JP2003068711A - Vacuum processor and vacuum processing method - Google Patents
Vacuum processor and vacuum processing methodInfo
- Publication number
- JP2003068711A JP2003068711A JP2001252894A JP2001252894A JP2003068711A JP 2003068711 A JP2003068711 A JP 2003068711A JP 2001252894 A JP2001252894 A JP 2001252894A JP 2001252894 A JP2001252894 A JP 2001252894A JP 2003068711 A JP2003068711 A JP 2003068711A
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- Prior art keywords
- vacuum processing
- processing chamber
- vacuum
- exhaust
- mounting table
- Prior art date
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ等の
被処理基板に対して真空処理を行う真空処理装置および
真空処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus and a vacuum processing method for performing vacuum processing on a substrate to be processed such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】例えば、半導体や液晶表示装置（ＬＣ
Ｄ）の製造工程においては、半導体ウエハやガラス基板
等の被処理基板に対して、ドライエッチングやスパッタ
リング、ＣＶＤ（化学気相成長）等の種々の真空処理が
施される。2. Description of the Related Art For example, semiconductors and liquid crystal display devices (LC
In the manufacturing process of D), various vacuum treatments such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) are performed on a substrate to be treated such as a semiconductor wafer and a glass substrate.
【０００３】図６は、半導体ウエハＷを被処理基板とし
て真空処理を行う真空処理装置の概略的な断面図であ
る。図６に示すように、真空処理装置は、気密に構成さ
れた真空処理室１０１と、この真空処理室１０１の底部
から立設され、その上に半導体ウエハＷが載置される載
置台１０２とを具備しており、また、真空処理室１０１
には排気口１０３が設けられており、この排気口１０３
には真空処理室１０１内のガスを排除するために真空ポ
ンプ等の排気機構１０４が接続されている。このような
構成において、装置構造上の都合、フットプリントおよ
び装置価格の観点から、排気口１０３は載置台１０２上
に載置された半導体ウエハＷ中心に対して非対称に、例
えば図６に示すように真空処理室１０１下方の片側一箇
所に設けられる。FIG. 6 is a schematic cross-sectional view of a vacuum processing apparatus which performs vacuum processing using a semiconductor wafer W as a substrate to be processed. As shown in FIG. 6, the vacuum processing apparatus includes an airtight vacuum processing chamber 101, and a mounting table 102 that is erected from the bottom of the vacuum processing chamber 101 and on which a semiconductor wafer W is mounted. In addition, the vacuum processing chamber 101
The exhaust port 103 is provided in the exhaust port 103.
An exhaust mechanism 104 such as a vacuum pump is connected to the vacuum processing chamber 101 in order to remove the gas in the vacuum processing chamber 101. In such a configuration, the exhaust port 103 is asymmetrical with respect to the center of the semiconductor wafer W mounted on the mounting table 102, for example, as shown in FIG. In addition, it is provided at one location on one side below the vacuum processing chamber 101.
【０００４】ところが、このように半導体ウエハＷ中心
に対して非対称に排気口１０３が設けられた真空処理装
置では、真空処理室１０１内の排気口１０３までの距離
が近い部分Ｂと、排気口１０３までの距離が遠い部分Ｃ
とで、ガスの流れ方が変化してしまう。具体的には、部
分Ｂの方が部分Ｃよりもガスの流れが速くなり、部分Ｃ
の方が部分Ｂよりもガスの圧力が高くなる。However, in the vacuum processing apparatus in which the exhaust port 103 is provided asymmetrically with respect to the center of the semiconductor wafer W as described above, the portion B in the vacuum processing chamber 101 which is close to the exhaust port 103 and the exhaust port 103. Distance C is far
And, the flow of gas changes. Specifically, the gas flow in the portion B becomes faster than that in the portion C.
In this case, the gas pressure becomes higher than that in the portion B.
【０００５】このようなガスの流れや圧力の不均一性
は、少なからずプロセスに悪影響を与えているものと考
えられ、特にガスを多量に流すプロセスほどその悪影響
は顕著になるものと考えられる。Such non-uniformity of gas flow and pressure is considered to have a considerable adverse effect on the process, and it is considered that the adverse effect becomes more remarkable especially in the process of flowing a large amount of gas.
【０００６】本発明は、このような事情に鑑みてなされ
たものであって、真空処理室を排気する際のガスの流れ
や圧力を均一にすることができ、被処理基板に面内均一
性の高い真空処理を施すことができる真空処理装置を提
供することを目的とする。The present invention has been made in view of the above circumstances, and it is possible to make the gas flow and pressure when the vacuum processing chamber is evacuated to be uniform, so that the in-plane uniformity of the substrate to be processed can be improved. An object of the present invention is to provide a vacuum processing apparatus capable of performing high-vacuum processing.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するた
め、本発明の第１の観点では、真空中で被処理基板に所
定の処理を施す真空処理室と、前記真空処理室内に設け
られ、被処理基板が載置される載置台と、前記真空処理
室の下部に、その中央から偏った位置に設けられた排気
口と、前記排気口に接続され、前記真空処理室の前記載
置台上方部分に形成される処理空間を前記載置台と前記
真空処理室の側壁とで規定される排気路を通って前記排
気口から排気する排気機構と、前記真空処理室の周辺部
に設けられた複数の圧力計と、前記排気機構によって前
記処理空間を排気する際に、前記複数の圧力計の測定値
が略均等になるように前記排気路の開口分布を調整する
開口調整部材とを具備することを特徴とする真空処理装
置を提供する。In order to solve the above-mentioned problems, according to a first aspect of the present invention, a vacuum processing chamber for performing a predetermined process on a substrate to be processed in a vacuum, and a vacuum processing chamber are provided in the vacuum processing chamber. A mounting table on which the substrate to be processed is mounted, an exhaust port provided in a lower portion of the vacuum processing chamber at a position deviated from the center thereof, and connected to the exhaust port, above the mounting table of the vacuum processing chamber. An exhaust mechanism for exhausting the processing space formed in the portion from the exhaust port through an exhaust passage defined by the mounting table and the side wall of the vacuum processing chamber, and a plurality of units provided in the peripheral portion of the vacuum processing chamber. Pressure gauge and an opening adjusting member that adjusts the opening distribution of the exhaust passage so that the measured values of the plurality of pressure gauges are substantially equal when the processing space is exhausted by the exhaust mechanism. A vacuum processing apparatus is provided.
【０００８】上記本発明の第１の観点によれば、前記処
理空間の周辺部に複数の圧力計を設け、前記排気機構に
よって前記処理空間を排気する際に、これら圧力計の測
定値が均等になるように開口調整部材によって前記排気
路の開口分布を調整するので、前記真空処理室の下部に
偏在した排気口から排気する方式でありながら、前記処
理空間の周辺部における圧力が均等な状態を維持しつつ
排気を行うことができる。したがって、真空処理室内の
ガスの流れや圧力を均一にして被処理基板に面内均一性
の高い真空処理を施すことが可能となる。According to the first aspect of the present invention, a plurality of pressure gauges are provided in the peripheral portion of the processing space, and when the processing space is exhausted by the exhaust mechanism, the measured values of these pressure gauges are equal. Since the opening distribution of the exhaust passage is adjusted by the opening adjusting member so that the pressure is uniform in the peripheral portion of the processing space even though it is a method of exhausting from the exhaust port unevenly distributed in the lower part of the vacuum processing chamber. The exhaust can be performed while maintaining the above. Therefore, it becomes possible to subject the substrate to be processed to vacuum processing with high in-plane uniformity by making the gas flow and pressure in the vacuum processing chamber uniform.
【０００９】さらに、本発明の第２の観点では、真空中
で被処理基板に所定の処理を施す真空処理室と、前記真
空処理室内に設けられ、被処理基板が載置される載置台
と、前記真空処理室の下部にその中央から偏った位置に
設けられた排気口と、前記排気口に接続され、前記真空
処理室の前記載置台上方部分に形成される処理空間を前
記載置台と前記真空処理室の側壁とで規定される排気路
を通って前記排気口から排気する排気機構と、前記真空
処理室の周辺部に設けられた複数の圧力計と、前記載置
台の周辺における前記排気路の開口分布を調整可能な開
口調整部材と、前記開口調整部材を駆動する駆動機構
と、前記排気機構によって前記処理空間を排気する際
に、前記複数の圧力計の測定値に応じて前記駆動機構を
制御する制御手段とを具備することを特徴とする真空処
理装置を提供する。Further, according to a second aspect of the present invention, a vacuum processing chamber for performing a predetermined process on a substrate to be processed in a vacuum, and a mounting table provided in the vacuum processing chamber and on which the substrate to be processed is placed. An exhaust port provided at a position offset from the center of the lower part of the vacuum processing chamber, and a processing space connected to the exhaust port and formed in an upper part of the mounting table of the vacuum processing chamber as the mounting table. An exhaust mechanism for exhausting from the exhaust port through an exhaust passage defined by a side wall of the vacuum processing chamber, a plurality of pressure gauges provided in a peripheral portion of the vacuum processing chamber, and the vicinity of the mounting table. An opening adjusting member that can adjust the opening distribution of the exhaust passage, a drive mechanism that drives the opening adjusting member, and when the processing space is exhausted by the exhaust mechanism, depending on the measured values of the plurality of pressure gauges, With the control means for controlling the drive mechanism To provide a vacuum processing apparatus, characterized by Bei.
【００１０】上記本発明の第２の観点によれば、前記処
理空間の周辺部に複数の圧力計を設け、前記排気機構で
前記処理空間を排気する際に、前記複数の圧力計の測定
値に応じて、開口調整部材を駆動する駆動機構を制御手
段で制御するので、前記圧力計の測定値に応じて前記排
気路の開口分布をリアルタイムで制御することができ、
これにより真空処理室内のガスの流れや圧力を均一にし
て被処理基板に面内均一性の高い真空処理を施すことが
可能となる。According to the second aspect of the present invention, a plurality of pressure gauges are provided in the peripheral portion of the processing space, and when the processing space is exhausted by the exhaust mechanism, the measured values of the plurality of pressure gauges are measured. According to, since the drive mechanism for driving the opening adjusting member is controlled by the control means, it is possible to control the opening distribution of the exhaust passage in real time according to the measurement value of the pressure gauge,
As a result, it becomes possible to make the gas flow and pressure in the vacuum processing chamber uniform and to subject the substrate to be processed to vacuum processing with high in-plane uniformity.
【００１１】上記第１および第２の観点のいずれの真空
処理装置においても、前記開口調整部材は、前記載置台
と前記真空処理室の側壁との間に水平移動可能に設けら
れ、その移動により前記排気路の開口分布を調整する構
成とすることができる。この場合に、前記圧力計は、少
なくとも前記排気口側および前記排気口と反対側との２
箇所に設けられ、前記開口調整部材は前記排気路の前記
排気口側とその反対側とに移動可能に設けられており、
その移動により前記排気路の前記排気口側の開口とその
反対側の開口とを調整することが好適である。また、前
記開口調整部材は、前記載置台と前記真空処理室の側壁
との間に設けられ、複数の孔部または複数のスリットが
形成されており、前記孔部または前記スリットを開閉す
ることにより前記排気路の開口分布を調整する構成とし
てもよい。In any of the first and second aspects of the vacuum processing apparatus, the opening adjusting member is provided so as to be horizontally movable between the mounting table and the side wall of the vacuum processing chamber. It is possible to adjust the opening distribution of the exhaust passage. In this case, the pressure gauge has at least the exhaust port side and the side opposite to the exhaust port.
Provided at a location, the opening adjusting member is movably provided on the exhaust port side of the exhaust passage and on the opposite side thereof,
It is preferable that the movement adjusts the opening on the exhaust port side and the opening on the opposite side of the exhaust path. Further, the opening adjusting member is provided between the mounting table and the side wall of the vacuum processing chamber, a plurality of holes or a plurality of slits are formed, by opening and closing the holes or the slits. A configuration may be used in which the opening distribution of the exhaust passage is adjusted.
【００１２】さらに、本発明の第３の観点では、真空処
理室と、前記真空処理室内に設けられ、被処理基板が載
置される載置台と、前記真空処理室の下部にその中央か
ら偏った位置に設けられた排気口と、前記排気口に接続
され、前記真空処理室の前記載置台上方部分に形成され
る処理空間を前記載置台と前記真空処理室の側壁とで規
定される排気路を通って前記排気口から排気して真空処
理を行う真空処理装置を用いて被処理基板に真空処理を
施す方法であって、前記載置台上に被処理基板を載置
し、前記処理空間を排気しつつ前記処理空間の周辺部の
複数箇所で圧力を測定し、前記複数箇所での圧力が略均
等になるように前記排気路の開口分布を調整して、前記
被処理基板に真空処理を施すことを特徴とする真空処理
方法を提供する。Further, according to a third aspect of the present invention, a vacuum processing chamber, a mounting table provided in the vacuum processing chamber and on which a substrate to be processed is mounted, and a lower part of the vacuum processing chamber, which is offset from the center thereof. An exhaust port provided at a different position, and a processing space that is connected to the exhaust port and that is formed above the mounting table of the vacuum processing chamber is defined by the mounting table and the side wall of the vacuum processing chamber. A method of performing vacuum processing on a substrate to be processed using a vacuum processing apparatus that performs vacuum processing by exhausting gas from the exhaust port through a passage, wherein the substrate to be processed is placed on a mounting table, and the processing space is While measuring the pressure at a plurality of locations in the peripheral portion of the processing space, adjusting the opening distribution of the exhaust passage so that the pressure at the plurality of locations is substantially equal, vacuum processing the substrate to be processed. The present invention provides a vacuum processing method, characterized in that
【００１３】上記本発明の第３の観点によれば、前記処
理空間を排気しつつ前記処理空間の周辺部の複数箇所で
圧力を測定し、前記複数箇所での圧力が略均等になるよ
うに前記排気路の開口分布を調整するので、真空処理室
内のガスの流れや圧力を均一にして被処理基板に面内均
一性の高い真空処理を施すことが可能となる。According to the third aspect of the present invention, the pressure is measured at a plurality of locations in the peripheral portion of the processing space while exhausting the processing space so that the pressures at the plurality of locations are substantially equal. Since the opening distribution of the exhaust path is adjusted, it is possible to make the gas flow and pressure in the vacuum processing chamber uniform and perform the vacuum processing with high in-plane uniformity on the substrate to be processed.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。図１は、本発明の一実施形態に係る真空処
理装置が適用されたプラズマエッチング装置の概略断面
図であり、図２は図１のＡ−Ａ断面矢視図、図３の
（ａ）および（ｂ）はこのプラズマエッチング装置にお
ける載置台の断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. FIG. 1 is a schematic sectional view of a plasma etching apparatus to which a vacuum processing apparatus according to an embodiment of the present invention is applied, and FIG. 2 is a sectional view taken along the line AA of FIG. 1 and FIG. (B) is a sectional view of a mounting table in this plasma etching apparatus.
【００１５】図１に示すように、このプラズマエッチン
グ装置は、例えば表面がアルマイト処理（陽極酸化処
理）されたアルミニウムからなり円筒状をなす真空処理
室１と、この真空処理室１の底部から立設され、ウエハ
Ｗが載置される略円柱状の載置台２とを有している。真
空処理室１内の載置台２上方には処理空間２０が形成さ
れており、この処理空間２０下方の載置台２周辺には、
載置台２と真空処理室１の側壁とで規定される排気路２
１が形成されている。また、真空処理容器１の下部に
は、その中央から偏った位置に排気口４が設けられてお
り、この排気口４には排気管５を介して真空ポンプ等の
排気機構６が接続されている。したがって、排気路２１
は、その上部で処理空間２０と連通しており、その下部
で排気口４を介して排気管５と連通している。一方、載
置台２には高周波電源１０が接続されており、これによ
り載置台２は下部電極として機能する。As shown in FIG. 1, this plasma etching apparatus has a cylindrical vacuum processing chamber 1 made of, for example, aluminum whose surface is anodized (anodized), and a vacuum processing chamber 1 standing upright from the bottom of the vacuum processing chamber 1. And a substantially cylindrical mounting table 2 on which the wafer W is mounted. A processing space 20 is formed above the mounting table 2 in the vacuum processing chamber 1, and around the mounting table 2 below the processing space 20.
Exhaust passage 2 defined by the mounting table 2 and the side wall of the vacuum processing chamber 1
1 is formed. Further, an exhaust port 4 is provided in a lower portion of the vacuum processing container 1 at a position deviated from the center thereof, and an exhaust mechanism 6 such as a vacuum pump is connected to the exhaust port 4 via an exhaust pipe 5. There is. Therefore, the exhaust passage 21
Communicates with the processing space 20 at its upper portion and communicates with the exhaust pipe 5 at its lower portion via the exhaust port 4. On the other hand, a high frequency power source 10 is connected to the mounting table 2, so that the mounting table 2 functions as a lower electrode.
【００１６】図２および図３に示すように、上記載置台
２の上部にはその周囲の全周にわたって溝２ａが水平に
形成されており、この溝２ａには、円環状のバッフル板
（開口調整部材）３が嵌め込まれている。このバッフル
板３は、駆動機構７で駆動することによって、真空処理
室１の排気口４側と排気口４の反対側とに水平移動可能
となっている。例えば、バッフル板３を排気口４の方向
に移動させた場合、載置台２の周辺における排気路２１
の開口分布は、排気口４側で小さくなるとともに排気口
４の反対側で大きくなる。図３の（ａ）にはバッフル板
３を中心位置とした状態を示し、図３の（ｂ）にはバッ
フル板３を排気口４側に移動させた状態を示す。このよ
うにして排気路２１の開口分布を変化させることによ
り、排気口４側とこれと反対側とのそれぞれの排気コン
ダクタンスを変化させることができ、これにより処理空
間２０内の圧力分布を調整することができる。例えば、
図３（ｂ）に示すようにバッフル板３を移動させた場合
には、排気口４側の排気コンダクタンスを減少させてそ
の部分の圧力を増大させるとともに、排気口４と反対側
の排気コンダクタンスを増大させてその部分の圧力を減
少させることができる。また、このようなバッフル板３
を上下に貫通する孔部を設けてもよい。As shown in FIGS. 2 and 3, a groove 2a is horizontally formed in the upper part of the above-mentioned mounting table 2 over the entire circumference thereof, and an annular baffle plate (opening) is formed in the groove 2a. Adjustment member 3 is fitted. The baffle plate 3 can be horizontally moved between the exhaust port 4 side of the vacuum processing chamber 1 and the opposite side of the exhaust port 4 by being driven by the drive mechanism 7. For example, when the baffle plate 3 is moved toward the exhaust port 4, the exhaust passage 21 around the mounting table 2
The opening distribution of is smaller on the exhaust port 4 side and is larger on the opposite side of the exhaust port 4. 3A shows a state in which the baffle plate 3 is at the center position, and FIG. 3B shows a state in which the baffle plate 3 is moved to the exhaust port 4 side. By changing the opening distribution of the exhaust passage 21 in this manner, it is possible to change the exhaust conductances of the exhaust port 4 side and the opposite side thereof, thereby adjusting the pressure distribution in the processing space 20. be able to. For example,
When the baffle plate 3 is moved as shown in FIG. 3B, the exhaust conductance on the exhaust port 4 side is reduced to increase the pressure at that portion, and the exhaust conductance on the side opposite to the exhaust port 4 is increased. It can be increased to reduce the pressure in that part. Also, such a baffle plate 3
You may provide the hole part which penetrates up and down.
【００１７】真空処理室１の上部には、処理空間２０を
挟んで載置台２と対向するように上部電極としてのシャ
ワーヘッド１１が設けられている。このシャワーヘッド
１１の下部は載置台２と平行に形成されており、その載
置台２と対向する部分には複数のガス吐出孔１２が設け
られている。また、シャワーヘッド１１の上部にはガス
導入口１３が形成されており、このガス導入口１３に
は、エッチングガスとして例えばＣＦ４ガス等のハロゲ
ン含有ガスやＨ２ガス等を導入するためのガス供給機構
１４が接続され、これら処理ガスがガス導入口１３を経
てシャワーヘッド１１の内部に至り、ガス吐出孔１２か
ら真空処理室１内に吐出される。A shower head 11 as an upper electrode is provided above the vacuum processing chamber 1 so as to face the mounting table 2 with the processing space 20 interposed therebetween. A lower portion of the shower head 11 is formed in parallel with the mounting table 2, and a plurality of gas discharge holes 12 are provided in a portion facing the mounting table 2. A gas introduction port 13 is formed in the upper portion of the shower head 11, and a gas for introducing a halogen-containing gas such as CF 4 gas or H 2 gas as an etching gas is formed in the gas introduction port 13. A supply mechanism 14 is connected, and these processing gases reach the inside of the shower head 11 through the gas introduction port 13 and are discharged into the vacuum processing chamber 1 through the gas discharge holes 12.
【００１８】また、このプラズマエッチング装置は、上
述したように載置台２の上方に形成された処理空間２０
周辺部の排気口４側およびこれと反対側の圧力を測定す
るための圧力計８および９を有しており、これらにより
排気機構６によって処理空間２０を減圧する際に、排気
口４側およびこれと反対側の圧力を個別に測定可能とな
っている。Further, this plasma etching apparatus has a processing space 20 formed above the mounting table 2 as described above.
The pressure gauges 8 and 9 for measuring the pressure on the side of the exhaust port 4 on the peripheral side and on the side opposite thereto are provided, and when the pressure of the processing space 20 is reduced by the exhaust mechanism 6 by these, The pressure on the opposite side can be measured individually.
【００１９】以上のような構成のプラズマエッチング装
置でウエハＷのエッチングを行う際には、まず、図示し
ないゲートバルブを開にしてウエハＷを真空処理室１内
に搬入し、載置台２上に載置する。次いで、ガス供給機
構１４から処理ガスの供給を開始してシャワーヘッド１
１から真空処理室１内に処理ガスを供給するとともに、
排気機構４を駆動して真空処理室１内を減圧する。この
減圧時に、圧力計８および９により処理空間２０周辺部
の排気口４側およびこれと反対側における圧力を測定し
つつ、圧力計８および９の測定値が略均等となるよう
に、駆動機構７によりバッフル板３を中央から移動させ
て排気路２１の開口分布を調整する。このようにバッフ
ル板３を所定の位置に移動させて排気路２１の開口分布
を調整するとともに真空処理室１内を所定の真空度に減
圧した後、高周波電源１０から載置台２に高周波電力を
供給して処理空間２０内に処理ガスのプラズマを発生さ
せ、このプラズマによりウエハＷ上に形成された所定の
膜をエッチングする。When the wafer W is etched by the plasma etching apparatus having the above structure, first, a gate valve (not shown) is opened to carry the wafer W into the vacuum processing chamber 1 and place it on the mounting table 2. Place it. Then, the shower head 1 is started by starting the supply of the processing gas from the gas supply mechanism 14.
While supplying the processing gas from 1 to the vacuum processing chamber 1,
The exhaust mechanism 4 is driven to reduce the pressure in the vacuum processing chamber 1. At the time of this depressurization, the pressure gauges 8 and 9 measure the pressures on the exhaust port 4 side and the opposite side of the peripheral portion of the processing space 20, and the drive mechanisms are arranged so that the measured values of the pressure gauges 8 and 9 become substantially equal. The baffle plate 3 is moved from the center by 7 to adjust the opening distribution of the exhaust passage 21. In this way, the baffle plate 3 is moved to a predetermined position to adjust the opening distribution of the exhaust passage 21 and the inside of the vacuum processing chamber 1 is depressurized to a predetermined degree of vacuum, and then high frequency power is supplied from the high frequency power supply 10 to the mounting table 2. The plasma of the processing gas is supplied to generate plasma of the processing gas, and a predetermined film formed on the wafer W is etched by the plasma.
【００２０】上記のプロセスにおいて、従来の装置で
は、真空処理室１内を減圧する際に処理空間２０の排気
口４側がこれと反対側よりも低圧になるという問題があ
った。これは、排気口４側の排気コンダクタンスがこれ
と反対側の排気コンダクタンスよりも大きいためであ
る。これに対して本実施形態では、減圧時に圧力計８お
よび９により処理空間２０周辺部の排気口４側およびこ
れと反対側の圧力を測定し、これらの測定値が略均等と
なるようにバッフル板３を移動させて排気路２１の開口
分布を調整してからウエハＷの処理を行うので、真空処
理室１内のガスの流れや圧力を均一にしてウエハＷに面
内均一性の高い処理を施すことができる。このような効
果は、特に、ガス供給機構１４からのガス供給量が多く
真空処理室１内を流れるガスの量が多く、排気口４側で
圧力が低くなりやすい場合に有効に発揮される。In the above process, the conventional apparatus has a problem that the pressure of the exhaust port 4 side of the processing space 20 becomes lower than that of the opposite side when depressurizing the inside of the vacuum processing chamber 1. This is because the exhaust conductance on the exhaust port 4 side is larger than the exhaust conductance on the opposite side. On the other hand, in the present embodiment, the pressure on the exhaust port 4 side of the peripheral portion of the processing space 20 and the pressure on the opposite side are measured by the pressure gauges 8 and 9 during depressurization, and the baffle is adjusted so that these measured values become substantially equal. Since the wafer W is processed after the plate 3 is moved to adjust the opening distribution of the exhaust passage 21, the gas flow and pressure in the vacuum processing chamber 1 are made uniform and the wafer W is processed with high in-plane uniformity. Can be applied. Such an effect is particularly effective when the gas supply amount from the gas supply mechanism 14 is large and the amount of gas flowing in the vacuum processing chamber 1 is large, and the pressure tends to be low on the exhaust port 4 side.
【００２１】また、ガス供給機構１４からのガス供給量
等のプロセス条件が同一の場合には、圧力計８および９
の測定値を略均等とするバッフル板３の位置は同じであ
ると考えられる。したがって、ある装置で所定のプロセ
ス条件の下で決定されたバッフル板３の位置データに基
づいて、同じプロセスを行う他の装置のバッフル板３の
位置を決定することも有効である。When the process conditions such as the gas supply amount from the gas supply mechanism 14 are the same, the pressure gauges 8 and 9 are used.
It is considered that the positions of the baffle plate 3 that make the measured values of 1) substantially equal are the same. Therefore, it is also effective to determine the position of the baffle plate 3 of another device performing the same process based on the position data of the baffle plate 3 determined by a certain device under a predetermined process condition.
【００２２】さらに、上記のプロセスでは、バッフル板
３を圧力計８および９の測定値が略均等となる位置に配
置してからウエハＷの処理を行ったが、例えば図４に示
すように、圧力計８および９の測定値に応じて駆動機構
７をリアルタイムで制御する制御手段１５を設け、排気
機構６による減圧時に圧力計８および９の測定値が略均
等となるようにバッフル板３の位置をリアルタイムで制
御するようにしてもよい。Further, in the above process, the wafer W is processed after the baffle plate 3 is arranged at a position where the measured values of the pressure gauges 8 and 9 are substantially equal, but, for example, as shown in FIG. A control means 15 for controlling the drive mechanism 7 in real time according to the measured values of the pressure gauges 8 and 9 is provided, and the baffle plate 3 of the baffle plate 3 is provided so that the measured values of the pressure gauges 8 and 9 become substantially equal when the pressure is reduced by the exhaust mechanism 6. The position may be controlled in real time.
【００２３】なお、本発明は上記実施の形態に限られ
ず、種々変更が可能である。例えば、上記実施形態では
バッフル板３を水平移動することによって排気路２１の
開口分布を調節するようにしたが、図５の（ａ）〜
（ｄ）に示すように、孔部２３を複数設けたバッフル板
３′を用い、このバッフル板３′の下面側に孔部２３の
それぞれと連通可能な孔部２５が形成された部材２４を
配置し、この部材２４を水平移動させて孔部２３および
孔部２５の位置関係を調節することにより孔部２３のそ
れぞれを開閉又は開度制御するようにしてもよい。図５
の（ａ）および（ｂ）は孔部２５と孔部２３とを連通さ
せて孔部２３を全開にした状態の上面図および縦断面図
であり、図５の（ｃ）および（ｄ）は孔部２３を孔部２
５からずれた位置として孔部２３を半開にした状態の上
面図および縦断面図である。また、孔部ではなくスリッ
トを設けて、孔部の場合と同様に開閉又は開度制御する
ようにしてもよい。また、上記実施形態では本発明をプ
ラズマエッチング装置に適用した場合を示したが、本発
明はスパッタリング、ＣＶＤ（化学気相成長）等の種々
の真空処理装置に適用することができる。さらに、被処
理基板はウエハＷに限られず、例えばＬＣＤ用のガラス
基板であってもよい。The present invention is not limited to the above embodiment, but various modifications can be made. For example, in the above-described embodiment, the baffle plate 3 is horizontally moved to adjust the opening distribution of the exhaust passage 21, but FIG.
As shown in (d), using a baffle plate 3'provided with a plurality of holes 23, a member 24 having holes 25 that can communicate with each of the holes 23 is formed on the lower surface side of the baffle plate 3 '. Alternatively, the members 24 may be horizontally moved and the positional relationship between the holes 23 and the holes 25 may be adjusted to open / close or control the opening of each of the holes 23. Figure 5
5 (a) and 5 (b) are a top view and a vertical cross-sectional view showing a state in which the hole portion 25 and the hole portion 23 are communicated with each other and the hole portion 23 is fully opened, and (c) and (d) of FIG. Hole 23 to hole 2
5A and 5B are a top view and a vertical cross-sectional view showing a state in which the hole 23 is half-opened at a position deviated from 5. Further, a slit may be provided instead of the hole, and the opening / closing or the opening degree may be controlled similarly to the case of the hole. Further, although the case where the present invention is applied to the plasma etching apparatus has been shown in the above-described embodiments, the present invention can be applied to various vacuum processing apparatuses such as sputtering and CVD (chemical vapor deposition). Further, the substrate to be processed is not limited to the wafer W and may be a glass substrate for LCD, for example.
【００２４】[0024]
【発明の効果】以上説明したように、本発明によれば、
前記処理空間の周辺部に複数の圧力計を設け、前記排気
機構によって前記処理空間を排気する際に、これら圧力
計の測定値が均等になるように開口調整部材によって前
記排気路の開口分布を調整するので、前記真空処理室の
下部に偏在した排気口から排気する方式でありながら、
前記処理空間の周辺部における圧力が均等な状態を維持
しつつ排気を行うことができる。したがって、真空処理
室内のガスの流れや圧力を均一にして被処理基板に面内
均一性の高い真空処理を施すことが可能となる。As described above, according to the present invention,
A plurality of pressure gauges are provided in the peripheral portion of the processing space, and when the processing space is evacuated by the exhaust mechanism, the opening distribution of the exhaust passage is adjusted by the opening adjusting member so that the measured values of these pressure gauges become uniform. Since it is adjusted, while exhausting from the exhaust port unevenly distributed in the lower part of the vacuum processing chamber,
Exhaust can be performed while maintaining a uniform pressure in the peripheral portion of the processing space. Therefore, it becomes possible to subject the substrate to be processed to vacuum processing with high in-plane uniformity by making the gas flow and pressure in the vacuum processing chamber uniform.
【図１】本発明の第１の実施形態に係るプラズマエッチ
ング装置の断面図。FIG. 1 is a sectional view of a plasma etching apparatus according to a first embodiment of the present invention.
【図２】図１のＡ−Ａ断面図。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】図１における載置台およびバッフル板の説明
図。FIG. 3 is an explanatory view of a mounting table and a baffle plate in FIG.
【図４】駆動機構をリアルタイムで制御する制御手段を
設けたプラズマエッチング装置の断面図。FIG. 4 is a cross-sectional view of a plasma etching apparatus provided with control means for controlling a drive mechanism in real time.
【図５】本発明の変形例におけるバッフル板の一部を示
す図面。FIG. 5 is a view showing a part of a baffle plate according to a modified example of the present invention.
【図６】従来の真空処理装置の一例を模式的に示す断面
図。FIG. 6 is a sectional view schematically showing an example of a conventional vacuum processing apparatus.
１；真空処理室 ２；載置台 ２ａ；溝 ３；バッフル板 ４；排気口 ５；排気管 ６；排気機構 ７；駆動機構 ８，９；圧力計 １０；高周波電源 １１；シャワーヘッド １２；ガス吐出孔 １３；ガス導入口 １４；ガス供給機構 １５；制御手段 ２０；処理空間 ２１；排気路 １０１；真空処理室 １０２；載置台 １０３；排気口 １０４；排気機構 Ｗ；半導体ウエハ 1; Vacuum processing chamber 2; Mounting table 2a; groove 3; Baffle board 4; exhaust port 5; Exhaust pipe 6; Exhaust mechanism 7: Drive mechanism 8, 9; pressure gauge 10; high frequency power supply 11; shower head 12; Gas discharge hole 13; Gas inlet 14; Gas supply mechanism 15; Control means 20; Processing space 21; exhaust path 101; Vacuum processing chamber 102; mounting table 103; exhaust port 104; Exhaust mechanism W: Semiconductor wafer
Claims (6)
真空処理室と、 前記真空処理室内に設けられ、被処理基板が載置される
載置台と、 前記真空処理室の下部に、その中央から偏った位置に設
けられた排気口と、 前記排気口に接続され、前記真空処理室の前記載置台上
方部分に形成される処理空間を前記載置台と前記真空処
理室の側壁とで規定される排気路を通って前記排気口か
ら排気する排気機構と、 前記真空処理室の周辺部に設けられた複数の圧力計と、 前記排気機構によって前記処理空間を排気する際に、前
記複数の圧力計の測定値が略均等になるように前記排気
路の開口分布を調整する開口調整部材とを具備すること
を特徴とする真空処理装置。1. A vacuum processing chamber for performing a predetermined process on a substrate to be processed in a vacuum, a mounting table provided in the vacuum processing chamber for mounting a substrate to be processed, and below the vacuum processing chamber, An exhaust port provided at a position deviated from the center, a processing space connected to the exhaust port and formed in an upper portion of the mounting table of the vacuum processing chamber is defined by the mounting table and the side wall of the vacuum processing chamber. An exhaust mechanism for exhausting from the exhaust port through a defined exhaust path, a plurality of pressure gauges provided in the peripheral portion of the vacuum processing chamber, and a plurality of pressure gauges for exhausting the processing space by the exhaust mechanism. And an opening adjusting member that adjusts the opening distribution of the exhaust passage so that the measured values of the pressure gauge are substantially equal.
真空処理室と、 前記真空処理室内に設けられ、被処理基板が載置される
載置台と、 前記真空処理室の下部にその中央から偏った位置に設け
られた排気口と、 前記排気口に接続され、前記真空処理室の前記載置台上
方部分に形成される処理空間を前記載置台と前記真空処
理室の側壁とで規定される排気路を通って前記排気口か
ら排気する排気機構と、 前記真空処理室の周辺部に設けられた複数の圧力計と、 前記載置台の周辺における前記排気路の開口分布を調整
可能な開口調整部材と、 前記開口調整部材を駆動する駆動機構と、 前記排気機構によって前記処理空間を排気する際に、前
記複数の圧力計の測定値に応じて前記駆動機構を制御す
る制御手段とを具備することを特徴とする真空処理装
置。2. A vacuum processing chamber for performing a predetermined process on a substrate to be processed in a vacuum, a mounting table provided in the vacuum processing chamber and on which the substrate to be processed is mounted, and a mounting table provided below the vacuum processing chamber. An exhaust port provided at a position deviated from the center, and a processing space connected to the exhaust port and formed in an upper portion of the vacuum processing chamber above the mounting table is defined by the mounting table and a side wall of the vacuum processing chamber. An exhaust mechanism for exhausting from the exhaust port through the exhaust passage, a plurality of pressure gauges provided in the peripheral portion of the vacuum processing chamber, and the opening distribution of the exhaust passage around the mounting table can be adjusted. An opening adjustment member, a drive mechanism that drives the opening adjustment member, and a control unit that controls the drive mechanism according to the measured values of the plurality of pressure gauges when the processing space is exhausted by the exhaust mechanism. True to have Processing apparatus.
真空処理室の側壁との間に水平移動可能に設けられ、そ
の移動により前記排気路の開口分布を調整することを特
徴とする請求項１または請求項２に記載の真空処置装
置。3. The opening adjustment member is provided so as to be horizontally movable between the mounting table and the side wall of the vacuum processing chamber, and the movement adjusts the opening distribution of the exhaust passage. The vacuum treatment apparatus according to claim 1 or 2.
および前記排気口と反対側との２箇所に設けられ、前記
開口調整部材は前記排気路の前記排気口側とその反対側
とに移動可能に設けられており、その移動により前記排
気路の前記排気口側の開口とその反対側の開口とを調整
することを特徴とする請求項３に記載の真空処理装置。4. The pressure gauge is provided at least at two positions, that is, at the exhaust port side and at the side opposite to the exhaust port, and the opening adjusting member moves to the exhaust port side of the exhaust passage and the opposite side thereof. The vacuum processing apparatus according to claim 3, wherein the vacuum processing apparatus is provided so as to be capable of adjusting the opening of the exhaust passage on the exhaust port side and the opening on the opposite side of the exhaust passage by movement thereof.
真空処理室の側壁との間に設けられ、複数の孔部または
複数のスリットが形成されており、前記孔部または前記
スリットを開閉することにより前記排気路の開口分布を
調整することを特徴とする請求項１または請求項２に記
載の真空処理装置。5. The opening adjusting member is provided between the mounting table and a side wall of the vacuum processing chamber, and has a plurality of holes or a plurality of slits, and the holes or the slits are opened and closed. The vacuum processing apparatus according to claim 1 or 2, wherein the opening distribution of the exhaust passage is adjusted by doing so.
られ、被処理基板が載置される載置台と、前記真空処理
室の下部にその中央から偏った位置に設けられた排気口
と、前記排気口に接続され、前記真空処理室の前記載置
台上方部分に形成される処理空間を前記載置台と前記真
空処理室の側壁とで規定される排気路を通って前記排気
口から排気して真空処理を行う真空処理装置を用いて被
処理基板に真空処理を施す方法であって、 前記載置台上に被処理基板を載置し、前記処理空間を排
気しつつ、前記処理空間の周辺部の複数箇所で圧力を測
定し、前記複数箇所での圧力が略均等になるように前記
排気路の開口分布を調整して、前記被処理基板に真空処
理を施すことを特徴とする真空処理方法。6. A vacuum processing chamber, a mounting table provided in the vacuum processing chamber, on which a substrate to be processed is mounted, and an exhaust port provided at a position lower than the center of the vacuum processing chamber. Exhausting a processing space connected to the exhaust port and formed in an upper portion of the mounting table of the vacuum processing chamber from an exhaust port through an exhaust passage defined by the mounting table and a side wall of the vacuum processing chamber. A method of performing vacuum processing on a substrate to be processed using a vacuum processing apparatus for performing vacuum processing, comprising: placing the substrate to be processed on a mounting table, exhausting the processing space; A vacuum characterized in that the pressure is measured at a plurality of locations on the peripheral portion, the opening distribution of the exhaust passage is adjusted so that the pressures at the plurality of locations are substantially equal, and a vacuum process is performed on the substrate to be processed. Processing method.
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|---|---|---|---|
| JP2001252894A JP4731760B2 (en) | 2001-08-23 | 2001-08-23 | Vacuum processing apparatus and vacuum processing method |
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| Publication Number | Publication Date |
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| JP2007533138A (en) * | 2004-04-08 | 2007-11-15 | アプライド マテリアルズ インコーポレイテッド | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| US7648578B1 (en) | 2004-06-15 | 2010-01-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and method for manufacturing semiconductor device |
| JP2010514216A (en) * | 2006-12-20 | 2010-04-30 | ラム リサーチ コーポレーション | Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber |
| US20120024479A1 (en) * | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| WO2013106949A1 (en) * | 2012-01-18 | 2013-07-25 | 清华大学 | Variable structured vacuum chamber for internal rarefied airflow simulation checking and pressure detection |
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| JP2020033627A (en) * | 2018-08-31 | 2020-03-05 | キヤノントッキ株式会社 | Film deposition apparatus, film deposition method and method for manufacturing electronic device |
| CN111378944A (en) * | 2018-12-27 | 2020-07-07 | 佳能特机株式会社 | Film forming apparatus, film forming method, and method for manufacturing electronic device |
| CN116288279A (en) * | 2023-05-23 | 2023-06-23 | 中微半导体设备(上海)股份有限公司 | Vapor deposition device and substrate processing method |
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| JP2007533138A (en) * | 2004-04-08 | 2007-11-15 | アプライド マテリアルズ インコーポレイテッド | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| US7648578B1 (en) | 2004-06-15 | 2010-01-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and method for manufacturing semiconductor device |
| JP2007194361A (en) * | 2006-01-18 | 2007-08-02 | Tokyo Electron Ltd | Plasma treatment equipment and controlling method of the same |
| JP2010514216A (en) * | 2006-12-20 | 2010-04-30 | ラム リサーチ コーポレーション | Apparatus and method for gas flow conductance control in a capacitively coupled plasma process chamber |
| US8784948B2 (en) | 2006-12-20 | 2014-07-22 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
| US20120024479A1 (en) * | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US9443753B2 (en) * | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| WO2013106949A1 (en) * | 2012-01-18 | 2013-07-25 | 清华大学 | Variable structured vacuum chamber for internal rarefied airflow simulation checking and pressure detection |
| JPWO2015151570A1 (en) * | 2014-03-31 | 2017-04-13 | Ｓｐｐテクノロジーズ株式会社 | Plasma processing equipment |
| CN109072429A (en) * | 2016-04-05 | 2018-12-21 | 艾克斯特朗欧洲公司 | Exhaust manifold in chemical vapour deposition reactor furnace |
| JP2020033627A (en) * | 2018-08-31 | 2020-03-05 | キヤノントッキ株式会社 | Film deposition apparatus, film deposition method and method for manufacturing electronic device |
| JP7202815B2 (en) | 2018-08-31 | 2023-01-12 | キヤノントッキ株式会社 | Film forming apparatus, film forming method, and electronic device manufacturing method |
| CN111378944A (en) * | 2018-12-27 | 2020-07-07 | 佳能特机株式会社 | Film forming apparatus, film forming method, and method for manufacturing electronic device |
| JP2020105570A (en) * | 2018-12-27 | 2020-07-09 | キヤノントッキ株式会社 | Film deposition apparatus, film deposition method, and method of manufacturing electronic device |
| JP7229016B2 (en) | 2018-12-27 | 2023-02-27 | キヤノントッキ株式会社 | Film forming apparatus, film forming method, and electronic device manufacturing method |
| CN116288279A (en) * | 2023-05-23 | 2023-06-23 | 中微半导体设备(上海)股份有限公司 | Vapor deposition device and substrate processing method |
| CN116288279B (en) * | 2023-05-23 | 2023-08-18 | 中微半导体设备(上海)股份有限公司 | Vapor deposition device and substrate processing method |
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