JP2001134914A - Magnetic head and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform high-density recording/reproduction in a recording medium. SOLUTION: A magnetic head 1 having a reproducing MR head and a recording electromagnetic induction type magnetic head integrally formed is provided in a rotary drum. In this magnetic head 1, track positioning is facilitated when recording/reproduction is performed in a tape recording medium by a helical scanning system.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a magnetic head provided on a rotating drum and recording and / or reproducing data on a tape-shaped recording medium by a helical scan method.

[0002]

2. Description of the Related Art A magnetic head is mounted on a magnetic recording / reproducing apparatus and records and / or reproduces information signals on a magnetic recording medium (hereinafter referred to as recording / reproducing).
As such a magnetic recording / reproducing device, for example, a video tape recorder (VTR: VideoTape Recorder) or a DAT
(Digital Audio Tape) Like a recorder, a high-speed rotating drum is equipped with a magnetic head, and a tape-shaped magnetic recording medium is slid on this drum to perform recording and reproduction by the so-called helical scan method. is there.

[0003] The magnetic head is generally constructed by winding a coil around a magnetic core formed of a magnetic material having high magnetic permeability. Such a magnetic head is called an electromagnetic induction type (inductive type) magnetic head because it performs recording and reproduction on a magnetic recording medium using electromagnetic induction between a magnetic core and a coil.

In a conventional magnetic head, a magnetic core is formed by joining and integrating a magnetic core half obtained by shaping a bulk magnetic material by machining into a magnetic gap.

However, in recent years, in the field of magnetic recording, higher recording densities of magnetic signals have been further promoted, and it is required to accurately record and reproduce fine magnetic signals. However, in the electromagnetic induction type magnetic head, since the magnetic core is shaped by machining from a bulk magnetic material, it is not possible to sufficiently narrow the track and narrow the gap, and to cope with high recording density. Can not do.

Therefore, a so-called magneto-resistive magnetic head (hereinafter, referred to as a magnetic head) has been proposed as a magnetic head corresponding to high recording density.
It is called an MR head. ) Has been proposed and put into practical use.

[0007] The MR head is a magnetic head in which a magnetoresistive effect element (hereinafter, referred to as an MR element) exhibiting a magnetoresistive effect is formed on a non-magnetic substrate, and is used exclusively for reproduction. The MR head has attracted attention as a magnetic head suitable for high recording density, because it can be miniaturized because it does not require a magnetic coil, and has high reproduction output because of its high sensitivity.

[0008]

This MR head is for reproduction only. Therefore, in order to be able to perform recording in an apparatus having an MR head, it is necessary to separately provide an electromagnetic induction type head as a recording head.

However, in the rotating drum, MR
When the head and the electromagnetic induction type head are provided separately,
A shift occurs between the recording track and the reproduction track. For this reason, it is difficult to perform high-density recording and reproduction on the recording medium.

In the above-described MR head, the magnetic shield member is formed by a plating method using permalloy as a material. This permalloy shows good soft magnetism, but has low wear resistance due to low hardness and high ductility. For this reason, MR heads are used in hard disk drives and the like as so-called floating type magnetic heads in which a magnetic recording medium does not slide. In this case, the wear of the magnetic thin film layer does not matter.

However, the MR head uses a helical scan method such as a video tape recorder, for example.
When the magnetic thin film layer is used for recording / reproducing on a recording medium, the magnetic thin film layer is significantly worn. This is because the recording medium and the MR head are directly impulsed at high speed.

When the magnetic thin film layer is worn as described above, a spacing loss occurs, and the resistance value greatly changes from an initial state, thereby deteriorating a reproduction output and an output waveform. Occurs. Further, there is also a problem that the worn magnetic thin film layer adheres to the sliding surface of the MR head, causing an electrical short circuit.

For the above reasons, when the helical scan method is employed, it is difficult to stably and accurately reproduce the MR head.

Conventionally, a magnetic shield member has been formed by a plating method. When a magnetic shield member is formed by a plating method, wet etching is performed to remove unnecessary plating. For this reason, the thin film layers formed below may be destroyed by infiltration of the wet etching solution, or the wires may be broken by over-etching.

The present invention has been made in view of the above circumstances, and it is possible to perform high-density recording / reproduction on a recording medium, and to perform a stable and accurate reproduction operation. It is an object of the present invention to provide a possible magnetic head and a method for manufacturing the same.

[0016]

In order to achieve the above-mentioned object, a magnetic head according to the present invention is provided on a rotating drum, and performs recording and / or reproduction on a tape-shaped recording medium by a helical scan method. . The magnetic head includes a magnetoresistive magnetic head formed between a pair of magnetic shield members and an electromagnetic induction magnetic head formed between a pair of magnetic shield members. The magneto-resistance effect type magnetic head and the electromagnetic induction type magnetic head are integrated.

In the magnetic head configured as described above, the positions of the recording track and the reproduction track are the same.

Further, a method of manufacturing a magnetic head according to the present invention includes a first thin film forming step, a resist film forming step, a magnetic shield film forming step, and a second thin film forming step. In the first thin film forming step, a thin film for forming a magnetoresistive head is formed on a substrate. In the resist film forming step, a resist film is formed on the first thin film so as to form a resist film opening at a part of the thin film. In the magnetic shield film forming step, a Co-based amorphous material serving as a magnetic shield member of the magnetic head is sputtered on the opening of the resist film to form a magnetic shield film. In the second thin film forming step, a thin film for forming an electromagnetic induction type magnetic head is formed on the magnetic shield film.

Therefore, according to the method of manufacturing a magnetic head according to the present invention, it is possible to form a magnetic shield member without using a plating method. For this reason, since it is not necessary to perform wet etching to remove unnecessary plating, the wet etching liquid does not destroy each thin film layer formed below. Further, disconnection due to over-etching can be avoided.

Further, according to this manufacturing method, the magnetic shield member can be formed in a smaller number of steps than in the prior art, and the productivity is improved. Further, it is possible to provide a magnetic head in which the positions of the recording track and the reproduction track are the same.

[0021]

Embodiments of the present invention will be described below in detail with reference to the drawings. Hereinafter, a magnetic head 1 to which the present invention is applied as shown in FIG. 1 will be described.

In the drawings used in the following description, the characteristic portions may be enlarged in order to clearly show the characteristics of each portion, and the dimensional ratio of each member may be the same as the actual size. Not always. In the following, the configuration, material, and the like of each thin film constituting the magnetic head 1 will be described. However, the present invention is not limited to the illustrated magnetic head 1, but may be modified according to desired purposes and performance. What is necessary is just to select the structure, material, etc. of a thin film.

As shown in FIGS. 1 and 2, the magnetic head 1 has a first substrate 2 on which a base layer 3 and a lower magnetic shield layer 4 are formed. The lower magnetic shield layer 4 is formed to a predetermined depth from the sliding surface, and is embedded in the underlayer 3. As shown in FIG. 2, the underlayer 3 and the lower magnetic shield layer 4 constitute substantially the same plane. In addition,
In FIG. 1, the illustration of the underlayer 3 is omitted.

On the lower magnetic shield layer 4, a lower gap layer 5 is laminated. On the lower gap layer 5,
The magnetoresistive thin film 6 (hereinafter referred to as MR thin film 6)
It is formed to a predetermined depth from the sliding surface.

In the longitudinal direction of the MR thin film 6, a bias layer 7
a, 7b and first electrode layers 8a, 8b are sequentially laminated. The MR thin film 6, the bias layers 7a and 7b, and the first
The electrode layers 8a and 8b are formed so as to be exposed on the sliding surface. Both ends of the MR thin film 6 are connected to the first electrode layer 8a.
And the electrode layer 8b.

A predetermined depth with respect to the sliding surface;
The first flattening layer 9 is formed at a position not exposed on the sliding surface.

FIG. 1 is a perspective view of the magnetic head 1, and FIG. 2 is a sectional view taken along line X1-X2 in FIG.
In FIG. 1, the illustration of the first planarization layer 9 is omitted. In FIG. 2, the bias layers 7a and 7b and the first
The illustration of the electrode layer 8b is omitted.

The MR thin film 6, the bias layers 7a and 7b,
The upper gap layer 1 is formed on the first electrode layers 8a and 8b.
0 and an intermediate magnetic shield layer 11 are sequentially formed. The intermediate magnetic shield layer 11 is formed so as to form substantially the same plane as the first flattening layer 9.

On the intermediate magnetic shield layer 11, a recording gap layer 12 is formed. The recording gap layer 12
It is formed excluding the butting surface 13. The intermediate magnetic shield layer 11 is combined with an upper magnetic shield layer described later at the butting surface 13. As a result, a closed magnetic circuit is formed. In addition, in FIG.
The illustration of 3 is omitted.

The recording gap layer 12 and the first flattening layer 9
The second flattening layer 14 is formed on the substrate. The second flattening layer 14 is formed except for the butted surface 13. A predetermined space is formed on the sliding surface side to form an upper magnetic shield layer described later. In FIG. 1, the illustration of the second planarization layer 14 is omitted.

On the second flattening layer 14, a first coil layer 15a, a third flattening layer 16, and a second coil layer 1
5b and the fourth planarizing layer 17 are sequentially formed.
The first coil layer 15a and the second coil layer 15b
They are connected to the second electrode layer 18a and the second electrode layer 18b, respectively. 2, illustration of the second electrode layer 18a is omitted. Also, in FIG.
The coil layer 15a and the second coil layer 15b are collectively shown as a coil layer 15.

The upper magnetic shield layer 1 is placed on the intermediate magnetic shield layer 11, the recording gap layer 12, and the fourth flattening layer 17 formed on the intermediate magnetic shield layer 11.
9 are formed. Then, a protective film 20 is formed so as to planarize the entire surface of the first substrate 2. Then, the second substrate 21 is bonded on the protective film 20. The external terminals 22a to 22d are connected to the ends of the first electrode layers 8a and 8b and the second electrode layers 18a and 18b.
Are formed.

The first substrate 2 and the second substrate 21 are made of a high-hardness non-magnetic material. Specific materials include, for example, alumina-titanium-carbide (Altic) and the like. Each of the first substrate 2 and the second substrate 21 is formed in a thin plate shape having a substantially rectangular planar shape, and has an end surface serving as a tape sliding surface 23 on which a magnetic recording medium slides. The tape sliding surface 23 is an arc-shaped curved surface having a predetermined curvature. At this time, the tape-shaped recording medium slides in the direction of arrow A.

The first substrate 2 may also have the function of a lower magnetic shield layer 4 described later. In this case, a soft magnetic material is used. As the soft magnetic material, specifically, Ni—Zn ferrite, Mn—Zn ferrite and the like are preferable. Further, the second substrate 21 may also have a function of an upper magnetic shield layer 19 described later. In this case, a magnetic material is used.

The first underlayer 3 is a layer formed for flattening when a lower magnetic shield layer 4 described later is formed. The underlayer 3 need not be formed when the first substrate 2 also functions as the lower magnetic shield layer 4 as described above.

The lower magnetic shield layer 4 and the intermediate magnetic shield layer 11 function to prevent a magnetic field outside the target of reproduction from the signal magnetic field from the magnetic recording medium from being drawn into the MR element 6.

That is, in the magnetic head 1, the MR
A signal magnetic field not to be reproduced from the thin film 6 is guided by the lower magnetic shield layer 4 and the intermediate magnetic shield layer 11, and only a signal magnetic field to be reproduced is guided to the MR thin film 6. Thereby, the high frequency characteristics and the reading resolution of the MR thin film 6 are improved.

The intermediate magnetic shield layer 11 and the upper magnetic shield layer 18 are integrated to form a magnetic core. The intermediate magnetic shield layer 11 becomes a lower core, and the upper magnetic shield layer 18 becomes an upper core.

This intermediate magnetic shield layer 11 is used as a common magnetic shield in both the MR head portion and the electromagnetic induction type magnetic head portion. Thereby, when the MR head and the electromagnetic induction effect type magnetic head are integrated, the layer structure is simplified, so that an increase in size can be prevented.

The lower magnetic shield layer 4 is made of Sendust (F
(e-Al-Si alloy) or the like, and may be formed using a material used for a magnetic shield member in a normal magnetic head. Further, similarly to the later-described intermediate magnetic shield layer and the like, it may be formed of a Co-based amorphous material. Further, as described above, the first substrate 2 is made of Ni-Zn.
When it is made of a soft magnetic material such as ferrite or Mn-Zn ferrite, the upper magnetic shield layer 4 and the first substrate 2 can also be used.

At least one of the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19 is formed of a soft magnetic layer made of a Co-based amorphous material as described later. These magnetic shield layers have a laminated structure in which a soft magnetic thin film layer made of a Co-based amorphous material and a nonmagnetic thin film layer are alternately deposited, and have a laminated structure having at least two or more magnetic thin film layers. . As a result, even when the MR head is provided on the rotating drum, it is possible to reduce the knitting wear of these magnetic shield layers.

If at least one of the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19 is formed of a soft magnetic layer made of a Co-based amorphous material layer, the other magnetic shield member will be a normal magnetic shield member. The magnetic head may be formed using a material used for a magnetic shield member. As an example, Sendust (Fe-Al
-Si alloy).

The Co-based amorphous material, as used _{herein, Co a Zr b Nb c M} d ( where, M is, Mo, Cr, T
a, Ti, Hf, Pd, W, or V. A, b, c, and d indicate atomic percent,
These are 79 ≦ a ≦ 83, 2 ≦ b ≦ 6, 10 ≦
c ≦ 14, 1 ≦ d ≦ 5, and a + b + c + d = 100
It is. ) Is desirable.
The reason is as described below.

For example, in the above-mentioned Co-based amorphous material, when M = Ta, 68 ≦ a ≦ 90, 0 ≦
b ≦ 10, 0 ≦ c ≦ 20, 0 ≦ d ≦ 10, a + b + c +
If d = 100, the soft magnetic properties are excellent. This composition is 79 ≦ a ≦ 83, 2 ≦ b ≦ 6, 10 ≦ c ≦ 14,
When 1 ≦ d ≦ 5, a + b + c + d = 100, the heat resistance, abrasion resistance, and magnetic permeability are excellent in addition to the soft magnetic characteristics. Also, the ductility is small.

Co-based amorphous materials include a, b, c,
When d is within the above-described range, the abrasion resistance is particularly excellent. When the intermediate magnetic shield layer 11 or the upper magnetic shield layer 19 is worn more than the MR thin film 6, the shield effect for guiding signals not to be reproduced is reduced. For this reason, the high frequency characteristics and the reading resolution of the MR thin film 6 are reduced.

When the ductility is large, the material of the worn intermediate magnetic shield layer 11 or the upper magnetic shield layer 19 adheres to the sliding surface 23 to cause an electrical short-circuit, or to increase the amount of spacing. There is a problem that the output increases and the output decreases. Since the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19 formed of the Co-based amorphous material described above have relatively small ductility, such a problem can be prevented.

Further, microcrystalline materials such as sendust and FeTa need to be subjected to a heat treatment at about 550 ° C. after sputtering in order to obtain excellent soft magnetic properties. MR
When the thin film 6 is subjected to a heat treatment at a temperature higher than 350 ° C., its magnetoresistance effect decreases. That is, as the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19 formed after the MR thin film 6 is formed, it is necessary to use a material which is heat-treated at 350 ° C. or lower in order to exhibit good soft magnetic characteristics. is there.

Since microcrystalline materials such as Sendust and FeTa need to be subjected to a heat treatment at a temperature higher than 350 ° C. as described above, they are not suitable as materials for the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19.

The above-mentioned Co-based amorphous material can obtain sufficiently good soft magnetic properties even immediately after sputtering. Further, by performing the heat treatment at about 300 ° C., the anisotropy between the easy axis and the hard axis can be controlled. From this, it is understood that it is desirable as a material of the intermediate magnetic shield layer 11 and the upper magnetic shield layer 19.

The above-described intermediate magnetic shield layer 11 or upper magnetic shield layer 19 has a laminated structure in which a soft magnetic thin film layer and a non-magnetic thin film layer are alternately deposited to provide the following effects. Can be obtained.

For the intermediate magnetic shield layer 11 or the upper magnetic shield layer 19, a soft magnetic material is used. In this soft magnetic thin film layer, a domain wall is formed inside. This movement of the domain wall causes a sudden change in magnetization. Barkhausen noise is a change in magnetization sensed by the MR thin film 6. As described above, when a domain wall is generated in the intermediate magnetic shield layer 11 or the upper magnetic shield layer 19, the magnetic head 1
Becomes unstable.

Here, when the soft magnetic thin film layer and the nonmagnetic thin film layer are deposited with a predetermined thickness, the soft magnetic thin film layers are magnetostatically coupled to each other, so that the energy is low and the soft magnetic thin film layer has magnetic domains. It does not occur. In this state, since there is no domain wall, a sudden change in magnetization due to the movement of the domain wall does not appear. This makes it possible to prevent the change in magnetization from being sensed as noise by the MR thin film 6, and the recording / reproducing operation of the magnetic head 1 is stabilized.

In order to make the soft magnetic thin film layers magnetostatically coupled to each other, the thickness of each of the soft magnetic thin film layer and the nonmagnetic thin film layer becomes important.

At this time, the thickness of the nonmagnetic thin film layer is 1 nm.
It is desirable that the thickness be equal to or more than 20 nm. When the nonmagnetic layer is thinner than 1 nm, sufficient insulating properties cannot be obtained, so that no magnetostatic coupling occurs between the soft magnetic thin film layers. On the other hand, when the thickness is larger than 20 nm, the insulating property becomes too large, so that the magnetostatic coupling between the soft magnetic thin film layers does not occur. Here, as the nonmagnetic thin film layer, SiO 2 was used.
_{Although 2} is used, a substance other than SiO ₂ can be used as long as it is nonmagnetic.

The thickness of the soft magnetic thin film layer is 0.1 μm
It is desirable that the thickness be not less than 1 μm. If the soft magnetic thin film layer is thinner than 0.1 μm, it becomes impossible to obtain sufficient soft magnetic properties. On the other hand, if the thickness is more than 1 μm, sufficient insulation from the non-magnetic thin film layer cannot be obtained, so that no magnetostatic coupling between the soft magnetic thin film layers occurs.

Here, the thickness of the soft magnetic thin film layer is 0.28 μm, the thickness of the nonmagnetic thin film layer is 5 nm,
Ten soft magnetic thin film layers are laminated and an intermediate magnetic shield layer 11 is formed.
The total thickness was 3 μm.

In order to stabilize the characteristics of the amorphous magnetic film, the intermediate magnetic shield layer
It is desirable to form such as. Here, the Cr layer is 2
It was formed with a thickness of about 3 nm.

Lower gap layer 5 and upper gap layer 1
0 and the recording gap layer 12 are formed in a thin film shape from a non-magnetic non-conductive material. The presence of these non-magnetic, non-conductive layers maintains insulation. As a material of the lower gap layer 5, Al ₂ O ₃ is preferably used in consideration of insulation and wear resistance. Also,
As a material of the upper gap layer 10, for example, Al
Examples include ₂ O ₃ , SiO ₂ , and TiN.

The MR thin film 6 is a magnetically sensitive part, and is a part for reading information recorded on a magnetic recording medium.

Here, the MR thin film 6 includes a first non-magnetic layer, a first soft magnetic layer, a second non-magnetic layer, a second soft magnetic layer, and a third non-magnetic layer. Are sequentially laminated from the substrate side, and configured as a so-called SAL bias type film. A first nonmagnetic layer, a second nonmagnetic layer,
As the third nonmagnetic layer, for example, Ta or the like is used.
As the first soft magnetic layer, for example, Ni—Fe or the like is used. As the second soft magnetic layer, for example, Ni—Fe—N
b etc. are used.

The MR thin film 6 is not limited to the SAL bias type film, but may be formed by various film structures such as so-called AMR and GMR as conventionally known. In the magnetic head 1, the MR thin film 6 is arranged so that the longitudinal direction is parallel to the sliding surface 23, and a sense current is supplied in a direction parallel to the sliding surface 23.

The pair of bias layers 7 a and 7 b have a function of applying a bias magnetic field to the MR thin film 6 to make the magnetic domain of the MR thin film 6 a single magnetic domain. The pair of bias layers 7a and 7b are located at both ends in the longitudinal direction of the MR thin film 6, and are each formed of a hard magnetic material. The pair of bias layers 7a and 7b are magnetically and electrically connected to both ends of the MR thin film 6, respectively. In the following description, the pair of bias layers 7a and 7b will be collectively referred to simply as the bias layer 7.

The first electrode layers 8a and 8b supply a sense current to the MR thin film 6. First electrode layers 8a, 8
b, It is formed of a conductive and low-resistance metal material into a thin film. Here, by using a material having a low resistance, the resistance value of the entire magnetic head 1 can be reduced. As a material of the first electrode layers 8a and 8b, for example, Cr, Ta, or the like is preferable. In the following description, the first electrode layers 8a and 8b are collectively referred to simply as the first electrode layers 8a and 8b.
Will be referred to as an electrode layer 8.

The first flattening layer 9, the second flattening layer 14,
The third planarization layer 16 and the fourth planarization layer 17 are formed of a non-magnetic non-conductive material. The presence of these flattening layers makes it possible to flatten the irregularities generated when each thin film layer is formed.

The coil layer 15 includes the second electrode layers 18a, 1
The information is recorded on the magnetic recording medium by the change of the sense current supplied from 8b. The coil layer 15 is formed of a conductive material such as copper.

The second electrode layers 18a and 18b supply a sense current to the first coil layer 15a and the second coil layer 15b, respectively. Second electrode layers 18a, 18
b is formed of a conductive metal material into a thin film. In the following description, the second electrode layers 18a, 18a
b will be simply referred to as a second electrode layer 18.

The protective film 20 shields the entire magnetic head 1 from the outside and eliminates a step between the element formed on the first substrate 2 and the first substrate 2 so that the magnetic head 1 and the tape-shaped recording medium It is formed to ensure stable contact with the medium. The protective layer 20 is formed of a non-magnetic, non-conductive material. Specifically, it is suitable to use Al ₂ O ₃ in consideration of environmental resistance, abrasion resistance, and the like.

The external terminals 22 a to 22 d are connected to the first electrode layer 8 and the second electrode layer 18 and supply a sense current to the MR thin film 6 and the coil layer 15.

The magnetic head 1 is used, for example, as shown in FIG. In this case, the magnetic head 1 slides on the magnetic recording medium 31 traveling in the direction of the arrow C while rotating as the rotary drum 30 rotates in the direction of the arrow B. The recording / reproduction of signal information is performed by the helical scan method.

In this magnetic head 1, actually,
The first substrate 2 and the second substrate 21 are larger than other portions. Specifically, for example, the length t1 of the tape-shaped recording medium in the running direction on the first substrate 2 is about 0.8 mm, and the width t2 of the portion where the MR head and the magnetic induction type head are formed is , About 5 μm. Therefore, it is almost the end face of the first substrate 2 and the second substrate 21 that forms the sliding surface 23 in the magnetic head 1.

In the magnetic head 1 configured as described above, an electromagnetic induction type magnetic head for recording and a magnetoresistive magnetic head for reproduction are integrated. The integrated magnetic head 1 is provided on the rotating drum 30 and can be employed in a helical scan system. Further, since the positions of the recording track and the reproduction track are the same, the track alignment can be easily performed. The azimuth angle is the same.

For this reason, in the helical scan system, tracking control is facilitated, and high-density recording / reproduction on a recording medium can be performed. This makes it possible to perform stable and accurate reproduction.

Next, a method for manufacturing a magnetic head according to the present invention will be described. In the following description, a method for manufacturing the above-described magnetic head 1 will be described. Note that, in the drawings used in the following description, in order to clearly illustrate the features, similar to FIGS. 1 to 3, the characteristic portions may be enlarged in some cases. It is not always the same. In the schematic perspective views used below, only characteristic portions of the formed film structure are shown.

In the following description, specific examples of the members constituting the magnetic head 1 and their materials, sizes, film thicknesses, and the like will be described, but the present invention is not limited to the following examples. . For example, in the following description, a so-called shield type SAL (Soft Adjacent Laye) having a structure similar to that practically used in a hard disk device or the like will be described.
r) An example using a bias type MR thin film is given below.
The R thin film is not limited to this example.

First, a method for manufacturing the reproducing MR head will be described.

When manufacturing the magnetic head 1 according to the present invention, first, a disk-shaped substrate material 40 having a diameter of, for example, 3 inches, to be the first substrate 2 is prepared. This substrate material 40
Is a guard material on the leading side, and a non-magnetic material is used. As will be described later, a number of head elements that will eventually become the magnetic head 1 are formed on the substrate material 40.

On this substrate material 40, as shown in FIG.
The first non-magnetic non-conductive film 41 which will eventually become the underlayer 3
Then, a soft magnetic metal layer 42 that will eventually become the lower magnetic shield layer 4 is formed. After the first non-magnetic non-conductive film 41 and the soft magnetic metal layer 42 have substantially the same surface, the surface is subjected to mirror polishing.

In order to serve also as the first substrate 2 and the lower magnetic shield layer 4, the substrate material 40 is made of a soft magnetic ferrite material of high hardness such as Ni—Zn ferrite or Mn—Zn ferrite. Should be used. At this time, the first non-magnetic non-conductive film 41 described above,
The formation of the soft magnetic metal layer 42 is omitted.

Next, as shown in FIGS. 5 and 6, on the first non-magnetic non-conductive film 41 and the soft magnetic metal layer 42, a second Is formed by sputtering or the like. Here, as a material of the second non-magnetic non-conductive film 43, Al ₂ O ₃ is suitable from the viewpoint of insulation properties, abrasion resistance and the like, but if it is non-magnetic and non-conductive, it is particularly preferable. It is not limited.

The thickness of the second non-magnetic non-conductive film 43 may be set to an appropriate value according to the frequency of a signal recorded on the magnetic recording medium. The method for calculating the film thickness is given by Equation 1.
As shown in FIG. In the present embodiment, the second
The thickness of the non-magnetic non-conductive film 43 is set to 100 nm.

[0081]

(Equation 1)

Next, as shown in FIGS. 7 and 8, an MR thin film layer 44 constituting the SAL bias type MR thin film 6 is formed on the second non-magnetic non-conductive film 43 by sputtering or the like. Form a film. Specifically, the MR thin film layer 44
Is, for example, a Ta layer 45 having a thickness of about 5 nm and a thickness of about 32 nm.
NiFeNb layer 46, about 5 nm thick Ta layer 47, about 30 nm thick NiFe layer 48, and about 1 nm thick Ta
The layer 49 is formed by sequentially forming a film by sputtering or the like in the above order.

In the above MR thin film layer 44, NiF
The e layer is a soft magnetic film having a magnetoresistive effect and serves as a magnetic sensing portion in the MR head. In the above MR thin film layer 44, the NiFeNb layer becomes a so-called SAL film for applying a bias magnetic field to the NiFe layer.

The material of each layer constituting the MR thin film layer 44 and the film thickness thereof are not limited to the above examples, and an appropriate material is selected according to the purpose of use of the magnetic head 1 and the like. What is necessary is just to set it to a suitable film thickness.

Next, as shown in FIGS. 9 to 11, the two rectangular permanent magnet films 50a and 50b which will eventually become the bias layers 8 are formed by MR using photolithography.
The thin film layer 44 is embedded for each magnetic head element.

The permanent magnet films 50a and 50b finally become the bias layers 7 of the above-described magnetic head 1. For example, the length t3 in the long side direction is about 50 μm, and the length t4 in the short side direction is about 50 μm. About 10 μm, and two permanent magnet films 50
It is formed so that the interval t5 between the holes a and 50b is about 5 μm. The interval t5 between these two permanent magnet films 50a and 50b finally becomes the track width of the MR thin film 6. That is, in the magnetic head 1, the track width of the MR thin film 6 is about 5 μm.

The track width of the MR thin film 6 is not limited to the above example, but may be set to an appropriate value according to the purpose of use of the magnetic head 1 and the like.

Next, as shown in FIGS. 12 to 14, the first electrode layer 8 is finally formed on the permanent magnet films 50a and 50b.
First conductive metal films 51a and 51b are formed.

The permanent magnet films 50a and 50b are
When forming the first conductive metal films 51a and 51b, for example, first, a mask having two rectangular openings for each head element 47 is formed using photoresist. Next, etching is performed to remove the MR thin film layer 44 exposed at the opening. Note that the etching here may be a dry method or a wet method, but ion etching is preferable in consideration of ease of processing and the like.

Next, the MR thin film layer 44 on which the mask is formed
The permanent magnet films 50a, 50
0b is formed. As a material of the permanent magnet films 50a and 50b, a material having a coercive force of 1000 [Oe] or more is preferable, and for example, CoNiPt or CoCrPt is suitable.

Next, the first conductive metal layers 51a, 51b
Is formed by sputtering or the like.

The thicknesses of the permanent magnet films 50a and 50b and the thicknesses of the first conductive metal layers 51a and 51b are determined by the resistance value required for the environment in which the magnetic head 1 is used and the MR head. It is determined by the track width and the like. In the present embodiment, the thicknesses of the permanent magnet films 50a and 50b are substantially the same as those of the MR thin film layer 44, and the first conductive metal layer 5
The film thicknesses of 1a and 51b were about 60 nm.

Next, the photoresist used as the mask is replaced with the permanent magnet film 50 formed on the photoresist.
a, 50b and the first conductive metal layers 51a, 51b. Thereby, as shown in FIGS. 12 to 14, the permanent magnet films 50a, 50b having a predetermined pattern are formed.
Is embedded in the MR thin film layer 44, and the permanent magnet film 50
First conductive metal layers 51a, 51b are formed on a, 50b.

Next, as shown in FIG. 15 and FIG. 16, the MR thin film layer 44 is removed by using a photolithography technique except for the portion that will eventually become the MR thin film 6, and the second
Of the conductive metal layer 52 is replaced. This second conductive metal layer 52 finally becomes first conductive metal layers 51a, 51a.
b and becomes the first electrode layer 8. At this time, the permanent magnet films 50a and 50b are also left.

Specifically, first, a resist pattern is formed on the MR thin film layer 44 and the first conductive metal films 51a and 51b. Next, the exposed MR thin film layer 44 is removed by etching. In addition, although the etching here may be either a dry method or a wet method,
Considering ease of processing and the like, ion etching is preferable.

After that, T to be the second conductive metal layer 52
Deposit i / Cu. At this time, the second conductive metal layer 5
2 and the first conductive metal layers 51a and 51b form substantially the same plane. Thereafter, by removing the resist, a second conductive metal layer 52 is formed as shown in FIG.

Next, as shown in FIGS. 17 and 18, the second conductive metal film 52 is etched to
The element 53 is formed. At this time, a predetermined U-shaped resist pattern as shown in FIG. 18 is formed. Using this resist pattern as a mask, unnecessary films are etched and removed by ion milling. Thereafter, the resist pattern is stripped.

The width t6 of the MR thin film layer 44 in the formed MR element 53 and the second conductive metal layers 52a and 52b
The length t7, the width t8, and the interval t9 can be set to appropriate values. In this embodiment, t6 is 4 μm, t7 is 2 mm, t8 is 80 μm, and t9 is 4 μm.
It was set to 0 μm. The width t6 finally becomes the depth of the MR thin film 6.

Next, as shown in FIG. 19, a third non-magnetic non-conductive film 54 is formed by sputtering or the like. The third non-magnetic non-conductive film 54 finally becomes the upper gap layer 10. The thickness of the third non-magnetic non-conductive film 54 may be set to an appropriate value according to the frequency of the recording signal. The method of calculating the film thickness is represented by Expression 2. Here, the thickness was set to 120 nm.

[0100]

(Equation 2)

Next, as shown in FIGS. 20 and 21, the second soft magnetic layer
5 is formed.

First, a method of manufacturing a soft magnetic layer, which has been performed, will be described.

First, NiFe as a plating base film is formed on the entire surface by sputtering so as to have a thickness of about 10 nm. Next, as shown in FIG. 22, a frame-shaped resist film (hereinafter, referred to as a frame-type resist film 56) having an opening at a position where the intermediate magnetic shield layer 11 is formed is formed.

The reason why such a frame-type resist film 56 is formed is to apply plating uniformly. When the resist film is formed on the entire surface of the wafer with the opening where the soft magnetic layer is formed as an opening, the area of the portion to be plated becomes small. When plating is performed in such a state, variations in film thickness, magnetic characteristics, and the like are likely to occur.

On the other hand, the frame type resist film 56
When plating is performed by forming a layer, the area of the portion to be plated becomes large, so that the film thickness and magnetic characteristics can be made uniform.

Next, the entire surface of the wafer except for the frame type resist film 56 is plated with NiFe. Next, a resist film is formed at a position where the soft magnetic layer is formed in order to remove NiFe formed at a position other than the position where the soft magnetic layer is formed. Using this resist film as a mask, NiFe is removed by wet etching. Next, the resist film is peeled off to form a soft magnetic layer.

At this time, the wet etching is performed because the time can be reduced as compared with the ion etching, and the selective etching is performed because of the selective etching.
That is, no damage is given to each thin film layer formed below by the over-etching. The wet etching solution used here is not particularly limited as long as it is generally used for etching permalloy.

However, in the method described above,
The first such as NiZn that causes irregularities in the manufacturing process
Cannot be used as the substrate material 40. this is,
This is because, depending on the depth of the concave portion, there is a possibility that the wet etching liquid will erode and destroy each thin film layer formed below.

Next, a method of manufacturing the second soft magnetic layer 55 according to the present invention will be described.

Specifically, first, as shown in FIGS. 23 and 24, a resist film is formed on the entire surface of the wafer with the opening where the intermediate magnetic shield layer 11 is formed as an opening.
At this time, the end face of the resist film in the opening is as shown in FIG.
26, or a two-layer structure as shown in FIG. 26, the upper resist film 57 needs to have a shape projecting more than the lower resist film 58. Thereby, the intermediate magnetic shield layer 11 can be formed by a lift-off method.

In FIGS. 25 to 28, illustration of each layer formed below the second nonmagnetic nonconductive film 43 is omitted.

In order to form a resist film 59 having an inverted tapered end surface at the opening (hereinafter, referred to as an inverted tapered resist layer 59), for example, Z manufactured by Zeon Corporation is used.
A reverse taper resist such as PN-1100 and AZ5214E manufactured by Clariant may be used.

The reverse tapered resist film 59 can be prepared by prebaking the resist for reverse taper as usual, exposing it to light, heating it at 110 ° C., and performing overexposure. This reverse taper type resist film 5
The manufacturing method of 9 may be a method recommended by a resist manufacturer. The heating at 110 ° C. is called reversal baking, and the excessive exposure is called reversal exposure.

In order to form a resist film having a two-layer structure, the following method may be used. First, the lower resist film 58 is formed by, for example, ARC manufactured by Brewer Science, which is usually used as an anti-reflection film. Next, the upper resist film 57 is formed by a generally used material such as AZ6108 manufactured by Clariant. The exposure is performed by a usual method, and only the development is performed for a long time to remove a large amount of the lower resist film 58, thereby forming a two-layer resist having a structure in which the upper resist film 57 projects as shown in FIG.

In the following description, a method of forming the reverse soft taper type resist film 59 and forming the second soft magnetic film 55 will be described as an example. However, in the case where a resist film having a two-layer structure is manufactured. Similarly, the second soft magnetic film 55 can be formed.

First, as shown in FIG. 27, a first non-magnetic film 60, a first amorphous film 61, a second non-magnetic film 62, and a second amorphous film 63 are sequentially formed by sputtering or the like. By forming, the second soft magnetic layer 55 is formed.

Here, the second soft magnetic layer 55 is
An amorphous film and a nonmagnetic film were formed by laminating two layers each. However, the configuration of the second soft magnetic layer 55 is
There is no particular limitation as long as the film includes at least one amorphous film and at least one nonmagnetic film.

Next, the resist film 59 and the resist film 59
The second soft magnetic layer 55 formed thereon is removed. At this time, since the resist film 59 is formed in an inverted tapered shape as described above, the resist film 5 is formed from the end face 64.
The solvent for removing 9 is soaked, and the removal of the resist film 59 is facilitated.

[0119] Here, the case where the reverse tapered resist film 59 is used has been described as an example. However, when the resist film having a two-layer structure is used, the second method is similarly performed by the lift-off method. The soft magnetic layer 55 can be formed.

Thus, a second soft magnetic layer 55 as shown in FIG. 28 is formed. At this time, the end face of the resist film is reverse tapered as shown in FIG. 25, or has a two-layer structure as shown in FIG. 26, in which the upper resist film 51 projects more than the lower resist film 52. Because
The resist film can be removed by lift-off.

As is clear from the above description, according to the method of manufacturing a magnetic head to which the present invention is applied, it is possible to form the second soft magnetic layer 55 without using a plating method. For this reason, since it is not necessary to perform wet etching to remove unnecessary plating, the wet etching liquid does not destroy each thin film layer formed below. Further, disconnection due to over-etching can be avoided.

Further, according to this manufacturing method, it is possible to form the second soft magnetic layer 55 in fewer steps as compared with the related art. Therefore, the processing ability is improved as compared with the plating method, and the productivity is excellent. Further, the intermediate magnetic shield 11 formed by this manufacturing method has a high effect as a shield.

In the magnetic head 1 having the intermediate magnetic shield 11 formed by this manufacturing method, it is possible to use NiZn having wear resistance as the first substrate 2. Therefore, it is possible to further prevent wear due to sliding of the tape-shaped recording medium. In addition, the complexity of managing the plating solution can be eliminated.

Next, a method of manufacturing an electromagnetic induction type head for recording will be described. The intermediate shield layer 11 formed as described above is used as a lower core in the magnetic core.

First, as shown in FIG. 29, a fourth non-magnetic non-conductive layer 70 which will eventually become the recording gap layer 12 is formed. The fourth non-magnetic non-conductive layer 70 is formed excluding the portion corresponding to the rear butting surface 13 described above. Here, the fourth non-magnetic non-conductive layer 70 was formed using alumina, and its thickness was 300 nm. The fourth non-magnetic non-conductive layer 70 is formed, for example, by a lift-off method using a resist film having a predetermined mask pattern.

Next, as shown in FIG.
The fifth nonmagnetic nonconductive layer 71 to be the flattening layer 9 is formed by patterning a resist resin by photolithography, for example. This fifth nonmagnetic nonconductive layer 71
The second soft magnetic layer 55 is formed so as to have the same height.
Here, the thickness of the fifth nonmagnetic nonconductive layer 71 was set to 3 μm.

Next, as shown in FIG.
The sixth nonmagnetic nonconductive layer 72 to be the flattening layer 14 is formed by patterning a resist resin by, for example, photolithography. The sixth nonmagnetic nonconductive layer 72 is
On the non-magnetic non-conductive layer 70 and the fifth non-magnetic non-conductive layer 71
The upper portion is formed except for a portion corresponding to the rear butting surface 13. Also, leave a space on the sliding surface side.
Here, the thickness of each of the sixth nonmagnetic nonconductive layers 72 is 1 μm.

Next, a heat treatment at about 280 ° C.
The non-magnetic non-conductive layer 71 and the sixth non-magnetic non-conductive layer 72 were cured. Thereby, the portion where the coil is formed is flattened. The temperature of the heat treatment is set so that the temperature of the wafer becomes 280 ° C. The heating method may be direct or indirect. In addition, as an example of the photoresist used here, AZP4000 series of Clariant, etc. are mentioned.

Next, as shown in FIG. 32, the first coil layer 73 is formed in a spiral shape with the rear abutting surface 13 as the center. The first coil layer 73 is formed by an electrolytic plating method such as a copper sulfate plating method.

At this time, first, Ti as a base for plating is formed to a thickness of 20 nm, and Cu
It is formed with a thickness of nm. Hereinafter, this base is made of Ti 20 nm.
/ Cu100nm. These are formed by a technique such as sputtering. Next, a photoresist is formed by photolithography so as to obtain a coil pattern.

Next, the surface on which the plating film is to be formed is subjected to surface treatment. This surface treatment is performed to grow the plating film uniformly, and generally, a technique such as oxygen plasma treatment or acid cleaning is used.

Next, copper plating is performed. Specifically, first, a voltage of several volts is applied between a wafer and an anode plate made of copper or the like containing phosphorus in a copper sulfate solution as a plating solution. This electrolyzes the plating solution,
A first coil layer 73 is formed by depositing copper on the wafer. Here, the thickness of the first coil layer 73 is 3.5 μm.
m.

Next, the photoresist is removed with a solvent or the like. Next, Ti 20 nm / Cu formed as a base
100 nm is removed by ion milling or the like. Thereby, a first coil layer 73 is formed.

Next, as shown in FIG. 33, in order to flatten the unevenness caused by the formation of the first coil layer 73,
Finally, a seventh non-magnetic non-conductive layer 74 to be the third planarizing layer 16 is formed. The seventh non-magnetic non-conductive layer 74 includes a fifth non-magnetic non-conductive layer.
Like the non-magnetic non-conductive layer 71, for example, after patterning a resist resin by photolithography, a heat treatment is performed so that the temperature of the wafer becomes 280 ° C.
It is formed by curing.

The resist pattern formed here has a shape that covers the entire first coil layer 73, and has a shape in which no resist pattern is formed on the rear abutting surface 13 serving as a closed magnetic path and on the sliding surface side. I do. Also, here
The thickness of the seventh non-magnetic non-conductive layer 74 formed on the first coil layer 73 was set to 1 μm to 2 μm.

The seventh nonmagnetic nonconductive layer 74 has the first
It is necessary to form a connection portion for connecting the second coil layer 73 described later with a second coil layer described later. Therefore, the innermost end of the first coil layer 73 has a sixth portion. It is necessary to pattern the resist resin so that the non-magnetic non-conductive layer 74 is not formed.

Next, as shown in FIG. 34, a second coil layer 75 is formed. Similarly to the first coil layer 73, the second coil layer 75 is formed spirally around the rear abutting surface 13 by, for example, copper sulfate plating. Here, the thickness of the second coil layer 75 was 3.5 μm, as in the first coil layer 73.

Next, as shown in FIG. 35, in order to flatten the unevenness caused by the formation of the second coil layer 75, an eighth non-magnetic layer finally serving as the fourth flattening layer 17 is formed. A non-conductive layer 76 is formed. The eighth nonmagnetic nonconductive layer 76 includes
Similarly to the fifth non-magnetic non-conductive layer 71 and the like, for example, a resist resin is patterned by photolithography, and then a heat treatment is performed so that the temperature of the wafer is 280 ° C., and the wafer is cured.

As in the case of forming the seventh non-magnetic non-conductive layer 74, the resist pattern is formed so as to cover the entire second coil layer 75 and has a rear abutting surface 13 serving as a closed magnetic path. The sliding surface had a shape in which no resist was formed. Here, the thickness of the eighth non-magnetic non-conductive layer 76 formed on the second coil layer 75 is 3 μm
It formed so that it might become.

Next, as shown in FIG. 36, a third soft magnetic layer 77 which will eventually become the upper magnetic shield layer 19 is formed on the eighth non-magnetic non-conductive layer. Third soft magnetic layer 7
Similarly to the second soft magnetic layer 55, 7 is formed by sequentially laminating a plurality of Co-based amorphous materials and a plurality of non-magnetic films. The configuration of the third soft magnetic layer 77 is such that if it has two or more amorphous films and one or more nonmagnetic films,
It is not limited at all.

First, a plurality of nonmagnetic films and a plurality of Co-based amorphous material layers are alternately formed by sputtering. Here, a third amorphous film 78, a third nonmagnetic film 79, a fourth amorphous film 80, a fourth nonmagnetic film 81, and a fifth amorphous film 81 are stacked.

Next, a mask serving as a pattern of the upper magnetic shield layer 19 was formed by photolithography.
Next, it is formed by performing etching by ion milling.

Next, connection terminals 90a to 90d which will eventually become the external terminals 22 are formed. Connection terminals 90a to 90d
Is formed by, for example, a copper sulfate plating method similarly to the first coil layer 73 and the like. First, Ti as a base for plating
20 nm / 100 nm of Cu is formed by a technique such as sputtering. Next, a resist pattern is formed by photolithography so that the shape of the connection terminal 90 is obtained.

This resist pattern is formed thicker than the step between the first non-magnetic non-conductive film 41 and the third soft magnetic layer 77. For example, the first non-magnetic non-conductive film 41
When the step between the third soft magnetic layer 77 and the third soft magnetic layer 77 is about 25 μm, the thickness of the resist pattern is preferably about 30 μm. In addition, the connection terminal 90 formed by this.
The height of a to 90d is also 30 μm.

Next, after performing the surface treatment of the plating film forming surface, plating with Cu is performed. Next, the photoresist is removed with a solvent or the like. Also, Ti 20 nm / Cu 100 nm formed as a base is scraped off by ion milling or the like.

Next, third conductive metal layers 91a and 91b which will eventually become the second electrode layers 18 are formed. The third conductive metal layers 91a and 91b also have connection terminals 90a to 90d.
Similarly to the above, it is formed by, for example, a copper sulfate plating method.
The third conductive metal layers 91a and 91b connect the first coil layer 73 and the second coil layer 75 to the connection terminals 90a to 90d, respectively, and form the first coil layer 73 and the second coil layer. A sense current is applied to the layer 75.

FIG. 37 shows a state in which the connection terminals 90a to 90d and the third soft magnetic layers 91a and 91b are formed.
In FIG. 37, the illustration of the third soft magnetic metal layer 91b of the connection terminals 90a, 90b, 90d is omitted.

At this time, a fourth conductive metal layer (not shown) is also formed. The fourth conductive metal layer is connected to the second conductive metal layer 52, and finally becomes the first electrode layer 8. 4th
Is formed by, for example, a copper sulfate plating method in the same manner as the third conductive metal layer 91 and the like. The fourth conductive metal layer includes the MR thin film 6 and the connection terminals 90a to 90
d) to perform a function of flowing a sense current to the MR thin film 6.

In the portions where the connection terminals 90a to 90d, the third conductive metal layer 91, and the fourth conductive metal layer are to be formed, a shield layer, a gap layer, and the like formed in advance are lifted off in advance. So that they do not accumulate.

Next, as shown in FIG. 38, a ninth non-magnetic non-conductive layer 92 which will eventually become the protective layer 20 is formed. The ninth nonmagnetic nonconductive layer 92 is formed by, for example, sputtering Al ₂ O ₃ .

Next, the surface of the ninth non-magnetic non-conductive layer 92 is polished until the connection terminals 90 are exposed on the surface. The polishing here is performed, for example, by polishing the surface of the connection terminal 90 with diamond abrasive having a particle diameter of about 2 μm until the surface of the connection terminal 90 is exposed, and then performing buff polishing with silicon abrasive to finish the surface to a mirror surface.

Next, as shown in FIGS. 39 and 40, the first substrate member 40 on which a number of head elements 93 are formed is removed.
The magnetic head block 94 is formed by dividing the head element 93 into strips so that the head elements 93 are arranged in the horizontal direction.

Here, the number of head elements 93 arranged in the horizontal direction is preferably as large as possible in consideration of productivity. FIG.
At 0, a magnetic head block 94 in which five head elements 93 are arranged for simplicity is shown, but in practice, more head elements 93 may be arranged. In the present embodiment, the width t10 of the magnetic head block 94 is 2 mm.

Next, as shown in FIG. 41, the second substrate 1 of the magnetic head 1 is finally placed on the magnetic head block 94.
The second substrate material 95, which is 9, is attached. The thickness t11 of the second substrate member 95 is, for example, about 0.7 mm.
For bonding the second substrate member 95, for example, a resin-based adhesive or the like is used. In FIGS. 41 and 42, the first
Each of the thin film layers formed on the substrate material 40 is omitted.

At this time, the height t12 of the second substrate 95
Is made lower than the height of the magnetic head block 94 to expose the connection terminals 90 formed on the magnetic head block 94 to the outside. Thus, the connection terminals 90a to 90d can be electrically connected to the outside.

Next, the surface which will eventually become the tape sliding surface 23 of the magnetic head 1 is subjected to cylindrical polishing, and this surface is formed into an arc shape. Specifically, cylindrical polishing is performed until the front end of the MR thin film 6 is exposed on the tape sliding surface 23 and the depth of the MR thin film 6 reaches a predetermined length. As a result, as shown in FIG.
The surface which becomes the tape sliding surface 23 is an arc-shaped curved surface.

The curved surface shape of the tape sliding surface 23 formed by this cylindrical polishing process may be an optimal shape according to the tape tension and the like, and is not particularly limited.

Finally, as shown in FIG. 43, the magnetic head block 94 is divided for each head element 93. Specifically, for example, the magnetic head block 94 is tilted at an angle θ so that the length in the direction in which the magnetic recording medium slides is about 0.8 mm, the width is about 300 μm, and the height is about 2 mm. Divide each time. Thereby, many magnetic heads 1 previously shown in FIG. 1 are obtained. Note that θ is the same as the azimuth angle.

When actually using the magnetic head 1 manufactured as described above, the magnetic head 1 is first attached to a chip base. Next, the terminals provided on the chip base and the connection terminals 22 a to 22
22d is electrically connected. Next, the magnetic head 1 mounted on the chip base is mounted on the rotating drum 30. Thereby, it can be used.

As is clear from the above description, according to the method of manufacturing the magnetic head 1 to which the present invention is applied, it is possible to form the second soft magnetic layer 50 without using the plating method. For this reason, since it is not necessary to perform wet etching to remove unnecessary plating, the wet etching liquid does not destroy each thin film layer formed below. Further, disconnection caused by over-etching can be avoided.

Further, according to this manufacturing method, the intermediate magnetic shield layer 11 can be formed in a smaller number of steps than in the related art. Therefore, the processing ability is improved as compared with the plating method, and the productivity is excellent.

Further, according to this manufacturing method, in a helical scan type recording / reproducing apparatus having a rotating drum, high-density recording / reproducing can be performed on a recording medium, and high precision can be stably performed. It is possible to provide a magnetic head capable of performing an accurate reproduction.

[0163]

As is apparent from the above description, in the magnetic head according to the present invention, the magnetic head in which the reproducing MR head and the recording electromagnetic induction type magnetic head are integrated is a rotating drum. It is provided in.

As a result, in the recording / reproducing apparatus provided with the rotating drum, the positions of the recording track and the reproducing track become the same. For this reason, it becomes easy to perform tracking control, and it is possible to perform high-density recording and reproduction on a recording medium. Also, stable and accurate reproduction can be performed.

In the method of manufacturing a magnetic head according to the present invention, it is possible to form a magnetic shield member without using a plating method. For this reason, since it is not necessary to perform wet etching to remove unnecessary plating, the wet etching liquid does not destroy each thin film layer formed below. Further, disconnection due to over-etching can be avoided.

Further, in a recording / reproducing apparatus having a rotating drum, a magnetic head capable of performing high-density recording / reproducing on a recording medium and capable of stably performing high-precision reproducing. Can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view of a magnetic head to which the present invention is applied.

FIG. 2 is a sectional view taken along line X1-X2 of FIG.

FIG. 3 is a perspective view showing a state where the magnetic head is attached to a rotating drum.

FIG. 4 is a diagram for explaining a manufacturing process of the magnetic head.
FIG. 3 is an enlarged sectional view of a main part showing a state where a first soft magnetic layer and a first nonmagnetic nonconductive layer are formed on a substrate.

FIG. 5 is a diagram illustrating a manufacturing process of the magnetic head.
FIG. 4 is an enlarged sectional view of a main part showing a state where a non-magnetic non-conductive film is formed.

FIG. 6 is a diagram illustrating a manufacturing process of the magnetic head.
FIG. 3 is a perspective view showing a state where a non-magnetic non-conductive film is formed.

FIG. 7 is a diagram for explaining a manufacturing process of the magnetic head.
FIG. 3 is an enlarged sectional view of a main part showing a state where an MR thin film layer is formed.

FIG. 8 is a diagram for explaining a manufacturing process of the magnetic head.
It is a perspective view showing the state where the MR thin film layer was formed.

FIG. 9 is a diagram illustrating a manufacturing process of the magnetic head.
It is a perspective view showing the state where a pair of permanent magnet films were formed.

FIG. 10 is a diagram illustrating a manufacturing process of the magnetic head, and is an enlarged plan view illustrating a portion B in FIG. 9;

FIG. 11 is a view for explaining the manufacturing process of the magnetic head, and is a cross-sectional view taken along line X3-X4 in FIG. 10;

FIG. 12 is a diagram illustrating a manufacturing process of the magnetic head, and is a perspective view illustrating a state where a pair of first conductive electrode layers is formed.

13 is a diagram for explaining a manufacturing process of the magnetic head, and is an enlarged plan view showing a portion C in FIG. 12;

FIG. 14 is a view for explaining the manufacturing process of the magnetic head, and is a cross-sectional view taken along line X5-X6 in FIG.

FIG. 15 is a diagram for explaining a manufacturing process of the magnetic head, and is a perspective view showing a state where a second conductive metal layer is formed.

FIG. 16 is a diagram illustrating a manufacturing process of the magnetic head, and is an enlarged plan view showing a portion D in FIG. 15;

FIG. 17 is a diagram illustrating a manufacturing step of the magnetic head, and is a perspective view illustrating a state where the MR element is formed.

FIG. 18 is a diagram illustrating a manufacturing process of the magnetic head, and is an enlarged plan view showing a portion E in FIG. 17;

FIG. 19 is a diagram illustrating a manufacturing process of the magnetic head, and is a perspective view illustrating a state where a third nonmagnetic non-conductive layer is formed.

FIG. 20 is a diagram illustrating a manufacturing process of the magnetic head, and is a perspective view illustrating the entire state in which a second soft magnetic layer is formed.

FIG. 21 is a diagram illustrating a manufacturing process of the magnetic head, and is an enlarged plan view illustrating a portion F in FIG. 20;

FIG. 22 is a view for explaining a conventional magnetic head manufacturing process, and is a plan view showing a state where a frame-shaped resist film for forming a second soft magnetic layer is formed.

FIG. 23 is a diagram illustrating a manufacturing process of the magnetic head, and is a perspective view illustrating a state where a resist film for forming a second soft magnetic layer is formed.

FIG. 24 is a diagram for explaining a manufacturing process of the magnetic head, and is an enlarged plan view showing a portion G in FIG. 23;

FIG. 25 is a diagram for explaining the manufacturing process of the magnetic head, and is a cross-sectional view taken along line X7-X8 in FIG. 24 when a reverse tapered resist is formed.

FIG. 26 is a diagram for explaining a manufacturing process of the magnetic head, and shows a X in FIG. 24 when a two-layer resist is formed.
It is a 7-X8 line sectional view.

FIG. 27 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a second soft magnetic layer is formed.

FIG. 28 is a view illustrating a step of manufacturing the magnetic head, and is a cross-sectional view showing a state where the resist has been removed;

FIG. 29 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a fourth non-magnetic non-conductive layer is formed.

FIG. 30 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a fifth non-magnetic non-conductive layer is formed.

FIG. 31 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a sixth non-magnetic non-conductive layer is formed.

FIG. 32 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where the first coil layer is formed.

FIG. 33 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a seventh non-magnetic non-conductive layer is formed;

FIG. 34 is a view illustrating a manufacturing process of the magnetic head, and is a cross-sectional view showing a state where the second coil layer is formed.

FIG. 35 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where an eighth non-magnetic non-conductive layer is formed;

FIG. 36 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a third soft magnetic layer is formed.

FIG. 37 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where connection terminals and a third conductive metal layer are formed.

FIG. 38 is a view illustrating a manufacturing step of the magnetic head, and is a cross-sectional view showing a state where a ninth nonmagnetic non-conductive layer is formed.

FIG. 39 is a diagram illustrating a manufacturing step of the magnetic head, and is a plan view illustrating a first substrate material on which a number of head elements are formed.

FIG. 40 is a diagram illustrating the manufacturing process of the magnetic head, and is a plan view illustrating the magnetic head block in which a large number of head elements are cut so as to be arranged in a horizontal direction.

FIG. 41 is a diagram illustrating a manufacturing step of the magnetic head, and is a perspective view illustrating a magnetic head block to which a second substrate material is attached.

FIG. 42 is a diagram illustrating the manufacturing process of the magnetic head, and is a perspective view showing a magnetic head block in which a sliding surface is subjected to grinding processing;

FIG. 43 is a view illustrating the manufacturing process of the magnetic head, and a plan view showing a method of dividing the magnetic head block;

[Explanation of symbols]

REFERENCE SIGNS LIST 1 magnetic head, 2 first substrate, 4 lower magnetic shield layer, 5 lower gap layer, 6 MR thin film, 7 bias layer, 8 first electrode layer, 10 upper gap layer, 11
Intermediate magnetic shield layer, 12 recording gap layer, 15
Coil layer, 19 upper magnetic shield layer, 20 protective layer, 2
1 second substrate, 22 external terminals, 23 sliding surface

Claims (8)

[Claims] 1. A magnetic head provided on a rotary drum and performing recording and / or reproduction on a tape-shaped recording medium by a helical scan method, comprising: a magnetoresistive effect type magnetic head formed between a pair of magnetic shield members; A magnetic induction type magnetic head formed between a pair of magnetic shield members, wherein the magnetoresistive effect type magnetic head and the electromagnetic induction type magnetic head are integrally formed. head. 2. A thin film layer constituting a magnetoresistive effect type magnetic head, a first magnetic shield member, a thin film layer constituting an electromagnetic induction type magnetic head, and a second magnetic shield member are formed on a substrate. The magnetic head according to claim 1, wherein the first magnetic shield member is used as a common shield member between the magnetoresistive effect type magnetic head and the electromagnetic induction type magnetic head. 3. The magnetic head according to claim 1, wherein the first and / or second magnetic shield member includes a soft magnetic thin film layer formed of a Co-based amorphous material layer. 4. The Co-based amorphous material comprises Co _a
Zr _b Nb _c M _d (where, M is, Mo, Cr, Ta, T
i, Hf, Pd, W, or V. Also, a,
b, c, and d indicate atomic percentages, which are 79 ≦ a ≦ 83, 2 ≦ b ≦ 6, 10 ≦ c ≦ 1 respectively.
4, 1 ≦ d ≦ 5, and a + b + c + d = 100. 4. The magnetic head according to claim 3, wherein the magnetic head is made of a material having the following composition. 5. The first and / or second magnetic shield member has a laminated structure in which a soft magnetic thin film layer formed of the Co-based amorphous material and a nonmagnetic thin film layer are alternately deposited, 5. A laminated structure having at least two soft magnetic thin film layers.
The magnetic head as described. 6. The soft magnetic thin film layer has a thickness of 0.1.
6. The magnetic head according to claim 5, wherein the diameter is not less than 1 μm and not more than 1 μm. 7. The non-magnetic thin film layer has a thickness of 1 nm.
6. The thickness is not less than 20 nm and not more than 20 nm.
The magnetic head as described. 8. A method for manufacturing a magnetic head, comprising the steps of: forming a magnetoresistive effect type magnetic head on a substrate;
A resist film forming step of forming a resist film opening on a part of the first thin film on the first thin film; and a Co-based amorphous material serving as a magnetic shield member of the magnetic head, A magnetic shield film forming step of forming a magnetic shield film by sputtering at an opening of the resist film; and a second thin film forming step of forming an electromagnetic induction type magnetic head on the magnetic shield member. Manufacturing method of a magnetic head.