JP2002050861A - Device and method for cold junction - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method for cold junction by which a junction that joins electronic parts to a circuit forming body by utilizing cold junction can be mass-produced with a stable quality and a cold-joined junction. SOLUTION: After an IC chip 1 and a substrate 2 are carried in a hermetically sealed chamber 13, the surfaces of the electrodes 3 of the chip 1 or connecting electrodes 4 provided on the substrate 2 are activated with an energy wave and the electrodes 3 and 4 are joined to each other under a condition where the oxygen concentration in the chamber 13 is reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a room-temperature bonding apparatus and method for bonding electronic components and circuit-forming members by bringing the parts to be bonded into contact with each other at room temperature without using plating, solder, or an adhesive. And a joined body joined at room temperature.

[0002]

2. Description of the Related Art In recent years, electronic components have become smaller and lighter.
Many processes have been proposed for smaller sizes. Conventionally, the method of connecting electronic components to the board is to heat a metal bonding material such as solder in the air and to perform metal fusion bonding, to add ultrasonic energy and connect with frictional energy, and to connect with conductive adhesive The way of doing was common.

The above-mentioned conventional method for assembling electronic components will be described with reference to the drawings, taking flip-chip mounting as an example.

FIG. 12 is a sectional view showing a conventional method of assembling electronic components. 12A and 12B are cross-sectional views showing a state where the IC chip 201 is flip-chip mounted on the substrate 204. FIG. 12C is a cross-sectional view illustrating a state where the chip component 208 is mounted on the substrate 204.

In FIG. 12A, first, the IC chip 20
The first electrode 202 and the connection electrode 205 on the mounting substrate 204 to which the bonding material 203 has been supplied are aligned and then mounted. Thereafter, when the bonding material 3 is a solder, it is melt-bonded, and when the bonding material 3 is a conductive adhesive, it is thermally cured,
The conduction between the electrode 202 of the IC chip 201 and the connection electrode 205 of the mounting substrate 204 is obtained.

On the other hand, in FIG. 12B, first, the electrode 202 of the IC chip 201 attracted to the bonding tool 207 is aligned with the connection electrode 205 on the mounting board 204, The electrodes 202 and 205 are joined by applying ultrasonic energy to the electrodes 202 of the IC chip 201 and the mounting substrate 204.
With the connection electrode 205 is obtained.

Further, in FIG. 12C, the electrode 209 of the chip component 208 is connected to the connection electrode 2 on the mounting board 204.
After positioning with 05, attach. Thereafter, the bonding material 210 is disposed between the chip component 208 and the mounting substrate 204, and is melt-bonded when the bonding material 210 is a solder, and is thermoset when the bonding material 210 is a conductive adhesive. 209 and the electrodes 205 of the mounting board 204 are electrically connected.

However, in the above configuration, the IC
There has been a problem that the electrode and the substrate electrode may be oxidized on the electrode surface during connection due to the influence of oxygen in the atmosphere due to the influence of oxygen in the air, or the adhesion of carbon or the like in the air may hinder the bonding, resulting in poor conduction.

Accordingly, in recent years, room-temperature bonding has been developed in which parts to be bonded between an electronic component and a circuit-forming body are brought into contact with each other at room temperature without using plating, solder, or an adhesive.

This is because an oxide film or an organic film 301 is usually formed on the surface of a metal crystal 300 on the surface of each electrode of an electronic component or a circuit board as shown in FIG. Although the oxide film and the organic film 301 are not bonded even when they are brought into contact with each other, the oxide film and the organic film 301 are activated to be unstable by being removed by a laser beam or the like as shown in FIG. 14 (for example, argon ions 302 in FIG. 14). By bringing the electrode surface 303 of the electronic component activated at room temperature into direct contact with the electrode surface 304 of the substrate to be joined under low pressure as shown in FIG. 15, the contacted electrode surfaces as shown in FIG. Are formed between the atoms.

[0011]

However, there has not been developed an apparatus or a method for mass-producing a joined body for joining electronic components to a circuit board with stable quality by using the above-mentioned ordinary temperature joining. The development of is desired.

Furthermore, in recent years, in IC chips and the like, the area of each electrode has been reduced due to the increase in the number of pins, and there has been a strong tendency for fine wiring. Because of its weakness, the development of a technology for mounting without applying a load has been strongly desired. Since the room-temperature bonding can be applied as one solution to such a demand, development of a technique for mass-producing a joined body in which a compound semiconductor IC chip and a substrate are bonded by room-temperature bonding is desired. .

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems, and to produce a joined body for joining an electronic component to a circuit forming body at room temperature by using ordinary-temperature joining at room temperature with stable quality. An object of the present invention is to provide a bonding apparatus and method, and a bonded body that is bonded at room temperature.

[0014]

In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, the above-described circuit formation is performed with respect to the connection oxidation preventing atmosphere chamber for preventing the electrical connection of the circuit forming body to be joined or the electrical connection of the electronic component from being oxidized. A transfer device for loading and unloading the body or the electronic component, and the electrical connection portion of the electronic component and the electrical connection of the circuit forming body to be connected to the electrical connection portion in the connection portion oxidation prevention atmosphere chamber. A connection portion activation device for activating at least one surface of the connection portion with an energy wave, and thereafter, the electronic component and the circuit forming body are joined at room temperature in an atmosphere for preventing connection portion oxidation, and Provided is a room-temperature bonding apparatus characterized by including a bonding apparatus for electrically connecting an electrical connection part of an electronic component and an electrical connection part of the circuit forming body.

According to a second aspect of the present invention, there is provided the room-temperature bonding apparatus according to claim 1, wherein the connection portion oxidation preventing atmosphere is an oxygen-free atmosphere.

According to a third aspect of the present invention, the joining device joins the electronic component and the circuit forming body at room temperature in the antioxidant atmosphere of the connecting portion under atmospheric pressure, and The room-temperature bonding apparatus according to claim 1 or 2, wherein the electrical connection part of (1) and the electrical connection part of the circuit forming body are electrically connected.

According to a fourth aspect of the present invention, the connection part oxidation preventing atmosphere chamber is provided with an oxygen-free atmosphere in which the circuit forming body or the electronic component is carried in by the transfer device and then replaced with an oxygen-free atmosphere under reduced pressure. An atmosphere exchange chamber, a connection part activation chamber that is disposed subsequent to the oxygen-free atmosphere exchange chamber, and a connection part activation chamber of an oxygen-free atmosphere that is the connection part oxidation prevention atmosphere under reduced pressure in which the connection part activation device is disposed. Is disposed following the connection activation chamber,
And, an inert gas atmosphere exchange chamber for replacing the oxygen-free atmosphere under reduced pressure with an inert gas atmosphere at atmospheric pressure,
2. The room temperature according to claim 1, further comprising: a bonding chamber that is disposed subsequent to the inert gas atmosphere exchange chamber, and that includes an inert gas atmosphere that is the oxidation preventing atmosphere of the connection unit, in which the bonding device is disposed. A joining device is provided.

According to a fifth aspect of the present invention, the connecting portion oxidation preventing atmosphere chamber is provided with an oxygen-free atmosphere in which the circuit forming body or the electronic component is carried in by the transfer device and then replaced with an oxygen-free atmosphere under reduced pressure. An atmosphere exchange chamber, a connection part activation chamber that is disposed subsequent to the oxygen-free atmosphere exchange chamber, and a connection part activation chamber of an oxygen-free atmosphere that is the connection part oxidation prevention atmosphere under reduced pressure in which the connection part activation device is disposed. Is disposed following the connection activation chamber,
And, while being maintained in an oxygen-free atmosphere, which is the connection part antioxidant atmosphere under the reduced pressure, a bonding chamber in which the bonding device is disposed, and disposed subsequent to the bonding chamber, and The room-temperature bonding apparatus according to claim 1, further comprising: an atmospheric pressure exchange chamber that exchanges an oxygen-free atmosphere with an atmospheric pressure.

According to a sixth aspect of the present invention, the connection-oxidation-preventing atmosphere chamber is provided with an oxygen-free atmosphere for replacing the circuit-formed body or the electronic component with an oxygen-free atmosphere under reduced pressure after the carrier device has carried in the atmosphere. An atmosphere exchange chamber, a connection part activation chamber that is disposed subsequent to the oxygen-free atmosphere exchange chamber, and a connection part activation chamber that is an oxygen-free atmosphere that is the connection part oxidation prevention atmosphere under reduced pressure and in which the connection part activation device is disposed. Is disposed following the connection activation chamber,
An inert gas exchange chamber for exchanging the oxygen-free atmosphere under reduced pressure with an inert gas atmosphere at atmospheric pressure; and an oxidizing prevention device disposed next to the inert gas exchange chamber, wherein the connection portion at atmospheric pressure is prevented from being oxidized. A bonding chamber, in which the bonding apparatus is disposed, and an inert gas atmosphere at the atmospheric pressure, which is maintained at an inert gas atmosphere as the atmosphere, and which is disposed subsequent to the bonding chamber, the atmospheric The room temperature bonding apparatus according to claim 1, further comprising an air atmosphere exchange chamber for exchanging the air temperature.

According to a seventh aspect of the present invention, the transfer device is a belt conveyor for mounting and transferring a plurality of the circuit forming bodies to the connection portion oxidation preventing atmosphere chamber. The room-temperature bonding apparatus according to any one of the above items is provided.

According to an eighth aspect of the present invention, the transfer device includes a belt conveyor for mounting and transferring a plurality of the circuit forming bodies to the connection portion oxidation preventing atmosphere chamber and a plurality of the electronic components. The room-temperature bonding apparatus according to any one of claims 1 to 6, further comprising a belt conveyor that is placed and transported.

[0023] According to a ninth aspect of the present invention, the connection activating device is configured to connect the electrical connection of the electronic component and the electrical connection of the circuit forming body in the oxidation preventing atmosphere. The oxide or organic substance on at least one of the surfaces is removed by a laser beam as an energy wave, an energy beam, or plasma, and activated by plasma. Provide a room temperature bonding device.

According to a tenth aspect of the present invention, the electrical connection part of the electronic component or the electrical connection part of the circuit forming body is made of one of Au, Cu, Al, In, and Sn. A room temperature bonding apparatus according to any one of claims 1 to 9 is provided.

According to an eleventh aspect of the present invention, the joining device holds the electronic component and presses and contacts the electronic component on the circuit forming body to join the electronic component. Provide a room temperature bonding device.

According to a twelfth aspect of the present invention, the bonding apparatus holds the electronic component bonding area of the circuit forming body downward and holds the electronic component upward in the electronic component bonding area of the circuit forming body. Claims 1 to 1 by pressing and joining
10. A room-temperature bonding apparatus according to any one of 10.

According to a thirteenth aspect of the present invention, there is further provided a positioning device for performing positioning between the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body. In a state where the electrical connection of the electronic component and the electrical connection of the circuit forming body have been previously aligned under atmospheric pressure, the electronic component and the circuit forming body are oxidized with the connecting portion. A room-temperature bonding apparatus according to any one of claims 1 to 3, wherein the room-temperature bonding apparatus is carried into a prevention atmosphere chamber.

According to a fourteenth aspect of the present invention, the bonding apparatus emits ultrasonic waves when electrically connecting the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body at normal temperature. A room-temperature bonding apparatus according to any one of claims 1 to 13, wherein the apparatus is applied.

[0029] According to a fifteenth aspect of the present invention, the bonding apparatus is capable of forming a bonding material when electrically connecting the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body at normal temperature. A room-temperature bonding apparatus according to any one of claims 1 to 13, wherein the bonding is performed in a state of being interposed.

According to the sixteenth aspect of the present invention, the circuit-forming body or the above-mentioned circuit-forming body is exposed to a connection part oxidation preventing atmosphere for preventing the electrical connection of the circuit-forming body to be joined or the electrical connection of the electronic component from being oxidized. At least one of the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body to be connected to the electrical connection portion in an oxidation preventing atmosphere where the electronic component is located. Activating the surface of the substrate with an energy wave, and then joining the electronic component and the circuit forming body at room temperature in an atmosphere for preventing oxidation of the connection portion,
Provided is a room temperature bonding method, wherein an electrical connection part of the electronic component and an electrical connection part of the circuit forming body are electrically connected.

According to a seventeenth aspect of the present invention, there is provided the room-temperature bonding method according to claim 16, wherein the connection portion oxidation preventing atmosphere is an oxygen-free atmosphere.

According to an eighteenth aspect of the present invention, when the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body are joined to each other, the electrical connection portion is connected to the electrical connection portion at atmospheric pressure in an oxidation preventing atmosphere. 18. The electronic device according to claim 16, wherein the electronic component and the circuit forming body are joined at room temperature to electrically connect an electrical connecting portion of the electronic component and an electrical connecting portion of the circuit forming body. The described room temperature bonding method is provided.

According to a nineteenth aspect of the present invention, when the circuit forming body or the electronic component is positioned in the connection portion oxidation preventing atmosphere, the circuit forming body or the electronic component is carried into the oxygen-free atmosphere exchange chamber. It is performed by replacing the atmosphere with an oxygen-free atmosphere under reduced pressure. The connection is activated, and after the activation and before the bonding, the oxygen-free atmosphere under the reduced pressure is subjected to an atmospheric pressure under an inert gas atmosphere exchange chamber disposed after the connection activation chamber. The method according to claim 16, wherein the bonding is performed in a bonding chamber disposed after the inert gas atmosphere exchange chamber after exchanging with an active gas atmosphere. It provides a joining method.

According to a twentieth aspect of the present invention, when the circuit forming body or the electronic component is positioned in the connection portion oxidation preventing atmosphere, the circuit forming body or the electronic component is carried into the oxygen-free atmosphere exchange chamber. After that, the connection portion was replaced with an oxygen-free atmosphere under reduced pressure, and the connection portion was placed in an oxygen-free atmosphere that was the oxidation prevention atmosphere of the connection portion under reduced pressure of the connection portion activation chamber arranged following the oxygen-free atmosphere exchange chamber. After the activation and before the bonding, the bonding is performed in an oxygen-free atmosphere, which is the antioxidant atmosphere for the connection under the reduced pressure, in a bonding chamber arranged following the connection activation chamber. 17. The method according to claim 16, wherein the oxygen-free atmosphere under reduced pressure is exchanged with an atmospheric pressure in an atmospheric pressure exchange chamber disposed subsequent to the bonding chamber. It provides a joining method.

According to a twenty-first aspect of the present invention, when the circuit forming body or the electronic component is positioned in the connection portion oxidation preventing atmosphere, the circuit forming body or the electronic component is carried into the oxygen-free atmosphere exchange chamber. After that, the connection portion was replaced with an oxygen-free atmosphere under reduced pressure, and the connection portion was placed in an oxygen-free atmosphere that was the oxidation prevention atmosphere of the connection portion under reduced pressure of the connection portion activation chamber arranged following the oxygen-free atmosphere exchange chamber. Performing the activation, in the inert gas exchange chamber disposed subsequent to the connection part activation chamber, the oxygen-free atmosphere under the reduced pressure is replaced with an inert gas atmosphere that is the connection part oxidation prevention atmosphere at atmospheric pressure, The bonding is performed in an inert gas atmosphere that is an atmosphere for preventing oxidation of the connection portion at the atmospheric pressure in the bonding chamber that is disposed subsequent to the inert gas exchange chamber. Provides a room temperature bonding method according to claim 16 which is adapted to replace the inert gas atmosphere of the atmospheric pressure in an air atmosphere exchange chamber disposed subsequent to said bonding chamber to an air atmosphere at atmospheric pressure.

According to a twenty-second aspect of the present invention, the plurality of circuit forming bodies are continuously positioned in the connection portion oxidation preventing atmosphere by a belt conveyor on which the plurality of circuit forming bodies are placed. The room-temperature bonding method according to any one of Items 1 to 21, is provided.

According to a twenty-third aspect of the present invention, the plurality of circuit forming bodies are formed by the belt conveyor on which the plurality of circuit forming bodies are mounted and the belt conveyor on which the plurality of electronic components are mounted and transported. 22. The plurality of electronic components are continuously located in the connection portion oxidation preventing atmosphere.
The room temperature bonding method according to any one of the above items is provided.

According to a twenty-fourth aspect of the present invention, the activation of the connection portion is performed in the atmosphere for preventing oxidation of the connection portion between the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body. 24. The method according to claim 16, wherein an oxide or an organic substance on at least one of the surfaces is removed by a laser beam as an energy wave, an energy beam, or plasma to be activated. Provide a cold bonding method.

According to a twenty-fifth aspect of the present invention, the electrical connection of the electronic component or the electrical connection of the circuit forming body is made of one of Au, Cu, Al, In, and Sn. A room-temperature bonding method according to any one of claims 16 to 24.

According to a twenty-sixth aspect of the present invention, in the bonding, the bonding is performed by holding the electronic component and pressing the electronic component onto the circuit forming body by pressing and contacting the electronic component. Provide a joining method.

According to a twenty-seventh aspect of the present invention, the bonding is performed by holding the electronic component bonding area of the circuit forming body downward and pressing the electronic component upward to the electronic component bonding area of the circuit forming body. Claims 16-
25. The room-temperature bonding method according to any one of 25.

According to a twenty-eighth aspect of the present invention, after the positioning of the electrical connection of the electronic component and the electrical connection of the circuit forming body is performed under atmospheric pressure, the position of the electronic component is adjusted. The electronic component and the circuit forming body are positioned in the connecting part oxidation preventing atmosphere in a state where the electric connecting part and the electric connecting part of the circuit forming body are aligned. The room-temperature bonding method according to any one of 16 to 18, is provided.

According to a twenty-ninth aspect of the present invention, the bonding is performed by applying an ultrasonic wave at room temperature to electrically connect the electrical connection of the electronic component and the electrical connection of the circuit forming body. The room temperature bonding method according to any one of claims 16 to 28 is provided.

According to a thirtieth aspect of the present invention, the bonding is performed with a bonding material interposed when the electrical connection of the electronic component is electrically connected to the electrical connection of the circuit forming body at normal temperature. The room temperature bonding method according to any one of claims 16 to 28, wherein the bonding is performed in a state where the bonding is performed.

According to a thirty-first aspect of the present invention, claim 16 is provided.
30. A joined body constituted by joining the electronic component to the circuit forming body at a room temperature by the room temperature joining method according to any one of the above items.

[0046]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) As shown in FIG. 1, a room temperature bonding apparatus capable of performing the room temperature bonding method according to the first embodiment of the present invention includes an electronic component such as an IC chip 1.
A transport device 5 for transporting the IC chip 1 in the oxygen-free atmosphere chamber 6, and a bump having an apex as an example of an electrical connection portion of the IC chip 1 in the oxygen-free atmosphere chamber 6. At least one surface of the electrodes 3,..., 3 and the electrodes 4,..., 4 as an example of the electrical connection portion of the circuit board 2 to be connected to the bumps 3,. , And then, the IC chip 1 and the circuit board 2 are joined at room temperature to form bumps 3,..., 3 of the IC chip 1 and the electrodes 4,. 4 and a joining device 8 for electrically connecting the connection device 4 to the connection device 4. In this specification including the claims, the “oxygen-free atmosphere” refers to an atmosphere without oxygen at all, or the bumps 3 of the IC chip 1 or the electrodes 4 of the substrate 2 interfere with bonding. To the extent that it is not oxidized (for example, if the oxygen concentration is 100 p
pm or less) means an atmosphere in which oxygen exists. That is, by performing bonding in such an atmosphere, oxidation of the electrodes during bonding is prevented from progressing.

The above-mentioned circuit forming body includes a circuit board (a resin board, a paper-phenol board, a ceramic board, a film board, a glass / epoxy (glass epoxy) board, a film board, a liquid crystal board, etc.), an electronic component, Or
A housing or a frame in which a circuit is formed is included. This means that the IC chip 1 is mounted on the circuit board 2, the IC chip 1 is mounted on an electronic component, and the IC chip 1 is mounted on a circuit of a housing or a frame. The circuit board 2 as an example of the circuit forming body includes:
A plurality of electrodes 4,..., 4 corresponding to the plurality of bumps 3,.
And each bump 3 of the IC chip 1 is mounted on the circuit board 2.
To each of the electrodes 4.

The oxygen-free atmosphere chamber 6 is used for activating the surfaces of the bumps 3 of the IC chip 1 or the electrodes 4 of the substrate 2 and for bonding the two to the oxygen-free atmosphere. As an example, the pressure reducing chamber 6 is used, but it is not limited to this. The gas in the decompression chamber 6 is exhausted from the decompression chamber 6 by the evacuation device 9 through the evacuation port 11 of the decompression chamber 6 or after the gas in the decompression chamber 6 is exhausted. For example, an inert gas such as argon or fluorine gas is supplied into the decompression chamber 6 so that the interior of the decompression chamber 6 can be maintained at a reduced pressure of about 10 ⁻⁷ Pa. A heat stage 13 is disposed below the decompression chamber 6 so that the substrate 2 can be placed thereon and can be heated at the time of bonding.

A chip suction holding and ultrasonic applying device 14 is disposed above the heat stage 13, and the position adjusting device 15 controls the heat stage 1.
The substrate 2 held on 3 and the IC chip 1 held by the chip suction holding and ultrasonic applying device 14 can be positioned.

The transfer device 5 allows the IC chip 1 and the circuit board 2 to be carried in and out of the decompression chamber 6. And a board transfer device 5 for loading and unloading the circuit board 2 into and from the decompression chamber 6.
B.

The IC chip transport device 5A carries the IC chips 1,..., 1 in a tray, for example, with the tray as it is, by using a belt conveyor or a robot arm or the like, to carry it into the decompression chamber 6, and Then, the tray emptied by the joining or the tray on which only the non-defective IC chips 1 used for joining are placed and the defective IC chips 1 are placed is unloaded. Alternatively, only one or several IC chips 1 to be joined are connected by a belt conveyor or a robot arm or the like.
The IC chip 1 may be carried into the decompression chamber 6 and only the defective IC chip 1 may be carried out.

The IC chip 1 carried into the decompression chamber 6 is suction-held by the above-mentioned chip suction-holding and ultrasonic applying device 14. That is, the chip suction holding and ultrasonic applying device 14 sucks and holds the suction nozzle 21 on the upper surface opposite to the bonding surface of the IC chip 1 and the IC chip 1 sucked by the suction nozzle 21 on the substrate 2. An ultrasonic wave generating unit 22 that generates an ultrasonic wave at the time of bonding and applies the ultrasonic wave to the IC chip 1 that has been attracted is provided. The bumps 3 are formed in advance on the electrodes on the bonding surface on the lower surface of the IC chip 1. Each of the bumps 3 is made of Au, Cu, Al, or the like, and may be previously bonded to the substrate 2 by performing leveling for aligning the plurality of bumps 3,. So-called stud bump bonding, in which a constant pressure is applied so that each bump 3 is plastically deformed and brought to a predetermined height when directly contacting the electrode 4 of the substrate 2 without performing leveling, may be performed. Good.

On the other hand, the substrate transfer device 5B carries in and out a predetermined number of substrates 2,. After being carried into the decompression chamber 6, it is positioned and held on the heat stage 13.

The connecting part activating device 7 causes the energy wave irradiating part 7 a at the tip to be driven by the driving device 7 b so that the IC chip 1 sucked and held by the suction nozzle 21 and the substrate 2 on the heat stage 13 are connected. It is possible to get in and out of the space between. Therefore, after the inside of the decompression chamber 6 is made to be an oxygen-free atmosphere, the energy wave irradiating section 7 a at the tip is placed in the space between the IC chip 1 sucked and held by the suction nozzle section 21 and the substrate 2 on the heat stage 13. From the energy wave irradiating portion 7a at the tip toward one of the surfaces of the bumps 3 of the IC chip 1 and the electrodes 4 of the circuit board 2 to be connected to the bumps 3. To each bump 3 or each electrode 4
The surface is uniformly modified to remove contaminants on the surface and expose a clean surface, thereby uniformly activating the surface to make it unstable. For example, when only the surface of each bump 3 of the IC chip 1 is to be modified, the energy wave irradiating section 7 on the upper end of the connection section activating device 7 is used.
a, an energy wave, for example, a laser beam, is uniformly applied to the surface of each bump 3 of the IC chip 1 to uniformly modify the surface of each bump 3 to expose a clean surface. The surface of the bump 3 is uniformly activated to be unstable. On the other hand, when only the surface of each electrode 4 of the circuit board 2 is to be modified, only the energy wave irradiating section 7a below the tip of the connection section activating device 7
The surface of each electrode 4 is uniformly irradiated with an energy wave, for example, a laser beam, toward the surface of each electrode 4 of the circuit board 2 to uniformly reform the surface of each electrode 4 to expose a clean surface. Are activated uniformly to make them unstable.
Preferably, each bump 3 of the IC chip 1 and each bump 3
Activate both surfaces of each electrode 4 of the circuit board 2 to be connected to the circuit board 2 to make it unstable. That is, the bumps 3 of the IC chip 1 and the electrodes 4 of the circuit board 2 are simultaneously supplied from both the upper and lower energy wave irradiators 7 a and 7 a at the tip of the connection unit activation device 7. The surface of each bump 3 and each electrode 4 is uniformly irradiated with an energy wave, for example, a laser beam, to uniformly reform the surface of each bump 3 and each electrode 4 to expose a clean surface. It activates uniformly and makes it unstable.

As the energy wave, a laser beam, an energy beam such as an ion beam, an atomic beam, a radical beam, or plasma (for example, Ar plasma) can be used. As a laser for emitting the laser beam, a YAG laser, a CO ₂ laser, an excimer laser, or the like can be used.

The joining device 8 joins the IC chip 1 and the circuit board 2 at room temperature, and
Are electrically connected to the respective bumps 3 and the respective electrodes 4 of the circuit board 2. In the joining device 8, the heat stage 13 is fixed to the fixing portion 8 a at the lower end, and the movable portion 8 b is arranged to be able to move up and down so as to face the heat stage 13. The chip suction holding and ultrasonic applying device 14 is fixed to the lower surface of the movable portion 8b. The movable portion 8b having the chip suction holding and ultrasonic applying device 14 includes a plurality of, for example, four guide rods 8c,. , 8c
, And can be moved up and down by driving the driving device 8d while being smoothly guided. Accordingly, the movable unit 8 is driven by the driving device 8 d with respect to the substrate 2 on the heat stage 13.
b is lowered to bring the IC chip 1 sucked and held by the chip sucking and holding and ultrasonic applying device 14 into direct contact, and furthermore, a predetermined load, for example, 50 to 50 mm, is driven by the driving device 8d via the movable portion 8b. The IC chip 1 is joined to the substrate 2 by applying a load of 100 kg. The position adjustment of the IC chip 1 with respect to the substrate 2 on the heat stage 13 in two directions orthogonal to each other in the horizontal direction can be performed by moving the suction nozzle portion 21 of the chip suction holding and ultrasonic applying device 14 in the two directions. It is possible to achieve by doing. In addition, the heat stage 13 may be provided with an adjustment mechanism capable of moving and adjusting the position of the substrate 2 in the two directions. Also, the parallelism of the IC chip 1 with respect to the substrate 2 on the stage 13 can be adjusted by adjusting the suction nozzle unit 21 of the chip suction holding and ultrasonic applying device 14 in the vertical direction perpendicular to the two directions. This can be achieved by: In addition, the heat stage 13 may be provided with an adjustment mechanism capable of moving and adjusting the parallelism of the substrate 2 in the vertical direction. As an example, the bonding alignment between the IC chip 1 and the circuit board 2 can be, for example, an alignment accuracy of ± 5 μm and a parallelism of ± 2 μm.

Operations such as loading and unloading of the transfer device 5, ie, the IC chip transfer device 5A and the substrate transfer device 5B, the heating operation of the heat stage 13, the exhaust device 9,
Various operations of the inert gas supply device 10 and the chip suction holding and ultrasonic applying device 14, for example, an on / off operation and a position adjustment operation of a suction circuit for performing a suction operation of the suction nozzle unit 21, and an ultrasonic generation unit 22 The sound wave generation operation, the operation of the connection unit activation device 7, the bonding operation of the bonding device 8, the parallelism adjustment operation, and the like are appropriately controlled by the control device 29.

According to the room-temperature bonding apparatus having the above configuration,
Room-temperature bonding is performed as follows. The following operations are performed under the control of the control device 29.

That is, the IC chip 1 and the circuit board 2 are carried into the decompression chamber 6 under the atmospheric pressure, for example, by the transfer device 5. IC chip 1 to be joined
Is sucked and held by the suction nozzle unit 21 of the chip applying and holding and ultrasonic applying device 14. On the other hand, the substrate 2 to which the IC chip 1 is to be bonded is placed and held on the heat stage 13 so as to face the IC chip 1 sucked and held by the suction nozzle unit 21.

Next, the decompression chamber 6 is closed.
Through the exhaust port 9 by the exhaust device 9.
As the gas in the decompression chamber 6 is exhausted,
Air supply to the decompression chamber 6 by the inert gas supply device 10
An inert gas such as argon is supplied from the port 12 to the vacuum chamber.
Is supplied into the chamber 6 and the inside of the decompression chamber 6 becomes 10 ^-7
It is maintained at a reduced pressure of about Pa,
Oxygen atmosphere.

Next, any one of the bumps 3 of the IC chip 1 and the electrodes 4 of the circuit board 2 to be connected to the bumps 3 from the energy wave irradiating section 7 a at the tip of the connection section activating device 7. By irradiating the energy wave toward one of the surfaces, the surface of each bump 3 or each electrode 4 is modified,
Exposing the clean surface activates the surface and renders it unstable. At this time, if necessary, dust such as impurities generated when the surface of each bump 3 or each electrode 4 is modified by irradiation of energy waves may be sucked and discharged out of the decompression chamber 6. Good.

Then, the position of each bump 3 of the IC chip 1 and each electrode 4 of the circuit board 2 to be connected to each bump 3 is adjusted and the IC chip 1 And the circuit board 2 are adjusted in parallelism. The position adjustment and the parallelism adjustment may be performed before the surface modification step of each bump 3 or each electrode 4.

Next, the driving device 8d of the joining device 8 is driven to lower the movable portion 8b, and the tip suction holding and ultrasonic applying device 14 is lowered, so that the suction nozzle 21
Bumps 3 of the IC chip 1 and the bumps 3
The ultrasonic bonding is performed by applying ultrasonic waves to the IC chip 1 from the ultrasonic wave generating section 22 while applying a predetermined load from the movable section 8b while directly contacting each electrode 4 of the circuit board 2 to be connected to the IC chip 1. I do. At this time, the vacuum chamber 6
By maintaining the above-described oxygen-free atmosphere inside, the surface-modified state of each bump 3 or each electrode 4 can be maintained. Further, the temperature at the time of the joining operation may be room temperature. The heat stage 13 heats the substrate 2 to a predetermined temperature (for example, at most 150 ° C.) at the time of the bonding operation, thereby facilitating the bonding and improving the production efficiency by promoting the bonding operation. Is preferred.

Next, after the bonding of the one IC chip 1 is completed, when the IC chips 1 are continuously bonded to the substrate 2 on the heat stage 13,
The same operation as described above is repeated to perform ultrasonic bonding of the IC chip 1. When bonding the IC chip 1 to a different substrate 2, the substrate 2 on the heat stage 13 is replaced when the substrate 2 on the heat stage 13 is replaced with another substrate 2 and the IC chip 1 is bonded. After the replacement of the substrate 2 with another substrate 2, the surface modification operation and the bonding operation are performed on the replaced substrate 2 and the IC chip 1 to be bonded to the substrate 2. After all the joining is completed, the exhaust operation by the exhaust device 9 is stopped, the inert gas supply operation by the inert gas supply device 10 is stopped, and the pressure in the decompression chamber 6 is reduced by the supply of air. After returning from oxygen atmosphere to atmospheric pressure, the above IC
The bonded body in which the chip 1 is bonded to the substrate 2 is carried out of the decompression chamber 6 by the substrate carrying out device.

In this way, the loading operation of the IC chip 1 and the substrate 2, the decompression and oxygen-free atmosphere forming operation, the surface reforming operation, the bonding operation, and the unloading of the bonded body in which the IC chip 1 is bonded to the substrate 2 The operation is performed under the control of the control device 29, and the operation is repeated as needed under the control of the control device 29.

According to the first embodiment, one or a plurality of IC chips 1,..., And one or a plurality of circuit boards 2,. After the oxygen atmosphere, the surface of each bump 3 of the IC chip 1 to be joined or the surface of each electrode 4 of each circuit board 2 is modified, and each bump 3 of the IC chip 1 is connected to each electrode 4 of each circuit board 2. After performing ultrasonic bonding, the above IC chip 1
A series of operations such as unloading the bonded body bonded to the substrate 2 can be controlled by the control device 29. Therefore, a joined body in which the IC chip 1 is joined to the circuit board 2 using room-temperature joining can be efficiently mass-produced with stable quality. In addition, low pressure (for example, conventionally 50g
/ 100 μm ² , but in this embodiment, the conventional 1
Since the bonding operation can be performed at 1/0 (5 g / 100 μm ² low pressure), the present invention can be applied to a compound semiconductor IC chip having a fine electrode wiring.

(Second Embodiment) FIG. 2 shows a room temperature bonding apparatus capable of performing a room temperature bonding method according to a second embodiment of the present invention.

The room-temperature bonding apparatus according to the second embodiment is different from the room-temperature bonding apparatus according to the first embodiment in that the surface modification and the bonding operation are not performed in one chamber, but in different chambers. By performing the above operation, it is possible to more efficiently produce a joined body.

As shown in FIG. 2, the room-temperature bonding apparatus according to the second embodiment includes an oxygen-free atmosphere exchange chamber 31,
A surface treatment chamber 32 as an example of a connection part activation chamber, an inert gas atmosphere exchange chamber 33, and a bonding chamber 34 are sequentially arranged in this order, and these chambers 31, 32, 33, and 34 are transferred to the substrate. When the apparatus, for example, the belt conveyor 30 penetrates in the order of arrangement, the substrates 2,.
Are arranged so as to continuously pass through each chamber.

The belt conveyor 30 may run continuously or may run intermittently.

The oxygen-free atmosphere exchange chamber 31 is
By driving the exhaust and gas supply device 38, the substrate 2 loaded from outside the device by the belt conveyor 30.
Is changed from an atmosphere of air under atmospheric pressure to an oxygen-free atmosphere under reduced pressure of about 10 ⁻⁷ Pa, for example.

The surface treatment chamber 32 always maintains an oxygen-free atmosphere under reduced pressure equivalent to that of the oxygen-free atmosphere exchange chamber 31 by driving the exhaust and gas supply device 39. In this oxygen-free atmosphere, the surface of each electrode 4 of the substrate 2 carried in from the oxygen-free atmosphere exchange chamber 31 by the belt conveyor 30 is uniformly irradiated with an ion beam from the ion beam irradiation device 35, thereby obtaining The oxide film and the organic film on the surface of the electrode 4 are removed to uniformly activate and destabilize the surface of each electrode 4.

The above-mentioned inert gas atmosphere exchange chamber 33
By driving the exhaust and gas supply device 40,
The atmosphere around the substrate 2 carried by the belt conveyor 30 from the surface treatment chamber 32 is exchanged from an oxygen-free atmosphere under reduced pressure to an inert gas atmosphere under atmospheric pressure.

The joining chamber 34 is maintained under the same inert gas atmosphere at the same atmospheric pressure as the inert gas atmosphere exchange chamber 33 by the exhaust and inert gas supply device 41. In the bonding chamber 34, an adsorption bonding device 36 as an example of a bonding device is disposed so as to be movable up and down and left and right.
An IC chip supply unit (not shown) holding and storing... 1 is arranged. The suction bonding device 36 enables the IC chip 1 to be sucked and held on the lower surface thereof. 2 This bonding operation is preferably ultrasonic bonding similar to that of the first embodiment. The inert gas atmosphere is not limited to this,
Any atmosphere may be used as long as the bumps 3 of the IC chip 1 or the electrodes 4 of the substrate 2 do not interfere with the bonding. , N ₂ , He or the like may be filled with a non-reactive gas.

The driving device 30A such as the motor of the belt conveyor 30, the exhaust and gas supply devices 38, 39, and 40 in each chamber, the ion beam irradiation device 35, the adsorption bonding device 36, and the heating device 42, if necessary, are adjacent to each other. When a shutter for partitioning between the chambers is provided, the opening and closing drive of the shutter is controlled by the control device 37. Therefore, the operation of loading and unloading each substrate 2 into and from each chamber by the belt conveyor 30, the operations such as independent exhaust and inert gas supply in each of the chambers 31, 32, and 33, and various operations of the adsorption bonding device 36. For example, the on / off operation and position adjustment operation of the suction circuit for performing the suction operation, the ultrasonic wave generation operation, the parallelism adjustment operation, the ion beam irradiation operation of the ion beam irradiation device 35, the heating operation of the heating device 42, and the like are performed as follows. The control device 37 controls the operation as appropriate.

According to the room-temperature bonding apparatus having the above structure,
Room-temperature bonding is performed as follows. The following operations are performed under the control of the control device 37.

First, the circuit boards 2,..., 2 are placed on the belt conveyor 30 at predetermined intervals in an atmosphere of air at atmospheric pressure, and the circuit board 2 is driven by the belt conveyor 30 at atmospheric pressure. It is carried into the oxygen-free atmosphere exchange chamber 31 from the air atmosphere. When the circuit board 2 is carried into the oxygen-free atmosphere exchange chamber 31, the atmosphere in the oxygen-free atmosphere exchange chamber 31 is an atmospheric air atmosphere. Then, after the circuit board 2 is loaded into the oxygen-free atmosphere exchange chamber 31, the exhaust of the oxygen-free atmosphere exchange chamber 31 and the gas supply device 38 are driven to change the atmosphere of the oxygen-free atmosphere exchange chamber 31 to atmospheric pressure air. The atmosphere is changed from the atmosphere to an oxygen-free atmosphere.

Next, the oxygen-free atmosphere exchange chamber 31
Is brought into an oxygen-free atmosphere, the circuit board 2 in the oxygen-free atmosphere exchange chamber 31 is carried by the belt conveyor 30 from the oxygen-free atmosphere exchange chamber 31 into the adjacent surface treatment chamber 32. The surface treatment chamber 32 is always maintained in an oxygen-free atmosphere by the exhaust and gas supply device 39 of the surface treatment chamber 32. When the circuit board 2 on the belt conveyor 30 is positioned at a predetermined ion beam irradiation position in the surface treatment chamber 32 by traveling of the belt conveyor 30, the ion beam is directed toward the surface of each electrode 4 of the circuit board 2. By irradiating the ion beam uniformly from the irradiation device 35 and removing the oxide film and the organic film on the surface of each electrode 4, the surface of each electrode 4 is uniformly activated and the surface is modified as unstable. Do. At this time, it is preferable that the inside of the surface treatment chamber 32 be reduced in pressure to about 10 ⁻⁷ Pa.

Next, when the surface modification of each electrode 4 of the circuit board 2 in the surface treatment chamber 32 is completed, the circuit board 2 is transferred from the surface treatment chamber 32 to the inert gas atmosphere exchange chamber 33 by the belt conveyor 30. It is carried in. When the circuit board 2 is carried into the inert gas atmosphere exchange chamber 33, the inert gas atmosphere exchange chamber 33 is maintained in an oxygen-free atmosphere. After the circuit board 2 is loaded into the inert gas atmosphere exchange chamber 33, the inert gas atmosphere exchange chamber 3
By driving the exhaust and gas supply device 40 of No. 3, the oxygen-free atmosphere is replaced with an inert gas atmosphere at atmospheric pressure.

Next, when the inert gas atmosphere exchange chamber 33 becomes an inert gas atmosphere such as an argon gas at atmospheric pressure, the circuit board 2 is joined from the inert gas atmosphere exchange chamber 33 by the belt conveyor 30 to the joining chamber 34. It is carried in. This bonding chamber 3
Reference numeral 4 denotes an inert gas atmosphere, not a closed space as described above. In this inert gas atmosphere, the adsorption bonding device 36 operates the IC chips 1,.
One IC from the IC chip supply unit that holds
After holding the chip 1 by suction, the suction bonding apparatus 36 moves to above the circuit board 2 on the belt conveyor 30 carried into the bonding chamber 34, and then the suction bonding apparatus 36
The IC chip 1 sucked and held by the suction bonding device 36 is bonded to the circuit board 2 on the belt conveyor 30 while being pressed. This joining operation is performed by the belt conveyor 30.
It is preferable to perform the same ultrasonic bonding as in the first embodiment while heating the circuit board 2 on the belt conveyor 30 by the heating device 42 disposed below. The bumps 3 are formed in advance on each electrode of each IC chip 1, and the bumps 3 are brought into direct contact with the activated electrodes 4 of the IC chip bonding portion of the circuit board 2 so as to be bonded at room temperature. It has become. If the circuit board 2 has only one IC chip bonding portion, the IC chip 1 is bonded to the IC chip bonding portion, and then the IC chip 1 is connected to the circuit board 2.
The bonded body is carried out of the bonding chamber 34 by the belt conveyor 30. On the other hand, when the circuit board 2 has a plurality of IC chip joints, the IC chips 1 are joined to each IC chip joint, and then the plurality of IC chips 1 and 1 are joined to the circuit board 2. The bonded body is carried out of the bonding chamber 34 by the belt conveyor 30.

According to the second embodiment, while a large number of circuit boards 2,..., 2 are continuously or intermittently run by the belt conveyor 30, the loading and unloading operations for each atmosphere and the operation of each circuit board 2 are performed. Surface modification operation of each electrode 4 and IC
Since the normal-temperature bonding operation of the chips 1 can be performed independently and simultaneously in parallel, the manufacturing efficiency of the bonded body can be improved as a whole, and the bonded body can be efficiently mass-produced. In addition, since the bonding operation can be performed at a low pressure (for example, 50 g / 100 μm ² in the related art, but in this embodiment, a low pressure of about 1/10 of 5 g / 100 μm ² ), the electrode wiring is fine. The present invention can also be applied to integrated compound semiconductor IC chips and the like.

(Third Embodiment) FIGS. 3 and 4 show a room temperature bonding apparatus capable of performing a room temperature bonding method according to a third embodiment of the present invention. The third embodiment is significantly different from the second embodiment in that, like the substrate 2, the IC chip 1 runs on the belt conveyor in the same direction as the substrate 2.

That is, as shown in FIGS. 3 and 4, the room-temperature bonding apparatus according to the third embodiment includes a vacuum exchange chamber 51 as an example of an oxygen-free atmosphere exchange chamber,
A surface treatment chamber 52 as an example of a connection part activation chamber, a bonding chamber 53, and an atmospheric pressure exchange chamber 54 are sequentially arranged in this order, and these chambers 51, 52, 53, and 54 are connected to a substrate transfer device. For example, a belt conveyor 50A and an IC chip transfer device such as a belt conveyor 50B penetrate in the order of arrangement so that the substrates 2, 2 placed on the belt conveyor 50A
, 2 and the chip tray 55 on the belt conveyor 50B.
, 1 are placed so as to continuously pass through each chamber.

The belt conveyors 50A and 50B may run continuously or may run intermittently. In addition, it is preferable that the conveyance of the substrate 2 and the chip tray 55 by the two belt conveyors 50A and 50B be substantially synchronized in order to enhance production efficiency and mounting accuracy.

The substrate 2 is carried into the vacuum exchange chamber 51 from outside of the apparatus by the belt conveyor 50A, and is also provided by the belt conveyor 50B from outside of the apparatus. The four roughly square IC chips 1,..., 1 housed in 55 are carried in. The substrate 2 and the IC chips 1,...
When it is carried into the chamber, the exhaust and gas supply device 68 is driven to supply a gas such as Ar, N ₂ , H ₂ , He, etc., and the atmosphere in the vacuum exchange chamber 51 is changed to air under atmospheric pressure. ^Is replaced with an oxygen-free atmosphere under reduced pressure of about 10 ⁻⁷ Pa, for example.

The surface treatment chamber 52 is moved from the vacuum exchange chamber 51 to the belt conveyor 5 in an oxygen-free atmosphere under the same reduced pressure as the vacuum exchange chamber 51.
An ion beam irradiation device 5 as an example of a connection portion activation device is provided on the surface of each electrode 4 of the substrate 2 carried in by 0A.
By uniformly irradiating the ion beam from 6, an oxide film or an organic film on the surface of each electrode 4 is removed, and the surface of each electrode 4 is uniformly activated and destabilized. At this time, simultaneously, the ion beam is uniformly irradiated from the ion beam irradiation device 56 toward the surface of each bump 3 of the four IC chips 1,. By removing the organic film, the surface of each bump 3 may be uniformly activated to perform surface modification as an unstable one.

The bonding chamber 53 is supplied with a gas such as Ar, N ₂ , H ₂ , He by an exhaust and inert gas supply device 70 under the same reduced pressure and the same oxygen-free condition as the surface treatment chamber 52. The atmosphere or the inert gas atmosphere is maintained. The substrate 2 is loaded into the bonding chamber 53 from the surface treatment chamber 52 by the belt conveyor 50A, and the belt conveyor 50B
From the surface treatment chamber 52, the four roughly square IC chips 1 stored in the chip tray 55
.., 1 are carried in. A mounting head 57 as an example of a bonding apparatus is provided in the bonding chamber 53.
Are disposed movably to the left and right along the upper and lower sides and along the guide rail 59 above the both belt conveyors 50A and 50B.
Right above OB, a chip reversing collet 59 is disposed so as to be movable by a driving device (not shown) in the transport direction of the belt conveyor 50B and in a direction perpendicular to the transport direction. The tip reversing collet 59 has a total of 4
After the suction surface of the IC chip 1 in the chip tray 55 on the belt conveyor 50B is suctioned by the nozzle and only one IC chip 1 is sucked and held, the nozzle is rotated by 180 degrees. And the surface opposite to the mounting surface is positioned upward. The mounting head 57 can hold the upper surface of the IC chip 1 inverted by the chip reversing collet 59 on the lower surface of the mounting head 57 by suction and hold the IC chip 1 on the substrate 2 carried in from the surface treatment chamber 52 by the belt conveyor 50A. 1 is joined. This bonding operation is preferably ultrasonic bonding similar to that of the first embodiment. The oxygen-free atmosphere or the inert gas atmosphere is not limited to this, and may be an IC atmosphere.
Any atmosphere may be used as long as the bumps 3 of the chip 1 or the electrodes 4 of the substrate 2 do not hinder the bonding. For example, after reducing the oxygen concentration, a reducing gas such as hydrogen or a reducing gas such as Ar or N ₂ may be used. , He, or another non-reactive gas.

The atmospheric pressure exchange chamber 54 is carried in by the joined body 20 in which the IC chips 1,..., 1 carried in from the joining chamber 53 by the belt conveyor 50A are joined to the substrate 2, and by the belt conveyor 50B. The atmosphere around the chip tray 55 is exchanged from an oxygen-free atmosphere under reduced pressure equivalent to that of the bonding chamber 53 to an atmosphere of air under atmospheric pressure.

Driving devices such as motors (not shown) of the belt conveyors 50A and 50B, exhaust and gas supply devices 68, 69, 70 and 71 in each chamber, ion beam irradiation device 56, mounting head 57, chip reversing collet 5
9. When a heating device 62 and, if necessary, a shutter for partitioning between adjacent chambers are provided, the opening / closing drive device for the shutter is controlled by a control device 67. Therefore, the belt conveyor 5
The loading and unloading operations of each substrate 2 and each chip tray 55 to and from each chamber by the OA and 50B, the operations such as the independent exhaust and inert gas supply in each of the chambers 51, 52, 53 and 54, and the mounting head Various operations of the chip 57 and the chip reversing collet 59, for example, on-off operation and position adjustment operation of a suction circuit for performing suction operation, ultrasonic wave generation operation, parallelism adjustment operation, ion beam irradiation operation of the ion beam irradiation device 56, heating The heating operation of the device 62 is appropriately controlled by the control device 67.

According to the room temperature bonding apparatus having the above configuration,
Room-temperature bonding is performed as follows. The following operations are performed under the control of the control device 67.

First, the circuit boards 2, 2 are provided on the belt conveyors 50A, 50B at predetermined intervals in an atmosphere of air at atmospheric pressure.
, 2, and the chip trays 55,..., 55 are placed, and by driving the belt conveyors 50A, 50B,
The circuit board 2 and the chip tray 55 are carried into the vacuum exchange chamber 51 from an atmospheric air atmosphere. The circuit board 2 and the chip tray 55 are placed in the vacuum exchange chamber 51.
Is carried in, the atmosphere in the vacuum exchange chamber 51 is an atmosphere of air at atmospheric pressure. Then, the circuit board 2 and the chip tray 5 are placed in the vacuum exchange chamber 51.
After the vacuum exchange chamber 5 is carried in, the exhaust and gas supply device 68 of the vacuum exchange chamber 51 are driven to
1 is changed from an atmosphere of atmospheric pressure air to, for example, 10 ^-7 P
Replace with an oxygen-free atmosphere under reduced pressure of about a.

Next, when the vacuum exchange chamber 51 becomes an oxygen-free atmosphere under reduced pressure, the circuit board 2 and the chip tray 55 in the vacuum exchange chamber 51 are separated from the vacuum exchange chamber 51 by the belt conveyors 50A and 50B, respectively. It is carried into the adjacent surface treatment chamber 52. By the exhaust and gas supply device 69 of the surface treatment chamber 52, the surface treatment chamber 52 is always maintained in an oxygen-free atmosphere under reduced pressure equivalent to that of the vacuum exchange chamber 51. When the circuit board 2 on the belt conveyor 50A is positioned at a predetermined ion beam irradiation position in the surface treatment chamber 52 by traveling of the belt conveyor 50A, the ion beam is directed toward the surface of each electrode 4 of the circuit board 2 By irradiating the ion beam uniformly from the irradiation device 56 and removing the oxide film and the organic film on the surface of each of the electrodes 4, the surface of each of the electrodes 4 is uniformly activated, and the surface is modified as unstable. Do. At this time, at the same time, the four IC chips 1,..., 1 in the chip tray 55 on the belt conveyor 50B are also positioned at the predetermined ion beam irradiation positions in the surface treatment chamber 52 by running the belt conveyor 50B. And 4
A uniform irradiation of the ion beam from the ion beam irradiation device 56 toward the surface of each bump 3 of the IC chips 1,..., 1 to remove the oxide film and the organic film on the surface of each bump 3 Thus, the surface of each bump 3 may be uniformly activated to make the surface unstable, and the surface modification may be performed. At this time, it is preferable that the inside of the surface treatment chamber 52 is under a reduced pressure of about 10 ⁻⁷ Pa, which is the same as that of the vacuum exchange chamber 51.

Next, when the surface modification of each electrode 4 of the circuit board 2 or the surface modification of each electrode 4 of the circuit board 2 and each bump 3 of each IC chip 1 in the surface treatment chamber 52 is completed, The circuit board 2 and the chip tray 55 are carried into the joining chamber 53 from the inside of the surface treatment chamber 52 by the belt conveyors 50A and 50B. When the circuit board 2 and the chip tray 55 are carried into the bonding chamber 53, the bonding chamber 53 is maintained in an oxygen-free atmosphere under reduced pressure equivalent to that of the surface treatment chamber 52. After the circuit board 2 and the chip tray 55 are carried into the bonding chamber 53, first, one IC is removed from the chip tray 55 by the chip inversion collet 59.
After the chip 1 is held by suction, it is turned 180 degrees. Next, the mounting head 57 is moved to the chip reversing collet 59.
To the upper part of the collet 59,
The IC chip 1 sucked and held on the mounting head 57 is sucked and held on the lower surface of the mounting head 57 to receive the IC chip 1 from the chip reversing collet 59. Next, after the mounting head 57 moves up to the original position, the mounting head 57 moves to a position above the IC chip bonding area of the substrate 2 and descends to bond the IC chip 1 adsorbed and held against the IC chip bonding area while pressing. Let it. In this bonding operation, it is preferable to perform the same ultrasonic bonding as in the first embodiment while heating the circuit board 2 on the belt conveyor 50A by the heating device 62 disposed below the belt conveyor 50A. The bumps 3 are previously formed on each electrode of each IC chip 1, and each bump 3 is formed on the circuit board 2.
By directly contacting each of the activated electrodes 4 of the IC chip bonding portion, the bonding is performed at room temperature. In this embodiment, there are four IC chip bonding regions on the circuit board 2, and after bonding the IC chip 1 to each IC chip bonding portion, the four IC chips 1,. The joined body 20 is carried out of the joining chamber 53 to the atmospheric pressure exchange chamber 54 by the belt conveyor 50A.

Next, in the atmospheric pressure exchange chamber 54,
The joined body 20 is carried in from the joining chamber 53 by the belt conveyor 50A, and the belt
When the empty chip tray 55 is carried in from the bonding chamber 53 by OB, the exhaust and gas supply device 71 is driven to change from an oxygen-free atmosphere under reduced pressure equivalent to that of the surface treatment chamber 52 to an atmosphere of atmospheric pressure air. Be exchanged.
After the exchange, the atmosphere becomes the atmosphere of atmospheric pressure, the bonded body 20 is carried out of the atmospheric pressure exchange chamber 54 by the belt conveyor 50A, and the belt conveyor 5
The empty chip tray 55 is carried out of the atmospheric pressure exchange chamber 54 by OB.

According to the third embodiment, a number of circuit boards 2,..., And a number of IC chips 1,. Loading and unloading operations, surface modification operation of each electrode 4 of each circuit board 2 or surface modification operation of each electrode 4 of each circuit board 2 and each bump 3 of each IC chip 1, and room temperature of IC chip 1 Since the joining operation can be performed independently and simultaneously in parallel, the manufacturing efficiency of the joined body can be increased as a whole, and the joined body can be efficiently mass-produced. In addition, since the bonding operation can be performed at a low pressure (for example, 50 g / 100 μm ² in the related art, but in this embodiment, a low pressure of about 1/10 of 5 g / 100 μm ² ), the electrode wiring is fine. The present invention can also be applied to integrated compound semiconductor IC chips and the like.

(Fourth Embodiment) FIGS. 5 and 6 show a room temperature bonding apparatus capable of performing a room temperature bonding method according to a fourth embodiment of the present invention. The fourth embodiment is different from the third embodiment in that a nitrogen gas exchange chamber 81 is disposed between the surface reforming chamber 52 and the bonding chamber 53, and the normal temperature bonding operation is performed in a nitrogen gas atmosphere at atmospheric pressure. The surface modification operation and the bonding operation itself are substantially the same as in the third embodiment.

That is, as shown in FIGS. 5 and 6, the room-temperature bonding apparatus according to the fourth embodiment includes a vacuum exchange chamber 51 as an example of an oxygen-free atmosphere exchange chamber,
Surface treatment chamber 52 as an example of a connection part activation chamber, nitrogen gas exchange chamber 81 as an example of an inert gas exchange chamber, and bonding chamber 53A
And an air atmosphere exchange chamber 54A are sequentially arranged in this order, and these chambers 51, 52, 81, and 5 are arranged.
3A and 54A are connected to a substrate transfer device such as a belt conveyor 5.
0A and an IC chip transport device, for example, a belt conveyor 50
B penetrate in the order of arrangement, so that the substrates 2, 2, and 2 placed on the belt conveyor 50A and the IC chips 1, ..., placed on the belt conveyor 50B with the chip tray 55 interposed therebetween. 1 are arranged so as to continuously pass through each chamber.

The belt conveyors 50A and 50B may run continuously, as in the third embodiment, or may run intermittently. Also,
Substrate 2 by both belt conveyors 50A, 50B
It is preferable that the transfer of the chip tray 55 be substantially synchronized with the transfer of the chip tray 55 in order to increase production efficiency and mounting accuracy.

As in the third embodiment, the vacuum exchange chamber
The member 51 has a belt conveyer 50A that is
The substrate 2 is carried in from the belt conveyor 50B.
Has four roughly square mounting recesses from outside the device
Four chip trays 55 stored in a roughly square chip tray 55
As the roughly square IC chips 1, ..., 1 are carried in
are doing. The substrate 2 and the IC chips 1,.
When loaded into the vacuum exchange chamber 51,
By driving the gas supply device 68, the vacuum exchange
The atmosphere in the chamber 51 is the atmosphere of air under atmospheric pressure.
For example, 10 ^-7Oxygen-free atmosphere under reduced pressure of about Pa
To replace.

As in the third embodiment, the surface treatment chamber 52 is placed in an oxygen-free atmosphere under reduced pressure equivalent to that of the vacuum exchange chamber 51 in the vacuum exchange chamber 5.
By uniformly irradiating the surface of each electrode 4 of the substrate 2 carried in by the belt conveyor 50A with the ion beam from the ion beam irradiation device 56, the electrode 4
The surface of each electrode 4 is uniformly activated and destabilized by removing the oxide film and the organic film on the surface of the substrate.

The substrate 2 is loaded into the nitrogen gas exchange chamber 81 from the surface treatment chamber 52 by the belt conveyor 50A and the belt conveyor 50B.
From the surface treatment chamber 52 to the chip tray 5
5, four substantially square IC chips 1,..., 1 are carried in. When the substrate 2 and the IC chips 1,..., 1 are carried into the nitrogen gas exchange chamber 81, the atmosphere in the nitrogen gas exchange chamber 81 is changed by driving the exhaust and gas supply device 82.
The oxygen-free atmosphere under reduced pressure is replaced with an oxygen-free nitrogen gas atmosphere at atmospheric pressure.

The bonding chamber 53A is maintained at the same atmospheric pressure as the nitrogen gas exchange chamber 81 and in the same oxygen-free nitrogen gas atmosphere by the exhaust and inert gas supply device 70. The substrate 2 is loaded into the bonding chamber 53A from the nitrogen gas exchange chamber 81 by the belt conveyor 50A, and is also loaded by the belt conveyor 50B.
, Four substantially square IC chips 1,..., 1 stored in the chip tray 55 are carried in. In the bonding chamber 53A, a mounting head 57 as an example of a bonding apparatus crosses above the upper and lower belt conveyors 50A and 50B along the upper and lower sides and along the guide rail 59, in other words, above the loaded substrate 2 and chip tray 55. A chip reversing collet 59 is disposed right above the belt conveyor 50B so as to be movable left and right within the range, and is driven by a driving device (not shown) in the conveying direction of the belt conveyor 50B and in a direction perpendicular to the conveying direction. Is arranged so as to be movable. Chip reversing collet 59
Has a total of four suction nozzles at 90-degree intervals, and has a tip tray 5 on the belt conveyor 50B.
5 is attached to the mounting surface of the IC chip 1 by the nozzle, and
After sucking and holding only one C chip 1, the C chip 1 is rotated by 180 degrees and turned upside down to position the surface opposite to the mounting surface upward. The mounting head 57 can hold the upper surface of the IC chip 1 inverted by the chip reversing collet 59 on the lower surface of the mounting head 57 by suction and hold the IC chip 1 on the substrate 2 carried in from the surface treatment chamber 52 by the belt conveyor 50A. 1 is joined. This bonding operation is preferably ultrasonic bonding similar to that of the first embodiment.
The nitrogen gas atmosphere at atmospheric pressure is not limited to this, and may be any atmosphere as long as the bumps 3 of the IC chip 1 or the electrodes 4 of the substrate 2 do not hinder the bonding. Alternatively, the atmosphere may be such that after reducing the oxygen concentration, a reducing gas such as hydrogen or a non-reactive gas such as Ar, N ₂ , or He is filled.

The air atmosphere exchange chamber 54A is
The IC chips 1,..., 1 carried in from the joining chamber 53A by the belt conveyor 50A are joined to the substrate 2 and the atmosphere around the chip tray 55 carried in by the belt conveyor 50B is subjected to the joining. The chamber 53A and the atmosphere of nitrogen gas at atmospheric pressure are exchanged with the atmosphere of air at atmospheric pressure.

Driving devices such as motors (not shown) of the belt conveyors 50A and 50B, exhaust and gas supply devices 68, 69, 70 and 71A in each chamber, ion beam irradiation devices 56, mounting heads 57, chip reversing collets 59, When a heating device 62 and, if necessary, a shutter for partitioning between adjacent chambers are provided, the opening / closing drive device of the shutter is controlled by a control device 87. Therefore, the belt conveyor 5
The loading and unloading operations of each substrate 2 and each chip tray 55 into and out of each chamber by 0A and 50B, the operations such as independent exhaust and nitrogen gas supply in each of the chambers 51, 52, 81, 53A and 54A, and the mounting Various operations of the head 57 and the chip reversing collet 59, for example, on / off operation and position adjustment operation of a suction circuit for performing suction operation, ultrasonic wave generation operation, parallelism adjustment operation, ion beam irradiation operation of the ion beam irradiation device 56, The heating operation of the heating device 62 is appropriately controlled by the control device 87.

According to the room temperature bonding apparatus having the above configuration,
Room-temperature bonding is performed as follows. The following operations are performed under the control of the control device 87.

First, in an atmosphere of air at atmospheric pressure, the belt
The circuit boards 2 are provided on the conveyors 50A and 50B at predetermined intervals.
, 2 and the chip trays 55,.
In both cases, by driving the belt conveyors 50A and 50B,
The circuit board 2 and the chip tray 55 are in an atmosphere of atmospheric pressure air.
It is carried into the vacuum exchange chamber 51 from the air. Vacuum exchange
Circuit board 2 and chip tray 55
When the is loaded, the atmosphere in the vacuum exchange chamber 51
Is an atmosphere of air at atmospheric pressure. And vacuum
The circuit board 2 and the chip tray 5 are placed in the exchange chamber 51.
5 is carried in, the vacuum exchange chamber 51 is evacuated and exhausted.
And the gas supply device 68 to drive the Ar, N _Two, H_Two, He
The atmosphere of the vacuum exchange chamber 51 by supplying a gas such as
From atmosphere of atmospheric pressure^-7Pa reduction
Replace with an oxygen-free atmosphere under pressure.

Next, when the vacuum exchange chamber 51 becomes an oxygen-free atmosphere under reduced pressure, the circuit board 2 and the chip tray 55 in the vacuum exchange chamber 51 are separated from the vacuum exchange chamber 51 by the belt conveyors 50A and 50B, respectively. It is carried into the adjacent surface treatment chamber 52. A gas such as Ar, N ₂ , H ₂ , He is supplied by the exhaust and gas supply device 69 of the surface treatment chamber 52, and the surface treatment chamber 52 is always under the same reduced pressure as the vacuum exchange chamber 51 under a reduced pressure. It is maintained in an oxygen atmosphere. When the circuit board 2 on the belt conveyor 50A is positioned at a predetermined ion beam irradiation position in the surface treatment chamber 52 by traveling of the belt conveyor 50A, the ion beam is directed toward the surface of each electrode 4 of the circuit board 2 By irradiating the ion beam uniformly from the irradiation device 56 and removing the oxide film and the organic film on the surface of each of the electrodes 4, the surface of each of the electrodes 4 is uniformly activated, and the surface is modified as unstable. Do. At this time,
The traveling of the belt conveyor 50B causes the belt conveyor 50 to move.
, Four IC chips 1,... In the chip tray 55
1 is also located at a predetermined ion beam irradiation position in the surface treatment chamber 52, and the ion beam is irradiated from the ion beam irradiation device 56 toward the surface of each bump 3 of the four IC chips 1,. Even if the surface of each bump 3 is uniformly activated by irradiating a beam and removing the oxide film and the organic film on the surface of each bump 3 to make the surface unstable, the surface modification may be performed. Good. At this time, it is preferable that the inside of the surface treatment chamber 52 is under a reduced pressure of about 10 ⁻⁷ Pa, which is the same as that of the vacuum exchange chamber 51.

Next, when the surface modification of each electrode 4 of the circuit board 2 or the surface modification of each electrode 4 of the circuit board 2 and each bump 3 of each IC chip 1 in the surface treatment chamber 52 is completed, The circuit board 2 and the chip tray 55 are carried into the nitrogen gas exchange chamber 81 from the inside of the surface treatment chamber 52 by the belt conveyors 50A and 50B.
When the circuit board 2 and the chip tray 55 are carried into the nitrogen gas exchange chamber 81, the nitrogen gas exchange chamber 81 is maintained in the same oxygen-free atmosphere under reduced pressure as the surface treatment chamber 52. After the circuit board 2 and the chip tray 55 have been carried into the nitrogen gas exchange chamber 81, the atmosphere in the nitrogen gas exchange chamber 81 is changed to the surface treatment chamber 52 by driving the exhaust and gas supply device 82. The atmosphere is exchanged from an oxygen-free atmosphere under reduced pressure to an oxygen-free nitrogen gas atmosphere at atmospheric pressure.

Next, the nitrogen gas exchange chamber 81
When the inside becomes a nitrogen gas atmosphere of atmospheric pressure, the circuit board 2 and the chip tray 55 in the nitrogen gas exchange chamber 81 are changed.
However, by the belt conveyors 50A and 50B,
It is carried into the adjacent bonding chamber 53A from the nitrogen gas exchange chamber 81. When the circuit board 2 and the chip tray 55 are carried into the bonding chamber 53A, the bonding chamber 53A is evacuated by an exhaust gas and an inert gas supply device 70 under an atmospheric pressure equivalent to that of the nitrogen gas exchange chamber 81. Is maintained in a nitrogen gas atmosphere. After the circuit board 2 and the chip tray 55 are carried into the joining chamber 53A, first, one IC chip 1 is sucked and held from the chip tray 55 by the chip reversing collet 59 and then turned 180 degrees. Next, the mounting head 57 moves to a position above the chip reversing collet 59 and descends, causing the IC chip 1 adsorbed and held by the chip reversing collet 59 to be adsorbed and held on the lower surface of the mounting head 57. Receive 1 Next, after the mounting head 57 moves up to the original position, the mounting head 57 moves to a position above the IC chip bonding area of the substrate 2 and descends to bond the IC chip 1 adsorbed and held against the IC chip bonding area while pressing. Let it. In this bonding operation, it is preferable to perform the same ultrasonic bonding as in the first embodiment while heating the circuit board 2 on the belt conveyor 50A by the heating device 62 disposed below the belt conveyor 50A. Each electrode of each IC chip 1 has bumps 3 formed in advance, and each bump 3
By directly contacting each of the activated electrodes 4 of the chip bonding portion, bonding is performed at room temperature. This fourth
In the embodiment, the circuit board 2 has four IC chip bonding regions. After the IC chips 1 are bonded to the respective IC chip bonding portions, the four IC chips 1,. The bonded body 20 is bonded to the bonding chamber 5.
3A is carried out to the air atmosphere exchange chamber 54A by the belt conveyor 50A.

Next, the air atmosphere exchange chamber 54A
Then, when the bonded body 20 is carried in from the joining chamber 53A by the belt conveyor 50A, and the empty chip tray 55 is carried in from the joining chamber 53A by the belt conveyor 50B, the exhaust and gas supply device 71A is driven to drive the chip tray 55. The oxygen-free nitrogen gas atmosphere under the same atmospheric pressure as that of the surface treatment chamber 52 is replaced with an atmospheric air atmosphere. After the exchange, the atmosphere becomes the atmosphere of the atmospheric pressure, the bonded body 20 is carried out of the air atmosphere exchange chamber 54A by the belt conveyor 50A, and the empty chips are moved out of the air atmosphere exchange chamber 54A by the belt conveyor 50B. The tray 55 is carried out.

According to the fourth embodiment, a number of circuit boards 2,..., And a number of IC chips 1,. Loading / unloading operation, surface modification operation of each electrode 4 of each circuit board 2 or surface modification operation of each electrode 4 of each circuit board 2 and each bump 3 of each IC chip 1, and normal temperature of IC chip 1 Since the joining operation can be performed independently and simultaneously in parallel, the manufacturing efficiency of the joined body can be increased as a whole, and the joined body can be efficiently mass-produced. In addition, since the bonding operation can be performed at a low pressure (for example, 50 g / 100 μm ² in the related art, but in this embodiment, a low pressure of about 1/10 of 5 g / 100 μm ² ), the electrode wiring is fine. The present invention can also be applied to integrated compound semiconductor IC chips and the like. In addition, as a method of handling the IC chip 1, a suction tool is generally used, but this cannot be performed under reduced pressure, and it is necessary to use another means such as chucking. However, since this is likely to cause cracking of the IC chip and the like, it is a difficult means. Therefore, as in the above-described fourth embodiment, the IC chip is prevented from being broken by handling with a suction tool at atmospheric pressure. Is preferred.

(Fifth Embodiment) In each of the above embodiments, the IC chip 2 is lowered downward from above the circuit board 2 during the bonding operation and pressed against the circuit board 2 for bonding. The present invention is not limited to this.
For example, as a room-temperature bonding apparatus and method according to a fifth embodiment of the present invention, as shown in FIG.
The IC chip 1, which has been placed and held on the chip transfer stage 93 and the surface of each of the bumps 3 has been modified, is fixed as an example of the electronic component bonding area of the circuit board 2 as described above. After the IC chip 1 is positioned with respect to the IC chip bonding area, the chip transfer stage 1 may be raised to bond the IC chip 1 to the circuit board 2 at room temperature. That is, in this case, the circuit board 2 is first fixed to the upper surface of the substrate transfer stage 90 with a screw or a chuck 91, and then the substrate transfer stage 90 is turned upside down to join the IC chip bonding portion of the circuit board 2. The electrode surface to be placed is positioned downward. On the other hand, the IC chip 1 is placed and held on the chip transfer stage 93. By setting the size of the chip transfer stage 93 to be equal to or smaller than that of the IC chip 1, when there are a plurality of IC chip joints on the circuit board 2 as shown in FIG. The IC chips 1, 1 can be placed and held on the plurality of chip transfer stages 90, 90, respectively, and can be simultaneously joined.

In general, it is difficult to hold the IC chip 1 by suction under reduced pressure, but according to the fifth embodiment,
As described above, by mounting and holding the IC chip 1 on the chip transfer stage 93 without sucking the IC chip 1,
Since the chip 1 can be held and the IC chip 1 can be easily handled, the bonding operation can be performed more accurately and efficiently. Further, since the bonding operation can be performed at low pressure, the present invention can be applied to a compound semiconductor IC chip or the like in which electrode wiring is miniaturized.

(Sixth Embodiment) A room-temperature bonding apparatus and method according to a sixth embodiment of the present invention include an IC chip 1 and a substrate 2
And particularly corresponds to a modification of the first embodiment. That is, as shown in FIGS. 8 and 9, the substrate 2 is placed on the base 104 fixed to the lower side, and the columns 10 extending upward from the base 104 are arranged.
An IC chip and a substrate holding device 106 on which a movable portion 105 supported up and down with respect to the column 103 is disposed at the upper end of 3 are prepared. An X-direction adjusting member 1 such as a micrometer, which holds the IC chip 1 by suction or a chuck and can adjust the position in the X direction orthogonal to the vertical direction, is provided on the movable portion 105 of the substrate holding device 106.
01X and a Y-direction adjusting member 101Y, such as a micrometer, capable of adjusting the position in the vertical direction and the Y direction orthogonal to the X direction, so that the position can be adjusted in the XY directions.

This IC chip and substrate holding device 106
Under atmospheric pressure is placed on an alignment (positioning) check stage 102 as an example of a positioning device.
The alignment confirmation stage 102 includes an alignment confirmation camera 100 that enters the space between the IC chip 1 and the substrate 2 of the IC chip and the substrate holding device 106, and the alignment confirmation camera 100 moves the position of the IC chip 1 and the substrate 2. Are recognized, the position is adjusted in the X and Y directions by the X direction adjusting member 101X and the Y direction adjusting member 101Y. This position adjustment may be performed manually, or an image processing may be performed by a control device based on the data recognized by the alignment confirmation camera 100 to obtain a position correction amount in the XY directions, and then the X direction adjustment member may be used. The position adjustment may be performed automatically by driving the 101X and Y direction adjustment members 101Y to rotate forward and reverse with separate motors.

In this manner, the position of the IC chip 1 and the substrate 2 in the IC chip and substrate holding device 106 is adjusted using the alignment confirmation stage 102 under the atmospheric pressure, and as shown in FIG. Next, the IC chip and the substrate holding device 106 are placed and held on the heat stage 13 in the decompression chamber 6 of the first embodiment. When the bonding operation is performed under reduced pressure, the pressing mechanism 110 is driven while detecting the load with the load cell 111 to lower the movable portion 105 of the IC chip and the substrate holding device 106, and The held IC chip 1 is bonded to the substrate 2 by pressing.

According to the sixth embodiment, I
After the position adjustment between the C chip 1 and the substrate 2, it can be carried into the decompression chamber while the position is adjusted, and the position adjustment can be performed during the bonding operation after the electrode surface modification in the decompression chamber. This is unnecessary, and the joining operation can be performed with the position adjusted more accurately and reliably.

(Seventh Embodiment) In each of the above embodiments, the ultrasonic bonding was performed when bonding the IC chip 1 to the substrate 2, but the bonding method is not limited to this. For example, as shown in FIG. 10, the room-temperature bonding apparatus and method according to the seventh embodiment of the present invention perform bonding by interposing a bonding material 121 between each bump 3 of the IC chip 1 and the electrode 4 of the substrate 2. Is what you do. As an example,
The first embodiment will be described.
A case where the IC chip 1 is mounted on the substrate 4 using a bonding material 121 such as solder or a conductive adhesive will be described.

First, the atmosphere is evacuated in the closed decompression chamber 13 to lower the oxygen concentration, and the surface of the electrode is modified to activate the connection portion. After positioning the bump 3 and the connection electrode 4 on the substrate 2 to which the bonding material 121 has been supplied in advance,
Bonding while heating from the substrate side. Then, by heating from the substrate side, when the bonding material 121 is a solder, it is melt-bonded, and when the bonding material 121 is a conductive adhesive, it is thermoset,
The bumps 3 of the IC chip 1 and the electrodes 4 of the substrate 2 are joined and fixed in a conductive state.

As described above, according to the seventh embodiment, I
Oxidation of the electrode surface progresses at the time of bonding of the bumps 3 of the C chip 1 or the electrodes 4 of the substrate 2 due to the influence of oxygen in the atmosphere, or the adhesion is inhibited by the attachment of organic substances such as carbon in the atmosphere, and the bonding between the electrodes is prevented. Can be prevented from becoming defective. Conventionally, it could not be joined without melting (A
In the case of u-Sn, Au-Al, Au-Cu, etc., a diffusion layer is formed between the metals, and the expansion of the diffusion layer causes a reduction in the bonding reliability in a high-temperature storage test. . By providing the bonding material 121 as a substance having good plastic deformation and good bonding properties in the middle, more stable and reliable bonding can be obtained in room temperature bonding using the bonding material 121.

(Eighth Embodiment) A room-temperature bonding apparatus and method according to an eighth embodiment of the present invention are described below.
In this embodiment, a chip capacitor instead of the C chip 1 is bonded to the substrate 2 by a different bonding method. As shown in FIG. 11, as an example, the first embodiment will be described.
The case of mounting using a bonding material 123 such as solder or conductive adhesive will be described.

First, the atmosphere is evacuated in the closed decompression chamber 13 to lower the oxygen concentration, and the surface of the electrode is modified to activate the connection portion. After the alignment with the connection electrode 4 on the substrate 2 to which the bonding material 123 is supplied in advance, the bonding is performed while heating from the substrate side. Thereafter, by heating from the substrate side, fusion bonding is performed when the bonding material 123 is a solder, and thermosetting when the bonding material 123 is a conductive adhesive, and each electrode 120 of the chip capacitor 124 and each electrode 4 of the substrate 2 are heated. Are fixed in a conductive state.

As described above, according to the eighth embodiment, the electrodes 120 of the chip capacitor 124 or the electrodes 4 of the substrate 2 are oxidized at the time of bonding due to the influence of atmospheric oxygen, Can be prevented from being hindered by adhesion of an organic substance such as carbon to cause poor conduction between the electrodes. In this way, when the room temperature bonding is applied to the chip capacitor instead of the IC chip, and the IC and the chip capacitor are mixedly mounted, the same mounting method is used.
Efficient manufacturing is possible, that is, simplification of the process can realize cost reduction.

The present invention is not limited to the above embodiment, but can be implemented in other various modes.

For example, in the above embodiments, an IC chip is described as an example of an electronic component. However, the present invention is not limited to this, and can be applied to a chip capacitor and the like.

In each of the embodiments described above, only the electrodes 4 of the circuit board 2 are surface-modified. However, both the electrodes 4 of the circuit board 2 and the bumps 3 of the IC chip 1 May be surface-modified, or only the bumps 3 of the IC chip 1 may be surface-modified.

[0128] If necessary, a shutter for partitioning between adjacent chambers may be provided.

In each of the above embodiments, a plating bump such as Au plating may be used as the bump 3 of the IC chip 1 and mounted using ultrasonic energy. Also, each bump may be leveled to a certain height and then joined to the substrate.

The electrode as an example of the electrical connection of the electronic component or the electrode as an example of the electrical connection of the circuit forming body may be made of any of Au, Cu, Al, In, and Sn. It may be configured.

The electronic components to which the present invention can be applied include, in addition to IC chips, SAW filters, crystal oscillators, GaAs chips, and other electronic components.

It is to be noted that, by appropriately combining any of the above-described various embodiments, the effects of the respective embodiments can be exhibited.

[0133]

According to the present invention, the inside of the sealed chamber is decompressed, and the oxygen concentration is reduced to, for example, about 1% or less to make the chamber substantially oxygen-free or oxygen-free, thereby providing electrical connection during bonding. The electric connection part of the electronic component and the electric connection part of the circuit forming body are located in an atmosphere where the oxidation of the connection part does not proceed, and the surface of one of the electric connection parts is activated by an energy wave. With the use of the activated electrical connection portion, it is possible to mass-produce a joined body in which the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body are joined at room temperature using the activated electrical connection portion, It is possible to mass-produce a joined body that is joined at room temperature efficiently and with good joining quality. That is, the circuit forming body or the electronic component is automatically carried in and placed in the connection portion oxidation preventing atmosphere for activating the connection portion, and the connection portion is activated in the connection portion oxidation preventing atmosphere. After performing the normal-temperature bonding between the electronic component and the circuit forming body using the activated electrical connection portion in the oxidation preventing atmosphere after the connection portion, Because
The activation of the connection portion and the normal temperature bonding can be performed continuously, and a bonded body of stable quality can be mass-produced.

Further, since the bonding operation can be performed at a low pressure during the room temperature bonding, the present invention can be applied to a compound semiconductor IC chip having a fine electrode wiring as an example of the electrical connection portion.

Further, a plurality of circuit forming bodies or a plurality of electronic components, or a plurality of circuit forming bodies and a plurality of electronic components are continuously carried into and out of the atmosphere by the belt conveyor. The surface activation operation of each electrical connection portion of the electronic component or each circuit forming body and the room temperature bonding operation of each electronic component and each circuit forming body under reduced pressure or atmospheric pressure are independently and simultaneously performed in parallel. In this case, the manufacturing efficiency of the joined body can be improved as a whole, and the joined body can be efficiently mass-produced.

In general, it is difficult to suck and hold an electronic component under reduced pressure. However, the electronic component bonding region of the circuit formed body is held downward and the electronic component is turned upward and the electronic component of the circuit formed body is turned upward. When the electronic components are joined by pressing and contacting the component joining area, the electronic components need only be placed and held on, for example, a chip transfer stage without being sucked. Therefore, the electronic component can be easily held, the electronic component can be easily handled, and the joining operation can be performed more accurately and efficiently.

After the electrical connection of the electronic component and the electrical connection of the circuit forming body are aligned under atmospheric pressure, the electrical connection of the electronic component and the circuit When the electronic component and the circuit forming body are positioned in the connection part oxidation preventing atmosphere in a state where the electric connection part of the formed body is aligned with the electric connection part, the surface of the electric connection part in a reduced pressure atmosphere Position adjustment is not required at the time of the joining operation after activation, and the joining operation can be performed with the position adjusted more accurately and reliably.

[Brief description of the drawings]

FIG. 1 is a schematic explanatory view of a room-temperature bonding apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic explanatory view of a room temperature bonding apparatus according to a second embodiment of the present invention as viewed from the front.

FIGS. 3A and 3B are a schematic explanatory view of a room-temperature bonding apparatus according to a third embodiment of the present invention as viewed from the front and a schematic explanatory view of a bonding chamber as viewed from a side surface on an unloading side, respectively.

FIG. 4 is a schematic explanatory view of a room temperature bonding apparatus according to the third embodiment as viewed from above.

FIGS. 5A and 5B are a schematic explanatory view of a room-temperature bonding apparatus according to a fourth embodiment of the present invention as viewed from the front and a schematic explanatory view of a bonding chamber as viewed from the side of a carry-out side, respectively.

FIG. 6 is a schematic explanatory view of a room-temperature bonding apparatus according to the fourth embodiment as viewed from above.

FIG. 7 is an explanatory diagram showing a holding relationship between an IC chip and a substrate during a bonding operation of a room-temperature bonding apparatus according to a fifth embodiment of the present invention.

FIG. 8 is an explanatory view showing an alignment operation between an IC chip and a substrate of a room-temperature bonding apparatus according to a sixth embodiment of the present invention.

FIG. 9 is an explanatory diagram showing a bonding operation after an IC chip and a substrate are placed in a reduced-pressure chamber in a state where they are aligned in the room-temperature bonding apparatus according to the sixth embodiment.

FIG. 10 is an explanatory view showing a bonding operation between an IC chip and a substrate of a room-temperature bonding apparatus according to a seventh embodiment of the present invention.

FIG. 11 is an explanatory diagram showing a bonding operation between an IC chip and a substrate of a room-temperature bonding apparatus according to an eighth embodiment of the present invention.

FIG. 12A is an explanatory view showing a state in which an IC chip is mounted on a substrate via a bonding material in a conventional flip chip mounting, and FIG. FIG. 4 is an explanatory diagram showing a state in which a chip is mounted on a substrate, and FIG. 4C is an explanatory diagram showing a state in which a chip component is mounted on the substrate.

FIG. 13 is an explanatory diagram showing a state in which an oxide film, an organic film, and the like are formed on the surface of a metal crystal of each electrode of an electronic component or a circuit board.

FIG. 14 is an explanatory view showing a state where the oxide film and the organic film of FIG. 13 are activated by being removed by argon ions.

FIG. 15 is an explanatory view showing a state in which an electrode surface activated at room temperature is brought into direct contact with an electrode surface to be joined under a low pressure.

FIG. 16 is an explanatory view showing a state where atoms are bonded between contacted electrode surfaces.

FIG. 17 is an explanatory view of the mounting of the multi-chip module in the fifth embodiment, that is, a state in which a plurality of IC chips are respectively mounted and held on a plurality of chip transfer stages and are simultaneously bonded.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... IC chip, 2 ... Circuit board, 3 ... Bump, 4 ... Electrode, 5 ... Carrier, 5A ... IC chip carrier, 5B ...
Substrate transfer device, 6: decompression chamber, 7: connection unit activation device, 7a: energy wave irradiation unit, 7b: drive device, 8
... joining device, 8a ... fixed portion, 8b ... movable portion, 8c ... guide rod, 8d ... drive device, 9 ... exhaust device, 10 ... inert gas supply device, 11 ... exhaust port, 12 ... air supply port, 13 ... Heat stage, 14: chip suction holding and ultrasonic applying device, 15: position adjusting device, 21: suction nozzle section, 22 ...
Ultrasonic wave generator, 29: control device, 30: belt conveyor, 30A: drive device, 31: oxygen-free atmosphere exchange chamber, 32: surface treatment chamber, 33: inert gas atmosphere exchange chamber, 34: joining chamber, 35 ... Ion beam irradiation device, 36: adsorption bonding device, 37: control device, 38: exhaust and gas supply device of oxygen-free atmosphere exchange chamber, 39: exhaust and gas supply device of surface treatment chamber, 40: inert gas atmosphere exchange chamber 41: Exhaust and inert gas supply device for bonding chamber, 42: Heating device, 50A: Belt conveyor on substrate side, 50B: Belt conveyor on IC chip side, 51: Vacuum exchange chamber, 52 ... Surface treatment chamber, 53, 53A: bonding chamber, 54: atmospheric pressure exchange chamber, 5 A ... air atmosphere exchange chamber,
55: chip tray, 56: ion beam irradiation device, 5
7, mounting head, 58, guide rail, 59, chip reversing collet, 62, heating device, 67, control device, 68, exhaust and gas supply device for vacuum exchange chamber, 69, exhaust and gas supply device for surface treatment chamber, 70 ... Exhaust and gas supply device for bonding chamber, 71 ... Exhaust and gas supply device for inert gas atmosphere exchange chamber, 7
1A: Exhaust and gas supply device of air atmosphere exchange chamber, 81: Nitrogen gas exchange chamber, 82: Exhaust and inert gas supply device of nitrogen gas chamber, 87: Control device, 90: Substrate transfer stage, 91: Screw or chuck , 93: chip transfer stage, 100: alignment confirmation camera, 101X: X-direction adjusting member, 101Y: Y
Direction adjustment member, 102: alignment check stage, 1
03 ... post, 104 ... base, 105 ... movable part, 106 ...
IC chip and substrate holding device, 110 ... pressing mechanism, 11
DESCRIPTION OF SYMBOLS 1 ... Load cell, 120 ... Electrode, 121 ... Bonding material, 1
23: bonding material, 124: chip capacitor.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kazuyuki Tomita 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F-term (reference) 3B116 AA46 AB42 BC01 5E319 AA03 AB05 AC17 BB09 BB10 CC46 CD04

Claims (31)

[Claims] An atmosphere for preventing oxidation of a connection portion for preventing oxidation of an electrical connection portion of a circuit forming body to be joined or an electrical connection portion of an electronic component. A transport device (5, 5A, 5B, 30, 50A, 5) for loading and unloading the circuit forming body or the electronic component with respect to (6).
0B) and / or at least one of the electrical connection part of the electronic component and the electrical connection part of the circuit forming body to be connected to the electrical connection part in the oxidation prevention atmosphere chamber. A connection activating device (7, 35, 56) for activating the surface by an energy wave; and thereafter, bonding the electronic component and the circuit forming body at room temperature in an atmosphere for preventing the connection from oxidizing to form the electronic component. A bonding device (8, 36, 57) for electrically connecting the electrical connection portion of (1) and the electrical connection portion of the circuit forming body. 2. The room temperature bonding apparatus according to claim 1, wherein the connection portion oxidation preventing atmosphere is an oxygen-free atmosphere. 3. The joining device joins the electronic component and the circuit forming body at room temperature in an atmosphere where the connection is oxidized under atmospheric pressure, and connects the electrical connection of the electronic component to the circuit. The room-temperature bonding apparatus according to claim 1 or 2, wherein an electrical connection portion of the formed body is electrically connected. 4. An oxygen-free atmosphere exchange chamber (31) for replacing the circuit-formed body or the electronic component by the transfer device with an oxygen-free atmosphere under reduced pressure after the transfer unit has carried in the atmosphere. A connection part activation chamber (32) that is arranged following the oxygen-free atmosphere exchange chamber and that is an oxygen-free atmosphere that is the connection part oxidation-preventing atmosphere under reduced pressure and that includes the connection part activation device; Placed following the connection activation chamber, and
An inert gas atmosphere exchange chamber (33) for exchanging the above-described oxygen-free atmosphere under reduced pressure with an inert gas atmosphere at atmospheric pressure.
And a joining chamber (3) of an inert gas atmosphere which is arranged following the inert gas atmosphere exchange chamber and which is the connection part oxidation preventing atmosphere in which the joining device is arranged.
The room-temperature bonding apparatus according to claim 1, further comprising: (4). 5. An oxygen-free atmosphere exchange chamber (51) for replacing the circuit-forming body or the electronic component by the transfer device with an oxygen-free atmosphere under reduced pressure after the transfer unit carries the circuit-formed body or the electronic component; A connection part activation chamber (52) that is disposed following the oxygen-free atmosphere exchange chamber and that is an oxygen-free atmosphere that is the connection part oxidation-preventing atmosphere under reduced pressure and that includes the connection part activation device; Placed following the connection activation chamber, and
A joining chamber (53) in which the joining device is arranged, the joining chamber being placed in an oxygen-free atmosphere that is the oxidation preventing atmosphere of the connection portion under the reduced pressure, and a joining chamber arranged next to the joining chamber; The room-temperature bonding apparatus according to claim 1, further comprising an atmospheric pressure exchange chamber (54) for exchanging the oxygen-free atmosphere with atmospheric pressure. 6. An oxygen-free atmosphere exchange chamber (51) for replacing the circuit-forming body or the electronic component with the oxygen-free atmosphere under reduced pressure after the transfer device has carried in the circuit-formed body or the electronic component, A connection part activation chamber (52) that is disposed following the oxygen-free atmosphere exchange chamber and that is an oxygen-free atmosphere that is the connection part oxidation-preventing atmosphere under reduced pressure and that includes the connection part activation device; Placed following the connection activation chamber, and
An inert gas exchange chamber (81) for exchanging the oxygen-free atmosphere under reduced pressure with an inert gas atmosphere at atmospheric pressure; and an oxidation chamber connected to the inert gas exchange chamber and oxidized at the atmospheric pressure. The inert gas atmosphere, which is a prevention atmosphere, is maintained, and a bonding chamber (53A) in which the bonding apparatus is disposed, and an inert gas atmosphere at the atmospheric pressure, which is disposed subsequent to the bonding chamber and has the atmospheric pressure, are expanded. The room-temperature bonding apparatus according to claim 1, further comprising an air atmosphere exchange chamber (54A) for exchanging the air atmosphere with the atmospheric pressure. 7. The belt conveyor according to claim 1, wherein the transfer device is a belt conveyor that mounts and transfers a plurality of the circuit forming bodies to the connection portion oxidation preventing atmosphere chamber. Room temperature bonding equipment. 8. The belt conveyor for mounting and transporting a plurality of the circuit forming bodies on the connecting portion oxidation preventing atmosphere chamber and the belt conveyor for mounting and transporting a plurality of the electronic components. Claims 1 to 6
The room-temperature bonding apparatus according to any one of the above. 9. The connecting part activating device according to claim 1, wherein said connecting part activating device includes a connecting part oxidizing atmosphere chamber having at least one of a surface of an electrical connecting part of said electronic component and a part of an electrical connecting part of said circuit forming body. The room-temperature bonding apparatus according to any one of claims 1 to 8, wherein the oxide or the organic substance is activated by removing it by a laser beam, an energy beam, or plasma as an energy wave. 10. The electric connection part of the electronic component or the electric connection part of the circuit forming body is made of Au, Cu, A
2. The semiconductor device according to claim 1, which is composed of any one of l, In, and Sn.
10. The room-temperature bonding apparatus according to any one of items 9 to 9. 11. The room temperature bonding apparatus according to claim 1, wherein the bonding apparatus holds the electronic component and presses and contacts the electronic component on the circuit forming body to bond the electronic component. 12. The bonding apparatus according to claim 1, wherein the electronic component bonding area of the circuit forming body is held downward, and the electronic component is pressed upwardly into contact with the electronic component bonding area of the circuit forming body to perform bonding. The room-temperature bonding apparatus according to any one of 1 to 10. 13. An alignment device (102) for aligning the electrical connection portion of the electronic component with the electrical connection portion of the circuit forming body, wherein the alignment device performs the adjustment under atmospheric pressure. With the electrical connection of the electronic component and the electrical connection of the circuit forming body being aligned in advance, the electronic component and the circuit forming body are loaded into the oxidation prevention atmosphere chamber at the connection. The room temperature bonding apparatus according to any one of claims 1 to 3, wherein the room temperature bonding apparatus is used. 14. The bonding apparatus according to claim 1, wherein the bonding apparatus applies ultrasonic waves at room temperature when electrically connecting the electrical connection of the electronic component and the electrical connection of the circuit forming body.
3. The room-temperature bonding apparatus according to any one of 3. 15. The bonding device has a bonding material (121, 123) interposed therebetween when electrically connecting the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body at normal temperature. 14. Any one of claims 1 to 13 which is joined in a state.
The room-temperature bonding apparatus according to any one of the first to third aspects. 16. A connection part oxidation preventing atmosphere for preventing oxidation of an electric connection part (4) of a circuit forming body (2) to be joined or an electric connection part (3) of an electronic component (1, 121). The circuit forming body or the electronic component is located, and the electrical connecting portion of the electronic component and the electrical connecting portion of the circuit forming body to be connected to the electrical connecting portion in the oxidation preventing atmosphere of the connecting portion. Activating at least one of the surfaces by an energy wave, and then bonding the electronic component and the circuit forming body at room temperature in an atmosphere for preventing oxidation of the connection portion, and connecting the electrical connection portion of the electronic component to the electrical connection portion. A room-temperature bonding method, wherein an electrical connection portion of a circuit forming body is electrically connected. 17. The room temperature bonding method according to claim 16, wherein the connection portion oxidation preventing atmosphere is an oxygen-free atmosphere. 18. When joining the electrical connection of the electronic component and the electrical connection of the circuit forming body, the electronic component and the circuit forming body are placed in an atmosphere for preventing the connection from being oxidized under atmospheric pressure. 18. The room temperature bonding method according to claim 16 or 17, wherein the bonding is performed at room temperature to electrically connect an electrical connection portion of the electronic component and an electrical connection portion of the circuit forming body. 19. When the circuit forming body or the electronic component is positioned in the connection portion oxidation preventing atmosphere, the circuit forming body or the electronic component is carried into an oxygen-free atmosphere exchange chamber (31) and then subjected to a reduced pressure. The connection is performed by replacing the oxygen-free atmosphere with an oxygen-free atmosphere. After the above-mentioned activation and before the above-mentioned bonding, the oxygen-free atmosphere under the reduced pressure is reduced to the atmospheric pressure in the inert gas atmosphere exchange chamber (33) arranged subsequent to the connection part activation chamber. 17. The method according to claim 16, wherein the bonding is performed in a bonding chamber (34) disposed after the inert gas atmosphere exchange chamber after exchanging with an inert gas atmosphere. The room temperature bonding method described. 20. When the circuit forming body or the electronic component is positioned in the connection part oxidation preventing atmosphere, the circuit forming body or the electronic component is transported into an oxygen-free atmosphere exchange chamber (51) and then under a reduced pressure. The connection is exchanged with an oxygen-free atmosphere, and the connection is activated in an oxygen-free atmosphere, which is an antioxidant atmosphere of the connection under a reduced pressure in a connection activation chamber (52) disposed following the oxygen-free atmosphere exchange chamber. After the activation and before the bonding, the bonding is performed in an oxygen-free atmosphere that is the oxidation preventing atmosphere of the connection under the reduced pressure in the bonding chamber (53) disposed subsequent to the connection activation chamber. 17. The method according to claim 16, wherein the oxygen-free atmosphere under reduced pressure is exchanged with an atmospheric pressure in an atmospheric pressure exchange chamber (54) disposed subsequent to the bonding chamber. The room temperature bonding method described. 21. When the circuit forming body or the electronic component is placed in the connecting portion oxidation preventing atmosphere, the circuit forming body or the electronic component is carried into an oxygen-free atmosphere exchange chamber (51) and then subjected to a reduced pressure. The connection is exchanged with an oxygen-free atmosphere, and the connection is activated in an oxygen-free atmosphere, which is an antioxidant atmosphere of the connection under a reduced pressure in a connection activation chamber (52) disposed following the oxygen-free atmosphere exchange chamber. In the inert gas exchange chamber (81) arranged following the connection section activation chamber, the oxygen-free atmosphere under the reduced pressure is exchanged with an inert gas atmosphere that is the connection section oxidation prevention atmosphere at atmospheric pressure. In the bonding chamber (53A) disposed subsequent to the inert gas exchange chamber, the connection portion at the atmospheric pressure is connected in an inert gas atmosphere which is an antioxidant atmosphere. The bonding is performed, and the inert gas atmosphere at the atmospheric pressure is exchanged with the air atmosphere at the atmospheric pressure in the air atmosphere exchange chamber (54A) disposed subsequent to the bonding chamber.
The room temperature bonding method described in 1. 22. The plurality of circuit forming bodies are continuously positioned in the connection portion oxidation preventing atmosphere by a belt conveyor on which a plurality of the circuit forming bodies are placed.
The room temperature bonding method according to any one of the first to third aspects. 23. A plurality of circuit forming bodies and the plurality of electronic components are continuously connected by a belt conveyor on which the plurality of circuit forming bodies are mounted and a belt conveyor on which the plurality of electronic components are mounted and transported. The room-temperature bonding method according to any one of claims 16 to 21, wherein the connection portion is located in the oxidation preventing atmosphere. 24. The activation of the connection portion, wherein at least one of the surface of the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body is activated in the oxidation preventing atmosphere of the connection portion. The room-temperature bonding method according to any one of claims 16 to 23, wherein the oxide or the organic substance is activated by removing it with a laser beam, an energy beam, or plasma as an energy wave. 25. The electric connection part of the electronic component or the electric connection part of the circuit forming body is made of Au, Cu, A
2. The semiconductor device according to claim 1, which is composed of any one of l, In, and Sn.
The room-temperature bonding method according to any one of 6 to 24. 26. The bonding according to claim 1, wherein the bonding is performed by holding the electronic component and pressing and contacting the electronic component on the circuit forming body.
26. The room temperature bonding method according to any one of 6 to 25. 27. The bonding according to claim 16, wherein the electronic component bonding area of the circuit forming body is held downward, and the electronic component is pressed upwardly into contact with the electronic component bonding area of the circuit forming body to perform bonding. The room-temperature bonding method according to any one of Items 25 to 25. 28. After aligning the electrical connection portion of the electronic component with the electrical connection portion of the circuit forming body under atmospheric pressure, the electrical connection portion of the electronic component and the circuit 17. The electronic device according to claim 16, wherein the electronic component and the circuit forming body are positioned in the oxidation preventing atmosphere in a state where the electrical connection portions of the formed body are aligned with each other.
The room-temperature bonding method according to any one of Items 1 to 18. 29. The bonding device according to claim 16, wherein an ultrasonic wave is applied at room temperature to electrically connect the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body.
The room temperature bonding method according to any one of the above. 30. A state in which the bonding material (121, 123) is interposed when the electrical connection portion of the electronic component and the electrical connection portion of the circuit forming body are electrically connected at room temperature at normal temperature. The room-temperature bonding method according to any one of claims 16 to 28, wherein the bonding is performed by: 31. A bonded body formed by bonding the electronic component to the circuit forming body at a room temperature by the room temperature bonding method according to any one of claims 16 to 30.