JP2001291637A - Spherical capacitor, its manufacturing method, its mounting structure, and wiring board and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spheric capacitor, which can prevent the occurrence of stress concentration at part of the capacitor, when the capacitor is embedded in the body of a wiring board made of a resin, and so on. SOLUTION: The spherical capacitor which can prevent the occurrence of stress concentration at part of the capacitor is formed along the surface of a spherical core 10 by successively forming a first electrode layer 20, a dielectric layer 30, and a second electrode layer 40 on the surface of the core 10. The electrode section 22 of the first electrode layer 20 is exposed on the outside of the dielectric layer 30 and second electrode layer 40. In addition, the electrode section s22 and 42 of the first electrode layer 20 and the second electrode layer 40, formed as the uppermost layer on the core 10, are made connectable with an external electronic circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spherical capacitor for use in an electronic device such as a semiconductor device, a method for manufacturing a spherical capacitor for forming the capacitor, and a method for manufacturing a spherical capacitor in which the spherical capacitor is mounted on an electronic device. The present invention relates to a mounting structure, a wiring board provided with a spherical capacitor, and a method of manufacturing a wiring board for manufacturing the wiring board.

[0002]

2. Description of the Related Art In recent years, semiconductor chips have been increased in frequency,
As the speed has been further increased, noise countermeasures for preventing the semiconductor chip from malfunctioning have become important. Electronic components that eliminate low-frequency signals for noise suppression include:
A capacitor is used. The capacitor for eliminating the low-frequency signal is mounted on the front surface or the back surface of the wiring board near the position where the semiconductor chip is mounted. The capacitor and the semiconductor chip are connected via a wiring circuit formed on the wiring board. The capacitor prevents low frequency noise from entering the semiconductor chip.

[0003]

However, the low frequency noise eliminating capacitor mounted on the wiring board is connected to the semiconductor chip via a long wiring circuit formed on the wiring board. The inductance value of the wiring circuit for connecting the capacitor and the semiconductor chip is large. Therefore, a high-frequency signal transmitted between the semiconductor chip and the capacitor via the wiring circuit has been significantly deteriorated. As a result, a high-frequency signal cannot be efficiently transmitted between the capacitor and the semiconductor chip with little deterioration.

As a means for solving such a problem, a method of embedding the above-mentioned capacitor for eliminating low-frequency noise in a wiring board body near a semiconductor chip can be considered. According to this method, the capacitor is arranged near the semiconductor chip, and the wiring circuit connecting the capacitor and the semiconductor chip can be shortened. Then, it is possible to keep the inductance value of the wiring circuit small and prevent the high-frequency signal transmitted through the wiring circuit from being significantly deteriorated.

A conventional general capacitor is formed by laminating a plurality of ceramic plates on which electrode layers are formed, or is formed by providing a silicon substrate with a high dielectric constant insulating film or an electrode layer. It has a sharp edged edge on its outside. Therefore, when the capacitor is buried in a wiring board body made of resin or the like, stress based on the difference in the coefficient of thermal expansion between the wiring board body and the capacitor concentrates on the outer corners sharpened in an edge shape. Join
Cracks occur in the wiring board body made of resin or the like surrounding the outer corner of the capacitor. Then, the airtightness of the wiring board is impaired, or a part of the wiring circuit formed on the wiring board is broken. Therefore, the above-mentioned conventional general capacitor cannot be embedded in the wiring board body near the semiconductor chip.

[0006] The present invention can solve such problems.
A spherical capacitor that can be embedded in a wiring board body near an electronic component such as a semiconductor chip, wherein a spherical capacitor capable of preventing stress concentration from being generated in a part thereof; and a spherical capacitor for forming the spherical capacitor. A manufacturing method, a mounting structure of a spherical capacitor in which a spherical capacitor is mounted on an electronic device, and a wiring board provided with a spherical capacitor capable of preventing stress concentration from occurring in a part thereof, the spherical capacitor being To provide a wiring board capable of transmitting a high-frequency signal with little deterioration between the wiring board and the wiring circuit of the wiring board or the electronic circuit of the electronic component, and a method of manufacturing the wiring board for manufacturing the wiring board. I have.

[0007]

In order to achieve the above object, a first spherical capacitor according to the present invention comprises a first electrode layer, a dielectric layer, and a second layer on a surface of a substantially spherical core. An electrode layer is formed in this order, and the electrode portion of the first electrode layer is exposed outside the dielectric layer and the second electrode layer.

In the first spherical capacitor, a capacitor can be formed along the surface of the core by the first electrode layer, the dielectric layer, and the second electrode layer which are sequentially formed on the surface of the core. . In addition, since the capacitor can be formed along the surface of the substantially spherical core, the area occupied by the capacitor can be increased compared to the case where the capacitor is formed along the surface of a plate-shaped ceramic plate or silicon plate. , The capacity of the capacitor can be increased. At the same time, when forming a capacitor having the same capacitance, the occupied volume of the capacitor formed along the surface of the substantially spherical core is compared with that of the capacitor formed along the surface of the ceramic plate or silicon plate. , Can be reduced. Further, the size of the capacitor can be reduced.
In addition, since the external shape of the capacitor is substantially spherical, the capacitor is embedded in a wiring substrate body made of a flexible resin, and the wiring substrate body portion made of the resin in which the capacitor is embedded is bent into an L-shape or the like. Even if
This prevents excessive stress from being concentrated and applied to a part between the almost spherical capacitor and the surrounding wiring board body made of resin, and cracks the resin wiring board body around the capacitor. Etc. can be prevented from occurring. The connection formed on the wiring board is connected to the electrode portion of the first electrode layer exposed outside the dielectric layer and the second electrode layer or to the electrode portion of the second electrode layer formed on the uppermost layer of the core surface. Terminals or connection terminals provided on electronic components can be connected.

Further, in the first spherical capacitor, it is preferable that the peripheral edge of the second electrode layer is disposed so as to be recessed inside the peripheral edge of the dielectric layer. .

In this case, the periphery of the dielectric layer can be exposed between the periphery of the second electrode layer and the first electrode layer outside the periphery. Then, it is possible to prevent the second electrode layer from being electrically short-circuited to the first electrode layer over the periphery of the dielectric layer.

In the first spherical capacitor, it is preferable that the core has a structure made of silicon.

In this case, the first electrode layer, the dielectric layer, and the second electrode layer can be easily and accurately laminated on the surface of the core made of silicon in this order.

Further, the second spherical capacitor of the present invention comprises:
A dielectric layer and a second electrode layer are laminated and formed in this order on the surface of a substantially spherical core constituting the first electrode, and the electrode portion of the first electrode is formed of the dielectric layer and the second electrode layer. 2
It is characterized in that it is exposed outside the electrode layer.

In the second spherical capacitor, the capacitor is substantially composed of a core made of a conductor constituting the first electrode, a dielectric layer sequentially formed on the surface of the core, and a second electrode layer. It can be formed along the periphery of a spherical core. Also, since the capacitor can be formed along the periphery of the substantially spherical core, the area occupied by the capacitor can be increased compared to the case where the capacitor is formed along the surface of a plate-shaped ceramic plate or silicon plate. , The capacity of the capacitor can be increased. At the same time, when forming a capacitor having the same capacity, the occupied volume of the capacitor formed along the periphery of the substantially spherical core is compared with that of the capacitor formed along the surface of the ceramic plate or silicon plate. , Can be reduced. And
The size of the capacitor can be reduced. In addition, since the external shape of the capacitor is substantially spherical, the capacitor is embedded in a wiring substrate body made of a flexible resin, and the wiring substrate body portion made of the resin in which the capacitor is embedded is bent into an L-shape or the like. In this case, excessive stress is prevented from being concentrated on a portion between the substantially spherical capacitor and the wiring board body portion made of resin around the capacitor, and the wiring made of resin around the capacitor is prevented. Cracks and the like can be prevented from occurring in the substrate body.
In addition, the first exposed outside the dielectric layer and the second conductor layer
A connection terminal formed on the wiring board or a connection terminal provided on the electronic component can be connected to the electrode portion of the electrode or the electrode portion of the second electrode layer formed on the uppermost layer of the core surface.

Further, in the second spherical capacitor, it is preferable that the periphery of the second electrode layer is disposed so as to be recessed inside the periphery of the dielectric layer. .

In this case, the periphery of the dielectric layer can be exposed between the periphery of the second electrode layer and the first electrode outside the periphery. Then, it is possible to prevent the second electrode layer from being in a state of being electrically short-circuited to the first electrode over the periphery of the dielectric layer.

Further, in the second spherical capacitor, it is preferable that the core made of the conductor has a structure made of copper.

In this case, the core made of copper can be used for the first electrode. And on the surface of the core,
It is not necessary to separately form the first electrode layer.
At the same time, the performance of the capacitor can be kept good by using a core made of copper having a low conductor resistance value as the first electrode of the capacitor.

A first method of manufacturing a spherical capacitor according to the present invention includes the following steps. a. Forming a first electrode layer on the surface of the substantially spherical core by sputtering, CVD, or metal plating; b. Forming a dielectric layer on the surface of the first electrode layer by sputtering, CVD, or anodizing by exposing the electrode portion of the first electrode layer outside the dielectric layer; c. A second electrode layer is formed on the surface of the dielectric layer by sputtering, CVD, or metal plating by exposing the electrode portion of the first electrode layer outside the second electrode layer and the dielectric layer. Process.

In this first method of manufacturing a spherical capacitor, sputtering, CVD (Chemical V)
A first electrode layer, a dielectric layer, and a second electrode layer can be sequentially formed on the surface of the core by a dry process such as a chemical vapor deposition (CVD) method. Then, the first electrode layer, the dielectric layer, and the second electrode layer are formed on the surface of the core by a wet process such as plating.
As compared with the case where the layers are sequentially formed, a cleaning step which is troublesome can be eliminated.

In the first method of manufacturing a spherical capacitor, in the step b, the lower part of the core on which the electrode portion of the first electrode layer is formed is placed on a first positioning jig provided on a first positioning jig. A first positioning jig is fitted in the recess or the first through hole to support the intermediate portion of the surface where the first electrode layer of the core is formed at the periphery of the opening of the first recess or the first through hole. Positioning the first positioning jig, a dielectric layer is formed on the surface of the core protruding above the first positioning jig, on which the first electrode layer is formed, by sputtering or CVD. The lower portion of the core where the electrode portion of the one electrode layer is exposed, and the lower portion of the core where the dielectric layer is formed around the lower portion of the core have an opening whose diameter is larger than that of the first recess or the first through hole. Into the second depression or the second through hole provided in the second positioning jig of Supporting an intermediate portion of the surface of the core in which the dielectric layer is formed on the periphery of the opening of the recess or the second through-hole, positioning the core on the second positioning jig, and above the second positioning jig It is preferable that the second electrode layer is formed on the surface of the protruding core on which the dielectric layer is formed by sputtering or CVD.

In this case, in the step b, the first
A dielectric layer is formed by sputtering or CVD on the surface of the core protruding above the positioning jig on which the first electrode layer is formed.
When formed by the method, the dielectric layer is formed on the electrode portion of the first electrode layer formed on the lower surface of the core inserted into the first recess or the first through hole of the first positioning jig. Is the first
This can be prevented by using a positioning jig as a mask. Then, the electrode portion of the first electrode layer formed on the lower surface of the core can be reliably exposed outside the dielectric layer.
In the step c, when the second electrode layer is formed by sputtering or CVD on the surface of the core on which the dielectric layer of the core projecting above the second positioning jig is formed,
The lower part of the core where the electrode portion of the first electrode layer fitted in the second depression or the second through hole of the second positioning jig is exposed, and the lower part of the core where the dielectric layer around the core is formed, The formation of the second electrode layer can be prevented by using the second positioning jig as a mask. Then, the electrode portion of the first electrode layer formed on the lower surface of the core can be reliably exposed outside the dielectric layer and the second electrode layer. At the same time, the periphery of the dielectric layer can be reliably exposed between the electrode portion of the first electrode layer and the second electrode layer outside the electrode portion. Then, it is possible to prevent the second electrode layer from being electrically short-circuited to the electrode portion of the first electrode layer over the periphery of the dielectric layer.

A second method of manufacturing a spherical capacitor according to the present invention includes the following steps. a. A dielectric layer is formed on the surface of a substantially spherical core constituting the first electrode, and the first layer is formed outside the dielectric layer.
A step of exposing an electrode portion of the electrode and forming the electrode by sputtering, CVD, or anodization. b. Forming a second electrode layer on the surface of the dielectric layer by sputtering, CVD, or metal plating by exposing the electrode portion of the first electrode outside the second electrode layer and the dielectric layer; .

In the second method for manufacturing a spherical capacitor, a dielectric layer and a second electrode layer can be sequentially formed on the core surface by a dry process such as sputtering or CVD. Then, as compared with the case where the dielectric layer and the second electrode layer are sequentially formed on the surface of the core by a wet process such as plating, a complicated cleaning step can be eliminated.

In the second method of manufacturing a spherical capacitor, in the step (a), the lower part of the core constituting the electrode portion of the first electrode may be replaced with a first depression or a depression provided in a first positioning jig. The first recess or the first recess is inserted into the first through hole.
An intermediate part of the surface of the core is supported on the periphery of the opening of the through hole, the core is positioned on the first positioning jig, and a dielectric layer is formed on the surface of the core protruding above the first positioning jig. Formed by sputtering or CVD, and in the step b, the lower portion of the core where the electrode portion of the first electrode is exposed, and the lower portion of the core where the surrounding dielectric layer is formed,
The diameter of the opening is fitted into the second recess or the second through hole provided in the second positioning jig having a diameter larger than that of the first recess or the first through hole, and the second recess or the second through hole is fitted. Supporting an intermediate portion of the surface on which the dielectric layer of the core is formed at the periphery of the opening, positioning the core on the second positioning jig, and projecting the dielectric of the core protruding above the second positioning jig. It is preferable that the second electrode layer is formed on the surface on which the layer is formed by sputtering or CVD.

In this case, in the step a, the first
When a dielectric layer is formed on the surface of the core projecting above the positioning jig by sputtering or CVD,
The dielectric layer is formed below the core constituting the electrode portion of the first electrode inserted into the first recess or the first through hole of the first positioning jig, using the first positioning jig as a mask. make use of,
Can be prevented. Then, the lower portion of the core constituting the electrode portion of the first electrode layer can be reliably exposed outside the dielectric layer. In the step b, when the second electrode layer is formed by sputtering or CVD on the surface of the core on which the dielectric layer of the core projecting above the second positioning jig is formed, A second electrode layer is formed at a lower portion of the core where the electrode portion of the first electrode inserted into the second recess or the second through hole is exposed, and at a lower portion of the core around which the dielectric layer is formed. Can be prevented by using the second positioning jig as a mask. And the first
The lower part of the core constituting the electrode part of the electrode can be reliably exposed outside the dielectric layer and the second electrode layer. At the same time, the periphery of the dielectric layer can be reliably exposed between the electrode portion of the first electrode and the second electrode layer outside the electrode portion. Then, it is possible to prevent the state in which the second electrode layer is electrically short-circuited to the electrode portion of the first electrode over the dielectric layer.

The mounting structure of a spherical capacitor according to the present invention comprises a first connection terminal for connecting electronic components formed on a wiring board;
A first or second spherical capacitor of the present invention is interposed between a second connection terminal provided on an electronic component mounted on a wiring board, and one of the first electrode layers of the capacitor is connected to the first or second spherical capacitor. An electrode portion of the electrode or the second electrode layer is connected to the first connection terminal using a solder paste or a conductive adhesive, and the other second electrode layer, the first electrode layer or the first electrode of the capacitor is provided. Is connected to the second connection terminal using a solder paste or a conductive adhesive.

In the mounting structure of the spherical capacitor, the first or second spherical capacitor of the present invention is connected to the first connection terminal formed on the substrate and the second connection terminal provided on the electronic component.
It can be arranged adjacent to the connection terminal. Then, the first connection terminal can be directly connected to the electrode portion of one of the first electrode layer, the first electrode, or the second electrode layer of the spherical capacitor using a solder paste or a conductive adhesive. At the same time, the second connection terminal and the other second terminal of the spherical capacitor
The electrode layer, the first electrode layer, or the electrode portion of the first electrode can be directly connected using a solder paste or a conductive adhesive.
Then, the inductance value of the connection portion between the first connection terminal or the second connection terminal and the spherical capacitor is suppressed to a small value,
A high-frequency signal can be efficiently transmitted between the first connection terminal or the second connection terminal and the spherical capacitor with little deterioration. Also, the first connection terminal of the wiring board and the second connection terminal of the electronic component
Instead of the solder balls for connecting to the connection terminals, the first or second spherical capacitors of the present invention can be used. And the troublesome work of embedding the first or second spherical capacitor in the substrate near the electronic component can be eliminated.

The first wiring board of the present invention is the first wiring board of the present invention.
Alternatively, the second spherical capacitor is embedded in the wiring board body below the first connection terminal for connecting electronic components formed on the surface of the wiring board body, and one of the first electrode layer and the first electrode of the capacitor is provided. Or, the electrode portion of the second electrode layer is connected to a wiring circuit formed inside the wiring substrate body,
The other second electrode layer, the first electrode layer or the first
An electrode portion of the electrode is connected to the first connection terminal via a conductor via formed in the wiring board body.

In the first wiring board, the first or second spherical capacitor of the present invention can be embedded in the wiring board body near the first connection terminal for connecting electronic components. And
The electrode portion of one of the first electrode layer, the first electrode, or the second electrode layer of the capacitor can be connected to a wiring circuit formed inside the wiring board body with a short distance. At the same time, the other second electrode layer, the first electrode layer, or the electrode portion of the first electrode of the capacitor can be connected to the first connection terminal of the wiring board via the conductor via in a short distance. Then, the inductance value of the connection portion between the second connection terminal of the electronic component or the wiring circuit of the wiring board and the capacitor connected to the first connection terminal of the wiring substrate is suppressed to be low, and the electronic circuit or wiring of the capacitor and the electronic component is reduced. It is possible to prevent deterioration of the high-frequency signal transmitted between the wiring circuit of the substrate and the circuit.

The second wiring board of the present invention is the first wiring board of the present invention.
Alternatively, a second spherical capacitor is provided on the wiring board main body, and one of the second electrode layers of the capacitor on the outside of the wiring board main body.
The electrode layer or the electrode portion of the first electrode is buried so as to protrude,
The second electrode layer, the first electrode layer, or the electrode portion of the first electrode serves as a first connection terminal for connecting an electronic component, and the other first electrode layer, the first electrode, or the second electrode layer of the capacitor. Is connected to a wiring circuit formed inside the wiring board main body.

In the second wiring board, one second electrode layer of the capacitor protruding above the wiring board body,
The first electrode layer or the electrode portion of the first electrode can be directly connected to the second connection terminal of the electronic component using a solder paste or a conductive adhesive. At the same time, the other first of the capacitor
The electrode portion of the electrode layer, the first electrode, or the second electrode layer can be connected to a wiring circuit formed inside the wiring board body with a short distance. Then, the inductance value of the connection portion between the capacitor and the second connection terminal of the electronic component or the wiring circuit inside the wiring board main body is kept low, and the inductance is transmitted between the capacitor and the electronic circuit of the electronic component or the wiring circuit of the board. Deterioration of high frequency signals can be prevented.

The first method of manufacturing a wiring board according to the present invention includes the following steps. a. The electrode portion of one of the first or second spherical capacitor of the present invention and the electrode portion of the first or second electrode layer is connected to a wiring circuit formed on the surface of the wiring board body by solder paste or conductive paste. A step of connecting using an adhesive. b. A step of covering the capacitor connected to the wiring circuit and the surface of the wiring board body around the capacitor with an insulating resin layer. c. Forming a conductor via connected to the other second electrode layer, the first electrode layer, or the electrode portion of the first electrode of the capacitor in the resin layer by exposing an upper end thereof to a surface of the resin layer; d. Forming a first connection terminal connected to the upper end of the conductive via or a wiring circuit having the first connection terminal on the surface of the resin layer;

A second method of manufacturing a wiring board according to the present invention includes the following steps. a. The electrode portion of one of the first or second spherical capacitor of the present invention and the electrode portion of the first or second electrode layer is connected to a wiring circuit formed on the surface of the wiring board body by solder paste or conductive paste. A step of connecting using an adhesive. b. The capacitor connected to the wiring circuit and the surface of the wiring substrate body surrounding the capacitor are covered with an insulating resin layer, and the other second electrode layer, first electrode layer or first electrode layer of the capacitor is provided above the resin layer. A step of projecting an electrode portion of the electrode and using the second electrode layer, the first electrode layer, or the electrode portion of the first electrode as a first connection terminal for connecting an electronic component.

In the method of manufacturing the first or second wiring board, the first or second wiring board of the present invention is formed by using a conventional general-purpose general-purpose for manufacturing a CSP (abbreviation of chip size package) using a build-up board. It can be easily and accurately formed using the technique described above and the equipment used conventionally.

[0036]

FIG. 1 shows a preferred embodiment of the first spherical capacitor of the present invention, and FIG. 1 is a front sectional view thereof. Hereinafter, the first spherical capacitor will be described.

In the first spherical capacitor shown in the figure, a first electrode layer 20, a dielectric layer 30, and a second electrode layer 40 are laminated on the surface of a substantially spherical core 10 in this order. . The electrode portion 22 of the first electrode layer formed on the surface portion below the core 10 is exposed outside the dielectric layer 30 and the second electrode layer 40.

A capacitor is formed along the surface of the core 10 by the first electrode layer 20, the dielectric layer 30, and the second electrode layer 40, which are sequentially formed on the surface of the core 10. . Further, the capacitor is formed along the surface of the core 10 having a substantially spherical shape, and is configured so that the area occupied by the capacitor can be increased and the capacitance of the capacitor can be increased. With it
The capacitor is formed along the surface of the substantially spherical core 10, and is configured so that the volume occupied by the capacitor can be reduced and the capacitor can be made compact. Further, when the capacitor is embedded in a wiring board body (not shown) made of a flexible resin and the wiring board body made of the resin is bent, the capacitor is formed of a capacitor having a substantially spherical outer shape and a resin around the capacitor. The configuration is such that excessive stress is prevented from being concentrated and applied to a portion between the wiring substrate body portion. Also,
The wiring board is provided on the electrode portion 22 of the first electrode layer exposed outside the dielectric layer 30 and the second electrode layer 40 or the electrode portion 42 of the second electrode layer formed on the uppermost layer of the surface of the core 10. Or connection terminals of electronic components.

In addition, the periphery of the second electrode layer 40 is disposed so as to be recessed inside the periphery of the dielectric layer 30.
The periphery 32 of the dielectric layer is exposed between the electrode portion 22 of the first electrode layer exposed outside the second electrode layer 40 and the dielectric layer 30 and the second electrode layer 40 outside the electrode portion 22. ing. Then, the second electrode layer 40 is configured to be able to prevent a state in which the second electrode layer 40 is electrically short-circuited to the electrode portion 22 of the first electrode layer over the peripheral edge 32 of the dielectric layer.

The first spherical capacitor shown in FIG. 1 is configured as described above. In the first spherical capacitor, the peripheral edge 32 of the dielectric layer exposed outside the second electrode layer 40 can be continuously covered by the second electrode layer 40 in some cases. In this case, it is needless to say that the second electrode layer 40 is not electrically short-circuited with the electrode portion 22 of the first electrode layer exposed outside the dielectric layer 30.

It is preferable that the core 10 has a structure made of silicon. The first electrode layer 20 and the dielectric layer 30 are formed on the surface of the core 10 made of silicon.
And the second electrode layer 40 may be easily and accurately stacked in this order. The core 10 can be formed using resin, ceramic, or the like.
Also in this case, a capacitor having substantially the same operation as described above can be formed.

FIG. 2 shows a preferred embodiment of the second spherical capacitor of the present invention, and FIG. 2 is a front sectional view thereof.
Hereinafter, the second spherical capacitor will be described.

In the second spherical capacitor shown in the figure, a dielectric layer 30 and a second electrode layer 40 are laminated in this order on the surface of a core 10 made of a substantially spherical conductor constituting the first electrode 14. Have been. The lower part of the core 10 constituting the electrode part 12 of the first electrode is exposed outside the dielectric 30 and the second electrode layer 40.

The first electrode 1 comprising the core 10
4 and a dielectric layer 3 sequentially laminated on the surface of the core 10
0 and the second electrode layer 40 form a capacitor around the core 10. Further, the capacitor is formed along the periphery of the substantially spherical core 10, and is configured so that the occupied area of the capacitor can be increased and the capacitance of the capacitor can be increased. At the same time, a capacitor is formed along the periphery of the substantially spherical core 10, so that the volume occupied by the capacitor can be reduced and the capacitor can be made compact. Further, when the capacitor is embedded in a wiring board body (not shown) made of a flexible resin and the wiring board body made of the resin is bent, the capacitor is formed of a capacitor having a substantially spherical outer shape and a resin around the capacitor. The configuration is such that excessive stress is prevented from being concentrated and applied to a portion between the wiring substrate body portion.
In addition, the electrode portion 12 of the first electrode exposed outside the dielectric layer 30 and the second electrode layer 40 or the electrode portion 42 of the second electrode layer formed on the uppermost layer of the surface of the core 10 is attached to the wiring board. It is configured such that connection terminals or connection terminals of electronic components can be connected.

In addition, the periphery of the second electrode layer 40 is disposed so as to be recessed inside the periphery of the dielectric layer 30.
The peripheral edge 32 of the dielectric layer is exposed between the electrode portion 12 of the first electrode and the second electrode layer 40 outside the electrode portion 12. The second electrode layer 40 is configured to be able to prevent the second electrode layer 40 from being electrically short-circuited to the electrode portion 12 of the first electrode over the peripheral edge 32 of the dielectric layer.

The second spherical capacitor shown in FIG. 2 is configured as described above. In this second spherical capacitor, the peripheral edge 32 of the dielectric layer exposed outside the second electrode layer 40 can be continuously covered by the second electrode layer 40 in some cases. In that case,
The second electrode layer 40 has a first electrode layer exposed outside the dielectric layer 30.
Of course, care must be taken not to electrically short-circuit the electrode portions 12 of the electrodes.

In the second spherical capacitor, the core 10 preferably has a structure made of copper. Then, the core 10 made of copper is connected to the first electrode 14.
Is preferably used. Then, it is preferable to eliminate the need to separately form the first electrode layer 20 on the surface of the core 10. At the same time, it is preferable to use the core 10 made of copper having a low conductor resistance value as the first electrode 14 of the capacitor to keep the performance of the capacitor good.

Next, a preferred embodiment of the method for manufacturing the first spherical capacitor of the present invention shown in FIG. 1 will be described with reference to FIG.
A method of manufacturing the first spherical capacitor of the present invention shown in FIG. 5 will be described.

In the first method of manufacturing a spherical capacitor, as shown in FIG.
The first electrode layer 20 on the surface of
It is formed by a method or a metal plating method. Then, the step a of the first method for manufacturing a spherical capacitor of the present invention is performed.

Next, as shown in FIG. 4, a dielectric layer 30 is formed on the surface of the first electrode layer 20, and an electrode portion 22 of the first electrode layer is exposed outside the dielectric layer.
It is formed by a CVD method or an anodizing method. Then, step b of the first method for manufacturing a spherical capacitor of the present invention is performed.

Thereafter, as shown in FIG.
On the surface of the second electrode layer 40, a second electrode layer 40 is formed by sputtering, a CVD method, or a metal plating method by exposing the electrode portion 22 of the first electrode layer outside the second electrode layer and the dielectric layer 30. ing. Then, the step c of the first method for manufacturing a spherical capacitor of the present invention is performed.

The method of manufacturing the first spherical capacitor shown in FIGS. 3 to 5 comprises the above steps. In the first method for manufacturing a spherical capacitor, the first electrode layer 20, the dielectric layer 30, and the second electrode layer 4 are formed on the surface of the core 10 by a dry process such as sputtering or CVD.
0 can be sequentially laminated. Then, the first electrode layer 20 is formed on the surface of the core by a wet process such as plating.
As compared with the case where the dielectric layer 30 and the second electrode layer 40 are sequentially stacked, a complicated cleaning step can be eliminated.

In the first method of manufacturing a spherical capacitor, in the step b, as shown in FIG. 4, the lower part of the core 10 on which the electrode portion 22 of the first electrode layer is formed is removed.
The first positioning jig 100 is fitted into a first recess 102 or a first through hole (indicated by a broken line in the drawing) 104 provided on the first positioning jig 100, and a peripheral edge of an upper end opening of the first recess or the first through hole. It is preferable to support an intermediate part of the surface of the core 10 on which the first electrode layer 20 is formed. Then, the core 10 is moved to the first positioning jig 10.
Preferably, the dielectric layer 30 is formed by sputtering or CVD on the surface of the core 10 on which the first electrode layer 20 is formed, which is positioned above the first positioning jig and positioned above the first positioning jig. In the step c, as shown in FIG. 5, the lower portion of the core 10 where the electrode portion 22 of the first electrode layer is exposed and the lower portion of the core 10 where the dielectric layer 30 is formed around the lower portion. The diameter of the upper end opening provided in the second positioning jig 110 is the first recess 102 or the first through hole 10.
4 is inserted into a second recess 113 or a second through hole (indicated by a broken line in the figure) 115 having a diameter larger than that of the core 10, and the dielectric of the core 10 is placed around the upper end opening of the second recess or the second through hole. It is preferable to support a middle part of the surface on which the body layer 30 is formed. Then, the core 10 is positioned on the second positioning jig 110, and the dielectric layer 3 of the core 10 protruding above the second positioning jig.
The second electrode layer 40 may be formed on the surface where 0 is formed by sputtering or CVD.

Then, in the step b, when the dielectric layer 30 is formed by sputtering or CVD on the surface of the core protruding above the first positioning jig 100 on which the first electrode layer 20 is formed. Core 10 fitted in the first recess 102 or the first through hole 104 of the first positioning jig
The formation of the dielectric layer 30 on the electrode portion 22 of the first electrode layer formed on the lower surface of the first positioning jig 100
May be used as a mask to prevent this. Then, it is preferable that the electrode portion 22 of the first electrode layer formed on the lower surface of the core 10 can be reliably exposed to the outside of the dielectric layer 30. In the step c, when the second electrode layer 40 is formed by sputtering or CVD on the surface of the core 10 protruding above the second positioning jig 110 on which the dielectric layer 30 is formed, (2) The lower portion of the core 10 where the electrode portion 22 of the first electrode layer is fitted into the second recess 113 or the second through hole 115 of the positioning jig, and the core 10 on which the dielectric layer 30 is formed. The formation of the second electrode layer 40 in the lower part of the second positioning jig 11
It is better to use 0 as a mask to prevent this. And the core 1
0 of the first electrode layer formed on the lower surface of
It is preferable to be able to reliably expose the dielectric layer 30 and the second electrode layer 40 to the outside. At the same time, it is preferable that the peripheral edge 32 of the dielectric layer can be reliably exposed between the electrode portion 22 of the first electrode layer and the second electrode layer 40 outside the electrode portion 22. Then, it is preferable that the second electrode layer 40 be prevented from being electrically short-circuited to the electrode portion 22 of the first electrode layer over the peripheral edge 32 of the dielectric layer.

Next, a preferred embodiment of the second method for manufacturing a spherical capacitor of the present invention shown in FIG.
And the second method of manufacturing the spherical capacitor of the present invention shown in FIG. 7 will be described.

In this second method of manufacturing a spherical capacitor, as shown in FIG. 6, a dielectric layer 3 is formed on the surface of a core 10 made of a substantially spherical conductor constituting a first electrode 14.
No. 0 is formed by sputtering, CVD, or anodizing by exposing the electrode portion 12 of the first electrode outside the dielectric layer. Then, the step a of the second method for manufacturing a spherical capacitor of the present invention is performed.

Thereafter, as shown in FIG.
0, the second electrode layer 40 is exposed, and the electrode portion 12 of the first electrode is exposed outside the second electrode layer and the dielectric layer 30,
It is formed by sputtering, CVD or metal plating. Then, step b of the second method for manufacturing a spherical capacitor of the present invention is performed.

The method for manufacturing the second spherical capacitor shown in FIGS. 6 and 7 includes the above steps. In the second method for manufacturing a spherical capacitor, the dielectric layer 30 and the second electrode layer 40 can be sequentially formed on the surface of the core 10 by a dry process such as sputtering or CVD. And, by a wet process such as plating,
As compared with the case where the dielectric layer 30 and the second electrode layer 40 are sequentially formed on the surface of the core 10, a complicated cleaning step can be eliminated.

In the method of manufacturing the second spherical capacitor, in the step a, as shown in FIG. 6, the lower portion of the core 10 constituting the electrode portion 12 of the first electrode is moved to the first position.
A core is fitted into a first recess 102 or a first through hole (indicated by a broken line in the figure) 104 provided in the positioning jig 100 and a peripheral edge of an upper end opening of the first recess or the first through hole is provided. 1
It is good to support the middle part of the surface of zero. Then, the core 10 is preferably positioned on the first positioning jig 100, and the dielectric layer 30 is formed on the surface of the core 10 protruding above the first positioning jig by sputtering or CVD. In the step b, as shown in FIG. 7, the lower portion of the core 10 where the electrode portion 12 of the first electrode is exposed and the lower portion of the core 10 where the dielectric layer 30 is formed around the lower portion. The diameter of the upper end opening provided in the second positioning jig 110 is larger than the diameter of the first recess 102 or the first through hole 104 or the second recess 113 or the second through hole (indicated by a broken line in the drawing). ) 115 to support an intermediate portion of the surface of the core 10 where the dielectric layer 30 is formed on the periphery of the upper opening of the second depression or the second through hole. Then, the core 10 is positioned on the second positioning jig 110, and the second electrode layer 40 is sputtered on the surface of the core 10 protruding above the second positioning jig on which the dielectric layer 30 is formed. Alternatively, it may be formed by a CVD method.

Then, in the step a, when the dielectric layer 30 is formed on the surface of the core projecting above the first positioning jig 100 by sputtering or CVD, the first positioning jig of the first positioning jig 100 Recess 102 or first through hole 1
04 on the first electrode portion 12 below the core 10
The formation of the dielectric layer 30 is performed by the first positioning jig 10.
It is better to use 0 as a mask to prevent this. And the core 1
It is preferable that the electrode portion 12 of the first electrode below the zero can be reliably exposed to the outside of the dielectric layer 30.
In the step b, the second positioning jig 110
When the second electrode layer 40 is formed by sputtering or CVD on the surface of the core 10 on which the dielectric layer 30 is formed, the second recess 11 of the second positioning jig is formed.
3 or the electrode portion 1 of the first electrode fitted in the second through hole 115
The second electrode layer 40 is formed on the lower portion of the core 10 where the second dielectric layer 30 is formed,
Is preferably formed using the second positioning jig 110 as a mask. Then, the electrode portion 12 of the first electrode below the core 10 is connected to the dielectric layer 30 and the second electrode layer 4.
It is good to be able to be reliably exposed to the outside of 0. At the same time, the peripheral edge 32 of the dielectric layer may be reliably exposed between the electrode portion 12 of the first electrode and the second electrode layer 40 outside the electrode portion 12. And the peripheral edge 3 of the dielectric layer.
2, the second electrode layer 40 becomes the electrode portion 1 of the first electrode.
It is preferable that an electrical short circuit can be prevented.

FIGS. 8 to 11 show a preferred embodiment of the mounting structure of the spherical capacitor of the present invention, and FIGS. 8 to 11 are explanatory diagrams of the structure. Hereinafter, a mounting structure of the spherical capacitor will be described.

In the mounting structure of the spherical capacitor shown in the figure, the first connection terminal 52 formed on the wiring board 50 and the electronic component 6
The first spherical capacitor of the present invention shown in FIG. 1 or the second spherical capacitor of the present invention shown in FIG. 2 is interposed between the second connection terminal 62 provided at 0. Electrode part 2 of one first electrode layer of first or second spherical capacitor
2, the electrode portion 12 of the first electrode or the electrode portion 42 of the second electrode layer
Are connected to the first connection terminals 52 of the wiring board using a solder paste or a conductive adhesive. 1st or 2nd
The electrode portion 42 of the other second electrode layer, the electrode portion 22 of the first electrode layer, or the electrode portion 12 of the first electrode of the spherical capacitor is connected to the second connection terminal 62 of the electronic component by a solder paste or a conductive adhesive. Are connected using

The mounting structure of the spherical capacitor shown in FIGS. 8 to 11 is configured as described above. In the mounting structure of the spherical capacitor, as shown in FIGS. 8 to 11, the first or second spherical capacitor is connected to the first connection terminal 52 of the wiring board and the second connection terminal 6 of the electronic component.
2 and can be arranged adjacent to each other. Then, the electrode portion 22 of the first electrode layer, the electrode portion 12 of the first electrode, or the electrode portion 42 of the second electrode layer of the first or second capacitor is connected to the first connection terminal 52 of the wiring board. The connection can be made directly using a solder paste or a conductive adhesive. At the same time, the electrode part 42 of the other second electrode layer of the first or second capacitor, the electrode part 22 of the first electrode layer, or the electrode part 1 of the first electrode
2 can be directly connected to the second connection terminal 62 of the electronic component using a solder paste or a conductive adhesive. And
The inductance value of the connection portion between the first connection terminal 52 of the wiring board or the second connection terminal 62 of the electronic component and the capacitor is reduced, and the electronic circuit of the electronic component 60 or the wiring circuit of the wiring substrate 50 and the capacitor are connected. High-frequency signals can be efficiently transmitted through the gap with little deterioration. Further, the first connection terminal 52 of the wiring board and the second connection terminal 6 of the electronic component are provided.
The first or second capacitor can be used in place of the solder ball for connecting the first and second capacitors. Then, the troublesome work of embedding the first or second capacitor in the wiring board 50 near the electronic component 60 can be eliminated.

FIGS. 12 to 15 show a preferred embodiment of the first wiring board of the present invention, and FIGS. 12 to 15 are explanatory views of the structure. Hereinafter, the first wiring board will be described.

In the first wiring board shown in the figure, the first or second spherical capacitor is a wiring board main body made of resin below the first connection terminals 52 for connecting electronic components formed on the surface of the wiring board 50. 56 buried. The electrode portion 22 of the first electrode layer, the electrode portion 12 of the first electrode, or the electrode portion 42 of the second electrode layer of one of the first and second spherical capacitors is connected to a wiring circuit formed inside the wiring board body 56. 54. The electrode portion 42 of the other second electrode layer of the first or second spherical capacitor, the electrode portion 22 of the first electrode layer, or the electrode portion 12 of the first electrode layer is formed on the surface of the wiring substrate 50 by One connection terminal 52 is connected via a conductor via 70 formed in the wiring board main body 56. Conductor via 70
Are formed by metal plating.

In this first wiring board, as shown in FIGS. 12 to 15, a first or second spherical capacitor is mounted on a wiring board body 56 near the first connection terminal 52 for connecting electronic components. Can be buried. Then, the electrode portion 22 of the first electrode layer, the electrode portion 12 of the first electrode, or the electrode portion 42 of the second electrode layer of the capacitor is shortened by a short distance to the wiring circuit 54 formed inside the wiring board body 56. Can connect. At the same time, the electrode portion 4 of the other second electrode layer of the capacitor
2. The electrode portion 22 of the first electrode layer or the electrode portion 12 of the first electrode
Can be connected to the first connection terminal 52 of the wiring board via the conductor via 70 for a short distance. Then, the inductance of the connection between the wiring circuit 54 of the wiring board and the second connection terminal 62 of the electronic component connected to the first connection terminal 52 of the wiring board and the capacitor is suppressed to be low, and the capacitance of the capacitor and the electronic component 60 is reduced. Deterioration of high-frequency signals transmitted between the electronic circuit and the wiring circuit 54 of the wiring board can be prevented.

FIGS. 16 to 19 show a preferred embodiment of the second wiring board of the present invention, and FIGS. 16 to 19 are explanatory views of the structure. Hereinafter, the second wiring board will be described.

In the second wiring board shown in the figure, the first or second spherical capacitor is composed of the electrode portion 42 of one of the second electrode layers, the electrode portion 22 of the first electrode layer, or the electrode of the first electrode. The portion 12 is buried in the wiring board body 56 made of resin so as to protrude outside the wiring board body 56. And
A first or second projection protruding outside the wiring board body 56;
The electrode portion 42 of one of the second electrode layers, the electrode portion 22 of the first electrode layer, or the electrode portion 12 of the first electrode of the spherical capacitor serves as a first connection terminal for connecting electronic components. An electrode portion 22 of the other first electrode layer of the first or second spherical capacitor;
The electrode portion 12 of the first electrode or the electrode portion 42 of the second electrode layer is
It is connected to a wiring circuit 54 formed inside the wiring board body 56.

The second wiring board shown in FIGS. 16 to 19 is configured as described above. In this second wiring board, as shown by broken lines in FIGS. 16 to 19, the electrode portion 42 of one of the second electrode layers of the first or second spherical capacitor projecting above the wiring board body 56. , First
The electrode portion 22 of the electrode layer or the electrode portion 12 of the first electrode can be directly connected to the second connection terminal 62 of the electronic component using a solder paste or a conductive adhesive. At the same time, the electrode portion 2 of the other first electrode layer of the first or second spherical capacitor
2, the electrode portion 12 of the first electrode or the electrode portion 42 of the second electrode layer
To the wiring circuit 54 formed inside the wiring board body 56.
Can be connected for a short distance. Then, the second connection terminal 62 of the electronic component or the wiring circuit 54 of the wiring board and the first or second
To prevent the deterioration of the high-frequency signal transmitted between the first or second spherical capacitor and the electronic circuit of the electronic component 60 or the wiring circuit 54 of the wiring board by keeping the inductance value of the connection portion with the spherical capacitor low. Can be.

Next, a preferred embodiment of the method for manufacturing the first wiring board shown in FIGS. 12 to 15, which is the first method for manufacturing the wiring board of the present invention, will be described. FIGS. 20 to 25 show a first embodiment using the first spherical capacitor of the present invention.
1 shows a method for manufacturing a wiring board. Below, this first
A method of manufacturing a wiring board will be described. The second embodiment of the present invention
The method for manufacturing the first wiring board using the spherical capacitor of the present invention is the same as the method for manufacturing the first wiring board using the first spherical capacitor of the present invention. Drawings showing the method for manufacturing the first wiring board are omitted.

In the first method for manufacturing a wiring board, the method shown in FIG.
As shown in FIG. 0 or FIG. 21, the electrode portion 22 of the first electrode layer, the electrode portion 12 of the first electrode, or the electrode portion 42 of the second electrode layer of the first or second spherical capacitor is connected to a wiring board. It is connected to a wiring circuit 54 formed on the surface of the main body 56 using a solder paste or a conductive adhesive. Then, the step a of the first method for manufacturing a wiring board of the present invention is performed.

Next, as shown in FIG. 22 or FIG. 23, the first connected to the wiring circuit 54 on the surface of the wiring board main body.
Or, the second spherical capacitor and the wiring board body 5 around the second spherical capacitor
6 is covered with an insulating resin layer 120 constituting the wiring board 50, and the first or second resin layer 120 is provided on the resin layer 120.
The spherical capacitor is embedded. Specifically, a laminate made of an insulating resin is stuck on the surface of the wiring board body 56 so as to surround the capacitor, and cured. And b of the first method for manufacturing a wiring board of the present invention.
Process.

Next, as shown in FIG. 24 or FIG. 25, the electrode portion 4 of the other second electrode layer of the first or second spherical capacitor is provided on the resin layer 120 in which the capacitor is embedded.
2. The electrode portion 22 of the first electrode layer or the electrode portion 12 of the first electrode
The upper end of the conductive via 70 connected to the
It is formed so as to be exposed on the surface. The conductor via 70 is formed by metal plating. Then, the step c of the first method for manufacturing a wiring board of the present invention is performed.

Thereafter, FIG. 12, FIG. 13 or FIG. 14, FIG.
As shown in FIG. 5, on the surface of the resin layer 120 in which the first or second spherical capacitor is embedded, the first connection terminal 52 connected to the upper end of the conductor via 70 or a wiring circuit having the first connection terminal (Not shown). Then, the step d of the first method for manufacturing a wiring board of the present invention is performed.

The method for manufacturing the first wiring board shown in FIGS. 20 to 25 includes the above steps.

Next, a preferred embodiment of the method for manufacturing the second wiring board of the present invention, which is the method for manufacturing the second wiring board shown in FIGS. 16 to 19, will be described. FIGS. 26 to 29 show a second embodiment using the first spherical capacitor of the present invention.
1 shows a method for manufacturing a wiring board. Below, this second
A method of manufacturing a wiring board will be described. The second embodiment of the present invention
Since the method for manufacturing the second wiring board using the spherical capacitor of the present invention is the same as the method for manufacturing the second wiring board using the first spherical capacitor of the present invention, the second spherical board was used. The drawings showing the method for manufacturing the second wiring board are omitted.

In the method of manufacturing the second wiring board, as shown in FIG. 26 or FIG. 27, the electrode portion 22 of the first electrode layer of one of the first or second spherical capacitors,
The electrode part 12 of the electrode or the electrode part 42 of the second electrode layer is connected to a wiring circuit 54 formed on the surface of the wiring board body 56 using a solder paste or a conductive adhesive. Then, the step a of the second method for manufacturing a wiring board of the present invention is performed.

Next, as shown in FIG. 28 or FIG. 29, the capacitor connected to the wiring circuit 54 on the surface of the wiring board main body and the surface of the wiring board main body 56 around the capacitor are connected to the insulating board Of the resin layer 120. Then, the electrode portion 42 of the other second electrode layer, the electrode portion 22 of the first electrode layer, or the electrode portion 12 of the first electrode of the first or second spherical capacitor is projected above the resin layer 120. . Then, the electrode portion 42 of the other second electrode layer, the electrode portion 22 of the first electrode layer or the electrode portion 12 of the first electrode of the first or second spherical capacitor protruding above the resin layer 120 is It is a first connection terminal for connecting electronic components. Then, the step b of the second method for manufacturing a wiring board of the present invention is performed.

The method for manufacturing the second wiring board shown in FIGS. 26 to 29 includes the above steps.

In the method of manufacturing the first or second wiring board, FIGS. 12 to 15 or FIGS.
Can be easily and accurately formed using a conventional general-purpose technology for CSP production and a conventionally used device.

The first electrode layer 20 and the second electrode layer 40 of the first or second spherical capacitor are preferably made of Ti or Cr / Cu. For the resin layer 120 covering the surface of the wiring board body 56, an insulating organic resin material such as ABF or PPE or an insulating resin material for forming a build-up substrate may be used.

[0082]

As described above, according to the first or second wiring board of the present invention using the first or second spherical capacitor of the present invention, the first or second spherical capacitor can be used. The capacitor can be electrically connected to the electronic circuit of the electronic component or the wiring circuit of the wiring substrate and the capacitor for a short distance by being buried in the wiring board near the mounting position of the electronic component. The deterioration of the high-frequency signal transmitted between the capacitor and the electronic circuit of the electronic component or the wiring circuit of the wiring board is prevented, and the high-frequency signal is transmitted between the capacitor and the electronic circuit of the electronic component or the wiring circuit of the wiring board. Can be transmitted efficiently. According to the spherical capacitor mounting structure of the present invention using the first or second spherical capacitor of the present invention, the solder for connecting the first connection terminal of the wiring board and the second connection terminal of the electronic component is provided. The first connection terminal and the second connection terminal can be connected to each other through a first or second spherical capacitor instead of the ball. The deterioration of the high-frequency signal transmitted between the capacitor and the electronic circuit of the electronic component or the wiring circuit of the wiring board is prevented, and the high-frequency signal is transmitted between the capacitor and the electronic circuit of the electronic component or the wiring circuit of the wiring board. Can be transmitted efficiently.

According to the first or second method for manufacturing a spherical capacitor of the present invention, the first or second spherical capacitor of the present invention can be formed easily and accurately by a dry process or the like. At the same time, the first or second spherical capacitor of the present invention can be easily and accurately formed by using a conventional general-purpose technique and apparatus for forming a solder ball.

Further, according to the method of manufacturing the first or second wiring board of the present invention, the first or second wiring board of the present invention can be formed easily and accurately. At the same time, the first or second wiring board of the present invention can be easily and accurately formed by using a conventional general-purpose technique and apparatus for forming a CSP.

[Brief description of the drawings]

FIG. 1 is a structural explanatory view of a first spherical capacitor of the present invention.

FIG. 2 is a diagram illustrating the structure of a second spherical capacitor according to the present invention.

FIG. 3 is a process explanatory view showing a first method for manufacturing a spherical capacitor of the present invention.

FIG. 4 is a process explanatory view showing the first method for producing a spherical capacitor of the present invention.

FIG. 5 is a process explanatory view showing the first method for manufacturing a spherical capacitor of the present invention.

FIG. 6 is a process explanatory view showing a second method for manufacturing a spherical capacitor of the present invention.

FIG. 7 is a process explanatory view showing a second method for manufacturing a spherical capacitor of the present invention.

FIG. 8 is an explanatory view showing a mounting structure of a spherical capacitor of the present invention.

FIG. 9 is an explanatory view showing a mounting structure of a spherical capacitor according to the present invention.

FIG. 10 is an explanatory view showing a mounting structure of a spherical capacitor of the present invention.

FIG. 11 is an explanatory view showing a mounting structure of a spherical capacitor of the present invention.

FIG. 12 is a structural explanatory view of a first wiring board of the present invention.

FIG. 13 is a structural explanatory view of a first wiring board of the present invention.

FIG. 14 is a structural explanatory view of a first wiring board of the present invention.

FIG. 15 is an explanatory diagram of a structure of a first wiring board of the present invention.

FIG. 16 is a diagram illustrating the structure of a second wiring board according to the present invention.

FIG. 17 is a structural explanatory view of a second wiring board of the present invention.

FIG. 18 is a diagram illustrating the structure of a second wiring board according to the present invention.

FIG. 19 is a structural explanatory view of a second wiring board of the present invention.

FIG. 20 is a process explanatory view of the first method for manufacturing a wiring board of the present invention;

FIG. 21 is a process explanatory view of the first method for manufacturing a wiring board of the present invention.

FIG. 22 is an explanatory diagram of steps of the first method for manufacturing a wiring board of the present invention.

FIG. 23 is an explanatory diagram showing steps of the first method for manufacturing a wiring board according to the present invention;

FIG. 24 is an explanatory view illustrating a step of the first method for manufacturing a wiring board according to the present invention;

FIG. 25 is an explanatory diagram showing steps of the first method for manufacturing a wiring board according to the present invention;

FIG. 26 is a process explanatory view of the second method for manufacturing a wiring board of the present invention.

FIG. 27 is an explanatory view illustrating a step of the method for manufacturing the second wiring board of the present invention.

FIG. 28 is an explanatory diagram of a step in the method for manufacturing the second wiring board of the present invention.

FIG. 29 is an explanatory diagram showing a step of the method for manufacturing the second wiring board of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 10 core 12 electrode portion of first electrode 14 first electrode 20 first electrode layer 22 electrode portion of first electrode layer 30 dielectric layer 32 peripheral edge of dielectric layer 40 second electrode layer 42 electrode portion of second electrode layer 50 Wiring board 52 First connection terminal 54 Wiring circuit 56 Wiring board body 60 Electronic component 62 Second connection terminal 70 Conductor via 100 First positioning jig 102 First dent 104 First through hole 110 Second positioning jig 113 Second dent 115 second through hole 120 resin layer

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Keisuke Ueda Inventor Keisuke Ueda 711 Toshida, Kurita-sha, Nagano-shi, Nagano F-term in Shinko Electric Co., Ltd. 5E082 AA01 AB01 BB02 BC39 EE05 EE13 EE23 EE37 EE39 FF05 FG03 FG42 MM21 5E319 AC03 BB04 BB11 GG20

Claims (15)

[Claims] 1. A first electrode layer, a dielectric layer, and a second electrode layer are laminated and formed in this order on a surface of a substantially spherical core,
A spherical capacitor, wherein an electrode portion of the first electrode layer is exposed outside the dielectric layer and the second electrode layer. 2. The semiconductor device according to claim 1, wherein a peripheral edge of said second electrode layer is disposed so as to be recessed inside the peripheral edge of said dielectric layer.
A spherical capacitor as described. 3. The semiconductor device according to claim 1, wherein said core is made of silicon.
Or the spherical capacitor according to 2. 4. A dielectric layer and a second electrode layer are formed in this order on a surface of a core made of a substantially spherical conductor constituting a first electrode, and an electrode portion of the first electrode is formed by the dielectric layer. A spherical capacitor which is exposed outside a body layer and a second electrode layer. 5. The semiconductor device according to claim 4, wherein a peripheral edge of said second electrode layer is disposed to be receded inward from a peripheral edge of said dielectric layer.
A spherical capacitor as described. 6. The method according to claim 4, wherein the core is made of copper.
A spherical capacitor as described. 7. The method for manufacturing a spherical capacitor according to claim 1, further comprising the following steps. a. Forming a first electrode layer on the surface of the substantially spherical core by sputtering, CVD, or metal plating; b. Forming a dielectric layer on the surface of the first electrode layer by sputtering, CVD, or anodizing by exposing the electrode portion of the first electrode layer outside the dielectric layer; c. A second electrode layer is formed on the surface of the dielectric layer by sputtering, CVD, or metal plating by exposing the electrode portion of the first electrode layer outside the second electrode layer and the dielectric layer. Process. 8. In the step (b), a lower portion of the core on which the electrode portion of the first electrode layer is formed is fitted into a first recess or a first through hole provided in a first positioning jig, and The first recess or the center of the surface on which the first electrode layer of the core is formed at the periphery of the opening of the first through hole is supported, and the core is positioned on the first positioning jig. A dielectric layer is formed on the surface of the core protruding upward, on which the first electrode layer is formed.
Formed by sputtering or CVD, and in the step c, the lower part of the core where the electrode part of the first electrode layer is exposed and the lower part of the core where the dielectric layer is formed around the core, The diameter of the second recess or the second through-hole provided in the second positioning jig having a diameter larger than that of the first recess or the first through-hole is fitted to the opening of the second recess or the second through-hole. Supporting the middle part of the surface where the dielectric layer of the core is formed on the periphery,
The core is positioned on a second positioning jig, and a second electrode layer is formed by sputtering or CVD on a surface of the core protruding above the second positioning jig on which the dielectric layer is formed. A method for manufacturing a spherical capacitor according to claim 7. 9. The method for producing a spherical capacitor according to claim 4, comprising the following steps. a. A dielectric layer is formed on the surface of a substantially spherical core constituting the first electrode, and the first layer is formed outside the dielectric layer.
A step of exposing an electrode portion of the electrode and forming the electrode by sputtering, CVD, or anodization. b. Forming a second electrode layer on the surface of the dielectric layer by sputtering, CVD, or metal plating by exposing the electrode portion of the first electrode outside the second electrode layer and the dielectric layer; . 10. In the step (a), a lower portion of a core constituting an electrode portion of the first electrode is fitted into a first recess or a first through hole provided in a first positioning jig, and Supporting the middle of the surface of the core at the periphery of the opening or the opening of the first through hole, positioning the core on the first positioning jig, and on the surface of the core protruding above the first positioning jig, The dielectric layer is formed by sputtering or CVD, and in the step b, the lower part of the core where the electrode portion of the first electrode is exposed and the lower part of the core where the dielectric layer around the core is formed, The diameter of the opening is fitted into the second recess or the second through hole provided in the second positioning jig having a diameter larger than that of the first recess or the first through hole, and the second recess or the second through hole is fitted. Supporting the middle part of the surface where the dielectric layer of the core is formed on the periphery of the opening,
The core is positioned on a second positioning jig, and a second electrode layer is formed by sputtering or CVD on a surface of the core protruding above the second positioning jig on which the dielectric layer is formed. A method for manufacturing a spherical capacitor according to claim 9. 11. The electronic device according to claim 1, further comprising: a first connection terminal formed on the wiring board for connecting electronic components, and a second connection terminal provided on the electronic component mounted on the wiring board. ,
The spherical capacitor according to 4, 5, or 6 is interposed, and the first electrode layer, the first electrode, or the electrode portion of the second electrode layer of the capacitor is connected to the first electrode layer using a solder paste or a conductive adhesive. 1 connection terminal, and the other second electrode layer, the first electrode layer or the electrode portion of the first electrode of the capacitor is connected to the second electrode layer using a solder paste or a conductive adhesive.
A mounting structure of a spherical capacitor which is connected to a connection terminal. 12. A spherical capacitor according to claim 1, 2, 3, 4, 5, or 6, embedded in a wiring board body below a first connection terminal for connecting electronic components formed on a surface of the wiring board body. Then, the electrode portion of one of the first electrode layer, the first electrode or the second electrode layer of the capacitor is connected to a wiring circuit formed inside the wiring substrate body, and the other of the capacitor is connected to the other first electrode layer. A wiring board, wherein a two-electrode layer, a first electrode layer, or an electrode portion of the first electrode is connected to the first connection terminal via a conductor via formed in the wiring board body. 13. The spherical capacitor according to claim 1, wherein one of the second electrode layer and the first electrode layer of the capacitor is provided on the wiring board body outside the wiring board body. The electrode portion of the first electrode is buried so as to protrude, and the second
The electrode layer, the first electrode layer, or the electrode portion of the first electrode is used as a first connection terminal for connecting an electronic component, and the electrode portion of the other first electrode layer, the first electrode, or the second electrode layer of the capacitor. Is connected to a wiring circuit formed inside the wiring board body. 14. The method for manufacturing a wiring board according to claim 12, comprising the following steps. a. An electrode part of one of the first electrode layer, the first electrode, or the second electrode layer of the spherical capacitor according to claim 1, 2, 3, 4, 5, or 6, to a wiring circuit formed on a surface of the wiring board body. ,
A step of connecting using a solder paste or a conductive adhesive. b. A step of covering the capacitor connected to the wiring circuit and the surface of the wiring substrate body around the capacitor with an insulating resin layer. c. Forming a conductor via connected to the other second electrode layer, the first electrode layer, or the electrode portion of the first electrode of the capacitor in the resin layer by exposing an upper end thereof to a surface of the resin layer; d. Forming a first connection terminal connected to an upper end of the conductor via or a wiring circuit having the first connection terminal on the surface of the resin layer; 15. The method according to claim 13, further comprising the following steps. a. An electrode part of one of the first electrode layer, the first electrode, or the second electrode layer of the spherical capacitor according to claim 1, 2, 3, 4, 5, or 6, to a wiring circuit formed on a surface of the wiring board body. ,
A step of connecting using a solder paste or a conductive adhesive. b. The capacitor connected to the wiring circuit and the surface of the wiring substrate body surrounding the capacitor are covered with an insulating resin layer, and the other second electrode layer, first electrode layer or first electrode layer of the capacitor is provided above the resin layer. A step of projecting an electrode portion of the electrode and using the second electrode layer, the first electrode layer, or the electrode portion of the first electrode as a first connection terminal for connecting an electronic component.