JP2002329651A - Aligner, method of manufacturing aligner and method of manufacturing micro-device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner which can measure an amount of light applied on a photosensitive substrate through a projection optical system rapidly and accurately and can adjust a light amount highly precisely and rapidly based on the measurement result even after the aligner is manufactured, and a manufacturing method of the same. SOLUTION: A space image measurement device 24 for measuring an amount of light applied on a plate P through each of projection optical system units PL1 and PL5 constituting a projection optical system PL and a dimming filter 7 for dimming light from a light source 1 during measurement using the space image measurement device 24 are provided. Dimming filters 13b to 13f and variable dimming filters 14b to 14f for adjusting a dispersion in the amount of light via each of the projection optical system units PL1 to PL5 are provided between each of projection ends 11b to 11f of a light guide 11 and a mask M.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a manufacturing process of a semiconductor device, a liquid crystal display element, an imaging element, a thin film magnetic head, and other micro devices, a method of manufacturing the exposure apparatus, and an exposure apparatus. The present invention relates to a method for manufacturing a micro device used.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been frequently used as display elements for word processors, personal computers, televisions and the like. In particular, a liquid crystal display panel is indispensable as a display element in a notebook type word processor or a notebook type personal computer where portability is important. In recent years, liquid crystal display panels exceeding 20 inches have been put to practical use. However, since the liquid crystal display panels do not require much installation space, they are often used as televisions for general home use. A liquid crystal display panel is manufactured by patterning a transparent thin-film electrode into a desired shape on a glass substrate (plate) by a photolithography technique. As an apparatus for the photolithography process, a projection exposure apparatus that projects and exposes an original pattern formed on a mask onto a plate coated with a photosensitive agent such as a photoresist through a projection optical system is used.

In recent years, a large area of a liquid crystal display panel has been demanded, and accordingly, a projection exposure apparatus used in a photolithography process has been required to enlarge an exposure area. As an exposure device that enlarges the exposure area, the image of the pattern formed on the mask is transferred onto the plate while moving the mask and plate relative to the projection optical system, A so-called step-and-scan type exposure apparatus has been devised in which a mask and a photosensitive substrate are moved a predetermined distance in a direction perpendicular to each other to perform scanning exposure again. In order to further enlarge the exposure area, there has been proposed an exposure apparatus having a so-called multi-lens type projection optical system in which a projection optical system is constituted by a plurality of projection optical units.

[0004]

By the way, the exposure apparatus having the multi-lens type projection optical system described above can transfer a large area pattern only by increasing the number of projection optical units whose production cost is low. There are advantages. However, in an exposure apparatus that includes a plurality of projection optical units as the projection optical system, it is necessary to adjust the amount of light irradiated on the plate via each projection optical unit so as to be substantially equal. This is because if the amount of light radiated onto the plate via each projection optical unit varies between the projection optical units, the line width of the pattern formed differs depending on the position of the plate.

This adjustment is performed at the time of manufacturing the exposure apparatus. However, as the number of projection optical units increases, the amount of light irradiated on the plate via each projection optical unit and the adjustment of each projection optical unit are adjusted. Because it takes time,
The time required for manufacturing the exposure apparatus has been prolonged, which has contributed to an increase in the manufacturing cost of the exposure apparatus. Also, the exposure apparatus is manufactured by being adjusted with high precision so that the amount of light irradiated on the plate via each projection optical unit becomes uniform. It is conceivable that the change causes a variation in the amount of light irradiated on the plate via each projection optical unit. Therefore, even when such a variation in the light amount occurs, it is required that the light amount can be easily adjusted, for example, when performing periodic maintenance.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to quickly and accurately measure the amount of light applied to a photosensitive substrate via a projection optical system, and to perform measurement based on the measurement result. An object of the present invention is to provide an exposure apparatus capable of adjusting the amount of light with high accuracy and speed and even after manufacturing the exposure apparatus, and a method of manufacturing the same. Another object of the present invention is to provide a method for manufacturing a micro device manufactured by forming a fine pattern using the above exposure apparatus.

[0007]

In order to solve the above-mentioned problems, an exposure apparatus according to a first aspect of the present invention comprises a light source (1)
An exposure apparatus that irradiates light emitted from a mask (M) onto a mask (M) and transfers a pattern (DP) formed on the mask (M) to a photosensitive substrate (P). (M), a dimming member (7) that is arranged to be inclined with respect to an optical path between the light source (1) and diminishes light emitted from the light source (1), and light transmitted through the dimming member (7). And a wavelength selecting member (6) for selecting a light having a predetermined wavelength from the above (corresponding to claim 1). According to the present invention, since the light emitted from the light source is dimmed by the dimming member arranged to be inclined with respect to the optical path, light having a predetermined wavelength is selected by the wavelength selecting member. It is possible to prevent the influence of a decrease in optical characteristics (for example, a change in light amount) due to multiple reflections between the dimming member and the wavelength selecting member when measuring the amount of light applied to the photosensitive substrate.
In order to solve the above-mentioned problem, an exposure apparatus according to a second aspect of the present invention irradiates a mask (M) with light emitted from a light source (1) to irradiate a pattern formed on the mask (M). In an exposure apparatus for transferring light onto a photosensitive substrate, a dimming unit (a dimming unit) which is arranged to be inclined with respect to an optical path between the light source (1) and the mask (M) and diminishes light emitted from the light source ( 7, 13b to 13f, 14b to 14f), the light source (1), and the dimming means (7, 13b to 13f, 1
4b to 14f), and a wavelength selection member (6) for selecting light having a predetermined wavelength from the light from the light source (1).
Corresponding to). According to the present invention, the light of a predetermined wavelength is selected by the wavelength selecting member and then guided to the light reducing means, and the energy of the light selected by the wavelength selecting means is changed to the energy of the light incident on the wavelength selecting means. Since it is weaker than the energy, it is possible to prevent damage to the dimming means itself. In order to solve the above problem, an exposure apparatus according to a third aspect of the present invention irradiates a mask (M) with light emitted from a light source (1) to form a pattern ( In an exposure apparatus for transferring (DP) onto a photosensitive substrate (P), the exposure device is arranged to be inclined with respect to an optical path between the light source (1) and the mask (M), and is emitted from the light source (1). Dimming member for dimming light (7)
And a light absorbing member (8) for absorbing the light reflected by the light reducing member (7).
Corresponding to). According to the present invention, of the light emitted from the light source, the light reflected by the dimming member is absorbed by the absorbing member, so that the light reflected by the dimming member is given to the exposure apparatus. Thermal or optical effects (eg, stray light) can be prevented. Here, in the exposure apparatus according to the third aspect of the present invention, it is preferable that a heat radiation member (9) is attached to the light absorbing member (8) (corresponding to claim 4). In the exposure apparatus according to the first to third aspects of the present invention, it is preferable that the dimming member (7) is configured to be able to advance and retreat with respect to the optical path (corresponding to claim 5). . In order to solve the above problem, an exposure apparatus according to a fourth aspect of the present invention irradiates a mask (M) with light emitted from a light source (1) to form a pattern ( In an exposure apparatus for transferring (DP) to a photosensitive substrate (P), the exposure apparatus is configured to be able to advance and retreat with respect to an optical path between the light source (1) and the mask (M), and is emitted from the light source (1). A light reducing member (7) for reducing light, and a substrate stage (PS) configured to be movable with the photosensitive substrate (P) mounted thereon.
And a measuring device (24) provided on the substrate stage (PS) and measuring light irradiated on the photosensitive substrate (P).
And a control device (2) for arranging the dimming member (7) in a state inclined with respect to the optical path when measuring the light irradiated on the photosensitive substrate (P) with the measuring device (24).
0) (corresponding to claim 6). According to the present invention, when measuring the amount of light emitted to the photosensitive substrate by the measurement device, the control device arranges the dimming member in a state inclined with respect to the optical path from the light source. Even if the amount of light emitted from the light source is equal to or greater than the amount that can be measured by the measuring device, the amount of light that is irradiated on the photosensitive substrate can be adjusted to the amount that can be measured by the measuring device. In addition, since the dimming member is arranged at an angle to the optical path, there is no adverse effect such as multiple reflection that occurs when the dimming member is arranged in the optical path, and as a result, high precision measurement is realized. can do. In the exposure apparatus according to the first to fourth aspects of the present invention, it is preferable that the dimming member (7) is formed of metal or ceramic (corresponding to claim 7). Further, the exposure apparatus according to the first to fourth aspects of the present invention provides a splitting optical system (1) for splitting at least the light passing through the dimming member (7) into a plurality of parts and irradiating the light to the mask (M).
It is preferable that the method further includes 1) (corresponding to claim 8). Here, each of the lights that are disposed between the mask (M) and the photosensitive substrate (P) and that are transmitted through the mask (M) by being divided by the division optical system (11) and passing through the mask (M) are converted into different partial optical systems. A projection optical system (PL) for projecting the photosensitive substrate (P) via (PL1 to PL5) is provided (corresponding to claim 9). In order to solve the above-mentioned problem, an exposure apparatus according to a fifth aspect of the present invention irradiates a mask (M) with light emitted from a light source (1) to form a pattern ( An exposure apparatus for transferring (DP) onto a photosensitive substrate (P) is provided in an optical path from the light source (1) to the mask (M), and is provided with a light-sensitive material that emits light from the light source (1). A light amount adjusting member (7, 1) for adjusting the light amount on the substrate (P).
3b to 13f, 14b to 14f), and the light amount adjusting member includes a light amount adjusting member for coarse adjustment (7, 13b to 13f).
f) and a light amount adjusting member (14b to 14f) for fine adjustment (corresponding to claim 10). According to the present invention, since the light amount adjusting member for coarse adjustment and the light amount adjusting member for fine adjustment are provided in the optical path from the light source to the mask, the light amount of light applied to the mask, and furthermore, the light is applied to the photosensitive substrate. When adjusting the amount of light to be adjusted, the irradiation light amount is set to a desired level (level) by the light amount adjustment member for coarse adjustment, and fine adjustment is performed while maintaining the light amount at that level by the light amount adjustment member for fine adjustment. can do. Therefore, the light amount can be adjusted quickly and accurately. Here, it is preferable that the light amount adjusting members (14b to 14f) for fine adjustment can change the transmittance almost continuously (Claim 1).
1). Further, the light amount adjusting member (7,
13b to 13f) and the light amount adjusting member (1
It is preferable that at least one of 4b to 14f) is disposed so as to be inclined with respect to the optical path (corresponding to claim 12). Furthermore, it is preferable that at least one of the light amount adjusting members for rough adjustment (7, 13b to 13f) and the light amount adjusting members for fine adjustment (14b to 14f) is formed of metal or ceramic. 1
3). The light amount adjusting member for coarse adjustment (7, 13b)
13f) are the light source (1) and the photosensitive substrate (P)
And the light amount adjusting member for fine adjustment (14b to 14f) is provided between the light amount adjusting member for coarse adjustment (7, 13b to 13f) and the photosensitive substrate (P). It is provided between them (corresponding to claim 14). An exposure apparatus according to a fifth aspect of the present invention further includes a division optical system (11) for dividing light emitted from the light source (1) into a plurality of light beams, and the light amount adjustment member (7) for coarse adjustment. Is provided in an optical path between the light source (1) and the split optical system (11), and the light amount adjusting members for fine adjustment (14b to 14f)
Is provided between the split optical system (11) and the photosensitive substrate (P) (corresponding to claim 15). Further, the exposure apparatus according to the fifth aspect of the present invention includes:
Each light which is disposed in an optical path between the mask (M) and the photosensitive substrate (P), is emitted from each emission end of the divided optical system (11), and transmitted through the mask (M). Is projected on the photosensitive substrate (P) via different partial optical systems (PL1 to PL5). Furthermore, an exposure apparatus according to a fifth aspect of the present invention is provided on a substrate stage (PS) configured to be movable with the photosensitive substrate (P) mounted thereon, and on the substrate stage (PS). And a measuring device (24) for measuring light irradiated to the photosensitive substrate (P) (corresponding to claim 17). The method for manufacturing a micro device according to the first aspect of the present invention is directed to the method for manufacturing a micro device according to the first aspect.
An exposure step (S44) of exposing the pattern (DP) formed on the mask (M) to the photosensitive substrate (P) using any of the exposure apparatuses according to A developing step (S46) of developing P). The method for manufacturing an exposure apparatus according to the present invention includes a light source (1) and the light source (1).
And a dividing optical system (11) that divides the light from the light into a plurality of light beams, and irradiates the mask (M) with the light divided by the dividing optical system (11) to form a pattern ( In the method of manufacturing an exposure apparatus for transferring DP) to a photosensitive substrate (P), light emitted from the split optical system (11) and passed through the mask (M) on the photosensitive substrate (P). A measuring step (S14) of measuring the amount of light of
In accordance with the smallest light amount measured in the measurement step (S14), the light amount adjusting members (13b to 13b) for coarse adjustment are used.
coarse adjustment step (S18 to S22) of selecting f) and disposing it between the divided optical system (11) and the mask (M)
And a light amount adjusting member (14b to 14f) for fine adjustment is arranged between the division optical system (11) and the mask (M), and the light divided by the division optical system (11) is exposed to light. A fine adjustment step (S24 to S32) of adjusting the light amount on the conductive substrate (P) to be substantially constant (corresponding to claim 19). Here, in the measuring step, a dimming member (7) for dimming light from the light source (1) is inclined with respect to an optical path between the light source (1) and the split optical system (11). A dimming member setting step (S10) for disposing the photosensitive substrate (P) on the substrate stage (PS) on which the photosensitive substrate (P) is mounted, and measurement for measuring light irradiated on the substrate stage (PS). A split light measuring step (S14) of sequentially measuring the light split by the split optical system (11) using an apparatus (24) (corresponding to claim 20). Second embodiment of the present invention
The method for manufacturing a micro device according to the aspect of the present invention comprises: exposing a pattern (DP) formed on the mask (M) to the photosensitive substrate (P) using an exposure apparatus manufactured using the above-described manufacturing method. The method includes a step (S44) and a developing step (S46) of developing the exposed photosensitive substrate (P) (corresponding to claim 21).

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an exposure apparatus, a method of manufacturing an exposure apparatus, and a method of manufacturing a micro device according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing an overall schematic configuration of an exposure apparatus according to an embodiment of the present invention. In the present embodiment, a pattern DP (pattern DP) of a liquid crystal display element formed on the mask M while relatively moving the mask M and the plate P with respect to a projection optical system including a plurality of catadioptric projection optical units. A description will be given by taking as an example a case where the present invention is applied to a step-and-scan type exposure apparatus for transferring an image onto a plate P as a photosensitive substrate.

In the following description, the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to the XYZ rectangular coordinate system. XYZ
The orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the plate P, and the Z axis is set in a direction orthogonal to the plate P. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane,
The Z axis is set vertically upward. In this embodiment, the direction in which the mask M and the plate P are moved (scanning direction)
Are set in the X-axis direction.

The exposure apparatus of the present embodiment provides illumination for uniformly illuminating a mask M supported in parallel to an XY plane on a mask stage (not shown in FIG. 1) MS via a mask holder (not shown). An optical system IL is provided. FIG.
Is a side view of the illumination optical system IL, and the same members as those shown in FIG. 1 are denoted by the same reference numerals. Referring to FIGS. 1 and 2, the illumination optical system IL includes a light source 1 composed of, for example, an ultra-high pressure mercury lamp. Light source 1 is elliptical mirror 2
Is arranged at the first focal position, the illumination light beam emitted from the light source 1 forms a light source image at the second focal position of the elliptical mirror 2 via the reflecting mirror (plane mirror) 3.

A shutter 4 is disposed at the second focal position. The shutter 4 includes an opening plate 4a (see FIG. 2) that is arranged obliquely with respect to the optical axis AX1, and a shielding plate 4b (see FIG. 2) that shields or opens an opening formed in the opening plate 4a. . The shutter 4 is arranged at the second focal position of the elliptical mirror 2 because the illumination light beam emitted from the light source 1 is converged and the aperture plate 4a is moved with a small amount of movement of the shielding plate 4b.
This is because it is possible to shield the opening formed in the aperture, and to obtain a pulsed illumination light beam by rapidly changing the amount of the illumination light beam passing through the opening.

The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 is converted into a substantially parallel light beam by the relay lens 5 and enters a wavelength selection filter 6 as a wavelength selection member. The wavelength selection filter 6 transmits only a light beam in a desired wavelength range. In this embodiment,
It is assumed that the wavelength selection filter 6 transmits only g-line (436 nm) light, h-line (405 nm), and i-line (365 nm) light. In the wavelength selection filter 6, for example, only g-line light and h-line light can be simultaneously selected, only h-line light and i-line light can be simultaneously selected, and further, i-line light can be selected. It is also possible to select only light.

Between the relay lens 5 and the wavelength selection filter 6, there is provided a dimming member 7 which is configured to be able to advance and retreat with respect to the optical path or as a light amount adjusting member for coarse adjustment. This neutral density filter 7 is connected to a plate P via a projection optical system PL using an aerial image measurement device 24 described later.
It is arranged in the optical path when measuring an optical characteristic (for example, light amount or the like) of the light irradiated thereon or when exposing a plate P coated with a highly sensitive photoresist. The neutral density filter 7 is formed of metal or ceramics in order to minimize a thermal effect (for example, a change in transmittance). In particular, when the neutral density filter 7 is formed of metal, it is preferable that the neutral density filter 7 be formed of stainless steel or aluminum which has high thermal conductivity and is easy to process. If a thermal effect does not occur so much, a structure in which a dielectric film or a metal film (for example, chromium (Cr)) is deposited on a transparent glass plate formed of quartz may be used.

When measurement is performed using the aerial image measurement device 24, a neutral density filter 7 having a transmittance of about 2% is used. %, A neutral density filter 7 having a transmittance of about%. The transmittance of the neutral density filter 7 is set by increasing or decreasing the number of minute holes formed. The dimming filter 7 includes a relay lens 5 and a dimming filter 7.
Or the multiple reflection between the neutral density filter 7 and the wavelength selection filter 6 lowers the optical characteristics (for example,
In order to prevent a change in the amount of light, it is arranged in the optical path so as to be inclined with respect to the optical path (optical axis AX1).

FIG. 3 is a perspective view showing an example of a specific configuration of the neutral density filter 7. Neutral density filter 7 shown in FIG.
Are dark filters 7b and 7c in a rectangular cassette 7a.
The cassette 7a is configured to be slidable along the Y axis by an air cylinder or a linear motor (not shown). The neutral density filter 7b stored in the cassette 7a is arranged on the optical axis AX1 when performing measurement using the aerial image measuring device 24, and the neutral density filter 7c is a plate coated with a highly sensitive photoresist. When exposing P, it is arranged on the optical axis AX1.

The cassette 7a corresponding to the neutral density filter 7b
An opening 7d is formed on the front surface of the cassette 7 and an opening 7e is formed on the back surface thereof.
An opening 7f is formed on the front surface of a, and an opening 7g is formed on the back surface. Further, openings 7h and 7i are formed at locations where the neutral density filters 7b and 7c are not disposed. Therefore, when the neutral density filter 7d is disposed on the optical axis AX1, light enters the neutral density filter 7d through the opening 7d, and light transmitted through the neutral density filter 7d is emitted through the opening 7e. Similarly, the neutral density filter 7 is placed on the optical axis AX1.
c, the neutral density filter 7 is provided through the opening 7f.
The light is incident on c, and the light transmitted through the neutral density filter 7c is emitted through the opening 7g. The openings 7h and 7i are provided on the optical axis AX when the light emitted from the light source 1 is not reduced due to the device configuration.
1 above.

When the neutral density filters 7b and 7c are made of metal or ceramics, the neutral density filters 7b and 7c are used.
Since the light passes through the minute holes formed in 7c, the optical path length for transmitting through the neutral density filters 7b and 7c is the same as the optical path length of air. Therefore, it is not necessary to arrange an optical member between the opening 7h and the opening 7i. However, when the neutral density filters 7b and 7c are formed by depositing a dielectric film or a metal film on a transparent glass plate formed of quartz,
The optical path length when passing through the neutral density filters 7b and 7c increases according to the refractive index of the glass plate. Therefore, in this case, the neutral density filter 7 is provided between the opening 7h and the opening 7i.
It is preferable to arrange a transparent glass plate having the same thickness as the glass plates b and 7c.

A plane perpendicular to the optical axis AX1 and the neutral density filter 7
The angle φ formed between the light source 1 and the shutter 4 is set so that the reflected light from the neutral density filters 7b and 7c does not affect the light source 1 or the shutter 4. For example, the angle φ is set to about 10 degrees. In FIGS. 1 to 3, the neutral density filters 7b and 7c are illustrated by taking as an example a case where the reflected light is arranged to travel from the origin of the XYZ coordinate system to the third quadrant of the XY plane. The inclination directions of the filters 7b and 7c are set according to the positions of the light source 1 and the shutter 4 of the exposure device. Preferably, in order to avoid the thermal influence of the reflected light, the neutral density filter 7 is arranged such that the reflected light travels in the upward direction (Z direction) of the exposure apparatus.
It is preferable to set the inclination directions of b and 7c. The control of arranging the neutral density filter 7 (the neutral density filters 7b and 7c) in the optical path is performed by the main control system 20 in FIG.

Returning to FIGS. 1 and 2, the light reflected by the neutral density filter 7 travels in the direction in which the light travels.
Is arranged. The light absorbing plate 8 is provided for absorbing the reflected light of the neutral density filter 7 to prevent a thermal or optical influence (for example, stray light) of the reflected light on the exposure apparatus. . The light absorbing plate 8 is made of, for example, black alumite. A heat sink 9 as a heat radiating member is attached to the light absorbing plate 8.
The heat sink has a plurality of heat radiating plates formed of a metal having a high thermal conductivity (for example, aluminum or copper), and transfers heat generated when the light absorbing plate 8 absorbs the reflected light of the neutral density filter 7 through the heat radiating plate. Release. It is preferable that the light reflected by the neutral density filter 7 is incident on the light absorbing plate 8 after the light is condensed to some extent via the relay lens 5 because the light absorbing plate 8 can be reduced in size. However, in consideration of the thermal effect (for example, denaturation) of the light absorbing plate 8, it is better to avoid disposing the light absorbing plate 8 at the condensing position of the reflected light.

The light passing through the wavelength selection filter 6 forms an image again through the relay lens 7. An entrance end 11a of the light guide 11 is disposed near the image forming position. The light guide 11 corresponds to a split optical system according to the present invention. For example, the light guide 11 is a random light guide fiber configured by randomly bundling a large number of fiber strands, and has the number of light sources 1 (1 in FIG. 1). Number of incident ends 11
a, and the same number of emission ends 11b to 11f (only the emission end 11b is shown in FIG. 2) as the number of projection optical units (five in FIG. 1) constituting the projection optical system PL. In this way, the light incident on the incident end 11a of the light guide 11 propagates through the inside thereof,
It is split from f and ejected.

A collimating lens 12b, a neutral density filter 13b, a variable neutral density filter 14b, a fly-eye integrator 15b, an aperture stop 16b, and a condenser lens system 17b are provided between the exit end 11b of the light guide 11 and the mask M. They are arranged in order. Similarly, the collimating lenses 12 c to 12 f and the neutral density filter 1
3c to 13f, variable neutral density filters 14c to 14f, fly-eye integrators 15c to 15f, aperture stop 16
c to 16f, and condenser lens systems 17c to 17f
Are arranged in order. Here, for the sake of simplicity, the emission ends 11b to 11f of the light guide 11 will be described.
The configuration of the optical member provided between the mask M and the collimating lens 12b provided between the emission end 11b of the light guide 11 and the mask M, the neutral density filter 13b,
Variable neutral density filter 14b, fly-eye integrator 15b, aperture stop 16b, and condenser lens system 1
7b will be described as a representative.

The divergent light beam emitted from the light emitting end 11b of the light guide 11 is converted into a substantially parallel light beam by the collimating lens 11b, and thereafter, a light-reducing filter 13b as a light amount adjusting member for coarse adjustment and a fine adjusting filter 13b. Fly-eye integrator (optical integrator) 1 in order via a variable neutral density filter 14b as a light amount adjusting member
5b. The neutral density filter 13b and the variable neutral density filter 14b are provided for adjusting the transmitted light amount of light emitted from the emission end 11b of the light guide 11. Dimming filters 13c to 13f and variable dimming filter 14 similar to dimming filter 13b and variable dimming filter 14b
Since c to 14f are provided at the emission ends 11c to 11f, by adjusting the amount of transmitted light, the amount of light applied to the mask M and, consequently, the amount of light applied to the plate P is made uniform. be able to.

At least one of the neutral density filter 13b and the variable neutral density filter 14b is formed of metal or ceramics in order to minimize a thermal effect (for example, a change in transmittance). In particular, when at least one of the neutral density filter 13b and the variable neutral density filter 14b is formed of metal, it is preferable to form stainless steel which has high thermal conductivity and is easy to process. If the thermal effect is not a problem, a transparent glass plate made of quartz may be formed by depositing a dielectric film or a metal film (for example, chromium (Cr)). The optical filter 13b is
One is selected from those whose transmittance is set in 5% steps within a range of 70 to 95% in accordance with the amount of light applied to the plate P and arranged. The variable neutral density filter 14b has a 7
The transmittance can be varied almost continuously in the range of 0 to 95%.

In FIGS. 1 and 2, both the neutral density filter 13b and the variable neutral density filter 14b have the optical axis AX.
2 shows an example in which it is arranged so as to be perpendicular to the light-reducing filter 13b and the variable light-reducing filter 1b.
It is preferable to arrange at least one of 4b in a state inclined with respect to the optical axis AX2. At least one of the neutral density filter 13b and the variable neutral density filter 14b is connected to the optical axis AX2.
The angle and the direction of inclination when arranging them with respect to are set to angles and directions of inclination that minimize thermal or optical effects on other members provided in the exposure apparatus. Furthermore, if possible due to the configuration of the exposure apparatus, it is preferable to dispose the same components as the light absorbing plate 8 and the heat sink 9 to absorb the reflected light from the neutral density filter 13b and the variable neutral density filter 14b.

Here, the configuration of the neutral density filter 13b and the variable neutral density filter 14b will be described. FIG. 4 is a top view showing an example of the neutral density filter 13b, and FIG. 5 is a top view showing an example of the variable neutral density filter 14b. FIG. 4 illustrates an example in which the neutral density filter 13b is formed of metal or ceramics, and FIG. 5 illustrates an example in which the variable neutral density filter 14b is formed of a light shielding pattern on a light transmitting member. The neutral density filter 13b shown in FIG. 4 has a rectangular outer shape and a large number of small holes h. The holes h are randomly formed so that uneven illuminance does not occur.
The higher the transmittance, the larger the number.

The variable neutral density filter 14b has a rectangular outer shape, and the pattern width in the Y-axis direction gradually changes as shown in FIG. 5, for example (however, monotonically, linearly in this embodiment). A pattern P1 is formed in which a plurality of strip patterns are arranged in parallel in the Y-axis direction. Here, the patterns P1 and NP are formed of chromium vapor-deposited on a light-transmitting substrate such as glass, the pattern NP is a chromium-deposited region, that is, a light-shielding region, and the pattern P1 is chromium-deposited. There is no area, that is, a light transmitting area. The variable neutral density filter 14b can be formed of metal or ceramics. In this case, a large number of minute holes may be formed in the region of the pattern P1 on the metal or ceramics substrate. As described above, Y in the figure of the pattern P1
Since the interval in the axial direction is designed to change according to the position on the X axis, the transmittance can be changed almost continuously by moving the variable dimming member 14b in the X axis direction. The control of the transmittance of the variable dimming member 14b is shown in FIG.
The main control system 20 sets the position of the variable dimming member 14b in the X-axis direction via the driving device 19.

In order to transfer the pattern DP formed on the mask M to the plate P with high resolution, it is necessary to improve the uniformity of the illuminance distribution in the irradiation area on the mask M. However, the light beam cross section immediately after passing through the variable neutral density filter 14b exhibits a strip-shaped light quantity distribution according to the shape of the pattern P1 formed on the variable neutral density filter 14b. For this reason, the variable neutral density filter 14b is disposed closer to the light source 1 than the fly-eye integrator 15b in consideration of the uniformity of the illuminance distribution in the irradiation area on the mask M. By using such a variable neutral density filter 14b, it is possible to obtain an illumination optical device IL having high uniformity and capable of changing illuminance almost continuously.

The fly-eye integrator 15b is constructed by arranging a large number of positive lens elements vertically and horizontally and densely so that the central axis thereof extends along the optical axis AX. Therefore, the light beam incident on the fly-eye integrator 15b is split into wavefronts by a large number of lens elements, and a secondary light source having the same number of light source images as the number of lens elements is provided on the rear focal plane (ie, near the exit plane). Form. That is, a substantial surface light source is formed on the rear focal plane of the fly-eye integrator 15b. If the pitch of the pattern P1 formed on the variable neutral density filter 14b and the pitch of the lens elements formed on the fly-eye integrator 15b match or are integral multiples of the length of the mask M, There is a possibility that the illuminance distribution of the illuminating light to be irradiated may be deteriorated.
Therefore, the pitch of the pattern P1 formed on the variable neutral density filter 14b and the fly-eye integrator 15
The number of lens elements arranged in b is set so that the illuminance unevenness of the illumination light applied to the mask M is minimized. For details of this setting method, refer to, for example, Japanese Patent Application Laid-Open No. 10-199800.

Light beams from a large number of secondary light sources formed on the rear focal plane of the fly-eye integrator 15b pass through an aperture stop 16b (FIG. 1) disposed near the rear focal plane of the fly-eye integrator 15b. (Not shown), and then enters the condenser lens system 17b.
Note that the aperture stop 16b is connected to the corresponding projection optical unit PL.
One of the pupil planes is optically conjugated to the pupil plane, and has a variable aperture for defining a range of a secondary light source contributing to illumination. The aperture stop 16b changes the aperture diameter of the variable aperture to change the σ value for determining the illumination condition (the projection optical units PL1 to PL configuring the projection optical system PL).
5 is set to a desired value (the ratio of the aperture diameter of the secondary light source image on the pupil plane to the aperture diameter of the pupil plane).

The light beam passing through the condenser lens system 17b illuminates the mask M on which the pattern DP is formed in a superimposed manner. Similarly, the divergent light beams emitted from the other emission ends 11c to 11f of the light guide 11
c to 12f, neutral density filters 13c to 13f, variable neutral density filters 14c to 14f, fly-eye integrator 1
The mask M is illuminated in a superimposed manner sequentially through 5c to 15f, aperture stops 16c to 16f, and condenser lens systems 17c to 17f. That is, the illumination optical system IL illuminates a plurality (five in FIG. 1 in total) of trapezoidal regions arranged in the Y-axis direction on the mask M.

In the illumination optical system IL described above, the illumination light emitted from one light source 1 is equally divided into five illumination lights via a light guide 11, but the number of light sources 1 and the projection optical system Various modifications are possible without being limited to the number of units. That is, two or more light sources are provided as needed, and the illumination light from these two or more light sources is equally divided into a required number (the number of projection optical units) of illumination light via a light guide having good randomness. You can also. In this case, the light guide has the same number of incident ends as the number of light sources,
It will have the same number of exit ends as the number of projection optical units.

The light from each illumination area on the mask M is divided into a plurality (five in FIG. 1 in total) of projection optical units PL1 to PL1 arranged along the Y-axis direction so as to correspond to each illumination area.
The light enters the projection optical system PL composed of PL5. Here, the configuration of each of the projection optical units PL1 to PL5 is the same as each other. Next, the configuration of the projection optical systems PL1 to PL5 as the partial optical system of the present invention will be described. FIG. 6 is a side view showing an example of the configuration of the projection optical unit PL1.
The configuration of the projection optical units PL2 to PL5 is substantially the same as the configuration of the projection optical unit PL1.

The projection optical unit PL1 shown in FIG. 6 includes a first imaging optical system 30a for forming a primary image of a pattern DP based on light from a mask M, and a mask pattern based on light from the primary image. A second imaging optical system 30b that forms an erect image (secondary image) on the plate P. still,
In the vicinity of the formation position of the primary image of the pattern P1, a mask M
A field stop AS that defines a field of view (illumination area) of the projection optical unit PL1 above and a projection area (exposure area) of the projection optical unit on the plate P is provided.

The first imaging optical system 30a is connected to the
A first right-angle prism 31a having a first reflection surface inclined at an angle of 45 ° with respect to the mask surface (XY plane) so as to reflect light incident along the Z-axis direction in the −X-axis direction is provided. ing. The first imaging optical system 30a includes a first refractive optical system 32a having a positive refractive power and a first concave reflecting mirror having a concave surface facing the first rectangular prism 31a in order from the first rectangular prism 31a side. 33a. The first refractive optical system 32a and the first concave reflecting mirror 33a are arranged along the X-axis direction, and constitute a first catadioptric optical system 34a as a whole. The light incident on the first right-angle prism 31a from the first catadioptric optical system 34a along the + axis X direction is- The light is reflected in the axis Z direction.

On the other hand, the second imaging optical system 30b has a plate surface (X) that reflects light incident along the -Z-axis direction from the second reflection surface of the first right-angle prism 31a in the -X-axis direction.
A second right-angle prism 31b having a first reflecting surface inclined at an angle of 45 ° with respect to the (Y plane) is provided. Also,
The second imaging optical system 30b includes, in order from the second right-angle prism 31b side, a second refractive optical system 32b having a positive refractive power;
And a second concave reflecting mirror 33b having a concave surface facing the second right-angle prism 31b. The second refractive optical system 32b and the second concave reflecting mirror 33b are arranged along the X-axis direction, and constitute a second catadioptric optical system 34b as a whole. Second
The light incident on the second right-angle prism 31b from the catadioptric optical system 34b along the + axis X direction is -Z by the second reflecting surface obliquely inclined at 45 ° with respect to the plate surface (XY plane surface). Reflected in the axial direction.

In this embodiment, a mask-side magnification correcting optical system 35a is provided in the optical path between the first catadioptric optical system 34a and the second reflecting surface of the first right-angle prism 31a. In the optical path between the optical system 34b and the second reflecting surface of the second right-angle prism 31b, the plate-side magnification correcting optical system 3 is provided.
5b is attached. In the optical path between the mask M and the first reflecting surface of the first right-angle prism 31a, a first parallel flat plate 36 and a second parallel flat plate 37 as an image shifter are provided.

FIG. 7 shows a mask-side magnification correcting optical system 3 shown in FIG.
It is a figure which shows schematically the structure of 5a and the plate side magnification correction optical system 35b. Hereinafter, the mask-side magnification correcting optical system 35
The configuration and operation of the a and the plate-side magnification correcting optical system 35b will be described. First, referring to FIG. 5, the optical axis of the first catadioptric optical system 34a is represented by AX11, and the optical axis of the second catadioptric optical system 34b is represented by AX12. Also,
From the center of the illumination area on the mask M defined by the field stop AS, proceed in the -Z-axis direction, pass through the center of the field stop AS,
Similarly, the path of the light beam reaching the center of the exposure area on the plate P defined by the field stop AS is represented by a field center axis AX10.

In the optical path between the first refractive optical system 32a and the second reflecting surface of the first right-angle prism 31a, the mask-side magnification correcting optical system 35a sequentially moves along the axis AX10 from the first refractive optical system 32a. It is composed of a plano-convex lens 51 whose plane faces the one refracting optical system 32a side, and a plano-concave lens 52 whose plane faces the second reflection surface side of the first right-angle prism 31a. That is, the optical axis of the mask-side magnification correcting optical system 35a coincides with the axis AX10, and the convex surface of the plano-convex lens 51 and the concave surface of the plano-concave lens 52 have curvatures of substantially the same size, and are opposed to each other with an interval. .

The plate-side magnification correcting optical system 35b
In the optical path between the second refractive optical system 32b and the second reflecting surface of the second right-angle prism 31b, the second refractive optical system 32b is arranged along the axis AX10 in order from the second refractive optical system 32b.
A plano-concave lens 53 having a flat surface facing the side and a plano-convex lens 54 having a flat surface facing the second reflection surface side of the second right-angle prism 31b. That is, the optical axis of the plate-side magnification correcting optical system 35b also matches the axis AX10, and the plano-concave lens 53
The concave surface and the convex surface of the plano-convex lens 54 have a curvature of substantially the same size, and are opposed to each other with an interval.

More specifically, the mask-side magnification correcting optical system 3
5a and the plate-side magnification correcting optical system 35b are connected to the axis AX.
They have the same configuration as each other only by changing the direction along 10. The distance between the plano-convex lens 51 and the plano-concave lens 52 forming the mask-side magnification correcting optical system 35a and the plano-concave lens 53 forming the plate-side magnification correcting optical system 35b
When at least one of the distances between the lens and the plano-convex lens 54 is changed by a small amount, the projection magnification of the projection optical unit changes by a very small amount, and along the focusing direction of the image plane (the axis line). The position (along AX10), ie the focus position, also changes by a small amount. The mask-side magnification correcting optical system 35a is driven by a first driving unit 38a, and the plate-side magnification correcting optical system 35b is driven by a second driving unit 38a.
b.

On the other hand, the first parallel flat plate 36 as an image shifter has a parallel
It is set perpendicular to X10, and is configured to be rotatable by a small amount around the X axis. When the first parallel flat plate 36 is rotated by a small amount around the X axis, the image formed on the plate P slightly moves (image shift) in the Y direction on the XY plane. Further, the second parallel flat plate 37 as an image shifter has its parallel plane set perpendicular to the visual field center axis AX10 in a reference state, and is configured to be rotatable by a small amount around the Y axis. When the second parallel plane plate 37 is rotated by a small amount around the Y axis, the image formed on the plate P slightly moves (image shift) in the X direction on the XY plane. Note that the first parallel flat plate 36 is driven by a third driving unit 39, and the second parallel flat plate 37 is driven by a fourth driving unit 40.

In this embodiment, the second right-angle prism 31b is configured to function as an image rotator. That is, in the second right-angle prism 31b, the intersection line (ridge line) between the first reflection surface and the second reflection surface in the reference state is Y.
It is set to extend along the axial direction, and the visual field center axis A
It is configured to be rotatable by a small amount around X10 (around the Z axis). When the second right-angle prism 31b is rotated by a minute amount around the axis AX10, the image formed on the plate P is minutely rotated (image rotation) around the axis AX10 (around the Z axis) on the XY plane. The second right-angle prism 31b is
It is configured to be driven by the fifth drive unit 41. The first right-angle prism 31a may be configured to function as an image rotator instead of the second right-angle prism 31b, or both the second right-angle prism 31b and the first right-angle prism 31a may function as an image rotator. May be configured.

Also, a lens that hermetically surrounds the space between the pair of lenses 42 and 43 disposed near the second concave reflecting mirror 33b (that is, disposed near the pupil plane of the projection optical unit PL1). A control room 44 is provided. The pressure in the closed space of the lens control chamber 44 is configured to be adjustable by a pressure adjusting unit 45. When the pressure in the closed space of the lens control chamber 44 is changed by a small amount, the focus position of the projection optical unit changes by a small amount. It should be noted that a lens control chamber may be provided so as to surround a space between the plurality of lenses arranged near the first concave reflecting mirror 33a. Also,
A lens control chamber may be provided between the first concave reflecting mirror 33a or the second concave reflecting mirror 33b and an adjacent optical member (lens).

Hereinafter, in order to simplify the description of the basic configuration of each projection optical unit, first, a first parallel flat plate 36,
A second parallel flat plate 37, a mask-side magnification correcting optical system 35a,
A state in which the plate-side magnification correcting optical system 35b and the lens control chamber 44 are not provided will be described.
As described above, the pattern DP formed on the mask M
Is illuminated with substantially uniform illuminance by illumination light (exposure light) from the illumination optical system IL. Light traveling along the -Z axis direction from the mask pattern formed in each illumination area on the mask M is deflected by 90 ° by the first reflection surface of the first right-angle prism 31a, and then is deflected in the -X axis direction. Along the first catadioptric optical system 34a. First catadioptric optical system 34
The light incident on a reaches the first concave reflecting mirror 33a via the first refractive optical system 32a. The light reflected by the first concave reflecting mirror 33a again passes through the first refractive optical system 32a,
The light enters the second reflecting surface of the first right-angle prism 31a along the + X-axis direction. The light deflected by 90 ° on the second reflecting surface of the first right-angle prism 31a and traveling along the −Z-axis direction forms a primary image of the mask pattern near the field stop AS. Note that the lateral magnification of the primary image in the X-axis direction is +1 and the lateral magnification in the Y-axis direction is -1.

The light traveling along the -Z-axis direction from the primary image of the mask pattern is deflected by 90 ° by the first reflection surface of the second right-angle prism 31b, and then the second reflection is performed along the -X-axis direction. The light enters the refractive optical system 34b. The light incident on the second catadioptric system 34b reaches the second concave reflecting mirror 33b via the second catadioptric system 32b. The light reflected by the second concave reflecting mirror 33b is again transmitted to the second refractive optical system 32b.
Through the second right-angle prism 31b along the + X-axis direction.
At the second reflection surface. The light that has been deflected by 90 ° on the second reflection surface of the second right-angle prism 31b and has traveled along the −Z-axis direction forms a secondary image of the mask pattern in the corresponding exposure area on the plate P. Here, the lateral magnification in the X-axis direction and the lateral magnification in the Y-axis direction of the secondary image are both +1 times. That is, the image of the pattern DP formed on the plate P via each projection optical unit is an equal-size erect image, and each of the projection optical units PL1 to PL5 constitutes an equal-size erect system.

In the first catadioptric optical system 34a, the first catadioptric optical system 32a has the first
Since the concave reflecting mirror 33a is arranged, it is almost telecentric on the mask M side and the field stop AS side. Also, in the second catadioptric system 34b, the second
Since the second concave reflecting mirror 33b is arranged near the rear focal position of the refracting optical system 32b, it is almost telecentric on the field stop AS side and the plate P side. As a result, each of the projection optical units PL1 to PL5 is an optical system that is telecentric on almost both sides (the mask M side and the plate P side). Thus, the plurality of projection optical units PL
Light passing through the projection optical system PL composed of 1 to PL5 is patterned on a plate P supported in parallel to the XY plane via a plate holder (not shown) on a plate stage (not shown in FIG. 1) PS. An image of DP is formed.
That is, as described above, each of the projection optical units PL1 to PL
Since L5 is configured as an equal-size erecting system, a plurality of trapezoidal exposure regions arranged in the Y-axis direction on the plate P, which is a photosensitive substrate, so as to correspond to the respective illumination regions have a mask pattern. A 1: 1 erect image is formed.

Returning to FIG. 1, the above-described mask stage MS
Is provided with a scanning drive system (not shown) having a long stroke for moving the mask stage MS along the X-axis direction which is the scanning direction. Further, a pair of alignment drive systems (not shown) are provided for moving the mask stage MS by a minute amount along the Y-axis direction which is a scanning orthogonal direction and rotating the mask stage MS by a minute amount about the Z-axis. The position coordinates of the mask stage MS are measured by a laser interferometer (not shown) using the movable mirror 21 and the position is controlled.

A similar drive system is provided on the plate stage PS. That is, a scanning drive system (not shown) having a long stroke for moving the plate stage PS along the X-axis direction which is the scanning direction, and moving the plate stage PS by a very small amount along the Y-axis direction which is the scanning orthogonal direction. A pair of alignment drive systems (not shown) are provided for moving and rotating the Z-axis by a small amount around the Z-axis. The position coordinates of the plate stage PS are measured by a laser interferometer (not shown) using the movable mirror 22, and the position is controlled. Furthermore,
As a means for relatively positioning the mask M and the plate P along the XY plane, a pair of alignment systems 23a and 23b are arranged above the mask M. As the alignment systems 23a and 23b, for example, an alignment system of a type that obtains a relative position between a mask alignment mark formed on the mask M and a plate alignment mark formed on the plate P by image processing can be used.

In the present embodiment, as shown in FIG. 1, an aerial image measuring device 24 is provided as a measuring device attached to the plate stage PS. The aerial image measurement device 24 is provided with an index plate 60 provided at substantially the same height position (position along the Z-axis direction) as the image plane of the projection optical system PL.
And a plurality of (six in the present embodiment, as described later) detection units 61 arranged at intervals along a direction orthogonal to the scanning direction, that is, the Y-axis direction. FIG.
FIG. 2 is a perspective view illustrating a schematic configuration of an aerial image measurement device 24. As shown in FIG. 8, each detection unit 61 includes a relay optical system 62 for enlarging and forming a secondary image of an optical image formed on the index surface 60 a of the index plate 60 via each projection optical unit 61. And a two-dimensional image sensor 63 such as a CCD for detecting a secondary image formed via the relay optical system 62.

Accordingly, an enlarged image of the index 60b formed on the index surface 60a is also formed on the detection surface of the two-dimensional image sensor 63 via the relay optical system 62. The relay optical system 62 is provided with a sensitivity correction filter 64 for matching the spectral sensitivity of the two-dimensional image sensor 63 with the spectral sensitivity of the resist applied on the plate P. Outputs from the two-dimensional imaging elements 63 of the plurality of detection units 61 are supplied to the main control system 20 (see FIG. 2). Main control system 20
Is connected to a display 65 for displaying image information detected by the two-dimensional image sensor 63 of each detection unit 61. The main control system 20 includes the first drive unit 3 described above.
8a, the second drive unit 38b, the third drive unit 39, the fourth drive unit 40, the fifth drive unit 41, and the pressure adjustment unit 45, respectively. The measurement operation in the aerial image measurement device 24 and the control operation in the main control system 20 will be described later.

Thus, the mask M and the plate P are moved to the projection optical system PL including the plurality of projection optical units PL1 to PL5 by the operation of the scan drive system on the mask stage MS side and the scan drive system on the plate stage PS side. By integrally moving along the same direction (X-axis direction), the entire pattern region on the mask P is transferred (scanning exposure) to the entire exposure region on the plate P. For the shape and arrangement of the plurality of trapezoidal exposure regions, and further, the shape and arrangement of the plurality of trapezoidal illumination regions, see, for example, Japanese Patent Application Laid-Open No. 7-183212.

Next, a method of manufacturing an exposure apparatus according to an embodiment of the present invention having the above-described configuration will be described. FIG.
In the case of manufacturing the exposure apparatus shown in (1), first, the illumination optical system IL and the projection optical system PL are assembled with high accuracy. Next, the assembled illumination optical system IL and projection optical system, a mask alignment system including a mask stage MS, a pair of alignment systems 23a and 23b, and a movable mirror 21, and a plate alignment system including a plate stage PS and a movable mirror 22 The components shown in FIGS. 1 to 8, such as the aerial image measurement device 24, are assembled electrically and mechanically or optically. The final overall adjustment (electrical adjustment, operation confirmation, etc.) is performed so that the position of the plate P can be accurately controlled at high speed and exposure can be performed with high exposure accuracy while improving throughput. An exposure apparatus is manufactured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled. In this embodiment, at the stage when the exposure apparatus is assembled, the dimming members 13b to 13b are installed in the illumination optical system IL.
3f and the variable dimming members 14b to 14f are not provided.

The outline of the method of manufacturing the exposure apparatus is as described above. Next, the step of equalizing the amount of light applied to the plate P via the projection optical units PL1 to PL5 will be described in detail. . This step is performed in the final overall adjustment described above. FIG. 9 shows each projection optical unit PL1.
It is a flowchart which shows the procedure of the process of equalizing the light quantity of the light irradiated to the plate P via -PL5. When the process starts, first, the main control system 20 operates the driving device 18 (FIG. 2).
(See step S10) to output the control signal to arrange the neutral density filter 7 in an inclined state with respect to the optical path. When the neutral density filter 7 has the configuration shown in FIG. 3, the driving device 18 which is realized by an air cylinder or a linear motor is driven to move the cassette 7a in the Y-axis direction to move the neutral density filter 7b to the optical axis. It is arranged on AX1.

This is to match the detection sensitivity of the two-dimensional image sensor 63 provided in the aerial image measuring device 24.
That is, the aerial image measuring device 24 shown in FIG. 8 is used to measure the amount of light applied to the plate P. However, this is because the two-dimensional image sensor 63 is saturated, and it becomes impossible to accurately measure the amount of light applied to the plate P. When the arrangement of the neutral density filter 7 is completed, the shutter 4 is opened by moving the shielding plate 4b shown in FIG. 2 to open the opening formed in the opening plate 4a. The light from the light source 1 passes through the shutter 4 and the relay lens 5 and then enters the neutral density filter 7 arranged in a state inclined with respect to the optical path.

About 2% of the light incident on the neutral density filter 7
Only a certain amount of light passes through the neutral density filter 7, and the remaining light is reflected by the neutral density filter 7 and absorbed by the light absorbing plate 8. The light transmitted through the neutral density filter 7 is
, But g-line (436 nm) light and h-line (405
nm) and i-line (365 nm) light pass through the wavelength selection filter 6. The light transmitted through the wavelength selection filter 6 is focused by the relay lens 10 and
The light enters from one incident end 11a, is divided into five light beams, and exits from the exit ends 11b to 11f of the light guide 11.

The light emitted from each of the emission ends 11b to 11f is applied to a collimating lens 12b to 12f, a fly-eye integrator 15b to 15f, and an aperture stop 16b to 1f, respectively.
6f and the condenser lens systems 17b to 17f are sequentially transmitted to illuminate the mask M in a superimposed manner. Each of the light radiated to the mask M is transmitted to each projection optical unit PL
Irradiation is performed on the plate P via 1 to PL5 (step S
12). Light flux emitted from the light source 1 is about 100 mW / c
Assuming that the exposure power is m ² , the neutral density filter 7
In the optical path, light having an illuminance of about ² mW / cm ² is irradiated.

Next, a step of measuring the amount of light irradiated on the plate P using the aerial image measuring device 24 is performed (step S14). FIG. 10 is an explanatory diagram of a method of measuring the amount of light emitted to the plate P via each projection optical unit in the present embodiment. In the present embodiment, FIG.
As shown in FIG. 0, images Im1 to Im5 of the aperture of the field stop AS are formed via the projection optical units PL1 to PL5. Each of the images Im1 to Im5 is a trapezoidal exposure area, and is arranged in a staggered manner in the scanning orthogonal direction (Y-axis direction). Here, the rectangular area at the center of the images Im1 to Im5 is an area that does not contribute to the overlapping exposure, and the triangular areas at both ends thereof are areas that contribute to the overlapping exposure.

As described above, the aerial image measurement device 24
In FIG. 10, these units are denoted by reference numerals 61a to 61f and are distinguished from each other.
As shown in FIG. 10, the detection units 61a to 61f
They are arranged at equal intervals along the axial direction. The intervals between the detection units 61a to 61f correspond to the intervals along the Y-axis direction of the triangular area at both ends of the images Im1 to Im5. That is, the intervals between the detection units 61a to 61f are, as shown by the solid lines in the figure, the six detection units 61a to 61f.
a to 61f and three images Im linearly arranged in the Y-axis direction.
In a state in which 1, Im3, and Im5 are aligned along the X-axis direction, the detection unit 61a and the detection unit 61b cover a pair of triangular regions of the image Im1 formed via the projection optical unit PL1, respectively. , The detection unit 61c and the detection unit 61d respectively cover a pair of triangular regions of the image Im3 formed via the projection optical unit PL3, and the detection unit 61e and the detection unit 61f are formed via the projection optical unit PL5. It is set so as to cover a pair of triangular regions of the image Im5.

Therefore, the six detection units 61a-61
When the plate stage PS is moved by a predetermined distance along the X-axis direction from the state where f and the three images Im1, Im3, and Im5 are aligned, as shown by the broken line in the figure,
The two detection units 61a to 61f and the two images Im2 and Im4 can be aligned. In this state, the detection unit 61b and the detection unit 61c cover a pair of triangular regions of the image Im2 formed via the projection optical unit PL2, respectively.
d and the detection unit 61e respectively cover a pair of triangular regions of the image Im4 formed via the projection optical unit PL4. At this time, the detection unit 61a and the detection unit 61f do not perform the detection operation.

As described above, in the present embodiment, the aerial image measuring device 24 includes six detection units 61a to 61a.
f, the detection units 61a to 61a
A relative alignment between 61f is performed. In this positioning, not only positioning on the XY plane but also Z
Axial alignment is also performed. Detection unit 61a-
The alignment of 61f is performed by using the index 60 provided on the index plate 60.
b. That is, the index plate 60 is provided with six indices 60b arranged at predetermined equal intervals along the Y-axis direction, for example, in each of the detection units 61a.
By aligning the centers of the images of the indices 60b detected by the detection units 61a to 61f with the detection centers of the detection units 61a to 61f, mutual alignment along the X-axis direction and the Y-axis direction is performed. Further, mutual alignment along the Z-axis direction is performed based on, for example, the contrast of the image of the index 60b detected by each detection unit. In this way, in a state where the light is dimmed by the operation of the neutral density filter 6, the amount of light emitted to the plate P is measured.

When the above measurement is completed, the shutter 4 is closed by moving the shielding plate 4b shown in FIG. The irradiation is stopped (step S16). The measurement result of step S14 is supplied to the main control system 20. The main control system 20 determines the projection optical unit PL1
The part to which the light with the smallest light amount is irradiated from among the light amounts irradiated on the plate P via .about.PL5 is specified (step S5).
18). Next, the light reduction filters 13b to 13b to be provided corresponding to the emission ends 11b to 11f of the light guide 11 from the light amount specified in the step S18 and the light amounts measured at positions other than the position where the light amount is measured. The transmittance of 13f is determined (step S20).

For example, it is assumed that the light amount of the image Im1 shown in FIG. 10 is specified to be the smallest. In this step S20,
Assuming that the measured light amount of the image Im1 is LQ, the transmittance of the neutral density filters 13c to 13f is
When 3f is arranged in the optical path, the light quantity of each of the images Im2 to Im5 is determined to be not less than the light quantity LQ and to have the lowest transmittance. The reason why the transmittance of the neutral density filters 13c to 13f is determined to be the lowest is that, as described above, the transmittance of the neutral density filters 13b to 13f is set in the range of 70 to 95% in increments of 5%. This is because something is prepared.

As described above, the transmittance of the neutral density filters 13b to 13f is determined in accordance with the light having the smallest light amount because the image Im1 is adjusted when the light amounts of the images Im1 to Im5 are adjusted.
This is because it is impossible to increase the amount of light of Im5 to Im5, and there is no choice but to reduce and adjust the light of a large amount of light.
The transmittance of the neutral density filters 13a to 13f may be determined automatically by the main control system 20 based on the measurement result of the aerial image measurement device 24, or the light amount measured by the aerial image measurement device 24 may be determined. The information may be displayed on the display 65 and determined by the manufacturer.

When the transmittances of the neutral density filters 13b to 13f are determined, the manufacturer sets the neutral density filters 13b to 13f having the transmittances between the collimating lens 12b in the illumination optical system IL and the fly-eye integrator 15b. (Step S24), and replaces each of the variable neutral density filters 14b to 14f with the neutral density filters 13a to 13f.
f and the fly-eye integrators 15b to 15f (step S24). Neutral density filter 13bc-1
When the arrangement of 3f and the variable neutral density filters 14c to 14f is completed, the shielding plate 4b shown in FIG.
By opening the opening formed in a, the shutter 4 is opened, the plate P is irradiated with illumination light again (step S26), and the plate P is irradiated using the aerial image measurement device 24. Measure the amount of illumination light (step S2)
8).

Next, the main control system 20 determines whether or not the illumination distribution (variation in light quantity) of the illumination light applied to the plate P is within a predetermined standard based on the measurement result in step S28. to decide. When it is determined that the value is out of the standard (when the determination result is “NO”), the main control system 20 outputs a control signal to the drive device 19 shown in FIG. Is finely adjusted by moving at least one of them in the X-axis direction (step S32). When step S32 ends, the process returns to step S28. Thus, in the present embodiment,
The variable attenuating filters 14b to 14f are monitored while monitoring the amount of illumination light applied to the plate P by the aerial image measuring device 24.
Are adjusted almost continuously. In step S30, when the main control system 20 determines that the illuminance distribution (variation in the amount of light) is within a preset standard (when the determination result is “YES”), a series of steps is ended.

Through the steps described above, the amount of light applied to the plate P is adjusted. In the above description, the light amount adjustment at the time of manufacturing the exposure apparatus has been described. However, for example, at the time of periodic maintenance, after performing step S10 shown in FIG.
Is performed, it is possible to adjust the uneven illuminance distribution caused by the change over time. The neutral density filter 7 is arranged outside the optical path except when performing measurement using the aerial image measuring device 24. When the neutral density filter 7 has the configuration shown in FIG. 3, the neutral density filter 7b is arranged on the optical axis AX1 when performing measurement using the aerial image measurement device 24. In other cases, the cassette 7a is arranged so that the optical axis AX1 passes through substantially the center of the openings 7h and 7i, and the mask M
Is transferred to the plate P. When a high-sensitivity photoresist is applied to the plate P, the neutral density filter 7c is disposed on the optical axis AX1.

As described above, in the present embodiment, the six detection units 61a to 61a are positioned at the positions indicated by solid lines in FIG.
61f, three projection optical units PL1, PL
3, and the optical characteristics of PL5 are measured. Next, the plate stage PS is moved in the scanning direction (X-axis direction), and the four detection units 6 are positioned at the positions indicated by broken lines in FIG.
The optical characteristics of the two projection optical units PL2 and PL4 are measured via 1b to 61e. As a result, the optical characteristics of each projection optical unit can be measured in a short time.

The detection of the optical image in each detection unit 61 is performed with each detection unit 61 kept stationary, that is, with the plate stage PS kept stationary.
Of course, the plate stage PS moves for the detection of the next optical image, but the operation of detecting the optical image itself is performed in a stationary state. In this sense, each detection unit 61 is a stationary sensor, and performs image detection without scanning the large plate stage PS. On the other hand, the conventional slit scan type sensor requires several tens μm
Since it is necessary to perform high-precision scanning of about ~ several hundred μm,
Particularly when a large plate stage is provided, it is very disadvantageous from the viewpoint of measurement time. In other words, in the present embodiment, despite the provision of the large plate stage PS, no scanning operation is required for image detection, so that the detection time and, consequently, the measurement time are very short.

Even if the static sensor of the present embodiment and the conventional slit scan sensor have substantially the same detection accuracy, if the number of measurements within the same time is compared, the static sensor of the present embodiment will Type sensors are much more advantageous. As a result, in the static sensor according to the present embodiment, high measurement accuracy can be realized by an averaging effect based on a large amount of measurement information. Moreover, the transmittance of the variable neutral density filters 14b to 14f is finely adjusted almost continuously on the basis of the result of the measurement with high accuracy. The light amount can also be adjusted.

The exposure apparatus of the present embodiment sets a test mask on which a predetermined test pattern is formed on the mask stage MS, and measures the image of the test pattern with the aerial image measurement device 24, thereby obtaining each test pattern. It is possible to measure the image position, image rotation, magnification, aberration, and the like in the projection optical units PL1 to PL5. Then, based on the measurement result of the aerial image measurement device 24, the main control system 20 may, if necessary, transmit the mask-side magnification correction optical system 35a and the plate-side magnification via the first drive unit 38a and the second drive unit 38b. By driving the correction optical system 35b, each projection optical unit P
The magnification change in L1 to PL5 is adjusted (corrected). Further, the main control system 20 drives the first parallel flat plate 36 and the second parallel flat plate 37 as an image shifter via the third drive unit 39 and the fourth drive unit 40 as necessary. And corrects the fluctuation of the image position in each of the projection optical units PL1 to PL5.

Further, the main control system 20 drives the second right-angle prism 31b as an image rotator via the fifth drive unit 41 as necessary, thereby rotating the image in each of the projection optical units PL1 to PL5. Is corrected. In addition, the main control system 20 changes the pressure in the lens control chamber 44 by a very small amount via the pressure adjusting unit 45 as necessary, so that each of the projection optical units PL1
The change of the focus position in PL5 is corrected. Further, the main control system 20 rotates the lens effective for correction of each aberration along the optical axis direction or the direction orthogonal to the optical axis or tilts the lens with respect to the optical axis as necessary. Corrects symmetric and non-rotationally symmetric aberrations. Further, the main control system 20 corrects the fluctuation of the image position of the field stop image and the image rotation by moving the field stop AS along the XY plane or rotating it around the Z axis as necessary. .

In adjusting the optical characteristics of each of the projection optical units PL1 to PL5, it is ideal that all the optical characteristics of each of the projection optical units PL1 to PL5 are corrected to a desired state. However, it is actually difficult to correct all the optical characteristics of each of the projection optical units PL1 to PL5 to a desired state. In order to realize a good overlapping exposure, the projections adjacent to each other in a partially overlapping portion of the exposure area are required. It is preferable that the optical characteristics of the optical unit are set so as to change according to substantially the same tendency. Specifically, for example, the direction of the field curvature is reversed in the adjacent projection optical units,
In addition, it is preferable that the adjacent projection optical units are set so that the image planes of the partially overlapped portions of the exposure area substantially coincide with each other.
In addition, for example, in the case of various aberrations such as coma, the change in aberration is continuous from a non-overlapping portion (a rectangular portion at the center) to a partially overlapping portion (a triangular portion at both ends) of the exposure region. It is preferable that the correction be made so as to be smooth.

In the above-described embodiment, the case has been described in which the illuminance distribution unevenness of the light applied to the plate P caused by the change with time is adjusted, but similarly, in each of the projection optical units PL1 to PL5. The focus position, magnification, aberration, and the like may be changed due to thermal deformation of a lens or thermal deformation of a deflecting member due to light irradiation during exposure. In this case, while monitoring the light amount of the irradiation light to each of the projection optical units PL1 to PL5 with the aerial image measurement device 24, the fluctuation of these optical characteristics is adjusted (corrected) as needed by referring to a data table or the like obtained in advance. ) Is preferred.

The embodiment of the present invention has been described above.
However, the present invention is not limited to the above embodiment, and the scope of the present invention
It can be changed freely within the box. For example, the above embodiment
Let's take a step-and-scan exposure system as an example.
As described above, the step-and-repeat method
The present invention is also applicable to an exposure apparatus. In the above embodiment,
Is an ultra-high pressure mercury lamp as the light source 1 in the illumination optical system IL
And the required g-line (43
6 nm), h-line (405 nm), and i-line (365).
nm). However,
Not limited to this, KrF excimer laser (248 nm),
ArF excimer laser (193 nm), F _TwoLaser (1
57 nm) as a light source 1 and emit light from these lasers.
The present invention is applied even when using emitted laser light.
It is possible to

Further, in the above-described embodiment, the case of manufacturing a liquid crystal display element has been described as an example. However, it is needless to say that not only an exposure apparatus used for manufacturing a liquid crystal display element but also a display including a semiconductor element, etc. Exposure apparatus for transferring a device pattern onto a semiconductor substrate used in the manufacture of a thin film magnetic head, exposure apparatus for transferring a device pattern onto a ceramic wafer used in the manufacture of a thin film magnetic head, and C
The present invention can be applied to an exposure apparatus used for manufacturing an image pickup device such as a CD.

In the above-described embodiment, the light from the light source 1 is attenuated by the neutral density filter 7 and then guided to the wavelength selection filter 6.
After extracting only the light in the predetermined wavelength range from the light from
A configuration in which the light is guided to the neutral density filters 6, 13b to 13f, and 14b to 14f is also possible. In this case, since the energy of the light from the light source 1 through the wavelength selection filter 6 has been reduced by the wavelength extraction in the wavelength selection filter 6, the light reduction filters 6, 13b to 13f, and 14b to 14 have been reduced.
There is an advantage that damage at f can be reduced. Further, in the above-described embodiment, the heat sink 9 having a plurality of heat sinks is provided.
Was used to release the heat generated when the light reflected by the neutral density filter 7 was absorbed by the light absorbing plate 8. The light absorbing plate 8 may be cooled. In the above embodiment, the light emitting ends 11b to 11f of the light guide 11 are provided.
Although the configuration in which the neutral density filters 13b to 13f and the variable neutral density filters 13b to 13f are provided has been described, the present invention relates to the light guide 11 in which the emission ends 11b to 11f are provided.
The present invention can also be applied to a case where a neutral density filter and a variable neutral density filter are arranged for at least one of the above.

For example, in the above-described embodiment, a portion to be irradiated with the light having the smallest light amount among the light amounts irradiated on the plate P via the projection optical units PL1 to PL5 is specified, and the light is irradiated in accordance with the smallest light amount. Darkening filter 13a
Ｆ13f was set. However, the other projection optical system units PL are always referred to based on the amount of light that
The light amount of light passing through 2 to PL5 may be adjusted. In this case, the neutral density filter 13b and the variable neutral density filter 13b for adjusting the amount of light passing through the projection optical unit PL1 become unnecessary.

As described above, in this embodiment, the aerial image measuring device 24 is used to quickly measure the illuminance distribution of the light applied to the plate P. However, if only the illuminance distribution is measured, This does not mean that a conventional slit scan sensor cannot be used. Therefore, for example, when the device configuration is required to be more simplified than the time required for measuring the illuminance distribution, the illuminance distribution may be measured using a conventional slit scan type sensor instead of the aerial image measurement device 24. .

In the above-described embodiment, the case where the aerial image measuring device 24 includes the two-dimensional image sensor 63 has been described as an example. However, the present invention is not limited to this. It can also be used. Also in this case, the image detection itself in the one-dimensional CCD is performed with the plate stage kept still. In the above-described embodiment, six detection units are arranged along the Y direction. However, various modifications can be made to the number and arrangement of the six detection units. In this regard, for example, image detection can be performed by a pair of detection units spaced apart along the Y-axis direction, or in some cases, image detection can be performed by a single detection unit.

Further, in the above-described embodiment, the present invention is applied to the multi-scan type projection exposure apparatus in which each of the projection optical units PL1 to PL5 has a pair of imaging optical systems. Alternatively, the present invention can be applied to a multi-scan projection exposure apparatus of a type having three or more imaging optical systems. Further, in the above-described embodiment, the present invention is applied to the multi-scanning type projection exposure apparatus in which each of the projection optical units PL1 to PL5 has a catadioptric imaging optical system, but is not limited thereto. For example, the present invention can be applied to a multi-scan type projection exposure apparatus having a refraction type image forming optical system.

Next, an embodiment of a method of manufacturing a micro device using an exposure apparatus according to an embodiment of the present invention in a lithography process will be described. FIG. 11 is a flowchart of a method for obtaining a semiconductor device as a micro device. First, in step S40 of FIG. 11, a metal film is deposited on one lot of wafers. In the next step S42, a photoresist is applied on the metal film on the wafer of the one lot. Thereafter, in step S44, using the exposure apparatus shown in FIG. 1, the pattern image on the mask M is sequentially exposed to each shot area on the wafer of the lot through the projection optical system (projection optical unit). Transcribed.

Thereafter, in step S46, the first
After the development of the photoresist on the wafer of the lot is performed, in step S48, etching is performed on the wafer of the lot using the resist pattern as a mask, so that a circuit pattern corresponding to the pattern on the mask is formed on each wafer. It is formed in each upper shot area. Thereafter, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like. According to the above-described semiconductor device manufacturing method, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.

In the exposure apparatus shown in FIG. 1, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Less than,
An example of the technique at this time will be described with reference to the flowchart in FIG. FIG. 12 is a flowchart of a method for obtaining a liquid crystal display element as a micro device by forming a predetermined pattern on a plate using the exposure apparatus of the present embodiment.

In FIG. 12, in a pattern forming step S50, a so-called optical lithography step of transferring and exposing a mask pattern onto a photosensitive substrate (a glass substrate coated with a resist) using the exposure apparatus of the present embodiment is performed. You. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to a developing process, an etching process, a reticle peeling process, and other processes to form a predetermined pattern on the substrate.
Move to 2.

Next, in the color filter forming step S52, R (Red), G (Green), B (Blue)
Are arranged in a matrix in a large number, or a color filter is formed by arranging a plurality of R, G, and B stripe filter sets in a horizontal scanning line direction. Then, a color filter forming step S52
, A cell assembling step S54 is performed. In the cell assembling step S54, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern forming step S50, the color filters obtained in the color filter forming step S52, and the like.

In the cell assembling step S54, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S50 and the color filter obtained in the color filter forming step S52. (Liquid crystal cell). Then, the module assembly process S5
At 6, each component such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) is attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display device, a liquid crystal display device having an extremely fine circuit pattern can be obtained with high throughput.

[0087]

As described above, according to the present invention, after the light emitted from the light source is attenuated by the dimming member arranged obliquely with respect to the optical path, a predetermined value is set by the wavelength selecting member. Since the light of the wavelength is selected, the optical characteristics are deteriorated due to the multiple reflection between the dimming member and the wavelength selecting member when measuring the light amount of the light irradiated on the photosensitive substrate (for example, the light amount change). ) Can be prevented. Further, according to the present invention, of the light emitted from the light source, the light reflected by the light reducing member is absorbed by the absorbing member, so that the light reflected by the light reducing member is transmitted to the exposure apparatus. This has the effect that thermal effects or optical effects (for example, stray light) can be prevented. Further, according to the present invention, when the light amount of the light applied to the photosensitive substrate is measured by the measuring device, the control device arranges the dimming member in a state inclined with respect to the optical path from the light source. Even if the light amount of the light emitted from the light source is equal to or more than the light amount that can be measured by the measuring device, the light amount of the light irradiated on the photosensitive substrate can be adjusted to the light amount that can be measured by the measuring device. This has the effect. In addition, since the dimming member is arranged at an angle to the optical path, there is no adverse effect such as multiple reflection that occurs when the dimming member is arranged in the optical path, and as a result, high precision measurement is realized. There is an effect that can be.
Further, according to the present invention, since the light amount adjusting member for coarse adjustment and the light amount adjusting member for fine adjustment are provided in the optical path from the light source to the mask, the light amount of the light applied to the mask, and eventually the photosensitive substrate When adjusting the light quantity of the irradiated light, the light quantity is set to a desired level (level) by the light quantity adjustment member for coarse adjustment, and the light quantity at that level is maintained by the light quantity adjustment member for fine adjustment. Can be fine-tuned. Therefore, there is an effect that the light amount can be quickly and accurately adjusted.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an overall schematic configuration of an exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a side view of the illumination optical system IL.

FIG. 3 is a perspective view showing an example of a specific configuration of the neutral density filter 7;

FIG. 4 is a top view illustrating an example of a neutral density filter 13b.

FIG. 5 is a top view showing an example of the variable neutral density filter 14b.

FIG. 6 is a side view showing an example of the configuration of the projection optical unit PL1.

7 is a diagram schematically showing a configuration of a mask-side magnification correcting optical system 35a and a plate-side magnification correcting optical system 35b of FIG. 6;

FIG. 8 is a perspective view showing a schematic configuration of the aerial image measurement device 24.

FIG. 9 is a flowchart illustrating a procedure of a process of equalizing the amount of light irradiated on the plate P via each of the projection optical units PL1 to PL5.

FIG. 10 is an explanatory diagram of a method of measuring the amount of light emitted to the plate P via each projection optical unit in the present embodiment.

FIG. 11 is a flowchart of a method for obtaining a semiconductor device as a micro device.

FIG. 12 is a flowchart of a method for obtaining a liquid crystal display element as a micro device by forming a predetermined pattern on a plate using the exposure apparatus of the present embodiment.

[Explanation of symbols]

Reference Signs List 1 light source 6 wavelength selection filter (wavelength selection member) 7 light reduction filter (light reduction member, light amount adjustment member for coarse adjustment) 8 light absorption plate (light absorption member) 9 heat sink (heat radiation member) 11 light guide (division optical system) 13b １３13f ND filter (light adjustment member for coarse adjustment) 14b１４14f Variable ND filter (light adjustment member for fine adjustment) 20 Main control system (control device) 24 Aerial image measurement device (measurement device) DP pattern M Mask P plate (photosensitive substrate) PL Projection optical system PL1 to PL5 Projection optical unit (partial optical system) PS Plate stage (substrate stage)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H097 BA02 BA06 BB01 BB02 CA02 CA06 EA03 GB02 JA01 JA03 LA10 LA12 LA17 5F046 BA05 CB08 CB09 CB23 CB25 DA01 DA02

Claims (21)

[Claims] 1. An exposure apparatus for irradiating a mask with light emitted from a light source and transferring a pattern formed on the mask to a photosensitive substrate, wherein the exposure apparatus is inclined with respect to an optical path between the light source and the mask. A light reducing member arranged to reduce the light emitted from the light source, and a wavelength selecting member for selecting light having a predetermined wavelength from the light transmitted through the light reducing member. apparatus. 2. An exposure apparatus for irradiating a mask with light emitted from a light source and transferring a pattern formed on the mask to a photosensitive substrate, the exposure apparatus being inclined with respect to an optical path between the light source and the mask. And a dimming unit that diminishes light emitted from the light source, and is disposed in an optical path between the light source and the dimming unit, and selects light having a predetermined wavelength from the light from the light source. An exposure apparatus, comprising: 3. An exposure apparatus for irradiating a mask with light emitted from a light source and transferring a pattern formed on the mask to a photosensitive substrate, wherein the exposure device is inclined with respect to an optical path between the light source and the mask. An exposure apparatus, comprising: a light-reducing member arranged to reduce light emitted from the light source; and a light-absorbing member absorbing light reflected by the light-reducing member. 4. An exposure apparatus according to claim 3, wherein a heat radiating member is attached to said light absorbing member. 5. The exposure apparatus according to claim 1, wherein the dimming member is configured to be able to advance and retreat with respect to the optical path. 6. An exposure apparatus for irradiating a mask with light emitted from a light source and transferring a pattern formed on the mask to a photosensitive substrate, wherein the exposure apparatus moves back and forth with respect to an optical path between the light source and the mask. A light-reducing member configured to be able to freely reduce light emitted from the light source, a substrate stage configured to be movable in a state where the photosensitive substrate is mounted, and provided on the substrate stage; A measuring device for measuring light irradiated on the photosensitive substrate, and a control for disposing the dimming member in a state inclined with respect to the optical path when measuring the light irradiated on the photosensitive substrate with the measuring device. And an exposure apparatus. 7. The exposure apparatus according to claim 1, wherein the dimming member is formed of metal or ceramic. 8. The apparatus according to claim 1, further comprising a division optical system that divides at least the light passing through the dimming member into a plurality of parts and irradiates the light to the mask. Exposure equipment. 9. A light source, which is disposed between the mask and the photosensitive substrate, and which is split by the split optical system and transmitted through the mask, is projected onto the photosensitive substrate via a different partial optical system. The exposure apparatus according to claim 8, further comprising a projection optical system. 10. An exposure apparatus which irradiates a mask with light emitted from a light source and transfers a pattern formed on the mask to a photosensitive substrate, wherein the exposure apparatus is provided in an optical path from the light source to the mask, A light amount adjusting member that adjusts a light amount of light emitted from the light source on the photosensitive substrate, wherein the light amount adjusting member includes a light amount adjusting member for coarse adjustment and a light amount adjusting member for fine adjustment. An exposure apparatus characterized by the following. 11. The exposure apparatus according to claim 10, wherein the light amount adjusting member for fine adjustment can change transmittance substantially continuously. 12. The light amount adjusting member for rough adjustment and the light amount adjusting member for fine adjustment are arranged so as to be inclined with respect to the optical path. Item 12. An exposure apparatus according to Item 11. 13. The light amount adjusting member for coarse adjustment and / or the light amount adjusting member for fine adjustment is made of metal or ceramics. The exposure apparatus according to claim 1. 14. The light amount adjusting member for coarse adjustment is provided in an optical path between the light source and the photosensitive substrate, and the light amount adjusting member for fine adjustment is the light amount adjusting member for coarse adjustment. The exposure apparatus according to any one of claims 10 to 13, wherein the exposure apparatus is provided between the photosensitive substrate and the photosensitive substrate. 15. A split optical system for splitting light emitted from the light source into a plurality of light components, wherein the light amount adjusting member for coarse adjustment is provided in an optical path between the light source and the split optical system. The exposure apparatus according to claim 14, wherein the light amount adjusting member for fine adjustment is provided between the split optical system and the photosensitive substrate. 16. A partial optical system which is disposed in an optical path between the mask and the photosensitive substrate, and which transmits each light emitted from each emission end of the divided optical system and transmitted through the mask to a different partial optical system. 16. The exposure apparatus according to claim 15, further comprising a projection optical system for projecting the light on the photosensitive substrate via the light source. 17. A semiconductor device further comprising: a substrate stage configured to be movable with the photosensitive substrate mounted thereon; and a measuring device provided on the substrate stage and measuring light emitted to the photosensitive substrate. The exposure apparatus according to any one of claims 10 to 16, wherein: 18. An exposure step of exposing a pattern formed on the mask to the photosensitive substrate using the exposure apparatus according to claim 1; and exposing the exposed photosensitive layer to the photosensitive substrate. And a developing step of developing the substrate. 19. A light source comprising: a light source; and a splitting optical system for splitting light from the light source into a plurality of parts, and irradiating the mask with the light split by the splitting optical system, thereby forming a pattern formed on the mask on a photosensitive substrate. In the manufacturing method of the exposure apparatus for transferring to the above, on the photosensitive substrate, a measurement step of measuring the amount of each light emitted from the divided optical system and passing through the mask, the smallest measured in the measurement step A coarse adjustment step of selecting a light amount adjustment member for coarse adjustment according to the amount of light and arranging it between the divided optical system and the mask; and a fine adjustment between the divided optical system and the mask. A fine adjustment step of arranging a light amount adjusting member and adjusting the light amount of the light split by the splitting optical system on the photosensitive substrate to be substantially constant. 20. The dimming member setting step of arranging a dimming member for dimming light from the light source in a state inclined with respect to an optical path between the light source and the split optical system. A split light measurement step provided on a substrate stage on which the photosensitive substrate is mounted, and sequentially measuring the light split by the split optical system using a measurement device for measuring light emitted to the substrate stage. 2. The method according to claim 1, further comprising:
10. The method for manufacturing an exposure apparatus according to item 9. 21. An exposure step of exposing a pattern formed on the mask to the photosensitive substrate using an exposure apparatus manufactured by using the manufacturing method according to claim 19 or 20. And a developing step of developing the photosensitive substrate.