JP2002164330A - Plasma treatment apparatus having transmission window covered with light shielding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure, whose reproducibility is superior by executing plasma treatment through the use of a plasma treatment apparatus which restrains drop in treatment speed and which is of high reliability. SOLUTION: The plasma treatment apparatus is provided with a container (1), whose inside can be evacuated and a gas supply port (17) which supplies a treatment gas into the container, and the plasma treatment is carried out on an object (W), to be treated, arranged inside the container. A light-shielding film (45), which obstructs the incidence on a transmission window (4) of light which can increase the dielectric loss of the transmission window, is formed on the inner face of the transmission window which transmits high-frequency energy, in order to generate the plasma of the gas inside the container.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing plasma processing on an object to be processed using high frequency energy such as microwaves, and more particularly to a plasma processing apparatus having a transmission window for high frequency energy and a plasma processing apparatus. The present invention relates to a method and a dielectric for a transmission window used therein, and a method of manufacturing a structure using the same.

[0002]

2. Description of the Related Art Plasma processing apparatuses using high-frequency energy such as microwaves and VHF waves as excitation sources for plasma excitation include plasma polymerization apparatuses, CVD apparatuses, surface reforming apparatuses, etching apparatuses, ashing apparatuses, and cleaning apparatuses. Etc. are known.

For example, in the case of a microwave, a CV using such a so-called microwave plasma processing apparatus is used.
D is performed, for example, as follows.

That is, a gas is introduced into a plasma generation chamber and / or a film formation chamber of a microwave plasma CVD apparatus, and simultaneously, microwave energy is supplied to generate plasma in the plasma generation chamber, thereby exciting, dissociating, and ionizing the gas. By doing so, ions, radicals, and the like are generated, and a deposited film is formed on the object to be processed disposed in the plasma generation chamber or a film formation chamber remote from the plasma generation chamber. Then, surface modification such as plasma polymerization, oxidation, nitridation, and fluorination of an organic substance can be performed in the same manner.

[0005] Etching of an object to be processed using a so-called microwave plasma etching apparatus is performed, for example, as follows. That is, an etchant gas is introduced into the processing chamber of the apparatus, and simultaneously, microwave energy is applied to generate plasma in the processing chamber, and the etchant gas is excited, dissociated, ionized, and the ions and radicals are generated. Etching is performed on the surface of the object placed in the room.

[0006] The ashing process of the object to be processed using a so-called microwave plasma ashing apparatus is performed, for example, as follows. That is, an ashing gas is introduced into the processing chamber of the apparatus, and simultaneously, microwave energy is applied to generate plasma in the processing chamber, and ions, radicals, ozone, and the like generated by exciting, dissociating, and ionizing the ashing gas are generated. Ashing the surface of the object to be processed, that is, the photoresist disposed in the processing chamber. In the same manner as ashing, cleaning for removing unnecessary substances attached to the surface of the object to be processed can be performed.

In a microwave plasma processing apparatus,
Since a microwave is used as a gas excitation source, electrons can be accelerated by an electric field having a high frequency, and gas molecules can be efficiently ionized and excited. Therefore,
The microwave plasma processing apparatus has advantages in that gas ionization efficiency, excitation efficiency and dissociation efficiency are high, high-density plasma can be formed relatively easily, and high-quality processing can be performed at low temperature and high speed. Also, because microwaves have the property of transmitting through dielectrics such as quartz glass,
The plasma processing apparatus can be configured as an electrodeless discharge type, which also has the advantage that highly clean plasma processing can be performed.

In order to further increase the speed of such a microwave plasma processing apparatus, an electron cyclotron resonance (EC)
R) has also been put to practical use. The ECR is such that when the magnetic flux density is 87.5 mT, the electron cyclotron frequency at which electrons rotate around the lines of magnetic force is:
Coincides with the general microwave frequency of 2.45 GHz,
This is a phenomenon in which electrons are resonantly absorbed by microwaves, accelerated, and high-density plasma is generated.

Further, another type of plasma processing apparatus for generating high-density plasma has been proposed.

For example, Japanese Patent Application Laid-Open Nos. 03-262119, 01-184923, and U.S. Pat. No. 5,034,086 disclose plasma processing using a radial line slot antenna (RLSA). An apparatus is disclosed.

Alternatively, Japanese Patent Application Laid-Open No. 05-290995, the specification of US Pat. No. 5,359,177, EP
Japanese Patent No. 0564359 discloses a plasma processing apparatus using an annular waveguide with a termination.

Apart from these, as an example of a microwave plasma processing apparatus, an apparatus using an endless annular waveguide in which a plurality of slots are formed on the inner surface as a uniform and efficient introduction apparatus for microwaves has recently been used. (Japanese Patent Laid-Open No.
-345982, U.S. Patent No. 5,538,699.
issue).

On the other hand, Japanese Patent Laid-Open Publication No. 7-90591 discloses a plasma processing apparatus using a disk-shaped microwave introducing device. In this apparatus, a gas is introduced into a waveguide, and the gas is emitted from a slot provided in the waveguide toward a plasma generation chamber.

Japanese Patent Application Laid-Open No. 11-40397 also discloses a plasma processing apparatus provided with an annular waveguide.

9 to 12 are schematic views showing an example of a conventional plasma processing apparatus.

In FIG. 9, 1 is a container whose inside can be evacuated, 2 is a holding means for the object to be processed, 3 is a microwave supplier comprising an annular waveguide having an annular waveguide inside, and 4 is a dielectric window , 7 are gas supply pipes having gas supply ports 7a.
In an apparatus assembled from these components, microwaves are introduced from the microwave inlet 15 of the microwave supplier 3 and supplied into the container 1 from the slots 3b through the dielectric window 4.

FIGS. 10 to 12 are schematic diagrams for explaining the propagation of microwaves in the annular waveguide of the microwave supplier and the state of microwave radiation from the slots.

FIG. 10 shows the annular waveguide when viewed from above, omitting the slots. FIG.
FIG. 12 shows a cross section taken along line BB 'of FIG.

The vicinity of the microwave inlet 15 is an equivalent circuit of an E-plane T-branch, and the route introduced by the microwave introduced from the microwave inlet 15 is changed so as to be distributed clockwise d2 and counterclockwise d1. I do. Each slot 3b is provided so as to intersect with the traveling directions d1 and d2 of the microwave, and the microwave travels while emitting the microwave from the slot.

Since the annular waveguide is endless, the direction d 1
, D2 (z-axis direction) interfere with each other. C1 denotes a ring (ring) formed by connecting the centers of the waveguides. If this length, that is, the circumference is an integral multiple of the guide wavelength (wavelength in the path), the standing wave of a predetermined mode can be obtained. Easy to generate.

FIG. 11 shows a cross section perpendicular to the traveling direction of the microwave (z-axis direction), and shows the upper and lower surfaces 3c of the waveguide.
Is an H plane perpendicular to the direction of the electric field EF, and the left and right surfaces 3d of the waveguide are E planes parallel to the direction of the electric field EF. C0 is the center in the longitudinal direction of the slot 3b, that is, the direction (x-axis direction) perpendicular to the direction of propagation and propagation of the microwave.

As described above, the cross section of the waveguide perpendicular to the microwave traveling direction is a rectangular cross section having the x-axis and the y-axis as long and short sides.

The microwave MW introduced into the annular waveguide 3a is divided right and left by a distribution block 10 having an E-plane T-branch, and propagates with a guide wavelength longer than free space.
The distributed microwaves interfere with each other at the facing portion, and generate a standing wave every half of the guide wavelength. The leakage wave EW radiated through the dielectric window 4 from the slot 3b installed at a position where the electric field crossing the slot is maximized,
A plasma P1 near b is generated. Plasma P generated
1 exceeds the frequency of the microwave power supply (for example, when the power supply frequency is 2.45 GHz, the electron density is 7
If it exceeds × 10 ¹⁰ cm ⁻³ ), the microwave cannot propagate in the plasma, that is, a so-called cutoff occurs, and the microwave propagates at the interface between the dielectric window 4 and the plasma as a surface wave SW.
Surface wave SW between introduced from adjacent slots interfere, surface wave wavelength of SW (λ · ε _r ^{- 1/2} [lambda · free-space microwave wavelength, .epsilon.r: dielectric constant]) per 1/2 An anti-node of the electric field occurs. The surface wave interference plasma (S
IP: Surface-wave Interfere
dPlasma) P2 is generated. At this time, if the processing gas is introduced into the plasma processing chamber, the processing gas is excited, dissociated, and ionized by the generated high-density plasma, so that the surface of the substrate to be processed can be processed.

By using such a microwave plasma processing apparatus, an electron density of about 1.33 Pa, a microwave power of 1 kW or more, and a uniformity of ± 3% or less in a space having a diameter of 300 mm or more can be obtained. ¹²
/ Cm ³ or more, electron temperature 3 eV or less, plasma potential 20
A high density low electron temperature plasma of V or less can be generated.

Therefore, the gas can be sufficiently reacted and supplied to the surface to be processed in an active state.

In addition, when the pressure is 2.7 × 10 ³ Pa and the microwave power is 2 kW, it becomes impossible to detect the current by the microwave at a position 50 mm or more from the inner surface of the dielectric window. This means that a very thin plasma layer can be formed near the dielectric window in the high-pressure region where plasma diffusion is suppressed. Therefore, the substrate surface damage due to incident ions is reduced, so that high-quality and high-speed processing can be performed even at low temperatures.

In the plasma processing apparatus, as the dielectric window, regardless of the configuration of the microwave supplier,
Quartz glass (silicon oxide), alumina (aluminum oxide), aluminum nitride, and the like are used.

[0028]

However, quartz glass is easily damaged by a fluorine-containing gas such as C ₄ F ₈ used for etching or the like.

Alumina has a higher relative dielectric constant than quartz and is excellent in durability against fluorine-containing gas, but has a low thermal conductivity and a high coefficient of thermal expansion, so that it is relatively easily cracked by the incidence of ions from plasma.

Although aluminum nitride does not have the same problem as alumina, the microwave transmittance gradually decreases with the use time, and the plasma processing speed sometimes decreases.

As described above, the selection of the material for forming the dielectric window is not enough to provide a more excellent plasma processing apparatus.

[0032]

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus, a plasma processing method, and a dielectric for a transmission window, in which the processing speed is hardly reduced.

Another object of the present invention is to provide a method of manufacturing a structure having excellent reproducibility by performing plasma processing using a highly reliable plasma processing apparatus.

The essence of the plasma processing apparatus of the present invention has a container whose inside can be evacuated, and a gas supply port for supplying a processing gas into the container. In a plasma processing apparatus for performing a process, an inner surface of a transmission window that transmits high-frequency energy for generating plasma of the gas in the container, and a light that can increase a dielectric loss of the transmission window to the dielectric window. A light-shielding film for preventing the incidence of light.

The outline of another plasma processing apparatus of the present invention is as follows.
In a plasma processing apparatus having an exhaustible container and a gas supply port for supplying a processing gas into the container, and performing plasma processing on a processing target disposed in the container, The microwave transmission window for transmitting microwave energy for generating gas plasma is provided with a reflection film that reflects light that can increase dielectric loss.

The essence of another plasma processing apparatus according to the present invention is that the inside of the container has an exhaustible container, and a gas supply port for supplying a processing gas into the container. In a plasma processing apparatus for performing a plasma processing on a body, a light absorbing a light capable of increasing a dielectric loss is provided on an inner surface of a microwave transmission window that transmits microwave energy for generating plasma of the gas in the container. It is characterized in that an absorbing film is provided.

Further, the outline of the dielectric for a transmission window of the present invention is as follows:
At least one surface is provided with a light-shielding film for preventing light from entering, which can increase dielectric loss.

Another feature of the dielectric for microwave transmitting window of the present invention is characterized in that at least one surface is provided with a reflection film for reflecting light capable of increasing dielectric loss.

Still another feature of the dielectric for a microwave transmitting window according to the present invention is that at least one surface is provided with a light absorbing film for absorbing light capable of increasing dielectric loss.

The function of the light-shielding film that can be used in the present invention will be described below with reference to an example in which aluminum nitride is used for the dielectric window.

For example, in the case of aluminum nitride, the dielectric loss (ta) in the microwave wavelength region of aluminum nitride
nδ) It is considered that the mechanism of generation is that a pair of an impurity substituted with nitrogen and an aluminum vacancy is formed in the aluminum nitride crystal, and the ionized impurity oxygen oscillates in response to an external electric field. .

Although the ionization rate of oxygen due to heat at several hundreds of degrees Celsius is not so high, it is 2.0 eV to 2.8 eV (when the wavelength is 4 eV).
(40 nm to 600 nm) has a high ionization rate.
In the plasma used for the plasma processing, light emission within the above-mentioned wavelength range is observed.

Therefore, it is considered that the impurity oxygen is ionized by the strong light irradiated from the high-density plasma on the aluminum nitride microwave transmission window, and the dielectric loss increases. Some materials other than aluminum nitride may have dielectric loss due to a similar mechanism.

According to the present invention, by providing a light-shielding film for preventing light, which causes an increase in dielectric loss, from entering the transmission window, the dielectric loss in the transmission window can be suppressed low, and the processing speed can be reduced. Deterioration over time can be suppressed.

As the light-shielding film used in the present invention, of plasma light incident on a transmission window made of a dielectric such as aluminum nitride, it is necessary to reduce the amount of incident light which causes an increase in dielectric loss in the transmission window. Membranes that can be used. More specifically, a light absorbing film that can absorb light that causes an increase in dielectric loss, or a reflective film that can reflect light that causes an increase in dielectric loss, or the light absorbing film and the reflection film Combinations with membranes are preferably used.

[0046]

(Embodiment 1) FIG. 1 is a schematic sectional view showing a plasma processing apparatus according to an embodiment of the present invention. Reference numeral 1 denotes a vacuum container that accommodates the object to be processed W therein and can generate plasma in the plasma generation space 9 and is isolated from the atmosphere by, for example, an open-to-air container or a side-by-side load lock chamber (not shown). Container.

Reference numeral 2 denotes a workpiece holding means called a susceptor or a holder for housing and holding the workpiece W in the container 1, and a lift pin 1 capable of moving the workpiece W up and down.
Two. In the figure, the tip of the lift pin is drawn in a needle shape, but the tip that touches the object to be processed may be a flat nail head. Further, if necessary, the holding means 2 may be provided with a temperature adjusting means such as a heater for heating the workpiece W or a cooler for cooling the workpiece.

Reference numeral 3 denotes a high-frequency energy supply for supplying high-frequency energy for generating plasma in the container 1, and here, a microwave supply for supplying microwave energy is shown. The microwave supplier employed here has an endless annular waveguide inside, and its circumference is an integral multiple of the in-wavelength wavelength of the microwave.

Reference numeral 4 denotes a microwave transmission window as a high-frequency energy transmission window made of a dielectric material that hermetically seals the inside of the container 1 and transmits microwaves.

Reference numeral 5 denotes a microwave waveguide, and reference numeral 6 denotes a microwave power supply as a high-frequency power supply.

Reference numeral 7 denotes a gas supply path for supplying a processing gas to be converted into a plasma by microwaves, and has a gas supply port 17 at a tip of a discharge path which is directed obliquely upward.

The gas supply path 7 communicates with a gas supply system 27 such as various gas cylinders 57, bubbles 47, and a flow controller 37.

Reference numeral 8 denotes an exhaust path for exhausting the inside of the container 1, which communicates with an exhaust system including the vacuum pump 18, the bubble 28, and the like through an exhaust port (not shown).

FIG. 2 shows the microwave feeder 3 of the apparatus of FIG.
2 shows a slotted flat plate 23 used in the present embodiment.

The slotted flat plate 23 is sometimes called a slot antenna, and has a plurality of slots 33 in its plane. The slot is provided on a line connecting the center C <b> 1 of the annular waveguide 13. C3 indicates the position of the outer surface of the annular waveguide 13, and C4 indicates the position of the inner surface.

The plasma processing method using the apparatus shown in FIG. 1 is as follows. The processing gas is supplied from the gas supply port 17 into the container 1 evacuated and reduced to a predetermined pressure.

After the processing gas is released into the space 9 serving as the plasma generation chamber, it flows into the exhaust path 8.

On the other hand, a microwave generated in a microwave power source 6 such as a magnetron propagates through a waveguide 5 such as a coaxial waveguide, a cylindrical waveguide or a rectangular waveguide, and It is more introduced into the microwave supplier 3.

The microwaves introduced from the upper H surface facing one slot 33 radiate the microwaves from the slot 33, and rotate clockwise or counterclockwise in FIG. Endless annular waveguide 1
3.

The H plane of the annular waveguide 13 has, for example, TE ₁₀
Since a vertically elongated slot 33 intersecting with the propagation and traveling direction of the microwave propagating and traveling in the road in the mode is provided, the microwave is radiated from the slot 33 toward the space 9. If the circumference of the annular waveguide 13 is set to an integral multiple of the in-path wavelength and the slots 33 are arranged at least half or one-fourth of the in-path wavelength, a standing wave is generated in the waveguide 13, and a micro wave is generated from the slot. Waves are emitted.
When giving priority to microwave radiation from the slot, the circumference should be an integral multiple of the in-path wavelength, and the slot should be placed at half-interval of the in-path wavelength and cross the surface current caused by the microwave flowing on the H plane. It is good to provide.

Alternatively, when priority is given to utilizing interference of a surface wave propagating along the dielectric window emitted from the slot, the slot is formed at an interval of half the wavelength of the surface wave by the microwave flowing through the H plane. It may be provided at a position crossing the surface current.

The microwave is transmitted to the space 9 through the microwave transmission window 4 made of a dielectric.

A processing gas is present in the space 9, and the processing gas is excited by microwave energy to generate plasma. The mechanism of microwave radiation and plasma generation is as described with reference to FIG.

The surface of the object W is subjected to a surface treatment using this plasma. The plasma P may be present only below the slot as shown in FIG. 1 depending on the power of the supplied microwave or the pressure in the container.
May spread over the entire lower surface of the. Further, it can be extended deeply to the vicinity of the object to be processed.

In the present invention, the slots can be unevenly distributed outward according to the size of the object to be processed W and the circumference of the microwave supply waveguide.

Then, on the inner surface of the microwave transmitting window 4,
A light shielding film 45 is provided.

(Light shielding film) Light shielding film 45 used in the present invention
For example, among plasma light incident on the transmission window 4 made of a dielectric such as aluminum nitride, a film capable of reducing the amount of incident light that causes an increase in dielectric loss in the transmission window 4 may be used. More specifically, a light absorbing film that can absorb light that causes an increase in dielectric loss, or a reflective film that can reflect light that causes an increase in dielectric loss,
Alternatively, a combination of the light absorption film and the reflection film is preferably used.

(In the case of a reflective film) When a reflective film is used as the light shielding film 45, the reflective film may be a single film or a laminate of a plurality of layers having different refractive indexes.

The reflective film may be any film that is microwave permeable and can reflect light that can increase dielectric loss in the microwave transmission window. For example, 400 nm
Any film can be used as long as it can reflect light of a wavelength belonging to the range of -600 nm. For example, when aluminum nitride is used for the microwave transmission window, any film can be used as long as it can reflect light having a wavelength in the range of 440 nm to 500 nm. More preferably, the film thickness is determined so that the reflectance in these wavelength ranges is 80% or more, more preferably 90% or more.

Specifically, as a material having a high refractive index, a dielectric such as aluminum oxide, neodymium fluoride, cerium fluoride, lanthanum fluoride, and lead fluoride can be used.

As a material having a low refractive index, a dielectric such as aluminum fluoride, magnesium fluoride, calcium fluoride, lithium fluoride, and sodium fluoride is used.

In the case of a laminate, the thickness df of each layer is approximately λc
/ 4nf may be designed. Here, λc is the central wavelength of the light to be reflected, and nf is the refractive index.

It is preferable that layers having different refractive indices designed to have such a thickness are alternately laminated about 6 to 20 alternately, and the layer located on the outermost surface is a layer having a high refractive index. Further, the wavelength range effective for reflection can be broadened by gradually changing the center wavelength λc in an arbitrary layer.

When the reflection film is formed as a laminate, the outermost surface is preferably a film having excellent oxygen-resistant plasma characteristics and fluorine-resistant plasma characteristics. Specifically, aluminum oxide,
Neodymium fluoride, cerium fluoride, lanthanum fluoride,
A material selected from lead fluoride is used. The thickness of this film is preferably 100 nm or more and 10 μm or less.

FIG. 3A shows an example of a laminated film having, as the light shielding film 45, a high refractive index layer 46 made of a high refractive index material and a low refractive index layer 47 made of a low refractive index material. ing.

The reflection film used in the present invention can be formed by a known film forming method such as sputtering, CVD, vacuum deposition, and ion plating.

(In the case of a light absorbing film) As the light shielding film 45, a light absorbing film may be provided on the inner surface of the microwave transmitting window 4.

The light absorbing film may be a single film or a laminate of a plurality of films.

The light absorbing film may be any film that is microwave permeable and can absorb light that can increase dielectric loss in the microwave transmitting window. For example, 400n
Any film can be used as long as it can absorb light having a wavelength belonging to the range of m to 600 nm. For example, when aluminum nitride is used for the microwave transmission window, any film may be used as long as it can absorb light having a wavelength in the range of 440 nm to 500 nm. More preferably, the film thickness may be determined so that the absorptance is 80% or more, more preferably 90% or more in these wavelength ranges.

Specifically, Si, Ge, C, SiGe,
SiC, GaAs, InP, CdS, CdTe, AgC
It can be composed of at least one material selected from l, TlCl, and SixN (where x is larger than 3/4), or a dielectric such as glass containing metal ions.

In the case of using a semiconductor, non-single-crystal silicon (polycrystalline silicon, amorphous silicon, microcrystalline silicon) is used, and in the case of a carbon film, diamond-like carbon or graphite is preferably used. These include H,
Some atoms such as F, C, N, O, P, and B may be intentionally or inevitably contained.

Assuming that the desired absorption rate is A and the absorption coefficient of the material constituting the film is α, the film thickness d is d = − ｛In (1-
A) It is determined by｝ α ^-1 . For example, A is 90%, α is 5μ
Assuming m ⁻¹ , the film thickness d is 461 nm.

When the light absorbing film is formed as a laminate, it is preferable to provide a protective film having excellent oxygen-resistant plasma characteristics and fluorine-resistant plasma characteristics on the outermost surface. Specifically, a material selected from aluminum oxide, aluminum fluoride, neodymium fluoride, cerium fluoride, lanthanum fluoride, lead fluoride, magnesium fluoride, calcium fluoride, lithium fluoride, and sodium fluoride is used. .

The thickness of this protective film is 100 nm or more and 10 μm.
m or less.

FIG. 3B shows an example of a light absorbing film made of a laminate of a light absorbing material film 48 and a protective film 49 as the light shielding film 45.

The light absorbing film used in the present invention comprises:
It can be formed by a known film forming method such as sputtering, CVD, vacuum deposition, or ion plating.

Further, preferably, a configuration in which the above-described reflecting film and light absorbing film are laminated may be employed as the light shielding film 45. In this case, the reflectance by the reflection film does not need to be 80% or more, and the light absorption by the light absorption film is also 80%.
Need not be. That is, the light transmittance of the light-shielding film should be about 20% or less, more preferably about 10% or less.

(Embodiment 2) A microwave supply device having an annular waveguide having a plane provided with a plurality of slots for radiating microwaves according to another embodiment of the present invention described below is a microwave supply device. It is characterized by having discontinuous linear slots (33, 43) oriented in a direction intersecting with the wave traveling direction.

FIG. 4 is a schematic sectional view showing such a plasma processing apparatus.

This device has a slotted flat plate 23 as shown in FIG. The difference from the apparatus of FIG.
And the point where the object bias power supply 22 is provided.

The pressure in the space 9 is reduced to adjust the plasma so as to spread more.
The plasma processing can be performed while applying a bias voltage. Such a configuration is suitable for anisotropic etching.

Further, it is also preferable that a cooler is attached to the holding means 2 as required to suppress the temperature rise of the workpiece W.

1 and 2 have the same configuration as that of the apparatus of the embodiment shown in FIG.

FIG. 5 shows another example of the slotted flat plate of the microwave supplier used in the present invention.

The example shown in FIG. 4 differs from the flat plate shown in FIG. 2 in that one slot 33 and one slot 43 are provided on the same straight line.

The slots 33 and 43 are provided such that the lines C2 and C5 connecting the centers thereof are biased inward and outward of the ring with respect to the line C1 connecting the center of the annular waveguide 13. .

A pair of slots 33 and 43 in the same radial direction are formed in a discontinuous straight line,
Microwaves can be radiated more uniformly in the radial direction than in the case of the conventional slot. Further, the microwave can be more uniformly radiated in the circumferential direction (the traveling direction of the microwave) than when a long slot in which the slot 33 and the slot 43 are integrated.

The eccentricity of the slot used in the present invention is:
It is determined appropriately according to the processing conditions used. In particular, if the slotted flat plate 23 is configured to be replaceable with respect to a conductive base material having a concave portion serving as the waveguide 13, it is possible to flexibly cope with a change in processing conditions.

The shape of the off-center slot, in which the center of the slot used in the present invention is different from the center of the annular waveguide, is such that the center of each slot is inward and / or outward with respect to the center of the waveguide. If the holes are unevenly distributed, a single rectangular hole or a plurality of holes having a length of 1/4 to 3/8 of the guide wavelength and arranged discontinuously and linearly can be applied. .

FIG. 6 shows another flat plate with slots. In any case, as the microwave transmission window 4, the same light shielding film 45 as that used in the above-described embodiment is additionally provided, and the transmission window 4 has a slotted flat plate so that the light shielding film 45 is on the plasma generation side. It is advisable to assemble the device so as to cover it.

(Embodiment 3) Next, an embodiment of a microwave transmission window dielectric used in the present invention will be described.

High purity A having a specific surface area of 2.4 to 3.0 m ² / g and a total amount of metal impurities of 1000 ppm or less
To the 1N powder, a sintering aid composed of a rare earth element oxide such as Y ₂ O ₃ , an alkaline earth metal oxide such as CaO, a rare earth element halide such as YF ₃ is added, and further added in an alcoholic organic solvent. To prepare a slurry by adding a polyvinyl alcohol-based binder. The obtained slurry is granulated using a spray dryer. The granulated powder is formed into a disk shape or a rectangular parallelepiped shape by a mold, and is further subjected to isostatic pressing.
The obtained molded body is fired at 1650 to 2050 ° C. in an N ₂ atmosphere to obtain an aluminum nitride sintered body.

The obtained sintered body is roughly processed by a diamond grindstone and then finished.
Thereafter, polishing is performed on a lapping machine using a cast iron platen, and finishing is performed using a copper platen to further increase the polishing accuracy. In this way, a base material for a microwave transmitting window of an aluminum nitride sintered body having an average surface roughness of 0.5 μm or less and an average crystal grain size of the sintered structure of 1 to 20 μm is obtained.

A layer having a low refractive index is formed on the surface of the base material of the obtained microwave transmission window by vapor deposition, ion plating, CVD or sputtering, and a layer having a high refractive index is formed thereon. Furthermore, these layers are alternately formed in each of 6 to 20 layers.
The layers may be repeatedly formed.

Thus, the dielectric for a high-frequency energy transmission window with a reflection film according to the present invention is obtained.

(Embodiment 4) Specific surface area is 2.4 to 3.0
m ² / g, a high purity AlN powder having a total amount of metal impurities of 1000 ppm or less, a rare earth element oxide such as Y ₂ O ₃ , an alkaline earth metal oxide such as CaO, and a rare earth halide such as YF ₃ Add a sintering aid consisting of
Further, a slurry is prepared by adding a polyvinyl alcohol-based binder in an alcohol-based organic solvent. The obtained slurry is granulated using a spray dryer. The granulated powder is formed into a disk shape or a rectangular parallelepiped shape by a mold, and is further subjected to isostatic pressing. The obtained molded body was placed in an N ₂ atmosphere at 1650.
It is fired at ２０2050 ° C. to obtain an aluminum nitride sintered body.

The obtained sintered body is roughly processed by a diamond grindstone, and then finished.
Thereafter, polishing is performed on a lapping machine using a cast iron platen, and finishing is performed using a copper platen to further increase the polishing accuracy. In this way, a base material for a microwave transmitting window of an aluminum nitride sintered body having an average surface roughness of 0.5 μm or less and an average crystal grain size of the sintered structure of 1 to 20 μm is obtained.

A light absorbing layer made of amorphous silicon or silicon nitride richer in silicon than the stoichiometric ratio is formed on the surface of the base material of the obtained microwave transmission window by CVD or sputtering. Further, a film of aluminum oxide serving as a protective layer is formed by sputtering.

Thus, a dielectric for a high-frequency energy transmission window with a light absorbing film according to the present invention is obtained.

In each of the embodiments of the present invention described above, the board (plate) -shaped dielectric material for high-frequency energy transmitting windows has been described. However, the shape is not limited thereto, and a curved surface such as a dome shape or a hemispherical shape may be used. May be used.

The annular waveguide used in the high-frequency energy supply device of the present invention is not limited to an annular shape as long as it is annular, and may have various shapes such as an elliptical annular shape, a square annular shape, and a pentagonal annular shape.

When processing a disk-shaped object such as a semiconductor wafer, an optical disk or a magnetic disk, an annular shape is preferable.

As the high-frequency energy supply device having an annular waveguide used in the present invention, it is also preferable to use an assembly of a conductive base material having an annular concave portion serving as a waveguide and a flat plate with slots.

It is also preferable that the waveguide is filled with a dielectric as necessary, in order to shorten the guide wavelength. As such a dielectric, a resin such as tetrafluoroethylene is preferably used.

The length of one slot used in the present invention is preferably from 1/4 to 3/8 of the guide wavelength.

The material of the slotted flat plate and the annular waveguide used in the present invention can be used as long as it is a conductor. However, in order to minimize the propagation loss of high frequency energy, Al, Cu, Ag / Optimum is Cu-plated stainless steel. The direction of the introduction port to the annular waveguide used in the present invention may be any direction that can efficiently introduce high-frequency energy into the high-frequency energy propagation space in the annular waveguide, such as H-plane T-branch or tangential line introduction. Direction in which high-frequency energy can be introduced in parallel to
It may be a direction that can be introduced perpendicular to the H plane, such as a branch. The slot interval in the microwave traveling direction used in the present invention is optimally 1/2 or 1/4 of the guide wavelength.

Although the high-frequency energy supply device having the annular waveguide has been described above, the high-frequency energy supply device used in the present invention is not limited to this type, and the RLSA, the cylindrical resonator, and the rectangular resonance device described above are used. It may be a high-frequency energy supply comprising a vessel. Alternatively, a rod-shaped antenna may be used.

As the high-frequency energy used in the present invention, a microwave or a VHF wave is used, and it is more preferable to use a microwave which can be appropriately selected from a range of 0.8 GHz to 20 GHz.

The dielectric material of the high-frequency energy transmission window used in the present invention is preferably aluminum nitride.
Quartz glass, various other SiO ₂ -based glasses, Si ₃
N ₄ , NaCl, KCl, LiF, CaF ₂ , BaF
Films and sheets of inorganic substances such as ₂ , Al ₂ O ₃ and MgO or organic substances such as polyethylene, polyester, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide and polyimide can also be applied. .

[0120] In the plasma processing apparatus and the processing method of the present invention, a magnetic field generating means may be used. As the magnetic field used in the present invention, a mirror magnetic field or the like can be applied, but the magnetron magnetic field near the slot is optimally a magnetron magnetic field larger than the magnetic field near the substrate. As the magnetic field generating means, a permanent magnet other than a coil can be used. When using a coil, other cooling means such as a water cooling mechanism or air cooling may be used to prevent overheating.

In order to improve the quality of the treatment, the surface of the substrate to be treated may be irradiated with ultraviolet light. As the light source, any light source that emits light that is absorbed by the object to be processed or the gas adhered thereon can be used, and an excimer laser, an excimer lamp, a rare gas resonance line lamp, a low-pressure mercury lamp, and the like are suitable.

The pressure in the plasma processing chamber of the present invention can be selected, for example, from the range of 1.33 × 10 ⁻² Pa to 1.33 × 10 ³ Pa. More preferably, CV
1.33 × 10 ^-1 Pa to 1.33 × 10 ¹ P for D
a, In the case of etching, from 6.65 × 10 ^-2 Pa to 6.
65 Pa, and in the case of ashing, it can be selected from the range of 1.33 × 10 ¹ Pa to 1.33 × 10 ³ Pa.

The plasma processing method according to the present invention will be described with reference to FIGS.

As shown in FIG. 7A, silicon oxide, silicon nitride, silicon nitride oxide, aluminum oxide, tantalum oxide, etc. are formed on the surface of the object 101 such as a silicon substrate by a CVD apparatus or a surface reforming apparatus. Is formed, or an insulating film 102 made of an organic material such as tetrafluoroethylene or polyaryl ether is formed.

As shown in FIG. 7B, a photoresist is applied and baked to form a photoresist layer 103.
To form

As shown in FIG. 7C, a hole pattern latent image is formed by an exposure device, and is developed to form a mask pattern 103 'having a hole 104.

As shown in FIG. 7D, the insulating film 102 under the mask pattern 103 'is etched by an etching apparatus.
Is etched to form a hole 105.

As shown in FIG. 7E, the mask pattern 103 'is removed by ashing using an ashing device.

Thus, a structure having the insulating film with holes is obtained.

Subsequently, when depositing a conductor or the like in the hole, it is also preferable to previously clean the inside of the hole with a cleaning device or the like.

The plasma processing apparatus according to the present invention described with reference to FIGS. 1 to 6 includes at least one of a CVD apparatus, a surface reforming apparatus, an etching apparatus, and an ashing apparatus used in the above-described steps. It is available as one.

FIG. 8 shows another plasma processing method according to the present invention.

As shown in FIG. 8A, aluminum,
A conductor pattern or a polycrystalline silicon pattern (here, line and space) made of a metal such as copper, molybdenum, chromium, and tungsten or various alloys containing at least one of these metals as a main component is formed. .

As shown in FIG. 8B, an insulating film 107 is formed by a CVD apparatus or the like. Here, if necessary, the insulating film 107 may be subjected to chemical mechanical polishing to flatten its surface.

After forming a mask pattern (not shown), holes 108 are formed in the insulating film 107 by an etching apparatus.

When the mask pattern is removed by an ashing device or the like, a structure as shown in FIG. 8C is obtained.

The plasma processing apparatus of the present invention can be used as the above-described CVD apparatus, etching apparatus and ashing apparatus, but is not limited to these as described later.

The formation of a deposited film by the wave plasma processing method of the present invention can be performed by appropriately selecting a gas to be used.
_{3 N 4, SiO 2, Ta} 2 O 5, TiO 2, TiN, A
Insulating film of l ₂ O ₃ , AlN, MgF ₂ , fluorocarbon, etc., a-Si, poly-Si, SiC, GaAs
It is possible to efficiently form various kinds of deposited films such as a semiconductor film such as Al, W, Mo, Ti, and Ta, a metal film such as amorphous carbon, diamond-like carbon, and diamond.

The substrate of the object to be processed by the plasma processing method of the present invention may be a semiconductor, a conductive one, or an electrically insulating one.
Specific examples include a semiconductor substrate such as a Si wafer and an SOI wafer.

As the conductive substrate, Fe, Ni, Cr,
Al, Mo, Au, Nb, Ta, V, Ti, Pt, Pb
And alloys thereof, such as brass and stainless steel.

Examples of the insulating substrate include quartz glass and various other glasses, Si ₃ N ₄ , NaCl, KCl, Li
F, CaF ₂ , BaF ₂ , Al ₂ O ₃ , AlN, MgO
Inorganic substances such as polyester, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride,
Examples include films and sheets of organic substances such as polyvinylidene chloride, polystyrene, polyamide, and polyimide.

As a gas used for forming a thin film on a substrate by the CVD method, a generally known gas can be used.

A-Si, poly-Si, SiC, etc.
Contains Si atoms when forming Si-based semiconductor thin films
The source gas is SiH_Four , Si_Two H₆ Inorganic materials such as
Orchids, tetraethylsilane (TES), tetramethyl
Silane (TMS), dimethylsilane (DMS), dimethyl
Rudifluorosilane (DMDFS), dimethyldichloro
Organic silanes such as silane (DMDCS), SiF_Four ,
Si_Two F₆ , Si_Three F ₈ , SiHF_Three , SiH_Two F_Two ,
SiCl_Four , Si_Two Cl₆ , SiHCl_Three , SiH_Two C
l_Two , SiH_Three Cl, SiCl_Two F_Two Halosilane such as
Such as those that are in a gaseous state at normal temperature and pressure, or
That can be converted. Also, in this case, the Si raw material
Additive gas or carrier that may be introduced by mixing with gas
As gas, H_Two , He, Ne, Ar, Kr, Xe,
Rn.

Si_Three N_Four , SiO_Two Si compound such as
As a raw material containing Si atoms when forming thin films
Is SiH_Four , Si_Two H₆ Inorganic silanes, such as tetra
Ethoxysilane (TEOS), tetramethoxysilane
(TMOS), octamethylcyclotetrasilane (OM
CTS), dimethyldifluorosilane (DMDFS),
Organic sila such as dimethyldichlorosilane (DMDCS)
, SiF_Four , Si_Two F ₆ , Si_Three F₈ , SiHF
_Three , SiH_Two F_Two , SiCl_Four , Si_Two Cl₆ , SiH
Cl_Three , SiH_Two Cl_Two , SiH_Three Cl, SiCl_Two F
_Two Such as halogenated silanes in the gaseous state at normal temperature and pressure
Certain or those that can be easily gasified.
In this case, the nitrogen source gas or acid
As raw material gas, N_Two , NH_Three , N_Two H_Four , Hexa
Methyldisilazane (HMDS), O_Two , O_Three , H_Two O,
NO, N_Two O, NO_Two And the like.

As a raw material containing a metal atom when forming a metal thin film of Al, W, Mo, Ti, Ta, etc.,
Trimethylaluminum (TMAl), triethylaluminum (TEAl), triisobutylaluminum (TIBAl), dimethylaluminum hydride (DMAIH), tungsten carbonyl (W (CO)
₆ ), molybdenum carbonyl (Mo (CO) ₆ ), trimethylgallium (TMGa), triethylgallium (T
Organic metals such as EGa), AlCl ₃ , WF ₆ , TiC
l _3, metal halide, etc., such as TaCl ₃ and the like. In this case, the additive gas or carrier gas which may be mixed with the Si source gas and introduced is H ₂ , H
e, Ne, Ar, Kr, Xe, and Rn.

Al_Two O_Three , AlN, Ta_Two O_Five , TiO
_Two , TiN, WO_Three For forming metal compound thin films such as
As a raw material containing a metal atom,
Minium (TMAl), Triethylaluminum (TE
Al), triisobutylaluminum (TIBAl),
Dimethyl aluminum hydride (DMAlH),
Nustene carbonyl (W (CO)₆ ), Molybdenum
Rubonil (Mo (CO)₆ ), Trimethylgallium (T
Organic such as MGa), triethylgallium (TEGa)
Metal, AlCl_Three , WF₆ , TiCl_Four , TaCl_Five What
Any metal halide and the like can be mentioned. Also, in this case
As oxygen source gas or nitrogen source gas introduced at the same time
Is O_Two , O_Three , H_Two , O, NO, N_Two O, NO_Two , N
_Two , NH _Three , N_Two H_Four , Hexamethyldisilazane (HM
DS).

When a carbon film such as amorphous carbon, diamond-like carbon, or diamond is formed, a carbon-containing gas such as CH ₄ or C ₂ H ₆ is used. When a fluorocarbon film is formed, CF ₄ or C 2 is used. fluoride such as ₂ F _6, or the use of carbon-containing gas.

As the etching gas for etching the substrate surface, F ₂ , CF ₄ , CH ₂ F ₂ , C ₂ F
₆ , C ₄ F ₈ , CF ₂ Cl ₂ , SF ₆ , NF ₃ , Cl
₂ , CCl ₄ , CH ₂ Cl ₂ , C ₂ Cl _{6 and the} like.

In the case where an organic component such as a photoresist is removed by ashing on a substrate surface, an ashing gas is used.
O ₂ , O ₃ , H ₂ O, N ₂ , NO, N ₂ O, NO _{2 and the} like can be mentioned.

When the microwave plasma processing apparatus and the processing method of the present invention are applied to surface modification, for example, Si, Al, Ti, Zn, Ta can be used as a substrate or a surface layer by appropriately selecting a gas to be used. For example, an oxidation treatment or a nitridation treatment of these substrates or surface layers, and a doping treatment of B, As, P or the like can be performed. Further, the present invention can be applied to a cleaning method.
In that case, it can be used for cleaning to remove oxides, organic substances, heavy metals, and the like.

Oxidizing gases used for oxidizing surface treatment of the substrate include O ₂ , O ₃ , H ₂ O, NO, N ₂ O, NO ₂
And the like. Further, as the nitriding gas when the substrate is subjected to the nitriding surface treatment, N ₂ , NH ₃ , N ₂ H ₄ , hexamethyldisilazane (HMDS) and the like can be mentioned.

O ₂ , O ₃ , H ₂ O, H ₂ , NO are used as cleaning / ashing gas for cleaning organic substances on the substrate surface or for ashing removal of organic components such as photoresist on the substrate surface. , N ₂
O, NO _{2 and the} like. Further, as cleaning gases for cleaning inorganic substances on the surface of the substrate, F ₂ , CF ₄ , CH ₂ F ₂ , C ₂ F ₆ , C ₄ F ₈ ,
CF ₂ Cl ₂ , SF ₆ , NF _{3 and the} like.

[0153]

(Embodiment 1) In this embodiment, an apparatus having a structure as shown in FIGS. 4 and 6 was manufactured to generate plasma.

A section perpendicular to the direction in which microwaves travel is 27 mm long and 96 m wide on a conductive member made of aluminum.
An annular groove having a rectangular cross section of m and a circumference of four times the in-path wavelength (159 mm), that is, an annular endless annular waveguide 13 having a diameter of 202 mm was formed.

Eight sets of two pairs arranged on a rectangular flat plate having a length of 40 mm and a width of 4 mm are formed on a conductive flat plate so as to have an interval of a half of the wavelength in the road. A slotted flat plate 23 was produced.

A microwave supplier as shown in FIG. 4 was manufactured by combining a conductive member and a flat plate with slots.

A ceramic sintered body made of aluminum nitride was processed to form an aluminum nitride disk, the surface of which was coated with a 69 nm-thick aluminum oxide layer, and further a 84 nm-thick magnesium fluoride layer was coated on the surface. Coated. In the effective wavelength range of this laminate, the absorption is 425.
From nm to 515 nm, the average reflectance was 97%. This was used for the dielectric window 4.

For the experiment, a probe was placed in the space 9;
After exhausting the space 9, 1 argon gas is supplied from the gas supply path 7.
00 sccm was introduced.

The pressure in the space 9 was maintained at 1.33 Pa by adjusting the conductance valve of the exhaust system and the mass flow controller of the gas supply system.

A microwave of 2.45 GHz and 3.0 kW was introduced into the microwave supplier 3 from the waveguide 5 through the 4E tuner, the directional coupler and the isolator in the TE ₁₀ mode.

The electron density was measured using a Langmuir probe capable of scanning. After 60 minutes from the start of the discharge, the electron density was 2.5 × 10 ¹² / cm ^3.
Met.

(Example 2) As the microwave transmitting window 4,
A total of 16 layers of aluminum oxide and magnesium fluoride were alternately formed on the surface of the disk of the ceramic sintered body made of aluminum nitride by sputtering while gradually increasing the layer thickness.

Aluminum oxide has a thickness of 67 nm to 8
Increased to 1 nm. Magnesium fluoride has a thickness of 8
Increased from 2 nm to 99 nm.

The effective wavelength range of this laminate is 400 nm to
It was 600 nm and the average reflectance was 91%. Then, a plasma processing apparatus as shown in FIGS. 4 and 6 was prepared as in Example 1.

As in Example 1, the electron density was measured immediately after the start of the discharge and 60 minutes after the start of the discharge, and was found to be 2.2 × 10 ¹² / cm ³ .

Example 3 Using the microwave plasma processing apparatus shown in FIG. 1, ashing of a photoresist was performed according to the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 1 was used.

As the object to be processed W, an insulating film made of silicon oxide under the photoresist pattern is etched,
Immediately after forming a via hole, a silicon substrate (300 m in diameter)
m) was used. First, after the silicon substrate was placed on the holding means 2, it was heated to 200 ° C., the inside of the container 1 was evacuated through the exhaust system, and the pressure was reduced to 1.33 × 10 ⁻³ Pa.
Oxygen gas was introduced into the container 1 through the processing gas supply port 17 at a flow rate of 2 slm. Next, the conductance valve 28 provided in the exhaust system was adjusted, and 133
It was kept at Pa. 2.5 kW, 2.45 GHz power was supplied from the microwave power supply 6 to the container 1 via the microwave supply device 3. Thus, plasma was generated in the space 9. At this time, the oxygen gas introduced through the processing gas supply port 17 becomes ozone in the space 9 and is transported in the direction of the silicon substrate W, oxidizes the photoresist on the substrate W, and vaporizes the photoresist, Removed. After the ashing, the ashing speed and the substrate surface charge density were evaluated.

The ashing speed and uniformity obtained were very good, 6.3 μm / min (no difference between lots). The surface charge density showed a sufficiently low value of 0.5 × 10 ¹¹ / cm ² .

Example 4 Photoresist ashing was performed using the microwave plasma processing apparatus shown in FIG.

The microwave transmitting window used had the same configuration as that used in Example 2, and the object to be processed and the processing method were the same as those in Example 3 above.

The ashing speed and uniformity obtained are:
It was 8.6 μm / min (no difference between lots).
The surface charge density showed a sufficiently low value of 1.2 × 10 ¹¹ / cm ² .

(Example 5) Using the microwave plasma processing apparatus shown in FIG. 4, a silicon nitride film for protecting a semiconductor element was formed in the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 1 was used.

As the object to be processed W, a P-type single crystal silicon substrate with an insulating film made of silicon oxide on which an Al wiring pattern having a line and space of 0.5 μm is formed (plane orientation <100>, resistivity 10 Ωcm, Diameter 30
0 mm). First, the silicon substrate is held by holding means 2
After installing on top, exhaust the inside of the container 1 through the exhaust system,
The pressure was reduced to a value of 1.33 × 10 ⁻⁵ Pa. Subsequently, a heater (not shown) attached to the holding means 2 was energized, and the silicon substrate was heated to 300 ° C. and held. Nitrogen gas is supplied at a flow rate of 600 sccm through the processing gas supply port 17 and
Monosilane gas was introduced into the container 1 at a flow rate of 200 sccm. Next, the conductance valve 28 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 2.66 Pa. Then, 3.0 kW, 2.4 kW from the microwave power source 6.
Power of 5 GHz was supplied via the microwave supplier 3 in TE ₁₀ mode. Thus, plasma was generated in the space 9. At this time, it is excited, dissociated, and ionized in the nitrogen gas space 9 introduced through the processing gas supply port 17 to become an active species, transported in the direction of the silicon substrate, reacts with the monosilane gas, and converts the silicon nitride film into silicon. It was formed with a thickness of 1.0 μm on the substrate. The film quality such as film forming speed and stress was evaluated. The stress was determined by measuring the change in the amount of warpage of the substrate before and after film formation using a laser interferometer Zygo (trade name).

The rate of film formation of the obtained silicon nitride film is 6
20 nm / min (no difference between lots). The stress is 1.1 × 10 ⁹ dyne / cm ² (compression), the leak current is 1.2 × 10 ⁻¹⁰ A / cm ² , and the withstand voltage is 10.
It was 3 MV / cm, and it was confirmed that the film was extremely high quality.

(Example 6) Using the microwave plasma processing apparatus shown in FIG. 4, a silicon oxide film and a silicon nitride film for preventing plastic lenses were formed in the following procedure.

As the microwave transmitting window, a window having the same configuration as that used in Example 2 was used.

As the object to be processed W, a plastic convex lens having a diameter of 50 mm was used. After placing the lens on the holding means 2, the inside of the container 1 is evacuated through the exhaust system, and 1.33 is set.
The pressure was reduced to a value of × 10 ⁻⁵ Pa. Processing gas supply port 1
7 and a monosilane gas were introduced into the vessel 1 at a flow rate of 150 sccm and a monosilane gas at a flow rate of 100 sccm. Next, the conductance valve 8 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 6.65 × 10 ⁻¹ Pa. Then, 3.0 kW from the microwave power source 6;
Microwave supplier 3 in 45 GHz power in TE ₁₀ mode
And supplied into the container 1 through Thus, plasma was generated in the space 9. At this time, the nitrogen gas introduced through the processing gas supply port 17 excites, dissociates,
It was ionized to become active species such as nitrogen atoms, transported in the direction of the lens, reacted with monosilane gas, and formed a silicon nitride film with a thickness of 20 nm on the surface of the lens.

Next, oxygen gas and monosilane gas were introduced into the vessel 1 through the processing gas supply port 17 at a flow rate of 200 sccm and a monosilane gas at a flow rate of 100 sccm. Then
Adjust the conductance valve 8 provided in the exhaust system,
The inside of the container 1 was kept at 1.33 × 10 ⁻¹ Pa. Then
A power of 2.0 kW and 2.45 GHz was supplied from the microwave power source 6 into the container 1 via the microwave supplier 3.
Thus, plasma was generated in the space 9. At this time, the introduced oxygen gas is excited and decomposed in the space 9 to become active species such as oxygen atoms, is transported in the direction of the lens, reacts with the monosilane gas, and forms a silicon oxide film on the lens.
It was formed with a thickness of nm. The film forming speed and the reflection characteristics were evaluated.

The deposition rates of the obtained silicon nitride film and silicon oxide film were 370 nm / min (no difference between lots), 400 nm / min. Also, 500
The reflectance in the vicinity of nm was 0.17%, and it was confirmed that the optical characteristics were very good.

(Example 7) Using the microwave plasma processing apparatus shown in FIG. 4, an interlayer insulating film of a semiconductor element was formed in the following procedure. As a microwave transmission window,
The same configuration as that used in Example 1 was used.

As the object to be processed W, a P-type single-crystal silicon substrate having a line and space 0.5 μm Al pattern formed on the uppermost portion (plane orientation <100>, resistivity 10 Ω)
cm, diameter 300 mm). This silicon substrate was set on the holding means. The inside of the container 1 was evacuated through an evacuation system to reduce the pressure to 1.33 × 10 ⁻⁵ Pa. Subsequently, electricity was supplied to a heater attached to the holding means, and the silicon substrate was heated to 300 ° C. and held. Oxygen gas was introduced into the vessel 1 at a flow rate of 500 sccm and monosilane gas at a flow rate of 200 sccm through the processing gas supply port 17. Next, the conductance valve 8 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 4.00 Pa. Next, high-frequency power of 300 W, 400 KHz is applied to the holding means 2 through a bias voltage applying means attached to the holding means, and 2.0 kW from the microwave power source 6 is applied.
2.45 GHz power was supplied into the container 1 via the microwave supply pipe 3 in the TE ₁₀ mode. Thus, plasma was generated in the space 9. Oxygen gas introduced through the processing gas supply port 17 is excited and decomposed in the space 9 to become active species, is transported in the direction of the silicon substrate, reacts with monosilane gas, and forms a silicon oxide film on the silicon substrate. 8
It was formed with a thickness of μm. At this time, the ion species are accelerated by the RF bias and are incident on the substrate to cut the silicon oxide film on the Al pattern to improve the flatness. Then, the film forming speed, uniformity, withstand voltage, and step coverage were evaluated. The step coverage was evaluated by observing a cross section of the silicon oxide film formed on the Al pattern with a scanning electron microscope (SEM) and observing voids.

The rate of film formation of the obtained silicon oxide film was 31.
0 nm / min (no difference between lots). The withstand voltage was 9.1 MV / cm, and it was confirmed that the film was void-free and was of good quality.

Example 8 Using the microwave plasma processing apparatus shown in FIG. 4, an interlayer insulating film of a semiconductor element was etched according to the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 2 was used.

As an object to be processed W, a P-type single-crystal silicon substrate (plane orientation < 10
0>, resistivity 10 Ωcm, diameter 300 mm). First, after placing the silicon substrate on the holding means 2,
The inside of the container 1 is evacuated through the evacuation system, and 1.33 × 10 ⁻⁵ P
The pressure was reduced to a. C ₄ through the processing gas supply port 17
A mixed gas of F ₈ , Ar and O ₂ at a volume ratio of 2: 3: 1 was mixed with 3
It was introduced into the container 1 at a flow rate of 00 sccm. Next, the conductance valve 8 provided in the exhaust system was adjusted, and the inside of the container 1 was maintained at a pressure of 6.65 × 10 ⁻¹ Pa. Next, high-frequency power of 300 W, 400 KHz is applied to the holding means 2 via a bias voltage applying means attached to the holding means, and 2.0 kW from the microwave power supply.
2.45 GHz power was supplied into the container 1 via the microwave supplier 3 in the TE ₁₀ mode. Thus, space 9
A plasma was generated. The C ₄ F ₈ gas introduced into the container 1 through the processing gas supply port 17 is excited in the space 9,
Decomposed into active species, transported in the direction of the silicon substrate, and the ions accelerated by the self-bias were used to etch the insulating film made of silicon oxide to form holes. The substrate temperature rose only to 90 ° C. by a cooler (not shown) attached to the holding means 2. After the etching, the etching rate, the selectivity, and the etching shape were evaluated. The etched shape is obtained by scanning the cross section of the etched silicon oxide film with a scanning electron microscope (SEM).
Observed and evaluated.

The etching rate and the selectivity to polysilicon were 720 nm / min (no difference between lots) and 20, respectively. The hole had a substantially vertical side surface, and it was confirmed that the micro-rotating effect was small.

Embodiment 9 Using the microwave plasma processing apparatus shown in FIG. 4, the polysilicon film between the gate electrodes of the semiconductor elements was etched by the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 1 was used.

As the workpiece W, a P-type single-crystal silicon wafer (plane direction <100>, resistivity 10 Ωcm, diameter 300 mm) having a polysilicon film formed on the top was prepared. First, after the silicon wafer is placed on the holding means 2, the inside of the container 1 is evacuated to about 1.33 × 10 ⁻⁵ Pa
The pressure was reduced to 300 sccm of CF ₄ gas and 2 of oxygen
It was introduced into the container 1 at a flow rate of 0 sccm, and the inside of the container 1 was maintained at a pressure of about 0.27 Pa. Then, 400kHz
z, applies a high frequency power of 300W to the holding means 2, 2.45 GHz, a microwave power of 2.0 kW, were fed into the container 1 through the microwave applicator 3 in TE ₁₀ mode. Thus, plasma was generated in the container 1. The introduced CF ₄ gas and oxygen are excited in the vessel 1,
The polysilicon film is dissociated and ionized to become active species, transported toward the silicon wafer, and etched by the ions accelerated by the self-bias. During processing, the substrate temperature rose only to 80 ° C. due to (not shown). The etching rate, etching selectivity, and etching shape during etching were evaluated. The etched shape was evaluated by observing the cross section of the etched polysilicon film with a scanning electron microscope (SEM).

The etching rate and the selectivity to SiO ₂ were 850 nm / min (no difference between lots) and 24, respectively.
It was confirmed that the etching shape was vertical and the microloading effect was small.

(Embodiment 10) In this embodiment, FIGS.
The apparatus having the configuration shown in FIG.

A cross section perpendicular to the direction of microwave propagation is 27 mm long and 96 m wide on a conductive member made of aluminum.
An annular groove having a rectangular cross section of m and a circumference of four times the in-path wavelength (159 mm), that is, an annular endless annular waveguide 13 having a diameter of 202 mm was formed.

Eight sets of two sets are arranged on a conductive flat plate on a rectangular slot straight line having a length of 40 mm and a width of 4 mm so as to have an interval of a half of the wavelength in the road. A slotted flat plate 23 was produced.

A microwave supplier as shown in FIG. 4 was manufactured by combining a conductive member and a flat plate with slots.

A ceramic sintered body made of aluminum nitride was processed to form an aluminum nitride disk, the surface of which was coated with an amorphous silicon film having a thickness of 540 nm, and the surface thereof was further coated with an aluminum oxide film having a thickness of 480 nm. Was coated. The absorptance of this laminate is 440 nm to 500 n.
The average was 93% in the range of m. This was used for the dielectric window 4.

For the experiment, a probe was placed in the space 9;
After exhausting the space 9, 1 argon gas is supplied from the gas supply path 7.
00 sccm was introduced.

The pressure in the space 9 was maintained at 1.33 Pa by adjusting the conductance valve of the exhaust system and the mass flow controller of the gas supply system.

[0196] 2.45 GHz, 4E tuner 3.0kW microwave directional coupler, introduced in TE ₁₀ mode than waveguide 5 via the isolator microwave applicator 3.

The electron density was measured using a scantable Langmuir probe. The electron density was 2.3 × 10 ¹² / cm ³ every 60 minutes after the start of discharge.
Met.

(Example 11) As a microwave transmission window 4, a 720 nm-thick layer formed by adding a small amount of nitrogen (or ammonia) to silane and subjecting it to the surface of a disk of a ceramic sintered body made of aluminum nitride by PCVD. A Si-rich SiN film, that is, a silicon nitride film SixN containing more Si atoms than the amount of Si determined by the stoichiometric ratio, and a 360-nm-thick aluminum oxide film formed by sputtering were used. The average absorptance of this laminate was 86% in the range of 440 nm to 500 nm.
Then, a plasma processing apparatus as shown in FIGS.

As in Example 1, the electron density was measured immediately after the start of the discharge and 60 minutes after the start of the discharge, and was found to be 2.2 × 10 ¹² / cm ³ .

Example 12 Using the microwave plasma processing apparatus shown in FIG. 1, ashing of a photoresist was performed in the following procedure. As a microwave transmission window,
The same configuration as that used in Example 10 was used.

As the object to be processed W, an insulating film made of silicon oxide under the photoresist pattern is etched,
Immediately after forming a via hole, a silicon substrate (300 m in diameter)
m) was used. First, after the silicon substrate was placed on the holding means 2, it was heated to 200 ° C., the inside of the container 1 was evacuated through the exhaust system, and the pressure was reduced to 1.33 × 10 ⁻³ Pa.
Oxygen gas was introduced into the container 1 through the processing gas supply port 17 at a flow rate of 2 slm. Next, the conductance valve 28 provided in the exhaust system was adjusted, and 133
It was kept at Pa. 2.5 kW, 2.45 GHz power from the microwave power source 6 was supplied into the container 1 via the microwave supplier 3 in the TE ₁₀ mode. Thus, space 9
A plasma was generated inside. At this time, the oxygen gas introduced through the processing gas supply port 17 becomes ozone in the space 9 and is transported in the direction of the silicon substrate W, oxidizes the photoresist on the substrate W, and vaporizes the photoresist, Removed. After the ashing, the ashing speed and the substrate surface charge density were evaluated.

The obtained ashing speed and uniformity were extremely good and were 6.5 μm / min (no difference between lots). The surface charge density showed a sufficiently low value of 0.5 × 10 ¹¹ / cm ² .

Example 13 Ashing of a photoresist was performed using the microwave plasma processing apparatus shown in FIG.

The microwave transmitting window used had the same structure as that used in Example 11, and the object to be processed and the processing method were the same as those in Example 12.

The obtained ashing speed and uniformity are as follows:
It was 8.9 μm / min (no difference between lots).
The surface charge density showed a sufficiently low value of 1.2 × 10 ¹¹ / cm ² .

Example 14 Using the microwave plasma processing apparatus shown in FIG. 3, a silicon nitride film for protecting a semiconductor element was formed in the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 10 was used.

As the object to be processed W, a P-type single crystal silicon substrate with an insulating film made of silicon oxide on which an Al wiring pattern having a line and space of 0.5 μm is formed (plane orientation <100>, resistivity 10 Ωcm, Diameter 30
0 mm). First, the silicon substrate is held by holding means 2
After installing on top, exhaust the inside of the container 1 through the exhaust system,
The pressure was reduced to a value of 1.33 × 10 ⁻⁵ Pa. Subsequently, a heater (not shown) attached to the holding means 2 was energized, and the silicon substrate was heated to 300 ° C. and held. Nitrogen gas is supplied at a flow rate of 600 sccm through the processing gas supply port 17 and
Monosilane gas was introduced into the container 1 at a flow rate of 200 sccm. Next, the conductance valve 28 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 2.66 Pa. Then, 3.0 kW, 2.4 kW from the microwave power source 6.
Power of 5 GHz was supplied via the microwave supplier 3 in TE ₁₀ mode. Thus, plasma was generated in the space 9. At this time, it is excited, dissociated, and ionized in the nitrogen gas space 9 introduced through the processing gas supply port 17 to become an active species, transported in the direction of the silicon substrate, reacts with the monosilane gas, and converts the silicon nitride film into silicon. 1. On the substrate
It was formed with a thickness of 0 μm. The film quality such as film forming speed and stress was evaluated. The stress was determined by measuring the change in the amount of warpage of the substrate before and after film formation using a laser interferometer Zygo (trade name).

The film formation rate of the obtained silicon nitride film is 6
9 nm / min (no difference between lots). The stress is 1.1 × 10 ⁹ dyne / cm ² (compression), the leak current is 1.2 × 10 ⁻¹⁰ A / cm ² , and the dielectric strength is 10.8.
MV / cm, and it was confirmed that the film was extremely high quality.

Example 15 Using the microwave plasma processing apparatus shown in FIG. 4, a silicon oxide film and a silicon nitride film for preventing plastic lenses were formed by the following procedure.

The microwave transmission window used had the same configuration as that used in Example 11.

As the object to be processed W, a plastic convex lens having a diameter of 50 mm was used. After placing the lens on the holding means 2, the inside of the container 1 is evacuated through the exhaust system, and 1.33 is set.
The pressure was reduced to a value of × 10 ⁻⁵ Pa. Processing gas supply port 1
7 and a monosilane gas were introduced into the vessel 1 at a flow rate of 150 sccm and a monosilane gas at a flow rate of 100 sccm. Next, the conductance valve 8 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 6.65 × 10 ⁻¹ Pa. Then, 3.0 kW from the microwave power source 6;
The 45 GHz power is supplied to the container 1 via the microwave feeder 3.
Supplied within. Thus, plasma was generated in the space 9. At this time, the nitrogen gas introduced through the processing gas supply port 17 is excited, dissociated, and ionized in the space 9 to become active species such as nitrogen atoms, is transported in the direction of the lens, reacts with the monosilane gas, A silicon nitride film was formed on the surface of the lens with a thickness of 20 nm.

Next, oxygen gas was introduced into the vessel 1 at a flow rate of 200 sccm, and monosilane gas was introduced at a flow rate of 100 sccm through the processing gas supply port 17. Then
Adjust the conductance valve 8 provided in the exhaust system,
The inside of the container 1 was kept at 1.33 × 10 ⁻¹ Pa. Then
2.0 kW, 2.45 GHz power from the microwave power source 6 is supplied to the container 1 via the microwave supplier 3 in the TE ₁₀ mode.
Supplied within. Thus, plasma was generated in the space 9. At this time, the introduced oxygen gas is excited and decomposed in the space 9 to become active species such as oxygen atoms, is transported in the direction of the lens, reacts with the monosilane gas, and a silicon oxide film is formed on the lens with a thickness of 85 nm. Been formed. The film forming speed and the reflection characteristics were evaluated.

The deposition rates of the obtained silicon nitride film and silicon oxide film were 390 nm / min (no difference between lots), respectively, and 420 nm / min. Also, 500
The reflectance in the vicinity of nm was 0.15%, confirming that the optical characteristics were extremely good.

Example 16 Using the microwave plasma processing apparatus shown in FIG. 4, an interlayer insulating film of a semiconductor element was formed in the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 10 was used.

As the object to be processed W, a P-type single-crystal silicon substrate having a line and space 0.5 μm Al pattern formed on the top (plane orientation <100>, resistivity 10Ω)
cm, diameter 300 mm). This silicon substrate was set on the holding means. The inside of the container 1 was evacuated through an evacuation system to reduce the pressure to 1.33 × 10 ⁻⁵ Pa. Subsequently, electricity was supplied to a heater attached to the holding means, and the silicon substrate was heated to 300 ° C. and held. Oxygen gas was introduced into the vessel 1 at a flow rate of 500 sccm and monosilane gas at a flow rate of 200 sccm through the processing gas supply port 17. Next, the conductance valve 8 provided in the exhaust system was adjusted to maintain the inside of the container 1 at 4.00 Pa. Next, high-frequency power of 300 W, 400 KHz is applied to the holding means 2 through a bias voltage applying means attached to the holding means, and 2.0 kW from the microwave power source 6 is applied.
2.45 GHz power was supplied into the container 1 through the microwave supply pipe 3 in the TE ₁₀ mode. Thus, plasma was generated in the space 9. Oxygen gas introduced through the processing gas supply port 17 is excited and decomposed in the space 9 to become active species, is transported in the direction of the silicon substrate, reacts with monosilane gas, and forms a silicon oxide film on the silicon substrate. 8
It was formed with a thickness of μm. At this time, the ion species are accelerated by the RF bias and are incident on the substrate to cut the silicon oxide film on the Al pattern to improve the flatness. Then, the film forming speed, uniformity, withstand voltage, and step coverage were evaluated. The step coverage was evaluated by observing a cross section of the silicon oxide film formed on the Al pattern with a scanning electron microscope (SEM) and observing voids.

The film formation rate of the obtained silicon oxide film was 36.
0 nm / min (no difference between lots). The withstand voltage was 9.1 MV / cm, and it was confirmed that the film was void-free and was of good quality.

Example 17 Using the microwave plasma processing apparatus shown in FIG. 4, an interlayer insulating film of a semiconductor element was etched according to the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 11 was used.

As an object to be processed W, a P-type single-crystal silicon substrate (plane orientation <1 μm) in which a 1 μm thick insulating film made of silicon oxide is formed on a 0.35 μm line and space Al pattern and a host resist pattern is formed thereon. 10
0>, resistivity 10 Ωcm, diameter 300 mm). First, after placing the silicon substrate on the holding means 2,
The inside of the container 1 is evacuated through the evacuation system, and 1.33 × 10 ⁻⁵ P
The pressure was reduced to a. C ₄ through the processing gas supply port 17
A mixed gas of F ₈ , Ar and O ₂ at a volume ratio of 2: 3: 1 was mixed with 3
It was introduced into the container 1 at a flow rate of 00 sccm. Then, the conductance valve 8 provided in the exhaust system was adjusted, and the inside of the container 1 was maintained at a pressure of 6.65 × 10 ^-1 Pa. Next, high-frequency power of 300 W, 400 KHz is applied to the holding means 2 via a bias voltage applying means attached to the holding means, and 2.0 kW from the microwave power supply.
The 2.45GHz power was fed into the container 1 through the microwave applicator 3 in TE ₁₀ mode. Thus, plasma was generated in the space 9. The C ₄ F ₈ gas introduced into the container 1 through the processing gas supply port 17 is excited and decomposed in the space 9 to become active species, transported in the direction of the silicon substrate, and accelerated by the self-bias. The insulating film made of silicon oxide was etched to form a hole. The substrate temperature rose only to 90 ° C. by a cooler (not shown) attached to the holding means 2. After the etching, the etching rate, the selectivity, and the etching shape were evaluated. The etched shape is obtained by scanning the cross section of the etched silicon oxide film with a scanning electron microscope (SEM).
Was observed and evaluated.

The etching rate and the selectivity to polysilicon were 540 nm / min (no difference between lots) and 20, respectively. The hole had a substantially vertical side surface, and it was confirmed that the micro-rotating effect was small.

Example 18 Using the microwave plasma processing apparatus shown in FIG. 4, the polysilicon film between the gate electrodes of the semiconductor element was etched by the following procedure. As the microwave transmission window, one having the same configuration as that used in Example 10 was used.

As the object to be processed W, a P-type single-crystal silicon wafer (plane direction <100>, resistivity 10 Ωcm, diameter 300 mm) having a polysilicon film formed on the top was prepared. First, after the silicon wafer is placed on the holding means 2, the inside of the container 1 is evacuated to about 1.33 × 10 ⁻⁵ Pa
The pressure was reduced to 300 sccm of CF ₄ gas and 2 of oxygen
It was introduced into the container 1 at a flow rate of 0 sccm, and the inside of the container 1 was maintained at a pressure of about 0.27 Pa. Then, 400kHz
z, applies a high frequency power of 300W to the holding means 2, 2.45 GHz, a microwave power of 2.0 kW, were fed into the container 1 through the microwave applicator 3 in TE ₁₀ mode. Thus, plasma was generated in the container 1. The introduced CF ₄ gas and oxygen are excited in the vessel 1,
The polysilicon film is dissociated and ionized to become active species, transported toward the silicon wafer, and etched by the ions accelerated by the self-bias. During processing, the cooler 414 increased the substrate temperature only to 80 ° C. The etching rate, etching selectivity, and etching shape during etching were evaluated. The etched shape was evaluated by observing the cross section of the etched polysilicon film with a scanning electron microscope (SEM).

The etching rate and the selectivity to SiO ₂ were 820 nm / min (no difference between lots), 24
It was confirmed that the etching shape was vertical and the microloading effect was small.

[0223]

According to the present invention, it is possible to suppress the incidence of light that causes a temporal change in dielectric loss to the microwave transmitting window, and therefore it is possible to suppress the plasma processing characteristics from deteriorating with time.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a plasma processing apparatus according to the present invention.

FIG. 2 is a plan view showing another example of the slotted flat plate used in the present invention.

FIG. 3A is a schematic cross-sectional view of a transmission window used in the present invention, and FIG. 3B is a schematic cross-sectional view of another transmission window used in the present invention.

FIG. 4 is a sectional view showing another plasma processing apparatus according to the present invention.

FIG. 5 is a plan view showing another example of the slotted flat plate used in the present invention.

FIG. 6 is a plan view showing another example of the slotted flat plate used in the present invention.

FIG. 7 is a diagram showing an example of a device manufacturing process using the plasma processing method according to the present invention.

FIG. 8 is a view showing another example of a device manufacturing process using the plasma processing method according to the present invention.

FIG. 9 is a diagram illustrating a configuration of a plasma processing apparatus.

FIG. 10 is a cross-sectional view of a microwave supply device.

FIG. 11 is a sectional view of a waveguide.

FIG. 12 is a diagram showing a state of microwave radiation.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Container 2 Object holding means 3 High frequency energy supply device 4 High frequency energy transmission window 5 Waveguide 6 Power supply 7 Gas supply path 8 Exhaust path 9 Space 13 Annular waveguide 17 Gas supply port 23 Slotted flat plate 27 Gas supply system 33 , 43 slot 45 light shielding film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G02B 1/10 G02B 5/26 5F004 5/22 5/28 5F045 5/26 H01L 21/31 C 5/28 H05H 1/46 B H01L 21/31 H01L 21/302 B H05H 1/46 G02B 1/10 Z (72) Inventor Hideo Kitagawa 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) ) 2H048 CA01 CA05 CA09 CA14 CA17 FA09 FA15 FA24 GA01 GA04 GA07 GA09 GA34 GA60 GA61 2K009 BB11 CC02 CC03 CC06 CC14 DD04 DD09 EE00 4G075 AA30 AA62 AA65 BA05 BA06 BC02 BC04 BC06 BC10 ABA14A04 FB04 CA04 FA01 KA37 KA47 LA15 4K057 DA01 DB01 DB06 DD01 DE06 DE20 DM02 DM29 DN01 5F004 AA01 BA03 BA14 BA20 BB11 BB14 BB18 BB30 BB31 BD01 BD04 CA02 CA04 DA23 DA26 DB02 DB03 DB26 5F045 AA09 AB32 AB33 AC01 AC11 AC15 AD07 AE17 AF03 AF07 BB03 DP03 DQ10 EB03 EH03 EH07

Claims (45)

[Claims] 1. A plasma processing apparatus, comprising: a container whose inside can be evacuated; and a gas supply port for supplying a processing gas into the container, wherein the plasma processing apparatus performs plasma processing on an object to be processed disposed in the container. On the inner surface of the transmission window that transmits high-frequency energy for generating the plasma of the gas in the container, a light-shielding film that prevents light that can increase the dielectric loss of the transmission window from entering the dielectric window is provided. A plasma processing apparatus, comprising: 2. The plasma processing apparatus according to claim 1, wherein said transmission window mainly comprises aluminum nitride. 3. The light shielding film has a thickness of 440 to 500 nm.
The plasma processing apparatus according to claim 1, further comprising a reflection film that reflects the light. 4. The plasma processing apparatus according to claim 1, wherein the light shielding film is a laminate of a film having a low refractive index and a film having a high refractive index. 5. The plasma processing apparatus according to claim 1, wherein the outermost surface of the light-shielding film is formed of a plasma-resistant protective film. 6. The light-shielding film is selected from aluminum oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, cerium fluoride, lanthanum fluoride, lithium fluoride, sodium fluoride, lead fluoride, and neodymium fluoride. 2. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus includes at least one kind of film to be formed. 7. The plasma processing apparatus according to claim 1, wherein said high-frequency energy is microwave energy. 8. The light shielding film has a thickness of 440 nm to 500 nm.
The plasma processing apparatus according to claim 1, further comprising a light absorbing film that absorbs the light. 9. The light shielding film is made of Si, Ge, GaAs,
InP, SiC, SiGe, CdS, CdTe, AgC
2. The plasma processing apparatus according to claim 1, wherein the apparatus is selected from l, TlCl, and C. 10. The light-shielding film is formed of SixN (x> 3 /
4. The plasma processing apparatus according to claim 1, wherein the apparatus is glass containing metal ions. 11. The plasma processing apparatus according to claim 1, wherein the light shielding film is a laminate of two or more dielectric films. 12. The outermost surface of the light-shielding film is made of aluminum oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, cerium fluoride, lanthanum fluoride, lithium fluoride, sodium fluoride, lead fluoride, or fluoride. 2. The plasma processing apparatus according to claim 1, wherein the apparatus is selected from neodymium. 13. A plasma processing method for performing plasma processing on an object to be processed, wherein the object to be processed is subjected to plasma processing using the plasma processing apparatus according to claim 1. 14. The plasma processing method according to claim 13, wherein the plasma processing method is at least one of ashing, etching, cleaning, CVD, plasma polymerization, doping, oxidation, and nitriding. 15. A method of manufacturing a structure, comprising: preparing a plasma processing apparatus according to claim 1; arranging a target object in the plasma processing apparatus; introducing at least one gas to generate high-frequency energy; Producing a plasma accompanied by emission of light capable of increasing the dielectric loss of the transmission window by supplying the plasma, and performing a plasma treatment on the object to be processed. Method. 16. The method according to claim 15, wherein the plasma processing method is at least one of ashing, etching, cleaning, CVD, plasma polymerization, doping, oxidation, and nitriding. 17. The transmission window according to claim 15, wherein the transmission window is mainly composed of aluminum nitride, the light-shielding film includes a film for preventing light of 440 to 500 nm from being incident, and the plasma emits light of 440 to 500 nm. A method for producing the structure according to the above. 18. A dielectric for a high-frequency transmission window, wherein a light-shielding film for preventing incidence of light that can increase dielectric loss is provided on at least one surface. 19. A structure processed by the plasma processing method according to claim 13. 20. A structure processed by the plasma processing method according to claim 15. 21. A plasma processing apparatus, comprising: a container whose inside can be evacuated; and a gas supply port for supplying a processing gas into the container, wherein the plasma processing apparatus performs plasma processing on an object to be processed disposed in the container. A reflection film that reflects light that can increase dielectric loss is provided on an inner surface of a microwave transmission window that transmits microwave energy for generating plasma of the gas in the container. Plasma processing equipment. 22. The plasma processing apparatus according to claim 21, wherein the microwave transmission window mainly includes aluminum nitride. 23. The reflection film has a thickness of 440 nm to 500 n.
22. The plasma processing apparatus according to claim 21, which reflects light of m. 24. The plasma processing apparatus according to claim 1, wherein the reflection film is a laminate of a film having a low refractive index and a film having a high refractive index. 25. The plasma processing apparatus according to claim 24, wherein the outermost surface of the reflection film is formed of a plasma-resistant protective film. 26. The reflection film is selected from aluminum oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, cerium fluoride, lanthanum fluoride, lithium fluoride, sodium fluoride, lead fluoride, and neodymium fluoride. 22. The plasma processing apparatus according to claim 21, including at least one kind of film to be formed. 27. A plasma processing method for performing plasma processing on an object to be processed, wherein the object to be processed is subjected to plasma processing using the plasma processing apparatus according to claim 21. 28. The plasma processing method according to claim 27, wherein the plasma processing method is at least one of ashing, etching, cleaning, CVD, plasma polymerization, doping, oxidation, and nitriding. 29. A structure processed by the plasma processing method according to claim 28. 30. A dielectric for a microwave transmission window, wherein a reflective film for reflecting light capable of increasing dielectric loss is provided on at least one surface. 31. A plasma processing apparatus, comprising: a container whose inside can be evacuated; and a gas supply port for supplying a processing gas into the container, wherein the plasma processing apparatus performs a plasma process on a processing target disposed in the container. A light absorbing film that absorbs light that can increase dielectric loss is provided on an inner surface of a microwave transmission window that transmits microwave energy for generating plasma of the gas in the container. Plasma processing equipment. 32. The plasma processing apparatus according to claim 31, wherein the microwave transmission window is made of aluminum nitride. 33. The light-absorbing film has a thickness of 440 nm to 500 nm.
32. The plasma processing apparatus according to claim 31, which absorbs light of nm. 34. The light absorbing film is made of Si, Ge, GaAs.
s, InP, SiC, SiGe, CdS, CdTe, A
The plasma processing apparatus according to claim 31, wherein the apparatus is selected from gCl, TlCl, and C. 35. The light-absorbing film is composed of SixN (x> 3 /
32. The plasma processing apparatus according to claim 31, which is glass containing metal ions. 36. The plasma processing apparatus according to claim 31, wherein the light absorbing film is a laminate of two or more films. 37. The plasma processing apparatus according to claim 36, wherein the outermost surface of the light absorbing film is formed of a plasma-resistant protective film. 38. The outermost surface of the light absorbing film is made of aluminum oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, cerium fluoride, lanthanum fluoride, lithium fluoride, sodium fluoride, lead fluoride, or fluorine fluoride. 38. The plasma processing apparatus according to claim 37, wherein the apparatus is selected from neodymium oxide. 39. A plasma processing method for performing plasma processing on an object to be processed, wherein the object to be processed is subjected to plasma processing using the plasma processing apparatus according to claim 31. 40. The plasma processing method according to claim 39, wherein the plasma processing method is at least one of ashing, etching, cleaning, CVD, plasma polymerization, doping, oxidation, and nitriding. 41. A structure processed by the plasma processing method according to claim 40. 42. A dielectric for a microwave transmitting window, wherein a dielectric film for absorbing light capable of increasing dielectric loss is provided on at least one surface. 43. A method of manufacturing a structure, comprising: providing the plasma processing apparatus according to claim 21 or 31; arranging an object to be processed in the plasma processing apparatus; Supplying a wave energy to generate plasma accompanied by emission of light capable of increasing a dielectric loss of the transmission window, and performing a plasma treatment on the object to be processed. How to make the body. 44. The method according to claim 43, wherein the plasma processing method is at least one of ashing, etching, cleaning, CVD, plasma polymerization, doping, oxidation, and nitriding. 45. The transmission window according to claim 43, wherein the transmission window is mainly composed of aluminum nitride, the light-shielding film includes a film for preventing light of 440 nm to 500 nm from entering, and the plasma emits light of 440 nm to 500 nm. A method for producing the structure according to the above.