JP2002198182A - Organic el element - Google Patents
Organic el elementInfo
- Publication number
- JP2002198182A JP2002198182A JP2000393169A JP2000393169A JP2002198182A JP 2002198182 A JP2002198182 A JP 2002198182A JP 2000393169 A JP2000393169 A JP 2000393169A JP 2000393169 A JP2000393169 A JP 2000393169A JP 2002198182 A JP2002198182 A JP 2002198182A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- layer
- hole injection
- anode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 68
- 238000002347 injection Methods 0.000 claims abstract description 43
- 239000007924 injection Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 239000012044 organic layer Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 13
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000005525 hole transport Effects 0.000 abstract description 7
- 238000004020 luminiscence type Methods 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000001459 lithography Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000010405 anode material Substances 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
- -1 8-quinolinol aluminum Chemical compound 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- ADUFDSSCDCLUFT-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 ADUFDSSCDCLUFT-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光層に有機化合
物からなる有機層を用いた有機ＥＬ（エレクトロルミネ
センス）素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL (electroluminescence) element using an organic layer made of an organic compound for a light emitting layer.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は自己発光するため視認性
が高く、かつ完全な固体であるため耐衝撃性に優れるな
どの利点を有し、各種の表示装置における発光素子とし
ての利用が期待されている。2. Description of the Related Art Organic EL elements have advantages such as high visibility because they emit light by themselves, and excellent impact resistance because they are completely solid, and are expected to be used as light emitting elements in various display devices. ing.
【０００３】有機ＥＬ素子は、基本的には有機発光層を
一対の電極で挟んで構成され、陰極から注入された電子
と陽極から注入された正孔が、発光層内で結合するとき
に発光するものである。したがって、陰極側へ光を取り
出す上面発光素子の場合、基板上に陽極、発光層を含む
有機層、光透過性の陰極が順に積層されて構成される。[0003] An organic EL element is basically constituted by sandwiching an organic light emitting layer between a pair of electrodes, and emits light when electrons injected from a cathode and holes injected from an anode are combined in the light emitting layer. Is what you do. Therefore, in the case of a top light emitting element that extracts light to the cathode side, an anode, an organic layer including a light emitting layer, and a light transmissive cathode are sequentially laminated on a substrate.
【０００４】このような上面発光素子では、陽極材料に
求められる特性としては正孔の注入効率に関与する仕事
関数と陰極側へ発光を反射する反射率がある。有機層へ
の正孔の注入効率が大きいと、より低い電界で正孔電流
を増大させることができ、発光効率の高い有機ＥＬ素子
を得ることができる。陽極から有機層への正孔の注入効
率は、有機層に接する陽極の仕事関数が大きいほど高効
率となるため、陽極材料としては仕事関数の大きいもの
がよいと考えられてきた。光反射性を有し仕事関数のよ
り大きい電極材料としては、ニッケル、金、白金等が挙
げられる。[0004] In such a top-surface light emitting device, characteristics required for the anode material include a work function related to hole injection efficiency and a reflectivity for reflecting light emission to the cathode side. When the efficiency of injecting holes into the organic layer is high, the hole current can be increased at a lower electric field, and an organic EL device having high luminous efficiency can be obtained. Since the efficiency of hole injection from the anode to the organic layer increases as the work function of the anode in contact with the organic layer increases, it has been considered that a material having a large work function is preferable as the anode material. Nickel, gold, platinum, and the like can be given as examples of the electrode material having light reflectivity and a higher work function.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、金や白
金は、有機ＥＬディスプレイを作製するために必要なリ
ソグラフィなどの微細加工に適せず、上面発光素子の陽
極として用いることが難しいという問題があった。ま
た、金は可視光領域で反射率が大きく変わるため、上面
発光素子の陽極として用いると、有機層での発光スペク
トルを変化させてしまうという問題があった。However, gold and platinum are not suitable for fine processing such as lithography necessary for manufacturing an organic EL display, and have a problem that it is difficult to use them as an anode of a top emission device. Was. In addition, since the reflectance of gold greatly changes in the visible light region, when used as an anode of a top emission element, there is a problem that the emission spectrum of the organic layer is changed.
【０００６】本発明は、かかる点に対処してなされたも
ので、有機層への正孔の注入効率が高くかつ上面発光素
子として反射による可視光領域の発光スペクトルの変化
の少ない、発光特性に優れた有機ＥＬ素子を提供するこ
とを目的とする。The present invention has been made in view of such a point, and has a high emission efficiency of holes into an organic layer and a small emission characteristic of a visible light region due to reflection as a top emission element. An object is to provide an excellent organic EL device.
【０００７】[0007]
【課題を解決するための手段】すなわち、請求項１の発
明は、陽極と陰極の間に一層以上の有機層を有する有機
ＥＬ素子において、陽極と有機層の間に陽極よりも仕事
関数の大きい正孔注入用薄膜層を有することを特徴とす
る。この発明においては、陽極と有機層の間に陽極のよ
うにリソグラフィなどの微細加工の必要のない正孔注入
用薄膜層を設けて、これを陽極より仕事関数の大きい材
料で形成することにより、有機層への正孔の注入効率を
高めることができ、有機ＥＬ素子の電流−電圧特性を向
上させることが可能となる。That is, according to the first aspect of the present invention, in an organic EL device having one or more organic layers between an anode and a cathode, the work function between the anode and the organic layer is larger than that of the anode. It has a hole injection thin film layer. In the present invention, by providing a thin film layer for hole injection that does not require fine processing such as lithography between the anode and the organic layer like the anode, by forming this with a material having a larger work function than the anode, The efficiency of injecting holes into the organic layer can be increased, and the current-voltage characteristics of the organic EL element can be improved.
【０００８】請求項２の発明は、請求項１の有機ＥＬ素
子において、正孔注入用薄膜層の膜厚が１〜１０ｎｍの
範囲内であることを特徴とする。正孔注入用薄膜層の膜
厚を１〜１０ｎｍと非常に薄くすることで、可視光領域
で反射率が大きく変わる金属材料でも、有機層の発光ス
ペクトルをほとんど変えることなく使用することができ
る。According to a second aspect of the present invention, in the organic EL device of the first aspect, the thickness of the hole injection thin film layer is in the range of 1 to 10 nm. By making the thickness of the hole injecting thin film layer as extremely thin as 1 to 10 nm, even a metal material whose reflectance largely changes in the visible light region can be used without substantially changing the emission spectrum of the organic layer.
【０００９】請求項３の発明は、請求項１の有機ＥＬ素
子において、正孔注入用薄膜層が陽極上に蒸着法により
成膜されてなることを特徴とする。正孔注入用薄膜層は
蒸着法により成膜可能なため、リソグラフィなどの微細
加工に適さない材料でも、仕事関数の観点から任意に用
いることができる。According to a third aspect of the present invention, in the organic EL device of the first aspect, the hole injection thin film layer is formed on the anode by a vapor deposition method. Since the hole injecting thin film layer can be formed by a vapor deposition method, a material that is not suitable for fine processing such as lithography can be arbitrarily used from the viewpoint of a work function.
【００１０】請求項４の発明は、請求項１の有機ＥＬ素
子において、有機層が正孔注入用薄膜層を覆うようによ
り大きい形状に蒸着法により成膜されてなることを特徴
とする。正孔注入用薄膜層の形成に用いたマスクより大
きいマスクで有機層を成膜することで、容易に正孔注入
用薄膜層より形状の大きな有機層を正孔注入用薄膜層上
に積層することができ、これにより正孔注入用薄膜層と
陰極との短絡を防ぐことができる。According to a fourth aspect of the present invention, in the organic EL device of the first aspect, the organic layer is formed by a vapor deposition method so as to cover the thin film layer for hole injection. By forming an organic layer using a mask larger than the mask used for forming the hole injection thin film layer, an organic layer having a shape larger than the hole injection thin film layer can be easily laminated on the hole injection thin film layer. This can prevent a short circuit between the hole injection thin film layer and the cathode.
【００１１】[0011]
【発明の実施の形態】以下、図面に基づいて本発明の実
施の形態を説明する。図１〜３は、本発明の一実施の形
態の有機ＥＬ素子の製造工程を示すもので、図３に最終
的な構成が示されている。図３において、本発明の一実
施の形態の有機ＥＬ素子は、ガラス等の絶縁性の基板１
と、光反射性の陽極２と、発光領域を分離する絶縁膜３
と、有機層へ正孔をより多く注入するための正孔注入用
薄膜層４と、正孔注入層５、正孔輸送層６及び発光層７
の３層の有機層と、光透過性の陰極８が順次積層されて
構成されている。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show a manufacturing process of an organic EL device according to an embodiment of the present invention, and FIG. 3 shows a final configuration. In FIG. 3, an organic EL element according to one embodiment of the present invention is an insulating substrate 1 made of glass or the like.
And a light-reflective anode 2 and an insulating film 3 for separating a light emitting region
A hole injection thin film layer 4 for injecting more holes into the organic layer, a hole injection layer 5, a hole transport layer 6, and a light emitting layer 7.
, And a light-transmissive cathode 8 are sequentially laminated.
【００１２】上記構成において、基板１上にまず陽極２
が形成される。陽極２の材料としては、例えばＣｒのよ
うに、仕事関数が比較的大きい導電性材料のうち微細加
工が容易でかつ可視光領域で反射率のほぼ一定したもの
が用いられる。陽極２は、基板１上に陽極材料をスパッ
タ法等により成膜し、リソグラフィ等により所定の形状
にエッチングして形成される。In the above structure, the anode 2 is first placed on the substrate 1.
Is formed. As a material of the anode 2, for example, a conductive material having a relatively large work function, such as Cr, which can be easily microprocessed and has a substantially constant reflectance in a visible light region is used. The anode 2 is formed by forming a film of an anode material on the substrate 1 by a sputtering method or the like and etching the anode material into a predetermined shape by lithography or the like.
【００１３】この所定の形状に加工された陽極２上に、
例えばＳｉＯ2 のような絶縁膜３がＣＶＤ法等により成
膜され、リゾグラフィ等により発光素子の発光部分とな
る領域の陽極２が露出するよう絶縁膜３の開口が行われ
る。On the anode 2 processed into the predetermined shape,
For example, an insulating film 3 such as SiO 2 is formed by a CVD method or the like, and an opening of the insulating film 3 is made by lithography or the like so that the anode 2 in a region to be a light emitting portion of the light emitting element is exposed.
【００１４】上記のようにして陽極２及び絶縁膜３が所
定の形状に形成された基板１上に、金等の仕事関数が陽
極２よりも大きい金属材料を用いて正孔注入用薄膜層４
が約１〜１０ｎｍの範囲の膜厚に成膜される。その際、
陽極２が露出した部分を中心にして、絶縁膜３の開口部
分よりひとまわり大きい開口部分を持つマスク９を用い
て、抵抗加熱法や電子ビーム蒸着法等の真空蒸着法など
により正孔注入用薄膜層４の成膜が行われる。On the substrate 1 on which the anode 2 and the insulating film 3 are formed in a predetermined shape as described above, a metal material such as gold having a work function larger than that of the anode 2 is used.
Is formed into a film thickness in the range of about 1 to 10 nm. that time,
Using a mask 9 having an opening part slightly larger than the opening part of the insulating film 3 around the part where the anode 2 is exposed, holes are injected by a vacuum evaporation method such as a resistance heating method or an electron beam evaporation method. The thin film layer 4 is formed.
【００１５】次に、上記正孔注入用薄膜層４の上に、正
孔注入用薄膜層４の形成に用いたマスク９よりも開口部
分がひとまわり大きいマスク１０を用いて、正孔注入層
５、正孔輸送層６及び発光層７の各有機層と陰極８が真
空蒸着法等にて成膜される。正孔注入層５、正孔輸送層
６及び発光層７はすでに公知のもので、例えば正孔注入
層５としては、４、４′、４″−トリス（３−メチルフ
ェニルフェニルアミノ）トリフェニルアミン（以下、Ｍ
ＴＤＡＴＡという。）等を、正孔輸送層６としては、ビ
ス（Ｎ−ナフチル）−Ｎ−フェニルベンジジン（以下、
α−ＮＰＤという。）等を、発光層７としては、８−キ
ノリノ−ルアルミニウム錯体（以下、Ａｌｑという。）
等を用いることができる。また、陰極８の材料として
は、透明な導電性材料が好ましい。Next, a hole injection layer is formed on the hole injection thin film layer 4 by using a mask 10 having an opening part larger than the mask 9 used for forming the hole injection thin film layer 4. 5, the respective organic layers of the hole transport layer 6 and the light emitting layer 7 and the cathode 8 are formed by a vacuum deposition method or the like. The hole injection layer 5, the hole transport layer 6, and the light emitting layer 7 are already known. For example, as the hole injection layer 5, 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenyl Amine (hereinafter referred to as M
It is called TDATA. ) And the like as the hole transport layer 6, as bis (N-naphthyl) -N-phenylbenzidine (hereinafter, referred to as
It is called α-NPD. ) And the like as the light-emitting layer 7, an 8-quinolinol aluminum complex (hereinafter referred to as Alq).
Etc. can be used. Further, as the material of the cathode 8, a transparent conductive material is preferable.
【００１６】上記の説明からも明らかなように、本実施
の形態においては、微細加工された陽極の上に陽極より
も仕事関数の大きい材料からなる膜厚の薄い正孔注入用
薄膜層を設けることにより、正孔注入用薄膜層によって
有機層への正孔の注入効率を高めることができ、これに
よりより低い電界で正孔電流を増大させることができ、
電流−電圧特性の向上を図ることができる。As is clear from the above description, in this embodiment, a thin hole injection thin film layer made of a material having a larger work function than the anode is provided on the finely processed anode. With this, the hole injection efficiency to the organic layer can be increased by the hole injection thin film layer, whereby the hole current can be increased at a lower electric field,
The current-voltage characteristics can be improved.
【００１７】また、正孔注入用薄膜層を有機層を成膜す
る直前に蒸着により成膜することができるので、金や白
金等のリソグラフィ等の微細加工に適さない材料を正孔
注入用薄膜層に用いることができる。さらに、正孔注入
用薄膜層の膜厚を１〜１０ｎｍ程度と非常に薄くしてい
るので、金のように可視光領域に反射率が大きく変化す
る材料でも、有機層の発光スペクトルをほとんど変えな
いため、正孔注入用薄膜層に用いることができる。さら
にまた、有機層の成膜を正孔注入用薄膜層の成膜よりも
大きな形状に行うことにより、正孔注入用薄膜層と陰極
との短絡を防ぐことができる。Further, since the hole injection thin film layer can be formed by evaporation immediately before forming the organic layer, a material such as gold or platinum which is not suitable for fine processing such as lithography is used. Can be used for layers. Further, since the thickness of the thin film layer for hole injection is extremely thin, about 1 to 10 nm, the emission spectrum of the organic layer is hardly changed even for a material such as gold whose reflectance greatly changes in the visible light region. Therefore, it can be used for a hole injection thin film layer. Furthermore, by forming the organic layer into a shape larger than that of the hole injection thin film layer, a short circuit between the hole injection thin film layer and the cathode can be prevented.
【００１８】なお、本発明は上記実施の形態に限らず、
各層の材料及び成膜方法は例示されたものに限定されな
い。また、絶縁膜３は必要不可欠なものではない。さら
に、有機層は発光層７を含む他の構成をとることもでき
る。The present invention is not limited to the above embodiment,
The material of each layer and the film forming method are not limited to those illustrated. Further, the insulating film 3 is not indispensable. Further, the organic layer may have another configuration including the light emitting layer 7.
【００１９】[0019]
【実施例】次に、本発明を実施例によりさらに詳細に説
明する。ガラス基板に陽極としてＣｒをスパッタ法にて
２００ｎｍ成膜し、通常のリソグラフィによって所定の
形状にエッチングした。この所定の形状に加工されたＣ
ｒ上に絶縁膜としてＳｉＯ2 をＣＶＤ法により６００ｎ
ｍ成膜し、リソグラフィにより有機ＥＬ素子の発光部分
となる部分のＳｉＯ2 を除去した。Next, the present invention will be described in more detail with reference to examples. A 200 nm Cr film was formed as an anode on a glass substrate by a sputtering method, and etched into a predetermined shape by ordinary lithography. C processed into this predetermined shape
SiO 2 as an insulating film on the substrate 600 by CVD method
m was formed, and SiO 2 was removed by lithography from the light emitting portion of the organic EL element.
【００２０】ついで、陽極の露出部分よりもひとわり大
きい開口部分を持つメタルマスクを用いて、露出してい
る陽極及びその周囲の絶縁膜上に金を抵抗加熱法により
真空蒸着により１ｎｍ程度成膜し、正孔注入用薄膜層を
形成した。その際、蒸着用ボートに金を１ｇ程度充填
し、真空蒸着器に入れ、１０-4Ｐａ以上の真空度にて蒸
着用ボートに電圧を印加し、抵抗加熱法で１ｎｍ蒸着し
た。Then, using a metal mask having an opening part slightly larger than the exposed part of the anode, gold is deposited to a thickness of about 1 nm on the exposed anode and the insulating film around the exposed anode by vacuum evaporation by resistance heating. Then, a thin film layer for hole injection was formed. At this time, about 1 g of gold was filled in the evaporation boat, put in a vacuum evaporation apparatus, a voltage was applied to the evaporation boat at a degree of vacuum of 10 −4 Pa or more, and 1 nm was evaporated by a resistance heating method.
【００２１】ついで、正孔注入用薄膜層の金を蒸着した
ときに用いたマスクよりもひとまわり開口部の大きいメ
タルマスクを用いて、正孔注入層、正孔輸送層及び発光
層の各有機層と陰極を真空蒸着法により順次成膜した。
なお、正孔注入層としてＭＴＤＡＴＡ、正孔輸送層とし
てα−ＮＰＤ、発光層としてＡｌｑ、陰極としてマグネ
シウムと銀の合金（Ｍｇ：Ａｇ）をそれぞれ用いた。真
空蒸着法により成膜するにあたって、有機材料はそれぞ
れ０．２ｇ程度蒸着用ボートに充填し、Ｍｇは０．１ｇ
程度、Ａｇは０．４ｇ程度同様に蒸着用ボートに充填
し、真空蒸着器内の電極に取り付けた。そして、真空度
１０-4Ｐａ以上で順次蒸着用ボートに電圧を印加して蒸
着を行った。有機層の膜厚は、ＭＴＤＡＴＡ、α−ＮＰ
Ｄ、Ａｌｑをそれぞれ３０ｎｍ、３０ｎｍ、６０ｎｍと
し、Ｍｇ：Ａｇは蒸着レートを制御し、ＭｇとＡｇの混
合比が９：１になるようにして１０ｎｍ成膜した。この
ようにして製作された有機ＥＬ素子は、電流−電圧特性
に優れ、発光特性の向上が認められた。Then, using a metal mask having a larger opening than the mask used when depositing the gold of the hole injecting thin film layer, the respective organic layers of the hole injecting layer, the hole transporting layer, and the light emitting layer are used. The layer and the cathode were sequentially formed by a vacuum evaporation method.
Note that MTDATA was used as a hole injection layer, α-NPD was used as a hole transport layer, Alq was used as a light emitting layer, and an alloy of magnesium and silver (Mg: Ag) was used as a cathode. In forming a film by the vacuum deposition method, each of the organic materials is filled into a boat for vapor deposition in an amount of about 0.2 g, and 0.1 g of Mg
Similarly, about 0.4 g of Ag was charged into a vapor deposition boat and attached to an electrode in a vacuum vaporizer. Then, a voltage was sequentially applied to the evaporation boat at a degree of vacuum of 10 −4 Pa or more to perform evaporation. The thickness of the organic layer is MTDATA, α-NP
D and Alq were 30 nm, 30 nm, and 60 nm, respectively, and a 10 nm film was formed by controlling the deposition rate of Mg: Ag so that the mixing ratio of Mg and Ag became 9: 1. The organic EL device manufactured in this manner was excellent in current-voltage characteristics, and improvement in light emission characteristics was recognized.
【００２２】[0022]
【発明の効果】上述したように、請求項１の発明によれ
ば、陽極より仕事関数の大きい正孔注入用薄膜層を陽極
と有機層の間に設けることにより、有機層への正孔の注
入効率を高めることができ、電流−電圧特性に優れた有
機ＥＬ素子を達成することができる。As described above, according to the first aspect of the present invention, the hole injection thin film layer having a larger work function than the anode is provided between the anode and the organic layer, so that holes can be injected into the organic layer. The injection efficiency can be improved, and an organic EL device having excellent current-voltage characteristics can be achieved.
【００２３】請求項２の発明によれば、正孔注入用薄膜
層の膜厚を１〜１０ｎｍとすることで、可視光領域で反
射率が大きく変わる材料でも、有機層の発光スペクトル
を変化させることなく、使用することができる。According to the second aspect of the present invention, by setting the thickness of the thin film layer for hole injection to 1 to 10 nm, the emission spectrum of the organic layer can be changed even for a material whose reflectance greatly changes in the visible light region. Can be used without.
【００２４】請求項３の発明によれば、正孔注入用薄膜
層を蒸着法により陽極上に形成することにより、リソグ
ラフィなどの微細加工に適さない材料でも、正孔注入用
薄膜層に用いることができる。According to the third aspect of the present invention, the hole injection thin film layer is formed on the anode by a vapor deposition method, so that even a material which is not suitable for fine processing such as lithography can be used for the hole injection thin film layer. Can be.
【００２５】請求項４の発明によれば、有機層を正孔注
入用薄膜層を覆うようにより大きい形状に蒸着法により
成膜することにより、正孔注入用薄膜層と陰極との短絡
を防ぐことができる。According to the fourth aspect of the present invention, a short circuit between the hole injection thin film layer and the cathode is prevented by forming the organic layer in a larger shape so as to cover the hole injection thin film layer by vapor deposition. be able to.
【図１】本発明の一実施の形態の有機ＥＬ素子の製造工
程（その１）を示す断面図である。FIG. 1 is a cross-sectional view illustrating a manufacturing process (part 1) of an organic EL device according to an embodiment of the present invention.
【図２】本発明の一実施の形態の有機ＥＬ素子の製造工
程（その２）を示す断面図である。FIG. 2 is a cross-sectional view showing a manufacturing process (part 2) of the organic EL device according to one embodiment of the present invention.
【図３】本発明の一実施の形態の有機ＥＬ素子を示す断
面図である。FIG. 3 is a cross-sectional view showing an organic EL device according to one embodiment of the present invention.
１……基板、２……陽極、３……絶縁膜、４……正孔注
入用薄膜層、５……正孔注入層、６……正孔輸送層、７
……発光層、８……陰極、９、１０……マスクDESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... anode, 3 ... insulating film, 4 ... hole injection thin film layer, 5 ... hole injection layer, 6 ... hole transport layer, 7
… Emitting layer, 8… Cathode, 9, 10… Mask
Claims (4)
する有機ＥＬ素子において、前記陽極と有機層の間に陽
極よりも仕事関数の大きい正孔注入用薄膜層を有するこ
とを特徴とする有機ＥＬ素子。1. An organic EL device having one or more organic layers between an anode and a cathode, characterized in that a hole injection thin film layer having a larger work function than the anode is provided between the anode and the organic layer. Organic EL device.
ｎｍの範囲内であることを特徴とする請求項１記載の有
機ＥＬ素子。2. The method of claim 1, wherein the thickness of the hole injection thin film layer is 1 to 10
2. The organic EL device according to claim 1, wherein the value is in the range of nm.
着法により成膜されてなることを特徴とする請求項１記
載の有機ＥＬ素子。3. The organic EL device according to claim 1, wherein the hole injection thin film layer is formed on the anode by a vapor deposition method.
うようにより大きい形状に蒸着法により成膜されてなる
ことを特徴とする請求項３記載の有機ＥＬ素子。4. The organic EL device according to claim 3, wherein the organic layer is formed in a larger shape by a vapor deposition method so as to cover the hole injection thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000393169A JP2002198182A (en) | 2000-12-25 | 2000-12-25 | Organic el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000393169A JP2002198182A (en) | 2000-12-25 | 2000-12-25 | Organic el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002198182A true JP2002198182A (en) | 2002-07-12 |
Family
ID=18859031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000393169A Pending JP2002198182A (en) | 2000-12-25 | 2000-12-25 | Organic el element |
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