JP2001105299A - Abrasive pad with window - Google Patents

Abrasive pad with window

Info

Publication number
JP2001105299A
JP2001105299A JP28115399A JP28115399A JP2001105299A JP 2001105299 A JP2001105299 A JP 2001105299A JP 28115399 A JP28115399 A JP 28115399A JP 28115399 A JP28115399 A JP 28115399A JP 2001105299 A JP2001105299 A JP 2001105299A
Authority
JP
Japan
Prior art keywords
polishing
polishing pad
region
light
light transmitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP28115399A
Other languages
Japanese (ja)
Inventor
Hisao Koike
尚生 小池
Akihiko Ikeda
章彦 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Corp filed Critical Asahi Kasei Corp
Priority to JP28115399A priority Critical patent/JP2001105299A/en
Publication of JP2001105299A publication Critical patent/JP2001105299A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/12Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an abrasive pad having excellent evenness of polishing and capable of optically detecting the end of polishing, and to provide a polishing end detecting method and a polishing device using the same. SOLUTION: In an abrasive pad to be used for chemical mechanical polishing device, a polishing layer of the abrasive pad has a polishing area having bubbles and a light permeable area having bubbles, and hole ratio of the polishing area (A1) and the hole ratio of the light permeable area (A2) are set so as to satisfy the relation A1>A2>0.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ウエハ表面の凹凸
をケミカルメカニカル研磨で平坦化する際に使用される
研磨パッドに関し、詳しくは、研磨状況等を光学的手段
により検知するための窓を有する研磨パッド、それを用
いた研磨の終点検知方法、およびそれを備えた研磨装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing pad used for flattening irregularities on the surface of a wafer by chemical mechanical polishing, and more particularly to a polishing pad having a window for detecting a polishing state or the like by optical means. The present invention relates to a polishing pad, a method of detecting an end point of polishing using the same, and a polishing apparatus having the same.

【0002】[0002]

【従来の技術】半導体装置を製造する際には、ウエハ表
面に導電性膜を形成し、フォトリソグラフィー、エッチ
ング等をすることにより配線層を形成する形成する工程
や、配線層の上に層間絶縁膜を形成する工程等が行わ
れ、これらの工程によってウエハ表面に金属等の導電体
や絶縁体からなる凹凸が生じる。近年、半導体集積回路
の高密度化を目的として配線の微細化や多層配線化が進
んでいるが、これに伴い、ウエハ表面の凹凸を平坦化す
る技術が重要となってきた。
2. Description of the Related Art When a semiconductor device is manufactured, a conductive film is formed on a wafer surface, and a wiring layer is formed by photolithography, etching, or the like, or an interlayer insulating film is formed on the wiring layer. Steps for forming a film and the like are performed, and these steps cause irregularities made of a conductor or an insulator such as a metal on the wafer surface. In recent years, miniaturization of wiring and multi-layer wiring have been promoted for the purpose of increasing the density of semiconductor integrated circuits. With this, technology for flattening unevenness on the surface of a wafer has become important.

【0003】ウエハ表面の凹凸を平坦化する方法として
は、従来、ケミカルメカニカル研磨(Chemical
Mechanical Polishing:以下C
MPという)法が採用されている。CMP法は、ウエハ
の被研磨面を研磨パッドの研磨面に押し付けた状態で、
砥粒が分散されたスラリー状の研磨剤(以下、スラリー
という)を用いて研磨する技術である。CMP法で使用
する研磨装置は、例えば、図1に示すように、研磨パッ
ド1を支持する研磨定盤2と、被研磨材(ウエハ)5を
支持する支持台(ポリシングヘッド)6と、研磨剤の供
給機構を備えている。研磨パッド1は、例えば、両面テ
ープ(図示せず)で貼り付けることにより、研磨定盤2
に装着される。研磨定盤2と支持台6とは、それぞれに
支持された研磨パッド1と被研磨材5が対向するように
配置され、それぞれに回転軸8、9を備えている。ま
た、支持台6側には、被研磨材5を研磨パッド1に押し
付けるための加圧機構が設けてある。
Conventionally, as a method of flattening unevenness on the surface of a wafer, chemical mechanical polishing (Chemical polishing) has been used.
Mechanical Polishing: C
MP method). In the CMP method, a surface to be polished of a wafer is pressed against a polishing surface of a polishing pad,
This is a technique for polishing using a slurry-type abrasive in which abrasive grains are dispersed (hereinafter, referred to as slurry). A polishing apparatus used in the CMP method includes, for example, as shown in FIG. 1, a polishing platen 2 supporting a polishing pad 1, a support table (polishing head) 6 supporting a workpiece (wafer) 5, and a polishing machine. An agent supply mechanism is provided. The polishing pad 1 is attached, for example, with a double-sided tape (not shown) to form a polishing platen 2.
Attached to. The polishing platen 2 and the support base 6 are arranged so that the polishing pad 1 and the workpiece 5 respectively supported are opposed to each other, and are provided with rotating shafts 8 and 9 respectively. Further, a pressure mechanism for pressing the workpiece 5 against the polishing pad 1 is provided on the support base 6 side.

【0004】このようなCMPプロセスを行う上で、ウ
エハ表面の平坦度の判定の問題がある。すなわち、希望
の表面特性や平面状態に到達した時点を検知する必要が
ある。このような検知については、様々な方法が用いら
れているが、CMPプロセス時に、その場で、希望の表
面特性や厚さが得られた時点を検出できる方法が望まれ
ている。その中で代表的なものとしては、光学的検知手
段、具体的には、光ビームを研磨パッド越しにウエハに
照射して、その反射によって発生する干渉信号をモニタ
することによる研磨の終点を検知する方法が挙げられ
る。
In performing such a CMP process, there is a problem of determining the flatness of the wafer surface. That is, it is necessary to detect a desired surface characteristic or a point in time when the plane state is reached. Various methods are used for such detection, but a method capable of detecting a point at which a desired surface characteristic or thickness is obtained on the spot during a CMP process is desired. A typical example is an optical detecting means, specifically, detecting an end point of polishing by irradiating a wafer with a light beam through a polishing pad and monitoring an interference signal generated by its reflection. Method.

【0005】このような方法では、ウエハの表面層の厚
さの変化をモニターして、表面凹凸の近似的な深さを知
ることによって、終点が決定される。このような厚さの
変化が凹凸の深さに等しくなった時点で、CMPプロセ
スを終了させる。また、このような光学的手段による研
磨の終点検知法およびその方法に用いられる研磨パッド
については、USP5,605,760号、及びUSP
5,893,796号に記載されたものが提案されてき
た。
In such a method, the end point is determined by monitoring the change in the thickness of the surface layer of the wafer and knowing the approximate depth of the surface irregularities. When such a change in thickness becomes equal to the depth of the unevenness, the CMP process is terminated. Further, a method of detecting the end point of polishing by such an optical means and a polishing pad used in the method are disclosed in US Pat. No. 5,605,760 and US Pat.
No. 5,893,796 has been proposed.

【0006】USP5,605,760号では、固体で
均質な190nmから3900nmの光を透過する透明
なポリマーシートを少なくとも一部分に有する研磨パッ
ドが、また、USP5,893,796号では段付の透
明プラグが挿入された研磨パッドが開示されている。い
ずれも終点検知用の窓として用いることが開示されてお
り、研磨中のスラリーによる光の散乱を抑制するため、
透明シート、及びプラグの表面の位置(高さ)は研磨面
とほぼ同じ位置(高さ)になるように構成されている。
US Pat. No. 5,605,760 discloses a polishing pad having at least a portion of a solid, uniform, transparent polymer sheet which transmits light of 190 to 3900 nm, and US Pat. No. 5,893,796 discloses a stepped transparent plug. Is disclosed. Both are disclosed to be used as windows for end point detection, and to suppress scattering of light by slurry during polishing,
The position (height) of the surface of the transparent sheet and the plug is configured to be substantially the same position (height) as the polished surface.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、前述の
窓付き研磨パッドは、本質的に窓部と研磨領域の構造が
異なるため、窓部と研磨領域では研磨性能が異なり、研
磨の均一性が損なわれる恐れもある。また、窓部が硬質
材料で有れば、スクラッチ発生の原因にもなりかねな
い。本発明は、光学的に研磨の終点検知が可能で、か
つ、研磨の均一性が良好な研磨パッド、それを用いた研
磨の終点検知方法、およびそれを備えた研磨装置を提供
することを目的とする。
However, in the above-mentioned polishing pad with a window, since the structure of the window and the polishing region is essentially different, the polishing performance differs between the window and the polishing region, and the uniformity of polishing is impaired. There is also a risk of being caught. Further, if the window is made of a hard material, it may cause scratches. An object of the present invention is to provide a polishing pad capable of optically detecting an end point of polishing and having good polishing uniformity, a method of detecting an end point of polishing using the same, and a polishing apparatus having the same. And

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に、本願は以下の発明を提供する。 (1)ケミカルメカニカル研磨装置に用いられる研磨パ
ッドにおいて、該研磨パッドの研磨層が気泡を有する研
磨領域と気泡を有する光透過領域を有し、かつ、研磨領
域の気孔率(A1)と光透過領域の気孔率(A2)の関
係が、A1>A2>0である事を特徴とする研磨パッ
ド。 (2)研磨パッドが熱可塑性樹脂発泡体から成ることを
特徴とする(1)記載の研磨パッド。 (3)研磨層の研磨領域における平均気泡径(B1)と
光透過領域における平均気泡径(B2)の関係がB1>
B2であることを特徴とする(1)または(2)に記載
の研磨パッド。 (4)光透過領域が光透過型支持層により支持されてい
ることを特徴とする(1)、(2)、または(3)記載
の研磨パッド。
In order to solve the above-mentioned problems, the present application provides the following inventions. (1) In a polishing pad used in a chemical mechanical polishing apparatus, a polishing layer of the polishing pad has a polishing region having bubbles and a light transmitting region having bubbles, and the porosity (A1) and light transmission of the polishing region. A polishing pad, wherein the relationship of porosity (A2) in the region is A1>A2> 0. (2) The polishing pad according to (1), wherein the polishing pad is made of a thermoplastic resin foam. (3) The relationship between the average cell diameter (B1) in the polishing area of the polishing layer and the average cell diameter (B2) in the light transmission area is B1>
The polishing pad according to (1) or (2), which is B2. (4) The polishing pad according to (1), (2) or (3), wherein the light transmission region is supported by a light transmission type support layer.

【0009】(5)光透過型支持層が、お互いに異なる
少なくとも2種の材料から構成される複合シートから形
成されており、その複合シートの水平断面が、海部に複
数の光透過性を有し、光伝送路を担う島部が配置された
構造であって、パッドの下面から光透過領域下面にわた
って海部と島部の境界面が垂直に形成されており、島部
の材料の屈折率(n1)と、海部と島部の境界部分の屈
折率(n2)の関係がn1>n2であることを特徴とす
る(1)ないし(4)のいずれかに記載の研磨パッド。 (6)(1)ないし(5)のいずれかに記載の研磨パッ
ドの光透過領域を研磨終点の検知用窓に用いることを特
徴とする、ケミカルメカニカル研磨における研磨終点の
検知方法。 (7)(1)ないし(6)のいずれかに記載の研磨パッ
ドを備えたケミカルメカニカル研磨装置。
(5) The light transmitting type support layer is formed of a composite sheet composed of at least two different materials, and the horizontal cross section of the composite sheet has a plurality of light transmissive portions in the sea. In this structure, an island portion that serves as an optical transmission path is disposed, and a boundary surface between the sea portion and the island portion is formed vertically from the lower surface of the pad to the lower surface of the light transmission region, and the refractive index of the material of the island portion ( The polishing pad according to any one of (1) to (4), wherein the relationship between n1) and the refractive index (n2) at the boundary between the sea part and the island part is n1> n2. (6) A method for detecting the polishing end point in chemical mechanical polishing, wherein the light transmitting region of the polishing pad according to any one of (1) to (5) is used as a window for detecting the polishing end point. (7) A chemical mechanical polishing apparatus comprising the polishing pad according to any one of (1) to (6).

【0010】以下、本発明を詳細に説明する。本発明の
研磨パッドは、レーザ光が透過可能な気泡含有光透過領
域を有している。光透過領域は研磨領域と同様に気泡を
有するため、表面にスラリーを保持し、研磨面として作
用する機能を有する。このため、気泡の存在しない透明
シートの窓と比べて、研磨領域と光透過領域の研磨性能
の差が小さくなり、研磨均一性が向上する。また、光透
過領域が研磨領域と同様に多孔性で有れば、気泡の存在
しない透明シートの窓と比べて、スクラッチの発生も抑
制可能である。
Hereinafter, the present invention will be described in detail. The polishing pad of the present invention has a bubble-containing light transmitting region through which laser light can pass. Since the light transmitting region has bubbles like the polishing region, it has a function of holding the slurry on the surface and acting as a polishing surface. Therefore, the difference in polishing performance between the polishing region and the light transmitting region is smaller than that of a window of a transparent sheet in which no bubbles exist, and polishing uniformity is improved. In addition, if the light transmitting region is porous like the polishing region, the occurrence of scratches can be suppressed as compared with a window of a transparent sheet in which no bubbles exist.

【0011】本来、研磨層として用いられるような多孔
性(気泡含有)シートは、その中に存在する気泡によっ
て光の散乱が生じるために、白色化している、すなわ
ち、透明性において透明シートよりも劣るのが通常であ
る。そのため、光透過領域において、研磨の均一性の要
求と光の透過性の要求は相反するものとなっている。し
かしながら、本発明者は、上記で述べた本発明の構成を
採用することにより、気泡を有する光透過領域を用いた
としても、レーザ光を透過させることができることを見
出した。
[0011] A porous (bubble-containing) sheet originally used as a polishing layer is whitened, that is, has a higher transparency than a transparent sheet, because light scattering is caused by bubbles present therein. Usually inferior. Therefore, in the light transmitting region, the demand for uniformity of polishing and the demand for light transmittance are in conflict. However, the present inventor has found that by employing the above-described configuration of the present invention, laser light can be transmitted even when a light transmitting region having bubbles is used.

【0012】この場合重要なことは、光透過領域の垂直
方向に存在する気泡の径と数である。垂直方向に同一の
数の気泡が存在する場合は、気泡径が小さい方が、レー
ザ光の散乱を抑制する。もちろん、気泡径が光の波長以
下であれば、光が散乱しないため、レーザ光の透過性に
おいて問題とはならない。また、同一の気泡径であって
も、垂直方向に存在する気泡の数が少なければ、気泡に
よるレーザ光の散乱を抑制できる。
In this case, what is important is the diameter and the number of bubbles existing in the vertical direction of the light transmitting region. When the same number of bubbles are present in the vertical direction, the smaller the bubble diameter, the more the scattering of laser light is suppressed. Of course, if the bubble diameter is equal to or smaller than the wavelength of light, the light is not scattered, so that there is no problem in the transmittance of the laser light. In addition, even if the bubble diameter is the same, if the number of bubbles existing in the vertical direction is small, scattering of laser light by the bubbles can be suppressed.

【0013】本発明では、研磨の終点検知が十分に行え
るような気泡含有光透過領域を、その気孔率によって規
定している。この気孔率は、発泡体体積中に存在する気
泡の占める体積で表される数値であり、気泡径と気泡数
によって決定される。本発明において、気泡含有光透過
領域の気孔率の好ましい範囲は、0%よりも大きく80
%以下であり、より好ましくは、10%以上75%以下
であり、さらに好ましくは、30%以上60%以下であ
る。
In the present invention, a bubble-containing light transmitting region for sufficiently detecting the end point of polishing is defined by its porosity. The porosity is a numerical value represented by the volume occupied by the bubbles present in the foam volume, and is determined by the bubble diameter and the number of bubbles. In the present invention, the preferred range of the porosity of the bubble-containing light transmitting region is more than 0% and 80%.
%, More preferably 10% or more and 75% or less, and still more preferably 30% or more and 60% or less.

【0014】本発明に用いられる気泡を有する光透過領
域の作成方法としては、種々の方法が考えられるが、具
体的な例を以下に説明する。まず一つの例は、図2に示
すように、同一の両面テープ74上に、研磨領域71に
用いられる発泡体よりは気孔率の低い発泡体を光透過領
域72として貼り合わせることである。また別の具体例
としては、図3に示すように、研磨パッドが熱可塑性樹
脂発泡体から形成されている場合、該研磨パッドの所望
の位置に、所望のサイズで、加熱・圧縮成型する事で、
気孔率が低下した光透過領域72を作成する事ができ
る。また、この場合は研磨パッドの研磨面には、研磨領
域71と光透過領域72が同一材料で、同一面に、切れ
目無く形成されているため、研磨中にスラリーが研磨パ
ッド裏面に浸透することはなく、両面テープの劣化や研
磨の均一性の低下を抑制することが可能となる。
Various methods are conceivable as a method for forming the light transmitting region having bubbles used in the present invention, and specific examples will be described below. First, as shown in FIG. 2, as shown in FIG. 2, a foam having a porosity lower than that of the foam used for the polishing area 71 is bonded as the light transmitting area 72 on the same double-sided tape 74. As another specific example, as shown in FIG. 3, when the polishing pad is formed from a thermoplastic resin foam, heat and compression molding is performed at a desired position on the polishing pad in a desired size. so,
The light transmission region 72 with reduced porosity can be created. Also, in this case, the polishing area 71 and the light transmitting area 72 are formed of the same material on the polishing surface of the polishing pad and are formed on the same surface without a break, so that the slurry permeates the polishing pad back surface during polishing. However, it is possible to suppress the deterioration of the double-sided tape and the decrease in the uniformity of polishing.

【0015】更に、光透過領域が、図3に示すように、
両面テープと光透過領域の間で中空を形成する場合は、
必要に応じて、図4のように光透過領域の下層に光透過
型の材料で、所望の圧縮特性を持つ支持層を形成させる
ことができる。また、光透過領域作成における加熱・圧
縮成型をパッド裏面からの片面加熱で行えば、図5に示
すようにパッドの裏面のみ気孔率が低下し、研磨面の気
孔率は研磨領域と同等となるため、さらなる研磨の均一
性の向上が図れる。
[0015] Further, as shown in FIG.
When forming a hollow between the double-sided tape and the light transmission area,
If necessary, as shown in FIG. 4, a support layer having desired compression characteristics can be formed of a light-transmitting material below the light-transmitting region. Also, if the heating and compression molding in forming the light transmitting region is performed by one-side heating from the back surface of the pad, the porosity of only the back surface of the pad is reduced as shown in FIG. Therefore, the polishing uniformity can be further improved.

【0016】本発明の研磨パッドの光透過領域、研磨領
域に用いられる材料の例としては、熱可塑性、熱硬化性
どちらの樹脂でも作成可能であるが、上述したような加
熱・圧縮成型への適用性を考慮すると、熱可塑性樹脂が
好ましい。これらの熱可塑性樹脂発泡体には、架橋体も
含まれる。また、これらの中でも、オレフィン系樹脂、
フッ素系樹脂、ポリカーボネート樹脂、アクリル樹脂、
ナイロン樹脂、ポリウレタン樹脂、エチレン−酢酸ビニ
ル共重合体等から選ばれた1種または2種以上の混合物
を母材とした発泡体が挙げられる。
As an example of the material used for the light transmitting area and the polishing area of the polishing pad of the present invention, either a thermoplastic resin or a thermosetting resin can be prepared. Considering applicability, thermoplastic resins are preferred. These thermoplastic resin foams also include crosslinked products. Also, among these, olefin resins,
Fluorine resin, polycarbonate resin, acrylic resin,
Examples of the foam include a base material of one or a mixture of two or more selected from a nylon resin, a polyurethane resin, an ethylene-vinyl acetate copolymer, and the like.

【0017】上記のオレフィン系樹脂としては、例え
ば、高密度ポリエチレン、低密度ポリエチレン、及び線
状低密度ポリエチレンなどのポリエチレン、エチレンプ
ロピレン共重合体、ポリプロピレン、ポリ−4−メチル
−ペンテン、アイオノマー樹脂が挙げられる。上記のフ
ッ素樹脂としては、例えば、ポリフッ化ビニル、ポリフ
ッ化ビニリデン、フッ化ビニリデン−ヘキサフルオロプ
ロピレン共重合体、フッ化ビニリデン−テトラフルオロ
エチレン共重合体、エチレン−テトラフルオロエチレン
共重合体、テトラフルオロエチレン−ヘキサフルオロプ
ロピレン共重合体、テトラフルオロエチレン−パーフル
オロメチル−パーフルオロビニルエーテル共重合体、テ
トラフルオロエチレン−パーフルオロエチル−パーフル
オロビニルエーテル共重合体、テトラフルオロエチレン
−パーフルオロプロピル−パーフルオロビニルエーテル
共重合体等が挙げられる。
Examples of the olefin resin include polyethylene such as high-density polyethylene, low-density polyethylene, and linear low-density polyethylene, ethylene-propylene copolymer, polypropylene, poly-4-methyl-pentene, and ionomer resin. No. Examples of the fluororesin include polyvinyl fluoride, polyvinylidene fluoride, vinylidene fluoride-hexafluoropropylene copolymer, vinylidene fluoride-tetrafluoroethylene copolymer, ethylene-tetrafluoroethylene copolymer, and tetrafluoroethylene. Ethylene-hexafluoropropylene copolymer, tetrafluoroethylene-perfluoromethyl-perfluorovinyl ether copolymer, tetrafluoroethylene-perfluoroethyl-perfluorovinyl ether copolymer, tetrafluoroethylene-perfluoropropyl-perfluorovinyl ether And copolymers.

【0018】これらの中でも、研磨性能、耐久性の観点
からフッ素系樹脂の発泡体を用いることが好ましい。前
述の光透過領域の下層に用いられる支持層としては、レ
ーザ光の散乱を抑制できる透明なシートが用いられる。
これらの材料としては、無機系、有機系どちらの材料
も、レーザ光の散乱に影響がない範囲で用いることが可
能である。無機系では石英やガラスを用いることができ
るし、有機系の樹脂材料では研磨領域、光透過領域の発
泡体に用いる材料の他、研磨の均一性を考慮して、適度
な弾性を持つ透明ゴムシートとして、例えば、フッ素ゴ
ム、シリコンゴム、ポリウレタンエラストマー等も用い
ることができる。
Of these, it is preferable to use a fluororesin foam from the viewpoint of polishing performance and durability. As a support layer used as a lower layer of the above-mentioned light transmission region, a transparent sheet capable of suppressing scattering of laser light is used.
As these materials, both inorganic and organic materials can be used as long as they do not affect the scattering of laser light. For inorganic materials, quartz or glass can be used.For organic resin materials, in addition to the material used for the foam in the polishing area and light transmission area, transparent rubber with appropriate elasticity in consideration of polishing uniformity As the sheet, for example, fluorine rubber, silicone rubber, polyurethane elastomer or the like can be used.

【0019】また、光透過型支持層として、お互いに異
なる少なくとも2種の材料から構成される複合シートか
ら形成されており、その複合シートの水平断面が、海部
に複数の光透過性を有し、光伝送路を担う島部が配置さ
れた構造であって、パッドの下面から光透過量域にわた
って海部と島部の境界面が垂直に形成されており、島部
の材料の屈折率(n1)と、海部と島部の境界部分の屈
折率(n2)の関係がn1>n2である複合材料を用い
ることもできる。
The light-transmitting support layer is formed of a composite sheet composed of at least two different materials, and the horizontal cross section of the composite sheet has a plurality of light-transmitting portions in the sea. , An island portion serving as an optical transmission line is arranged, the boundary surface between the sea portion and the island portion is formed vertically from the lower surface of the pad to the light transmission amount region, and the refractive index of the material of the island portion (n1 ) And a composite material in which the relationship between the refractive index (n2) of the boundary portion between the sea portion and the island portion is n1> n2.

【0020】このような複合材料の具体例として、無機
やプラスチックの光ファイバを接着剤、もしくはクラッ
ド層を利用して束ねて、スライスした物を用いることも
可能である。この場合、マルチコア型プラスチック光フ
ァイバを用いることは本発明の好ましい実施形態の一つ
である。また、支持層として、多孔体中の気泡に、屈折
率が同等の液体を充填させた透明の多孔体シート、例え
ば、セルロースアセテート多孔膜にグリセリンを含浸さ
せたものや、非常に微細な気泡を持つ透明の多孔体シー
トを用いることも可能である。
As a specific example of such a composite material, an inorganic or plastic optical fiber may be bundled by using an adhesive or a cladding layer and sliced. In this case, the use of a multi-core plastic optical fiber is one of the preferred embodiments of the present invention. Further, as a support layer, a bubble in the porous body, a transparent porous sheet filled with a liquid having the same refractive index, for example, a cellulose acetate porous membrane impregnated with glycerin, or very fine bubbles. It is also possible to use a transparent porous sheet having the same.

【0021】光透過領域の研磨パッドへの固定方法とし
ては、光透過領域と研磨パッドの接合面を接着剤で固定
する方法や、定盤に研磨パッドを貼り付ける両面テープ
を利用する方法、具体的には、研磨パッドに設けた開口
部に相対する両面テープ上に、光透過領域をそのまま貼
り付ける方法や、両面テープに研磨パッド開口部より小
さい開口部を形成し、その部分にシートを固着させる方
法が挙げられる。もちろん、パッドの一部を加熱・圧縮
成型によって光透過領域を作成した場合は、研磨領域と
一体物であるので、特別の固定作業を行う必要はない。
As a method of fixing the light transmitting region to the polishing pad, a method of fixing the bonding surface between the light transmitting region and the polishing pad with an adhesive, a method of using a double-sided tape for attaching the polishing pad to a surface plate, Specifically, a method of sticking the light transmission area on the double-sided tape opposite to the opening provided in the polishing pad, or forming an opening smaller than the polishing pad opening on the double-sided tape and fixing the sheet to that part There is a method to make it. Of course, when a light transmission area is created by heating and compression molding a part of the pad, it is not necessary to perform a special fixing operation because it is integral with the polishing area.

【0022】次に、本発明の研磨パッドを用いた研磨の
終点検知方法を図6、図7を参照して説明する。図6
は、本発明の終点検出装置を有するCMP研磨装置の一
例を示す概略側面図である。光透過領域72が定盤の孔
と相対する位置にセットされ、ポリシングヘッド6の並
進運動に関わらず、研磨中にウエハ5が見える様に位置
決めされている。レーザー干渉計3は定盤の窓の下に設
置され、レーザー干渉計3から発振されたレーザー光4
が定盤の孔及び、光透過領域72を通り、スラリー(図
示せず)を介してウエハ5の表面に当たる。例えば、ウ
エハはシリコン基板の上に酸化物層が形成されたもので
ある場合は、ウエハ5の表面に当たったレーザー光は一
部酸化物層表面で反射し、第1の反射レーザー光を形成
する。
Next, a method of detecting the end point of polishing using the polishing pad of the present invention will be described with reference to FIGS. FIG.
1 is a schematic side view showing an example of a CMP polishing apparatus having an end point detection device according to the present invention. The light transmitting area 72 is set at a position facing the hole of the surface plate, and is positioned so that the wafer 5 can be seen during polishing regardless of the translational movement of the polishing head 6. The laser interferometer 3 is installed below the window of the surface plate, and the laser light 4 oscillated from the laser interferometer 3
Passes through the holes of the platen and the light transmitting region 72 and hits the surface of the wafer 5 via slurry (not shown). For example, when the wafer has an oxide layer formed on a silicon substrate, a part of the laser light hitting the surface of the wafer 5 is reflected on the surface of the oxide layer to form a first reflected laser light. I do.

【0023】入射光の一部は酸化物層を透過し、酸化物
層とシリコン基板の界面で反射し、第2の反射レーザー
光を形成する。第1と第2の反射光が合成される際、位
相関係が酸化物層の厚みの関数として表される。この干
渉光が干渉計3に入射し研磨状態が解析できる。図7は
ビームスプリッターを用い干渉計の位置を変えた例であ
る。
Part of the incident light passes through the oxide layer and is reflected at the interface between the oxide layer and the silicon substrate, forming a second reflected laser beam. When the first and second reflected lights are combined, the phase relationship is expressed as a function of the thickness of the oxide layer. This interference light enters the interferometer 3 and the polishing state can be analyzed. FIG. 7 shows an example in which the position of the interferometer is changed using a beam splitter.

【0024】[0024]

【発明の実施の形態】以下、本発明の具体的な実施形態
の例を示す。 (1)気孔率の測定方法 水没法によって求めたフォームの密度(ρf)と樹脂密
度(ρp)から以下の式で求める 気孔率(%)=(ρp―ρf)/ρp×100
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of the present invention will be described. (1) Measurement method of porosity Porosity (%) = (ρp−ρf) / ρp × 100 calculated from the density (ρf) of the foam and the resin density (ρp) obtained by the submersion method.

【0025】[0025]

【実施例1】(1)パッドの作成 ポリフッ化ビニリデン(融点168℃、MFR2.9
(230℃、12.5kg))を、加熱押し出し成形に
よって、1.1mm厚みのシートを成形する。該シート
を500KVの電子線照射機を用いて、15Mradで
電子線を照射して、架橋させる。該架橋済シートを圧力
容器に入れ、発泡剤としてテトラフルオロエタンを圧入
し、70℃で30時間保持する。該発泡剤含浸済シート
を、遠赤外線ヒーターを備えた温度200℃の加熱炉中
に保持して、該シートを発泡させる。該発泡シートの気
孔率は75%で、平均気泡径は80ミクロンである。該
発泡シートを#240のベルトサンダーで、両面バフ研
磨し、所望の大きさに切り出し、該研磨パッドに同心円
形状の溝(溝幅0.2mm、溝深さ0.5mm、溝ピッ
チ1.5mm)を切削加工によって溝付研磨パッドを作
成する。
Example 1 (1) Preparation of Pad Polyvinylidene fluoride (melting point 168 ° C., MFR 2.9)
(230 ° C., 12.5 kg)) by heating and extruding to form a 1.1 mm thick sheet. The sheet is irradiated with an electron beam at 15 Mrad using an electron beam irradiation machine of 500 KV to crosslink. The crosslinked sheet is placed in a pressure vessel, and tetrafluoroethane is injected as a foaming agent and kept at 70 ° C. for 30 hours. The sheet impregnated with the foaming agent is held in a heating furnace equipped with a far-infrared heater at a temperature of 200 ° C. to foam the sheet. The foam sheet has a porosity of 75% and an average cell diameter of 80 microns. The foamed sheet is buff-polished on both sides with a # 240 belt sander, cut into a desired size, and concentric grooves (groove width 0.2 mm, groove depth 0.5 mm, groove pitch 1.5 mm) are formed on the polishing pad. ) To form a grooved polishing pad by cutting.

【0026】(2)光透過領域の作成 上記(1)で得られる研磨パッドを所望の位置に、横
5.1cm、縦1.2cmの金型を220℃に加熱し、
圧縮成型し、光透過領域を作成する。光透過領域の厚み
は0.5mmで、気孔率は41%である。その後、研磨
パッドに両面テープを貼る。 (3)ウエハ研磨,終点検知 上記(2)で得られる光透過領域を有する研磨パッドを
アプライドマテリアルズ社製Mirraに、定盤の孔と
光透過領域の位置が合うように研磨パッドの両面テープ
を用いて定盤に貼り付ける。スラリーにはロデール社製
ILD−1200を用いて、TEOS(テトラエチルオ
ルソシリケート)膜が最表面にあるウエハーを研磨する
と、研磨中に膜厚の測定が可能であり、それによって終
点検知が可能である。
(2) Creation of light transmitting region The polishing pad obtained in the above (1) is heated to 220 ° C. at a desired position by heating a mold having a width of 5.1 cm and a length of 1.2 cm to 220 ° C.
Compression molding to create a light transmitting area. The thickness of the light transmitting region is 0.5 mm, and the porosity is 41%. Then, a double-sided tape is attached to the polishing pad. (3) Wafer polishing and end point detection The double-sided tape of the polishing pad having the light transmitting region obtained in the above (2) is placed on a mirra manufactured by Applied Materials Co., Ltd. so that the hole of the surface plate and the light transmitting region are aligned. Paste on the surface plate using. When a wafer having a TEOS (tetraethylorthosilicate) film on the outermost surface is polished using the ILD-1200 manufactured by Rodale as the slurry, the film thickness can be measured during the polishing, and thereby the end point can be detected. .

【0027】[0027]

【発明の効果】本発明の研磨パッドを用いてCMP研磨
を行うと、終点検知が可能で、光透過領域でもスラリー
を表面に保持して、ウエハの研磨を行う事ができる。従
って、研磨の均一性が十分に維持されるという効果があ
る。また、本発明の研磨パッドを用いれば、スクラッチ
の発生も抑制できる。
When CMP polishing is performed using the polishing pad of the present invention, the end point can be detected, and the wafer can be polished while holding the slurry on the surface even in the light transmitting region. Therefore, there is an effect that uniformity of polishing is sufficiently maintained. Further, the use of the polishing pad of the present invention can also suppress the occurrence of scratches.

【図面の簡単な説明】[Brief description of the drawings]

【図1】CMP研磨で使用する従来の研磨装置の一例を
示す概略構成図。
FIG. 1 is a schematic configuration diagram showing an example of a conventional polishing apparatus used in CMP polishing.

【図2】本発明の気泡を有する光透過領域の一例を示す
概略断面図
FIG. 2 is a schematic cross-sectional view showing an example of a light transmitting region having bubbles according to the present invention.

【図3】本発明の気泡を有する光透過領域の一例を示す
概略断面図
FIG. 3 is a schematic cross-sectional view showing an example of a light transmitting region having bubbles according to the present invention.

【図4】本発明の気泡を有する光透過領域の一例を示す
概略断面図
FIG. 4 is a schematic cross-sectional view showing an example of a light transmitting region having bubbles according to the present invention.

【図5】本発明の気泡を有する光透過領域の一例を示す
概略断面図
FIG. 5 is a schematic cross-sectional view showing an example of a light transmitting region having bubbles according to the present invention.

【図6】本発明の終点検出装置を有するCMP研磨装置
の一例を示す概略側面図。
FIG. 6 is a schematic side view showing an example of a CMP polishing apparatus having an end point detection device of the present invention.

【図7】図6の装置の窓部分の断面略図であって、レー
ザ干渉計がレーザービームを照射して反射干渉ビームを
検出する状態を示す図。
7 is a schematic cross-sectional view of a window portion of the apparatus of FIG. 6, showing a state in which a laser interferometer irradiates a laser beam and detects a reflected interference beam.

【符号の説明】[Explanation of symbols]

1 研磨パッド 2 定盤 3 レーザ干渉計 4 レーザビーム 5 被研磨材(ウエハ) 6 被研磨材(ウエハ)支持台[ポリシングヘッド] 71 研磨領域 72 光透過領域 73 気泡 74 両面テープ 75 支持層 8,9 回転軸 10 検出器 11 研磨剤(スラリー) 12 ビームスプリッター DESCRIPTION OF SYMBOLS 1 Polishing pad 2 Surface plate 3 Laser interferometer 4 Laser beam 5 Material to be polished (wafer) 6 Material to be polished (wafer) support base [polishing head] 71 Polishing area 72 Light transmission area 73 Bubbles 74 Double-sided tape 75 Support layer 8, Reference Signs 9 Rotating shaft 10 Detector 11 Abrasive (slurry) 12 Beam splitter

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 ケミカルメカニカル研磨装置に用いられ
る研磨パッドにおいて、該研磨パッドの研磨層が気泡を
有する研磨領域と気泡を有する光透過領域を有し、か
つ、研磨領域の気孔率(A1)と光透過領域の気孔率
(A2)の関係が、A1>A2>0である事を特徴とす
る研磨パッド。
1. A polishing pad used in a chemical mechanical polishing apparatus, wherein a polishing layer of the polishing pad has a polishing region having bubbles and a light transmitting region having bubbles, and a porosity (A1) of the polishing region. A polishing pad, wherein the relationship of the porosity (A2) of the light transmitting region is A1>A2> 0.
【請求項2】 研磨パッドが熱可塑性樹脂発泡体から成
ることを特徴とする請求項1記載の研磨パッド。
2. The polishing pad according to claim 1, wherein the polishing pad is made of a thermoplastic resin foam.
【請求項3】 研磨層の研磨領域における平均気泡径
(B1)と光透過領域における平均気泡径(B2)の関
係がB1>B2であることを特徴とする請求項1または
2に記載の研磨パッド。
3. The polishing method according to claim 1, wherein the relationship between the average cell diameter (B1) in the polishing region of the polishing layer and the average cell diameter (B2) in the light transmitting region is B1> B2. pad.
【請求項4】 光透過領域が光透過型支持層により支持
されていることを特徴とする請求項1、2、または3記
載の研磨パッド。
4. The polishing pad according to claim 1, wherein the light transmitting region is supported by a light transmitting type support layer.
【請求項5】 光透過型支持層が、お互いに異なる少な
くとも2種の材料から構成される複合シートから形成さ
れており、その複合シートの水平断面が、海部に複数の
光透過性を有し、光伝送路を担う島部が配置された構造
であって、パッドの下面から光透過領域下面にわたって
海部と島部の境界面が垂直に形成されており、島部の材
料の屈折率(n1)と、海部と島部の境界部分の屈折率
(n2)の関係がn1>n2であることを特徴とする請
求項1ないし4のいずれかに記載の研磨パッド。
5. The light-transmitting support layer is formed of a composite sheet composed of at least two different materials, and the horizontal section of the composite sheet has a plurality of light-transmitting portions in the sea. , An island portion serving as an optical transmission path is arranged, the boundary surface between the sea portion and the island portion is formed vertically from the lower surface of the pad to the lower surface of the light transmission region, and the refractive index of the material of the island portion (n1 The polishing pad according to any one of claims 1 to 4, wherein a relationship between (i) and a refractive index (n2) of a boundary portion between the sea portion and the island portion is n1> n2.
【請求項6】 請求項1ないし5のいずれかに記載の研
磨パッドの光透過領域を研磨終点の検知用窓に用いるこ
とを特徴とする、ケミカルメカニカル研磨における研磨
終点の検知方法。
6. A method for detecting a polishing end point in chemical mechanical polishing, wherein a light transmitting region of the polishing pad according to claim 1 is used as a window for detecting a polishing end point.
【請求項7】 請求項1ないし5のいずれかに記載の研
磨パッドを備えたケミカルメカニカル研磨装置。
7. A chemical mechanical polishing apparatus comprising the polishing pad according to claim 1.
JP28115399A 1999-10-01 1999-10-01 Abrasive pad with window Withdrawn JP2001105299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28115399A JP2001105299A (en) 1999-10-01 1999-10-01 Abrasive pad with window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28115399A JP2001105299A (en) 1999-10-01 1999-10-01 Abrasive pad with window

Publications (1)

Publication Number Publication Date
JP2001105299A true JP2001105299A (en) 2001-04-17

Family

ID=17635107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28115399A Withdrawn JP2001105299A (en) 1999-10-01 1999-10-01 Abrasive pad with window

Country Status (1)

Country Link
JP (1) JP2001105299A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504260A (en) * 2002-10-28 2006-02-02 キャボット マイクロエレクトロニクス コーポレイション Transparent porous material for chemical mechanical polishing
JP2008512006A (en) * 2004-09-01 2008-04-17 キャボット マイクロエレクトロニクス コーポレイション Polishing pad with microporous region
JP2010023181A (en) * 2008-07-18 2010-02-04 Fujibo Holdings Inc Polishing pad and its manufacturing method
KR101109211B1 (en) * 2003-06-17 2012-01-30 캐보트 마이크로일렉트로닉스 코포레이션 Polishing pad with oriented pore structure
KR101166455B1 (en) * 2009-03-30 2012-07-19 코오롱인더스트리 주식회사 Method of manufacturing polishing pad and polishing pad manufactured thereof
KR101173996B1 (en) * 2012-02-06 2012-08-16 코오롱인더스트리 주식회사 polishing pad
WO2015026614A1 (en) * 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Polishing pad with porous interface and solid core, and related apparatus and methods

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504260A (en) * 2002-10-28 2006-02-02 キャボット マイクロエレクトロニクス コーポレイション Transparent porous material for chemical mechanical polishing
JP2010166078A (en) * 2002-10-28 2010-07-29 Cabot Microelectronics Corp Transparent porous material for chemical mechanical polishing
JP2015193077A (en) * 2002-10-28 2015-11-05 キャボット マイクロエレクトロニクス コーポレイション transparent porous materials for chemical mechanical polishing
KR101109211B1 (en) * 2003-06-17 2012-01-30 캐보트 마이크로일렉트로닉스 코포레이션 Polishing pad with oriented pore structure
JP2008512006A (en) * 2004-09-01 2008-04-17 キャボット マイクロエレクトロニクス コーポレイション Polishing pad with microporous region
JP2010023181A (en) * 2008-07-18 2010-02-04 Fujibo Holdings Inc Polishing pad and its manufacturing method
KR101166455B1 (en) * 2009-03-30 2012-07-19 코오롱인더스트리 주식회사 Method of manufacturing polishing pad and polishing pad manufactured thereof
KR101173996B1 (en) * 2012-02-06 2012-08-16 코오롱인더스트리 주식회사 polishing pad
WO2015026614A1 (en) * 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Polishing pad with porous interface and solid core, and related apparatus and methods

Similar Documents

Publication Publication Date Title
JP5221340B2 (en) Multilayer polishing pad material for CMP
TWI295949B (en) Multi-layer polishing pad material for cmp
US9017140B2 (en) CMP pad with local area transparency
JP3867844B2 (en) Polishing pad and polishing apparatus
TWI323207B (en) Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method
JP4904027B2 (en) Polishing pad
JP2012109616A (en) Polishing pads
JP5223336B2 (en) Polishing pad and polishing apparatus
JP5474093B2 (en) Polishing pad having window support and polishing system
US20050148183A1 (en) Polishing pad, platen hole cover, polishing apparatus, polishing method, and method for fabricating semiconductor device
JP2015512799A (en) Polishing pad having light transmission region stable to light
TWI474894B (en) Laminated polishing pad and manufacturing method thereof
JP5745504B2 (en) Polishing pad window processing
JP2001105299A (en) Abrasive pad with window
JP2001062703A (en) Polishing pad with porous resin window
JP2011520634A (en) Polishing pad having end window, system using the same, and method of use
WO2012077592A1 (en) Chemical mechanical polishing pad and chemical mechanical polishing method using same
JP2005012182A (en) Polishing table of chemical mechanical polishing device, method for monitoring chemical mechanical polishing process using the same, method for detecting termination using the same, and its manufacturing method
JP2001110762A (en) Polishing pad
JP7117310B2 (en) Polishing pad and manufacturing method thereof
JP2000349053A (en) Polishing pad with groove
JP2005001059A (en) Polishing laminate
JP6697977B2 (en) Polishing pad and polishing method using the same
JP5145683B2 (en) Polishing method, polishing pad, and manufacturing method of polishing pad
JP2001068436A (en) Polishing device with resin insert

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20061205