JP2002344146A - High frequency module and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency module miniaturized, thinned, and integrated on the whole in a laminating step, advantageous in process and equipment. SOLUTION: The module comprises a board 1 having a multilayer structure made of a resin or a composite material of a resin mixed with a functional material powder, antenna elements 2 formed with at least one pattern on the surface of the board 1, capacitors 9 and inductors 10 made of a conductor pattern in the interior of the board 1 and at least one chip-buried layer 1b, 1d in the interior of the board 1 in which chip components 7, 8 of passive elements and semiconductor chip components 6 are buried.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency module used for a mobile communication device such as a mobile phone, a local area network, and the like.

[0002]

2. Description of the Related Art A conventional high-frequency module is disclosed in
000-269847 discloses a multilayer substrate in which chip components are mounted on the front and back surfaces and an antenna pattern is formed on the front surface.

Another conventional example is disclosed in Japanese Patent Application Laid-Open No. 2000-2000.
In 188522, a cavity is formed on the back side of the resinous multilayer substrate, a SAW filter is accommodated in the cavity, resin is filled between the SAW filter and the inner wall of the cavity, and the lower surface is filled, and the opening of the cavity is formed. There is disclosed a structure in which a lid is provided, a chip component such as a high-capacity capacitor or a semiconductor is mounted on the surface side of the multilayer substrate, and the chip component is covered with a mold resin or a case. In the case of this conventional example, the antenna is a separate component.

[0004]

In the above-described conventional high-frequency module, since a semiconductor and a high-capacitance capacitor are mounted on the surface of the multilayer substrate, they need to be protected by a case or a mold resin. There is a problem that the thickness is increased by the amount of the molding resin.
In addition, there is a problem that a case mounting process other than the multi-layer substrate laminating process, a resin molding process and equipment are required. Further, when the chip component is covered with the case, there is a problem that the chip component is vulnerable to external impact and is difficult to handle.

The present invention has been made in view of the above-mentioned problems of the prior art,
It is an object of the present invention to provide a high-frequency module which can be reduced in size and thickness and can be integrated in a laminating process, and is advantageous in terms of processes and equipment. Another object of the present invention is to provide a high-frequency module that is resistant to external impact and that is easy to handle.

[0006]

The high-frequency module according to the first aspect of the present invention comprises a substrate having a multilayer structure made of a resin or a composite material obtained by mixing a resin and a functional material powder.
An antenna element formed by at least one pattern on a surface portion of the substrate; at least one of a capacitor, an inductor, and a resonator formed by a conductor pattern inside the substrate; a chip of a passive element formed inside the substrate; It is characterized by having at least one chip embedding layer in which components and semiconductor chip components are embedded.

[0007] The high-frequency module of claim 2 is claim 1.
Wherein at least a high-capacitance capacitor and a SAW filter are provided as chip components of the passive element.

As described above, according to the first and second aspects of the present invention, not only the chip component of the passive element but also the semiconductor chip component is embedded in the multilayer substrate, so that a case and a molding resin for protecting the chip component become unnecessary. In addition, the thickness can be reduced. Also, since the antenna pattern was formed on the surface,
The whole high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. Further, since the chip components are embedded in the multilayer substrate, the chip components are resistant to external impacts and are easy to handle.

[0009] The high-frequency module of claim 3 is claim 1.
Or In 2, the chip component is embedded in a cavity formed in a resin or composite material layer, and between the periphery of the chip component and the cavity inner wall, a resin of a layer adjacent to the cavity formation layer is filled. Features.

As described above, the space between the chip component in the cavity and the inner wall of the cavity is filled by the fluidity of the adjacent resin layer or composite material layer (prepreg), so that the periphery of the chip component is filled with the resin layer. This eliminates the need for a separate step, and allows the chip components to be firmly fixed.

[0011] The high frequency module of claim 4 is claim 1.
In any one of the above items 3 to 3, a portion of the surface portion of the multilayer substrate other than the antenna element forming region is covered with a shield layer.

As described above, by providing the shield layer on the surface portion, it is possible to prevent radiation of noise to the outside and influence of external noise. In addition, since no case is required, the thickness is not reduced.

[0013]

FIG. 1 is an example of a block circuit for realizing the structure of a high-frequency module according to the present invention. This high-frequency module is of a multi-band type, in which 50 is a modulator for receiving a signal from a baseband logic circuit (not shown), 51 is a demodulator for outputting a signal to the baseband logic circuit, and 53 and 54.
Is an RFVCO (voltage controlled oscillator) with a phase lock circuit 55, 56 is an IFVCO with a phase lock circuit 57, 59 to 62 are mixers, 64 and 65 are frequency dividers, 66 and 67 are phase shifters, and 69 is a switch. Circuit, 7
Reference numerals 0 and 71 denote amplification circuits, 72 denotes a phase detector, 73 denotes a bandpass filter, and 74 denotes an LC filter. The portion surrounded by the dotted line 75 is constituted by an IC.

Reference numerals 77 to 79 denote low-pass filters;
Reference numerals 1 and 82 are RFVCOs, 83 is an amplifier circuit, 84 and 85 are low noise amplifier circuits, 86 to 90 are bandpass filters, and these bandpass filters 86 to 90 or 73 are used.
Is constituted by a surface acoustic wave filter (SAW filter). Reference numeral 92 denotes an antenna, and 93 denotes a switch circuit for switching between transmission and reception.

FIG. 2 is an exploded perspective view showing the entire structure of the high-frequency module according to the present embodiment, and FIG. 3 is a view showing the layer structure thereof. This high-frequency module includes a substrate 1 in which layers 1a to 1d made of a resin or a composite material obtained by mixing a functional material powder with a resin are integrated.

An antenna element 2 is provided on the surface of the uppermost layer 1a.
And a shield layer 3 are formed. In the next layer 1b, an antenna ground pattern 4 facing the antenna element 2 is provided.
And a wiring pattern 5, and on the wiring pattern 5, a semiconductor chip component 6 such as a transistor or a diode for forming the IC 75, the VCOs 81 and 82, or the switch circuit 93, and a SAW filter 7.
A passive element chip component such as a high-capacitance capacitor 8, a resistor or an inductor is embedded.

In the next layer 1c, a capacitor 9 and an inductor 10 are realized in a multilayer structure, and a wiring pattern 11 is formed in a predetermined layer to form an LC network.

Similarly to the layer 1b, a semiconductor chip component 6, a passive element chip component such as a SAW filter 7, a high-capacitance capacitor 8, a resistor or an inductor are connected to the lowermost layer 1d and embedded in the wiring pattern 5.

Reference numeral 12 denotes a via conductor connecting between the substrates. In some cases, a connection is made between internal conductors by providing a via hole that penetrates the entirety and providing a conductor therein.

As shown in FIG. 3, a connector 13 for connecting this module to the outside is provided on the surface.

FIG. 4 is a view showing a process of embedding the chip components 6 to 8 in the substrate 1, and shows the uppermost layer 1a and the next layer 1b.
The steps of forming the film will be described. As shown in FIG. 4A, an adhesive sheet 16 is attached to a copper foil 15, and a land pattern 17 for connecting terminals on the bottom surfaces of the chip components 6 to 8 is drilled by a laser, and solder paste is applied to the hole. Is formed by coating. Next, as shown in FIGS. 4B and 4C, the chip components 6 to 8 are mounted on the land pattern 17.

As shown in FIG. 4C, cavities 19 to 21 of the same size or slightly larger sizes as the chip components 6, 7, 8 are provided at the positions of the chip components 6, 7, 8.
Is prepared, and the cavities 19 to 21 are fitted into the chip components 6 to 8 to stack the core substrate 22 on the adhesive sheet 16 as shown in FIG. Here, the thickness of the core substrate 22 is set to the chip components 6 to 8.
It is almost the same as or more.

Next, as shown in FIG.
The prepreg 23 is overlaid on 2 and hot-pressed, and as described later, the gaps on the upper surfaces and side surfaces of the chip components 6 to 8 are filled with the prepreg by the fluidity of the prepreg 23.

Next, as shown in FIGS. 4E and 4F, a copper foil 25 is attached by an adhesive sheet 24.

After that, the upper and lower copper foils 15 and 25 are patterned by etching by a general method for a printed circuit board. In this case, the antenna element 2 and the shield layer 3 are formed by etching the upper copper foil 25, and the wiring pattern 5 serving to connect the chip components 6 to 8 is formed by etching the lower copper foil 25. You.

FIG. 5 shows the laminate 26 manufactured in the process of FIG.
FIG. 6 is a diagram showing an example of a layer structure of a layer 1c to be stacked on the substrate. In FIG. 5, reference numerals 30a to 30d denote low dielectric constant layers made of a resin or a composite material obtained by mixing a resin and a dielectric powder such as a ceramic having a low dielectric constant.
Set to about. Reference numeral 31 denotes a magnetic layer for an inductor configuration in which a resin or a magnetic powder such as a metal is mixed with a resin, and 32a and 32b each a capacitor configuration made of a composite material in which a resin or a dielectric powder such as a high dielectric constant ceramic is mixed. High dielectric constant layer, preferably having a dielectric constant of 15 to
It is set to about 30. 33a to 33d are high Q layers for a resonator configuration.

Reference numeral 11 denotes the low dielectric constant layers 30a, 30
c, an inductor conductor formed on the magnetic layer 31; 35, a high dielectric constant layer 32a;
Capacitor electrodes 36 and 37 formed so as to face each other via 32b are formed so as to face each other via the high-Q layers 33a and 33b or 33c and 33d, respectively, and a strip line conductor and a ground which constitute a resonator are formed. It is a pattern. These are integrated with the lowermost substrate 1d by hot pressing.

As the resin of each layer, epoxy resin, vinylbenzyl resin, phenol resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin (PPE) and the like are used. In particular, the high Q layers 33a-3
It is preferable to use a vinylbenzyl resin for 3d.

The magnetic powder mixed with these resins to form the magnetic layer 31 is Mn-Mg-Z
Ferrite powders such as n-based and Ni-Zn-based powders, metal magnetic powders, magnetic single crystal powders, magnetic metal powders having an insulating film, and the like are used.

The dielectric powder mixed with the resin to form the high dielectric layers 32a and 32b is, for example, Ba.
TiO ₃ —BaZrO ₃ system, BaO—TiO ₂ —Nd ₂
A ceramic dielectric powder such as an O ₃ -based or BaO-4TiO ₂ -based powder, a dielectric single crystal powder, a metal powder having a dielectric film, and the like are used.

As the dielectric powder constituting the low dielectric constant layers 30a to 30d, ceramic dielectric powder such as alumina, dielectric single crystal powder, metal powder having a dielectric film and the like are used.

The conductors such as the wiring pattern 11, the inductor conductor 34, and the capacitor electrode 35 include copper,
Silver, nickel, tin, zinc, aluminum, or the like can be used.

FIG. 6A is a diagram showing a specific layer structure in the manufacturing process. Reference numeral 26 denotes the laminate shown in FIG. 4F, 1 d denotes the lowermost layer shown in FIG. Layers 1b, 1
It is a member constituting a part of c. 40 is a semi-cured prepreg for bonding the layer 1c and the laminate 26;
41 is a via conductor. Reference numerals 30a to 30d denote the low dielectric constant layers, and at the time of lamination, 30b to 30d are made of prepreg. 31 is the magnetic layer. At the time of lamination, the laminate 26, the low dielectric constant layer 30a, the magnetic layer 3
1. The layer 1d is configured as a core substrate after full curing, and by hot pressing these together with the prepreg,
Be integrated. Also, through holes are provided for the whole as necessary, and necessary connections are made by plating inside the through holes.

As described above, not only the chip components 7 and 8 of the passive element but also the transistor, the diode,
Since the semiconductor chip component 6 such as C is also buried in the multilayer substrate 1, a case and a mold resin for protecting the chip component are not required, and the thickness can be reduced. In addition, since the antenna element 2 is formed on the surface, the entire high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. In addition, since chip components are embedded in the multilayer substrate 1, it is resistant to external impact,
Easy to handle.

Further, by providing the shield layer 3 on the surface, radiation of noise to the outside and influence of external noise can be prevented. In addition, since no case is required, the thickness is not reduced.

FIG. 6B is a cross-sectional view showing the embedding structure of the chip components 6 to 8 as a representative of the chip component 6, wherein the structure is provided between the periphery of the chip component 6 and the inner wall of the cavity 19. A resin 23a made of a prepreg of a layer adjacent to the cavity forming layer is filled and cured in a fluidized state by hot pressing.

As described above, the space between the chip component 6 in the cavity 19 and the inner wall of the cavity is filled with the portion 23a displaced from the adjacent layer, so that another step for filling the periphery of the chip component with the resin layer is unnecessary. In addition, the chip component 6 can be firmly fixed, and the mechanical strength increases.

In practicing the present invention, a configuration in which the antenna element 2 and the shield layer 3 are covered with a resin layer as a protective layer on the surface may be employed. In the present invention, other conductors, thermosetting resins, magnetic powders, and dielectric powders other than those described above can of course be used. Further, a plurality of antenna elements 2 may be provided on the surface of the substrate 1. In addition, chip component 6
A plurality of layers may be provided for embedding to # 8.

[0039]

According to the first and second aspects of the present invention, not only the chip component of the passive element but also the semiconductor chip component are embedded in the multi-layer substrate, so that the case and the molding resin for protecting the chip component become unnecessary, and the thickness is reduced. Becomes possible. Also, since the antenna pattern is formed on the surface, the whole high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. Further, since the chip components are embedded in the multilayer substrate, the chip components are resistant to external impacts and are easy to handle.

According to the third aspect, since the space between the chip component in the cavity and the inner wall of the cavity is filled by the fluidity of the adjacent resin layer or composite material layer (prepreg), the periphery of the chip component is filled with the resin layer. A separate step for filling is not required, and the chip component can be firmly fixed.

According to the fourth aspect, since the shield layer is provided on the surface portion, radiation of noise to the outside and influence of external noise can be prevented. In addition, since no case is required, the thickness is not reduced.

[Brief description of the drawings]

FIG. 1 is an example of an equivalent circuit for realizing the structure of a high-frequency module according to the present invention.

FIG. 2 is an exploded perspective view showing the entire configuration of a high-frequency module according to an embodiment of the present invention.

FIG. 3 is a diagram showing a layer structure of the present embodiment.

FIGS. 4A to 4F are process diagrams showing a part of the manufacturing process of the present embodiment.

FIG. 5 is a diagram of a part of a laminated structure according to the present embodiment.

FIG. 6A is a cross-sectional view showing a part of a layer structure in a laminating step of the present embodiment, and FIG. 6B is a cross-sectional view showing a chip component embedded portion thereof.

[Explanation of symbols]

1: substrate, 1a to 1d: layer, 2: antenna element, 3: shield layer, 4: ground pattern, 5: wiring pattern,
6: semiconductor chip component, 7: SAW filter, 8: high capacity capacitor, 9: capacitor, 10: inductor, 1
1: wiring pattern, 12: via conductor, 13: connector,
15: Copper foil, 16: Adhesive sheet, 17: Land pattern, 19 to 21: Cavity, 22: Core substrate, 23:
Prepreg, 23a: filling portion, 24: adhesive sheet, 2
5: Copper foil, 26: Laminate, 30a-30d: Low dielectric constant layer, 31: Magnetic layer, 32a, 32b: High dielectric constant layer, 33a
33d: high Q layer, 34: inductor conductor, 36: strip line conductor, 37: ground pattern, 40: prepreg, 41; via conductor, 50: modulator, 5
1: demodulator, 53, 54: RFVCO (voltage controlled oscillator), 56: IFVCO, 59-62: mixer,
64, 65: frequency divider, 66, 67: phase shifter, 6
9: switch circuit, 70, 71: amplifier circuit, 72: phase detector, 73: band pass filter, 74: LC filter, 75: IC, 77 to 79: low pass filter, 8
1, 82: RFVCO, 83: amplifier circuit, 84, 85:
Low noise amplifier circuit, 86 to 90: band pass filter, 9
2: antenna, 93: switch circuit

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] May 17, 2002 (2002.5.1)
7)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction contents]

[Document Name] Statement

Patent application title: High-frequency module and method of manufacturing the same

[Claims]

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency module used for a mobile communication device such as a cellular phone, a local area network, and the like, and a method of manufacturing the same .

[0002]

2. Description of the Related Art A conventional high-frequency module is disclosed in
000-269847 discloses a multilayer substrate in which chip components are mounted on the front and back surfaces and an antenna pattern is formed on the front surface.

Another conventional example is disclosed in Japanese Patent Application Laid-Open No. 2000-2000.
188522, a cavity is formed on the back side of the resinous multi-layer substrate, a SAW filter is accommodated in the cavity, a resin is separately filled between the SAW filter and the inner wall of the cavity and the lower surface, and an opening of the cavity is formed. There is disclosed a structure in which a lid is provided at a portion and chip components such as a high-capacity capacitor and a semiconductor are mounted on the surface side of a multilayer substrate and these chip components are covered with a mold resin or a case. In the case of this conventional example, the antenna is a separate component.

[0004]

In the above-described conventional high-frequency module, since a semiconductor and a high-capacitance capacitor are mounted on the surface of the multilayer substrate, they need to be protected by a case or a mold resin. There is a problem that the thickness is increased by the amount of the molding resin.
In addition, there is a problem that a case mounting process other than the multi-layer substrate laminating process, a resin molding process and equipment are required. Further, when the chip component is covered with the case, there is a problem that the chip component is vulnerable to external impact and is difficult to handle.

The present invention has been made in view of the above-mentioned problems of the prior art,
It is an object of the present invention to provide a high-frequency module which can be reduced in size and thickness and can be integrated in a laminating process, and is advantageous in terms of processes and equipment. Another object of the present invention is to provide a high-frequency module that is resistant to external impact and that is easy to handle, and a method for manufacturing the same.

[0006]

The high-frequency module according to the first aspect of the present invention comprises a substrate having a multilayer structure made of a resin or a composite material obtained by mixing a resin and a functional material powder.
An antenna element formed by at least one pattern on a surface portion of the substrate; at least one of a capacitor, an inductor, and a resonator formed by a conductor pattern inside the substrate; a chip of a passive element formed inside the substrate; It is characterized by having at least one chip embedding layer in which components and semiconductor chip components are embedded.

[0007] The high-frequency module of claim 2 is claim 1.
Wherein at least a high-capacitance capacitor and a SAW filter are provided as chip components of the passive element.

As described above, according to the first and second aspects of the present invention, not only the chip component of the passive element but also the semiconductor chip component is embedded in the multilayer substrate, so that a case and a molding resin for protecting the chip component become unnecessary. In addition, the thickness can be reduced. Also, since the antenna pattern was formed on the surface,
The whole high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. Further, since the chip components are embedded in the multilayer substrate, the chip components are resistant to external impacts and are easy to handle.

[0009] The high-frequency module of claim 3 is claim 1.
Or in 2, wherein the chip component is embedded in a cavity formed in the buried layer , and between a periphery of the chip component and an inner wall of the cavity, resin of a layer adjacent to the buried layer is filled. It is characterized by.

In this way, the space between the chip component in the cavity and the inner wall of the cavity is filled by the fluidity of the adjacent resin layer or composite material layer (prepreg) itself , so that the periphery of the chip component is filled with resin. A separate process for filling with a material is not required, and the chip component can be firmly fixed.

The high-frequency module according to claim 4 is the first embodiment.
In any one of the above items 3 to 3, a shield layer is provided on a portion of the surface portion of the multilayer substrate other than the antenna element forming region.
Is provided .

As described above, by providing the shield layer on the surface portion, it is possible to prevent radiation of noise to the outside and influence of external noise. In addition, since no case is required, the thickness is not reduced.

A method for manufacturing a high-frequency module according to claim 5.
Is a method for manufacturing a high-frequency module according to claim 1,
When embedding chip components in the embedded layer, resin or
Core base made of composite material mixed with resin and functional material powder
Provide a cavity in the plate and insert chip components into the cavity.
The chip component is pre-mounted on a core substrate in a cavity.
Stack the prepregs, hot press them, and use the prepregs for fluidity.
Pre-preparation between the periphery of the chip component and the inner wall of the cavity
Filled with resin and cured.
You.

Thus, the chip components in the cavity and
Adjacent resin layer or composite material between cavity inner wall
Filling by the fluidity of the bed (prepreg)
To fill the area around the chip components with resin-filled material.
This eliminates the need for a step and allows the chip components to be firmly fixed.

[0015]

FIG. 1 is an example of a block circuit for realizing the structure of a high-frequency module according to the present invention. This high-frequency module is of a multi-band type, in which 50 is a modulator for receiving a signal from a baseband logic circuit (not shown), 51 is a demodulator for outputting a signal to the baseband logic circuit, and 53 and 54.
Is an RFVCO (voltage controlled oscillator) with a phase lock circuit 55, 56 is an IFVCO with a phase lock circuit 57, 59 to 62 are mixers, 64 and 65 are frequency dividers, 66 and 67 are phase shifters, and 69 is a switch. Circuit, 7
Reference numerals 0 and 71 denote amplification circuits, 72 denotes a phase detector, 73 denotes a bandpass filter, and 74 denotes an LC filter. The portion surrounded by the dotted line 75 is constituted by an IC.

Reference numerals 77 to 79 denote low-pass filters;
1, 82 are RFVCOs, 83 is an amplifier circuit, 84 and 85 are low noise amplifier circuits, 86 to 89 are bandpass filters, and these bandpass filters 86 to 89 or 73 are used.
Is constituted by a surface acoustic wave filter (SAW filter). Reference numeral 92 denotes an antenna, and 93 denotes a switch circuit for switching between transmission and reception.

FIG. 2 is an exploded perspective view showing the entire structure of the high-frequency module according to the present embodiment, and FIG. 3 is a view showing the layer structure thereof. This high-frequency module includes a substrate 1 in which layers 1a to 1d made of a resin or a composite material obtained by mixing a functional material powder with a resin are integrated.

An antenna element 2 is provided on the surface of the uppermost layer 1a.
And a shield layer 3 are formed. In the next layer 1b, an antenna ground pattern 4 facing the antenna element 2 is provided.
And a wiring pattern 5, and on the wiring pattern 5, a semiconductor chip component 6 such as a transistor or a diode for forming the IC 75, the VCOs 81 and 82, or the switch circuit 93, and a SAW filter 7.
A passive element chip component such as a high-capacitance capacitor 8, a resistor or an inductor is embedded.

In the next layer 1c, a capacitor 9 and an inductor 10 are realized in a multilayer structure, and a wiring pattern 11 is formed on a predetermined layer to form an LC network.

Similarly to the layer 1b, a semiconductor chip component 6, a passive element chip component such as a SAW filter 7, a high-capacitance capacitor 8, a resistor or an inductor are connected to the lowermost layer 1d and embedded in the wiring pattern 5.

Reference numeral 12 denotes a via conductor connecting between the substrates. In some cases, a connection is made between internal conductors by providing a via hole that penetrates the entirety and providing a conductor therein.

As shown in FIG. 3, a connector 13 for connecting this module to the outside is provided on the surface.

FIG. 4 is a view showing a process of embedding the chip components 6 to 8 in the substrate 1, and shows the uppermost layer 1a and the next layer 1b.
The steps of forming the film will be described. As shown in FIG. 4A, an adhesive sheet 16 is attached to a copper foil 15, and a land pattern 17 for connecting terminals on the bottom surfaces of the chip components 6 to 8 is drilled by a laser, and solder paste is applied to the hole. Is formed by coating. Next, as shown in FIGS. 4B and 4C, the chip components 6 to 8 are mounted on the land pattern 17.

As shown in FIG. 4C, cavities 19 to 21 of the same size as or slightly larger than the chip components 6, 7, 8 are provided at the positions of the chip components 6, 7, 8.
Is prepared, and the cavities 19 to 21 are fitted into the chip components 6 to 8 to stack the core substrate 22 on the adhesive sheet 16 as shown in FIG. Here, the thickness of the core substrate 22 is set to the chip components 6 to 8.
It is almost the same as or more.

Next, as shown in FIG.
The prepreg 23 is overlaid on 2 and hot-pressed, and as described later, the gaps on the upper surfaces and side surfaces of the chip components 6 to 8 are filled with the prepreg by the fluidity of the prepreg 23.

Next, as shown in FIGS. 4 (E) and 4 (F), a copper foil 25 is attached with an adhesive sheet 24.

After that, the upper and lower copper foils 15 and 25 are patterned by etching by a general method for a printed circuit board. In this case, the antenna element 2 and the shield layer 3 are formed by etching the upper copper foil 25, and the wiring pattern 5 and the ground pattern serving to connect the chip components 6 to 8 by etching the lower copper foil 25. 4 are formed.

FIG. 5 shows the laminate 26 manufactured in the process of FIG.
FIG. 6 is a diagram showing an example of a layer structure of a layer 1c to be stacked on the substrate. In FIG. 5, 30a ~30d the machine to resin addition resin
A low dielectric constant layer made of a composite material in which a dielectric powder such as a low dielectric constant ceramic is mixed as the active material powder , and preferably has a dielectric constant of about 2.5 to 5. 31 is a machine for resin
32a , 3a , a magnetic layer for forming an inductor formed by mixing magnetic powder such as ceramic or metal as the active material powder.
Reference numeral 2b denotes a high dielectric constant layer for a capacitor structure composed of a composite material in which a dielectric powder such as a high dielectric constant ceramic or the like is mixed as a functional material powder with a resin.
It is set to about 5 to 30. 33a to 33d are high Q layers for a resonator configuration. The high Q layer is made of resin or resin
Induction of small dielectric loss tangent (large Q) as functional material powder
It is made of a composite material mixed with an electric powder.

Reference numeral 11 denotes the low dielectric layers 30a, 30
c, an inductor conductor formed on the magnetic layer 31; 35, a high dielectric constant layer 32a;
Capacitor electrodes 36 and 37 formed so as to face each other via 32b are formed so as to face each other via the high-Q layers 33a and 33b or 33c and 33d, respectively, and a strip line conductor and a ground which constitute a resonator are formed. It is a pattern. These are integrated with the lowermost substrate 1d by hot pressing.

As the resin of each layer, epoxy resin, vinylbenzyl resin, phenol resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin (PPE) and the like are used. In particular, the high Q layers 33a-3
It is preferable to use a vinylbenzyl resin for 3d.

The magnetic powder mixed with these resins to form the magnetic layer 31 is Mn-Mg-Z
Ferrite powders such as n-based and Ni-Zn-based powders, metal magnetic powders, magnetic single crystal powders, magnetic metal powders having an insulating film, and the like are used.

The dielectric powder to be mixed with the resin to form the high dielectric layers 32a and 32b is, for example, Ba.
TiO ₃ —BaZrO ₃ system, BaO—TiO ₂ —Nd ₂
A ceramic dielectric powder such as an O ₃ -based or BaO-4TiO ₂ -based powder, a dielectric single crystal powder, a metal powder having a dielectric film, and the like are used.

As the dielectric powder constituting the low dielectric layers 30a to 30d, ceramic dielectric powder such as alumina, dielectric single crystal powder, metal powder having a dielectric film, and the like are used. In addition, the high Q layers 33a to 33d are configured.
Dielectric powders such as silica, zirconia, etc.
Mix powder, whisker, etc. are used.

The conductors such as the wiring pattern 11, the inductor conductor 34, and the capacitor electrode 35 include copper,
Silver, nickel, tin, zinc, aluminum, or the like can be used. These conductors are used for convenience in the illustrated example.
The figure shows an example in which each is provided on each layer of a resin or a composite material.
However, the layer arrangement relationship between the conductor and each layer of resin or composite material
However, these layer arrangement relations are variously changed.
Needless to say.

FIG. 6A is a view showing a specific layer structure in the manufacturing process. Reference numeral 26 denotes the laminate shown in FIG. 4F, 1 d denotes the lowermost layer shown in FIG. Layers 1b, 1
It is a member constituting a part of c. 40 is a semi-cured prepreg for bonding the layer 1c and the laminate 26;
41 is a via conductor. Reference numerals 30a to 30d denote the low dielectric constant layers, and at the time of lamination, 30b to 30d are constituted by prepregs. 31 is the magnetic layer. At the time of lamination, the laminate 26, the low dielectric constant layer 30a, the magnetic layer 3
1. The layer 1d is configured as a core substrate after full curing, and by hot pressing these together with the prepreg,
Be integrated. Also, through holes are provided for the whole as necessary, and necessary connections are made by plating inside the through holes.

As described above, not only the chip components 7 and 8 of the passive element, but also the transistor, the diode,
Since the semiconductor chip component 6 such as C is also buried in the multilayer substrate 1, a case and a mold resin for protecting the chip component are not required, and the thickness can be reduced. In addition, since the antenna element 2 is formed on the surface, the entire high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. In addition, since chip components are embedded in the multilayer substrate 1, it is resistant to external impact,
Easy to handle.

By providing the shield layer 3 on the surface, radiation of noise to the outside and influence of external noise can be prevented. In addition, since no case is required, the thickness is not reduced.

FIG. 6B is a cross-sectional view showing the embedding structure of the chip components 6 to 8 as a representative of the chip component 6, wherein the embedded structure is provided between the periphery of the chip component 6 and the inner wall of the cavity 19. Pre-preg of layer adjacent to cavity-forming layer
The resin 23a is filled and cured in a fluidized state by a hot press.

As described above, the space between the chip component 6 in the cavity 19 and the inner wall of the cavity is filled with the portion 23a displaced from the adjacent layer, so that another step for filling the periphery of the chip component with the resin layer is unnecessary. In addition, the chip component 6 can be firmly fixed, and the mechanical strength increases.

In practicing the present invention, a configuration in which the antenna element 2 and the shield layer 3 are covered with a resin layer as a protective layer on the surface may be employed. In the present invention, other conductors, resins , magnetic powders, and dielectric powders other than those described above can of course be used. Further, a plurality of antenna elements 2 may be provided on the surface of the substrate 1. Further, a plurality of layers for embedding the chip components 6 to 8 may be provided.

[0041]

According to the first and second aspects of the present invention, not only the chip component of the passive element but also the semiconductor chip component are embedded in the multi-layer substrate, so that the case and the molding resin for protecting the chip component become unnecessary, and the thickness is reduced. Becomes possible. Also, since the antenna pattern is formed on the surface, the whole high-frequency module including the antenna can be reduced in size. Further, since the whole can be integrated by the laminating process, a case attaching process, a resin molding process and equipment are not required. Further, since the chip components are embedded in the multilayer substrate, the chip components are resistant to external impacts and are easy to handle.

[0042] According to claim 3 and 5, between the chip component and the cavity inner wall in the cavity, since the filled by the flow of the adjacent resin layer or composite layer (prepreg), a resin around the chip component This eliminates the need for a separate step of filling with a layer, and allows the chip component to be firmly fixed.

According to the fourth aspect, since the shield layer is provided on the surface portion, radiation of noise to the outside and influence of external noise can be prevented. In addition, since no case is required, the thickness is not reduced.

[Brief description of the drawings]

FIG. 1 is an example of a block circuit for realizing the structure of a high-frequency module according to the present invention.

FIG. 2 is an exploded perspective view showing the entire configuration of a high-frequency module according to an embodiment of the present invention.

FIG. 3 is a diagram showing a layer structure of the present embodiment.

FIGS. 4A to 4F are process diagrams showing a part of the manufacturing process of the present embodiment.

FIG. 5 is a diagram of a part of a laminated structure according to the present embodiment.

FIG. 6A is a cross-sectional view showing a part of a layer structure in a laminating step of the present embodiment, and FIG. 6B is a cross-sectional view showing a chip component embedded portion thereof.

[Description of Signs] 1: substrate, 1a to 1d: layer, 2: antenna element, 3: shield layer, 4: ground pattern, 5: wiring pattern,
6: semiconductor chip component, 7: SAW filter, 8: high capacity capacitor, 9: capacitor, 10: inductor, 1
1: wiring pattern, 12: via conductor, 13: connector,
15: Copper foil, 16: Adhesive sheet, 17: Land pattern, 19 to 21: Cavity, 22: Core substrate, 23:
Prepreg, 23a: filling portion, 24: adhesive sheet, 2
5: Copper foil, 26: Laminate, 30a to 30d: Low dielectric constant layer, 31: Magnetic layer, 32a , 32b: High dielectric constant layer, 33
a to 33d: high Q layer, 34: inductor conductor, 36: strip line conductor, 37: ground pattern, 40:
Prepreg, 41; via conductor, 50: modulator, 5
1: demodulator, 53, 54: RFVCO (voltage controlled oscillator), 56: IFVCO, 59-62: mixer,
64, 65: frequency divider, 66, 67: phase shifter , 69:
Switch circuits, 70 and 71: amplifier circuits, 72: phase detectors, 73: band-pass filters, 74: LC filters,
75: IC, 77 to 79: low-pass filter, 81, 8
2: RFVCO, 83: amplifier circuit, 84, 85: low noise amplifier circuit, 86 to 90: band pass filter, 92: antenna, 93: switch circuit

[Procedure amendment 2]

[Document name to be amended] Drawing

[Correction target item name] Fig. 6

[Correction method] Change

[Correction contents]

FIG. 6

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H04B 1/38 H04B 1/38 H05K 1/02 H05K 1/02 PF term (Reference) 5E338 AA03 AA16 CC05 CD23 EE13 EE24 5E346 AA12 BB04 CC08 CC21 CC32 DD02 DD12 DD32 EE01 FF01 GG15 GG22 GG28 HH24 HH32 5J021 AA09 AB06 CA06 FA17 FA24 FA26 FA32 HA05 JA07 5J045 AA05 AB05 DA10 EA08 HA03 MA07 NA01 5K011 AA06 DA27 JA01 KA18

Claims (4)

[Claims] 1. An antenna element comprising a substrate having a multilayer structure made of a resin or a composite material obtained by mixing a resin and a functional material powder, comprising: an antenna element formed by at least one pattern on a surface portion of the substrate. At least one of a capacitor, an inductor, and a resonator is formed by a conductor pattern inside a substrate, and at least one chip burying layer in which a chip component of a passive element and a semiconductor chip component are buried is provided inside the substrate. High-frequency module featuring. 2. The high-frequency module according to claim 1, further comprising at least a high-capacitance capacitor and a SAW filter as chip components of said passive element. 3. The high-frequency module according to claim 1, wherein said chip component is embedded in a cavity formed in a resin or composite material layer, and said cavity forming layer is provided between a periphery of said chip component and a cavity inner wall. A high-frequency module characterized by being filled with a resin in a layer adjacent to the high-frequency module. 4. The high-frequency module according to claim 1, wherein a portion other than an antenna element forming region on a surface portion of said multilayer substrate is covered with a shield layer.