned devices are arranged and used. However, this increases the size of equipment and complicates wiring. In addition, if several devices are used side by side, it is not easy to equalize the conditions of all the devices, and the concentration of the gas turned into plasma varies depending on the location, so that uniform surface cleaning and surface treatment can be performed. There was a problem to be solved, which required advanced technology and careful adjustment.

[0004]

The present invention adopts the following constitution in order to solve the above points. <Structure 1> From an external dielectric body made of an insulating cylinder, an external electrode made of a conductor in close contact with the outer peripheral surface of the external dielectric body, and an insulating cylinder coaxially arranged inside the external dielectric body. And an internal electrode made of a conductor in close contact with the inner peripheral surface of the internal dielectric, a gas supply port for supplying gas between the external dielectric and the internal dielectric, and the external electrode. The external dielectric includes plasma generated between the external dielectric and the internal dielectric by the AC power supply, and the external dielectric is external to the external dielectric. A plasma processing apparatus comprising a plasma ejection port for ejecting the plasma onto the substrate.

<Structure 2> The plasma processing apparatus according to Structure 1, wherein the plasma processing apparatus is provided with a plurality of the gas supply ports.

<Structure 3> An outer dielectric body made of an insulating cylinder, an outer electrode made of a conductor closely attached to the outer peripheral surface of the outer dielectric body, and a conductor coaxially arranged inside the outer dielectric body. And an AC power supply connected between the external electrode and the internal electrode, and the external dielectric. A plasma processing apparatus, comprising: a plasma ejection port for ejecting plasma generated between the external dielectric and the internal electrode by the AC power supply to the outside of the external dielectric.

<Structure 4> A plasma processing apparatus according to Structure 3, wherein the plasma processing apparatus is provided with a plurality of the gas supply ports.

<Structure 5> In the plasma processing apparatus according to Structure 2 or 4, the ejection port is a mortar-shaped through hole that extends from the inner peripheral surface of the outer dielectric member toward the outer peripheral surface of the outer dielectric member. A plasma processing apparatus characterized in that there is.

<Structure 6> In the plasma processing apparatus according to Structure 2 or 4, the external electrode is provided at a position excluding the vicinity of the periphery of the plasma ejection port.

<Structure 7> A porous dielectric cylinder having open cells, an external electrode made of a conductor in close contact with the outer peripheral surface of the porous dielectric cylinder, and an inner peripheral surface of the porous dielectric cylinder. From an internal electrode made of a conductor in close contact with the gas supply port of the porous dielectric cylinder for supplying gas into the open cells, and an AC power source connected between the external electrode and the internal electrode. In the plasma processing apparatus, the porous dielectric and the outer conductor are provided with a plasma ejection port for ejecting the plasma generated in the continuous bubbles to the outside.

<Structure 8> A parallel plate made of an insulating material which is arranged in parallel while maintaining a predetermined distance, a flat electrode which is in close contact with the back surface of the opposite surface of the parallel plate, and a predetermined gas from the outside. A gas reservoir that receives and stores the gas and supplies this gas between the parallel plates, an AC power supply connected between the planar electrodes, and a plasma that ejects the plasma generated between the parallel plates by the AC power supply to the outside. A plasma processing apparatus comprising a jet port.

<Structure 9> The plasma processing apparatus according to Structure 8, wherein the ejection port is a mortar-shaped through hole that widens toward the outside for ejecting the plasma.

<Structure 10> In the plasma processing apparatus according to Structure 8, the jet outlet is a fan-shaped through hole that widens toward the outside for jetting the plasma.

<Structure 11> In the plasma processing apparatus according to structure 8, a porous dielectric having open cells is sandwiched between the parallel plates to generate plasma in the open cells. Plasma processing equipment. <Structure 12> The plasma processing apparatus according to Structure 8, wherein the plasma processing apparatus is provided with a plurality of mortar-shaped plasma ejection ports having different plasma ejection directions. <Structure 13> In the plasma processing apparatus according to Structure 8, a plurality of mortar-shaped plasma jet ports having different plasma jetting directions are provided, and the plasma jet ports have a slit shape with a predetermined length, and the plasma jet port has Different things
A plasma processing apparatus, wherein the plasma processing apparatus is arranged alternately in the longitudinal direction.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to specific examples. <Specific Example 1> FIG. 1 is a longitudinal sectional view of a main part of a plasma processing apparatus of a specific example 1. As shown in the figure, the plasma processing apparatus of Example 1 includes an outer dielectric body 1, an outer electrode 2, an inner dielectric body 3, an inner electrode 4, and an AC power supply 5.
Has a plasma ejection port 6 and a gas supply port 7. In the plasma processing apparatus of the specific example 1, the cylindrical internal dielectric 3 is arranged around the rod-shaped internal electrode 4. A cylindrical outer dielectric 1 is arranged on the outer side of the outer dielectric 1.
The external electrode 2 is arranged outside the. The internal electrode 4, the internal dielectric 3, the external dielectric 1 and the external electrode 2 are arranged coaxially with each other. The gas introduced from the gas supply port 7 provided in the external dielectric 1 is
And the external dielectric 1 flow. This gas is turned into plasma by an AC power source applied between the inner electrode 4 and the outer electrode 2. The plasmatized gas is ejected from a large number of ejection ports 6 provided in the external dielectric 1 and irradiated on the substrate 8 to be processed, and surface cleaning and surface treatment are performed.

The outer dielectric 1 and the inner dielectric 3 form a passage for the gas to be turned into plasma between them. The outer dielectric 1 and the inner dielectric 3 are composed of a cylinder of an insulator such as a quartz glass tube. The external electrode 2 is an electrode that excites a high-frequency high electric field in the gap between the external dielectric 1 and the internal dielectric 3 together with the internal electrode 4. The high-frequency high electric field causes the gas passing through the gap to be turned into plasma. The external electrode 2 and the internal electrode 4 are formed by closely contacting a conductor with the outer peripheral surface of the external dielectric 1. These electrodes are made of, for example, a metal thin film formed on the outer peripheral surface of the outer dielectric body 1 by a vacuum deposition method, an electroless plating method, or the like. In addition, for example, it is made of a metal foil attached to the outer peripheral surface of the external dielectric 1.
In this embodiment, the external electrode 2 is formed on a portion of the outer peripheral surface of the external dielectric 1 excluding the periphery of the plasma jet port 6.

The internal dielectric 3 is made of a cylinder of an insulating material such as a quartz glass tube covered with the outer peripheral surface of the internal electrode 4. The distance between the outer peripheral surface of the inner dielectric body 3 and the inner peripheral surface of the outer dielectric body 1 is an appropriate value required to secure a passage for the gas to be turned into plasma and to generate plasma in this gap. It is selected based on the conditions for forming a strong electric field.

The tube of the internal dielectric 3 may be covered so as to be tightly fitted around the internal electrode 4, or the internal dielectric 3 may be covered.
The metal rod-shaped internal electrode 4 having an appropriate size may be fitted in the pipe. Further, the internal electrode 4 may be formed on the inner peripheral surface of the pipe of the internal dielectric 3 by using electroless plating. In either case, it is preferable that air or the like does not exist around the internal electrode 4 or between the internal electrode 4 and the internal dielectric 3, so that it is preferable to seal both ends of the internal dielectric 3.

The AC power supply 5 is connected between the external electrode 2 and the internal electrode 4, and the external dielectric 1 and the internal dielectric 3 are connected.
The energy for generating the plasma is supplied between and. The power supply voltage and power supply frequency of the AC power supply are determined by the external dielectric 1
The optimum value is experimentally determined from the relationship between the inner circumference of the inner circumference of the inner circumference of the inner dielectric 3 and the outer circumference of the inner dielectric 3 and the type of gas used. For the AC power source, an optimum waveform such as SIN wave, rectangular wave, or triangular wave may be selected in each case.

The plasma ejection port 6 is provided to eject the plasma generated between the outer dielectric 1 and the inner dielectric 3 toward the substrate 8 to be processed. It is a through hole provided. The plasma is jetted so as to be pushed out from the plasma jet port 6 by the pressure of the gas supplied from the gas supply port 7. The gas supply port 7 is
It is an inlet for introducing gas into the gap between the inner dielectric 3 and the outer dielectric 1.

FIG. 2 shows the main parts of the device of FIG.
(A) is a perspective view showing a main part of the plasma processing apparatus in an enlarged and disassembled state, and (b) is an enlarged cross-sectional view of the plasma processing apparatus. As shown in FIG. 2A, the rod-shaped internal electrode 4 is inserted inside the internal dielectric body 3 so as to be in close contact therewith. Also, the inner dielectric 3 and the outer dielectric 1
And a constant gap for introducing plasma to generate plasma. The external electrode 2 is arranged so as to be in close contact with the outside of the external dielectric 1. The internal electrode 4, the internal dielectric 3, and the external dielectric 1 are coaxially supported by a support fitting (not shown).

As shown in FIG. 2B, the external electrode 2 is arranged so as to cover almost the entire outer circumference of the external dielectric 1. Further, a large number of plasma ejection ports 6 are arranged below the outer dielectric 1, and the outer electrode 2 is not provided in this peripheral portion. In order to maintain a stable plasma, as shown in the figure, a peripheral area of the plasma ejection port 6 is provided with a constant area and a buffer zone without the external electrode 2. This is to prevent a creeping discharge or the like at the portion of the plasma jet port 6. It is preferable that a gas having a spread as shown in the figure is ejected from the plasma ejection port 6. The reason for this and the configuration therefor will be described with reference to FIGS. 3 and 4.

FIG. 3 is a layout view of the plasma jet ports.
(A) shows an example in which a large number of plasma ejection ports are linearly provided at regular intervals, and (b) shows a plasma ejection direction when the plasma ejection ports are linearly provided. (C) shows an example in which the plasma ejection ports are arranged in a staggered pattern. As shown in (a), a large number of plasma ejection ports 6 are provided at regular intervals, so that the gas turned into plasma is irradiated to the strip-shaped region of the substrate 8 to be processed in a shower shape. (B) of the figure shows the state of the gas blown onto the substrate 8 to be processed in this shower shape. The optimum spraying state can be obtained by adjusting the overlap of the gas flows ejected from the adjacent plasma ejection ports 6, that is, by adjusting the interval, size and shape of the holes.

By this optimization, a substantially uniform amount of plasmaized gas is continuously sprayed on the entire surface of the substrate 8 to be processed. This enables uniform surface treatment of the substrate 8 to be treated. As shown in (c), if the plasma ejection ports 6 are arranged in a staggered pattern, the overlapping of the portions irradiated with the plasmatized gas as described above can be more finely adjusted, resulting in a more uniform treatment. Will be possible.

FIG. 4 is an explanatory view of the shape of the plasma ejection port. (a) is a longitudinal cross-sectional view of a portion of the outer dielectric body 1 where the plasma ejection port is arranged, (b) and (c) are diagrams showing an example of the shape of the plasma ejection port, and (d) is an apparatus. It is a schematic diagram showing how to use. As shown in (a), the plasma ejection port 6 is formed so as to spread in a mortar shape from the inner side to the outer side of the outer dielectric body 1, that is, from the upper side to the lower side.

If a mortar-shaped hole as shown in the perspective view is used in (b), it is possible to uniformly process a substrate having a large area. According to the experiment, it is suitable that the opening angle θ is in the range of 30 degrees to 90 degrees. Also (c)
As shown in FIG. 4, the fan-shaped slit-shaped plasma ejection port 6 with a flat bowl-shaped hole is suitable for processing a very narrow linear region on a specific substrate. in this way,
It is also possible to adjust the processing efficiency by narrowing or widening the gas direction.

With the structure described above, by making the apparatus shown in FIG. 1 sufficiently long in the lateral direction, it becomes possible to process an object such as a very wide substrate (eg, a liquid crystal substrate). Become. Specifically, an external dielectric body 1 having a diameter of about 12 mm and provided with plasma ejection ports 6 at a pitch of 10 mm was produced as a prototype. The total length is about 200 mm, and the air pressure between the outer dielectric 1 and the inner dielectric 3 is about 5 kg per square centimeter, and 50 liters per minute [50 (L / L
min)] air was sent.

Although air is used here to generate the plasma, argon gas, nitrogen gas, oxygen gas, hydrogen gas, or the like may be arbitrarily selected depending on the content of processing required for the substrate to be processed. In addition, the distance between the plasma ejection port 6 and the substrate to be processed is set to about 5 mm, and when focusing on one point on the substrate to be processed, a speed at which plasmaized gas is continuously irradiated for about 10 seconds. Then, the substrate to be processed was moved. When the wetting characteristics of the substrate before and after the treatment were measured, the supply air pressure was 2 (kg / cm ² ), and the flow rate was 50 (L /
min), irradiation time 10 sec, pre-irradiation contact angle 46
And 19 ° after irradiation. Moreover, almost the same improvements were seen in all parts. That is, uniform processing could be performed over the entire surface of the substrate.

If the length of the device is sufficiently long, a wider object can be processed. However, in that case, the gas pressure of the gas jetted onto the substrate 8 to be processed may be stronger when the gas pressure jetted is farther than the gas supply port. This causes uneven processing. Therefore, a plurality of gas supply ports 7 are provided (two are provided at both ends of the device in the figure), and gas of approximately the same pressure is supplied from each gas supply port 7 to make the internal gas pressure as uniform as possible. Is preferred. As a result, gas having a substantially equal pressure is ejected from any of the plasma ejection ports 6.

In the above description, the case where the plasma processing apparatus in which a pair of electrodes and the like are coaxially arranged is used has been described, but the present invention is not limited to this embodiment. That is, as shown in (d), the processing time can be shortened by arranging a plurality of plasma processing apparatuses 20 in parallel in the moving direction of the substrate 8 to be processed (direction of arrow 21). Further, as shown in (e), by using a plurality of plasma processing apparatuses 20 arranged in series, it is possible to process a wider substrate having a large area.

<Effects of Concrete Example 1> The following effects are obtained by adopting the configuration described above. 1. By arranging a large number of plasma ejection ports 6 side by side in a cylindrical body, a wide substrate to be processed can be uniformly processed. 2. At this time, by providing a plurality of gas supply ports 7, the pressure of the ejected plasma gas can be made uniform in the longitudinal direction, and uneven processing can be reduced. 3. Furthermore, since the substrate to be processed can be moved, not only the width of the substrate to be processed but also the length direction can be significantly lengthened. 4. Since plasma is generated between the external dielectric 1 and the internal dielectric 3, only the dielectric exists in the plasma generation part, and there is no metal dust that jumps out from the electrode, which enables stable plasma generation. Become. Therefore, metal powder or the like is not contained in the plasmatized gas with which the substrate to be processed is irradiated, and high-performance cleaning or surface treatment becomes possible. 5. As is common to the following embodiments, the structure is such that the electrodes are not exposed to the plasma atmosphere, and the electrodes are not plasma-sputtered.

<Specific Example 2> The plasma processing apparatus of Specific Example 2 is an example in which a part of the plasma processing apparatus of Specific Example 1 is modified. In the specific example 1, the internal dielectric is arranged around the internal electrode, but in the specific example 2, the internal dielectric is not provided and the internal electrode is exposed. The gas is made to flow through the gap between the body and the body. The details will be described below with reference to the drawings.

FIG. 5 is a vertical cross-sectional view of the main part of the plasma processing apparatus of the second specific example. As shown in the figure, the plasma processing apparatus of Example 1 comprises an outer dielectric 1, an outer electrode 2, an inner electrode 14, and an AC power supply 5. The outer dielectric 1 has a plasma jet port 6 and a gas supply port 7. Prepare

In the figure, the same parts as those in the concrete example 1 are designated by the same reference numerals as those in FIG. The internal electrode 14 is a rod-shaped conductor arranged concentrically inside the external dielectric 1. Gas to be turned into plasma flows through the gap between the outer dielectric 1 and the inner electrode 14. A metal rod or a metal cylinder is used for the internal electrode 14. Further, a metal thin film may be formed on the outer peripheral surface of the dielectric cylinder or rod by a vacuum deposition method or an electroless plating method, or a metal foil may be adhered to the outer peripheral surface of the dielectric cylinder or rod. But good. Other parts are specific example 1
The description is omitted because it is exactly the same as.

FIG. 2 shows the main parts of the device of FIG.
(A) is a perspective view showing a main part of the plasma processing apparatus in an enlarged and disassembled state, and (b) is an enlarged cross-sectional view of the plasma processing apparatus. As shown in (a), plasma is generated in the gap between the internal electrode 14 and the external dielectric 1 and gas is ejected from the plasma ejection port 6, so the distance between the internal electrode 14 and the external dielectric 1 is It is selected in consideration of this plasma generation condition. Other operations are the same as those in the first specific example.

<Effects of Specific Example 2> By adopting the configuration described above, the structure becomes simpler than that of the plasma processing apparatus shown in Specific Example 1, and the cost can be reduced.

<Embodiment 3> In order to eject plasma uniformly from a plurality of plasma ejection ports, in the plasma processing apparatus of Embodiment 3, the gas received from the gas supply port is once received in the gas reservoir. The gas is supplied to a portion that generates plasma through the gas reservoir, and then is injected from a gas ejection port.

FIG. 7 is a structural diagram of the plasma processing apparatus of the third specific example. (a) is a front view of an apparatus, (b) is an AA sectional view of an apparatus. As shown in the drawing, the plasma processing apparatus of Example 3 includes an AC power supply 5, a plasma injection port 6, a gas supply port 7, a parallel plate 21, a parallel electrode 22, and a gas reservoir 23.

The parallel plate 21 is made of an insulating material arranged in parallel while maintaining a predetermined distance. A rectangular quartz plate or the like is used. Gas is flowed between the plates to form a plasma. The predetermined interval is an interval at which stable plasma is maintained, and is determined in consideration of the voltage of the AC power supply 5.

The parallel electrode 22 is formed by closely adhering a conductor to the back surface of the facing surface of the parallel plate 21. For example, the metal thin film is formed by using a vacuum deposition method or an electroless plating method. Alternatively, a metal foil may be bonded to the outer peripheral surface of the outer dielectric 1. The plasma ejection port 6 is a plate having a large number of holes as shown in FIG. 3, and is fixed to the lower end of the parallel plate 21.

The gas reservoir 23 is a portion for receiving and storing a predetermined gas from the gas supply port 7 and supplying this gas between the parallel flat plates 21 at an equal pressure. This gas pool 23
It is formed so as to be continuous with the upper end of the parallel plate 21. When the gas pressurized to about several times the atmospheric pressure is supplied from the gas supply port 7, the gas pressure inside the gas reservoir 23 increases. Then, in any part of the gas reservoir 23 of the device, the gas pressure becomes almost constant. In this state, the gas is ejected from the plasma ejection port 6 through the space between the parallel flat plates 21 that are continuous with the gas reservoir 23. The gas is turned into plasma while passing between the parallel plates 21.

The distance from the portion of the gas reservoir 23 toward the plasma jet port 6 through the space between the parallel flat plates 21 is almost constant in all parts of the apparatus, so that the pressure of the gas jetted from the plasma jet port 6 is almost uniform. Become. As a result, it becomes possible to uniformly process a substrate having a large area. In the figure, the gas reservoir 23 has a triangular cross-sectional shape. If the sectional shape is a triangle, it is possible to easily and robustly manufacture three flat insulating plates by combining them. However,
The invention is not limited to this example. That is, the cross section of the gas reservoir 23 may be quadrangular or circular. In any of the embodiments, the plasma ejection port 6 is not necessarily a hole drilled, but may be slit-shaped.

<Effect of Concrete Example 3> By disposing the gas reservoir as described above, it is possible to reduce unevenness in the amount of the gas turned into plasma in the longitudinal direction of the apparatus. <Specific Example 4>

FIG. 8 is a cross-sectional view of the main part of the plasma generator of the fourth specific example. In Specific Example 4, a porous dielectric material having open cells was arranged in a portion where plasma was generated. In FIG. 1A, a porous dielectric material 30 having open cells is sandwiched between parallel flat plates 21. Further, in (b), the internal electrode 4
A porous dielectric material 31 having open cells was arranged between the outer electrode 2 and the outer electrode 2. Porous dielectric 30 sandwiched between parallel plates 21
It is preferable that the open cells are a large number of through holes that flow at least between the parallel flat plates 21 in the direction from the top of the drawing. The continuous cells of the porous dielectric material 31 sandwiched between the inner electrode 14 and the outer electrode 2 are preferably a large number of through holes that flow in both the axial direction and the radial direction of the tubular device. Air and various gases for plasma generation are introduced into the porous dielectric having open cells. In this device, the gas flowing through the porous dielectric having open cells is turned into plasma by the high frequency electric field. FIG. 9 is a cross-sectional view of a modified example of the plasma generator. As shown in (a) of the figure, the parallel electrodes 22 are arranged below the plates of the dielectrics 35 that face each other in parallel,
The porous dielectric 33 is sandwiched between them. Gas for plasma generation is supplied here through the gas supply hole 36. In addition, in FIG. 5B, parallel electrodes are formed on all sides of the plate of the dielectric 35.
22 is arranged, and the porous dielectric 33 is sandwiched below it. The gas supply hole 36 is a stopper such as Teflon (registered trademark).
It consists of a through hole in 37. Such a configuration may be used.

<Effect of Concrete Example 4> In the apparatus having this configuration,
Since the dielectric is arranged between the electrodes, there is an effect that the discharge is stabilized. In addition, since the potential gradient becomes non-uniform in the bubbles when viewed microscopically, discharge is likely to occur. For this reason, it is suitable for a mechanism in which new gas is sent in rapidly to quickly generate plasma and send it toward the plasma ejection port. Further, the gas pressure in the axial direction can be made uniform. <Fifth Embodiment> FIGS. 10A and 10B are still another modification of the plasma generator of the present invention. FIG. 10A is a cross sectional view thereof, and FIG. 10B is a bottom view thereof. As shown in (a) of the figure, a pair of mortar-shaped plasma ejection ports 6 were provided on the external dielectric 1 similar to that shown in FIG. These plasma ejection ports 6 are inclined outwardly and have different plasma ejection directions. As shown in (b) of the figure, the plasma ejection port 6 has a slit shape having a predetermined length, and those having different plasma ejection directions are alternately arranged in the longitudinal direction. <Effect of Concrete Example 5> By providing a plurality of mortar-shaped plasma ejection ports having different plasma ejection directions in this way, for example, surface treatment of a work having a curved surface becomes possible.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view of a main part of a plasma processing apparatus of Concrete Example 1.

FIG. 2 is an enlarged view of a main part of the configuration of specific example 1.

FIG. 3 is a layout view of plasma jet ports.

FIG. 4 is a diagram illustrating the shape of a plasma jet port.

FIG. 5 is a vertical cross-sectional view of main parts of a plasma processing apparatus of a second specific example.

FIG. 6 is an enlarged view of a main part of the configuration of specific example 2.

FIG. 7 is a structural diagram of a plasma processing apparatus of Concrete Example 3;

FIG. 8 is a horizontal cross-sectional view of a main part of a plasma generator according to a fourth specific example.

FIG. 9 is a transverse cross-sectional view of a modified example of the plasma generator of the fourth specific example.

FIG. 10 is still another modification of the plasma generator of the present invention, in which (a) is its cross-sectional view and (b) is a bottom view.

FIG. 11 shows a conventional atmospheric pressure plasma processing apparatus,
(A) is a vertical cross-sectional view of a box type device, and (b) is a perspective view of a pipe type device.

[Explanation of symbols]

1 External dielectric 2 external electrodes 3 Internal dielectric 4 internal electrodes 5 AC power supply 6 Plasma jet 7 gas supply port 8 Processed substrate

Claims (13)

[Claims] 1. An outer dielectric body made of an insulating body, an outer electrode made of a conductor in close contact with an outer peripheral surface of the outer dielectric body, and an insulating body arranged coaxially inside the outer dielectric body. And an internal electrode made of a conductor in close contact with the inner peripheral surface of the internal dielectric, a gas supply port for supplying a gas between the external dielectric and the internal dielectric, and the external electrode And an alternating current power supply connected between the inner electrode and the inner electrode, wherein the outer dielectric body generates plasma generated between the outer dielectric body and the inner dielectric body by the alternating current power supply from the outer dielectric body. A plasma processing apparatus comprising a plasma ejection port for ejecting to the outside. 2. The plasma processing apparatus according to claim 1, comprising a plurality of the gas supply ports. 3. An outer dielectric body made of an insulating cylinder, an outer electrode made of a conductor in close contact with an outer peripheral surface of the outer dielectric body, and an inner body made of a conductor coaxially arranged inside the outer dielectric body. An electrode, a gas supply port for supplying a gas between the external dielectric and the internal electrode, and an AC power supply connected between the external electrode and the internal electrode, the external dielectric, A plasma processing apparatus comprising: a plasma ejection port for ejecting plasma generated between the external dielectric and the internal electrode by the AC power supply to the outside of the external dielectric. 4. The plasma processing apparatus according to claim 3, comprising a plurality of the gas supply ports. 5. The plasma processing apparatus according to claim 2, wherein the ejection port is a mortar-shaped through hole that widens from the inner peripheral surface of the outer dielectric body toward the outer peripheral surface of the outer dielectric body. A plasma processing apparatus characterized by the above. 6. The plasma processing apparatus according to claim 2 or 4, wherein the external electrode is provided at a position excluding the vicinity of the periphery of the plasma ejection port. 7. A porous dielectric cylinder having open cells, an external electrode made of a conductor adhered to the outer peripheral surface of the porous dielectric cylinder, and an inner peripheral surface of the porous dielectric cylinder adhered to the outer peripheral surface. An internal electrode made of a conductor, a tube of the porous dielectric, a gas supply port for supplying gas into the continuous cells, and an AC power supply connected between the external electrode and the internal electrode, The plasma processing apparatus, wherein the porous dielectric and the outer conductor are provided with a plasma ejection port for ejecting the plasma generated in the continuous bubbles to the outside. 8. A parallel flat plate made of an insulator which is arranged in parallel with a predetermined distance maintained, a flat electrode closely attached to the back surface of the opposite surface of the parallel flat plate, and a predetermined gas from the outside. And a gas reservoir for supplying this gas between the parallel plates, an AC power supply connected between the plane electrodes, and a plasma ejection port for ejecting the plasma generated between the parallel plates by the AC power supply to the outside. A plasma processing apparatus comprising: 9. The plasma processing apparatus according to claim 8, wherein the ejection port is a mortar-shaped through hole that expands toward the outside for ejecting the plasma. 10. The plasma processing apparatus according to claim 8, wherein the ejection port is a fan-shaped through hole that expands toward the outside for ejecting the plasma. 11. The plasma processing apparatus according to claim 8, wherein a porous dielectric having open cells is sandwiched between the parallel plates, and plasma is generated in the open cells. Processing equipment. 12. The plasma processing apparatus according to claim 8, wherein the plasma processing apparatus is provided with a plurality of mortar-shaped plasma ejection ports having different plasma ejection directions. 13. The plasma processing apparatus according to claim 8, further comprising a plurality of mortar-shaped plasma ejection ports having different plasma ejection directions, each plasma ejection port having a slit shape with a predetermined length. A plasma processing apparatus in which objects having different directions are alternately arranged in the longitudinal direction.