JP2001196298A - Substrate processing system and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure the film thickness of a resist film coating a wafer by a peripheral exposure apparatus inside a substrate processing system. SOLUTION: In a peripheral exposure apparatus 51 inside a coating development processing system 1, the film thickness of a resist film on a wafer W by providing a film thickness sensor 64 that senses the film thickness of the resist film by laser beam and moving the wafer W on a loading stand 61 in the X direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing system and a substrate processing method.

[0002]

2. Description of the Related Art For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on a surface of a semiconductor wafer (hereinafter, "wafer"), an exposure process for irradiating a wafer with a pattern and exposing the wafer, A development process for developing the exposed wafer is performed. Each processing apparatus that performs these processes, except for the exposure processing apparatus, is put together as one system to constitute a coating and developing processing system.

Here, in order to preferably perform a predetermined lithography process, it is important that the resist film applied on the wafer before the pattern exposure processing has a predetermined thickness. Therefore, before the pattern exposure, the thickness of the resist film on the wafer is inspected, and when the thickness exceeds a predetermined allowable value, for example, the number of rotations of the wafer of the coating apparatus is adjusted based on the inspection. .

Conventionally, the inspection of the film thickness of a resist film is performed by an operator who extracts a wafer before exposure processing from a coating and developing processing system and uses an inspection film thickness measuring device provided separately from the coating and developing processing system. It was done.

[0005]

However, it is necessary to transport the wafer from the coating and developing processing system to the apparatus for inspecting the film thickness, which is troublesome and time consuming. In addition, the wafer may be contaminated during the reciprocation.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a film thickness measuring means is provided in a peripheral exposure apparatus which can use an existing mechanism in a coating and developing system, so that a resist film of a wafer can be formed in the same system. The purpose is to inspect the film thickness of the film.

[0007]

According to a first aspect of the present invention, there is provided a coating apparatus for applying a processing liquid onto a substrate, and a mounting table rotatable and movable in at least one direction. A peripheral exposure device for irradiating a peripheral portion of the substrate with light from an irradiating section to expose a coating film on the substrate, the peripheral exposure device comprising: There is provided a substrate processing system including a film thickness measuring unit having a sensor member for measuring a film thickness.

Generally, the peripheral exposure apparatus is rotatable,
It has a mounting table movable in at least one direction. Focusing on this point, in the substrate processing system according to the first aspect, for example, the film thickness can be suitably measured at a predetermined position on the substrate by using such a mechanism. It is not necessary to provide an apparatus having the same separately from the substrate processing system.

According to a second aspect of the present invention, in the substrate processing system according to the first aspect, there is provided a means for forming an air flow in the exposure apparatus, and the film thickness measuring means is provided for measuring the film thickness. A substrate processing system is provided, comprising a sensor member, wherein the sensor member is located at least on the upstream side of the irradiation section on the upstream side.

[0010] In the substrate processing system according to the second aspect, since the sensor member of the film thickness measuring means is located upstream of the airflow from the irradiation unit, for example, during peripheral exposure,
Organic substances generated from the coating film on the substrate can be prevented from fouling the sensor member.

According to a third aspect of the present invention, the sensor member may include a protection member for covering the sensor member. Accordingly, it is possible to prevent the sensor unit from being contaminated when the sensor unit is not used.

According to a fourth aspect of the present invention, there is provided the substrate processing system according to the first, second, or third aspect, wherein the sensor member can be retracted from the substrate. This makes it possible to prevent the sensor unit from being contaminated by retreating the sensor member from the easily contaminated substrate.

The light source of the sensor member may be a laser beam, or the light source may be a light emitting diode.

In the substrate processing system according to the fifth aspect, since a laser beam having a single wavelength is used, a more accurate film thickness measurement can be performed. Further, by using a light emitting diode as a light source of the sensor member as described in claim 6, power consumption is reduced and cost is reduced.

According to a seventh aspect of the present invention, the film thickness measuring means comprises:
It is more preferable to have a function of measuring the line width of the pattern formed on the substrate. For example, such a function can be provided by using the same device as the hardware configuration having the film thickness measurement. For example, several patterns of a certain line width are registered, and the reflection pattern when irradiating the substrate is
By comparing with the registered line width pattern, it becomes possible to measure the line width of the pattern formed on the substrate by using exactly the same apparatus as the film thickness measuring apparatus. This can be achieved by exchanging software. By adding such a function, not only the film thickness but also the line width of the pattern after development can be measured, and the yield can be improved.

Further, if a reflecting portion for reflecting light from the sensor member is provided on the mounting table on which the substrate is mounted, more preferable effects can be obtained. That is, by irradiating the light to the reflecting portion with no substrate mounted thereon and measuring the intensity of the reflected light, it is possible to know the deterioration of the light source. Therefore, by performing such intensity measurement periodically, the measurement accuracy of the film thickness can be maintained in a good state.

According to an eighth aspect of the present invention, there is provided a peripheral exposure device for irradiating a peripheral portion of a substrate with light to expose a coating film applied to the substrate, and a device for measuring the thickness of the coating film. In a substrate processing system, there is provided a substrate processing method, comprising measuring the thickness of a coating film on the substrate, irradiating the peripheral portion of the substrate with light, and exposing the coating film.

In such a substrate processing method, since the film thickness measurement and the peripheral exposure are performed by using the same substrate processing system, it is not necessary to perform the film thickness measurement using a separately provided apparatus. Further, after measuring the thickness of the coating film on the substrate, the coating film on the periphery of the substrate is exposed, so that the thickness of the coating film before the peripheral exposure processing can be measured, and the processing up to that time is appropriately performed. It can be used as a material for determining whether or not there is.

In the eighth aspect of the present invention, the thickness of the coating film may be measured again after the peripheral exposure of the coating film.

Since the film thickness is measured again after exposing the coating film in the peripheral portion of the substrate, the change in the film thickness caused during the peripheral exposure processing, for example, the change in the portion where the coating film is exposed is measured. it can. Therefore, it can be confirmed whether or not the peripheral exposure has been properly performed.

According to a tenth aspect of the present invention, there is provided the substrate processing method according to the ninth aspect, wherein the periphery of the coating film in the peripheral portion of the substrate is first exposed, and then the thickness of the coating film is measured. Provided.

In the substrate processing method according to the tenth aspect, since the peripheral exposure and the film thickness measurement are performed using the same substrate processing system, it is not necessary to perform the film thickness measurement using a separately provided apparatus. . Further, since the film thickness measurement is performed after the peripheral exposure processing, the film thickness of the coating film immediately before the exposure processing for exposing the pattern to the substrate can be measured.

According to a twelfth aspect of the present invention, in the processing system further provided with a coating device for coating a coating film on the substrate, a test substrate is used as the substrate for measuring the film thickness, and the film thickness is measured. As a result, when the measured value is within the allowable range, the coating apparatus performs a predetermined coating process on the production substrate, and when the measured value is out of the allowable range, the coating is performed. A substrate processing method is provided in which after performing necessary corrections on the apparatus, the film thickness of another test substrate that has been subjected to the coating processing by the coating apparatus is measured.

For example, in addition to a production substrate, that is, a substrate which is subjected to a predetermined process and is shipped as a product, a test-dedicated substrate is stored in a cassette, and a coating process and a subsequent process are performed on the production substrate. First, the film thickness is measured on a test substrate. If the measured value is within the allowable range, a predetermined coating process is performed on the production substrate by the coating device.

Conversely, if the measured value is out of the allowable range, the necessary corrections are made to the coating apparatus, and then another test substrate is taken out of the cassette and
A coating process is performed on the coating device film, and the film thickness is measured. As a result, when the film thickness is within the allowable range, the production substrate is processed. When the film thickness is outside the allowable range, the coating device is corrected again, and then the film thickness is measured on another test substrate. I will do it. As a result, the yield of production substrates can be improved. The film thickness measurement using such a test substrate may be periodically performed after processing a lot of production substrate breaks and a predetermined number of production substrates.

When the measured value is out of the allowable range, if the measured value is notified to the outside at the same time, it is possible to call attention and promptly make a correction to the coating apparatus.

[0027]

FIG. 1 is a plan view of a coating and developing system 1 as a substrate processing system according to the present embodiment, FIG. 2 is a front view of the coating and developing system 1, and FIG. 2 is a rear view of the coating and developing system 1. FIG.

As shown in FIG. 1, for example, the coating and developing system 1 carries 25 wafers W into and out of the coating and developing system 1 from the outside in units of cassettes and carries wafers W into and out of the cassette C. A cassette station 2 for unloading, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-sheet type in a coating and developing processing step are arranged in multiple stages, and provided adjacent to the processing station 3. The interface unit 4 for transferring the wafer W to and from the exposure apparatus 52 is integrally connected.

In the cassette station 2, a plurality of cassettes C can be mounted in a row in the X direction (up and down direction in FIG. 1) at predetermined positions on a cassette mounting table 5 serving as a mounting portion. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

As will be described later, the wafer carrier 7 is configured so that it can also access the alignment device 32 and the extension device 33 belonging to the third processing device group G3 on the processing station 3 side.

In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to constitute a processing device group. In the coating and developing system 1, four processing unit groups G1, G2, G3, G4 are arranged.
The second processing unit group G1 and the second processing unit group G3 are disposed on the front side of the development processing system 1, the third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4
Are arranged adjacent to the interface unit 4.
A fifth processing unit group optionally indicated by a broken line
G5 can be placed separately on the back side.

In the first processing unit group G1, as shown in FIG. 2, two types of spinner type processing units, for example, a resist coating unit 15 for coating and processing a resist on a wafer W.
And developing processing devices 16 for supplying a developing solution to the wafer W for processing are arranged in two stages from the bottom. Similarly, in the case of the second processing unit group G2, the resist coating unit 17 and the development processing unit 18 are stacked in two stages in order from the bottom.

In the third processing unit group G3, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and a position of the wafer W. An alignment device 32 for performing alignment, an extension device 33 for holding the wafer W on standby, pre-baking devices 34 and 35 for performing a heating process before the exposure process, and post-baking devices 36 and 37 for performing a heating process after the development process are arranged in this order from the bottom. For example, they are stacked in eight stages.

In the fourth processing unit group G4, for example, the cooling device 40, the extension cooling device 41 for naturally cooling the mounted wafer W, the extension device 42, the cooling device 43, and the wafer W after the exposure process are heated. Post exposure baking device 4
4, 45, post-baking devices 46, 47, etc. are stacked in, for example, eight stages from the bottom.

The interface 4 is irradiated with light to a peripheral portion of the wafer W, which will be described later, to expose the resist film formed on the wafer W, and to measure the thickness of the resist film if necessary. A peripheral exposure device 51 is provided. The wafer carrier 50 provided at the center of the interface unit 4 includes an extension cooling unit 41 and an extension unit 4 belonging to the fourth processing unit group G4.
2. The peripheral exposure device 51 and the exposure device 52 shown by a broken line can be accessed.

Next, a peripheral exposure apparatus 5 having a film thickness measuring means
1 will be described with reference to FIGS.

A mounting table 61 for holding the wafer W by suction is provided in a casing 60 of the peripheral exposure apparatus 51. The mounting table 61 is rotatable by a driving mechanism 62 having a built-in motor, for example. Further mounting table 6
The drive mechanism 1 can move in the longitudinal direction (horizontal direction in FIG. 5) because the drive mechanism 62 is movable on the rail 63 extending in the longitudinal direction (horizontal direction in FIG. 5). Above the wafer W, there are provided a film thickness sensor 64 as a sensor member for sensing the film thickness of a resist film as a coating film by a laser beam, and an irradiation section 65 to which light for exposure is irradiated.

An intake fan 66 is mounted on one side of the casing 60, and an exhaust port 72 is provided on the other side, whereby an airflow is formed from the fan 66 toward the exhaust port 72. The atmosphere of the peripheral exposure device 51 is replaced. The film thickness sensor 64 is connected to the irradiation unit 6 in this airflow.
5 is arranged upstream. Also, the film thickness sensor 64
Is suspended by an arm 67, and the arm 67 is rotatably mounted on a rotating shaft 67a installed near the wall of the casing 60 as shown in FIG. Therefore, when the arm 67 is rotated by a driving mechanism (not shown), the film thickness sensor 64 can be retracted from above the wafer W.

Further, the film thickness sensor 64 is
It is connected to a film thickness sensor control device 68 provided outside. The film thickness sensor control device 68 converts the light detected by the film thickness sensor 64 into data and stores the data. Measure the thickness. The irradiation section 65 is provided fixed to the casing 60. The irradiating unit 65 irradiates the wafer with light from a light source unit (not shown) via a light guide path 69 to expose a resist film around the wafer W. Further, a laser light source 70 for transmitting light to detect an accurate position of the wafer and a CCD sensor 71 for detecting the light are provided so as to sandwich the wafer W from above and below.

Next, the process of the test wafer W in the peripheral exposure apparatus 51 configured as described above will be described together with a series of coating and developing processes.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the alignment device 32 belonging to the third processing device group G3. Next, the wafer W whose alignment has been completed by the alignment device 32
Is controlled by the main transporting device 13 so that the adhesion device 3
1, through the cooling device 30, the resist coating device 15
It is conveyed to 17. Then, a resist liquid is applied to the upper surface of the wafer W to form a resist film. Then wafer W
Is sequentially conveyed to the pre-baking device 33 or 34 and the extension cooling device 41, where a predetermined process is performed.

Next, the wafer W is taken out of the extension / cooling device 41 by the wafer carrier 50, and then carried to the peripheral exposure device 51.

At this time, in the peripheral exposure device 51, the fan 66 is operated, an airflow is formed from the fan 66 to the exhaust port 72, and even if impurities such as organic matter are generated, the casing 6 is exposed.
It can be discharged from inside 0. Moreover, since the film thickness sensor 64 is located on the upstream side of the airflow, the formation of the airflow prevents contamination.

The wafer W transferred to the peripheral exposure device 51
Is mounted on the mounting table 61 and held by suction. Mounting table 6
The wafer W held on the wafer 1 includes a laser light source 70 and a CCD.
The coordinates of the outer peripheral position are recognized by the sensor 71, and it is confirmed whether or not the wafer W is placed at a predetermined position.

Next, the measurement of the thickness of the resist film was performed as shown in FIGS.
This will be described with reference to FIG. First, the film thickness sensor 64 retracted from above the wafer W as shown by a broken line in FIG. 6 is moved by the arm 67 to the center of the wafer W. Next, while the wafer W is moved in the X-axis direction (right direction in FIG. 5) by the driving mechanism 62, laser light is irradiated from the film thickness sensor 64, and light reflected by the resist film is again reflected on the film thickness sensor. Detect at 64.

The data detected by the film thickness sensor 64 is sent to and stored in the film thickness sensor control device as needed. Eventually, when the film thickness sensor 64 is positioned above the peripheral portion of the wafer W, the wafer W stops, and the film thickness measurement also stops. In the above process, the film thickness measurement of one radius of the wafer W is performed ((a) in FIG. 7, the arrow indicates the measurement locus of the film thickness sensor 64, and the encircled numbers indicate the film thickness measurement) Is shown in the order). Next, the wafer W is rotated 90 degrees in the θ direction (counterclockwise) by the drive mechanism 62 (FIG. 7B). Next, the wafer W is moved in the negative direction of the X-axis (left direction in FIG. 5), and the film thickness is measured by the film thickness sensor 64 in the same manner. Then, when the film thickness sensor 64 moves to the center of the wafer W, the wafer W is stopped again, and the film thickness measurement is also stopped (FIG. 7C). The above measurement is performed every 90 degrees, and finally, as shown in FIG. 7D, all the film thicknesses on the orthogonal diameter are measured, and the film thickness measurement is completed when the wafer W has made one round. FIG. 7 (e)).

Next, the wafer W is moved below the irradiation section 65 by the drive mechanism 62 and stopped at a predetermined position. At this time, the arm 67 on which the film thickness sensor 64 is suspended
Is rotated by a drive mechanism (not shown), and the film thickness sensor 6
4 is retracted from above the wafer W. After that, the wafer W
Is rotated according to a predetermined recipe, and the resist coating film around the wafer W is exposed to the laser beam from the irradiation unit 65 for a specified width.

The thickness of the wafer W having undergone the peripheral exposure processing is measured again by the above-described process. At that time, the wafer W
The upper portion subjected to the peripheral exposure processing is also measured, and the data is stored in the film thickness sensor controller 68, and it is inspected from the measured film thickness whether the exposed portion is located at a predetermined position.

The wafer W after the second film thickness measurement is completed,
The wafer 50 is carried out of the exposure apparatus 51 by the carrier 50, and the inspection of the test wafer W is completed.

As described above, in the coating and developing system 1 according to the present embodiment, the peripheral exposure device 51 is provided with the film thickness measuring means. It is not necessary to take out from the system 1 and the inspection can be performed during a series of processing. Therefore, unnecessary labor and time required for transferring the wafer W can be reduced. Further, since the peripheral exposure device 51 has a mounting table 61 which is rotatable and movable in at least one direction, which is originally required for film thickness measurement, it is necessary to provide a film thickness measuring means using an existing mechanism. Therefore, the film thickness can be measured at an arbitrary point on the wafer W, and the cost can be reduced. Further, it is possible to determine whether or not the peripheral exposure has been properly performed by performing the film thickness measurement before and after the peripheral exposure processing, not only to determine whether the resist film is properly formed. Further, since the film thickness sensor 64 for measuring the film thickness is provided on the upstream side of the airflow with respect to the irradiation unit 65 for performing exposure, it is possible to prevent the film thickness sensor 64 from being contaminated and the measurement performance from being reduced. Further, since the arm 67 of the film thickness sensor 64 is rotatable and can be retracted from the wafer W during the peripheral exposure, the contamination of the film thickness sensor 64 is also prevented from this point.

Here, another embodiment of the film thickness measuring process as shown in FIG. 7 will be described. As a second embodiment, first, the start position of the film thickness measurement is set to a predetermined peripheral portion of the wafer W, and the film thickness sensor 64 operates in the same manner as in the first embodiment, and Wait at. Then, as shown in FIG. 8, while moving the wafer W in the negative direction of the X-axis (left direction in FIG. 5) by the driving mechanism 62,
The film thickness is measured by the film thickness sensor 64 fixed above the wafer W. Then, when the film thickness sensor 64 is located at the center of the wafer W, the wafer W is temporarily stopped, and the film thickness measurement is also stopped (FIG. 8A). Next, the wafer W is
The drive mechanism 62 rotates 180 degrees in the θ direction (counterclockwise direction) (FIG. 8B). Next, the wafer W is moved in the positive direction of the X-axis (the right direction in FIG. 5), and the film thickness is measured by the film thickness sensor 64 in the same manner. When the film thickness sensor 64 is located above the peripheral portion of the wafer W, the wafer W
Is stopped, and the film thickness measurement is also stopped (FIG. 8C). In this manner, the film thickness measurement on one diameter of the wafer W has been performed. Further, the sample is rotated by 90 degrees in the θ direction by the drive mechanism 62, and one diameter is measured in the same manner as in the above steps ((a) to (c) in FIG. 8) ((d) in FIG. 8,
(E)). As a result, the film thickness on the orthogonal diameter is measured as shown in FIG. 8E, and the film thickness measurement is completed when the wafer W is finally returned to the start position of the film thickness measurement (FIG. 8).
(F)). After performing the above steps and measuring the film thickness,
The same effect as in the first embodiment can be obtained.

Next, a third embodiment will be described. As shown in FIG. 9, first, the film thickness sensor 64 is moved to the center of the wafer W and waits. Therefore, the film thickness at the center of the wafer W is measured by the film thickness sensor 64 (FIG. 9A). Then, the wafer W is moved by a predetermined distance in the X direction (the right direction in FIG. 5) and stopped ((b) in FIG. 9). Therefore, the film thickness is measured while being rotated in the θ direction (counterclockwise) by the drive mechanism 62, and the film thickness measurement and rotation are stopped when the film is rotated 360 degrees (FIG. 9C). Thereafter, the wafer W is again moved in the X direction (right direction in FIG. 5) by a predetermined distance and then stopped, and similarly, the wafer W is rotated to measure the film thickness on the same circumference ( FIG. 9D). By repeating the above steps, the film thickness is measured concentrically toward the outside of the wafer W, and when the film thickness at the peripheral portion of the wafer W is measured, the measurement of the film thickness is completed ((FIG. e)).

In the third embodiment, the film thickness is measured concentrically from the center of the wafer W to the outside, but the film thickness may be measured from the outside to the center. good. The film thickness measurement is performed by irradiating a laser beam from the film thickness sensor 64 and detecting the light reflected by the resist film again by the film thickness sensor 64, even when the wafer W is moving. , May be temporarily stopped at the time of measurement. In the third embodiment, the same effect as in the first embodiment can be obtained.

A cover 75 as a protection member as shown in FIG. 10 may be attached to the film thickness sensor 64. The cover 75 is configured to be open during the film thickness measurement and closed at other times. The opening and closing of the cover 75 is performed by a drive mechanism (not shown).
8. If the cover 75 is attached, the contamination of the film thickness sensor 64 can be more reliably prevented.

In the above embodiment, the film thickness was measured before and after the peripheral exposure processing.
Alternatively, it may be performed only after the peripheral exposure processing.

The signal from the film thickness sensor 64 is sent to the film thickness sensor controller 68 and processed to output a film thickness value. However, the program of the film thickness sensor controller 68 is changed. Thus, the line width of the pattern formed on the wafer W can be obtained.

To explain the principle, a signal (for example, the intensity of reflected light) from the film thickness sensor 64 with respect to the line width is stored in advance in association with a line width of a certain numerical value. Thus, the line width on the wafer W can be obtained by comparing the signal from the film thickness sensor 64 with the stored data. In actually measuring the line width, it is more accurate to form a simple test pattern on the surface of the measurement wafer and measure the line width of the measurement wafer.

By the way, the light source used for the film thickness sensor 64 deteriorates with the passage of time, and it is inevitable that the intensity of the irradiated light also decreases with the deterioration. Film thickness sensor 64
When the intensity of light from the light is reduced, it is difficult to accurately measure the film thickness. Therefore, as shown in FIG. 11, a reflector 61a is provided on a mounting table 61 on which the wafer W is mounted. The reflector 61a is preferably embedded in the mounting table 61 so as not to hinder the mounting of the wafer W.

Then, in a state where the wafer W is not placed on a regular basis, the film thickness sensor 64 is moved onto the
Light for measurement is emitted toward the reflector 61a. Then, the intensity of light reflected from the reflector 61a can be measured. When the light source deteriorates, the intensity of the reflected light also decreases, so by measuring the intensity of the reflected light,
It is possible to know the degree of deterioration of the light source. By providing the reflector 61a on the film thickness sensor 64 in this way, it is possible to know in advance the deterioration of the light source of the film thickness sensor 64, the suitability of use, the necessity of replacement, and the like.

In the film thickness measurement process described above, it is preferable to use a test wafer as the wafer W actually used for film thickness measurement. A plurality of test wafers are stored in a dedicated cassette C in advance and are distinguished from production wafers W. Then, the timing of loading a test wafer into the coating and developing system 1 is preferably after a lot break of the production wafer W or after a predetermined number of production wafers W have been coated and developed.

For example, after performing the coating and developing process on the production wafer W of a certain lot, before performing the coating and developing process on the production wafer W of the next lot, the test wafer is coated and developed. It is put into the system 1 and a resist is applied by a resist coating device 15 or 17 and baked, and then the film thickness is measured. As a result of the measurement, when the film thickness is within a predetermined allowable range, the introduction of the production wafer W into the coating and developing processing system 1 is started.

As a result of the measurement, if the film thickness is within a predetermined allowable range, the resist coating apparatus 1 that actually performed the coating processing
For 5 or 17, necessary corrections, for example, corrections for the temperature of the resist solution, the rotation speed, the temperature of the airflow, etc.
After the correction, the resist coating device 15 or 17 performs a resist coating process on another test wafer W, and then measures the film thickness.

As a result of the measurement, when the film thickness is within a predetermined allowable range, the introduction of the production wafer W into the coating and developing processing system 1 is started. As a result of the measurement, if the film thickness is within a predetermined allowable range, necessary corrections are again performed on the resist coating apparatus 15 or 17 which has actually performed the coating process, and thereafter, the film thickness value falls within the allowable range. Until it enters, the film thickness is measured on the test wafer.

As described above, by checking the state of the resist coating units 15 and 17 on the test wafer in advance, the resist coating process on the production wafer W can always be suitably performed.

As a result of measuring the thickness of the test wafer, if the film thickness is within the allowable range, the program of the coating and developing system 1 is controlled so that the introduction of the production wafer W is automatically started. If the production wafer W is out of the allowable range, for example, an NG signal is displayed on a display or a control panel of the system, or an appropriate alarm is issued to stop the introduction of the production wafer W into the processing station 3. W defects can be prevented beforehand,
Further, it becomes possible for an operator to immediately perform necessary corrections on the resist coating devices 15 and 17.

Although the above-described embodiment relates to a wafer processing system in a lithography step of a semiconductor wafer device manufacturing process, the present invention can be applied to a substrate other than a semiconductor wafer, for example, an LCD substrate processing system.

[0067]

According to the first aspect of the present invention, the thickness of the coating film can be measured in the substrate processing system, and there is no need to provide a separate film thickness measuring device. Therefore, when inspecting the thickness of the coating film on the substrate, the time required for transport from the substrate processing system to the film thickness measuring device can be reduced. Also, since the mechanism of the conventional peripheral exposure apparatus can be used as it is, the degree of freedom in measuring the film thickness is large, and the cost is reduced.

According to the second, third or fourth aspect of the present invention, it is possible to prevent impurities such as organic substances generated from the coating film on the substrate from contaminating the sensor portion during exposure.

According to the fifth aspect of the present invention, since a laser beam having a single wavelength is used, more accurate film thickness measurement becomes possible.

According to the sixth aspect of the present invention, since the light emitting diode is used as the light source of the sensor member, the power consumption can be reduced, which leads to a reduction in cost. According to the invention of claim 7, the line width of the pattern can be measured, which is convenient.
According to the eighth aspect of the present invention, it is possible to know in advance a decrease in the capability of the film thickness measuring means.

According to the ninth to eleventh aspects of the present invention, the thickness of the coating film is measured during a series of processes in the same substrate processing system.
There is no need to transport to a separately provided film thickness measurement device,
The labor and time are reduced.

The ninth aspect of the present invention measures the thickness of the coating film before the peripheral exposure processing, and the eleventh aspect of the present invention measures the thickness of the coating film after the peripheral exposure processing. as a result,
The measured value of each film thickness can be used as a material for judging whether or not the processing up to the time of the film thickness measurement is properly performed.

Further, according to the tenth aspect of the present invention, since the film thickness measurement is performed before and after the peripheral exposure processing, the measured film thickness is used as a material for determining whether the peripheral exposure processing is appropriately performed. can do. In the case of the twelfth and thirteenth aspects, the yield with respect to the production substrate can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing an appearance of a coating and developing system according to an embodiment.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

FIG. 4 is a perspective view of the inside of a peripheral exposure apparatus in the coating and developing processing system according to the exemplary embodiment;

FIG. 5 is an explanatory longitudinal sectional view showing a configuration of a peripheral exposure apparatus in the coating and developing processing system according to the exemplary embodiment;

6 is an explanatory view of a cross section showing a configuration of the peripheral exposure apparatus of FIG. 5;

FIG. 7 is an explanatory diagram showing a time series of a film thickness measurement route on a wafer performed by the peripheral exposure apparatus according to the first embodiment.

FIG. 8 is an explanatory diagram showing a time series of a film thickness measurement route on a wafer performed by a peripheral exposure apparatus according to a second embodiment.

FIG. 9 is an explanatory diagram showing a time series of a film thickness measurement route on a wafer performed by a peripheral exposure apparatus according to a third embodiment.

FIG. 10 is an explanatory diagram when a cover of the film thickness sensor is attached to the film thickness sensor in the peripheral exposure apparatus according to the present embodiment.

FIG. 11 is a perspective view showing a state in which a reflector is provided on the mounting table.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coating and development processing system 51 Peripheral exposure apparatus 63 Rail 64 Film thickness sensor 65 Irradiation part W Wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03F 7/38 H01L 21/30 577 562 564C

Claims (13)

[Claims] A coating apparatus for coating a processing liquid on a substrate;
A peripheral exposure apparatus having a mounting table rotatable and movable in at least one direction, and irradiating light from an irradiating unit to a peripheral portion of the substrate on the mounting table to expose a coating film on the substrate; Wherein the peripheral exposure apparatus has a film thickness measuring means having a sensor member for measuring the film thickness of the coating film. 2. The apparatus according to claim 1, further comprising means for forming an airflow in the exposure apparatus, wherein the sensor member is located at least upstream of the irradiation section in the airflow. The substrate processing system as described in the above. 3. The substrate processing system according to claim 1, further comprising a protection member that covers the sensor member. 4. The substrate processing system according to claim 1, wherein said sensor member is retractable from above said substrate. 5. The substrate processing system according to claim 1, wherein a light source of the sensor member is a laser beam. 6. The substrate processing system according to claim 1, wherein the light source of the sensor member is a light emitting diode. 7. The apparatus according to claim 1, wherein said film thickness measuring means has a function of obtaining a line width of a pattern formed on a substrate. A substrate processing system according to any one of the above. 8. The apparatus according to claim 1, wherein the sensor member has a light source for measurement, and has a reflecting portion on the mounting table for reflecting light from the light source.
8. The substrate processing system according to any one of 3, 4, 5, 6 and 7. 9. A substrate processing system comprising: a peripheral exposure device that irradiates light to a peripheral portion of a substrate to expose a coating film applied to the substrate; and a device that measures a film thickness of the coating film. A method of processing a substrate, comprising: measuring a thickness of a coating film on the substrate, irradiating light to a peripheral portion of the substrate, and exposing the coating film. 10. The substrate processing method according to claim 9, wherein after exposing the coating film, the thickness of the coating film is measured again. 11. A substrate processing system comprising: a peripheral exposure device that irradiates light to a peripheral portion of a substrate to expose a coating film applied to the substrate; and a device that measures a thickness of the coating film. A method of processing a substrate, comprising: irradiating light to a peripheral portion of the substrate to expose the coating film, and then measuring a thickness of the coating film. 12. A coating apparatus for coating a coating film on a substrate, wherein a test substrate is used as the substrate for measuring the film thickness, and the measured value is within an allowable range as a result of measuring the film thickness. In some cases, a predetermined coating process is performed on the production substrate by the coating device, and when the measured value is out of an allowable range, a necessary correction is performed on the coating device. 10. The film thickness of another test substrate which has been subjected to a coating process by the coating device is measured.
12. The substrate processing method according to 10 or 11. 13. The substrate processing method according to claim 12, further comprising a step of, when the measured value is out of an allowable range, notifying the outside to the outside at the same time.