JP2002116569A - Electrophotographic photoreceptive member and electrophotographic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize the sufficient electrostatic chargeability and sensitivity of a light source from a short wavelength to a long wavelength, to decrease residual potentials and optical memories and to realize high dot reproducibility with an electrophotographic photoreceptive member having a-Si-base photoreceptive layers. SOLUTION: The photoconductive layers of the a-Si:H system are laminated on a base 101, consist of a first layer region 111 and a second layer region 112 from the base side toward the front surface side and contain group 13 atoms. These layers are decreased in the content of hydrogen atoms from the base side toward the front surface side and are decreased in the content of the group 13 atoms from the base side toward the front surface side in the second layer region.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoreceptor which is sensitive to electromagnetic waves such as light (here, light in a broad sense meaning ultraviolet, visible, infrared, X-ray, .gamma.-ray, etc.). Regarding members.

[0002]

2. Description of the Related Art In the field of image formation, a photoconductive material for forming a light receiving layer in a light receiving member has high sensitivity.
It has a high SN ratio [photocurrent (Ip) / dark current (Id)], has an absorption spectrum suitable for the spectral characteristics of the radiated electromagnetic wave, has a fast photoresponse, has a desired dark resistance value, and is used. Are required to be harmless to the human body. In particular, in the case of a light receiving member to be incorporated in an electrophotographic apparatus used in an office as an office machine, the above-mentioned non-pollutability at the time of use is important.

A photoconductive material exhibiting such excellent properties is amorphous silicon (also referred to as a-Si), particularly hydrogenated amorphous silicon (also referred to as a-Si: H). JP-A-60-35059 describes an application as a light receiving member for electrophotography.

In general, such a light receiving member is obtained by heating a conductive support to 50 ° C. to 350 ° C. and depositing the conductive support on the support by a vacuum deposition method, a sputtering method, an ion plating method, or a thermal CVD method. Then, a photoconductive layer made of a-Si: H is formed by a film forming method such as a photo CVD method or a plasma CVD method. Among them, the plasma CVD method, that is, the raw material gas is decomposed by high frequency or microwave glow discharge,
A method of forming an a-Si: H deposition film on a support has been put to practical use as a suitable method.

Japanese Patent Application Laid-Open No. 58-88115 discloses that the photoconductive layer contains a large number of atoms belonging to Group 13 of the periodic table on the support side in order to improve the image quality of the amorphous silicon photoreceptor. ing. Further, JP-A-6-337530 discloses that 50 to 80
A first photoconductive layer having a thickness of 0.1 μm and a second photoconductive layer having a thickness of 0.1 to 10 μm are laminated on each other.
There is disclosed a technique capable of providing a high-performance electrophotographic photoreceptor by gradually decreasing the content of a group element from the substrate side toward the film thickness direction.

[0006]

With the development of the technology described above, the electrical, optical, photoconductive and use environment characteristics of the electrophotographic light-receiving member are improved, and the image quality is accordingly improved. Has also improved.

However, the conventional electrophotographic light-receiving member having a photoconductive layer made of an a-Si: H-based material has a low electrical resistance, dark sensitivity, photosensitivity, and photoresponsiveness.
In terms of photoconductive properties and use environment properties, and in terms of stability over time and durability, although the properties are individually improved, they are further improved in order to improve the overall properties. The fact is that there is room.

In particular, the electrophotographic apparatus has been rapidly improving in image quality, speed, and durability. In the electrophotographic light-receiving member, the charging performance and sensitivity have been further improved by further improving the electrical and photoconductive properties. It is required to improve the performance and to greatly increase the performance in all environments.

Further, as a result of the improvement of the optical exposure device, the developing device, the transfer device and the like in the electrophotographic apparatus in order to improve the image characteristics of the electrophotographic device, the image characteristics of the electrophotographic light receiving member have been improved. Has been required to be improved.

Under these circumstances, the above-mentioned prior art has made it possible to improve the above-mentioned problems to some extent, but it cannot be said that further improvement in charging performance and image quality is still sufficient. In particular, as an issue of further improving the image quality of the amorphous silicon-based light receiving member, if the same original is continuously and repeatedly copied, an afterimage of the image exposure in the previous copying process may occur on the image at the next copying, There has been a growing demand for reducing optical memories represented by so-called ghosts.

Further, since the resolution of the electrophotographic apparatus is increased and the dot pitch of the image is reduced, the image sensitivities become susceptible to environmental fluctuations and the dot reproducibility becomes unstable, causing the same phenomenon as image deletion. Occurred in some cases.

Therefore, when designing a light receiving member for electrophotography, the layer structure of the light receiving member for electrophotography and the chemical composition of each layer are comprehensively considered so as to solve the above-mentioned problems. Improvements are needed.

On the other hand, the spread of computers in offices and general homes in recent years has progressed, and digitalization of electrophotographic apparatuses has been required not only as conventional copiers but also as facsimile machines and printers. It has become. Semiconductor lasers and LEDs used as exposure light sources for this purpose are mainly of a relatively long wavelength from near infrared to red visible light from the viewpoint of generation intensity and price. Furthermore, as electrophotographic devices have become faster and smaller in recent years, the demand for charging capability has further increased, and an exposure light source has been developed in order to reduce costs by sharing photoconductors for digital and analog machines. There is a demand for a layer design that does not depend on the wavelength.

As the speed and size of the electrophotographic apparatus have been increased, the size of the charging device has been reduced, and the speed at which the object has passed through the copying process (hereinafter, also referred to as process speed) has been increased. The passage time of the photoconductor in the inside is shortened. Furthermore, at a high process speed, carriers generated by pre-exposure and trapped in the film are likely to remain, and it may be difficult to obtain high charging ability.

Further, with respect to the sensitivity and the above-mentioned optical memory, at a high process speed, carriers generated by image exposure and trapped in the film are apt to remain, which lowers the sensitivity and easily causes optical memory. May be. The optical memory can be reduced by giving too much pre-exposure, but in that case, the charging ability is remarkably reduced, and the charging ability and the ghost may be incompatible.

Therefore, when considering use not only as a copying machine but also as a printer, about 5
Corresponding to a wide wavelength from 00 nm to about 700 nm, reducing the optical memory while securing sufficient charging ability and sensitivity,
The dot reproducibility must be improved. For this purpose, the light is absorbed sufficiently for light in a wide wavelength range to generate charges, and the charge trapped in the film is reduced. It is necessary to design a good layer.

That is, when designing a light-receiving member for electrophotography, from the comprehensive viewpoint such as the layer constitution of the light-receiving member for electrophotography and the chemical composition of each layer so as to solve the above-mentioned problems. Along with the improvement, it is necessary to further improve the characteristics of the a-Si: H material itself.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned various problems in the electrophotographic light-receiving member having a light-receiving layer composed of a-Si: H.

That is, the main object of the present invention is to improve the sensitivity, improve the sensitivity, reduce the residual potential and the optical memory at a high process speed from a short wavelength to a long wavelength of the exposure light source at a high process speed, A non-single-crystal material (a-S) based on silicon atoms that realizes dot reproducibility at a high level and enables dramatic improvement in image quality
An object of the present invention is to provide an electrophotographic light-receiving member having a light-receiving layer constituted by i).

In particular, the electrical, optical, and photoconductive properties are substantially always stable without depending on the use environment, and are excellent in light fatigue resistance. A light-receiving member for electrophotography having a light-receiving layer composed of a non-single-crystal material (a-Si) based on silicon atoms, having excellent moisture resistance, little residual potential, and good image quality. Is to provide.

[0021]

According to the present invention for achieving the above object, the present invention comprises a support, and at least first and second layer regions from the support side to the surface side,
A photoreceptor for electrophotography comprising a hydrogenated amorphous silicon (a-Si: H) -based photoconductive layer containing Group 13 atoms, wherein the content of hydrogen atoms is from the support side to the surface side. The light receiving member for electrophotography is provided, wherein the content of the Group 13 atoms decreases from the support side to the surface side in the second layer region.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present inventors focused on the behavior of carriers in an a-Si: H-based photoconductive layer, and studied the layer structure, the chemical composition and charging ability of each layer, sensitivity, optical memory and dot reproducibility. I studied diligently about the relationship with. As a result, periodic table No. 13
The present invention has been completed by controlling the distribution of the content of atoms belonging to the group (also referred to as group 13 atoms) and changing the hydrogen content in the thickness direction of the photoconductive layer.

More specifically, the content of hydrogen atoms (Ch
May be abbreviated as), the optical band gap (Eg
) And the content of group 13 atoms (C
13 may be abbreviated to 13), and the correlation between the distribution state of the electrophotographic photoreceptor and the characteristics of the electrophotographic photoreceptor was examined over various conditions. , Sensitivity, residual potential, optical memory, dot reproducibility, and the like.

Note that amorphous silicon (a-Si)
The term “system” means a non-single-crystal material having Si as a base, and a-Si: H indicates hydrogenated amorphous silicon. Further, if necessary, a halogen atom can be added to a-Si: H. In this case, a-Si: H
Also described as H and X (X represents a halogen atom).

With the photoconductive layer as described above, at a high process speed, the wavelength of the exposure light source secures sufficient chargeability from short to long wavelengths, improves sensitivity, reduces residual potential and optical memory, Dot reproducibility is achieved at a high level, and dramatic improvement in image quality can be realized.

Although the above reason is not clear, it is supposed as follows.

First, in the photoconductive layer, Ch is reduced within a specific range from the support side to the surface side so as to control Eg to be narrow on the surface side. At the same time, the photoconductive layer is formed into two layers, a portion where light is substantially incident (second layer region) and another portion (first layer region), and a portion where light is substantially incident ( In the layer region on the front surface side (that is, the second layer region), C13 is reduced within a specific range from the support side toward the surface side. As a result, the residual potential can be reduced, and the optical memory can be substantially eliminated.
The charging ability, sensitivity, dot reproducibility, etc. can also be improved.

It is considered that the optical memory is caused by the residual photo carriers generated by the pre-exposure and the image exposure. That is, the remaining carriers among the photocarriers generated in a certain copying process are swept out by the electric field due to the surface charge at the next charging or thereafter, and a potential difference occurs between the irradiated portion of the image exposure and other portions. As a result, shading occurs on the image. At this time, the carrier remaining in the portion irradiated with the image exposure includes the image exposure carrier in addition to the pre-exposure carrier also present in the portion not irradiated with the image exposure. The density of the image is determined by the balance between the remaining pre-exposure carrier and the image exposure carrier, but it is considered that the absence of any carrier as much as possible is effective for improving the optical memory. Therefore, it is necessary to improve the traveling properties of the pre-exposure carrier and the image exposure carrier so that the photo carrier travels in one copying process without remaining as much as possible in the photoconductive layer.

Further, as for the sensitivity, similarly, if carriers generated by image exposure and trapped in the film are likely to remain, the sensitivity decreases. Therefore, it is necessary to improve the traveling properties of the photocarrier so that the photocarrier travels in one copying process without remaining as much as possible in the photoconductive layer.

Further, in recent years, as the speed and size of the electrophotographic apparatus have been increased, the size of the charging device has been reduced and the process speed has been increased, and the passage time of the photosensitive member in the charger has been shortened. Furthermore, at a high process speed, carriers generated by pre-exposure and trapped in the film are likely to remain, which may cause a decrease in charging ability. In order to prevent this and improve the charging ability, it is necessary to balance so that the number of carriers trapped in the film is reduced and the running property is improved.

Further, when Ch is reduced and Eg is made relatively narrow in order to increase the light absorptance of the light incident portion, the photocarriers generated by the resistance of the film itself tend to diffuse in the lateral direction. As a result, when the resolution is increased and the dot pitch is reduced, a lateral flow of carriers occurs due to the electric field between the dots, so that development similar to the image flow is easily observed, and the dot reproducibility may be reduced. In order to prevent this, it is necessary to suppress the lateral flow of carriers while controlling the resistance at the light incident portion.

Therefore, Ch as a photoconductive layer is reduced within a specific range from the conductive support side to the surface side to reduce E.
By making g smaller on the surface side, the absorption of not only short-wavelength light but also long-wavelength light is increased, and the light incident portion can be made thinner. The trapping rate is reduced, and the traveling property of electrons is improved.

In addition, in the photoconductive layer, the way of changing C13 is substantially different between the portion where light is incident and the other portion to form two layers, and the conductive support is substantially formed at the portion where light is incident. Experiments have shown that by reducing the total balance from the body side to the surface side within a specific range and controlling the lateral flow of the generated optical carrier, the runnability of the optical carrier is improved. Was.

That is, by changing Ch of the photoconductive layer from the conductive support side to the surface side so that Eg becomes narrow, sufficient light absorption can be obtained over a wide wavelength range. Furthermore, by providing two layer regions in the photoconductive layer in which C13 is changed in a different manner, and by appropriately controlling Ch and C13 to obtain a total balance, the lateral flow of the optical carrier can be controlled, and the traveling of the optical carrier can be controlled. Experiments have shown that the reproducibility is improved, the charging ability and sensitivity are improved, the optical memory is reduced, and the dot reproducibility is improved.

With the above-described mechanism, in the present invention, a reduction in optical memory, an improvement in charging ability and sensitivity, and a high level of dot reproducibility can be achieved to solve various problems in the prior art. An electrophotographic light-receiving member exhibiting excellent electrical, optical and photoconductive properties, image quality, durability and use environment can be obtained.

Hereinafter, the electrophotographic light-receiving member of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram for explaining the layer configuration of the electrophotographic light-receiving member of the present invention.

An electrophotographic light receiving member 1 shown in FIG.
In No. 00, a light receiving layer 102 is provided on a support 101 for a light receiving member. This light receiving layer 102
Is a photoconductive layer 1 made of a-Si: H and having photoconductivity.
The photoconductive layer 103 is composed of a first layer region 111 and a second layer region 112 in order from the support 101 toward the free surface 106. If necessary, the photoconductive layer 103 may be added with a halogen atom,
-Si: H, X can also be used.

Light receiving member 1 for electrophotography shown in FIG.
In No. 00, a light receiving layer 102 is provided on a support 101 for a light receiving member. The light receiving layer 102 is made of a-Si: H and has a photoconductive property.
And an a-Si based surface layer 104, and the surface layer 1
04 has a free surface 106. Also, the photoconductive layer 1
Reference numeral 03 denotes a first layer region 111 and a second layer region 112 in order from the support 101 side. In addition, if necessary, a halogen atom is added to the photoconductive layer 103, and a-
It can also be made of Si: H, X.

Light receiving member 1 for electrophotography shown in FIG.
In No. 00, a light receiving layer 102 is provided on a support 101 for a light receiving member. The light receiving layer 102 is formed of the a-Si based charge injection blocking layer 10 in order from the support 101 side.
5, a photoconductive layer 103 made of a-Si: H and having photoconductivity, and an a-Si-based surface layer 104. The surface layer 104 has a free surface 106. The photoconductive layer 103 is formed in the first layer region 11 in order from the support 101 side.
1 and a second layer region 112. Note that, if necessary, the photoconductive layer 103 may be made of a-Si: H, X to which a halogen atom is added.

<Support> The support used in the present invention may be either conductive or electrically insulating. As the conductive support, Al, Cr, Mo, Au, In,
Examples include metals such as Nb, Te, V, Ti, Pt, Pd, and Fc, and alloys thereof, such as stainless steel.

Also, a film or sheet of a synthetic resin such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polystyrene, polyamide, etc. as an electrically insulating material;
Glass, ceramic, and the like can be given. At least the surface of the electrically insulating support on the side on which the light receiving layer is formed can be subjected to a conductive treatment and used as the support.

The shape of the support used can be a cylindrical surface or an endless belt having a smooth surface or a fine uneven surface, and the thickness thereof can form a desired electrophotographic light-receiving member. As appropriate. When flexibility as a light receiving member for electrophotography is required, it can be made as thin as possible within a range where the function as a support can be sufficiently exhibited. However, the support is usually 10 μm in view of production, handling, mechanical strength and the like.
That is all.

<Photoconductive layer> The photoconductive layer formed on the support and constituting at least a part of the light receiving layer is appropriately formed by, for example, a vacuum deposition film forming method so that desired characteristics can be obtained. Are set, and a raw material gas or the like to be used is selected and produced. Specifically, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method or a microwave CVD method, or a DC discharge CVD method or the like), a sputtering method, a vacuum deposition method, an ion plating method, an optical plating method, CVD method, thermal CVD
It can be manufactured by various thin film deposition methods such as a method.

These thin film deposition methods are appropriately selected and adopted depending on factors such as manufacturing conditions, the degree of load under capital investment, the manufacturing scale, and the characteristics desired for the electrophotographic light-receiving member to be manufactured. Since it is relatively easy to control the conditions for producing the electrophotographic light-receiving member having desired characteristics, the high-frequency glow discharge method is preferred.

In order to form the photoconductive layer by the glow discharge method, basically, S which can supply silicon atoms (Si) can be used.
i source gas and H capable of supplying hydrogen atoms (H)
A supply source gas and, if necessary, an X supply source gas capable of supplying a halogen atom (X) are introduced in a desired gas state into a reaction vessel capable of reducing the pressure inside the reaction vessel. A-Si: H or a-Si: H on a predetermined support previously set at a predetermined position.
A layer made of -Si: H, X may be formed.

When hydrogen atoms and / or halogen atoms are contained in the photoconductive layer, they compensate for dangling bonds of silicon atoms in the layer and improve the quality of the layer, especially the photoconductivity and the charge retention characteristics. Let it. The content of the hydrogen atom or the sum of the content of the hydrogen atom and the content of the halogen atom is preferably 10 to 45 atomic%, more preferably 10 to 40 atomic%, based on the total amount of the constituent atoms.

Substances that can serve as a Si supply gas include:
Gaseous substances such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , and Si ₄ H ₁₀ or gaseous silicon hydrides (silanes) can be effectively used. SiH ₄ , in terms of ease of handling and good Si supply efficiency,
Si ₂ H ₆ is mentioned as a preferable example.

In order to structurally introduce hydrogen atoms into the formed photoconductive layer so as to make it easier to control the introduction ratio of hydrogen atoms, and to obtain a film characteristic which achieves the object of the present invention, In some cases, a layer may be formed in an atmosphere in which a desired amount of a gas of a silicon compound containing H ₂ , He, or hydrogen atom is mixed with these gases. Further, each gas may be mixed not only with a single species but also with a plurality of species at a predetermined mixture ratio.

As the source gas for supplying a halogen atom, a gaseous substance such as a halogen gas, a halide, an interhalogen compound containing a halogen, a silane derivative substituted by a halogen, or a gaseous halogen compound is preferable. Can be Further, a gaseous substance containing a silicon atom and a halogen atom as constituent elements or a silicon hydride compound containing a halogen atom that can be gasified can also be mentioned as an effective substance. In particular,
Fluorine gas (F ₂ ), BrF, ClF, ClF ₃ , BrF
₃ , halogen compounds such as BrF ₅ , IF ₃ and IF ₇ . As a silicon compound containing a halogen atom, a silane derivative substituted with a so-called halogen atom,
Specifically, for example, silicon fluoride such as SiF ₄ or Si ₂ F ₆ can be mentioned as a preferable example.

Hydrogen atoms contained in the photoconductive layer and / or
Alternatively, to control the amount of halogen atoms, for example, by controlling the temperature of the support, the amount of a raw material used to contain hydrogen atoms and / or halogen atoms introduced into the reaction vessel, and the discharge power, etc. Good.

The hydrogen atoms contained in the photoconductive layer need to be in a non-uniform distribution state so as to decrease from the conductive support side to the surface side in the layer thickness direction.

FIG. 2 shows that C in the photoconductive layer in the present invention.
The example of the distribution state of h was shown. As shown in FIG. 2, the content of hydrogen atoms decreases from the support side toward the surface side.
The aspect may be linear as shown in FIGS. 2A to 2D or may be curved as shown in FIGS. 2E and 2F. Alternatively, the steps may be made stepwise as shown in FIG.

In order to realize sufficient light absorption over a wide wavelength range and sufficiently improve the traveling properties of carriers to obtain the effect of the present invention, the photoconductive layer needs to have hydrogen atoms on the conductive support side in the photoconductive layer. The ratio of the content of hydrogen atoms on the surface side to the content is preferably 0.4 or more and 0.95 or less.

Furthermore, the photoconductive layer is an atom belonging to Group 13 of the periodic table (also abbreviated as a Group 13 atom) which is used as an impurity for imparting p-type conductivity in the semiconductor field as an atom for controlling conductivity. It contains.

As the Group 13 atoms, specifically, boron (B), aluminum (Al), gallium (Ga),
There are indium (In), thallium (Tl) and the like, and B, Al and Ga are particularly preferable.

The content of Group 13 atoms contained in the photoconductive layer is preferably 1 × 1 with respect to silicon atoms.
0 ^{-2 to} 100 atomic ppm, more preferably 5 × 10 ^-2 to
50 atomic ppm, optimally 1 × 10 ^-1 to 10 atomic ppm
It is said.

Group 13 atoms contained in the photoconductive layer are:
It is necessary that there is a portion that is contained in a non-uniform distribution state from the conductive support side to the surface side in the layer thickness direction.

More specifically, in the second layer region, the content of the group 13 atoms on the conductive support side with respect to the content of the group 13 atoms on the surface side is reduced.
It is preferable that the ratio of the group atom content be 0.05 or more and 0.6 or less.

In the first layer region, the content of atoms belonging to Group 13 is preferably constant from the conductive support side toward the surface side. However, constant means SI
When the content of Group 13 atoms is measured by the MS method,
It means that the content is unchanged within the analytical accuracy.

It is preferable that the rate of decrease in the content of atoms belonging to Group 13 per unit film thickness from the support side to the surface side is smaller than the rate of decrease in the second layer region.

The ratio of the content of Group 13 atoms on the front side to the content of Group 13 atoms on the conductive support side in the second layer region is within the above range, and the ratio of the content of Group 13 atoms on the first layer region is within the above range. When the rate of decrease in the content of atoms belonging to the group per unit film thickness from the support side to the surface side is smaller than that of the second layer region, the lateral flow of the optical carrier and the traveling property of the optical carrier are improved. Thus, the effects of the present invention can be sufficiently obtained.

In the photoconductive layer, the above-mentioned content of hydrogen atoms is made to be in a non-uniform distribution state, and the content of atoms belonging to Group 13 is distributed as described above to obtain a total balance. In addition, both the running property of the optical carrier and the lateral flow of the optical carrier are improved, and the charging ability, sensitivity, optical memory, and dot reproducibility are improved.

FIG. 3 shows that C in the photoconductive layer according to the present invention.
13 are shown as examples of the distribution state. As shown in FIG. 3, the photoconductive layer comprises at least a first and a second layer region from the support side to the surface side.
The content of Group 3 atoms decreases from the support side toward the surface side. The mode can be linear as shown in FIGS. 3A and 3B, or can be curved as shown in FIG. 3C. Further, as shown in FIG. In addition, as shown in FIG.
And (g), it may be composed of a curved part and a stepped part.

In order to introduce the Group 13 atoms structurally, a raw material for introducing the Group 13 atoms is supplied in a gaseous state in a reaction vessel at the time of forming the layer, and another material for forming the photoconductive layer is formed. What is necessary is just to introduce with gas. It is preferable that a gaseous substance which can be used as a raw material for introducing a group 13 atom be a gaseous substance at normal temperature and normal pressure or a substance which can be easily gasified at least under layer forming conditions.

Such a raw material for introducing a group 13 atom
Specifically, for boron atom introduction, B_Two
H₆, B_FourH_Ten, B_FiveH₉, B_FiveH₁₁, B₆H_Ten, B₆H₁₂,
B₆H_{1 Four}Borohydride, BF_Three, BCl_Three, BBr_Threeetc
And the like. In addition, AlCl
_Three, GaCl_Three, Ga (CH_Three)_Three, InCl_Three, TlCl_Three
And the like.

Further, it is also effective that the photoconductive layer contains at least one selected from a carbon atom, an oxygen atom and a nitrogen atom. The content is preferably 1 × 10 ⁻⁵ to 10 atomic%, more preferably 1 × 1 to 10 atomic%, based on the total amount of the constituent atoms.
0 ^-4 to 8 atomic%, optimally 1 × 10 ^{-3 to} 5 atomic% is desirable. These atoms may be uniformly contained in the photoconductive layer, or there may be a portion having a non-uniform distribution such that the content changes in the thickness direction of the photoconductive layer.

The thickness of the photoconductive layer is appropriately determined as desired from the viewpoint of obtaining desired electrophotographic characteristics and economic effects, and is preferably 20 μm to 50 μm, more preferably 23 μm to 45 μm, and still more preferably. Is 25μ
m to 40 μm. When the layer thickness is less than 20 μm,
In some cases, electrophotographic characteristics such as charging ability and sensitivity become insufficient for practical use. When the thickness is more than 50 μm, the production time of the photoconductive layer becomes longer and the production cost may become higher.

It is preferable that the film thickness of the second layer region is 0.5 μm or more and 15 μm or less. If it is thinner than 0.5 μm, the light absorption area may reach the deep part of the first layer area and the total balance may be lost.If it is thicker than 15 μm, the residual potential increases, sensitivity, memory potential, and dot reproduction. May not be sufficiently improved.

In order to form a photoconductive layer having desired film characteristics, a mixing ratio of a gas for supplying Si and a diluting gas is required.
It is necessary to appropriately set the gas pressure in the reaction vessel, the discharge power, and the temperature of the support.

[0071] The flow rate of H ₂ and / or He used as a dilution gas is properly selected within an optimum range in accordance with the layer design, to Si-feeding gas H ₂ and / or He
Is controlled in the range of usually 3 to 30 times, preferably 4 to 25 times, and most preferably 5 to 20 times.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected in accordance with the layer design, but is usually 1 × 10 ^-2 to 2 ×.
10 ³ Pa, preferably 5 × 10 ^{−2 to} 5 × 10 ² Pa, and most preferably 1 × 10 ⁻¹ to 2 × 10 ² Pa.

Similarly, the optimum range of the discharge power is appropriately selected according to the layer design. The ratio of the discharge power to the flow rate of the gas for supplying Si is set to 0.3 to 10, preferably 0.5 to 0.5.
-9, more preferably 1-6.

Further, the temperature of the support is appropriately selected in an optimum range according to the layer design.
The temperature is set to 0 ° C, more preferably 230 to 330 ° C, and still more preferably 250 to 310 ° C.

Desirable numerical ranges of the temperature and gas pressure of the support for forming the photoconductive layer include the above-mentioned ranges. However, the conditions are not usually determined separately and independently, but have desired characteristics. It is desirable to determine the optimum value based on mutual and organic relationships to form the light receiving member.

<Surface Layer> In the present invention, an a-Si based surface layer can be formed on the photoconductive layer formed on the support. This surface layer has a free surface and is provided to achieve the object of the present invention mainly in moisture resistance, continuous repeated use characteristics, electric pressure resistance, use environment characteristics, and durability.

Further, since each of the amorphous material forming the photoconductive layer and the amorphous layer forming the surface layer has a common component of silicon atoms, the chemical stability at the interface between the layers is high. Has been sufficiently secured.

The surface layer can be made of any material as long as it is an a-Si material. For example, the surface layer contains a hydrogen atom (H) and / or a halogen atom (X) and further contains a carbon atom. Amorphous silicon (a-SiC:
H, X), amorphous silicon containing a hydrogen atom (H) and / or a halogen atom (X), and further containing an oxygen atom (a-SiO: also described as H, X), a hydrogen atom (H ) And / or a halogen atom (X), and further contains a nitrogen atom-containing amorphous silicon (a-SiN: H, X), a hydrogen atom (H) and / or a halogen atom (X). And amorphous silicon (a-SiCO) further containing at least one of a carbon atom, an oxygen atom and a nitrogen atom.
N: H, X) are suitably used.

The surface layer is manufactured by a vacuum deposition film forming method by appropriately setting numerical conditions of film forming parameters so as to obtain desired characteristics. Specifically, for example, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method or a microwave CVD method, or a DC discharge CVD method), a sputtering method, a vacuum deposition method, an ion plating method, It can be formed by various thin film deposition methods such as a photo CVD method and a thermal CVD method. These thin film deposition methods are based on manufacturing conditions, load on capital investment,
The production scale is appropriately selected and adopted depending on factors such as characteristics desired for the electrophotographic light-receiving member to be produced.
From the productivity of the light receiving member, it is preferable to use the same deposition method as that for the photoconductive layer.

For example, a-Si is formed by a glow discharge method.
In order to form a surface layer composed of C: H and X, a raw material gas for supplying Si that can supply silicon atoms (Si) and a raw material for supplying C that can supply carbon atoms (C) are basically used. A gas, a source gas for supplying H that can supply hydrogen atoms (H), and a source gas for supplying X that can supply halogen atoms (X) are placed in a reaction vessel that can reduce the pressure in a desired gas state. Then, a glow discharge is generated in the reaction vessel, and a layer made of a-SiC: H, X may be formed on a support on which a photoconductive layer previously formed at a predetermined position is formed.

The material of the surface layer may be any amorphous material containing silicon, but is preferably a compound with a silicon atom containing at least one element selected from carbon, nitrogen and oxygen. Those containing the main component are preferred.

In particular, when the surface layer is composed mainly of a-SiC, the amount of carbon is preferably in the range of 30 to 90 atomic% based on the sum of silicon atoms and carbon atoms.

The surface layer may contain hydrogen atoms and / or halogen atoms, which compensate for dangling bonds of constituent atoms such as silicon atoms and improve the quality of the layer, especially the photoconductive properties. And improve the charge retention characteristics. The hydrogen content is preferably 20 to 70 atomic%, more preferably 25 to 65 atomic%, based on the total amount of the constituent atoms,
More preferably, the content is 30 to 60 atomic%. Further, the content of the halogen atom is usually 0.01 to 15
Atomic%, preferably 0.1 to 10 atomic%, optimally 0.5
To 5 at%.

The light receiving member formed within the above range of the hydrogen and / or halogen content is used as an excellent material in practical terms. That is, it is known that defects (mainly, dangling bonds of silicon atoms and carbon atoms) existing in the surface layer have an adverse effect on the characteristics as a light receiving member for electrophotography. For example, deterioration of charging characteristics due to injection of charge from the free surface, fluctuations in charging characteristics due to changes in the surface structure under the use environment, for example, high humidity, and a photoconductive layer formed on the surface layer by the photoconductive layer during corona charging or light irradiation As an adverse effect, the charge is injected and the charge is trapped in the defect in the surface layer to cause an afterimage phenomenon at the time of repeated use.

However, when the hydrogen content in the surface layer is 2
By controlling the content to 0 atomic% or more, defects in the surface layer are greatly reduced, and as a result, the electrical characteristics and high-speed continuous usability can be drastically improved as compared with the related art.

On the other hand, if the hydrogen content in the surface layer is 71 atomic% or more, the hardness of the surface layer may decrease,
It may not be able to withstand repeated use. Therefore,
Controlling the hydrogen content in the surface layer within the above range is one of the important factors in obtaining excellent desired electrophotographic properties. The hydrogen content in the surface layer can be controlled by the flow rate (flow rate ratio) of the raw material gas, the temperature of the support, the discharge power, the gas pressure, and the like.

The halogen content in the surface layer is set to 0.0
By controlling the content to be 1 atomic% or more, it becomes possible to more effectively achieve the generation of the bond between silicon atoms and carbon atoms in the surface layer. Further, as a function of the halogen atoms in the surface layer, it is possible to effectively prevent the bond between the silicon atom and the carbon atom from being broken due to damage such as corona.

On the other hand, when the halogen content in the surface layer exceeds 15 atomic%, the effect of the generation of the bond between the silicon atom and the carbon atom in the surface layer and the breakage of the bond between the silicon atom and the carbon atom due to damage such as corona are prevented. The effect of prevention may be insufficient. Furthermore, since the excess halogen atoms hinder the mobility of carriers in the surface layer, residual potential and image memory may be generated. Therefore, controlling the halogen content in the surface layer within the above range is one of the important factors in obtaining desired electrophotographic characteristics. Like the hydrogen content, the halogen content in the surface layer can be controlled by the flow rate (ratio) of the raw material gas, the temperature of the support, the discharge power, the gas pressure, and the like.

The substance which can be a gas for supplying silicon (Si) used in forming the surface layer includes Si (Si).
Gaseous substances such as H ₄ , Si ₂ H ₆ , Si ₃ H ₈ , and Si ₄ H ₁₀ or gaseous silicon hydrides (silanes) are effectively used. SiH ₄ , Si ₂ H, etc. in terms of ease of handling, high Si supply efficiency, etc.
₆ is preferred. In addition, these S
The raw material gas for supplying i is optionally H ₂ , He, Ar,
It may be used after being diluted with a gas such as Ne.

Examples of the substance that can serve as a carbon supply gas include:
A gaseous substance such as CH ₄ , C ₂ H ₂ , C ₂ H ₆ , C ₃ H ₈ , C ₄ H ₁₀ or a gasifiable hydrocarbon can be used effectively. Easy handling, S
CH ₄ , C ₂ H ₂ , and C ₂ H ₆ are preferred in terms of i-supply efficiency and the like. Further, the raw material gas for supplying C may be used after being diluted with a gas such as H ₂ , He, Ar, or Ne as necessary.

Substances that can serve as nitrogen or oxygen supply gas include NH ₃ , NO, N ₂ O, NO ₂ , O ₂ , CO, C
Gaseous substances such as O ₂ and N ₂ , or compounds that can be gasified, are mentioned as being effectively used. If necessary, H ₂ , H
It may be diluted with a gas such as e, Ar, Ne or the like before use.

In order to make it easier to control the ratio of hydrogen atoms introduced into the surface layer to be formed, hydrogen gas or a silicon compound gas containing hydrogen atoms may be used in addition to these gases. It is preferable to form a layer by mixing a desired amount. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

Examples of the effective source gas for supplying a halogen atom include a gaseous substance such as a halogen gas, a halide, an interhalogen compound containing a halogen, a silane derivative substituted with a halogen, or a gaseous halogen compound. Can be Further, a gaseous substance containing a mixed element of a silicon atom and a halogen atom, or a silicon hydride compound containing a halogen atom which can be gasified can also be mentioned as an effective substance.

Specific examples of the halogen compound that can be preferably used include fluorine gas (F ₂ ), BrF, ClF, and the like.
Inter-halogen compounds such as ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ and IF ₇ can be mentioned. Specific examples of the silicon compound containing a halogen atom, ie, a silane derivative substituted with a halogen atom, include, for example, SiF ₄ , Si ₂
Silicon fluoride such as F ₆ can be mentioned as a preferable example.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the surface layer, for example, the temperature of the support, the reaction of the raw materials used to contain hydrogen atoms and / or halogen atoms, What is necessary is just to control the quantity introduced into a container, discharge power, etc.

One or more of carbon atoms, oxygen atoms and nitrogen atoms may be uniformly contained in the surface layer, or the content may vary in the thickness direction of the surface layer. There may be a portion having an uneven distribution.

Further, it is preferable that the surface layer contains atoms for controlling conductivity as necessary. The atoms controlling the conductivity may be contained in the surface layer in a state of being uniformly distributed, or there may be a part containing the atom in the layer thickness direction in a non-uniform distribution state. .

As an atom for controlling conductivity, an atom belonging to Group 13 of the periodic table that provides p-type conductivity or an atom belonging to Group 15 of the periodic table that provides n-type conductivity is used. be able to.

As the Group 13 atoms, specifically, boron (B), aluminum (Al), gallium (Ga),
There are indium (In), thallium (Tl) and the like, and B, Al and Ga are particularly preferable. Group 15 atoms include:
Specifically, phosphorus (P), arsenic (As), antimony (S
b), bismuth (Bi) and the like, and P and As are particularly preferable.

The content of atoms for controlling conductivity contained in the surface layer is preferably from 1 × 10 ⁻³ to 1 × 10 ^3.
Atom ppm, more preferably 1 × 10 ^-2 ~5 × 10 ² atomic ppm, and optimally are 1 × 10 ^-1 ~10 ² atom ppm.

Atoms for controlling conductivity, for example,
In order to structurally introduce a group 13 atom or a group 15 atom, a source material for introducing a group 13 atom or
The raw material for introducing group V atoms is introduced into the reaction vessel in a gaseous state.
It may be introduced together with another gas for forming the surface layer. As a raw material for introducing a Group 13 atom or a raw material for introducing a Group 15 atom, a gaseous substance at normal temperature and pressure or a substance which can be easily gasified at least under layer forming conditions is employed. Is desirable.

As such a raw material for introducing a group 13 atom, specifically, for introducing a boron atom, B ₂
Include _{H 6, B 4 H 10,} B 5 H 9, B 5 H 11, B 6 H 12, B 6 H 14 , etc. borohydride, BF _3, BCl _3, BBr boron halide such as ₃ . In addition, AlCl ₃ , Ga
Cl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ , TiCl _{3 and the} like can also be mentioned.

As a raw material for introducing a group 15 atom, the one effectively used is P for introducing a phosphorus atom.
Phosphorus hydride such as H ₃ , P ₂ H ₄ , PH ₄ I, PF ₃ , PF ₅ ,
PCl ₃ , PCl ₃ , PCl ₅ , PBr ₃ , PBr ₅ , PI ₃
And the like. In addition, AsH ₃ ,
AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ ,
SbF ₃ , SbF ₃ , SbF5, Sbcl ₃ , SbCl ₅ ,
BiH ₃ , BiCl ₃ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing a group 15 atom.

If necessary, these raw materials for introducing atoms for controlling conductivity may be made of H ₂ , He, Ar, Ne.
May be used after being diluted with such a gas.

The thickness of the surface layer is preferably 0.0
The thickness is 1 to 3 μm, more preferably 0.05 to 2 μm, and further preferably 0.1 to 1 μm. Layer thickness 0.01μ
If the thickness is less than m, the surface layer may be easily lost due to abrasion or the like during use of the light receiving member, and if it exceeds 3 μm, the residual potential may increase and the electrophotographic characteristics may deteriorate.

The surface layer is carefully prepared so that the required properties are provided as desired. That is, Si,
A substance containing at least one atom selected from the group consisting of C, N, and O and H and / or X is structurally crystalline such as polycrystal or microcrystal depending on its formation conditions. From amorphous to amorphous (collectively non-single crystal).
Since the properties up to the insulating property and the properties from the photoconductive property to the non-photoconductive property are shown, the fabrication conditions are adjusted so that a compound having desired properties according to the purpose is formed. The choice is made strictly.

For example, in order to provide the surface layer mainly for the purpose of improving the pressure resistance, the surface layer is made of a non-single-crystal material having a remarkable electric insulating property in a use environment.

When the surface layer is provided mainly for the purpose of improving the continuous repetitive use characteristics and the use environment characteristics, the degree of the above-mentioned electric insulation is alleviated to a certain extent, and to a certain degree with respect to the irradiated light. Formed as a sensitive non-single crystal material.

In order to form the surface layer, it is necessary to appropriately set the temperature of the support and the gas pressure in the reaction vessel as desired.

The temperature of the support is appropriately selected in an optimum range according to the layer design.
The temperature is set to 350 ° C, more preferably 230 to 330 ° C, and most preferably 250 to 310 ° C.

The gas pressure in the reaction vessel is also appropriately selected in an optimum range according to the layer design, but is usually 1 × 10 ⁻² to 2 × 10 ³ Pa, preferably 5 × 10 ^−2.
５5 × 10 ² Pa, optimally 1 × 10 ^-1 to 1 × 10 ² Pa
And

Desirable numerical ranges of the temperature and the gas pressure of the support for forming the surface layer include the above-mentioned ranges. However, the conditions are not usually determined independently and separately, and the light having the desired characteristics is not usually determined. It is desirable to determine the optimum value based on mutual and organic relationships to form the receiving member.

Furthermore, it is also possible to provide a blocking layer (lower surface layer) between the photoconductive layer and the surface layer in which the content of at least one of carbon, oxygen and nitrogen atoms is smaller than that of the surface layer. This is effective for further improving the characteristics such as the performance.

A region is provided between the surface layer and the photoconductive layer, in which the content of one or more of carbon, oxygen and nitrogen atoms changes so as to decrease toward the photoconductive layer. Is also good. Thereby, the adhesion between the surface layer and the photoconductive layer can be improved, and the influence of interference due to light reflection at the interface can be further reduced.

<Charge Injection Blocking Layer> In the electrophotographic light-receiving member of the present invention, a charge having a function of preventing charge injection from the conductive support side between the conductive support and the photoconductive layer. Providing an injection blocking layer is more effective. That is, the charge injection blocking layer has a function of preventing charge from being injected from the support side to the photoconductive layer side when the photoreceptive layer has been subjected to a charge treatment of a fixed polarity on its free surface. Such a function is not exhibited when subjected to the charging treatment of
It has a so-called polarity dependency. In order to provide such a function, the charge injection blocking layer contains a relatively large number of atoms for controlling conductivity as compared with the photoconductive layer.

The atoms for controlling the conductivity contained in the charge injection blocking layer may be distributed evenly and uniformly in the layer, or may be uniformly distributed in the layer thickness direction. Some portions may be contained in a non-uniformly distributed state. When the distribution concentration is non-uniform, it is preferable that the compound be contained so as to be distributed more on the support side.

However, in any case, it is necessary to uniformly contain the particles in a direction parallel to the surface of the support in a direction parallel to the surface of the support in order to make the characteristics uniform in the direction in the screen.

As the atoms for controlling the conductivity contained in the charge injection blocking layer, Group 13 atoms and Group 15 atoms can be used.

Specific examples of the Group 13 atom include B
(Boron), Al (aluminum), Ga (gallium), In (indium), Ta (thallium), and the like, and B, Al, and Ga are particularly preferable. As the Group 15 atom, specifically, P (phosphorus), As (arsenic), Sb
(Antimony), Bi (bismuth) and the like.
As is preferred.

The content of atoms for controlling conductivity is as follows.
Preferably 10 to 1 × 10 ⁴ atomic ppm, more preferably 50 to 5 × 10 ³ atomic ppm, and still more preferably 1 × 10 ⁴ atomic ppm.
It is set to 10 ² to 1 × 10 ³ atomic ppm.

Further, carbon atoms,
By containing at least one of a nitrogen atom and an oxygen atom, the adhesion to another layer provided in direct contact with the charge injection blocking layer can be improved.

One or more of the carbon, nitrogen and oxygen atoms contained in the charge injection blocking layer may be uniformly distributed throughout the layer, or may be uniformly distributed in the layer thickness direction. Although it is contained without, there may be a part which is contained in a state of being unevenly distributed. However, in any case, in a direction parallel to the surface of the support,
It is necessary that they be uniformly contained in a uniform distribution in order to uniform the characteristics in the in-plane direction.

The content of at least one of carbon, nitrogen and oxygen atoms contained in the entire layer region of the charge injection blocking layer is as follows when one kind is used, and when two or more kinds are used. Preferably, as a total, 1 × 10 ⁻³ to 50 atomic%,
More preferably, it is set to 5 × 10 ⁻³ to 30 atomic%, further preferably, 1 × 10 ⁻² to 10 atomic%.

Further, hydrogen atoms and / or halogen atoms contained in the charge injection blocking layer compensate for dangling bonds existing in the layer, and are effective in improving the film quality. The content of hydrogen atoms, the content of halogen atoms, or the sum of hydrogen atoms and halogen atoms in the charge injection blocking layer is preferably 1
-50 at%, more preferably 5-40 at%, and most preferably 10-30 at%.

The thickness of the charge injection blocking layer is preferably from 0.1 to 5 μm, more preferably from 0.3 to 4 μm, and still more preferably 0, from the viewpoints of obtaining desired electrophotographic characteristics and economic effects. 0.5 to 3 μm. 0.1 layer thickness
When the thickness is less than μm, the injection suppuration of electrification from the support may be insufficient, and sufficient charging ability may not be obtained. On the other hand, even if the thickness is more than 5 μm, the production cost may be increased due to the extension of the production time rather than the substantial improvement of the electrophotographic characteristics.

The charge injection blocking layer can be formed by a vacuum deposition method as in the case of the photoconductive layer. that time,
As in the case of the photoconductive layer, it is necessary to appropriately set the mixing ratio of the gas for supplying Si and the diluent gas, the gas pressure in the reaction vessel, the discharge power, and the temperature of the support.

The flow rate of H ₂ and / or He is appropriately selected according to the layer design, but H ₂ and / or He is preferably 1 to 20 times, more preferably 3 to 20 times the Si supply gas. It is desirable to control to a range of up to 15 times, more preferably 5 to 10 times.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design.
^{−2 to} 2 × 10 ³ Pa, more preferably 5 × 10 ^{−2 to} 5 ×
It is desirable that the pressure be 10 ² Pa, most preferably 1 × 10 ⁻¹ to 2 × 10 ² Pa.

Similarly, the optimum range of the discharge power is appropriately selected in accordance with the layer design. The ratio of the discharge power to the flow rate of the gas for supplying Si is preferably 1 to 7, more preferably 2 to 6 times, and It is preferable to set the range to 3 to 5 times.

Further, the temperature of the support is appropriately selected in an optimum range according to the layer design, but is preferably from 200 to 35.
The temperature is desirably 0 ° C, more preferably 230 to 330 ° C, and still more preferably 250 to 310 ° C.

Desirable numerical ranges of the mixing ratio of the diluent gas, the gas pressure, the discharge power, and the temperature of the support for forming the charge injection blocking layer include the above-mentioned ranges, and the factors for forming these layers are usually independent. However, it is desirable that the optimum value of each layer forming factor be determined based on mutual and organic relationships in order to form a surface layer having desired properties.

In addition, in the light receiving member for electrophotography of the present invention, at least aluminum, silicon, hydrogen, halogen and the like are unevenly distributed in the thickness direction on the support side of the light receiving layer. It is desirable to have a layer region contained in the state.

Further, for the purpose of further improving the adhesion between the support and the photoconductive layer or the charge injection blocking layer, for example, Si ₃ N ₄ , SiO ₂ , SiO or silicon atom is used as a base material, An adhesion layer formed of an amorphous material or the like containing a hydrogen atom and / or a halogen atom and at least one atom selected from a carbon atom, an oxygen atom, and a nitrogen atom may be provided.

Next, an apparatus and a film forming method for producing the light receiving layer of the present invention will be described in detail.

FIG. 4 is a schematic configuration diagram showing an example of an apparatus for manufacturing a light receiving member by a high frequency plasma CVD method (RF-PCVD) using an RF band as a power supply frequency. The configuration of the manufacturing apparatus shown in FIG. 4 is as follows.

This apparatus is roughly classified into a deposition apparatus (410)
0), a source gas supply device (4200), a reaction vessel (4
111) is constituted by an exhaust device (not shown) for reducing the pressure inside. A cylindrical support (4112), a heater for heating the support (4113), and a raw material gas introduction pipe (411) are provided in a reaction vessel (4111) in the deposition apparatus (4100).
4) is installed, and a high-frequency matching box (4)
115) are connected.

The source gas supply device (4200) is made of SiH
_{4, GeH 4, H 2,} CH 4, B 2 H 6, a cylinder of the source gas PH _3, etc. (4221 to 4226) and a valve (4231～
4236, 4241 to 4246, 4251 to 4256)
And mass flow controllers (4211-4216)
And the cylinder for each source gas is a valve (426
0) through the gas introduction pipe (4) in the reaction vessel (4111).
114).

The formation of a deposited film using this apparatus can be performed, for example, as follows.

First, the cylindrical support (4112) is set in the reaction vessel (4111), and the inside of the reaction vessel (4111) is evacuated by an exhaust device (for example, a vacuum pump) not shown. Subsequently, the temperature of the cylindrical support (4112) is increased from 200 ° C. to 350 ° C. by the support heating heater (4113).
Control to a predetermined temperature of ° C.

A source gas for forming a deposited film is supplied to a reaction vessel (41).
11), the gas cylinder valve (423)
1-4236), a leak valve of the reaction vessel (4117)
Is closed, and the inflow valve (42
41 to 4246), outflow valves (4251 to 425)
6) After confirming that the auxiliary valve (4260) is open, first open the main valve (4118) and exhaust the reaction vessel (4111) and the inside of the gas pipe (4116).

Next, the reading of the vacuum gauge (4119) is about 1 ×.
When the pressure becomes 10 ^-2 Pa, the auxiliary valve (4260) and the outflow valves (4251 to 4256) are closed.

Thereafter, gas cylinders (4221 to 422)
From 6), each gas is introduced by opening the valves (4231 to 4236), and each gas pressure is adjusted to 0.2 MPa by the pressure regulators (4261 to 4266). Next, the inflow valves (4241 to 4246) are gradually opened to introduce each gas into the mass flow controllers (4211 to 4216).

After preparation for film formation is completed as described above, each layer is formed in the following procedure.

When the temperature of the cylindrical support (4112) reaches a predetermined temperature, necessary ones of the outflow valves (4251 to 4256) and the auxiliary valve (4260) are gradually opened, and a predetermined amount is opened from the gas cylinders (4221 to 4266). Of the reaction vessel (411) through the gas introduction pipe (4114).
Introduce in 1). Next, the mass flow controller (4
211 to 4216), each raw material gas is adjusted so as to have a predetermined flow rate. At this time, the main valve (4111) is monitored while watching the vacuum gauge (4119) so that the pressure in the reaction vessel (4111) becomes a predetermined pressure of 1.5 × 10 ² Pa or less.
18) Adjust the opening. When the internal pressure is stabilized, an RF power supply (not shown) having a frequency of 13.56 MHz is set to a desired power, and a high-frequency matching box (4115)
RF power is introduced into the reaction vessel (4111) through
Generates glow discharge. The raw material gas introduced into the reaction vessel is decomposed by this discharge energy, and a deposited film containing silicon as a main component is formed on the cylindrical support (4112). After the formation of the desired film thickness, the supply of the RF power is stopped, the outflow valve is closed to stop the gas from flowing into the reaction vessel, and the formation of the deposited film is completed.

By repeating the same operation a plurality of times, a light receiving layer having a desired multilayer structure is formed. When forming each layer, it goes without saying that all the outflow valves other than the necessary gas are closed, and each gas flows into the reaction vessel (4111) and the outflow valve (4).
251 to 4256) to avoid remaining in the pipe from the reaction vessel (4111).
51 to 4256), the auxiliary valve (4260) is opened, the main valve (4118) is fully opened, and the system is once evacuated to a high vacuum as required.

In order to make the film formation uniform, it is also effective to rotate the support (4112) at a predetermined speed by a driving device (not shown) during the layer formation.

Further, it goes without saying that the above-mentioned gas types and valve operations are changed in accordance with the production conditions of each layer.

In the above-mentioned method, the temperature of the support at the time of forming the deposited film is particularly 200 ° C. or more and 350 ° C. or less, preferably 2 ° C. or less.
The temperature is preferably from 30 ° C to 330 ° C, more preferably from 250 ° C to 310 ° C. The heating method of the support may be a heating element having a vacuum specification, and more specifically, an electric resistance heating element such as a winding heater of a sheath heater, a plate heater, or a ceramic heater, a halogen lamp, an infrared lamp, or the like. A heat radiation lamp heating element, a heating element using a liquid, a gas, or the like as a heating medium and a heat exchange unit may be used. The surface material of the heating means is stainless steel, nickel, aluminum,
Metals such as copper, ceramics, heat-resistant polymer resins and the like can be used.

In addition, a method is also used in which a container dedicated to heating is provided in addition to the reaction container, and after heating, the support is transferred into the reaction container in a vacuum.

FIG. 5 shows an example of the image forming process of the electrophotographic apparatus. That is, the light receiving member 501 rotates to perform a copying operation. Around the light receiving member 501, a main charger 502, an electrostatic latent image forming portion 503, a developing device 504, a transfer paper supply system 505, a transfer charger 506 (a), a separation charger 506 (b), and a cleaner 507 are provided. , A transfer system 508, a static elimination light source 509, and the like.

The light receiving member 501 is uniformly charged by the main charger 502 to which a high voltage is applied, and is formed by the light (image exposure) emitted from the laser unit 518 through the mirror 519 to form an electrostatic latent image. Then, a negative or positive polarity toner is supplied to the latent image from the developing device 504 to form a toner image. The signal from the CCD is used for controlling the laser unit 518. That is, the lamp 5
Light emitted from 10 is reflected on a document 512 placed on a document table glass 511, passes through mirrors 513, 514, 515, forms an image by a lens of a lens unit 516, and is converted into an electric signal by a CCD unit 517. Signal is led.

On the other hand, the leading end timing is adjusted by the registration roller 522 through the transfer paper supply system 505, and the transfer material P supplied in the direction of the light receiving member 501 is transferred to the transfer charger 506 (a) to which a high voltage is applied. Light receiving member 50
An electric field having a polarity opposite to that of the toner is applied to the transfer material P from the back surface in the gap 1, whereby the negative or positive polarity toner image on the surface of the light receiving member is transferred to the transfer material P. Then, high pressure A
By the separation charger 506 (b) to which the C voltage is applied, the transfer material P reaches the fixing device 523 through the transfer / transport system 508, where the toner image is fixed, and is carried out of the device.

The toner remaining on the light receiving member 501 is removed by the cleaning blade 52 of the cleaning unit 507.
1 and the remaining electrostatic latent image is
9 erased.

With respect to the electrophotographic apparatus as described above, the present invention relates to an image forming apparatus including an electrophotographic light receiving member, a charge removing means, a charging means, an image exposing means, a developing means, and a transferring means. In an electrophotographic apparatus for forming, an electrophotographic apparatus using light having a wavelength of not less than 550 nm and not more than 700 nm as an electricity removing means and using light having a wavelength of not less than 500 nm and not more than 700 nm as an image exposing means is provided. Such an electrophotographic apparatus is suitable as a copying machine, a printer, and the like.

[0155]

EXAMPLES The effects of the present invention will be specifically described below with reference to examples.

<Experimental Example 1> The conditions shown in Table 1 were applied to a mirror-finished aluminum cylinder (conductive support) having a diameter of 108 mm using the apparatus for manufacturing a light receiving member by the RF-PCVD method shown in FIG. In this manner, a charge injection blocking layer, a photoconductive layer (first layer region, second layer region) and a surface layer were formed in this order to produce a light receiving member for electrophotography (Example 1).

The light-receiving member for electrophotography (Example 1) was analyzed by SIMS (IMS-4F, manufactured by CAMECA), and the hydrogen content (Ch) relative to silicon atoms and the hydrogen content relative to silicon atoms in the photoconductive layer were measured. The content of group 13 atoms (C13) was measured. Ch of the photoconductive layer in Table 1
Is 30 atomic% on the conductive support side and 17 atomic% on the surface side, as shown in FIG. 2 (a). C13 is constant at 2 atomic ppm in the first layer region, and C13 is constant in the second layer region. 2p
pm → 0.7 atomic ppm, as shown in FIG.

The prepared electrophotographic light-receiving member was set in an electrophotographic apparatus, and the potential characteristics were evaluated as follows.

As an experimental machine, NP-665 manufactured by Canon was used.
0 was a process speed of 470 mm / sec, pre-exposure (700 nm wavelength LED) 7 lux · sec, and image exposure (680 nm wavelength LED or semiconductor laser) and an apparatus modified for experiments were used.

A photoreceptor for electrophotography was placed on this experimental machine, and a surface electrometer (Mounted by TREK, Mo.) was set at the developing device position of the electrophotographic apparatus under the conditions of a current value of the charger of 1 mA.
The surface potential of the light-receiving member was measured by a potential sensor (del 344), and the measured value was used as the charging ability. Further, the surface potential at the time of image exposure of 1.5 lux · sec was measured, and the measured value was regarded as a residual potential. Further, the charging conditions were set so that the dark potential was 400 V, and the image exposure value when the surface potential was 50 V was used as the sensitivity. In addition, the memory potential was evaluated by measuring the potential difference between the surface potential in the non-image exposure state under the above-described conditions and the time when the image was exposed and then charged again.

The dot reproducibility was evaluated by comparing the size of the toner image on the light receiving member with respect to the laser spot diameter. A laser having a spot diameter of 50 μm was used for image exposure to form a 1-dot electrostatic latent image on the light receiving member, and a toner image was formed on the light receiving member using a toner having an average particle diameter of 8 μm. The ratio between the maximum diameter of the toner image on the light receiving member and the diameter of the laser spot was defined as dot reproducibility.

The image characteristics were also evaluated using a halftone image, a text original and a photo original.

The evaluation results are as follows. In Table 1, the photoconductive layer (layer thickness: 30 μm) is composed of only the first layer region, and H ₂
An electrophotographic light-receiving member (electrophotographic light-receiving member A) manufactured under the conditions shown in Table 1 except that the flow rate was kept constant at 1100 mL / min (normal), ie, Ch and C
Based on the electrophotographic light-receiving member having a fixed value of 13,
：: 20% or more improvement over light receiving member A for electrophotography ○: 10% to 20% improvement over light receiving member A for electrophotography Δ: Light receiving member for electrophotography ×: worse than light receiving member A for electrophotography.

Table 2 shows the results. As is clear from Table 2, the hydrogen atoms of the photoconductive layer are reduced from the conductive support side toward the surface side, and the atoms belonging to Group 13 of the periodic table in the second layer region are changed to the conductive support side. From the surface to the surface side, charging ability, residual potential,
It was found that sensitivity, memory potential and dot reproducibility could all be improved. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. When I copied the text manuscript further,
A clear image with a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0165]

[Table 1]

[0166]

[Table 2]

<Experimental Example 2> The ratio (Ch ratio) of Ch on the surface side to Ch on the conductive support side of the photoconductive layer was 0.35,
Various electrophotographic lights in the same manner as in Experimental Example 1 except that the gas flow rate, the discharge power, the temperature of the support, and the like were changed to 0.4, 0.6, 0.8, 0.95, and 0.97. A receiving member (Example 2-1 to Example 2-6) was produced.

The prepared various electrophotographic light-receiving members were evaluated for charging ability, residual potential, sensitivity, memory potential, and dot reproducibility in the same manner as in Experimental Example 1. The results are shown in Table 3. As is apparent from Table 3, when the ratio of Ch on the surface side to Ch on the conductive support side of the photoconductive layer is 0.4 to 0.95, charging ability, residual potential, sensitivity, memory potential, and dot reproduction are obtained. All properties were found to be particularly good. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0169]

[Table 3]

<Experimental Example 3> The ratio of C13 on the surface side to C13 on the conductive support side in the second layer region of the photoconductive layer (C
13 ratio) to 0.02, 0.05, 0.2, 0.4, 0.
Various light receiving members for electrophotography (Examples 3-1 to 3-6) in the same manner as in Experimental Example 1 except that the gas flow rate, the discharge power, the temperature of the support, and the like were changed so as to be 6 and 0.65. ) Was prepared.

With respect to the various electrophotographic light-receiving members thus produced, charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were evaluated in the same manner as in Experimental Example 1, and the results are shown in Table 4. As is clear from Table 4, in the second layer region of the photoconductive layer, when the ratio of C13 on the surface side to C13 on the conductive support side is 0.05 to 0.6, the chargeability, residual potential, sensitivity, It was found that both the memory potential and the dot reproducibility were particularly good. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0172]

[Table 4]

<Experimental example 4> In the second layer region, C13 of the photoconductive layer was changed from 2 ppm to 1 ppm (0.167 ppm / μm
6) → 2 ppm in the first layer region
(Reduced by 0.167ppm / μm) 5ppm → 2ppm
(Reduced by 0.125 ppm / μm) 3 ppm → 2 ppm
(Reduced by 0.0417 ppm / μm) Various light receiving members for electrophotography were prepared in the same manner as in Experimental Example 1 except that the gas flow rate, the discharge power, the temperature of the support, etc. were changed so as to be constant at 2 ppm (no change). Example 4-1 to Example 4-4) were produced. Also, C13 at this time is as shown in FIG.
Adjustment was made to change to (b).

The prepared various electrophotographic light-receiving members were evaluated for charging ability, residual potential, sensitivity, memory potential, and dot reproducibility in the same manner as in Experimental Example 1. The results are shown in Table 5. As is clear from Table 5, in the first layer region, C13 is almost constant from the conductive support side to the surface side, or the rate at which C13 decreases per unit film thickness from the support side to the surface side is the second. It was found that when the rate of decrease in the second layer area was smaller than that, the chargeability, residual potential, sensitivity, memory potential, and dot reproducibility were all particularly good. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0175]

[Table 5]

<Experiment 5> The total thickness of the photoconductive layer was 30 μm.
With the film thickness of the second layer region kept constant, 0.3 μm, 0.5 μm
m, 2 μm, 7 μm, 10 μm, 15 μm and 17 μm
Various light receiving members for electrophotography (Examples 5-1 to 5-7) were produced in the same manner as in Experimental Example 1 except that the above conditions were changed.

The prepared various electrophotographic light receiving members were evaluated for charging ability, residual potential, sensitivity, memory potential, and dot reproducibility in the same manner as in Experimental Example 1. The results are shown in Table 6. As is clear from Table 6, when the film thickness of the second layer region of the photoconductive layer is 0.5 μm to 15 μm, all of the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility are particularly good. It turned out to be. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

[0178]

[Table 6]

<Experimental Example 6> Electrophotography was performed by forming a charge injection blocking layer, a photoconductive layer (first layer region, second layer region) and a surface layer under the conditions shown in Table 1 of Experimental Example 1. A light receiving member was prepared. Then, as an electrophotographic apparatus (Example 6-1 to Example 6-4), a combination of pre-exposure (PE) and image exposure (IE) is performed using PE / IE = 550 nm / 500 nm, P
E / IE = 600 nm / 550 nm, PE / IE = 66
0 nm / 600 nm, PE / IE = 700 nm / 700
In the same manner as in Experimental Example 1, the charging ability, the residual potential, the sensitivity, the memory potential, and the dot reproducibility were evaluated.

As a result, PE was 550 nm to 70 nm.
A wavelength of 0 nm is used, and the IE is 500 nm to 700 nm.
It was found that the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were all as good as in Experimental Example 1 in any combination of PE and IE using a wavelength of nm. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained.

<Embodiment 7> Using the manufacturing apparatus shown in FIG. 4 and having the surface layer in which the content of silicon atoms and carbon atoms in the surface layer is non-uniformly distributed in the thickness direction under the conditions shown in Table 7. A light receiving member was formed in the order of a charge injection blocking layer, a photoconductive layer (first layer region, second layer region), and a surface layer. Table 7
Of the photoconductive layer is 33 atomic% on the conductive support side and 15 atomic% on the surface side, and C13 is 1.% in the first layer region.
5 ppm constant, 1.5 ppm in the second layer region → 0.
It was 7 ppm. Then, Ch and C13 were adjusted so as to be different from FIGS. 2B and 3B, respectively.

Pre-exposure 6
Evaluation was performed in the same manner as in Experimental Example 1 at 60 nm and image exposure at 680 nm. As in Experimental Example 1, it was found that the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were all good. Was. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained. That is, it was found that good electrophotographic characteristics were obtained even when the surface layer in which the content of silicon atoms and carbon atoms in the surface layer was unevenly distributed in the layer thickness direction was provided in the present invention.

[0183]

[Table 7]

<Embodiment 8> Using the manufacturing apparatus shown in FIG. 4, under the conditions shown in Table 8, a surface layer is provided in which the content of silicon atoms and carbon atoms in the surface layer is unevenly distributed in the thickness direction. In addition, a light receiving member containing a fluorine atom, a boron atom, a carbon atom, an oxygen atom, and a nitrogen atom in all layers is provided with a charge injection preventing layer, a photoconductive layer (a first layer region, a second layer region) and a surface. The layers were formed in the order of layers. Ch of the photoconductive layer in Table 8
Is 35 atomic% on the conductive support side and 17 atomic% on the surface side, and C13 is 4 ppm → 3 ppm in the first layer region.
Thus, in the second layer region, 3 ppm → 1 ppm. Then, Ch was changed to FIG. 2 (c) or (c), and C13 was changed to FIG. 3 (c) or (e), respectively, to produce four types of electrophotographic light-receiving members.

Pre-exposure 6
Evaluation was performed at 60 nm and image exposure at 660 nm in the same manner as in Experimental Example 1. As in Experimental Example 1, it was found that the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were all good. Was. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained. That is, while providing a surface layer in which the content of silicon atoms and carbon atoms in the surface layer is non-uniformly distributed in the thickness direction, fluorine, boron, carbon, oxygen, and nitrogen atoms are present in all the layers. It has been found that good electrophotographic properties can be obtained even in the case of containing.

[0186]

[Table 8]

<Embodiment 9> Using the manufacturing apparatus shown in FIG.
Under the conditions shown in Table 9, the photoreceptor member containing nitrogen atoms instead of carbon atoms as the molecules constituting the surface layer was used as a charge injection blocking layer, a photoconductive layer (first layer region, second layer region). )
And a surface layer. Ch of the photoconductive layer in Table 9 is 20 atom% on the conductive support side and 10 atom% on the surface side, and C13 is 3 ppm → 2 ppm in the first layer region.
In the second layer region, it was 2 ppm → 0.8 ppm. Then, Ch was changed to FIG. 2D or 2F to produce four types of electrophotographic light-receiving members.

The light receiving member for electrophotography was pre-exposed 5
Evaluation was performed in the same manner as in Experimental Example 1 at 50 nm and image exposure at 600 nm. As in Experimental Example 1, it was found that the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were all good. Was. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained. That is, it has been found that good electrophotographic characteristics can be obtained even when a surface layer containing nitrogen atoms instead of carbon atoms as atoms constituting the surface layer is provided.

[0189]

[Table 9]

Example 10 Using a manufacturing apparatus shown in FIG. 4, a light receiving member containing nitrogen atoms and carbon atoms as atoms constituting a surface layer under the conditions shown in Table 10 was used to form a charge injection preventing layer. A photoconductive layer (first layer region, second layer region) and a surface layer were formed in this order. C of the photoconductive layer in Table 10
h is 33 atomic% on the conductive support side and 14 atomic% on the surface side
And C13 is 5 ppm → 3 ppm in the first layer region.
Thus, in the second layer region, it was 3 ppm → 0.5 ppm. Then, Ch and C13 were adjusted so as to change from FIGS. 2 (g) and 3 (g), respectively.

The light receiving member for electrophotography was pre-exposed 7
Evaluation was performed at 00 nm and image exposure of 660 nm in the same manner as in Experimental Example 1. As in Experimental Example 1, it was found that the charging ability, residual potential, sensitivity, memory potential, and dot reproducibility were all good. Was. Also, it was found that a uniform and good image was obtained without unevenness in the halftone image in image characteristics. Further, when the text original was copied, a clear image having a high black density was obtained. Also, in copying a photo original, a clear image faithful to the original could be obtained. That is, as atoms constituting the surface layer,
It was found that good electrophotographic characteristics were obtained even when a surface layer containing nitrogen atoms and oxygen atoms was provided.

[0192]

[Table 10]

[0193]

According to the present invention, at a high process speed, the wavelength of the exposure light source can secure sufficient chargeability from short to long wavelengths, improve sensitivity, reduce optical memory, and improve dot reproducibility. The photoreceptor member for electrophotography, which is realized in two dimensions, improves the stability of the photoreceptor member in the use environment, and can stably obtain high-quality images with clear halftones and high resolution. Can be

Therefore, by adopting the specific configuration as described above for the electrophotographic light receiving member of the present invention, it is possible to solve all the problems of the conventional electrophotographic light receiving member made of a-Si. As a result, excellent electrical characteristics, optical characteristics, photoconductive characteristics, image characteristics, durability and use environment characteristics can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view for explaining an example of an electrophotographic light-receiving member of the present invention.

FIG. 2 is a schematic diagram illustrating a distribution example of the content of hydrogen atoms in a photoconductive layer according to the present invention.

FIG. 3 is a schematic diagram illustrating a distribution example of the content of Group 13 atoms in a photoconductive layer according to the present invention.

FIG. 4 is a schematic explanatory view showing an example of an apparatus for manufacturing a light receiving member for electrophotography according to the present invention.

FIG. 5 is a schematic sectional view for explaining the electrophotographic apparatus of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 light receiving member for electrophotography 101 support 102 light receiving layer 103 photoconductive layer 104 surface layer 105 charge injection blocking layer 106 free surface 111 first layer region 112 second layer region 501 light receiving member 502 main charger 503 Electrostatic latent image forming portion 504 Developing device 505 Transfer paper supply system 506 (a) Transfer charger 506 (b) Separation charger 507 Cleaning roller 508 Transport system 509 Static elimination light source 510 Halogen lamp 511 Document table 512 Document 513 Mirror 514 Mirror 515 Mirror 516 Lens unit 517 CCD unit 518 Laser unit 519 Mirror 520 Blank exposure LED 521 Cleaning blade 522 Registration roller 523 Fixing device 4100 Deposition device 4111 Reaction container 4112 Cylindrical support 41 3 Heater for Support Heater 4114 Source Gas Inlet Pipe 4115 Matching Box 4116 Source Gas Pipe 4117 Reaction Vessel Leak Valve 4118 Main Exhaust Valve 4119 Vacuum Gauge 4200 Source Gas Supply Device 4211 Mass Flow Controller 4212 Mass Flow Controller 4213 Mass Flow Controller 4214 Mass Flow Controller 4215 Mass Flow Controller 4216 Mass flow controller 4221 Source gas cylinder 4221 Source gas cylinder 4223 Source gas cylinder 4224 Source gas cylinder 4225 Source gas cylinder 4226 Source gas cylinder 4231 Source gas cylinder valve 4232 Source gas cylinder valve 4233 Source gas cylinder valve 4234 Source gas cylinder valve 4235 Source gas cylinder Gas valve 4236 Raw material gas cylinder valve 4241 Gas inflow valve 4242 Gas inflow valve 4243 Gas inflow valve 4244 Gas inflow valve 4245 Gas inflow valve 4246 Gas inflow valve 4251 Gas outflow valve 4252 Gas outflow valve 4253 Gas outflow valve 4254 Gas outflow valve 4255 Gas outflow valve 4256 Gas outflow valve 4260 Auxiliary valve 4261 Pressure regulator 4262 Pressure regulator 4263 Pressure regulator 4264 Pressure regulator 4265 Pressure regulator 4266 Pressure regulator

Continuing on the front page (72) Inventor Makoto Aoki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Hiroaki Shinno 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. F term (reference) 2H035 AA10 AB03 2H068 DA28 DA35 DA41 FA01 FA18 2H076 DA09 DA37 4K030 AA06 AA10 AA17 AA20 BA24 BA30 BA55 BB12 CA02 CA16 FA03 JA06 LA04 LA17

Claims (6)

[Claims] 1. A support comprising: a support; and at least a first and a second layer region from the support side to the surface side.
Hydrogenated amorphous silicon containing group 3 atoms (a-
A photoreceptor member for electrophotography, comprising: a Si: H) -based photoconductive layer, wherein the content of hydrogen atoms decreases from the support side toward the surface side; A light receiving member for electrophotography, wherein the content of group atoms decreases from the support side toward the surface side. 2. In the photoconductive layer, the ratio of the content of hydrogen atoms on the surface side to the content of hydrogen atoms on the support side is 0.4 or more.
95 or less, and in the second layer region, the ratio of the content of group 13 atoms on the surface side to the content on the support side is 0.1%.
2. The electrophotographic light-receiving member according to claim 1, wherein the light-receiving member is from 0.05 to 0.6. 3. The light receiving member for electrophotography according to claim 1, wherein the content of Group 13 atoms in the first layer region is constant from the support side toward the surface side. 4. The rate of decrease in the content of Group 13 atoms per unit film thickness from the support side to the surface side in the first layer region is smaller than that in the second layer region. The light receiving member for electrophotography according to claim 1 or 2, wherein 5. The electrophotographic light-receiving member according to claim 1, wherein the thickness of the second layer region is 0.5 μm or more and 15 μm or less. 6. An image forming apparatus comprising the light receiving member for electrophotography according to claim 1, a charge removing means, a charging means, an image exposing means, a developing means, and a transferring means. An electrophotographic apparatus, wherein the charge removing means has a wavelength of 550.
An electrophotographic apparatus, wherein light having a wavelength of 500 nm or more and 700 nm or less is used as the image exposure means.