JP2002296781A - Resist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive resist composition having high resolution and preferable profiles by exposure with KrF laser light, especially having excellent transmittance for light at <=170 nm wavelength and suitable for F2 excimer laser lithography. SOLUTION: The composition contains a resin and radiation-sensitive compounds. The resin becomes alkali-soluble by the effect of the radiation compound after irradiation of radiation and has the units expressed by formulae (I), (II) and (III). In formula (I), R<1> is a hydrogen atom, halogen atom, cyano group, 1-3C alkyl group or 1-12C fluoroalkyl group. In formula, each of R<2> and R<3> is independently a 1-12C fluoroalkyl group, and R<4> is a hydrogen atom, halogen atom, cyano group, 1-3C alkyl group or 1-12C fluoralkyl group. In formula III, each of R<2> , R<3> , R<4> is the same as represented in formula (II) and R<5> is a group which is separated by an acid.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist composition used for fine processing of a semiconductor.

[0002]

2. Description of the Related Art A lithography process using a resist composition is usually employed for fine processing of a semiconductor. In lithography, Rayleigh is used.
gh), the shorter the exposure wavelength, the higher the resolution in principle. Exposure light sources for lithography used for manufacturing semiconductors include g-line having a wavelength of 436 nm, i-line having a wavelength of 365 nm,
8 nm KrF excimer laser, wavelength 193 nm A
The wavelength is getting shorter every year with rF excimer laser.
Further, as a next-generation exposure light source, an F ₂ excimer laser having a wavelength of 157 nm is expected to be promising. For KrF excimer laser exposure and ArF excimer laser exposure, a so-called chemically amplified resist utilizing the catalytic action of an acid generated by exposure is widely used because of its excellent sensitivity. Chemically amplified resists are also expected for F ₂ excimer laser exposure.

As a resist for KrF excimer laser exposure, a polyvinylphenol-based resin has been used. On the other hand, the resin used for the resist for ArF excimer laser exposure does not have an aromatic ring in order to secure the transmittance of the resist, and has an alicyclic ring instead of the aromatic ring in order to have dry etching resistance. Things are known to be good.

However, resins used in conventional resist KrF excimer laser exposure or ArF excimer laser exposure, 170 nm or less wavelengths of light, for example, with respect to F ₂ excimer laser with a wavelength of 157 nm, a sufficient permeation No rate was shown. When the transmittance is low, various properties such as profile, contrast, and sensitivity are adversely affected.

The polymer containing the polymerized unit (I) in the present invention has been studied as a resist (J. Photopolym. S).
ci. Technol., Vol.13, No.3, 459, (2000)). Also,
Proc. SPIE-Int. Soc. Opt. Eng., Proc. SPIE-Int. Soc. Opt. Eng.
(1998) 3333, JP-A-6-16730, JP-A-7
-234511, JP-A-9-73173,
JP-A-10-301285, JP-A-11-258
809, JP-A-11-352694, and the like have proposed a resist composition using a resin having a nitrile group.

Proc. SPIE vol. 1672 500 (1992)
In DE 42 07 261 the polymer containing polymerized units (II) according to the invention was considered as a resist.

[0007]

SUMMARY OF THE INVENTION An object of the present invention is to provide Kr
It has high resolution and a good profile in F exposure, and particularly has excellent transmittance for light having a wavelength of 170 nm or less, and F ₂
An object of the present invention is to provide a positive resist composition suitable for excimer laser lithography.

[0008]

Means for Solving the Problems The present inventors have found that the above problems can be solved by using a resin in which a polymerization unit derived from a specific monomer is combined as a resin constituting a resist composition. Completed the invention.

That is, the present invention comprises a resin and a radiation-sensitive compound, wherein the resin undergoes a chemical change by the action of the radiation-sensitive compound after irradiation and becomes alkali-soluble. Polymerized unit represented by I) and the following formula
The present invention relates to a resist composition having a polymerized unit represented by (II) and a polymerized unit represented by the following formula (III). (Wherein R ¹ is a hydrogen atom, a halogen atom, a cyano group,
Represents an alkyl group having 1 to 3 carbon atoms or a fluoroalkyl group having 1 to 12 carbon atoms having at least one fluorine atom. ) (Wherein, R ² and R ³ each independently represent a C 1-12 fluoroalkyl group having at least one fluorine atom, and R ⁴ represents a hydrogen atom, a halogen atom, a cyano group, a C 1 Represents an alkyl group of 1 to 3 or a fluoroalkyl group of 1 to 12 carbon atoms having at least one fluorine atom.) ^{(Wherein, R 2, R 3, R} 4 are the same as those represented in Formula (II), represents a group R ⁵ is cleaved by acid.)

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The resin in the resist composition of the present invention is a resin which undergoes a chemical change by the action of a radiation-sensitive compound after irradiation and becomes alkali-soluble. Later, a chemical change is caused by the action of the radiation-sensitive compound, and the compound becomes alkali-soluble.

The irradiated portion of the resist film containing the resin is removed by alkali development to form a positive resist. In the chemically amplified positive resist, an acid or a base, preferably an acid, generated from a radiation-sensitive compound in a radiation-irradiated part is diffused by a subsequent heat treatment (post exposure bake) to cleave a protective group such as a resin. By regenerating the acid or base, preferably the acid, the irradiated part is alkali-solubilized.

In the resist composition of the present invention, a resin having a polymerized unit represented by the above formula (I), a polymerized unit represented by the formula (II) and a polymerized unit represented by the formula (III) is used. .

R ⁵ in the formula (III) represents a group which is cleaved by an acid and has a dissolution inhibiting ability in an alkali developing solution.
Use a group that is cleaved by an acid. Examples of such a group include a t-butoxycarbonyl group, an isopropoxycarbonyl group, a pentyloxycarbonyl group, a trimethylsilyl group, a t-butyl group, a 1-methyl-1-phenylethyl group, and the like. Butoxycarbonyl group.

The above-mentioned resin having an acid-cleavable group can be preferably applied as a positive resist using an acid generator as a radiation-sensitive compound.

Further, as the resist composition of the present invention, the resin has a polymerized unit represented by the following formula (I) in addition to the polymerized units of the formulas (II) and (III). (In the formula, R ⁶ represents a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 3 carbon atoms, or a fluoroalkyl group having 1 to 12 carbon atoms having at least one fluorine atom.) Is a polymerized unit derived from acrylonitrile and methacrylonitrile in the formula (I).

By incorporating the polymerized units of the formulas (I) to (III) into the resin, the profile of the resist performance is remarkably improved. Further, the transmittance to light having a wavelength of 170 nm or less, for example, an F ₂ excimer laser having a wavelength of 157 nm is excellent. The respective proportions of the polymerized units of the formulas (I) to (III) can achieve such performance, and the resin itself is insoluble or hardly soluble in an alkali developing solution. What is necessary is just to select within the range which becomes alkali-soluble. In general, the ratio of the polymerized unit of the formula (I) is appropriately selected from the range of about 5 to 95 mol%, preferably 5 to 60 mol% of the whole resin, although it depends on the type and type of the resist. do it. Further, the total ratio of the polymerized units of the formulas (II) and (III) may be appropriately selected from the range of about 95 to 5 mol%, preferably 95 to 40 mol%, of the whole resin.
Further, the ratio of the polymerization units of the formula (II) and the formula (III) can be arbitrarily selected, preferably, the polymerization unit of the formula (III) is
What is necessary is just to select suitably from the range of 10-60 mol% with respect to the whole resin.

The resist composition of the present invention contains the resin described above and a radiation-sensitive compound. The radiation-sensitive compound is preferably decomposed by the action of radiation.
The resin has a group that is cleaved by the action of an acid and is itself insoluble in alkali, but becomes alkali-soluble after the group that is cleaved by the action of an acid is cleaved. When acting, an acid generator that generates an acid by the action of radiation is used as the radiation-sensitive compound.

Examples of the acid generator as a radiation-sensitive compound include various compounds that generate an acid by irradiating the substance itself or a resist composition containing the substance with radiation. Examples thereof include onium salts, halogenated alkyltriazine compounds, disulfone compounds, compounds having a diazomethanesulfonyl skeleton, and sulfonic acid ester compounds. Specific examples of such an acid generator are shown below.

Onium salts: diphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium hexafluoroantimonate, 4-methoxyphenylphenyliodonium trifluoromethanesulfonate, bis (4-tert-butylphenyl) iodonium tetrafluoroborate, bis (4 -Tert-butylphenyl) iodonium hexafluorophosphate, bis (4-tert-butylphenyl) iodonium hexafluoroantimonate, bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyliodonium camphor) Sulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroan Timmonate,
Triphenylsulfonium trifluoromethanesulfonate, 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, p-tolyldiphenylsulfonium trifluoromethanesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate , 4-tert-butylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate, 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate, 1-
(2-naphthoylmethyl) thiolanium hexafluoroantimonate, 1- (2-naphthoylmethyl) thiolanium trifluoromethanesulfonate, 4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate, 4-hydroxy-1-naphthyldimethylsulfonium Trifluoromethanesulfonate and the like.

Halogenated alkyl triazine compound:
2-methyl-4,6-bis (trichloromethyl) -1,
3,5-triazine, 2,4,6-tris (trichloromethyl) -1,3,5-triazine, 2-phenyl-
4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-chlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4
-Methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxy-
1-naphthyl) -4,6-bis (trichloromethyl)-
1,3,5-triazine, 2- (benzo [d] [1,
3] dioxolan-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl) -4,6-bis (trichloromethyl)-
1,3,5-triazine, 2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl)-
1,3,5-triazine, 2- (3,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,
3,5-triazine, 2- (2,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5
-Triazine, 2- (2-methoxystyryl) -4,6
-Bis (trichloromethyl) -1,3,5-triazine,
2- (4-butoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-pentyloxystyryl) -4,6-bis (trichloromethyl) -1,3 , 5-triazine and the like.

Disulfone compounds: diphenyl disulfone, di-p-tolyl disulfone, phenyl p-tolyl disulfone, phenyl p-methoxyphenyl
Disulfone and the like.

Compounds having a diazomethanesulfonyl skeleton: bis (phenylsulfonyl) diazomethane, bis (4-chlorophenylsulfonyl) diazomethane, bis (p-tolylsulfonyl) diazomethane, bis (4-te
rt-butylphenylsulfonyl) diazomethane, bis (2,4-xylylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, (benzoyl) (phenylsulfonyl) diazomethane and the like.

Sulfonate compounds: 1-benzoyl-1-phenylmethyl p-toluenesulfonate (commonly called benzoin tosylate), 2-benzoyl-2-
Hydroxy-2-phenylethyl p-toluenesulfonate (commonly called α-methylol benzoin tosylate),
1,2,3-benzenetriyl trismethanesulfonate, 2,6-dinitrobenzyl p-toluenesulfonate, 2-nitrobenzyl p-toluenesulfonate, 4-nitrobenzyl p-toluenesulfonate,
N- (phenylsulfonyloxy) succinimide, N
-(P-tolylsulfonyloxy) succinimide, N
-(Trifluoromethylsulfonyloxy) succinimide, N- (isopropylsulfonyloxy) succinimide N- (n-butylsulfonyloxy) succinimide, N- (n-hexylsulfonyloxy) succinimide, N- (10-camphorsulfonyloxy) succinimide N- (trifluoromethylsulfonyloxy) phthalimide, N- (trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboximide, N- (trifluoromethylsulfonyloxy) naphthalimide, N- (10 -Camphorsulfonyloxy) naphthalimide and the like.

Further, in the resist composition of the present invention, by adding a basic compound, especially a basic nitrogen-containing organic compound, for example, an amine, the performance due to the deactivation of the acid accompanying withdrawal after irradiation with radiation. Deterioration can be improved. Specific examples of the basic compound include those represented by the following formulas.

[0025]

In the formula, R ¹¹ , R ¹² and R ¹⁷ each independently represent hydrogen, alkyl, cycloalkyl, aryl or alkoxy. The alkyl, cycloalkyl, aryl, or alkoxy may be each independently substituted with a hydroxyl group, an amino group, or an alkoxy group having 1 to 6 carbon atoms. The amino group may be substituted with an alkyl group having 1 to 4 carbon atoms. Further, the alkyl preferably has about 1 to 6 carbon atoms, the cycloalkyl preferably has about 5 to 10 carbon atoms, and the aryl has 6 to 1 carbon atoms.
It is preferably about 0, and the alkoxy preferably has about 1 to 6 carbon atoms. R ¹³ , R ¹⁴ and R ¹⁵ are each independently
Represents hydrogen, alkyl, cycloalkyl, aryl or alkoxy. The alkyl, cycloalkyl, aryl,
Alternatively, each alkoxy may be independently substituted with a hydroxyl group, an amino group, or an alkoxy group having 1 to 6 carbon atoms. The amino group may be substituted with an alkyl group having 1 to 4 carbon atoms. The alkyl has 1 carbon atom.
About 6 is preferable, and the cycloalkyl has 5 to 5 carbon atoms.
The aryl is preferably about 6 to 10 carbon atoms, and the alkoxy is preferably about 1 to 6 carbon atoms. R ¹⁶ represents alkyl or cycloalkyl.
The alkyl or cycloalkyl may be independently substituted with a hydroxyl group, an amino group, or an alkoxy group having 1 to 6 carbon atoms. The amino group may be substituted with an alkyl group having 1 to 4 carbon atoms. The alkyl is
The cycloalkyl preferably has about 1 to 6 carbon atoms, and the cycloalkyl preferably has about 5 to 10 carbon atoms. A represents alkylene, carbonyl, imino, sulfide or disulfide.
The alkylene preferably has about 2 to 6 carbon atoms. In addition, any of R ^{11 to} R ¹⁷ that can have both a linear structure and a branched structure may be used.

Further, a hindered amine compound having a piperidine skeleton as disclosed in JP-A-11-52575 can also be used.

The resist composition of the present invention may contain 60 to 99.9% by weight of the resin and 40 to 0.1% by weight of the acid generator based on the total weight of the resin and the acid generator. Preferably, the resin is 80 to 99.9% by weight and the acid generator is 20%.
More preferably, it is contained in the range of 0.1 to 0.1% by weight.

When a basic compound is used in the composition of the present invention, the basic compound is used in an amount of 0.1 part by weight based on 100 parts by weight of the resin.
It is preferable to contain it in the range of about 01 to 1 part by weight.
Further, the composition of the present invention can contain a small amount of various additives such as a sensitizer, another resin, a surfactant, a stabilizer, and a dye, if necessary.

The resist composition of the present invention usually becomes a liquid resist composition in a state where each of the above-mentioned components is dissolved in a solvent, and is applied to a substrate such as a silicon wafer by a conventional method such as spin coating. . The solvent used here may be any as long as it dissolves each component, has an appropriate drying rate, and gives a uniform and smooth coating film after the solvent evaporates. A solvent generally used in this field is used. Can.

For example, glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate or propylene glycol monomethyl ether acetate; ethers such as diethylene glycol dimethyl ether; esters such as ethyl lactate, butyl acetate, amyl acetate or ethyl pyruvate. Ketones such as acetone, methyl isobutyl ketone, 2-heptanone or cyclohexanone; or γ
-Cyclic esters such as butyrolactone. These solvents can be used alone or in combination of two or more.

The resist film applied on the substrate and dried is subjected to an exposure treatment for patterning, and then to a heat treatment for promoting a deprotection group reaction or a cross-linking reaction. Is developed. The alkaline developer used here can be various alkaline aqueous solutions used in this field, but generally, aqueous solutions of tetramethylammonium hydroxide and (2-hydroxyethyl) trimethylammonium hydroxide (commonly known as choline) are used. Often used.

[0033]

Next, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples. Parts in the examples are by weight unless otherwise specified. The weight average molecular weight is a value determined by gel permeation chromatography using polystyrene as a standard.

(1a) Synthesis of 4- (2-hydroxyhexafluoroisopropyl) styrene and methacrylonitrile copolymer (50:50) (MY-016) A magnetic stirrer, a cooling tube, a thermometer, and a nitrogen inlet tube were used. 50 with
In a 3-mL three-necked flask, 5.13 g of 4- (2-hydroxyhexafluoroisopropyl) styrene, 1.27 g of methacrylonitrile, and 0.1% of azobisisobutyronitrile were added.
19 g and 12.82 g of methyl isobutyl ketone were added, and 7
The temperature was raised to 5 ° C. and kept for 10 hours. After cooling to room temperature, N
The reaction solution was poured into 128 g of heptane, and the precipitated resin was separated by filtration and dried under reduced pressure to obtain a resin. The amount of the obtained resin was 5.7 g, and the weight average molecular weight was 12100.
Met. This resin is designated as A.

(1b) Copolymer of partially t-butoxycarbonylated 4- (2-hydroxyhexafluoroisopropyl) styrene and methacrylonitrile (50:50)
Synthesis of (MY-025) 50 equipped with a magnetic stirrer, a cooling tube, a thermometer, and a nitrogen introducing tube
A solution in which 2.0 g of resin A, 10.0 g of tetrahydrofuran, and 1.8 g of potassium carbonate were added to a mL three-necked flask and heated to reflux temperature, and 0.91 g of di-t-butyl dicarbonate was dissolved in 5.0 g of tetrahydrofuran. Was added. Thereafter, the mixture was kept at the reflux temperature for 6 hours. After cooling to room temperature, ethyl acetate was added, and the oil layer was washed twice with 5% aqueous acetic acid and five times with ion-exchanged water. After concentrating the obtained oil layer, it was poured into a mixed solution of methanol and ion-exchanged water 1: 1 and the precipitated resin was removed by decantation. Thereafter, the resin was dried under reduced pressure to obtain a resin. The amount of the obtained resin is 1.8 g,
The t-butoxycarbonylation rate was 14%. This resin is designated as B.

(2a) 4- (2-hydroxyhexafluoroisopropyl) styrene polymer (MY-005)
Synthesis of magnetic stirrer, cooling tube, thermometer, nitrogen introduction tube
To a 0 mL three-necked flask, 15.13 g of 4- (2-hydroxyhexafluoroisopropyl) styrene and 15.13 g of toluene were added, and the temperature was raised to 75 ° C., and 0.28 g of azobisisobutyronitrile was added to 15.13 g of toluene. The dissolved solution was added dropwise over 30 minutes. Then at 75 ° C for 10
Incubated for hours. After cooling to room temperature, 151 g of N-heptane
The precipitated resin was taken out by decantation and dissolved in acetone. Further, the solution was poured into 151 g of N-heptane, and the precipitated resin was taken out by decantation. Thereafter, the resin was dried under reduced pressure to obtain a resin. The amount of the obtained resin was 13.13 g, and the weight average molecular weight was 28,800. This resin is designated as X.

(2b) Synthesis of partially tert-butoxycarbonylated 4- (2-hydroxyhexafluoroisopropyl) styrene polymer (MY-023) 50 parts equipped with a magnetic stirrer, a cooling tube, a thermometer, and a nitrogen inlet tube.
A solution in which 2.0 g of resin X, 10.0 g of tetrahydrofuran, and 1.13 g of potassium carbonate were added to a mL three-necked flask, the temperature was raised to the reflux temperature, and 1.45 g of di-t-butyl dicarbonate was dissolved in 7.5 g of tetrahydrofuran. Was added. Thereafter, the temperature was maintained at the reflux temperature for 21.5 hours. After cooling to room temperature,
Ethyl acetate was added, and the oil layer was washed twice with 5% acetic acid water and five times with ion-exchanged water. After concentrating the obtained oil layer, it was poured into a mixed solution of methanol and ion-exchanged water 1: 1 and the precipitated resin was removed by decantation. Thereafter, the resin was dried under reduced pressure to obtain a resin. The amount of the obtained resin was 1.8 g, and the t-butoxycarbonylation ratio was 44%.
This resin is designated as Y.

Next, in addition to each of the resins obtained in the above resin synthesis examples, a resist composition was prepared using the following acid generator and quencher, and evaluated. Example 1 and Comparative Examples 1-2 The following components were mixed and dissolved, and the pore size was 0.2 μm.
Was filtered through a fluororesin filter to prepare a resist solution.

Resin (type is described in Table 1) 10 parts Acid generator: p-tolyldiphenylsulfonium perfluorooctanesulfonate 0.2 part Quencher: 2,6-diisopropylaniline 0.0075 part Solvent: propylene glycol monomethyl ether Acetate 95 parts γ-butyrolactone 5 parts

Measurement of Transmittance On the other hand, the previously prepared resist solution was applied to a magnesium fluoride wafer so that the film thickness after drying was 0.1 μm, and placed on a direct hot plate at 110 ° C. for 60 seconds. Pre-bake,
A resist film was formed. The transmittance of the thus formed resist film at a wavelength of 157 nm was measured using a vacuum ultraviolet spectrophotometer (manufactured by JASCO Corporation), and the results shown in Table 1 were obtained.

KrF exposure Measurement of film removal sensitivity "D" which is a composition for an organic antireflection film manufactured by Brewer
By applying UV-42 ″ and baking at 215 ° C. for 60 seconds, the resist solution prepared above was dried on a silicon wafer on which a 600 ° -thick organic antireflection film had been formed. After the resist solution was applied, the film was pre-baked (P for 60 seconds on a direct hot plate at the temperature shown in Table 1).
B) The wafer on which the resist film was formed in this way,
KrF excimer stepper [“NSR” manufactured by Nikon Corporation
2205EX-12B ″, NA = 0.55, σ = 0.
8], the line and space pattern was exposed while changing the exposure amount stepwise. After the exposure, post-exposure baking (PEB) was performed on a hot plate at a temperature shown in Table 1 for 60 seconds, and paddle development was performed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide for 60 seconds. The line and space pattern after development on the organic antireflection film substrate was observed with a scanning electron microscope, and the effective sensitivity and resolution were examined by the following methods. The results are shown in Table 1.

Effective sensitivity: Display was performed at an exposure amount at which a 0.20 μm line and space pattern became 1: 1. Resolution: Displayed with the minimum size of a line and space pattern separated by the exposure amount of the effective sensitivity. Profile T / B: Shown by the ratio of the length of the top (shown as T) and the bottom (shown as B) of the 0.20 μm line. 1
The closer to, the better the profile.

[0043]

[Table 1]

[0044]

The resist composition of the present invention has high resolution and good profile by KrF exposure,
Excellent transmittance with respect to light having a wavelength of not more than nm, for example, exhibits high transmittance in exposure using an F ₂ excimer laser having a wavelength of 157 nm, and exhibits excellent performance as a resist composition using a light source having a wavelength of 170 nm or less. can do.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshiko Miya 3-1-198, Kasuganaka, Konohana-ku, Osaka Sumitomo Chemical Co., Ltd. F-term (reference) 2H025 AA01 AA02 AA03 AA09 AB16 AC08 AD03 BE00 BE10 BF04 BF08 BF09 CB16 CB17 CB41 CB45 CC20 FA17 4J100 AB07Q AB07R AM02P AM03P BA03Q BA04R BB00P BB07P BB07Q CA05 JA38

Claims (7)

[Claims] 1. A composition comprising a resin and a radiation-sensitive compound, wherein the resin undergoes a chemical change by the action of the radiation-sensitive compound after irradiation to become alkali-soluble, and is represented by the following formula (I): A resist composition comprising a polymerized unit represented by the following formula (II) and a polymerized unit represented by the following formula (III). (Wherein R ¹ is a hydrogen atom, a halogen atom, a cyano group,
Represents an alkyl group having 1 to 3 carbon atoms or a fluoroalkyl group having 1 to 12 carbon atoms having at least one fluorine atom. ) (Wherein, R ² and R ³ each independently represent a C 1-12 fluoroalkyl group having at least one fluorine atom, and R ⁴ represents a hydrogen atom, a halogen atom, a cyano group, a C 1 Represents an alkyl group of 1 to 3 or a fluoroalkyl group of 1 to 12 carbon atoms having at least one fluorine atom.) (In the formula, R ² , R ³ and R ⁴ are the same as those represented in the formula (II), and R ⁵ represents a group that can be cleaved by an acid.) 2. R ⁵ in the formula (III) is a t-butoxycarbonyl group, an isopropoxycarbonyl group, a pentyloxycarbonyl group, a trimethylsilyl group, a t-butyl group or a 1-methyl-1-phenylethyl group. The composition of claim 1. (3) R ² and R ^{3 in the} formulas (II) and (III) are
3. The composition according to claim 1, wherein each of them is trifluoromethyl. 4. The polymerization unit represented by the formula (I) is 5 to 95 mol% based on the whole resin, and the total of the polymerization units represented by the formulas (II) and (III) is based on the whole resin. 95-5
The composition according to any one of claims 1 to 3, which is mol%. 5. The composition according to claim 1, wherein the radiation-sensitive compound is an active compound which generates an acid by the action of radiation and acts positively. 6. The method according to claim 1, further comprising a basic compound.
The composition according to any one of claims 1 to 5. 7. The composition according to claim 6, wherein the basic compound is in the range of 0.001 to 1 part by weight based on 100 parts by weight of the resin.