JP2002050751A - Cover glass for solid-state imaging device - Google Patents
Cover glass for solid-state imaging deviceInfo
- Publication number
- JP2002050751A JP2002050751A JP2000235693A JP2000235693A JP2002050751A JP 2002050751 A JP2002050751 A JP 2002050751A JP 2000235693 A JP2000235693 A JP 2000235693A JP 2000235693 A JP2000235693 A JP 2000235693A JP 2002050751 A JP2002050751 A JP 2002050751A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- cover glass
- imaging device
- state imaging
- cutoff filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像素子用カ
バーガラスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cover glass for a solid-state imaging device.
【０００２】[0002]
【従来の技術】一般に、ＣＣＤやＣ−ＭＯＳ等の固体撮
像素子は、可視光域のみに感度を有する人間の目と異な
り近赤外域にまで感度を有しており、固体撮像素子を使
用したカメラ等には色再現性を改善するため視感度補正
用の赤外光を遮断する手段が施される。このような赤外
光の遮断は、燐酸系ガラスを代表とする赤外線吸収ガラ
スを光学系の光路中に挿入するか、または同様に光路中
に挿入する水晶板等からなるローパスフィルタの表面に
赤外線遮断機能を有する膜を設けることによりなされて
いる。2. Description of the Related Art In general, a solid-state imaging device such as a CCD or a C-MOS has a sensitivity up to the near-infrared region unlike a human eye having sensitivity only in a visible light region. In order to improve color reproducibility, cameras and the like are provided with means for blocking infrared light for correcting visibility. Such infrared light can be blocked by inserting an infrared absorbing glass represented by a phosphoric acid glass into the optical path of the optical system, or by similarly applying an infrared ray to the surface of a low-pass filter made of a quartz plate or the like inserted into the optical path. This is achieved by providing a film having a blocking function.
【０００３】また、近年、ビデオカメラやデジタルスチ
ルカメラの小型化が進められてきており、部品点数の削
減や薄型化等のため固体撮像素子のカバーガラスに直接
赤外線遮断機能を有する薄膜を設けることが提案されて
いる。In recent years, miniaturization of video cameras and digital still cameras has been promoted, and a thin film having an infrared shielding function is directly provided on a cover glass of a solid-state image sensor in order to reduce the number of parts and make the camera thinner. Has been proposed.
【０００４】一方、固体撮像素子用カバーガラスは、固
体撮像素子が収納されたセラミックスあるいはプラスチ
ックスからなるパッケージに接着剤により気密封止され
るが、硬化時間の短縮を目的として紫外線硬化型の接着
剤が使用されるようになってきている。On the other hand, a cover glass for a solid-state imaging device is hermetically sealed with an adhesive in a package made of ceramics or plastics containing the solid-state imaging device. Agents are being used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、一般に
使用されている赤外線遮断フィルタは、ＳｉＯ2層とＴ
ｉＯ2層とが交互に積層された構造であり、ＴｉＯ2層の
光吸収特性により３８０ｎｍよりも短い波長の光透過率
がほとんどなく、また紫外線硬化型の接着剤は約３５０
ｎｍの波長の紫外線により硬化するようになっているの
で、固体撮像素子用カバーガラスをパッケージに気密封
止する際には熱硬化型の接着剤を使用することになり接
着剤の硬化に長時間を要し、固体撮像素子の組み立て工
程の能力が低下する問題がある。However, a commonly used infrared cutoff filter is composed of a SiO 2 layer and a T
It has a structure in which iO 2 layers are alternately laminated, has almost no light transmittance at a wavelength shorter than 380 nm due to the light absorption characteristics of the TiO 2 layer, and has an ultraviolet curable adhesive of about 350
Since it is designed to be cured by ultraviolet light having a wavelength of nm, when a cover glass for a solid-state imaging device is hermetically sealed in a package, a thermosetting adhesive is used, and it takes a long time to cure the adhesive. Therefore, there is a problem that the capability of the assembly process of the solid-state imaging device is reduced.
【０００６】また、図３に示すように、パッケージ３の
嵌入部４に嵌入した固体撮像素子用カバーガラス１の接
着剤５と接する固定領域だけ赤外線遮断フィルタ２を除
去しようとすると、成膜時のマスクが影響して所望のフ
ィルタ特性が得られなかったり、製造工程が多くなって
コストが高くなる問題がある。As shown in FIG. 3, if the infrared cutoff filter 2 is to be removed only in a fixed region of the cover glass 1 for a solid-state image sensor fitted into the fitting portion 4 of the package 3 and in contact with the adhesive 5, the However, there is a problem that desired filter characteristics cannot be obtained due to the influence of the mask described above, and the number of manufacturing steps increases and the cost increases.
【０００７】本発明は、上記のような従来の問題点を解
決した固体撮像素子用カバーガラスを提供することを目
的とする。An object of the present invention is to provide a cover glass for a solid-state imaging device which solves the above-mentioned conventional problems.
【０００８】[0008]
【課題を解決するための手段】本発明に係る固体撮像素
子用カバーガラスは、光透過表面に多層構造の赤外線遮
断フィルタを備え、波長約３５０ｎｍの紫外線の光透過
率が５０％以上であることを特徴とする。A cover glass for a solid-state imaging device according to the present invention is provided with a multilayer structure of an infrared cutoff filter on a light transmitting surface, and has a light transmittance of 50% or more for ultraviolet light having a wavelength of about 350 nm. It is characterized by.
【０００９】固体撮像素子用カバーガラスの波長約３５
０ｎｍの光透過率と固体撮像素子の気密封止に用いる紫
外線硬化型の接着剤の硬化速度には相関関係がある。一
方、波長約３５０ｎｍの光透過率が低くても紫外線の照
射時間を長くすれば所定の硬化物特性を得ることができ
るが、透過率が５０％を下回ると光透過率が９０％の場
合と同等の硬化物特性を得るためには２倍以上の時間を
必要とするので実用的でない。他方、波長約３５０ｎｍ
の光透過率が５０％以上であると、赤外線遮断フィルタ
等を備えていない従来の固体撮像素子用カバーガラスと
ほぼ同じ短時間で紫外線硬化型の接着剤を硬化させるこ
とができる。The wavelength of the cover glass for a solid-state image sensor is about 35.
There is a correlation between the light transmittance of 0 nm and the curing speed of the ultraviolet curable adhesive used for hermetic sealing of the solid-state imaging device. On the other hand, even if the light transmittance at a wavelength of about 350 nm is low, a given cured product characteristic can be obtained by lengthening the irradiation time of the ultraviolet light. However, if the light transmittance is less than 50%, the light transmittance is 90%. It is not practical because it takes twice or more times to obtain the same cured product characteristics. On the other hand, a wavelength of about 350 nm
When the light transmittance is 50% or more, the ultraviolet-curable adhesive can be cured in about the same short time as a conventional cover glass for a solid-state imaging device without an infrared cutoff filter or the like.
【００１０】また、本発明の固体撮像素子用カバーガラ
スは、赤外線遮断フィルタがＳｉＯ 2層とＴａ2Ｏ5層と
を交互に積層した多層膜により構成されていることを特
徴とする。Also, a cover glass for a solid-state imaging device according to the present invention.
The infrared cutoff filter is SiO TwoLayer and TaTwoOFiveLayers and
Is composed of a multilayer film in which
Sign.
【００１１】また、本発明の固体撮像素子用カバーガラ
スは、赤外線遮断フィルタを一方の光透過表面の全面に
設けたことを特徴とする。The cover glass for a solid-state imaging device according to the present invention is characterized in that an infrared cutoff filter is provided on the entire surface of one of the light transmitting surfaces.
【００１２】さらに、本発明の固体撮像素子用カバーガ
ラスは、波長４００〜６００ｎｍの範囲の光透過率が平
均９０％以上であることを特徴とする。ここで、光透過
率が平均９０％以上とは、４００〜６００ｎｍの可視光
の波長域で９０％を超える光透過率曲線の偏差の合計
（グラフ上では面積）が９０％を下回る偏差の合計を上
回ることをいう。Further, the cover glass for a solid-state imaging device according to the present invention is characterized in that the light transmittance in the wavelength range of 400 to 600 nm is 90% or more on average. Here, the light transmittance of 90% or more on average is defined as the sum of deviations (areas on the graph) of light transmittance curves exceeding 90% in the wavelength region of visible light of 400 to 600 nm being less than 90%. Means to exceed
【００１３】本発明の固体撮像素子用カバーガラスを構
成する材料としては、ホウ珪酸ガラスの他、無アルカリ
ガラス等が使用可能である。材料の膨張係数は、固体撮
像素子のパッケージに近いものであることが温度変化に
起因する応力の発生を抑制することができて好ましい。As a material for forming the cover glass for a solid-state imaging device of the present invention, non-alkali glass and the like can be used in addition to borosilicate glass. It is preferable that the expansion coefficient of the material is close to that of the package of the solid-state imaging device because the generation of stress due to a temperature change can be suppressed.
【００１４】また、赤外線遮断フィルタとしては、波長
７５０ｎｍ以上の赤外線を９６％以上遮断し、波長約３
５０ｎｍの紫外線をエアーリファレンス（当該赤外線遮
断フィルタを施した固体撮像素子用カバーガラスの透過
率を、空気の光透過率を１００％とした場合との比較で
評価することをいう）で５０％以上透過するものであれ
ば使用可能であり、波長約３５０ｎｍの紫外線を７０％
以上透過するものが好ましい。The infrared cutoff filter cuts off infrared rays having a wavelength of 750 nm or more by 96% or more and has a wavelength of about 3 nm.
50% or more of ultraviolet light of 50 nm by air reference (meaning that the transmittance of the cover glass for a solid-state imaging device provided with the infrared cutoff filter is evaluated in comparison with the case where the light transmittance of air is 100%). Any material that can transmit light can be used.
What transmits above is preferable.
【００１５】[0015]
【作用】本発明の固体撮像素子用カバーガラスによれ
ば、光透過表面に多層構造の赤外線遮断フィルタを備
え、波長約３５０ｎｍの紫外線の光透過率が５０％以上
であるので、固体撮像素子用カバーガラスの接着剤によ
る固定領域に赤外線遮断フィルタが覆った場合にも紫外
線硬化型の接着剤を用いてパッケージに気密封止が可能
となる。According to the cover glass for a solid-state imaging device of the present invention, a light-transmitting surface is provided with a multi-layered infrared cutoff filter, and the light transmittance of ultraviolet light having a wavelength of about 350 nm is 50% or more. Even when the infrared cutoff filter covers the fixing area of the cover glass with the adhesive, the package can be hermetically sealed using an ultraviolet curable adhesive.
【００１６】赤外線遮断フィルタがＳｉＯ2層とＴａ2Ｏ
5層とを交互に積層した多層膜により構成されている本
発明の固体撮像素子用カバーガラスによれば、波長約３
５０ｎｍの紫外線の光透過率が５０％以上である固体撮
像素子用カバーガラスを既存の製膜技術により容易に作
製可能となる。The infrared cutoff filter is composed of a SiO 2 layer and Ta 2 O
According to the cover glass for a solid-state imaging device of the present invention, which is composed of a multilayer film in which five layers are alternately laminated, a wavelength of about 3
A cover glass for a solid-state imaging device having a 50 nm ultraviolet light transmittance of 50% or more can be easily manufactured by existing film forming techniques.
【００１７】また、赤外線遮断フィルタを一方の光透過
表面の全面に設けた固体撮像素子用カバーガラスによれ
ば、パターンを設けたマスクを使用することなく均質な
特性の赤外線遮断フィルタを備えた固体撮像素子用カバ
ーガラスを容易に作製することができる。Further, according to the cover glass for a solid-state imaging device in which the infrared cutoff filter is provided on the entire surface of one of the light transmitting surfaces, a solid having the infrared cutoff filter having a uniform characteristic without using a mask provided with a pattern. A cover glass for an image sensor can be easily manufactured.
【００１８】さらに、波長４００〜６００ｎｍの範囲の
光透過率が平均９０％以上である固体撮像素子用カバー
ガラスによれば、赤外光を遮断すると共に可視域の光量
を確保できるので、視感度補正されて色再現性がよく明
るい画像が得られる。Further, according to the cover glass for a solid-state image sensor having an average light transmittance of 90% or more in the wavelength range of 400 to 600 nm, infrared light can be blocked and a sufficient amount of light in the visible region can be secured. A corrected image with good color reproducibility is obtained.
【００１９】[0019]
【発明の実施の形態】図１は、本発明に係る固体撮像素
子用カバーガラスの説明図であって、１は固体撮像素子
用カバーガラスを、２は多層構造の赤外線遮断フィルタ
を、３はパッケージを、４は固体撮像素子用カバーガラ
ス１が嵌入されるパッケージ３の嵌入部を、５は接着剤
をそれぞれ示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view of a cover glass for a solid-state image sensor according to the present invention, wherein 1 is a cover glass for a solid-state image sensor, 2 is a multilayer infrared cutoff filter, and 3 is a filter. The package 4 has a fitting portion of the package 3 into which the cover glass 1 for a solid-state imaging device is fitted, and 5 has an adhesive.
【００２０】本発明の固体撮像素子用カバーガラス１
（以下、カバーガラス１と称す）は、例えば、膨張係数
が４０〜８０×１０−７／℃のホウ珪酸ガラスからな
り、長辺１１．０ｍｍ、短辺１０．０ｍｍ、厚さ０．３
〜１．４ｍｍの寸法を有し、その表面は鏡面に研磨され
ており、一方の光透過表面１ａには多層構造の赤外線遮
断フィルタ２が形成されている。A cover glass 1 for a solid-state image sensor according to the present invention.
The cover glass 1 (hereinafter referred to as cover glass 1) is made of, for example, borosilicate glass having an expansion coefficient of 40 to 80 × 10 −7 / ° C., and has a long side of 11.0 mm, a short side of 10.0 mm, and a thickness of 0.3.
It has a size of up to 1.4 mm, its surface is polished to a mirror surface, and an infrared cutoff filter 2 having a multilayer structure is formed on one light transmission surface 1a.
【００２１】赤外線遮断フィルタ２を設けたカバーガラ
ス１は、図２に実線で示すように、波長７５０ｎｍ以上
の赤外線を９６％以上遮断し、波長約３５０ｎｍの紫外
線を８０％以上透過し、かつ波長４００〜６００ｎｍの
可視光の光透過率がエアーリファレンスで平均９０％以
上である。この赤外線遮断フィルタ２は、カバーガラス
１の光透過表面１ａ側から厚さ７５〜１６０ｎｍのＳｉ
Ｏ2層２ｂと同じく厚さ７５〜１６０ｎｍのＴａ2Ｏ5層
２ａとが交互に約４０層積層された多層膜により構成さ
れている。As shown by the solid line in FIG. 2, the cover glass 1 provided with the infrared cutoff filter 2 blocks 96% or more of infrared rays having a wavelength of 750 nm or more, transmits 80% or more of ultraviolet rays having a wavelength of about 350 nm, and has a wavelength of not less than 80%. The light transmittance of visible light of 400 to 600 nm is 90% or more on average with an air reference. The infrared cutoff filter 2 has a thickness of 75 to 160 nm from the light transmitting surface 1 a side of the cover glass 1.
And O 2 layer 2b Like thick 75~160nm Ta 2 O 5 layer 2a is composed of a multilayer film which is about 40 layers alternately stacked.
【００２２】これに対して、従来のＳｉＯ2層とＴｉＯ2
層とが交互に積層された構造の赤外線遮断フィルタを設
けたカバーガラスは、図２に破線で示すように、波長約
３５０ｎｍの紫外線をほとんど透過しないものである。On the other hand, the conventional SiO 2 layer and TiO 2
A cover glass provided with an infrared cutoff filter having a structure in which layers are alternately stacked has almost no transmission of ultraviolet light having a wavelength of about 350 nm as shown by a broken line in FIG.
【００２３】上記カバーガラス１を使用して、固体撮像
素子を気密封止する場合を説明する。A case in which the solid-state imaging device is hermetically sealed using the cover glass 1 will be described.
【００２４】カバーガラス１に当接するパッケージ２の
部分にディスペンサーを用いて紫外線硬化型を有する接
着剤５を塗布する。次に、接着剤５が塗布されたカバー
ガラス１をパッケージ３の上部の嵌入部４に嵌入する。
次いで、カバーガラス１が嵌入されたパッケージ３を紫
外線ランプ６により紫外線を照射して接着剤５を硬化さ
せてカバーガラス１をパッケージ３に接着する。A UV curable adhesive 5 is applied to a portion of the package 2 which comes into contact with the cover glass 1 using a dispenser. Next, the cover glass 1 to which the adhesive 5 has been applied is fitted into the fitting portion 4 on the upper part of the package 3.
Next, the package 3 in which the cover glass 1 is fitted is irradiated with ultraviolet rays from an ultraviolet lamp 6 to cure the adhesive 5, and the cover glass 1 is bonded to the package 3.
【００２５】上記カバーガラス１の接着に要した時間は
３０秒程度であり、熱硬化型の接着剤を使用する場合の
約６０分と比べると、著しく短くすることができた。The time required for bonding the cover glass 1 was about 30 seconds, which was significantly shorter than about 60 minutes when a thermosetting adhesive was used.
【００２６】上記の固体撮像素子用カバーガラス１を作
製する場合、例えば、研磨仕上げされた短辺１５０ｍ
ｍ、長辺２００ｍｍ、厚さ０．５ｍｍの寸法を有するホ
ウ珪酸ガラスからなる材料板ガラス１０の表面に真空蒸
着法やスパッタリング法等により、仕様によるがＳｉＯ
2層２ｂとＴａ2Ｏ5層２ａとを交互に約４０層積層する
ことにより波長７５０ｎｍ以上の赤外線を９６％以上遮
断し、波長約３５０ｎｍの紫外線を８０％以上透過する
赤外線遮断フィルタ２を形成する。次いで、赤外線遮断
フィルタ２が形成された材料板ガラス１０を例えば、長
辺１１．０ｍｍ、短辺１０．０ｍｍになるように切断
し、各エッジ部を面取りした後、洗浄・乾燥する。When the above-mentioned cover glass 1 for a solid-state image sensor is manufactured, for example, a short side 150 m polished and finished is used.
m, a long side of 200 mm, and a thickness of 0.5 mm. The material is made of borosilicate glass.
By alternately laminating about 40 layers of the two layers 2b and the Ta 2 O 5 layers 2a, an infrared cutoff filter 2 that blocks 96% or more of infrared rays having a wavelength of 750 nm or more and transmits 80% or more of ultraviolet rays having a wavelength of about 350 nm is formed. I do. Next, the material sheet glass 10 on which the infrared cutoff filter 2 is formed is cut so as to have, for example, a long side of 11.0 mm and a short side of 10.0 mm, chamfer each edge portion, and wash and dry.
【００２７】なお、上記実施の形態では、赤外線遮断フ
ィルタ２を一面に設けたが、両面に設けてもよく、さら
に反射防止膜を設けてもよい。In the above-described embodiment, the infrared cutoff filter 2 is provided on one surface, but may be provided on both surfaces or an anti-reflection film may be provided.
【００２８】[0028]
【発明の効果】本発明の視感度補正用の赤外線遮断フィ
ルタを備えた固体撮像素子用カバーガラスによれば、波
長約３５０ｎｍの紫外線の光透過率が５０％以上である
ので、撮像装置の飛躍的な部品点数の削減及び薄型化が
可能となると共に、固体撮像素子用カバーガラスをパッ
ケージに気密封止する際に紫外線硬化型の接着剤が使用
可能であるので、短時間で気密封止することができる。According to the cover glass for a solid-state image pickup device provided with an infrared cutoff filter for correcting luminous efficiency according to the present invention, the light transmittance of ultraviolet light having a wavelength of about 350 nm is 50% or more, so that the image pickup apparatus is greatly improved. The number of components can be reduced and the thickness can be reduced, and an ultraviolet-curable adhesive can be used when the cover glass for a solid-state image sensor is hermetically sealed in a package. be able to.
【００２９】また、赤外線遮断フィルタを一方の光透過
表面の全面に設けた固体撮像素子用カバーガラスによれ
ば、パターンを設けたマスクを使用することなく固体撮
像素子用カバーガラスに所望の性能で均質な赤外線遮断
フィルタを容易に形成することができる。Further, according to the cover glass for a solid-state imaging device in which an infrared cutoff filter is provided on the entire surface of one of the light transmitting surfaces, the cover glass for the solid-state imaging device can have desired performance without using a mask provided with a pattern. A homogeneous infrared cutoff filter can be easily formed.
【図１】本発明の固体撮像素子用カバーガラスの説明図
であって、（Ａ）は固体撮像素子用カバーガラスの斜視
図、（Ｂ）は固体撮像素子パッケージの平面図、（Ｃ）
は（Ｂ）のＹ−Ｙ断面図。FIG. 1 is an explanatory view of a cover glass for a solid-state imaging device of the present invention, wherein (A) is a perspective view of the cover glass for a solid-state imaging device, (B) is a plan view of a solid-state imaging device package, and (C).
FIG. 4 is a sectional view taken along line YY of FIG.
【図２】本発明の固体撮像素子用カバーガラスの分光透
過率の説明図。FIG. 2 is an explanatory diagram of a spectral transmittance of a cover glass for a solid-state imaging device of the present invention.
【図３】従来の固体撮像素子用カバーガラスの説明図で
あって、（Ａ）は固体撮像素子用カバーガラスの斜視
図、（Ｂ）は固体撮像素子パッケージの断面図。3A and 3B are explanatory views of a conventional cover glass for a solid-state imaging device, wherein FIG. 3A is a perspective view of the cover glass for a solid-state imaging device, and FIG. 3B is a cross-sectional view of a solid-state imaging device package.
１ 固体撮像素子用カバーガラス １ａ 光透過表面 ２ 赤外線遮断フィルタ ２ａ Ｔａ2Ｏ5層 ２ｂ ＳｉＯ2層 ３ パッケージ ４ 嵌入部 ５ 接着剤 ６ 紫外線ランプREFERENCE SIGNS LIST 1 cover glass for solid-state imaging device 1 a light transmitting surface 2 infrared cutoff filter 2 a Ta 2 O 5 layer 2 b SiO 2 layer 3 package 4 fitting portion 5 adhesive 6 ultraviolet lamp
Claims (4)
ルタを備え、波長約３５０ｎｍの紫外線の光透過率が５
０％以上であることを特徴とする固体撮像素子用カバー
ガラス。An infrared cutoff filter having a multilayer structure is provided on a light transmitting surface, and the light transmittance of ultraviolet light having a wavelength of about 350 nm is 5
A cover glass for a solid-state imaging device, which is 0% or more.
Ｏ5層とを交互に積層した多層膜により構成されている
ことを特徴とする請求項１に記載の固体撮像素子用カバ
ーガラス。2. An infrared cutoff filter comprising a SiO 2 layer and a Ta 2
O 5 layer and the solid-state imaging device cover glasses according to claim 1, characterized in that it is constituted by a multilayer film formed by alternately laminating.
の全面に設けたことを特徴とする請求項１または２に記
載の固体撮像素子用カバーガラス。3. The cover glass for a solid-state imaging device according to claim 1, wherein an infrared cutoff filter is provided on an entire surface of one of the light transmitting surfaces.
率が平均９０％以上であることを特徴とする請求項１〜
３に記載の固体撮像素子用カバーガラス。4. The light transmittance in the wavelength range of 400 to 600 nm is 90% or more on average.
4. The cover glass for a solid-state imaging device according to 3.
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|---|---|---|---|
| JP2000235693A JP4143797B2 (en) | 2000-08-03 | 2000-08-03 | Solid-state image sensor package manufacturing method and solid-state image sensor package |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000235693A JP4143797B2 (en) | 2000-08-03 | 2000-08-03 | Solid-state image sensor package manufacturing method and solid-state image sensor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002050751A true JP2002050751A (en) | 2002-02-15 |
| JP4143797B2 JP4143797B2 (en) | 2008-09-03 |
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|---|---|---|---|
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| JP2004221541A (en) * | 2002-11-15 | 2004-08-05 | Nippon Electric Glass Co Ltd | Cover glass for solid imaging devices |
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