JP2002353159A - Processing apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To quickly conduct laser annealing by effectively utilizing an output, without having to stop the operations of an excimer laser device. SOLUTION: A set of excimer laser device EL is shared by a pair of process chambers PC1, PC2 through the use of an optical path switch PS.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a laser annealing apparatus for crystallizing an amorphous layer on a glass substrate and other processing apparatuses and methods.

[0002]

2. Description of the Related Art In a laser annealing apparatus, a laser beam from an excimer laser apparatus has a desired beam shape using a beam shaping optical system called a homogenizer and is irradiated onto a glass substrate on which an amorphous Si film is formed.
At this time, by irradiating the substrate with the laser beam while scanning the substrate, the amorphous Si film on the substrate can be uniformly polycrystallized.

[0003]

However, in the above-described laser annealing apparatus, when an unprocessed substrate is loaded into a processing chamber in a vacuum or an inert atmosphere and set on a stage, or when the substrate is processed on the stage, The excimer laser device is operated even when the completed substrate is carried out of the processing chamber. That is, since the excimer laser device is operated during the loading / unloading operation other than during the net annealing, the output of the excimer laser device is wastefully consumed, and during this time, the characteristics of the excimer laser device deteriorate.

Here, it is conceivable to stop the operation of the excimer laser device other than during the annealing. However, once the operation of the excimer laser device is stopped, a certain time is required until the output is stabilized after the restart of the operation. For this reason, when trying to obtain polycrystals of required quality, the throughput of substrate processing is lower than in the case where the excimer laser device is continuously operated.

On the other hand, the excimer laser device has a problem that it cannot be operated continuously for a long time. That is, in order to operate the excimer laser device stably, it is necessary to stop the operation for gas exchange once a day, for example, for about two hours. Furthermore, in the excimer laser device, it is necessary to periodically perform overhaul in order to maintain performance. For example, in a liquid crystal production line that performs laser annealing, it is necessary to stop the line once every three months for about one week. As described above, shutting down the operation of the excimer laser device is unavoidable for maintaining its performance, but hinders efficient operation of the production line, and it is necessary to avoid this as much as possible.

Accordingly, an object of the present invention is to provide a processing apparatus and a method capable of performing rapid laser annealing by efficiently utilizing the output of an excimer laser apparatus without unnecessarily stopping the operation of the apparatus. And

Further, the present invention provides a processing apparatus and method capable of performing efficient laser annealing without stopping a line even when the operation of the excimer laser apparatus is inevitably stopped due to maintenance or the like. The purpose is to provide.

[0008]

Means for Solving the Problems [First Processing Apparatus] In order to solve the above-mentioned problems, a first processing apparatus according to the present invention comprises:
A cassette station on which a cassette accommodating a plurality of processing objects is placed; receiving one of the plurality of processing objects; receiving a processing light;
A first processing unit for performing processing on one processing target, a second processing unit for receiving one processing target among the plurality of processing targets, and receiving a supply of processing light to perform processing on the one processing target; A transfer device that transfers a processing target between the first and second processing units and the cassette stage, and a transfer device that transfers the processing target between the cassette stage and the first processing unit. The processing light is switched to the second light path by switching an optical path from a light source.
Optical path switching means for guiding to the processing unit.

In the above apparatus, since the transfer device transfers the processing target between the first and second processing units that operate independently and the cassette stage, the transfer device transfers the cassette stage and the first processing unit. When the object to be processed is transferred between the cassette stage and the second processing unit, the processing by the processing light becomes possible on the second processing unit side, and At the time of transfer, the processing by the processing light can be performed on the first processing unit side. Here, when the object to be processed is transferred between the cassette stage and the first processing unit, the optical path switching means switches the optical path from the light source to guide the processing light to the second processing unit. The light processing throughput can be increased while sharing the light source, and the stable processing light from the light source can be efficiently used without stopping the operation of the light source.

In a specific mode of the processing apparatus, the optical path switching means transmits the processing light from the light source to the second processing unit when the processing target is transferred between the cassette stage and the second processing unit. It leads to one processing unit. In this case, the processing by the processing light is performed while alternately supplying the processing light to the first and second processing units, and in the meantime, the processing unit that is not processing during the processing uses a transfer device between the processing unit and the cassette stage. The delivery of the object becomes possible.

In a specific embodiment of the processing apparatus, each of the first and second processing units has an airtight container for accommodating a stage for supporting the object to be processed in a vacuum or an inert atmosphere. Has an entrance window for guiding the processing light into the inside, and the transport device is connected to the cassette stage and the second stage via a load lock chamber directly or indirectly connected to the first and second processing units. The processing target is transferred between the first and second processing units.
In this case, the object to be processed is processed in a vacuum or an inert atmosphere, and the proportion of the time required for the inherently accompanying transport and the accompanying decompression / gas replacement is increased, which is comparable to the processing by the processing light. However, even in such a case, the stable processing light from the light source can be efficiently used while increasing the processing throughput.

Further, in a specific embodiment of the above processing apparatus,
The light source is a gas laser device that generates laser light as the processing light, and the first and second processing units are:
The object to be processed is subjected to laser annealing using the laser light. In this case, laser annealing can be efficiently performed with stable laser light, and the throughput of laser annealing can be dramatically improved.

[First processing method] In the first processing method according to the present invention, the processing light from the light source is guided to the first processing unit by using the optical path switching means, and the processing light in the first processing unit is used. Irradiating the processing light on the processing target, and irradiating the processing light from the light source to a second processing unit using the optical path switching means to irradiate the processing light in the second processing unit. A processing object to be processed in the first processing unit, wherein another processing object is transferred between the cassette stage and the second processing unit. I do.

In the above method, when the object to be processed is processed in the first processing unit, another object to be processed is transferred between the cassette stage and the second processing unit. The light processing throughput can be increased while the operation of the light source is not stopped, and the stable processing light from the light source can be efficiently used.

[0015] In a specific embodiment of the processing method,
When the processing target is processed in the second processing unit, another processing target is transferred between the cassette stage and the first processing unit. In this case, the processing by the processing light is performed while alternately supplying the processing light to the first and second processing units, and in the meantime, the processing unit that is not processing during the processing uses a transfer device between the processing unit and the cassette stage. The delivery of the object becomes possible.

In a specific embodiment of the above-mentioned processing method,
The first and second processing units perform laser annealing on the processing object using laser light from a gas laser device as the processing light. In this case, laser annealing can be efficiently performed by stable laser light,
In addition, the throughput of laser annealing can be dramatically improved.

[Alternative Embodiment of First Processing Apparatus] In another specific aspect of the first processing apparatus, the light source includes first and second light source units each of which generates processing light. The light source switching means for selectively switching the processing light from any one of the light source units constituting the light source and guiding the processing light to the optical path switching means, and the irradiation state of the processing light from the first and second light source units to the processing target, And an irradiation adjusting unit for individually adjusting each light source unit. in this case,
Since the light source switching means selectively switches the processing light from any one of the light source units constituting the light source and guides the processed light to the optical path switching means, the operation of one of the light source units may be stopped due to the necessity of maintenance or the like. Also, it is possible to switch to the processing light from the other light source unit and continue irradiation to the processing target. That is, even if the maintenance of the light source unit or the like is performed, the processing in each processing unit does not need to be interrupted for a long time, and efficient continuous processing can be realized. Further, since the irradiation adjusting means individually adjusts the irradiation state of the processing light from the first and second light source units to the processing target for each light source unit, it is possible to appropriately prevent the fluctuation of the irradiation state of the processing light, and to achieve stable continuous light. The processing can be realized for a long time.

Further, in a specific embodiment of the processing apparatus,
The irradiation adjustment unit adjusts the irradiation characteristics of the processing light so as to cancel a change in the characteristics of the processing light that occurs when the processing light is switched by the light source switching unit. In this case, it is possible to prevent the irradiation characteristics of the processing light from being changed by the switching of the light source unit, and to prevent discontinuity and non-uniformity of the processing due to the change in the characteristics of the processing light.

[Another Embodiment of the First Processing Method] In another specific embodiment of the first processing method, the processing light from any one of the first and second light source units constituting the light source may be used. Is selectively switched to the optical path switching means, and the irradiation state of the processing light from the first and second light source units to the processing target is individually adjusted for each light source unit. In this case, since the processing light from any one of the light source units is selectively switched to be guided to the optical path switching means, it is not necessary to interrupt the processing in each processing unit for a long time even if the maintenance of the light source unit is performed, and the efficiency is improved. Continual processing can be realized. Further, since the irradiation state of the processing light is individually adjusted for each light source unit, fluctuations in the irradiation state of the processing light can be prevented, and stable continuous processing can be realized for a long period of time.

[Second processing device] A second processing device according to the present invention includes a light source having a first light source unit and a second light source unit for respectively generating processing light, and one of light sources constituting the light source. Light source switching means for selectively switching the processing light from the unit to guide the processing light to the processing target; and irradiation adjustment for individually adjusting the irradiation state of the processing light from the first and second light source units to the processing target for each light source unit. Means.

In the above apparatus, the light source switching means selectively switches the processing light from one of the light source units constituting the light source and guides the processed light to the light path switching means. Even when the light source unit is stopped, it is possible to switch to the processing light from the other light source unit and continue to irradiate the processing target. In other words, even if the maintenance of the light source unit is performed, it is not necessary to interrupt the processing by the processing light for a long time, and efficient continuous processing can be realized. Further, since the irradiation adjusting means individually adjusts the irradiation state of the processing light from the first and second light source units to the processing target for each light source unit, it is possible to appropriately prevent the fluctuation of the irradiation state of the processing light, and to achieve stable continuous light. The processing can be realized for a long time.

In a specific embodiment of the processing apparatus,
The irradiation adjustment unit adjusts the irradiation characteristics of the processing light so as to cancel a change in the characteristics of the processing light that occurs when the processing light is switched by the light source switching unit. In this case, it is possible to prevent a change in the irradiation characteristics of the processing light on the processing target due to the switching of the light source unit, and it is possible to prevent discontinuity and non-uniformity of the processing due to the change in the characteristics of the processing light.

In a specific embodiment of the processing apparatus,
The first and second light source units are gas laser devices that generate laser light as the processing light, respectively, and perform laser annealing on the processing target by selectively using laser light from each gas laser device as processing light. A processing chamber is further provided. In this case, it is possible to prevent a change in the irradiation state of the laser light during the laser annealing using the gas laser, so that the uniformity of the laser annealing can be improved. The target to be subjected to laser annealing can be, for example, a low-temperature polysilicon TFT crystal substrate.

Further, in a specific embodiment of the processing apparatus,
The irradiation adjusting means adjusts a beam profile of the processing light. In this case, stable processing can be performed by maintaining the beam profile of the processing light in a desired state.

In a specific embodiment of the processing apparatus,
The processing light guided from the light source onto the processing target is ultraviolet laser light for annealing projected as a linear beam on the processing target by a homogenizer, and the linear beam is a linear laser beam on the processing target. The beam is scanned in the short direction. In this case, uniform and stable laser annealing using a linear beam can be continuously performed for a long period of time.

In a specific embodiment of the processing apparatus,
The irradiation adjusting means adjusts the energy density of the processing light. In this case, stable processing can be performed by maintaining the energy density of the processing light in a desired state.

[Second processing method] A second processing method according to the present invention comprises a step of guiding processing light from a first light source unit to a processing target, and a processing light from the first light source unit to the processing target. Adjusting the irradiation state of the light source unit, switching the processing light from the first light source unit to the processing light from the second light source unit, and guiding the processing light to the processing target, and processing light from the second light source unit to the processing target. Adjusting the irradiation state.

In the above method, the processing light from the first light source unit is switched to the processing light from the second light source unit and guided to the processing target. Therefore, even if maintenance is performed on the first light source unit, the processing by the processing light can be performed. There is no need to interrupt for a long time, and efficient continuous processing can be realized. Further, since the irradiation state of the processing light from the first and second light source units to the processing target is adjusted, the fluctuation of the irradiation state of the processing light can be prevented, and stable continuous processing can be realized for a long time.

Further, in a specific embodiment of the above processing method,
The irradiation characteristics of the processing light are adjusted so as to cancel the change in the characteristics of the processing light that occurs when the processing light is switched. In this case, it is possible to prevent a change in the irradiation characteristics of the processing light on the processing target due to the switching of the light source unit, and it is possible to prevent discontinuity and non-uniformity of the processing due to the change in the characteristics of the processing light.

In a specific embodiment of the above-mentioned processing method,
The first and second light source units are gas laser devices that generate laser light as the processing light, respectively, and perform laser annealing on the processing target by selectively using laser light from each gas laser device as processing light. . In this case, it is possible to prevent a change in the irradiation state of the laser light during the laser annealing using the gas laser, so that the uniformity of the laser annealing can be improved.

In a specific embodiment of the processing method,
The adjusting of the irradiation state includes adjusting at least one of the beam profile and the energy density of the processing light. In this case, stable processing can be performed by maintaining the beam profile and the energy density of the processing light in desired states.

[0032]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 is a diagram schematically illustrating the overall structure of a laser annealing apparatus as a first embodiment of a processing apparatus according to the present invention. As shown in the figure, the laser annealing apparatus includes a cassette station CS having a first transfer robot R1 for disposing a pair of cassettes CA accommodating a large number of substrates and unloading substrates to be processed from the cassettes CA. First
A load lock chamber LC for temporarily receiving the substrate unloaded by the transfer robot R1 from the cassette station CS and holding the substrate, and a process chamber PC constituting a pair of processing units for performing laser annealing on the substrate
1, a transfer chamber T having a PC2 and a second transfer robot R2 for transferring the substrate in the load lock chamber LC to the process chambers PC1 and PC2.
C, an excimer laser device EL which is a light source for generating an annealing laser beam used in the process chambers PC1 and PC2, and an irradiation optical system for distributing and supplying the laser beam from the excimer laser device EL to the process chambers PC1 and PC2. IO. Here, both transfer robots R
1, R2 constitutes a transfer device for transferring substrates to and from the process chambers PC1, PC2 and the like. In addition, on the cassette station CS side of the load lock chamber LC,
A vacuum gate G1 is provided, and a vacuum gate G2 is provided between the load lock chamber LC and the transfer chamber TC. Further, vacuum gates G3 and G4 are provided between the transfer chamber TC and the process chambers PC1 and PC2, respectively.

The cassette station CS can place a pair of cassettes CA on the cassette stage ST. The transfer robot R1 is a double-hand type robot that can take out an unprocessed substrate from the cassette CA and simultaneously store the processed substrate transported from the load lock chamber LC in the cassette CA.

The load lock chamber LC is a vacuum vessel, which is not shown, but has a support member for temporarily placing a substrate received from the transfer robot R1 or the like therein, and has a reduced pressure. It is connected to a source of exhaust pump and N ₂ gas for.

A pair of process chambers PC1, PC2
Are vacuum containers having the same structure, and each include a XY stage for mounting a substrate, which will be described later. Although not shown, it is also connected to an exhaust pump for reducing pressure.

The transfer chamber TC is also a vacuum container, and is connected to an exhaust pump for reducing pressure. The transfer robot R2 is a double-hand type robot, which takes out an unprocessed substrate from the load lock chamber LC and simultaneously with any one of the process chambers PC1, P2.
The processed substrate transported from C2 can be placed in the load lock chamber LC. The transfer robot R2 is connected to one of the process chambers PC1, PC
2, the unprocessed substrate carried from the load lock chamber LC can be set in the process chambers PC1 and PC2.

The excimer laser device EL generates, for example, 308 nm laser light as a light source for processing light for laser annealing.

The irradiation optical system IO includes a shutter SU for blocking laser light from an excimer laser device EL as a light source.
An attenuator AT for adjusting the incident intensity of the laser light, and an optical path switch PS as optical path switching means for switching the laser light passing through the attenuator AT between the process chamber PC1 and the process chamber PC2.
There are provided homogenizers HS1 and HS2 for making the laser beam having passed through the optical path switch PS into a desired sectional shape and uniformly entering the substrate in each of the process chambers PC1 and PC2. Here, the optical path switch PS includes, for example, a prism-shaped reflecting member MP including a pair of mirrors and an air cylinder or the like that moves the reflecting member MP in a direction perpendicular to the incident laser light IL and parallel to the reflected laser light RL. Drive member M
D. Operate the driving member MD to reflect the reflection member MP
Is the solid line position shown in the figure, the excimer laser device EL
Is incident on the process chamber PC1 via the homogenizer HS1 on the upper side of the drawing. On the other hand, when the driving member MD is operated to set the reflecting member MP to the position indicated by the dotted line, the laser beam from the excimer laser device EL enters the process chamber PC2 via the homogenizer HS2 on the lower side of the drawing.

FIG. 2 is a view for explaining an example of the internal structure of the processing unit corresponding to the process chamber PC1.
This processing unit has an amorphous S on a glass substrate.
This is for laser annealing a substrate W on which a semiconductor thin film such as i is formed.
A homogenizer HS1 for making the laser beam AL supplied from the L through the irradiation optical system IO into a linear shape extending in the Y direction, for example, and incident on the substrate W with a predetermined illuminance, and placing the substrate W thereon and smoothing it in the XY plane And an XY stage 20 that can be translated and tilted around the X axis and the Y axis. Here, the homogenizer HS1 includes a cylindrical lens portion HSa and a focus lens portion HSb. The XY stage 20 and the stage driving device 30
Are housed in a chamber 40 that forms a stage device and maintains the periphery of the substrate W in a vacuum. The laser light from the homogenizer HS1 is incident on the substrate W through an incident window 40a provided in the chamber 40.

FIGS. 3 and 4 are flowcharts conceptually explaining the operation of the laser annealing apparatus shown in FIG. In the above description, the processing and transport of the substrate are described in an abstract manner. Further, for simplicity, it is assumed that the cassette CA of the cassette station CS contains an even number of substrates in advance.

The laser annealing apparatus shown in FIG.
When functionally divided, cassette station C
S, load lock chamber LC, process chamber PC
1. Process chamber PC2, transfer chamber T
C, and the irradiation optical system IO, the respective flows arranged side by side show respective operations and their timings.

First, the transfer robot R1 provided in the cassette station CS carries out substrate delivery for taking out unprocessed substrates in the cassette CA (steps Sa1, Sb1). In this case, since there is no processed substrate in the load lock chamber LC, the substrate is not replaced.

Next, the transfer robot R2 provided in the transfer chamber TC takes out the unprocessed substrate from the load lock chamber LC and sets the unprocessed substrate in the process chamber PC1 (steps Sb2, Sc).
1). At this time, in the irradiation optical system IO, the optical path switch PS
And the laser beam from the excimer laser device EL is made incident on the process chamber PC1 (step Se).
1).

Next, in the process chamber PC1, XY
The stage is operated to irradiate the unprocessed substrate placed on the XY stage with laser light (step Sc2).
Thereby, the amorphous S formed on the unprocessed substrate
The i-layer is laser annealed in the desired region to form a polycrystalline Si layer. At this time, the cassette station C
The transfer robot R1 provided in S carries out the substrate delivery for taking out the unprocessed substrate in the cassette CA (steps Sa2, S2).
b3). In this case, since there is no processed substrate in the load lock chamber LC, the substrate is not replaced.

Next, after the completion of the annealing process in the process chamber PC1, the transfer chamber TC
The transfer robot R2 provided in the load lock chamber L
C, the unprocessed substrate is taken out, and the unprocessed substrate is set in the process chamber PC1 (step Sb).
4, Sd1). At this time, in the irradiation optical system IO, the optical path switch PS is switched so that the laser beam from the excimer laser device EL can be made incident on the process chamber PC2 (step Se2).

Next, after the completion of the switching of the optical path switch PS, in the process chamber PC2, the XY stage is operated to irradiate the unprocessed substrate placed on the XY stage with the laser beam (step). Sd2). This allows
The amorphous Si layer formed on the unprocessed substrate is laser-annealed in a desired region to form a polycrystalline Si layer. At this time, the transfer robot R1 provided in the cassette station CS performs substrate delivery for taking out unprocessed substrates in the cassette CA (steps Sa3 and Sb5).

Next, when it is determined that there are remaining substrates in the cassette CA (steps Sa4, Sb6, Sc3, S3).
d3, Se3), returning to steps Sb2, Sc1, the transfer robot R2 provided in the transfer chamber TC takes out the processed substrate from the process chamber PC1, transfers it to the load lock chamber LC, and transfers the processed substrate from the load lock chamber LC. The unprocessed substrate is taken out and set in the process chamber PC1. At this time, in the irradiation optical system IO,
By switching the optical path switch PS, the excimer laser device E
The laser beam from L enters the process chamber PC1 (step Se1). As described above, the next step (Step Sa2,
Sb3, Sc3) and further next steps (steps Sb4, Sd1,
Se2), and the next step (steps Sa3, Sb5, Sd2)
And proceed.

On the other hand, when it is determined that there are no remaining substrates in the cassette CA (steps Sa4, Sb6, Sc3, Sd3,
Se3), the transfer robot R2 provided in the transfer chamber TC takes out the processed substrate from the process chamber PC1 and transfers it to the load lock chamber LC (Steps Sb7, Sc4). In this case, the load lock chamber L
Since there is no unprocessed substrate in C, the substrate is not replaced. Further, there is no substrate to be newly processed, and the optical path switch P
The switching of S is not performed.

Next, the transfer robot R1 provided in the cassette station CS stores the processed substrate in the cassette CA (steps Sa5 and Sb8). In this case, since there is no unprocessed substrate in the cassette CA, the substrate is not replaced. Further, laser annealing is not performed in the process chamber PC1.

Next, the transfer robot R2 provided in the transfer chamber TC takes out the processed substrate from the process chamber PC2 and transfers it to the load lock chamber LC (Steps Sb7, Sc4).

Next, the transfer robot R1 provided in the cassette station CS stores the processed substrate in the cassette CA (steps Sa6, Sb10).

FIG. 5 is a block diagram illustrating a control system of the laser annealing apparatus shown in FIG.

The control computer 80 controls the entire laser annealing apparatus. CS controller 8
1 controls the operation of the cassette station CS, that is, the operation of the transfer robot R1, while adjusting the timing based on the instruction from the control computer 80. The laser oscillator controller 82 adjusts the generation timing of the laser light from the excimer laser device EL based on an instruction from the control computer 80.

The CNC controller 83, according to the instruction of the control computer 80, controls both process chambers PC1,
The progress of annealing in PC2 is adjusted. More specifically, the CNC controller 83 includes XY stages 20, 120 provided in both process chambers PC1, PC2.
Is moved to a laser beam irradiation position, or to a delivery position for replacing a processed substrate with an unprocessed substrate. When irradiating the laser beam, the XY stages 20, 1
20 is reciprocated once in the X direction. The laser beam has half the length of the substrate in the Y direction, and the XY stages 20 and 12
In the reciprocation of 0, the stage position is shifted by half the length of the substrate. That is, laser annealing can be performed on the entire surface of the substrate by reciprocating irradiation of laser light. Further, the homogenizer H provided in both process chambers PC1 and PC2 is used.
The imaging state of S1 and HS2 is adjusted in a specific axial direction, and the beam shape and energy density are adjusted.

The sequencer unit 84 controls the load lock chamber L based on an instruction from the control computer 80.
C, transfer chamber TC, process chamber PC
1, PC2 and the actual operation of various devices such as a motor and a sensor constituting the irradiation optical system IO are controlled. More specifically, the sequencer unit 84 includes a robot controller circuit 85a for driving the transfer robot R2 provided in the transfer chamber TC, and a valve drive circuit 85b for driving various solenoid valves for appropriately operating pneumatic components. A sensor drive circuit 85c for controlling the operation of various sensors and switches and transmitting their outputs to the sequencer unit 84, and a pump drive circuit 85d for driving vacuum pumps connected to the load lock chamber LC and the like. Is provided. Here, the valve drive circuit 85b includes vacuum gates G1 to G4 operated by air pressure,
The state such as opening / closing and on / off of the optical path switch PS and the shutter SU is adjusted. Further, the sensor drive circuit 85c includes a pressure gauge provided in each chamber, a substrate presence / absence sensor provided in an appropriate position in each chamber, a cylinder sensor or a valve sensor provided in a valve operation unit including an optical path switch PS, etc., the process chambers PC1 and PC2. In addition to controlling the state of a water volume switch for cooling the like and the like, the detection output is transmitted to the sequencer unit 84.

The energy monitor drive circuit 86 controls the XY stage 20 based on an instruction from the control computer 80.
An energy monitor, which is arranged near 120 and detects the intensity of the laser light irradiated on the substrate, is controlled, and a detection signal from the energy monitor is transmitted to the control computer 80.

The attenuator drive circuit 87 controls the operation state of the attenuator AT provided in the irradiation optical system IO based on an instruction from the control computer 80, and sets the intensity of the laser beam irradiated on the substrate to a target value.

Hereinafter, the specific operation of the laser annealing apparatus shown in FIGS. 1, 2 and 5 will be described in detail with reference to the flowcharts of FIGS.

First, at the cassette station CS, a substrate is removed from the cassette CA by the transfer robot R1 and transported to a position short of the load lock chamber LC (step S1). At this time, the control computer 80 controls the operation of the transfer robot R1 via the CS controller 81. Then, the control computer 80, based on the output of the sequencer unit 84,
At the time of the substrate removal processing, it is determined whether or not a substrate exists in the cassette CA (step S2). Cassette CA
If there is a substrate in the cassette CA, the process proceeds to the next step. If there is no substrate in the cassette CA, a series of substrate processes after the substrate removal process is stopped.

Next, all the vacuum gates G1 to G4 are closed once (step S3), and an inert gas such as N ₂ is supplied to the load lock chamber LC to make the load lock chamber LC a nitrogen atmosphere of atmospheric pressure ( Step S4). Next, the vacuum gate G1 on the cassette station CS side of the load lock chamber LC is opened (Step S5). At this time, the control computer 80 controls the sequencer unit 84
Via a vacuum gate G1 to G4, to properly operate the leak valve or the like for _{N 2.}

Next, the transfer robot R1 of the cassette station CS is operated to load the substrate taken out of the cassette CA into the load lock chamber LC and transfer it onto the substrate support member provided in the load lock chamber LC. A substrate loading process is performed (Step S6). At this time, the control computer 80 appropriately controls the operation of the transfer robot R1 via the CS controller 81.

Next, the vacuum gate G1 on the cassette station CS side of the load lock chamber LC is closed (step S7), and a vacuuming process of the load lock chamber LC is started (step S8). At this time, the control computer 80 appropriately operates the vacuum gate G1, the vacuum pump, and the like via the sequencer unit 84.

In parallel with the evacuation of the load lock chamber LC in step S8, the process chamber P
The XY stage 20 for substrate processing in C1 is moved to the transfer position (step S9). At this time, the control computer 80 sends the XY
The stage 20 is operated appropriately.

In parallel with the vacuuming process, a substrate unloading process is performed at the cassette station CS to unload the substrate from the cassette CA by the transfer robot R1 (step S10). At this time, it is determined whether a substrate is present in the cassette CA (step S11), and the cassette CA
If there is a substrate in the cassette CA, the process proceeds to step S20 described later. If no substrate is present in the cassette CA, the processing of the substrate after the substrate unloading processing is stopped.

Next, a pair of vacuum gates G2 and G3 provided in the transfer chamber TC are opened to connect the load lock chamber LC and the process chamber PC1 (Step S12). Next, by operating the transfer robot R2 of the transfer chamber TC, the unprocessed substrate on the substrate support member provided in the load lock chamber LC is transferred onto the substrate processing XY stage 20 in the process chamber PC1. (Step S13). And
A pair of vacuum gates G provided in the transfer chamber TC
2. G3 is closed (step S14). At this time, the control computer 80 communicates via the sequencer unit 84
The transfer robot R2, the vacuum gates G2 and G3, the vacuum pump, and the like are appropriately operated.

Next, the evacuation process of the process chamber PC1 is started (step S15). At this time, the control computer 80 appropriately operates a vacuum pump and the like via the sequencer unit 84. At the same time, the XY stage 120 for processing the substrate in the process chamber PC1 is moved to the irradiation start position (step S16). At this time, the control computer 80 controls the CNC controller 8
The XY stage 20 is operated as appropriate via 3. Further, here, it is determined whether or not the substrate to be processed remains (step S17). At this time, the control computer 80
A predetermined sensor output is detected via the sequencer unit 84 to determine the presence or absence of a board.

If there is no remaining substrate, the subsequent series of substrate processing is stopped. If the substrate remains, N ₂ is supplied to the load lock chamber LC to load lock chamber L.
The inside of C is set to an atmospheric nitrogen atmosphere (step S18). Next, the vacuum gate G1 on the cassette station CS side of the load lock chamber LC is opened (step S19).
Next, the transfer robot R1 of the cassette station CS is operated, the substrate taken out of the cassette CA in step S10 is carried into the load lock chamber LC, and is transferred onto the substrate support member provided in the load lock chamber LC. A substrate loading process is performed (step S20). Next, the vacuum gate G1 of the load lock chamber LC is closed (step S31), and a vacuuming process of the load lock chamber LC is started (step S32). Note that the above step S18
In parallel with S32, the XY stage 120 for processing the substrate in the process chamber PC2 is moved to the transfer position (step S33). At this time, the control computer 80
XY stage 1 via the CNC controller 83
20 is operated appropriately.

In synchronization with the above-described evacuation process (step S32), a substrate unloading process is performed at the cassette station CS to unload the substrate from the cassette CA by the transfer robot R1 (step S34). At this time, it is determined whether or not a substrate exists in the cassette CA (step S35). If there is a substrate in the cassette CA, the process proceeds to step S45 described later. Processing of the substrate after the removal processing is stopped.

Next, at the stage where the evacuation processing of the load lock chamber LC is completed, the pair of vacuum gates G2 and G4 provided in the transfer chamber TC are opened so that the load lock chamber LC and the process chamber PC2 can communicate with each other. (Step S36). Next, by operating the transfer robot R2 of the transfer chamber TC, the unprocessed substrate on the substrate support member provided in the load lock chamber LC is removed.
The wafer is transported onto the XY stage 120 for substrate processing in the process chamber PC2 and is placed there (step S37).
Then, the pair of vacuum gates G2 and G4 provided in the transfer chamber TC are closed (Step S38).

The above-described cassette station CS
Of the substrate from the cassette CA to the XY stage 120 of the process chamber PC2 (Steps S18 to S38, etc.)
In parallel with this, in the process chamber PC1, a laser annealing process is performed on the unprocessed substrate on the XY stage 20 (Step S40). In this case, the control computer 80
While the XY stage 20 is reciprocatingly moved via the C controller 83, a trigger signal is sent to the laser oscillator controller 82 to irradiate the substrate with laser light. Thereby, the substrate is repeatedly irradiated with laser light, and laser annealing is performed so as to scan the entire region of the substrate.

Next, at the stage where the laser annealing process has been completed, it is determined whether or not a substrate to be processed remains (step S41).
When a series of subsequent substrate processing is stopped and there is a substrate to be processed thereafter, an optical path switch P provided in the irradiation optical system IO is used.
By driving S, the optical path of the excimer laser is switched from the process chamber PC1 to the process chamber PC2 (step S42). At this time, the control computer 80 operates the optical path switch PS via the sequencer unit 84. After the shutter SU is closed, the switching operation of the optical path switch PS is performed.

On the other hand, in step S38, the vacuum gates G2, G
At the stage when the step 4 is closed, the evacuation processing of the process chamber PC2 is started (step S43). Further, at this time, the XY stage 1 for processing the substrate in the process chamber PC2.
20 is moved to the irradiation start position (step S4
Four). At the same time, in step S35, the cassette C
If it is determined that the substrate is present in A, the load lock chamber LC by supplying an inert gas such as N ₂ into the load lock chamber LC and nitrogen atmosphere at atmospheric pressure (step S45). Next, the vacuum gate G1 of the load lock chamber LC is opened (Step S46). Next, the transfer robot R1 of the cassette station CS is operated, and the substrate taken out of the cassette CA in step S34 is loaded into the load lock chamber LC to load the substrate.
A substrate loading process for transferring onto the substrate supporting member provided in C is performed (step S47). Next, the vacuum gate G1 of the load lock chamber LC is closed (step S48), and a vacuuming process of the load lock chamber LC is started (step S49). In parallel with the above steps S45 to S49, in the process chamber PC1, the XY
The laser annealing process is completed on the unprocessed substrate on the stage, and the XY stage for processing the substrate in the process chamber PC1 is moved to the transfer position (Step S61).

In step S44, process chamber PC2
The XY stage 120 is moved to the irradiation start position, and at the stage when the optical path of the excimer laser is switched in step S42, the unprocessed substrate on the XY stage of the process chamber PC2 is subjected to laser annealing (step S62). Specifically, a laser beam is repeatedly irradiated on the substrate while the XY stage 120 is reciprocally moved, and laser annealing is gradually performed on the entire region on the substrate.

On the other hand, in synchronization with the evacuation process in step S49, a substrate unloading process is performed in the cassette station CS in which the substrate to be processed in the process chamber PC2 is extracted from the cassette CA by the transfer robot R1 (step S63). At this time, it is determined whether or not a substrate is present in the cassette CA (step S64). If a substrate is present in the cassette CA, the process proceeds to step S74 described later. A series of substrate processing after the removal processing is stopped.

At the stage when the evacuation process in step S49 is completed and the movement of the XY20 stage in the process chamber PC1 to the delivery position is completed in step S61, the pair of vacuum gates G2 and G3 provided in the transfer chamber TC are opened. (Step S65). Next, the process chamber P
It is determined whether the processed substrate remains in C1 (step S66). If the substrate does not exist, the process proceeds to step S467 described later. If the substrate exists, the transfer robot R2 of the transfer chamber TC is operated to remove the unprocessed substrate on the substrate support member provided in the load lock chamber LC. The substrate is replaced with a processed substrate on the XY20 stage in the process chamber PC1 (step S67). Then, the pair of vacuum gates G2 and G3 provided in the transfer chamber TC are closed (Step S68). Next, the evacuation process of the process chamber PC1 is started (step S69). In parallel with this, the XY stage 20 in the process chamber PC1 is moved to the irradiation start position (Step S70).

On the other hand, in the process chamber PC2, the laser annealing process is completed on the unprocessed substrate on the XY stage 120 in step S62, and before and after steps S69 and S70, the XY for processing the substrate in the process chamber PC2.
The stage 120 is moved to the delivery position (step S71). Further, it is determined whether or not a substrate to be processed remains (step S72). If there is no substrate to be processed thereafter, a series of subsequent substrate processing is stopped, and if there is a substrate to be processed thereafter. In parallel with steps S65 to S68, the optical path switch PS provided in the irradiation optical system is driven,
The optical path of the excimer laser is switched from the process chamber PC2 to the process chamber PC1 (Step S73). At this time, once the shutter SU is closed, the optical path switch P
S is switched.

In steps S49 and S65 to S68, the unprocessed substrate in the transfer chamber TC and the process chamber PC
At the stage of replacement has been completed and the processed substrate in 1, is if it is determined that the substrate in the cassette CA is present at the step S64, the large and the load lock chamber LC by supplying N ₂ to the load lock chamber LC A nitrogen atmosphere of atmospheric pressure is set (step S74). Next, the vacuum gate G1 of the load lock chamber LC is opened (Step S75). Next, the transfer robot R1 of the cassette station CS is operated to perform a substrate exchange process for exchanging the unprocessed substrate taken out of the cassette CA in step S63 with the processed substrate in the load lock chamber LC (step S76). . Next, the vacuum gate G1 of the load lock chamber LC is closed (step S77), and a vacuuming process of the load lock chamber LC is started (step S78). Note that, in parallel with steps S74 to S78, the process chamber PC1
Then, a laser annealing process is performed on the unprocessed substrate on the XY stage (step S91).

Next, at the stage where the laser annealing process has been completed in the process chamber PC1, it is determined whether or not any substrate to be processed remains (step S92). When a series of substrate processing is stopped and there is a substrate to be processed thereafter, the optical path switch PS provided in the irradiation optical system is driven to switch the optical path of the excimer laser from the process chamber PC1 to the process chamber PC2 (step S93). .

On the other hand, in synchronism with the evacuation process in step S78, a substrate unloading process is performed in the cassette station CS to unload the substrate to be processed in the process chamber PC1 from the cassette CA by the transfer robot R1 (step S163). At this time, it is determined whether or not a substrate is present in the cassette CA (step S164). If a substrate is present in the cassette CA, the process proceeds to step S174 described later,
If there is no substrate in the cassette CA, a series of substrate processing after the substrate removal processing is stopped.

In step S91, the process chamber P
In parallel with performing the laser annealing in C1, at the stage when the XY120 stage in the process chamber PC2 has completed the movement to the delivery position in step S71, the pair of vacuum gates G2 and G4 provided in the transfer chamber TC are opened. (Step S165). Next, process chamber PC
It is determined whether the processed substrate remains in Step 2 (Step S166). If the substrate does not exist, the process proceeds to step S567 described below. If the substrate exists, the transfer robot R2 of the transfer chamber TC is operated to move the unprocessed substrate in the load lock chamber LC to the XY stage in the process chamber PC2. The substrate is replaced with the above processed substrate (step S167). And the transfer chamber T
The pair of vacuum gates G2 and G3 provided in C are closed (step S168). Next, evacuation of the process chamber PC2 is started (step S169). In parallel with this, the XY stage 120 in the process chamber PC2 is moved to the irradiation start position (Step S170).

On the other hand, in the process chamber PC1, when the laser annealing process is completed on the unprocessed substrate on the XY stage in step S91 and the optical path is switched in step S93, the XY stage 20 for processing the substrate in the process chamber PC1. It is moved to the delivery position (step S171). Thereafter, the process returns to step S65 to transfer the substrate between the process chamber PC1 and the load lock chamber LC.

In steps S78 and S165 to S168, the unprocessed substrate in the transfer chamber TC and the process chamber P
At the stage of replacement has been completed and the processed substrate in the C2, if it is determined that the substrate in the cassette CA is present at step S164, the large and the load lock chamber LC by supplying N ₂ to the load lock chamber LC A nitrogen atmosphere of atmospheric pressure is set (step S174). Next, the vacuum gate G1 of the load lock chamber LC is opened (Step S175).
Next, the transfer robot R1 of the cassette station CS is operated to perform a substrate exchange process for exchanging the unprocessed substrate taken out of the cassette CA in step S163 with the processed substrate in the load lock chamber LC (step S163).
176). Next, the vacuum gate G1 of the load lock chamber LC is closed (step S177), and the evacuation processing of the load lock chamber LC is started (step S17).
8). In parallel with steps S174 to S178, in the process chamber PC2, a laser annealing process is performed on the unprocessed substrate on the XY stage (step S191).

Next, at the stage when the laser annealing process is completed, it is determined whether or not a substrate to be processed thereafter remains (step S192). If there is no substrate to be processed thereafter, a series of subsequent substrate processing is performed. Is stopped, and if there is a substrate to be processed thereafter, an optical path switch P provided in the irradiation optical system
By driving S, the optical path of the excimer laser is switched from the process chamber PC1 to the process chamber PC2 (step S193).

On the other hand, in synchronism with the evacuation process in step S178, a substrate unloading process of unloading the substrate to be processed in the process chamber PC1 from the cassette CA by the transfer robot R1 is performed in the cassette station CS (step S263). At this time, it is determined whether or not there is a substrate in the cassette CA (step S264). If there is a substrate in the cassette CA, the process returns to step S74. The subsequent series of substrate processing is stopped.

On the other hand, in the process chamber PC2, the laser annealing process is completed on the unprocessed substrate on the XY stage in step S191, and the XY stage for processing the substrate in the process chamber PC2 is moved to the transfer position (step S271). Thereafter, the process returns to step S165 to transfer the substrate between the process chamber PC2 and the load lock chamber LC.

If it is determined in step S66 that there is no substrate to be processed, the transfer chamber TC
Of the process chamber P by operating the transfer robot R2 of FIG.
The processed substrate on the XY stage 20 in C1 is transferred onto a substrate supporting member provided in the load lock chamber LC (Step S467). And the transfer chamber T
The pair of vacuum gates G2 and G3 provided in C are closed (Step S468). Next, N is loaded into the load lock chamber LC.
₂ is supplied to make the inside of the load lock chamber LC a nitrogen atmosphere of atmospheric pressure (step S474). Next, the vacuum gate G1 of the load lock chamber LC is opened (Step S475). Next, the transfer robot R1 of the cassette station CS is operated to store the processed substrate in the load lock chamber LC in the cassette CA (step S47).
6). Finally, the vacuum gate G1 of the load lock chamber LC is closed. (Step S477).

If it is determined in step S166 that there is no substrate to be processed, the transfer chamber T
By operating the transfer robot R2 of C, the processed substrate on the XY stage 120 in the process chamber PC2 is transferred onto a substrate support member provided in the load lock chamber LC (step S567). Then, the pair of vacuum gates G2 and G4 provided in the transfer chamber TC are closed (Step S568). Next, load lock chamber LC
Is supplied with an inert gas such as N ₂ to make the inside of the load lock chamber LC an atmospheric nitrogen atmosphere (step S57).
Four). Next, the vacuum gate G of the load lock chamber LC
1 is released (step S575). Next, the transfer robot R1 of the cassette station CS is operated to store the processed substrate in the load lock chamber LC in the cassette CA (step S576). Finally, the vacuum gate G1 of the load lock chamber LC is closed. (Step S
577).

In the above processing, steps S65 to S68
Corresponds to steps Sb2 and Sc1 in FIG. Step S73 corresponds to step Se1 in FIG. Steps S69, S70, and S91 correspond to step Sc2 in FIG.
Steps S74 to S77 correspond to step Sa2 in FIG.

In the above processing, step S165
Steps S168 to S168 correspond to steps Sb4 and Sd1 in FIG. Step S93 corresponds to step Se2 in FIG.
Steps S169, S170 and S191 correspond to step Sd2 in FIG.
Corresponding to Steps S174 to S177 correspond to step Sa3 in FIG.

In the above embodiment, while the annealing process is performed in one process chamber PC1, another process is performed in the other process chamber PC2 (specifically, the substrate is transferred from the load lock chamber LC to the process chamber PC2). Time for moving the substrate to the annealing start position on the XY stage in the process chamber PC2;
After the annealing process is completed, the time for moving the substrate to the substrate transfer position on the XY stage, the communication time, and the like can be executed, and a significant improvement in throughput can be achieved.

Hereinafter, a simple trial calculation regarding the throughput will be shown. For example, when the substrate size is 600 × 720 mm,
Conventional equipment (processing equipment with only one process chamber)
When annealing is used, annealing time: about 3.8 minutes (laser oscillation frequency 300 Hz, beam size 300 ×
0.45 mm, 2 rows reciprocal irradiation, overlap rate 95%,
Substrate transfer time: about 1.5 minutes. Irradiation start, substrate transfer position movement time, etc .: about 0.3 minutes. Therefore, in a configuration having only one process chamber, the time required to process one substrate is about 5.6.
Minutes.

On the other hand, if the process chamber is configured as two as in the embodiment, the time for processing one substrate is about 3.8 minutes for the annealing process, and the reflection member MP moves in the optical path switch PS in about 3.8 minutes. This is the sum of the times, that is, about 3.9 minutes. Therefore, in this case, the throughput can be improved by about 30% or more.

[Second Embodiment] Hereinafter, a processing apparatus according to a second embodiment will be described. The device of the second embodiment is a laser annealing device for a low-temperature polysilicon TFT liquid crystal substrate, and is a device in which a light source and an optical system for annealing are changed in the device portion of the first embodiment. .
In the apparatus of the first embodiment shown in FIG. 1, the cassette station CS, the load lock chamber LC, the process chambers PC1, PC2, and the transfer chamber TC are common to the apparatus of the second embodiment. In the following, parts of the light source and the optical system different from those of the apparatus of FIG. 1 will be described.

FIG. 12 is a perspective view illustrating the configuration and arrangement of an optical system in the laser annealing apparatus according to the second embodiment. As shown, the laser annealing device includes a pair of excimer laser devices EL1 and EL2 as a pair of light source units as a light source for generating a laser beam for annealing polysilicon. An irradiation optical system IO disposed between the excimer laser devices EL1 and EL2 and the pair of process chambers PC1 and PC2.
R includes a light source switch SS which is a light source switching unit for selectively switching the laser beams from both excimer laser devices EL1 and EL2 and guiding the laser light to the optical path switch PS.

The laser beam from the first excimer laser device EL1 passes through the switching mirror devices SM1 and SM2, passes through the process shutter PRS, and then passes through the light source switch S for switching the light source.
It is incident on S. The laser beam from the second excimer laser device EL1 also passes through another switching mirror device SM1, SM2, passes through the process shutter PRS, and then enters the light source switch SS for switching light sources. By operating the switching mirror device SM1, the laser beam can be guided to the power meter PM, and the outputs of both excimer laser devices EL1 and EL2 can be confirmed. Further, the switching mirror device S
By operating M2, the laser light is
A, and the optical axes of both excimer laser devices EL1 and EL2 can be easily matched before and after the light source switching for maintenance. The optical axis adjustment of both excimer laser devices EL1 and EL2 can be performed manually, but the optical axis adjustment may be performed automatically when the light source is switched by the light source switch SS.

The laser light emitted from one of the excimer laser devices EL1 and EL2 emitted from the light source switch SS is provided with an ND filter NDF for dimming, an attenuator AT for variably adjusting the light intensity, and a beam expander. The light enters the optical path switch PS via the afocal optical unit AFO functioning as a light source. Where Attenuator A
T prevents the power of the laser beam from fluctuating due to switching of the excimer laser devices EL1 and EL2. Further, the afocal optical unit AFO includes an attenuator AT
By adjusting the beam diameter or the like of the laser beam that has passed through, the fluctuation of the beam profile of the linear beam projected on the substrate W due to switching of the excimer laser devices EL1 and EL2 and changes over time are prevented. .

The reason why the afocal optical unit AFO and the attenuator AT are provided will be specifically described here. With gas lasers such as the excimer laser devices EL1 and EL2, it is generally difficult to keep the energy density and beam profile on the substrate W constant at the level required for polysilicon annealing, as compared with a solid-state laser such as a YAG laser. It is. In particular, maintenance is indispensable for the gas laser, and if the light sources, that is, the excimer laser devices EL1 and EL2 are simply switched for maintenance, a problem such as non-uniform processing occurs when switching. Against this background, the present embodiment incorporates an afocal optical unit AFO and an attenuator AT that can adjust the irradiation characteristics of the laser light as needed.

The laser light emitted from the optical path switch PS is supplied to a pair of homogenizers HS1 and HS composed of a cylindrical lens portion HSa and a focus lens portion HSb.
2, and is incident as a linear beam on the substrate W in the corresponding process chamber PC1, PC2. This linear beam is similar to that of the first embodiment,
Scanning in the short direction, the polysilicon on the substrate W can be uniformly crystallized by scanning the entire surface of the substrate W. In addition, a monitor mirror MM that can move forward and backward on the optical path is disposed below the focus lens portion HSb that constitutes each of the homogenizers HS1 and HS2.
When the monitor mirror MM is inserted on the optical path, the laser light to be incident on the substrate W is incident on the beam profiler BP. The beam profiler BP includes a line sensor camera or the like, and detects an energy distribution of a linear beam projected on the substrate W. The beam profiler BP is movable in a direction perpendicular to the optical axis. When the beam profiler BP is moved by a predetermined distance or more, the laser light reflected by the monitor mirror MM is changed to an energy monitor E located behind the beam profiler BP.
M is incident. The energy monitor EM includes a joule meter or the like, and detects the energy density of a linear beam projected on the substrate W.

FIG. 13 is a block diagram illustrating a control device for operating the optical system shown in FIG. In this figure, the switching mirror device SM, the ND filter NDF for dimming, and the like in FIG. 12 are omitted for simplicity of description.

The drive circuit 91 operates the actuator of the light source switch SS composed of a mirror and its driving member at an appropriate timing to selectively emit the laser light from one of the excimer laser devices EL1 and EL2 to the attenuator AT. Lead to. For example, the first excimer laser device E
When it becomes necessary to stop L1 for gas exchange or overhaul, the light source switch S
By operating S, the laser beam guided to the attenuator AT is switched from that of the first excimer laser device EL1 to that of the second excimer laser device EL2. Thus, the operation of the first excimer laser device EL1 can be stopped for a while to perform maintenance work, and laser light can be constantly supplied to the optical path switch PS and the homogenizers HS1 and HS2.

The drive circuit 92 controls the energy density of the laser light guided to the process chambers PC1 and PC2 by appropriately operating the stepping motor provided in the attenuator AT. For example, when the light source is switched from the first excimer laser device EL1 to the second excimer laser device EL2 by the operation of the light source switch SS, the energy density of the laser light emitted from the light source switch SS may vary greatly. By operating the attenuator AT via the drive circuit 92, the homogenizer HS
1. It is possible to keep the energy density of the laser beam guided to HS2 and the like constant.

The driving circuit 93 includes an afocal optical unit AFO including a lens element, a guide, a stepping motor, and the like.
By appropriately operating the stepping motor, the beam profile of the laser light guided to the process chambers PC1 and PC2 is adjusted. For example, when the light source is switched from the first excimer laser device EL1 to the second excimer laser device EL2 by the operation of the light source switch SS, the process chamber PC1, the homogenizer HS1, the process chamber PC1,
There is a possibility that the beam profile of the linear beam projected on the substrate W in the PC 2 fluctuates greatly. However, by appropriately operating the afocal optical unit AFO via the drive circuit 93, the beam profile projected on the substrate W is obtained. The beam profile of the linear beam can be kept almost constant.

The drive circuit 94 operates the actuator section of the optical path switch PS composed of a mirror and its driving member at an appropriate timing to switch the optical path of the laser light passing through the attenuator AT and the afocal optical section AFO, thereby switching the laser light. Is incident on one of the pair of homogenizers HS1 and HS2. For example, when the laser annealing of the substrate W is completed in the first process chamber PC1, the optical path switch PS is operated via the drive circuit 94, and the homogenizer H on the first process chamber PC1 side is operated.
The laser beam guided to S1 is transferred to the second process chamber PC.
It leads to the two-side homogenizer HS2. Thus, the first
By alternately supplying the laser light to the first and second process chambers PC1 and PC2, it is possible to prevent the output of the excimer laser device from periodically stopping due to the exchange of the substrate W or the like, or to reduce the output from the excimer laser device. It can be prevented from being thrown away unnecessarily.

The driving device 96 includes a driving member similar to the light source switch SS and the like, and a driving circuit for operating the driving member. That is, the driving device 96 can move the monitor mirror MM on the optical path based on the control signal from the control computer 99. Thus, in the interval between laser annealing and the like, a linear beam to be projected on the substrate W can be guided to the energy monitor EM, and its energy density can be appropriately detected. Further, if the beam profiler BP is arranged on the optical path between the monitor mirror MM and the energy monitor EM, a linear beam to be projected on the substrate W can be guided to the beam profiler BP to appropriately detect the beam profile. it can.

The control computer 99 includes drive circuits 91 to
94, the light source switch SS, the attenuator AT, the afocal optical unit AFO, and the optical path switch P
S and the like are appropriately operated at appropriate timing. That is, the excimer laser devices EL1 and EL2 for extracting laser light can be selectively switched by the control signal from the control computer 99, and the process chambers PC1 and PC2 to which the laser light is incident can be selectively switched. The energy density and beam profile of the laser beam incident on the substrate W in the chambers PC1 and PC2 can be monitored and adjusted to a desired state.

In the above description, the attenuator AT,
Afocal optical unit AFO, energy monitor EM, beam profiler BP, drive circuits 91 to 93, drive device 9
6. The control computer 99 and the like constitute irradiation adjusting means.

FIGS. 14 and 15 are flowcharts conceptually illustrating the operation of the laser annealing apparatus shown in FIG. 12 and the like, and correspond to the flowcharts in FIGS. 3 and 4. The basic operation of the laser annealing apparatus of the second embodiment is the same as that of the laser annealing apparatus of the first embodiment, but the operation of the irradiation optical system IOR is slightly different from that of the irradiation optical system IO of the first embodiment.

First, when the optical path switch PS is switched in step Se1, the light source switch SS can be switched as required. That is, the process chamber PC
Before and after switching to 1 and injecting laser light,
The light source unit that extracts the laser beam can be switched from one of the first and second excimer laser devices EL1 and EL2 to the other. In addition, the light source switch SS
Instead of operating the optical path switch PS every time, the optical path switch PS can be operated at a constant frequency, for example, once when the optical path switch PS is operated 1000 times.
Further, the light source switch SS can be operated at a fixed time interval, for example, once a day, in accordance with the operation timing of the optical path switch PS.

After Step Se1 and before the annealing process (Step Sc2), the attenuator AT and the afocal optical unit AFO are adjusted to adjust the irradiation state of the laser beam incident on the substrate W (Step Sc11). . Specifically, the monitor mirror MM is inserted on the optical path to monitor the energy density and beam profile of the linear beam incident on the substrate W, and when these are out of a predetermined reference range, the attenuator AT is turned off. It is operated so that the energy density falls within the reference range, or the afocal optical unit AFO is operated so that the beam profile falls within the reference range. This step Sc11 does not need to be executed for each operation of the optical path switch PS, but can be executed only when the light source switch SS is switched.

Further, at step Se2, the optical path switch PS
The light source switch SS can also be switched when switching is performed. In other words, the light source unit for extracting the laser light can be switched from one of the first and second excimer laser devices EL1 and EL2 to the other before and after switching to the process chamber PC2 and making the laser light incident. The light source switch SS can be operated at a constant frequency with respect to the optical path switch PS, or can be operated at a constant time interval in accordance with the operation timing of the optical path switch PS.

After Step Se2 and before the annealing process (Step Sd2), similarly to Step Sc11,
The irradiation state of the laser beam incident on the substrate W is adjusted by adjusting the attenuator AT and the afocal optical unit AFO (step Sc12). This step Sc12 does not need to be executed for each operation of the optical path switch PS, but can be executed only when the light source switch SS is switched.

As described above, the process chamber PC1,
The excimer laser devices EL1 and EL are used at a certain frequency or at a certain time interval using the switching timing of the PC2.
By alternately switching the two, maintenance or overhaul such as periodic gas exchange of the excimer laser device that is not used becomes possible. That is, the laser annealing apparatus can be operated almost non-stop, and the throughput of the laser annealing process for the low-temperature polysilicon TFT liquid crystal substrate can be increased. More specifically, when laser annealing is performed by an individual device composed of one excimer laser device, it is necessary to stop the system for about two days every day for gas exchange and about five days every three months for overhaul. However, when the pair of excimer laser devices EL1 and EL2 are used while being switched as in the present embodiment, about 13% (2 hours / 24 hours = about 8%,
5 days / (3 months × 30 days = 5.5%), productivity can be improved.

FIG. 16 is a flow chart for explaining in detail the former stage of step Sc11 shown in FIG. First, the drive device 96 is operated to insert the monitor mirror MM on the optical path (Step Se101).

Then, the first light source selected by the light source switch SS
Then, one of the second excimer laser devices EL1 and EL2 is oscillated (step Se102). Thereby, the laser light is incident on the energy monitor EM. In addition,
If the switching between the excimer laser devices EL1 and EL2 is not performed immediately before, it is sufficient to open the process shutter PRS (see FIG. 12).

Next, the excimer laser devices EL1 and EL2
The laser light is discarded and the oscillation state of the laser light is stabilized by continuing either one of the oscillation operations for a predetermined time (step Se103). The excimer laser device E
If the switching between L1 and EL2 has not been performed immediately before, it is not necessary to throw away the laser beam.

Next, the detection result of the energy monitor EM is processed by the control computer 99 to measure the energy of the laser beam (step Se104). More specifically, the energy density of the laser light is integrated while the appropriately determined N pulses of the laser light are incident on the energy monitor EM, and the integrated value is divided by N to calculate the average energy value.

Next, the control computer 99 determines whether or not the average energy value obtained in step Se104 is within an allowable range (step Se105). Specifically, an error is obtained by comparing the average energy value obtained in step Se104 with the irradiation reference energy, and it is determined whether or not the absolute value of the error is equal to or less than an allowable value.

When it is determined in step Se105 that the laser beam is out of the allowable range, the energy density of the laser beam passing through the attenuator AT is adjusted (step Se106). More specifically, the control computer 99 obtains a target drive amount of the attenuator AT required to reduce the error to zero from the error between the average energy value and the irradiation reference energy. Also,
The control computer 99 operates the attenuator AT by the target drive amount via the drive circuit 92 to adjust the energy density of the laser light emitted from the attenuator AT.

Next, with the attenuator AT adjusted, the apparatus waits for a predetermined time until the next measurement (step Se1).
07). Thereafter, the process returns to step Se104, and returns to step S104.
The processing from e104 to step Se107 is repeated.

On the other hand, if it is determined in step Se105 that the current value falls within the allowable range, the driving device 96 is operated to activate the monitor mirror M.
M is retracted from the optical path, and the process ends (step Se108).

FIG. 17 is a flow chart for explaining the processing performed subsequent to the processing of FIG. 16, and the latter part of step Sc11 shown in FIG. 14 will be described in detail.

First, the driving device 96 is operated to insert the monitor mirror MM on the optical path,
The beam profiler BP is moved on the optical path of the reflected light from M (Step Se201). Thereby, the laser light is incident on the beam profiler BP.

Next, the detection result of the beam profiler BP is processed by the control computer 99 to measure the profile of the laser beam (step Se204). Specifically, the intensity distribution of the linear beam incident on the beam profiler BP is determined, for example, in the short direction.

Next, the control computer 99 determines whether or not the profile obtained in step Se204 is within the allowable range (step Se205). Specifically, step S
The profile obtained in e204 is compared with the reference profile to determine a shift, and it is determined whether the shift is equal to or less than an allowable value.

If it is determined in step Se205 that the laser beam is out of the allowable range, the beam width and the divergence angle of the laser beam passing through the afocal optical unit AFO are appropriately adjusted (step Se206).
Specifically, based on the deviation of the measured profile from the reference profile, the control computer 99 uses the afocal optical section AF necessary to minimize the deviation.
A target driving amount of the lens constituting O is obtained. Further, the control computer 99 operates the afocal optical unit AFO via the drive circuit 93 by the target drive amount to adjust the profile of the laser beam to be projected on the beam profiler BP, that is, the substrate W.

Next, the apparatus waits for a predetermined time until the next measurement with the afocal optical unit AFO adjusted (step Se207). Thereafter, the process returns to step Se204, and the processes from step Se204 to step Se207 are repeated.

On the other hand, if it is determined in step Se205 that the current is within the allowable range, the driving
M and the beam profiler BP are retracted from the optical path,
The process ends (Step Se208).

FIG. 18 is a graph illustrating an example of a specific method of determining whether the profile measured in step Se205 and the like is within the allowable range. In the graph, the horizontal axis indicates the position of the beam in the short direction, and the vertical axis indicates the intensity of the beam.

The degree of inclination D on the left and right in the profile of the standard beam A (solid line) having a beam width of 0.4 mm (assuming that the intensity of the flat portion of the profile is 100%, for example, 1
The average value of a pair of left and right intervals corresponding to 0 to 90%: 140 μm in the illustrated case) is stored. The inclination degree D ′ of the profile is also measured for the measurement beam B (dotted line) to be controlled, and the relative positions of the lens elements constituting the afocal optical unit AFO are adjusted so that the inclination degrees D and D ′ coincide. Is determined, the profile of the measurement beam can be approximated to the profile of the standard beam. In the above description, only the degree of inclination of the beam has been described. However, by adjusting the positions of the components of the optical system including other optical elements, the beam width C in the short direction is adjusted by driving the afocal optical unit AFO. can do. In addition, the uniformity in the longitudinal direction also shows that the afocal optical section A
It can be adjusted by driving the FO or the like.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment.
For example, in the first embodiment, one excimer laser device EL is shared by the pair of process chambers PC1 and PC2. However, when the ratio of time required for transfer is large, one excimer laser device EL is used by three or more process chambers. The excimer laser device EL can be shared. Similarly, in the second embodiment, the two excimer laser devices EL are shared by the pair of process chambers PC1 and PC2. However, when the ratio of the time required for transfer is large, two excimer laser devices EL are used in three or more process chambers. Excimer laser device EL can be shared.

In the above embodiment, the processing apparatus of the present invention is applied to a laser annealing apparatus. However, the optical path from the light source is switched to various processing apparatuses that perform light processing using light that requires a long time. By adopting the above-described method, it is possible to achieve rapid processing, stable processing, and cost reduction.

[0132]

As is apparent from the above description, according to the first processing apparatus of the present invention, when an object to be processed is transferred between the cassette stage and the first processing unit, the optical path is changed. Since the switching means switches the optical path from the light source to guide the processing light to the second processing unit, it is possible to increase the light processing throughput while sharing a small number of light sources, and to stop the operation of the light source without stopping the operation of the light source. Can be used efficiently.

According to the first processing method of the present invention, when processing the processing object in the first processing unit, another processing is performed between the cassette stage and the second processing unit. Since the object is delivered, the throughput of light processing can be increased while sharing a small number of light sources, and stable processing light from the light source can be efficiently used without stopping the operation of the light source.

Further, according to the second processing apparatus of the present invention, even if the maintenance of the light source unit is performed, the processing by the processing light does not need to be interrupted for a long time, and efficient continuous processing is realized. Can be. Further, fluctuations in the irradiation state of the processing light can be appropriately prevented, and stable continuous processing can be realized for a long period of time.

Further, according to the second processing method of the present invention, even if maintenance is performed on the first light source unit, there is no need to interrupt the processing by the processing light for a long time, and efficient continuous processing is realized. can do. Further, it is possible to prevent a change in the irradiation state of the processing light and realize a stable continuous processing for a long period of time.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating an overall structure of a laser annealing device according to a first embodiment.

FIG. 2 is a diagram illustrating an internal structure of one processing unit.

FIG. 3 is a flowchart conceptually explaining a process in the apparatus of FIG. 1;

FIG. 4 is a flowchart conceptually explaining a process in the apparatus of FIG. 1;

FIG. 5 is a block diagram illustrating a control system of the laser annealing apparatus of FIG. 1;

FIG. 6 is a flowchart illustrating a specific operation of the apparatus shown in FIGS. 1 and 5;

FIG. 7 is a flowchart illustrating a specific operation of the device illustrated in FIGS. 1 and 5;

FIG. 8 is a flowchart illustrating a specific operation of the apparatus shown in FIGS. 1 and 5;

FIG. 9 is a flowchart illustrating a specific operation of the apparatus shown in FIGS. 1 and 5;

FIG. 10 is a flowchart illustrating a specific operation of the apparatus shown in FIGS. 1 and 5;

FIG. 11 is a flowchart illustrating a specific operation of the apparatus shown in FIGS. 1 and 5;

FIG. 12 is a perspective view illustrating a configuration and an arrangement of an optical system in a laser annealing apparatus according to a second embodiment.

FIG. 13 is a block diagram illustrating a control device that operates the optical system shown in FIG.

FIG. 14 is a flowchart conceptually explaining processing in the apparatus in FIG. 1;

FIG. 15 is a flowchart conceptually explaining processing in the apparatus in FIG. 1;

FIG. 16 is a flowchart describing in detail a preceding stage of the specifying step (step) shown in FIG. 15;

FIG. 17 is a flowchart illustrating details of a subsequent stage of the specifying step (step) illustrated in FIG. 15;

FIG. 18 is a graph illustrating a specific method for determining whether a measured profile is within an allowable range.

[Explanation of symbols]

 20, 120 Stage 30 Stage drive device 40 Chamber 40a Transmission window 80 Control computer 81 CS controller 82 Laser oscillator controller 83 CNC controller 84 Sequencer unit 86 Energy monitor drive circuit 87 Attenuator drive circuit EL Excimer laser device G1-G4 Vacuum gates HS1, HS2 Homogenizer IO Irradiation optical system LC Load lock chamber MD Driving member MP Reflecting member PC1, PC2 Process chamber PS Optical path switch R1, R2 Transfer robot TC Transfer chamber W Substrate

Claims (20)

[Claims] 1. A cassette station for mounting a cassette accommodating a plurality of processing objects, receiving one processing object from the plurality of processing objects, and receiving processing light to process the one processing object. A first processing unit that receives one of the plurality of processing objects and receives processing light to perform processing on the one processing object; and a first processing unit that performs processing on the one processing object. (2) a transfer device that transfers an object to be processed between the processing unit and the cassette stage; and an optical path from a light source when the transfer device transfers the object to be processed between the cassette stage and the first processing unit. An optical path switching means for switching and guiding the processing light to the second processing unit. 2. The light path switching means, when the transfer device transfers a processing target between the cassette stage and the second processing unit, the processing light from the light source to the first processing unit. The processing device according to claim 1, wherein the guiding is performed. 3. The first and second processing units each have an airtight container for housing a stage for supporting the processing object under a vacuum or an inert atmosphere, and each airtight container has the processing light therein. It is provided with an entrance window for guiding,
The processing object is transferred between the cassette stage and the first and second processing units via a load lock chamber directly or indirectly connected to the first and second processing units. 3. The processing apparatus according to claim 1, wherein 4. The method according to claim 1, wherein the light source is a gas laser device that generates laser light as the processing light, and the first and second processing units perform laser annealing on the processing target using the laser light. The processing device according to claim 1, wherein 5. A process for guiding processing light from a light source to a first processing unit using an optical path switching unit to irradiate a processing target in the first processing unit with the processing light, and the processing from the light source. Guiding the light to the second processing unit using the optical path switching means and irradiating the processing light on the processing target in the second processing unit, wherein the first processing unit includes: A processing method, wherein when processing a processing target, another processing target is transferred between the cassette stage and the second processing unit. 6. The processing method according to claim 5, wherein another processing target is transferred between the cassette stage and the first processing unit when the processing target is processed in the second processing unit. Processing method. 7. The apparatus according to claim 5, wherein the first and second processing units perform laser annealing on the object to be processed using laser light from a gas laser device as the processing light. The processing method according to any of the above. 8. The optical path switching means, wherein the light source comprises first and second light source units each for generating processing light, and selectively switches processing light from any of the light source units constituting the light source. A light source switching unit that guides the processing light, and an irradiation adjustment unit that individually adjusts an irradiation state of processing light from the first and second light source units to a processing target for each light source unit. The processing device according to any one of claims 1 to 4. 9. The processing apparatus according to claim 1, wherein the irradiation adjustment unit adjusts the irradiation characteristic of the processing light so as to cancel a change in the characteristic of the processing light that occurs when the processing light is switched by the light source switching unit. Item 5. A processing device according to any one of Items 4. 10. A process light from one of a first light source unit and a second light source unit constituting the light source is selectively switched to be guided to the optical path switching means. 8. The processing method according to claim 5, wherein an irradiation state of the processing light to the processing target is individually adjusted for each light source unit. 11. A light source having a first light source unit and a second light source unit for respectively generating processing light, and a light source for selectively switching processing light from one of the light source units constituting the light source to guide the processing light to a processing target. A processing apparatus comprising: a switching unit; and an irradiation adjusting unit that individually adjusts an irradiation state of processing light from the first and second light source units to a processing target for each light source unit. 12. The processing apparatus according to claim 11, wherein the irradiation adjusting unit adjusts the irradiation characteristic of the processing light so as to cancel a change in the characteristic of the processing light generated when the processing light is switched by the light source switching unit. Processing equipment. 13. The first and second light source units are gas laser devices that generate laser light as the processing light, respectively, and the laser light from each of the gas laser devices is selectively used as the processing light, and the processing target is selected. 2. The apparatus according to claim 1, further comprising a processing chamber for performing laser annealing on the substrate.
The processing apparatus according to claim 1. 14. The processing apparatus according to claim 8, wherein said irradiation adjusting means adjusts a beam profile of the processing light. 15. The processing light guided from the light source onto the processing target is an ultraviolet laser beam for annealing projected as a linear beam on the processing target by a homogenizer, and the linear beam is The scanning is performed in the short direction of the linear beam.
The processing device according to the above. 16. The processing apparatus according to claim 8, wherein said irradiation adjusting means adjusts the energy density of the processing light. 17. A step of guiding processing light from a first light source unit to a processing target, a step of adjusting an irradiation state of processing light from the first light source unit to the processing target, and A processing method comprising: switching processing light to processing light from a second light source unit to guide the processing light to a processing target; and adjusting a state of irradiation of the processing light from the second light source unit to the processing target. 18. The processing method according to claim 17, wherein the irradiation characteristic of the processing light is adjusted so as to cancel a change in the characteristic of the processing light generated when the processing light is switched. 19. The first and second light source units are gas laser devices that generate laser light as the processing light, respectively, and the laser light from each of the gas laser devices is selectively used as the processing light, and the object to be processed is provided. 19. The processing method according to claim 17, wherein laser annealing is performed on the substrate. 20. The processing method according to claim 17, wherein adjusting the irradiation state includes adjusting at least one of a beam profile and an energy density of the processing light.