JP2001077430A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JP2001077430A JP2001077430A JP24903099A JP24903099A JP2001077430A JP 2001077430 A JP2001077430 A JP 2001077430A JP 24903099 A JP24903099 A JP 24903099A JP 24903099 A JP24903099 A JP 24903099A JP 2001077430 A JP2001077430 A JP 2001077430A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- light
- transparent glass
- diode element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Die Bonding (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表面実装型の発光
ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-mounted light emitting diode.
【０００２】[0002]
【従来の技術】従来、この種の発光ダイオードとして
は、例えば図６に示したものが知られている。この発光
ダイオード１は、ガラスエポキシ基板（以下、ガラエポ
基板という）２の上面に一対の上面電極（カソード電極
３とアノード電極４）をパターン形成し、カソード電極
３の上に導電性接着剤５によって発光ダイオード素子６
を固着すると共に、発光ダイオード素子６の上面電極と
アノード電極４とをボンディングワイヤ７で接続し、こ
のボンディングワイヤ７及び発光ダイオード素子６を樹
脂封止体８によって封止した構造のものである。使用時
にはマザーボード１１の上面に前記発光ダイオード１を
載置し、上面電極と一体に成形された下面電極９，１０
をマザーボード１１上のプリント配線１２，１３に半田
１４で固定することによって表面実装が実現するもので
ある。2. Description of the Related Art Conventionally, as this kind of light emitting diode, for example, the one shown in FIG. 6 is known. In this light emitting diode 1, a pair of upper electrodes (cathode electrode 3 and anode electrode 4) are pattern-formed on the upper surface of a glass epoxy substrate (hereinafter, referred to as a glass epoxy substrate) 2, and a conductive adhesive 5 is formed on the cathode electrode 3. Light emitting diode element 6
And the upper electrode of the light emitting diode element 6 and the anode electrode 4 are connected by a bonding wire 7, and the bonding wire 7 and the light emitting diode element 6 are sealed by a resin sealing body 8. In use, the light emitting diode 1 is mounted on the upper surface of the motherboard 11, and the lower electrodes 9, 10 formed integrally with the upper electrode.
Is fixed to the printed wirings 12 and 13 on the motherboard 11 with solder 14 to realize surface mounting.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の発光ダイオード１にあっては、マザーボード１１に
発光ダイオード１を上向きに実装し、樹脂封止体８を通
して発光させていたために、紫外線による樹脂封止体８
の劣化などによって長期間の使用では発光輝度が低下す
るなどの問題があった。However, in the above-mentioned conventional light emitting diode 1, the light emitting diode 1 is mounted on the motherboard 11 upward and light is emitted through the resin sealing body 8, so that the resin sealing by ultraviolet rays is performed. Stop 8
For example, there is a problem in that the light emission luminance is reduced over a long period of use due to deterioration of the device.
【０００４】そこで、本発明の目的は、長期間に亘って
使用し続けた場合であっても、発光輝度の低下を生じさ
せない信頼性の高い発光ダイオードを提供することであ
る。Accordingly, an object of the present invention is to provide a highly reliable light emitting diode which does not cause a decrease in light emission luminance even when used for a long period of time.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明者は、透明ガラスを通して発光させることで
長期間の使用でも発光輝度の低下を来たさないようにし
た。具体的には、請求項１の発明は、基板の上面に発光
ダイオード素子を載せて固着し、この発光ダイオード素
子の電極と外部接続用電極とを接続すると共に、発光ダ
イオード素子を樹脂封止体によって封止してなる発光ダ
イオードにおいて、前記基板を透明ガラスで形成し、こ
の透明ガラス基板の上面に素子基板が透明である発光ダ
イオード素子を透明接着剤によって固着すると共に、発
光ダイオード素子の上面側に非透光部を設け、発光ダイ
オード素子から出た光を透明ガラス基板側から発光する
ようにしたことを特徴とする発光ダイオードによって、
上述した課題を解決した。In order to solve the above-mentioned problems, the present inventor has made it possible to prevent light emission luminance from being lowered even by long-term use by emitting light through transparent glass. Specifically, according to the first aspect of the present invention, a light emitting diode element is placed and fixed on an upper surface of a substrate, an electrode of the light emitting diode element is connected to an electrode for external connection, and the light emitting diode element is sealed with a resin sealing body. In the light emitting diode sealed by the above method, the substrate is formed of transparent glass, and the light emitting diode element whose element substrate is transparent is fixed to the upper surface of the transparent glass substrate with a transparent adhesive, and the upper surface side of the light emitting diode element A light-emitting diode, characterized in that a non-light-transmitting portion is provided, and light emitted from the light-emitting diode element is emitted from the transparent glass substrate side.
The above-mentioned problem has been solved.
【０００６】この発明によれば、発光ダイオード素子か
ら出た光を紫外線で劣化しにくい透明ガラス基板側から
発光させるようにしたので、長期間使用しても高輝度発
光が得られることになる。According to the present invention, the light emitted from the light emitting diode element is emitted from the transparent glass substrate which is hardly deteriorated by ultraviolet rays, so that high-luminance light can be obtained even when used for a long time.
【０００７】請求項２の発明は、請求項１に記載の発光
ダイオードにおいて、前記透明接着剤の中にはイットリ
ウム化合物からなる蛍光材が分散していることを特徴と
する。According to a second aspect of the present invention, in the light emitting diode according to the first aspect, a fluorescent material comprising an yttrium compound is dispersed in the transparent adhesive.
【０００８】この発明によれば、波長変換物質を透明接
着剤の中に分散させることで、波長変換型の発光ダイオ
ードにも適用でき、その場合でも透明ガラス基板側から
発光させることで高輝度発光が長期に亘って得られる。According to the present invention, by dispersing the wavelength converting substance in the transparent adhesive, the present invention can be applied to a wavelength converting type light emitting diode. Is obtained over a long period of time.
【０００９】請求項３の発明は、請求項１に記載の発光
ダイオードにおいて、発光ダイオード素子が素子基板と
してサファイヤガラスを用いた窒化ガリウム系化合物半
導体からなることを特徴とする。According to a third aspect of the present invention, in the light emitting diode according to the first aspect, the light emitting diode element is made of a gallium nitride compound semiconductor using sapphire glass as an element substrate.
【００１０】この発明によれば、透明のサファイヤガラ
スを用いたことで発光ダイオード素子の裏面側からの発
光が可能となり、この発光ダイオード素子を搭載した透
明ガラス基板の裏面側への発光を可能とした。According to the present invention, by using transparent sapphire glass, light can be emitted from the back side of the light emitting diode element, and light can be emitted to the back side of the transparent glass substrate on which the light emitting diode element is mounted. did.
【００１１】請求項４の発明は、請求項１に記載の発光
ダイオードにおいて、前記透明ガラス基板が、下面側に
集光レンズ部を一体に設けていることを特徴とする。According to a fourth aspect of the present invention, in the light emitting diode according to the first aspect, the transparent glass substrate is provided with a condenser lens unit integrally on a lower surface side.
【００１２】この発明によれば、透明ガラス基板の裏面
側に透過した発光をさらに集光することで発光輝度が一
段と上がる。According to the present invention, the light emission transmitted through the back surface of the transparent glass substrate is further condensed, thereby further increasing the light emission luminance.
【００１３】請求項５の発明は、請求項１に記載の発光
ダイオードにおいて、前記外部接続用電極が樹脂封止体
の外周面に形成されていることを特徴とする。According to a fifth aspect of the present invention, in the light emitting diode according to the first aspect, the external connection electrode is formed on an outer peripheral surface of a resin sealing body.
【００１４】この発明によれば、前記発光ダイオードを
上下逆にしてマザーボード上に実装する際、前記外部接
続用電極をマザーボード上のプリント配線に半田付けす
ることで発光ダイオード素子への通電が可能となり、実
装作業が極めて簡易である。According to the present invention, when the light emitting diode is mounted upside down on the motherboard, the external connection electrode is soldered to a printed wiring on the motherboard, so that the light emitting diode element can be energized. In addition, the mounting operation is extremely simple.
【００１５】[0015]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る発光ダイオードの実施形態を詳細に説明する。図
１及び図２は、表面実装型発光ダイオードの第1実施形
態を示したものである。この実施形態に係る表面実装型
の発光ダイオード２１は、四角形状の透明ガラス基板２
２と、その左右両側に設けられる一対の外部接続用電極
２３，２４が形成された枠体３６と、透明ガラス基板２
２の上面中央部に搭載された発光ダイオード素子２５と
を備える。透明ガラス基板２２は、一般的な無色透明な
ガラスが使用される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show a first embodiment of a surface-mounted light emitting diode. The surface-mounted light emitting diode 21 according to this embodiment has a rectangular transparent glass substrate 2.
2, a frame body 36 provided with a pair of external connection electrodes 23 and 24 provided on both left and right sides thereof, and a transparent glass substrate 2
2 and a light-emitting diode element 25 mounted at the center of the upper surface. As the transparent glass substrate 22, general colorless and transparent glass is used.
【００１６】発光ダイオード素子２５は窒化ガリウム系
化合物半導体からなる青色発光素子であり、透明ガラス
で構成されるサファイヤ基板２６の上面にｎ型半導体２
７とｐ型半導体２８を成長させた構造のものである。ｎ
型半導体２７及びｐ型半導体２８は、それぞれの上面に
電極を備えるが、この実施形態では非透光性の遮光電極
２９，３０がｎ型半導体２７及びｐ型半導体２８の各上
面全体に形成されている。そのため、発光ダイオード素
子２５の青色発光は、遮光電極２９，３０によって上方
側への発光が略完全に遮られ、その大部分が透明のサフ
ァイヤ基板２６を透過して下方側に向かって発光する。The light-emitting diode element 25 is a blue light-emitting element made of a gallium nitride-based compound semiconductor, and has an n-type semiconductor 2 on an upper surface of a sapphire substrate 26 made of transparent glass.
7 and a structure in which a p-type semiconductor 28 is grown. n
The type semiconductor 27 and the p-type semiconductor 28 have electrodes on their respective upper surfaces. In this embodiment, non-light-transmitting light-shielding electrodes 29 and 30 are formed on the entire upper surfaces of the n-type semiconductor 27 and the p-type semiconductor 28, respectively. ing. Therefore, the blue light emitted from the light-emitting diode element 25 is almost completely blocked from being emitted upward by the light-shielding electrodes 29 and 30, and most of the light is emitted downward through the transparent sapphire substrate 26.
【００１７】前記発光ダイオード素子２５は、透明ガラ
ス基板２２の上面に厚く塗布された透明接着剤３１によ
って固着されている。この透明接着剤３１の中にはイッ
トリウム化合物等からなる蛍光材３２が分散されてお
り、発光ダイオード２１からの青色発光を可視光の長波
長に変換することができる。The light emitting diode element 25 is fixed to the upper surface of the transparent glass substrate 22 by a transparent adhesive 31 applied thickly. A fluorescent material 32 made of an yttrium compound or the like is dispersed in the transparent adhesive 31 and can convert blue light emitted from the light emitting diode 21 into long wavelength visible light.
【００１８】外部接続用電極２３，２４は、透明ガラス
基板２２の上部外周を四角に囲うプラスッチクの枠体３
６に形成されている。枠体３６は、透明ガラス基板２２
とは別工程で作られ、発光ダイオード素子２５が搭載さ
れた基板上面に接着剤などによって固定される。外部接
続用電極２３，２４は、枠体３６の成形時に蒸着などに
よってパターン形成され、前記発光ダイオード素子２５
の各遮光電極２９，３０とボンディングワイヤ３３，３
４によって接続されるカソード電極２３ａ及びアノード
電極２４ａと、マザーボード接続用電極２３ｂ，２４ｂ
とを有する。カソード電極２３ａ及びアノード電極２４
ａは、枠体３６の一対の内側底面部３６ａに所定幅で設
けられ、マザーボード接続用電極２３ｂ，２４ｂは、そ
れと同カ側の縦壁３６ｂの外周面全体に設けられ、両者
はプリント電極２３ｃ、２４ｃによって接続されてい
る。The external connection electrodes 23 and 24 are formed of a plastic frame 3 surrounding the upper outer periphery of the transparent glass substrate 22 in a square.
6 is formed. The frame 36 is made of the transparent glass substrate 22.
And is fixed by an adhesive or the like to the upper surface of the substrate on which the light emitting diode elements 25 are mounted. The external connection electrodes 23 and 24 are patterned and formed by vapor deposition or the like at the time of forming the frame 36, and the light emitting diode elements 25 are formed.
Of the light shielding electrodes 29, 30 and the bonding wires 33, 3
4, a cathode electrode 23a and an anode electrode 24a, and motherboard connection electrodes 23b and 24b.
And Cathode electrode 23a and anode electrode 24
a is provided with a predetermined width on a pair of inner bottom surfaces 36a of the frame 36, and the motherboard connection electrodes 23b and 24b are provided on the entire outer peripheral surface of the vertical wall 36b on the same side as the motherboard connection electrodes 23b and 24b. , 24c.
【００１９】上記枠体３６の内部は樹脂封止体３５によ
って略全体が充填される。この充填によって、透明ガラ
ス基板２２の上面に搭載された発光ダイオード素子２５
及びボンディングワイヤ３３，３４が封止される。樹脂
封止体３５は、無色透明である必要はない。The inside of the frame 36 is almost entirely filled with a resin sealing body 35. By this filling, the light emitting diode element 25 mounted on the upper surface of the transparent glass substrate 22 is formed.
Then, the bonding wires 33 and 34 are sealed. The resin sealing body 35 does not need to be colorless and transparent.
【００２０】上述のような構成からなる発光ダイオード
２１にあっては、発光ダイオード素子２５のｎ型半導体
２７とｐ型半導体２８との境界面から上下方向に青色光
が発光するが、上方向へ発光した青色光は発光ダイオー
ド素子２５の上面全体に設けられた遮光電極２９，３０
によって遮られるために、樹脂封止体３５内への透過が
殆どない状態で遮光電極２９，３０からの反射を受け
る。これらの反射光及び最初からサファイヤ基板２６を
透過して下方側に向かう青色発光は、蛍光材３２が分散
している透明接着剤３１を介して透明ガラス基板２２を
透過し、透明ガラス基板２２の下面側を照射する。その
際、透明接着剤３１の中に分散されている蛍光材３２が
青色発光の短波長によって励起され、青色発光は黄色味
がかった長波長の発光に変換される。そして、元々の青
色発光と波長変換された黄色発光とが互いに混色するこ
とで、透明ガラス基板２２の下面側では白色に近い発光
が得られることになる。In the light emitting diode 21 having the above-described structure, blue light is emitted vertically from the boundary between the n-type semiconductor 27 and the p-type semiconductor 28 of the light-emitting diode element 25, but is emitted upward. The emitted blue light is applied to light shielding electrodes 29 and 30 provided on the entire upper surface of the light emitting diode element 25.
As a result, the light is reflected from the light-shielding electrodes 29 and 30 with almost no transmission into the resin sealing body 35. The reflected light and the blue light emitted from the beginning and transmitted downward through the sapphire substrate 26 pass through the transparent glass substrate 22 via the transparent adhesive 31 in which the fluorescent material 32 is dispersed, and The lower surface is irradiated. At that time, the fluorescent material 32 dispersed in the transparent adhesive 31 is excited by the short wavelength of blue light emission, and the blue light emission is converted into yellowish long wavelength light emission. Then, by mixing the original blue light emission and the wavelength-converted yellow light emission with each other, light near white is obtained on the lower surface side of the transparent glass substrate 22.
【００２１】次に、上記構成からなる発光ダイオード２
１の表面実装方法を説明する。図２は、マザーボード４
１に発光ダイオード２１を表面実装した時の状態を示し
たものである。この実施形態では、前記発光ダイオード
２１を上下逆にしてマザーボード４１上に載置し、マザ
ーボード４１上のプリント配線４２，４３に枠体３６の
外周面に形成されたマザーボード接続用電極２３ｂ，２
４ｂを半田４４で固定する。マザーボード接続用電極２
３ｂ，２４ｂは外周面全体に形成されているので、取付
け位置の調整が容易であると共に、半田４４による確実
な固定が得られる。Next, the light emitting diode 2 having the above configuration
The surface mounting method 1 will be described. FIG. 2 shows the motherboard 4
1 shows a state when the light emitting diode 21 is surface-mounted. In this embodiment, the light emitting diode 21 is mounted upside down on a motherboard 41, and printed wirings 42, 43 on the motherboard 41 are connected to motherboard connection electrodes 23b, 2 formed on the outer peripheral surface of a frame 36.
4b is fixed with solder 44. Electrode for motherboard connection 2
Since 3b and 24b are formed on the entire outer peripheral surface, the adjustment of the mounting position is easy and the secure fixing by the solder 44 is obtained.
【００２２】上述の実装手段では、発光ダイオード２１
が上下逆に実装されるために、マザーボード４１の上面
側が発光ダイオード２１によって照射されることにな
る。その際、蛍光材３２が分散されている透明接着剤３
１の中で波長変換が行われ、そのまま透明ガラス基板２
２を透過していくので、信頼性に優れた高輝度の白色発
光が長期間に亘って得られることになる。In the above mounting means, the light emitting diode 21
Are mounted upside down, the upper surface of the motherboard 41 is illuminated by the light emitting diodes 21. At this time, the transparent adhesive 3 in which the fluorescent material 32 is dispersed is used.
The wavelength conversion is performed in the transparent glass substrate 2 as it is.
2, the white light with high reliability and high luminance can be obtained for a long period of time.
【００２３】図３は、本発明の第２実施形態を示したも
のである。この実施形態に係る発光ダイオード２１ａ
は、透明ガラス基板２２の下面側に半球状の集光レンズ
部４６を一体に設けた以外は前記実施形態と略同様の構
成からなるので、詳細な説明を省略する。集光レンズ部
４６も透明ガラスによって形成され、透明ガラス基板２
２の成形時に一体に形成される。このような集光レンズ
部４６を設けたことで、透明ガラス基板２２からの透過
発光が集光レンズ部４６によって内方に屈折し、集光性
が高められることになるので、白色発光の輝度アップが
図られることになる。FIG. 3 shows a second embodiment of the present invention. Light emitting diode 21a according to this embodiment
Has substantially the same configuration as that of the above-described embodiment except that a hemispherical condenser lens portion 46 is integrally provided on the lower surface side of the transparent glass substrate 22, and thus detailed description is omitted. The condenser lens portion 46 is also formed of transparent glass, and the transparent glass substrate 2
2 are formed integrally at the time of molding. By providing such a condensing lens portion 46, the transmitted light from the transparent glass substrate 22 is refracted inward by the condensing lens portion 46, and the condensing property is enhanced. Up will be achieved.
【００２４】図４は本発明の第３実施形態を示したもの
である。この実施形態に係る発光ダイオード２１ｂは、
透明ガラス基板２２に外部接続用電極３７，３８を蒸着
やエッチングによってパターン形成してある。前記実施
形態と同様、窒化ガリウム系化合物半導体からなる発光
ダイオード素子２５と外部接続用電極３７，３８とをボ
ンディングワイヤ３３，３４によって接続すると共に、
その上部を樹脂封止体３５によって封止した構造となっ
ている。樹脂封止体３５は横方向の長さが透明ガラス基
板２２より小さいものである。一方、マザーボード４１
には予め発光ダイオード２１ｂの樹脂封止体３５が入り
込む四角孔４５を開設しておき、実装時には前記発光ダ
イオード２１ｂを上下逆にしてマザーボード４１上に載
置し、前記四角孔４５内に樹脂封止体３５を嵌め入れ
る。その際、四角孔４５の周囲上面に透明ガラス基板２
２の外周縁が載置されるので、透明ガラス基板２２の外
部接続用電極３７，３８をマザーボード４１上のプリン
ト配線４２，４３に半田４４で固定し実装を完了する。FIG. 4 shows a third embodiment of the present invention. The light emitting diode 21b according to this embodiment includes:
The external connection electrodes 37 and 38 are patterned on the transparent glass substrate 22 by vapor deposition or etching. Similarly to the above embodiment, the light emitting diode element 25 made of a gallium nitride compound semiconductor is connected to the external connection electrodes 37 and 38 by bonding wires 33 and 34, and
The upper part is sealed with a resin sealing body 35. The resin sealing body 35 has a smaller horizontal length than the transparent glass substrate 22. Meanwhile, motherboard 41
In advance, a square hole 45 into which the resin sealing body 35 of the light emitting diode 21b enters is opened. When mounting, the light emitting diode 21b is placed upside down on the motherboard 41, and the resin sealing is put in the square hole 45. The stop 35 is fitted. At this time, the transparent glass substrate 2 is placed on the upper surface around the square hole 45.
Since the outer peripheral edge of the substrate 2 is placed, the external connection electrodes 37 and 38 of the transparent glass substrate 22 are fixed to the printed wirings 42 and 43 on the motherboard 41 with solder 44 to complete the mounting.
【００２５】前述の実施形態と同様、発光ダイオード２
１ｂが上下逆に実装されるために、マザーボード４１の
上面側が発光ダイオード２１ｂによって照射されること
になる。その際、蛍光材３２が分散されている透明接着
剤３１の中で波長変換が行われ、そのまま透明ガラス基
板２２を透過していくので、信頼性に優れた高輝度の白
色発光が長期間に亘って得られる。また、この実施形態
ではマザーボード４１の上面から突出するのが発光ダイ
オード２１ｂの透明ガラス基板２２だけなので、マザー
ボード４１を含めた全体の厚みを抑えることができる。As in the previous embodiment, the light emitting diode 2
Since 1b is mounted upside down, the upper surface of the motherboard 41 is illuminated by the light emitting diode 21b. At that time, the wavelength conversion is performed in the transparent adhesive 31 in which the fluorescent material 32 is dispersed, and the light is transmitted through the transparent glass substrate 22 as it is. Obtained over. In this embodiment, since only the transparent glass substrate 22 of the light emitting diode 21b protrudes from the upper surface of the motherboard 41, the entire thickness including the motherboard 41 can be suppressed.
【００２６】図５は本発明の第４実施形態を示したもの
である。この実施形態に係る発光ダイオード２１ｃは、
第１実施形態において、外部接続用電極３９，４０をＬ
字形状の金属板で形成した以外は略同様の構成からなる
ので、詳細な説明を省略する。外部接続用電極３９，４
０は、透明ガラス基板２２の上面に接着固定され、内側
底面３９ａ，４０ａが発光ダイオード素子２５の各遮光
電極２９，３０とボンディングワイヤ３３，３４によっ
て接続されると共に、外周面３９ｂ，４０ｂがマザーボ
ード４１のプリント配線４２，４３と半田４４で固定さ
れる。FIG. 5 shows a fourth embodiment of the present invention. The light emitting diode 21c according to this embodiment includes:
In the first embodiment, the external connection electrodes 39 and 40 are L
Since they have substantially the same configuration except that they are formed by a metal plate having a letter shape, detailed description is omitted. External connection electrodes 39, 4
Reference numeral 0 denotes an adhesive fixed to the upper surface of the transparent glass substrate 22, the inner bottom surfaces 39a and 40a are connected to the light shielding electrodes 29 and 30 of the light emitting diode element 25 by bonding wires 33 and 34, and the outer peripheral surfaces 39b and 40b are connected to the motherboard. The printed wirings 41 and 43 are fixed with solder 44.
【００２７】上述した全ての実施形態では、波長変換型
の発光ダイオードについて説明したが、本発明は波長変
換をしない発光ダイオードであっても、サファイヤ基板
等の透明基板を用いて下面側へ光が照射される発光ダイ
オード素子を用いた発光ダイオードにも適用できること
は勿論であり、その場合にも信頼性に優れた高輝度発光
が得られることになる。また、上記いずれの実施形態も
発光ダイオード素子と外部接続用電極とをボンディング
ワイヤによって接続した場合について説明したが、この
発明はこれに限定されるものではなく、例えば半田バン
プを用いたフリップチップ実装などの接続方法も含まれ
るものである。さらに、上記の実施形態では発光ダイオ
ード素子の上面電極を遮光した場合について説明した
が、樹脂封止体を黒色樹脂で形成するなど、発光ダイオ
ード素子の上面側を遮光できるものであれば、上記実施
形態のものに限られないのは勿論である。In all the embodiments described above, the wavelength conversion type light emitting diode is described. However, in the present invention, even if the light emitting diode does not perform wavelength conversion, light is transmitted to the lower surface side using a transparent substrate such as a sapphire substrate. It is needless to say that the present invention can be applied to a light emitting diode using a light emitting diode element to be irradiated. In this case, high-luminance light emission with excellent reliability can be obtained. In each of the above embodiments, the case where the light emitting diode element and the external connection electrode are connected by a bonding wire has been described. However, the present invention is not limited to this. For example, flip chip mounting using solder bumps Connection methods such as are also included. Furthermore, in the above embodiment, the case where the upper surface electrode of the light emitting diode element is shielded from light was described. Of course, it is not limited to the form.
【００２８】[0028]
【発明の効果】以上説明したように、本発明に係る発光
ダイオードによれば、透明ガラス基板の上面に素子基板
が透明である発光ダイオード素子を透明接着剤によって
固着すると共に、発光ダイオード素子の上面側に非透光
部を設け、発光ダイオード素子から出た光を紫外線で劣
化しにくい透明ガラス基板側から発光させるするように
したので、長期間に亘って使用し続けた場合であって
も、発光輝度の低下を生じさせることがなく、信頼性に
優れた高輝度の発光が得られることになる。As described above, according to the light emitting diode of the present invention, the light emitting diode element having a transparent element substrate is fixed to the upper surface of the transparent glass substrate with the transparent adhesive, and the upper surface of the light emitting diode element is fixed. A non-light-transmitting portion is provided on the side, so that light emitted from the light-emitting diode element is emitted from the transparent glass substrate side that is hardly deteriorated by ultraviolet rays, so that even when used for a long time, High-luminance light emission with excellent reliability can be obtained without lowering the light emission luminance.
【００２９】また、本発明によれば、波長変換型の白色
発光ダイオードの場合には勿論、波長変換させない窒化
ガリウム系の青色発光ダイオードに適用した場合にも高
輝度の発光を得ることができる。Further, according to the present invention, it is possible to obtain high-luminance light not only in the case of a wavelength-converting white light-emitting diode but also in the case of applying to a gallium nitride-based blue light-emitting diode that does not perform wavelength conversion.
【００３０】さらに、本発明によれば、前記発光ダイオ
ードを上下逆にしてマザーボード上に実装する際、発光
ダイオードの外周面に設けた外部接続用電極をマザーボ
ード上のプリント配線に半田付けすることで発光ダイオ
ード素子への通電が可能となり、実装作業が極めて簡易
である。Further, according to the present invention, when the light emitting diode is mounted upside down on a motherboard, an external connection electrode provided on an outer peripheral surface of the light emitting diode is soldered to a printed wiring on the motherboard. Electricity can be supplied to the light emitting diode element, and the mounting operation is extremely simple.
【図１】本発明に係る発光ダイオードの第１実施形態を
示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of a light emitting diode according to the present invention.
【図２】上記発光ダイオードをマザーボードに実装した
時の、上記図１におけるＡ−Ａ線に沿った断面図であ
る。FIG. 2 is a sectional view taken along the line AA in FIG. 1 when the light emitting diode is mounted on a motherboard.
【図３】本発明に係る発光ダイオードの第２実施形態を
示す図２と同様の断面図である。FIG. 3 is a sectional view similar to FIG. 2, showing a second embodiment of the light emitting diode according to the present invention.
【図４】本発明に係る発光ダイオードの第３実施形態を
示す図２と同様の断面図である。FIG. 4 is a sectional view similar to FIG. 2, showing a third embodiment of the light emitting diode according to the present invention.
【図５】本発明に係る発光ダイオードの第４実施形態を
示す図２と同様の断面図である。FIG. 5 is a sectional view similar to FIG. 2, showing a fourth embodiment of a light emitting diode according to the present invention.
【図６】従来における発光ダイオードをマザーボードに
実装した時の断面図である。FIG. 6 is a cross-sectional view when a conventional light emitting diode is mounted on a motherboard.
２１ 発光ダイオード ２２ 透明ガラス基板 ２３，２４ 外部接続用電極 ２５ 発光ダイオード素子 ２６ サファイヤガラス ２９，３０ 遮光電極 ３１ 透明接着剤 ３２ 蛍光材 ３５ 樹脂封止体 ３７，３８ 外部接続用電極 ３９，４０ 外部接続用電極 ４６ 集光レンズ部 DESCRIPTION OF SYMBOLS 21 Light emitting diode 22 Transparent glass substrate 23, 24 External connection electrode 25 Light emitting diode element 26 Sapphire glass 29, 30 Light shielding electrode 31 Transparent adhesive 32 Fluorescent material 35 Resin sealing body 37, 38 External connection electrode 39, 40 External connection Electrode 46 condenser lens
───────────────────────────────────────────────────── フロントページの続き (72)発明者 土屋 康介 山梨県富士吉田市上暮地１丁目23番１号 株式会社シチズン電子内 Ｆターム(参考） 5F041 AA09 AA44 DA01 DA12 DA43 DB06 EE24 EE25 FF01 5F047 AA13 BA21 CA08 CB05 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kosuke Tsuchiya 1-23-1 Kagurechi, Fujiyoshida City, Yamanashi Prefecture F-term (reference) 5F041 AA09 AA44 DA01 DA12 DA43 DB06 EE24 EE25 FF01 5F047 AA13 BA21 CA08 CB05
Claims (5)
て固着し、この発光ダイオード素子の電極と外部接続用
電極とを接続すると共に、発光ダイオード素子を樹脂封
止体によって封止してなる発光ダイオードにおいて、 前記基板を透明ガラスで形成し、この透明ガラス基板の
上面に素子基板が透明である発光ダイオード素子を透明
接着剤によって固着すると共に、発光ダイオード素子の
上面側に非透光部を設け、発光ダイオード素子から出た
光を透明ガラス基板側から発光するようにしたことを特
徴とする発光ダイオード。1. A light emitting device in which a light emitting diode element is placed and fixed on an upper surface of a substrate, an electrode of the light emitting diode element is connected to an external connection electrode, and the light emitting diode element is sealed with a resin sealing body. In the diode, the substrate is formed of transparent glass, and a light emitting diode element whose element substrate is transparent is fixed to the upper surface of the transparent glass substrate with a transparent adhesive, and a non-light transmitting portion is provided on the upper surface side of the light emitting diode element. A light-emitting diode, wherein light emitted from the light-emitting diode element is emitted from the transparent glass substrate side.
合物からなる蛍光材が分散していることを特徴とする請
求項１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein a fluorescent material made of an yttrium compound is dispersed in the transparent adhesive.
ファイヤガラスを用いた窒化ガリウム系化合物半導体か
らなることを特徴とする請求項１記載の発光ダイオー
ド。3. The light emitting diode according to claim 1, wherein the light emitting diode element is made of a gallium nitride compound semiconductor using sapphire glass as an element substrate.
ンズ部を一体に設けていることを特徴とする請求項１記
載の発光ダイオード。4. The light emitting diode according to claim 1, wherein said transparent glass substrate is provided with a condensing lens unit integrally on a lower surface side.
面に形成されていることを特徴とする請求項１記載の発
光ダイオード。5. The light emitting diode according to claim 1, wherein the external connection electrode is formed on an outer peripheral surface of a resin sealing body.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24903099A JP2001077430A (en) | 1999-09-02 | 1999-09-02 | Light-emitting diode |
| US09/787,873 US6396082B1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| CNB008015554A CN1196203C (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| EP00948262A EP1119058A4 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| PCT/JP2000/005038 WO2001009963A1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| KR10-2001-7003802A KR100463653B1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| CN00801556A CN1108267C (en) | 1999-07-29 | 2000-08-01 | Transport system with integrated transport carrier and directors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24903099A JP2001077430A (en) | 1999-09-02 | 1999-09-02 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001077430A true JP2001077430A (en) | 2001-03-23 |
Family
ID=17186969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24903099A Pending JP2001077430A (en) | 1999-07-29 | 1999-09-02 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001077430A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005159296A (en) * | 2003-11-06 | 2005-06-16 | Sharp Corp | Package structure of optodevice |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298084A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Sealing of light-emitting diode |
| JPH06151977A (en) * | 1992-11-11 | 1994-05-31 | Sharp Corp | Optical semiconductor device |
| JPH10151794A (en) * | 1996-11-22 | 1998-06-09 | Nichia Chem Ind Ltd | Light emitting device and method for molding it |
-
1999
- 1999-09-02 JP JP24903099A patent/JP2001077430A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298084A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Sealing of light-emitting diode |
| JPH06151977A (en) * | 1992-11-11 | 1994-05-31 | Sharp Corp | Optical semiconductor device |
| JPH10151794A (en) * | 1996-11-22 | 1998-06-09 | Nichia Chem Ind Ltd | Light emitting device and method for molding it |
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| JP2004172578A (en) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| JP2005159296A (en) * | 2003-11-06 | 2005-06-16 | Sharp Corp | Package structure of optodevice |
| JP2007066939A (en) * | 2005-08-29 | 2007-03-15 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
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| US8878195B2 (en) | 2007-09-28 | 2014-11-04 | Osram Opto Semiconductors Gmbh | Semiconductor based component, receptacle for a semiconductor based component, and method for producing a semiconductor based component |
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| JP2012156180A (en) * | 2011-01-24 | 2012-08-16 | Stanley Electric Co Ltd | Light-emitting device and manufacturing method thereof |
| JP2013038187A (en) * | 2011-08-05 | 2013-02-21 | Stanley Electric Co Ltd | Light-emitting device and method of manufacturing the same |
| EP2620989A3 (en) * | 2012-01-26 | 2015-08-05 | Stanley Electric Co., Ltd. | Semiconductor light-emitting device and manufacturing method |
| US9224925B2 (en) | 2012-01-26 | 2015-12-29 | Stanley Electric Co., Ltd. | Semiconductor light-emitting device and manufacturing method |
| JP2013211462A (en) * | 2012-03-30 | 2013-10-10 | Furukawa Electric Co Ltd:The | Encapsulation resin film for light-emitting diode and light-emitting diode package |
| CN113437054A (en) * | 2014-06-18 | 2021-09-24 | 艾克斯展示公司技术有限公司 | Micro-assembly LED display |
| JP2015099940A (en) * | 2015-02-23 | 2015-05-28 | 日亜化学工業株式会社 | Light-emitting device |
| JP2019175892A (en) * | 2018-03-26 | 2019-10-10 | 日亜化学工業株式会社 | Light-emitting module and manufacturing method therefor |
| JP7032645B2 (en) | 2018-03-26 | 2022-03-09 | 日亜化学工業株式会社 | Light emitting module and its manufacturing method |
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