JP2002190437A - Electron beam exposure system and calibration method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To appropriately and speedily calibrate the irradiation position of an electron beam. SOLUTION: This electron beam exposure system exposes a pattern on a wafer by an electron beam, and has a wafer stage 152 and an electron beam generating section for generating the electron beam. In the water stage 152, a member 206 for calibration is provided. The member 206 for calibration has a substrate 208, a mark section 210 that has a plurality of conducive members arranged at intervals narrower than the diameter of the electron beam on the substrate 208, a plurality of wiring each connected to the plurality of conductive members are generated by the irradiation of the electron beam, and outputs the current value of a current flowing in the plurality of the conductive members to the external measurement section, and a bump section 222.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam and a method for calibrating an irradiation position of the electron beam.

[0002]

2. Description of the Related Art Conventionally, an electron beam exposure apparatus for exposing a pattern on a wafer by an electron beam has been known. 2. Description of the Related Art A conventional electron beam exposure apparatus deflects an electron beam by a deflector to irradiate a predetermined region of a wafer with the electron beam.
In order to irradiate a desired position on the wafer with the electron beam, it is necessary to correct the irradiation position of the electron beam in advance.

FIG. 1 shows a calibration member 12 in a conventional electron beam exposure apparatus 10. The calibration member 12 includes a mark 16 provided on the wafer stage 14 and a mark 1 when the mark 16 is irradiated with an electron beam.
And a detector 18 for detecting electrons radiated or scattered from the detector 6. The electron beam exposure apparatus 10 deflects the electron beam by the deflector 20 and causes the mark section 16 to scan the electron beam. The detector 18 detects electrons scattered from the mark 16 when the mark 16 is irradiated with an electron beam. The electron beam exposure apparatus 10 detects the position of the edge from the timing at which the electron beam scans the edge of the mark section 16 and calibrates the irradiation position of the electron beam.

[0004]

However, in the conventional electron beam exposure apparatus, the detecting section 18 detects the electrons scattered from the mark section 16 and thus needs to correct the irradiation positions of a plurality of electron beams. However, it is necessary to perform calibration one by one for each electron beam, which takes a long time.

Accordingly, an object of the present invention is to provide an electron beam exposure apparatus and a calibration member which can solve the above problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0006]

According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: a wafer stage;
An electron beam generating section for generating an electron beam, a mark section having a plurality of conductive members arranged at a distance smaller than the diameter of the electron beam on a wafer stage, and a plurality of conductive sections generated by irradiation of the electron beam. An electron beam exposure apparatus comprising: a measurement unit that measures a current value of a current flowing through a member.

[0007] The mark portion may have three or more conductive members, and any one of the three or more conductive members and the other conductive member are spaced at a distance smaller than the diameter of the electron beam. They may be arranged separately.

[0008] The electron beam exposure apparatus may further include a detection control unit for detecting an irradiation position of the electron beam based on a plurality of current values measured by the measurement unit. The electron beam exposure apparatus may further include a deflecting unit that deflects the electron beam, and the detection control unit controls the deflecting unit according to the irradiation position detected by the detecting unit to deflect the electron beam. Good.

[0009] The detection control section may calibrate the deflection of the electron beam at a position where the electron beam is irradiated to all of the plurality of conductive members. The electron beam exposure apparatus may further include a storage unit that stores a current value detected from each of the plurality of conductive members when the irradiation position of the electron beam does not shift,
The detection control unit controls the deflection unit so that the current value of the current flowing through the plurality of conductive members measured by the measurement unit is substantially equal to the current value stored in the storage unit, and deflects the electron beam. May be.

The deflecting section may have a plurality of deflecting electrodes provided corresponding to the plurality of conductive members, respectively. The mark portion may be larger than a range that can be irradiated with the electron beam when the electron beam is deflected by the deflection portion.

[0011] The electron beam exposure apparatus may further include a high resistance layer having a resistivity higher than the resistivity of the conductive member, and the mark portion may be formed on the high resistance layer. The electron beam exposure apparatus may further include a plurality of electron beam generation units and a plurality of mark units corresponding to the plurality of electron beam generation units, and the measurement unit may include an electron beam from each of the plurality of electron beam generation units. Of the current flowing through the plurality of conductive members of each of the plurality of mark portions may be measured. The arrangement interval of the mark portions may be equal to the electron beam interval.

According to a second aspect of the present invention, there is provided a calibration member for calibrating the deflection of an electron beam by a deflecting unit in an electron beam exposure apparatus, wherein the substrate and the substrate have a diameter smaller than the diameter of the electron beam. A mark portion having a plurality of conductive members arranged at intervals and connected to the plurality of conductive members respectively, and a current value of a current generated by electron beam irradiation and flowing through each of the plurality of conductive members is measured by an external measuring unit. And a wiring section having a plurality of wirings for outputting the signals to the calibration member.

[0013] The mark portion may have three or more conductive members, and any one of the three conductive members and the other conductive member are separated by a distance smaller than the diameter of the electron beam. It may be arranged.

[0014] The electron beam exposure apparatus may further include a high-resistance layer having a resistivity higher than the resistivity of the conductive member, and the mark portion may be formed on the high-resistance layer. The electron beam exposure apparatus may further include a plurality of mark portions, and an arrangement interval of the mark portions may be equal to an electron beam interval.

According to a third aspect of the present invention, there is provided a method of calibrating an irradiation position of an electron beam in an electron beam exposure apparatus, wherein the electron beam exposure apparatus has a wafer stage and a wafer stage which are larger than the diameter of the electron beam. A step of generating an electron beam, having a mark portion having a plurality of conductive members arranged at a small interval, and measuring a current value of a current generated by irradiation of the electron beam and flowing through the plurality of conductive members, respectively. And a calibration step.

The calibration method may further include a step of detecting an irradiation position of the electron beam based on the measured current value. The calibration method may further include a step of deflecting the electron beam according to the measured irradiation position of the electron beam.

The above summary of the present invention does not list all of the necessary features of the present invention, and a sub-combination of these features may also be an invention.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and are described in the embodiments. Not all combinations of features are essential to the solution of the invention.

FIG. 2 shows the configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 102 for performing a predetermined exposure process on a wafer 150 by an electron beam, and a control system 160 for controlling the operation of each component included in the exposure unit 102.

The exposure unit 102 generates a plurality of electron beams inside the casing 104 and irradiates the wafer 150 with the electron beam shaping means 110 for shaping the cross-sectional shape of the electron beam as desired. There is provided an electron beam switching unit 130 for independently switching whether or not each of the electron beams, and an electron optical system including a wafer projection system 140 for adjusting the direction and size of the image of the pattern transferred to the wafer 150. Also,
The exposure unit 102 includes a wafer stage 152 on which a calibration member 206 for calibrating the deflection of the electron beam by the wafer 150 or the deflection unit 146 is mounted.
And a stage system including a wafer stage drive unit 154 for driving the wafer stage 2. The calibration member 206 includes a substrate, a mark portion having a plurality of conductive members arranged on the substrate at a distance smaller than the diameter of the electron beam, and a wiring having a plurality of wirings respectively connected to the plurality of conductive members. And a part. The exposure unit 102 further includes a clamp member 200 connected to the wiring unit of the calibration member 206.

The electron beam shaping means 110 includes a plurality of electron guns 112 for generating a plurality of electron beams, and a first shaping member having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beam. 114 and the second shaping member 122 and the first multi-axis electron lens 1 for independently converging a plurality of electron beams and adjusting the focus of the electron beams
16 and a first shaping / deflecting unit 118 and a second shaping / deflecting unit 120 for independently deflecting a plurality of electron beams passing through the first shaping member 114.

The irradiation switching means 130 independently converges the plurality of electron beams and adjusts the focus of the electron beams, and deflects the plurality of electron beams independently for each electron beam. Accordingly, a blanking electrode array 134 for independently switching whether or not to irradiate the electron beam on the wafer 150 for each electron beam, and a plurality of openings for passing the electron beam, are deflected by the blanking electrode array 134. An electron beam shielding member 136 for shielding the electron beam. In another example, blanking electrode array 134 may be a blanking aperture array device.

The wafer projection system 140 independently focuses a plurality of electron beams and reduces the irradiation diameter of the electron beams.
A multi-axis electron lens 142, a fourth multi-axis electron lens 144 for independently converging a plurality of electron beams and adjusting the focus of the electron beam, and a plurality of electron beams at desired positions on the wafer 150 146 that deflects light independently
And a fifth multi-axis electron lens 1 that functions as an objective lens for the wafer 150 and converges a plurality of electron beams independently.
48. The deflecting unit 146 includes a plurality of deflectors. Each deflector has a plurality of deflection electrodes.

The control system 160 includes an overall control unit 170 and an individual control unit 180. The individual control unit 180 includes an electron beam control unit 182, a multi-axis electron lens control unit 184,
It has a shaping / deflection control unit 186, a blanking electrode array control unit 188, a deflection control unit 190, a measurement unit 192, and a wafer stage control unit 194. Overall control unit 17
Reference numeral 0 denotes, for example, a workstation, which integrally controls each control unit included in the individual control unit 180. The electron beam control unit 182 controls the electron gun 112. The multi-axis electron lens control unit 184 includes the first multi-axis electron lens 116, the second
Multi-axis electron lens 132, third multi-axis electron lens 142, fourth multi-axis electron lens 144, and fifth multi-axis electron lens 14
8 is controlled.

The shaping / deflecting controller 186 controls the first shaping / deflecting unit 118 and the second shaping / deflecting unit 120. The blanking electrode array control unit 188 controls the voltage applied to the deflection electrodes included in the blanking electrode array 134. The deflection control unit 190 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 146.

The measuring section 192 is connected to the clamp member 200 and measures current values generated in a plurality of conductive members by the irradiation of the electron beam. The measuring unit 192 may further calculate the current value of the electron beam by detecting the sum of the current values generated in the plurality of conductive members 212 by the irradiation of the electron beam. Wafer stage controller 194 controls wafer stage driver 154 to move wafer stage 152 to a predetermined position.

The overall control unit 170 controls the deflection unit 146 in accordance with a plurality of current values flowing through the plurality of conductive members measured by the measurement unit 192 to deflect the electron beam. A storage unit 174 stores the current value of the current flowing through each conductive member and the irradiation position of the electron beam in association with each other. The storage unit 174 may store, for example, current values output from the plurality of conductive members of the calibration member 206 when the electron beam has no irradiation position shift.

FIG. 3 is a top view of the calibration member 206. The calibration member 206 includes a substrate 208 formed of, for example, silicon, a plurality of conductive mark portions 210 for generating a current by irradiation with an electron beam, and a mark portion 210.
And a wiring section 220 for electrically connecting the clamp section 200 with the wiring section 220. The wiring section 220 includes a plurality of bump sections 22.
Preferably, the bump portion 222 is formed along the circumference of the calibration member 206 outside the region where the mark portion 210 is provided. In the present embodiment, the plurality of mark units 210 are provided corresponding to the positions where the plurality of electron guns 112 are provided. Multiple mark parts 2
Preferably, 10 are arranged at intervals substantially equal to the intervals between the electron beams.

By using the calibration member 206 configured as described above, the irradiation positions of a plurality of electron beams can be simultaneously calibrated, so that the exposure positions of the electron beams of the electron beam exposure apparatus that generates a plurality of electron beams can be quickly set. Can be proofread. In the present embodiment, the plurality of mark units 210 are
Since each is electrically insulated, it irradiates the mark section 210 with an electron beam to calibrate the irradiation position, and at the same time, when each of the plurality of electron beams irradiates the mark section 210, the mark section 210 The current value of the generated current can be measured.

FIG. 4 is a top view showing an embodiment of the mark section 210 shown in FIG. As shown in FIG. 4A, the mark section 210 has a plurality of conductive members 212 arranged at intervals d1 smaller than the diameter of the electron beam. FIG.
In (a), the area indicated by the broken line is the diameter d2 of the electron beam.
Is the irradiation area of the electron beam corresponding to.

As shown in FIG. 4B, the mark section 210
Has three or more conductive members 212, and any one of the three or more conductive members 212 and the other conductive member are arranged at an interval smaller than the diameter of the electron beam. Is preferred. Preferably, the plurality of conductive members 212 each have a vertex angle, and the bisectors L1 to L4 of each vertex angle intersect at a single point. It is preferable that the plurality of conductive members 212 are arranged so that all the conductive members 212 are irradiated with the electron beam when the irradiation position of the electron beam does not shift.

Preferably, the plurality of conductive members 212 are provided corresponding to the deflection electrodes of each deflector of the deflection section 146. When each deflector has, for example, four deflection electrodes, the four conductive members 21 of the mark portion 210
It is preferred to have 2.

FIG. 5 is a top view showing the mark section 210. In the present embodiment, the mark unit 210 has eight conductive members 212-1 to 212-8. Each conductive member 21
It is preferable that 2-1 to 212-8 are radially arranged around the position (c) where the electron beam is irradiated when the irradiation position of the electron beam is not shifted. In the drawing, regions (c) and (d) indicated by broken lines are irradiation regions corresponding to the diameter of the electron beam.

The wiring section 220 includes a plurality of bump sections 222-
1 to 222-8, and wirings 220-1 to 220-8 for connecting the bumps 222-1 to 222-8 and the conductive members 212-1 to 212-8, respectively. Wiring section 220
Contacts the clamp member 200 at the bump portions 222-1 to 222-8. The wirings 220-1 to 220-8 and the conductive members 212-1 to 212-8 are preferably formed integrally from the same material.

The mark section 210 is used to deflect the electron beam from the deflection section 1.
It is preferable that the electron beam is larger than a range that can be irradiated with the electron beam when it is deflected by 46. The mark part 210 may have the same size as the opening provided in the fifth multi-axis electron lens 148 through which the electron beam passes, and is preferably larger than the opening. Therefore, even if the irradiation position of the electron beam is shifted, the electron beam can be irradiated on the mark section 210. Therefore, the detection control unit 172 can appropriately detect the irradiation position of the electron beam.

FIG. 6 is a sectional view schematically showing the calibration member 206. The calibration member 206 includes a plurality of mark portions 2.
It is preferable that the wafer 10 be placed on the wafer stage 152 such that the center of the electron beam 10 corresponds to the optical axis of each electron beam.
When the calibration member 206 is placed on the wafer stage 152, the clamp member 200 is pressed down so as to come into contact with the bump portion 222 provided on the calibration member 206, and electrically connects the bump portion 222 and the measurement portion 192. Connect to When the calibration of the electron beam using the calibration member 206 is completed, the clamp member 200 is moved and held in the direction indicated by the arrow in the drawing. Then, the calibration member 206 is transferred from the wafer stage 152 to the outside of the wafer stage 152 by a transfer means such as a transfer arm. Next, the pattern irradiation wafer 150 is placed on the wafer stage 152. At this time, the clamp member 200 maintains the held state.

FIG. 7 is an enlarged sectional view of the calibration member 206. The calibration substrate 208 includes a silicon wafer 230,
A high-resistance layer 232 having a higher resistivity than the resistivity of the conductive member 212. The mark part 210 is formed on the high resistance layer 23.
2 is preferably formed. The calibration member 206 includes a step of forming a high-resistance layer 232 on a silicon wafer 230 to form a silicon substrate 208, a step of applying a photoresist layer on the high-resistance layer 232, and a step of forming a conductive layer on the photoresist layer. Exposing the pattern of the member 212 and the wiring 224 to form a pattern mold; introducing a conductive material into the pattern mold to form the conductive member 212 and the wiring 224; and removing the photoresist layer. It is manufactured by

The high-resistance layer 232 has a resistivity low enough to prevent electron charging due to electron beam irradiation, and has a resistivity high enough to provide insulation between the conductive member 212 and the wiring 224. Is preferred. In the present embodiment, the high resistance layer 232 is made of amorphous silicon or non-doped polysilicon and is formed to a thickness of about 1 μm.

The conductive material is preferably a non-magnetic and hardly oxidizable metal such as Pt. Further, it is preferable that the conductive material is formed to a thickness that does not allow the electron beam accelerated at an acceleration voltage of, for example, about 50 KeV to pass therethrough. The thickness of the conductive material may be 2 μm or more.

The wiring 224 is formed so as to be drawn out along the circumference of the calibration member 206 outside the region where the mark part 210 is provided, and connects the conductive member 212 and the bump part 222. The bump 224 may be formed by solder.

The clamp member 200 is provided with a connector 20 for electrically connecting the bump section 222 and the measuring section 192.
2 and a board 204 that holds the connector 202.

Since the mark portion 210 is provided on the high-resistance layer 232, insulation between the conductive members 212 and the wiring 224 is maintained, and since the high-resistance layer 232 is hardly charged with electrons, the measuring portion 192 An accurate current value can be measured. Therefore, the irradiation position of the electron beam can be accurately calibrated.

The operation of the electron beam exposure apparatus 100 according to the present embodiment will be described with reference to FIGS. First,
The operation of calibrating the irradiation position of the electron beam of the electron beam exposure apparatus 100 using the calibration member 206 will be described. The calibration member 206 is placed on the wafer stage 152 by a transport unit that transports the wafer 150 and the calibration member 206.

The calibration member 206 is a wafer stage 152
, The wafer stage control unit 194 moves the wafer stage 152 to a predetermined position. It is desirable that the wafer stage controller 194 moves the wafer stage 152 to a position where each of the plurality of electron beams irradiates the mark unit 210 as the predetermined position.
In the present embodiment, the plurality of mark units 210 are provided at intervals substantially equal to the interval between the plurality of electron beams, and the wafer stage control unit 194 controls the wafer stage 152 to move each electron beam to the mark unit. The approximate center of 210 is moved to the irradiation position.

After the wafer stage 152 is moved to a predetermined position, the clamp member 200 is pushed down so as to come into contact with the calibration member 206, and the bump section 222 and the measurement section 192 provided on the component member 206 are electrically connected. Connected. In another example, after the wafer stage 152 is moved to a predetermined position, the wafer stage 152 may be moved upward so that the calibration member 206 and the clamp member 200 come into contact with each other.

After the clamp member 200 is depressed so that the calibration member 206 and the clamp member 200 come into contact with each other, the general control unit 170 controls the scanning start means to irradiate each mark unit 210 with an electron beam. Let it. The electron beam applied to each of the mark portions 210 is applied to a conductive member 2 provided in an area irradiated with the electron beam.
12 to generate a current. The measuring section 192 is a conductive member 2
The current value of the current generated in each of 12-1 to 212-8 is measured. The detection control unit 172 includes a measurement unit 192
The irradiation position of each electron beam is detected based on the current value measured in. The detection control unit 172 controls all the conductive members 212-1 to 212-2 by the measurement unit 192, for example.
If it is determined in step 12-8 that the current values of the generated currents are substantially equal, it may be determined that the electron beam irradiates substantially the center of the mark portion.

The storage unit 174 preferably stores in advance the current value of the current flowing through each of the conductive members 212-1 to 212-8 due to the irradiation of the electron beam when there is no displacement of the irradiation position of the electron beam. Time detection control unit 172
Is the current value stored in the storage unit 174 and the measurement unit 192
It is desirable to detect the irradiation position of the electron beam based on the current value measured in. In the present embodiment, the storage unit 174 stores the respective conductive members 212-1 to 212-1 when the electron beam is applied to the approximate center of the mark unit 210.
The current value of the current to flow to 212-8 is stored.

More specifically, when the irradiation position of the electron beam does not deviate from the mark portion 210, that is, the electron beam is irradiated to the approximate center of the mark portion 210 as shown by a broken line (c) in FIG. In that case, each conductive member 212-
1 to 212-8, the area of the region irradiated with the electron beam is substantially equal. Therefore, the current value generated by the electron beam applied to each of the conductive members 212-1 to 212-8 is substantially equal. Then, the measurement unit 192 detects the current value. Also, the storage unit 172
Is substantially equal to the current value of the current flowing through each of the conductive members 212-1 to 212-8 when the electron beam is applied to the approximate center of the mark unit 210, that is, the current value measured by the measuring unit 192. The detection control unit 172 recognizes that the current value stored in the storage unit 172 is substantially equal to the current value measured by the measurement unit 192, and emits an electron beam. It is determined that there is no displacement.

On the other hand, when the irradiation position of the electron beam on the mark section 210 is shifted, for example, the broken line (d) in FIG.
As shown in the figure, the electron beam is applied to a plurality of conductive members 212-1 to 212-1.
When only the conductive member 212-4 is irradiated among the conductive members 212-8, the respective conductive members 212-1 to 212-8 are irradiated.
The area of the region irradiated with the electron beam differs from one another. Therefore, each conductive member 212-1 to 212-2
The current values generated by the electron beam irradiated on 12-8 are different from each other. Then, the detection control unit 172 recognizes that the current value stored in the storage unit 172 is different from the current value measured by the measurement unit 192, and determines that there is a deviation in the irradiation position of the electron beam.

In another example, the storage unit 174 stores the ratio of the current value of the current flowing through each of the conductive members 212-1 to 212-8 by the irradiation of the electron beam when there is no shift in the irradiation position of the electron beam. You may. At this time, the detection control unit 172 compares the ratio stored in the storage unit 174 with each of the conductive members 212 measured by the measurement unit 192.
It is desirable to detect the irradiation position of the electron beam based on the ratio of the current value of the current flowing through −1 to 212-8.

The detection controller 172 controls the deflection controller 190 to correct the electron beam irradiation position based on the detected electron beam irradiation position. Deflection control unit 190
Is based on an instruction from the detection control unit 172,
By controlling 46 to deflect each electron beam, the irradiation position of the electron beam is corrected. Specifically, it is preferable that the detection control unit 172 calculates a correction value for correcting the irradiation position of the electron beam based on the detected irradiation position of the electron beam. Detection control unit 172
The current value of each current generated in the conductive members 212-1 to 212-8 by the electron beam applied to the mark unit 210 is substantially equal to the current value stored in the storage unit 172. It is desirable to calculate a correction value. The deflection control unit 190 corrects the electron beam irradiation position by controlling the voltage value applied to the deflection electrode of the deflector included in the deflection unit 148 based on the correction value.

As described above, the electron beam exposure apparatus 100 according to the present invention detects the electron beam irradiation position based on the current value of the current flowing through the plurality of conductive members 212-1 to 212-8 of each mark section 210, Since the irradiation positions of the electron beams are calibrated, the irradiation positions of a plurality of electron beams can be calibrated simultaneously. Therefore, even when exposure processing is performed using a plurality of electron beams, the irradiation positions of the plurality of electron beams can be quickly calibrated. Further, even when the electronic detection unit (see FIG. 1) is not provided, the irradiation position of the electron beam can be calibrated.

By the above operation, the exposure processing of the wafer 150 is performed using the calculated correction value. Hereinafter, the operation of the electron beam exposure apparatus 100 for exposing a desired pattern on the wafer 150 will be described with reference to FIG. 2. In the above-described correction processing, the operation of irradiating the calibration member 206 with the electron beam is performed in the exposure processing. The operation may be substantially the same as the operation of irradiating an electron beam on the.

A plurality of electron guns 112 generate a plurality of electron beams. In the electron beam shaping means 110, the generated electron beam is irradiated to the first shaping member 114,
Be shaped. In another example, a plurality of electron beams may be generated by further including a unit for dividing the electron beam generated in the electron gun 112 into a plurality of electron beams.

The first multi-axis electron lens 116 independently converges a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second shaping member 122 for each electron beam. The first shaping / deflecting unit 118 deflects a plurality of rectangularly shaped electron beams to desired positions with respect to the second shaping member independently for each electron beam. The second shaping / deflecting unit 120 separates the plurality of electron beams deflected by the first shaping / deflecting unit 118 for each electron beam independently from the second shaping member 1.
22 is deflected substantially perpendicularly. The second shaping member 122 including a plurality of openings having a rectangular shape is used to form a plurality of electron beams having a rectangular cross-sectional shape applied to each opening into a desired rectangular cross-sectional shape to be applied to the wafer 150. It is further shaped into an electron beam.

The second multi-axis electron lens 132 converges a plurality of electron beams independently and forms a blanking electrode array 13.
The focus adjustment of the electron beam with respect to 4 is performed independently for each electron beam. The electron beam focused by the second multi-axis electron lens 132 passes through a plurality of apertures included in the blanking electrode array 134.

The blanking electrode array control unit 188 includes:
It controls whether or not to apply a voltage to the deflection electrodes formed in the blanking electrode array 134 and provided in the vicinity of each aperture. The blanking electrode array 134 switches whether to irradiate the wafer 150 with the electron beam based on the voltage applied to the deflection electrode.

The electron beam not deflected by the blanking electrode array 134 has its electron beam diameter reduced by the third multi-axis electron lens 142, and
6 through the opening included. Fourth multi-axis electron lens 1
44 independently converges the plurality of electron beams to form the deflecting unit 1
The focus adjustment of the electron beam for the electron beam 46 is performed independently for each electron beam, and the focus adjusted electron beam is supplied to the deflection unit 1
The light enters a deflector included in 46.

The deflection control unit 190 controls the plurality of deflectors included in the deflection unit 146 independently. The deflection unit 146 includes:
The plurality of electron beams incident on the plurality of deflectors are independently deflected to a desired exposure position on the wafer 150 for each electron beam. The plurality of electron beams that have passed through the deflection unit 146
The focus on the wafer 150 is adjusted by the multi-axis electron lens 148, and the wafer 150 is irradiated.

During the exposure process, the wafer stage controller 192
Moves the wafer stage 152 in a certain direction. The blanking electrode array control unit 188 determines an aperture through which the electron beam passes based on the exposure pattern data,
Power control is performed for each aperture. The aperture through which the electron beam passes is appropriately changed in accordance with the movement of the wafer 150, and the electron beam is deflected by the deflecting unit 146, so that the wafer 150 can be exposed to a desired circuit pattern.

As described above, the present invention has been described using the embodiments. However, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is apparent to those skilled in the art that various changes or improvements can be added to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

[0062]

As is apparent from the above description, according to the present invention, the irradiation position of the electron beam can be properly calibrated.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a calibration member in a conventional electron beam exposure apparatus.

FIG. 2 is a configuration diagram of an electron beam exposure apparatus according to an embodiment of the present invention.

FIG. 3 is a top view of the calibration member according to the embodiment of the present invention.

FIG. 4 is a top view showing an example of a mark section according to the embodiment of the present invention.

FIG. 5 is a top view of a mark unit according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view schematically showing a calibration member according to the embodiment of the present invention.

FIG. 7 is a sectional view of a calibration member according to the embodiment of the present invention.

[Explanation of symbols]

100: electron beam exposure apparatus, 102: exposure unit, 104
... Casing, 110: Electron beam shaping means, 112: Electron gun (electron beam generator), 114: First shaping member, 116
... First multi-axis electron lens, 118.
0 ... second shaping / deflecting unit, 122 ... second shaping member, 130 ...
Irradiation switching means, 132 ... second multi-axis electron lens, 134 ...
Blanking electrode array, 136: electron beam shielding member, 140: wafer projection system, 142: third multi-axis electron lens, 144: fourth multi-axis electron lens, 146: deflecting unit,
148: Fifth multi-axis electron lens, 150: Wafer, 152
... Wafer stage, 154 ... Wafer stage drive unit, 1
Reference numeral 60: control system, 170: general control unit, 172: detection control unit, 174: storage unit, 180: individual control unit, 182: electron beam control unit, 184: multi-axis electron lens control unit, 18
6: Shaping / deflection control unit, 188: Blanking electrode array control unit, 190: Deflection control unit, 192: Measuring unit, 194
... Wafer stage controller, 200 ... Clamp member, 20
2: Connector, 204: Substrate, 206: Calibration member, 2
08: calibration substrate, 210: mark part, 212-1 to 2
12-8: conductive member, 220: wiring section, 222-1 to 22-2
22-8: bump portion, 224-1 to 224-8: wiring,
232 ... High resistance layer

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H097 AA03 CA16 LA10 5C030 AA02 AA06 AB03 5C034 BB07 5F056 AA07 BA08 BB01 BD03 CB16

Claims (18)

[Claims] 1. An electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: a wafer stage; an electron beam generator for generating the electron beam; A mark unit having a plurality of conductive members arranged at a small interval; and a measuring unit configured to measure a current value of a current generated by irradiation of the electron beam and flowing through the plurality of conductive members. Electron beam exposure apparatus. 2. The mark section has three or more conductive members, and one of the three or more conductive members and another conductive member are larger than a diameter of the electron beam. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is arranged at a small interval. 3. The apparatus according to claim 1, further comprising a detection control unit configured to detect an irradiation position of the electron beam based on the plurality of current values measured by the measurement unit.
Or the electron beam exposure apparatus according to 2. 4. The apparatus according to claim 1, further comprising: a deflecting unit that deflects the electron beam, wherein the detection control unit controls the deflecting unit according to the irradiation position detected by the detecting unit to deflect the electron beam. 4. An electron beam exposure apparatus according to claim 1, wherein: 5. The device according to claim 3, wherein the detection controller corrects the deflection of the electron beam at a position where the electron beam is irradiated on all of the plurality of conductive members.
3. The electron beam exposure apparatus according to claim 1. 6. A storage unit for storing a current value detected from each of the plurality of conductive members when the electron beam has no irradiation position shift, wherein the detection control unit is measured by the measurement unit. Controlling the deflection unit so that the current value of the current flowing through the plurality of conductive members becomes substantially equal to the current value stored in the storage unit, and deflects the electron beam. The electron beam exposure apparatus according to any one of claims 3 to 5. 7. The electron beam exposure apparatus according to claim 4, wherein the deflecting unit has a plurality of deflecting electrodes provided corresponding to the plurality of conductive members, respectively. 8. The apparatus according to claim 4, wherein the mark portion is larger than a range in which the electron beam can be irradiated when the electron beam is deflected by the deflecting portion.
An electron beam exposure apparatus according to any one of the above. 9. The semiconductor device according to claim 1, further comprising a high-resistance layer having a resistivity higher than the resistivity of the conductive member, wherein the mark portion is formed on the high-resistance layer. 9. The electron beam exposure apparatus according to any one of items 1 to 8, 10. The apparatus further comprising: a plurality of the electron beam generating units; and a plurality of the mark units corresponding to the plurality of the electron beam generating units, wherein the measuring unit includes an electron beam from each of the plurality of electron beam generating units. The electron beam exposure apparatus according to claim 1, wherein a current value of a current generated by beam irradiation and flowing through the plurality of conductive members of each of the plurality of mark portions is measured. 11. The electron beam exposure apparatus according to claim 10, wherein an interval between said mark portions and an interval between said electron beams are equal. 12. A calibration member for calibrating the deflection of an electron beam by a deflecting unit in an electron beam exposure apparatus, comprising: a substrate; and a substrate, disposed at a distance smaller than a diameter of the electron beam. A mark portion having a plurality of conductive members, a plurality of mark portions each being connected to the plurality of conductive members, outputting a current value of a current generated by the irradiation of the electron beam and flowing through each of the plurality of conductive members, to an external measurement unit; And a wiring part having the wiring described in (1). 13. The mark portion includes three or more conductive members, and a distance between any one of the three conductive members and another conductive member is smaller than a diameter of the electron beam. 3. The device according to claim 1, wherein
3. The calibration member according to 2. 14. The substrate according to claim 12, further comprising a high-resistance layer having a resistivity higher than the resistivity of the conductive member, wherein the mark portion is formed on the high-resistance layer. 14. The calibration member according to 13. 15. The calibration member according to claim 12, further comprising a plurality of said mark portions, wherein an arrangement interval of said mark portions is equal to an interval of said electron beam. 16. A method for calibrating an irradiation position of an electron beam in an electron beam exposure apparatus, wherein the electron beam exposure apparatus includes a wafer stage and a wafer stage, which are spaced apart from each other by a distance smaller than a diameter of the electron beam. Having a mark portion having a plurality of conductive members disposed therein, generating an electron beam, and measuring current values of currents generated by irradiation of the electron beam and flowing through the plurality of conductive members, respectively. A calibration method comprising: 17. The calibration method according to claim 16, further comprising a step of detecting an irradiation position of the electron beam based on the measured current value. 18. The method according to claim 17, further comprising the step of deflecting the electron beam according to the measured irradiation position of the electron beam.