JP2002258118A - Manufacturing method and manufacturing apparatus for optical semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus for an optical semiconductor module in which the highly precise optical axis alignment is enabled, even if infrared rays penetrate neither optical parts nor substrates and in addition, even if the laser beam is not oscillated by energizing LD(Laser Diode) in the state where the LD is not joined to the substrate. SOLUTION: The manufacturing method of an optical semiconductor module made by fixing an optical fiber 11 and a laser diode 14, or a photodiode on a substrate 16 is provided with a process for fixing the above optical fiber to a prescribed position on the above substrate, and a process for fixing the diode to the substrate at the position where the laser beam having the same wavelength as the laser wavelength which the diode to oscillates or detects is made incident on the diode from the optical fiber and the 42 photoelectric current detected from the diode becomes maximum.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of an optical semiconductor module used for, for example, optical communication and optical information processing. ), And positioning of optical components such as photodiodes (hereinafter, sometimes abbreviated as PDs).

[0002]

2. Description of the Related Art Optical semiconductor modules such as an LD module having an optical transmitting function, a PD module having an optical receiving function, and an optical transmitting and receiving module are basic devices constituting an optical communication system supporting an advanced information society. The transmitting and receiving module includes an LD as a light emitting element and a P as a light receiving element.
D, an optical fiber, a lens for optically coupling them, an optical multiplexer / demultiplexer, and a housing or substrate for fixing them.

[0003] In particular, with the recent development of the information-oriented society, from the development of large-scale, large-capacity trunk-line optical communication systems centering on the trunk line, to the application of subscriber-based optical communication systems such as buildings and homes. Are being considered. For this reason, optical semiconductor modules are required to be multifunctional, compact, and inexpensive.

FIG. 7 is a perspective view showing an example of the internal structure of a subscriber optical transmission / reception module. With a wavelength multiplexing function and an optical branching function, bidirectional optical transmission and reception can be performed by one module. In the figure, reference numeral 11 denotes a transmission / reception optical fiber, which has a communication wavelength of 1.5 μm for reception and 1. μm for transmission.
Light having a wavelength of 3 μm is used. 12 is a waveguide lens, 13 is an optical multiplexer / demultiplexer, 14 is a transmission LD, 15 is a monitor PD for keeping the output of the LD 14 constant, 16 is a silicon (Si) substrate, 17 is an avalanche photodiode (APD), 1
8 is Si for positioning and fixing the optical fiber 11.
This is a V-groove provided in the substrate 16. The optical multiplexer / demultiplexer 13 has a structure in which a polymer waveguide is bonded on a Si component. The optical fiber 11 is fixed to a V-groove 18 formed on the Si substrate 16 by anisotropic etching using an adhesive. After confirming that the other optical components (optical multiplexer / demultiplexer 13, transmission LD 14, monitor PD 15, and APD 17) function as optical components, solder or adhesive is applied onto one Si substrate 16. And joined together.

Conventionally, a waveguide lens 12 has been inserted into the coupling between optical components in order to suppress light loss at the coupling portion. However, since the use of the waveguide lens 12 complicates the configuration of the optical semiconductor module, the configuration of the module becomes large, and the number of working steps leads to an increase in the price of the module. The method of FIG. 8 is adopted in which the waveguide lens is omitted by matching.

When the optical axes are directly aligned, the deviation of the optical axes is 1
If the error is not suppressed to less than μm, the optical coupling loss between the optical components increases, so that it cannot be used as an optical transceiver module.

Prior art 1. As a method of aligning the optical axis of an optical component with high precision, for example, as disclosed in Japanese Patent Application Laid-Open No. 9-145317, a structure in which the refractive index of the optical component is discontinuous when irradiated with infrared light is used. There is a method of performing positioning using an interference fringe generated at the boundary of the refractive index distribution as a position reference. FIG. 9 is a conceptual diagram for explaining this method. In the figure, 81 is an optical circuit board, 82 is an optical component such as an LD, for example,
83 is the waveguide structure of the optical component 82, 84 is the optical circuit board 8
1 is a waveguide structure, 85 is an observation device, 86 is a control device,
87 is a light source, 88 is a condenser lens, and 89 is a manipulator. The optical component 82 and the optical circuit board 81 are irradiated with infrared light from a light source 87. Then, interference fringes appear in the waveguide structure part 83 of the optical component 82 and the waveguide structure part 84 of the optical circuit board 81 whose refractive indexes are different from those of the other parts. The interference fringes are observed by the observation device 85, and the alignment of the optical component 82 is performed using the manipulator 89 with reference to the interference fringes on the optical substrate 81.

Prior art 2. Also, Japanese Patent Application Laid-Open No. Hei 9-16673
As shown in Japanese Patent Publication No. 7, the LD is driven to emit light,
It is determined whether or not the outgoing light is coincident with the optical axis of the optical system, and the light emitting unit is placed at the coincident position with the base (substrate).
There is a method called an active alignment method of soldering and fixing.

Prior art 3. In addition, Japanese Patent Application Laid-Open No. 5-16494
As shown in Japanese Patent Publication No. 7, there is also a method of aligning the optical axis by forming a groove. FIG. 10 is a perspective view for explaining this method, in which 111 is an optical fiber, 112 is a substrate,
113 is an LD, 114 is a light emitting portion of the LD 113, 115 is a second cut (groove) for positioning LD mounting, 116 is a V-groove for fixing an optical fiber, 117 is a first cut (groove) for abutting a fiber end face. ), 118 is a lens, 119 is L
D A third notch (groove) for positioning. Substrate 1
12 is provided with a V-groove 116 for fixing an optical fiber and a first cut 117 for abutting the fiber end face.
2, the optical fiber 111, the lens 118 and the LD 11
The second and third cuts 115 and 119 for positioning LD mounting are provided in parallel and at right angles to the first cut 117 for abutting the fiber end face so that the optical axes of the three coincide.
After the lens 118 is integrally formed, the second and third cuts 115 and 119 for positioning the LD mounting and the side wall surfaces of the LD 118
The LD 113 is mounted so that the active surface of the D 113 coincides with the active surface of the D 113, and the first end (groove) 11 of the fiber end face is abutted against the V end groove 116 for fixing the optical fiber.
The optical fiber 111 is pushed in until it hits 7 and is aligned and fixed.

[0010]

However, in the case of the prior art 1 in which interference fringes generated in layers having different refractive indices of the optical component 82 are used for positioning, infrared light passes through the optical component 82 and the optical circuit board 81. LD, S
On the i-substrate, a metal thin film wiring and an alloy solder layer for bonding are formed, and since these reflect infrared rays, there is a problem that this method cannot be used.

Further, in the active alignment method of the prior art 2, it is necessary to energize the LD in a state where it is not joined to the substrate. In this case, heat is accumulated in the LD because it is not joined to the substrate. There is a problem that the optical axis is shifted after the joining. In addition, for stable laser emission, a current must be uniformly applied between the upper and lower parts of the LD.
There is also a problem that it is difficult to keep a current applied state constant during alignment.

In the method of forming a groove for alignment on a substrate according to the prior art 3, a groove is formed by a lithography process of a semiconductor. However, a groove as designed is formed due to a mask shift and an etching state at that time. Not done. for that reason,
If the optical component is merely mechanically aligned with the groove, the optical axis shift occurs, and the final positional accuracy is about ± 5 μm, which is the target 1
μm or less, and there was a problem that high-precision optical axis alignment was not possible. Note that the above positional accuracy is a value for one optical component, and when a plurality of optical components are aligned, the positional accuracy becomes worse depending on the number of optical components.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art. Even if infrared light does not pass through an optical component or a substrate and is not bonded to the substrate, the LD is energized. It is a first object of the present invention to provide a method and an apparatus for manufacturing an optical semiconductor module capable of performing highly accurate optical axis alignment without oscillating laser light. It is a second object of the present invention to provide a method of manufacturing an optical semiconductor module with high productivity by speeding up coarse positioning (temporary positioning) in a stage before performing high-precision optical axis alignment.

[0014]

A first method for manufacturing an optical semiconductor module according to the present invention is a method for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. Fixing the optical fiber at a predetermined position on the substrate, and irradiating a laser beam having the same wavelength as the laser wavelength of the oscillation or detection of the diode from the optical fiber to the diode, and detecting the laser light from the diode. And fixing the diode to the substrate at a position where the photocurrent is maximized.

A second method for manufacturing an optical semiconductor module according to the present invention is a method for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. Fixing the optical fiber at a position, and irradiating the diode with laser light having a wavelength shorter than the laser wavelength to be oscillated or detected from the optical fiber to the diode, and returning light from the diode to the optical fiber. And fixing the diode to the substrate at a position where the light intensity of the component corresponding to the oscillation of the diode or the laser wavelength to be detected is maximized.

A third method for manufacturing an optical semiconductor module according to the present invention is a method for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, Fixing the optical fiber and the optical multiplexer / demultiplexer at a predetermined position on the substrate, and the same as the laser wavelength to oscillate or detect the diode from the optical fiber to the diode through the optical multiplexer / demultiplexer. A step of receiving a laser beam having a wavelength and fixing the diode to the substrate at a position where the photocurrent detected from the diode is maximized.

A fourth method for manufacturing an optical semiconductor module according to the present invention is a method for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, A step of fixing the optical fiber and the diode at a predetermined position on the substrate, and a laser having the same wavelength as the laser wavelength at which the diode oscillates or detects the diode from the optical fiber through the optical multiplexer / demultiplexer. A step of receiving the light and fixing the optical multiplexer / demultiplexer to the substrate at a position where the photocurrent detected from the diode becomes maximum.

According to a fifth method of manufacturing an optical semiconductor module according to the present invention, in any of the first to fourth methods of manufacturing an optical semiconductor module, a laser beam is incident on the diode from the optical fiber. Before, the substrate and the optical multiplexer / demultiplexer or the diode are irradiated with laser light defocused on the pre-determined irregularities for provisional positioning formed at predetermined positions, and a dark field image including the irregularities is photographed. The method further comprises a step of temporarily positioning the optical multiplexer / demultiplexer or the diode on the substrate so that each bright spot observed corresponding to the unevenness comes to a position registered in advance.

A first optical semiconductor module manufacturing apparatus according to the present invention is an optical semiconductor module manufacturing apparatus in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, and the optical semiconductor module is fixed on the substrate. Means for injecting laser light from the optical fiber to the diode, means for detecting photocurrent flowing through the diode,
And means for holding the diode and making it movable on the substrate.

A second optical semiconductor module manufacturing apparatus according to the present invention is an optical semiconductor module manufacturing apparatus in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, and the optical semiconductor module is fixed on the substrate. Means for injecting a laser beam from the optical fiber to the diode, means for detecting the light intensity of the return light from the diode to the optical fiber, and means for holding the diode and allowing it to move on the substrate It is provided with.

A third optical semiconductor module manufacturing apparatus according to the present invention is an optical semiconductor module manufacturing apparatus in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, Means for injecting laser light from an optical fiber fixed on the substrate to the diode through the optical multiplexer / demultiplexer, means for detecting a photocurrent detected from the diode, and the optical multiplexer / demultiplexer or the diode And means for holding it and making it movable on the substrate.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 1 to 3 are views for explaining a method and an apparatus for manufacturing an optical semiconductor module according to a first embodiment of the present invention. FIG. 1 is a perspective view showing the internal structure of an LD module manufactured according to the present embodiment, and FIG. 2 is a perspective view illustrating a temporary positioning step. 3A and 3B are views for explaining a high-accuracy positioning process by detecting a photocurrent, and FIG. 3A is a perspective view,
(B) is a side view. The LD module is a module having only an optical transmission function.

In FIG. 1, 11 is an optical fiber, 11a
Is a zirconia ferrule (connector to another optical fiber), 14 is an LD, and 16 is a Si substrate. Reference numeral 18 denotes a Si substrate 1 for positioning and fixing the optical fiber 11.
The V-groove provided in 6 is formed by, for example, wet etching. Reference numeral 31 denotes a Si cover for fixing the optical fiber 11 to the Si substrate 16, and has a V-groove 18 formed in the same manner as the Si substrate 16. 32 is Si
These are holes for temporary positioning corresponding to irregularities for temporary positioning formed at predetermined positions of the substrate 16 and the LD 14.

In FIG. 2, reference numeral 33 denotes a Si substrate 16.
And a gold / tin solder layer for bonding the LD 14 to a metal wiring pattern for energizing the LD 14, a metal wiring pattern 33a, and a gold / tin solder layer 33b. 34 is a CCD camera corresponding to an observation device, 35
Is a laser light source, 36 is a laser beam from the laser light source 35, 37 is a lens, and 38 is a laser beam defocused by the lens 37. Although not shown,
The CCD camera 34 is connected to a control device (for example, a computer). Although not shown, as a means for holding the LD 14 and making it movable on the Si substrate 16, for example, a collet with a three-dimensional actuator 43 shown in FIG. The collet with the three-dimensional actuator is controlled by the computer.

The CCD camera 34 has an optical microscope (100
The laser beam 38 defocused is, for example, 8 times with respect to the plane of the Si substrate 16.
Irradiation is performed at an incident angle of 0 degree, but the microscope is arranged in a dark field portion which does not detect the incident light and the reflected light. Specifically, the angle is between 30 degrees and 150 degrees with respect to the plane of the Si substrate 16. The LD 14 is also irradiated with the defocused laser light similarly to the Si substrate 16. At this time, when the CCD camera 34 does not enter a common dark field portion with respect to the plane of the Si substrate 16 and the side of the LD 14, a laser light source and a CCD camera are added and arranged so as to recognize the bright spots of the scattered light.

In FIG. 3, reference numeral 41 denotes an electrode for measuring a photocurrent connected from the side surface to a region close to the top and bottom surfaces of the LD 14, and 42 denotes an ammeter for detecting a minute current flowing through the LD 14. Reference numeral 43 denotes a collet provided with a three-dimensional actuator, which corresponds to a unit that holds the LD 14 and enables the LD 14 to move on the Si substrate 16. 44 is an optical axis and 45 is a laser light source.

Next, the manufacturing method will be described. LD1
No. 4 is manufactured by epitaxially growing a compound semiconductor layer such as AlGaAs on a GaAs single crystal substrate.
The end face of D14 has a high flatness due to the cleavage face. LD1
A hole 32 for provisional positioning of 1 μm in length and width and 3 μm in depth is formed at a predetermined position on the end face 4 which does not affect the operation of the LD 14 by anisotropic etching. Further, the same temporary positioning holes 32 are formed at predetermined positions of the Si substrate 16 by anisotropic etching.

At the time of provisional positioning, first, the optical fiber 11 is placed in the V-groove 18 provided on the Si substrate 16, and the V-groove 18 is placed on the optical fiber 11 and the Si substrate 16.
Is formed, and each is fixed with a silver epoxy adhesive. Next, this LD 14 and Si
As described above, the Ar ion laser beam 38 defocused by a lens 37 on a wide area of the substrate 16 has a low angle (Si
Irradiation is performed on the plane of the substrate 16 at an incident angle of, for example, 80 degrees. Foreign matter on the flat part (in this case, hole 32 for temporary positioning)
If there is, the Ar ion laser light 38 is scattered and recognized as a bright spot in the dark field image. This bright spot is converted to a laser beam 38.
Is taken by a CCD camera 34 with a microscope installed in a dark field. The image captured by the CCD camera 34 is displayed on a CRT after image processing by a computer. The Si substrate 16 is fixed to the stage by a jig, and is set so as to always be at the same position with respect to the CCD camera 34. Further, the position of the CCD camera 34 is finely adjusted so that the bright spot from the Si substrate 16 is located at the center of the image.

Next, a collet provided with a three-dimensional actuator is controlled by a computer, and the LD 14 is placed on the Si substrate 1.
6 to be moved in the XYZ directions and automatically conveyed to a relative position registered in advance with respect to the bright spot at the center of the screen. This operation can be automated by processing the image from the CCD camera 34 with a computer, recognizing a bright spot from the contrast, and further converting the image into coordinates.

As described above, the LD 1 is placed on the Si substrate 16.
4 can be performed at a high speed. The error of the position obtained from the dark-field image is 1/4 of the wavelength, and 112 nm in the case of an Ar ion laser having a wavelength of 448 nm.
It is.

After provisional positioning based on the dark-field image of the scattered light, high-precision positioning is performed by measuring the photocurrent. Hereinafter, highly accurate positioning by measuring the photocurrent will be described with reference to FIG. Since the oscillation laser wavelength of the LD 14 is 1.3 μm, a laser beam having a wavelength of 1.3 μm is incident on the LD 14 from the optical fiber 11 by the external laser light source 45. Since the energy of the incident laser light is equal to the band gap energy of the photoactive layer of the LD 14, the magnitude of the photocurrent detected from the LD 14 by the ammeter 42 when the optical axis 44 coincides with the active layer of the LD 14 is determined. Will be the largest.

Therefore, the LD 14 is held by the collet 43 and moved on the Si substrate 16 while detecting the photocurrent, and the collet 43 is moved at the position where the photocurrent is maximum.
The LD 14 is bonded to the Si substrate 16 by heating the Si substrate 16 from the back surface with a heater (not shown) to melt the gold / tin solder formed on the Si substrate 16.

After bonding, wiring of the LD 14, the Si substrate 16, and the lead frame was performed, and the intensity of the laser light emitted from the optical fiber cable 11 and the coupling loss were measured by causing the LD 14 to emit light. Performance equal to or better than was obtained. Also, in the case of the present embodiment, it was confirmed that the optical coupling loss was extremely small even after several tens of trial productions.

When the current density of the photocurrent is small and the measurement by the ammeter 42 is difficult, the quantum efficiency of the LD 14 is increased by applying a bias between the electrodes 41 to increase the current value to be detected. Can be.

In the first embodiment, the case where the provisional positioning holes 32 having a length and width of 1 μm and a depth of 3 μm are provided as the projections and depressions for provisional positioning has been described. It may be a groove or a ridge. Furthermore, the size is 0.1 μm to 5 μm.
It is desirable that the thickness is about μm and the depth (height) is about 0.1 μm to 5 μm. If the height and width are smaller than 0.1 μm, the amount of scattered light is so small that it cannot be detected by the CCD camera 34. Also, depth (height)
Is smaller than 0.1 μm, scattered light cannot be detected.
If it is larger than μm, the scattered light spot becomes large and mounting accuracy is reduced.

In the first embodiment, the Si substrate 1
Although the case where the optical fiber 11 and the LD 14 are fixed on the optical fiber 6 so that the optical axes thereof are aligned and the LD module is manufactured has been described, the PD module may be manufactured by using a PD instead of the LD 14. can get.

Embodiment 2 FIG. 4 is a diagram illustrating a method and an apparatus for manufacturing an optical semiconductor module according to a second embodiment of the present invention. This embodiment is an embodiment in which the method and apparatus for manufacturing an LD module or a PD module described in the first embodiment are applied to bonding of an optical component of an optical transceiver module having a more complicated structure to a Si substrate. It is a form. In the optical transceiver module manufactured according to the present embodiment, an optical fiber 11 is bonded on a single Si substrate 16 with a silver epoxy adhesive, and an LD 14 for transmission, a PD 17 for reception, and light are combined. An optical multiplexer / demultiplexer 13 for splitting a wave and splitting is joined by gold / tin solder.

Next, the manufacturing method will be described. Most of the optical components (LD14, PD17, optical multiplexer / demultiplexer 13) are made of AlGaAs-based compound semiconductor or single crystal of Si, and the end faces of these optical components are cleavage planes, so that the flatness is high. . A temporary positioning hole 32 having a length of 1 μm and a width of 3 μm and a depth of 3 μm is formed by anisotropic etching at a predetermined position on the end face which does not affect the operation. Also, S
The same temporary positioning holes 32 are formed at predetermined positions of the i-substrate 16 by anisotropic etching.

First, referring to FIG.
1 is fixed to a V-groove 18 formed in the Si substrate 16 in advance using an adhesive. The PD 17 is also bonded to a predetermined position on the Si substrate 16 using gold / tin solder. In addition,
For positioning the PD 17 on the Si substrate 16, for example, a CCD camera similar to that described with reference to FIG. 2 in the first embodiment using the holes 32 for temporary positioning formed in the PD 17 and the Si substrate 16. Tentative positioning process performed from the observation of the bright spot position of the scattered light in the dark field image.

Next, the optical multiplexer / demultiplexer 13 and the Si substrate 16
The relative position between the optical multiplexer / demultiplexer 13 and the Si substrate 16 is roughly determined by the provisional positioning step performed by observing the bright spot position of the scattered light in the dark field image by the CCD camera using the temporary positioning hole 32 formed in After the adjustment, a laser beam having a wavelength of 1.5 μm, which is selectively absorbed by the PD 17 from the optical fiber 11 by the external laser light source (not shown), enters the PD 17 through the optical multiplexer / demultiplexer 13. . While measuring the photocurrent flowing from the PD 17, the optical multiplexer / demultiplexer 13 is held by the collet 43 with a three-dimensional actuator, and
The optical multiplexer / demultiplexer 13 is moved on the substrate 16 and joined to the Si substrate 16 at a position where the photocurrent value becomes maximum.

Next, in FIG. 4B, for the LD 14, the bright spot position of the scattered light in the dark field image is observed by the CCD camera using the temporary positioning holes 32 formed in the LD 14 and the Si substrate 16. After the relative position between the LD 14 and the Si substrate 16 is roughly adjusted by the provisional positioning process performed from step 1, a laser beam of 1.3 μm, which is the oscillation laser wavelength of the LD 14, The light enters the LD 14 through the optical multiplexer / demultiplexer 13. While measuring the photocurrent flowing from the LD 14, 3
LD1 by collet 43 with three-dimensional actuator
The LD 14 is moved on the Si substrate 16 while holding the LD 4, and the LD 14 is joined to the Si substrate 16 at a position where the photocurrent is maximized. In this way, it is possible to align the optical axis of the optical demultiplexer 13 and the LD 14 with high speed and high accuracy, and to position and join the optical splitter 13 and the LD 14 to the Si substrate 16.

In the optical transceiver module according to the present embodiment manufactured as described above, the deviation of the optical axis estimated from the coupling loss is 0.5 μm or less. This value is about 1/2 to 1/4 as compared with the case where the groove is formed by processing the Si substrate as described in the related art 3.

In the second embodiment, FIG.
, The optical fiber 11 and the PD 17 are
6 and the optical multiplexer / demultiplexer 13 is positioned and fixed in accordance with the optical axes of the optical fiber 11 and the PD 17. On the contrary, the optical fiber 11 and the optical multiplexer / demultiplexer 13 are And the PD 17 may be positioned and fixed in accordance with the optical axes of the optical fiber 11 and the optical multiplexer / demultiplexer 13, and the same effect can be obtained. Also,
The LD 14 may be used instead of the PD 17. Further, in FIG. 4B, the positions of the LD 14 and the PD 17 may be reversed.

Embodiment 3 FIG. 5 and 6 are views for explaining a method and an apparatus for manufacturing an optical semiconductor module according to a third embodiment of the present invention. FIG. 5 is an electronic band model diagram of an LD for explaining the principle thereof. FIG. 6 is a plan view illustrating a highly accurate positioning step by detecting the light intensity of the return light. In FIG. 5, 61 is a hole in the valence band, 62 is an electron band in the cladding layer, 63 is an electron band in the active layer, 64 is an electron in the conductor, and 65 is an LD.
Is the return light having the same wavelength as the laser wavelength at which the laser beam oscillates, 66 is the incident laser light, and 67 is the electronic band of the cladding layer. FIG.
In the above, 71 is a beam splitter, and 72 is a photodetector.

Next, the principle of high-precision positioning by measuring the intensity of the return light according to the present embodiment will be described with reference to FIG. When a laser beam 66 having a shorter wavelength (having energy equal to or greater than the laser beam oscillated by the LD) shorter than the laser wavelength oscillated by the LD from the optical fiber, the light incident on the LD is absorbed by the electronic band 63 of the active layer. The excited conduction band electrons 64 and the valence band holes 61 are generated, and a part of them is moved to the electron bands 62 and 67 of the cladding layer sandwiching the active layer by thermal excitation, so that a photocurrent source (hole) is generated. 61 and electrons 64). In addition, most of the electrons 64 of the conductor and the holes 61 of the valence band recombine inside the electron band 63 of the active layer, and at that time, return light 65 having the same wavelength as the laser wavelength oscillated by the LD is emitted. .

Next, a method and an apparatus for manufacturing an optical semiconductor module according to the present embodiment will be described with reference to FIG. First, in the same manner as described in Embodiment 2 with reference to FIG.
1, the optical multiplexer / demultiplexer 13 and the PD 17 are fixed. Next, L
D14 and the provisional positioning hole 32 formed in the Si substrate 16 are used to perform the provisional positioning step performed by observing the bright spot position of the scattered light in the dark-field image using the CCD camera.
After the relative position between the laser light 4 and the Si substrate 16 is roughly adjusted, the external laser light source 45 emits a laser beam having a shorter wavelength than the laser wavelength oscillated by the LD 14 (a laser beam having energy equal to or greater than the laser beam oscillated by the LD 14). The light enters the LD 14 from the optical fiber 11 through the optical multiplexer / demultiplexer 13.
The return light from the LD 14 is separated by a beam splitter 71 with an optical filter, and only the light 65 having the same wavelength as the laser wavelength oscillated by the LD 14 is extracted. While monitoring the intensity of the light 65 with the photodetector 72, the LD 14 is moved on the Si substrate 16 by holding the LD 14 by a collet (not shown) with a three-dimensional actuator, and the LD 14 is moved to the position where the light intensity becomes maximum. It is bonded to the substrate 16. In this way,
The optical axis 44 of each optical component can be aligned at high speed and with high accuracy.

In the third embodiment, the Si substrate 1
6, the case where the optical fiber 11, the optical multiplexer / demultiplexer 13 and the PD 17 are fixed in advance and the LD 14 is positioned and fixed in accordance with the optical axes of the optical fiber 11, the optical multiplexer / demultiplexer 13 and the PD 17 has been described. Since the principle described with reference to FIG. 5 also applies to the PD 17, the optical fiber 11, the optical multiplexer / demultiplexer 13, and the LD 14 are
6, and may be applied to the case where the PD 17 is positioned and fixed in accordance with the optical axes of the optical fiber 11, the optical multiplexer / demultiplexer 13, and the LD 14, and the same effect is obtained.
In FIG. 6, the positions of the LD 14 and the PD 17 may be reversed. Furthermore, L described in Embodiment 1
The present invention can be applied to the manufacture of a D module or a PD module.

[0048]

As described above, according to the first method for manufacturing an optical semiconductor module according to the present invention, a method for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. And fixing the optical fiber at a predetermined position on the substrate, and irradiating a laser beam having the same wavelength as the laser wavelength of the oscillation or detection of the diode from the optical fiber to the diode, A step of fixing the diode to the substrate at a position where the photocurrent detected from the substrate becomes maximum, so that the laser diode can be energized without transmitting infrared light through the optical components or the substrate, and without bonding to the substrate. Thus, high-precision optical axis alignment is possible without oscillating laser light.

According to a second method of manufacturing an optical semiconductor module according to the present invention, there is provided a method of manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. Fixing the optical fiber at a predetermined position on a substrate, and irradiating a laser beam having a wavelength shorter than the laser wavelength of the oscillation or detection of the diode from the optical fiber to the diode, and from the diode to the optical fiber. In the return light, a step of fixing the diode to the substrate at a position where the light intensity of the component corresponding to the oscillation of the diode or the laser wavelength to be detected is maximized, so that infrared light is transmitted through the optical component or the substrate. Even if the laser diode is not oscillated by energizing the laser diode without being bonded to the substrate, Alignment is possible.

Further, according to the third method of manufacturing an optical semiconductor module according to the present invention, a method of manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate. Fixing the optical fiber and the optical multiplexer / demultiplexer at a predetermined position on the substrate, and oscillating or detecting the diode with respect to a diode from the optical fiber through the optical multiplexer / demultiplexer. Including a laser beam of the same wavelength as the laser wavelength, and a step of fixing the diode to the substrate at a position where the photocurrent detected from the diode is maximized, so that infrared light does not pass through the optical components and the substrate. Even if the laser diode does not oscillate by energizing the laser diode without being bonded to the substrate, highly accurate optical axis alignment can be achieved.

Further, according to the fourth method for manufacturing an optical semiconductor module of the present invention, a method for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate. A step of fixing the optical fiber and the diode at a predetermined position on the substrate, and a laser wavelength at which the diode oscillates or is detected with respect to the diode from the optical fiber through the optical multiplexer / demultiplexer. Injecting laser light of the same wavelength and fixing the optical multiplexer / demultiplexer to the substrate at a position where the photocurrent detected from the diode is maximized, so that infrared light does not pass through the optical component or substrate. Even if the laser diode does not oscillate by energizing the laser diode without being bonded to the substrate, highly accurate optical axis alignment can be achieved.

According to a fifth method of manufacturing an optical semiconductor module according to the present invention, in any one of the first to fourth methods of manufacturing an optical semiconductor module, a laser is supplied from the optical fiber to the diode. Before the light is incident, a dark field image including the irregularities is photographed by irradiating laser light defocused on the irregularities for temporary positioning formed in advance at predetermined positions of the substrate and the optical multiplexer / demultiplexer or the diode. The method further includes the step of temporarily positioning the optical multiplexer / demultiplexer or the diode on the substrate so that each bright spot observed corresponding to each of the irregularities comes to a pre-registered position. The speed of the coarse positioning adjustment before the axis alignment can be increased, and the optical semiconductor module can be manufactured with high productivity.

According to the first apparatus for manufacturing an optical semiconductor module of the present invention, there is provided an apparatus for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. Means for injecting laser light from the optical fiber fixed on the substrate to the diode, means for detecting a photocurrent flowing through the diode, and means for holding the diode and enabling movement on the substrate Therefore, high-precision optical axis alignment can be achieved even if infrared light does not pass through the optical component or the substrate, and laser light is not oscillated by energizing the laser diode without being bonded to the substrate.

According to a second apparatus for manufacturing an optical semiconductor module according to the present invention, there is provided an apparatus for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate. Means for injecting laser light from the optical fiber fixed on the substrate to the diode, means for detecting the light intensity of the return light from the diode to the optical fiber, and moving on the substrate while holding the diode Highly accurate optical axis alignment is possible even if infrared light does not pass through the optical components and the substrate, and the laser diode does not oscillate by energizing the laser diode without bonding to the substrate. Becomes possible.

According to the third apparatus for manufacturing an optical semiconductor module of the present invention, the apparatus for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate. Means for injecting a laser beam from an optical fiber fixed on the substrate to the diode through the optical multiplexer / demultiplexer, means for detecting a photocurrent detected from the diode, and the optical multiplexer / demultiplexer. A means for holding the wave device or diode and making it movable on the substrate is provided, so that even if infrared light does not pass through the optical component or substrate, and the laser diode is energized without being bonded to the substrate, The optical axis can be aligned with high accuracy without oscillating the light.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining a method and an apparatus for manufacturing an optical semiconductor module according to a first embodiment of the present invention.

FIG. 2 is a diagram for explaining a method and an apparatus for manufacturing an optical semiconductor module according to the first embodiment of the present invention.

FIG. 3 is a diagram for explaining a method and an apparatus for manufacturing an optical semiconductor module according to the first embodiment of the present invention.

FIG. 4 is a diagram illustrating a method and an apparatus for manufacturing an optical semiconductor module according to a second embodiment of the present invention.

FIG. 5 is a diagram illustrating a method and an apparatus for manufacturing an optical semiconductor module according to a third embodiment of the present invention.

FIG. 6 is a diagram illustrating a method and an apparatus for manufacturing an optical semiconductor module according to a third embodiment of the present invention.

FIG. 7 is a perspective view showing an example of the internal structure of a conventional optical transceiver module.

FIG. 8 is a perspective view showing an example of an internal structure of an optical transceiver module that does not require an optical waveguide lens.

FIG. 9 is a conceptual diagram illustrating an optical component precision positioning method according to Prior Art 1.

FIG. 10 is a perspective view illustrating a method for manufacturing an optical coupling device according to Conventional Technique 3.

[Explanation of symbols]

REFERENCE SIGNS LIST 11 optical fiber, 11 a ferrule, 12 waveguide lens, 13 optical multiplexer / demultiplexer, 14 LD, 15 monitor PD, 16 Si substrate, 17 PD, 18 V groove for fixing optical fiber, 31 Si cover, 32 hole for temporary positioning 33, metal wiring pattern and gold / tin solder layer, 33a
Metal wiring pattern, 33b gold / tin solder layer, 34 CC
D camera, 35 laser light source, 36 laser beam, 37
Lens, 38 defocused laser light, 41
Electrode for photocurrent measurement, 42 ammeter, 43 collet with three-dimensional actuator, 44 optical axis, 45 laser light source, 61 holes in valence band, 62 electron band in cladding layer, 63 electron band in active layer, 64 Conductor electrons, return light having the same wavelength as the laser wavelength oscillated by 65 LD, 66 incident laser light, 67 electron band of cladding layer, 71 beam splitter, 72 photodetector, 81
Optical circuit board, 82 Optical component, 83 Waveguide structure of optical component 82, 84 Waveguide structure of optical circuit board 81, 85
Observation device, 86 control device, 87 light source, 88 condenser lens, 89 manipulator, 111 optical fiber,
112 Substrate, 113 LD, 114 Light emitting part of LD 113, 115 Second cut for LD mounting positioning, 1
16 V-groove for fixing optical fiber, 117 first cut for abutting fiber end face, 118 lens, 119L
D Third notch for mounting positioning.

Claims (8)

[The claims] 1. A method for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, the method comprising: fixing the optical fiber at a predetermined position on the substrate; A step of injecting a laser beam having the same wavelength as the laser wavelength of the oscillation or detection of the diode from the fiber into the diode, and fixing the diode to the substrate at a position where the photocurrent detected from the diode is maximized. A method for manufacturing an optical semiconductor module, comprising: 2. A method for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, the method comprising: fixing the optical fiber at a predetermined position on the substrate; Laser light having a wavelength shorter than the laser wavelength of the oscillation or detection of the diode is incident on the diode from the fiber, and the return light from the diode to the optical fiber corresponds to the laser wavelength of the oscillation or detection of the diode. A method for manufacturing an optical semiconductor module, comprising a step of fixing the diode to the substrate at a position where the light intensity of the component is maximum. 3. A method for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, wherein the optical fiber and the optical coupling device are located at predetermined positions on the substrate. A step of fixing the duplexer, and laser light having the same wavelength as the laser wavelength to be oscillated or detected by the diode from the optical fiber to the diode through the optical multiplexer / demultiplexer is detected from the diode. A step of fixing the diode to the substrate at a position where the photocurrent is maximized. 4. A method for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, wherein the optical fiber and the diode are provided at predetermined positions on the substrate. And the step of fixing, and the laser beam of the same wavelength as the laser wavelength of the oscillation or detection of the diode is incident on the diode from the optical fiber through the optical multiplexer / demultiplexer, and the photocurrent detected from the diode Fixing the optical multiplexer / demultiplexer to the substrate at a position where the maximum value is obtained. 5. The method for manufacturing an optical semiconductor module according to claim 1, wherein the substrate and the optical multiplexer / demultiplexer or the optical multiplexer / demultiplexer before the laser light is incident on the diode from the optical fiber. Each of the bright spots observed corresponding to each of the irregularities is obtained by irradiating a laser beam defocused on the irregularities for provisional positioning formed in advance at a predetermined position with the diode to capture a dark field image including the irregularities. And a step of temporarily positioning the optical multiplexer / demultiplexer or the diode on the substrate such that the optical multiplexer / demultiplexer comes to a position registered in advance. 6. An apparatus for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, wherein laser light is emitted from the optical fiber fixed on the substrate to the diode. An apparatus for manufacturing an optical semiconductor module, comprising: means for incident light; means for detecting a photocurrent flowing through the diode; and means for holding the diode and making it movable on the substrate. 7. An apparatus for manufacturing an optical semiconductor module in which an optical fiber and a laser diode or a photodiode are fixed on a substrate, wherein laser light is emitted from the optical fiber fixed on the substrate to the diode. Manufacturing an optical semiconductor module, comprising: means for inputting light; means for detecting the light intensity of return light from the diode to the optical fiber; and means for holding the diode and making it movable on the substrate. apparatus. 8. An apparatus for manufacturing an optical semiconductor module in which an optical fiber, an optical multiplexer / demultiplexer, and a laser diode or a photodiode are fixed on a substrate, wherein the optical coupling / demultiplexing is performed from the optical fiber fixed on the substrate. Means for injecting laser light into the diode through a wave divider, means for detecting a photocurrent detected from the diode, and means for holding the optical multiplexer / demultiplexer or the diode so as to be movable on the substrate An optical semiconductor module manufacturing apparatus, comprising: