JP2001024209A - Radiation imaging device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize high-speed reading-out by decreasing burden of resistor of a leading-out wire on a voltage loading means, and decreasing delay of signal voltage that controls a picture element, without leading to pulse delay in a large array. SOLUTION: A picture element is comprised of a reading-out TFT, a picture element electrode 3, a signal reading-out line (signal line) 5, a gate line (scanning line) 7, a ground line (auxiliary electrode) 9, an X-ray (light) charge conversion film 11, a common electrode 13 and a picture element capacity. A structure wherein a pair of driver ICs (voltage loading means) provided on left and right of a detecting array 17 drive the scanning line 7 is employed. Concretely, a contact pad 19 to an external driver IC is provided on left and right of the detecting array 17 to connect the scanning line 7 and the external driver IC provided outside of the detecting array 17 with the pad in between, thereby each scanning line 7 is driven.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a radiation imaging apparatus for a medical diagnostic apparatus using radiation such as X-rays and a repair method thereof.

[0002]

2. Description of the Related Art In recent years, in the medical field, there has been a demand for creating a database of medical data of patients for the purpose of performing treatment quickly and accurately. This is because patients generally use multiple medical institutions, and in such cases, data on individual patients, such as the results of treatment at other medical institutions and administered drugs, are exchanged between multiple medical institutions. This is because they need to be shared. As medical data, there is also a demand for a database of X-ray imaging image data, and digitization of X-ray imaging images is desired in order to secure data distribution and versatility.

[0003] Conventionally, in a medical X-ray diagnostic apparatus, imaging has been conventionally performed using a silver halide film. To digitize the image, it is necessary to develop the captured film and scan it again with a scanner or the like. Yes, it was troublesome and time consuming. Recently, a method of digitizing a linear image using a CCD camera of about 1 inch has been realized.

However, for example, when taking a picture of a lung,
Since an area of about 40 cm × 40 cm is photographed, an optical device for condensing light is required, and there is a problem in that the size of the device is increased.

As a method for solving the problems of these two methods, an X-ray imaging device using an a-Si-TFT (amorphous silicon thin film transistor) has been proposed. The configuration of this X-ray flat panel detector is shown in FIG. 9, and the operation will be described below.

In FIG. 1, images e1, 1 to e2000,
2000 denotes an a-Si-TFT 105 and a photoelectric conversion film 1
01 and a pixel capacitor (hereinafter, referred to as Cst) 103. These pixels e are arranged in an array in which hundreds to thousands of pixels are arranged on each side in the vertical and horizontal directions.
Make up an array.

[0007] A bias voltage is applied to the photoelectric conversion film 101 by a power supply 109. a-Si-TFT1
05 are signal lines S1, S2,... S2000 and scanning lines G
1, G2... G2000, and a-
ON / OFF of the Si-TFT 105 is controlled by a horizontal scanning shift register (scanning line driving circuit) 113.

The ends of the signal lines S1, S2,... S2000 are connected to a signal detection amplifier 115 via a changeover switch 107. Further, the changeover switch 10
7 is a vertical scanning shift register (signal line driving circuit) 11
1 is controlled. Further, these signal lines S1,
S2,..., S2000 are provided with an integrating amplifier 114 for receiving a signal read from a pixel.

When light is incident on the pixel e, a current flows through the photoelectric conversion film 101, and charges are accumulated in the Cst 103. When the scanning line is driven by the scanning line driving circuit 113 to turn on all the TFTs connected to one scanning line, the accumulated charges are transferred to the amplifier 114 through the signal line S1. Then, the changeover switch 107 inputs the electric charge for each pixel to the amplifier 114 and converts the electric charge into a dot-sequential signal that can be displayed on a CRT or the like. At this time, the amount of charge varies depending on the amount of light incident on the pixel, and the output amplitude of the amplifier 114 changes.

As described above, in the system shown in FIG.
By performing A / D conversion on the 14 output signals, a digital image can be directly obtained. Further, the pixel area in the figure is
It has a structure similar to that of a TFT-LCD (thin film transistor liquid crystal display) used for a notebook personal computer or the like, and a thin, large-screen one can technically be manufactured relatively easily.

[0011]

However, as described above, when the size of the detector is increased or the definition thereof is increased, the scanning line G is increased.
1, G2,..., G2000 resistance, and scanning lines G1, G
2,... The parasitic capacitance of G2000 increases, and a-S
There is a problem that a pulse is generated in turning on and off the gate of the i-TFT 105. Due to the delay of the Gate pulse, as shown in FIG. 10A, the readout time actually provided at the pixel on the opposite side (far from the horizontal scanning shift register 113) (for example, near the pixel e, 2000) There is a possibility that the time will be shorter.

More specifically, the reset timing of the above-described amplifier 114 is determined based on all signal lines S1, S2,.
Are performed at the same time, the delay of the Gate pulse may cause the amplifier 114 to be reset before the Gate is turned off. In this case, the actual read time is shortened, the afterimage increases, or as shown in FIG. 10B, one signal of a pixel far from the horizontal scanning shift register 113 (for example, a pixel e, a pixel near 2000) is output. Parts may be lost.

[0013] In particular, when high-speed reading is advanced, GateO
Since the N time becomes short and the problem of the pulse delay becomes remarkable, if the pulse delay is not eliminated, it becomes difficult to improve the readout speed, and the specifications required for the detector may not be secured. Occurs.

Therefore, the present invention has been made to solve the above-described problem, and reduces the load on the driver IC due to the resistance of the readout line, reduces the delay of the gate pulse described above, and is applicable to a large array. It is an object of the present invention to provide a radiation imaging apparatus capable of realizing high-speed reading without causing a pulse delay.

Another object of the present invention is to provide a manufacturing method capable of improving the yield when manufacturing the radiation imaging apparatus.

[0016]

DISCLOSURE OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and the invention according to the present application has a structure in which pixels that store incident radiation as signal charges are arranged in a matrix two-dimensional matrix. In a radiation imaging apparatus provided with a detection array in which a scanning line for controlling reading of the signal charge is connected to the pixels in each row, the reading of the pixels is controlled at both ends of the scanning lines in each row. And a gate driver for applying a voltage of the same.

According to the present invention, by providing the gate drivers at both ends of the scanning line of each row, the resistance and capacitance borne by both drivers can be reduced, the delay of the gate pulse can be reduced by half, and the array can be reduced. Even when the size is increased, even if high-speed reading is performed, the influence of the pulse delay can be reduced.

According to another aspect of the present invention, there is provided a radiation imaging apparatus including a detection array in which pixels for accumulating incident radiation as electric charges are arranged in a two-dimensional matrix. Is a method for repairing the radiation imaging apparatus in the case where the wirings arranged in the vertical direction are in contact with each other between different layers, wherein the wiring of one layer is cut off on both sides of the contact point, Is operated, a voltage load means for applying a required voltage to both ends of the cut one layer wiring is connected.

According to such another invention, when the wirings arranged in the upper and lower layers come into contact with each other, the wiring having the defect can be repaired by cutting both sides of the contact portion. When driving the radiation imaging apparatus,
By applying a necessary voltage to the disconnected wiring, the function of the defective wiring can be maintained. As a result, pattern defects that tend to occur when the panel size is increased or when the pattern density is increased can be handled as good products without line defects even if repaired by laser or the like. X-ray detectors can be produced with high yield.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment (Overall Configuration of Radiation Imaging Apparatus) Hereinafter, preferred embodiments of a radiation diagnostic apparatus according to the present invention will be described in detail with reference to the drawings. FIG. 1 shows a schematic configuration of a pixel e provided in the radiation imaging apparatus according to the present embodiment. FIG. 2 shows a radiation imaging apparatus provided with a detection array configured by arranging the pixels e in an array. FIG. 2 is a schematic configuration diagram showing the entire configuration of the first embodiment.

As shown in FIGS. 1 and 2, the pixel e includes a readout TFT 1, a pixel electrode 3, a signal readout line (signal line) 5, a gate line (scanning line) 7, and a ground line (auxiliary line). (Electrode) 9, an X-ray (light) charge conversion film 11, a common electrode 13, and a pixel capacitor Cst15. In FIG. 1, the X-ray (light) charge conversion film 11 and the common electrode 13 (to which a voltage is supplied) are omitted. The pixels e are arranged in an array as shown in FIG.

As the X-ray (light) charge conversion film 11, a-Se or a-Si can be used. Further, the pixel capacitance Cst15 is composed of the pixel electrode 3 and the auxiliary electrode 9, and the X-ray enters by X-ray incidence.
The charge generated by the line (light) charge conversion film 11 is accumulated.

The radiation imaging apparatus according to the present embodiment has a structure in which the scanning lines 7 can be driven by a pair of driver ICs (voltage load means) provided on the left and right sides of the detection array 17. Specifically, contact pads 1 with the external driver IC are provided on the left and right of the detection array 17.
The scanning line 7 is connected to an external driver IC provided outside the detection array 17 via the scanning line 9, thereby driving each scanning line 7. The driver IC
May be mounted on the detection array 17. In this case, such a pair of driver ICs can be formed at the same time when the imaging region is formed.

In the radiation imaging apparatus according to the present embodiment,
The voltage to the auxiliary electrode line 9 is also supplied from power supply side lines 23 provided on the left and right of the detection array 17. More specifically, both ends of the auxiliary electrode line 9 are connected to a pair of power supply side lines 23, and contact pads 21 are provided on both upper and lower or left and right ends of the pair of power supply side lines 23. In this case, since the auxiliary electrode line 9 is set to the ground potential, the ground of any circuit system can be strengthened. Therefore, it is preferable that the voltage can be supplied from any part.

(Operation of Radiation Imaging Apparatus) The pixel e in the radiation imaging apparatus of the present embodiment having the above configuration operates as follows. That is, the charge generated in the X-ray (light) charge conversion film 11 by the incidence of X-rays
It is stored in st15. Then, by applying a signal voltage from both sides of the scanning line 7 through the pair of contact pads 19 to control the scanning line 7, each TFT 1 of the pixel e on the scanning line 7 is turned on, e stored in the contact pad 22 via the signal line 5.
Pour into

The charge that has flowed out is transferred to an amplifier (not shown). Thereafter, the amplified signal is subjected to signal processing by an A / D converter or the like. An X-ray image can be obtained by sequentially performing this scanning on all the scanning lines.

According to the radiation imaging apparatus of this embodiment having such an operation, by applying a signal voltage from both ends of the scanning line 7 of each row to the driver IC, the distance from the driver IC to each pixel e is increased. Can be shortened, and the resistance and capacity borne by both drivers can be reduced.
The delay of the te pulse can be halved, and even if the detection array is enlarged or high-speed reading is performed, the influence of the pulse delay can be reduced.

(Repair method) In the radiation imaging apparatus according to the present embodiment described above, the wirings arranged in layers over a plurality of layers on the detection array contact each other in different layers in the vertical direction to cause a short circuit. In this case, repair can be performed by the following method. FIG. 3A is an enlarged view showing such a contact portion, and FIG.
It is an enlarged view showing the sectional view of AA in (a).

For example, as shown in FIG. 3, a pin pole is generated in an insulating film layer formed between the signal line 5 and the scanning line 7 so that the signal line 5 and the scanning line 7 come into contact with each other and a short circuit occurs. When it is found that the scanning line 7 is generated, the scanning line 7 is cut on both sides C1 and C2 of the contact portion with the signal line 5 by a laser or the like.

As a result, since the scanning line 7 is conventionally supplied with one-sided voltage in the related art, the driving voltage is not supplied to the side opposite to the driver after the scanning line 7 is cut off.
Although a line defect occurs, in this embodiment, since the voltage is supplied from both sides of the scanning line 7 via the pair of contact pads 19, even if the scanning line 7 is cut at both sides C1 and C2 of the contact location. There is no line defect.

Incidentally, even when the signal line 5 and the auxiliary electrode line 9 are short-circuited, repair can be performed by the same method. Further, in this embodiment, the auxiliary electrode line 9 is provided in parallel with the scanning line 7, but the auxiliary electrode line 9 is provided in parallel with the signal line 5, and the auxiliary electrode line 9 and the scanning line 7 are orthogonal. In such a case, the same repair method as described above can be used.

As described above, in the X-ray imaging apparatus, by supplying a voltage to the scanning lines 7 and the auxiliary electrode lines 9 from both sides of the imaging region, even if the intersecting wirings are short-circuited, the X-ray imaging apparatus can be used. It can be performed without generating defects. Therefore, it is possible to prevent a decrease in yield caused by an increase in the size of the detection array 17 or an increase in the pattern density, and it is possible to efficiently manufacture a radiation imaging apparatus.

(Modification) The radiation imaging apparatus described above can be modified as follows. That is, in the above-described radiation imaging apparatus, a pair of contact pads 19 is provided on both sides of one continuous scanning line 7 and the like, and these external driver ICs are connected. Between the pads 19,
The scanning lines 7 and the like are divided.

According to this modification, the length of the scanning line 7 with respect to each external driver IC can be reduced by cutting and dividing the scanning line 7 halfway, so that each external driver IC Burden can be reduced. In the above-described radiation imaging apparatus, it is necessary to completely synchronize the operation of the pair of external driver ICs connected to both ends of the continuous scanning line 7. According to this modification, the operation of the pair of external driver ICs is required. Can be tolerated even if some deviation occurs. The scanning line 7
Is divided, the above-described repair method cannot be used.

[Second Embodiment] (Overall Structure of Radiation Imaging Apparatus) Hereinafter, a second embodiment of the radiation imaging apparatus according to the present invention will be described. FIG.
Shows a schematic configuration of a pixel e provided in the radiation imaging apparatus according to the present embodiment, and FIG. 5 is a schematic configuration diagram showing an overall configuration of the radiation imaging apparatus according to the present embodiment.

As shown in FIGS. 4 and 5, the radiation imaging apparatus according to this embodiment is characterized in that a high voltage protection circuit 115 is provided in addition to the configuration of the detection array 17 according to the first embodiment. And That is, the pixel e includes the readout TFT 1, the pixel electrode 3, and the signal readout line (signal line).
5, a gate line (scanning line) 7, an auxiliary electrode 9, an X-ray (light) charge conversion film 11, a common electrode 13, and a pixel capacitor C
st15 and a high-voltage protection circuit 115. 4 and 5, the X-ray (light) charge converter 11 and the common electrode 13 are omitted.

The high voltage protection circuit 115 mainly comprises a protection diode 25 and a power supply line 27 for the protection diode. FIGS. 6A and 6B are explanatory diagrams showing a schematic configuration and operation of the high-voltage protection circuit 115. FIG.

As shown in FIGS. 7A and 7B, when X-rays enter the pixel 11 excessively, charges generated as much as necessary are accumulated in Cst15, and the remaining charges (FIG. The portion indicated by oblique lines in FIG. 2B is a Cst 15 or a TFT 1 provided as a pixel switch so as to emit from the protection diode 25 provided in each pixel to the outside of the pixel through the protection diode power supply line 27. Prevents dielectric breakdown.

Also in this embodiment, a pair of external drivers are connected to both ends of the scanning line 7. That is, a driver IC is provided outside the detection array 17.
Are provided, and contact pads 19 with external ICs are provided on the left and right or upper and lower sides of the detection array 17, and the driving of the scanning lines 7 is controlled by connecting these external driver ICs and the contact pads 19.

Further, in the present embodiment, the voltage supply to the auxiliary electrode lines 9 is also performed by using one or several auxiliary electrode lines 9 provided in each row on the left and right or up and down of the detection array 17. Therefore, contact pads 21 are provided on the left and right or up and down of the imaging area.

The power supply to the protection diode power supply line 27 is also performed by using one or several protection diode power supply lines 27 provided in each row on the left, right, upper and lower sides of the imaging region 17. From the line side 29, contact pads 31 are provided on the left and right or up and down of the imaging area.

(Operation of Radiation Imaging Apparatus) The operation of the radiation imaging apparatus according to this embodiment having the above configuration will be described below.

The X-ray (light) charge conversion film 11 accumulates electric charges in Cst 15 generated by the incidence of the X-ray (light),
When the voltage reaches a certain level that does not cause the dielectric breakdown of the TFT 1, the electric charge flows out of the pixel e from the protection diode 25, so that a high voltage is not applied to the reading TFT 1 and Cst 15. The charge outflow path at this time is the power supply line 27 for the diode, and the voltage at which the charge starts to flow out of the protection diode 25 can be changed by setting the potential of the power supply line 27.

By controlling the scanning line 7 by a pair of external driver ICs, each TFT 1 of the pixel on the scanning line 7 is turned on, and the electric charge accumulated in Cst 15 flows to the signal line 5. The discharged electric charges are transferred to an amplifier (not shown), and the signal amplified by the amplifier is subjected to signal processing by an A / D or the like. An X-ray image can be obtained by sequentially performing this scanning on all the scanning lines.

(Repair Method) In the radiation imaging apparatus according to the present embodiment described above, when the wirings arranged in layers over a plurality of layers on the detection array 17 are in vertical contact between different layers, The repair can be performed by cutting the wiring of one layer on both sides of the contact point.

For example, as shown in FIG. 3, when it is found that the signal line 5 and the scanning line 7 arranged in different layers are short-circuited, the scanning line 7 is connected to a laser or the like on both sides of the contact point. Cut by In the radiation imaging apparatus according to the present embodiment, since the voltage is supplied from both sides, the scanning line 7
Is not a line defect even if it is cut. The same applies to the short circuit between the signal line 5 and the auxiliary electrode line 9 and the signal line 5 and the power line 27 for the protection diode.

In this embodiment, the auxiliary electrode line 9 and the power supply line 27 for the protection diode are provided in parallel with the scanning line 7, but each of the signal lines 5 or one of them is provided in parallel with the signal line 5. Even in this case, the same repair method as described above can be adopted. In this case, a short circuit between the scanning line 7 and the auxiliary electrode line 9, a short circuit between the scanning line 7 and the protection diode power line 27, and a short circuit between the auxiliary electrode line 9 and the protection diode power line 27 are applicable.

As described above, in the radiation imaging apparatus, the scanning lines 7
By applying a voltage from both ends to the power supply line 9 and the auxiliary electrode line 9 and the power supply line 27 for the protection diode, even if the intersecting wirings are short-circuited, repair without generating line defects. Therefore, even when the size of the detection array is increased or the pattern density is increased, it is possible to efficiently manufacture the detection array without lowering the yield.

(Modification) The radiation imaging apparatus according to the second embodiment can be modified as follows. That is, in the above-described radiation imaging apparatus,
A pair of contact pads 19 are provided on both sides of one continuous scanning line 7 and the like, and these external driver ICs are connected. In this modified example, the scanning lines 7 and the like are provided between the pair of contact pads 19. Split.

According to the present modification, the length of the scanning line 7 with respect to each external driver IC can be reduced by cutting and dividing the scanning line 7 halfway. Burden can be reduced. In the above-described radiation imaging apparatus, it is necessary to completely synchronize the operations of a pair of external drivers connected to both ends of the continuous scanning line 7. According to this modification,
A slight deviation between the pair of external driver operations can be tolerated. When the scanning line 7 is cut off halfway, the above-described repair method cannot be performed.

[Third Embodiment] The third embodiment of the present invention will be described below.
The function of the embodiment will be described. Note that this embodiment is an application example of the repair method of the radiation imaging apparatus according to the first and second embodiments described above.

(Application Example 1) In the radiation imaging apparatus according to each of the above-described embodiments, the upper layer 2
When a laser is used when the wires are in contact with each other, a leak path is generated in a vertical direction.

In other words, since the above-described laser repair burns off the upper wiring, if the metal layers overlap in the vertical direction of the layer structure, the burned-up upper wiring is pushed into the lower layer through the cut portion. As a result, it comes into contact with the underlying wiring. Therefore, in such a case,
A leak path occurs in the vertical direction, and it does not mean complete repair. FIG. 7 is an enlarged view of a portion indicated by a dotted line B in FIG.

As shown in FIG. 7, two wirings in the upper layer (the signal line 5 and the wiring 125 for the protection diode 25) are provided above the lower wiring (for example, the power supply line 27 for the protection diode).
When the contact is made, even if the contact point between the signal line 5 and the wiring 125 is cut (in the figure), a leak path is formed in the lower layer, so that the signal line 5 and the lower protection diode power supply line 27 are formed.
Will come into contact with each other to cause a short circuit.

Therefore, in such a place,
After the laser repair of the above-mentioned position, the lower-layer protection diode power supply line 27 is also cut at a position opposite to the position across the signal line 5. At this time, the portion and the signal line 5 are still short-circuited, but since the portion with the protection diode power supply line 27 is disconnected, the repair is completed.

According to the first application example as well, since the voltage is supplied to the protection diode power supply line 27 from both ends, no line defect occurs even if the line is broken at the point. The function of the detection array can be restored, and the yield in manufacturing the radiation imaging apparatus can be improved.

(Application Example 2) The following repair method can be performed by applying the properties of the laser repair described in Application Example 1. FIG. 8A is an enlarged view of a portion indicated by a dotted line C in FIG. 4, and FIGS. 8B and 8C are explanatory diagrams of the repair method.

As shown in FIGS. 8A and 8B, for example, the formation of the contact hole 33a is incomplete, and the gate electrode 33 of the protection diode 25 and the source electrode 35 of the pixel electrode 3 are electrically connected. Otherwise, the potential of the gate electrode 33 of the protection diode 25 is in a floating state, so that the protection diode 25 may not operate normally.

In this case, even if the pixel becomes high potential,
Since the protection diode 25 does not operate, the read TF
A high voltage is applied to T1 and the like, which may cause dielectric breakdown. Therefore, the detection array is determined to be defective, and as a result, the yield is reduced.

Therefore, in this application example, the source electrode 35 and the drain electrode 37 in the upper layer are burned off together with the gate electrode 33 in the lower layer, thereby bringing the gate electrode 33 into contact with the lower drain electrode or the source electrode. To form a low resistance component.

More specifically, as shown in FIG. 8A, a portion 35a between the source electrode 35 and the drain electrode 37 arranged above and in contact with each other above the gate electrode 33 is formed.
And 37a are cut by burning off with a laser or the like.

Since the cuts formed in these portions 35a and 37a are formed over the lower gate electrode 33, the upper source electrode 35 and the drain electrode 37 are pushed into the cuts by the laser, and the lower layer is formed. It comes into contact with the gate electrode 33. These contact points
As a result, the source electrode 35 and the drain electrode 37 are short-circuited via these low-resistance components (portions 35a and 37a), as shown in FIG. .

That is, a laser leak path (portions 35a and 35a) is formed between the source electrode 35 and the drain electrode 37 including the gate electrode 33 of the protection diode 25, respectively.
7a), and the source electrode 35 and the drain electrode 37 are short-circuited by their leak paths. As a result, almost all of the electric charge accumulated in the pixel flows out to the protection diode power supply line 27 through the short-circuited protection diode 25, so that the pixel becomes a point defect, but the point defect occurs continuously. If not, the detection array is not treated as a defective product, so that the yield can be prevented from lowering.

As described above, in the radiation imaging apparatus, by using the interlayer short circuit generated by the laser repair to change the inactive protection diode 25 and the like to a low resistance component, the array can be manufactured without lowering the yield. can do.

[0065]

As described above, according to the radiation imaging apparatus of the present invention, the load on the voltage load means due to the resistance of the readout line is reduced, the delay of the signal voltage for controlling the pixels is reduced, and the large-sized array can be used. Thus, high-speed reading can be realized without causing a pulse delay.

Further, according to the method for repairing a radiation imaging apparatus of the present invention, it is possible to prevent a decrease in yield that occurs when a larger, higher-definition radiation imaging apparatus is manufactured, which is effective in terms of cost. .

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a pixel in a radiation imaging apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a detection array in the radiation imaging apparatus according to the first embodiment of the present invention.

FIG. 3 is an explanatory diagram showing a short-circuit state between a signal line 5 and a scanning line 7 and a repair method thereof in the radiation imaging apparatus according to the first embodiment of the present invention.

FIG. 4 is a schematic configuration diagram of a pixel in a radiation imaging apparatus according to a second embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a detection array in a radiation imaging apparatus according to a second embodiment of the present invention.

FIG. 6 is an explanatory diagram of a high-voltage protection circuit in a radiation imaging apparatus according to a second embodiment of the present invention.

FIG. 7 is an explanatory diagram showing a protection diode repair method as a first application example of the repair method of the present invention.

FIG. 8 is an explanatory view showing a protection diode repair method as a second applied example of the repair method of the present invention.

FIG. 9 is a schematic configuration diagram of a detection array in a conventional radiation imaging apparatus.

FIG. 10 is an explanatory diagram showing a delay of a signal voltage in a detection array in a conventional radiation imaging apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... (readout) TFT, 3 ... pixel electrode, 5 ... signal readout line (signal line) 7 ... gate line (scanning line), 9 ... auxiliary electrode line, 11 ... X-ray (photo) electric conversion film 13 ... common Electrodes, 15: Pixel capacitance (Cst), 17: Detection array 19: Contact pad (for scanning line), 21: Compact pad (for auxiliary electrode line) 21: Compact pad (for signal readout line), 23 ...
Power supply side line 25: Protection diode, 27: Power supply line for protection diode 29: Power supply side line for protection diode, 31: Contact pad (for power supply line), 33: Gate for protection diode, 3
5 Source for protection diode, 37 Drain for protection diode, 101 Photoelectric conversion film, 103 Photoelectric conversion film
Capacitance between pixel electrodes, 105 TFT, 107 switch, 109 power supply, 111 signal readout circuit, 1
13: scanning line drive circuit, 114: amplifier, 115: high voltage protection circuit, e: pixel

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsushi Ikeda 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Center (72) Inventor Masami Atsuta 33 shares in Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Inside Toshiba Production Technology Center (72) Inventor Akira Kanno 33 Shin Isogocho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Center (72) Inventor Kohei Suzuki 33 shares, Shinisogo-cho, Isogo-ku, Yokohama, Kanagawa F-term in Toshiba Production Technology Center (reference) 4M118 AA08 AA10 AB01 BA05 BA14 CA02 CB05 CB06 FB09 FB13 FB16 FB30 GA10 HA22 HA30 5C024 AA11 CA25 CA31 GA04 HA14 HA20 5F088 AA09 BB03 BB07 LA07

Claims (5)

[Claims] 1. A detection array comprising pixels that accumulate incident radiation as signal charges arranged in a matrix two-dimensional matrix, and a scanning line for controlling reading of the signal charges is connected to the pixels in each row. In the radiation imaging apparatus, a voltage load unit that loads a voltage for controlling reading of the pixels is connected to both ends of the scanning line in each row. 2. A detection array in which pixels for storing incident radiation as signal charges are arranged in a matrix two-dimensional matrix, and a scanning line for controlling reading of the signal charges is connected to the pixels in each row. In the radiation imaging apparatus, a pair of voltage load units that load a voltage for controlling the readout of the pixels are connected to both ends of the scan line of each row, and the scan line is divided between the pair of voltage load units. A radiation imaging apparatus, comprising: 3. A radiation imaging apparatus having a detection array in which pixels that store incident radiation as electric charges are arranged in a two-dimensional matrix, a wiring arranged in layers over a plurality of layers on the detection array. A method of repairing the radiation imaging apparatus in a case where the radiation imaging apparatuses are vertically contacted between different layers, wherein the wiring of one layer is cut on both sides of the contact point, and when the radiation imaging apparatus is operated. Is a method for repairing a radiation imaging apparatus, comprising connecting voltage load means for applying a required voltage to both ends of the cut one layer wiring. 4. In a radiation imaging apparatus having a detection array in which pixels that store incident radiation as electric charges are arranged in a two-dimensional matrix, two upper wirings are in contact with each other above a lower wiring. The method for repairing the radiation imaging apparatus in the case where the contact point is burned off together with a lower layer below the contact point, and the two wires in the upper layer and the wires burned out in the lower layer are vertically Direction, and cut the lower wiring on the side opposite to the cut point, sandwiching the points contacted above and below, when operating the radiation imaging apparatus, the both ends of the cut lower layer wiring A method for repairing a radiation imaging apparatus, comprising connecting voltage load means for applying a required voltage to the radiation imaging apparatus. 5. A radiation imaging apparatus having a detection array in which pixels that store incident radiation as electric charges are arranged in a two-dimensional matrix, wherein an upper source electrode or a drain electrode and a lower gate electrode are formed. A method for repairing the radiation imaging apparatus in the case where the radiation imaging apparatus is not connected, wherein the upper layer source electrode and the drain electrode are burned off together with the lower layer gate electrode to make contact with the lower layer gate electrode. Repair method.