JP2002004044A - Sputtering system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering system, with which efficiency of target utilization can be improved. SOLUTION: The target 31 has a cylindrical shape, and a magnet 40 located in a position outside the target 31 is arranged on a cylinder coaxial with the cylindrical axis of the target 31. Because, resultantly, the direction of the cylindrical axis of the target 31 becomes aligned with the direction of the magnetic field produced by the magnet 40, the density of inert-gas ions in the vicinity of the target 31 becomes nearly uniform and local wear at the surface of the target 31 can be prevented. As a result, the efficiency of utilization of the target 31 can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sputtering apparatus for depositing a metal or dielectric film on a substrate such as a semiconductor or a dielectric by sputtering a target.

[0002]

2. Description of the Related Art In a sputtering apparatus using plasma, a method of increasing a sputtering rate by arranging a magnet near a target and increasing a plasma density by a magnetic field is widely used.

FIG. 5 is a diagram showing an example of the configuration of a conventional sputtering apparatus, showing the vicinity of a target.

As shown in FIG. 5, in the conventional example, a target 51, a magnet 52, and an anode 54 are provided in an inert gas atmosphere. In FIG. 5, the magnetic flux lines 53 are magnetic flux lines created by the magnets 52.

[0005] Hereinafter, a sputtering process in the sputtering apparatus configured as described above will be described.

When an electric field is applied between the target 51 and the anode 54, a discharge is generated, and the discharge ionizes an inert gas (eg, argon), and the vicinity of the target 51 becomes a plasma state.

[0007] Then, the ionized inert gas ions are attracted to the target 51 by the electric field applied between the target 51 and the anode 54, and the target 51
Is sputtered, thereby forming a thin film on a substrate (not shown).

Here, electrons are ejected from the surface of the target 51 by an electric field applied between the target 51 and the anode 54, and the electrons receive Lorentz force by the magnetic field indicated by the magnetic flux lines 53, and Does not reach and performs a spiral motion at point A in the figure.

For this reason, the inert gas ion density at point A is increased, and point B is intensively sputtered.

[0010]

As described above, FIG.
In the sputtering apparatus shown in FIG. 1, since the inert gas ion density at point A is high, the target 51
The sputtering rate at the point B above becomes the highest, and the point B is worn intensively.

Here, if the wear at the point B is sufficiently advanced, the target cannot be used even if other parts on the target 51 are not worn, and the target utilization efficiency is 10 to 20. %.

The present invention has been made in view of the above-mentioned problems of the conventional technology, and has as its object to provide a sputtering apparatus capable of improving the use efficiency of a target.

[0013]

To achieve the above object, the present invention provides a target placed in an inert gas atmosphere, a magnet placed inside the target, and a target placed around the target. A sputtering apparatus that has an anode to which an electric field is applied between the target and the target to excite discharge, and generates a plasma by a discharge between the target and the anode to sputter the target; , Formed in a cylindrical shape,
The magnet is arranged on a cylinder that is coaxial with a cylindrical axis of the target.

A target disposed in an inert gas atmosphere; a first magnet disposed outside the target; a second magnet disposed inside the target; A sputtering apparatus that is disposed and has an anode to which an electric field is applied between the target and the discharge to excite the discharge, and generates a plasma by a discharge between the target and the anode to sputter the target, The target is formed in a cylindrical shape, and the first and second magnets are arranged on a cylinder that is coaxial with a cylindrical axis of the target.

An electric field is applied between the target placed in an inert gas atmosphere, a magnet placed outside the target, and the target, and an electric field is applied between the target and the target to excite discharge. In a sputtering apparatus that has an anode to be generated and generates a plasma by a discharge between the target and the anode to sputter the target, the target has an outer diameter formed in a columnar shape, and the magnet has the It is characterized in that it is arranged on a cylinder that is coaxial with the cylinder axis of the target.

Further, the target has a space inside.

Further, the target is formed in a cylindrical shape.

Further, the target is formed in a cylindrical shape with one opening closed.

Further, the target is formed in a cylindrical shape.

(Operation) In the present invention configured as described above, when the magnet is arranged only inside the target, or when the magnet is arranged inside and outside the target, the target is cylindrical. And the magnet is arranged on a cylinder that is coaxial with the cylinder axis of the target, and when the magnet is arranged only outside the target, the outer shape of the target is formed in a cylindrical shape, The magnet is placed on a cylinder that is coaxial with the cylinder axis of the target.

As a result, the direction of the magnetic field generated by the magnet coincides with the direction of the cylindrical axis or the cylindrical axis of the target, so that the density of the inert gas ions near the target becomes substantially uniform, and the target surface is locally worn. Is prevented. As a result, the use efficiency of the target can be improved.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a diagram showing a first embodiment of the sputtering apparatus of the present invention.

As shown in FIG. 1, in the present embodiment, a cylindrical cathode box 10 having a target (not shown) disposed on an inert gas atmosphere and having a surface formed thereon, and an anode 20 are provided. It is possible to form thin films on four substrates 30 at the same time.

Here, the cathode box 10 will be described.

FIG. 2 shows the cathode box 1 shown in FIG.
It is a figure for demonstrating the structure of No. 0, (a) is sectional drawing cut | disconnected by the surface parallel to a cylindrical axis, (b) is sectional drawing cut | disconnected by the surface perpendicular | vertical to a cylindrical axis.

As shown in FIG.
Is composed of a cylindrical target 11, a magnet 12, a backing plate 13, a spacer 14, a cover 15, and a cooling passage 16 arranged in an inert gas atmosphere.

The magnet 12 is arranged inside the target 11 and on a cylinder which is coaxial with the cylindrical axis of the target 11.

The magnet 12 may be a columnar magnet or a cylindrical magnet as long as it is arranged on a cylinder that is coaxial with the cylinder axis of the target 11.

The backing plate 13 is used for the target 1
1 is to be held.

The spacer 14 is for insulating the cover 15 from the target 11 and the backing plate 13.

The cooling passage 16 is a passage for flowing cooling water. The cooling passage 16 cools the magnet 12 with the cooling water flowing through the cooling passage 16 and prevents loss of magnetization of the magnet 12 due to heat generated by sputtering of the target 11. prevent.

Hereinafter, a description will be given of a sputtering process in the sputtering apparatus configured as described above.

When an electric field is applied between the target 11 and the anode 20 formed on the surface of the cathode box 10, a discharge is generated, and the discharge ionizes the inert gas to bring the vicinity of the target 11 into a plasma state.

Then, the ionized inert gas ions are attracted to the target 11 by the electric field applied between the target 11 and the anode 20, and the target 11
Is sputtered, whereby a thin film is formed on the substrate 30.

Here, when an aluminum thin film is formed on the substrate 30, a cylindrical aluminum is used as the target 11, and an inert gas such as, for example,
Use argon.

In the present embodiment, since the target 11 is cylindrical and the magnet 12 is disposed on a cylinder coaxial with the cylindrical axis of the target 11, the direction of the cylindrical axis of the target 11 and the direction of the magnetic field by the magnet 12 are different. Will match.

As a result, the inert gas ion density near the target 11 becomes almost uniform, and the plasma density near the target 11 becomes almost uniform.

As a result, the sputtering rate on the entire surface of the target 11 becomes substantially uniform, so that local wear of the target 11 can be prevented and the utilization efficiency of the target 11 can be improved.

(Second Embodiment) FIG. 3 is a view showing a sputtering apparatus according to a second embodiment of the present invention.
In this figure, the same parts as those of the sputtering apparatus shown in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 3, in the present embodiment, a cylindrical target 31 placed in an inert gas atmosphere is used.
, An anode 20, and a magnet 4 disposed outside the target 31 and on a cylinder coaxial with the cylindrical axis of the target 31.
0, so that thin films can be formed on the four substrates 30 at the same time.

This embodiment is different from the first embodiment in that the magnet is arranged inside the target, but the magnet is arranged outside the target.

Hereinafter, a sputtering process in the sputtering apparatus configured as described above will be described.

When an electric field is applied between the target 31 and the anode 20, a discharge is generated, and the discharge ionizes the inert gas to bring the vicinity of the target 31 into a plasma state.

Then, the ionized inert gas ions are attracted to the target 31 by the electric field applied between the target 31 and the anode 20, and
Is sputtered, whereby a thin film is formed on the substrate 30.

Here, when an aluminum thin film is formed on the substrate 30, cylindrical aluminum is used as the target 31, and an inert gas such as, for example,
Use argon.

In this embodiment, since the target 31 is cylindrical and the magnet 40 is arranged on a cylinder coaxial with the cylindrical axis of the target 31, the direction of the cylindrical axis of the target 31 and the direction of the magnetic field by the magnet 40 are different. Will match.

As a result, the inert gas ion density in the vicinity of the target 31 becomes substantially uniform.
The plasma density in the vicinity becomes substantially uniform.

As a result, the sputtering rate on the entire surface of the target 31 becomes substantially uniform, so that local wear of the target 31 can be prevented and the utilization efficiency of the target 31 can be improved.

In the present invention, a configuration using a cylindrical magnet as the magnet 40 may be employed.
A configuration in which a plurality of arc-shaped magnets or a plurality of rod-shaped magnets are arranged side by side on a cylinder that is coaxial with the cylindrical axis of the target 31 may be used.

In the present embodiment, the target has been described as having a cylindrical shape.
When the magnet is arranged only outside the target, as shown in FIG. 6, the target may be cylindrical or may be cylindrical with one opening closed.

FIGS. 6A and 6B are views showing shapes usable as the target 31 shown in FIG. 3, wherein FIG. 6A shows a cylindrical shape, FIG. 6B shows a cylindrical shape, and FIG. FIG. 3 is a view showing a cylindrical shape in which an opening is closed.

(Third Embodiment) FIG. 4 is a view showing a third embodiment of the sputtering apparatus of the present invention.
In this figure, the same parts as those of the sputtering apparatus shown in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 4, in this embodiment, a cylindrical cathode box 10 having a target (not shown) disposed in an inert gas atmosphere and having a surface formed thereon, an anode 20, and a surface of the cathode box 10 And a magnet 41 which is a first magnet disposed outside the target formed on a cylinder coaxial with the cylindrical axis of the target, and forming thin films on the four substrates 30 simultaneously. Is possible.

The cathode box 10 has the configuration shown in FIG. 2, and has a cylindrical target 11 arranged in an inert gas atmosphere, and a target 11 inside the target 11 and coaxial with the cylindrical axis of the target 11. A magnet 12, which is a second magnet disposed on a certain cylinder, and a backing plate 1
3, a spacer 14, a cover 15, and a cooling passage 16
It is composed of

The magnet 12 may be a columnar magnet or a cylindrical magnet as long as it is arranged on a cylinder that is coaxial with the cylinder axis of the target 11.

This embodiment is different from the first embodiment in that magnets are arranged only inside the target, but differs in that magnets are arranged inside and outside the target. Things.

Hereinafter, the sputtering process in the sputtering apparatus configured as described above will be described.

When an electric field is applied between the target 11 and the anode 20 formed on the surface of the cathode box 10, a discharge is generated, and this discharge ionizes an inert gas to bring the vicinity of the target 11 into a plasma state.

Then, the ionized inert gas ions are attracted to the target 11 by the electric field applied between the target 11 and the anode 20, and the target 11
Is sputtered, whereby a thin film is formed on the substrate 30.

Here, when an aluminum thin film is formed on the substrate 30, cylindrical aluminum is used as the target 11, and an inert gas such as, for example,
Use argon.

In this embodiment, the target 11 is cylindrical, the magnet 14 is arranged on a cylinder coaxial with the cylinder axis of the target 11, and the magnet 41 is arranged on a cylinder coaxial with the cylinder axis of the target 11. Therefore, the direction of the cylindrical axis of the target 11 and the direction of the magnetic field generated by the magnets 14 and 41 match.

As a result, the inert gas ion density in the vicinity of the target 11 becomes substantially uniform.
The plasma density in the vicinity becomes substantially uniform.

As a result, the sputtering rate on the entire surface of the target 11 becomes substantially uniform, so that local wear of the target 11 can be prevented and the utilization efficiency of the target 11 can be improved.

In the present invention, a configuration using a cylindrical magnet as the magnet 41 may be employed.
A configuration in which a plurality of arc-shaped magnets or a plurality of rod-shaped magnets are arranged side by side on a cylinder that is coaxial with the cylinder axis of the target 11 may be used.

[0066]

As described above, in the present invention,
When the magnet is arranged only inside the target, or when the magnet is arranged inside and outside the target, the target is formed in a cylindrical shape and the magnet is formed on a cylinder which is coaxial with the cylindrical axis of the target. When the magnet is arranged only outside the target, the outer shape of the target is formed in a cylindrical shape, and the magnet is placed on a cylinder that is coaxial with the cylinder axis of the target. Since the configuration is such that they are arranged, the direction of the cylinder axis or the direction of the cylinder axis of the target coincides with the direction of the magnetic field generated by the magnet.

As a result, the density of the inert gas ions in the vicinity of the target becomes substantially uniform, and local abrasion of the target surface can be prevented, so that the utilization efficiency of the target can be improved.

When an electronic component, an optical component, or the like is manufactured by attaching a metal or dielectric film to a semiconductor, a dielectric, or the like, the manufacturing cost can be significantly reduced by using the sputtering apparatus.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of a sputtering apparatus of the present invention.

FIGS. 2A and 2B are views for explaining the configuration of the cathode box shown in FIG. 1, wherein FIG. 2A is a cross-sectional view taken along a plane parallel to a cylindrical axis, and FIG. FIG.

FIG. 3 is a view showing a second embodiment of the sputtering apparatus of the present invention.

FIG. 4 is a view showing a third embodiment of the sputtering apparatus of the present invention.

FIG. 5 is a diagram showing one configuration example of a conventional sputtering apparatus.

6A and 6B are diagrams showing shapes usable as the target shown in FIG. 3, wherein FIG. 6A shows a cylindrical shape, FIG. 6B shows a cylindrical shape, and FIG. It is a figure showing the closed cylindrical shape.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Cathode box 11, 31 Target 12, 40, 41 Magnet 13 Backing plate 14 Spacer 15 Cover 16 Cooling passage 20 Anode 30 Substrate

Claims (7)

[Claims] An electric field is applied between a target disposed in an inert gas atmosphere, a magnet disposed inside the target, and a periphery of the target, and an electric field is applied between the target and the target to excite discharge. A sputtering apparatus that generates plasma by discharge between the target and the anode to sputter the target, wherein the target is formed in a cylindrical shape, and the magnet is a cylinder of the target. A sputtering apparatus, which is disposed on a cylinder that is coaxial with an axis. 2. A target placed in an inert gas atmosphere, a first magnet placed outside the target, and a second magnet placed inside the target.
An anode disposed around the target, and an electric field applied between the target and the anode to excite discharge,
In a sputtering apparatus for generating plasma by discharge between the target and the anode to sputter the target, the target is formed in a cylindrical shape, and the first and second magnets are cylindrical axes of the target. A sputtering apparatus, which is disposed on a cylinder that is coaxial with the sputtering apparatus. 3. An electric field is applied between a target placed in an inert gas atmosphere, a magnet placed outside the target, and the target, and an electric field is applied between the target and the target to excite discharge. A sputtering apparatus for generating plasma by discharge between the target and the anode to sputter the target, wherein the target has an outer diameter formed in a columnar shape, and the magnet includes: A sputtering apparatus, wherein the sputtering apparatus is arranged on a cylinder that is coaxial with a cylindrical axis of a target. 4. The sputtering apparatus according to claim 3, wherein the target has a space inside. 5. The sputtering apparatus according to claim 4, wherein the target is formed in a cylindrical shape. 6. The sputtering apparatus according to claim 4, wherein the target is formed in a cylindrical shape with one opening closed. 7. The sputtering apparatus according to claim 3, wherein the target is formed in a column shape.