JP2002318556A - Active matrix type planar display device and manufacturing method therefor - Google Patents
Active matrix type planar display device and manufacturing method thereforInfo
- Publication number
- JP2002318556A JP2002318556A JP2001122485A JP2001122485A JP2002318556A JP 2002318556 A JP2002318556 A JP 2002318556A JP 2001122485 A JP2001122485 A JP 2001122485A JP 2001122485 A JP2001122485 A JP 2001122485A JP 2002318556 A JP2002318556 A JP 2002318556A
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- Japan
- Prior art keywords
- electrode
- display device
- active matrix
- matrix type
- auxiliary wiring
- Prior art date
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Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 45
- 238000005401 electroluminescence Methods 0.000 description 33
- 239000010408 film Substances 0.000 description 32
- 238000005192 partition Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネセンス(EL)表示装置等の平面表示装置およびそ
の製造方法に係り、特に各表示素子にスイッチング素子
が設けられたアクティブマトリクス型平面表示装置およ
びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat display device such as an organic electroluminescence (EL) display device and a method of manufacturing the same, and more particularly to an active matrix type flat display device having a switching element for each display element. It relates to the manufacturing method.
【0002】[0002]
【従来の技術】CRTディスプレイに対して、薄型、軽
量、低消費電力の特徴を生かして、液晶表示装置に代表
される平面表示装置の需要が急速に伸びてきた。中で
も、各表示素子毎にスイッチ素子が設けられたアクティ
ブマトリクス型平面表示装置は、隣接表示素子間でのク
ロストークのない良好な表示品位が得られることから、
携帯情報機器を始め、種々のディスプレイに利用される
ようになってきた。2. Description of the Related Art Demand for flat display devices such as liquid crystal display devices has been rapidly increasing by making use of the features of thinness, light weight, and low power consumption with respect to CRT displays. Among them, an active matrix type flat display device in which a switch element is provided for each display element can obtain good display quality without crosstalk between adjacent display elements.
It has been used for various displays including portable information devices.
【0003】近年では、液晶表示装置に比べて高速応答
及び広視野角化が可能な自己発光型のディスプレイとし
て有機エレクトロルミネセンス(EL)表示装置の開発
が盛んに行われている。In recent years, an organic electroluminescence (EL) display device has been actively developed as a self-luminous display device capable of responding faster and having a wider viewing angle than a liquid crystal display device.
【0004】有機EL表示装置は、有機ELパネルと有
機ELパネルを駆動する外部駆動回路から構成される。
有機ELパネルはガラス等の支持基板上に、第1電極
と、第1電極と対向して配置される第2電極と、これら
電極間に有機発光層を備えた表示素子をマトリクス状に
配置して構成される表示領域と、外部駆動回路からの信
号に基づいて各表示素子を駆動する駆動回路領域とから
構成される。[0004] The organic EL display device comprises an organic EL panel and an external drive circuit for driving the organic EL panel.
An organic EL panel has a first electrode, a second electrode arranged opposite to the first electrode, and a display element having an organic light emitting layer interposed between these electrodes arranged in a matrix on a supporting substrate such as glass. And a drive circuit area for driving each display element based on a signal from an external drive circuit.
【0005】この有機EL表示装置のEL発光を外部に
取り出す方式には、支持基板を介して外部に取り出す下
面発光方式と、支持基板と対向する側に取り出す上面発
光方式とがある。[0005] As a method of taking out the EL light emission of this organic EL display device to the outside, there are a bottom emission method of taking out light through a support substrate and a top emission method of taking out light to the side opposite to the support substrate.
【0006】アクティブマトリクス型の下面発光方式の
有機EL表示装置は、有機発光層の下部にEL発光の透
過を阻止する薄膜トランジスタ(TFT)等の回路が配
置されるため、十分な開口率を確保することが難しく、
このため光利用効率の向上が課題となっている。In an active matrix type organic EL display device of the bottom emission type, a circuit such as a thin film transistor (TFT) for blocking transmission of EL light emission is arranged below the organic light emitting layer, so that a sufficient aperture ratio is secured. Difficult
For this reason, improvement in light use efficiency has been a problem.
【0007】これに対して、上面発光方式の有機EL表
示装置は、支持基板と対向する側にEL発光を取り出す
ため、支持基板側に配置される回路に制約されずに開口
率を決定されるため、高い光利用効率の確保が可能とな
る。On the other hand, in the top emission type organic EL display device, since the EL emission is taken out on the side facing the support substrate, the aperture ratio is determined without being restricted by the circuit arranged on the support substrate side. Therefore, high light use efficiency can be secured.
【0008】[0008]
【発明が解決しようとする課題】ところで平面表示装置
においては、光取出し側にある電極に光透過性の導電膜
を用いることが必須であり、上面発光方式でアクティブ
マトリクス型を採用する場合には、光取出し側に配置さ
れる共通電極を光透過性の導電膜で作成する必要があ
る。ところが一般に、光透過性を有する透明導電材料
は、通常の金属材料と比較して抵抗率が2−3桁程度高
いことが知られている。In a flat panel display device, it is essential to use a light-transmitting conductive film for an electrode on the light extraction side. In addition, the common electrode disposed on the light extraction side needs to be formed of a light-transmitting conductive film. However, in general, it is known that a transparent conductive material having optical transparency has a resistivity that is about two to three orders of magnitude higher than that of a normal metal material.
【0009】このため、光取出側の電極の画面面内で電
極電圧が不均一となることがあり、表示品位を低下させ
る原因となっていた。For this reason, the electrode voltage may become non-uniform in the screen surface of the electrode on the light extraction side, which has been a cause of deteriorating the display quality.
【0010】このことは、特に画面サイズが大きくなる
ほど顕著であり、このため画面サイズに制約が生じる等
の問題もあった。[0010] This is particularly remarkable as the screen size increases, and there is a problem that the screen size is restricted.
【0011】本発明は、上記技術課題に対してなされた
もので、表示面内で表示ムラの少ないアクティブマトリ
クス型平面表示装置およびその製造方法を提供すること
を目的としている。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned technical problem, and has as its object to provide an active matrix type flat display device having less display unevenness in a display surface and a method of manufacturing the same.
【0012】また本発明は、表示品位が画面サイズの制
約を受けないアクティブマトリクス型平面表示装置を提
供することを目的とし、またその生産性を損なうことの
ない製造方法を提供することを目的としている。It is another object of the present invention to provide an active matrix type flat display device whose display quality is not restricted by the screen size, and to provide a manufacturing method which does not impair the productivity. I have.
【0013】[0013]
【課題を解決するための手段】請求項1記載の発明は、
基板上に配置される複数の走査信号線と、前記走査信号
線に略直交して配置される複数の映像信号線と、これら
交点付近に配置されるスイッチング素子と、前記スイッ
チング素子に接続され、第1電極および第2電極間に独
立島状に形成される光変調層を備えた表示素子がマトリ
クス状に配置されるアクティブマトリクス型平面表示装
置において、前記第1電極と同層に形成され、かつ前記
第1電極とは電気的に絶縁され、前記第2電極と電気的
に接続された補助配線とを備えたことを特徴とする。According to the first aspect of the present invention,
A plurality of scanning signal lines arranged on a substrate, a plurality of video signal lines arranged substantially orthogonal to the scanning signal lines, a switching element arranged near these intersections, connected to the switching element, In an active matrix type flat display device in which display elements each having a light modulation layer formed in an independent island shape between a first electrode and a second electrode are arranged in a matrix, the display elements are formed in the same layer as the first electrode, The first electrode is electrically insulated from the first electrode and includes an auxiliary wiring electrically connected to the second electrode.
【0014】[0014]
【発明の実施の形態】以下、本発明の一実施形態に係る
アクティブマトリクス型平面表示装置として自己発光型
のディスプレイ、有機EL表示装置を例にとり、図面を
用いて詳細に説明する。図1は、この実施形態に係るア
クティブマトリクス型有機EL表示装置1の概略平面図
で、図2は、図1の表示領域の一部を拡大した一部概略
平面図、図3は、図2のA−A線に沿って切断した時の
断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A self-luminous display and an organic EL display will be described as examples of an active matrix type flat display according to an embodiment of the present invention with reference to the drawings. FIG. 1 is a schematic plan view of an active matrix type organic EL display device 1 according to this embodiment. FIG. 2 is a partially schematic plan view in which a part of the display region in FIG. 1 is enlarged. FIG. 4 is a cross-sectional view taken along line AA of FIG.
【0015】有機ELパネル2の表示領域について詳し
く説明すると、この実施形態では10.4型サイズの表
示領域が構成され、ガラス等の絶縁基板101上に映像
信号線109と走査信号線107とがマトリクス状に配
置され、その交差部にスイッチング素子SW1としてn
型TFT、映像信号電圧保持用コンデンサ110、駆動
用制御素子SW2としてp型TFT、有機EL表示素子
Pが形成される。The display area of the organic EL panel 2 will be described in detail. In this embodiment, a 10.4-inch size display area is formed, and a video signal line 109 and a scanning signal line 107 are formed on an insulating substrate 101 made of glass or the like. The switching elements SW1 are arranged in a matrix, and
A p-type TFT and an organic EL display element P are formed as a type TFT, a video signal voltage holding capacitor 110, and a drive control element SW2.
【0016】有機EL表示素子Pは、駆動用制御素子S
W2に接続された光反射性導電膜からなる第1電極11
7と、第1電極117上に配置される有機発光層121
と、有機発光層121を介して第1電極117に対向配
置された第2電極122と、を備えている。尚、有機発
光層121は、各色共通に形成されるホール輸送層、エ
レクトロン輸送層、及び各色毎に形成される発光層の3
層積層で構成されてもよく、機能的に複合された2層ま
たは単層で構成されてもよい。この有機発光層121
は、各表示素子Pを分離する黒色レジスト材料からなる
厚さ3μmの隔壁120の開口部120bから露出され
る第1電極117上に配置される。The organic EL display element P includes a driving control element S
First electrode 11 made of a light-reflective conductive film connected to W2
7 and the organic light emitting layer 121 disposed on the first electrode 117
And a second electrode 122 disposed opposite the first electrode 117 with the organic light emitting layer 121 interposed therebetween. The organic light emitting layer 121 includes a hole transport layer, an electron transport layer, and a light emitting layer formed for each color.
It may be composed of a layer stack, or may be composed of functionally composite two layers or a single layer. This organic light emitting layer 121
Are arranged on the first electrode 117 exposed from the opening 120b of the partition 120 having a thickness of 3 μm and made of a black resist material for separating the display elements P.
【0017】この有機EL表示装置1は第2電極122
側を表示面とした上面発光方式であり、有機EL表示素
子Pの第2電極122は、光透過性を有する導電膜で構
成される。光透過性導電膜は、材料自体の透明度が高い
透明導電材料を用いる、或いは透明度が低い材料を薄く
形成して光透過性をもたせるなどして形成できる。ここ
では、Baを光透過する程度に薄く、例えば膜厚10n
mに成膜し、透明導電膜として全表示素子にわたって共
通に形成した。この光透過性導電膜のシート抵抗はおよ
そ105Ω/□であった。The organic EL display device 1 has a second electrode 122
This is a top emission method in which the side is a display surface, and the second electrode 122 of the organic EL display element P is formed of a light-transmitting conductive film. The light-transmitting conductive film can be formed by using a transparent conductive material having a high transparency of the material itself, or by forming a thin material having a low transparency to have a light-transmitting property. Here, Ba is thin enough to transmit light, for example, a film thickness of 10 n
m, and was formed in common as a transparent conductive film over all display elements. The sheet resistance of this light transmitting conductive film was approximately 10 5 Ω / □.
【0018】また、図3に示すように第1電極117と
同層に設けられた補助配線118と第2電極122と
は、隔壁120に補助配線118を露出するように設け
られたコンタクト部120aを介して電気的に接続され
る。この補助配線118は、第1電極117とは隔壁1
20にて電気的に絶縁され、各表示素子Pの第1電極1
17を囲むよう格子状に設けられており、それぞれ表示
領域にわたり互いに連結されている。As shown in FIG. 3, the auxiliary wiring 118 and the second electrode 122 provided on the same layer as the first electrode 117 are connected to a contact portion 120 a provided on the partition 120 so as to expose the auxiliary wiring 118. Are electrically connected via The auxiliary wiring 118 is formed between the first electrode 117 and the partition 1.
The first electrode 1 of each display element P is electrically insulated at 20.
17, and are connected to each other over the display area.
【0019】このように第2電極122と電気的に接続
される補助配線118を表示領域全体に均等に備えるの
で、光取出し側電極の画面面内での電位のバラツキを抑
制することが可能となる。Since the auxiliary wiring 118 electrically connected to the second electrode 122 is uniformly provided in the entire display area, it is possible to suppress the variation in the potential of the light extraction-side electrode in the screen. Become.
【0020】ここで、補助配線118としては、第2電
極を形成する透明導電膜と比し抵抗が十分小さいこと、
より具体的には11×10−6Ωcm以下の抵抗率の導
電材料で形成されることが望ましい。このように補助配
線に低抵抗な導電材料を用いることで、光取出し側電極
の画面面内での電位バラツキをより一層低減することが
できる。Here, the auxiliary wiring 118 has sufficiently smaller resistance than the transparent conductive film forming the second electrode;
More specifically, it is desirable to be formed of a conductive material having a resistivity of 11 × 10 −6 Ωcm or less. By using a low-resistance conductive material for the auxiliary wiring as described above, it is possible to further reduce the potential variation in the screen surface of the light extraction side electrode.
【0021】表1に補助配線として選択され得る代表的
な金属材料の抵抗率と、透明導電材料の抵抗率を示す。
[表1] Table 1 shows the resistivity of a typical metal material that can be selected as an auxiliary wiring and the resistivity of a transparent conductive material.
[Table 1]
【0022】特に、補助配線118には1×10−6Ω
cm〜6×10−6Ωcm程度の抵抗率の導電材料を使
用することが望ましく、単一材料であっても複数の材料
を積層したものであってもよい。In particular, the auxiliary wiring 118 has 1 × 10 −6 Ω
It is desirable to use a conductive material having a resistivity of about cm to 6 × 10 −6 Ωcm, and it may be a single material or a laminate of a plurality of materials.
【0023】本実施例においては、補助配線118は、
第1電極と同一材料で形成され、Al、Mo、ITOの
3層が積層され抵抗率4×10−6Ωcmの導電材料を
用いて、シート抵抗10−1Ω/□となるよう形成され
ている。このMoは、ITOとAlとが直接接触するこ
とによる腐食防止のために設けられており、この機能を
有するものであればよく、例えばTi、W等であっても
よい。In the present embodiment, the auxiliary wiring 118
It is formed of the same material as the first electrode, is formed by stacking three layers of Al, Mo, and ITO and using a conductive material having a resistivity of 4 × 10 −6 Ωcm to have a sheet resistance of 10 −1 Ω / □. I have. This Mo is provided to prevent corrosion due to direct contact between ITO and Al, and may be any material having this function, for example, Ti, W, or the like.
【0024】このようにして構成される有機EL表示装
置では、光取出し側電極、ここでは陰極電位の面内ばら
つきを従来に比べて十分に低減でき、本実施形態におい
ては10型サイズ超の画面サイズにも関わらず面内での
輝度分布を±3cd/m2以内に抑えることができた。In the organic EL display device thus constructed, the in-plane variation of the light extraction side electrode, here the cathode potential, can be sufficiently reduced as compared with the conventional one. Regardless of the size, the in-plane luminance distribution could be suppressed to within ± 3 cd / m 2 .
【0025】図4(a)〜(e)は、第2電極電源線と
補助配線の配置の例を示しており、図5(a)〜(c)
は、図4の(a)〜(c)の表示領域の一部を拡大した
ものである。上述の実施例においては、図4(a)に示
すように、各表示素子Pの第1電極117周囲を包囲
し、互いに連結されたパターン(図5(a))で表示領
域に均等に配置された補助配線118を設けたが、これ
に限定されず種々のパターンで形成することができ、少
なくとも補助配線118と第1電極117が電気的に分
離され、且つ補助配線118と第2電極122とが電気
的に接続されていればよい。例えば、図4(b)に示す
ように、表示領域を囲む矩形枠状の第2電極電源線11
9の内部に、マトリクス状に補助配線118を形成し、
第2電極電源線119から遠い矩形枠状の中心部では補
助配線118を密に形成し、第2電極電源線119に近
い矩形枠状の内側周辺部分では補助配線118を疎に形
成し、パネル面内で密度を変化(図5(b))させても
よい。また、補助配線118は直線状でなくてもよく、
図4(c)、(d)に示すように、第1電極117の周
囲をジグザグ状(図5(c))に形成してもよい。ま
た、図4(e)に示すように、第2電極電源線内側にス
トライプ状に形成するものでもよい。また、画素のサイ
ズを色毎に変え、隣接第1電極間の距離に対応して大き
さが決定される補助配線を設けてもよく、画面サイズ、
画素数等の条件により、適宜最適なパターンを採用する
ことができる。FIGS. 4A to 4E show examples of the arrangement of the second electrode power supply line and the auxiliary wiring, and FIGS. 5A to 5C.
Is an enlarged view of a part of the display area of (a) to (c) of FIG. In the above-described embodiment, as shown in FIG. 4A, the periphery of the first electrode 117 of each display element P is surrounded and evenly arranged in the display area in a mutually connected pattern (FIG. 5A). Although the provided auxiliary wiring 118 is provided, the present invention is not limited to this, and can be formed in various patterns. At least the auxiliary wiring 118 and the first electrode 117 are electrically separated, and the auxiliary wiring 118 and the second electrode 122 are formed. And may be electrically connected. For example, as shown in FIG. 4B, a rectangular frame-shaped second electrode power supply line 11 surrounding a display area is provided.
9, auxiliary wirings 118 are formed in a matrix,
The auxiliary wirings 118 are formed densely in the center portion of the rectangular frame far from the second electrode power supply line 119, and the auxiliary wirings 118 are formed sparsely in the inner peripheral portion of the rectangular frame close to the second electrode power supply line 119. The density may be changed in the plane (FIG. 5B). Further, the auxiliary wiring 118 may not be linear,
As shown in FIGS. 4C and 4D, the periphery of the first electrode 117 may be formed in a zigzag shape (FIG. 5C). Further, as shown in FIG. 4 (e), a stripe may be formed inside the second electrode power supply line. Further, the size of the pixel may be changed for each color, and an auxiliary wiring whose size is determined according to the distance between the adjacent first electrodes may be provided.
An optimal pattern can be appropriately adopted depending on conditions such as the number of pixels.
【0026】このように、第1電極が独立島状に設けら
れ、第2電極が表示素子にわたって共通に配置されるア
クティブマトリクス型を採用するので、第1電極と同層
に、隣接画素間で連結した補助配線を設けることができ
る。As described above, the active matrix type in which the first electrodes are provided in the form of independent islands and the second electrodes are commonly arranged over the display elements is employed. A connected auxiliary wiring can be provided.
【0027】また、本発明によれば、隣接する表示素子
間に一定電位を持つ補助配線が配設されていることによ
り、画素間の容量カップリングを軽減できクロストーク
等の表示品悪化の原因を取除きより高品位の表面表示装
置を達成することができる。Further, according to the present invention, since the auxiliary wiring having a constant potential is provided between the adjacent display elements, the capacitive coupling between pixels can be reduced, and the display quality such as crosstalk is deteriorated. Thus, a higher quality surface display device can be achieved.
【0028】また、TFT上に絶縁層116を介して第
1電極117が形成されるので、絶縁層116下のTF
Tや配線上に表示素子Pを重ねて形成することが可能と
なり、上面発光方式による開口率をTFT等の回路に制
約されずに決定することができ、高い光利用効率を得る
ことができる。Further, since the first electrode 117 is formed on the TFT via the insulating layer 116, the TF under the insulating layer 116 is formed.
The display element P can be formed so as to overlap the T or the wiring, and the aperture ratio by the top emission method can be determined without being restricted by a circuit such as a TFT, and a high light use efficiency can be obtained.
【0029】また、上述の実施例においては、表示素子
の上部電極(第2電極)となる透明電極材料に膜厚の薄
いBaを用いる場合について説明したが、その他種々の
透明導電材料を選択することができ、有機発光層の材料
に適した材料を採用することが望ましい。第2電極は複
数の積層膜から構成することもでき、Ba,Ca等を薄
く形成した上からITOやSnOを積層させてもよい。
また、第2電極を陽極とする場合には、材料自体の透明
度が高いITOやIZO(Indium ZnOxid
e)を透明電極材料として用いることができる。表示素
子の下部電極となる材料も有機発光層に適した材料を選
択することが望ましく、電極の極性にも適した材料を選
択することが望ましい。Further, in the above-described embodiment, the case where Ba having a small film thickness is used as the transparent electrode material for the upper electrode (second electrode) of the display element has been described, but other various transparent conductive materials are selected. It is preferable to employ a material suitable for the material of the organic light emitting layer. The second electrode may be composed of a plurality of laminated films, and may be formed by laminating Ba, Ca, etc., and then laminating ITO or SnO.
When the second electrode is used as an anode, ITO or IZO (Indium ZnOxid) having high transparency of the material itself is used.
e) can be used as a transparent electrode material. It is desirable to select a material suitable for the organic light emitting layer also as a material for the lower electrode of the display element, and it is desirable to select a material suitable for the polarity of the electrode.
【0030】以上説明したように、本実施形態によれば
第2電極に補助配線を接続するので、光取出し側電極全
体の抵抗を下げることができ、表示面内で表示ムラを十
分に抑制することができる。As described above, according to the present embodiment, since the auxiliary wiring is connected to the second electrode, the resistance of the entire electrode on the light extraction side can be reduced, and the display unevenness in the display surface can be sufficiently suppressed. be able to.
【0031】次に、本発明の有機EL表示装置の製造方
法について説明する。まず、常圧CVDあるいはプラズ
マCVDにより、ガラス等の絶縁基板101上にアンダ
ーコート層102としてSiN膜、SiO2膜を堆積
し、その上にアモルファスシリコン膜を堆積する。ここ
で、TFTのしきい値制御のため基板全面にボロン
(B)等のp型不純物をドープしてもよい。Next, a method for manufacturing the organic EL display device of the present invention will be described. First, a SiN film and a SiO2 film are deposited as an undercoat layer 102 on an insulating substrate 101 made of glass or the like by normal pressure CVD or plasma CVD, and an amorphous silicon film is deposited thereon. Here, the entire surface of the substrate may be doped with a p-type impurity such as boron (B) for controlling the threshold value of the TFT.
【0032】次に、アモルファスシリコン膜をエキシマ
レーザでアニール処理し、アモルファスシリコン膜を多
結晶シリコン膜に結晶化させる。Next, the amorphous silicon film is annealed by an excimer laser to crystallize the amorphous silicon film into a polycrystalline silicon film.
【0033】さらに、その多結晶シリコン膜にレジスト
を塗布し、露光・パターニング・エッチング処理を施
し、多結晶シリコン膜を島状に形成する。Further, a resist is applied to the polycrystalline silicon film, and exposure, patterning and etching processes are performed to form the polycrystalline silicon film in an island shape.
【0034】続いて、多結晶シリコン膜を覆って全面
に、CVDによりSiOxを成膜し、ゲート絶縁膜10
3を形成する。このゲート絶縁膜103上にゲート金属
膜としてMoWを堆積し、フォトリソグラフィー技術を
用いてp型TFT部分のゲート電極104を形成し、ボ
ロン(B)をドーピングし、p型TFTの多結晶シリコ
ン膜に導電領域であるソース領域105、ドレイン領域
106を形成する。Subsequently, a SiOx film is formed by CVD over the entire surface covering the polycrystalline silicon film.
Form 3 On the gate insulating film 103, MoW is deposited as a gate metal film, a gate electrode 104 in a p-type TFT portion is formed using photolithography technology, boron (B) is doped, and a polycrystalline silicon film of the p-type TFT is formed. Next, a source region 105 and a drain region 106 which are conductive regions are formed.
【0035】次に、ゲート金属膜をパターニングし、ゲ
ート配線107およびn型TFTのゲート電極108、
映像信号線109の一部109a、映像信号電圧保持用
コンデンサ110の下部電極パターン110aを形成す
る。Next, the gate metal film is patterned to form the gate wiring 107 and the gate electrode 108 of the n-type TFT.
A part 109a of the video signal line 109 and a lower electrode pattern 110a of the video signal voltage holding capacitor 110 are formed.
【0036】その後、ゲート電極108またはゲート電
極形成時のレジストをマスクとして上部より燐イオン
(P)をドーピングし、n型TFT部分の多結晶シリコ
ン膜にソース領域111、ドレイン領域112を形成す
る。Thereafter, phosphorus ions (P) are doped from above using the gate electrode 108 or the resist at the time of forming the gate electrode as a mask to form a source region 111 and a drain region 112 in the polycrystalline silicon film in the n-type TFT portion.
【0037】さらにCVD法などによりこれらの上面全
部を覆うように、層間絶縁層113となるSiOxを成
膜し、層間絶縁層113およびゲート絶縁膜103を貫
通しソース領域105,111、ドレイン領域106,
112等に達するコンタクトホールを設けた後、Mo/
Al/Moからなる金属膜を成膜・パターニング処理
し、ソース電極113、ドレイン電極114、有機EL
電流供給線115および映像信号線109(109
b)、を形成する。こうして、スイッチング素子SW1
となるn型TFTと駆動用制御素子SW2となるp型T
FT、これらを組合せてなる駆動回路領域の映像信号線
駆動回路Xdr、走査信号線駆動回路Ydrが形成され
る。また、有機EL電流供給線115を上側電極として
映像信号電圧保持用コンデンサ110も形成される。Further, an SiOx film serving as an interlayer insulating layer 113 is formed so as to cover all of these upper surfaces by a CVD method or the like, and penetrates through the interlayer insulating layer 113 and the gate insulating film 103 to form source regions 105 and 111 and a drain region 106. ,
After providing a contact hole reaching 112 or the like, Mo /
A metal film made of Al / Mo is formed and patterned to form a source electrode 113, a drain electrode 114, and an organic EL.
The current supply line 115 and the video signal line 109 (109
b) is formed. Thus, the switching element SW1
N-type TFT and p-type T as drive control element SW2
An FT, a video signal line driving circuit Xdr and a scanning signal line driving circuit Ydr in a driving circuit area formed by combining these are formed. In addition, a capacitor 110 for holding a video signal voltage is formed using the organic EL current supply line 115 as an upper electrode.
【0038】さらに基板全面にSiNxの絶縁層116
を形成し、駆動制御素子SW2のソース電極113と接
続するコンタクトホールを設けた後、Al/Mo/IT
Oからなる金属膜を成膜・パターニング処理し、表示素
子を構成する光反射性の第1電極117、補助配線11
8、表示領域を囲む矩形枠状に補助配線118と一体的
に形成される第2電極電源線119を形成する。Further, an insulating layer 116 of SiNx is formed on the entire surface of the substrate.
Is formed, and a contact hole connected to the source electrode 113 of the drive control element SW2 is provided, and then Al / Mo / IT
A metal film made of O is formed and patterned to form a light-reflecting first electrode 117 and an auxiliary wiring 11 which constitute a display element.
8. A second electrode power supply line 119 formed integrally with the auxiliary wiring 118 is formed in a rectangular frame shape surrounding the display area.
【0039】このように、補助配線118と第1電極1
17とを同一材料を用いて同一工程で形成するため、補
助配線118を形成するための工程を特別に設けること
なく補助配線118を作成することが可能となる。As described above, the auxiliary wiring 118 and the first electrode 1
17 is formed using the same material in the same step, so that the auxiliary wiring 118 can be formed without specially providing a step for forming the auxiliary wiring 118.
【0040】また、表示素子の第1電極117は絶縁層
116上に配置され、絶縁層116を介して駆動制御素
子SW2のソース電極113と接続するので、第1電極
117と駆動制御素子SW2、スイッチング素子SW1
等と重ねて形成することが可能となり、第1電極の面積
を増大させることができる。The first electrode 117 of the display element is disposed on the insulating layer 116 and is connected to the source electrode 113 of the drive control element SW2 via the insulating layer 116, so that the first electrode 117 and the drive control element SW2, Switching element SW1
And so on, and the area of the first electrode can be increased.
【0041】次に、基板全面に黒色有機レジスト材料を
乾燥後の膜厚として3μmに塗布した後、パターニング
し、表示素子の第1電極117に対応する位置に第1電
極117を露出する開口部120bを有し、さらに補助
配線118上に補助配線118を露出するコンタクト部
120aを備えた素子分離用の隔壁120を形成する。
隔壁120としては、隣接素子間のEL光の混色を防止
するために光遮蔽性を有する黒色材料であることが望ま
しく、またその膜厚としては素子分離を行うために有機
発光層と同等以上であることが望ましく、第2電極が補
助配線とのコンタクト部で段切れをおこさないよう形
状、高さを設定することが望ましい。例えば、本実施例
の如く有機発光層が高分子材料の場合には後述のように
インクジェット法で有機発光層を形成するため、インク
液滴を隔壁120に分離するために、隔壁の厚さは1μ
m以上あることが望ましい。また、有機発光層が低分子
材料である場合には、発光層膜厚以上であること、具体
的には100nm以上であれば良い。また、隔壁120の形
状は第2電極が補助配線とのコンタクト部で段切れをお
こさないよう、そのテーパ角が80°以下であることが
望ましい。Next, a black organic resist material is applied to the entire surface of the substrate to a dry thickness of 3 μm, and then patterned, and an opening for exposing the first electrode 117 at a position corresponding to the first electrode 117 of the display element. A partition 120 for element isolation is formed which has a contact portion 120a which has a contact portion 120b and which exposes the auxiliary wiring 118 on the auxiliary wiring 118.
The partition 120 is preferably a black material having a light shielding property to prevent color mixing of EL light between adjacent elements, and has a film thickness equal to or more than that of an organic light emitting layer for element isolation. Desirably, the shape and height are desirably set so that the second electrode does not break at the contact portion with the auxiliary wiring. For example, when the organic light emitting layer is made of a polymer material as in this embodiment, the organic light emitting layer is formed by an ink-jet method as described later. 1μ
m or more is desirable. When the organic light-emitting layer is a low molecular material, the thickness of the light-emitting layer should be equal to or more than the thickness of the light-emitting layer, specifically, 100 nm or more. In addition, the shape of the partition wall 120 preferably has a taper angle of 80 ° or less so that the second electrode does not break at the contact portion with the auxiliary wiring.
【0042】本実施例においては、補助配線のコンタク
ト部120aを、補助配線に沿って連続したパターンで
形成したが、補助配線上に不連続にドット状に設けたパ
ターンで形成してもよい。In this embodiment, the contact portion 120a of the auxiliary wiring is formed in a continuous pattern along the auxiliary wiring. However, the contact portion 120a may be formed in a discontinuous dot pattern on the auxiliary wiring.
【0043】さらに、インクジェット法によりR,G,
Bに対応する高分子系の有機発光材料を順次吐出し、第
1電極上の隔壁120の開口120bに対応する位置に
有機発光層121を選択的に形成する。尚、有機発光層
は、各色共通に形成されるホール輸送層、エレクトロン
輸送層、及び各色毎に形成される発光層の3層積層で構
成されてもよく、機能的に複合された2層または単層で
構成されてもよい。Further, R, G,
The polymer organic light emitting material corresponding to B is sequentially discharged, and the organic light emitting layer 121 is selectively formed at a position corresponding to the opening 120b of the partition wall 120 on the first electrode. The organic light-emitting layer may be composed of a three-layer stack of a hole transport layer, an electron transport layer, and a light-emitting layer formed for each color, which are formed in common for each color. It may be composed of a single layer.
【0044】次に、有機発光層121上の基板全面に第
2電極122として光透過性導電膜、ここではBaを膜
厚10nmとなるよう成膜する。この第2電極は、絶縁
層116上に第1電極117と同層に形成される補助配
線118とコンタクト部120aを介して接続される。Next, a light-transmitting conductive film, here, Ba, is formed as a second electrode 122 on the entire surface of the substrate on the organic light-emitting layer 121 so as to have a thickness of 10 nm. The second electrode is connected to an auxiliary wiring 118 formed on the insulating layer 116 and in the same layer as the first electrode 117 via a contact portion 120a.
【0045】この後、ガラス等の透明絶縁基板を封止基
板として支持基板と対向配置させ、基板周囲を密閉封止
し有機EL表示装置を完成する。Thereafter, a transparent insulating substrate made of glass or the like is disposed as a sealing substrate so as to face the supporting substrate, and the periphery of the substrate is hermetically sealed to complete the organic EL display device.
【0046】また、上述の実施例では、有機発光層に高
分子系の有機発光材料を用いる場合について説明した
が、これに限定されず例えばAlq3等の低分子系の有
機発光材料を用いてもよい。低分子系の有機発光層を形
成する場合には、真空蒸着等により形成することができ
る。In the above-described embodiment, the case where a high molecular weight organic light emitting material is used for the organic light emitting layer has been described. However, the present invention is not limited to this. For example, a low molecular weight organic light emitting material such as Alq 3 may be used. Is also good. When a low molecular weight organic light emitting layer is formed, it can be formed by vacuum evaporation or the like.
【0047】このように、第2電極と接続する補助配線
を備えることにより、表示面内での光取出し側電極全体
の抵抗を下げることができる。As described above, by providing the auxiliary wiring connected to the second electrode, the resistance of the entire light extraction side electrode in the display surface can be reduced.
【0048】また、上面発光方式を採用することによ
り、下面発光方式と比し、高開口率の有機EL表示装置
を実現することが可能となり、正面輝度を向上させるこ
とができる。また、所定の正面輝度を達成するための電
力消費を下面発光方式と比し減少させることができ、有
機EL素子の寿命をより長くすることが可能となる。Also, by employing the top emission method, it is possible to realize an organic EL display device having a higher aperture ratio than that of the bottom emission method, and it is possible to improve the front luminance. Further, power consumption for achieving a predetermined front luminance can be reduced as compared with the bottom emission method, and the life of the organic EL element can be prolonged.
【0049】また特に、絶縁層を介して支持基板に形成
された回路上に表示素子を重ねて配置するため、開口率
を更に向上させることができる。In particular, since the display element is arranged on a circuit formed on the support substrate via the insulating layer, the aperture ratio can be further improved.
【0050】また、補助配線を形成するにあたって、第
1電極と同一材料で同一工程で作成するため、補助配線
を形成するための工程を新たに設けることなく工程増大
を防止することができる。Since the auxiliary wiring is formed in the same step with the same material as the first electrode, it is possible to prevent an increase in the number of steps without newly providing a step for forming the auxiliary wiring.
【0051】また、上述の実施例においては、一例とし
て有機EL表示装置を用いて説明したが、これに限定さ
れず、光変調層が島状に画素毎に独立に形成される平面
表示装置全般に適用できる。In the above embodiment, an organic EL display device has been described as an example. However, the present invention is not limited to this, and a general flat display device in which a light modulation layer is formed in an island shape independently for each pixel. Applicable to
【0052】[0052]
【発明の効果】本発明によれば、表示ムラの発生を抑制
し、表示品位の高い平面表示装置を実現することができ
る。また、製造工程を増大させることなく上記平面表示
装置を達成することができる。According to the present invention, the occurrence of display unevenness can be suppressed, and a flat display device with high display quality can be realized. Further, the flat display device can be achieved without increasing the number of manufacturing steps.
【図1】図1は、本発明の一実施形態を示す有機EL表
示装置の一概略平面図である。FIG. 1 is a schematic plan view of an organic EL display device according to an embodiment of the present invention.
【図2】図2は、本発明の一実施形態を示す有機EL表
示装置の表示領域を示す一部概略平面図である。FIG. 2 is a partial schematic plan view showing a display area of an organic EL display device according to an embodiment of the present invention.
【図3】図3は、本発明の一実施形態を示す有機EL表
示装置の表示領域を示す一部概略断面図である。FIG. 3 is a partial schematic cross-sectional view showing a display area of an organic EL display device according to an embodiment of the present invention.
【図4】図4は、本発明の一実施形態を示す補助配線、
第2電極電源線を示す平面図である。FIG. 4 is an auxiliary wiring showing one embodiment of the present invention;
FIG. 5 is a plan view showing a second electrode power supply line.
【図5】図5は、本発明の一実施形態を示す第1電極、
補助配線を示す平面図である。FIG. 5 is a first electrode showing one embodiment of the present invention;
FIG. 4 is a plan view showing auxiliary wiring.
117…第1電極 118…補助配線 120…隔壁 121…光変調層 122…第2電極 117 first electrode 118 auxiliary wiring 120 partition 121 light modulating layer 122 second electrode
Claims (9)
前記走査信号線に略直交して配置される複数の映像信号
線と、これら交点付近に配置されるスイッチング素子
と、前記スイッチング素子に接続され、第1電極および
第2電極間に独立島状に形成される光変調層を備えた表
示素子がマトリクス状に配置されるアクティブマトリク
ス型平面表示装置において、前記第1電極と同層に形成
され、かつ前記第1電極とは電気的に絶縁され、前記第
2電極と電気的に接続された補助配線とを備えたことを
特徴とするアクティブマトリクス型平面表示装置。A plurality of scanning signal lines disposed on a substrate;
A plurality of video signal lines arranged substantially orthogonal to the scanning signal lines; a switching element arranged near the intersection thereof; and a switching element connected to the switching element, and an independent island between the first electrode and the second electrode. In an active matrix type flat display device in which display elements having a light modulation layer to be formed are arranged in a matrix, the display elements are formed in the same layer as the first electrode, and are electrically insulated from the first electrode; An active matrix type flat display device, comprising: an auxiliary wiring electrically connected to the second electrode.
形成されることを特徴とする請求項1記載のアクティブ
マトリクス型平面表示装置。2. The active matrix type flat display device according to claim 1, wherein said first electrode and said auxiliary wiring are formed of the same material.
が小さいことを特徴とする請求項1記載のアクティブマ
トリクス型平面表示装置。3. The active matrix type flat display device according to claim 1, wherein the auxiliary wiring has a lower resistance than the second electrode.
れることを特徴とする請求項1記載のアクティブマトリ
クス型平面表示装置。4. The active matrix type flat display device according to claim 1, wherein said light modulation layer is formed of an organic light emitting material.
成されることを特徴とする請求項1記載のアクティブマ
トリクス型平面表示装置。5. The active matrix type flat display device according to claim 1, wherein said second electrode is formed of a light transmitting conductive material.
ことを特徴とする請求項5記載のアクティブマトリクス
型平面表示装置。6. The active matrix type flat display device according to claim 5, wherein light is extracted to the outside through said second electrode.
極間に光変調層を備えた表示素子をマトリクス配置して
なるアクティブマトリクス型平面表示装置の製造方法で
あって、導電材料から同一工程で前記第1電極および補
助配線を形成する工程と、前記第1電極および配線を露
出する領域を備えた絶縁膜を形成する工程と、前記第1
電極の前記露出する領域に対応する位置に前記光変調層
を形成する工程と、前記基板の略全面に光透過性導電膜
を配置し、前記第1電極に光変調層を介して対向すると
共に、前記補助配線に電気的に接続される前記第2電極
を形成する工程と、を備えたアクティブマトリクス型平
面表示装置の製造方法。7. A method of manufacturing an active matrix type flat display device comprising a matrix of display elements provided with a light modulation layer between a first electrode and a second electrode formed on a substrate, the method comprising the steps of: Forming the first electrode and the auxiliary wiring in the same step; forming an insulating film having a region exposing the first electrode and the wiring;
Forming the light modulating layer at a position corresponding to the exposed region of the electrode, disposing a light transmitting conductive film over substantially the entire surface of the substrate, and opposing the first electrode via the light modulating layer. Forming the second electrode electrically connected to the auxiliary wiring.
されることを特徴とする請求項7記載のアクティブマト
リクス型平面表示装置の製造方法。8. The method according to claim 7, wherein said insulating film is made of an organic resist material.
材料を選択的に吐出する工程を含むことを特徴とする請
求項7記載のアクティブマトリクス型平面表示装置の製
造方法。9. The method according to claim 7, wherein the step of forming the light modulation layer includes a step of selectively discharging an organic light emitting material.
Priority Applications (4)
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JP2001122485A JP2002318556A (en) | 2001-04-20 | 2001-04-20 | Active matrix type planar display device and manufacturing method therefor |
US10/125,612 US6900470B2 (en) | 2001-04-20 | 2002-04-19 | Display device and method of manufacturing the same |
TW091108121A TWI257496B (en) | 2001-04-20 | 2002-04-19 | Display device and method of manufacturing the same |
KR10-2002-0021754A KR100474029B1 (en) | 2001-04-20 | 2002-04-20 | Display device and method of manufacturing the same |
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---|---|---|---|---|
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US8999832B2 (en) | 2010-08-06 | 2015-04-07 | Panasonic Corporation | Organic EL element |
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US9006760B2 (en) | 2011-12-21 | 2015-04-14 | Panasonic Corporation | Display panel and display device |
US9012896B2 (en) | 2010-08-06 | 2015-04-21 | Panasonic Corporation | Organic EL element |
US9012897B2 (en) | 2010-08-06 | 2015-04-21 | Panasonic Corporation | Organic EL element, display device, and light-emitting device |
US9029842B2 (en) | 2010-08-06 | 2015-05-12 | Joled Inc. | Organic electroluminescence element and method of manufacturing thereof |
US9029843B2 (en) | 2010-08-06 | 2015-05-12 | Joled Inc. | Organic electroluminescence element |
US9048448B2 (en) | 2010-08-06 | 2015-06-02 | Joled Inc. | Organic electroluminescence element and method of manufacturing thereof |
US9059426B2 (en) | 2010-04-06 | 2015-06-16 | Samsung Display Co., Ltd. | Organic light emitting device and method of manufacturing the same |
US9111891B2 (en) | 2012-02-06 | 2015-08-18 | Joled Inc. | EL display apparatus and manufacturing method thereof |
JP2015159114A (en) * | 2005-08-31 | 2015-09-03 | 株式会社半導体エネルギー研究所 | semiconductor device |
US9130187B2 (en) | 2010-08-06 | 2015-09-08 | Joled Inc. | Organic EL element, display device, and light-emitting device |
US9178174B2 (en) | 2012-03-27 | 2015-11-03 | Sony Corporation | Display device and method of manufacturing the same, method of repairing display device, and electronic apparatus |
US9209227B2 (en) | 2011-11-07 | 2015-12-08 | Joled Inc. | Organic electroluminescence display panel and organic electroluminescence display apparatus |
JP2015222728A (en) * | 2013-09-02 | 2015-12-10 | 大日本印刷株式会社 | Top-emission organic electroluminescent display device and manufacturing method therefor |
WO2016017072A1 (en) * | 2014-07-30 | 2016-02-04 | パナソニックIpマネジメント株式会社 | Organic el element and organic el element manufacturing method |
US9273397B2 (en) | 2014-03-11 | 2016-03-01 | Panasonic Corporation | Method for inspecting liquid droplet ejection apparatus |
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US9449379B2 (en) | 2012-06-20 | 2016-09-20 | Panasonic Intellectual Property Management Co., Ltd. | Method for inspecting solution discharge apparatus and method for producing device |
US9478598B2 (en) | 2011-11-07 | 2016-10-25 | Joled Inc. | Organic electroluminescence display panel and organic electroluminescence display apparatus |
US9490445B2 (en) | 2010-07-30 | 2016-11-08 | Joled Inc. | Organic el element, organic el panel, organic el light-emitting apparatus, organic el display apparatus, and method of manufacturing organic el element |
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US9843010B2 (en) | 2010-08-06 | 2017-12-12 | Joled Inc. | Light-emitting element, light-emitting device provided with light-emitting element, and light-emitting element production method |
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US9917277B2 (en) | 2014-04-04 | 2018-03-13 | Joled Inc. | Display panel and production method therefor |
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US9954194B2 (en) | 2015-02-05 | 2018-04-24 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
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US10049622B2 (en) | 2014-09-29 | 2018-08-14 | Joled Inc. | Display device and method for driving display device |
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JP2018181460A (en) * | 2017-04-05 | 2018-11-15 | 株式会社Joled | Organic el display panel and manufacturing method of organic el display panel |
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US10297656B2 (en) | 2015-11-23 | 2019-05-21 | Samsung Display Co., Ltd. | Organic light-emitting diode display and method of manufacturing the same |
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US10468623B2 (en) | 2017-02-16 | 2019-11-05 | Joled Inc. | Organic EL display panel and method of manufacturing organic EL display panel |
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JP2023541726A (en) * | 2021-08-18 | 2023-10-04 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | display panel |
-
2001
- 2001-04-20 JP JP2001122485A patent/JP2002318556A/en active Pending
Cited By (321)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7265391B2 (en) | 2002-01-24 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
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JP2003303687A (en) * | 2002-02-06 | 2003-10-24 | Hitachi Ltd | Organic luminous display device |
US8253320B2 (en) | 2002-04-18 | 2012-08-28 | Seiko Epson Corporation | Method of manufacturing an electric optical device in which external connection terminals are formed |
US8339030B2 (en) | 2002-04-18 | 2012-12-25 | Seiko Epson Corporation | Method of manufacturing an electric optical device in which external connection terminals are formed |
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JP2004004797A (en) * | 2002-04-24 | 2004-01-08 | Sanyo Electric Co Ltd | Display device |
US7759859B2 (en) | 2002-04-30 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP2004031335A (en) * | 2002-04-30 | 2004-01-29 | Semiconductor Energy Lab Co Ltd | Light-emitting device and method of fabricating the same |
US7364928B2 (en) | 2002-05-29 | 2008-04-29 | Seiko Epson Corporation | Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus |
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US7507609B2 (en) | 2002-09-19 | 2009-03-24 | Samsung Mobile Display Co., Ltd. | Organic electroluminescent display and method of manufacturing the same |
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US7198515B2 (en) | 2002-09-25 | 2007-04-03 | Seiko Epson Corporation | Electro-optical apparatus, matrix substrate, and electronic unit |
JP2006113597A (en) * | 2002-09-25 | 2006-04-27 | Seiko Epson Corp | Light emitting apparatus |
USRE42623E1 (en) | 2002-09-25 | 2011-08-16 | Seiko Epson Corporation | Electro-optical apparatus, matrix substrate, and electronic unit |
JP2006072390A (en) * | 2002-09-25 | 2006-03-16 | Seiko Epson Corp | Light emitting apparatus |
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US8609181B2 (en) | 2003-06-16 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
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US9261722B2 (en) | 2003-06-16 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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JP2005038833A (en) * | 2003-06-16 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method thereof |
US9997542B2 (en) | 2003-06-16 | 2018-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP2005031645A (en) * | 2003-06-16 | 2005-02-03 | Semiconductor Energy Lab Co Ltd | Display device and its manufacturing method |
JP2005031651A (en) * | 2003-06-17 | 2005-02-03 | Semiconductor Energy Lab Co Ltd | Display device and electronic apparatus |
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US9887241B2 (en) | 2003-06-17 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
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US7411344B2 (en) | 2003-06-17 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
US7880380B2 (en) | 2003-06-17 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
JP4593179B2 (en) * | 2003-06-17 | 2010-12-08 | 株式会社半導体エネルギー研究所 | Display device |
KR100698349B1 (en) * | 2003-06-26 | 2007-03-23 | 가시오게산키 가부시키가이샤 | Display apparatus |
JP2005038651A (en) * | 2003-07-16 | 2005-02-10 | Seiko Epson Corp | Electro-optical device, manufacturing method of the same, and electronic apparatus |
US7804242B2 (en) | 2003-08-05 | 2010-09-28 | Lg Display Co., Ltd. | Top-emission active matrix electroluminescence device and method for fabricating the same |
JP4684592B2 (en) * | 2003-08-05 | 2011-05-18 | エルジー ディスプレイ カンパニー リミテッド | Method for manufacturing organic electroluminescent device |
EP1505666A3 (en) * | 2003-08-05 | 2005-03-30 | Lg Electronics Inc. | Top-emission active matrix electroluminescence device and method for fabricating the same |
JP2005056846A (en) * | 2003-08-05 | 2005-03-03 | Lg Electron Inc | Organic electroluminescence device and its manufacturing method |
EP1505666A2 (en) * | 2003-08-05 | 2005-02-09 | Lg Electronics Inc. | Top-emission active matrix electroluminescence device and method for fabricating the same |
JP2005063787A (en) * | 2003-08-11 | 2005-03-10 | Hitachi Displays Ltd | Organic el display device |
JP2005071656A (en) * | 2003-08-28 | 2005-03-17 | Chi Mei Electronics Corp | Organic el display with luminance unevenness eliminated and its manufacturing method |
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JP2005093398A (en) * | 2003-09-19 | 2005-04-07 | Sony Corp | Organic light emitting element, its manufacturing method, and display device |
US7597602B2 (en) | 2003-09-19 | 2009-10-06 | Sony Corporation | Organic light emitting device, manufacturing method thereof, and display unit |
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US7686666B2 (en) | 2003-10-09 | 2010-03-30 | Samsung Mobile Display Co., Ltd. | Flat panel display device capable of reducing or preventing a voltage drop and method of fabricating the same |
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JP2005135624A (en) * | 2003-10-28 | 2005-05-26 | Sharp Corp | Organic el element |
JP2005149800A (en) * | 2003-11-12 | 2005-06-09 | Sony Corp | Display device and manufacturing method of the same |
JP2005158493A (en) * | 2003-11-26 | 2005-06-16 | Seiko Epson Corp | Organic electroluminescence device and electronic equipment |
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JP2005189304A (en) * | 2003-12-24 | 2005-07-14 | Seiko Epson Corp | Electrooptical device, method for manufacturing electrooptical device, and electronic apparatus |
JP2005189676A (en) * | 2003-12-26 | 2005-07-14 | Sony Corp | Display device |
JP2005189671A (en) * | 2003-12-26 | 2005-07-14 | Sony Corp | Display device |
JP4599840B2 (en) * | 2003-12-26 | 2010-12-15 | ソニー株式会社 | Display device |
JP2005202285A (en) * | 2004-01-19 | 2005-07-28 | Seiko Epson Corp | Organic electroluminescence device, method for manufacturing organic electroluminescence device, and electronic apparatus |
JP4507611B2 (en) * | 2004-01-29 | 2010-07-21 | セイコーエプソン株式会社 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ELECTRONIC DEVICE |
JP2005215354A (en) * | 2004-01-29 | 2005-08-11 | Seiko Epson Corp | Organic electroluminescence device and electronic equipment |
US7456811B2 (en) | 2004-02-14 | 2008-11-25 | Samsung Sdi Co., Ltd. | Organic electro-luminescent display device and method of manufacturing the same |
US8164545B2 (en) | 2004-02-14 | 2012-04-24 | Samsung Mobile Display Co., Ltd. | Organic electro-luminescent display device and method of manufacturing the same |
EP1587154A2 (en) | 2004-02-14 | 2005-10-19 | Samsung SDI Co., Ltd. | Organic electro-luminescent display device and method of manufacturing the same |
EP1587154A3 (en) * | 2004-02-14 | 2008-05-28 | Samsung SDI Co., Ltd. | Organic electro-luminescent display device and method of manufacturing the same |
JP2005227788A (en) * | 2004-02-14 | 2005-08-25 | Samsung Sdi Co Ltd | Organic electroluminescence display device and method of manufacturing the same |
JP2005235491A (en) * | 2004-02-18 | 2005-09-02 | Tdk Corp | Image display device |
JP4664604B2 (en) * | 2004-02-18 | 2011-04-06 | Tdk株式会社 | Image display device |
KR101161443B1 (en) * | 2004-03-22 | 2012-07-02 | 소니 주식회사 | Display device and production method for the same |
JP2005266667A (en) * | 2004-03-22 | 2005-09-29 | Sony Corp | Display device manufacturing method and display device |
US8120246B2 (en) | 2004-03-22 | 2012-02-21 | Sony Corporation | Display device with improved moisture prevention and production method for the same |
JP4608921B2 (en) * | 2004-03-22 | 2011-01-12 | ソニー株式会社 | Display device manufacturing method and display device |
JP2005283922A (en) * | 2004-03-29 | 2005-10-13 | Tdk Corp | Image display device |
CN100454605C (en) * | 2004-04-21 | 2009-01-21 | 精工爱普生株式会社 | Organic electroluminescent device, method of manufacture thereof and electronic apparatus |
JP2005327674A (en) * | 2004-05-17 | 2005-11-24 | Sharp Corp | Organic electroluminescent display element, display device having the same, and manufacturing method thereof |
US7612495B2 (en) | 2004-05-17 | 2009-11-03 | Sony Corporation | Display device |
JP2005326704A (en) * | 2004-05-17 | 2005-11-24 | Sony Corp | Display device |
JP2005331919A (en) * | 2004-05-20 | 2005-12-02 | Samsung Sdi Co Ltd | Flat display device and electroluminescence display device |
JP2006059796A (en) * | 2004-07-22 | 2006-03-02 | Sharp Corp | Organic light-emitting element, display device equipped with the same, and manufacturing method of organic lightemitting element |
US8098009B2 (en) | 2004-08-17 | 2012-01-17 | Seiko Epson Corporation | Electro-optical device and electronic apparatus for a liquid crystal panel |
JP2006058815A (en) * | 2004-08-24 | 2006-03-02 | Sony Corp | Display apparatus |
JP4725054B2 (en) * | 2004-08-24 | 2011-07-13 | ソニー株式会社 | Display device |
JP2016066104A (en) * | 2004-09-16 | 2016-04-28 | 株式会社半導体エネルギー研究所 | Display device and electronic apparatus |
JP2015148802A (en) * | 2004-09-16 | 2015-08-20 | 株式会社半導体エネルギー研究所 | Display device, and electronic apparatus |
US9577008B2 (en) | 2004-09-16 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of the same |
JP2014013404A (en) * | 2004-09-16 | 2014-01-23 | Semiconductor Energy Lab Co Ltd | Display device and electronic apparatus |
JP4517804B2 (en) * | 2004-09-29 | 2010-08-04 | カシオ計算機株式会社 | Display panel |
JP2006098619A (en) * | 2004-09-29 | 2006-04-13 | Casio Comput Co Ltd | Display panel |
US7576358B2 (en) | 2004-09-29 | 2009-08-18 | Casio Computer Co., Ltd. | Display panel |
JP2006171745A (en) * | 2004-12-14 | 2006-06-29 | Samsung Sdi Co Ltd | Organic electroluminescent element and method of fabricating the same |
US7817119B2 (en) | 2004-12-15 | 2010-10-19 | Toshiba Matsushita Display Technology Co., Ltd. | Display device and method of manufacturing the display device |
WO2006064715A1 (en) | 2004-12-15 | 2006-06-22 | Toshiba Matsushita Display Technology Co., Ltd. | Display device and display device manufacturing method |
JP2006171329A (en) * | 2004-12-15 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | Display device and method of manufacturing display device |
JP2008524648A (en) * | 2004-12-16 | 2008-07-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Display panel and method of manufacturing the same |
US7750557B2 (en) | 2005-03-29 | 2010-07-06 | Fujifilm Corporation | Organic electroluminescent display device |
JP2006286493A (en) * | 2005-04-04 | 2006-10-19 | Sony Corp | Display element, display device, and manufacturing method of display element |
JP4677817B2 (en) * | 2005-04-11 | 2011-04-27 | セイコーエプソン株式会社 | ORGANIC EL DEVICE, METHOD FOR MANUFACTURING ORGANIC EL DEVICE, AND ELECTRONIC DEVICE USING THE SAME |
JP2006294395A (en) * | 2005-04-11 | 2006-10-26 | Seiko Epson Corp | Organic el device, manufacturing method of organic el device, and electronic equipment using the same |
EP1724854A1 (en) * | 2005-05-17 | 2006-11-22 | LG Electronics Inc. | Organic electroluminescent device and method for manufacturing the same |
US7586124B2 (en) | 2005-05-17 | 2009-09-08 | Lg Display Co., Ltd. | Organic electroluminescent device and method for manufacturing the same |
US8093805B2 (en) | 2005-05-27 | 2012-01-10 | Fujifilm Corporation | Vapor deposition mask, organic electroluminescent display device, and manufacturing method therefor |
JP2006349753A (en) * | 2005-06-13 | 2006-12-28 | Seiko Epson Corp | Light emitting device and manufacturing method for the same |
KR101315086B1 (en) * | 2005-06-30 | 2013-10-08 | 코닌클리케 필립스 엔.브이. | Organic electronic device and method for manufacture thereof |
JP2008545231A (en) * | 2005-06-30 | 2008-12-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Organic device and method of manufacturing the same |
JP2015159114A (en) * | 2005-08-31 | 2015-09-03 | 株式会社半導体エネルギー研究所 | semiconductor device |
JP2016027572A (en) * | 2005-08-31 | 2016-02-18 | 株式会社半導体エネルギー研究所 | Semiconductor device and electronic apparatus |
JP2016054298A (en) * | 2005-08-31 | 2016-04-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2016201372A (en) * | 2005-08-31 | 2016-12-01 | 株式会社半導体エネルギー研究所 | Semiconductor device |
KR100739143B1 (en) * | 2005-09-20 | 2007-07-13 | 엘지전자 주식회사 | Front emitting oled device and manufacturing method thereof |
KR100739144B1 (en) * | 2005-09-28 | 2007-07-13 | 엘지전자 주식회사 | Front emitting oled device and manufacturing method thereof |
JP2007108469A (en) * | 2005-10-14 | 2007-04-26 | Seiko Epson Corp | Method of manufacturing organic el device, organic el device, and electronic apparatus |
US8487313B2 (en) | 2005-11-14 | 2013-07-16 | Seiko Epson Corporation | Emissive device and electronic apparatus |
JP2007156388A (en) * | 2005-11-14 | 2007-06-21 | Seiko Epson Corp | Emissive device and electronic apparatus |
JP4513777B2 (en) * | 2005-11-14 | 2010-07-28 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
JP4702483B2 (en) * | 2005-11-14 | 2011-06-15 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
US7719011B2 (en) | 2005-11-14 | 2010-05-18 | Seiko Epson Corporation | Emissive device and electronic apparatus |
JP2010164983A (en) * | 2005-11-14 | 2010-07-29 | Seiko Epson Corp | Emissive device and electronic apparatus |
JP2007156387A (en) * | 2005-11-14 | 2007-06-21 | Seiko Epson Corp | Emissive device and electronic apparatus |
JP2014139696A (en) * | 2005-11-30 | 2014-07-31 | Semiconductor Energy Lab Co Ltd | Display device |
JP2007157374A (en) * | 2005-12-01 | 2007-06-21 | Seiko Epson Corp | Light-emitting device and electronic equipment |
JP4736757B2 (en) * | 2005-12-01 | 2011-07-27 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
JP2007156058A (en) * | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | Light emitting device and electronic apparatus |
JP2013152491A (en) * | 2006-01-24 | 2013-08-08 | Seiko Epson Corp | Light emitting device and electronic equipment |
JP2007226184A (en) * | 2006-01-24 | 2007-09-06 | Seiko Epson Corp | Light emitting device and electronic device |
JP2007287354A (en) * | 2006-04-12 | 2007-11-01 | Hitachi Displays Ltd | Organic el display device |
JP2012230928A (en) * | 2006-06-19 | 2012-11-22 | Sony Corp | Light emitting display device and manufacturing method of the same |
US8747177B2 (en) | 2006-06-19 | 2014-06-10 | Sony Corporation | Light-emitting display and method of manufacturing the same |
US8598777B2 (en) | 2006-06-19 | 2013-12-03 | Sony Corporation | Light-emitting display and method of manufacturing the same |
US8115376B2 (en) | 2006-06-19 | 2012-02-14 | Sony Corporation | Light-emitting display with auxiliary wiring section and method of manufacturing the same |
JP2008034362A (en) * | 2006-06-28 | 2008-02-14 | Sumitomo Chemical Co Ltd | Organic electroluminescent element |
WO2008001756A1 (en) * | 2006-06-28 | 2008-01-03 | Sumitomo Chemical Company, Limited | Organic electroluminescence element |
KR20080014328A (en) * | 2006-08-10 | 2008-02-14 | 삼성에스디아이 주식회사 | Organic light emitting display apparatus and method of manufacturing the same |
JP2008084837A (en) * | 2006-08-30 | 2008-04-10 | Sumitomo Chemical Co Ltd | Organic electroluminescence element |
WO2008026649A1 (en) * | 2006-08-30 | 2008-03-06 | Sumitomo Chemical Company, Limited | Organic electroluminescence element |
JP2012084535A (en) * | 2006-08-30 | 2012-04-26 | Sumitomo Chemical Co Ltd | Organic electroluminescent element |
US8324801B2 (en) | 2006-08-30 | 2012-12-04 | Sumitomo Chemical Company, Limited | Organic electroluminescence element |
JP2008078038A (en) * | 2006-09-22 | 2008-04-03 | Fuji Electric Holdings Co Ltd | Organic el display panel and its manufacturing method |
US8455893B2 (en) | 2006-11-17 | 2013-06-04 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
JP2008146026A (en) * | 2006-11-17 | 2008-06-26 | Canon Inc | Light-emitting apparatus and production method thereof |
US7985609B2 (en) | 2006-11-17 | 2011-07-26 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
JP2007241300A (en) * | 2007-04-20 | 2007-09-20 | Seiko Epson Corp | Electrooptical device and electronic equipment |
JP2007241302A (en) * | 2007-04-20 | 2007-09-20 | Seiko Epson Corp | Electrooptical device and electronic equipment |
JP4600420B2 (en) * | 2007-04-20 | 2010-12-15 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP2007241301A (en) * | 2007-04-20 | 2007-09-20 | Seiko Epson Corp | Electrooptical device and electronic equipment |
JP4600419B2 (en) * | 2007-04-20 | 2010-12-15 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP4655061B2 (en) * | 2007-04-20 | 2011-03-23 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP2009009821A (en) * | 2007-06-28 | 2009-01-15 | Canon Inc | Organic light-emitting device and its manufacturing method |
JP4720802B2 (en) * | 2007-08-03 | 2011-07-13 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP2007299014A (en) * | 2007-08-03 | 2007-11-15 | Seiko Epson Corp | Electro-optical apparatus and electronic apparatus |
TWI409754B (en) * | 2007-08-15 | 2013-09-21 | Sony Corp | Display device and electronic equipment |
US9189994B2 (en) | 2007-08-15 | 2015-11-17 | Sony Corporation | Display device and electronic equipment |
JP2009047764A (en) * | 2007-08-15 | 2009-03-05 | Sony Corp | Display device and electronic equipment |
US7839073B2 (en) | 2007-10-09 | 2010-11-23 | Canon Kabushiki Kaisha | Light-emitting display apparatus incorporating combined first and second auxiliary electrodes arranged at intervals and method of producing the same |
US7915814B2 (en) | 2007-10-10 | 2011-03-29 | Hitachi Displays, Ltd. | Organic electro-luminescent display device |
US11545087B2 (en) | 2007-10-23 | 2023-01-03 | Sony Corporation | Display device and electronic apparatus |
US10242614B2 (en) | 2007-10-23 | 2019-03-26 | Sony Corporation | Display device and electronic apparatus |
US11056052B2 (en) | 2007-10-23 | 2021-07-06 | Sony Corporation | Display device and electronic apparatus |
US9024847B2 (en) | 2007-10-23 | 2015-05-05 | Sony Corporation | Display device and electronic apparatus |
JP2009122652A (en) * | 2007-10-23 | 2009-06-04 | Sony Corp | Display device and electronic apparatus |
US8013513B2 (en) | 2007-11-19 | 2011-09-06 | Sony Corporation | Active matrix display device |
JP2009128374A (en) * | 2007-11-19 | 2009-06-11 | Sony Corp | Active matrix display device |
US8692455B2 (en) | 2007-12-18 | 2014-04-08 | Sony Corporation | Display device and method for production thereof |
JP2009199868A (en) * | 2008-02-21 | 2009-09-03 | Seiko Epson Corp | Organic electroluminescent device and its manufacturing method |
JP2009259416A (en) * | 2008-04-11 | 2009-11-05 | Sony Corp | Display element, manufacturing method of the same and display device |
JP4655102B2 (en) * | 2008-04-11 | 2011-03-23 | ソニー株式会社 | Display element, manufacturing method thereof, and display device |
JP2009259475A (en) * | 2008-04-14 | 2009-11-05 | Sony Corp | Display element, display device, and manufacturing method of display element |
JP2008218428A (en) * | 2008-04-28 | 2008-09-18 | Hitachi Displays Ltd | Organic el display device |
JP4606480B2 (en) * | 2008-04-28 | 2011-01-05 | 株式会社 日立ディスプレイズ | Organic EL display device |
US9041281B2 (en) | 2008-06-18 | 2015-05-26 | Sony Corporation | Self-light emitting display unit and electronic device |
US10249687B2 (en) | 2008-06-18 | 2019-04-02 | Sony Corporation | Self-light emitting display unit and electronic device |
US9397147B2 (en) | 2008-06-18 | 2016-07-19 | Sony Corporation | Self-light emitting display unit and electronic device |
US8723416B2 (en) | 2008-06-18 | 2014-05-13 | Sony Corporation | Self-light emitting display unit and electronic device |
US8610348B2 (en) | 2008-06-18 | 2013-12-17 | Sony Corporation | Self-light emitting display unit and electronic device |
US10998382B2 (en) | 2008-06-18 | 2021-05-04 | Sony Corporation | Self-light emitting display unit and electronic device |
US9666656B2 (en) | 2008-06-18 | 2017-05-30 | Sony Corporation | Self-light emitting display unit and electronic device |
JP2010002476A (en) * | 2008-06-18 | 2010-01-07 | Sony Corp | Light emission display and electronic apparatus |
US9978815B2 (en) | 2008-06-18 | 2018-05-22 | Sony Corporation | Self-light emitting display unit and electronic device |
US10236325B2 (en) | 2008-06-18 | 2019-03-19 | Sony Corporation | Self-light emitting display unit and electronic device |
JP4614106B2 (en) * | 2008-06-18 | 2011-01-19 | ソニー株式会社 | Self-luminous display device and electronic device |
US8446092B2 (en) | 2008-06-18 | 2013-05-21 | Sony Corporation | Self-light emitting display unit and electronic device |
JP2010062003A (en) * | 2008-09-04 | 2010-03-18 | Hitachi Displays Ltd | Display device |
US8188476B2 (en) | 2008-10-29 | 2012-05-29 | Sony Corporation | Organic EL display and method of manufacturing the same |
JP2010108693A (en) * | 2008-10-29 | 2010-05-13 | Sony Corp | Organic el display and its manufacturing method |
US8518754B2 (en) | 2008-10-29 | 2013-08-27 | Sony Corporation | Organic EL display and method of manufacturing the same |
US8094096B2 (en) | 2008-12-18 | 2012-01-10 | Panasonic Corporation | Organic electroluminescence display device and manufacturing method thereof |
US8289242B2 (en) | 2008-12-18 | 2012-10-16 | Panasonic Corporation | Organic electroluminescence display device and manufacturing method thereof |
US8822246B2 (en) | 2009-02-10 | 2014-09-02 | Panasonic Corporation | Method for manufacturing a light-emitting element including a protective film for a charge injection layer |
US8890174B2 (en) | 2009-02-10 | 2014-11-18 | Panasonic Corporation | Light-emitting element including a charge injection transport layer that includes a dissolvable metal compound, and display device and method for manufacturing thereof |
US8890173B2 (en) | 2009-02-10 | 2014-11-18 | Panasonic Corporation | Light-emitting element including a charge injection transport layer having a recess portion for accumulating ink, and display device and method for manufacturing thereof |
US8866160B2 (en) | 2009-02-10 | 2014-10-21 | Panasonic Corporation | Light-emitting element, device, and manufacturing method including a charge injection layer having a recess for suppressing uneven luminance |
WO2010140301A1 (en) * | 2009-06-04 | 2010-12-09 | パナソニック株式会社 | Organic el display panel and method for manufacturing same |
JP4621818B1 (en) * | 2009-06-04 | 2011-01-26 | パナソニック株式会社 | Organic EL display panel and manufacturing method thereof |
US8872164B2 (en) | 2009-08-19 | 2014-10-28 | Panasonic Corporation | Organic el element |
US8952609B2 (en) | 2009-10-15 | 2015-02-10 | Panasonic Corporation | Display panel apparatus and method of fabricating display panel apparatus |
JP5690280B2 (en) * | 2009-10-15 | 2015-03-25 | パナソニック株式会社 | Display panel device and manufacturing method thereof |
JPWO2011045911A1 (en) * | 2009-10-15 | 2013-03-04 | パナソニック株式会社 | Display panel device and manufacturing method thereof |
US9093659B2 (en) | 2009-10-15 | 2015-07-28 | Joled Inc. | Display panel apparatus and method of fabricating display panel apparatus |
WO2011045911A1 (en) * | 2009-10-15 | 2011-04-21 | パナソニック株式会社 | Display panel device and method for manufacturing same |
JP2010033090A (en) * | 2009-11-16 | 2010-02-12 | Sony Corp | Display device |
JP2011171278A (en) * | 2010-02-19 | 2011-09-01 | Samsung Mobile Display Co Ltd | Organic light-emitting display device |
US9099674B2 (en) | 2010-02-19 | 2015-08-04 | Samsung Display Co., Ltd. | Organic light-emitting display device |
US8889998B2 (en) | 2010-03-09 | 2014-11-18 | Taiyo Yuden Co., Ltd. | Conductor structure, transparent device, and electronic device |
WO2011111650A1 (en) * | 2010-03-09 | 2011-09-15 | 太陽誘電株式会社 | Conductor structure, transparent device, and electronic device |
JP5503729B2 (en) * | 2010-03-09 | 2014-05-28 | 太陽誘電株式会社 | Conductor structure, transparent device and electronic device |
US8455897B2 (en) | 2010-03-11 | 2013-06-04 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
US9059426B2 (en) | 2010-04-06 | 2015-06-16 | Samsung Display Co., Ltd. | Organic light emitting device and method of manufacturing the same |
US8703530B2 (en) | 2010-06-24 | 2014-04-22 | Panasonic Corporation | Method for producing organic EL element, display device, light-emitting apparatus, and ultraviolet irradiation device |
US8664669B2 (en) | 2010-06-24 | 2014-03-04 | Panasonic Corporation | Organic EL element, display apparatus, and light-emitting apparatus |
US8569762B2 (en) | 2010-07-02 | 2013-10-29 | Samsung Display Co., Ltd. | Organic light-emitting display device having improved transmittance |
US9490445B2 (en) | 2010-07-30 | 2016-11-08 | Joled Inc. | Organic el element, organic el panel, organic el light-emitting apparatus, organic el display apparatus, and method of manufacturing organic el element |
US8852977B2 (en) | 2010-08-06 | 2014-10-07 | Panasonic Corporation | Method for producing light-emitting elements |
US9029843B2 (en) | 2010-08-06 | 2015-05-12 | Joled Inc. | Organic electroluminescence element |
US8890129B2 (en) | 2010-08-06 | 2014-11-18 | Panasonic Corporation | Light emitting device, light emitting apparatus provided with a light emitting device, and method of manufacturing a light emitting device |
US9012896B2 (en) | 2010-08-06 | 2015-04-21 | Panasonic Corporation | Organic EL element |
US8563994B2 (en) | 2010-08-06 | 2013-10-22 | Panasonic Corporation | Light-emitting element, display device, and method for producing light-emitting element |
US8946693B2 (en) | 2010-08-06 | 2015-02-03 | Panasonic Corporation | Organic EL element, display device, and light-emitting device |
US9130187B2 (en) | 2010-08-06 | 2015-09-08 | Joled Inc. | Organic EL element, display device, and light-emitting device |
US8927975B2 (en) | 2010-08-06 | 2015-01-06 | Panasonic Corporation | Light emitting element, method for manufacturing same, and light emitting device |
US9843010B2 (en) | 2010-08-06 | 2017-12-12 | Joled Inc. | Light-emitting element, light-emitting device provided with light-emitting element, and light-emitting element production method |
US8999832B2 (en) | 2010-08-06 | 2015-04-07 | Panasonic Corporation | Organic EL element |
US9048448B2 (en) | 2010-08-06 | 2015-06-02 | Joled Inc. | Organic electroluminescence element and method of manufacturing thereof |
US9012897B2 (en) | 2010-08-06 | 2015-04-21 | Panasonic Corporation | Organic EL element, display device, and light-emitting device |
US8921838B2 (en) | 2010-08-06 | 2014-12-30 | Panasonic Corporation | Light emitting element, method for manufacturing same, and light emitting device |
US8927976B2 (en) | 2010-08-06 | 2015-01-06 | Panasonic Corporation | Organic EL element and production method for same |
US9029842B2 (en) | 2010-08-06 | 2015-05-12 | Joled Inc. | Organic electroluminescence element and method of manufacturing thereof |
US8884281B2 (en) | 2011-01-21 | 2014-11-11 | Panasonic Corporation | Organic EL element |
JP2012186151A (en) * | 2011-02-14 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | Light-emitting device and illumination device |
US8829510B2 (en) | 2011-02-23 | 2014-09-09 | Panasonic Corporation | Organic electroluminescence display panel and organic electroluminescence display device |
US8981361B2 (en) | 2011-02-25 | 2015-03-17 | Panasonic Corporation | Organic electroluminescence display panel with tungsten oxide containing hole injection layer that electrically connects electrode to auxiliary wiring, and organic electroluminescence display device |
US8884276B2 (en) | 2011-05-11 | 2014-11-11 | Panasonic Corporation | Organic EL display panel and organic EL display apparatus |
JPWO2013014883A1 (en) * | 2011-07-25 | 2015-02-23 | パナソニック株式会社 | Display device |
US9478598B2 (en) | 2011-11-07 | 2016-10-25 | Joled Inc. | Organic electroluminescence display panel and organic electroluminescence display apparatus |
US9472606B2 (en) | 2011-11-07 | 2016-10-18 | Joled Inc. | Organic electroluminescence display panel and organic electroluminescence display apparatus |
JPWO2013069042A1 (en) * | 2011-11-07 | 2015-04-02 | パナソニック株式会社 | Organic EL display panel and organic EL display device |
JPWO2013069041A1 (en) * | 2011-11-07 | 2015-04-02 | パナソニック株式会社 | Organic EL display panel and organic EL display device |
US9209227B2 (en) | 2011-11-07 | 2015-12-08 | Joled Inc. | Organic electroluminescence display panel and organic electroluminescence display apparatus |
US9000430B2 (en) | 2011-11-24 | 2015-04-07 | Panasonic Corporation | EL display device and method for producing same |
US9006760B2 (en) | 2011-12-21 | 2015-04-14 | Panasonic Corporation | Display panel and display device |
US9111891B2 (en) | 2012-02-06 | 2015-08-18 | Joled Inc. | EL display apparatus and manufacturing method thereof |
US9178174B2 (en) | 2012-03-27 | 2015-11-03 | Sony Corporation | Display device and method of manufacturing the same, method of repairing display device, and electronic apparatus |
US9123682B2 (en) | 2012-05-09 | 2015-09-01 | Joled Inc. | Light-emitting device |
WO2013168365A1 (en) * | 2012-05-09 | 2013-11-14 | パナソニック株式会社 | Light-emitting device |
JPWO2013168365A1 (en) * | 2012-05-09 | 2016-01-07 | 株式会社Joled | Light emitting device |
US9449379B2 (en) | 2012-06-20 | 2016-09-20 | Panasonic Intellectual Property Management Co., Ltd. | Method for inspecting solution discharge apparatus and method for producing device |
WO2015030125A1 (en) * | 2013-09-02 | 2015-03-05 | 大日本印刷株式会社 | Top-emission organic electroluminescence display device and production method therefor |
KR102152744B1 (en) | 2013-09-02 | 2020-09-07 | 다이니폰 인사츠 가부시키가이샤 | Top-emission organic electroluminescence display device and production method therefor |
JP2015065161A (en) * | 2013-09-02 | 2015-04-09 | 大日本印刷株式会社 | Top-emission organic electroluminescent display device and manufacturing method therefor |
JP2015222728A (en) * | 2013-09-02 | 2015-12-10 | 大日本印刷株式会社 | Top-emission organic electroluminescent display device and manufacturing method therefor |
KR20160047476A (en) * | 2013-09-02 | 2016-05-02 | 다이니폰 인사츠 가부시키가이샤 | Top-emission organic electroluminescence display device and production method therefor |
US9273397B2 (en) | 2014-03-11 | 2016-03-01 | Panasonic Corporation | Method for inspecting liquid droplet ejection apparatus |
US9917277B2 (en) | 2014-04-04 | 2018-03-13 | Joled Inc. | Display panel and production method therefor |
US9929228B2 (en) | 2014-06-26 | 2018-03-27 | Joled Inc. | Display device |
WO2016017072A1 (en) * | 2014-07-30 | 2016-02-04 | パナソニックIpマネジメント株式会社 | Organic el element and organic el element manufacturing method |
JPWO2016017072A1 (en) * | 2014-07-30 | 2017-04-27 | パナソニックIpマネジメント株式会社 | ORGANIC EL ELEMENT AND METHOD FOR PRODUCING ORGANIC EL ELEMENT |
US10049622B2 (en) | 2014-09-29 | 2018-08-14 | Joled Inc. | Display device and method for driving display device |
KR102038838B1 (en) * | 2014-12-19 | 2019-11-26 | 제이에스알 가부시끼가이샤 | Light emitting device and manufacturing method for same, manufacturing method for barrier, and radiation-sensitive material |
WO2016098758A1 (en) * | 2014-12-19 | 2016-06-23 | Jsr株式会社 | Light emitting device and manufacturing method for same, manufacturing method for barrier, and radiation-sensitive material |
KR20170054496A (en) * | 2014-12-19 | 2017-05-17 | 제이에스알 가부시끼가이샤 | Light emitting device and manufacturing method for same, manufacturing method for barrier, and radiation-sensitive material |
US9954194B2 (en) | 2015-02-05 | 2018-04-24 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
JP2021089434A (en) * | 2015-05-29 | 2021-06-10 | 株式会社半導体エネルギー研究所 | Display device |
US9865669B2 (en) | 2015-09-16 | 2018-01-09 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
US10243033B2 (en) | 2015-09-16 | 2019-03-26 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
JP2017091878A (en) * | 2015-11-12 | 2017-05-25 | 株式会社ジャパンディスプレイ | Display device and manufacturing method |
US11430860B2 (en) | 2015-11-23 | 2022-08-30 | Samsung Display Co., Ltd. | Organic light-emitting diode display and method of manufacturing the same |
US10297656B2 (en) | 2015-11-23 | 2019-05-21 | Samsung Display Co., Ltd. | Organic light-emitting diode display and method of manufacturing the same |
JP2018073526A (en) * | 2016-10-26 | 2018-05-10 | パイオニア株式会社 | Light emitting device |
US10665812B2 (en) | 2017-02-10 | 2020-05-26 | Joled Inc. | Organic EL display panel and method for producing organic EL display panel |
US10468623B2 (en) | 2017-02-16 | 2019-11-05 | Joled Inc. | Organic EL display panel and method of manufacturing organic EL display panel |
JP2021048426A (en) * | 2017-03-10 | 2021-03-25 | パイオニア株式会社 | Light-emitting device |
JP2018152169A (en) * | 2017-03-10 | 2018-09-27 | パイオニア株式会社 | Light-emitting device |
US10937988B2 (en) | 2017-04-05 | 2021-03-02 | Joled Inc. | Organic EL display panel and method of manufacturing organic EL display panel |
US10319935B2 (en) | 2017-04-05 | 2019-06-11 | Joled Inc. | Organic EL display panel and method of manufacturing organic EL display panel |
US10516133B2 (en) | 2017-04-05 | 2019-12-24 | Joled Inc. | Organic EL display panel and method of manufacturing organic EL display panel |
JP2018181460A (en) * | 2017-04-05 | 2018-11-15 | 株式会社Joled | Organic el display panel and manufacturing method of organic el display panel |
JP2018200787A (en) * | 2017-05-26 | 2018-12-20 | 株式会社ジャパンディスプレイ | Display device |
US10749134B2 (en) | 2018-04-24 | 2020-08-18 | Joled Inc. | Organic EL display panel |
TWI750656B (en) * | 2019-05-13 | 2021-12-21 | 日商日本顯示器股份有限公司 | Display device |
WO2020230497A1 (en) * | 2019-05-13 | 2020-11-19 | 株式会社ジャパンディスプレイ | Display device |
CN113113462A (en) * | 2021-04-14 | 2021-07-13 | 武汉京东方光电科技有限公司 | Display panel and display device |
CN113113462B (en) * | 2021-04-14 | 2023-08-11 | 武汉京东方光电科技有限公司 | Display panel and display device |
WO2023012571A1 (en) * | 2021-08-05 | 2023-02-09 | 株式会社半導体エネルギー研究所 | Display device |
JP2023541726A (en) * | 2021-08-18 | 2023-10-04 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | display panel |
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