JP2002110986A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2002110986A JP2002110986A JP2000296126A JP2000296126A JP2002110986A JP 2002110986 A JP2002110986 A JP 2002110986A JP 2000296126 A JP2000296126 A JP 2000296126A JP 2000296126 A JP2000296126 A JP 2000296126A JP 2002110986 A JP2002110986 A JP 2002110986A
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- Prior art keywords
- voltage
- electrode
- power chip
- chip
- diode
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置に関し、
特に電力変換回路のスイッチング素子として用いられる
パワーチップとその過電流を検出する過電流検出回路を
有する駆動回路とを備えた半導体装置に関する。The present invention relates to a semiconductor device,
In particular, the present invention relates to a semiconductor device including a power chip used as a switching element of a power conversion circuit and a drive circuit having an overcurrent detection circuit for detecting an overcurrent of the power chip.
【０００２】[0002]
【従来の技術】従来、モータの可変速制御や電源装置等
の電力変換回路のスイッチング素子として用いられるＩ
ＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａ
ｒ Ｔｒａｎｓｉｓｔｏｒ：絶縁ゲート型バイポーラト
ランジスタ）等のパワーチップを有する半導体装置に
は、パワーチップを含む素子を過電流破壊から保護する
ための過電流保護機能が設けられている。これらの半導
体装置として、ＩＧＢＴを例にとり、過電流保護機能に
ついて説明する。2. Description of the Related Art Conventionally, an I / O used as a switching element of a power conversion circuit such as a variable speed control of a motor or a power supply device is conventionally used.
GBT (Insulated Gate Bipola)
A semiconductor device having a power chip such as an rTransistor (insulated gate bipolar transistor) is provided with an overcurrent protection function for protecting an element including the power chip from overcurrent destruction. An overcurrent protection function will be described using an IGBT as an example of these semiconductor devices.
【０００３】ＩＧＢＴを過電流破壊から保護するため、
ＩＧＢＴのコレクタ電極とエミッタ電極間の電圧（以
下、ＶＣＥ電圧とする）を測定し、ＶＣＥ電圧と電流値
との関係から一定のＶＣＥ電圧を超えたら過電流状態で
あると判定し、駆動回路の出力電圧を下げるか、または
出力電圧をゼロに下げることにより電流を遮断する方法
がよく知られている。このような例として、特許第２９
１３６９９号がある。In order to protect the IGBT from overcurrent destruction,
The voltage between the collector electrode and the emitter electrode of the IGBT (hereinafter, referred to as VCE voltage) is measured, and if a certain VCE voltage is exceeded from the relationship between the VCE voltage and the current value, it is determined that an overcurrent state has occurred. It is well known how to cut off the current by lowering the output voltage or reducing the output voltage to zero. As such an example, Patent No. 29
No. 13699.
【０００４】具体的な実施例について説明する。図７
は、従来の過電流検出機能を有するＩＧＢＴ及び駆動回
路の回路接続図である。ＩＧＢＴチップが内蔵されたパ
ワーモジュール３１０は、ＩＧＢＴのコレクタ電極、エ
ミッタ電極、及びゲート電極を半導体装置の上面や側面
に設けた金属端子により、装置のケース外部に取り出
す。外部に取り出された金属端子を、それぞれコレクタ
端子Ｃ、エミッタ端子Ｅ、ゲート端子Ｇとする。コレク
タ端子Ｃには、ＶＣＥ電圧検出用ダイオード３２０のカ
ソード電極を接続し、ゲート端子Ｇには、駆動回路２１
０のドライブ出力端子ＤＯＵＴを接続する。ＶＣＥ電圧
検出用ダイオード３２０は、上記説明のように、カソー
ド電極はパワーモジュール３１０のコレクタ端子Ｃに接
続し、アノード電極は、駆動回路２１０のＶＣＥ電圧検
出端子ＤＶＣＥに接続する。A specific embodiment will be described. FIG.
FIG. 2 is a circuit connection diagram of a conventional IGBT having an overcurrent detection function and a drive circuit. The power module 310 with the built-in IGBT chip takes out the collector electrode, the emitter electrode, and the gate electrode of the IGBT out of the case of the device by using metal terminals provided on the upper surface and side surfaces of the semiconductor device. The metal terminals taken out are referred to as a collector terminal C, an emitter terminal E, and a gate terminal G, respectively. The collector terminal C is connected to the cathode electrode of the VCE voltage detecting diode 320, and the gate terminal G is connected to the drive circuit 21.
0 drive output terminal DOUT is connected. As described above, the VCE voltage detection diode 320 has a cathode electrode connected to the collector terminal C of the power module 310 and an anode electrode connected to the VCE voltage detection terminal DVCE of the drive circuit 210.
【０００５】このような構成の半導体装置では、駆動回
路２１０は、ＶＣＥ電圧検出用ダイオード３２０により
検出されるＶＣＥ電圧を監視し、ＶＣＥ電圧と電流値と
の関係から一定のＶＣＥ電圧を超えたら過電流状態であ
ると判定し、駆動回路２１０のドライブ出力端子ＤＯＵ
Ｔへの出力電圧を下げるか、または出力電圧をゼロに下
げることにより電流を遮断する。In the semiconductor device having such a configuration, the drive circuit 210 monitors the VCE voltage detected by the VCE voltage detecting diode 320, and if the voltage exceeds a certain VCE voltage based on the relationship between the VCE voltage and the current value, the drive circuit 210 detects an error. It is determined that a current state is present, and the drive output terminal DOU of the drive circuit 210 is determined.
The current is interrupted by reducing the output voltage to T or by reducing the output voltage to zero.
【０００６】[0006]
【発明が解決しようとする課題】しかし、従来の過電流
を検出する半導体装置では、コレクタ電極と過電流検出
回路との間の配線インダクタンスがＶＣＥ電圧の検出精
度に影響を与えるという問題がある。However, in the conventional semiconductor device for detecting overcurrent, there is a problem that the wiring inductance between the collector electrode and the overcurrent detection circuit affects the accuracy of detecting the VCE voltage.
【０００７】上記説明の従来の半導体装置においては、
通常ＩＧＢＴチップは、半導体装置の底部にある基板の
導体にコレクタ電極面が固着されている。その導体から
装置上面にあるコレクタ端子までは、金属線または金属
バーを介して接続されており、コレクタ電極からコレク
タ端子までの間に浮遊インダクタンスが存在する。In the conventional semiconductor device described above,
Normally, an IGBT chip has a collector electrode surface fixed to a conductor of a substrate at the bottom of a semiconductor device. The conductor is connected to the collector terminal on the upper surface of the device via a metal wire or a metal bar, and a stray inductance exists between the collector electrode and the collector terminal.
【０００８】近年、ＩＧＢＴチップ性能が改良され、よ
り低損失化された反面電流変化率（ｄｉ／ｄｔ）が大き
くなってきており、このｄｉ／ｄｔとコレクタ端子まで
のインダクタンスで発生する電圧が高くなっている。こ
の発生電圧は、上記説明のＶＣＥ電圧検出による過電流
検出・保護機能を有する回路では、ＩＧＢＴチップのＶ
ＣＥ電圧が見かけ上高く検出されたり、あるいは低く検
出されたりするように働く。このため、電流変化が大き
いＩＧＢＴチップのスイッチング電流変化が終わるまで
ＶＣＥ検出値を測定しないような方法がとられている。
しかしながら、低オン電圧特性を持つＩＧＢＴチップ
は、回路が短絡した場合の過電流が流れやすく、電流の
立ち上がりも早い。このため、過電流現象が発生したら
早く検出し、駆動回路を遮断する必要があり、ＶＣＥ電
圧の測定が遅くなることは問題である。In recent years, the IGBT chip performance has been improved and the loss has been reduced, while the current change rate (di / dt) has been increasing, and the voltage generated by this di / dt and the inductance to the collector terminal has been increased. Has become. In the circuit having the overcurrent detection / protection function based on the VCE voltage detection described above, the generated voltage
The CE voltage serves to detect an apparently high or low CE voltage. For this reason, a method is adopted in which the VCE detection value is not measured until the switching current change of the IGBT chip having a large current change ends.
However, an IGBT chip having a low on-voltage characteristic tends to cause an overcurrent when a circuit is short-circuited, and the current rises quickly. For this reason, if an overcurrent phenomenon occurs, it is necessary to detect it early and shut off the drive circuit, and there is a problem that the measurement of the VCE voltage becomes slow.
【０００９】また、上記説明のモジュールの外付けＶＣ
Ｅ電圧検出方式では、ＶＣＥ検出点から検出ダイオード
を通り、ＶＣＥ検出機能付駆動回路までの距離が長く、
ここにも浮遊インダクタンスが存在する。ＩＧＢＴチッ
プやＩＧＢＴチップと逆並列に接続された還流用ダイオ
ードチップ（以下、ＦＷＤチップとする）に発生する電
圧変化率（ｄｖ／ｄｔ）が高いと、ＶＣＥ電圧検出ダイ
オードの逆方向に電流が流れ、その電流変化と浮遊イン
ダクタンスにより、駆動回路のＶＣＥ検出端子電圧を変
えてしまうという問題がある。さらに、この時に駆動回
路に過大な電圧が印加されるという問題もある。Further, the external VC of the module described above
In the E voltage detection method, the distance from the VCE detection point to the drive circuit with the VCE detection function through the detection diode is long,
There is also a stray inductance here. If the voltage change rate (dv / dt) generated in the IGBT chip or the freewheeling diode chip (hereinafter referred to as FWD chip) connected in antiparallel with the IGBT chip is high, current flows in the reverse direction of the VCE voltage detection diode. There is a problem that the VCE detection terminal voltage of the drive circuit is changed due to the current change and the stray inductance. Further, there is a problem that an excessive voltage is applied to the drive circuit at this time.
【００１０】本発明はこのような点に鑑みてなされたも
のであり、配線により生じる浮遊インダクタンスを削減
し、ＶＣＥ電圧の検出精度を向上させることで、過電流
の検出精度を上げる半導体装置を提供することを目的と
する。The present invention has been made in view of the above points, and provides a semiconductor device that reduces the stray inductance generated by wiring and improves the accuracy of detecting a VCE voltage, thereby increasing the accuracy of detecting an overcurrent. The purpose is to do.
【００１１】[0011]
【課題を解決するための手段】本発明では上記課題を解
決するために、パワーチップとその駆動回路とを備えた
半導体装置において、電力変換回路のスイッチング素子
として用いられるパワーチップと、前記パワーチップが
駆動時に前記パワーチップの入力側主電極の電圧を検出
する検出回路と、前記検出回路の検出した電圧を監視
し、前記電圧が所定の値を超えたことにより前記パワー
チップが過電流状態であることを検出する過電流検出回
路を有し、検出結果に応じて前記パワーチップへの駆動
信号を制御する駆動回路と、を同一容器に内蔵するとと
もに、前記パワーチップの入力側主電極が固着された導
体と同一の導体に前記検出回路の入力電極を固着し、前
記検出回路の電圧出力電極と前記駆動回路の電圧検出電
極とを接続したことを特徴とする半導体装置、が提供さ
れる。According to the present invention, in order to solve the above-mentioned problems, in a semiconductor device provided with a power chip and a driving circuit thereof, a power chip used as a switching element of a power conversion circuit; A detection circuit that detects the voltage of the input side main electrode of the power chip during driving, monitors the voltage detected by the detection circuit, and when the voltage exceeds a predetermined value, the power chip is in an overcurrent state. And a drive circuit for controlling a drive signal to the power chip according to the detection result in the same container, and the input side main electrode of the power chip is fixed. The input electrode of the detection circuit is fixed to the same conductor as the selected conductor, and the voltage output electrode of the detection circuit is connected to the voltage detection electrode of the drive circuit. The semiconductor device according to claim, is provided.
【００１２】このような構成の半導体装置は、電力変換
回路のスイッチング素子として用いられるパワーチップ
と、パワーチップが駆動時におけるパワーチップの入力
側主電極の電圧を検出する検出回路と、検出回路の検出
した電圧を監視して過電流状態を検出する過電流検出回
路を有し、検出結果に応じてパワーチップへの駆動信号
を調整する駆動回路と、が同一の容器内に内蔵されてい
る。パワーチップの入力側主電極と、検出回路の入力電
極と、を同一基板上の同一導体に固着し、検出回路の電
圧出力電極と駆動回路の電圧検出電極とを接続する。検
出回路の入力電極がパワーチップの入力側主電極に近接
するとともに、駆動回路内に設けられた過電流検出部ま
での距離が短くなる。A semiconductor device having such a configuration includes a power chip used as a switching element of a power conversion circuit, a detection circuit for detecting a voltage of an input-side main electrode of the power chip when the power chip is driven, A drive circuit that has an overcurrent detection circuit that monitors the detected voltage to detect an overcurrent state and that adjusts a drive signal to the power chip according to the detection result is built in the same container. The input side main electrode of the power chip and the input electrode of the detection circuit are fixed to the same conductor on the same substrate, and the voltage output electrode of the detection circuit is connected to the voltage detection electrode of the drive circuit. The input electrode of the detection circuit is close to the input-side main electrode of the power chip, and the distance to the overcurrent detection unit provided in the drive circuit is reduced.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。ここでは、本発明に係る半導体装
置として、パワーチップがＩＧＢＴである場合を例にと
って説明する。図１は、本発明の一実施の形態である半
導体装置の回路接続図である。これは、本発明に係る半
導体装置の第１の実施例である。Embodiments of the present invention will be described below with reference to the drawings. Here, a case where the power chip is an IGBT will be described as an example of the semiconductor device according to the present invention. FIG. 1 is a circuit connection diagram of a semiconductor device according to an embodiment of the present invention. This is a first embodiment of the semiconductor device according to the present invention.
【００１４】本発明に係る半導体装置は、パワーチップ
１１０、パワーチップ１１０のＶＣＥ電圧を検出するＶ
ＣＥ電圧検出用ダイオードチップ１２０、及び過電流検
出回路を備えた駆動回路２１０とが、同一の容器に内蔵
されている。In the semiconductor device according to the present invention, the power chip 110 and the VCE for detecting the VCE voltage of the power chip 110 are provided.
The CE voltage detection diode chip 120 and the drive circuit 210 including the overcurrent detection circuit are built in the same container.
【００１５】パワーチップ１１０は、電力変換回路のス
イッチング素子として用いられるＩＧＢＴチップであ
る。パワーチップ１１０の入力側主電極であるコレクタ
電極は、ＶＣＥ電圧検出用ダイオードチップ１２０のカ
ソード電極と同一導体面上で接続している。また、ゲー
ト電極は、駆動回路２１０のドライブ出力端子ＤＯＵＴ
と接続する。コレクタ電極及びエミッタ電極は、パワー
チップ１１０より引き出され、装置表面に設けられたコ
レクタ端子Ｃ及びエミッタ端子Ｅに接続する。The power chip 110 is an IGBT chip used as a switching element of a power conversion circuit. The collector electrode, which is the input-side main electrode of the power chip 110, is connected to the cathode electrode of the diode chip 120 for VCE voltage detection on the same conductor surface. The gate electrode is connected to the drive output terminal DOUT of the drive circuit 210.
Connect with The collector electrode and the emitter electrode are drawn from the power chip 110 and connected to the collector terminal C and the emitter terminal E provided on the surface of the device.
【００１６】ＶＣＥ電圧検出用ダイオードチップ１２０
は、パワーチップ１１０が駆動時にパワーチップ１１０
のコレクタ電極の電圧を検出する。ＶＣＥ電圧検出用ダ
イオードチップ１２０のカソード電極は、パワーチップ
１１０のコレクタ電極と同一導体面上で接続し、アノー
ド電極は、アルミワイヤなどで引き出して過電流検出回
路を備えた駆動回路２１０のＶＣＥ電圧検出端子ＤＶＣ
Ｅに接続する。VCE voltage detecting diode chip 120
Is the power chip 110 when the power chip 110 is driven.
Of the collector electrode is detected. The cathode electrode of the VCE voltage detection diode chip 120 is connected on the same conductor surface as the collector electrode of the power chip 110, and the anode electrode is pulled out with an aluminum wire or the like, and the VCE voltage of the drive circuit 210 having an overcurrent detection circuit is provided. Detection terminal DVC
Connect to E.
【００１７】駆動回路２１０は、ＶＣＥ電圧検出用ダイ
オードチップ１２０の検出したＶＣＥ電圧を監視し、Ｖ
ＣＥ電圧が所定の値を超えたことによりパワーチップ１
１０が過電流状態であることを検出する過電流検出回路
を有し、検出結果に応じてパワーチップ１１０への駆動
信号を制御する。駆動回路２１０に供給される電源のグ
ランド電位はパワーチップ１１０のエミッタ電位と接続
され、エミッタ電位を基準として、駆動回路２１０の内
部（パワーチップ１１０の駆動回路や過電流検出回路
等）が動作する。駆動回路２１０のドライブ出力端子Ｄ
ＯＵＴは、パワーチップのゲート電極にアルミワイヤ等
で接続され、ゲート電極に与える電圧によってパワーチ
ップ１１０をオン／オフ制御する。The drive circuit 210 monitors the VCE voltage detected by the VCE voltage detection diode chip 120, and
When the CE voltage exceeds a predetermined value, the power chip 1
10 has an overcurrent detection circuit for detecting an overcurrent state, and controls a drive signal to the power chip 110 according to the detection result. The ground potential of the power supply supplied to the drive circuit 210 is connected to the emitter potential of the power chip 110, and the inside of the drive circuit 210 (the drive circuit of the power chip 110, the overcurrent detection circuit, and the like) operates based on the emitter potential. . Drive output terminal D of drive circuit 210
OUT is connected to a gate electrode of the power chip by an aluminum wire or the like, and controls ON / OFF of the power chip 110 by a voltage applied to the gate electrode.
【００１８】このような構成の半導体装置の動作につい
て説明する。パワーチップ１１０のゲート電極に閾値以
上の電圧が与えられるとＩＧＢＴがターンオンし、ＶＣ
Ｅ電圧検出用ダイオードチップ１２０が順バイアスされ
てオンする。駆動回路２１０のＶＣＥ電圧検出端子ＤＶ
ＣＥに発生するＶＣＥ電圧は、次の関係になる。The operation of the semiconductor device having such a configuration will be described. When a voltage equal to or higher than the threshold is applied to the gate electrode of the power chip 110, the IGBT is turned on and VC
The E voltage detection diode chip 120 is forward biased and turned on. VCE voltage detection terminal DV of drive circuit 210
The VCE voltage generated at CE has the following relationship.
【００１９】[0019]
【数１】 ＶＣＥ＝Ｖｃｅ＋Ｖｆ Ｖｃｅ：ＩＧＢＴのコレクタ−エミッタ間電圧 Ｖｆ：ＶＣＥ検出ダイオードの順電圧 ……（１） ここで、ＶｃｅはＩＧＢＴのコレクタ電流Ｉｃに依存
し、過電流に相当するＩｃが流れた時のＶｃｅは前もっ
てわかっているとする。Ｖｆを一定値として、過電流が
流れた時のＶＣＥ電圧を式（１）から導くことができ
る。算出された過電流が流れた時のＶＣＥ電圧を駆動回
路２１０の過電流検出回路の比較電圧Ｖｒｅｆとして設
定しておく。駆動回路２１０の過電流検出回路は、ＶＣ
Ｅ電圧検出端子ＤＶＣＥに発生するＶＣＥ電圧とＶｒｅ
ｆを比較することで過電流を検出することができる。過
電流を検出した場合には、ドライブ出力端子ＤＯＵＴか
らパワーチップ１１０のゲート電極への出力電圧を下げ
るか、または出力電圧をゼロに下げることによってパワ
ーチップ１１０をオフする。Vce = Vce + Vf Vce: Collector-emitter voltage of IGBT Vf: Forward voltage of VCE detection diode (1) Here, Vce depends on collector current Ic of IGBT, and Ic corresponding to overcurrent is It is assumed that Vce at the time of flowing is known in advance. With Vf being a constant value, the VCE voltage when an overcurrent flows can be derived from equation (1). The VCE voltage at the time when the calculated overcurrent flows is set as the comparison voltage Vref of the overcurrent detection circuit of the drive circuit 210. The overcurrent detection circuit of the drive circuit 210
VCE voltage generated at the E voltage detection terminal DVCE and Vre
By comparing f, an overcurrent can be detected. When an overcurrent is detected, the power chip 110 is turned off by lowering the output voltage from the drive output terminal DOUT to the gate electrode of the power chip 110 or by reducing the output voltage to zero.
【００２０】次に、上記説明の半導体装置の構造につい
て説明する。図２は、本発明の一実施の形態である半導
体装置の構造図である。図１と同じものには同じ番号を
付し、説明は省略する。Next, the structure of the above-described semiconductor device will be described. FIG. 2 is a structural diagram of a semiconductor device according to an embodiment of the present invention. The same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
【００２１】半導体装置は、駆動回路が組み込まれた駆
動ＩＣ（ベアチップ）２１１が搭載された駆動回路部２
００と、パワーチップ１１０及びＶＣＥ電圧検出用ダイ
オードチップ１２０が搭載されたパワー回路部１００と
から構成される。The semiconductor device has a drive circuit section 2 on which a drive IC (bare chip) 211 in which a drive circuit is incorporated is mounted.
00 and a power circuit section 100 on which a power chip 110 and a VCE voltage detection diode chip 120 are mounted.
【００２２】パワー回路部１００は、セラミック基板の
金属パターン１７０上にパワーチップ１１０及びＶＣＥ
電圧検出用ダイオードチップ１２０が搭載されている。
セラミック基板の裏面には、金属パターン１７０と同材
料の金属板が設けられており、この金属板がケース（図
示せず）底面より露出するようになっている。The power circuit section 100 includes a power chip 110 and a VCE on a metal pattern 170 of a ceramic substrate.
The diode chip 120 for voltage detection is mounted.
A metal plate of the same material as the metal pattern 170 is provided on the back surface of the ceramic substrate, and this metal plate is exposed from the bottom of a case (not shown).
【００２３】駆動回路部２００は、プリント基板上に駆
動ＩＣが搭載され、パワーチップ１１０及びＶＣＥ電圧
検出用ダイオードチップ１２０の電極と接続する駆動回
路２００の電極がプリント基板表面に設けられた金属端
子により、取り出されている。例えば、ＶＣＥ電圧検出
用ダイオードチップ１２０と接続するＶＣＥ電圧検出端
子ＤＶＣＥ、パワーチップ１１０と接続するドライブ出
力端子ＤＯＵＴ等である。The drive circuit section 200 is a metal terminal having a drive IC mounted on a printed circuit board and having electrodes of the drive circuit 200 connected to electrodes of the power chip 110 and the VCE voltage detecting diode chip 120 provided on the surface of the printed circuit board. Has been taken out. For example, a VCE voltage detection terminal DVCE connected to the VCE voltage detection diode chip 120, a drive output terminal DOUT connected to the power chip 110, and the like.
【００２４】パワー回路部１００のセラミック基板の金
属パターン１７０上に設けられたパワーチップ１１０及
びＶＣＥ電圧検出用ダイオードチップ１２０の端子と、
駆動回路部２００のプリント基板上に設けられた駆動回
路ＩＣ２１１の金属端子とは、ワイヤ１８０により接続
する。Terminals of the power chip 110 and the VCE voltage detecting diode chip 120 provided on the metal pattern 170 of the ceramic substrate of the power circuit section 100;
The metal terminal of the drive circuit IC 211 provided on the printed circuit board of the drive circuit unit 200 is connected by a wire 180.
【００２５】このように、パワーチップ１１０とＶＣＥ
電圧検出用ダイオードチップ１２０を同一の金属パター
ン１７０に搭載し、パワーチップ１１０のコレクタ電極
とＶＣＥ電圧検出用ダイオードチップ１２０のカソード
電極とを同一導体面上で接続したことにより、パワーチ
ップ１１０のＩＧＢＴコレクタ電極と、ＶＣＥ電圧検出
用ダイオードチップ１２０のカソード電極が極めて短い
距離で接続される。このため、配線インダクタンスＬ１
の影響を小さくすることができ、電流変化率ｄｉ／ｄｔ
により電圧降下Ｌ１・ｄｉ／ｄｔを小さくすることがで
きる。従って、駆動回路に内蔵した過電流検出回路の検
出精度が増す。As described above, the power chip 110 and the VCE
The voltage detection diode chip 120 is mounted on the same metal pattern 170, and the collector electrode of the power chip 110 and the cathode electrode of the VCE voltage detection diode chip 120 are connected on the same conductor surface. The collector electrode and the cathode electrode of the VCE voltage detecting diode chip 120 are connected at an extremely short distance. Therefore, the wiring inductance L1
Can be reduced, and the current change rate di / dt can be reduced.
As a result, the voltage drop L1 · di / dt can be reduced. Therefore, the detection accuracy of the overcurrent detection circuit built in the drive circuit increases.
【００２６】また、過電流検出回路を内蔵した駆動回路
２００を装置内に組み込むことにより、ＶＣＥ検出用ダ
イオードチップ１２０のアノード電極と駆動回路２００
のＶＣＥ電圧検出端子とを短い距離で接続することがで
きる。このため、配線インダクタンスＬ２の影響を小さ
くでき、ＶＣＥ検出ダイオードの逆方向に流れる電流の
変化率ｄｉ／ｄｔによる電圧降下Ｌ２・ｄｉ／ｄｔを小
さくすることができる。従って、駆動回路に内蔵した過
電流検出回路の検出精度が増す効果が得られる。Further, by incorporating a drive circuit 200 having a built-in overcurrent detection circuit in the device, the anode electrode of the diode chip 120 for VCE detection and the drive circuit 200
VCE voltage detection terminal can be connected at a short distance. Therefore, the effect of the wiring inductance L2 can be reduced, and the voltage drop L2 · di / dt due to the rate of change di / dt of the current flowing in the reverse direction of the VCE detection diode can be reduced. Therefore, the effect of increasing the detection accuracy of the overcurrent detection circuit built in the drive circuit can be obtained.
【００２７】次に、本発明の半導体装置における第２の
実施例について説明する。図３は、本発明の第２の実施
例である半導体装置の回路接続図である。図１と同じも
のには同じ番号を付し、説明は省略する。Next, a description will be given of a second embodiment of the semiconductor device according to the present invention. FIG. 3 is a circuit connection diagram of a semiconductor device according to a second embodiment of the present invention. The same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
【００２８】本発明の第２の実施例である半導体装置
は、パワーチップ１１０、パワーチップ１１０のＶＣＥ
電圧を検出するＶＣＥ電圧検出用ダイオードチップ１２
１、及び過電流検出回路を備えた駆動回路２１０とが、
同一の容器に内蔵されている。A semiconductor device according to a second embodiment of the present invention includes a power chip 110, a power supply
VCE voltage detecting diode chip 12 for detecting voltage
1 and a drive circuit 210 including an overcurrent detection circuit,
Built in the same container.
【００２９】本発明の第２の実施例である半導体装置
は、上記説明の第１の実施例のＶＣＥ電圧検出用ダイオ
ードチップ１２０の代わりに、同じ目的のダイオードを
ＦＷＤチップに作り込んだＶＣＥ電圧検出用ダイオード
チップ１２１を用いた構成である。The semiconductor device according to the second embodiment of the present invention is different from the first embodiment in that the VCE voltage detecting diode chip 120 of the first embodiment is replaced with a VCE voltage having a diode for the same purpose built in the FWD chip. This is a configuration using a detection diode chip 121.
【００３０】ＶＣＥ電圧検出用ダイオードチップ１２１
は、ＶＣＥ電圧検出用ダイオード１２１ａと、還流用ダ
イオード１２１ｂとから構成される。ＶＣＥ電圧検出用
ダイオード１２１ａのカソード電極と、還流用ダイオー
ド１２１ｂのカソード電極とは、コモン電極としてパワ
ーチップ１１０のコレクタ電極が固着された導体と同一
の導体に固着される。また、ＶＣＥ電圧検出用ダイオー
ド１２１ａのアノード電極は、ＶＣＥ電圧検出用ダイオ
ードチップ１２１から引き出し、装置内部に設けられた
駆動回路２１０のＶＣＥ電圧検出端子ＤＶＣＥに接続す
る。還流用ダイオード１２１ｂのアノード電極は、パワ
ーチップ１１０のエミッタ電極に接続する。VCE voltage detecting diode chip 121
Is composed of a VCE voltage detecting diode 121a and a reflux diode 121b. The cathode electrode of the VCE voltage detection diode 121a and the cathode electrode of the reflux diode 121b are fixed to the same conductor as the common electrode to which the collector electrode of the power chip 110 is fixed. The anode electrode of the VCE voltage detection diode 121a is drawn from the VCE voltage detection diode chip 121 and connected to the VCE voltage detection terminal DVCE of the drive circuit 210 provided inside the device. The anode electrode of the reflux diode 121b is connected to the emitter electrode of the power chip 110.
【００３１】このように、ＶＣＥ電圧検出用ダイオード
チップ１２１には、ＶＣＥ電圧検出用ダイオード１２１
ａ領域と、還流用ダイオード１２１ｂ領域とが設けられ
ている。これらの領域は、一導体型の半導体基板に拡散
等の方法により分散して他導電型の領域を設け、個々に
金属電極を設けることで容易に実現できる。As described above, the VCE voltage detecting diode 121 is mounted on the VCE voltage detecting diode chip 121.
A region and a reflux diode 121b region are provided. These regions can be easily realized by dispersing the semiconductor substrate of one conductor type by a method such as diffusion to provide regions of another conductivity type, and providing individual metal electrodes.
【００３２】その他の構成は、上記説明の第１の実施例
の半導体装置と同じである。また、その動作は上記説明
の第１の実施例の半導体装置と同様であるので、説明を
省略する。The other structure is the same as that of the semiconductor device of the first embodiment described above. Further, the operation is the same as that of the semiconductor device of the first embodiment described above, and the description is omitted.
【００３３】次に、上記説明の半導体装置の構造につい
て説明する。図４は、本発明の第２の実施例である半導
体装置の構造図である。図２、図３と同じものには同じ
番号を付し、説明は省略する。Next, the structure of the above-described semiconductor device will be described. FIG. 4 is a structural diagram of a semiconductor device according to a second embodiment of the present invention. 2 and 3 are denoted by the same reference numerals, and description thereof is omitted.
【００３４】第２の半導体装置は、駆動回路が組み込ま
れた駆動ＩＣ２１１が搭載された駆動回路部２００と、
パワーチップ１１０及びＶＣＥ電圧検出用ダイオードチ
ップ１２１が搭載されたパワー回路部１００とから構成
される。The second semiconductor device comprises a drive circuit section 200 on which a drive IC 211 incorporating a drive circuit is mounted;
The power circuit unit 100 includes a power chip 110 and a VCE voltage detecting diode chip 121.
【００３５】パワー回路部１００は、セラミック基板の
金属パターン１７０上にパワーチップ１１０及びＶＣＥ
電圧検出用ダイオードチップ１２１が搭載されている。
その他の構造は、第１の実施例と同様である。The power circuit section 100 includes a power chip 110 and a VCE on a metal pattern 170 of a ceramic substrate.
The voltage detection diode chip 121 is mounted.
Other structures are the same as those of the first embodiment.
【００３６】このように、パワーチップ１１０とＶＣＥ
電圧検出用ダイオードチップ１２１を同一の金属パター
ン１７０に搭載し、パワーチップ１１０のコレクタ電極
とＶＣＥ電圧検出用ダイオードチップ１２０のＶＣＥ電
圧検出用ダイオード１２１ａのカソード電極とを同一導
体面上で接続したことにより、パワーチップ１１０のＩ
ＧＢＴコレクタ電極と、ＶＣＥ電圧検出用ダイオード１
２１ａのカソード電極が極めて短い距離で接続される。
このため、配線インダクタンスＬ１の影響を小さくする
ことができ、駆動回路に内蔵した過電流検出回路の検出
精度が増す。As described above, the power chip 110 and the VCE
The voltage detection diode chip 121 is mounted on the same metal pattern 170, and the collector electrode of the power chip 110 and the cathode electrode of the VCE voltage detection diode 121a of the VCE voltage detection diode chip 120 are connected on the same conductor surface. As a result, I of the power chip 110
GBT collector electrode and VCE voltage detection diode 1
The cathode electrode 21a is connected at a very short distance.
For this reason, the influence of the wiring inductance L1 can be reduced, and the detection accuracy of the overcurrent detection circuit built in the drive circuit increases.
【００３７】また、駆動回路を同一装置内に組み込んだ
ことにより得られる効果は、第１の実施例と同様であ
る。次に、本発明の半導体装置における第３の実施例に
ついて説明する。図５は、本発明の第３の実施例である
半導体装置の回路接続図である。図１と同じものには同
じ番号を付し、説明は省略する。The effect obtained by incorporating the drive circuit in the same device is the same as that of the first embodiment. Next, a third embodiment of the semiconductor device of the present invention will be described. FIG. 5 is a circuit connection diagram of a semiconductor device according to a third embodiment of the present invention. The same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
【００３８】本発明の第３の実施例である半導体装置
は、ＶＣＥ電圧検出用ダイオードが組み込まれたダイオ
ード内蔵パワーチップ１３０と、過電流検出回路を備え
た駆動回路２１０とが、同一の容器に内蔵されている。In the semiconductor device according to the third embodiment of the present invention, a power chip 130 with a built-in diode incorporating a VCE voltage detection diode and a drive circuit 210 having an overcurrent detection circuit are provided in the same container. Built-in.
【００３９】本発明の第３の実施例である半導体装置
は、上記説明の第１の実施例のＶＣＥ電圧検出用ダイオ
ードチップ１２０の代わりに、同じ目的のダイオードを
パワーチップ１１０に作り込んだ構成である。パワーチ
ップにダイオードを内蔵するには、半導体基板内に拡散
等により形成するか、あるいは、半導体基板上に絶縁層
を介して形成すればよい。The semiconductor device according to the third embodiment of the present invention has a structure in which a diode for the same purpose is formed in the power chip 110 instead of the VCE voltage detecting diode chip 120 of the first embodiment described above. It is. In order to incorporate a diode in the power chip, it may be formed in a semiconductor substrate by diffusion or the like, or may be formed on a semiconductor substrate via an insulating layer.
【００４０】ダイオード内蔵パワーチップ１３０は、Ｖ
ＣＥ電圧検出用ダイオードを内蔵しており、ＶＣＥ電圧
検出用ダイオードのカソード電極とＩＧＢＴコレクタ電
極とは、コモン電極として基板上の導体に固着する。ま
た、ＶＣＥ電圧検出用ダイオードのアノード電極は、ダ
イオード内蔵パワーチップ１３０より引き出し、装置内
部に設けられた駆動回路２１０のＶＣＥ電圧検出端子Ｄ
ＶＣＥと接続する。The power chip 130 with a built-in diode
A CE voltage detection diode is built in, and the cathode electrode and the IGBT collector electrode of the VCE voltage detection diode are fixed to a conductor on a substrate as a common electrode. Further, the anode electrode of the VCE voltage detecting diode is drawn out from the power chip 130 with a built-in diode, and the VCE voltage detecting terminal D of the driving circuit 210 provided inside the device.
Connect to VCE.
【００４１】その他の構成は、上記説明の第１の実施例
の半導体装置と同じである。また、その動作は上記説明
の第１の実施例の半導体装置と同様であるので、説明を
省略する。The other structure is the same as that of the semiconductor device of the first embodiment described above. Further, the operation is the same as that of the semiconductor device of the first embodiment described above, and the description is omitted.
【００４２】次に、上記説明の半導体装置の構造につい
て説明する。図６は、本発明の第３の実施例である半導
体装置の構造図である。図２、図５と同じものには同じ
番号を付し、説明は省略する。Next, the structure of the above-described semiconductor device will be described. FIG. 6 is a structural diagram of a semiconductor device according to a third embodiment of the present invention. 2 and 5 are denoted by the same reference numerals, and description thereof is omitted.
【００４３】半導体装置は、駆動回路が組み込まれた駆
動ＩＣ２１１が搭載された駆動回路部２００と、ＶＣＥ
電圧検出用ダイオードを内蔵するダイオード内蔵パワー
チップ１３０が搭載されたパワー回路部１００とから構
成される。The semiconductor device includes a driving circuit unit 200 on which a driving IC 211 incorporating a driving circuit is mounted, and a VCE
And a power circuit section 100 on which a diode built-in power chip 130 having a built-in voltage detecting diode is mounted.
【００４４】パワー回路部１００は、セラミック基板の
金属パターン１７０上にダイオード内蔵パワーチップ１
３０が搭載されている。その他の構造は、第１の実施例
と同様である。The power circuit section 100 includes a power chip 1 with a built-in diode on a metal pattern 170 on a ceramic substrate.
30 are mounted. Other structures are the same as those of the first embodiment.
【００４５】このように、ダイオード内蔵パワーチップ
１３０にＶＣＥ電圧検出用ダイオードチップを作り込
み、ＩＧＢＴコレクタ電極とＶＣＥ電圧検出用ダイオー
ドのカソード電極とを基板上の同一導体で接続したこと
により、ＩＧＢＴコレクタ電極と、ＶＣＥ電圧検出用ダ
イオードのカソード電極が極めて短い距離で接続され
る。このため、配線インダクタンスＬ１の影響を小さく
することができ、駆動回路に内蔵した過電流検出回路の
検出精度が増す。As described above, the VCE voltage detecting diode chip is formed in the diode built-in power chip 130, and the IGBT collector electrode and the cathode electrode of the VCE voltage detecting diode are connected by the same conductor on the substrate. The electrode and the cathode electrode of the VCE voltage detecting diode are connected at a very short distance. For this reason, the influence of the wiring inductance L1 can be reduced, and the detection accuracy of the overcurrent detection circuit built in the drive circuit increases.
【００４６】また、駆動回路を同一装置内に組み込んだ
ことにより得られる効果は、第１の実施例と同様であ
る。The effect obtained by incorporating the drive circuit in the same device is the same as that of the first embodiment.
【００４７】[0047]
【発明の効果】以上説明したように本発明では、パワー
チップと、パワーチップの入力側主電極の電圧を検出す
る検出回路と、検出した電圧を監視してパワーチップが
過電流状態であることを検出し、パワーチップへの駆動
信号を制御する駆動回路と、を同一の容器内に内蔵して
いる。また、検出回路の入力電極は、パワーチップの入
力側主電極と同一基板上の同一導体に固着し、電圧出力
電極は、駆動回路の電圧検出電極と接続する。As described above, according to the present invention, the power chip, the detection circuit for detecting the voltage of the input-side main electrode of the power chip, and the detection of the detected voltage are such that the power chip is in an overcurrent state. And a drive circuit for detecting a drive signal to the power chip are built in the same container. The input electrode of the detection circuit is fixed to the same conductor on the same substrate as the input main electrode of the power chip, and the voltage output electrode is connected to the voltage detection electrode of the drive circuit.
【００４８】これにより、パワーチップの入力側主電極
と、検出回路の入力電極は、同一導体上という極めて短
い距離で接続されることになる。検出回路は、パワーチ
ップの入力側主電極の電圧を直近で測定することが可能
となり、配線インダクタンスの影響を小さくすることが
できる。この結果、駆動回路に内蔵した過電流検出回路
の検出精度が増すという効果が得られる。As a result, the input-side main electrode of the power chip and the input electrode of the detection circuit are connected at a very short distance on the same conductor. The detection circuit can measure the voltage of the input-side main electrode of the power chip immediately, and can reduce the influence of the wiring inductance. As a result, the effect of increasing the detection accuracy of the overcurrent detection circuit built in the drive circuit can be obtained.
【００４９】また、過電流検出回路を内蔵した駆動回路
を組み込むことによって、検出回路の電圧出力電極と駆
動回路の電圧検出電極とを極めて短い距離で接続するこ
とができる。この結果、駆動回路に内蔵した過電流検出
回路の検出精度がさらに増すという効果が得られる。Further, by incorporating a drive circuit having a built-in overcurrent detection circuit, the voltage output electrode of the detection circuit and the voltage detection electrode of the drive circuit can be connected at a very short distance. As a result, an effect is obtained that the detection accuracy of the overcurrent detection circuit built in the drive circuit is further increased.
【図１】本発明の一実施の形態である半導体装置の回路
接続図である。FIG. 1 is a circuit connection diagram of a semiconductor device according to an embodiment of the present invention.
【図２】本発明の一実施の形態である半導体装置の構造
図である。FIG. 2 is a structural diagram of a semiconductor device according to an embodiment of the present invention;
【図３】本発明の第２の実施例である半導体装置の回路
接続図である。FIG. 3 is a circuit connection diagram of a semiconductor device according to a second embodiment of the present invention.
【図４】本発明の第２の実施例である半導体装置の構造
図である。FIG. 4 is a structural diagram of a semiconductor device according to a second embodiment of the present invention.
【図５】本発明の第３の実施例である半導体装置の回路
接続図である。FIG. 5 is a circuit connection diagram of a semiconductor device according to a third embodiment of the present invention.
【図６】本発明の第３の実施例である半導体装置の構造
図である。FIG. 6 is a structural diagram of a semiconductor device according to a third embodiment of the present invention.
【図７】従来の過電流検出機能を有するＩＧＢＴ及び駆
動回路の回路接続図である。FIG. 7 is a circuit connection diagram of a conventional IGBT having an overcurrent detection function and a drive circuit.
１１０ パワーチップ １２０ ＶＣＥ電圧検出用ダイオードチップ ２１０ 駆動回路 ＩＧＢＴ 絶縁ゲート型バイポーラトランジスタ ＤＶＣＥ ＶＣＥ電圧検出端子 ＤＯＵＴ ドライブ出力端子 Ｃ コレクタ端子 Ｅ エミッタ端子 110 Power Chip 120 VCE Voltage Detection Diode Chip 210 Drive Circuit IGBT Insulated Gate Bipolar Transistor DVCE VCE Voltage Detection Terminal DOUT Drive Output Terminal C Collector Terminal E Emitter Terminal
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/62 Ｈ０３Ｋ 17/08 Ｂ Ｈ０３Ｋ 17/08 Ｈ０１Ｌ 21/60 ３０１Ａ 17/60 23/56 Ａ // Ｈ０１Ｌ 21/60 ３０１ Ｈ０３Ｋ 17/60 Ａ (72)発明者 百田 聖自 神奈川県川崎市川崎区田辺新田１番１号 富士電機株式会社内 Ｆターム(参考） 5F044 AA12 FF05 5J055 AX42 AX47 BX16 CX19 CX20 DX09 EX06 EX12 EY12 EZ61 FX05 FX12 FX20 FX33 GX02 GX08 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/62 H03K 17/08 B H03K 17/08 H01L 21/60 301A 17/60 23/56 A // H01L 21/60 301 H03K 17/60 A (72) Inventor Seiji Momota 1-1, Tanabe-shinda, Kawasaki-ku, Kawasaki-shi, Kanagawa F-term in Fuji Electric Co., Ltd. F-term (reference) 5F044 AA12 FF05 5J055 AX42 AX47 BX16 CX19 CX20 DX09 EX06 EX12 EY12 EZ61 FX05 FX12 FX20 FX33 GX02 GX08
Claims (4)
半導体装置において、 電力変換回路のスイッチング素子として用いられるパワ
ーチップと、 前記パワーチップが駆動時に前記パワーチップの入力側
主電極の電圧を検出する検出回路と、 前記検出回路の検出した電圧を監視し、前記電圧が所定
の値を超えたことにより前記パワーチップが過電流状態
であることを検出する過電流検出回路を有し、検出結果
に応じて前記パワーチップへの駆動信号を制御する駆動
回路と、 を同一容器に内蔵するとともに、前記パワーチップの入
力側主電極が固着された導体と同一の導体に前記検出回
路の入力電極を固着し、前記検出回路の電圧出力電極と
前記駆動回路の電圧検出電極とを接続したことを特徴と
する半導体装置。1. A semiconductor device comprising a power chip and a drive circuit therefor, comprising: a power chip used as a switching element of a power conversion circuit; and detecting a voltage of an input-side main electrode of the power chip when the power chip is driven. A detection circuit that monitors a voltage detected by the detection circuit and detects that the power chip is in an overcurrent state when the voltage exceeds a predetermined value. And a drive circuit for controlling a drive signal to the power chip in accordance with the following formula: embedded in the same container, and the input electrode of the detection circuit on the same conductor as the conductor to which the input main electrode of the power chip is fixed. And a voltage output electrode of the detection circuit and a voltage detection electrode of the drive circuit are connected.
り、前記パワーチップの入力側主電極が固着された導体
と同一の導体に前記ダイオードチップのカソード電極を
固着し、前記駆動回路の電圧検出電極と前記ダイオード
チップのアノード電極を接続することを特徴とする請求
項１記載の半導体装置。2. The voltage detection electrode of the drive circuit, wherein the detection circuit is a diode chip, and the cathode electrode of the diode chip is fixed to the same conductor as the conductor to which the input main electrode of the power chip is fixed. 2. The semiconductor device according to claim 1, wherein the semiconductor device is connected to an anode electrode of the diode chip.
並列に接続される還流用ダイオードチップの一部に設け
られ、前記パワーチップの入力側主電極の電圧を検出す
る電圧検出用ダイオードであり、前記電圧検出用ダイオ
ードのカソード電極と前記還流用ダイオードのカソード
電極とをコモン電極として前記パワーチップの入力側主
電極が固着された導体と同一の導体に固着し、前記電圧
検出用ダイオードのアノード電極を前記駆動回路の電圧
検出電極と接続することを特徴とする請求項１記載の半
導体装置。3. The voltage detection diode is provided on a part of a return diode chip connected in anti-parallel to the power chip and detects a voltage of an input-side main electrode of the power chip. The cathode of the voltage detection diode and the cathode of the reflux diode are fixed to the same conductor as the conductor to which the input-side main electrode of the power chip is fixed, and the anode of the voltage detection diode is 2. The semiconductor device according to claim 1, wherein an electrode is connected to a voltage detection electrode of the driving circuit.
一部に設けられた前記パワーチップの入力側主電極の電
圧を検出する電圧検出用ダイオードであり、前記電圧検
出用ダイオードのカソード電極と前記パワーチップの入
力側主電極とをコモン電極として基板上の導体に固着
し、前記電圧検出用ダイオードのアノード電極を前記駆
動回路の電圧検出電極と接続することを特徴とする請求
項１記載の半導体装置。4. The detection circuit is a voltage detection diode for detecting a voltage of an input-side main electrode of the power chip provided in a part of the power chip, and a cathode electrode of the voltage detection diode and the voltage detection diode. 2. The semiconductor according to claim 1, wherein an input side main electrode of the power chip is fixed to a conductor on a substrate as a common electrode, and an anode electrode of the voltage detection diode is connected to a voltage detection electrode of the drive circuit. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000296126A JP2002110986A (en) | 2000-09-28 | 2000-09-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000296126A JP2002110986A (en) | 2000-09-28 | 2000-09-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002110986A true JP2002110986A (en) | 2002-04-12 |
Family
ID=18778448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000296126A Pending JP2002110986A (en) | 2000-09-28 | 2000-09-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002110986A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1503490A1 (en) * | 2003-08-01 | 2005-02-02 | Infineon Technologies AG | Current sensing circuit |
| JP2013214597A (en) * | 2012-04-02 | 2013-10-17 | Sumitomo Electric Ind Ltd | Semiconductor device |
| JP2015126084A (en) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | Semiconductor device |
| US10396071B2 (en) | 2017-04-06 | 2019-08-27 | Fuji Electric Co., Ltd. | Semiconductor device having a sense diode portion |
| US11855077B2 (en) | 2018-02-28 | 2023-12-26 | Fuji Electric Co., Ltd. | Semiconductor device |
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| JPH03183209A (en) * | 1988-11-16 | 1991-08-09 | Fuji Electric Co Ltd | Drive circuit for voltage driven type semiconductor element |
| JPH07221265A (en) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Power semiconductor module |
| JPH08340103A (en) * | 1995-04-11 | 1996-12-24 | Toshiba Corp | Power semiconductor device |
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|---|---|---|---|---|
| JPS62209834A (en) * | 1986-03-11 | 1987-09-16 | Toshiba Corp | Semiconductor device and manufacture of the same, and substrate for mounting semiconductor element |
| JPH03183209A (en) * | 1988-11-16 | 1991-08-09 | Fuji Electric Co Ltd | Drive circuit for voltage driven type semiconductor element |
| JPH07221265A (en) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Power semiconductor module |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1503490A1 (en) * | 2003-08-01 | 2005-02-02 | Infineon Technologies AG | Current sensing circuit |
| JP2013214597A (en) * | 2012-04-02 | 2013-10-17 | Sumitomo Electric Ind Ltd | Semiconductor device |
| JP2015126084A (en) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | Semiconductor device |
| US10396071B2 (en) | 2017-04-06 | 2019-08-27 | Fuji Electric Co., Ltd. | Semiconductor device having a sense diode portion |
| US11855077B2 (en) | 2018-02-28 | 2023-12-26 | Fuji Electric Co., Ltd. | Semiconductor device |
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