JP2000340723A - Semiconductor switching device and power conversion device using the semiconductor switching device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent as much as possible the performance of a semiconductor switching device from being deterioration. SOLUTION: A semiconductor switching device has an insulating board 2, a semiconductor chip 1 which is mounted on the main surface of the board 2 and is formed with a switching element, a closure diode 9 which is provided on the main surface of the board 2 and is connected in reverse parallel with the switching element to the switching element, N-type and P-type semiconductor parts 6a and 6b and a conductor part 5b to connect the N-type semiconductor part with the P-type semiconductor part, and the semiconductor switching device is provided with a Peltier element part 4, constituted into a structure such that the conductor part 5b comes into contact with the rear of the board 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor switch device and a power conversion device using the semiconductor switch device.

[0002]

2. Description of the Related Art In recent years, power conversion devices, particularly inverter devices, have been used in various fields such as elevators, vehicles, steel, uninterruptible power supplies (UPS), etc. as industrial motor drive devices. It is conceivable that it will increase significantly. Further, in order to respond to the demands of customers, the performance of the inverter device itself has been greatly improved, and there has been a remarkable movement to differentiate by reducing noise, downsizing, and the like. In order to improve these performances, the semiconductor switch device itself used in the inverter device is also required to have higher performance such as high-speed switching and lower power loss. IGBT (In) is used as a switching element of the semiconductor switch device.
With the advent of sulated gate bipolar transistors), high-speed switching and low power loss have been realized. However, in order to reduce noise, the switching frequency in PWM control must be increased.
Due to the increase in the switching loss, it is necessary to improve the power loss. In particular, since the frequency at the start of the motor is low and the torque at the time of acceleration is large, the ability to output low frequency and large current is required as the inverter device. It is in a situation where the rated capacity is lowered so that it can withstand the above conditions.

FIG. 15 shows the configuration of a conventional semiconductor switch device constituting an inverter device. This conventional semiconductor switch device includes an IGBT chip 1, a reflux diode 9 connected in anti-parallel to the IGBT chip 1, an insulating substrate 2 on which the IGBT chip 1 and the reflux diode 9 are mounted, and an insulating substrate 2 on which a heat radiating plate 7 made of, for example, copper is placed. Therefore, the IGBT chip 1 and the freewheeling diode 9 are composed of the heat sink 7 and the insulating substrate 2.
It is configured to be insulated by.

[0004] The IGBT chip 1 is composed of a plurality of IGBTs 21 connected in parallel as shown in FIG. 16, and supplies a current to a main circuit via terminals C and E. And this I
GBT chip 1, freewheeling diode 9, and insulating substrate 2
Is usually resin-sealed by a mold resin 12. Terminals 23 are provided on the surface of the molded semiconductor switch device.
Are provided, and the terminal 23 and the IGBT chip 1 are connected by the wiring 22. The heat generated from the IGBT chip 1 is radiated by the radiating fins 15 via the radiating plate 7, and the cooling fan 13 allows the wind to flow into the radiating fins 15 to improve the heat radiation efficiency.

[0005]

FIG. 17 shows a problem when the inverter device outputs a low frequency large current.
This will be described with reference to (a), (b), and (c). FIG.
(A), (b), and (c) show the motor speed, the inverter current, and the temperature of the IGBT chip 1 from the start to the stop of the operation of the AC motor. Here, when the motor accelerates (section t1 in FIG. 17A), VVVF (Variable Vol.
stage Variable Frequency) control, the motor speed is 0
Hz and shifts to the rated speed (t2 section).

When accelerating, the motor is connected to a penetrating system as a load, so that the current during acceleration naturally becomes larger than the current after reaching the rated speed. On the other hand, a semiconductor switching device that performs switching and a relationship between heat generated by the semiconductor switching device and heat radiation will be described with reference to FIG.

[0007] In FIG. 15, a loss due to the switching, such as the main circuit current flowing by the switching of the IGBT chip 1, and an on-loss due to the continuation of the on-state occur. Rises. This heat is transferred to the heat sink 7 through the junction of the IGBT chip 1 and the insulating substrate 2 by the heat resistance R.
_th (ic). Further, the heat arriving at the heat radiating plate 7 is further transmitted to the heat radiating fins 15 with a thermal resistance of R _th ( _cf ). Further, the heat reaching the radiating fins 15 is cooled by the air from the cooling fan 13 to reach the outside air at R _th (f−
Cooling is achieved by transmission with the thermal resistance of a). Therefore, the junction temperature rise Tj of the IGBT chip 1 during the continuous inverter operation is represented by the following equation, where Q is the heat loss of the IGBT chip 1.

Tj = ｛R _th (ic) + R _th ( _cf )
+ R _th ( _fa )｝ Q Here, the transient thermal time constant of the radiating fin 15 is usually 100 times or more larger than the transient thermal time constant of the IGBT chip 1, and the cooling capacity can be reduced by the average loss of the inverter operation. Can be represented. However, the transient thermal time constant is extremely fast with respect to the loss of the IGBT chip 1, and the chip temperature rise due to the transient thermal time constant of the IGBT chip 1 cannot be ignored at a low frequency during the operation of the inverter.

FIG. 18 shows a transient thermal time constant for the junction of the IGBT chip 1 in the inverter.
If R _thM (ic) is the thermal resistance between the junction and the heat radiating plate 7 during continuous conduction, R
_Although the time constant (at which point reaches 63%) up to _thM (ic) varies depending on the semiconductor switch device, it is approximately 0.03-0.
It is about one second (0.1 seconds in FIG. 10). Therefore, assuming that the section T1 in which the inverter is passing the low-frequency current is about 1 second, the time when the transient thermal time constant reaches 63% is 10 times the time constant.
In the t4 section (see FIG. 17B), the thermal resistance R _thM (ic) between the junction and the heat radiating plate has been reached, and this section is the same as that in which the direct current continues to flow. As can be seen from the waveform of the rise in junction temperature in FIG. 17C, it can be seen that the temperature rises to a considerably high temperature. As described above, the higher the junction temperature rise in the low-frequency conduction region t4, the lower the rating of the output current of the inverter device. As described above, if the switching frequency is increased in order to reduce the noise, the switching loss increases, and as a result, the junction temperature rise in the t4 region further increases.
If the switching frequency is increased at the expense of the temperature increase, it is necessary to decrease the temperature Tf of the radiation fin 15 shown in FIG. In order to reduce the Tf, it is necessary to reduce the rated current, increase the size of the radiation fins 15, increase the air flow of the cooling fan 13, and the like, which has the problem of increasing the cost.

The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor switch device capable of suppressing a decrease in performance and a power conversion device using the semiconductor switch device. .

[0011]

A semiconductor switch device according to the present invention comprises: an insulating substrate; a semiconductor chip mounted on a main surface of the insulating substrate and having a switching element formed thereon;
A reflux diode provided on the main surface of the insulating substrate and connected in anti-parallel with the switching element; and connects the N-type semiconductor part and the P-type semiconductor part, and the N-type semiconductor part and the P-type semiconductor part. And a Peltier element configured so that the conductor contacts the back surface of the insulating substrate.

Each of the Peltier element sections has an N-type semiconductor section, a P-type semiconductor section, and a first conductor section connecting one end of the N-type semiconductor section to one end of the P-type semiconductor section. , At least one set of first to n-th (n ≧ 2) Peltier elements configured such that the first conductor portion is in contact with the back surface of the insulating substrate, and the i-th (i = 1,... N) −
The other end of the P-type semiconductor portion of the Peltier element of 1) is the i +
The other Peltier element may be connected to the other end of the N-type semiconductor portion by a second conductor portion, and the second conductor portion may be configured to be in contact with an insulating plate provided on a heat sink.

[0013] The Peltier device may be arranged directly below the semiconductor chip.

[0014] The Peltier device may be arranged so as to extend directly below the free-wheeling diode.

The semiconductor chip has a plurality of switching elements connected in parallel, and the Peltier element is configured to be connected in series with one of the plurality of switching elements. Is also good.

The i-th (i = 1,..., N) Peltier element has one end in contact with the insulating plate via a conductor between the N-type semiconductor part and the P-type semiconductor part. An i-th semiconductor piece whose end is in the air is provided, and the i-th (i = 1,..., N-1) semiconductor piece and the (i + 1) -th semiconductor piece have different conductivity types, and The first to n-th semiconductor pieces may be connected in series to form a series circuit, and the terminals of the series circuit may be configured to be led out.

A second heat sink having holes through which the respective semiconductor portions of the first to n-th Peltier elements penetrate is provided between the insulating substrate and the heat sink together with the heat sink. You may provide so that a body may be comprised.

Further, the semiconductor switch device according to the present invention comprises:
An insulating substrate, a semiconductor chip mounted on the surface of the insulating substrate and having a switching element formed thereon, and a free-wheeling diode provided on the surface of the insulating substrate and connected in anti-parallel with the switching element; Each has an N-type semiconductor portion, a P-type semiconductor portion, and a first conductor portion connecting one end of the N-type semiconductor portion and one end of the P-type semiconductor portion, wherein the first conductor portion is A Peltier element unit having at least one set of first to n-th (n ≧ 2) Peltier elements configured to penetrate the insulating substrate and to be positioned inside the semiconductor chip; (I = 1 ... n
-1) The other end of the P-type semiconductor portion of the Peltier element is
The other end of the N-type semiconductor portion of the +1 Peltier element is connected to a second conductor portion, and the second conductor portion is configured to be in contact with an insulating plate provided on a heat sink. Features.

Further, the power converter according to the present invention may include an inverter device including a plurality of switching devices, and each switching device may be any one of the above-described semiconductor switch devices.

It is to be noted that a converter device including a plurality of switching devices may be provided, and each switching device may be configured to be any of the above-described semiconductor switch devices.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 shows the configuration of a first embodiment of a semiconductor switch device according to the present invention.
Shown in The semiconductor switch device according to the first embodiment includes an IGBT chip 1 on which an IGBT is formed, an insulating substrate 2, an insulating plate 3, a Peltier element 4, a heat sink 7,
A free-wheeling diode 9.

The freewheeling diode 9 is connected in anti-parallel with the IGBT chip 1 and, together with the IGBT chip 1, the insulating substrate 2
Formed on top. The insulating plate 3 is provided on the heat sink 7.
The insulating substrate 2 and the insulating plate 3 are arranged so as to face each other. The Peltier device 4 is provided between the insulating substrate 2 and the insulating plate 3.

The Peltier element 4 is composed of conductors 5a, 5
b, 5c, an N-type semiconductor portion 6a, and a P-type semiconductor portion 6b. The conductors 5a and 5c are provided so as to be in contact with the insulating plate 3, and the conductor 5b is provided so as to be in contact with the back surface of the insulating substrate 2 opposite to the main surface on which the IGBT chip 1 is provided. One end of the N-type semiconductor portion 6a is connected to the conductor 5a.
And the other end thereof is provided so as to be in contact with the conductor 5b. Also, one end of the P-type semiconductor portion 6b contacts the conductor 5b,
The other end is provided so as to be in contact with the conductor 5c.

Therefore, the N-type semiconductor portion 6a and the P-type semiconductor portion 6b are connected in series, and the conductor 5b serves as a bonding surface. The conductor 5a is connected to the anode of the DC power supply 8, and the conductor 5c is connected to the cathode of the DC power supply 8.

Next, the operation of the semiconductor switch device of this embodiment will be described. First, the operation of the Peltier device used in the semiconductor switch device of the present embodiment will be described with reference to FIG.

As shown in FIG. 2, the N-type semiconductor portions 6a, 6a
When c is connected to the P-type semiconductor portion 6b and a current is supplied by the DC power supply 8, heat other than Joule heat is generated and heat is absorbed at the joint surface. This is called the Peltier effect. The amount of heat generated at the joining surface is equal to the amount of heat absorbed at the other joining surface, and the amount of heat Q is proportional to the current I, and is represented by Q = π · I. π
Is called a Peltier coefficient. The Peltier coefficient π _NP relating to the amount of heat Q _X = Q _NP generated (absorbed) at the junction surface between the N-type semiconductor portion and the P-type semiconductor portion is π _NP = α _NP · T α _NP = α _N −α _P. Here, T = absolute temperature, and α _N and α _P are absolute Seebeck coefficients (absolute thermoelectromotive currents) of the N-type semiconductor and P semiconductor portions. N-type semiconductor section 6a,
Α _N of 6c is α _N <0, and α _P of P-type semiconductor portion 6b is α _P
Due to the characteristic of> 0, when the current I is applied, α _NP <0, that is, π _NP <0, at the bonding surface X, and the heat generation amount becomes endothermic. On the other hand, at the joint surface Y, α _PN > 0, and the same amount of heat is generated. If the current is reversed, heat is absorbed and generated in the opposite direction.

Returning to FIG. 1, the majority carriers of the N-type semiconductor portion 6a are constituted by electrons 18, and when a voltage is applied, the electrons 18 move toward the anode. On the other hand, in the P-type semiconductor portion 6b, majority carriers are constituted by holes 19, and when a voltage is applied, the holes 19 move toward the cathode. As described above, when electrons flow from the conductor 5b to the conductor 5a, the state shifts from a low energy state to a high energy state, and the energy is absorbed by the electrons in the form of heat. The upper side, that is, the conductor 5b becomes a cold junction, and the opposite side, that is, the conductor 5a becomes a hot junction, and heat absorption and heat generation are branched off at the joint surface and come out.

As described above, in the present embodiment, since the conductor 5b of the Peltier element 4 becomes a cold junction, the IGBT chip 1 is cooled via the insulating substrate 2 and the temperature of the junction of the IGBT chip 1 is reduced. It is possible to suppress the rise. That is, if the current flowing from the DC power supply 8 to the Peltier element 4 is I, the IGBT chip 1 is cooled by the amount of heat Q = π · I, and the temperature rise of the IGBT chip 1 during operation of the inverter device is suppressed. Can be. Thus, it is not necessary to lower the rating of the output current of the inverter device, and it is possible to suppress a decrease in performance. In addition, even if the switching frequency is increased to reduce noise, it is not necessary to increase the size of the radiation fins or increase the air volume of the cooling fan, and it is possible to suppress an increase in manufacturing cost.

(Second Embodiment) FIG. 3 shows the configuration of a semiconductor switch device according to a second embodiment of the present invention. The semiconductor switch device according to the second embodiment is shown in FIG.
The semiconductor switching device of the first embodiment shown in, the Peltier element 4 _first plurality between the insulating substrate 2 and the insulating substrate 3 (four on FIG. 3), ... 4 ₄ is configured in which a I have. Each Peltier element 4 _i (i = 1,..., 4) has the same configuration as the Peltier element 4 of the first embodiment, and the cold junction of each Peltier element is provided so as to be in contact with the insulating substrate 2. The hot junction is provided so as to be in contact with the insulating plate 3. And
The P-type semiconductor portion of the Peltier device 4 _i (i = 1, 2, 3) and the N-type semiconductor portion of the Peltier device 4 _{i + 1} are connected by a conductor provided on the insulating plate 3, that is, a plurality of Peltier elements 4 _1, ... 4 ₄ has a configuration connected in series.

The semiconductor switch device of this embodiment can increase the amount of cooling heat compared with the semiconductor switch device of the first embodiment, and can further suppress the temperature rise of the IGBT chip 1. As a result, it is possible to suppress a decrease in performance as much as possible and to suppress an increase in manufacturing cost.

(Third Embodiment) Next, a third embodiment of the semiconductor switch device according to the present invention will be described with reference to FIGS.
This will be described with reference to FIG. FIG. 4A is a cross-sectional view illustrating a configuration of the semiconductor switch device according to the third embodiment.
FIG. 4B is a circuit diagram showing the connection between the IGBT chip 1 and the Peltier element 4.

The semiconductor switching device of the third embodiment, the semiconductor switching device of the second embodiment shown in FIG. 3, to remove the direct current power supply 8, a plurality of Peltier elements connected in series 4 ₁ , ... 4 constituting the Peltier element group 10 consisting of ₄ an IGBT chip 1, which is constituted so as to supply current from one IGBT of a plurality of IGBT connected in parallel (see FIG. 4 (b) reference). In this embodiment, in order to allow a current to flow through the Peltier element group 10 in one direction as shown in FIG.
A block diode 11 is provided between the BT and the Peltier element group 10.

In the semiconductor switch device according to the third embodiment, a gate signal is applied to each IGB of the IGBT chip 1.
When input to T, each IGBT is turned on, and a current flows through the Peltier element group 10 via the block diode 11. Thereby, each Peltier element 4 _i (i = 1,... 4)
Is cooled, and the temperature rise of the IGBT chip 1 is suppressed.

Next, how the IGBT chip 1 of the semiconductor switch device according to the third embodiment is cooled will be described with reference to FIG. FIG. 5A shows the output current (solid sine wave) of the motor connected to the inverter device including the semiconductor switch device of this embodiment, and the IGBT is repeatedly turned on and off in order to flow this current. In FIG. 5A, a hatched portion is an IGBT ON section and a white background is an OFF section. FIG. 5B shows a state where a current is flowing through the Peltier element. In the third embodiment, the cooling operation is performed by flowing the Peltier element only in the ON section of the IGBT.
The on-period of the IGBT becomes longer, the current increases, and the
As the loss of the chip 1 increases, the conduction time and the current of the Peltier element increase, and the cooling efficiency increases. Conversely, when the motor output current shown in FIG. 5A becomes negative, only the freewheeling diode 9 is turned on.
Since the temperature rise of the T chip 1 does not occur, current does not flow to the Peltier element and cooling is not performed, and cooling by the Peltier element is not wasted and efficient cooling can be performed. As a result, a decrease in performance can be suppressed as much as possible, and the manufacturing cost can be suppressed.
Further, since the Peltier element itself is a semiconductor element like the IGBT chip, if a Peltier element having a curve similar to the transient thermal resistance shown in FIG. 18 is selected in the third embodiment, the temperature rise of the IGBT chip 1 can be reduced. Proportional cooling can be performed, which is more efficient.

(Fourth Embodiment) FIG. 6 shows the configuration of a fourth embodiment of the semiconductor switch device according to the present invention. The semiconductor switch device according to the fourth embodiment is shown in FIG.
In the semiconductor switch device according to the third embodiment shown in ( ₁₎ , the Peltier elements 30 ₁ and 30 ₂ are provided directly below the free-wheeling diode 9 via the insulating substrate 2.
That is, the cooling surface formed by the Peltier element extends not only to the lower surface of the IGBT chip 1 but also to the lower surface of the freewheeling diode 9. The Peltier devices 30 ₁ and 3
0 ₂ is configured to be connected in series with the Peltier elements 4 ₁ ,..., 4 ₄ .

In the fourth embodiment, the IGB
When the T chip 1 is on, the freewheeling diode 9 is not turned on, and when the freewheeling diode 9 is on, the IGB
The T chip 1 does not turn on. However, if the lower surface of the freewheeling diode 9 is sufficiently cooled when the IGBT chip 1 is turned on and the freewheeling diode 9 is kept in a cold state, the freewheeling diode 9 is turned on next time when the freewheeling diode 9 is turned on. Since the current is supplied in the cold state, it is possible to suppress an increase in the temperature of the junction of the freewheeling diode 9.

It goes without saying that the semiconductor switch device according to the fourth embodiment has the same effect as the semiconductor switch device according to the third embodiment.

(Fifth Embodiment) Next, a fifth embodiment according to the present invention will be described.
FIG. 7 shows the configuration of the fifth embodiment of the conductor switch device.
You. The semiconductor switch device of this embodiment is shown in FIG.
In the semiconductor switch device according to the third embodiment,
Peltier element 4_i(I = 1,... 4) N-type semiconductor portion, P
Mold semiconductor section and a cord connecting these semiconductor sections.
Ends in a space surrounded by conductors
Part 32 having a conductor formed thereon_iThis semiconductor
Body part 32_iSo that the conductor at one end of the
Has been established. The Peltier element 4_i(I-1, ...
4) and the semiconductor part 32_iAnd are electrically insulated. So
And the adjacent Peltier element 4_i, 4_{i + 1}(I = 1, ...
3) The semiconductor part 32 provided in each_i, 32_{i + 1}Conductive
The type is reversed. For example, the semiconductor unit 32₁, 32_Three
Is an N-type semiconductor device._Two, 32_FourIs P-type.
In addition, each semiconductor unit 32_i(I = 1,..., 4)
Body, that is, an end provided with a conductor in contact with the insulating plate 3
The conductor provided at the end opposite to the Peltier element 4_i
Do not come in contact with conductors that will be cold junctions
It is provided as follows. And the semiconductor part 32₁And 32
_TwoThe other end of the wiring 33₁Connected by the semiconductor part
32_ThreeAnd 32_FourThe other end of the wiring 33_TwoContact by
It has a continued configuration. The semiconductor section 32_TwoInsulation
A conductor in contact with the plate 3; _ThreeIn contact with the insulating plate 3
Is the conductor 33_ThreeAnd the configuration connected by
ing. Therefore, the semiconductor section 32₁, ... 32_FourIs in series
It is configured to be connected to Further, the semiconductor section 32₁You
And semiconductor part 32_FourConductor in contact with the insulating plate 3
External terminals 34 so that they can be connected to the outside of the body switch device.
a, 34b.

The semiconductor units 32 ₁ ,... 3 connected in series provided in the semiconductor switch device of the fifth embodiment.
2 ₄ operates to produce the Seebeck effect which is the opposite of the physical development and Peltier effect. Each semiconductor part 32 _i (i =
The conductors provided on the side opposite to the side in contact with the insulating plate 3 of (1,... 4) are not in contact with the high-temperature insulating plate 3 and thus have a low temperature. Thereby, each semiconductor unit 3
In 2 _i (i = 1,..., 4), a potential difference ΔV is generated between the conductor in contact with the insulating plate 3 and the conductor not in contact with the conductor due to the Seebeck effect. And the semiconductor unit 3
2 _1, because the ... 32 ₄ are connected in series, the external terminal 34a, the inter-34b, so that the potential difference between the number × [Delta] V of the semiconductor portion is generated. These external terminals 34a, 34b
If, for example, a storage battery is connected to the battery, charging becomes possible. By doing so, it becomes possible to take out the generated potential difference to the outside, the Peltier element 4 _1, ... 4 can temperature difference between the high temperature portion and the low temperature portion ₄ is made to be smaller, heat dissipation Efficiency can be further improved. As a result, it is possible to suppress a decrease in the performance of the semiconductor switch device.

(Sixth Embodiment) Next, a semiconductor switch device according to a sixth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to (a) and (b). FIG. 8B is a cross-sectional view of the semiconductor switch device according to the sixth embodiment taken along a cutting plane YY shown in FIG. 8A, and FIG. FIG. 8A is a cross-sectional view taken along line XX.

The semiconductor switch device according to the sixth embodiment has a Peltier composed of n (≧ 2) Peltier elements 4 ₁ ,... 4 _n connected in series between an insulating substrate 2 and an insulating plate 3. Two element groups are provided in parallel, and each Peltier element 4
_The holes 36 provided in the insulating substrate 2 corresponding to _i (i = 1,..., n) correspond to the N-type and P-type semiconductor portions of each Peltier element 4 _i (i = 1,. those configured so as to reach the inside of the IGBT chip 1 conductor 5b _i that connects the parts are punch-through.

Each Peltier element 4 _i (i = 1,...)
The cold junction part of n) is provided on the insulating substrate 2 side, and the hot junction is provided on the insulating plate 3 side, similarly to the second to fifth embodiments.

A constant insulating gap is formed between the insulating substrate 2 and each Peltier element 4 _i (i = 1,... N) inserted into the corresponding hole 36 of the insulating substrate 2. Configuration.

With this configuration, the IGBT
The entire surface of the chip 1 can be cooled evenly,
An increase in manufacturing cost can be suppressed as much as possible, and a decrease in performance of the semiconductor switch device can be suppressed.

Further, by applying insulating grease having good thermal conductivity to the insulating gap, the thermal resistance of the insulating substrate 2 can be neglected, the IGBT chip 1 itself can be cooled, and the cooling efficiency can be reduced. Can be better.

(Seventh Embodiment) Next, a semiconductor switch device according to a seventh embodiment of the present invention will be described with reference to FIG. FIG. 9 is a sectional view showing the configuration of the semiconductor switch device according to the seventh embodiment.

The semiconductor switch device according to the seventh embodiment comprises an IGBT chip 1, an insulating substrate 2, an insulating plate 3
And a plurality of Peltier elements 4 ₁ ,... 4 _n connected in series
A Peltier device group including (n ≧ 2), a free-wheeling diode 9, and a housing 40 made of, for example, copper are provided.

The IGBT chip 1 and the freewheeling diode 9 are mounted on the surface of the insulating substrate 2. And IGBT chip 1
Are connected in anti-parallel with the IGBT and the freewheeling diode 9. Each Peltier element 4
The cold junction of _i (i = 1,..., n) is configured to be in contact with the back surface of the insulating substrate 2. In addition, each Peltier element 4 _i (i =
1,... N), a through hole is provided corresponding to the lower member 41b.
The insulating plate 3 is formed so as to be in contact with the inner surface of the substrate.
Each of the Peltier elements 4 _i (i = 1,..., N) passes through the corresponding through hole of the housing 40,
The hot junction is configured to be in contact with the insulating plate 3. That is, each Peltier element 4 _i (i = 1,...)
The semiconductor part of n) is exposed inside the housing 40. Note that the Peltier element group is configured so that current is supplied via the IGBT chip 1.

An opening (not shown) is provided in the pair of side surfaces of the housing 40 so that air can pass from one side surface to the other side surface. It is configured to be fed into the body 40.

In the semiconductor switch device of the present embodiment configured as described above, the wind is sent to the Peltier element exposed in the housing 40, so that the hot junction of the Peltier element is cooled better. And cooling efficiency can be further improved. As a result, a decrease in performance can be suppressed.

FIGS. 10 (a) and 10 (b) show an example in which the cooling fan 13 forcibly blows air into the housing 40 in the seventh embodiment. FIG. 10B is a side view of the semiconductor switch device according to the seventh embodiment, and FIG.
0 (a) is a cross-sectional view taken along the cross-sectional view ZZ shown in FIG. 10 (b). Reference numeral 12 indicates a state in which the IGBT chip 1, the insulating substrate 2, and the freewheeling diode are sealed with a resin.

(Eighth Embodiment) FIG. 11 shows a semiconductor switch device according to an eighth embodiment of the present invention. The semiconductor switch device according to the eighth embodiment includes:
The semiconductor switch device according to the seventh embodiment shown in FIG. 9 is provided, for example, on both sides of an aluminum plate 14 and these semiconductor switch devices are forcibly cooled by a cooling fan 13.

It goes without saying that the semiconductor switch device of this embodiment also has the same effect as that of the seventh embodiment. Further, the number of cooling fans can be reduced, and the mounting space for the semiconductor switch device can be reduced.

(Ninth Embodiment) FIG. 12 shows the configuration of a ninth embodiment of the semiconductor switch device according to the present invention. The semiconductor switch device of the ninth embodiment has a P
A semiconductor switch section 50 and an N-type semiconductor switch section 60 are provided. The P-type semiconductor switch unit includes a plurality of bipolar transistors 51, a free-wheeling diode 59 connected in anti-parallel to these bipolar transistors, a bipolar transistor 52, a diode 53, a Peltier element 54, and terminals C1 and E1. ing. The N-type semiconductor switch section 60 includes a plurality of bipolar transistors 61, a free-wheeling transistor 69 connected in anti-parallel to these bipolar transistors 61, a bipolar transistor 62, a diode 63, and a Peltier element 64.
And terminals C2 and E2.

The collector of the bipolar transistor 51 is connected to the power supply terminal P of the main circuit, and the emitter is connected to the AC load. The collector of the bipolar transistor 52 is connected to the power supply terminal P of the main circuit via the terminal C1,
The emitter is connected to one end of the Peltier element 54 via the diode 53. The other end of the Peltier element 54 is a terminal E1
To the power supply terminal N of the main circuit. A control signal is input to the bases of the bipolar transistors 51 and 52.

On the other hand, the collector of bipolar transistor 61 is connected to an AC load, and the emitter is connected to power supply terminal N of the main circuit. The collector of the bipolar transistor 62 is connected to the main circuit P via the terminal C2, and the emitter is connected to one end of the Peltier element 64 via the diode 63. The other end of the Peltier element 64 is connected to the main circuit N via the terminal E2. A control signal is input to the bases of the bipolar transistors 61 and 62.

As described above, in the semiconductor switch device of the present embodiment, the current is supplied to the Peltier elements 54 and 64 from the main circuit power supply. As a result, the Peltier devices 54 and 64 are not affected by the collector-emitter voltage when the bipolar transistors 52 and 62 are turned on, and are supplied with a constant voltage.
Stable cooling becomes possible.

In this embodiment, an increase in manufacturing cost can be suppressed as much as possible, and a decrease in performance can be suppressed.

(Tenth Embodiment) Next, the first embodiment of the present invention will be described.
FIG. 13 shows the configuration of the 0th embodiment. This tenth embodiment relates to a power converter, and a converter 72
And an inverter device 82. The converter device 72 converts AC power output from the AC power supply 70 into DC power, and has a configuration in which three sets of a series circuit including two switching devices 74 connected in series are connected in parallel. Has become. Each switch device 74 has the same configuration as any of the semiconductor switch devices of the first to ninth embodiments.

The inverter device 82 converts DC power into AC power having a desired frequency and supplies the AC power to the motor 80. The inverter device 82 has a series circuit composed of two switching devices 84 connected in series. The configuration is such that the pairs are connected in parallel. Each switching device 84 is connected to the first
It has the same configuration as any of the semiconductor switch devices of the ninth to ninth embodiments.

In the power converter of this embodiment, since the semiconductor switch devices of the first to ninth embodiments are used as switching devices, it is possible to suppress an increase in manufacturing costs as much as possible. Performance degradation can be controlled.

(Eleventh Embodiment) Next, the first embodiment of the present invention will be described.
FIG. 14 shows the configuration of the first embodiment. The eleventh embodiment is a power converter, and has a configuration in which the converter is replaced with a converter 72A in the power converter of the tenth embodiment.

The converter 72A has a configuration in which the switching device 74 of the converter 72 shown in FIG.

Needless to say, this embodiment has the same effect as the tenth embodiment.

In the semiconductor switch devices of the first to eleventh embodiments, the IGB is used as a switching element.
Although T was used, a bipolar transistor, FET (Field Effect Transistor), GTO
(Gate Turn Off Thyristor), IEGT (Injection E)
nhanced Gate Transistor) or IPM (Intellige)
It goes without saying that an nt power module) may be used.

[0066]

As described above, according to the present invention, a decrease in performance can be prevented as much as possible.

[Brief description of the drawings]

FIG. 1 is a sectional view showing the configuration of a first embodiment of the present invention.

FIG. 2 is a schematic view illustrating the principle of a Peltier device.

FIG. 3 is a sectional view showing a configuration of a second embodiment of the present invention.

FIG. 4 is a diagram showing a configuration of a third embodiment of the present invention.

FIG. 5 is a graph illustrating a cooling operation of the semiconductor switch device according to the present invention.

FIG. 6 is a sectional view showing the configuration of a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing a configuration according to a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a configuration of a sixth embodiment of the present invention.

FIG. 9 is a sectional view showing the configuration of a seventh embodiment of the present invention.

FIG. 10 is a diagram showing a modification of the seventh embodiment.

FIG. 11 is a sectional view showing the configuration of an eighth embodiment of the present invention.

FIG. 12 is a circuit diagram showing a configuration of a ninth embodiment of the present invention.

FIG. 13 is a circuit diagram showing a configuration according to a tenth embodiment of the present invention.

FIG. 14 is a circuit diagram showing a configuration according to an eleventh embodiment of the present invention.

FIG. 15 is a configuration diagram showing a configuration of a conventional semiconductor switch device.

FIG. 16 is a circuit diagram showing the connection between the IGBT chip and the freewheeling diode.

FIG. 17 is a graph illustrating a problem of an inverter device including a conventional semiconductor switch device.

FIG. 18 is a graph showing transient thermal time constant characteristics of an IGBT chip.

[Explanation of symbols]

Reference Signs List 1 IGBT chip 2 Insulating substrate 3 Insulating plate 4 Peltier element 4 _i (i = 1,... N) Peltier element 5a Conductor 5b Conductor 6a N-type semiconductor part 6b P-type semiconductor part 7 Heat sink 8 DC power supply 9 DC diode 10 Peltier element group 11 Block diode 12 Mold resin 13 Cooling fan 14 Aluminum plate 15 Heat radiation fin 18 Electron 19 Hole

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 29/78 655F F-term (Reference) 5F036 AA01 BA33 BB01 BB08 5H006 AA05 BB05 CA01 CA02 CA05 CA07 CA12 CA13 CB01 CB08 CC05 DC08 HA05 HA08 HA41 5H007 AA06 BB06 CA01 CA02 CA05 CB05 CC12 CC23 DC08 HA03 HA04 HA06 HA07

Claims (10)

[Claims] An insulating substrate, a semiconductor chip mounted on a main surface of the insulating substrate and having a switching element formed thereon, provided on the main surface of the insulating substrate, anti-parallel to the switching element. A reflux diode connected thereto; an N-type semiconductor portion and a P-type semiconductor portion; and a conductor portion connecting the N-type semiconductor portion and the P-type semiconductor portion.
And a Peltier element configured so that the conductor part is in contact with the back surface of the insulating substrate. 2. The Peltier element section has an N-type semiconductor section, a P-type semiconductor section, and a first conductor section connecting one end of the N-type semiconductor section to one end of the P-type semiconductor section. ,
At least one set of first to n-th (n ≧ 2) Peltier elements configured such that the first conductor portion is in contact with the back surface of the insulating substrate, and the i-th (i = 1,..., N−) The other end of the P-type semiconductor portion of the Peltier device of 1) is connected to the other end of the N-type semiconductor portion of the (i + 1) -th Peltier device by a second conductor portion, and the second conductor portion is on a heat sink. 2. The semiconductor switch device according to claim 1, wherein said semiconductor switch device is configured to be in contact with an insulating plate provided in said semiconductor device. 3. The semiconductor switch device according to claim 2, wherein said Peltier device is disposed immediately below said semiconductor chip. 4. The semiconductor switch device according to claim 3, wherein said Peltier element portion is disposed so as to extend immediately below said free-wheeling diode. 5. The semiconductor chip has a plurality of switching elements connected in parallel, and the Peltier element section is connected in series with one of the plurality of switching elements. Claims 2 to 4
The semiconductor switch device according to any one of the above. 6. The i-th (i = 1,..., N) Peltier element has one end in contact with the insulating plate via a conductor between an N-type semiconductor portion and a P-type semiconductor portion. An i-th semiconductor piece having an end in the air is provided, and the i-th (i-th) semiconductor chip is provided.
= 1,..., N−1) and the (i + 1) th semiconductor piece have different conductivity types, and the first to nth semiconductor pieces are connected in series to form a series circuit. 6. The semiconductor switch device according to claim 2, wherein said terminal is configured to be drawn out to the outside. 7. A second heat sink having a hole through which each of the semiconductor portions of the first to nth Peltier elements penetrates, and a second heat sink together with the heat sink between the insulating substrate and the heat sink. The semiconductor switch device according to claim 2, wherein the semiconductor switch device is provided so as to form a body. 8. An insulating substrate, and a semiconductor chip mounted on a surface of the insulating substrate and having a switching element formed thereon,
A reflux diode provided on the surface of the insulating substrate and connected in anti-parallel with the switching element; an N-type semiconductor portion, a P-type semiconductor portion, and one end of the N-type semiconductor portion and the P-type semiconductor portion; A first conductive portion for connecting one end of the semiconductor portion, wherein the first conductive portion penetrates through the insulating substrate and is located inside the semiconductor chip; (N ≧ 2) Peltier device
A Peltier element having at least one set, wherein the other end of the P-type semiconductor part of the i-th (i = 1... N-1) Peltier element is the other end of the N-type semiconductor part of the (i + 1) -th Peltier element And the second conductor portion,
Wherein the conductor portion is configured to be in contact with an insulating plate provided on the heat sink. 9. A power conversion device comprising an inverter device comprising a plurality of switching devices, wherein each switching device is the semiconductor switch device according to any one of claims 1 to 8. 10. A switching device comprising a plurality of switching devices, each switching device comprising:
10. The power conversion device according to claim 9, wherein the power conversion device is any one of the semiconductor switch devices.