JP2002075638A - Vapor deposition method of mask and vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition method which does not give damage to an organic film when the vapor deposition is performed by making a metal mask stuck on the organic film. SOLUTION: When the metal mask 32 is stuck and retained by a magnetic force on a vapor-deposited substrate 33 formed on the organic film and the vapor deposition is performed on the organic film, a magnet 36 which is larger than a pattern region of the metal mask on the other face against an abutted face of the metal mask of the vapor-deposited substrate is installed, and the metal mask 32 is retained by an attractive force of 0.98 to 98 kPa against the vapor-deposited substrate 33 by the magnet 36, and it is preferable that a magnetically permeable intermediate substrate 35 is inserted between the vapor-deposited substrate 33 and the magnet 36.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask vapor deposition method and apparatus for depositing a vapor on a substrate while holding a metal mask in close contact with the substrate.

[0002]

2. Description of the Related Art In an organic electroluminescent device (organic EL device) used for a display device, a flat panel display, or the like, an organic fluorescent material in which electrons injected from a cathode and holes injected from an anode are sandwiched between both electrodes. The light is obtained by recombination in the dye and exciting the dye. for that reason,
Compared with liquid crystal display (LCD), wide viewing angle, high contrast at high brightness can be easily realized, and
Because the self-emission of the dye is used, a backlight is not required and the panel can be made extremely thin, 2 mm or less. Therefore, the panel can be made lighter and thinner, and the response time is much faster than that of liquid crystal. It has attracted attention because of its excellent properties such as being suitable for use.

[0003] The colorization of such an organic EL device is also being studied, and a parallel type independent system in which RGB three-color pixels are formed by light-emitting layers containing different dyes, respectively, is produced by one type of blue light-emitting layer. There are known a color conversion method in which the converted light is converted into three colors of RGB by a fluorescent color conversion film, a color filter method in which light from a white light emitting layer is converted into three colors of RGB through a color filter, and the like.

In the color conversion system and the color filter system, the light-emitting layer has only one color and does not require patterning. The color conversion film or color filter requiring patterning can be realized by ordinary lithography. There is a problem that luminous efficiency is reduced by passing through a color filter.

[0005] On the other hand, the parallel independent type has a feature that the color conversion film and the color filter are not required, and thus the luminous efficiency is excellent, which is more advantageous than other types. However, it is necessary to separately apply fine light emitting layers, and it is necessary to use high-performance materials for the light emitting layers of the three colors. In particular, since the organic dye used in the light emitting layer has poor resistance to moisture and organic solvents, it is difficult to perform patterning by a wet process represented by a photolithographic method.
Also, regarding the electrodes formed on the organic light emitting layer, the pattern processing by the wet process may damage the organic dye, and therefore, both are performed by a dry process such as vapor deposition, and the patterning is performed by using a mask. It was realized using.

[0006]

However, in the case of forming a fine pattern, unless the mask is thinned, the thickness of the deposited material in the peripheral portion of the mask opening becomes thin, and the deposited film has a uniform thickness. Can not be obtained. In addition, in order to perform vapor deposition with high accuracy, it is necessary to perform vapor deposition with the mask in close contact with the substrate, but as the mask becomes thinner, the mask becomes more flexible, and a gap is formed between the mask and the substrate.
In particular, the gap becomes larger at the center of the mask, and the vapor deposition pattern is more likely to bleed. In addition, the mask expands due to temperature rise during vapor deposition, and the mechanical rigidity is insufficient due to thinning, so the line position of the mask shifts due to slight vibration and stress, and especially multi-color luminescent pixels are deposited. In such a case, it is difficult to align the metal mask and the pixel, and there has been a problem in securing accuracy.

In Japanese Patent Application Laid-Open No. 2000-68053, the ratio of the width between the slit portion of the mask and the interval between the slits is set to 1: 0.
5 or more, preferably 1 to 2, and furthermore, a metal mask as a vapor deposition mask is made of a material having a negative coefficient of thermal expansion, or is pulled from the periphery by a spring to perform vapor deposition while securing flatness, or a metal mask. By providing an outer frame and positively applying stress to the outer frame using a material having a larger coefficient of thermal expansion than the mask, mechanical tension is applied to the mask as a result of applying heat to the mask assuming that it has received heat radiation during vapor deposition. In particular, a method has been proposed in which the resonance frequency is increased to prevent mask deformation due to thermal stress and misalignment due to vibration.

On the other hand, the substrate on which the film is to be deposited also tends to be thinned. As a result, the strength is reduced, thermal expansion is caused by heat radiation during the deposition, and stress is generated due to a difference in expansion coefficient. In some cases, warping or undulation may occur, which also creates a gap between the mask and the substrate, causing blurring of the vapor deposition pattern. For example, as shown in FIG. 4A, when a glass substrate 42 is disposed on a metal mask 41 and vapor deposition is performed, stress is applied with the deposition of the vapor deposition film 43, and the outer periphery of the substrate warps upward. When a gap is generated and the vapor deposition is continued, the vapor deposition pattern is blurred toward the periphery of the substrate.

To solve such a problem, FIG.
As shown in (b), a method has been proposed in which the metal mask 41 is attracted by the magnetic force of the magnet 44 to eliminate the deflection of the mask. However, as shown in FIG. 4C, when the magnet 44 is placed on the substrate in advance and the substrate is held by the holder 45 and transferred to the mask with the thinning of the substrate, the magnet is attracted to the mask. The substrate is deflected by the applied force or the mask is lifted, making it difficult to place the substrate at a predetermined position on the mask.

On the other hand, a metal mask for vapor deposition has a large difference between the slit width and the strip width. When attracted and held by a magnet as shown in FIG. 5, the slit 52 of the metal mask 51 is deformed and displaced. , And cannot form a parallel pattern.

The reason is that in order to attract a metal mask by magnetic force, Fe, Co, N
It is necessary to contain a ferromagnetic metal such as i, but such a ferromagnetic metal is easily magnetized, and when the end face on the mask side is held by a magnet of the same magnetic pole, the thin line between the slits of the adjacent masks has the same direction. It is magnetized to be polarized. As a result, a repulsive force is generated between the fine lines and they repel each other, so that the parallelism of the pattern is lost.

On the other hand, Japanese Patent Publication No. 6-51905 discloses that a magnet is arranged such that a boundary between an N pole and an S pole is present on the end face of the metal mask on the metal mask side, so that an adjacent thin line between the metal masks is provided. Attempts have been made to maintain the parallelism of the mask pattern by balancing the repulsion and the attraction to maintain the balance. In this method, 318320 A / m (4
000 Oersted) or more and Curie point of 450 ° C
The above strong magnet is considered to be preferable, and the magnet is combined with a ferromagnetic mask.

Also, Japanese Patent Application Laid-Open No. 10-41069 discloses that when depositing an organic film of an organic EL element, a metal mask with tension is used and the mask is attracted to a substrate with a magnet. In addition, it is described that when the mask is fixed by a magnetic force, it is sufficient that the mask has a magnetic force that can sufficiently secure the adhesion and the positional fixation of the mask.

However, when three primary color patterns such as an organic light emitting layer are sequentially formed, if they are attracted by a strong magnet, these organic vapor-deposited films are not so strong. The present inventors have found out that a problem such as poor coloring has occurred in the above. A similar phenomenon was observed when a cathode was deposited on the organic light emitting layer.
Conventionally, attention has been paid only to the adhesion between the mask and the substrate and the deformation of the vapor deposition pattern, and there is no mention of introducing such damage to the organic film.

Accordingly, it is an object of the present invention to provide a vapor deposition method which does not damage an organic film when vapor deposition is performed by bringing a metal mask into close contact with the organic film.
Another object of the present invention is to provide a mask vapor deposition method and a vapor deposition apparatus capable of performing uniform vapor deposition even using a substrate which tends to be thin.

[0016]

Means for Solving the Problems The present inventors have made intensive studies in view of the above problems, and as a result, by setting the adsorbing force of a metal mask to a substrate by a magnet to a specific value or less, it is possible to apply an organic film to an organic film. Damage can be suppressed, and furthermore, by holding the mask with the limited suction force, the metal mask is thinned, and even when a slit-shaped long opening is formed as a vapor deposition pattern, pattern deformation is prevented. It has been found that this hardly occurs, and the present invention has been completed.
Further, it provides an effective means against the problem of warpage of a substrate to be thinned.

That is, according to the present invention, there is provided a mask vapor deposition method in which a metal mask is adhered to a substrate on which an organic film is formed by magnetic force and vapor deposition is performed on the organic film. A magnet larger than the pattern area of the metal mask is installed on the opposite side of the metal mask, and the metal mask is applied to the substrate to be deposited at 0.98 to 98 k by the magnet.
The present invention relates to a mask vapor deposition method characterized in that the mask is held with a suction force of Pa.

Further, according to the present invention, in a state where a magnet is arranged on a surface opposite to a deposition surface of a substrate to be deposited, the substrate is aligned with a metal mask for deposition, and the metal mask is attached to the deposition surface of the substrate by magnetic force. The present invention relates to an apparatus for attaching and detaching a mask, wherein a magnetically permeable intermediate substrate is arranged between a substrate to be evaporated and a magnet.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION As in the case of an organic EL device, when depositing a metal mask on an organic film by magnetic force as in an organic EL device, the organic mask depends on the attraction force of the metal mask to the substrate by the magnet. It has been discovered that damage (eg, pinholes due to scratches or dents in the film) is introduced into the film.

As described above, in the organic EL element, when the light emitting layer is formed, the light emitting layer is formed by a vapor deposition method using a metal mask, and a hole transport layer, a charge transport layer, and the like are provided between the light emitting layer and the electrode. In some cases, a film made of an organic material is formed. For example, FIG. 6 is a partial cross-sectional view in a case where a hole transport layer 65 is deposited on an ITO electrode 64 as an anode, and then a light emitting layer is deposited using a metal mask 63. As shown in FIG. 7, when the metal mask 63 is attracted and held by the magnet 62 provided on the rear surface of the substrate, the metal mask 63 is attracted to the substrate 61 by the magnet 62,
Depending on the attraction force to 1, the metal mask 63 pushes the hole transport layer 65, and in particular, the force may concentrate on the mask edge for forming the light emitting layer, or concentrate on a portion where stress is generated due to uneven magnetic force. In some cases, damage 66 such as a pinhole due to a flaw or dent of the film was introduced into the organic film in this portion (FIG. 6B shows a partially enlarged view of FIG. 6A).

When the light emitting layer is separately colored in three colors in order to achieve full color display, one light emitting layer is deposited as shown in FIG. 7, and then the next light emission is performed by shifting the metal mask 63 by one pixel. In this case, the light emitting layer 67 previously deposited undergoes plastic deformation depending on the adsorption force of the metal mask to the substrate, and compressive stress is applied.
Especially near the damage introduction part described above, that is,
Stress concentrates on the end of the light emitting layer 67, and peeling of the light emitting layer and further damage to the hole transport layer 65 are introduced.

In some cases, these organic films may come off or come off, exposing the underlying ITO electrode 64. If a cathode is formed with the ITO electrode being exposed, a gap between the anode (ITO) and the cathode may be formed. Causes a short circuit. In addition, a method of obliquely depositing by providing a resist wall (several μm in height) in the space of the cathode at the time of cathode separation is often used. In some cases, the cathode may be scratched or come off, and the cathode is not separated at that portion, causing a short circuit with the adjacent cathode.

However, according to the study of the present inventors, the attraction force of the metal mask on the substrate to be deposited by the magnet is 0.98 kPa to 98 kPa (10 to 1000 g / cm).
It has been found that by setting the range of ² ), introduction of damage to the organic film can be suppressed. At the same time,
By selecting an attraction force in this range, it has been found that it is possible to prevent the mask pattern from being deformed by magnetic force when the mask pattern has a long shape such as a slit.

[0024] The "adsorption force" defined in the present invention refers to a substrate,
This is the final force in consideration of the mask material across the intermediate substrate, and indicates the force by which the magnet can hold a plate having a uniform thickness and a certain weight. That is, in the present invention, it has been found that if the adsorption force is 98 kPa or less, damage to the organic film is effectively reduced. On the other hand, if the attraction force is too weak, there is a problem that the mask is displaced during vapor deposition.
When the pressure is 98 kPa or more, the mask can be sufficiently held by suction.

At this time, as the magnet to be used, a magnet larger than the pattern area of the metal mask is provided and used. The reason is that when a magnet equal to or smaller than the pattern area is used, not only the stress difference due to the uneven distribution of the magnetic force becomes remarkable as described above, but also when the mask pattern is a long shape such as a slit, the pattern distortion and the like are caused. Because it occurs.

As the metal mask in the present invention, any material can be used as long as it can be attracted by magnetic force, and stainless steel (SU) usually used in this field is used.
S alloy), Kovar (Fe-Ni-Co alloy), Invar (Fe-Ni alloy), and the like can be used, but are not limited thereto.

When holding the metal mask with tension, a method of fixing the metal mask to the frame by welding or the like may be used. The tension to be applied varies depending on the thickness of the plate, but the mask edge is uniformly set to about 29.4 N · c in the plane direction.
m (3 kg · cm). Further, the value can be changed depending on the pattern shape.

The magnet used in the present invention is not particularly limited as long as it can give the above-mentioned attraction force to the metal mask. However, in the case of holding a mask having a long slit shape, It is preferable that the magnet is an anisotropic double-pole monopolar magnetized magnetized on one surface N-pole and the other surface S-pole. Even if the magnet is not anisotropically magnetized on both sides, the mask pattern can be prevented from being distorted by applying an attractive force of 49 kPa (500 g / cm ² ) or less and applying tension. The magnet may be a permanent magnet or an electromagnet.

Further, according to the present invention, when the substrate is aligned with the metal mask in a state where the magnet is arranged on the surface opposite to the deposition surface of the substrate to be thinned, the weight of the magnet or the magnet is attracted to the mask. In order to solve the problem that the substrate is deflected by force and positioning is difficult, by arranging a highly permeable rigid intermediate substrate between the substrate and the magnet,
Deflection of the substrate can be prevented. By arranging such an intermediate substrate, the substrate is only bent by its own weight, and furthermore, by attaching or adhering the substrate to be deposited on the intermediate substrate, the deflection by its own weight can also be eliminated. Positioning can be performed accurately. Also, by disposing the intermediate substrate, there is an effect that the attraction force of the metal mask to the substrate can be adjusted. In addition, by attaching a film-like substrate having low rigidity, which has conventionally been difficult to manufacture, to the intermediate substrate, an organic EL element can be formed.

The intermediate substrate is not particularly limited as long as it is a magnetically permeable material and has a sufficient rigidity. In particular, the intermediate substrate has a thickness of 0.3 to 10 mm and a Young's modulus of 10 GP.
It is preferable that the material is at least a. 0.3mm thickness
Even if it is smaller, a material with high rigidity may be used,
The thinner the film is, the easier it is to break or deform, and requires careful handling. In addition, even if the plate thickness is larger than 10 mm, there is not much difference in the effect, and conversely, the distance between the metal mask and the magnet is increased by the plate thickness, so that an extra magnet with a high magnetic force is used or the weight increases. May increase the load on the holding device, and the above range is sufficient.

As an intermediate substrate satisfying such conditions,
A paramagnetic metal plate such as Al or a ceramic substrate such as glass can be used.

It is preferable that the substrate to be vapor-deposited be brought into close contact with such an intermediate substrate. The substrate to be vapor-deposited may be adhered with a double-sided tape or an adhesive, or the substrate to be vapor-deposited may be electrostatically adsorbed to the intermediate substrate. . Alternatively, a material in which a magnetic material is dispersed in a binder or the like may be applied to the intermediate substrate contact surface of the substrate to be deposited, and the magnetic material may be attracted to the intermediate substrate by the magnetic force of a magnet.
Alternatively, a photoresist may be used as an adhesive, and a light-transmitting one may be used as an intermediate substrate, and after vapor deposition, exposure may be performed at a photosensitive wavelength of the photoresist so that the adhesive strength is weakened and the photoresist is peeled off.

Although the present invention has been described as a vapor deposition method for forming an organic EL element, the present invention is not limited to this application, and a fine vapor deposition pattern is formed on an organic film using a metal mask. It goes without saying that the present invention can be applied to any use.

[0034]

EXAMPLES The present invention will be described in detail below, but the present invention is not limited to these examples.

Example 1 An external size of 40 was used as a mask for separating an organic EL light emitting layer.
As shown in FIG. 1, 360 μmm pitch × 320 slits 11 were formed with a slit width of 80 μm on a SUS430 plate having a size of 0 × 400 mm and t = 100 μm. Metal mask 10 is used to prevent slack
It is held in tension.

As the cathode separation mask, SUS4
30 external size: 400 × 400 mm, t = 100
In order to prevent the metal mask from sagging, a plate with a pitch of 240 μm and a slit width of 260 μm formed in nine places in a region of 120 × 100 mm was formed on a μm plate.
Use the one that is held under tension.

An example of manufacturing the organic EL device illustrated in FIG. 2 using such a mask will be described.

First, a glass substrate 21 having a thickness of 1.1 m
Indium tin oxide (ITO) was deposited thereon to a thickness of 100 nm as an anode 22 using a glass plate having a thickness of 100 m.
A glass substrate with an O electrode film was obtained.

The ITO transparent electrode film deposited on the glass substrate 21 was formed by photolithography and wet etching to form 960 stripes having a line width of 0.08 mm and a pitch of 0.12 mm to form the anode 22. After pattern formation, the ITO substrate was washed with an organic solvent, and then UV / ozone washing was performed. Next, an organic film was formed on the ITO electrode. Organic material N, N'-diphenyl-N, which was put in a crucible in a vacuum evaporation machine as hole transport layer 23,
N'-bis (α-naphthyl) -1,1'-biphenyl-
4,4′-Diamine (hereinafter referred to as α-NPD) was supplied to the inside of a vacuum deposition apparatus by a vacuum pump at 1.33 mPa (1 × 10 ^−5).
After evacuation to Torr or less, 50 nm was uniformly deposited on the ITO electrode 22.

After the hole transport layer 23 is formed, the surface of the glass substrate 21 opposite to the surface on which the hole transport layer 23 is formed is 390.times.390 mm using the metal mask for separating the organic light emitting layer.
An anisotropic double-sided unipolar magnetized rubber magnet of t = 3 mm was arranged, and a metal mask was adhered to the substrate. The used magnet has a residual magnetic flux density of 0.2282 T and a coercive force of 1671.
18 A / m (2100 Oe), specific coercive force: 22441
5.6 A / m (2820 Oe), maximum energy product:
1.24 kJ / m ³ (MGOe), and at this time, the attraction force of the metal mask is 29.4 kPa (300 g / c).
m ² ). Red light emitting layer 2 by shadow mask method
4R, the green light emitting layer 24G, and the blue light emitting layer 24B were formed in parallel on the ITO electrodes 22 formed in a stripe shape.
First, tris red light emitting layer 24R (8- Kinoriraito) aluminum complex (hereinafter, referred to as Alq ₃₎ as a dopant to 4-dicyanomethylene-2-methyl-6-
(P-dimethylaminostyryl) -4H-pyran (DC
M, the doping concentration 5 wt%) was deposited 50nm both then after shifting the mask by the same pitch as ITO electrode, quinacridone the (doping concentration 5 wt%) was deposited 50nm co as a dopant Alq ₃ as a green light emitting layer 24G, Further, after sliding the mask by the same pitch as the ITO electrode, 50 n of perylene was used as the blue light emitting layer 24B.
m was deposited. Thus, a light emitting layer is formed. Next, Alq ₃ was uniformly deposited to a thickness of 50 nm as the electron transport layer 25. All of these steps were performed under vacuum. Finally IT
A stripe-shaped cathode 26 orthogonal to the O electrode 22 and the stripe of the light emitting layer is formed on the electron transport layer 25. The electrodes are formed by a shadow mask method using the above-described metal mask for cathode separation so that the glass substrate is brought into close contact with the metal mask by the magnet. The cathode material used at this time is an alloy of Al and Li, and is binary deposited so that the ratio of Al: Li becomes 10: 1. As described above, the EL device shown in the conceptual diagram of FIG. 2 is completed.
FIG. 2 (b) is a partially cutaway perspective view of the EL device having the same configuration.

In the organic EL device formed as described above, no omission of pixels, no malfunction, and the like were observed.

Example 2 In Example 1, as shown in FIG.
A substrate having a thickness of 0.4 mm is used as an intermediate substrate 35 and an aluminum plate (390 × 390 mm, t =
An EL element was produced in the same manner as in Example 1 except that a material having a thickness of 2 mm, a Young's modulus of 72 GPa, and a relative magnetic permeability of 2 was adhered and fixed with a double-sided tape. The metal mask 32 is fixed to the frame 31 by welding, and a magnet 36 is disposed on the intermediate substrate.

In the organic EL device formed as described above, no omission of pixels, no malfunction, and the like were observed.

Example 3 As a magnet, an isotropic single-sided multipolar magnetized rubber magnet (390 ×
390 mm, t = 2 mm, residual magnetic flux density: 0.1452
T, coercive force: 95758.8 A / m (1203 Oe),
Specific coercive force: 174562.8 A / m (2193O
e), maximum energy product: 0.47 kJ / m ³ (MGO
e), 390 × 390 mm as an intermediate substrate, t =
2 mm glass plate (Young's modulus = 68 GPa, relative magnetic permeability =
An organic EL device was produced in the same manner as in Example 2 except that the glass substrate and the intermediate substrate were electrostatically adsorbed using 1).
The attraction force when holding the metal mask using the magnet and the intermediate substrate was 29.4 kPa (300 g / cm ² ).

In the organic EL device formed as described above, no omission of pixels, no malfunction, and the like were observed. Further, the substrates in Examples 2 and 3 can be applied to films.

[0046]

As described above, according to the present invention, when the metal mask is held in close contact with the substrate to be deposited by the magnet, introduction of damage to the organic film is suppressed by regulating the attraction force. Even if a metal mask having a slit pattern in a shape is used, the deformation of the mask pattern can be suppressed, so that an organic EL element with less defects can be manufactured.
Further, by inserting the intermediate substrate between the deposition target substrate and the magnet, it becomes easy to make the substrate thinner and convert the substrate to a film.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a metal mask used in the present invention.

FIG. 2 is a schematic sectional view (a) and a partially cutaway perspective view (b) of an organic EL device manufactured by applying the present invention.

FIG. 3 is a conceptual diagram illustrating a vapor deposition method using an intermediate substrate.

4A and 4B are conceptual diagrams illustrating a conventional problem. FIG. 4A illustrates a problem of substrate warpage during vapor deposition, FIG. 4B illustrates a solution to the problem, and FIG. 4C illustrates a problem in FIG. ing.

FIG. 5 is a diagram illustrating another conventional problem of deformation of a metal mask.

FIGS. 6A and 6B are a partial cross-sectional view and a partially enlarged cross-sectional view illustrating a subject of the present invention.

FIGS. 7A and 7B are a partial cross-sectional view and a partially enlarged cross-sectional view illustrating an object of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Metal mask 11 Slit 21 Substrate 22 Anode (ITO) 23 Hole transport layer 24 Light emitting layer 24R Red light emitting layer 24G Green light emitting layer 24B Blue light emitting layer 25 Electron transport layer 26 Cathode 31 Frame 32 Metal mask 33 Glass substrate 34 Double-sided tape 35 Intermediate board 36 magnet

Claims (22)

[Claims] In a mask vapor deposition method for performing vapor deposition on an organic film by holding a metal mask in close contact with a substrate on which the organic film is formed by magnetic force, the metal mask is opposite to a metal mask contact surface of the substrate. A mask vapor deposition method, wherein a magnet larger than the pattern area of the metal mask is provided on the surface, and the metal mask is held by the magnet with a suction force of 0.98 kPa to 98 kPa on the substrate to be vapor-deposited. 2. The holding of the metal mask by the magnet with the tension applied to the metal mask is 49 kPa.
2. The method according to claim 1, wherein the attraction force is as follows. 3. The mask vapor deposition method according to claim 1, wherein the magnet is an anisotropic double-sided monopolar magnetized magnet having a north pole on one side and a south pole on the other side. 4. The mask vapor deposition method according to claim 3, wherein vapor deposition is performed while tension is applied to the mask. 5. The mask vapor deposition method according to claim 1, wherein the magnet is a plate-shaped permanent magnet or an electromagnet. 6. The metal mask according to claim 1, wherein the pattern formed on the metal mask is a parallel slit.
The mask evaporation method according to any one of the above items. 7. The mask vapor deposition method according to claim 1, wherein a magnetically permeable intermediate substrate is disposed between the magnet and the substrate to be vapor deposited. 8. The method according to claim 7, wherein the intermediate substrate is made of a material having a thickness of 0.3 to 10 mm and a Young's modulus of 10 GPa or more. 9. The method according to claim 7, wherein the substrate to be deposited is bonded to the intermediate substrate. 10. The method according to claim 7, wherein the substrate to be deposited is electrostatically adsorbed to the intermediate substrate. 11. The mask vapor deposition method according to claim 7, wherein a substance containing a magnetic substance is distributed on the intermediate substrate contact surface of the substrate to be vapor-deposited, and the magnetic substance is attracted to the intermediate substrate by magnetic force. 12. A mask in which a magnet is arranged on a surface opposite to a deposition surface of a substrate to be deposited while the substrate is aligned with a metal mask for deposition, and the metal mask is brought into close contact with the deposition surface of the substrate to be deposited by magnetic force. In a detachable device, a magnetically permeable intermediate substrate is disposed between a substrate to be deposited and a magnet. 13. The mask attaching / detaching apparatus according to claim 12, wherein the intermediate substrate is made of a material having a thickness of 0.3 to 10 mm and a Young's modulus of 10 GPa or more. 14. The apparatus according to claim 12, wherein the substrate to be deposited is bonded to the intermediate substrate. 15. The mask attaching / detaching apparatus according to claim 12, wherein the substrate to be deposited is electrostatically attracted to the intermediate substrate. 16. The mask attaching / detaching apparatus according to claim 12, wherein a substance containing a magnetic substance is distributed on the intermediate substrate contacting surface of the substrate to be deposited and is attracted to the intermediate substrate by magnetic force. 17. A method according to claim 17, wherein the substrate to be deposited is a substrate on which an organic film is formed, and a magnet larger than a pattern area of the metal mask is provided on a surface of the substrate to be deposited opposite to a metal mask contacting surface. 17. The mask attaching / detaching apparatus according to claim 12, wherein the metal mask is held with a suction force of 0.98 to 98 kPa with respect to the substrate to be vapor-deposited. 18. The metal mask held by the magnet with the tension applied to the metal mask is 49 kP.
18. The mask attaching / detaching apparatus according to claim 17, wherein the attraction force is not more than a. 19. The mask attaching / detaching apparatus according to claim 17, wherein the magnet is an anisotropic double-sided monopolar magnetized magnet having a north pole on one side and a south pole on the other side. 20. The apparatus according to claim 19, wherein the mask is held in tension. 21. The mask attaching / detaching apparatus according to claim 12, wherein the magnet is a plate-shaped permanent magnet or an electromagnet. 22. The mask attaching / detaching apparatus according to claim 12, wherein the pattern shape formed on the metal mask is a parallel slit.