JP2002036129A - Polishing pad and manufacturing method therefor - Google Patents
Polishing pad and manufacturing method thereforInfo
- Publication number
- JP2002036129A JP2002036129A JP2000223541A JP2000223541A JP2002036129A JP 2002036129 A JP2002036129 A JP 2002036129A JP 2000223541 A JP2000223541 A JP 2000223541A JP 2000223541 A JP2000223541 A JP 2000223541A JP 2002036129 A JP2002036129 A JP 2002036129A
- Authority
- JP
- Japan
- Prior art keywords
- sheet
- polishing pad
- polishing
- abrasive
- pad according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000006061 abrasive grain Substances 0.000 claims abstract description 23
- 239000011230 binding agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000004804 winding Methods 0.000 claims description 9
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 8
- 239000004745 nonwoven fabric Substances 0.000 claims description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000011032 tourmaline Substances 0.000 claims description 2
- 229940070527 tourmaline Drugs 0.000 claims description 2
- 229910052613 tourmaline Inorganic materials 0.000 claims description 2
- 239000002759 woven fabric Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 14
- 239000007788 liquid Substances 0.000 description 12
- 239000002002 slurry Substances 0.000 description 12
- 239000000835 fiber Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000010419 fine particle Substances 0.000 description 8
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229920001059 synthetic polymer Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 210000004177 elastic tissue Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【0001】[0001]
【発明に属する技術分野】この発明は、半導体ウェー
ハ、液晶ガラス及びハードディスク用等の精密研磨用研
磨パッドに係り、詳記すれば、主として半導体デバイス
の製造工程で用いられる化学的機械研磨用研磨パッドに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing pad for precision polishing of semiconductor wafers, liquid crystal glass, hard disks and the like, and more particularly, to a polishing pad for chemical mechanical polishing mainly used in a semiconductor device manufacturing process. About.
【0002】[0002]
【従来の技術】半導体集積回路の高集積化、微細化に伴
って、配線の積層化が行われている。すなわち、半導体
ウェーハの表面に配線材をパターン形成し、この上を酸
化シリコン等の絶縁物膜で覆い、次の配線材をパターン
形成し、これを順次繰返すプロセスが採用されている。2. Description of the Related Art As semiconductor integrated circuits become more highly integrated and miniaturized, wiring layers are being stacked. That is, a process is employed in which a wiring material is pattern-formed on the surface of a semiconductor wafer, the upper surface thereof is covered with an insulating film such as silicon oxide, the next wiring material is formed in a pattern, and this process is sequentially repeated.
【0003】配線の積層数が多くなると、酸化シリコン
等の絶縁物膜に段差が生じるため、次の配線材をパター
ン成形する前に、段差をなくして平坦化する必要がある
ので、化学的機械研磨が行われている。When the number of wiring layers increases, a step is formed in an insulating film such as silicon oxide. Therefore, it is necessary to eliminate the step and flatten the pattern before forming the next wiring material. Polishing has been performed.
【0004】化学的機械研磨は、研磨液(以下スラリー
という)を供給しながら、研磨パッドを使用して半導体
ウェーハを平坦に研磨するものであるが、研磨速度や研
磨精度等に優れた高い研磨性能が要求されている。In the chemical mechanical polishing, a semiconductor wafer is flatly polished using a polishing pad while supplying a polishing liquid (hereinafter referred to as slurry). Performance is required.
【0005】特に研磨精度に関しては、半導体ウェーハ
全面の平坦性(以下グローバル平坦性という)と半導体
ウェーハの微細なパターンの平坦性(以下ローカルな平
坦性という)の両方を満足する必要があるが、これらは
一方の精度を上げると他方の精度が低下するというトレ
ードオフの関係にあるといわれている。With respect to polishing accuracy, in particular, it is necessary to satisfy both flatness of the entire semiconductor wafer (hereinafter referred to as global flatness) and flatness of a fine pattern of the semiconductor wafer (hereinafter referred to as local flatness). These are said to be in a trade-off relationship in that increasing the accuracy of one reduces the accuracy of the other.
【0006】また、デバイス性能に影響を与えるような
大きな研磨キズ(以下キラースクラッチという)の発生
は極力避ける必要がある。Further, it is necessary to minimize the occurrence of large polishing flaws (hereinafter referred to as killer scratches) which affect device performance.
【0007】研磨速度、研磨精度及びキラースクラッチ
の発生は、以下に記載するように、研磨装置の性能以上
に研磨パッドの物性に大きく依存している。 (A)研磨速度:スラリーの保持性能が良く、且つミク
ロな表面粗さを持つ研磨部の面積が大きいこと。 (B)研磨精度:グローバルな平坦性には、圧縮弾性変
形量が大きいこと、ローカルな平坦性にはパッド硬さが
大きいこと。 (C)スクラッチが発生しないパッド:表面が多孔構造
で研磨くずなどが多孔部に蓄積され、研磨部に存在しな
いこと。As described below, the polishing rate, polishing accuracy, and occurrence of killer scratches greatly depend on the physical properties of the polishing pad more than the performance of the polishing apparatus. (A) Polishing rate: Good holding performance of slurry and large area of polished part having microscopic surface roughness. (B) Polishing accuracy: a large amount of compressive elastic deformation is required for global flatness, and a pad hardness is large for local flatness. (C) A pad that does not generate scratches: the surface has a porous structure, and polishing debris and the like are accumulated in the porous portion and do not exist in the polished portion.
【0008】(従来のパッドの実情)従来の研磨パッド
は、スラリーの保持性能とキラースクラッチ発生防止の
点から、表面(研磨面)が多孔構造のものが使用されて
おり、特に様々な形状、密度及び気泡径の発泡体が製造
でき、耐摩耗性が高い等の理由から、ポリウレタン発泡
体からなるシート状のパッドが多く用いられてきた。(Conventional Pads) Conventional polishing pads have a porous surface (polishing surface) in terms of slurry holding performance and prevention of killer scratching. A sheet-like pad made of a polyurethane foam has been used in many cases because a foam having a density and a cell diameter can be produced and the abrasion resistance is high.
【0009】しかしながら、従来のポリウレタン発泡体
からなるパッドは、長時間研磨していると、研磨材や研
磨クズがパッド表面の独立気泡の穴に詰まったり、穴が
圧縮変形することで、キラースクラッチの発生や研磨速
度の低下など研磨性能が低下する問題があった。However, when a conventional pad made of polyurethane foam is polished for a long period of time, abrasives and polishing debris may clog the holes of the closed cells on the pad surface, or the holes may be deformed by compression. There has been a problem that polishing performance is reduced, such as generation of polishing and a reduction in polishing rate.
【0010】このため数回使用するたびに、パッド表面
をダイヤモンド切削機等で削り取るドレッシングを実施
する必要があり、その度に研磨性能の検証を行わなけれ
ばならなかったので、極めて不便であった。[0010] For this reason, it is necessary to carry out dressing for scraping the pad surface with a diamond cutting machine or the like every time it is used several times, and the polishing performance must be verified each time, which is extremely inconvenient. .
【0011】また、製造ロット間で発泡体の気泡径や密
度のバラツキが生じ、同一ロット内でもスライスの部位
でバラツキが生じ、そのため安定した研磨性能が得られ
ない問題があった。[0011] Further, there is a problem that the bubble diameter and the density of the foam vary among the production lots, and the slice portion also varies within the same lot, so that stable polishing performance cannot be obtained.
【0012】パッド材料に無機微粒子からなる砥粒を分
散担持させ、耐摩耗性を調整してドレッシングの実施を
必要としない(セルフコンデショニング)パッド及びス
ラリーの使用量を低減させるパッドが提案されている。[0012] A pad that does not require dressing by adjusting abrasive resistance by dispersing and supporting abrasive particles made of inorganic fine particles on a pad material (a self-conditioning pad) and a pad that reduces the amount of slurry used have been proposed. I have.
【0013】しかしながら、上記パッド材料は独立発泡
体からなるものであるので、発泡体の気泡径や密度をパ
ッド全体にわたって均一且つ製造ロット間で安定に製造
することが困難なことと、砥粒を均一分散させた成形体
とすることが難しいことから、同様に安定した研磨性能
が得られない問題があった。However, since the pad material is composed of a closed cell, it is difficult to uniformly and stably produce cell diameters and densities of the foam over the entire pad and between production lots. Since it is difficult to obtain a uniformly dispersed molded body, there has been a problem that stable polishing performance cannot be similarly obtained.
【0014】[0014]
【発明が解決しようとする課題】この発明のうち請求項
1に記載の発明は、従来の発砲ポリウレタンからなるシ
ート状の研磨パッドの欠点である安定した研磨性能が得
られない問題を解消した研磨パッドを提供することを目
的とする。DISCLOSURE OF THE INVENTION An object of the present invention is to provide a polishing method which eliminates the drawback of a conventional polishing pad made of foamed polyurethane which cannot provide stable polishing performance. It is intended to provide a pad.
【0015】また、請求項3に記載の発明は、砥粒の分
散パターンを同じようにして、スラリーの使用量を低減
させ、しかも安定した研磨性能が得られる研磨パッドを
提供することを目的とする。It is another object of the present invention to provide a polishing pad in which the dispersion pattern of abrasive grains is made the same, the amount of slurry used is reduced, and stable polishing performance is obtained. I do.
【0016】また、請求項9に記載の発明は、請求項1
に記載の研磨パッドを、工業的に容易に製造する方法を
提供することを目的とする。The invention according to claim 9 is the first invention.
An object of the present invention is to provide a method for industrially easily producing the polishing pad described in (1).
【0017】[0017]
【課題を解決するための手段】上記目的を達成するた
め、本発明者らは鋭意研究の結果、シートの切断面を研
磨パッドの研磨面とすれば、研磨面の微細構造を略同一
とすることができるから、安定した研磨性能が得られる
ことを見出し、本発明に到達した。しかして従来、シー
トの切断面を研磨パッドの研磨面とすることは全く行わ
れていないし、このような発想も全く知られていない。Means for Solving the Problems In order to achieve the above object, the present inventors have made intensive studies and found that if the cut surface of the sheet is the polishing surface of the polishing pad, the fine structure of the polishing surface is substantially the same. As a result, the present inventors have found that stable polishing performance can be obtained, and have reached the present invention. Conventionally, the cut surface of the sheet is not used as the polishing surface of the polishing pad at all, and such an idea is not known at all.
【0018】即ち請求項1に記載の発明は、1種類以上
のシートの切断面が、研磨パッドの研磨面にスパイラル
状に配置されていることを特徴とする。That is, the invention according to claim 1 is characterized in that the cut surfaces of one or more types of sheets are spirally arranged on the polishing surface of the polishing pad.
【0019】シートの切断面を研磨面とすれば、同じシ
ートからは同じ研磨面が得られると共に、研磨面が削ら
れても内部も同じ研磨面であるから、安定した研磨性能
が得られるものである。If the cut surface of the sheet is a polished surface, the same polished surface can be obtained from the same sheet, and even if the polished surface is cut, the inside is the same polished surface, so that stable polishing performance can be obtained. It is.
【0020】シートの表面を研磨面とすると、繊維の長
さ方向に擦ることになるので繊維が抜けやすくなるが、
切断面を研磨面とすると、繊維の端面を擦ることにな
り、繊維は擦り減っても抜けないから、安定且つ優れた
研磨性能が得られるものと思われる。When the surface of the sheet is a polished surface, the fibers are rubbed in the length direction of the fibers, so that the fibers are easily removed.
When the cut surface is a polished surface, the end surface of the fiber is rubbed, and the fiber does not come off even if it is rubbed, so that it is considered that stable and excellent polishing performance can be obtained.
【0021】本発明の研磨パッドは、シートの切断面が
スパイラル状に配設されているが、このようにすること
によって、切断面で研磨しても、層間剥離を少なくする
ことができる。これに反して、単に積層した切断面を研
磨面としたのでは、研磨抵抗等によって容易に層間剥離
が生じ、研磨パッドとして産業上使用し得ない。In the polishing pad of the present invention, the cut surface of the sheet is arranged in a spiral shape. By doing so, even if the cut surface is polished, delamination can be reduced. On the contrary, if the laminated cut surface is simply used as the polishing surface, delamination easily occurs due to polishing resistance or the like, and cannot be used industrially as a polishing pad.
【0022】また、請求項3に記載の発明は、前記シー
トの少なくとも1種は砥粒シートとしたことを特徴とす
る。Further, the invention according to claim 3 is characterized in that at least one of the sheets is an abrasive sheet.
【0023】シートに略均一に砥粒含有液を塗布すれ
ば、表面と内部とで砥粒含有量が異なっても、シート切
断面及びシート表面と内部との砥粒含有パターンは略同
一であるので、パッドの表面が削られても、常に略一定
の砥粒パターンを研磨面とすることができるから、安定
した研磨性能が得られる。If the abrasive grain-containing liquid is applied to the sheet substantially uniformly, even if the abrasive grain content is different between the surface and the inside, the abrasive grain-containing pattern on the sheet cut surface and the sheet surface and the inside is substantially the same. Therefore, even if the surface of the pad is shaved, a substantially constant abrasive grain pattern can always be used as the polished surface, so that stable polishing performance can be obtained.
【0024】また、請求項9に記載の発明は、シートを
スパイラル状に巻き付けて成形することを特徴とする。The invention according to claim 9 is characterized in that the sheet is wound and formed into a spiral shape.
【0025】本発明によれば、使用する各シートの厚み
寸法を選択することで、それぞれのシート切断面の物性
による研磨機能部位の微細構造を一定に制御することが
できるため、研磨能力にバラツキのない安定した研磨パ
ッドを提供できる。According to the present invention, by selecting the thickness dimension of each sheet to be used, the fine structure of the polishing function part due to the physical properties of each sheet cut surface can be controlled to be constant, so that the polishing ability varies. It is possible to provide a stable polishing pad without any problem.
【0026】次に、本発明の実施の形態を説明する。Next, an embodiment of the present invention will be described.
【0027】[0027]
【発明の実施の形態】本発明に使用するシートは、スパ
イラル状にワインドできる機械的物性を有するものであ
れば良く、特に限定されない。使用するシートの厚み
は、0.05〜10mm程度、好ましくは0.1〜3m
mである。シート厚みが、0.05mmに満たないと、
シート間の接着剤が相対的に増加するため、シート切断
面の研磨機能が十分に機能できなくなり、また、10m
mを越えると、シート切断面の研磨機能の影響が大きく
なりすぎ、研磨能力がシート切断面の物性に支配される
と共に、スパイラル状に強くワインドできずに軟らかく
なり、研磨パッドとして機能できなくなる。BEST MODE FOR CARRYING OUT THE INVENTION The sheet used in the present invention is not particularly limited as long as it has mechanical properties capable of being wound in a spiral shape. The thickness of the sheet to be used is about 0.05 to 10 mm, preferably 0.1 to 3 m
m. If the sheet thickness is less than 0.05mm,
Since the adhesive between the sheets relatively increases, the polishing function of the cut surface of the sheet cannot be sufficiently performed.
If it exceeds m, the effect of the polishing function on the cut surface of the sheet becomes too large, and the polishing performance is governed by the physical properties of the cut surface of the sheet. In addition, the material cannot be wound in a spiral shape, becomes soft, and cannot function as a polishing pad.
【0028】本発明に使用するシートとしては、織布,
不織布,フェルト及びペーパーの形態でシート状に加工
した化学合成繊維や無機繊維、弾性高分子シート、及び
無機微粒子を含むシート等を使用することができるが、
比較的空隙率が大きく親水性のものが好ましい。The sheet used in the present invention includes woven fabric,
Non-woven fabrics, felts and papers that are processed into sheets in the form of synthetic fibers and inorganic fibers, elastic polymer sheets, and sheets containing inorganic fine particles can be used.
Those having a relatively large porosity and being hydrophilic are preferred.
【0029】本発明に使用するシートの種類は、1種類
でも良いが、前記(A)〜(C)の要求特性に適合させ
るため、2種類以上を組み合わせて使用するのが好まし
い。特に、無機微粒子を含むシートと繊維状シートとを
組み合わせて使用するのが好ましい。The type of sheet used in the present invention may be one, but it is preferable to use a combination of two or more types in order to meet the above-mentioned required characteristics (A) to (C). In particular, it is preferable to use a sheet containing inorganic fine particles in combination with a fibrous sheet.
【0030】本発明の砥粒シートとしては、砥粒を合成
高分子に分散充填したものや、砥粒をバインダー材に分
散させたものを繊維状シートに含浸充填したものを使用
すれば良い。砥粒液を塗布後、例えばロールを通過させ
ることによって、砥粒のシートへの含有量を更に均一化
させることができる。As the abrasive grain sheet of the present invention, a sheet in which abrasive grains are dispersed and filled in a synthetic polymer or a sheet in which abrasive grains are dispersed in a binder material and impregnated and filled in a fibrous sheet may be used. After applying the abrasive liquid, for example, by passing the abrasive liquid through a roll, the content of the abrasive particles in the sheet can be made more uniform.
【0031】本発明に使用する砥粒としては、酸化ケイ
素、酸化セリウム、酸化アルミニウム、二酸化マンガ
ン、酸化鉄、酸化亜鉛、炭化ケイ素、炭化ホウ素、合成
ダイヤモンド及びトルマリン粉体等の単独若しくは二種
以上が挙げられる。使用する砥粒自体は、この種目的に
使用する従来公知のものを使用すれば良く、特に限定さ
れないが、研磨時のスラリーに使用する砥粒と同種のも
のとするのが良い。As the abrasive used in the present invention, silicon oxide, cerium oxide, aluminum oxide, manganese dioxide, iron oxide, zinc oxide, silicon carbide, boron carbide, synthetic diamond, tourmaline powder and the like, or two or more kinds thereof can be used. Is mentioned. The abrasive grains used may be conventional ones used for this purpose, and are not particularly limited, but are preferably the same type as the abrasive grains used in the slurry at the time of polishing.
【0032】使用する砥粒の粒子径は、0.01〜10
μmであるのが好ましい。この範囲内であれば、高密度
且つ均一に分散させることができるが、粒子径が10μ
mを越えると、キラースクラッチの原因となる。The particle size of the abrasive used is 0.01 to 10
It is preferably μm. Within this range, high-density and uniform dispersion can be achieved, but the particle diameter is 10 μm.
If m is exceeded, killer scratches may be caused.
【0033】砥粒を分散させるバインダーとしては、ポ
リアクリル系,エポキシ系,ポリウレタン系等の高分子
重合体を水若しくはDMF,DEF等の有機溶媒で希釈
したものが好適に使用できる。砥粒液中の砥粒の含有量
は、好ましくは50〜90重量%である。As a binder for dispersing the abrasive grains, a polymer obtained by diluting a high molecular polymer such as polyacrylic, epoxy or polyurethane with water or an organic solvent such as DMF or DEF can be suitably used. The content of the abrasive grains in the abrasive liquid is preferably 50 to 90% by weight.
【0034】上記本発明の研磨パッドは、シートに好ま
しくは結着剤を塗布若しくは含浸させながら、スパイラ
ル状に巻き付けて円筒状に成形することによって製造す
ることができる。結着剤は、巻き付けた末端にのみ使用
しても良い。また、巻き付けた後、円筒形の弾性体に密
嵌させるようにすれば、結着剤を全く使用しなくとも差
し支えない。The above-mentioned polishing pad of the present invention can be manufactured by winding it into a spiral shape and forming it into a cylindrical shape, preferably while coating or impregnating a sheet with a binder. The binder may be used only on the wound end. In addition, if it is made to fit tightly on the cylindrical elastic body after winding, it does not matter if a binder is not used at all.
【0035】円筒形に形成した成形物を、巻軸と直角若
しくはクロスする方向に切断し、切断面を研磨面として
本発明の研磨パッドとするか、或いはシートを研磨パッ
ドの厚さ寸法にスリットしながらシャフトに巻き付け、
このまま本発明の研磨パッドとすれば良い。The cylindrical molded product is cut in a direction perpendicular to or crossing the winding axis, and the cut surface is used as the polishing surface of the polishing pad of the present invention, or the sheet is slit into the thickness of the polishing pad. While winding around the shaft,
The polishing pad of the present invention may be used as it is.
【0036】シートとして、砥粒シート単独若しくは砥
粒シートと繊維状シートとすれば、スラリーを使用しな
いか、スラリーの使用量を低減させる研磨パッドとする
ことができる。また、この研磨パッドは、パッド表面が
僅かづつ削られるので、ドレッシングの実施を必要とし
ない。If the sheet is an abrasive sheet alone or an abrasive sheet and a fibrous sheet, a polishing pad that does not use slurry or reduces the amount of slurry can be used. In addition, the polishing pad does not require dressing since the pad surface is slightly scraped off.
【0037】このような研磨パッドとすれば、パッド基
材に充填する砥粒によって研磨性能を付与すると共にパ
ッド基材が適度の摩耗性を有するので、ウエーハの研磨
枚数により、順次パッドの表面がわずかづつ削られ、新
しい表面で研磨を行うことができる。With such a polishing pad, the polishing performance is given by the abrasive grains filled in the pad base material, and the pad base material has an appropriate abrasion. Therefore, the surface of the pad is successively changed according to the number of polished wafers. It can be sharpened little by little and can be polished on a new surface.
【0038】上記研磨パッドを使用すると安定した品質
の研磨面が得られる理由は、シートに略均一に砥粒含有
液を塗布すれば、表面と内部とで砥粒含有量が異なって
も、シート切断面及びシート表面と内部との砥粒含有パ
ターンは略同一であることから、常に一定の研磨条件で
研磨できるからと思われる。The reason for using the polishing pad to obtain a polished surface of stable quality is that if the abrasive-gear-containing liquid is applied to the sheet almost uniformly, even if the abrasive-grain content is different between the surface and the inside, Since the abrasive grain-containing patterns on the cut surface, the sheet surface, and the inside are substantially the same, it is considered that the polishing can always be performed under constant polishing conditions.
【0039】従来、薄いシートに砥粒を含有させること
についても、これをロール状に巻き付けることについて
も、切断面を研磨面とすることについても全く知られて
いない。Conventionally, neither the inclusion of abrasive grains in a thin sheet, the winding of the same in a roll, nor the use of a cut surface as a polished surface has been known at all.
【0040】前記方法で形成された研磨パッドは、シャ
フトの抜けた穴が中央に形成される。使用目的によって
は、このまま研磨パッドとして使用することもできる
が、合成樹脂などで穴を埋めて研磨パッドとするのが好
ましい。In the polishing pad formed by the above method, a hole through which a shaft is formed is formed at the center. Depending on the purpose of use, the polishing pad can be used as it is, but it is preferable to fill the hole with a synthetic resin or the like to form the polishing pad.
【0041】シート間の結着を強めるため、シートを巻
き付ける際に、結着材として合成高分子液を塗布しなが
ら巻き付けるのが良い。結着材としての合成高分子液と
しては、アクリル系,エポキシ系,ポリエステル系及び
ウレタン系等の熱硬化性樹脂の溶剤溶液若しくは水性エ
マルジョンを使用することができる。また、熱可塑性樹
脂を使用し、ヒートシールによって結着させても良い。
要するに、本発明において、結着剤は、接着剤を含む概
念で使用しているものであり、シートを貼り合わせるこ
とができるものなら、特に限定されないものである。In order to strengthen the binding between the sheets, it is preferable to wind the sheets while applying the synthetic polymer liquid as a binder when winding the sheets. As the synthetic polymer liquid as the binder, a solvent solution or an aqueous emulsion of a thermosetting resin such as an acrylic, epoxy, polyester, or urethane resin can be used. Alternatively, a thermoplastic resin may be used and bound by heat sealing.
In short, in the present invention, the binder is used in a concept including an adhesive, and is not particularly limited as long as a sheet can be attached.
【0042】上記結着材は、シート間の結着としての機
能の他に、塗布厚みを一定に制御して、研磨領域として
の機能を持たせることも、また、パッドの弾性圧縮率の
調整材としての機能を持たせることもできる。In addition to the function of binding between the sheets, the above-mentioned binder can be provided with a function as a polishing region by controlling the coating thickness to a constant value, and also can adjust the elastic compressibility of the pad. It can also have a function as a material.
【0043】[0043]
【実施例】次に、実施例を挙げて本発明を更に説明する
が、本発明はこれら実施例に限定されない。Next, the present invention will be further described with reference to examples, but the present invention is not limited to these examples.
【0044】実施例 1 メタクリル酸メチル水溶液に、砥粒として平均粒径1μ
mの酸化セリウムを均一分散させて砥粒液を作成した。Example 1 In an aqueous solution of methyl methacrylate, the average particle size was 1 μm as abrasive grains.
m of cerium oxide was uniformly dispersed to prepare an abrasive liquid.
【0045】上記砥粒液を幅200mm、秤量20g/
m2のスパンボンドPET不織布2枚の間に塗布しなが
らロール成形し、加熱乾燥してメタクリル酸メチルを硬
化させ、厚さ0.3mmの無機微粒子を含むシート
(A)を作成した。得られたシート(A)の秤量は、6
00g/m2でシートに対する酸化セリウムの含有量は
79重量%であった。The above abrasive liquid is 200 mm wide and weighs 20 g /
and roll forming while applying between two spans of m 2 bond PET nonwoven fabric and dried by heating to cure the methyl methacrylate to prepare a sheet (A) including a 0.3mm-thick inorganic fine particles. The weight of the obtained sheet (A) is 6
At 00 g / m 2 , the content of cerium oxide with respect to the sheet was 79% by weight.
【0046】上記無機微粒子を含むシート(A)を、前
記メタクリル酸メチル水溶液を転写ロールで塗布し、タ
ッチロールで加圧しながら、直径200mmまでワイン
ドし、加熱乾燥して硬化させた後、スライスして本発明
の研磨パッドを作成した。The sheet (A) containing the inorganic fine particles is coated with the aqueous solution of methyl methacrylate with a transfer roll, wound up to a diameter of 200 mm while pressing with a touch roll, cured by heating and drying, and then sliced. Thus, a polishing pad of the present invention was prepared.
【0047】作成した研磨パッドの表面(研磨面)硬度
は、ASKER C型硬度計で96度であり、密度は
2.12g/cm3であった。The surface (polishing surface) hardness of the polishing pad thus prepared was 96 degrees with an ASKER C type hardness meter, and the density was 2.12 g / cm 3 .
【0048】得られた研磨パッドを使用し、酸化セリウ
ム微粉末を混合したスラリーを供給しながら、酸化膜付
きのシリコンウェーハを研磨したところ、研磨速度は5
000Å/分であり、ウェーハにはマイクロスクラッチ
も観察されなかった。When a silicon wafer with an oxide film was polished using the obtained polishing pad while supplying a slurry mixed with cerium oxide fine powder, the polishing rate was 5%.
000 ° / min, and no micro-scratch was observed on the wafer.
【0049】また、得られた研磨パッドを使用し、純水
を供給しながら、酸化膜付きのシリコンウェーハを研磨
したところ、研磨速度は1500Å/分であり、ウェー
ハにはマイクロスクラッチも観察されなかった。When the obtained polishing pad was used to polish a silicon wafer with an oxide film while supplying pure water, the polishing rate was 1500 ° / min, and no micro-scratch was observed on the wafer. Was.
【0050】実施例 2 上記無機微粒子を含むシート(A)と幅200mm、秤
量80g/m2のスパンボンドPET不織布とを前記メ
タクリル酸メチル水溶液を転写ロールで塗布し、タッチ
ロールで加圧しながら、直径200mmまでワインド
し、加熱乾燥して硬化させた後、スライスして本発明の
研磨パッドを作成した。Example 2 The above-mentioned sheet (A) containing the inorganic fine particles and a spunbond PET nonwoven fabric having a width of 200 mm and a weighing of 80 g / m 2 were applied with the above-mentioned aqueous solution of methyl methacrylate using a transfer roll, and pressed with a touch roll. After winding to a diameter of 200 mm, drying by heating and curing, the slice was sliced to prepare a polishing pad of the present invention.
【0051】作成した研磨パッドの表面(研磨面)硬度
は、ASKER C型硬度計で90度であり、密度は
2.85g/cm3であった。The surface (polishing surface) hardness of the prepared polishing pad was 90 degrees by an ASKER C type hardness meter, and the density was 2.85 g / cm 3 .
【0052】得られた研磨パッドを使用し、酸化セリウ
ム微粉末を混合したスラリーを供給しながら、酸化膜付
きのシリコンウェーハを研磨したところ、研磨速度は3
000Å/分であり、ウェーハにはマイクロスクラッチ
も観察されなかった。When a silicon wafer with an oxide film was polished using the obtained polishing pad while supplying a slurry in which cerium oxide fine powder was mixed, the polishing rate was 3%.
000 ° / min, and no micro-scratch was observed on the wafer.
【0053】実施例 3 幅200mm、秤量20g/m2のスパンボンドPET
不織布にメタクリル酸メチル水溶液を塗布しながらロー
ル成形し、加熱乾燥してメタクリル酸メチルを硬化さ
せ、厚さ0.1mmのシート(B)を作成した。Example 3 Spunbond PET with a width of 200 mm and a weighing of 20 g / m 2
The nonwoven fabric was roll-formed while applying an aqueous solution of methyl methacrylate, and dried by heating to harden the methyl methacrylate to prepare a sheet (B) having a thickness of 0.1 mm.
【0054】上記シート(B)と幅200mm、秤量8
0g/m2のスパンボンドPET不織布とを前記メタク
リル酸メチル水溶液を転写ロールで塗布し、タッチロー
ルで加圧しながら、直径200mmまでワインドし、加
熱乾燥して硬化させた後、スライスして本発明の研磨パ
ッドを作成した。The above sheet (B), width 200 mm, weighing 8
The sponge bond nonwoven fabric of 0 g / m 2 is coated with the above-mentioned aqueous solution of methyl methacrylate by a transfer roll, wound up to a diameter of 200 mm while pressing with a touch roll, cured by heating and drying, and then sliced. Polishing pad was prepared.
【0055】作成した研磨パッドの表面(研磨面)硬度
は、ASKER C型硬度計で85度であり、密度は
1.5g/cm3であった。The surface (polishing surface) hardness of the prepared polishing pad was 85 degrees with an ASKER C type hardness meter, and the density was 1.5 g / cm 3 .
【0056】得られた研磨パッドを使用し、酸化セリウ
ム微粉末を混合したスラリーを供給しながら、酸化膜付
きのシリコンウェーハを研磨したところ、研磨速度は2
500Å/分であり、ウェーハにはマイクロスクラッチ
も観察されなかった。When a silicon wafer having an oxide film was polished using the obtained polishing pad while supplying a slurry in which cerium oxide fine powder was mixed, the polishing rate was 2.
At 500 ° / min, no microscratch was observed on the wafer.
【0057】実施例 4 水溶性ポリウレタンエマルジョンに、砥粒として平均粒
径1μmの酸化セリウムを均一分散させて砥粒液を作成
した。Example 4 Cerium oxide having an average particle diameter of 1 μm as abrasive grains was uniformly dispersed in a water-soluble polyurethane emulsion to prepare an abrasive liquid.
【0058】上記砥粒液を幅100mm、秤量20g/
m2のスパンボンドPET不織布2枚の間に塗布しなが
らロール成形し、加熱乾燥して、厚さ0.4mmの無機
微粒子を含むシート(C)を作成した、得られたシート
(C)の秤量は800g/m 2で、シートに対する酸化
セリウムの含有量は82重量%であった。The above abrasive liquid was 100 mm wide and weighed 20 g /
m2Between two spunbond PET non-woven fabrics
Roll-formed, heat-dried, inorganic 0.4mm thick
An obtained sheet in which a sheet (C) containing fine particles is prepared
The weight of (C) is 800 g / m. 2And oxidation to the sheet
The cerium content was 82% by weight.
【0059】上記無機微粒子を含むシート(C)と幅1
00mm、秤量80g/m2のスパンボンドPET不織
布とを、前記水溶性ポリウレタンエマルジョンを塗布
し、タッチロールで加圧しながら、直径60mmのシャ
フトに直径610mmまでワインドし、加熱乾燥して硬
化させた後、スライサーで2.5mm厚のシートにスラ
イスし、シャフトの抜けた中央の穴に直径60mm、厚
さ2.5mmのウレタンシートを接着し、本発明の研磨
パッドを作成した。The sheet (C) containing the inorganic fine particles and the width 1
After applying the water-soluble polyurethane emulsion to a spunbond PET nonwoven fabric of 00 mm and weighing 80 g / m 2 , applying pressure with a touch roll, winding to a shaft of 60 mm in diameter to a diameter of 610 mm, heating and drying and curing. Then, a 2.5 mm thick sheet was sliced with a slicer, and a urethane sheet having a diameter of 60 mm and a thickness of 2.5 mm was adhered to a central hole from which the shaft had come off to prepare a polishing pad of the present invention.
【0060】作成した研磨パッドの表面(研磨面)硬度
は、ASKER C型硬度計で96度であり、1kgf
荷重の圧縮率は、5%であった。The surface (polishing surface) hardness of the prepared polishing pad was 96 degrees with an ASKER C hardness meter, and was 1 kgf.
The compressibility of the load was 5%.
【0061】本発明の研磨パッドは、シート切断面の物
性による研磨機能部位の微細構造を一定に制御すること
ができるため、研磨能力にバラツキのない安定した研磨
パッドとすることができる。The polishing pad of the present invention can control the fine structure of the polishing function part depending on the physical properties of the cut surface of the sheet, so that a stable polishing pad having no variation in polishing ability can be obtained.
【0062】また、本発明の研磨パッドは、シートの切
断面を研磨面としているので、同じ研磨機能のシートか
らは同じ研磨面が得られると共に、研磨面が削られても
内部も同じ研磨面であるから、安定した研磨性能が得ら
れる。また、シートの表面を研磨面とすると、繊維の長
さ方向に擦ることになるので繊維が抜けやすくなるが、
切断面を研磨面としているので、繊維の端面を擦ること
になり、繊維は擦り減っても抜けないから、安定且つ優
れた研磨性能が得られる。Further, in the polishing pad of the present invention, since the cut surface of the sheet is used as the polishing surface, the same polishing surface can be obtained from the sheets having the same polishing function. Therefore, stable polishing performance can be obtained. In addition, if the surface of the sheet is a polished surface, the fibers will be rubbed in the length direction of the fibers, so the fibers will be easily removed,
Since the cut surface is a polished surface, the end face of the fiber is rubbed, and the fiber does not come off even if worn down, so that stable and excellent polishing performance can be obtained.
【0063】また、本発明の研磨パッドは、シートの切
断面がスパイラル状に配設されているが、このようにす
ることによって、切断面を激しく研磨しても、シートの
層間剥離がし難くなる。In the polishing pad of the present invention, the cut surface of the sheet is arranged in a spiral shape. By doing so, even if the cut surface is violently polished, the sheet is hardly delaminated. Become.
【0064】[0064]
【発明の効果】この発明のうち請求項1に記載の発明に
よれば、従来の発砲ポリウレタンからなるシート状の研
磨パッドの欠点を解消し、安定した研磨性能が得られる
と共にパッドの表面が僅かづつ削られるので、ドレッシ
ングを必要としない利点が得られる。According to the first aspect of the present invention, the drawbacks of the conventional sheet-shaped polishing pad made of foamed polyurethane are eliminated, stable polishing performance is obtained, and the surface of the pad is slightly reduced. The advantage is that dressing is not required.
【0065】また、請求項3に記載の発明によれば、請
求項1に記載の効果に加えて、砥粒の添加が不要若しく
はごく少量の添加で研磨できると共に、砥粒の分散パタ
ーンを同じようにして、スラリーの使用量を低減させ、
しかも安定した研磨性能が得られる。According to the third aspect of the present invention, in addition to the effect of the first aspect, polishing can be performed with no or little addition of abrasive grains, and the dispersion pattern of the abrasive grains is the same. In this way, the amount of slurry used is reduced,
Moreover, stable polishing performance can be obtained.
【0066】また、請求項9に記載の発明によれば、請
求項1に記載の研磨パッドを、工業的に容易に製造する
ことができる。According to the ninth aspect, the polishing pad according to the first aspect can be industrially easily manufactured.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3C058 AA07 AA09 CA06 DA17 3C063 AA02 AB05 BA15 BA33 BB02 BB03 BB04 BB07 BC03 BF09 CC22 CC30 EE10 FF30 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C058 AA07 AA09 CA06 DA17 3C063 AA02 AB05 BA15 BA33 BB02 BB03 BB04 BB07 BC03 BF09 CC22 CC30 EE10 FF30
Claims (12)
ドの研磨面にスパイラル状に配置されていることを特徴
とする研磨パッド。1. A polishing pad, wherein cut surfaces of one or more sheets are spirally arranged on a polishing surface of the polishing pad.
着されている請求項1に記載の研磨パッド。2. The polishing pad according to claim 1, wherein the contact portion of the sheet is bound via a binder.
に記載の研磨パッド。3. The sheet of claim 2, wherein the sheet comprises an abrasive sheet.
A polishing pad according to item 1.
である請求項3に記載の研磨パッド。4. The polishing pad according to claim 3, wherein the sheets are an abrasive sheet and a fibrous sheet.
μmの砥粒を含有する厚さ0.05〜10mmの繊維状
シートである請求項3又は4に記載の研磨パッド。5. The method according to claim 1, wherein the abrasive sheet has a particle size of from 0.01 to 10.
The polishing pad according to claim 3, which is a fibrous sheet having a thickness of 0.05 to 10 mm containing μm abrasive grains.
酸化アルミニウム、二酸化マンガン、酸化鉄、酸化亜
鉛、炭化ケイ素、炭化ホウ素、合成ダイヤモンド及びト
ルマリン粉体等の単独若しくは二種以上である請求項3
〜5のいずれか1項に記載の研磨パッド。6. The method according to claim 1, wherein the abrasive grains are silicon oxide, cerium oxide,
4. A single or two or more of aluminum oxide, manganese dioxide, iron oxide, zinc oxide, silicon carbide, boron carbide, synthetic diamond, and tourmaline powder.
The polishing pad according to any one of claims 1 to 5.
ェルト状繊維質シートである請求項4又は5に記載の研
磨パッド。7. The polishing pad according to claim 4, wherein the fibrous sheet is a woven fabric, a nonwoven fabric or a felt-like fibrous sheet.
る請求項1〜7のいずれか1項に記載の研磨パッド。8. The polishing pad according to claim 1, wherein the polishing pad is for chemical mechanical polishing.
することを特徴とする請求項1に記載の研磨パッドの製
造方法。9. The method for manufacturing a polishing pad according to claim 1, wherein the sheet is wound and formed into a spiral shape.
ながら、スパイラル状に巻き付けて円筒状に成形するこ
とを特徴とする請求項9に記載の研磨パッドの製造方
法。10. The method for producing a polishing pad according to claim 9, wherein the sheet is spirally wound and formed into a cylindrical shape while applying or impregnating an adhesive on the sheet.
直角若しくはクロスする方向に切断し、切断面を研磨面
としてなる請求項9又は10に記載の研磨パッドの製造
方法。11. The method for producing a polishing pad according to claim 9, wherein the cylindrical molded product is cut in a direction perpendicular to or crossing the winding axis, and the cut surface is used as a polishing surface.
砥粒シートと繊維状シートである請求項9〜11のいず
れか1項に記載の製造方法。12. The method according to claim 9, wherein the sheet is an abrasive sheet alone or an abrasive sheet and a fibrous sheet.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000223541A JP2002036129A (en) | 2000-07-25 | 2000-07-25 | Polishing pad and manufacturing method therefor |
TW090116382A TW552179B (en) | 2000-07-25 | 2001-07-04 | Polishing pad and method for manufacturing the same |
KR1020010041434A KR100789068B1 (en) | 2000-07-25 | 2001-07-11 | Polishing pad and method for manufacturing the same |
US09/910,013 US20020016145A1 (en) | 2000-07-25 | 2001-07-23 | Polishing pad and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000223541A JP2002036129A (en) | 2000-07-25 | 2000-07-25 | Polishing pad and manufacturing method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002036129A true JP2002036129A (en) | 2002-02-05 |
Family
ID=18717615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000223541A Pending JP2002036129A (en) | 2000-07-25 | 2000-07-25 | Polishing pad and manufacturing method therefor |
Country Status (4)
Country | Link |
---|---|
US (1) | US20020016145A1 (en) |
JP (1) | JP2002036129A (en) |
KR (1) | KR100789068B1 (en) |
TW (1) | TW552179B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7300335B2 (en) | 2003-02-12 | 2007-11-27 | Hoya Corporation | Glass substrate for data recording medium, manufacturing method thereof and polishing pad used in the method |
JP2012210683A (en) * | 2011-03-31 | 2012-11-01 | Kuraray Co Ltd | Polishing pad |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7001242B2 (en) * | 2002-02-06 | 2006-02-21 | Applied Materials, Inc. | Method and apparatus of eddy current monitoring for chemical mechanical polishing |
JP3917578B2 (en) * | 2003-10-30 | 2007-05-23 | 株式会社東芝 | Semiconductor device manufacturing method and manufacturing apparatus |
KR101166455B1 (en) * | 2009-03-30 | 2012-07-19 | 코오롱인더스트리 주식회사 | Method of manufacturing polishing pad and polishing pad manufactured thereof |
CN103786104A (en) * | 2014-01-10 | 2014-05-14 | 当涂县南方红月磨具磨料有限公司 | PVA (polyvinyl alcohol) resin cubic boron nitride grinding wheel |
CN103831743A (en) * | 2014-02-11 | 2014-06-04 | 当涂县南方红月磨具磨料有限公司 | Diamond grinding wheel containing poly aluminum chloride |
CN103831742A (en) * | 2014-02-11 | 2014-06-04 | 当涂县南方红月磨具磨料有限公司 | Ceramic and diamond grinding wheel containing tourmaline |
CN103846823A (en) * | 2014-02-11 | 2014-06-11 | 当涂县南方红月磨具磨料有限公司 | Urea-containing ceramic fused alumina zirconia grinding wheel |
CN103846822A (en) * | 2014-02-11 | 2014-06-11 | 当涂县南方红月磨具磨料有限公司 | Super-hard ceramic cubic boron nitride grinding wheel |
US11759909B2 (en) * | 2020-06-19 | 2023-09-19 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6036157U (en) * | 1983-08-19 | 1985-03-12 | 三共理化学株式会社 | polishing machine |
JPH05277958A (en) * | 1992-03-31 | 1993-10-26 | Seiken:Kk | Polishing roll used for cutting mill scale |
JPH0647677A (en) * | 1992-07-31 | 1994-02-22 | Nippon Steel Corp | Laminate roll type grinding tool and its manufacture |
JPH1199468A (en) * | 1997-09-29 | 1999-04-13 | Toshiba Corp | Polishing pad and polishing device using the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
-
2000
- 2000-07-25 JP JP2000223541A patent/JP2002036129A/en active Pending
-
2001
- 2001-07-04 TW TW090116382A patent/TW552179B/en not_active IP Right Cessation
- 2001-07-11 KR KR1020010041434A patent/KR100789068B1/en not_active IP Right Cessation
- 2001-07-23 US US09/910,013 patent/US20020016145A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6036157U (en) * | 1983-08-19 | 1985-03-12 | 三共理化学株式会社 | polishing machine |
JPH05277958A (en) * | 1992-03-31 | 1993-10-26 | Seiken:Kk | Polishing roll used for cutting mill scale |
JPH0647677A (en) * | 1992-07-31 | 1994-02-22 | Nippon Steel Corp | Laminate roll type grinding tool and its manufacture |
JPH1199468A (en) * | 1997-09-29 | 1999-04-13 | Toshiba Corp | Polishing pad and polishing device using the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7300335B2 (en) | 2003-02-12 | 2007-11-27 | Hoya Corporation | Glass substrate for data recording medium, manufacturing method thereof and polishing pad used in the method |
JP2012210683A (en) * | 2011-03-31 | 2012-11-01 | Kuraray Co Ltd | Polishing pad |
Also Published As
Publication number | Publication date |
---|---|
US20020016145A1 (en) | 2002-02-07 |
TW552179B (en) | 2003-09-11 |
KR20020008753A (en) | 2002-01-31 |
KR100789068B1 (en) | 2007-12-26 |
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