JP2002122857A - Electro-optical device, electronic equipment substrate for electro-optical device, method of manufacturing substrate for electro-optical device, and light shielding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-shielding film having excellent light-shielding performance and to provide a substrate for electro-optic device, an electro-optical device and an electronic equipment having the above light-shielding film. SOLUTION: The light-shielding film 111 has a barrier layer B1 made of one of nitrogen compounds of high melting point metals, silicon compounds, tungsten compounds, tungsten and silicon and a metal layer M1 made of either a metal single material or a metal compound which causes deterioration in the light-shielding property when the metal becomes its oxide.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an electro-optical device, an electronic apparatus, a substrate for an electro-optical device, a method for manufacturing a substrate for an electro-optical device, and a light-shielding film, and is particularly suitable for use in a projection type liquid crystal display device. The present invention relates to a configuration of a light shielding film having excellent light shielding performance.

[0002]

2. Description of the Related Art FIG. 15 is a sectional view showing an example of a liquid crystal device. In this liquid crystal device, liquid crystal is sealed between two transparent substrates such as a glass substrate and a quartz substrate, and a thin film transistor (Thin Film Transistor) forming one of the substrates is formed.
or, hereinafter, abbreviated as TFT) and an opposing substrate 20, which is the other substrate disposed opposite to the array substrate 10.

A pixel electrode 9a is provided on a TFT array substrate 10.
A plurality of pixel switching TFTs 30 for controlling the pixel electrodes 9a are formed in a matrix, and a data line 6a for supplying an image signal is electrically connected to the source region 1d of the TFT 30 through the contact hole 5. I have. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and is configured to sequentially apply a scanning signal to the scanning line 3a in a pulsed manner at a predetermined timing. The pixel electrode 9a is electrically connected to the drain region 1e of the pixel switching TFT 30 through the contact hole 8, and is supplied from the data line 6a by closing the pixel switching TFT 30 as a switching element for a certain period of time. The written image signal is written at a predetermined timing.

An image signal of a predetermined level written in the liquid crystal via the pixel electrode 9a is held for a certain period between the counter electrode 21 formed on the counter substrate 20, and the held image signal is usually In order to prevent leakage, a storage capacitor is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21. Here, as a method of forming a storage capacitor, a capacitor line 3b which is a wiring for forming a capacitor is provided. An alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided on the pixel electrode 9a.

[0005] As shown in FIG.
A first light-shielding film 11a made of WSi (tungsten silicide) is provided at a position corresponding to each pixel switching TFT 30 on the 0 surface.

The first light-shielding film 11a is used for returning light and the like from the TFT array substrate 10 to the pixel switching TFT.
This prevents the light from entering the 30 channel regions 1a 'and LDD regions 1b and 1c.

A first interlayer insulating film (insulator layer) for electrically insulating the semiconductor layer 1a from the first light shielding film 11a is provided between the first light shielding film 11a and the pixel switching TFT 30.
12 are provided. Further, on the scanning line 3a, the insulating film 2
On the TFT array substrate 10 including the upper portion, a second interlayer insulating film 4 in which a contact hole 5 leading to the high-concentration source region 1d and a contact hole 8 leading to the high-concentration drain region 1e are formed, respectively. Further, on the data line 6a and the second interlayer insulating film 4, a third interlayer insulating film 7 in which a contact hole 8 leading to the high concentration drain region 1e is formed.

In this liquid crystal device, the insulating thin film 2 extends from a position facing the scanning line 3a and is used as a dielectric film, and the semiconductor film 1a extends and serves as a first storage capacitor electrode 1f. A storage capacitor 70 is formed by using a part of the opposing capacitor line 3b as a second storage capacitor electrode.

On the other hand, a counter electrode (common electrode) 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode (common electrode). Have been. Further, the opposing substrate 20 is provided with a second light shielding film 23 in a region other than the display region of each pixel. The second light-shielding film 23 is provided so that the incident light from the side of the counter substrate 20 can be applied to the channel region 1a ′, the source region 1b,
d, for preventing intrusion into the drain regions 1c, 1e, etc., and is also called a black matrix.

Each substrate has such a structure, and the TF is arranged so that the pixel electrode 9a and the counter electrode 21 face each other.
Liquid crystal is sealed between the T array substrate 10 and the opposing substrate 20, and a liquid crystal layer 50 is formed.

[0011]

However, in such a liquid crystal device using the first light-shielding film 11 made of WSi, a light-shielding film having a high light-shielding property is desired.

In a liquid crystal device having a switching element, there is a problem that light leakage current of the switching element due to return light is generated, which adversely affects the switching characteristics of the element and degrades the characteristics of the device. In particular, when this liquid crystal device is used in a device using a strong light source such as a projector, there is a problem since a light leakage current due to return light is likely to occur.

To solve this problem, it has been proposed to form the first light-shielding film 11a using Ti (titanium), which is a material having excellent light-shielding properties. However, after forming the first light-shielding film 11a, an insulating film is formed,
When a high-temperature processing step exceeding 500 ° C., such as an annealing processing for forming a switching element, is performed,
The Ti, which is the first light-shielding film 11a, chemically reacts with an insulating film such as SiO ₂ containing an oxygen element facing the Ti to form an oxide film. The formation of the oxide film causes a problem that the light shielding performance of Ti is reduced. For this reason, sufficient light-shielding performance may not be obtained even when Ti is used.

The present invention has been made to solve the above-mentioned problems, and has as its object to provide a light-shielding film having excellent light-shielding performance.

It is another object of the present invention to provide an electro-optical device substrate provided with the above-described light-shielding film, a method of manufacturing the electro-optical device substrate, an electro-optical device, and electronic equipment.

[0016]

(1) In order to achieve the above object, a pair of substrates sandwiching an electro-optical material, a switching element provided on one of the substrates, and a switching element facing the switching element. In the electro-optical device having a light-shielding film provided at a position, the light-shielding film is a high-melting metal element or a metal layer made of a metal compound, and an oxygen-free system laminated on at least one surface of the metal layer. A barrier layer made of a high melting point metal or metal compound is provided.

According to this electro-optical device, even if the high-temperature treatment is performed after the formation of the light shielding film, the SiO.
_The barrier layer made of oxygen-free high-melting metal or metal compound of the light-shielding film facing the insulating film such as ₂ suppresses the oxidation of the metal layer of the light-shielding film, and as a result, the light-shielding performance of the light-shielding film Can be secured.

The thickness of the light shielding film is the same as that of the conventional single WS
The thickness can be reduced as compared with the light shielding film using i. Thus, it is possible to reduce an increase in the level difference between the region where the light shielding film is formed and the region where the light shielding film is not formed. (2) In the electro-optical device according to the present invention, the light-shielding film is disposed between the one substrate and the switching element, and the barrier layer of the light-shielding layer faces the switching element. .

According to this structure, even if an insulating film is formed on the barrier layer and a high-temperature heat treatment is performed, it is possible to prevent the metal layer from being oxidized and the permeability from being lowered. (3) In the electro-optical device according to the present invention, the light-shielding film is disposed on the switching element on the electro-optical material side.

According to this configuration, it is possible to prevent the light from one of the substrates from irradiating the switching element. (4) In the electro-optical device according to the present invention, the metal layer of the light-shielding film includes a light-shielding metal layer and a light-absorbing metal layer, and the light-absorbing metal layer has a surface facing the switching element. It is characterized by doing.

According to this structure, the switching element is prevented from being irradiated with light by the light-shielding metal layer, and the light is absorbed by the light-absorbing metal layer on the switching element side and internal reflection is suppressed. Can be. (5) In the electro-optical device according to the present invention, the metal layer is sandwiched between the barrier layers.

According to this configuration, in manufacturing the electro-optical device, even if a high-temperature heat treatment is performed, it is possible to prevent the metal layer from being oxidized by the barrier layer, so that the original light shielding property of the metal layer can be maintained. . (6) Further, the electro-optical device according to the present invention includes the following:
The display area of the pixel is defined, and a metal layer of a high melting point metal or a metal compound and a barrier layer of an oxygen-free high melting point metal or a metal compound laminated on at least one surface of the metal layer. A light-shielding film formed on the substrate.

According to this configuration, the performance of blocking light from the other substrate can be further improved. (7) In the electro-optical device according to the aspect of the invention, the light shielding film may include:
It is characterized by being connected to a fixed potential.

According to this structure, since the potential of the light-shielding film can be made low, it is possible to prevent noise from being applied to the switching element. (8) In the electro-optical device according to the present invention, it is preferable that the barrier layer is made of one of a nitrogen compound, a silicon compound, a tungsten compound, tungsten, and silicon. (9) Preferably, the barrier layer in the electro-optical device of the present invention is WSi. (10) Preferably, the metal layer in the electro-optical device of the present invention is Ti. (11) In the electro-optical device according to the present invention, the barrier layer is formed on an upper surface and a lower surface of the metal layer, and a thickness of the upper barrier layer is larger than a thickness of the lower barrier layer. .

According to this structure, the insulating film is formed on the upper barrier layer, so that the metal layer can be prevented from being oxidized even when subjected to a high-temperature heat treatment, and the light-shielding film can be prevented from being unnecessarily thick. . (12) As a typical example, the thickness of the metal layer is 30 nm to 50 nm, the thickness of the upper barrier layer is 30 nm to 100 nm, and the thickness of the lower barrier layer is 10 nm to 20 nm. Desirably. (13) Further, the electro-optical device of the present invention can be applied as electronic equipment.

With such an electronic device, an electronic device in which light leakage current hardly occurs even when a strong light source is used can be obtained. (14) The electro-optical device substrate according to the present invention is a substrate for an electro-optical device having a light-shielding film provided on an insulating substrate, wherein the light-shielding film comprises a metal layer made of a high melting point elemental metal or a metal compound. A barrier layer made of an oxygen-free high melting point metal or metal compound laminated on at least one surface of the metal layer.

According to this structure, even if a high-temperature treatment is performed after the formation of the light-shielding film, an oxygen-free high-melting metal or metal compound of the light-shielding film facing the insulating film such as SiO ₂ containing an oxygen element. Oxidation of the metal layer of the light-shielding film is suppressed by the barrier layer made of, so that the light-shielding performance of the light-shielding film can be secured. (15) The method of manufacturing an electro-optical device substrate according to the present invention is the method of manufacturing an electro-optical device substrate having a light-shielding film provided on an insulating substrate. A step of forming a metal layer by forming a metal compound, a step of forming a barrier layer by forming an oxygen-free high melting point metal or a metal compound on the metal layer, and a step of forming a barrier layer on the barrier layer. And a step of forming an insulating film by forming an insulating material.

According to this structure, even if a high-temperature treatment is performed after the formation of the light-shielding film, an oxygen-free high melting point metal or metal compound of the light-shielding film facing the insulating film such as SiO ₂ containing an oxygen element. The occurrence of the oxidation phenomenon of the metal layer of the light-shielding film can be suppressed by the barrier layer composed of.

The thickness of the light-shielding film can be made smaller than that of a conventional light-shielding film using WSi. As a result, according to the light-shielding film of the present invention, the etching time in the light-shielding film forming process can be reduced as compared with the conventional light-shielding film, and the film formation used for forming the light-shielding film can be shortened. It is possible to extend the life of the target and reduce the amount of gas. (16) Further, in the method of manufacturing a substrate for an electro-optical device according to the present invention, before forming the metal layer, forming an oxygen-free high melting point metal or metal compound on the insulating substrate. A step of forming a barrier layer.

According to this structure, even if a high-temperature heat treatment is performed, the metal layer can be prevented from being oxidized by the barrier layer, so that the original light shielding property of the metal layer can be maintained. (17) In the method of manufacturing a substrate for an electro-optical device according to the present invention, the step of forming the insulating film may be performed at 500 ° C. or higher.
The method includes a step of performing a heat treatment at 100 ° C. or less.

According to this structure, the light-shielding film can be formed before the high-temperature treatment (before forming the element) without deteriorating the light-shielding property of the light-shielding film. (18) The light-shielding film of the present invention is a barrier made of a metal layer that is a high-melting-point metal element or a metal compound, and an oxygen-free high-melting-point metal or metal compound laminated on at least one surface of the metal layer. It is characterized by comprising a layer.

According to this light-shielding film, even if a high-temperature treatment is performed after the light-shielding film is formed, an oxygen-free high melting point metal or metal of the light-shielding film facing the insulating film such as SiO ₂ containing an oxygen element. The barrier layer made of the compound suppresses the occurrence of the oxidation phenomenon of the metal layer of the light shielding film, and as a result, the light shielding performance of the light shielding film can be secured.

The thickness of the light-shielding film can be made smaller than that of a conventional light-shielding film using WSi. As a result, according to the light-shielding film of the present invention, the etching time in the light-shielding film forming process can be reduced as compared with the conventional light-shielding film, and the film formation used for forming the light-shielding film can be shortened. It is possible to extend the life of the target and reduce the amount of gas. (19) Preferably, the barrier layer in the light-shielding film of the present invention is made of one of a nitrogen compound, a silicon compound, a tungsten compound, tungsten, and silicon. (20) In the light-shielding film of the present invention, the nitrogen compound of the barrier layer is SiN, TiN, WN, MoN, Cr.
N is desirable. (21) Further, the silicon compound of the barrier layer in the light-shielding film of the present invention is TiSi, WSi, MoSi, Co
Desirably, either Si or CrSi is used. (22) Further, the tungsten compound of the barrier layer in the light-shielding film of the present invention is desirably one of TiW and MoW.

In the light-shielding film of the present invention, the material forming the metal layer is obtained by using the above-mentioned materials for the nitrogen compound, the silicon compound and the tungsten compound of the refractory metal forming the barrier layer. Oxidation with the insulating film facing the light-shielding film can be suppressed more effectively. Thus, it is possible to provide a light-shielding film in which a decrease in light-shielding performance does not easily occur even in higher temperature processing. (23) In the light-shielding film of the present invention, the metal alone of the metal layer may be Ti, W, Mo, Co, Cr, Hf, Ru.
It is desirable to be either. (24) Preferably, the metal compound of the metal layer in the light-shielding film of the present invention is any one of TiN, TiW, and MoW.

In the light-shielding film of the present invention, the light-shielding film having more excellent light-shielding performance can be obtained by using the above-mentioned materials for the metal simple substance and the metal compound, respectively. (25) The thickness of the barrier layer in the light-shielding film of the present invention is desirably 1 to 200 nm.

With such a light-shielding film, it is possible to sufficiently prevent the light-shielding performance from being lowered by the high-temperature treatment. In particular, when the thickness is 150 nm or less, a high-quality light-shielding film having a small amount of warpage with respect to the substrate can be provided. In the case of non-doped polysilicon, warping hardly occurs even with a film thickness of 150 nm or more. (26) The thickness of the metal layer in the light shielding film of the present invention is 10 to 200 nm.

According to this configuration, a light-shielding film having a small thickness can be provided. In particular, in a liquid crystal device, a step on the alignment film surface due to the height of the light-shielding film can be reduced, and defective alignment of the liquid crystal can be reduced. (27) The metal layer in the light-shielding film of the present invention is characterized in that the barrier layer is laminated on both surfaces.

In the light-shielding film of the present invention, the barrier layer is laminated on both surfaces of the metal layer.

With such a light-shielding film, both sides of the metal layer can be protected by the barrier layer, and the material forming the metal layer can be more effectively prevented from becoming an oxygen compound. be able to. Therefore, it is possible to obtain a light-shielding film in which the light-shielding performance hardly deteriorates due to the high-temperature treatment. (28) Further, the metal layer in the light-shielding film of the present invention is characterized by comprising a light-reflective metal layer and a light-absorbing metal layer.

By using such a light-shielding film, a light-shielding film having a function of reflecting light and absorbing light can be provided. (29) Preferably, the light-absorbing metal layer in the light-shielding film of the present invention is a nitride compound. (30) The light-shielding metal layer in the light-shielding film of the present invention may be configured by laminating the light-absorbing metal layer on both surfaces thereof. (31) The light-shielding film according to the present invention further includes a metal layer that is a high-melting-point metal element or a metal compound, and a high-melting-point metal that protects oxidation of the metal layer laminated on at least one surface of the metal layer. Alternatively, a protective layer made of a metal compound may be provided.

[0041]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] A first embodiment of the present invention will be described below with reference to FIGS.

In the first embodiment of the present invention, the light-shielding film of the present invention is applied to a liquid crystal device as an example of a light-shielding film of the present invention, a substrate for an electro-optical device having the light-shielding film, and an electro-optical device. It is an example.

FIG. 1 is an equivalent circuit of various elements, wiring, etc. in a plurality of pixels formed in a matrix forming an image forming area (pixel section) of a liquid crystal device. FIG.
FIG. 3 is an enlarged plan view showing a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, light-shielding films, and the like are formed. FIG. 3 is a sectional view taken along line AA ′ of FIG. In FIG. 3, the scale of each layer and each member is different so that each layer and each member have a size recognizable in the drawing.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area (pixel portion) of the liquid crystal device according to the present embodiment are composed of a plurality of pixel electrodes 9a and a plurality of pixel electrodes 9a formed in a matrix. TFT for control
(Transistor element) 30, and the data line 6 a to which an image signal is supplied is electrically connected to the source of the TFT 30. Image signal S to be written to data line 6a
, Sn may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Also, T
The scanning line 3a is electrically connected to the gate of the FT 30, and is configured to apply the scanning signals G1, G2,..., Gm in a pulsed manner to the scanning line 3a in this order at a predetermined timing. ing. The pixel electrode 9a is a TFT 30
Of the TFT 30 which is a switching element and is closed by a switch for a predetermined period, so that the image signal S supplied from the data line 6a is provided.
1, S2,..., Sn are written at a predetermined timing.

The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal via the pixel electrodes 9a are provided for a certain period between the image signals S1, S2,..., And Sn formed on the opposite substrate (described later). Will be retained. In liquid crystals, the orientation and order of molecular assemblies change according to the applied voltage level.
Modulates light to enable gradation display. In the normally white mode, the amount of incident light transmitted to the liquid crystal portion decreases according to the applied voltage. In the normally black mode, the amount of incident light to the liquid crystal portion decreases according to the applied voltage. The amount of transmitted light increases, and light having a contrast corresponding to the image signal is emitted from the liquid crystal device as a whole. Here, in order to prevent the held image signal from leaking,
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the pixel electrode 9a
Is held by the storage capacitor 70 for a time three digits longer than the time when the voltage is applied to the data line. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized. In the present embodiment, in particular, in order to form such a storage capacitor 70, a capacitor line 3b having the same resistance as the scanning line or a low resistance using a conductive light-shielding film is provided as described later.

Next, the planar structure in the pixel portion (image display area) of the TFT array substrate will be described in detail with reference to FIG. As shown in FIG. 2, a plurality of transparent pixel electrodes 9a (indicated by dotted lines 9a 'are shown in a matrix) in a pixel portion on the TFT array substrate of the liquid crystal device.
Are provided, and the data line 6a, the scanning line 3a, and the capacitor line 3b are provided along the vertical and horizontal boundaries of the pixel electrode 9a. The data line 6a is electrically connected to the source region of the semiconductor layer 1a of the single crystal silicon layer via the contact hole 5, and the pixel electrode 9a is connected to the drain region of the semiconductor layer 1a via the contact hole 8. Is electrically connected to Further, the scanning line 3a is arranged so as to face a channel region (a hatched region on the right in the figure) of the semiconductor layer 1a, and the scanning line 3a functions as a gate electrode.

The capacitor line 3b has a main line portion extending substantially linearly along the scanning line 3a (that is, the scanning line 3a in a plan view).
(A first region formed along the data line 6a) and a protruding portion (upward in the figure) protruding along the data line 6a from a location intersecting the data line 6a (that is, the data line 6a extending along the second region 6a).

A plurality of first light-shielding films 111 are provided in a region shown by oblique lines rising to the right in the drawing. More specifically, the first light-shielding film 111 is provided at a position covering the TFT including the channel region of the semiconductor layer 1a in the pixel portion as viewed from the side of the TFT array substrate. A main line portion extending linearly along the scanning line 3a opposite to the main line portion, and a protruding portion protruding from a location intersecting the data line 6a to a subsequent stage adjacent to the data line 6a (ie, downward in the drawing). And First light shielding film 11
The tip of the downward protruding part in each stage (pixel row) 1 is:
Under the data line 6a, it overlaps with the tip of the upward projection of the capacitance line 3b in the next stage. A contact hole 13 for electrically connecting the first light-shielding film 111 and the capacitor line 3b to each other is provided in the overlapping portion. That is, in the present embodiment, the first light-shielding film 111 is electrically connected to the preceding or subsequent fixed-potential capacitance line 3 b through the contact hole 13.

In this embodiment, the first light shielding film 111
Is a region outside the pixel portion that does not require light shielding (a peripheral region of the pixel portion), that is, a seal region for applying a sealing material for bonding the counter electrode substrate, and an input / output signal line. A similar pattern is formed two-dimensionally in a terminal pad area where mounting terminals for connection are formed. Accordingly, when the insulator layer formed on the first light-shielding film 111 is polished and flattened, the unevenness in the pixel portion and the peripheral region of the pixel portion become substantially the same, so that the flattening is performed uniformly. Thus, the single crystal silicon layers can be bonded to each other in a favorable state.

Next, a sectional structure in the pixel portion of the liquid crystal device will be described with reference to FIG. As shown in FIG. 9, the liquid crystal device includes a TFT array substrate 10 which constitutes an example of a light-transmitting substrate, and a transparent counter substrate 20 which is disposed to face the TFT array substrate. The TFT array substrate 10 is made of, for example, a quartz substrate or hard glass,
Is made of, for example, a glass substrate or a quartz substrate. The pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO film (indium tin oxide film). The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode (common electrode) 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode (common electrode). Is provided. The counter electrode 21 is, for example,
It is made of a transparent conductive film such as an ITO film. Also, the alignment film 2
2 comprises an organic film such as a polyimide film.

As shown in FIG. 9, each pixel electrode 9a is provided on the TFT array substrate 10 at a position adjacent to each pixel electrode 9a.
Pixel switching TFT3 for switching control of a
0 is provided.

As shown in FIG. 9, the opposing substrate 20 is provided with a second light-shielding film 23 in a region other than the opening region of each pixel portion. The second light-shielding film 23 is provided so that the incident light from the side of the opposing substrate 20 receives the channel region 1 a ′ of the semiconductor layer 1 a of the pixel switching TFT 30 or an LDD (Lightly Doped).
Drain) to prevent invasion into the regions 1b and 1c. Further, the second light-shielding film 23 has a function of improving contrast, preventing color mixture of color materials, and the like.

Between the TFT array substrate 10 and the opposing substrate 20 having the above-described structure, in which the pixel electrode 9a and the opposing electrode 21 face each other, liquid crystal is filled in a space surrounded by the sealing material 52. The liquid crystal layer 50 is formed by being sealed. The liquid crystal layer 50 assumes a predetermined alignment state by the alignment films 16 and 22 when no electric field is applied from the pixel electrode 9a. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material 52 is, for example, an adhesive made of a photo-curing resin or a thermosetting resin for bonding the two substrates 10 and 20 around them, and for setting the distance between the two substrates to a predetermined value. Spacers such as glass fiber or glass beads.

As shown in FIG. 3, the TFT array substrate 10
A first light-shielding film 111 is provided at a position on the surface corresponding to each pixel switching TFT 30. The first light-shielding film 111 includes a metal layer M1 provided on the TFT array substrate 10 and a barrier layer B1 provided on the metal layer M1.
It consists of:

The barrier layer B1 is made of an oxygen-free high-melting point metal or metal compound having no oxygen element. This barrier layer B
1 is made of one of a nitrogen compound, a silicon compound, a tungsten compound, tungsten, and silicon.

As the nitrogen compound, SiN (silicon nitride), TiN (titanium nitride), WN (tungsten nitride), MoN (molybdenum nitride), CrN (chromium nitride) and the like are preferably used. Further, as the silicon compound, TiSi (titanium silicide), WSi
(Tungsten silicide), MoSi (molybdenum silicide), CoSi (cobalt silicide), CrS
i (chromium silicide) or the like is preferably used. As the tungsten compound, TiW (titanium tungsten), MoW (molybdenum tungsten) or the like is preferably used. As the silicon, non-doped silicon is preferably used.

The thickness of the barrier layer B1 is 1 to 200 nm.
If the thickness is 30 to 50 nm, it can function as a barrier with a small film thickness and can suppress irregular reflection. When the thickness of the barrier layer B1 is less than 3 nm, there is a tendency that it is not possible to sufficiently prevent the light-shielding performance from being reduced due to oxidation of the metal layer due to the high-temperature treatment. on the other hand,
When the thickness of the barrier layer B1 exceeds 150 nm, T
The amount of warpage of the FT array substrate 10 tends to increase.
Unless the display quality of the liquid crystal device is affected, 200 nm
May be. This barrier layer B1 is also a protective layer for protecting the metal layer from oxidation.

The metal layer M1 is a simple metal or a metal compound having a light-shielding property. If the metal layer M1 becomes an oxygen compound due to a chemical reaction with an insulating layer of SiO ₂ , the light-shielding property is deteriorated. Or one of them.

As the metal simple substance, Ti (titanium),
W (tungsten), Mo (molybdenum), Co (cobalt), Cr (chromium), Hf (hafnium), Ru
(Ruthenium) and the like are preferably used. Further, as the metal compound, TiN (titanium nitride), TiW
(Titanium tungsten), MoW (molybdenum tungsten) and the like are preferably used.

The thickness of the metal layer M1 is 10 to 200 nm.
It is desirable that The thickness of the metal layer M1 is 10 nm
If the ratio is less than 10%, the light-shielding performance may be insufficient. On the other hand, if the thickness of the metal layer M1 exceeds 200 nm, the amount of warpage of the TFT array substrate 10 increases, which may undesirably lower the quality of the liquid crystal device.

A first interlayer insulating film (insulator layer) 12 is provided between the first light-shielding film 111 and the plurality of pixel switching TFTs 30. First interlayer insulating film 12
Is provided to electrically insulate the semiconductor layer 1a constituting the pixel switching TFT 30 from the first light shielding film 111. Further, the first interlayer insulating film 12
It is formed on the entire surface of the TFT array substrate 10, and its surface is polished and flattened in order to eliminate a step in the pattern of the first light shielding film 111.

The first interlayer insulating film 12 is made of, for example, NSG
(Non-doped silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass),
It is made of a highly insulating glass such as BPSG (boron phosphorus silicate glass), a silicon oxide film, a silicon nitride film, or the like. The first interlayer insulating film 12 can prevent the first light shielding film 111 from contaminating the pixel switching TFT 30 and the like.

In this embodiment, the gate insulating film 2 is used as a dielectric film by extending from a position facing the scanning line 3a.
The storage capacitor 70 is formed by extending the semiconductor film 1a to form a first storage capacitor electrode 1f, and further forming a part of the capacitor line 3b opposed thereto as a second storage capacitor electrode.

More specifically, the high-concentration drain region 1e of the semiconductor layer 1a extends below the data line 6a and the scanning line 3a, and extends in the same manner as the data line 6a and the scanning line 3a. The first storage capacitor electrode (semiconductor layer) 1f is opposed to the first storage capacitor electrode with the insulating film 2 interposed therebetween.
In particular, the insulating film 2 as a dielectric of the storage capacitor 70 is formed on the TFT 30 formed on the single crystal silicon layer by high-temperature oxidation.
Since the gate insulating film 2 is nothing but a thin and high withstand voltage insulating film, the storage capacitor 70 can be configured as a large-capacity storage capacitor with a relatively small area.

Further, in the storage capacitor 70, as can be seen from FIGS.
On the opposite side of the capacitance line 3b as a storage capacitance electrode, the first
The storage capacitor electrode 1f is disposed so as to face the storage capacitor electrode 1f as a third storage capacitor electrode via the first interlayer insulating film 12 (see the storage capacitor 70 on the right side in FIG. 3), so that the storage capacitor is further provided. I have. That is, in the present embodiment, the first
A double storage capacity structure is provided in which storage capacity is provided on both sides of the storage capacity electrode 1f, and the storage capacity further increases. Therefore, the function of the liquid crystal device for preventing flicker and burn-in in a display image is improved.

As a result, the space below the opening area, that is, the area under the data line 6a and the area where the liquid crystal disclination occurs along the scanning line 3a (ie, the area where the capacitance line 3b is formed) is effective. To increase the storage capacitance of the pixel electrode 9a.

In the present embodiment, the first light shielding film 111 (and the capacitance line 3b electrically connected thereto) is electrically connected to a constant potential source, and the first light shielding film 111 and the capacitance line 3b Is a constant potential. Therefore, the pixel switching TFT 30 that is disposed to face the first light shielding film 111
On the other hand, the fluctuation of the potential of the first light-shielding film 111 does not adversely affect. Further, the capacitance line 3b can function well as a second storage capacitor electrode of the storage capacitor 70. In this case, as the constant potential source, a constant potential source such as a negative power supply or a positive power supply supplied to a peripheral circuit (for example, a scanning line driving circuit, a data line driving circuit, or the like) for driving the liquid crystal device, a ground power supply And a constant potential source supplied to the counter electrode 21. By using a power supply such as a peripheral circuit, the first light-shielding film 111 and the capacitor line 3b can be set to a constant potential without providing a dedicated potential wiring or an external input terminal.

As shown in FIGS. 2 and 3, in the present embodiment, the first light shielding film 11 is formed on the TFT array substrate 10.
1, the first light-shielding film 111 is configured to be electrically connected to the preceding or subsequent capacitive line 3b via the contact hole 13. Therefore,
Compared to the case where each first light-shielding film 111 is electrically connected to the next-stage capacitance line,
The capacitance line 3b and the first light-shielding film 11 overlap with the data line 6a.
The step in the region where 1 is formed with respect to the other region can be reduced. When the steps along the edge of the opening area of the pixel portion are small, disclination (poor alignment) of the liquid crystal caused by the steps can be reduced, so that the opening area of the pixel portion can be expanded. Become.

The first light-shielding film 111 has the contact hole 13 formed in a protruding portion protruding from the main line extending linearly as described above. Here, it has been found that, as the opening of the contact hole 13, the closer to the edge, the more difficult it is for cracks to occur, for example, because stress is diverted from the edge. Therefore, the stress applied to the first light-shielding film 111 during the manufacturing process depends on how close to the tip of the protruding portion the contact hole 13 is opened (preferably, depending on how close the tip is to the margin). Is alleviated, cracks can be more effectively prevented, and the yield can be improved.

The capacitor line 3b and the scanning line 3a are made of the same polysilicon film. The dielectric film of the storage capacitor 70 and the gate insulating film 2 of the TFT 30 are made of the same high-temperature oxide film. The storage capacitor electrode 1f, the channel forming region 1a and the source region 1d, and the drain region 1 of the TFT 30.
e and the like are composed of the same semiconductor layer 1a. Therefore, T
The laminated structure formed on the FT array substrate 10 can be simplified, and furthermore, in the method of manufacturing a liquid crystal device, the capacitor line 3b and the scanning line 3a can be formed simultaneously in the same thin film forming step. And the gate insulating film 2 can be formed simultaneously.

Further, as shown in FIG. 2, the first light-shielding films 111 extend along the scanning lines 3a, and are divided into a plurality of stripes in the direction along the data lines 6a. ing. For this reason, for example, as compared with a case where a lattice-shaped light-shielding film integrally formed around the opening region of each pixel portion is provided, the first light-shielding film 111, the scanning line 3a, the capacitor line 3b, and the data In the laminated structure of the liquid crystal device including the line 6a, the interlayer insulating film, and the like, the stress generated due to the heating and cooling during the manufacturing process due to the difference in the physical properties of each film is remarkably reduced. Therefore, it is possible to prevent the occurrence of cracks in the first light-shielding film 111 and the like and to improve the yield.

In FIG. 2, the linear main line portion of the first light-shielding film 111 is formed so as to substantially overlap the linear main line portion of the capacitor line 3b. If it is provided at a position that covers the channel region of the TFT 30 and overlaps with the capacitor line 3b at any point so that the contact hole 13 can be formed, TF
It is possible to exhibit a light blocking function for T and a low resistance function for the capacitance line. Therefore, for example, the first light-shielding film 111 is provided even in a longitudinal gap region along the scanning line between the adjacent scanning line 3a and the capacitor line 3b, or even at a position slightly overlapping with the scanning line 3a. You may.

The capacitance line 3 b and the first light shielding film 111 are
Although the electrical connection is made reliably and with high reliability via the contact hole 13 opened in the interlayer insulating film 12, such a contact hole 13 may be opened for each pixel. The holes may be opened for each pixel group including a plurality of pixels.

When the contact hole 13 is opened for each pixel, the resistance of the capacitance line 3b can be reduced by the first light shielding film 111, and the degree of the redundant structure between the two can be increased. On the other hand, when the contact hole 13 is opened for each pixel group including a plurality of pixels (for example, for every two pixels or for every three pixels), the sheet resistance of the capacitor line 3b and the first light shielding film 111, the driving frequency, And the capacitance line 3 by the first light-shielding film 111 in consideration of required specifications and the like.
b, the advantage of lowering the resistance and the redundant structure, and the adverse effects of complicating the manufacturing process due to the formation of a large number of contact holes 13 or making the liquid crystal device defective can be appropriately balanced. It is.

The contact hole 13 provided for each pixel or each pixel group is opened below the data line 6a when viewed from the counter substrate 20 side.
For this reason, the contact hole 13 is provided in the portion of the first interlayer insulating film 12 where the TFT 30 and the first storage capacitor electrode 1f are not formed outside the opening region of the pixel portion. It is possible to prevent the TFT 30 and other wiring from becoming defective due to the formation of the contact hole 13 while effectively utilizing the same.

In FIG. 3, the pixel switching TFT 30 has an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a. Area 1
a ', gate insulating film 2 for insulating scanning line 3a from semiconductor layer 1a, data line 6a, low-concentration source region (source-side LDD region) 1b and low-concentration drain region (drain-side LDD region) 1c of semiconductor layer 1a , A high concentration source region 1d and a high concentration drain region 1e of the semiconductor layer 1a.

A corresponding one of the plurality of pixel electrodes 9a is connected to the high-concentration drain region 1e. Source regions 1b and 1d and drain regions 1c and 1e
Is formed by doping the semiconductor layer 1a with an n-type or p-type dopant at a predetermined concentration depending on whether an n-type or p-type channel is formed. An n-type channel TFT has the advantage of a high operating speed, and is a pixel switching TFT which is a pixel switching element.
Often used as 30. The data line 6a
1 and a light-shielding thin film such as an alloy film such as a metal silicide. On the scanning line 3a, the gate insulating film 2, and the first interlayer insulating film 12, a contact hole 5 leading to the high-concentration source region 1d and a contact hole 8 leading to the high-concentration drain region 1e are respectively formed. An interlayer insulating film 4 is formed. Via the contact hole 5 to the source region 1b, the data line 6a
Are electrically connected to the high concentration source region 1d. Further, a third interlayer insulating film 7 having a contact hole 8 to the high-concentration drain region 1e is formed on the data line 6a and the second interlayer insulating film 4. The pixel electrode 9a is electrically connected to the high-concentration drain region 1e via the contact hole 8 to the high-concentration drain region 1e. The above-described pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 7 configured as described above. The pixel electrode 9a and the high-concentration drain region 1e may be electrically connected to each other by relaying the same Al film as the data line 6a or the same polysilicon film as the scanning line 3b.

The pixel switching TFT 30 preferably has the LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned TFT in which impurity ions are implanted at a high concentration using 3a as a mask to form high-concentration source and drain regions in a self-aligned manner may be used.

Further, the single gate structure in which only one gate electrode (scanning line 3a) of the pixel switching TFT 30 is arranged between the source-drain regions 1b and 1e is used, but two or more gate electrodes are provided between them. It may be arranged. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a double gate or a triple gate or more as described above, a leak current at a junction between a channel and a source-drain region can be prevented, and a current in an off state can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-state current can be further reduced, and a stable switching element can be obtained.

Here, in general, a single-crystal silicon layer such as the channel region 1a 'low-concentration source region 1b and the low-concentration drain region 1c of the semiconductor layer 1a generates a photocurrent due to the photoelectric conversion effect of silicon when light enters. Although this occurs, the transistor characteristics of the pixel switching TFT 30 change. In this embodiment, at least the data line 6a is formed of a light-shielding metal thin film such as Al so as to cover the scanning line 3a from above. It is possible to effectively prevent incident light from entering the channel region 1a 'and the LDD regions 1b and 1c of the semiconductor layer 1a. Also, as mentioned above,
Since the first light shielding film 111 is provided below the pixel switching TFT 30, at least the semiconductor layer 1a
Of the return light to the channel region 1a 'and the LDD regions 1b and 1c can be effectively prevented. The semiconductor material of the switching TFT 30 has a polycrystalline structure or a single crystal structure. When forming a single crystal semiconductor,
After the single crystal substrate and the supporting substrate are bonded to each other, a bonding method in which the single crystal substrate side is thinned can be used. Such a structure in which a thin film silicon single crystal is formed on an insulating layer is referred to as SOI (Silicon On Insulato).
r). Also, such a substrate is bonded to SOI
Call.

In this embodiment, since the capacitor line 3b provided in the adjacent preceding or succeeding pixel is connected to the first light-shielding film 111, the uppermost or lowermost pixel is connected to the first pixel. A capacitance line 3b for supplying a constant potential to one light shielding film 111 is required. Therefore, it is preferable to provide one extra capacitor line 3b with respect to the number of vertical pixels.

Next, the manufacturing process of the liquid crystal device having the above configuration will be described.

First, a TFT array substrate 10 made of a quartz substrate, hard glass or the like is prepared, and a metal layer M1 and a barrier layer B1 are sequentially formed on the entire surface thereof from the bottom by sputtering. Next, a resist mask corresponding to the pattern of the first light-shielding film 111 (see FIG. 2) is formed by photolithography, and the metal layer M1 is interposed via the resist mask.
By etching the barrier layer B1 and FIG.
The first light-shielding film 111 having the pattern shown in FIG. Thereafter, the layers shown in FIG. 3 are formed by a method similar to the conventional method, and the TFT array substrate 10 is formed.

Next, a specific example will be described.

TFT array substrate 1 which is a quartz insulating substrate
After forming a Ti film M1 as a metal layer on the substrate 0, a WSi film B1 is formed as a barrier layer to form a first light shielding film 111. Then, the first interlayer insulating film 12 of NSG is laminated on the first light shielding film 111.

The first interlayer insulating film of NSG is formed on the first light-shielding film 111 at a temperature of 500 ° C. or more, for example, about 680 ° C., and thereafter, at a high temperature of 1100 ° C. or less, for example, about 1000 ° C. for baking. It is formed by heat treatment. In this step, the Ti film M1 is combined with the oxygen element in the quartz insulating substrate 10, while the oxygen element does not exist in the opposite WSi film B1, which is an oxygen-free metal compound.
Can suppress the occurrence of an oxidation phenomenon in which is bonded to an oxygen element. Therefore, it is possible to prevent the transmittance of the Ti film M1 from greatly decreasing. If the WSi film B1 is not formed on the Ti film M1, an oxidation phenomenon occurs in the process of forming the NSG. In this oxidation phenomenon, a chemical reaction becomes more active than when a Ti film is stacked on the quartz TFT array substrate 10, and thus the permeability of the Ti film M1 is greatly reduced.

On the other hand, as the counter substrate 20, a glass substrate or the like is first prepared, and the second light-shielding film 23 is formed through a photolithography step and an etching step after, for example, sputtering metal chromium. Thereafter, the respective layers shown in FIG. 3 are formed by a method similar to the conventional method, and the opposing substrate 20 is formed.

Finally, the T on which each layer is formed as described above
The FT array substrate 10 and the opposing substrate 20 are bonded together by a sealing material so that the alignment films 16 and 22 face each other, and a plurality of types of nematic liquid crystals are mixed in a space between the substrates by vacuum suction or the like. The liquid crystal is sucked to form a liquid crystal layer 50 having a predetermined thickness.

(Overall Configuration of Liquid Crystal Device) The overall configuration of the liquid crystal device of the present embodiment configured as described above will be described with reference to FIGS. FIG. 8 is a plan view of the TFT array substrate 10 together with the components formed thereon viewed from the counter substrate 20 side, and FIG.
FIG. 8 is a sectional view taken along the line HH ′ of FIG.

In FIG. 8, on the TFT array substrate 10, a sealing material 52 is provided along the edge of the counter substrate 20, and in parallel with the inside thereof, for example, the second light shielding film 2 is provided.
A third light-shielding film 53 made of the same or different material as No. 3 is provided as a peripheral parting. The data line driving circuit 101 and the mounting terminal 1 are provided outside the sealing material 52.
02 is provided along one side of the TFT array substrate 10, and the scanning line driving circuit 104
It is provided along the side. When the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side.

The data line driving circuits 101 may be arranged on both sides along the sides of the screen display area. For example, the odd-numbered data lines 6a supply an image signal from a data line driving circuit disposed along one side of the screen display area, and the even-numbered data lines are connected to the opposite side of the screen display area. An image signal may be supplied from a data line driving circuit disposed along the line. If the data lines 6a are driven in a comb-tooth shape in this manner, the area occupied by the data line driving circuit can be expanded, so that a complicated circuit can be formed.

Further, on one remaining side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the screen display area are provided. A precharge circuit may be provided hidden under the third light shielding film 53. Further, at least one of the corners of the opposing substrate 20 has T
A conductive material 106 for providing electrical continuity between the FT array substrate 10 and the counter substrate 20 is provided. And
As shown in FIG. 9, the opposing substrate 20 having substantially the same contour as the sealing material 52 shown in FIG.
It is fixed to the FT array substrate 10.

On the TFT array substrate 10 of the liquid crystal device described above, an inspection circuit or the like for inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or shipping may be further formed. Further, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a driving LSI mounted on a TAB (tape automated bonding substrate) is used. The connection may be made electrically and mechanically via an anisotropic conductive film provided in the peripheral region. Also, the side of the opposite substrate 20 on which the projection light is incident and T
On the side of the FT array substrate 10 from which the emitted light exits,
For example, TN (twisted nematic) mode, S
Depending on operation modes such as TN (super TN) mode, D-STN (dual scan-STN) mode, and normally white mode / normally black mode, a polarizing film, a retardation film, a polarizing means, and the like are provided in a predetermined manner. Arranged in the direction.

When the liquid crystal device described above is applied to, for example, a color liquid crystal projector (projection display device), three liquid crystal devices are used as RGB light valves, and each panel has: The light of each color separated via the dichroic mirror for RGB color separation is respectively incident as projection light. Therefore, in that case, as shown in the above embodiment,
No color filter is provided. However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a where the second light-shielding film 23 is not formed, together with the protective film. In this way, the liquid crystal device of the above embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. In this case, a bright liquid crystal device can be realized by improving the efficiency of collecting incident light. Furthermore,
By depositing a number of interference layers having different refractive indices on the counter substrate 20, a dichroic filter that creates RGB colors using light interference may be formed. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

In the liquid crystal device according to the above-described embodiment, incident light is incident from the side of the counter substrate 20 as in the related art.
Since 11 is provided, incident light may enter from the TFT array substrate 10 side and exit from the counter substrate 20 side. That is, even when the liquid crystal device is attached to the liquid crystal projector in this manner, light can be prevented from entering the channel region 1a 'and the LDD regions 1b and 1c of the semiconductor layer 1a, and a high-quality image can be displayed. It is possible. Here, conventionally, in order to prevent reflection on the back side of the TFT array substrate 10, an anti-reflection AR (Ant) is used.
It was necessary to separately arrange a polarizing means coated with i-reflection or to attach an AR film.
However, in the above embodiment, the first light-shielding film 111 is formed between the surface of the TFT array substrate 10 and at least the channel region 1a 'and the LDD regions 1b and 1c of the semiconductor layer 1a. There is no need to use a coated polarizing means or AR film, or use a substrate obtained by subjecting the TFT array substrate 10 itself to an AR process. Therefore, according to the above embodiment, material costs can be reduced,
Further, when attaching the polarizing means, the yield is not reduced due to dust, scratches and the like, which is very advantageous. In addition, since light resistance is excellent, even if a bright light source is used or polarization conversion is performed by a polarizing beam splitter to improve light use efficiency, image quality deterioration such as crosstalk due to light does not occur.

Further, since such a liquid crystal device is provided with the first light shielding film 111 having the barrier layer B1 and the metal layer M1, the light shielding performance of the first light shielding film 111 is insufficient. A liquid crystal device which does not easily generate light leakage current and can be suitably used for electronic devices having a strong light source can be provided.

That is, since the first light shielding film 111 has the barrier layer B1 on the pixel switching TFT 30 side, after the first light shielding film 111 is formed, the formation of the first interlayer insulating film 12 and the pixel switching Even if a high-temperature treatment such as an annealing treatment for forming the TFT 30 is performed, the surface of the metal layer M1 on the side of the barrier layer B1 is the barrier layer B1 containing no oxygen element, and the metal layer M1 and the first interlayer insulating film 12 are formed.
Oxidation of the first light-shielding film 111 can be prevented, and a decrease in light-shielding performance due to the material forming the metal layer M1 becoming an oxygen compound can be prevented.
Light-shielding performance can be ensured.

Thus, for example, Ti having high light shielding performance
By forming the metal layer M1 with such a material as described above, the first light shielding film 111 having excellent light shielding performance can be obtained.

Further, since the first light-shielding film 111 hardly causes a decrease in light-shielding performance due to the high-temperature treatment and has excellent light-shielding performance, it can be made thinner than a conventional light-shielding film. This makes it possible to shorten the etching time in the step of forming the first light-shielding film 111 as compared with the conventional light-shielding film, and to prolong the life of the film-forming target used when forming the first light-shielding film 111. And the amount of gas can be reduced.

In the first light shielding film 111, the barrier layer B1
By using the high-melting-point metal nitrogen compound, silicon compound, tungsten compound, and silicon as the preferable materials described above, the material forming the metal layer M1 is more likely to become an oxygen compound. The barrier layer B1 can be effectively suppressed, and the first light-shielding film 111 in which the light-shielding performance is hardly deteriorated by the high-temperature treatment can be further increased.

Further, the first light-shielding film 111 having more excellent light-shielding performance can be obtained by using the above-mentioned preferable materials for the metal simple substance or the metal compound as the material for forming the metal layer M1.

In particular, the material forming the barrier layer B1 is
WSi, MoSi, TiSi, CoSi, or CrSi, and the material forming the metal layer M1 is Ti, M
When any one of o and W is used, the material forming the barrier layer functions as a donor for releasing Si, and the material forming the metal layer M1 functions as an acceptor for accepting Si. Therefore, the physical properties of the barrier layer B1 and the metal layer M1 are changed. Of the barrier layer B1 and the metal layer M
1 is stable, the material forming the metal layer M1 can be more effectively suppressed from becoming an oxygen compound, and the first layer is less likely to cause a decrease in light-shielding performance due to a higher temperature treatment. The light-shielding film 111 can be used.

Further, since the relationship between the barrier layer B1 and the metal layer M1 is stable, cracks are less likely to occur in the first light shielding film 111 due to heating and cooling during the manufacturing process, and the yield can be improved.

Further, the thickness of the barrier layer B1 is set to 1 to 20
By setting the thickness to 0 nm, the amount of warpage of the TFT array substrate 10 becomes relatively small, and a decrease in light-shielding performance due to high-temperature processing can be sufficiently prevented. Therefore, the first light-shielding film 111 can be further improved.

Further, the thickness of the metal layer M1 is set to 10
By setting the thickness to 200 nm, the amount of warpage of the TFT array substrate 10 is reduced, and the TFT array substrate 10 is provided with sufficient light-shielding performance, so that the more excellent first light-shielding film 111 can be obtained.

[Second Embodiment] Hereinafter, a second embodiment of the present invention will be described.
The embodiment will be described with reference to FIG.

This embodiment is different from the above-described first embodiment in that a barrier layer B2 is provided on the TFT array substrate 10 side instead of the first light-shielding film 111 provided in the liquid crystal device shown in FIG. The first light shielding film 112 shown in FIG. 4 in which the metal layer M1 is provided on the barrier layer B2 is provided.

As described above, this embodiment is different from the first embodiment only in the first light shielding film.
1 shows only the TFT array substrate and the first light-shielding film, and omits other parts that are the same as those in the first embodiment.

In FIG. 4, reference numeral 10 denotes a TFT array substrate 10. On the TFT array substrate 10, a first light shielding layer 112 including a barrier layer B2 and a metal layer M2 provided on the barrier layer B2 is provided.

The barrier layer B2 and the metal layer M2 of the first light-shielding film 112 are made of the same material and the same thickness as the barrier layer B1 and the metal layer M1 of the first light-shielding film 111 shown in the first embodiment. May be formed.

In order to manufacture such a liquid crystal device, first, a TFT array substrate 10 made of a quartz substrate, hard glass or the like is prepared, and a barrier layer B2 and a metal layer M2 are formed on the entire surface thereof by sputtering or CVD. Are formed in order from the bottom. After that, the TFT array substrate 10 is formed by the same method as in the first embodiment. Furthermore, the first
The opposing substrate 20 is formed by the same method as in the above embodiment, and is bonded to the TFT array substrate 10 to form a liquid crystal device.

The first light-shielding film 112 provided in the liquid crystal device has the barrier layer B2.
Even if the high-temperature treatment is performed after the formation of the light shielding film 112, the barrier layer B2 suppresses the surface of the metal layer M2 on the barrier layer B2 side, that is, the surface on the TFT array substrate 10 side from becoming an oxygen compound. Can be prevented from deteriorating due to the material forming the compound being an oxygen compound, and the light shielding performance of the first light shielding film 112 can be ensured. Therefore, it is possible to use, for the metal layer M2, a material which has excellent light-shielding performance but has a problem that the light-shielding performance is deteriorated by high-temperature treatment. A layer M2 can be formed. Thus, the first light-shielding film 112 has excellent light-shielding performance.

If silicon is used as the barrier layer B2, non-doped polysilicon or doped polysilicon may be used. If non-doped polysilicon, peeling of the barrier layer B2 hardly occurs. Therefore,
It may be thicker than 200 nm. Even if the thickness of the doped polysilicon is 1 nm, it is possible to prevent a decrease in light-shielding performance due to oxidation of the metal layer.

Further, since the liquid crystal device of the present embodiment is provided with the first light shielding film 112 having the barrier layer B2 and the metal layer M2, the light shielding performance of the first light shielding film 112 is insufficient. A liquid crystal device which does not easily generate light leakage current and can be suitably used for electronic devices having a strong light source can be provided.

[Third Embodiment] Hereinafter, a third embodiment of the present invention will be described.
The embodiment will be described with reference to FIG.

This embodiment is different from the above-described first embodiment in that a metal layer M3 is replaced by a barrier layer B3 having two layers instead of the first light shielding film 111 provided in the liquid crystal device shown in FIG. , B4, the first light shielding film 113 shown in FIG. 5 is provided. As described above, also in the present embodiment, only the first light-shielding film is different from the first embodiment. Therefore, FIG. 5 illustrates only the TFT array substrate and the first light-shielding film. Other parts that are the same as in the embodiment are omitted.

In FIG. 5, reference numeral 10 denotes a TFT array substrate 10. On the TFT array substrate 10, a first light shielding layer 113 including a barrier layer B4, a metal layer M3 provided on the barrier layer B4, and a barrier layer B3 provided on the metal layer M3 is provided. Is provided.

The barrier layers B3, B of the first light shielding film 113
4 is the first light-shielding film 1 shown in the first embodiment described above.
The barrier layer B1 is preferably formed of the same material as that of the eleventh barrier layer B1. Further, each of the barrier layers B3 and B4 may be formed to have the same thickness as the barrier layer B1 of the first light-shielding film 111 shown in the above-described first embodiment.

The metal layer M of the first light shielding film 113
3 is the first light-shielding film 1 shown in the first embodiment described above.
It may be formed of the same material and the same thickness as the eleventh metal layer M1.

To manufacture such a liquid crystal device, first, a TFT array substrate 10 made of a quartz substrate, hard glass, or the like is prepared, and the barrier layer B4, the metal layer M3, and the barrier layer B3 are formed on the entire surface by sputtering. Are formed in order from the bottom. After that, the TFT array substrate 10 is formed by the same method as in the first embodiment. Furthermore, the first
The opposing substrate 20 is formed by the same method as in the above embodiment, and is bonded to the TFT array substrate 10 to form a liquid crystal device.

In the first light shielding film 113 provided in this liquid crystal device, the metal layer M3 has two barrier layers B
3 and B4, even if high-temperature processing is performed after the first light-shielding film 113 is formed, the metal layer M3 on the side of the TFT array substrate 10 and on the side opposite to the TFT array substrate 10 can be formed. As the surface on both sides becomes an oxygen compound,
Since the barrier layers B3 and B4 suppress the light-shielding performance due to the material forming the metal layer M3 becoming an oxygen compound, it is possible to more effectively prevent the light-shielding performance from being reduced. Performance can be ensured. Therefore, it is possible to use, for the metal layer M3, a material that has excellent light-shielding performance but has a problem that the light-shielding performance is degraded by high-temperature treatment. A layer M3 can be formed. Therefore, the first light shielding film 11 having excellent light shielding performance
It becomes 3.

Next, as a specific example, a Ti film M3 as a metal layer, and WSi films B3 and B4 as upper and lower barrier layers.
The case of the first light-shielding film 113 using the method will be described.

In order to enhance the light-shielding property, it is improved by forming the WSi films B3 and B4 above and below the Ti film M3. However, since the film thickness of the light-shielding film increases, if wirings such as the pixel switching TFT 30 and the data line 6a are stacked,
A step is generated on the surface of the alignment film 16, which leads to a reduction in display quality.

Accordingly, the thickness of the Ti film M3 is set to 30 nm to 5 nm.
0 nm, and W on the lower side, that is, on the TFT array substrate 10 side.
10 nm to 20 nm of the Si film B4, and the upper WSi film B3
Is preferably set to 30 nm to 100 nm. The thickness of the lower WSi film B4 is 2
Compared to the case where a 00 nm WSi film is used as a single light-shielding film, the light-absorbing property is improved and the light-shielding property is improved. Further, the thicker the upper WSi film B3 is, the more the light-shielding property is improved.
Light shielding properties can be ensured even with a film thickness of 100 nm. According to such a first light-shielding film 113, 40
Since light having a wavelength range of about 0 nm or less can be reliably blocked, deterioration of the liquid crystal due to blue wavelength components can be reduced.

Further, since the liquid crystal device of the present embodiment is provided with the first light-shielding film 113, light leakage current due to insufficient light-shielding performance of the first light-shielding film 113 is more unlikely to occur. A liquid crystal device which can be suitably used for electronic devices having a more powerful light source can be obtained.

[Fourth Embodiment] Hereinafter, a fourth embodiment of the present invention will be described.
The embodiment will be described with reference to FIG.

This embodiment is different from the third embodiment described above in that the metal layer M3 of the first light shielding film 113 provided in the liquid crystal device shown in FIG. It has a layer structure.

As described above, this embodiment is different from the third embodiment only in the first light shielding film.
Shows only the TFT array substrate and the first light-shielding film, and omits other parts that are the same as in the first embodiment, as in the third embodiment shown in FIG.

In FIG. 6, reference numeral 10 denotes a TFT array substrate 10. On the TFT array substrate 10, a first layer in which a barrier layer B4, a metal layer M6, a metal layer M5, a metal layer M4, and a barrier layer B3 are provided in this order from the bottom.
A light-blocking layer 115 is provided.

The metal layers M5 and M6 are made of a single metal or a metal compound having the same light reflectivity as the metal layers of the first embodiment. The metal layers M4 and M6 sandwiching the metal layer M5 are made of a light absorbing metal compound such as TiN.

The metal layers M4, M of the first light shielding film 115
It is preferable that the total thickness of M5 and M6 is formed to be the same thickness as the metal layer M1 of the first light-shielding film 111 shown in the first embodiment.

The barrier layer B of the first light shielding film 115
3 and B4 may be formed of the same material and thickness as the barrier layers B3 and B4 of the first light-shielding film 113 shown in the above-described third embodiment.

Further, any one of WSi, MoSi, TiSi and CoSi is used as a material for forming the barrier layers B3 and B4, and three metal layers M4, M5 and MSi are formed.
6, among the materials for forming the metal layers M4 and M6, T
Any of i, Mo, and W is used, and as a material for forming the metal layer M5 located at the center of the metal layer, a nitrogen compound and a silicon compound of the material used for the metal layer M5 located at the center are used. Is more preferred. Thus, in the formation of the film, the metal layers M4 and M6 can be prevented from being damaged due to mechanical contraction or elongation such as cracks due to mechanical reactions. For example, the same effect can be obtained by using W for the metal layer M5.

In order to manufacture such a liquid crystal device, first, a TFT array substrate 10 made of a quartz substrate, hard glass, or the like is prepared, and a barrier layer B4 and a light reflective Metal layer M6, light reflecting metal layer M5, light absorbing metal layer M4, barrier layer B
3 are formed in order from the bottom. After that, the TFT array substrate 10 is formed by the same method as in the first embodiment. Further, a counter substrate 20 is formed by a method similar to that of the first embodiment, and is bonded to the TFT array substrate 10 to form a liquid crystal device.

In the first light-shielding film 113 provided in this liquid crystal device, the metal layers M4, M5, M6 are sandwiched between the two barrier layers B3, B4. When high-temperature processing is performed after the formation of the light shielding film 113, the first light shielding film 11 is formed in the same manner as in the third embodiment.
3 light-shielding performance can be ensured. Therefore, the first light-shielding film 115 has excellent light-shielding performance.

Further, since the metal layer is formed of the light absorbing metal layer M4 on the pixel switching TFT side, light incident on the metal layer M4 is absorbed and is not reflected by the pixel switching TFT. In addition, the metal layer has a light reflective metal layer M6 on the TFT array substrate 10 side.
Therefore, light incident from the TFT array substrate 10 can be reflected. Thus, the TFT
The first light-shielding film 115 can further suppress the amount of light leakage.

Since the relationship between the barrier layers B3 and B4 and the metal layers M4, M5 and M6 is stable, the first light shielding film 1
Fifteenth, cracks are less likely to occur due to heating and cooling during the manufacturing process, and the yield can be improved.

Further, any one of WSi, MoSi, TiSi and CoSi is used as a material for forming the barrier layers B3 and B4, and three metal layers M4, M5 and MSi are formed.
6, any one of Ti, Mo, and W is used as a material for forming the metal layer M5 located at the center of the barrier layer B.
3. When a nitrogen compound of the material used for the metal layer M5 located at the center is used as a material for forming the metal layers M6 and M4 located on the B4 side, stress due to the difference in physical properties of each layer is further reduced. As a result, the relationship between the layers is further stabilized, so that the effect of the metal layer having the three-layer structure can be further enhanced.

Further, since the liquid crystal device of the present embodiment is provided with the first light shielding film 115, the light leakage current due to the insufficient light shielding performance of the first light shielding film 115 is more unlikely to occur. A liquid crystal device which can be suitably used for electronic devices having a more powerful light source can be obtained.

Note that the metal layer M6 need not be formed. When a light-shielding film composed of two metal layers is formed on the pixel switching TFT, the metal layer on the TFT side may be formed as a light-absorbing metal layer.

[Fifth Embodiment] Hereinafter, a fifth embodiment of the present invention will be described.
The embodiment will be described with reference to FIG.

This embodiment is different from the above-described third embodiment in that, instead of the first light shielding film 113 provided in the liquid crystal device shown in FIG. 5, a metal layer M3 is formed as shown in FIG. The barrier layer B5 provided on the opposite side (upper side in FIG. 7) from the TFT array substrate 10 side is connected to the side surface of the barrier layer B4 provided on the TFT array substrate 10 side (lower side in FIG. 7) of the metal layer M3. The first light-shielding film 114 is provided to cover the side surface of the metal layer M3 and extend on the TFT array substrate 10.

As described above, this embodiment differs from the third embodiment only in the first light shielding film.
Shows only the TFT array substrate and the first light-shielding film, and omits other parts that are the same as in the first embodiment, as in the third embodiment shown in FIG.

In FIG. 7, reference numeral 10 denotes a TFT array substrate 10. On the TFT array substrate 10, a barrier layer B4, a metal layer M3 provided on the barrier layer B4, and a TFT array substrate covering the metal layer M3, the side surface of the barrier layer B4, and the side surface of the metal layer M3. And a barrier layer B5 extending over the first light-shielding layer 114.

The barrier layers B4, B of the first light shielding film 114
5 and the metal layer M3 may be formed of the same material and thickness as the barrier layers B3, B4 and the metal layer M3 of the first light-shielding film 113 described in the third embodiment.

In order to manufacture such a liquid crystal device, first, a TFT array substrate 10 made of a quartz substrate, hard glass or the like is prepared, and a barrier layer B4 and a metal layer M3 are sequentially formed on the entire surface thereof by sputtering. Form. Then
A resist mask corresponding to the pattern of the first light-shielding film 114 is formed by photolithography, and the metal layer M3 and the barrier layer B4 are etched through the resist mask. Then, sputtering is performed so as to cover the film formed of the metal layer M3 and the barrier layer B4 formed in this manner, thereby covering the metal layer M3, the side surface of the metal layer M3, and the side surface of the barrier layer B4. 10
A barrier layer B5 extending upward is formed. Subsequently, an excess portion of the portion of the barrier layer B5 extending on the TFT array substrate 10 is etched by photolithography to form the first light-shielding film 114 shown in FIG. After that, the TFT array substrate 10 is formed by the same method as in the first embodiment. Furthermore, the first
The opposing substrate 20 is formed by the same method as in the above embodiment, and is bonded to the TFT array substrate 10 to form a liquid crystal device.

In the first light-shielding film 114 provided in this liquid crystal device, the metal layer M3 has two barrier layers B
4 and B5, when the high-temperature treatment is performed after forming the first light shielding film 114, the third
In the same manner as in the embodiment, the light shielding performance of the first light shielding film 114 can be ensured.

Further, the barrier layer B5 covers the metal layer M3, the side surface of the barrier layer B4, and the side surface of the metal layer M3 to form a TF.
Since it is formed to extend on the T-array substrate 10, if high-temperature processing is performed after forming the first light-shielding film 114,
Since the barrier layer B5 suppresses the side surface of the metal layer M3 from becoming an oxygen compound, a decrease in light-shielding performance due to the material forming the metal layer M3 becoming an oxygen compound is more effectively prevented. be able to. Therefore, the first light-shielding film 114 has excellent light-shielding performance.

Further, since the liquid crystal device of the present embodiment is provided with the first light-shielding film 114, light leakage current due to insufficient light-shielding performance of the first light-shielding film 114 is more unlikely to occur. A liquid crystal device which can be suitably used for electronic devices having a more powerful light source can be obtained.

Note that the light-shielding film of the present invention comprises the barrier layer B5 and the TFT array substrate 1 as described in the fifth embodiment.
0, a metal layer M3 and a barrier layer B4 can be provided, but the metal layer M3 shown in FIG.
For example, instead of the two layers of the first and fourth layers,
First light-shielding films 111, 112, and 11 shown in the first embodiment.
3, 114 may be provided.

In this case, the first light shielding films 111, 112, 1
13, 114 and the side surfaces are covered with the barrier layer B5, so that it is possible to more effectively prevent the light-shielding performance from being reduced due to the material forming the metal layer being an oxygen compound. Thus, the first light-shielding film having more excellent light-shielding performance can be obtained.

The light-shielding film of the present invention can be preferably used as a first light-shielding film of a liquid crystal device as shown in the above-described example, but can also be used as a second light-shielding film.

The light-shielding layer shown in the first to fifth embodiments may be formed on the pixel switching TFT, for example, in a layer between the pixel switching TFT and the data line.

The light-shielding layer connected to the fixed potential may be connected to either the barrier layer or the metal layer.

(Electronic Apparatus) As an example of an electronic apparatus using the liquid crystal device of the above embodiment, the configuration of a projection display device will be described with reference to FIG. In FIG.
The projection-type display device 1100 is a schematic configuration diagram of an optical system of a projection-type liquid crystal device in which three of the above-described liquid crystal devices are prepared and used as the liquid crystal devices 962R, 962G, and 962B for RGB. A light source device 920 and a uniform illumination optical system 923 are employed in the optical system of the projection display device of this example. Then, the projection display apparatus uses the uniform illumination optical system 9.
A color separation optical system 92 as a color separation unit that separates the light flux W emitted from the light into red (R), green (G), and blue (B).
4, three light valves 925R, 925G, and 925B as modulation means for modulating the color light beams R, G, and B;
A color synthesizing prism 910 as a color synthesizing unit for re-synthesizing the modulated color luminous flux, and a projection surface 10
A projection lens unit 906 is provided as projection means for performing enlarged projection on the surface of the projection lens 0. Further, a light guide system 927 for guiding the blue light flux B to the corresponding light valve 925B is also provided.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light beam emitted from the light source device 920 is transmitted to the first lens plate 92.
The light is split into a plurality of partial light beams by one rectangular lens.
Then, these partial light beams are divided into three light valves 925R and 925R by the rectangular lens of the second lens plate 922.
Superimposed around 5G and 925B. Therefore, by using the uniform illumination optical system 923, even when the light source device 920 has an uneven illuminance distribution in the cross section of the emitted light beam, the three light valves 925R, 925G, and 925B are used.
Can be illuminated with uniform illumination light.

Each color separation optical system 924 includes a blue-green reflecting dichroic mirror 941, a green reflecting dichroic mirror 942, and a reflecting mirror 943. First, in the blue-green reflecting dichroic mirror 941, the blue light beam B and the green light beam G included in the light beam W are reflected at right angles, and head toward the green reflecting dichroic mirror 942. The red light beam R passes through the mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emission unit 944 of the red light beam R to the prism unit 910 side.

Next, the green reflecting dichroic mirror 942
Of the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941,
Only the green light beam G is reflected at a right angle, and is emitted from the emission unit 945 of the green light beam G to the color combining optical system side. The blue light flux B that has passed through the green reflection dichroic mirror 942 is emitted from the emission section 946 of the blue light flux B to the light guide system 927 side. In this example, the emission portions 944 and 94 of the color light beams in the color separation optical system 924 from the emission portion of the light beam W of the uniform illumination optical element.
The distances to 5,946 are set to be substantially equal.

The red and green luminous flux R of the color separation optical system 924,
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission sections are incident on these condenser lenses 951 and 952 and are parallelized.

The red and green light beams R and G thus collimated are incident on the light valves 925R and 925G and modulated, and image information corresponding to each color light is added. That is, the switching of these liquid crystal devices is controlled by driving means (not shown) in accordance with the image information, whereby each color light passing therethrough is modulated. On the other hand, the blue light flux B is guided to the corresponding light valve 925B via the light guide system 927, where it is similarly modulated according to image information. In addition, the light valve 925 of this example
R, 925G, and 925B further include a liquid crystal light further including incident-side polarization means 960R, 960G, and 960B, emission-side polarization means 961R, 961G, and 961B, and liquid crystal devices 962R, 962G, and 962B disposed therebetween. It is a valve.

The light guide system 927 includes a light emitting section 94 for the blue light beam B.
No. 6, a condenser lens 954 disposed on the exit side, an incident-side reflection mirror 971, an exit-side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. And a condenser lens 953. The blue light flux B emitted from the condenser lens 946 is transmitted through the light guide system 927 to the liquid crystal device 962B.
And modulated. The optical path length of each color beam, that is,
Each liquid crystal device 962R, 962G, 9
The distance to 62B is the longest for the blue luminous flux B, and therefore the loss of light quantity of the blue luminous flux is the largest. However, by interposing the light guide system 927, the loss of light amount can be suppressed.

Each light valve 925R, 925G, 92
The color light fluxes R, G, and B modulated through 5B are incident on a color combining prism 910, where they are combined. The light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 100 at a predetermined position via the projection lens unit 906.

In this example, the liquid crystal devices 962R, 962G,
Since a light-blocking layer is provided on the lower side of the TFT in the 962B, the light reflected and projected by the projection optical system in the liquid crystal projector based on the projection light from the liquid crystal devices 962R, 962G, and 962B passes Even if reflected light from the surface of the TFT array substrate, part of the projected light that passes through the projection optical system after being emitted from another liquid crystal device, etc., is incident on the TFT array substrate side as return light, the pixel electrode It is possible to sufficiently shield the channel of the switching TFT from light. Therefore, even when a powerful light source is used, an electronic device in which light leakage current is unlikely to occur can be provided.

Even if a prism unit suitable for miniaturization is used for the projection optical system, each of the liquid crystal devices 962R, 962
It is not necessary to separately arrange a film for preventing light return between the G and 962B and the prism unit or to perform a light return prevention process on the polarizing means, so that the structure can be reduced in size and simplified. It is very advantageous.

Further, in the present embodiment, T
Since the influence of the FT on the channel region can be suppressed, the polarizing means 9 which has been directly subjected to the anti-backlight treatment to the liquid crystal device 9
It is not necessary to attach 61R, 961G, and 961B.
Therefore, the polarizing means is formed apart from the liquid crystal device, and more specifically, one of the polarizing means 961R, 961G, 961B.
Is attached to the prism unit 910, and the other polarizing means 960R, 960G, and 960B are condensing lenses 953, 9
45, 944. In this manner, by attaching the polarizing means to the prism unit or the condenser lens, the heat of the polarizing means is absorbed by the prism unit or the condenser lens, so that the temperature of the liquid crystal device can be prevented from rising.

Although not shown in the figure, since the liquid crystal device and the polarizing means are separated from each other, an air layer is formed between the liquid crystal device and the polarizing means. By sending air such as cold air to the liquid crystal device, the temperature rise of the liquid crystal device can be further prevented, and malfunction due to the temperature rise of the liquid crystal device can be prevented.

[0168]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments.

[Test Example 1: Relationship between Barrier Layer Film Thickness and Transmittance] FIG. 11 shows a test example.

In this test example, a light-shielding film composed of a lower barrier layer of WSi, a metal layer made of Ti, and an upper barrier layer of WSi was formed on an insulating substrate, and an insulating layer was laminated on the light-shielding film. The thickness of the upper barrier layer is 25 nm, the thickness of the metal layer is 50 nm, and the thickness of the lower barrier layer is 0 nm.
The test was performed by changing the range of ４０40 nm. The transmittance (Y value: 550 nm) was measured after the insulating layer was laminated and subjected to an annealing treatment at 1020 ° C., and the relationship between the thickness of the lower barrier layer and the transmittance (Y value: 550 nm) was examined. is there.

When the lower barrier layer was 0 nm, an oxide film was formed on the metal layer due to the oxidation of the metal layer with the insulating substrate, and the transmittance was 1.6%.

When the thickness of the lower barrier layer was set to 5 nm, the transmittance was 1.0%, and when it was 25 nm, it was 0.6%. Thus, it was confirmed that the light shielding performance was excellent. This light-shielding film has a total thickness of 78 nm when the thickness of the lower barrier layer is 3 nm, and is 115 nm in total even if the thickness of the lower barrier layer is 40 nm. Can be thin. Therefore, it was also confirmed that the steps of the alignment film of the TFT array substrate were small and the defective alignment of the liquid crystal could be reduced.

Test Example 2: Relationship between Film Thickness of Metal Layer and Transmittance in Configuration of First Embodiment FIG. 12 shows a test example.

In this test example, a light-shielding film composed of a Ti metal layer and a WSi barrier layer was formed on an insulating substrate, and an insulating layer was laminated on the light-shielding film. Then, the thickness of the metal layer is set to 50 to 1 so that the thickness of the light shielding film becomes 200 nm.
The test was performed by changing the range of 50 nm. Note that the transmittance (Y value: 550 nm) was measured after the insulating layers were laminated and subjected to annealing at 680 ° C., and the relationship between the metal layer thickness and the transmittance (Y value: 550 nm) was examined. The transmittance was measured at five points in the plane, and the average value was determined.

Even if the barrier layer is formed only on the surface of the metal layer on the side of the insulating film on which the high-temperature treatment is performed, the thickness of the metal layer becomes 5
Excellent light shielding properties of about 0.005% at 0 nm were exhibited. When the metal layer became 100 nm or more, the transmittance showed a value close to 0.

Test Example 3: Relationship between Film Thickness of Metal Layer and Transmittance in Configuration of Second Embodiment FIG. 13 shows a test example.

In this test example, a light-shielding film composed of a WSi barrier layer and a Ti metal layer was formed on an insulating substrate, and an insulating layer was laminated on the light-shielding film. Then, the thickness of the metal layer is set to 50 to 50 nm so that the thickness of the light shielding film becomes 200 nm.
The test was performed by changing the range of 150 nm. Note that the transmittance (Y value: 550 nm) was measured after the insulating layers were laminated and subjected to annealing at 680 ° C., and the relationship between the metal layer thickness and the transmittance (Y value: 550 nm) was examined.
The transmittance was measured at five points in the plane, and the average value was determined.

Even if the barrier layer is formed only on the surface of the metal layer on the insulating substrate side, if the metal layer has a thickness of 50 nm and a thickness of 0.015
%, Which is superior to that of a 200 nm WSi light-shielding film. And the metal layer is 150nm
, The transmittance showed a value close to 0.

[Test Example 4: Relationship between Film Thickness of Metal Layer and Transmittance in Configuration of Third Embodiment] FIG. 14 shows a test example.

In this test example, a light-shielding film composed of a lower barrier layer of WSi, a metal layer made of Ti, and an upper barrier layer of WSi was formed on an insulating substrate, and the insulating layer was laminated on the light-shielding film. The test was performed by setting the thickness of the upper barrier layer and the lower barrier layer to 50 nm and changing the thickness of the metal layer in the range of 10 to 100 nm. After the insulating layers were laminated and subjected to annealing at 680 ° C., the transmittance (Y value:
550 nm) to determine the relationship between the thickness of the lower barrier layer and the transmittance (Y value: 550 nm). The transmittance was measured at five points in the plane, and the average value was determined.

When the thickness of the metal layer is 10 nm and the transmittance is 0.
It was about 020%, and the transmittance was close to 0 at 50 nm or more.

In each of the test examples described above, the result was obtained that the light-shielding film had better light-shielding performance than the light-shielding film made of Wsi. In addition, since the thickness of the light-shielding film can be reduced, the warpage of the light-shielding film with respect to the insulating film is small.

[0183]

Effect of the Invention] As described above in detail, the light-shielding film of the present invention, even if high-temperature treatment is performed after forming the light shielding film, the light-shielding film facing the insulating film of SiO ₂ or the like containing an oxygen element The barrier layer made of an oxygen-free high melting point metal or metal compound suppresses the occurrence of oxidation of the metal layer of the light-shielding film, and as a result, the light-shielding performance of the light-shielding film can be ensured.

In particular, by providing the substrate for an electro-optical device and the electro-optical device of the present invention with the above-mentioned light-shielding film, it is possible to suppress the occurrence of light leakage current of the pixel switching element and to reduce the step caused by the light-shielding film. Therefore, it is possible to provide an electro-optical device substrate and an electro-optical device with high display quality.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram of various elements, wirings, and the like provided in a plurality of pixels in a matrix forming an image forming area in an embodiment of a liquid crystal device.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which a data line, a scanning line, a pixel electrode, a light shielding film, and the like are formed in one embodiment of the liquid crystal device.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a view for explaining another example of the light shielding film of the present invention.

FIG. 5 is a view for explaining another example of the light shielding film of the present invention.

FIG. 6 is a view for explaining another example of the light shielding film of the present invention.

FIG. 7 is a view for explaining another example of the light shielding film of the present invention.

FIG. 8 is a plan view of a TFT array substrate in one embodiment of a liquid crystal device together with components formed thereon as viewed from a counter substrate side.

9 is a sectional view taken along the line H-H 'of FIG.

FIG. 10 is a configuration diagram of a projection display device which is an example of an electronic device using a liquid crystal device.

FIG. 11 is a graph showing the relationship between the thickness of the barrier layer and the transmittance.

FIG. 12 is a graph showing the relationship between the thickness of a metal layer and transmittance.

FIG. 13 is a graph showing the relationship between the thickness of the metal layer and the transmittance.

FIG. 14 is a graph showing the relationship between the thickness of a metal layer and transmittance.

FIG. 15 is a diagram showing a cross-sectional structure in a pixel portion of a conventional liquid crystal device.

[Explanation of symbols]

1a Semiconductor layer 1a 'Channel region 1b Low-concentration source region (source-side LDD region) 1c Low-concentration drain region (drain-side LDD region) 1d High-concentration source region 1e High-concentration drain region 10 TFT array substrate 11a, 111, 112, 113, 114, 115: first light shielding film 12: first interlayer insulating film M1, M2, M3, M5, M6: metal layer B1, B2, B3, B4: barrier layer

Continued on the front page F-term (reference) 2H042 BA12 BA15 BA20 2H091 FA08X FA08Z FA10X FA14 FA21X FA23Z FA26X FA35Y FA37X FD06 GA01 GA06 GA13 LA03 MA07 2H092 GA29 JA24 JB51 JB61 KA10 KB25 MA05 MA13 MA17 MA29 NA25 A01 DD02 DD03 DD12 DD13 DD14 EE27 GG02 GG12 GG13 HJ13 HK03 HK05 HL07 HM14 HM15 NN42 NN44 NN45 NN46 NN54 NN55 NN72 NN73 QQ11

Claims (31)

[Claims] 1. A pair of substrates sandwiching an electro-optical material,
In an electro-optical device having a switching element provided on one of the substrates and a light-shielding film provided at a position facing the switching element, the light-shielding film is a metal layer made of a high melting point elemental metal or a metal compound. An electro-optical device comprising: a barrier layer made of an oxygen-free high melting point metal or a metal compound laminated on at least one surface of the metal layer. 2. The light-shielding film according to claim 1, wherein the light-shielding film is disposed between the one substrate and the switching element, and the barrier layer of the light-shielding layer faces the switching element. Electro-optical device. 3. The electro-optical device according to claim 1, wherein the light-shielding film is disposed on the switching element on the electro-optical material side. 4. The light-shielding film according to claim 1, wherein the metal layer of the light-shielding film includes a light-shielding metal layer and a light-absorbing metal layer, and the light-absorbing metal layer faces the switching element. The electro-optical device according to claim 1, wherein: 5. The electro-optical device according to claim 1, wherein the metal layer is sandwiched between the barrier layers. 6. A display region of a pixel is defined on the other substrate, and a metal layer made of a single metal or a metal compound having a high melting point, and an oxygen-free high melting point laminated on at least one surface of the metal layer. 6. The electro-optical device according to claim 1, further comprising a light-shielding film formed on a barrier layer made of a metal or a metal compound. 7. The electro-optical device according to claim 1, wherein the light shielding film is connected to a fixed potential. 8. The electro-optical device according to claim 1, wherein the barrier layer is made of one of a nitrogen compound, a silicon compound, a tungsten compound, tungsten, and silicon. . 9. The electro-optical device according to claim 1, wherein the barrier layer is made of WSi. 10. The electro-optical device according to claim 1, wherein the metal layer is made of Ti. 11. The electric device according to claim 10, wherein the barrier layer is formed on the upper surface and the lower surface of the metal layer, and the thickness of the upper barrier layer is larger than the thickness of the lower barrier layer. Optical device. 12. The metal layer has a thickness of 30 nm to 5 nm.
0 nm, the upper-side barrier layer has a thickness of 30 nm to 100 nm, and the lower-side barrier layer has a thickness of 10 nm.
The electro-optical device according to claim 11, wherein the distance is from 20 to 20 nm. 13. An electronic apparatus comprising the electro-optical device according to claim 1. Description: 14. An electro-optical device substrate having a light-shielding film provided on an insulating substrate, wherein the light-shielding film is a metal layer made of a single metal or a metal compound having a high melting point, and at least one of the metal layers. A substrate for an electro-optical device, comprising: a barrier layer made of an oxygen-free high melting point metal or metal compound laminated on a surface. 15. A method of manufacturing a substrate for an electro-optical device having a light-shielding film provided on an insulating substrate, wherein a metal element or a metal compound having a high melting point is formed on the insulating substrate to form a metal layer. Forming, forming a barrier layer by forming an oxygen-free high melting point metal or metal compound on the metal layer; forming an insulating material on the barrier layer to form an insulating film Forming an electro-optical device substrate. 16. A method of forming a barrier layer by forming an oxygen-free high melting point metal or metal compound on the insulating substrate before forming the metal layer. A method for manufacturing the substrate for an electro-optical device according to claim 15. 17. The method of forming an insulating film according to claim 1, wherein
17. The method for manufacturing a substrate for an electro-optical device according to claim 15, further comprising a step of performing a heat treatment at a temperature of not less than 1100C and not more than 1100C. 18. A semiconductor device comprising: a metal layer made of a single metal or a metal compound having a high melting point; and a barrier layer made of an oxygen-free high melting point metal or a metal compound laminated on at least one surface of the metal layer. Characteristic light-shielding film. 19. The light-shielding film according to claim 18, wherein the barrier layer is made of one of a nitrogen compound, a silicon compound, a tungsten compound, tungsten, and silicon. 20. A method according to claim 19, wherein the nitrogen compound of the barrier layer is Si.
20. The light-shielding film according to claim 19, wherein the light-shielding film is any one of N, TiN, WN, MoN, and CrN. 21. The silicon compound of the barrier layer,
20. The light-shielding film according to claim 19, wherein the light-shielding film is any one of iSi, WSi, MoSi, CoSi, and CrSi. 22. The light-shielding film according to claim 19, wherein the tungsten compound of the barrier layer is one of TiW and MoW. 23. The single metal of the metal layer is Ti,
The light-shielding film according to claim 18, wherein the light-shielding film is any one of W, Mo, Co, Cr, Hf, and Ru. 24. The metal compound of the metal layer is Ti
The light-shielding film according to claim 18, wherein the light-shielding film is any one of N, TiW, and MoW. 25. The barrier layer has a thickness of 1 to 200 n.
25. The method of claim 18, wherein m is
The light-shielding film according to any one of the above. 26. The metal layer has a thickness of 10 to 200.
18. The nanometer according to claim 18, wherein
6. The light-shielding film according to any one of 5. 27. The light-shielding film according to claim 18, wherein the barrier layer is laminated on both surfaces of the metal layer. 28. The light-shielding film according to claim 18, wherein the metal layer comprises a light-reflective metal layer and a light-absorbing metal layer. 29. The light shielding film according to claim 28, wherein the light absorbing metal layer is a nitride compound. 30. The light-shielding film according to claim 28, wherein the light-absorbing metal layer is laminated on both surfaces of the light-shielding metal layer. 31. A protective layer made of a metal or a metal compound having a high melting point, which protects the oxidation of the metal layer laminated on at least one surface of the metal layer. A light-shielding film comprising: