JP2001097734A - Quartz glass container and method for producing the same - Google Patents
Quartz glass container and method for producing the sameInfo
- Publication number
- JP2001097734A JP2001097734A JP27881299A JP27881299A JP2001097734A JP 2001097734 A JP2001097734 A JP 2001097734A JP 27881299 A JP27881299 A JP 27881299A JP 27881299 A JP27881299 A JP 27881299A JP 2001097734 A JP2001097734 A JP 2001097734A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- container
- glass container
- synthetic quartz
- manufactured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/02—Pure silica glass, e.g. pure fused quartz
- C03B2201/03—Impurity concentration specified
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は石英ガラス製容器お
よびその製造方法に係わり、特に合成石英ガラスブロッ
クから切り出されて製造される石英ガラス製容器および
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass container and a method of manufacturing the same, and more particularly, to a quartz glass container cut out from a synthetic quartz glass block and manufactured, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、半導体の高集積化に伴い、その製
造プロセス、シリコン基板に高清浄度が要求されてい
る。2. Description of the Related Art In recent years, as semiconductors have become more highly integrated, a high degree of cleanliness has been required for the manufacturing process and silicon substrates.
【０００３】特に、Ｓｉのバンドギャプ中に準位を形成
し、半導体の特性の大きな影響を与えるＦｅ、Ｎｉ、Ｃ
ｒ等の重金属や、半導体表面でイオンキャリアとして存
在し、電気的リークを引き起こすＮａ、Ｋ等のアルカリ
金属については、その汚染度の許容量は極めて低く抑え
られている。[0003] In particular, Fe, Ni, C, which form a level in the band gap of Si and greatly affect the characteristics of the semiconductor.
Regarding heavy metals such as r and alkali metals such as Na and K which exist as ion carriers on the semiconductor surface and cause electrical leakage, the allowable amount of contamination is extremely low.
【０００４】このため、製造プロセス、半導体ウェーハ
に対する金属汚染には厳しい管理が行われており、例え
ば特開平１０−１１１２２６号公報に開示されているよ
うに、環境からの微粒子による汚染や、試料容器からの
汚染を防止しながら、溶液試料の溶媒を除去して濃縮す
る、超微量不純物成分分析のための溶媒試料の溶媒除去
・濃縮方法および不純物定量法が行われている。For this reason, strict control is performed on the manufacturing process and metal contamination on the semiconductor wafer. For example, as disclosed in Japanese Patent Application Laid-Open No. H10-111226, contamination by fine particles from the environment, A solvent removal / concentration method and an impurity quantification method of a solvent sample for ultra-trace impurity component analysis, which removes and concentrates a solvent of a solution sample while preventing contamination from water, have been performed.
【０００５】また、特開平１０−２０９１０６号公報に
開示されているように、ビーカ内の半導体ウェーハおよ
び薬液の硫酸液をヒータにより加熱することにより、シ
リコン基板内の金属不純物を除去する洗浄方法が行われ
ている。Further, as disclosed in Japanese Patent Application Laid-Open No. 10-209106, a cleaning method for removing metal impurities in a silicon substrate by heating a semiconductor wafer in a beaker and a sulfuric acid solution of a chemical solution by a heater is disclosed. Is being done.
【０００６】従来、上記理化学用容器や半導体製造用容
器に用いられる石英製ガラス容器の製造は、石英ガラス
製パイプおよび板状の材料を使用し、これらを火炎加工
により、所定の形状に成形して製造していた。Conventionally, in the manufacture of quartz glass containers used for the above-mentioned physical and chemical containers and semiconductor manufacturing containers, quartz glass pipes and plate-like materials are used, and these are formed into a predetermined shape by flame processing. Had been manufactured.
【０００７】例えば、最も金属不純物汚染が少ないＶＡ
Ｄ法（Ｖａｐａｒ−Ｐｈａｓｅ Ａｘｉａｌ ｄｅｐｏ
ｓｉｔｉｏｎ：気相軸付け法）により製造された合成石
英ガラスインゴットを材料とする場合でも、合成石英ガ
ラスインゴット→製管→酸水素火炎加工の工程を経るて
石英ガラス製容器を形成するため、石英ガラスへの金属
不純物の二次汚染が避けられない。[0007] For example, VA with the least contamination of metal impurities
Method D (Vapar-Phase Axial depo)
Even when the synthetic quartz glass ingot manufactured by the method (phase: vapor phase shafting method) is used as a material, a quartz glass container is formed through a process of a synthetic quartz glass ingot → pipe making → oxyhydrogen flame processing. Secondary contamination of glass with metallic impurities is inevitable.
【０００８】つまり、製管時、酸水素火炎加工時いずれ
においても、加熱処理を行うために、例えば、製管ノズ
ルや酸水素バーナ中の不純物が石英ガラス製容器の特に
表層に、また多くの場合その中心付近に至るまで金属不
純物が混入することが避けられなかった。In other words, in both the pipe making and the oxy-hydrogen flame processing, in order to perform the heat treatment, for example, impurities in the pipe making nozzle or the oxy-hydrogen burner are deposited particularly on the surface layer of the quartz glass container, In this case, it is inevitable that metal impurities are mixed in the vicinity of the center.
【０００９】上記のような従来の製造方法によって製造
されたＶＡＤ法石英ガラス製ビーカの内表面の化学分析
の測定結果では、Ｃａ：４．１ｐｐｂ、Ｎａ：３．９ｐ
ｐｂ、Ｆｅ：３．６ｐｐｂ、Ｋ：３．４ｐｐｂと金属不
純物の二次汚染が認められる。According to the results of chemical analysis of the inner surface of the VAD quartz glass beaker manufactured by the above-described conventional manufacturing method, Ca: 4.1 ppb, Na: 3.9 p
Secondary contamination of pb, Fe: 3.6 ppb, K: 3.4 ppb and metal impurities was observed.
【００１０】つまり、合成石英ガラスインゴットの段階
では、各不純物元素の含有量は＜０．１ｐｐｂであり、
製管、酸水素火炎加工を経るために完成段階での不純物
濃度が著しく増加する。That is, at the stage of the synthetic quartz glass ingot, the content of each impurity element is <0.1 ppb,
Due to pipe making and oxyhydrogen flame processing, the impurity concentration in the completed stage is significantly increased.
【００１１】高分析精度の要求が比較的緩やかな状況で
は、従来の製造方法により製造された理化学容器を用い
て、分析を行っても問題はなかったが、上述のように高
分析精度が要求されるようになると、理化学容器から薬
液中に溶け出す金属不純物が問題になってくる。In a situation where the demand for high analysis accuracy is relatively moderate, there is no problem in performing analysis using a physicochemical container manufactured by a conventional manufacturing method, but as described above, high analysis accuracy is required. In such a case, metal impurities dissolved from the physical and chemical containers into the chemical solution become a problem.
【００１２】また、半導体製造工程においても、多くの
石英製容器が用いられているが、従来の製造方法により
製造された半導体用容器を用いて、半導体の製造を行う
と半導体用容器から溶け出す、あるいは高温環境下で拡
散する金属不純物により、半導体が汚染され所定特性の
半導体が得られない場合があり、製造歩留を低下させる
おそれがあった。In the semiconductor manufacturing process, many quartz containers are used. When a semiconductor is manufactured using a semiconductor container manufactured by a conventional manufacturing method, the semiconductor melts out of the semiconductor container. Alternatively, the semiconductor may be contaminated by a metal impurity diffused in a high-temperature environment, and a semiconductor having predetermined characteristics may not be obtained.
【００１３】[0013]
【発明が解決しようとする課題】そこで、使用中に金属
不純物が溶け出さないもしくは高温環境下で金属不純物
が拡散しない石英ガラス製容器およびその製造方法が要
望されていた。Therefore, there is a need for a quartz glass container in which metal impurities do not dissolve during use or in which metal impurities do not diffuse in a high-temperature environment, and a method of manufacturing the same.
【００１４】本発明は上記事情に鑑みて発明されたもの
で、使用中に金属不純物が溶け出さないもしくは高温環
境下で金属不純物が拡散しない石英ガラス製容器および
その製造方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a quartz glass container in which metal impurities do not dissolve during use or in which metal impurities do not diffuse in a high-temperature environment, and a method of manufacturing the same. And
【００１５】[0015]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１の発明は、任意の厚さ：ｔを有する
石英ガラス容器であって、表面から２０μｍの厚さ領域
および１／２ｔの±１０μｍの厚さ領域いずれにおいて
も、Ｎａ、Ｍｇ、Ａｌ、Ｋ、Ｃａ、Ｃｒ、Ｆｅ、Ｎｉ、
ＣｕおよびＺｎ濃度がいずれも０．１ｐｐｂ未満である
ことを特徴とする石英ガラス製容器であることを要旨と
している。Means for Solving the Problems An object of the present invention is to provide a quartz glass container having an arbitrary thickness: t, a region having a thickness of 20 μm from the surface, and a thickness of 1 / t. Na, Mg, Al, K, Ca, Cr, Fe, Ni,
The gist is that the container is made of quartz glass, characterized in that the Cu and Zn concentrations are both less than 0.1 ppb.
【００１６】本願請求項２の発明は、合成石英ガラスブ
ロックから加熱処理することなく、機械研削のみによ
り、容器形状を形成することを特徴とする石英ガラス製
容器の製造方法であることを要旨としている。The gist of the invention of claim 2 of the present application is to provide a method for manufacturing a quartz glass container characterized by forming a container shape only by mechanical grinding without heat treatment from a synthetic quartz glass block. I have.
【００１７】本願請求項３の発明では、上記合成石英ガ
ラスブロックは、ＶＡＤ法により製造されることを特徴
とする請求項２に記載の石英ガラス製容器の製造方法で
あることを要旨としている。According to a third aspect of the present invention, there is provided a method for manufacturing a quartz glass container according to the second aspect, wherein the synthetic quartz glass block is manufactured by a VAD method.
【００１８】[0018]
【発明の実施の形態】以下、本発明に係わる石英ガラス
製容器およびその製造方法を図面に基づき説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A quartz glass container and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.
【００１９】図１は本発明に係わる石英ガラス製容器、
例えば理化学用容器のビーカ１で、このビーカ１はＶＡ
Ｄ法により製造された合成石英ガラス製であり、一般に
用いられている形状を有している。FIG. 1 shows a quartz glass container according to the present invention.
For example, beaker 1 of a physics and chemistry container, and this beaker VA
It is made of synthetic quartz glass manufactured by the method D, and has a generally used shape.
【００２０】理化学用容器として、ビーカ１の他に例え
ば、シャーレー、結晶皿、蒸発皿等が考えられる。As the physical and chemical containers, besides the beaker 1, for example, a petri dish, a crystal dish, an evaporating dish and the like can be considered.
【００２１】ビーカ１は、例えば図２に示すような工程
により製造される。The beaker 1 is manufactured, for example, by a process as shown in FIG.
【００２２】例えば、合成石英ガラスインゴットを製造
する工程と、合成石英ガラスインゴットを切断し母材と
なる合成石英ガラスブロックを製造する工程と、合成石
英ガラスブロックから石英ガラス容器を機械研削する工
程を有する。For example, a process for manufacturing a synthetic quartz glass ingot, a process for cutting a synthetic quartz glass ingot to produce a synthetic quartz glass block serving as a base material, and a process for mechanically grinding a quartz glass container from the synthetic quartz glass block. Have.
【００２３】インゴットの製造は、一般に原料としてＳ
ｉＣｌ４を用い、酸水素火炎加水分解による直接堆積ガ
ラス化する直接法、高周波誘導プラズマによりガラス化
するプラズマ法、電気炉によりガラス化するスート法な
どがある。Ingot production is generally carried out using S
There are a direct method of vitrifying directly by oxyhydrogen flame hydrolysis using iCl 4 , a plasma method of vitrifying by high frequency induction plasma, a soot method of vitrifying by an electric furnace, and the like.
【００２４】このスート法にはＶＡＤ法があり、特にＶ
ＡＤ法により製造された合成石英ガラスは、最も金属汚
染量が少なく、従って、石英ガラス容器に用いる合成石
英ガラスブロックは、ＶＡＤ法により製造するのが最も
好ましい。The soot method includes a VAD method.
Synthetic quartz glass produced by the AD method has the least amount of metal contamination. Therefore, the synthetic quartz glass block used for the quartz glass container is most preferably produced by the VAD method.
【００２５】ＶＡＤ法は、図３に示すような一般的なＶ
ＡＤ法合成石英ガラス製造装置１１を用いて製造され、
このＶＡＤ法合成石英ガラス製造装置１１は、反応容器
１２と、この反応容器１２で製造され合成石英ガラス製
で棒状の出発材１３ａに堆積する多孔質ガラス体１３を
引上げる引上装置１４と、反応容器１２内に原料ガス等
を供給し、反応させ原料供給装置１５を有するトーチ１
６と、引上装置１４と原料供給装置１５を制御する成長
速度制御装置１７と、この成長速度制御装置１７に入力
する成長速度設定器１８とを有している。The VAD method uses a general VAD as shown in FIG.
Manufactured using the AD method synthetic quartz glass manufacturing apparatus 11,
The VAD synthetic quartz glass manufacturing apparatus 11 includes a reaction vessel 12, a pulling-up apparatus 14 for pulling up a porous glass body 13 produced in the reaction vessel 12, and deposited on a rod-shaped starting material 13a made of synthetic quartz glass. A torch 1 having a raw material supply device 15 by supplying a raw material gas or the like into the reaction vessel 12 to cause a reaction.
6, a growth rate control device 17 for controlling the pulling-up device 14 and the raw material supply device 15, and a growth speed setting device 18 input to the growth speed control device 17.
【００２６】このＶＡＤ法合成石英ガラス製造装置１１
を用いて、合成石英ガラスインゴットを製造するには、
出発材１３ａを反応容器１２内に挿入し、トーチ１６か
らＳｉＣｌ４、Ｈ２、Ｏ２を供給し、トーチ１６の吹出
口の前方に形成される酸水素火炎によって火炎加水分解
反応せしめＳｉＯ２のガラス微粒子を生成し、出発材１
３ａの回転軸方向の片端面に吹き付けて多孔質ガラス体
を形成した後、連続的にまたは非連続的に高温炉に挿入
させて脱泡透明ガラス化して合成石英ガラスインゴット
を得る。This VAD synthetic quartz glass manufacturing apparatus 11
To produce a synthetic quartz glass ingot using
The starting material 13a is inserted into the reaction vessel 12, and SiCl4, H2, and O2 are supplied from the torch 16, and a flame hydrolysis reaction is caused by an oxyhydrogen flame formed in front of an outlet of the torch 16 to generate SiO2 glass particles. And starting material 1
A porous glass body is formed by spraying on one end face in the rotation axis direction of 3a, and then continuously or discontinuously inserted into a high-temperature furnace to be defoamed and transparently vitrified to obtain a synthetic quartz glass ingot.
【００２７】上記のようにして製造された合成石英ガラ
スインゴットを、切断装置によって、例えば複数個の合
成石英ガラスブロックに切断する。合成石英ガラスイン
ゴットが製造される石英ガラス容器の大きさに比べて大
きい場合には、この石英ガラス容器の大きさに近い大き
さに切断されるが、合成石英ガラスインゴットが製造さ
れる石英ガラス容器の大きさにほぼ等しい場合には、合
成石英ガラスインゴットの切断は必要とせず、この合成
石英ガラスインゴットから所定の厚さｔｍｍの石英ガラ
ス用容器を直接切り出す。The synthetic quartz glass ingot manufactured as described above is cut into, for example, a plurality of synthetic quartz glass blocks by a cutting device. If the synthetic quartz glass ingot is larger than the size of the quartz glass container to be manufactured, it is cut into a size close to the size of this quartz glass container, but the quartz glass container from which the synthetic quartz glass ingot is manufactured. When the size of the synthetic quartz glass ingot is almost equal to the size of the synthetic quartz glass ingot, a quartz glass container having a predetermined thickness tmm is directly cut out from the synthetic quartz glass ingot.
【００２８】合成石英ガラスブロックの機械研削工程で
は、前工程で切断された合成石英ガラスブロックから、
研削装置により容器形状のビーカ１を切り出す。切り出
したビーカ１を必要に応じて、研磨装置によって鏡面研
磨し、洗浄装置によって洗浄する。In the mechanical grinding step of the synthetic quartz glass block, the synthetic quartz glass block cut in the previous step is
The container-shaped beaker 1 is cut out by a grinding device. The beaker 1 thus cut out is mirror-polished as required by a polishing device and washed by a cleaning device.
【００２９】上記洗浄として、フッ化水素酸によって、
ビーカ１の表面を５〜１５μｍエッチング処理すること
がより好ましく、これにより、より確実な洗浄が可能と
なるからである。In the above-mentioned washing, hydrofluoric acid is used.
This is because the surface of the beaker 1 is more preferably subjected to an etching treatment of 5 to 15 μm, whereby more reliable cleaning can be performed.
【００３０】このようにして製造された石英ガラス製容
器であるビーカ１は、表面から２０μｍの厚さ領域およ
び１／２ｔの±１０μｍの厚さ領域いずれにおいても、
Ｎａ、Ｍｇ、Ａｌ、Ｋ、Ｃａ、Ｃｒ、Ｆｅ、Ｎｉ、Ｃｕ
およびＺｎ濃度がいずれも０．１ｐｐｂ未満に形成され
る。The beaker 1, which is a quartz glass container manufactured as described above, has a thickness of 20 μm from the surface and a thickness of ± 10 μm of ｔt.
Na, Mg, Al, K, Ca, Cr, Fe, Ni, Cu
And the Zn concentration are both less than 0.1 ppb.
【００３１】これによって、例えば容器内に薬液を入れ
た使用中に有害となる程度に金属不純物が溶け出すこと
がなく、また、高温環境下で金属不純物が拡散ないし理
化学用容器あるいは半導体製造用容器を提供することが
できる。By this means, for example, metal impurities do not dissolve to the extent that they become harmful during use in which a chemical solution is placed in a container, and metal impurities do not diffuse or physicochemical containers or semiconductor manufacturing containers under a high temperature environment. Can be provided.
【００３２】つまり、上記２つの領域における上記特定
を行った石英ガラス製容器によれば、極めて高感度な分
析評価が可能となり、また、極めて高純度な半導体を製
造することができる。That is, according to the quartz glass container specified above in the two regions, extremely sensitive analysis and evaluation can be performed, and a semiconductor with extremely high purity can be manufactured.
【００３３】また、上述の通り合成石英ガラスブロック
から加熱処理することなく、機械研削のみにより容器形
状を形成する製造方法によれば、より確実に金属不純物
が溶け出すことがなく、また、高温環境下で金属不純物
が拡散ない石英ガラス製容器を製造することができる。According to the manufacturing method of forming a container shape only by mechanical grinding without heat treatment from a synthetic quartz glass block as described above, metal impurities are not more reliably melted out, It is possible to manufacture a quartz glass container in which metal impurities do not diffuse below.
【００３４】図４は本発明に係わる石英ガラス製容器、
例えば半導体製造工程の洗浄に用いられる半導体用容器
２で、この半導体用容器２はＶＡＤ法により製造された
合成石英ガラス製であり、一般に用いられている形状を
有している。FIG. 4 shows a quartz glass container according to the present invention.
For example, a semiconductor container 2 used for cleaning in a semiconductor manufacturing process. The semiconductor container 2 is made of synthetic quartz glass manufactured by a VAD method, and has a generally used shape.
【００３５】この半導体用容器２も、図２に示すような
製造工程により、合成石英ガラスブロックから切り出し
て製造される。この半導体用容器２も、任意の厚さ：ｔ
を有する石英ガラス容器であって、表面から２０μｍの
厚さ領域および１／２ｔの±１０μｍの厚さ領域いずれ
においても、Ｎａ、Ｍｇ、Ａｌ、Ｋ、Ｃａ、Ｃｒ、Ｆ
ｅ、Ｎｉ、ＣｕおよびＺｎ濃度がいずれも０．１ｐｐｂ
未満であるので、金属汚染がなく、合成石英ガラスブロ
ックとほぼ同等の純度に保つことができる。This semiconductor container 2 is also manufactured by cutting out from a synthetic quartz glass block by the manufacturing process shown in FIG. This semiconductor container 2 also has an arbitrary thickness: t
A quartz glass container having Na, Mg, Al, K, Ca, Cr, F in both a thickness region of 20 μm from the surface and a thickness region of ± 10 μm of ｔt.
e, Ni, Cu and Zn concentrations are all 0.1 ppb
Since it is less than the above, there is no metal contamination, and the purity can be kept substantially equal to that of the synthetic quartz glass block.
【００３６】[0036]
【実施例】図５に示すような寸法のビーカをＶＡＤ法に
より製造した石英ガラスインゴットから機械研削加工に
より製作した（実施例）。EXAMPLE A beaker having the dimensions shown in FIG. 5 was manufactured by mechanical grinding from a quartz glass ingot manufactured by the VAD method (Example).
【００３７】また、実施例と同様の寸法を有し、下記の
ように作製された従来例についても、同様の試験を行っ
た。従来例の製造方法は、ＶＡＤ法合成石英ガラスイン
ゴット→製管（シリンダフォーミング、パイプチュービ
ング）→酸水素火炎加工（火炎旋盤→研削→火炎加工ア
ニール）の工程で行われる。A similar test was also performed on a conventional example having the same dimensions as the example and manufactured as described below. The production method of the conventional example is performed in the steps of VAD synthetic quartz glass ingot → pipe making (cylinder forming, pipe tubing) → oxyhydrogen flame processing (flame lathe → grinding → flame processing annealing).
【００３８】試験１：上記のようにして製作したビーカ
（実施例）をフッ化水素酸によりエッチングを行い、ビ
ーカの各層に含まれる金属不純物をＩＰＣーＭＳ（誘導
結合プラズマ質量分析装置）を用いて分析し、実施例に
ついて表１の結果を得、従来例については、表２のよう
な結果を得た。Test 1: The beaker (Example) manufactured as described above was etched with hydrofluoric acid, and the metal impurities contained in each layer of the beaker were analyzed using an IPC-MS (inductively coupled plasma mass spectrometer). The results of Table 1 were obtained for the examples, and the results of Table 2 were obtained for the conventional example.
【００３９】[0039]
【表１】 [Table 1]
【００４０】[0040]
【表２】 [Table 2]
【００４１】[0041]
【発明の効果】本発明に係わる石英ガラス製容器および
その製造方法によれば、使用中に金属不純物が溶け出さ
ないもしくは高温環境下で金属不純物が拡散しない石英
ガラス製容器およびその製造方法を提供することができ
る。According to the quartz glass container and the method of manufacturing the same according to the present invention, there is provided a quartz glass container which does not dissolve metal impurities during use or does not diffuse metal impurities in a high temperature environment, and a method of manufacturing the same. can do.
【００４２】即ち、石英ガラス製容器は任意の厚さ：ｔ
を有する石英ガラス容器であって、表面から２０μｍの
厚さ領域および１／２ｔの±１０μｍの厚さ領域いずれ
においても、Ｎａ、Ｍｇ、Ａｌ、Ｋ、Ｃａ、Ｃｒ、Ｆ
ｅ、Ｎｉ、ＣｕおよびＺｎ濃度がいずれも０．１ｐｐｂ
未満であるので、容器内に薬液を入れて使用しても、使
用中に有害となる程度に金属不純物が溶け出すことがな
く、また、高温環境下で金属不純物が拡散せず、極めて
高感度な分析評価が可能となり、また、極めて高純度な
半導体を製造することができる。That is, the quartz glass container has an arbitrary thickness: t
A quartz glass container having Na, Mg, Al, K, Ca, Cr, F in both a thickness region of 20 μm from the surface and a thickness region of ± 10 μm of ｔt.
e, Ni, Cu and Zn concentrations are all 0.1 ppb
Less than that, even if a chemical solution is used in a container, the metal impurities do not dissolve to the extent that they are harmful during use, and the metal impurities do not diffuse in high-temperature environments. Analysis and evaluation can be performed, and an extremely high-purity semiconductor can be manufactured.
【００４３】また、合成石英ガラスブロックから加熱処
理することなく、機械研削のみにより、容器形状を形成
するので、より確実に金属不純物が溶け出すことがな
く、また、高温環境下で金属不純物が拡散ない石英ガラ
ス製容器を製造することができる。Further, since the container shape is formed only by mechanical grinding without heat treatment from the synthetic quartz glass block, the metal impurities do not melt out more reliably, and the metal impurities diffuse under a high temperature environment. No quartz glass containers can be manufactured.
【００４４】また、合成石英ガラスブロックは、ＶＡＤ
法により製造されるので、ＶＡＤ法により製造された合
成石英ガラスとほぼ同等の純度を有する石英ガラス製容
器を製造することができる。The synthetic quartz glass block is made of VAD
Since it is manufactured by the method, it is possible to manufacture a quartz glass container having substantially the same purity as the synthetic quartz glass manufactured by the VAD method.
【図１】本発明に係わる石英ガラス容器の断面図。FIG. 1 is a sectional view of a quartz glass container according to the present invention.
【図２】本発明に係わる石英ガラス容器の製造方法の一
実施形態を示す製造工程図。FIG. 2 is a manufacturing process diagram showing one embodiment of a method for manufacturing a quartz glass container according to the present invention.
【図３】一般に用いられているＶＡＤ法の概念図。FIG. 3 is a conceptual diagram of a generally used VAD method.
【図４】本発明に係わる石英ガラス容器の他の実施形態
を示す斜視図。FIG. 4 is a perspective view showing another embodiment of the quartz glass container according to the present invention.
【図５】実施例の試験に用いられる石英ガラス容器の説
明図。FIG. 5 is an explanatory view of a quartz glass container used for a test of an example.
１ ビーカ ２ 半導体用容器 １１ ＶＡＤ法合成石英ガラス製造装置 １２ 反応容器 １３ａ 出発材 １３ 多孔質ガラス体 １４ 引上装置 １５ 原料供給装置 １６ トーチ １７ 成長速度制御装置 １８ 成長速度設定器 DESCRIPTION OF SYMBOLS 1 Beaker 2 Semiconductor container 11 VAD synthetic quartz glass manufacturing apparatus 12 Reaction vessel 13a Starting material 13 Porous glass body 14 Pulling device 15 Raw material supply device 16 Torch 17 Growth rate control device 18 Growth rate setting device
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/68 Ｈ０１Ｌ 21/306 Ｊ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/68 H01L 21/306 J
Claims (3)
であって、表面から２０μｍの厚さ領域および１／２ｔ
の±１０μｍの厚さ領域いずれにおいても、Ｎａ、Ｍ
ｇ、Ａｌ、Ｋ、Ｃａ、Ｃｒ、Ｆｅ、Ｎｉ、ＣｕおよびＺ
ｎ濃度がいずれも０．１ｐｐｂ未満であることを特徴と
する石英ガラス製容器。1. A quartz glass container having an arbitrary thickness: t, a region having a thickness of 20 μm from the surface and １ ／ t.
Na, M in any thickness region of ± 10 μm
g, Al, K, Ca, Cr, Fe, Ni, Cu and Z
A container made of quartz glass, wherein each of the n concentrations is less than 0.1 ppb.
ことなく、機械研削のみにより、容器形状を形成するこ
とを特徴とする石英ガラス製容器の製造方法。2. A method for manufacturing a quartz glass container, comprising forming a container shape only by mechanical grinding without heat treatment from a synthetic quartz glass block.
により製造されることを特徴とする請求項２に記載の石
英ガラス製容器の製造方法。3. The method for manufacturing a quartz glass container according to claim 2, wherein said synthetic quartz glass block is manufactured by a VAD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27881299A JP2001097734A (en) | 1999-09-30 | 1999-09-30 | Quartz glass container and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27881299A JP2001097734A (en) | 1999-09-30 | 1999-09-30 | Quartz glass container and method for producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001097734A true JP2001097734A (en) | 2001-04-10 |
Family
ID=17602517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27881299A Pending JP2001097734A (en) | 1999-09-30 | 1999-09-30 | Quartz glass container and method for producing the same |
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| Country | Link |
|---|---|
| JP (1) | JP2001097734A (en) |
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