JP2001073146A - Thin film deposition system and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To deposit a thin oxide film having uniform quality on a substrate large in area, to suppress the generation of particles and to improve the yield by generating the uniform flow of a gaseous starting material on the space between electrodes generating plasma discharge. SOLUTION: This 1st thin film deposition system 1, in which plasma discharge is generated on the space between a 1st electrode 2 and a 2nd electrode 22 arranged in a counter state in a reaction chamber 11 to deposit a thin film, is provided with a nozzle 12 provided with a blow-off port in the reaction chamber 11 for blowing off a gaseous starting material for depositing a thin film in the direction almost parallel to the counter 1st electrode 21 face and 2nd electrode 22 face, and an exhaust port 23 formed on the almost center part of the 1st electrode 21 or 2nd electrode 22 for exhausting the gas in the reaction chamber 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing apparatus, and more particularly, to a thin film manufacturing apparatus and a thin film manufacturing method for forming an oxide film by metal organic chemical vapor deposition utilizing the effect of plasma.

[0002]

2. Description of the Related Art Conventionally, in a plasma CVD apparatus in which a thin film is formed on a substrate by using RF plasma discharge, since the source gas is generally a gas at room temperature, the source gas is supplied from one of the opposite electrodes where discharge plasma is generated. A method is known in which a thin film is formed on a substrate provided on an electrode by ejecting the gas to decompose it between upper and lower electrodes.

In recent years, attention has been paid to capacitor materials for large-capacity DRAMs and ferroelectric memories (Ba, Sr).
TiO ₃ , Pb (Zr, Ti) O ₃ , SrBi ₂ (T
a, Nb) ₂ O _{9 and} other organic metal which is a CVD raw material is liquid or solid at room temperature. Therefore, it is difficult to control the composition stably with a CVD apparatus in which the raw material is introduced into a reaction chamber together with a carrier gas. there were. Therefore, metal organic chemical vapor deposition (hereinafter referred to as MOCVD), which combines a reaction gas supply system that dissolves an organic metal in a solvent and gasifies a liquid raw material instantaneously with a vaporizer and a film forming chamber (hereinafter referred to as MOCVD, is called MCVD).
etal Organic Chemical Vapor Deposition) equipment is used.

One example will be described with reference to a schematic sectional view shown in FIG. As shown in FIG.
Reference numeral 01 denotes a state where the upper electrode 212 and the lower electrode 213 face each other inside the reaction chamber 211. A gas supply system (not shown) for supplying a source gas (indicated by an arrow) vaporized by a vaporizer is connected to an upper portion of the upper electrode 212, and the upper electrode 212 is formed in a shower nozzle shape. . A raw material gas introduced from a gas supply system is supplied between the upper electrode 212 and the lower electrode 213 by the shower nozzle. Also,
A high frequency power supply 214 is connected to the upper electrode 212. Further, a shield plate 215 is provided so as to surround the side circumference and the upper side (the side opposite to the lower electrode 213) of the upper electrode 212.

On the other hand, a mounting portion (not shown) on which the substrate 301 on which a film is to be formed is mounted is formed on the lower electrode 213. A heater 216 for heating the substrate 301 mounted on the lower electrode 213 is provided inside the lower electrode 213. Further, a gas exhaust unit 217 for exhausting the source gas supplied between the electrodes is provided on a side wall of the reaction chamber 211.

[0006] MOCVD apparatus 201 as described above
Then, discharge plasma is generated between the upper and lower electrodes 212 and 213, the source gas supplied thereto is decomposed by the discharge plasma, and the decomposed product is deposited on the substrate 301 provided on the lower electrode 213. This forms a thin film.

[0007]

However, even if a gas supply device equipped with a vaporizer is used, the method of blowing out the raw material gas from the center of the electrode and exhausting the raw material gas from the side wall of the reaction chamber can provide a uniform gas flow. It was difficult to produce, and it was difficult to uniformly produce an oxide thin film over a large area. Also, even if the exhaust gas is exhausted in a symmetrical direction, for example,
Alternatively, it is difficult to produce a uniform gas flow even if the gas is exhausted in a vertically symmetrical direction.

Further, the gas produced by the solution vaporization method easily adheres to the inner surfaces of the gas pipe, the mixer, and the shower nozzle, and causes the generation of particles. Therefore, it is necessary to precisely maintain the piping path for introducing the raw material gas at a uniform temperature. Therefore, the structure for controlling the connection between the gas pipe and the electrode to a constant temperature has been complicated.

In the method in which the upper electrode is also used as a shower nozzle for blowing out gas, the surface of the shower nozzle is heated by the energy of plasma discharge. Therefore, only a specific easily decomposable organic metal is decomposed and trapped on the shower nozzle surface, so that there is a problem that the composition of the deposited film fluctuates. As a result, it has been difficult to precisely control the film composition. In addition, there is a problem that the particles fall directly on the substrate provided on the lower electrode, which causes a reduction in yield.

[0010]

SUMMARY OF THE INVENTION The present invention provides a thin film manufacturing apparatus and a thin film manufacturing method for solving the above-mentioned problems.

That is, the thin film manufacturing apparatus is configured to generate a plasma discharge between a first electrode and a second electrode arranged in a reaction chamber so as to face each other to form a thin film. A nozzle having a discharge port in a chamber and discharging a source gas for forming a thin film in a direction substantially parallel to the opposed first electrode surface and the second electrode surface; And an exhaust port through which gas in the reaction chamber is exhausted, which is formed substantially at the center of the electrode or at the center of the second electrode.

Further, a shower nozzle having a plurality of gas ejection holes is formed on an electrode of the first electrode and the second electrode opposite to an electrode on which a substrate is provided. Further, a heater is provided inside an electrode of the first electrode and the second electrode on which a substrate is installed. Further, a cooler is provided inside the electrode facing the electrode provided with the heater.

In the above-mentioned thin film manufacturing apparatus, there is provided a nozzle for jetting a source gas for forming a thin film in a direction substantially parallel to the first electrode surface and the second electrode surface, and the first electrode An exhaust port for exhausting the gas in the reaction chamber is provided at a substantially central portion of the first electrode or at a substantially central portion of the second electrode, so that the raw material gas supplied from the nozzle into the reaction chamber is supplied to the first and second electrode surfaces. Flows almost in parallel with the air, and is discharged from the exhaust port. Therefore, a uniform flow of the source gas is created between the first and second electrodes.

In the above-mentioned thin film manufacturing apparatus, even when particles are generated on the nozzle surface when the source gas produced by the solution vaporization method is supplied, the particles flow together with the source gas and are exhausted from the exhaust port. Therefore, it does not fall on the substrate surface. As a result, cleanliness is ensured during film formation.

According to the thin film manufacturing apparatus having the shower nozzle on the electrode opposite to the electrode on which the substrate is mounted, the gas is blown out from the shower nozzle 27 so that the reaction products are prevented from adhering to the electrode surface. You. Therefore, it is possible to prevent particles from falling from the electrode surface onto the substrate.

Further, in a thin film manufacturing apparatus provided with a cooler on the electrode facing the electrode on which the substrate is mounted, the electrode is cooled by the cooler, so that the surface of the electrode facing the substrate is heated by the energy of the plasma discharge. Is suppressed. Therefore, only a specific easily decomposable organic metal does not decompose on the electrode surface, so that the composition of the deposited film does not change, and a film having a desired composition can be formed. Also,
Since particles hardly adhere to the surface of the electrode provided with the cooler, the particles do not fall directly on the substrate.

The thin film manufacturing method according to the first aspect of the present invention includes the steps of: generating a plasma discharge between a first electrode and a second electrode arranged in a reaction chamber so as to face each other to form a thin film; A source gas for forming the thin film is supplied from a side between the first electrode and the second electrode in a direction substantially parallel to the first electrode surface and the second electrode surface. And exhausting the source gas from a substantially central portion of the first electrode or a substantially central portion of the second electrode.

In the above-mentioned thin film manufacturing method, a source gas is blown from a side between the first and second electrodes in a direction substantially parallel to the first electrode surface and the second electrode surface, and the first electrode is formed. Since the gas is exhausted from a substantially central portion or a substantially central portion of the second electrode, the source gas flows substantially parallel to the first and second electrode surfaces. Therefore, a uniform flow of the source gas is created between the first and second electrodes. In addition, when a source gas produced by a solution vaporization method is supplied, even if particles are generated on the nozzle surface, the particles flow together with the source gas and are exhausted from an exhaust port, so that the particles may fall onto the substrate surface. Disappears. As a result, cleanliness is ensured during film formation.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a thin film manufacturing apparatus according to the present invention will be described with reference to the schematic sectional view of FIG.

As shown in FIG. 1, a first thin film manufacturing apparatus 1
Is a plasma CVD apparatus, in which a first electrode 21 and a second electrode 22 are installed inside a reaction chamber 11 so as to face each other. A high frequency power supply 31 for supplying RF (for example, 13.56 MHz) power is connected to the first electrode 21. Further, a shield plate 32 is provided so as to surround the side periphery and the upper side (the side opposite to the second electrode 22) of the first electrode 21.

On the other hand, a mounting portion (not shown) for mounting the substrate 101 on which a film is to be formed is formed on a surface of the second electrode 22 facing the first electrode 21. . For example, the placement unit described above is configured by a clamp mechanism that clamps the substrate 101. Alternatively, a low temperature (for example, 450 ° C.
The following may be constituted by an electrostatic chuck as long as the film is formed.

A heater 41 for heating the substrate 101 mounted on the second electrode 22 is provided inside the second electrode 22. The heater 41 is formed of, for example, a heating wire, and not shown at the heating wire end,
Power supply and temperature controller are connected. The temperature controller may control the temperature of the heater by a voltage, for example, or may control the temperature of the heater by an electric current. The heating source is not limited to a heating wire, and for example, an infrared lamp heating device or the like can be used.

The reaction chamber 1 is provided on the side wall of the reaction chamber 11.
1 with an outlet in it, a vaporizer (not shown)
(E.g., four) nozzles 12 (12a) capable of injecting a raw material gas as a raw material of a thin film vaporized in a direction substantially parallel to the respective electrode surfaces of the first and second electrodes 21 and 22. To 12d) (note that the nozzle 12b is not shown) so that the side wall 11S of the reaction chamber 11 is point-symmetric.
It is installed in. A gas supply system (not shown) for supplying a raw material gas and having a vaporizer is provided for these nozzles 12.
Is connected. The material gas introduced from the gas supply system is supplied by the nozzle 12 between the first electrode 21 and the second electrode 22 and substantially parallel to the electrode surface.

As described above, since the nozzle 12 is installed at a remote position where it is hard to receive the radiant heat of the heater 41, the nozzle 12 is not excessively heated. Become.

The nozzle 12 is preferably provided with a heating means (not shown) for heating the nozzle 12 to, for example, 150 ° C. to 250 ° C. As this heating means,
For example, it is constituted by a heating wire, and a power supply and a temperature controller (not shown) are connected to an end of the heating wire. This temperature controller may control, for example, the amount of heat generated by the heating wire by voltage, or may control the amount of heat generated by the heating wire by current. The heating source is not limited to a heating wire, and for example, an infrared lamp heating device or the like can be used. In addition, it is preferable to provide a vaporizer provided in the gas supply system and a heating means (not shown) for heating the pipe to the nozzle 12 from the vaporizer to, for example, 150 ° C. to 250 ° C. As the heating means, it is possible to use one having the configuration described above.

An exhaust port 23 for exhausting the source gas supplied between the first and second electrodes 21 and 22 is formed at the center of the second electrode 22. Although not shown, an exhaust system provided with an exhaust device, a valve, and the like is connected to the exhaust port 23. Thereby, the nozzle 1
The raw material gas supplied from the first and second electrodes 21 and 2
The air is exhausted by the exhaust port 23 passing between the two spaces. As described above, since the source gas flows,
Even if the nozzles 12 are excessively heated and particles are generated in the nozzles 12, the particles also flow along the flow of the source gas, so that the particles do not fall on the substrate 101.

The second electrode 22 may be configured so as to rotate in a state where the distance between the electrodes is kept constant, that is, around the Z axis passing through the center of the electrode and perpendicular to the electrode surface (for example, in the direction of arrow A). . For example, a rotation shaft 24 is provided at the lower center of the second electrode 22, and an exhaust path 25 continuous with the exhaust port 23 is formed inside the rotation shaft 24. Further, by providing a drive unit (not shown) for rotating the rotation shaft 24, a configuration in which the second electrode 22 rotates on its own can be realized.

First thin film manufacturing apparatus 1 as described above
Then, a source gas is supplied from the nozzle 12 between the first and second electrodes 21 and 22, RF power is applied thereto by a high frequency power source 31 to generate discharge plasma, and the supplied source gas is discharged. The thin film is formed by being decomposed by the plasma and depositing the decomposed product on the substrate 101 provided on the second electrode 22.

Next, the nozzle 12 will be described with reference to FIG. As shown in FIG. 2, the nozzle 12 is a so-called enlarged tube in which the cross section of the gas outlet 12out is larger than the cross section of the gas inlet 12in. As an example, the cross-section of the flow path of the nozzle 12 has a rectangular shape, and the cross-sectional shape thereof is such that the gas flowing through the inside of the gas inlet 12
The gas continuously expands toward the gas outlet 12out. The outlet section 12S has a constant cross-sectional area of the flow path, and the flow path length L is formed to be equal to or longer than the nozzle outlet width W, for example.
Further, the nozzle outlet height H is formed to be not more than half the nozzle outlet width W.

In the first embodiment, as shown in FIG. 3, the nozzles 12 (12a, 12b, 12c, 12d)
Are provided at four locations on the side wall 11S of the reaction chamber 11 so as to be point-symmetrical, but it is preferable that the number of nozzles 12 is two or more and provided at a location that is point-symmetrical. That is, the nozzles 12 are provided so that the gas flow indicated by the arrow G ejected from the nozzles 12 spreads from the nozzles 12 between the electrodes, smoothly flows toward the exhaust port 23, and has a uniform flow between the electrodes. Can be However, as long as the second electrode 22 on which the substrate 101 is mounted rotates in the direction of the arrow, for example, the nozzle 12 may be provided at one location. Note that the exhaust port 23 may be composed of a plurality of small ports 23s as shown here. Further, the rotation direction of the second electrode 22 may be reverse.

Next, an embodiment of a thin film manufacturing method will be described by way of example, in which a ferroelectric SrBi ₂ Ta ₂ O ₉ thin film is manufactured using the first thin film manufacturing apparatus 1 described above.

After a thermal oxide film of SiO ₂ is formed to a thickness of, for example, 300 nm on a silicon substrate, a titanium film is formed to a thickness of, for example, 30 nm by sputtering, and further serves as a lower electrode of a capacitor. A platinum film is formed to a thickness of, for example, 200 nm. The substrate 101 formed as described above is placed on the reaction chamber 1 of the first thin film manufacturing apparatus 1 described above.
The first electrode 22 is placed on the second electrode 22 disposed in the first electrode 22. At this time, the second electrode 22 serving as the substrate installation portion is heated by the heater 41 to, for example, about 200 ° C. to 450 ° C.

Then, Bi (C
_{6 H 5) 3, Sr (} THD) 2 · tetraglyme, Ta
A liquid source obtained by dissolving each organic metal of (i-OC ₃ H ₇ ) ₄ THD at a predetermined concentration in a THF (tetrahydrofuran) solvent is mixed at a predetermined ratio, and the mixed solution is kept at 200 ° C. in a vaporizer ( (Not shown). Then, the gasified mixed gas is transported toward the reaction chamber together with the carrier gas of argon (for example, at a flow rate of 200 sccm), and oxygen (for example, at a flow rate of 200 sc
cm) and introduced into the reaction chamber 11. Then, air is exhausted from the exhaust port 23 so that the inside of the reaction chamber 11 becomes about 13.3 Pa to 40.0 Pa.
The power is set to 300 W and the first and second electrodes 21,
A plasma discharge is generated between the substrates 22 to form a thin film on the substrate 101.

Thereafter, the obtained thin film is subjected to a heat treatment for one hour in an oxygen atmosphere at a normal pressure of 700 ° C. As a result, for example, a 100 nm thick Sr _x Bi _y Ta _2.0 O _w film (where x, y, and w are 0.6 ≦ x ≦ 1.2, 1.7)
≦ y ≦ 2.5, w = 9 ± d, and 0 ≦ d ≦ 1.0). Then, the above Sr _x Bi by sputtering
_A platinum film to be an upper electrode is formed on the _y Ta _2.0 O _w
It is formed to a thickness of 00 nm. Thereafter, heat treatment is performed in an oxygen atmosphere at 725 ° C. for one hour.

The PV hysteresis of the ferroelectric capacitor formed as described above was measured.
^{10μC / cm 2 ~22μC / cm 2} , 2Ec = 100
Good values of kV / cm to 150 kV / cm were obtained.

Next, a second thin film manufacturing apparatus according to the present invention will be described.
Will be described with reference to the schematic cross-sectional view of FIG. 4, the same components as those shown in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 4, the second thin film manufacturing apparatus 2
In the first embodiment, a first electrode 21 is provided on a lower side in the reaction chamber 11, a second electrode 22 is provided on an upper side in the reaction chamber 11, and a high frequency of 13.56 MHz is applied to the first electrode 21. The high-frequency power supply 31 is connected to the second electrode 22 on which the substrate 101 is held.
A low frequency power supply 33 for applying a low frequency of 0 kHz is connected. In this configuration, an exhaust port 23 is formed in the first electrode 21. Further, a shield plate 32 is provided on the side periphery and the lower surface of the first electrode 21. As described above, by connecting the low-frequency power supply 33, the first and second electrodes 21 and
By generating uniform plasma and controllable low-energy ion bombardment between the layers 22, film quality such as film step coverage, film stress, and film density are improved.

The other structure is the same as that described in the first embodiment. A heater 41 for heating the substrate 101 held inside the second electrode 22 is built in. The side wall of the reaction chamber 11 is provided with a blow-out port in the reaction chamber 11 so that a raw material gas to be a raw material of a thin film vaporized by a vaporizer (not shown) is supplied to the first and the second. A plurality of (for example, four) nozzles 1 that can be ejected in a direction substantially parallel to each electrode surface of the electrodes 21 and 22
2 (12a to 12d) (the nozzle 12b is not shown) is installed on the side wall 11S of the reaction chamber 11 so as to be point-symmetric. These nozzles 12 are connected to a gas supply system (not shown) for supplying a source gas. The material gas introduced from the gas supply unit by the nozzle 12 is supplied between the first electrode 21 and the second electrode 22 and substantially parallel to the electrode surface.

As described above, since the nozzle 12 is installed at a remote position where it is hard to receive the radiant heat of the heater 41, the nozzle 12 is not excessively heated. Become.

The nozzle 12, the vaporizer, and the piping from the vaporizer to the nozzle 12 are preferably provided with the same heating means (not shown) as described above.

Although not shown, the exhaust port 23 is connected to an exhaust system provided with an exhaust device, a valve, and the like. As a result, the source gas supplied from the nozzle 12 passes through the space between the first and second electrodes 21 and 22 and is exhausted by the exhaust port 23. As described above, since the source gas flows, even if the nozzle 12 is heated and particles are generated in the nozzle 12, the particles also flow along the flow of the source gas, so that the particles fall on the substrate 101. Never.

Furthermore, the second electrode 22 may be configured to keep the electrode interval constant, that is, to rotate around the Z axis passing through the center of the electrode and perpendicular to the electrode surface (for example, in the direction of arrow A). Good. For example, a configuration in which a rotating shaft 26 is provided at the center of the upper side of the second electrode 22 and a driving unit (not shown) for rotating the rotating shaft 26 is provided, so that the second electrode 22 rotates on its own axis. realizable.

Next, the third embodiment of the thin film manufacturing apparatus according to the present invention will be described.
The embodiment will be described with reference to a schematic sectional view of FIG. 5, the same components as those shown in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 5, a third thin film manufacturing apparatus 3
Is a thin film manufacturing apparatus described with reference to FIG.
The shower nozzle 43 is provided on the first electrode 21, and the other configuration is the same as that of the first thin film manufacturing apparatus 1.

That is, the first inside of the reaction chamber 11
The electrode 21 and the second electrode 22 face each other. The first electrode 21 has an RF (for example, 13.
A high frequency power supply 31 for applying power (56 MHz) is connected. Further, a shield plate 32 is provided so as to surround the side periphery and the upper side (the side opposite to the second electrode 22) of the first electrode 21.

The first electrode 21 has a plurality of gas ejection holes 4 for ejecting gas from the lower surface of the first electrode 21.
4 is formed. A gas supply unit (not shown) by the shower nozzle 43
Carrier gas [e.g., a rare gas such as argon (Ar) or helium (He)] or oxygen (O ₂ ), nitrogen (N ₂ ), chlorine (Cl ₂ ), or boron chloride (BCl ₃ ). , Trifluoromethane (CHF ₃ ),
A source gas other than the organic metal such as ethane fluoride (C ₂ F ₆ ) is supplied between the first electrode 21 and the second electrode 22. Of the above gases, chlorine (C
l ₂ ), boron chloride (BCl ₃ ), trifluoromethane (CHF ₃ ), ethane fluoride (C ₂ F ₆ ) and the like can be used as a cleaning gas when cleaning the inside of the reaction chamber 11.

On the other hand, a mounting portion (not shown) for mounting the substrate 101 on which a film is to be formed is formed on a surface of the second electrode 22 facing the first electrode 21. . For example, the placement unit described above is configured by a clamp mechanism that clamps the substrate 101. Alternatively, a low temperature (for example, 450 ° C.
The following may be constituted by an electrostatic chuck as long as the film is formed.

A heater 41 for heating the substrate 101 mounted on the second electrode 22 is provided inside the second electrode 22. The heater 41 is connected to the first
It has the same configuration as that described in the embodiment.

The second electrode 22 may be connected to a low-frequency power supply (not shown) for applying low-frequency power (for example, 250 kHz).

On the side wall of the reaction chamber 11, the reaction chamber 1
1 with an outlet in it, a vaporizer (not shown)
(E.g., four) nozzles 12 (12a) capable of injecting a raw material gas as a raw material of a thin film vaporized in a direction substantially parallel to the respective electrode surfaces of the first and second electrodes 21 and 22. To 12d) (note that the nozzle 12b is not shown) so that the side wall 11S of the reaction chamber 11 is point-symmetric.
It is installed in. The nozzle 12 is, for example, as shown in FIG.
These nozzles 12 are connected to a gas supply system (not shown) for supplying a raw material gas and having a vaporizer. The material gas introduced from the gas supply system is supplied by the nozzle 12 between the first electrode 21 and the second electrode 22 and substantially parallel to the electrode surface.

As described above, since the nozzle 12 is installed at a remote position where it is hard to receive the radiant heat of the heater 41, the nozzle 12 is not excessively heated. Become.

The nozzle 12, the vaporizer, and the piping from the vaporizer to the nozzle 12 are preferably provided with the same heating means (not shown) as described in the first embodiment.

An exhaust port 23 for exhausting the source gas supplied between the first and second electrodes 21 and 22 is formed at the center of the second electrode 22. Although not shown, an exhaust system provided with an exhaust device, a valve, and the like is connected to the exhaust port 23. Thereby, the nozzle 1
The raw material gas supplied from the first and second electrodes 21 and 2
The air is exhausted by the exhaust port 23 passing between the two spaces. As described above, since the source gas flows,
Even if the nozzles 12 are excessively heated and particles are generated in the nozzles 12, the particles also flow along the flow of the source gas, so that the particles do not fall on the substrate 101.

Further, since the shower nozzle 43 is formed on the first electrode 21, by blowing gas from the shower nozzle 43, the reaction products are prevented from adhering to the surface of the first electrode 21. You. Therefore, particles are prevented from falling onto the substrate 101 from the electrode surface of the first electrode 21, so that the frequency of cleaning can be reduced.

Further, as described in the first embodiment, the second electrode 22 is kept in a state where the distance between the electrodes is kept constant, that is, the Z electrode which passes through the center of the electrode and is perpendicular to the electrode surface. It may be configured to rotate around an axis (for example, in the direction of arrow A). For example, a rotation shaft 24 is provided at the lower center of the second electrode 22, and an exhaust path 25 continuous with the exhaust port 23 is formed inside the rotation shaft 24. Further, by providing a driving unit (not shown) for rotating the rotating shaft 24, the second
Can be realized.

The third thin film manufacturing apparatus 3 as described above
Then, the raw material gas is supplied between the first and second electrodes 21 and 22 from the nozzle 12, and at the same time, for example, argon gas is blown out from the shower nozzle 43. Then, RF power is applied by the high-frequency power source 31 to generate discharge plasma between the electrodes, the supplied raw material gas is decomposed by the discharge plasma, and the decomposed product is placed on the substrate 101 placed on the second electrode 22. To form a thin film.

Next, as an example of the embodiment of the thin film manufacturing method, a ferroelectric material S
The case where an rBi ₂ Ta ₂ O ₉ thin film is formed will be described.

After a thermal oxide film of SiO ₂ is formed to a thickness of, for example, 300 nm on a silicon substrate, a titanium film is formed to a thickness of, for example, 30 nm by sputtering, and further serves as a lower electrode of a capacitor. A platinum film is formed to a thickness of, for example, 200 nm. The substrate 101 thus formed is placed in the reaction chamber 1 of the third thin film manufacturing apparatus 3 described above.
It is placed on the second electrode 22 installed in the first electrode 22. At this time, the second electrode 22 serving as the substrate installation portion is
Is heated to, for example, about 550 ° C. to 650 ° C.

Then, Bi (C
_{6 H 5) 3, Sr (} THD) 2 · tetraglyme, Ta
A liquid source obtained by dissolving each organic metal of (i-OC ₃ H ₇ ) ₄ THD at a predetermined concentration in a THF (tetrahydrofuran) solvent is mixed at a predetermined ratio, and the mixed solution is kept at 200 ° C. in a vaporizer ( (Not shown). Then, the gasified mixed gas is conveyed in the direction of the reaction chamber 11 together with the carrier gas of argon (for example, the flow rate is set to 200 sccm), and oxygen (for example, a flow rate of 20
0 sccm) and introduce it into the reaction chamber 11. At the same time, a shower nozzle 27 provided on the first electrode 21 supplies argon (for example, with a flow rate of 100 scc).
m). And the inside of the reaction chamber 11 is 13.3.
The gas is evacuated to about Pa to 40.0 Pa, the RF power applied from the RF power supply 31 is set to 300 W, and a plasma discharge is generated between the first and second electrodes 21 and 22, and the To form a thin film.

Since the argon gas is blown out from the shower nozzle 43 on the first electrode 21 side, the organic metal gas is decomposed and adheres on the first electrode 21 heated by the radiant heat of the heater 31 for heating the substrate. As a result, the problem of generating particles is solved, and the problem that the plasma discharge becomes unstable because the insulating film adheres to the surface of the first electrode 21 is also solved. Will be possible.

After that, the obtained thin film is subjected to a heat treatment for one hour in an oxygen atmosphere at 650 ° C. and normal pressure. As a result, for example, a 100 nm thick Sr _x Bi _y Ta _2.0 O _w film (where x, y, and w are 0.6 ≦ x ≦ 1.2, 1.7)
≦ y ≦ 2.5, w = 9 ± d, and 0 ≦ d ≦ 1.0). Then, the above Sr _x Bi by sputtering
_A platinum film to be an upper electrode is formed on the _y Ta _2.0 O _w
It is formed to a thickness of 00 nm. Thereafter, heat treatment is performed in an oxygen atmosphere at 700 ° C. for one hour.

The PV hysteresis of the ferroelectric capacitor formed as described above was measured.
^{10μC / cm 2 ~20μC / cm 2} , 2Ec = 100
Good values of kV / cm to 150 kV / cm were obtained.

Next, the fourth embodiment relating to the thin film manufacturing apparatus of the present invention
Will be described with reference to a schematic sectional view of FIG. 6, the same components as those shown in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 6, a fourth thin film manufacturing apparatus 4
Is a thin film manufacturing apparatus described with reference to FIG.
This is a configuration in which a cooler 47 is provided on the first electrode 21, and the other configuration is the same as that of the first thin film manufacturing apparatus 1.

That is, the fourth thin film manufacturing apparatus 4 is a plasma CVD apparatus, and the first electrode 21 and the second electrode 22 are installed inside the reaction chamber 11 so as to face each other. The first electrode 21 has an RF (eg, 13.5).
(6 MHz) A high frequency power supply 31 for applying power is connected. Further, a shield plate 32 is provided so as to surround the side periphery and the upper side (the side opposite to the second electrode 22) of the first electrode 21.

The first electrode 21 is provided with a cooler 47 for cooling the electrode surface inside the first electrode 21. The cooler 47 includes a coolant flow path 48 formed in the first electrode 21 and a coolant supply source (not shown) for circulating the coolant through the coolant flow path 48.
As the refrigerant, it is possible to use a normal refrigerant such as, for example, water or ammonia.

On the other hand, a mounting portion (not shown) for mounting the substrate 101 on which a film is to be formed is formed on a surface of the second electrode 22 facing the first electrode 21. . For example, the placement unit described above is configured by a clamp mechanism that clamps the substrate 101. Alternatively, a low temperature (for example, 450 ° C.
The following may be constituted by an electrostatic chuck as long as the film is formed.

Further, a heater 41 for heating the substrate 101 mounted on the second electrode 22 is provided inside the second electrode 22. As the heater 41, a heater having the same configuration as that described in the first embodiment can be used.

The second electrode 22 may be connected to a low-frequency power supply (not shown) for applying low-frequency power (for example, 250 kHz).

The reaction chamber 1 is placed on the side wall of the reaction chamber 11.
1 with an outlet in it, a vaporizer (not shown)
(E.g., four) nozzles 12 (12a) capable of injecting a raw material gas as a raw material of a thin film vaporized in a direction substantially parallel to the respective electrode surfaces of the first and second electrodes 21 and 22. To 12d) (note that the nozzle 12b is not shown) so that the side wall 11S of the reaction chamber 11 is point-symmetric.
It is installed in. The nozzle 12 is, for example, as shown in FIG.
These nozzles 12 are connected to a gas supply system (not shown) for supplying a raw material gas and having a vaporizer. The material gas introduced from the gas supply system is supplied by the nozzle 12 between the first electrode 21 and the second electrode 22 and substantially parallel to the electrode surface.

As described above, since the nozzle 12 is installed at a remote position where it is hard to receive the radiant heat of the heater 41, the nozzle 12 is not excessively heated. Become.

The nozzle 12, the vaporizer, and the pipe from the vaporizer to the nozzle 12 are preferably provided with the same heating means (not shown) as described in the first embodiment.

An exhaust port 23 for exhausting the raw material gas supplied between the first and second electrodes 21 and 22 is formed at the center of the second electrode 22. Although not shown, an exhaust system provided with an exhaust device, a valve, and the like is connected to the exhaust port 23. Thereby, the nozzle 1
The raw material gas supplied from the first and second electrodes 21 and 2
The air is exhausted by the exhaust port 23 passing between the two spaces. As described above, since the source gas flows,
Even if the nozzles 12 are excessively heated and particles are generated in the nozzles 12, the particles also flow along the flow of the source gas, so that the particles do not fall on the substrate 101.

As described in the first embodiment, the second electrode 22 is kept in a state in which the distance between the electrodes is kept constant, that is, the Z electrode which passes through the center of the electrode and is perpendicular to the electrode surface. It may be configured to rotate around an axis (for example, in the direction of arrow A). For example, a rotation shaft 24 is provided at the lower center of the second electrode 22, and an exhaust path 25 continuous with the exhaust port 23 is formed inside the rotation shaft 24. Further, by providing a driving unit (not shown) for rotating the rotating shaft 24, the second
Can be realized.

The fourth thin film manufacturing apparatus 4 as described above
Then, the raw material gas is supplied between the first and second electrodes 21 and 22 from the nozzle 12, and at the same time, the first gas is supplied by the cooler 47.
The electrode surface of the electrode 21 is cooled. And the high frequency power supply 3
(1) Applying RF power to generate discharge plasma between the electrodes, decompose the supplied source gas by the discharge plasma, and deposit the decomposed product on the substrate 101 provided on the second electrode 22 To form a thin film.

As described above, since the first electrode 21 is provided with the cooler 47, the first electrode 21 is cooled by the cooler 47 to a desired temperature of, for example, 50 ° C. to 250 ° C. Therefore, the first electrode 2 heated by the radiant heat from the heater 41 installed in the second electrode 22
It is possible to prevent the organic metal gas from decomposing and adhering on one surface to generate particles. At the same time, since the insulating film adheres to the surface of the first electrode 21, the problem that the plasma discharge becomes unstable is solved, and a stable film formation can be performed for a long time. Therefore, particles are prevented from falling from the electrode surface of the first electrode 21 onto the substrate 101, so that the frequency of cleaning can be reduced.

Next, an embodiment of a thin film manufacturing method will be described by way of example in which a ferroelectric SrBi ₂ Ta ₂ O ₉ thin film is manufactured using the fourth thin film manufacturing apparatus 4 described above.

After a SiO ₂ film as a thermal oxide film is formed on a silicon substrate to a thickness of, for example, 300 nm, a titanium film is formed to a thickness of, for example, 30 nm by sputtering, and further thereon becomes a lower electrode of a capacitor. A platinum film is formed to a thickness of, for example, 200 nm. The substrate 101 thus formed is placed in the reaction chamber 1 of the third thin film forming apparatus 3 described above.
It is installed on the second electrode 22 installed inside the device 1. At this time, the second electrode 22 serving as the substrate installation portion is
To about 550 ° C to 650 ° C.

Then, Bi (C ₆ H ₅ ) ₃ , Sr (TH
D) ₂・ tetraglyme, Ta (i-OC ₃ H ₇ ) ₄ TH
A liquid source in which each organic metal of D is dissolved in a THF (tetrahydrofuran) solvent at a predetermined concentration is mixed at a predetermined ratio, and the mixture is gasified in a vaporizer (not shown) maintained at 200 ° C. . The gasified gas mixture is conveyed in the direction of the reaction chamber 11 together with a carrier gas of argon (for example, at a flow rate of 200 sccm), and mixed with oxygen (for example, at a flow rate of 200 sccm) in a stage preceding the reaction chamber 11. 11 is introduced. At the same time, the cooler 47 provided in the first electrode 21 cools the electrode surface of the first electrode 21 to a desired temperature of 50C to 250C. And the inside of the reaction chamber 11 is 13.3P
a to about 40.0 Pa, and the RF power supply 3
1 to apply 300 W of RF power to the first and second
A plasma discharge is generated between the electrodes 21 and 22 to form a thin film on the substrate 101.

As described above, the first electrode 21 is cooled by the cooler 47, so that the first electrode 21 is heated by the radiant heat from the heater 41 installed in the second electrode 22. It is possible to prevent the organic metal gas from decomposing and attaching to generate particles. With it, the first
Since the insulating film adheres to the surface of the electrode 21, the problem that the plasma discharge becomes unstable is also solved, and the film can be stably formed for a long time.

Thereafter, the obtained thin film is subjected to a heat treatment for one hour in an oxygen atmosphere at 650 ° C. and normal pressure. As a result, for example, a 100 nm thick Sr _x Bi _y Ta _2.0 O _w film (where x, y, and w are 0.6 ≦ x ≦ 1.2, 1.7)
≦ y ≦ 2.5, w = 9 ± d, and 0 ≦ d ≦ 1.0). Then, the above Sr _x Bi by sputtering
_A platinum film to be an upper electrode is formed on the _y Ta _2.0 O _w
It is formed to a thickness of 00 nm. Thereafter, heat treatment is performed in an oxygen atmosphere at 700 ° C. for one hour.

The PV hysteresis of the ferroelectric capacitor formed as described above was measured.
^{10μC / cm 2 ~20μC / cm 2} , 2Ec = 100
Good values of kV / cm to 150 kV / cm were obtained.

Next, the fifth embodiment of the thin film manufacturing apparatus according to the present invention will be described.
The embodiment will be described with reference to the block diagram of FIG.
FIG. 7 illustrates an example of a gas line of the second thin film manufacturing apparatus as a representative of the first to fourth thin film manufacturing apparatuses.

As shown in FIG. 7, first, a gas supply system 50 to the reaction chamber 11 of the second thin film manufacturing apparatus 2 will be described below.

In the reaction chamber 11, a pipe 52 for supplying a source gas from a vaporizer 51 is connected to a nozzle (not shown) provided on a side wall of the reaction chamber 11. The wiring 52 is provided with a three-way valve 53 that branches from the vaporizer 51 side to the exhaust system 90 of the vaporizer 51, and furthermore, a pipe 78 that is directly connected to the exhaust system 70 of the reaction chamber 11 without passing through the reaction chamber 11. Are provided. The vaporizer 5
1 is connected to a liquid supply pump 55 for supplying a source gas. A pipe 56 for introducing a carrier gas is also provided.
Is connected. An open / close valve 57 is installed in the pipe 56. Further, the three-way valve 54 and the reaction chamber 11
A line 58 for supplying oxygen to the reaction chamber 11 is connected to the pipe 52 between the first and second lines. An open / close valve 59 is provided on the wiring 58.

Further, for example, argon (Ar), helium (He) is applied to a shower nozzle (not shown) formed on a first electrode (not shown) installed in the reaction chamber 11.
Supply rare gases such as oxygen (O ₂ ), nitrogen (N ₂ ), chlorine (Cl ₂ ), boron chloride (BCl ₃ ), trifluoromethane (CHF ₃ ), ethane fluoride (C ₂ F ₆ ) Pipe 61 is connected. An open / close valve 62 is installed in the pipe 61.

Next, the exhaust system 70 of the reaction chamber 11 will be described below. A first exhaust pipe 71 is connected to an exhaust port (not shown) provided in a second electrode (not shown) in the reaction chamber 11. An exhaust pump 77 composed of a conductance valve 72, a trap 73, an on-off valve 74, a turbo molecular pump 75, an on-off valve 76, a rotary pump or a booster pump is connected in series with the first exhaust pipe 71 from the reaction chamber 11 side. They are provided in order. Therefore, the exhaust system of this exhaust system is provided with the turbo molecular pump 7.
5 and an exhaust pump 77 composed of a rotary pump or a booster pump.

The pipe 78 is connected to a first exhaust pipe 71 between the reaction chamber 11 and the conductance valve 72. Further, a pipe 79 directly connected to the exhaust pump 77 is branched from a first exhaust pipe 71 between the opening / closing valve 74 and the turbo molecular pump 75. An open / close valve 80 is provided in the pipe 79. A pipe 81 is branched from a pipe 79 between the on-off valve 80 and the exhaust pump 77, and a leak valve 82 is provided at an end of the pipe 81. Further, a pipe 83 branched from the pipe 81 and connected to the first exhaust pipe 71 on the exhaust side of the exhaust pump 77 is provided. An open / close valve 84 is provided in the pipe 83.

Further, the reaction chamber 11 is provided with a second exhaust pipe 85 connected to the first exhaust pipe 71 between the opening / closing valve 76 and the exhaust pump 77. An opening / closing valve 86 is installed in the second exhaust pipe 85, and a pipe 8 is connected through the second exhaust pipe 85 between the opening / closing valve 86 and the reaction chamber 11.
7 is branched, and a leak valve 88 is installed at an end of the pipe 87.

Next, the exhaust system 90 of the vaporizer 51 will be described. A third exhaust pipe 91 is connected to a branch from a three-way valve 53 provided on the reaction chamber 11 side from the vaporizer 51. In the third exhaust pipe 91, a conductance valve 92, a trap 93,
Exhaust pump (eg, dry pump) 94 serving as an exhaust device
Are installed in series.

The above-described gas line is an example, and any other gas line can be connected to the reaction chamber 11 of the above-mentioned thin film manufacturing apparatus.

In a thin film manufacturing apparatus in which a shower nozzle is not formed on the first electrode, the pipe 61 for supplying a cleaning gas to the reaction chamber 11 may be directly described.

Next, an example of a standard operation procedure of the gas line will be described below.

First, all open / close valves are kept closed, and a substrate (not shown) on which a film is to be formed is connected to a second electrode (not shown) provided with a heater (not shown) in the reaction chamber 11. (Not shown). The substrate is heated to a predetermined temperature by a heater.

In this state, the opening / closing valve 59 is opened to introduce oxygen (O ₂ ) gas into the reaction chamber 11. At the same time, the opening / closing valve 74 and the opening / closing valve 76 are opened to turn on the turbo molecular pump 75 and the exhaust pump 77. The inside of the reaction chamber 11 is maintained at a predetermined pressure by operating and further adjusting the conductance valve 72. Then, a high-frequency power is applied from a high-frequency power supply (not shown) to generate a plasma discharge between the electrodes.

At the same time, the raw material solution in which the organic metal is dissolved is supplied to the vaporizer 51 by operating the liquid supply pump 55, and the raw material solution is vaporized by the vaporizer 51. Then, the carrier gas is supplied to the vaporizer 51 by opening the opening / closing valve 56, and at the same time, the three-way valve 53 is opened to the vaporizer exhaust system 90 side to exhaust the raw material gas together with the carrier gas.

Thereafter, after the plasma discharge is stabilized, the three-way valves 53 and 54 are opened so that the vaporizer 51 and the reaction chamber 11 communicate with each other. Oxygen (O ₂ ) gas supplied by a pipe 58 is mixed immediately before the chamber 11, and the mixed gas is introduced into the reaction chamber 11. Then, the source gas and oxygen are decomposed by the plasma discharge, and the decomposed product deposits on the substrate to form a thin film.

When a thin film is formed to a predetermined thickness on the substrate, the three-way valves 53 and 54 are operated to operate the reaction chamber 11.
The film formation is terminated by stopping the supply of the source gas into the inside. At the same time, the application of the high frequency power is stopped to stop the plasma discharge. Liquid supply pump 5
The operation of Step 5 is stopped, and the opening and closing valves 57 and 59 are closed to stop the supply of the carrier gas and oxygen (O ₂ ).

Thereafter, after the gas in the reaction chamber 11 is exhausted, the open / close valves 74 and 86 are closed, and the exhaust device is stopped. Then, the leak valve 88 is opened to purge, for example, nitrogen into the reaction chamber 11, and the leak valve 88 is closed. After that, the substrate is taken out of the reaction chamber 11.

After the substrate is taken out of the reaction chamber 11, the open / close valves 74 and 86 are opened, and the inside of the reaction chamber 11 is evacuated by operating the exhaust device. Then, a film is formed by repeating the above-described procedure.

When the inside of the reaction chamber 11 is to be cleaned after film formation, the opening / closing valve 62 is opened, a cleaning gas is introduced into the reaction chamber 11 from the pipe 61, and high-frequency power is applied to apply a high-frequency power. Cleaning is performed by plasma etching the inside. After cleaning,
The application of the high-frequency power is stopped, and the opening and closing valve 62 is closed to stop the supply of the cleaning gas. As an example, the cleaning gas includes a rare gas (argon gas or helium gas) and at least one of chlorine gas, boron chloride gas, trifluoromethane gas, and ethane fluoride gas.
A mixture of seed gases is used.

When the gas in the vaporizer 51 is exhausted, the three-way valve 53 is connected to the vaporizer 51 and the exhaust system 9 of the vaporizer.
The gas in the carburetor 51 can be discharged by opening so that 0 communicates and operating the exhaust pump (dry pump) 94. Further, when the vaporizer 51 is periodically cleaned with the solvent gas, a solvent gas for cleaning is supplied to the vaporizer 51 and vaporized by an exhaust pump (dry pump) 94 connected to an exhaust system 90 of the vaporizer. The inside of the vessel 51 may be evacuated.

Next, a ferroelectric SrBi ₂ Ta ₂ O ₉ thin film was manufactured using the thin film manufacturing apparatus described with reference to FIG. The details will be described below.

After a SiO ₂ film as a thermal oxide film is formed on a silicon substrate to a thickness of, for example, 300 nm, a titanium film is formed to a thickness of, for example, 30 nm by sputtering, and further thereon becomes a lower electrode of a capacitor. A platinum film is formed to a thickness of, for example, 200 nm. The substrate on which the film was formed in this manner was used for the reaction chamber 11 of the thin film forming apparatus described with reference to FIG.
Is placed on the second electrode. At this time, the second electrode serving as the substrate installation portion is heated to about 200 ° C. to 450 ° C. by the heater.

Then, Bi (C ₆ H ₅ ) ₃ and Sr (TH
D) ₂・ tetraglyme, Ta (i-OC ₃ H ₇ ) ₄ TH
A liquid source in which each organic metal of D is dissolved in a THF (tetrahydrofuran) solvent at a predetermined concentration is mixed at a predetermined ratio, and the mixed solution is introduced into a vaporizer 51 maintained at 200 ° C. by a liquid supply pump 55, It is gasified in the vaporizer 51. Then, the gasified mixed gas is introduced into a vaporizer 51 by using a carrier gas of argon (for example, a flow rate of 200 s).
ccm), and the three-way valve 53 is opened so as to flow from the vaporizer 51 to the exhaust system 90 of the vaporizer. At that time, the exhaust pump 94 of the exhaust system 90 of the vaporizer is operating. Therefore, first, the mixed gas is exhausted together with the carrier gas.

On the other hand, opening and closing valve 59 opens reaction chamber 11.
(For example, the flow rate is set to 200 sccm). And the inside of the reaction chamber 11 is 13.3 Pa to 40.0 Pa
And RF power (13.56 MH)
z) is set to 300 W, a plasma discharge is generated between the first and second electrodes, and a state where a stable RF plasma discharge is lit is maintained for 10 seconds to 10 minutes.

Thereafter, the three-way valves 53 and 54 are operated so that the vaporizer 51 and the reaction chamber 11 communicate with each other, and the raw material gas is transported in the direction of the reaction chamber 11 together with the argon carrier gas. The oxygen gas supplied through the pipe 58 is mixed, and the mixed gas is introduced into the reaction chamber 11. Then, the source gas and oxygen are decomposed by plasma discharge, and the decomposed product is deposited on the substrate to form SrBi ₂ T
a ₂ O ₉ thin film is formed.

When the required time for forming the SrBi ₂ Ta ₂ O ₉ thin film of a predetermined thickness has been reached, the three-way valve 5
The film formation is completed by operating 3 and 54 to stop the supply of the source gas into the reaction chamber 11. Thereafter, the respective opening / closing valves are operated to stop the supply of the liquid raw material, the supply of oxygen, and the supply of the RF power, and the liquid supply pump
Stop the operation of. By forming a film in such a procedure,
Disappearance or instability of plasma at the start of film formation is prevented.

In FIG. 7, the gas line of the third thin film manufacturing apparatus described with reference to FIG. 5 has been described as an example, but this gas line is connected to the first thin film manufacturing apparatus 1 described with reference to FIG. The same can be applied to the second thin film manufacturing apparatus 2 described with reference to FIG. 4 and the fourth thin film manufacturing apparatus 4 described with reference to FIG.

Further, in the third thin film manufacturing apparatus 3 described with reference to FIG. 5, a shower nozzle 43 and a cooler 47 described with reference to FIG. In the first, third, and fourth thin film manufacturing apparatuses 1, 3, and 4, a low-frequency power supply may be connected to the second electrode 22 on which the substrate 101 is mounted.

[0111]

As described above, according to the thin film manufacturing apparatus of the present invention, there is provided a nozzle for ejecting a source gas in a direction substantially parallel to the first electrode surface and the second electrode surface,
In addition, since an exhaust port through which gas in the reaction chamber is exhausted is provided at a substantially central portion of the first electrode or a substantially central portion of the second electrode, the source gas supplied into the reaction chamber from the nozzle is the first gas. Flows almost parallel to the second electrode surface and is discharged from the exhaust port. Therefore, a uniform source gas flow can be created between the first and second electrodes. In addition, since the nozzle is installed at a position further away from the electrode,
Because it is difficult to heat under the influence of plasma discharge,
A change in the composition of the source gas can be avoided. Therefore, by decomposing the raw material gas by plasma discharge, a uniform and high-quality oxide thin film can be formed over a large-sized substrate.

Further, even if particles are generated at the nozzle, the particles flow to the exhaust port together with the raw material gas, so that the particles do not fall on the substrate. Therefore, the yield can be improved, the productivity can be improved, and the production cost can be reduced.

According to the thin film manufacturing apparatus having the shower nozzle on the electrode opposite to the electrode on which the substrate is mounted, the gas is blown out from the shower nozzle 27 to suppress the reaction product from adhering to the electrode surface. be able to. For this reason, particles are prevented from falling onto the substrate from the electrode surface, so that the frequency of cleaning can be reduced.

According to the thin film manufacturing apparatus having the cooler on the electrode facing the electrode having the heater, the electrode is cooled by the cooler, so that the surface of the electrode facing the substrate is heated by the energy of the plasma discharge. Can be suppressed. Therefore, only a specific easily decomposable organic metal does not decompose on the electrode surface, so that the composition of the deposited film does not change, and a film having a desired composition can be formed. As a result, the composition of the film can be precisely controlled, and a high-quality film can be formed. Further, since particles hardly adhere to the surface of the electrode provided with the cooler, the particles do not directly fall on the substrate, and the yield can be improved.

According to the thin film manufacturing method of the present invention, the source gas is blown from the side between the first and second electrodes in a direction substantially parallel to the surfaces of the first and second electrodes, and Since the source gas is exhausted from a substantially central portion of the electrode or a substantially central portion of the second electrode, the source gas can flow substantially parallel to the first and second electrode surfaces. Therefore, a uniform source gas flow can be created between the first and second electrodes. Therefore, by decomposing the raw material gas by plasma discharge, a uniform and high-quality oxide thin film can be formed over a large-sized substrate.

Further, even if particles are generated in the source gas, the particles are exhausted together with the source gas, and the particles do not fall on the substrate. Therefore, the yield can be improved, the productivity can be improved, and the production cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a first embodiment of a thin film manufacturing apparatus according to the present invention.

FIG. 2 is a diagram illustrating an example of a nozzle of a thin film manufacturing apparatus;
(1) is a plan view, (2) is a left side view, (3) is a right side view, and (4) is a plane central longitudinal sectional view.

FIG. 3 is a schematic sectional view showing the arrangement of nozzles in a reaction chamber.

FIG. 4 is a schematic sectional view showing a second embodiment according to the thin film manufacturing apparatus of the present invention.

FIG. 5 is a schematic sectional view showing a third embodiment according to the thin film manufacturing apparatus of the present invention.

FIG. 6 is a schematic sectional view showing a fourth embodiment according to the thin film manufacturing apparatus of the present invention.

FIG. 7 is a schematic sectional view showing a fifth embodiment relating to the thin film manufacturing apparatus of the present invention.

FIG. 8 is a schematic sectional view showing a conventional thin film manufacturing apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... 1st thin film manufacturing apparatus, 11 ... reaction chamber, 12 ... nozzle, 21 ... 1st electrode, 22 ... 2nd electrode, 23 ... exhaust port

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Chiharu Isobe 6-35 Kita Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 4K030 AA11 AA16 BA01 BA04 BA18 BA42 BA46 BB12 CA04 CA12 DA03 EA06 EA11 FA03 GA06 HA04 JA03 KA05 KA18 KA22 KA23 KA25 LA01 5F045 AA04 AB31 AC03 AC05 AC07 AC11 AC14 AC15 AC16 AC17 AD06 AD07 AD08 AD09 AD10 DP04 EB06 EE02 EF03 EF05 EF20 EG02 EH14 EJ02 EK05 BF10 BF10 BF10 BF10 BF10 BF10 BF10 BG03 BH03

Claims (16)

[Claims] An apparatus for producing a thin film by generating a plasma discharge between a first electrode and a second electrode disposed opposite to each other inside a reaction chamber. A nozzle for providing a discharge port and discharging a raw material gas for forming the thin film in a direction substantially parallel to the opposed first electrode surface and the second electrode surface; An exhaust port formed at substantially the center of the electrode or substantially at the center of the second electrode to exhaust the gas in the reaction chamber. 2. The thin film manufacturing apparatus according to claim 1, wherein said nozzle is provided with a heating means for heating said nozzle. 3. The thin film manufacturing apparatus according to claim 1, wherein a heater is provided inside an electrode of the first electrode and the second electrode on which a substrate is installed. 4. The thin film manufacturing apparatus according to claim 3, wherein a cooler is provided inside the electrode facing the electrode provided with the heater. 5. A shower nozzle having a plurality of gas ejection holes formed on an electrode of the first electrode and the second electrode opposite to an electrode on which a substrate is provided. The thin film manufacturing apparatus according to the above. 6. A drive unit for rotating one of the first electrode and the second electrode, on which a substrate is provided, while keeping a constant electrode interval. Thin film manufacturing equipment. 7. An exhaust device connected to the reaction chamber via an exhaust pipe, and a conductance valve provided in the exhaust pipe between the reaction chamber and the exhaust device, wherein the conductance valve and the exhaust gas 2. The thin film manufacturing apparatus according to claim 1, further comprising a trap provided on the exhaust pipe between the apparatus and the apparatus to trap a reactive gas and an unreacted gas. 8. The thin film manufacturing apparatus according to claim 1, further comprising a vaporizer connected to a gas supply side of the nozzle via a pipe. 9. The thin-film manufacturing apparatus according to claim 8, further comprising heating means for the vaporizer and a pipe connecting the vaporizer and the nozzle. 10. An exhaust device connected via an exhaust pipe to a vaporizer for supplying a source gas for forming a thin film in the reaction chamber, and an exhaust device between the vaporizer and the exhaust device. The thin film manufacturing apparatus according to claim 1, further comprising a conductance valve provided. 11. A method for producing a thin film by generating a plasma discharge between a first electrode and a second electrode disposed in a state facing the inside of a reaction chamber, wherein the first Supplying a source gas for forming the thin film from a side between the electrode and the second electrode in a direction substantially parallel to the first electrode surface and the second electrode surface; A method of manufacturing the thin film, wherein the source gas is exhausted from a substantially central part of the first electrode or a substantially central part of the second electrode. 12. The method according to claim 11, wherein the raw material gas is supplied to the reaction chamber while being heated to a predetermined temperature. 13. The method of manufacturing a thin film according to claim 11, wherein an electrode of the first electrode and the second electrode on which a substrate is installed is heated. 14. The method according to claim 13, wherein an electrode facing the heated electrode is cooled. 15. The thin film manufacturing method according to claim 13, wherein a gas is blown from a plurality of positions of the first electrode and the second electrode facing the electrode on which the substrate is provided. 16. The method of manufacturing a thin film according to claim 11, wherein, of the first electrode and the second electrode, an electrode on which a substrate is installed is rotated while keeping a constant electrode interval.