JP2003051469A - Slurry composition for cmp, patterning method, and semiconductor device - Google Patents
Slurry composition for cmp, patterning method, and semiconductor deviceInfo
- Publication number
- JP2003051469A JP2003051469A JP2002190234A JP2002190234A JP2003051469A JP 2003051469 A JP2003051469 A JP 2003051469A JP 2002190234 A JP2002190234 A JP 2002190234A JP 2002190234 A JP2002190234 A JP 2002190234A JP 2003051469 A JP2003051469 A JP 2003051469A
- Authority
- JP
- Japan
- Prior art keywords
- slurry composition
- cmp
- slurry
- nitride film
- phosphoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造工程の
うち化学的機械的研磨（Chemical Mechanical Polishin
g：以下、ＣＭＰと記す）工程に用いられるスラリー（s
lurry）組成物に関し、より詳しくは、シリコン酸化膜
（ＳｉＯ：以下、酸化膜と記す）に対し、より高い選択
比を有するシリコン窒化膜（ＳｉＮ）又はシリコン酸化
窒化膜（ＳｉＯＮ）（以下、シリコン窒化膜とシリコン
酸化窒化膜を通称、窒化膜と記す）が先に研磨される窒
化膜に好適なＣＭＰ用スラリー組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing process in a semiconductor manufacturing process.
g: Slurry (s) used in the step CMP)
lurry) composition, more specifically, a silicon nitride film (SiN) or a silicon oxynitride film (SiON) (hereinafter, silicon) having a higher selection ratio with respect to a silicon oxide film (SiO: hereinafter referred to as an oxide film). The present invention relates to a slurry composition for CMP suitable for a nitride film in which a nitride film and a silicon oxynitride film (commonly referred to as a nitride film) are first polished.
【０００２】[0002]
【従来の技術】現在のところ、半導体製造工程において
微細パターンを形成するための方法に関心が集中するに
伴い、チップとウェーハの表面領域の凹凸に対する広域
平坦化技術の重要性がクローズアップされ始めた。前記
の広域平坦化技術の１つであるＣＭＰ工程は、半導体素
子の製造時に用いるリソグラフィー（lithography）を
円滑にするため導入された工程の一種であり、１９８０
年末米国のＩＢＭ社で化学的除去加工と機械的研磨方式
を混合して開発した。2. Description of the Related Art At present, as the interest in a method for forming a fine pattern in a semiconductor manufacturing process is increasing, the importance of a wide area planarization technique for the unevenness of the surface area of a chip and a wafer is beginning to be highlighted. It was The CMP process, which is one of the wide area planarization techniques described above, is one of the processes introduced in order to facilitate the lithography used in the manufacture of semiconductor devices.
It was developed at the end of the year by IBM in the United States by mixing chemical removal processing and mechanical polishing methods.
【０００３】前記ＣＭＰ工程は、半導体素子が次第に微
細化、高密度化及び多層構造を有するに伴い、ウェーハ
の研磨速度とスラリーに含まれる化学物質を調節して特
定部位だけを除去することにより、既存の全面エッチン
グ工程では成すことができなかった平坦化をもたらす技
術である。より詳しくは、ＣＭＰ用スラリー中の加工物
と反応性の良好な化学物質を利用して化学的に物質を除
去するとともに、超微粒研磨材がウェーハ表面を機械的
に除去加工するものであり、ウェーハ全面と回転する弾
性パッドとの間に液状のスラリーを投入する方法で研磨
する。In the CMP process, as a semiconductor device is gradually miniaturized, densified and has a multi-layer structure, a polishing rate of a wafer and a chemical substance contained in a slurry are adjusted to remove only a specific portion. This is a technique that brings about a planarization that could not be achieved by the existing whole surface etching process. More specifically, the chemical substance is chemically removed using a chemical substance having a good reactivity with the workpiece in the CMP slurry, and the ultrafine abrasive material mechanically removes the wafer surface. Polishing is performed by introducing a liquid slurry between the entire surface of the wafer and the rotating elastic pad.
【０００４】[0004]
【発明が解決しようとする課題】前記ＣＭＰ工程は、現
在メモリ半導体６４Ｍ以上及び非メモリ半導体２５０Ｍ
Ｈｚ以上で高密度、高集積化のための必須の要素であ
る。現在一般に用いるＣＭＰ用スラリーは酸化膜ＣＭＰ
用スラリーであり、酸化膜が窒化膜より２倍以上速く研
磨される特性があるので、窒化膜をエッチング防止膜
（stopping layer）に用いて酸化膜を研磨する。前記酸
化膜ＣＭＰ用スラリーは、窒化膜／酸化膜の選択比が
０.５以下である。しかし、従来、酸化膜ＣＭＰ用スラ
リーをダマシン金属ゲート工程に利用して窒化膜を研磨
する場合は、酸化膜の研磨速度が窒化膜に比べて速いた
め、層間絶縁膜（interlayer dielectric layer）に用
いる酸化膜のディッシング（dishing）現象が甚だしく
発生するので、後続するフォトリソグラフィー又はエッ
チング工程に良くない影響を及ぼし、ＣＭＰ工程を利用
したバリヤー窒化膜の膜形成が不可能になる。したがっ
て、基板が酸化膜でパターニングされた状態で蒸着され
た窒化膜を、従来の酸化膜ＣＭＰ用スラリーを利用して
研磨する工程は不可能である。The CMP process is currently performed in the memory semiconductors of 64M or more and the non-memory semiconductors of 250M or more.
It is an essential element for high density and high integration at Hz or higher. Currently used CMP slurries are oxide film CMP
Since it is a slurry for use in polishing and has a characteristic that an oxide film is polished more than twice as fast as a nitride film, the oxide film is polished by using the nitride film as an etching stop layer. The oxide film CMP slurry has a nitride film / oxide film selection ratio of 0.5 or less. However, conventionally, when a nitride film is polished by using a slurry for oxide film CMP in a damascene metal gate process, since the polishing rate of the oxide film is higher than that of the nitride film, it is used as an interlayer dielectric layer. Since the dishing phenomenon of the oxide film is seriously generated, it adversely affects the subsequent photolithography or etching process and makes it impossible to form the barrier nitride film using the CMP process. Therefore, it is impossible to polish the nitride film deposited in the state where the substrate is patterned with the oxide film by using the conventional oxide film CMP slurry.
【０００５】本発明の目的は、（窒化膜／酸化膜）＞１
のエッチング選択比を有するＣＭＰ用スラリー組成物
と、この組成物を利用したＣＭＰ方法を利用したパター
ニング方法、この方法で得られる半導体素子を提供する
ことにある。An object of the present invention is (nitride film / oxide film)> 1
The present invention provides a CMP slurry composition having an etching selection ratio of 1., a patterning method using a CMP method using this composition, and a semiconductor device obtained by this method.
【０００６】[0006]
【課題を解決するための手段】本発明では、リン酸を利
用してスラリーのｐＨを変化させ酸化膜と窒化膜の研磨
速度に差を誘発させることにより、酸化膜に対し、より
高い選択比を有する窒化膜に好適なＣＭＰ用スラリー組
成物を提供する。In the present invention, phosphoric acid is used to change the pH of the slurry to induce a difference in the polishing rate between the oxide film and the nitride film, so that a higher selectivity ratio is obtained for the oxide film. Provided is a CMP slurry composition suitable for a nitride film having:
【０００７】請求項１に記載の発明は、研磨材（abrasi
ve）及びリン酸を含むことを特徴とするＣＭＰ用スラリ
ー組成物である。The invention according to claim 1 is an abrasive material (abrasi).
ve) and phosphoric acid are contained in the slurry composition for CMP.
【０００８】請求項２に記載の発明は、請求項１に記載
のＣＭＰ用スラリー組成物において、全体のｐＨは１〜
５であることを特徴とする。請求項３に記載の発明は、
請求項１に記載のＣＭＰ用スラリー組成物において、全
体のｐＨは１〜３であることを特徴とする。請求項４に
記載の発明は、請求項１に記載のＣＭＰ用スラリー組成
物において、全体のｐＨは１〜２であることを特徴とす
る。According to a second aspect of the present invention, in the CMP slurry composition according to the first aspect, the total pH is 1 to 1.
It is characterized by being 5. The invention according to claim 3 is
The slurry composition for CMP according to claim 1 has a pH of 1 to 3 as a whole. The invention according to claim 4 is the slurry composition for CMP according to claim 1, wherein the entire pH is 1 to 2.
【０００９】請求項５に記載の発明は、請求項１に記載
のＣＭＰ用スラリー組成物において、総重量に対し、リ
ン酸が０．００４〜２０ｗｔ％含まれていることを特徴
とする。請求項６に記載の発明は、請求項１に記載のＣ
ＭＰ用スラリー組成物において、総重量に対し、リン酸
が０．２〜１０ｗｔ％が含まれていることを特徴とす
る。請求項７に記載の発明は、請求項１に記載のＣＭＰ
用スラリー組成物において、総重量に対し、リン酸が
０．５〜５ｗｔ％が含まれていることを特徴とする。A fifth aspect of the present invention is characterized in that the CMP slurry composition according to the first aspect contains phosphoric acid in an amount of 0.004 to 20 wt% with respect to the total weight. The invention according to claim 6 is the C according to claim 1.
The slurry composition for MP is characterized by containing 0.2 to 10 wt% of phosphoric acid with respect to the total weight. The invention according to claim 7 is the CMP according to claim 1.
The slurry composition is characterized in that it contains 0.5 to 5 wt% of phosphoric acid based on the total weight.
【００１０】請求項８に記載の発明は、請求項１に記載
のＣＭＰ用スラリー組成物において、前記研磨材は、酸
化セリウム（ＣｅＯ2）、酸化マンガン（ＭｎＯ2）、ジ
ルコニア（ＺｒＯ2）、アルミナ（Ａｌ2Ｏ3）、シリカ
（ＳｉＯ2）及びこれらの混合物でなる群から選択され
ていることを特徴とする。The invention according to claim 8 is the slurry composition for CMP according to claim 1, wherein the abrasive is cerium oxide (CeO 2 ), manganese oxide (MnO 2 ), zirconia (ZrO 2 ), It is characterized in that it is selected from the group consisting of alumina (Al 2 O 3 ), silica (SiO 2 ) and mixtures thereof.
【００１１】請求項９に記載の発明は、請求項１に記載
のＣＭＰ用スラリー組成物において、前記研磨材は、総
重量に対し０．１〜２０ｗｔ％の比率で含まれているこ
とを特徴とする。請求項１０に記載の発明は、請求項１
に記載のＣＭＰ用スラリー組成物において、前記研磨材
は、粒子の大きさが１００ｎｍ〜５００ｎｍであること
を特徴とする。請求項１１に記載の発明は、請求項１に
記載のＣＭＰ用スラリー組成物において、前記研磨材
は、コロイド及びヒュームド形態であることを特徴とす
る。The invention according to claim 9 is the slurry composition for CMP according to claim 1, characterized in that the abrasive is contained in a proportion of 0.1 to 20 wt% with respect to the total weight. And The invention described in claim 10 is claim 1
In the slurry composition for CMP described in (1), the abrasive has a particle size of 100 nm to 500 nm. The invention according to claim 11 is the slurry composition for CMP according to claim 1, wherein the abrasive is in the form of colloid or fumed.
【００１２】請求項１２に記載の発明は、請求項１に記
載のＣＭＰ用スラリー組成物において、緩衝溶液をさら
に含むことを特徴とする。請求項１３に記載の発明は、
請求項１２に記載のＣＭＰ用スラリー組成物において、
前記緩衝溶液は、ヒドロキシル基（−ＯＨ）を含む化合
物であることを特徴とする。The twelfth aspect of the invention is characterized in that the CMP slurry composition according to the first aspect further comprises a buffer solution. The invention according to claim 13 is
The slurry composition for CMP according to claim 12,
The buffer solution is a compound containing a hydroxyl group (—OH).
【００１３】請求項１４に記載の発明は、ＣＭＰ用スラ
リー組成物において、総重量に対しリン酸０．００４〜
２０ｗｔ％をさらに含むことを特徴とするＣＭＰ用スラ
リー組成物である。請求項１５に記載の発明は、請求項
１４に記載のＣＭＰ用スラリー組成物において、全体の
ｐＨは１〜５であることを特徴とする。According to a fourteenth aspect of the present invention, in the slurry composition for CMP, the phosphoric acid is added in an amount of 0.004 to 0.004 to the total weight.
It is a slurry composition for CMP, which further contains 20 wt%. The invention described in claim 15 is the slurry composition for CMP according to claim 14, wherein the entire pH is 1 to 5.
【００１４】請求項１６に記載の発明は、（ａ）シリコ
ン系の窒化膜が形成された半導体基板を用意する段階、
及び（ｂ）請求項１〜１５のいずれかに記載のＣＭＰ用
スラリー組成物を利用し、前記シリコン系の窒化膜をＣ
ＭＰ工程でパターニングする段階を含むことを特徴とす
るパターニング方法である。ここで、「シリコン系の窒
化膜」とは、シリコン窒化膜（ＳｉＮ）及びシリコン酸
化窒化膜（ＳｉＯＮ）の少なくともいずれか一方であ
り、両方形成されていてもよい。According to a sixteenth aspect of the present invention, (a) a step of preparing a semiconductor substrate having a silicon nitride film formed thereon,
And (b) using the slurry composition for CMP according to any one of claims 1 to 15, the silicon-based nitride film is C
It is a patterning method including a step of patterning in an MP process. Here, the “silicon nitride film” is at least one of a silicon nitride film (SiN) and a silicon oxynitride film (SiON), and both may be formed.
【００１５】請求項１７に記載の発明は、請求項１６に
記載のパターニング方法において、前記シリコン系の窒
化膜の下部にシリコン酸化膜を形成する段階をさらに含
むことを特徴とする。請求項１８に記載の発明は、請求
項１６に記載のパターニング方法において、前記方法
は、ダマシン工程又はＳＡＣ工程で採用されることを特
徴とする。According to a seventeenth aspect of the present invention, in the patterning method according to the sixteenth aspect, the method further comprises the step of forming a silicon oxide film under the silicon-based nitride film. The invention described in claim 18 is the patterning method according to claim 16, wherein the method is adopted in a damascene process or a SAC process.
【００１６】請求項１９に記載の発明は、請求項１６〜
１８のいずれかに記載のパターニング方法を用いて得ら
れたことを特徴とする半導体素子である。The invention according to claim 19 relates to claims 16 to 16.
18. A semiconductor element obtained by using the patterning method according to any one of 18 above.
【００１７】[0017]
【発明の実施の形態】以下、本発明に対し詳しく説明す
る。本発明では、研磨材とリン酸を含んで、酸化膜と比
較して窒化膜に対してより高い選択比を有するＣＭＰ用
スラリー組成物を提供する。このとき、スラリー組成物
全体のｐＨは１〜５、好ましくはｐＨ１〜３、より好ま
しくはｐＨ１〜２になるようにする。前記ＣＭＰ用スラ
リー組成物に含まれる研磨材の量は、スラリーの総重量
に対し０.１〜２０ｗｔ％、リン酸（Ｈ3ＰＯ4）はスラ
リーの総重量に対し０.００４〜２０ｗｔ％、好ましく
は０.２〜１０ｗｔ％、より好ましくは０．５〜５ｗｔ
％を添加する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below. The present invention provides a slurry composition for CMP which contains an abrasive and phosphoric acid and has a higher selection ratio with respect to a nitride film as compared with an oxide film. At this time, the pH of the entire slurry composition is adjusted to 1 to 5, preferably pH 1 to 3, and more preferably pH 1 to 2. The amount of the abrasive contained in the slurry composition for CMP is 0.1 to 20 wt% with respect to the total weight of the slurry, and phosphoric acid (H 3 PO 4 ) is 0.004 to 20 wt% with respect to the total weight of the slurry. Preferably 0.2-10 wt%, more preferably 0.5-5 wt
% Is added.
【００１８】前記スラリーに含まれる研磨材の量がスラ
リーの総重量に対し０.１ｗｔ％以下の場合は研磨速度
が一定の水準に及ばず、２０ｗｔ％を超過する場合は機
械的な要因によりスクラッチ等の欠陥が誘発され、ま
た、スラリーのコストを高めるという欠点がある。さら
に、リン酸は酸化膜に比べて窒化膜をより速く研磨する
特性を有するので、リン酸を添加して窒化膜のエッチン
グ選択比を高める。前記スラリーにリン酸を添加したと
きのｐＨは１〜５、好ましくはｐＨ１〜３、より好まし
くはｐＨ１〜２になるように維持し、このときのｐＨは
ヒドロキシル基（−ＯＨ）を有する緩衝溶液を用いて調
節することができる。When the amount of abrasive contained in the slurry is less than 0.1 wt% of the total weight of the slurry, the polishing rate does not reach a certain level, and when it exceeds 20 wt%, scratches are caused by mechanical factors. However, there are drawbacks such that defects such as the above are induced and the cost of the slurry is increased. Furthermore, since phosphoric acid has the property of polishing the nitride film faster than the oxide film, phosphoric acid is added to increase the etching selectivity of the nitride film. The pH when the phosphoric acid is added to the slurry is maintained at 1 to 5, preferably pH 1 to 3, more preferably pH 1 to 2, and the pH at this time is a buffer solution having a hydroxyl group (-OH). Can be adjusted using.
【００１９】前記リン酸の量がスラリーの総重量に対し
０．００４ｗｔ％以下の場合、望むｐＨを得ることがで
きないだけでなくリン酸による化学的な反応が発生せ
ず、２０ｗｔ％を超過する非常に多量のリン酸が添加さ
れると化学的な要因が大きく作用することになり、ＣＭ
Ｐ工程でないエッチング工程の性格を表して平坦化に良
くない影響を及ぼす。When the amount of the phosphoric acid is less than 0.004 wt% with respect to the total weight of the slurry, not only the desired pH cannot be obtained, but also a chemical reaction due to phosphoric acid does not occur, which exceeds 20 wt%. When a very large amount of phosphoric acid is added, the chemical factors have a large effect, and CM
It represents the nature of the etching process that is not the P process and adversely affects the planarization.
【００２０】前記スラリー組成物に添加される研磨材に
は通常の研磨材を利用するが、例えば、酸化セリウム
（ＣｅＯ2）、酸化マンガン（ＭｎＯ2）、ジルコニア
（ＺｒＯ 2）、アルミナ（Ａｌ2Ｏ3）又はシリカ（Ｓｉ
Ｏ2）等を含むものであれば何れも使用可能であり、好
ましくは酸化セリウム（ＣｅＯ2）が含まれた研磨材を
用いる。このときの研磨材の粒子の大きさは一般に１０
０ｎｍ〜５００ｎｍの大きさであり、コロイド（colloi
dal）形態又はヒュームド（fumed）形態に製造するのが
好ましい。前記研磨材の粒子が１００ｎｍ未満であまり
小さければ研磨速度が低下して生産性の側面で好ましく
なく、平均粒子の大きさが５００ｎｍを超過すれば分散
が難しくスクラッチを誘発するためである。In the abrasive added to the slurry composition
Uses ordinary abrasives, for example, cerium oxide
(CeO2), Manganese oxide (MnO2), Zirconia
(ZrO 2), Alumina (Al2O3) Or silica (Si
O2) Etc. can be used, and
More preferably cerium oxide (CeO2) Contained abrasive
To use. At this time, the particle size of the abrasive is generally 10 or less.
The size is 0 nm to 500 nm, and colloid
dal or fumed form
preferable. If the abrasive particles are less than 100 nm,
If it is small, the polishing rate will decrease, which is preferable in terms of productivity.
If the average particle size exceeds 500 nm, it will be dispersed.
This is because it is difficult to induce scratches.
【００２１】前記のような方法で製造されたスラリー組
成物は、ダマシン金属ゲート（Damascene Metal Gate）
形成工程又はキャパシターコンタクトの形成のためのサ
ック（Self Aligned Contact：以下、ＳＡＣと記す）工
程で、層間絶縁膜に用いられた酸化膜をエッチング停止
膜にし、窒化膜をＣＭＰ法によりパターニングする工程
に適用することができる。さらに、前記研磨する窒化膜
を化学気相蒸着法（Chemical Vapor Deposition：以
下、ＣＶＤと記す）で蒸着し、本発明のスラリー組成物
を利用してＣＭＰ工程を行う場合は窒化膜に対するエッ
チング選択比をさらに高めることができる。The slurry composition produced by the above-mentioned method has a damascene metal gate.
In the process of forming or in the process of forming a capacitor contact (Self Aligned Contact: hereinafter referred to as SAC), the oxide film used as the interlayer insulating film is used as an etching stop film, and the nitride film is patterned by the CMP method. Can be applied. Furthermore, when the nitride film to be polished is deposited by a chemical vapor deposition (Chemical Vapor Deposition: hereinafter referred to as CVD) and the CMP process is performed using the slurry composition of the present invention, the etching selectivity to the nitride film is increased. Can be further increased.
【００２２】本発明は、さらに本発明のスラリー組成物
を利用してシリコン窒化膜（ＳｉＮ）又はシリコン酸化
窒化膜（ＳｉＯＮ）をＣＭＰ工程でパターニングする方
法、特に、ダマシン金属ゲート工程及びキャパシター形
成時のＳＡＣ工程に適用する方法を提供する。前記シリ
コン窒化膜又はシリコン酸化窒化膜の下部には、エッチ
ング停止膜の機能を果たすシリコン酸化膜が形成されて
いる。The present invention further uses the slurry composition of the present invention to pattern a silicon nitride film (SiN) or a silicon oxynitride film (SiON) by a CMP process, especially when a damascene metal gate process and a capacitor are formed. A method applied to the SAC process of A silicon oxide film that functions as an etching stopper film is formed under the silicon nitride film or the silicon oxynitride film.
【００２３】[0023]
【実施例】以下、本発明を実施例に基づき詳しく説明す
る。本発明では、以下のようにして、酸化セリウム（Ｃ
ｅＯ2）研磨材が含まれているＨＳ−８００５−Ａ９
（日立化成工業株式会社（Hitachi Chemical Co.,Lt
d.）製）ＣＭＰ用スラリーに脱イオン水（deionized wa
ter）とリン酸を添加して実験に必要な本発明に係るス
ラリー組成物を製造した。EXAMPLES The present invention will be described in detail below based on examples. In the present invention, cerium oxide (C
eO 2 ) HS-8005-A9 containing abrasives
(Hitachi Chemical Co., Lt
d.) CMP slurry with deionized water
ter) and phosphoric acid were added to prepare a slurry composition according to the present invention required for the experiment.
【００２４】まず、比較例１でリン酸の添加前のスラリ
ー組成物を製造した。
比較例１．５ｗｔ％の酸化セリウム（ＣｅＯ2）研磨材
が含まれているＨＳ−８００５−Ａ９（同上）ＣＭＰ用
スラリーに脱イオン水を添加して希釈させ、スラリー総
重量に対し酸化セリウムが１ｗｔ％のＣＭＰ用スラリー
１０Ｌを製造した。このときｐＨは８.１９である（図
１参照）。First, in Comparative Example 1, a slurry composition before addition of phosphoric acid was manufactured. Comparative Example A HS-8005-A9 (same as above) CMP slurry containing 1.5 wt% cerium oxide (CeO 2 ) abrasive was diluted by adding deionized water, and cerium oxide was added to the total weight of the slurry. 10 L of 1 wt% CMP slurry was manufactured. At this time, the pH is 8.19 (see FIG. 1).
【００２５】次に、実験例１〜６で比較例１で製造した
スラリー組成物にリン酸を所定量ずつ加え、本発明のス
ラリー組成物を製造した。図１には、リン酸の添加量と
ｐHの関係を示した。
実験例１．前記比較例１で製造したスラリーに、スラリ
ー総重量に対しリン酸０．００４ｗｔ％含まれるように
添加した。このとき、ｐＨは５．００である（図１参
照）。
実験例２．前記比較例１で製造したスラリーに、リン酸
を添加し、本発明のスラリー組成物を得た。このとき、
リン酸はスラリー組成物の総重量に対し０．０２ｗｔ％
含まれている。また、このときのｐＨは３．００である
（図１参照）。
実験例３．前記比較例１で製造したスラリーに、リン酸
を添加し、本発明のスラリー組成物を得た。このとき、
リン酸はスラリー組成物の総重量に対し０．２０ｗｔ％
含まれている。また、このとき、ｐＨは１．９７である
（図１参照）。
実験例４．前記比較例１で製造したスラリーに、リン酸
を添加し、本発明のスラリー組成物を得た。このとき、
リン酸はスラリー組成物の総重量に対し０．５０ｗｔ％
含まれている。また、このとき、ｐＨは１．８６である
（図１参照）。
実験例５．前記比較例１で製造したスラリーに、リン酸
を添加し、本発明のスラリー組成物を得た。このとき、
リン酸はスラリー組成物の総重量に対し１．００ｗｔ％
含まれている。また、このとき、ｐＨは１．６７である
（図１参照）。
実験例６．前記比較例１で製造したスラリーに、リン酸
を添加し、本発明のスラリー組成物を得た。このとき、
リン酸はスラリー組成物の総重量に対し５．００ｗｔ％
含まれている。また、このとき、ｐＨは１．１８である
（図１参照）。Next, phosphoric acid was added to the slurry compositions prepared in Comparative Example 1 in Experimental Examples 1 to 6 in predetermined amounts to prepare the slurry compositions of the present invention. FIG. 1 shows the relationship between the added amount of phosphoric acid and pH. Experimental example 1. Phosphoric acid was added to the slurry prepared in Comparative Example 1 so that the phosphoric acid contained 0.004 wt% of the total weight of the slurry. At this time, the pH is 5.00 (see FIG. 1). Experimental example 2. Phosphoric acid was added to the slurry produced in Comparative Example 1 to obtain a slurry composition of the present invention. At this time,
Phosphoric acid is 0.02 wt% with respect to the total weight of the slurry composition
include. The pH at this time is 3.00 (see FIG. 1). Experimental example 3. Phosphoric acid was added to the slurry produced in Comparative Example 1 to obtain a slurry composition of the present invention. At this time,
Phosphoric acid is 0.20 wt% with respect to the total weight of the slurry composition
include. At this time, the pH is 1.97 (see FIG. 1). Experimental example 4. Phosphoric acid was added to the slurry produced in Comparative Example 1 to obtain a slurry composition of the present invention. At this time,
Phosphoric acid is 0.50 wt% with respect to the total weight of the slurry composition
include. At this time, the pH is 1.86 (see FIG. 1). Experimental example 5. Phosphoric acid was added to the slurry produced in Comparative Example 1 to obtain a slurry composition of the present invention. At this time,
Phosphoric acid is 1.00 wt% based on the total weight of the slurry composition
include. At this time, the pH is 1.67 (see FIG. 1). Experimental example 6. Phosphoric acid was added to the slurry produced in Comparative Example 1 to obtain a slurry composition of the present invention. At this time,
Phosphoric acid is 5.00 wt% based on the total weight of the slurry composition
include. At this time, the pH is 1.18 (see FIG. 1).
【００２６】実験例７．前記比較例１及び実験例１〜５
で製造した各々のスラリー組成物を高密度プラズマ（Hi
gh Density Plasma：以下、ＨＤＰと記す）酸化膜又は
ドーピングされていないシリケートグラス（Undoped Si
licate Glass：以下、ＵＳＧと記す）酸化膜等の酸化膜
と、プラズマ強化（Plasma Enhanced：ＰＥ）窒化膜又
は低圧力（Low Pressure：ＬＰ）窒化膜等の窒化膜を利
用し、ＣＭＰ工程で窒化膜／酸化膜の研磨選択比を求め
た。このとき、研磨条件はヘッド圧力（head pressur
e）３ｐｓｉとテーブル回転数（table rpm）７０rpmで
あった。その結果、ＬＰＮ／ＨＤＰを用いた場合はリン
酸０．５０ｗｔ％以上、即ち、ｐＨ１．８６以下で窒化
膜／酸化膜研磨選択比が１以上の値を表しており、ＰＥ
Ｎ／ＨＤＰを用いた場合はリン酸が０．００４ｗｔ％、
即ち、ｐＨ５であるとき選択比が１を表しており、ｐＨ
２以下の場合は選択比は２に近い値を得ることができた
（図２参照）。すなわち前記結果に基づき本発明のＣＭ
Ｐスラリーを利用すれば、窒化膜が酸化膜より一層速く
研磨される。図２にその結果をグラフで示した。図２
で、ＰＥＮはプラズマ向上化学気相蒸着法（Plasma Enh
anced Chemical Vapor Deposition）で製造した窒化膜
であり、ＬＰNは低圧力熱化学気相蒸着法（Low Pressur
e Thermal Chemical Vapor Deposition）で製造した窒
化膜であり、ＨＤＰは高密度プラズマ酸化膜（High Den
sity Plasma Oxide）であり、ＵＳＧはドーピングされ
ていないシリケートグラス酸化膜（Undoped Silicate G
lass Oxide）である。また、「３／７０」は、ヘッド圧力
３ｐｓｉ／テーブル回転数７０ｒｐｍの意味である。Experimental Example 7. Comparative Example 1 and Experimental Examples 1 to 5
High density plasma (Hi
gh Density Plasma: Hereinafter referred to as HDP) oxide film or undoped silicate glass (Undoped Si)
licate glass: hereinafter referred to as USG) An oxide film such as an oxide film and a nitride film such as a plasma enhanced (PE) nitride film or a low pressure (LP) nitride film are used to perform nitriding in a CMP process. The polishing selection ratio of the film / oxide film was determined. At this time, the polishing conditions are head pressure (head pressur
e) 3 psi and table rpm 70 rpm. As a result, when LPN / HDP was used, the phosphoric acid 0.50 wt% or more, that is, the pH of 1.86 or less, the nitride / oxide polishing selectivity was 1 or more.
When N / HDP is used, phosphoric acid is 0.004 wt%,
That is, when the pH is 5, the selection ratio represents 1,
When it was 2 or less, the selection ratio could be close to 2 (see FIG. 2). That is, the CM of the present invention is based on the above results.
If P slurry is used, the nitride film is polished faster than the oxide film. The results are shown graphically in FIG. Figure 2
PEN is a plasma-enhanced chemical vapor deposition (Plasma Enh
LPN is a nitride film manufactured by Assisted Chemical Vapor Deposition). LPN is a low pressure thermal chemical vapor deposition method (Low Pressur
It is a nitride film manufactured by e Thermal Chemical Vapor Deposition, and HDP is a high density plasma oxide film (High Density
sity Plasma Oxide), USG is an undoped Silicate glass oxide film.
lass Oxide). Further, “3/70” means a head pressure of 3 psi / table rotation speed of 70 rpm.
【００２７】[0027]
【発明の効果】上述のように、本発明はスラリーのｐＨ
を変化させて酸化膜の研磨速度を減少させ、窒化膜の研
磨速度を増加させて酸化膜が先に研磨されることを防
ぎ、高密度、高集積化を達成する半導体素子を製造する
ことができる窒化膜に対し、高い選択比を有する窒化膜
ＣＭＰ用スラリーを提供する。As described above, according to the present invention, the pH of the slurry is
To reduce the polishing rate of the oxide film, increase the polishing rate of the nitride film to prevent the oxide film from being polished first, and manufacture a semiconductor device that achieves high density and high integration. A slurry for nitride film CMP having a high selection ratio with respect to a nitride film that can be formed.
【図１】リン酸（Ｈ3ＰＯ4）の重量比に伴うスラリーの
ｐＨ変化を示す図面である。FIG. 1 is a diagram showing a pH change of a slurry according to a weight ratio of phosphoric acid (H 3 PO 4 ).
【図２】スラリーのｐＨの変化に伴う窒化膜／酸化膜の
選択比を示す図面である。FIG. 2 is a view showing a selection ratio of a nitride film / oxide film according to a change in pH of a slurry.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C047 GG20 5F043 AA37 BB23 DD16 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3C047 GG20 5F043 AA37 BB23 DD16
Claims (19)
ＣＭＰ用スラリー組成物。1. A slurry composition for CMP comprising an abrasive and phosphoric acid.
る請求項１に記載のＣＭＰ用スラリー組成物。2. The slurry composition for CMP according to claim 1, wherein the total pH is 1 to 5.
る請求項１に記載のＣＭＰ用スラリー組成物。3. The slurry composition for CMP according to claim 1, wherein the entire pH is 1 to 3.
る請求項１に記載のＣＭＰ用スラリー組成物。4. The slurry composition for CMP according to claim 1, wherein the total pH is 1 to 2.
ｗｔ％含まれていることを特徴とする請求項１に記載の
ＣＭＰ用スラリー組成物。5. A phosphoric acid content of 0.004 to 20 relative to the total weight.
The slurry composition for CMP according to claim 1, wherein the slurry composition is contained in an amount of wt%.
％が含まれていることを特徴とする請求項１に記載のＣ
ＭＰ用スラリー組成物。6. Phosphoric acid is 0.2 to 10 wt% based on the total weight.
% According to claim 1, characterized in that C is included.
MP slurry composition.
含まれていることを特徴とする請求項１に記載のＣＭＰ
用スラリー組成物。7. The CMP according to claim 1, wherein 0.5 to 5 wt% of phosphoric acid is contained in the total weight.
Slurry composition.
Ｏ2）、酸化マンガン（ＭｎＯ2）、ジルコニア（ＺｒＯ
2）、アルミナ（Ａｌ2Ｏ3）、シリカ（ＳｉＯ2）及びこ
れらの混合物でなる群から選択されていることを特徴と
する請求項１に記載のＣＭＰ用スラリー組成物。8. The abrasive is cerium oxide (Ce
O 2 ), manganese oxide (MnO 2 ), zirconia (ZrO
The slurry composition for CMP according to claim 1, wherein the slurry composition is selected from the group consisting of 2 ), alumina (Al 2 O 3 ), silica (SiO 2 ) and mixtures thereof.
ｗｔ％の比率で含まれていることを特徴とする請求項１
に記載のＣＭＰ用スラリー組成物。9. The abrasive has a total weight of 0.1 to 20.
2. The composition is contained in a wt% ratio.
The slurry composition for CMP according to item 1.
ｍ〜５００ｎｍであることを特徴とする請求項１に記載
のＣＭＰ用スラリー組成物。10. The abrasive has a particle size of 100 n.
It is m-500 nm, The slurry composition for CMP of Claim 1 characterized by the above-mentioned.
形態であることを特徴とする請求項１に記載のＣＭＰ用
スラリー組成物。11. The slurry composition for CMP according to claim 1, wherein the abrasive is in the form of colloid or fumed.
請求項１に記載のＣＭＰ用スラリー組成物。12. The slurry composition for CMP according to claim 1, further comprising a buffer solution.
Ｈ）を含む化合物であることを特徴とする請求項１２に
記載のＣＭＰ用スラリー組成物。13. The buffer solution comprises a hydroxyl group (—O).
It is a compound containing H), The slurry composition for CMP of Claim 12 characterized by the above-mentioned.
量に対しリン酸０．００４〜２０ｗｔ％をさらに含むこ
とを特徴とするＣＭＰ用スラリー組成物。14. A slurry composition for CMP, further comprising 0.004 to 20 wt% of phosphoric acid based on the total weight.
する請求項１４に記載のＣＭＰ用スラリー組成物。15. The slurry composition for CMP according to claim 14, wherein the total pH is 1 to 5.
半導体基板を用意する段階、及び（ｂ）請求項１〜１５
のいずれかに記載のＣＭＰ用スラリー組成物を利用し、
前記シリコン系の窒化膜をＣＭＰ工程でパターニングす
る段階を含むことを特徴とするパターニング方法。16. A step of (a) preparing a semiconductor substrate having a silicon nitride film formed thereon, and (b) a method of manufacturing a semiconductor substrate.
Utilizing the slurry composition for CMP according to any one of
A patterning method comprising the step of patterning the silicon nitride film by a CMP process.
ン酸化膜を形成する段階をさらに含むことを特徴とする
請求項１６に記載のパターニング方法。17. The patterning method of claim 16, further comprising the step of forming a silicon oxide film under the silicon nitride film.
ることを特徴とする請求項１６に記載のパターニング方
法。18. The patterning method according to claim 16, wherein the patterning method is employed in a damascene process or a SAC process.
ターニング方法を用いて得られたことを特徴とする半導
体素子。19. A semiconductor device obtained by using the patterning method according to claim 16.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2001-38115 | 2001-06-29 | ||
| KR1020010038115A KR100557600B1 (en) | 2001-06-29 | 2001-06-29 | CMP Slurry for Nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003051469A true JP2003051469A (en) | 2003-02-21 |
Family
ID=19711529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002190234A Pending JP2003051469A (en) | 2001-06-29 | 2002-06-28 | Slurry composition for cmp, patterning method, and semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6746314B2 (en) |
| JP (1) | JP2003051469A (en) |
| KR (1) | KR100557600B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005086196A (en) * | 2003-09-05 | 2005-03-31 | Hynix Semiconductor Inc | Method for manufacturing device isolation film of semiconductor device |
| JP2006120728A (en) * | 2004-10-19 | 2006-05-11 | Fujimi Inc | Composition for selectively polishing silicon nitride film and polishing method using it |
| JP2006518940A (en) * | 2003-02-24 | 2006-08-17 | ダウ グローバル テクノロジーズ インコーポレイティド | Materials and methods for chemical mechanical planarization |
| JP2010515245A (en) * | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Compositions and methods for selective removal of silicon nitride |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040042430A (en) * | 2002-11-14 | 2004-05-20 | 주식회사 하이닉스반도체 | Method for forming isolation layer of semiconductor device |
| KR100627510B1 (en) * | 2002-12-30 | 2006-09-22 | 주식회사 하이닉스반도체 | CMP slurry for nitride |
| KR100583118B1 (en) * | 2003-12-19 | 2006-05-23 | 주식회사 하이닉스반도체 | Method for Forming Capacitor of Semiconductor Device |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR101396853B1 (en) * | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | Slurry Composition for Polishing Silicon Nitride, Method of Polishing a Silicon Nitride Layer Using the Slurry Composition and Method of Manufacturing a Semiconductor Device Using the Slurry Composition |
| JP4458129B2 (en) * | 2007-08-09 | 2010-04-28 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
| KR101678114B1 (en) | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | Abrasive compositions for chemical mechanical polishing and methods for using same |
| JPWO2010047314A1 (en) | 2008-10-20 | 2012-03-22 | ニッタ・ハース株式会社 | Silicon nitride polishing composition and method for controlling selection ratio using the same |
| DE102010028461B4 (en) * | 2010-04-30 | 2014-07-10 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Leveling of a material system in a semiconductor device using a non-selective in-situ prepared abrasive |
| KR101043946B1 (en) * | 2011-03-14 | 2011-06-24 | 주식회사 마이크로텍 | Tenter feeler with enhanced optical sensitivity and its sensing method |
| KR102197402B1 (en) | 2014-10-14 | 2020-12-31 | 삼성전자주식회사 | Method of fabricating semiconductor device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| JP2689706B2 (en) * | 1990-08-08 | 1997-12-10 | 上村工業株式会社 | Polishing method |
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
| US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US5922091A (en) * | 1997-05-16 | 1999-07-13 | National Science Council Of Republic Of China | Chemical mechanical polishing slurry for metallic thin film |
| US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
| JPH11176773A (en) * | 1997-12-12 | 1999-07-02 | Toshiba Corp | Polishing method |
| KR100250775B1 (en) * | 1998-04-22 | 2000-04-01 | 빌.씨. 첸(Bill. C. Chen) | Polishing composition |
| SG73683A1 (en) * | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
| US6361402B1 (en) * | 1999-10-26 | 2002-03-26 | International Business Machines Corporation | Method for planarizing photoresist |
| KR100350056B1 (en) * | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | Method of forming a self-aligned contact pad in a damascene gate process |
| KR20020016098A (en) * | 2000-08-24 | 2002-03-04 | 윤종용 | Method for forming a metal line of semiconductor device using a damascene process |
| JP4931168B2 (en) * | 2005-01-06 | 2012-05-16 | 国立大学法人名古屋大学 | Method for producing high purity 2 to 5 carbon nanotubes |
-
2001
- 2001-06-29 KR KR1020010038115A patent/KR100557600B1/en not_active IP Right Cessation
-
2002
- 2002-01-22 US US10/053,565 patent/US6746314B2/en not_active Expired - Fee Related
- 2002-06-28 JP JP2002190234A patent/JP2003051469A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006518940A (en) * | 2003-02-24 | 2006-08-17 | ダウ グローバル テクノロジーズ インコーポレイティド | Materials and methods for chemical mechanical planarization |
| JP2005086196A (en) * | 2003-09-05 | 2005-03-31 | Hynix Semiconductor Inc | Method for manufacturing device isolation film of semiconductor device |
| JP2006120728A (en) * | 2004-10-19 | 2006-05-11 | Fujimi Inc | Composition for selectively polishing silicon nitride film and polishing method using it |
| JP2010515245A (en) * | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Compositions and methods for selective removal of silicon nitride |
| US8778210B2 (en) | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US9158203B2 (en) | 2006-12-21 | 2015-10-13 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US9691629B2 (en) | 2006-12-21 | 2017-06-27 | Entegris, Inc. | Compositions and methods for the selective removal of silicon nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030013385A1 (en) | 2003-01-16 |
| KR100557600B1 (en) | 2006-03-10 |
| US6746314B2 (en) | 2004-06-08 |
| KR20030002479A (en) | 2003-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6616514B1 (en) | High selectivity CMP slurry | |
| JP4489191B2 (en) | Planarizing composition for metal film removal | |
| TWI542676B (en) | CMP polishing solution and grinding method using the same | |
| US20020129560A1 (en) | Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers | |
| US6046112A (en) | Chemical mechanical polishing slurry | |
| JP2001200242A (en) | Aqueous slurry | |
| KR101603361B1 (en) | Chemical-mechanical polishing compositions and methods of making and using the same | |
| KR101992132B1 (en) | Method for chemical mechanical polishing tungsten | |
| JP2003051469A (en) | Slurry composition for cmp, patterning method, and semiconductor device | |
| US5938505A (en) | High selectivity oxide to nitride slurry | |
| JP2003514061A5 (en) | ||
| JP2004512681A (en) | Chemical mechanical polishing slurry and polishing method | |
| JP2013074036A (en) | Slurry for cmp and method for manufacturing semiconductor device | |
| JP2003109922A (en) | Abrasive material, cmp slurry composition, ruthenium pattern forming method, semiconductor device, and its manufacturing method | |
| KR100627510B1 (en) | CMP slurry for nitride | |
| CN101300320A (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
| US6652612B2 (en) | Silica particles for polishing and a polishing agent | |
| JPWO2011058816A1 (en) | CMP polishing liquid, and polishing method and semiconductor substrate manufacturing method using the same | |
| JP2003218067A (en) | SOLUTION FOR CMP, SOLUTION FOR RuCMP, AND RUTHENIUM PATTERN-FORMING METHOD UTILIZING THEM | |
| JP2000243733A (en) | Element isolation forming method | |
| JP2003277731A (en) | Abrasive particle and abrasive material | |
| US20020127954A1 (en) | Process for the chemical-mechanical polishing of isolation layers produced using the STI technology, at elevated temperatures | |
| JP2003213249A (en) | Silica particle for polishing and polishing material | |
| WO2008157048A1 (en) | Chemical-mechanical polishing compositions containing aspartame and methods of making and using the same | |
| KR100466422B1 (en) | Composition for chemical mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080311 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080609 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090106 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090602 |