JP2003016905A - Electron emission device, manufacturing method thereof and display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron emission device drivable at a low voltage without being influenced by a displacement in manufacturing process, a manufacturing method thereof, and a display device equipped with the electron emission device. SOLUTION: This electron emission device, comprises a glass substrate 1, a cathode electrode 2 formed on the upper surface of the glass substrate 1, a gate electrode 3 formed on the upper surface of the glass substrate 1 beside the cathode electrode 2, a CNT layer 4 formed on the upper surface of the glass substrate 1 to cover the cathode electrode 2, and a CNT layer 4 formed on the upper surface of the glass substrate 1 to cover the gate electrode 3. A minute gap G1 is formed between CNT layer 4 and CNT layer 5. The CNT layers 4 and 5 function as an electron emission layer capable of emitting electrons by the electric field between the cathode electrode 2 and the gate electrode 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a field emission type electron emitting device that emits electrons by an electric field, a method of manufacturing the same, and a structure of a display device including the electron emitting device.

[0002]

2. Description of the Related Art Among various flat panel type display devices that have been actively researched in recent years, FED (Field Emis
sion display) is expected as a next-generation display device because of its high brightness, high contrast, wide viewing angle, and low power consumption. An electron emission device using carbon nanotubes (CNTs) or the like is used for the FED. Since this electron emission device can be manufactured by a printing process or the like, there is also an advantage that the manufacturing cost is relatively low.

FIG. 13 is a sectional view showing the structure of a conventional electron-emitting device. Ag, Au,
A cathode electrode (also called “cold cathode” or “cold cathode”) 102 made of ITO or the like is formed. An insulating layer 105 is formed on the cathode electrode 102, and a gate electrode 103 made of Ag, Au, or the like is formed on the insulating layer 105. A CNT layer 104 is formed in a recess having a side surface defined by the insulating layer 105 and a bottom surface defined by the cathode electrode 102.

FIG. 14 is a sectional view schematically showing the structure of a conventional display device having the electron emitting device shown in FIG. A plurality of electron-emitting devices shown in FIG. 13 are formed in a matrix on a glass substrate (rear glass substrate) 101. R (red), G (green), and B (blue) phosphors are provided on the back surface (surface opposite to the display surface) of the front glass substrate 50, which is the display surface, corresponding to each electron-emitting device. 52 is formed. Further, on the back surface of the front glass substrate 50,
An aluminum back film 53 is formed so as to cover the phosphor 52. The aluminum back film 53 functions as an anode for guiding the electrons emitted from the electron emitting device to the phosphor 52.
The spacer glass 51 is bonded to each peripheral edge of the front glass substrate 50 and the rear glass substrate 101 by low melting glass. Front glass substrate 50, rear glass substrate 10
The outer container is constituted by 1 and the spacer glass 51, and the inner space thereof is kept in vacuum.

A chip glass tube 54 is attached to the rear surface of the rear glass substrate 101 (the surface opposite to the surface on which the electron-emitting device is arranged). Chip glass tube 54
A getter 55 is provided inside. Getter 55
In order to maintain a high vacuum inside the outer container, it is provided to perform an impurity gas adsorption step after the outer container is assembled. Further, an anode lead wire 56 connected to the aluminum back film 53 is drawn out of the device from the chip glass tube 54. From the rear glass substrate 101, a cathode electrode terminal 57 connected to the cathode electrode 102 and a gate electrode terminal 58 connected to the gate electrode 103 are provided.
Each is pulled out of the device. Further, the display device is provided with a power supply device, a drive circuit, and the like, which are not shown.

During operation of the display device, a predetermined high voltage is applied to the aluminum back film 53 through the anode lead wire 56. Further, a predetermined signal voltage is applied to the cathode electrode 102 and the gate electrode 103 via the cathode electrode terminal 57 and the gate electrode terminal 58, respectively. In particular, a pulse signal corresponding to image data to be displayed is applied to the gate electrode 103. Cathode electrode 10
2 by the electric field between the gate electrode 103 and the CNT layer 1
The electrons emitted from 04 are accelerated by the high voltage of the aluminum back film 53 and collide with the phosphor 52, whereby the phosphor 52 is excited and emits light.

[0007]

As described above, the conventional electron-emitting device has the cathode electrode 102, the CNT layer 104,
The insulating layer 105 and the gate electrode 103 form a four-layer structure. Each of these layers is sequentially formed by a screen printing method or a CVD method. When the printing method is used, the screen plate is replaced or the substrate is taken out by a drying process. When the CVD method is used, the mask jig is replaced or the substrate is removed. None of them can form a continuous film by taking out. As a result, misalignment occurs in the process of forming each of these layers in multiple layers, for example, the gate electrode 103 and the CNT.
There is a problem that the layer 104 and the layer 104 come into contact with each other.

Further, the thickness of the insulating layer 105 may be increased,
Although it is possible to avoid contact between the gate electrode 103 and the CNT layer 104 by increasing the opening area of the gate electrode 103, in this case, the gate electrode 103
Since the distance between the cathode electrode 104 and
Another problem arises in that the driving voltage becomes high.

The present invention has been made to solve the above problems, and is an electron-emitting device that can be driven at a low voltage without being affected by positional deviation in the manufacturing process, a method for manufacturing the same, and a method for manufacturing the same. It is an object to obtain a display device including the electron emitting device.

[0010]

[Means for Solving the Problems] Claim 1 of the present invention
The electron emission device according to claim 1, the substrate, a cathode electrode formed on the main surface of the substrate, a gate electrode formed on the main surface of the substrate along with the cathode electrode, and the main electrode of the substrate covering the cathode electrode. A first electron emission layer formed on the surface and capable of emitting electrons by an electric field between the cathode electrode and the gate electrode.

According to a second aspect of the present invention, the electron emitting device according to the first aspect is the electron emitting device according to the first aspect, wherein the electron emitting device is formed on the main surface of the substrate so as to cover the gate electrode and form a minute gap. It is characterized by further comprising a second electron emission layer facing the first electron emission layer with being sandwiched therebetween.

The electron emitting device according to claim 3 of the present invention is the electron emitting device according to claim 1 or 2, wherein a plurality of cathode electrodes and a plurality of gate electrodes are provided.
It is characterized in that they are formed alternately.

According to a fourth aspect of the present invention, in the method of manufacturing an electron-emitting device, (a) a step of preparing a substrate, and (b) a cathode electrode and a gate electrode are arranged side by side on the main surface of the substrate. And (c) forming a first electron emission layer capable of emitting electrons by an electric field between the cathode electrode and the gate electrode on the main surface of the substrate so as to cover the cathode electrode. Is.

A method for manufacturing an electron-emitting device according to a fifth aspect of the present invention is the method for manufacturing an electron-emitting device according to the fourth aspect, wherein in the step (c), the first electron-emitting device is produced. The layer is characterized in that it is patterned on the main surface of the substrate by a screen printing method.

A method of manufacturing an electron-emitting device according to a sixth aspect of the present invention is the method of manufacturing an electron-emitting device according to the fourth aspect, which is (d) the first method with a minute gap interposed therebetween. The method further comprises the step of forming a second electron emission layer facing the electron emission layer on the main surface of the substrate while covering the gate electrode.

The method for manufacturing an electron-emitting device according to a seventh aspect of the present invention is the method for manufacturing an electron-emitting device according to the sixth aspect, wherein steps (c) and (d) include ( c
d-1) a step of forming a third electron emission layer covering the cathode electrode and the gate electrode in a solid film form on the main surface of the substrate,
By cutting the third electron emission layer between the cathode electrode and the gate electrode using the (cd-2) sharpened piece, the third
And a step of separating the electron emission layer of 1) into a first electron emission layer and a second electron emission layer.

The method of manufacturing an electron-emitting device according to claim 8 of the present invention is the method of manufacturing an electron-emitting device according to claim 7, wherein in the step (cd-1), the third method is used. The electron emission layer is formed by a screen printing method or a CVD method.

A method for manufacturing an electron-emitting device according to a ninth aspect of the present invention is the method for manufacturing an electron-emitting device according to the sixth aspect, wherein steps (c) and (d) include a screen. It is characterized by including a step of patterning the first and second electron emission layers on the main surface of the substrate by a printing method.

According to a tenth aspect of the present invention, a plurality of display devices are arranged in a matrix.
1 to 3, a display panel having a phosphor formed corresponding to each of the plurality of electron emitting devices, and guiding electrons emitted from the electron emitting device to the phosphor. And an anode electrode for

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. FIG. 1 is a diagram showing a structure of an electron emission device according to the first embodiment of the present invention. 1A is a top view, and FIG. 1B is a top view.
It is sectional drawing which shows the cross-section about the position along the line segment XX shown in (A). Referring to FIG. 1, the electron emission device according to the first embodiment includes a glass substrate 1, a cathode electrode 2 formed on the upper surface of glass substrate 1, and an upper surface of glass substrate 1 arranged side by side with cathode electrode 2. The gate electrode 3 formed on the CNT layer 4, the CNT layer 4 formed on the upper surface of the glass substrate 1 to cover the cathode electrode 2, and the CNT layer 5 formed on the upper surface of the glass substrate 1 to cover the gate electrode 3. It has and. The cathode electrode 2 and the gate electrode 3 are Ag, A
It is made of a metal such as u or Al. The cathode electrode 2 and the gate electrode 3 are arranged in parallel while being separated from each other. A minute gap G1 is formed between the CNT layer 4 and the CNT layer 5. The CNT layers 4 and 5 function as electron emission layers capable of emitting electrons due to the electric field between the cathode electrode 2 and the gate electrode 3.

2 to 4 are views showing a method of manufacturing the electron-emitting device according to the first embodiment in the order of steps. Figure 2 (A)
4A is a top view corresponding to FIG.
2B to 4B are cross-sectional views corresponding to FIG. 1B. Referring to FIG. 2, first, glass substrate 1 is prepared, and then cathode electrode 2 and gate electrode 3 are formed side by side on the upper surface of glass substrate 1. With reference to FIG. 3, next, a paste obtained by mixing CNT powder with a solvent is printed by a screen printing method on the upper surface of the glass substrate 1 so as to cover the cathode electrode 2 and the gate electrode 3 in the form of a solid film. To do. However, it may be formed by a CVD method instead of the screen printing method. Then, the CNT layer 6 is formed through a drying process and a baking process.

Referring to FIG. 4, next, using a metal piece 7 having a sharp tip, the upper surface of the glass substrate 1 is placed between the cathode electrode 2 and the gate electrode 3 (for example, the central portion of both electrodes). Mark the CNT layer 6 until it is exposed. Thereby, the CNT layer 6
Is cut and separated into a CNT layer 4 on the cathode electrode 2 side and a CNT layer 5 on the gate electrode 3 side. Then, by spraying an inert gas, the CN generated by cutting
Remove the T residue. Through the above steps, the structure shown in FIG. 1 is obtained. The sharper the tip of the metal piece 7 used in the step shown in FIG. 4, the shorter the gap length of the gap G1.

As described above, according to the electron emission device and the manufacturing method thereof according to the first embodiment, both the cathode electrode 2 and the gate electrode 3 are formed on the upper surface of the glass substrate 1. Therefore, it is possible to manufacture the electron-emitting device by a very simple method without causing the problem of positional deviation that has occurred in the conventional multilayer formation.

Further, after the CNT layer 6 is formed in a solid film shape, the CNT layer 6 is cut by scoring using a sharp piece to separate the CNT layers 4 and 5. Therefore, the gap length of the gap G1 can be made very short and CN
The edges of the cut surfaces of the T layers 4 and 5 can be made steep. As a result, the electric field is concentrated near the edge of the CNT layer 4 on the cathode electrode 2 side, so that the voltage applied to the gate electrode 3 can be lowered, and driving at a lower voltage than in the past can be performed.

Embodiment 2. In the first embodiment, the CNT layer 6 formed in a solid film is cut to cut C
Separated into NT layers 4 and 5, but separated from the beginning
You may form a layer. FIG. 5 is a diagram corresponding to FIG. 1 and showing the structure of the electron-emitting device according to the second embodiment of the present invention. The CNT layer 10 is formed instead of the CNT layer 4, and the CNT layer 11 is formed instead of the CNT layer 5. A small gap G2 is formed between the CNT layers 10 and 11.
Are formed. However, the gap length of the gap G2 is slightly longer than the gap length of the gap G1. Also,
The edges of the CNT layers 10 and 11 in the gap G2 portion have a gentler slope than the edges of the CNT layers 4 and 5 in the gap G1 portion. The other structure of the electron emitting device according to the second embodiment is the same as the structure of the electron emitting device according to the first embodiment shown in FIG.

In the electron emission device according to the second embodiment, after the structure shown in FIG. 2 is obtained, C is formed by the screen printing method.
It can be manufactured by pattern-printing a paste on the planned formation positions of the NT layers 10 and 11, and then drying and firing the paste. However, in order to avoid mutual contact due to some inflow of the paste after printing, it is necessary to form the CNT layers 10 and 11 with a certain gap (gap G2).

In the above description, the CNT layer 10 that covers the cathode electrode 2 and the CNT layer 11 that covers the gate electrode 3.
Although the case where both and are formed has been described, the CNT layer 11 on the gate electrode 3 side does not necessarily have to be formed. FIG. 6 is a diagram corresponding to FIG. 1 and showing a structure of an electron emission device according to a modification of the second embodiment. Only the CNT layer 12 covering the cathode electrode 2 is formed by the pattern printing by the screen printing method. Between the CNT layer 12 and the gate electrode 3, a gap G3 having a gap length similar to the gap G2 is formed. In the structure shown in FIG. 5, when pattern-printing the paste for the CNT layers 10 and 11, it is necessary to consider the inflow from both the paste on the cathode electrode 2 side and the paste on the gate electrode 3 side. High positional accuracy is required. However, in the structure shown in FIG. 6, it is not necessary to consider the flow-in from the paste on the gate electrode 3 side, and therefore the positional accuracy required at the time of pattern printing can be lowered. However, according to the structure shown in FIG. 5, since the CNT layer 11 is also formed on the gate electrode 3 side, it is possible to switch the gate electrode and the cathode electrode by switching the signal to the wiring if necessary. It is possible to expect the effect of being able to improve the life.

As described above, according to the electron-emitting device and the method of manufacturing the same according to the second embodiment, the C formed in a solid film is formed.
The CNT layers 10 and 11 separated from the beginning are formed by pattern printing by the screen printing method instead of separating the CNT layers 4 and 5 by cutting the NT layer 6. Therefore, the driving voltage cannot be lowered as much as the electron emission device according to the first embodiment, but the step of cutting the CNT layer 6 (FIG. 4) in the first embodiment can be omitted, and as a result, the number of manufacturing steps can be reduced. It is possible to reduce.

Embodiment 3. FIG. 7 is a top view corresponding to FIG. 1A and showing the structure of the electron-emitting device according to the third embodiment of the present invention. Both are comb-shaped cathode electrodes 2
The gate electrode 3 is formed on the upper surface of the glass substrate 1. A plurality of comb-shaped branch portions 2a related to the cathode electrode 2
And a plurality of comb-shaped branch portions 3a related to the gate electrode 3 are formed alternately side by side. The plurality of branch portions 2a are connected to each other by a comb-shaped trunk portion 2b related to the cathode electrode 2, and similarly, the plurality of branch portions 3a are connected to each other by a comb-shaped trunk portion 3b related to the cathode electrode 3. On the upper surface of the glass substrate 1, a plurality of CNT layers 4 are formed to cover each of the plurality of branch portions 2a, and a plurality of CNT layers 5 are formed to cover each of the plurality of branch portions 3a. ing. A small gap G1 is formed between the CNT layers 4 and 5 adjacent to each other, as in the first embodiment.
Are formed respectively.

FIGS. 8 and 9 are views corresponding to FIG. 7, showing the method of manufacturing the electron-emitting device according to the third embodiment in the order of steps. With reference to FIG. 8, first, a comb-shaped cathode electrode 2 and a gate electrode 3 are formed on the upper surface of the glass substrate 1. With reference to FIG. 9, next, a paste in which a powder of CNT is mixed with a solvent is applied to the plurality of branch portions 2a of the cathode electrode 2 and the plurality of branch portions 3a of the gate electrode 3 by a screen printing method. , A solid film is printed on the upper surface of the glass substrate 1. After that, through a drying process and a firing process, C
The NT layer 6 is formed.

Next, similarly to the step shown in FIG. 4, a glass piece is used between the branch portions 2a and 3a (for example, the central portion of both branch portions) by using a metal piece 7 having a sharp tip. The CNT layer 6 is marked until the upper surface of 1 is exposed. Thereby, the CNT layer 6
Is cut and separated into a CNT layer 4 on the cathode electrode 2 side and a CNT layer 5 on the gate electrode 3 side. After that, the CNT residue produced by the cutting is removed to obtain the structure shown in FIG. 7.

FIG. 10 is a top view showing the structure of the electron-emitting device according to the modification of the third embodiment. A cathode electrode 20 is formed instead of the cathode electrode 2 shown in FIG. 7, and a gate electrode 21 is formed instead of the gate electrode 3. A plurality of comb-shaped branch portions 20a related to the cathode electrode 20 and a plurality of comb-shaped branch portions 21 related to the gate electrode 21.
and a are formed alternately. A plurality of branches 20
a is connected to each other by a comb-shaped trunk portion 20b related to the cathode electrode 20, and similarly, a plurality of branch portions 21a are
They are connected to each other by a comb-shaped trunk portion 21b related to the cathode electrode 21. The length of the branch 20a of the cathode electrode 20 is shorter than that of the branch 2a of the cathode electrode 2, and the length of the branch 21a of the gate electrode 21 is the length of the branch 3a of the gate electrode 3.
Shorter than. The conductive CNT layer 4 is formed on the upper surface of the glass substrate 1 so as to cover only the end portion of the branch portion 20a,
The conductive CNT layer 5 is formed on the upper surface of the glass substrate 1 so as to cover only the end portions of the branch portions 21a. Figure 10
According to the structure shown in FIG. 7, compared with the structure shown in FIG. 7, the structure is simplified and the electrode material used for the cathode electrode 20 and the gate electrode 21 can be saved.

As described above, according to the electron-emitting device and the method of manufacturing the same according to the third embodiment, the cathode electrode 2 and the gate electrode 3 are formed in a comb shape, and the CNT layers 4 and 5 are formed on the branch portions 2a and 3a, respectively. By forming it, the electron emission area can be expanded and the emission current can be increased.

By making the width of the branches 2a, 3a as small as possible and increasing the number of the branches 2a, 3a,
It becomes possible to emit more electrons.

Further, in the above description, the first embodiment described above is adopted.
The case where the invention according to the third embodiment is applied based on the electron emitting device according to the above is described, but the invention is not limited to this.
Based on the electron emission device according to the second embodiment,
The invention according to the third embodiment can be applied.

Fourth Embodiment FIG. 11 is a top view showing the structure of the electron emission device according to the fourth embodiment of the present invention.
A plurality of electron-emitting devices shown in FIG. 10 are formed in a matrix on the upper surface of the glass substrate 1. However, a plurality of electron-emitting devices shown in FIG. 7 may be formed in a matrix. The plurality of cathode electrodes 20a to 20d are formed to extend in the row direction (horizontal direction of the paper surface), and the plurality of gate electrodes 21a to 21d are formed to extend in the column direction (vertical direction of the paper surface). Has been done. Cathode electrode 20a
˜20d and the gate electrodes 21a to 21d correspond to the insulating film 30.
Are crossed while being insulated from each other.

FIG. 12 is a sectional view schematically showing the structure of a matrix drive type display device having the electron emitting device shown in FIG. The electron emitting device shown in FIG. 11 is formed on the glass substrate (rear glass substrate) 1.
On the back surface of the front glass substrate 50, which is a display panel, R, G, and B phosphors 52 are formed corresponding to each electron-emitting device. An aluminum back film 53 is formed on the back surface of the front glass substrate 50 so as to cover the phosphor 52. The aluminum back film 53 functions as an anode for guiding the electrons emitted from the electron emitting device to the phosphor 52. The spacer glass 51 is bonded to each peripheral edge of the front glass substrate 50 and the rear glass substrate 1 by low melting point glass. Front glass substrate 50, rear glass substrate 1,
The outer container is constituted by the spacer glass 51 and the spacer glass 51, and the inner space thereof is kept in a vacuum.

A chip glass tube 54 is attached to the back surface of the rear glass substrate 1. A getter 55 is arranged in the chip glass tube 54. The getter 55 is provided for performing an impure gas adsorption step after the outer container is assembled in order to maintain a high vacuum inside the outer container. Also,
An anode lead wire 56 connected to the aluminum back film 53 is led out of the chip glass tube 54 to the outside of the device. From the rear glass substrate 1, the cathode electrode terminal 57 connected to the cathode electrode 20 and the gate electrode 2 are formed.
The gate electrode terminals 58 connected to No. 1 are respectively drawn out of the device. Further, the display device is provided with a power supply device, a drive circuit, and the like, which are not shown.

During operation of the display device, a predetermined high voltage is applied to the aluminum back film 53 through the anode lead wire 56. A predetermined signal voltage is applied to the cathode electrode 20 and the gate electrode 21 via the cathode electrode terminal 57 and the gate electrode terminal 58, respectively. In particular, a pulse signal corresponding to image data to be displayed is applied to the gate electrode 21. The electrons emitted from the CNT layers 4 and 5 by the electric field between the cathode electrode 20 and the gate electrode 21 are accelerated by the high voltage of the aluminum back film 53 and collide with the phosphor 52, which excites the phosphor 52. It emits light.

The gap length of the gap G1 between the CNT layer 4 and the CNT layer 5 is about several tens of μm, and the height of the spacer glass 51 is about several mm. Aluminum back film 53
When a voltage of several kV is applied to the anode, about 2/3 of the electrons generated from the electron emitting device can be attracted to the anode side,
High brightness is realized.

As described above, according to the electron emitting device according to the fourth embodiment, a plurality of the electron emitting devices according to the above-mentioned first to third embodiments are arranged in a matrix to form a matrix drive type display device. It becomes possible to apply.

Further, according to the display device of the fourth embodiment, since the electron-emitting device formed in a plane with a simple structure is adopted, the electron-emitting device having a complicated four-layer structure is adopted. The yield can be improved as compared with the conventional display device. Further, as compared with the conventional display device, the area of the electron-emitting device per pixel can be reduced, so that it can be sufficiently applied to a large screen display of about 40 and 50 inches.

Although various embodiments of the present invention have been described above, the present invention is not limited to these embodiments. Further, the cathode material is not limited to the above-mentioned CNT, but a graphite material, for example, can be applied.

[0044]

According to the first aspect of the present invention, both the cathode electrode and the gate electrode are formed on the main surface of the substrate. Therefore, it is possible to manufacture the electron-emitting device by a very simple method without causing the problem of the positional deviation which has occurred when forming the conventional electron-emitting device having the multilayer structure.

Further, according to the second aspect of the present invention, since the second electron emission layer is formed also on the gate electrode side, by switching the signal to the wiring, the gate electrode and the cathode electrode can be changed. And can be changed, and the effect of leading to the improvement of life can be expected.

According to the third aspect of the present invention, by alternately forming the plurality of cathode electrodes and the plurality of gate electrodes, the electron emission area can be expanded and the emission current can be increased. can do.

According to the fourth aspect of the present invention, both the cathode electrode and the gate electrode are formed on the main surface of the substrate. Therefore, it is possible to manufacture the electron-emitting device by a very simple method without causing the problem of the positional deviation which has occurred when forming the conventional electron-emitting device having the multilayer structure.

Further, according to the fifth aspect of the present invention, as compared with the method for manufacturing an electron-emitting device according to the seventh aspect, the step of cutting the electron-emitting layer formed in a solid film shape is performed. Since it can be omitted, the number of manufacturing steps can be reduced.

According to the sixth aspect of the present invention, the second electron emission layer is formed also on the gate electrode side as compared with the electron emission device in which the second electron emission layer is not formed. Therefore, by switching the signal to the wiring, the gate electrode and the cathode electrode can be alternated, and the effect of leading to the improvement of the life can be expected.

According to the seventh and eighth aspects of the present invention, the gap length between the first electron emitting layer and the second electron emitting layer can be made very short, and the gap portion can be shortened. It is possible to make the edges of the cut surfaces of the first and second electron-emitting layers in 3) steep. As a result, the electric field is concentrated near the edge of the first electron emission layer on the cathode electrode side, so that the voltage applied to the gate electrode can be lowered and driving at a low voltage is possible.

According to a ninth aspect of the present invention, as compared with the method for manufacturing an electron-emitting device according to the seventh aspect, the step of cutting the electron-emitting layer formed in a solid film shape is performed. Since it can be omitted, the number of manufacturing steps can be reduced.

Further, according to the tenth aspect of the present invention, since the electron-emitting device formed in a plane with a simple structure is adopted, the electron-emitting device having a complicated laminated structure is adopted. The yield can be improved as compared with the conventional display device. Further, as compared with the conventional display device, the area of the electron-emitting device per pixel can be reduced, so that it can be sufficiently applied to a large-screen display.

[Brief description of drawings]

FIG. 1 is a diagram showing a structure of an electron emission device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a method of manufacturing the electron-emitting device according to the first embodiment of the present invention in the order of steps.

FIG. 3 is a diagram showing a method of manufacturing the electron-emitting device according to the first embodiment of the present invention in the order of steps.

FIG. 4 is a diagram showing a method of manufacturing the electron-emitting device according to the first embodiment of the present invention in the order of steps.

FIG. 5 is a diagram showing a structure of an electron emission device according to a second embodiment of the present invention.

FIG. 6 is a diagram showing a structure of an electron emission device according to a modification of the second embodiment of the present invention.

FIG. 7 is a top view showing the structure of the electron emission device according to the third embodiment of the present invention.

FIG. 8 is a diagram showing a method of manufacturing the electron-emitting device according to the third embodiment of the present invention in the order of steps.

FIG. 9 is a diagram showing a method of manufacturing the electron-emitting device according to the third embodiment of the present invention in the order of steps.

FIG. 10 is a top view showing a structure of an electron emission device according to a modification of the third embodiment of the present invention.

FIG. 11 is a top view showing the structure of the electron emission device according to the fourth embodiment of the present invention.

12 is a cross-sectional view schematically showing the structure of a matrix drive type display device including the electron emitting device shown in FIG.

FIG. 13 is a cross-sectional view showing a structure of a conventional electron emitting device.

14 is a sectional view schematically showing the structure of a conventional display device including the electron emitting device shown in FIG.

[Explanation of symbols]

1 glass substrate, 2,20 cathode electrode, 3,21
Gate electrode, 4 to 6 CNT layer, 7 metal piece, 50 front glass substrate, 52 phosphor, 52 aluminum back film.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kazutoshi Morikawa             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Akihiko Hosono             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Kozaburo Shibayama             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. F-term (reference) 5C031 DD17 DD19                 5C036 EE01 EE14 EF01 EF06 EG12                       EH04 EH08

Claims (10)

[Claims] 1. A substrate, a cathode electrode formed on the main surface of the substrate, a gate electrode formed on the main surface of the substrate along with the cathode electrode, and covering the cathode electrode. An electron emission device comprising: a first electron emission layer formed on the main surface of a substrate and capable of emitting electrons by an electric field between the cathode electrode and the gate electrode. 2. A second electron emitting layer, which is formed on the main surface of the substrate so as to cover the gate electrode and faces the first electron emitting layer with a minute gap interposed between the second electron emitting layer and the second electron emitting layer. 1. The electron emission device according to 1. 3. The electron emission device according to claim 1, wherein the plurality of cathode electrodes and the plurality of gate electrodes are alternately arranged. 4. A method of: (a) preparing a substrate; (b) forming a cathode electrode and a gate electrode side by side on the main surface of the substrate; and (c) forming the cathode electrode and the gate electrode. Forming a first electron emission layer capable of emitting electrons by an electric field between them on the main surface of the substrate, covering the cathode electrode. 5. The method of manufacturing an electron emitting device according to claim 4, wherein in the step (c), the first electron emitting layer is patterned on the main surface of the substrate by a screen printing method. . 6. The method further comprising: (d) forming a second electron-emitting layer facing the first electron-emitting layer with a minute gap therebetween on the main surface of the substrate so as to cover the gate electrode. The method for manufacturing an electron-emitting device according to claim 4, further comprising: 7. The steps (c) and (d) include (cd-1) forming a third electron emission layer covering the cathode electrode and the gate electrode into a solid film on the main surface of the substrate. Forming the third electron emission layer by cutting the third electron emission layer between the cathode electrode and the gate electrode using a sharpened piece (cd-2). And a step of separating the second electron emission layer from the second electron emission layer,
A method of manufacturing an electron-emitting device according to claim 6. 8. The method of manufacturing an electron emitting device according to claim 7, wherein in the step (cd-1), the third electron emitting layer is formed by a screen printing method or a CVD method. 9. The steps (c) and (d) include a step of patterning the first and second electron emission layers on the main surface of the substrate by a screen printing method.
A method of manufacturing an electron-emitting device according to claim 6. 10. A plurality of electron-emitting devices according to claim 1, which are arranged in a matrix, and phosphors formed corresponding to each of the plurality of electron-emitting devices. A display device comprising: a display panel having the same; and an anode electrode for guiding electrons emitted from the electron emission device to the phosphor.