JP2002334943A - Electronic component - Google Patents

Electronic component

Info

Publication number
JP2002334943A
JP2002334943A JP2001139107A JP2001139107A JP2002334943A JP 2002334943 A JP2002334943 A JP 2002334943A JP 2001139107 A JP2001139107 A JP 2001139107A JP 2001139107 A JP2001139107 A JP 2001139107A JP 2002334943 A JP2002334943 A JP 2002334943A
Authority
JP
Japan
Prior art keywords
thermal expansion
lid
package body
package
coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001139107A
Other languages
Japanese (ja)
Inventor
Masato Higuchi
真人 日口
Koichi Jinryo
康一 神凉
Tetsuya Oda
哲也 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2001139107A priority Critical patent/JP2002334943A/en
Publication of JP2002334943A publication Critical patent/JP2002334943A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component which reduces the rate of generating sealing defect due to a crack or the like in the electronic component, which is composed of an electronic element and a package used to house the electronic element, in which the package comprises a package body having a hollow structure and a lid body installed on the surface of the package body, so as to seal an opening in the package body and in which the package body and the lid body are bonded with a bonding material. SOLUTION: The coefficient of thermal expansion of the lid body is made larger than the coefficient of thermal expansion of the package body, and the coefficient of thermal expansion of the bonding material is made larger than the coefficient of thermal expansion of the lid body.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、電子素子をパッケ
ージに収納してなる電子部品に関する。The present invention relates to an electronic component having an electronic element housed in a package.

【０００２】[0002]

【従来の技術】従来より、弾性表面波素子や半導体素子
などの電子素子をパッケージに収納してなる電子部品が
広く用いられている。このような電子部品のパッケージ
は、中空構造を有するパッケージ本体と、パッケージ本
体の上面に設けられ、パッケージ本体の開口部を封止す
る蓋体と有している。また、このような電子部品は、電
子素子をパッケージ本体内部に実装した後、パッケージ
本体と蓋体とをロウ材などの接合材による接合、または
溶接などの方法により接合することにより構成されてい
る。2. Description of the Related Art Conventionally, electronic components in which electronic devices such as surface acoustic wave devices and semiconductor devices are housed in a package have been widely used. Such a package of an electronic component includes a package body having a hollow structure, and a lid provided on an upper surface of the package body and sealing an opening of the package body. Further, such an electronic component is configured by mounting an electronic element inside a package main body, and then bonding the package main body and the lid with a bonding material such as a brazing material or a method such as welding. .

【０００３】このようなパッケージからなる電子部品に
おいて、接合信頼性を確保するために、蓋体とパッケー
ジ本体との熱膨張係数を考慮して両者の材料を選ぶ技術
が知られている。例えば、特開平１１−１７６９６９号
公報には、セラミックスからなるパッケージ本体の熱膨
張係数と同様な熱膨張係数とするために、４０〜４５重
量％のＮｉを含有するＦｅ−Ｎｉ系合金からなる蓋体を
用い、かつ、その蓋体に３μｍ以上の厚さを有するＮｉ
メッキ層を設け、３０３〜５７３Ｋでの熱膨張係数を５
０〜５５×１０-7／Ｋの範囲にすることで、蓋体とパッ
ケージ本体との接合信頼性を高めた電子部品が開示され
ている。[0003] In an electronic component comprising such a package, there is known a technique of selecting a material of a lid and a package body in consideration of a thermal expansion coefficient thereof in order to secure bonding reliability. For example, Japanese Patent Application Laid-Open No. 11-176969 discloses a lid made of an Fe-Ni-based alloy containing 40 to 45% by weight of Ni in order to obtain a thermal expansion coefficient similar to that of a package body made of ceramics. Body and Ni having a thickness of 3 μm or more on its lid
A plating layer is provided, and the coefficient of thermal expansion at 303 to 573K is 5
An electronic component in which the joining reliability between the lid and the package body is improved by setting the range of 0 to 55 × 10 −7 / K is disclosed.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、パッケ
ージ本体と蓋体とを接合材により接合する電子部品にお
いては、引用した公報に記載されている技術を用いても
熱衝撃試験時にクラックが生じることがあった。これ
は、接合材の熱膨張係数を考慮していないため、不適当
な接合材を使った場合に、接合材とパッケージ本体、な
らびに接合材と蓋体の両者の間で熱応力が加わったこと
によるものである。However, in an electronic component in which a package body and a lid are joined by a joining material, cracks may occur during a thermal shock test even if the technique described in the cited publication is used. there were. This is because the thermal expansion coefficient of the bonding material was not taken into account, and when an inappropriate bonding material was used, thermal stress was applied between the bonding material and the package body, and between the bonding material and the lid. It is due to.

【０００５】本発明は、上述の問題を鑑みてなされたも
のであり、これらの問題を解決し、パッケージ本体と蓋
体とを接合材により接合する電子部品において、クラッ
クなどによる封止不良が起こる割合を低減した電子部品
を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and solves these problems. In an electronic component in which a package body and a lid are joined with a joining material, poor sealing due to cracks or the like occurs. It is intended to provide an electronic component with a reduced ratio.

【０００６】[0006]

【課題を解決するための手段】上記目的を達成するため
本発明の請求項１に係る電子部品は、電子素子と、電子
素子を収納したパッケージとからなり、パッケージは、
中空構造を有するパッケージ本体と、パッケージ本体の
上面に設けられ、パッケージ本体の開口部を封止する蓋
体と有し、パッケージ本体と蓋体とが接合材により接合
されている電子部品において、蓋体の熱膨張係数がパッ
ケージ本体の熱膨張係数よりも大きく、かつ、接合材の
熱膨張係数が蓋体の熱膨張係数よりも大きいことを特徴
とする電子部品である。According to a first aspect of the present invention, there is provided an electronic component comprising an electronic element and a package containing the electronic element.
An electronic component, comprising: a package body having a hollow structure; and a lid provided on an upper surface of the package body and sealing an opening of the package body, wherein the package body and the lid are joined by a joining material. An electronic component, wherein the thermal expansion coefficient of the body is larger than the thermal expansion coefficient of the package body, and the thermal expansion coefficient of the bonding material is larger than the thermal expansion coefficient of the lid.

【０００７】蓋体の熱膨張係数をパッケージ本体の熱膨
張係数よりも大きくし、かつ、接合材の熱膨張係数を蓋
体の熱膨張係数よりも大きくしたことで、クラックなど
による封止不良が起こる割合を大幅に低減することがで
きる。[0007] Since the thermal expansion coefficient of the lid is larger than the thermal expansion coefficient of the package body and the thermal expansion coefficient of the joining material is larger than the thermal expansion coefficient of the lid, poor sealing due to cracks or the like can be prevented. The rate of occurrence can be greatly reduced.

【０００８】また、本発明の請求項２に係る電子部品
は、パッケージ本体がセラミックスからなり、接合材が
エポキシ樹脂からなることを特徴とする請求項１記載の
電子部品である。The electronic component according to a second aspect of the present invention is the electronic component according to the first aspect, wherein the package body is made of ceramics and the bonding material is made of epoxy resin.

【０００９】パッケージ本体がセラミックスからなると
き、接合材としてエポキシ樹脂を用いることで封止不良
が起こる割合を最も低減することができる。When the package body is made of ceramics, the rate of occurrence of sealing failure can be reduced most by using an epoxy resin as a bonding material.

【００１０】[0010]

【発明の実施の形態】以下、本発明の実施例である電子
部品を、図１および図２に基づいて説明する。図１は、
本実施例の電子部品を示す側断面図である。図１に示す
ように、本実施例の電子部品１は、電子素子である弾性
表面波素子２と、弾性表面波素子２を収納したパッケー
ジ３とからなっている。パッケージ３は、中空構造を有
するパッケージ本体３１と、パッケージ本体３１の上面
に設けられ、パッケージ本体３１の開口部を封止する蓋
体３２とからなっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electronic component according to an embodiment of the present invention will be described with reference to FIGS. FIG.
FIG. 3 is a side sectional view showing the electronic component of the present embodiment. As shown in FIG. 1, the electronic component 1 of the present embodiment includes a surface acoustic wave element 2 as an electronic element and a package 3 containing the surface acoustic wave element 2. The package 3 includes a package body 31 having a hollow structure, and a lid 32 provided on an upper surface of the package body 31 and sealing an opening of the package body 31.

【００１１】パッケージ本体３１は、本実施例では、ア
ルミナセラミックス（熱膨張係数７．０ｐｐｍ／Ｋ）か
らなり、幅３．８０ｍｍ、奥行き３．８０ｍｍ、高さ
１．２０ｍｍ、中空部分の高さ０．７０ｍｍ、中空部分
の側壁の厚み０．４５ｍｍのものを用いている。In this embodiment, the package body 31 is made of alumina ceramics (coefficient of thermal expansion: 7.0 ppm / K), and has a width of 3.80 mm, a depth of 3.80 mm, a height of 1.20 mm, and a height of the hollow portion of 0. .70 mm, and the side wall thickness of the hollow portion is 0.45 mm.

【００１２】弾性表面波素子２は、パッケージ本体３１
の開口部の底部に設けられた電極６上に設けられた金属
バンプ５によりフリップチップ接続されている。また、
パッケージ本体３１と蓋体３２とが接合材４により接合
されている。The surface acoustic wave element 2 includes a package body 31
Are flip-chip connected by a metal bump 5 provided on an electrode 6 provided at the bottom of the opening. Also,
The package body 31 and the lid 32 are joined by the joining material 4.

【００１３】ここで本発明者は、パッケージ本体３１、
接合材４および蓋体３２の熱膨張係数と封止不良が起こ
る割合の関係を調べるため、接合材４と蓋体３２の材料
を複数用意し、それらを組み合わせる実験を行った。Here, the inventor has determined that the package body 31
In order to investigate the relationship between the coefficient of thermal expansion of the bonding material 4 and the lid 32 and the rate of occurrence of sealing failure, a plurality of materials for the bonding material 4 and the lid 32 were prepared, and an experiment of combining them was performed.

【００１４】以下に、この実験で用いたパッケージ本体
３１、接合材４および蓋体３２の材料を示す。 パッケージ本体３１： アルミナセラミックス（熱膨張係数７．０ｐｐｍ／Ｋ） 接合材４： はんだ（熱膨張係数２５ｐｐｍ／Ｋ） エポキシ樹脂（熱膨張係数２８ｐｐｍ／Ｋ） ガラス（熱膨張係数１０ｐｐｍ／Ｋ） 蓋体３２： ３７．５重量％Ｎｉ−Ｆｅ合金（熱膨張係数１．２ｐｐ
ｍ／Ｋ） ４０．０重量％Ｎｉ−Ｆｅ合金（熱膨張係数３．０ｐｐ
ｍ／Ｋ） ４２．０重量％Ｎｉ−Ｆｅ合金（熱膨張係数４．５ｐｐ
ｍ／Ｋ） ４７．０重量％Ｎｉ−Ｆｅ合金（熱膨張係数７．３ｐｐ
ｍ／Ｋ） ５０．０重量％Ｎｉ−Ｆｅ合金（熱膨張係数９．０ｐｐ
ｍ／Ｋ） ５２．０重量％Ｎｉ−Ｆｅ合金（熱膨張係数１０．１ｐ
ｐｍ／Ｋ） 洋白（熱膨張係数１６．０ｐｐｍ／Ｋ） 以下に、上記に挙げた材料を適用した場合のパッケージ
３の組み立て工程をそれぞれ説明する。 １．接合材４にはんだを用いる場合 上記に掲げた数種のＮｉ−Ｆｅ合金または洋白からなる
蓋体３２を用意し、この蓋体３２の両面に保護のためＮ
ｉ層を数μｍ設ける。また、パッケージ本体３１の蓋体
と接触する部分にメタライズ層を形成しておく。そし
て、蓋体３２の片面のパッケージ本体３１と接触する部
分に、２０〜４０μｍのはんだ層を設け、パッケージ本
体３１と蓋体３２とを組み合わせる。そして、組み合わ
せたパッケージ３を公知のリフロー炉に入れ、リフロー
処理を行い、はんだ接合および封止を行った。この接合
においては、蓋体の浮きを防ぎ、さらに接合材の厚みを
薄くするために加圧することが望ましく、荷重は１．０
〜５．０Ｎ程度が好ましい。 ２．接合材４にエポキシ樹脂を用いる場合 上記に掲げた数種のＮｉ−Ｆｅ合金または洋白からなる
蓋体３２を用意し、この蓋体３２の両面に保護のためＮ
ｉ層を数μｍ設ける。そして、蓋体３２の片面のパッケ
ージ本体３１と接触する部分に、溶剤により軟化させた
厚さ１５μｍのエポキシ樹脂層を設ける。溶剤が乾燥し
た後、パッケージ本体３１と蓋体３２とを組み合わせ、
２００℃の環境で２時間放置し、エポキシ樹脂を固化さ
せてパッケージ本体３１と蓋体３２との接合および封止
を行った。この接合においては、蓋体の浮きを防ぎ、さ
らに接合材の厚みを薄くするために加圧することが望ま
しく、荷重は１．０〜５．０Ｎ程度が好ましい。 ３．接合材４にガラスを用いる場合 上記に掲げた数種のＮｉ−Ｆｅ合金または洋白からなる
蓋体３２を用意し、この蓋体３２の少なくともパッケー
ジ本体３１と接触する部分に、適宜の方法により酸化膜
を形成させておく。この蓋体３２とパッケージ本体３１
との間にガラスをはさみ、３６０℃の環境にてガラスを
固着させて、パッケージ本体３１と蓋体３２との接合お
よび封止を行った。この接合においては、蓋体の浮きを
防ぎ、さらに接合材の厚みを薄くするために加圧するこ
とが望ましく、荷重は１．０〜５．０Ｎ程度が好まし
い。The materials of the package body 31, the bonding material 4 and the lid 32 used in this experiment will be described below. Package body 31: Alumina ceramics (coefficient of thermal expansion 7.0 ppm / K) Bonding material 4: Solder (coefficient of thermal expansion 25 ppm / K) Epoxy resin (coefficient of thermal expansion 28 ppm / K) Glass (coefficient of thermal expansion 10 ppm / K) Lid 32: 37.5 wt% Ni-Fe alloy (coefficient of thermal expansion 1.2 pp
m / K) 40.0 wt% Ni-Fe alloy (coefficient of thermal expansion 3.0 pp)
m / K) 42.0 wt% Ni-Fe alloy (coefficient of thermal expansion 4.5 pp)
m / K) 47.0 wt% Ni-Fe alloy (coefficient of thermal expansion 7.3 pp)
m / K) 50.0% by weight Ni-Fe alloy (coefficient of thermal expansion 9.0 pp)
m / K) 52.0 wt% Ni-Fe alloy (coefficient of thermal expansion 10.1p
pm / K) Nickel white (coefficient of thermal expansion: 16.0 ppm / K) The assembling steps of the package 3 when the above-mentioned materials are applied will be described below. 1. When using solder for the bonding material 4 A lid 32 made of several kinds of Ni-Fe alloys or nickel silver listed above is prepared.
An i-layer is provided with several μm. In addition, a metallized layer is formed in a portion of the package body 31 that contacts the lid. Then, a solder layer of 20 to 40 μm is provided on a portion of one side of the lid 32 that contacts the package main body 31, and the package main body 31 and the lid 32 are combined. Then, the combined package 3 was placed in a known reflow furnace, subjected to reflow treatment, and soldered and sealed. In this joining, it is desirable to apply pressure in order to prevent the lid from floating and further reduce the thickness of the joining material.
About 5.0 N is preferable. 2. When using an epoxy resin for the bonding material 4 A lid 32 made of several kinds of Ni-Fe alloys or nickel-white as described above is prepared.
An i-layer is provided with several μm. Then, a 15 μm-thick epoxy resin layer softened by a solvent is provided on a portion of one side of the lid 32 that contacts the package body 31. After the solvent is dried, the package body 31 and the lid 32 are combined,
It was left in an environment of 200 ° C. for 2 hours, and the epoxy resin was solidified to bond and seal the package body 31 and the lid 32. In this joining, it is desirable to apply pressure in order to prevent the lid from floating and further reduce the thickness of the joining material, and the load is preferably about 1.0 to 5.0 N. 3. When glass is used for the bonding material 4 A lid 32 made of several kinds of Ni-Fe alloys or nickel-plated listed above is prepared. An oxide film is formed. The lid 32 and the package body 31
And the glass was fixed in an environment of 360 ° C., and the package body 31 and the lid 32 were joined and sealed. In this joining, it is desirable to apply pressure in order to prevent the lid from floating and further reduce the thickness of the joining material, and the load is preferably about 1.0 to 5.0 N.

【００１５】上記１．〜３．のようにして作成したパッ
ケージ３のサンプルに熱衝撃試験を行い、封止不良率を
調べた。なお、接合材４として、はんだまたはエポキシ
樹脂を用いた場合は、−５５℃から１５０℃の熱衝撃を
２０００サイクル実施し、接合材４として、ガラスを用
いた場合は、−５５℃から１２５℃の熱衝撃を５００サ
イクル実施した。この熱衝撃試験の結果を図２に示す。[0015] 1. ~ 3. A sample of the package 3 prepared as described above was subjected to a thermal shock test to check a sealing failure rate. When solder or epoxy resin is used as the bonding material 4, a thermal shock of −55 ° C. to 150 ° C. is performed for 2000 cycles, and when glass is used as the bonding material 4, −55 ° C. to 125 ° C. Was subjected to 500 thermal shocks. FIG. 2 shows the results of the thermal shock test.

【００１６】図２は、熱衝撃試験後のパッケージの封止
不良率を示す表である。図２を参照すると、接合材４と
して、はんだ、エポキシ樹脂およびガラスを用いたと
き、アルミナセラミックス（熱膨張係数７．０ｐｐｍ／
Ｋ）からなるパッケージ本体３１よりも熱膨張係数が大
きい蓋体３２を用い、かつ、蓋体３２よりも熱膨張係数
が大きい接合材４を用いた場合に、封止不良率は０．１
〜０．２％と大幅に低いが、それ以外の場合には、封止
不良率はそれより高い値を示していることがわかる。FIG. 2 is a table showing the sealing failure rate of the package after the thermal shock test. Referring to FIG. 2, when solder, epoxy resin, and glass are used as the bonding material 4, alumina ceramics (coefficient of thermal expansion: 7.0 ppm /
In the case where the lid 32 having a larger coefficient of thermal expansion than the package body 31 made of K) is used and the bonding material 4 having a larger coefficient of thermal expansion than the lid 32 is used, the defective sealing rate is 0.1.
It can be seen that the sealing failure rate is much higher than that, although it is significantly lower at about 0.2%.

【００１７】以上から、蓋体３２としてパッケージ本体
３１よりも熱膨張係数が大きいものを用い、かつ、接合
材４として蓋体３２よりも熱膨張係数が大きいものを用
いた場合（図２において、＊印のついた組み合わせのと
き）に、封止不良の起こる割合が低く、好ましいことが
わかる。As described above, when the lid 32 has a larger coefficient of thermal expansion than the package body 31 and the bonding material 4 has a larger coefficient of thermal expansion than the lid 32 (see FIG. 2). In the case of a combination marked with an asterisk (*)), the rate of occurrence of sealing failure is low, indicating that it is preferable.

【００１８】また、図２を参照すると、接合材４の材料
としては、他の材料と比較し、エポキシ樹脂が最も良好
な結果を示している。したがって、パッケージ本体３１
として、アルミナセラミックスを用いた場合の接合材４
としては、エポキシ樹脂を採用するのがもっとも好まし
いことがわかる。Referring to FIG. 2, as a material of the bonding material 4, an epoxy resin shows the best result as compared with other materials. Therefore, the package body 31
As the bonding material 4 when using alumina ceramics
It is understood that it is most preferable to use an epoxy resin.

【００１９】なお、本実施例では電子素子として弾性表
面波素子を用いる例を示したが、これに限るものではな
く、例えば半導体素子などの他の電子素子を用いてもよ
いことは勿論である。また、本実施例では、弾性表面波
素子をフリップチップ接続により接合したが、これに限
るものではなく、例えばワイヤーボンディングなどによ
り接合してもよい。また、パッケージの組み立て工程も
本実施例で示した例に限るものではなく、種々の変更が
可能である。In this embodiment, an example in which a surface acoustic wave element is used as an electronic element has been described. However, the present invention is not limited to this, and it is a matter of course that another electronic element such as a semiconductor element may be used. . Further, in this embodiment, the surface acoustic wave elements are joined by flip-chip connection, but the present invention is not limited to this, and they may be joined by, for example, wire bonding. Also, the package assembling process is not limited to the example shown in the present embodiment, and various changes can be made.

【００２０】[0020]

【発明の効果】以上のように本発明によれば、蓋体の熱
膨張係数をパッケージ本体の熱膨張係数よりも大きく
し、かつ、接合材の熱膨張係数を蓋体の熱膨張係数より
も大きくしたことで、クラックなどによる封止不良が起
こる割合を大幅に低減することができる。As described above, according to the present invention, the thermal expansion coefficient of the lid is made larger than the thermal expansion coefficient of the package body, and the thermal expansion coefficient of the joining material is made larger than the thermal expansion coefficient of the lid. By increasing the size, the rate of occurrence of sealing failure due to cracks or the like can be significantly reduced.

【００２１】また、パッケージ本体がセラミックスから
なるとき、接合材としてエポキシ樹脂からなるものを用
いることで封止不良が起こる割合を最も低減することが
できる。When the package body is made of ceramics, the rate of occurrence of sealing failure can be minimized by using an epoxy resin as a bonding material.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本実施例の電子部品を示す側断面図FIG. 1 is a side sectional view showing an electronic component according to an embodiment.

【図２】熱衝撃試験後のパッケージの封止不良率を示す
表FIG. 2 is a table showing a sealing failure rate of a package after a thermal shock test.

【符号の説明】[Explanation of symbols]

１ 電子部品 ２ 弾性表面波素子 ３ パッケージ ４ 接合材 ３１ パッケージ本体 ３２ 蓋体 DESCRIPTION OF SYMBOLS 1 Electronic component 2 Surface acoustic wave element 3 Package 4 Bonding material 31 Package body 32 Lid

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】電子素子と、電子素子を収納したパッケー
ジとからなり、パッケージは、中空構造を有するパッケ
ージ本体と、パッケージ本体の上面に設けられ、パッケ
ージ本体の開口部を封止する蓋体と有し、パッケージ本
体と蓋体とが接合材により接合されている電子部品にお
いて、 蓋体の熱膨張係数がパッケージ本体の熱膨張係数よりも
大きく、かつ、接合材の熱膨張係数が蓋体の熱膨張係数
よりも大きいことを特徴とする電子部品。The package includes an electronic element and a package containing the electronic element. The package includes a package body having a hollow structure, and a lid provided on an upper surface of the package body and sealing an opening of the package body. An electronic component having a package body and a lid joined by a joining material, wherein the thermal expansion coefficient of the lid is larger than the thermal expansion coefficient of the package body, and the thermal expansion coefficient of the joining material is An electronic component having a larger thermal expansion coefficient. 【請求項２】パッケージ本体がセラミックスからなり、
接合材がエポキシ樹脂からなることを特徴とする請求項
１記載の電子部品。2. The package body is made of ceramics.
2. The electronic component according to claim 1, wherein the bonding material is made of an epoxy resin.
JP2001139107A 2001-05-09 2001-05-09 Electronic component Pending JP2002334943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001139107A JP2002334943A (en) 2001-05-09 2001-05-09 Electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001139107A JP2002334943A (en) 2001-05-09 2001-05-09 Electronic component

Publications (1)

Publication Number Publication Date
JP2002334943A true JP2002334943A (en) 2002-11-22

Family

ID=18985940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001139107A Pending JP2002334943A (en) 2001-05-09 2001-05-09 Electronic component

Country Status (1)

Country Link
JP (1) JP2002334943A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073711A (en) * 2005-09-06 2007-03-22 Nippon Telegr & Teleph Corp <Ntt> Airtight sealing package and optical submodule
JPWO2016111281A1 (en) * 2015-01-07 2017-10-12 株式会社村田製作所 Ceramic substrate, electronic component, and method for manufacturing ceramic substrate
WO2020071452A1 (en) * 2018-10-05 2020-04-09 Ａｇｃ株式会社 Window material and optical package
WO2022004390A1 (en) * 2020-06-29 2022-01-06 日本電気硝子株式会社 Lid member, method for manufacturing lid member, package, and method for manufacturing package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073711A (en) * 2005-09-06 2007-03-22 Nippon Telegr & Teleph Corp <Ntt> Airtight sealing package and optical submodule
JPWO2016111281A1 (en) * 2015-01-07 2017-10-12 株式会社村田製作所 Ceramic substrate, electronic component, and method for manufacturing ceramic substrate
WO2020071452A1 (en) * 2018-10-05 2020-04-09 Ａｇｃ株式会社 Window material and optical package
JPWO2020071452A1 (en) * 2018-10-05 2021-09-02 Ａｇｃ株式会社 Window material, optical package
JP7435460B2 (en) 2018-10-05 2024-02-21 Ａｇｃ株式会社 Window materials, optical packages
WO2022004390A1 (en) * 2020-06-29 2022-01-06 日本電気硝子株式会社 Lid member, method for manufacturing lid member, package, and method for manufacturing package

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