JP2003016914A - Field emission type electron source element, electron gun and cathode-ray tube device using them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a field emission type electron source element for high performance color picture tube to which high resolution is required. SOLUTION: An electrode structure having a convergence effect is arranged proximity to the vicinity of an extraction electrode of a cold cathode electron source array part, whereby the convergence effect of emitted electron beams is enhanced to provide a satisfactory low-emittance characteristic. Consequently, an electron gun or display device having a high resolution characteristic can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cathode ray tube (CRT) used in a color television or a high-definition monitor television, and more particularly to an electron gun used in an electron beam exposure apparatus utilizing a focused electron beam. The present invention relates to a field emission type electron source element that can be used as an electron gun cathode for a high brightness cathode ray tube (CRT) that requires a high current density, an electron gun and a display device using the same, and a method for manufacturing a cathode ray tube.

[0002]

2. Description of the Related Art In recent years, flat display markets have been expanding rapidly with the introduction of thin displays such as liquid crystal displays and plasma displays. However, in terms of price / performance for a 32 inch size home television application. CRT displays still dominate. Also,
It is planned that new digital terrestrial broadcasting will be fully introduced from 2003, and it is expected that the display technology for television will change significantly. As the environment surrounding TVs shifts to digital systems, high resolution performance is strongly required especially for displays. However, there has been a possibility that the widely used television technology cannot sufficiently meet these demands. An electron gun is used in a television as a heart for displaying an image, and the performance of the electron gun is strongly related to the resolution performance. If the current density of the cathode used in the electron gun is improved, the effective cathode area can be reduced, and as a result, the resolution performance can be improved. The hot cathode material currently used as a cathode has been improved in various current technologies to improve the current density, but it is approaching its physical limit.
It is difficult to further improve the current density.
The cathode for an electron gun for digital broadcasting, which has been put into practical use in recent years, is required to have a current density improvement of about 6 to 10 times that of a conventional thermal cathode.

On the other hand, the idea of using a cold cathode for an electron gun has been proposed for a long time. The cold cathode is originally characterized by high current density, and has been put into practical use in some products such as electron microscopes.

As an example of using a cold cathode for a CRT for the first time, Japanese Patent Laid-Open Publication No. 48-90467 discloses an idea of a color picture tube using a field emission cathode. As a merit of using the field emission type cathode in a color picture tube, it can be said that it is suitable for low power consumption in addition to the above high current density. In the conventional hot cathode method, a heater for heating is required to emit electrons, and standby power of about several watts is always required even when the electron gun is not used. However, in the case of the field emission cathode, no heater is required for heating, so that there is an advantage that not only the waste of standby power is saved but also the electron gun can be instantly activated.

FIG. 8 is a sectional view of an electron gun structure using a field emission type cathode disclosed in Japanese Patent Laid-Open No. 48-90467. The cathodes 1R, 1G1B are composed of three or three groups of pyramidal protrusions, and the cathodes are insulated from each other by an insulating layer, and each has a brightness of red (R), green (G), and blue (B). Signal is added. The gate electrode composed of a metal thin film having a small hole for the cathode protrusion is given an appropriate potential so that a desired field emission current is generated from the cathode protrusion when a luminance signal is applied to the cathode. After passing through the control electrode, the emitted electron beam passes through the same orbit as a conventional electron gun and is focused on the screen. With this configuration, it has become possible to operate at a high current density, which could not be realized by the hot cathode method up to now, and it has become possible to obtain characteristics of high brightness and high resolution.

Further, in the field emission cathode having the focusing electrode disclosed in Japanese Unexamined Patent Publication No. 7-29484 shown in FIG. 9, the structure of the field emission type cathode described in Japanese Unexamined Patent Publication No. 48-90467 described above is used. In particular, this is an improvement in high resolution.

FIG. 9 shows a configuration diagram of a field emission cathode having a focusing electrode disclosed in Japanese Patent Laid-Open No. 7-29484.

In this figure, the conductor of the cathode electrode 92 is formed on the substrate 91 such as glass by sputtering.
A resistance layer 93 is formed on a part or all of the cathode electrode 92. A first insulating layer 94 and a gate electrode 95 are formed on the resistance layer 93 by sputtering or the like, and a second insulating layer 96 and a focusing electrode 97 are further formed thereon by sputtering or the like.

Further, the first insulating layer 94 and the gate electrode 95
A cone-shaped emitter 98 is formed in the opening formed in 1. Then, the second insulating layer 96 and the focusing electrode 9
An opening is also formed in 7 so that electrons emitted from the emitter 98 are emitted upward through this opening. The diameter of the opening formed in the second insulating layer 96 and the focusing electrode 97 is made larger than the diameter of the opening in which the emitter 98 is formed as shown in the figure. In the field emission cathode according to FIG. 9, a focusing electrode for focusing electrons emitted from the emitter is integrally formed on the gate electrode. Further, in order to improve the electron focusing degree and the extraction current value, the diameter of the focusing electrode is set to be approximately 1.2 to 2 times the diameter of the gate electrode. Therefore, the spread of the electrons emitted from the emitter can be suppressed to about the diameter of the focusing electrode. Therefore, when a field emission cathode having a focusing electrode is used in an image display device, a high definition image can be obtained.

[0010]

However, although the field emission cathode according to FIG. 9 described above is suitable for high resolution, it has a very serious problem that sufficient emission current required for high brightness cannot be obtained. This has been clarified by the subsequent examination results. In an image display device such as a CRT, the high brightness characteristic is the most important performance index along with the high resolution characteristic. As digital high-definition broadcasting becomes widespread in the future, CRTs are required to have a resolution higher than twice that of conventional broadcasting. At the same time, in terms of brightness, higher brightness characteristics than ever have been required. However, in the field emission cathode according to FIG. 9 described above, there is a trade-off relationship between the current emission performance and the emission electron beam focusing performance in principle, and the emission electron beam focusing performance is improved while maintaining a sufficient emission current. I couldn't do it. Specifically, the principle of current emission from the emitter 98 is that a positive voltage is applied to the gate electrode 95 to generate an extremely strong electric field at the tip of the emitter 98, and electrons are emitted into a vacuum. It uses the principle. Therefore, as the higher voltage is applied, the electric field concentration effect is enhanced, and a larger current emission can be obtained.
On the other hand, the focusing electrode 97, which is formed above the gate electrode 95 and focuses the electrons emitted from the emitter 98,
A voltage lower than that of the gate electrode 95 is applied to enhance the electron converging effect. This convergence voltage becomes more effective as the voltage of the gate electrode is lower than the voltage of the gate electrode, and the convergence performance can be further improved. However, the effect of the electric field due to the voltage applied to the converging electrode affects not only the emitted electron beam but also the electric field at the tip of the emitter 98. As shown in FIG. 9, the diameter of the focusing electrode is set to about 1.2 to 2 times the diameter of the gate electrode in order to improve the electron focusing degree and the extraction current value, and the spread of the electrons emitted from the emitter is increased. Under operating conditions where the diameter of the focusing electrode is suppressed, the emission current is drastically reduced to several tenths. Under such operating conditions, although the sufficient focusing effect of the electron beam is obtained, the emission current is greatly reduced, and thus sufficient luminance characteristics cannot be obtained.

Another problem is the alignment accuracy between the cathode structure and the electron gun when used in the electron gun.
Generally, the relative alignment accuracy between the cold cathode and the lens structure of the electron gun is required to be several tens of microns or less. In particular, the relative distance (gap height) from the cathode surface to the first lens of the electron gun greatly affects the resolution performance. However, unlike the hot cathode cathode, the cold cathode cathode is assembled with the electron gun structure using a positioning method using a mechanical jig after the cathode portion is formed using a semiconductor process. Due to the difference in materials and structures between the cold cathode and the electron gun structure, it is more difficult to maintain the alignment accuracy than in the case of the hot cathode, and it is difficult to achieve alignment of several tens of microns. It was As a result, while expecting the high resolution performance by using the cold cathode, the resolution performance deteriorates due to the error caused by these misalignment, and it is difficult to maintain the expected performance. .

In view of the above, the first object of the present invention is to obtain a field emission type electron source device for a high-performance color picture tube requiring high resolution, and a cathode structure and an electron lens are formed by a simple method. A second object is to obtain an electron gun having an accurate gap height setting function, and a third object is to obtain an electron gun having a beam focusing function. Further, the field emission type electron source element and the A fourth object is to obtain a high-performance display device equipped with an electron gun.

[0013]

In order to achieve the above object, a first invention is a substrate, an insulating layer having a plurality of openings formed on the substrate, and an insulating layer formed on the insulating layer. A field emission type electron source array element section including an extraction electrode, a plurality of cathodes formed in the plurality of openings on the substrate, and a field emission type electron source element, and the opening is provided on the field emission type. An electrode structure part at least a part of which is arranged so as to surround the electron source array part and has conductivity, wherein the electrode structure forms a trajectory of an electron beam emitted from the field emission type electron source element. It is configured to have a converging lens function for converging. With this configuration, the spread of the electron beam emitted from the field emission electron source can be effectively converged in the vicinity of the electron source, which is suitable for high resolution.

A second aspect of the present invention is the configuration of the first aspect, wherein the electrode structure is made of a conductive material and an insulating material and has at least two or more laminated layers. . With this configuration, by using the insulating material on the lower surface side or the upper surface side of the electrode structure, it is possible to maintain the insulating property from the other material made of the conductive material, and the degree of freedom in the element design is high.

In a third aspect of the present invention, a configuration in which at least one of the upper surface and the lower surface of the electrode structure is an insulating material is added to the configuration of the first invention. With this configuration, the lower surface side of the electrode structure can be placed directly on the extraction electrode of the field emission type electron source element made of a conductive material by using an insulating material, so that it is possible to design freely. The degree is high.

In a fourth aspect of the invention, in the structure of the first aspect, the height of the electrode structure acts as a support for holding a gap height with the electrode structure disposed on the electrode structure. Is added. With this configuration, the thickness of the electrode structure is processed in advance to the height of the gap between the electrode structure arranged on the electrode structure and the height of the gap between the field emission electron source and the electrode structure. The setting can be made highly accurate, which is suitable for high resolution.

A fifth invention is that an electron gun and an electron gun are provided in a vacuum container.
A display device comprising means for deflecting an electron beam emitted from the electron gun and a phosphor layer provided at a position facing the electron gun, wherein the cathode of the electron gun is a cathode of the electron gun. It is configured to include the field emission type electron source element according to any one of the above. With this configuration, since the field emission electron source having the electron beam converging function is used as the cathode of the electron gun, a display device suitable for high resolution can be obtained.

A sixth invention is that an electron gun is provided in a vacuum container,
An image display device comprising means for deflecting an electron beam emitted from the electron gun and a phosphor layer provided at a position facing the electron gun, wherein the cathode of the electron gun is the cathode of the electron gun. And a field emission type electron source element according to any one of the above. With this configuration, since the field emission electron source having the electron beam converging function is used as the cathode of the electron gun, an image display device suitable for high resolution can be obtained.

A seventh aspect of the invention is to provide an electron gun in a vacuum container,
A cathode ray tube device comprising means for deflecting an electron beam emitted from the electron gun and a phosphor layer provided at a position facing the electron gun, wherein the cathode of the electron gun is a cathode. And a field emission type electron source element according to any one of the above. With this configuration, since the field emission electron source having the electron beam converging function is used as the cathode of the electron gun, a cathode ray tube device suitable for high resolution can be obtained.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) The structure of a field emission electron source element according to Embodiment 1 of the present invention will be described below with reference to FIG. As shown in FIG. 1, the extraction electrode 12 is provided on the substrate 11 via an insulating layer having circular openings in the array-shaped cathode formation region.
Are formed. As the substrate 11, an optimum material such as a normal glass substrate or a silicon substrate can be used. Electron emitting portions are formed inside the openings of the insulating layer and the extraction electrode 12, respectively, and a field emission electron source array portion 13 including a plurality of electron emitting portions is formed at a desired position on the substrate 11. . Here, the material and structure of the electron emission portion will not be described in detail, but a Spindt-type electron source formed by a commonly used molybdenum vapor deposition method may be used, or a silicon electron source formed by using a silicon process. But it doesn't matter. On the extraction electrode 12, an electrode structure 14 having an opening so as to surround the field emission type electron source array section 13 is arranged, and the center of the opening of the field emission type electron source array section 13 and the electrode structure. 14
Alignment is performed so that the centers of the openings of the are aligned. Further, the electrode structure 14 is composed of a laminated body of at least two layers, and in the first embodiment, the first insulating layer 1 is used.
5, a case of a laminated body including three layers of the conductive layer 16 and the second insulating layer 17 will be described. Since the extraction electrode 12 is arranged with the conductive layer 16 via the first insulating layer 15 of the electrode structure 14, the insulation with the conductive layer 16 is maintained. By applying a desired positive voltage to the extraction electrode 12, a high electric field is applied to the tip of each electron emission portion of the field emission electron source array portion 13, and the electron beam 18 is emitted into a vacuum based on the field emission principle. Can be made.

Next, the principle of operation of the function of the electron beam converging lens of the field emission type electron source element according to the first embodiment will be described. Although these functions can be used for display devices such as FEDs and display tubes, they are particularly effective functions when the field emission type electron source element is used as an electron gun cathode for a cathode ray tube. Regarding the resolution characteristics of the electron gun of the cathode ray tube, it is theoretically advantageous to reduce the beam emittance emitted from the electron source array section when a cold cathode is used as the cathode. This beam emittance is represented by the product of the initial energy of the electron beam emitted from the electron source array section and its divergence angle. It is desirable to reduce the initial energy of the electron beam,
Since it is necessary to reduce the size of the electron source array, there are many restrictions in terms of manufacturing technology and manufacturing cost. Alternatively, if the beam divergence angle can be reduced near the electron source region, the same effect can be obtained.

The voltage applied to the extraction electrode 12 is Vex,
When the convergence voltage applied to the conductive layer 16 of the electrode structure is Vfoc and the voltage is set so as to satisfy the relationship of Vex> Vfoc, the equipotential line 19 can be schematically represented as shown in FIG. The electron beam 18 emitted from each electron emission portion of the field emission electron source array portion 13 exerts a force capable of being bent in a direction perpendicular to the equipotential line 19, so that the electron beam 18 is separated from the conductive layer 16 as shown in FIG. The orbit will be bent. Among the beams emitted from the field emission type electron source array unit 13, the electron beam closer to the conductive layer 16 than the center of the array has a larger bending force, and as a result, the electron beam is subjected to the converging action. become. The thickness of the conductive layer 16 is
The thicker the lens, the greater the lens converging action, but it is desirable to select an optimum value from the viewpoint of element design and manufacturing process. In the first embodiment, considering the application to the electron gun,
It was set to 70 microns. According to this configuration, the emitted electron beam has a sufficient focusing action along the thickness direction of the electrode structure, and thus has a good focusing lens function.

For the above reasons, according to the field emission type electron source device of the first embodiment, the electron beam emitted from the field emission type electron source array section has a good converging action in the vicinity of the electron emission region. Since it has a low emittance, it has a great effect on high resolution, particularly when it is used as a cathode for an electron gun of a cathode ray tube.

The electron source described in the first embodiment has been described by taking a typical cathode ray tube (CRT) as an example, but the application is not limited to the cathode ray tube. For example, it can be applied to a high-brightness light emitting display tube for outdoor display, a light emitting display tube for illumination, and the like.

(Second Embodiment) The structure of a field emission electron source element according to the second embodiment of the present invention will be described below with reference to FIG.

As shown in FIG. 2, the extraction electrode 22 is formed on the substrate 21 via an insulating layer having circular openings in the array-shaped cathode formation region.
As the substrate 21, an optimum material such as a normal glass substrate or a silicon substrate can be used. Electron emitting portions are formed inside the openings of the insulating layer and the extraction electrode 22, respectively, and a field emission type electron source array portion 23 including a plurality of electron emitting portions is formed at a desired position on the substrate 21. . Here, the material and structure of the electron emission portion will not be described in detail, but a Spindt-type electron source formed by a commonly used molybdenum vapor deposition method may be used, or a silicon electron source formed by using a silicon process. But it doesn't matter. On the extraction electrode 22, an electrode structure 24 having an opening arranged so as to surround the field emission type electron source array section 23 is arranged, and the field emission type electron source array section 23 is arranged.
The alignment is performed so that the center of the opening of the electrode structure 24 and the center of the opening of the electrode structure 24 coincide with each other. In addition, the electrode structure 2
4 is composed of a laminated body of at least two layers or more, and in the second embodiment, a case where the conductive layer 26 is formed on a part of the surface of the insulating layer 25 will be described. The insulator 25 may be a glass material or a ceramic material, and a material that is most suitable for the process and temperature conditions may be selected. The conductive layer 26 is arranged so as to surround the field emission electron source array section 23. The extraction electrode 22 has an electrode structure 24.
Since it is arranged with the conductive layer 26 via the insulating layer 25, the insulating property from the conductive layer 26 is maintained. By applying a desired positive voltage to the extraction electrode 22, a high electric field is applied to the tip region of each electron-emitting portion of the field-emission electron source array portion 23, and the electron beam 2 is drawn into a vacuum based on the field-emission principle.
7 can be released.

Since the operation principle of the electron beam converging lens function of the field emission type electron source element according to the second embodiment is the same as that of the first embodiment of the present invention described above, detailed description thereof will be omitted. To do. When the voltage applied to the extraction electrode 22 is Vex, the convergence voltage applied to the conductive layer 26 of the electrode structure is Vfoc, and the voltages are set so as to satisfy the relationship of Vex> Vfoc, the field emission type electron source array section 23 is individually configured. The electron beam 27 emitted from the electron emitting portion of the above is subjected to a force that is bent in the direction perpendicular to the equipotential line, so that the trajectory is bent so as to separate from the conductive layer 26 as shown in FIG. Among the beams emitted from the field-emission electron source array section 23, the electron beam closer to the conductive layer 26 than the center of the array has a larger bending force, and as a result, the electron beam is subjected to a converging action. become. In the second embodiment, the case where the electrode structure described in the first embodiment is different from the electrode structure described above and the conductive layer 26 is formed on a part of the surface of the insulating layer 25 has been described. Since the structure has a simple manufacturing method, there is an advantage that the same function can be realized at low cost.

For the above reasons, according to the field emission type electron source element according to the second embodiment, the electron beam emitted from the field emission type electron source array section has a good converging action in the vicinity of the electron emission region. Since it has a low emittance, it has a great effect on high resolution, particularly when it is used as a cathode for an electron gun of a cathode ray tube.

The electron source described in the second embodiment has been described by taking a typical cathode ray tube (CRT) as an example, but the application is not limited to the cathode ray tube. For example, it can be applied to a high-brightness light emitting display tube for outdoor display, a light emitting display tube for illumination, and the like.

(Third Embodiment) The structure of the field emission type electron source element according to the third embodiment of the present invention will be described below with reference to FIG. The basic structure of the field emission electron source element according to the third embodiment is the same as that of the first embodiment.
The structure is the same as that of the field emission electron source element described in the second embodiment. As shown in FIG. 3, the extraction electrode 32 is formed on the substrate 31 via an insulating layer having circular openings in the array-shaped cathode formation region. As the substrate 31, an optimum material such as a normal glass substrate or a silicon substrate can be used. Electron emitting portions are formed inside the openings of the insulating layer and the extraction electrode 32, respectively, and a field emission type electron source array portion 33 including a plurality of electron emitting portions is formed on the entire surface of the substrate 31. Here, the material and structure of the electron-emitting portion will not be described in detail, but a Spindt-type electron source formed by a commonly used molybdenum vapor deposition method may be used, or a silicon electron source formed by using a silicon process. But it doesn't matter. On the extraction electrode 32, an electrode structure 34 having an opening so as to surround the field emission type electron source array section 33 is arranged, and the center of the opening of the field emission type electron source array section 33 and the electrode structure. The alignment is performed so that the centers of the openings of 34 coincide with each other. The electrode structure 34 is composed of a laminated body of at least two layers,
In the third embodiment, a case of a laminated body including three layers of a first insulating layer 35, a conductive layer 36, and a second insulating layer 37 will be described.
The extraction electrode 32 is the first insulating layer 35 of the electrode structure 34.
Since the conductive layer 36 is disposed via the
Insulation with is maintained. On the second insulating layer 37, an electron lens portion 38 composed of an assembly of grid electrodes G1 to G5, which are constituent elements of the electron gun, is arranged in proximity. The grid electrodes G1 to G5 forming the electron lens unit 38
An optimal voltage is applied to each of the electrodes, and the beam current emitted from the field-emission electron source array section 33 is accelerated and converged. Since the grid electrode G1 of the electron lens portion is arranged directly on the insulating layer of the electrode structure 34, the relative gap value between the field emission electron source array portion and the grid electrode G1 is determined by the electrode structure 34.
The thickness can be controlled. The accuracy of the gap height has a great influence on the resolution performance, and is required to be several tens of microns or less. In the configuration of the third embodiment, the electrode structure 34 includes the field emission type electron source array section 33.
It need not be made using the same process as. An electrode structure that is optimally and highly accurately manufactured using an optimal material / process in advance may be hybrid-mounted on the field emission electron source array section 33 after being aligned. Since it is possible to fabricate a structure with an accuracy of about several microns using a glass material or a ceramic material, it is possible to sufficiently satisfy the gap accuracy requirement.

For the above reasons, according to the field emission type electron source device according to the third embodiment, particularly when it is used as a cathode for an electron gun of a cathode ray tube, the thickness of the electrode structure is previously set on the electrode structure. By processing the gap height with the electrode structure to be arranged, the gap height between the field emission electron source and the electrode structure can be set with high accuracy, which is a great advantage for high resolution. Exert.

The electron source described in the third embodiment has been described by taking a typical cathode ray tube (CRT) as an example, but the application is not limited to the cathode ray tube. For example, it can be applied to a high-brightness light emitting display tube for outdoor display, a light emitting display tube for illumination, and the like.

(Embodiment 4) The configuration of a display device according to Embodiment 4 of the present invention will be described below with reference to FIG. As shown in FIG. 4, the neck 42 of the valve 41
The electron gun 43 is housed inside, and the electron beam 44 emitted from the electron gun 43 is scanned by the deflection yoke 46 mounted on the outer periphery of the funnel 45, and the fluorescent film 48 adhered to the inner surface of the face panel 47 is scanned. Illuminate the face panel 4
7 is configured to form an image on the entire screen. The electron gun used here has at least one of the structure of the field emission electron source element and the electron gun described in the first to third embodiments.

Next, the means for arbitrarily optimizing the shape of the electron beam, which is a component of the fourth embodiment, will be described with reference to FIG.
Will be specifically described below.

In FIG. 5, a field emission type electron source device 50 is shown.
1 is fixed on the cathode structure 502. At a position facing the vicinity of the field emission electron source element 501,
Through the electrode structure 503 described in the first to third embodiments, the grid electrodes G1 to G
An electronic lens unit 504 composed of an assembly of 5 is arranged. The grid electrode G forming the electron lens unit 504
An optimum voltage is applied to each of the electrodes 1 to G5, which has the function of accelerating and converging the electron beam 505 emitted from the field emission electron source element 501.
The electron beam 505 that has passed through the electron lens unit 504 is subjected to the action of the deflection magnetic field from the deflection yoke 506, and is irradiated on the optimum position of the face panel 507 to form a desired image. At that time, the spot shape of the irradiated electron beam 505 is theoretically deformed into a distorted shape due to the influence of distortion of the deflection magnetic field and the oblique incidence on the face panel. The beam spot irradiated on the face panel is
Depending on the position of the screen to be illuminated, what was a spot shape of a perfect circle in the central part of the screen is crushed in the lateral direction in the peripheral part of the screen and shows an elliptical spot shape. To solve this problem, in the configuration of the fourth embodiment, the shape of the electron beam 505 emitted from the field emission electron source element 501 is arranged in axially symmetrically separated electrodes in synchronization with the deflection scanning of the electron beam. The above-mentioned beam shape is corrected by applying different voltages to the structures 503a and 503b and changing the beam convergence characteristics by different electric fields in the radial direction. With reference to FIG. 6, for example, an ideal perfect circular beam spot 61 is formed in the center of the screen.
However, in the peripheral portion of the screen, an elliptical shape such as 62 due to the distortion effect and a rotated shape is shown. At this time, as a function of canceling the distortion in the opposite direction, different voltages are applied to the electrode structures 503a and 503b separately arranged in axial symmetry to synchronize with different electric fields in the radial direction, thereby reducing the beam distortion. be able to. The planar arrangement configuration of the electrode structure may be a rectangular electrode arrangement as shown in FIG. 7 (a) or a circumferential electrode shape as shown in FIG. 7 (b). Good. It is preferable to perform the optimal electrode arrangement in consideration of the beam convergence. By performing the above-mentioned beam shape correction operation by a preset circuit in synchronization with the deflection circuit that irradiates the screen with the electron beam, the distortion of the electron beam is minimized, resulting in resolution over the entire screen. It becomes possible to improve the performance.

For the above reasons, according to the display device according to the fourth embodiment, the beam convergence correction operation of the field emission type electron source array section in the electron gun is synchronized with the preset deflection circuit to form the spot beam. Since the shape can be optimally corrected, particularly when it is used as a cathode for an electron gun of a cathode ray tube, it has a great effect on high resolution.

The electron source described in the fourth embodiment has been described by taking a typical cathode ray tube (CRT) as an example, but the application is not limited to the cathode ray tube. For example, it can be applied to a high-brightness light emitting display tube for outdoor display, a light emitting display tube for illumination, and the like.

[0038]

For the above reasons, according to the field emission type electron source element according to the first embodiment, the electron beam emitted from the field emission type electron source array portion is well converged in the vicinity of the electron emission region. Since it has a low emittance due to the action, it has a great effect on high resolution, especially when it is used as a cathode for an electron gun of a cathode ray tube.

Further, according to the field emission type electron source element according to the second embodiment, the electron beam emitted from the field emission type electron source array section is subjected to a good converging action in the vicinity of the electron emission region, which is more effective. In particular, when it is used as a cathode for an electron gun of a cathode ray tube, it has a large effect on high resolution.

Further, according to the field emission type electron source element according to the third embodiment, particularly when it is used as a cathode for an electron gun of a cathode ray tube, the thickness of the electrode structure is preliminarily set on the electrode structure. By processing the gap height between the body and the body, the gap height between the field emission electron source and the electrode structure can be set with high accuracy, which is very effective in achieving higher resolution.

Further, according to the display device of the fourth embodiment, the beam convergence correction operation of the field emission type electron source array section in the electron gun is synchronized with the preset deflection circuit to perform the optimum correction of the spot beam shape. Since it can be performed, particularly when used as a cathode for an electron gun of a cathode ray tube, it has a great effect on high resolution.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a field emission electron source element according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a field emission electron source element according to a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a field emission electron source element according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram showing a cathode ray tube device according to a fourth embodiment of the present invention.

FIG. 5 is a configuration diagram showing an electron gun according to a fourth embodiment of the present invention.

FIG. 6 is a principle explanatory diagram showing beam spot distortion according to the fourth embodiment of the present invention.

FIG. 7 is a plan view showing a planar arrangement example of an electrode structure according to a fourth embodiment of the present invention.

FIG. 8 is a cross-sectional view showing an electron gun structure according to a first conventional example.

FIG. 9 is a sectional view showing an electron gun structure according to a second conventional example.

[Explanation of symbols]

11 board 12 Lead electrode 13 Field emission type electron source array section 14 Electrode structure part 15 First Insulating Layer of Electrode Structure 16 Conductive layer of electrode structure 17 Second Insulating Layer of Electrode Structure 18 electron beam 19 equipotential lines

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Ryuichi Murai             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Masahide Yamauchi             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Koji Fujii             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Takashi Ito             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5C031 DD17                 5C036 EE01 EE14 EE15 EF01 EF06                       EF09 EG12 EG19 EH04                 5C041 AA03 AB02 AC01 AD02 AD03                       AE01

Claims (7)

[Claims] 1. A substrate, an insulating layer having a plurality of openings formed on the substrate, a lead electrode formed on the insulating layer, and formed in the plurality of openings on the substrate. A field emission type electron source array element section comprising a plurality of cathodes, and at least a part of the field emission type electron source array section, which is provided on the field emission type electron source element and has an opening surrounding the field emission type electron source array section. And an electrode structure part having a field emission type electron source, wherein the electrode structure has a converging lens function of converging the trajectory of an electron beam emitted from the field emission type electron source element. element. 2. The field emission electron source element according to claim 1, wherein the electrode structure is made of a conductive material and an insulating material and has at least two or more stacked layers. 3. The field emission electron source element according to claim 2, wherein at least one of an upper surface and a lower surface of the electrode structure is made of an insulating material. 4. The height of the electrode structure acts as a support for holding a height of a gap between the electrode structure and the electrode structure arranged on the electrode structure. Field emission electron source device. 5. A display device comprising an electron gun, means for deflecting an electron beam emitted from the electron gun, and a phosphor layer provided at a position facing the electron gun in a vacuum container, A display device comprising the field emission electron source element according to any one of claims 1 to 4 as a cathode of the electron gun. 6. A display device comprising an electron gun, means for deflecting an electron beam emitted from the electron gun, and a phosphor layer provided at a position facing the electron gun, in a vacuum container, An image display device comprising the field emission electron source element according to any one of claims 1 to 4 as a cathode of the electron gun. 7. A display device comprising an electron gun, means for deflecting an electron beam emitted from the electron gun, and a phosphor layer provided at a position facing the electron gun, in a vacuum container, A cathode ray tube device comprising the field emission electron source element according to any one of claims 1 to 4 as a cathode of the electron gun.