JP2002134394A - Method and apparatus for multiple exposures - Google Patents

Abstract

PROBLEM TO BE SOLVED: To expose a fine pattern exceeding a resolution limit of a resist. SOLUTION: A method for conducting multiple-exposures comprises the steps of mounting a first mask 33 having openings 33A, 33B, and so on, arranged at a pitch of a distance 2x on a photoresist layer 38, and subjecting to primary exposure. The method further comprises the steps of then executing a photoresist layer 38 on a second mask 34, arranged at a pitch of a distance 2x and deviated at a distance x to the openings 33A of the first mask 33, that is, one pitch on the photoresist layer 38, and secondary exposure. The method also comprises the steps of developing the layer 38 and forming a resist pattern, in which openings 40 are alternately formed at the openings of the first mask 33 and the openings of the second mask 34. In this case, the pitch of the resist patterns of the openings 40 becomes a distance x. Since it is x<=p<=2x for a resolution limit (p) of the resist, the pitch of the resist patterns can be set to the resolution limit or smaller.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact probe or an IC for performing an electrical test by contacting a contact pin with a fine electrode of an object to be inspected such as a semiconductor IC chip or an LCD (liquid crystal display). The present invention relates to a multi-exposure method and a multi-exposure apparatus used for manufacturing various devices such as semiconductor devices such as semiconductor devices and LSIs, display devices such as liquid crystal panels, detection devices such as magnetic heads, and imaging devices such as CCDs.

[0002]

2. Description of the Related Art Generally, a probe device is a semiconductor chip such as an IC chip or an LSI, or an LCD (liquid crystal display).
The contact pins of the contact probe are pressed into contact with the respective electrode pads (hereinafter, referred to as pads), and are connected to a tester via a printed circuit board to be used for an electrical test. The contact probe 1 includes a plurality of pattern wirings 3 made of a Ni-based alloy or the like as shown in FIGS.
The film 2 is adhered to one surface of the substrate, and the tips of the pattern wirings 3 projecting from the film 2 are contact pins 3a.
It has been. A window 4 is formed in the wide base 1b of the film 2, and the window 4 is provided with lead-out wiring portions 5 for pattern wirings 3. The film 2 may be formed of a resin film layer PI of polyimide or the like, or may be a two-layer film in which a metal film layer 6 of copper foil or the like is laminated on the resin film layer PI of polyimide or the like, for example, as a ground.

As shown in FIGS. 9 and 10, such a contact probe 1 is incorporated in a mechanical part 7 to form a probe device 8, and the contact pins 3a are formed by fine pads or bumps such as semiconductor IC chips or LCD pads. Contact with the electrode terminals. That is, FIG. 9 and FIG.
In the probe device 8 shown in FIG. 1, a top clamp 11 is placed on a printed circuit board 10 having a central window 10a.
The mounting base 12 with the tip 1a of the contact probe 1 attached to the lower surface thereof is fixed to the top clamp 11 with bolts or the like. Then, the base 1 b of the contact probe 1 is pressed down by the bottom clamp 14 having a substantially frame shape. At this time, the printed circuit board 10 and the base 1b of the contact probe 1 are mutually positioned by the positioning pins. As a result, the tip 1a of the contact probe 1 is held in a downwardly inclined state on the lower surface of the mounting base 12, and the lead-out wiring portions 5 of the pattern wirings 3 at the base 1b of the contact probe 1 are resilient to the elasticity of the bottom clamp 14. The body 15 presses the electrode 16 on the lower surface of the printed circuit board 10 through the window portion 4 to be kept in a contact state.

The pattern wirings 3 including the contact pins 3a of the contact probe 1 are manufactured by photolithography and plating. According to this method, as shown in FIG. 11, a negative (or positive) photoresist layer 18 having a thickness of, for example, about 50 μm is formed on a support substrate 17 on which a base metal layer of Cu or the like is laminated. Exposure is performed by applying a mask 20 in which a plurality of openings 20a for forming pattern wirings 3 to be manufactured are alternately arranged with light shielding portions 20b. Then, the photoresist layer 18 is developed to remove the portions that will become the pattern wirings 3 to form a resist pattern in which openings are arranged at predetermined intervals. Next, Ni or a Ni alloy is formed in these openings by plating, and the photoresist layer 18 is removed, whereby the pattern wirings 3 are formed. Next, the contact probe 1 is formed by bonding the film 2 to the pattern wirings 3 and separating from the support substrate 17.

[0005]

By the way, in recent years, miniaturization and high integration of semiconductor elements have been promoted, and in order to cope with this, the pitch of the contact pins 3a of the contact probe 1 has been required to be narrow, and photolithography has been required. -Patterning with a pitch smaller than the resolution limit (resolution) of the resist used for the plating method is required. The resolution limit of the resist is determined by the characteristics of the exposure optical system and the resist pattern. When the pitch of the resist pattern formed on the photoresist layer 18 corresponding to the area of the contact pins 3a of the pattern wirings 3 reaches the resolution limit, the light shielding section 20
b, the diffracted light or the scattered light passing through the opening 20a to the back surface of the light-shielding portion 20b passes through the opening 20a.
Interference with similar diffracted light or scattered light that wraps around from the center reduces contrast. The light that enters the light-shielding portion of the photoresist layer 18 is diffracted light at the interface between the mask 20 and the photoresist layer 18, the base material 20c of the mask 20 and the scattered light in the photoresist layer 18, and the base material of the mask 20. There are refracted light at the interface between the photoresist layer 18 and the photoresist layer 18 and reflected light and scattered light at the interface between the photoresist layer 18 and the support substrate 17.

[0006] During exposure, the distribution of the exposure amount which passes through the openings 20a of the mask 20 and enters the photoresist layer 18 is as shown in FIG. 12, for example. In this case, the peak portion a in the exposure amount distribution is the exposure amount of the photosensitive area corresponding to the opening 20a of the mask 20. When the reference light amount required for the photoresist layer 18 to be exposed is denoted by b, diffracted light, scattered light, and the like that enter from the photosensitive regions on both sides interfere with the light-shielding region below the light-shielding portion 20b of the mask 20. A standing wave is generated. Since the magnitude of the standing wave generated by the light interference is larger than the sum of the invading light from both photosensitive regions, the total exposure amount c in the light shielding region is equal to the reference light amount b required for the photoresist layer 18 to be exposed.
Beyond. Exposed photoresist layer 1
When the negative resist 8 is developed, as shown in FIG. 13, the resist 18a remains in the opening 22 from which the resist should be removed, and the pattern wirings 3 having a predetermined shape cannot be formed by plating. is there. In the case of a positive resist, a resist pattern 18b as shown in FIG. 14 is formed, and the line width of the resist is reduced or the pattern collapses, so that the pattern wiring 3 having a predetermined shape cannot be formed by plating. There is a disadvantage that.

A projection exposure method is used as a method for forming a fine circuit pattern in a semiconductor device or the like. This technique also requires that a circuit having a pitch equal to or smaller than the resolution limit of the resist be patterned on the photoresist layer. A phase shift method, a modified illumination method, and the like have been adopted as methods for increasing the resolution in the exposure method of the photoresist layer. For example, JP-A-2000-7
No. 7325 discloses a technique of forming a sharp resist pattern on a photoresist by increasing the contrast between a photosensitive region and a light-shielded region by using a phase shift method. However, even in this case, since the diffracted light and the scattered light enter the light-shielding region from both the photosensitive regions corresponding to the openings on both sides of the light-shielding portion of the mask and interfere with each other, the standing wave is generated in the same manner as described above. And the contrast between the light-sensitive region and the light-shielded region is reduced, so that the resist remains in the opening after the development, and there is a disadvantage that sharp patterning cannot be performed. When the exposure light source is replaced with one having a shorter wavelength in order to improve this, diffracted light can be reduced but scattered light remains, so that sharp patterning cannot be performed sufficiently. Also, if the exposure light has a short wavelength in the region below the ultraviolet ray, the light is absorbed by the polymer of the resist when used for a contact probe having a larger resist thickness than that for a circuit pattern. Precise patterning cannot be performed due to insufficient transmission. Therefore, an exposure apparatus for a circuit pattern cannot be used for a contact probe.

SUMMARY OF THE INVENTION In view of such circumstances, an object of the present invention is to provide a multiple exposure method and a multiple exposure apparatus capable of forming a highly fine resist pattern on a resist. Another object of the present invention is to provide a multiple exposure method and a multiple exposure apparatus capable of forming a fine pattern having a pitch smaller than the resolution limit of a resist.

[0009]

According to the multiple exposure method of the present invention, a plurality of masks each include a non-light-shielding portion (and a light-shielding portion).
Are formed at a predetermined pitch and are displaced from each other by one or more pitches between a plurality of masks. The plurality of masks are sequentially applied to the resist one by one, and the resist is exposed to each of the plurality of masks. The resist patterns are alternately arranged corresponding to the respective non-light-shielding portions. When a plurality of masks are overlapped, the non-light-shielding portions of each mask are shifted from each other by one or a plurality of pitches so as to be arranged alternately via the light-shielding portions. When the resist is developed after repeating the exposure, a resist pattern is formed in which the non-light-shielding portions (and light-shielding portions) of each mask are alternately arranged, and the arrangement pitch of the resist pattern is equal to the pitch of each non-light-shielding portion of each mask. The pitch can be smaller than the arrangement pitch, and the miniaturization of the resist pattern can be promoted.
By arranging the non-light-shielding portions at a predetermined pitch in each mask, the light-shielding portions between the non-light-shielding portions are also arranged so as to be shifted from each other by one or more pitches at a predetermined pitch. If the resist is a negative type, an opening is formed as a resist pattern in the light-shielding portion of the mask. If the resist is positive, an opening is formed as a resist pattern in the non-light-shielding portion of the mask.

The plurality of masks include a first mask in which a plurality of first non-light-shielding portions are arranged and a second mask in which a plurality of second non-light-shielding portions are arranged. The pitch of the resist pattern in the resist may be smaller than each pitch of the portion and the second non-light-shielding portion. Since the pitch of each non-light-shielding portion of the first and second masks is made larger than the pitch of the resist pattern, even if diffracted light or scattered light enters the light-shielding region of the resist, the distance between the non-light-shielding portions is large. The occurrence of standing waves can be prevented without interference, and the exposure of the resist by each mask can be sharpened, and the resist pattern formed on the resist can be smaller than the pitch of the non-light-shielding portion of each mask.

The respective pitches of the first and second non-light-shielding portions may be larger than the resolution limit of the resist, and the pitch of the resist pattern may be smaller than the resolution limit of the resist. By setting the non-light-shielding portion of each mask to a pitch larger than the resolution limit of the resist, sharp exposure of the resist by each mask can be performed without generating a standing wave due to interference of diffracted light or scattered light in the light-shielding region of the resist. The resist pattern can be formed at a pitch equal to or less than the resolution limit of the resist. By fabricating the resist pattern in this manner, even if the pattern arrangement pitch of the resist pattern is equal to or less than the resolution limit of the resist, or is close to the resolution limit, the arrangement pitch of the non-light-shielding portion of each mask is made larger than that, that is, Since the pattern of the non-light-shielding portion and the light-shielding portion can be formed at a pitch multiplied by a multiple, a high-resolution pattern can be formed. Further, three or more masks may be provided without being limited to the two types of the first mask and the second mask. In this case, the arrangement pitch of the non-light-shielding portion in each mask can be formed as a pitch obtained by multiplying the pitch in the resist pattern by a multiple according to the number of masks and displacing the positions between the masks by one or more pitches. Since the resolution at the time of exposure is larger than the resolution limit, a high-resolution resist pattern can be manufactured.

The exposure method may use not only the contact method but also a projection method such as a proximity method or a reduced projection method.

A multiple exposure apparatus according to the present invention comprises a resist, a light source device for irradiating the resist with exposure light, and a non-light-shielding portion having a pitch wider than a resist pattern to be formed on the resist by one or more pitches. A plurality of masks formed in a shifted manner, and by sequentially exposing the resist through each of the plurality of masks, the resist has a resist pattern alternately arranged corresponding to each non-light-shielding portion of the plurality of masks. Is formed. The first exposure is performed by applying the first mask to the resist, then the second exposure is performed by applying the second mask to the resist, and the resist is exposed to light and then developed. Non-shading part (and shading part)
Are formed alternately, and the pitch of the resist pattern is smaller than the pitch of each non-light-shielding portion of each mask. Therefore, the pitch of the resist pattern is not limited to the resolution limit of the resist. If a plurality of masks are provided, the pitch of the non-light-shielding portions of each mask can be set to an interval corresponding to the number of masks of the resist pattern.

The pitch of each non-light-shielding portion in each mask may be larger than the resolution limit of the resist, and the pitch of the resist pattern in the resist may be smaller than the resolution limit of the resist. The pitch of the non-light-shielding portions of each mask can be set at intervals corresponding to the number of masks in the resist pattern, and the pitch of the non-light-shielding portions of each mask is sequentially shifted by one or more pitches according to the number of masks. Even when a resist pattern is manufactured at the following pitch, a plurality of exposures using each mask can be performed by exposing a non-light-shielding portion formed at a pitch larger than the resolution limit of the resist.

[0015]

FIG. 1 is a block diagram showing an embodiment of the present invention.
6A to 6C, the same or similar parts as those of the above-described related art will be described using the same reference numerals. FIG. 1 is a schematic configuration diagram of a multiple exposure apparatus used in the multiple exposure method according to the embodiment, FIG. 2 shows a mask used in the multiple exposure method, (a) is a perspective view of a first mask, and (b) is a second view. FIG. 3 is a perspective view of a mask, FIG. 3 is a cross-sectional view of a principal part showing a method of manufacturing a contact probe according to the embodiment in the order of steps, and FIG. 4 shows an exposed state. FIG. 4 (a) shows a first mask formed on a photoresist layer. FIG. 5B is a cross-sectional view illustrating a first exposure state, FIG. 5B is a cross-sectional view illustrating a second exposure state in which a second mask is applied on the photoresist layer, FIG. FIG. 4 is a central longitudinal sectional view showing a resist pattern of a photoresist layer after development. In the multiple exposure method according to the present embodiment, a resist pattern for plating the pattern wirings 3 of the contact probe 1 on the photoresist layer is formed, and the resist pattern to be formed is the pattern wirings 3. Correspondingly, for example, a plurality of equally spaced openings are formed in the photoresist layer.

A multiple exposure apparatus 2 used in the multiple exposure method
9 is a light source device 30 and an exposure unit 3 as shown in FIG.
1 is provided. The light source device 30 irradiates and exposes the exposure unit 31 by using an i-ray having a wavelength of, for example, 365 nanometers for exposure light using, for example, a high-pressure mercury lamp as a light source. A plurality of types, for example, two types, of masks used in the exposure unit 31 are set as one set. This set of masks is composed of a first mask 33 and a second mask 34 as shown in FIG. 2, and the first mask 33 shown in FIG. A plurality of openings 33A, 33B,... Are arranged at intervals of a pitch, and the space between and around each of the openings 33A,. The second mask 34 shown in FIG.
3 are shifted in the arrangement direction by a distance x, that is, one original pitch, with respect to each of the openings 33A, 33B,..., And a plurality of openings 34A, 34B, 34C,. In the second mask 34, the space between and around the openings 34A,. In FIG. 2, the openings 33A... 34A... Of each mask are formed in a rectangular plate for convenience, but are formed appropriately according to the shape of the pattern wirings 3. When used for exposure of a circuit pattern of a semiconductor element or the like, each opening does not need to be completely separated as a whole.

Therefore, when the first and second masks 33 and 34 are overlapped with their ends aligned, the openings of both masks 33 and 34 are arranged alternately at a uniform pitch x. And each opening 34A, 33A, 34B of pitch x,
.. Will form a resist pattern to be formed on the photoresist layer. Also, the light source device 30
Where p is the resolution limit (resolution) of the resist by
It is assumed that the relationship of p <2x holds. Alternatively, p ≦ x may be satisfied. The exposure unit 31 has a base metal layer 37 made of a thin layer of Cu or the like on a support substrate 36 of stainless steel or the like.
Are laminated, a photoresist layer 38 is formed thereon, and first or second masks 33 and 34 using glass or a film as a base material are sequentially placed. The photoresist layer 38
Here, a negative resist is used, but a positive resist may be used instead. As the photoresist, for example, a film resist is used, but a liquid resist or the like may be used as long as it is a material that reacts to light, or a rubber-based resist or the like is insoluble in a chemical treatment. Various resistive materials can be used as the resist.

The multiple exposure apparatus 29 according to the embodiment has the above-described configuration. Next, a process of manufacturing the contact probe 1 using the multiple exposure method will be described with reference to FIG. [Supporting Substrate and Base Metal Layer Forming Step] In FIG. 3A, Cu (copper) is placed on a supporting substrate 36 made of stainless steel.
The base metal layer 37 is formed by plating. The base metal layer 37 is formed on the upper surface of the support substrate 36 with a uniform thickness. [Pattern Forming Step] A photoresist layer 38 is formed on the base metal layer 37, and, for example, a first mask 33 is provided thereon (see FIG. 4A).

The exposure unit 31 is formed in this way, and as shown in FIG. 4A, exposure is performed by irradiating exposure light from the light source device 30. In this case, the photoresist layer 38
Are openings 33A of the first mask 33 because of the negative type.
Are irradiated with light to cure the photosensitive regions 33a, 33b,. The distribution of the exposure amount of the photoresist layer 38 is as shown by the solid line in FIG. 5, and the exposure amounts of the photosensitive regions 33a, 33b,... Are mountain shapes m1, m2,. In this case, adjacent Yamagata m1,
m2... are far apart from the pitch 2x, so that the opening 3
The diffracted light and the scattered light that pass through the light-shielding region 38s after passing through 3A, 33B and the like do not interfere with each other, so that no standing wave is generated and the amount of light is small. Next, without developing the photoresist layer 38, a second mask 34 is provided on the photoresist layer 38 instead of the first mask 33, and the light source device 30 exposes the second mask 34 again. In this case, the photoresist layer 38 includes a photosensitive area 34a corresponding to each opening 34A of the second mask 34,
.. Are irradiated with light and cured. The distribution of the exposure amount of the photoresist layer 38 is as shown by a dashed line in FIG. 5, and the exposure amounts of the photosensitive regions 34a, 34b, 34c,... Become mountain shapes n1, n2, n3. In this case, since the adjacent peaks n1, n2, and n3 are greatly separated from the pitch 2x, diffracted light and scattered light that pass through the openings 34A and 34B and enter the light-shielding region do not interfere with each other. Does not occur.

Moreover, in the photoresist layer 38, a light-shielding area 38s between a photosensitive area 33a by the first mask 33 and an adjacent photosensitive area 34a by the second mask 34.
Even if the diffracted light, scattered light, and the like that intrude into the exposure dose distribution shown in FIG. 5 are not exposed at the same time, they do not interfere with each other, so that no standing wave is generated. Therefore, the total exposure amount in the light-shielding region 38s is simply obtained by adding the first and second exposure amounts in this region, and the exposure amount in the light-shielding region 38s does not reach the reference light amount b required for exposure.
Therefore, by developing the photoresist layer 38 thereafter, a resist pattern of the openings 40... As shown in FIG. The pitch x of the openings 40 is smaller than the resolution limit p of the resist by the light source device 30.

[Electroplating Step] Next, as shown in FIG. 3C, a Ni or Ni alloy layer N serving as the pattern wiring 3 is formed in each opening 40 of the photoresist layer 38 by electrolytic plating. As a result, the pattern wiring 3 is formed in a substantially square cross section having a predetermined thickness. afterwards,
As shown in FIG. 3D, the photoresist layer 38 is removed. [Film coating step] Next, as shown in FIG.
The film 2 is adhered on the i or Ni alloy layer N and other than the tip of the pattern wiring 3, that is, the portion that becomes the contact pin 3a. The film 2 is a two-layer tape in which a metal film 6 such as a copper foil is integrally provided on a polyimide resin PI. Before the step of applying the film 2, a predetermined pattern is formed on the copper surface of the metal film 6 of the two-layer tape by etching, and then gold plating is applied according to the application to form a ground surface. In the attaching step, the resin surface of the polyimide resin PI of the two-layer tape is attached to the Ni or Ni alloy layer N. In addition, the metal film 6 does not necessarily need to be a copper foil.

[Separation Step] Then, as shown in FIG. 4F, the film 2, the pattern wiring 3, and the base metal layer 3
7 is separated from the support substrate 36,
This is a shape in which only the pattern wiring 3 is adhered to the film 2 through Cu etching. [Gold coating step] Next, the exposed pattern wiring 3
Is subjected to Au plating to form an Au plating layer A on the surface. Through the above steps, the contact probe 1 as shown in FIGS. 7 and 8 is manufactured.

As described above, according to the multiple exposure apparatus 29 and the multiple exposure method according to the present embodiment, the pattern wiring 3,
In particular, even if the arrangement pitch x of the contact pins 3a is less than or equal to the resolution limit p of the resist, the first and second masks 33, 34 having the non-light-shielding portions 33A, 34A,. It is possible to form a sharp and fine resist pattern in which no resist remains in the opening 40, and to manufacture the contact probe 1 having a fine contact pin arrangement corresponding to a narrow pitch electrode terminal having a resolution limit p or less. In particular, in a method of manufacturing a contact probe using a conventional photolithography / plating method, the thickness of a photoresist layer in the exposure light traveling direction is about 30 to 50 μm, for example, 50 μm.
When the wavelength of the exposure light is in the range of 300 to 400 nanometers, for example, 365 nanometers (i-line), the resist pattern of the apertures 40 that can be formed due to the resolution limit has a limit pitch of about 35 μm. However, according to the present embodiment, the thickness of the resist is 25 μm
As described above, the resist pattern of the openings 40 is preferably 35 μm or less, preferably 35 μm
It is possible to obtain a finer one having a pitch of less than 20 μm.

In the above-described embodiment, two masks 33 and 34 used in the multiple exposure method are formed as one set, and openings 33A... 34A... Corresponding to every other opening 40. Although formed on each of the masks 33 and 34, the present invention is not limited to this.
= 2, 3, 4,...) May be used (n + 1) sets of masks in which openings corresponding to every other opening 40 are shifted from each other by one pitch (or a plurality of pitches). In this case, the photoresist layer 38 is developed after exchanging the mask (n + 1) times by exchanging the mask. By doing so, the openings 40 having a finer pitch can be formed.
Can be formed. Further, the pitch of the openings between the plurality of masks or in each mask may not be the same pitch but may be unequal. In the embodiment, since the resist is made into a negative type, an opening is formed as a resist pattern in a light shielding portion of a mask. However, if the resist is a positive type, an opening is formed as a resist pattern in a non-light shielding portion of the mask. Will be. In the present invention, multiple exposure may be performed using a phase shift method. In this case, a phase shift unit (shifter) may be provided at every other opening arranged in a plurality of masks. When the multiple exposure according to the above-described embodiment is performed using this mask, the contrast of the exposure amount distribution becomes clearer, and the resist pattern of the openings 40 can be manufactured with higher accuracy.

The present invention is not limited to the above-described method for manufacturing the contact probe 1, but can be used for manufacturing other appropriate resist patterns. For example I
It can be used for manufacturing various devices such as semiconductor chips such as C and LSI, display elements such as liquid crystal panels, detection elements such as magnetic heads, and image pickup elements such as CCDs. In particular, if various circuit patterns are divided into openings which are displaced from each other by one or more pitches in a plurality of masks and used to expose the resist, an excimer which has been conventionally used when manufacturing this kind of device with resists is used. A resist pattern equivalent to a conventional resist pattern using exposure light of a shorter wavelength can be manufactured using exposure light of a laser or the like having a relatively long wavelength. Also, a thicker resist can be used. Therefore, even if a finer circuit pattern or the like is required, it can be manufactured without employing a separate light source device capable of irradiating light of a shorter wavelength, and an increase in manufacturing cost can be suppressed.

[0026]

As described above, in the multiple exposure method and multiple exposure apparatus according to the present invention, a plurality of masks whose positions are shifted from each other by one or more pitches of the non-light-shielding portion are sequentially applied to the resist, and the exposure is repeated. By developing the resist later,
A resist pattern having a pitch smaller than the pitch of the non-light-shielding portion of each mask can be formed, and miniaturization can be promoted. Also, a resist pattern with a finer pitch can be obtained without shortening the wavelength of the exposure light, and even a resist having a relatively large thickness can be sharply exposed.

The plurality of masks include a first mask in which a plurality of first non-light-shielding portions are arranged and a second mask in which a plurality of second non-light-shielding portions are arranged. Since the pitch of the resist pattern in the resist is smaller than the pitch of the portion and the second non-light-shielding portion, the pitch of each non-light-shielding portion of the first and second masks is made larger than the pitch of the resist pattern, and In this way, it is possible to prevent the formation of standing waves due to interference of diffracted light and scattered light, and to perform sharp exposure of the resist using individual masks. Can be smaller than the pitch. In addition, each pitch of the first and second non-light-shielding portions is set to an interval larger than the resolution limit of the resist, and the pitch of the resist pattern in the resist is set to an interval smaller than the resolution limit of the resist. By making the pitch of the light-shielding portion larger than the resolution limit of the resist, the resist can be sharply exposed by an individual mask without generating a standing wave due to interference of diffracted light or scattered light in the light-shielded region of the resist, and The resist pattern can be formed at a pitch equal to or less than the resolution limit of the resist, which can promote miniaturization.

[Brief description of the drawings]

FIG. 1 is a main part configuration diagram of a multiple exposure apparatus according to an embodiment of the present invention.

FIG. 2 shows a mask used in the multiple exposure method according to the embodiment, wherein (a) is a perspective view of a first mask,
(B) is a perspective view of the second mask.

FIG. 3 is a process chart showing a method of manufacturing a contact probe including a multiple exposure method.

4A is a diagram illustrating an exposure state with a first mask mounted, and FIG. 4B is a diagram illustrating an exposure state with a second mask mounted.

FIG. 5 is an exposure amount distribution chart showing each exposure amount of a photoresist layer in a state where first and second masks are mounted by a multiple exposure method.

FIG. 6 is a vertical sectional view of a main part showing a resist pattern of a photoresist layer after development.

FIG. 7 is a plan view of a general contact probe.

FIG. 8 is a sectional view taken along line CC of the contact probe shown in FIG. 7;

FIG. 9 is an exploded perspective view of the probe device.

10 is a longitudinal sectional view of the probe device shown in FIG.

FIG. 11 is a diagram showing a normal exposure state of a photoresist layer.

FIG. 12 is an exposure amount distribution diagram of the photoresist layer by the exposure shown in FIG.

FIG. 13 is a longitudinal sectional view showing a negative photoresist layer after development.

FIG. 14 is a longitudinal sectional view showing a positive photoresist layer after development.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Contact probe 30 Light source device 31 Exposure unit 33 First mask 33A, 33B, 34A, 34B, 34C Opening (non-light-shielding part) 33S, 34S Light-shielding part 34 Second mask 38 Photoresist layer 40 Opening

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/66 H01L 21/30 502C F-term (Reference) 2G011 AA15 AA17 AA21 AB06 AB08 AC14 AE03 AF07 2H095 BA12 BB02 BB33 BB36 BC09 2H097 AA12 GA45 GB02 JA02 LA10 LA12 4M106 BA01 DD03 5F046 AA13 BA01 CA02 CB17

Claims (5)

[Claims] 1. A non-light-shielding portion is formed on a plurality of masks at a predetermined pitch and is shifted from one another by one or more pitches between the plurality of masks. These masks are sequentially applied to a resist one by one. A multiple exposure method, wherein each exposure is performed to form a resist pattern alternately arranged on the resist in correspondence with each non-light-shielding portion of a plurality of masks. 2. The plurality of masks include a first mask in which a plurality of first non-light-shielding portions are arranged, and a second mask in which a plurality of second non-light-shielding portions are arranged. 2. The multiple exposure method according to claim 1, wherein a pitch of the resist pattern in the resist is smaller than each pitch of the non-light-shielding portion and the second non-light-shielding portion. 3. The pitch of each of the first and second non-light-shielding portions is set to be larger than the resolution limit of the resist, and the pitch of the resist pattern in the resist is set to be smaller than the resolution limit of the resist. 3. The multiple exposure method according to claim 2, wherein: 4. A resist, a light source device for irradiating the resist with exposure light, and a non-light-shielding portion having a wider pitch than a resist pattern to be formed on the resist are formed so as to be displaced from each other by one or more pitches. A plurality of masks, and by sequentially exposing the resist through each of the plurality of masks, the resist is formed with a resist pattern alternately arranged corresponding to each non-light-shielding portion of the plurality of masks. A multiple exposure apparatus. 5. The method according to claim 1, wherein a pitch of each non-light-shielding portion in each mask is larger than a resolution limit of the resist, and a pitch of a resist pattern in the resist is smaller than a resolution limit of the resist. Item 5. A multiple exposure apparatus according to Item 4.