JP2001262319A - Vacuum deposition system - Google Patents
Vacuum deposition systemInfo
- Publication number
- JP2001262319A JP2001262319A JP2000082035A JP2000082035A JP2001262319A JP 2001262319 A JP2001262319 A JP 2001262319A JP 2000082035 A JP2000082035 A JP 2000082035A JP 2000082035 A JP2000082035 A JP 2000082035A JP 2001262319 A JP2001262319 A JP 2001262319A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- evaporation
- vacuum
- electron beam
- deposition system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本装置は、基板上に薄膜を形
成するための真空蒸着装置に関する。The present invention relates to a vacuum deposition apparatus for forming a thin film on a substrate.
【０００２】[0002]
【従来の技術】従来、電子線を照射する事により蒸着膜
を形成する装置の坩堝は無酸素銅の容器が一般的であ
る。しかし、蒸発させる材料によっては、坩堝の耐熱性
の制限から坩堝内の蒸着材料を有効に使用する事が出来
ない。例えば、酸化アルミニウムや酸化珪素を蒸発させ
る場合、坩堝近傍に電子線を照射すると坩堝の表面温度
は１０００℃以上に上昇するため、無酸素銅の坩堝は溶
融する恐れがある。そのため坩堝内壁近傍の蒸着材料は
いくらか蒸発させずに残す必要があった。2. Description of the Related Art Conventionally, a crucible of an apparatus for forming a deposited film by irradiating an electron beam is generally an oxygen-free copper container. However, depending on the material to be evaporated, the evaporation material in the crucible cannot be used effectively due to the limitation of the heat resistance of the crucible. For example, when evaporating aluminum oxide or silicon oxide, the surface temperature of the crucible rises to 1000 ° C. or higher when an electron beam is irradiated near the crucible, and thus the oxygen-free copper crucible may be melted. For this reason, it was necessary to leave some evaporation material near the inner wall of the crucible without being evaporated.
【０００３】[0003]
【発明が解決しようとする課題】上述したように、従来
の技術では坩堝内の材料を内壁近傍まで蒸発させる事は
坩堝を溶融させてしまう恐れがあり困難であった。そこ
で本発明の目的は、上記従来技術の有する問題点を解消
し、坩堝内の蒸発材料を有効に使用出来る真空蒸着装置
を提供する事にある。As described above, in the prior art, it was difficult to evaporate the material in the crucible to the vicinity of the inner wall because the crucible might be melted. SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a vacuum deposition apparatus that can effectively use the evaporation material in a crucible.
【０００４】[0004]
【課題を解決するための手段】上記目的は、請求項記載
の発明により達成される。すなわち、真空槽内で走行す
る基板に電子線を照射する事で蒸着膜を形成可能な蒸着
装置において、蒸発材料を保持するための坩堝内壁部に
グラファイト成分が９５％以上からなる炭素材料の板を
設置する事で、仮に電子線が坩堝内壁近傍に照射された
としても融点が３５５０℃のグラファイトにより坩堝自
体の溶融を防止出来る。その為、坩堝内の蒸発材料を内
壁近傍まで使用する事が出来る様になり、材料を有効に
使用する事が可能となる。The above object is achieved by the invention described in the claims. That is, in a vapor deposition apparatus capable of forming a vapor deposition film by irradiating a substrate traveling in a vacuum chamber with an electron beam, a carbon material plate containing 95% or more of a graphite component is formed on an inner wall portion of a crucible for holding a vaporized material. By disposing the crucible, melting of the crucible itself can be prevented by graphite having a melting point of 3550 ° C. even if the electron beam is irradiated near the inner wall of the crucible. Therefore, the evaporation material in the crucible can be used up to the vicinity of the inner wall, and the material can be used effectively.
【０００５】[0005]
【作用】本発明によれば、坩堝内壁近傍まで電子線を照
射する事により、坩堝内に入れられた蒸発材料を有効に
使用する事が出来、より長時間の蒸着が可能となる。ま
た、仮に炭素材料、望ましくは炭素複合材から成る板が
酸化等の侵食により痩せても、板を交換する事で容易に
復旧する事が出来る。更に、板を分割しておけば交換費
用を抑える事も可能となる。According to the present invention, by irradiating the electron beam to the vicinity of the inner wall of the crucible, the evaporating material put in the crucible can be used effectively, and the vapor deposition can be performed for a longer time. Even if a plate made of a carbon material, desirably a carbon composite material becomes thin due to erosion such as oxidation, it can be easily recovered by replacing the plate. Further, if the plate is divided, the replacement cost can be reduced.
【０００６】[0006]
【実施例】以下に実施例をあげて本発明を説明するが、
本発明はこれらにより限定されるものでは無い。第１図
は、本発明の実施例における真空蒸着装置を示す概略図
である。 真空槽６の巻き出しロール１にセットされた
高分子フィルム１１は冷却ロール３上を走行し、巻き取
りロール２で巻き取られる。 真空槽内の真空度は排気
装置９により所定の真空度に維持される。 坩堝８は真
空槽６の底部に配置され、電子銃４は坩堝８に収納され
た蒸着材料１０に対して電子線１２を照射する。電子線
１２により加熱されて蒸発した材料の一部は冷却ロール
３上を走行する高分子フィルム１１の表面に蒸着され
る。以下に実施した具体例を示す。The present invention will be described below with reference to examples.
The present invention is not limited by these. FIG. 1 is a schematic diagram showing a vacuum evaporation apparatus according to an embodiment of the present invention. The polymer film 11 set on the unwinding roll 1 of the vacuum chamber 6 runs on the cooling roll 3 and is wound by the winding roll 2. The degree of vacuum in the vacuum chamber is maintained at a predetermined degree of vacuum by the exhaust device 9. The crucible 8 is arranged at the bottom of the vacuum chamber 6, and the electron gun 4 irradiates the electron beam 12 to the deposition material 10 stored in the crucible 8. Part of the material heated and evaporated by the electron beam 12 is deposited on the surface of the polymer film 11 running on the cooling roll 3. The following is a specific example of the implementation.
【０００７】蒸着に用いられる高分子フィルム１１はポ
リエチレンテレフタレート（ＰＥＴ）フィルム（東洋紡
績（株）製、Ｅ５１００）を用いた。その他の高分子フ
ィルムとしては、ポリプロピレン、ポリエチレン、ナイ
ロン６、ナイロン６６、ナイロン１２、ナイロン４、ポ
リ塩化ビニル、ポリ塩化ビニリデン、等が上げられるが
蒸着基板は特に限定する物ではない。蒸着源として３〜
５ｍｍ程度の大きさの粒子状の酸化アルミニウム（Ａｌ
２Ｏ３、純度９９．５％）と酸化珪素（ＳｉＯ2、純度
９９．９％）を用いた。上記材料を保持する坩堝は銅で
製作し、坩堝底面には炭素複合材の５ｍｍ厚のものを設
置した。図２の実施例（ａ）は上記実施例における坩堝
８の概略図を示すが、実施例（ｂ）や、実施例（ａ）と
実施例（ｂ）の組み合わせでもよい。実施例（ａ）は坩
堝底面に炭素材料の板を設置した例であり、実施例
（ｂ）は坩堝内側面に炭素材料の板を設置した例であ
る。As the polymer film 11 used for vapor deposition, a polyethylene terephthalate (PET) film (E5100, manufactured by Toyobo Co., Ltd.) was used. Examples of other polymer films include polypropylene, polyethylene, nylon 6, nylon 66, nylon 12, nylon 4, polyvinyl chloride, polyvinylidene chloride, and the like, but the vapor deposition substrate is not particularly limited. 3 ~ as evaporation source
Particulate aluminum oxide (Al) having a size of about 5 mm
2 O 3 , purity 99.5%) and silicon oxide (SiO 2 , purity 99.9%) were used. The crucible holding the above material was made of copper, and a carbon composite material having a thickness of 5 mm was placed on the bottom of the crucible. The embodiment (a) of FIG. 2 shows a schematic view of the crucible 8 in the above embodiment, but the embodiment (b) or a combination of the embodiments (a) and (b) may be used. Example (a) is an example in which a plate made of a carbon material is installed on the bottom of the crucible, and Example (b) is an example in which a plate made of a carbon material is installed on the inner side surface of the crucible.
【０００８】図３はＡｌ２Ｏ３に比較して蒸発体積の大
きいＳｉＯ2の材料蒸発可能領域を示したものである
が、坩堝内壁部に炭素材料板を設置する事により従来は
未蒸発としていた部分を蒸発させる事が可能である事が
分る。FIG. 3 shows an evaporable region of SiO 2 having a larger evaporation volume than that of Al 2 O 3. However, by installing a carbon material plate on the inner wall of the crucible, it is conventionally regarded as unevaporated. It turns out that it is possible to evaporate the part that was.
【０００９】[0009]
【発明の効果】上述した様に本発明を用いれば、坩堝内
の蒸発材料を有効に蒸発させる事が出来る。According to the present invention as described above, the evaporation material in the crucible can be effectively evaporated.
【図１】 本発明による真空蒸着装置の全体の構成図で
ある。FIG. 1 is an overall configuration diagram of a vacuum deposition apparatus according to the present invention.
【図２】 実施例における坩堝の構造及び坩堝内の材料
配置の概略図である。FIG. 2 is a schematic view of a structure of a crucible and an arrangement of materials in the crucible according to the embodiment.
【図３】 従来及び、本発明の坩堝構造における材料蒸
発領域の比較である。FIG. 3 is a comparison of the material evaporation region between the conventional and the crucible structures of the present invention.
１．巻き出しロール ２．巻き取りロール ３．冷却ロール ４．電子銃 ５．テンション・ロール ６．真空槽 ７．防着板 ８．坩堝 ９．排気装置 １０．蒸着材料 １０ａ．Ａｌ2Ｏ3 １０ｓ．ＳｉＯ2 １１．基板 １２．電子線 １３．仕切り １４．冷却管 １５．炭素材料板1. Unwinding roll 2. Take-up roll 3. Cooling roll 4. Electron gun 5. 5. Tension roll Vacuum chamber 7. 7. Deposition plate Crucible 9. Exhaust device 10. Evaporation material 10a. Al 2 O 3 10 s. SiO 2 11. Substrate 12. Electron beam 13. Partition 14. Cooling pipe 15. Carbon material plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 窪田 隆弘 滋賀県大津市堅田２丁目１番１号 東洋紡 績株式会社総合研究所内 Ｆターム(参考） 4K029 CA01 DB12 DB21 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Takahiro Kubota 2-1-1 Katata, Otsu-shi, Shiga F-term in Toyobo Co., Ltd. Research Laboratory 4K029 CA01 DB12 DB21
Claims (1)
事で槽内を走行する基板に蒸着膜を形成可能な真空蒸着
装置において、蒸着材料を保持する坩堝内壁部に少なく
ともグラファイト成分が９５％以上からなる炭素材料の
板を設置する事を特徴とする真空蒸着装置。In a vacuum evaporation apparatus capable of forming an evaporation film on a substrate running in a vacuum vessel by irradiating an electron beam to the evaporation material in the vacuum chamber, at least a graphite component is present on an inner wall portion of a crucible holding the evaporation material. A vacuum deposition apparatus characterized by installing a plate of carbon material composed of 95% or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000082035A JP2001262319A (en) | 2000-03-23 | 2000-03-23 | Vacuum deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000082035A JP2001262319A (en) | 2000-03-23 | 2000-03-23 | Vacuum deposition system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001262319A true JP2001262319A (en) | 2001-09-26 |
Family
ID=18598887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000082035A Withdrawn JP2001262319A (en) | 2000-03-23 | 2000-03-23 | Vacuum deposition system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001262319A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004038492A1 (en) * | 2002-10-23 | 2004-05-06 | Japan Science And Technology Corporation | Optical signal amplifying three-terminal device, optical signal transfer method using same, optical signal relay device, and optical signal storage device |
| JP2005133133A (en) * | 2003-10-29 | 2005-05-26 | Toyobo Co Ltd | Deposition-preventive plate for vacuum thin film deposition apparatus |
-
2000
- 2000-03-23 JP JP2000082035A patent/JP2001262319A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004038492A1 (en) * | 2002-10-23 | 2004-05-06 | Japan Science And Technology Corporation | Optical signal amplifying three-terminal device, optical signal transfer method using same, optical signal relay device, and optical signal storage device |
| JP2005133133A (en) * | 2003-10-29 | 2005-05-26 | Toyobo Co Ltd | Deposition-preventive plate for vacuum thin film deposition apparatus |
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