JP2000282219A - Method for reproducing mask for organic film vacuum deposition and device therefor - Google Patents
Method for reproducing mask for organic film vacuum deposition and device thereforInfo
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- JP2000282219A JP2000282219A JP11095809A JP9580999A JP2000282219A JP 2000282219 A JP2000282219 A JP 2000282219A JP 11095809 A JP11095809 A JP 11095809A JP 9580999 A JP9580999 A JP 9580999A JP 2000282219 A JP2000282219 A JP 2000282219A
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- mask
- organic film
- temperature
- heating
- organic
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機膜真空蒸着用
マスク再生方法及び装置に関し、例えば有機ＥＬディス
プレイなどマスク成膜が必要な有機膜の成膜に用いたマ
スクに付着した有機膜を除去するマスクの再生方法及び
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for regenerating a mask for vacuum deposition of an organic film, and for removing an organic film attached to a mask used for forming an organic film such as an organic EL display which requires a mask. The present invention relates to a method and an apparatus for reproducing a mask.
【０００２】[0002]
【従来の技術】有機ＥＬのディスプレイなどの製作に
は、有機膜真空蒸着法によりマスクを用いたマスク成膜
技術によるパターニングが行われている。前記マスクに
有機膜が堆積してくると前記マスクの開口が目詰まりを
おこしたり、堆積した有機膜の影響でパターンずれが発
生し素子の不良の原因となる。これを、防止するために
一般的には、真空槽を大気に開放し、前記マスクを取り
出し堆積した有機膜の除去を行うか、新しいマスクに交
換することが行われている。有機膜の除去を行う方法
は、大気に取り出し、有機溶剤で有機膜を溶かす方法
や、ブラスト処理のような方法により有機膜を削り取る
のが一般的なマスクの再生方法である。2. Description of the Related Art In manufacturing an organic EL display or the like, patterning is performed by a mask film forming technique using a mask by an organic film vacuum deposition method. When an organic film is deposited on the mask, the openings of the mask are clogged, and a pattern shift occurs due to the effect of the deposited organic film, which causes a device failure. In order to prevent this, generally, the vacuum chamber is opened to the atmosphere, the mask is taken out, and the deposited organic film is removed or replaced with a new mask. As a method of removing the organic film, a general method of regenerating a mask is to take out the film into the atmosphere and dissolve the organic film with an organic solvent, or to scrape the organic film by a method such as blasting.
【０００３】また、従来の真空処理装置における真空中
での堆積膜の除去方法は、例えば特開平８−３１９５８
６号公報にあるように、図５に示すプラズマ用電極１２
と対向アース電極１３を有する真空槽５に、エッチング
ガス１４を流しプラズマを発生させ、膜（残留生成物）
をエッチングする方法が行われている。A method of removing a deposited film in a vacuum in a conventional vacuum processing apparatus is disclosed in, for example, JP-A-8-31958.
As disclosed in Japanese Unexamined Patent Application Publication No. 6-2006, the plasma
And an etching gas 14 is caused to flow through the vacuum chamber 5 having the opposite ground electrode 13 to generate plasma, thereby forming a film (residual product).
Has been performed.
【０００４】この方法は、一般的には、真空槽内にプラ
ズマ発生用の電極を持った、プラズマＣＶＤ装置、エッ
チング装置の膜除去、及び副成生物の除去に用いられ、
成膜材料を真空槽内に持つ、スパッタリング装置には用
いられない。これは、カソードにボンディングされたタ
ーゲット材料がエッチングされてしまうからである。This method is generally used for removing a film of a plasma CVD apparatus and an etching apparatus having an electrode for generating plasma in a vacuum chamber, and removing by-products.
It is not used in a sputtering apparatus having a film forming material in a vacuum chamber. This is because the target material bonded to the cathode is etched.
【０００５】[0005]
【発明が解決しようとする課題】前記のように、有機Ｅ
Ｌディスプレイなどのマスク成膜において、マスクに付
着した膜を除去せずに成膜を続けると、パターンずれ不
良や前記マスクの目詰まりによるパターン不良が発生す
る。そこで、マスクのクリーニングまたは交換が必要に
なる。パターンの高精細化が進めば、マスクの目詰まり
は、顕著になる。As described above, the organic E
In film formation of a mask for an L display or the like, if film formation is continued without removing the film adhered to the mask, a pattern shift failure or a pattern failure due to clogging of the mask occurs. Therefore, it is necessary to clean or replace the mask. As the definition of the pattern increases, clogging of the mask becomes more noticeable.
【０００６】また、有機材料は吸湿性があり、材料の脱
ガスや脱水を充分に行わないと有機ＥＬ素子などは、寿
命が著しく低下することが知られている。マスクに付着
した有機膜を除去するために、真空槽を一旦大気に開放
すると、真空槽及び有機材料の水分除去など、成膜でき
る状態に復帰させるまでに非常に時間がかかり、生産効
率が低下してしまう。Further, it is known that the organic material is hygroscopic, and if the material is not sufficiently degassed or dehydrated, the life of the organic EL element or the like is significantly reduced. Once the vacuum chamber is opened to the atmosphere to remove the organic film adhering to the mask, it takes a very long time to return to a state where a film can be formed, such as removing the water from the vacuum chamber and organic materials, and the production efficiency decreases. Resulting in.
【０００７】また、前記マスクを交換した場合、前記マ
スクの位置合わせをその都度行う必要がある。この作業
は、数十μｍから数μｍの精度で位置合わせする必要が
あり、作業が煩雑であり、位置調整機構や位置合わせの
確認できるモニター機構を取り付けておく必要がある。Further, when the mask is replaced, it is necessary to adjust the position of the mask each time. In this operation, it is necessary to perform positioning with an accuracy of several tens μm to several μm, the operation is complicated, and it is necessary to attach a position adjusting mechanism and a monitor mechanism capable of confirming the positioning.
【０００８】また、特開平８−３１９５８６号公報にあ
るようなプラズマを発生させ、真空中で膜を除去する方
法は、以下の理由で有機膜の真空蒸着には不向きであ
る。１．膜のエッチングのためだけにプラズマを発生さ
せるための電極、電源が必要となる。２．プラズマエッ
チングは、エッチングガスを使用するため排ガス処理装
置やガス供給装置などの設備が必要になる。ガス処理設
備は、既設の設備を使用できれば、問題ないが、新規に
設備しようとすれば、多額の費用が必要である。３．エ
ッチング電極、電源を有機膜蒸着装置内部に付加させよ
うとすると、電極シールドや、高周波用フィードスルー
など、内部の構造が非常に複雑になる。４．プラズマに
よるエッチングの問題点として、プラズマによって発生
された反応ガスのラジカルによって蒸発源ルツボ内の有
機材料まで除去されてしまうことがある。有機膜蒸着方
法においては、前記マスクに付着した有機膜のみを除去
する必要がある。The method of generating plasma in Japanese Patent Application Laid-Open No. 8-319586 and removing the film in a vacuum is not suitable for vacuum deposition of an organic film for the following reasons. 1. An electrode and a power supply for generating a plasma only for etching the film are required. 2. Since plasma etching uses an etching gas, facilities such as an exhaust gas treatment device and a gas supply device are required. There is no problem if the existing equipment can be used for the gas treatment equipment, but if a new equipment is to be used, a large cost is required. 3. When an etching electrode and a power supply are to be added to the inside of the organic film deposition apparatus, the internal structure such as an electrode shield and a high-frequency feedthrough becomes very complicated. 4. As a problem of etching by plasma, the organic material in the evaporation source crucible may be removed by radicals of the reaction gas generated by the plasma. In the organic film deposition method, it is necessary to remove only the organic film attached to the mask.
【０００９】本発明は、この様な従来技術の欠点を改善
するためになされたものであり、有機膜真空蒸着法にお
いて真空槽内の前記マスクに付着した有機膜を、真空槽
を大気圧に開放すること無しに、プラズマによるエッチ
ングを使用せずに容易に除去することができる有機膜真
空蒸着用マスク再生方法及び装置を提供することを目的
とするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks of the prior art. In the organic film vacuum deposition method, the organic film adhered to the mask in the vacuum chamber is reduced to atmospheric pressure. An object of the present invention is to provide a method and an apparatus for regenerating a mask for vacuum deposition of an organic film, which can be easily removed without using plasma etching without opening.
【００１０】[0010]
【課題を解決するための手段】即ち、本発明の第一の発
明は、マスクを用いた有機膜真空蒸着により前記マスク
に付着した有機膜を除去するマスクの再生方法におい
て、前記マスクに付着した有機膜を加熱処理により真空
を破らずに除去する事を特徴とする有機膜真空蒸着用マ
スク再生方法である。That is, a first aspect of the present invention relates to a method of regenerating a mask for removing an organic film adhered to the mask by vacuum evaporation of the organic film using the mask. This is a method for regenerating a mask for vacuum deposition of an organic film, wherein the organic film is removed by heat treatment without breaking vacuum.
【００１１】前記加熱処理は、マスクを有機膜の有機材
料の蒸発温度又は昇華温度以上に昇温し付着した有機膜
を除去する事を特徴とする。前記加熱処理は、輻射加熱
または伝導加熱できるヒーターを使用して、有機膜の有
機材料の蒸発温度又は昇華温度以上にマスクを昇温し付
着した有機膜を除去するのが好ましい。前記加熱処理
は、前記マスクに直接電流を流してジュール熱で有機膜
の有機材料の蒸発温度又は昇華温度以上に前記マスクを
昇温し付着した有機膜を除去するのが好ましい。前記加
熱処理は、誘導加熱により有機膜の有機材料の蒸発温度
又は昇華温度以上に前記マスクを昇温し付着した有機膜
を除去するのが好ましい。[0011] The heat treatment is characterized in that the temperature of the mask is raised to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film, and the attached organic film is removed. In the heat treatment, it is preferable that a heater capable of radiant heating or conduction heating is used to raise the temperature of the mask to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film to remove the attached organic film. In the heat treatment, it is preferable that a current is directly passed through the mask to raise the temperature of the mask to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film by Joule heat to remove the attached organic film. In the heat treatment, the mask is preferably heated to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film by induction heating to remove the attached organic film.
【００１２】本発明の第二の発明は、蒸発源、マスク、
真空槽および排気装置にて構成される有機膜真空蒸着装
置において、有機膜真空蒸着によりマスクに付着した有
機膜を加熱処理により真空を破らずに除去するマスク再
生手段を具備することを特徴とする有機膜真空蒸着装置
である。According to a second aspect of the present invention, there is provided an evaporation source, a mask,
An organic film vacuum deposition apparatus comprising a vacuum chamber and an exhaust device, characterized by comprising a mask regenerating means for removing an organic film adhered to the mask by the organic film vacuum deposition without breaking vacuum by a heat treatment. It is an organic film vacuum deposition device.
【００１３】前記マスク再生手段が、マスクを輻射加熱
または伝導加熱できるヒーター、該ヒーターの温度を制
御できる電源で構成され、前記マスクに付着した有機膜
の有機材料の蒸発温度又は昇華温度以上にマスクをヒー
ターにより昇温して付着した有機膜を除去する加熱手段
からなるのが好ましい。The mask reproducing means comprises a heater capable of radiantly or conductively heating the mask, and a power supply capable of controlling the temperature of the heater. The mask has a temperature higher than the evaporation temperature or sublimation temperature of the organic material of the organic film attached to the mask. Is preferably heated by a heater to remove the adhered organic film by raising the temperature with a heater.
【００１４】前記マスク再生手段が、マスクに電流を流
すことができる配線、フィードスルー及び前記マスクの
温度を制御できる電源で構成され、前記マスクに付着し
た有機膜の有機材料の蒸発温度又は昇華温度以上にマス
クを電流のジュール熱により昇温して付着した有機膜を
除去する加熱手段からなるのが好ましい。[0014] The mask reproducing means is composed of a wiring capable of flowing a current through the mask, a feedthrough, and a power supply capable of controlling the temperature of the mask, and the evaporation temperature or the sublimation temperature of the organic material of the organic film attached to the mask. As described above, it is preferable to include a heating unit that raises the temperature of the mask by the Joule heat of the current to remove the attached organic film.
【００１５】前記マスク再生手段が、誘導加熱するため
の誘導コイルおよび誘導加熱用高周波電源で構成され、
前記マスクに付着した有機膜の有機材料の蒸発温度又は
昇華温度以上にマスクを電磁誘導により昇温して付着し
た有機膜を除去する加熱手段からなるのが好ましい。The mask reproducing means comprises an induction coil for induction heating and a high-frequency power supply for induction heating;
It is preferable that the heating means comprises heating means for heating the mask by electromagnetic induction to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film attached to the mask to remove the attached organic film.
【００１６】[0016]
【発明の実施の形態】以下、本発明を詳細に説明する。
本発明の有機膜真空蒸着用マスク再生方法は、マスクを
用いた有機膜真空蒸着方法において、前記マスクに付着
した有機膜を、加熱処理により真空を破らずに除去する
事を特徴とする。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
The method for regenerating a mask for organic film vacuum deposition according to the present invention is characterized in that, in the organic film vacuum deposition method using a mask, the organic film adhered to the mask is removed by heat treatment without breaking vacuum.
【００１７】また、本発明の有機膜真空蒸着装置は、蒸
発源、マスク、真空槽、排気装置にて構成される有機膜
真空蒸着装置において、前記マスクを輻射加熱、また
は、伝導加熱できるヒーター、及び、前記ヒーターの温
度を制御できる電源で構成され、前記マスクに付着した
有機材料の蒸発温度又は昇華温度以上に前記マスクを輻
射加熱または伝導加熱できるヒーターにより昇温させる
ことができる事、あるいは前記マスクに電流を流すこ
とができる配線、フィードスルー、及び、前記マスクの
温度を制御できる電源で構成され、前記マスクに付着し
た有機材料の蒸発温度又は、昇華温度以上に前記マスク
に、電流を流しジュール熱により、前記マスクを昇温さ
せることができる事、または誘導加熱するための誘導
コイルおよび誘導加熱用高周波電源で構成され、前記マ
スクを電磁誘導により、材料の蒸発温度又は、昇華温度
以上に昇温させることができる事を特徴とする。The organic film vacuum vapor deposition apparatus of the present invention is an organic film vacuum vapor deposition apparatus comprising an evaporation source, a mask, a vacuum chamber, and an exhaust device, wherein a heater capable of radiantly heating or conducting heating the mask is provided. And a power supply capable of controlling the temperature of the heater, wherein the mask can be heated by a heater capable of radiantly or conductively heating the mask to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material attached to the mask, or Wiring that allows current to flow through the mask, feed-through, and a power supply that can control the temperature of the mask, and is configured to supply a current to the mask at a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material attached to the mask. The mask can be heated by Joule heat, or an induction coil and induction heating for induction heating Consists of frequency power source, by electromagnetic induction the mask, the evaporation temperature of the material or, characterized in that it is possible to raise the temperature above the sublimation temperature.
【００１８】従来の問題点は、上記のように膜の除去を
行うために大気開放すると真空槽、及び有機材料の水分
除去など、成膜できる状態に復帰させるまでに非常に時
間がかかることであり、前記マスクの位置合わせに、複
雑な位置合わせ機構及びモニター機構が必要なことであ
る。The conventional problem is that when the film is opened to the atmosphere to remove the film as described above, it takes a very long time to return to a state in which a film can be formed, such as a vacuum chamber and removal of water from an organic material. There is a need for a complicated positioning mechanism and a monitoring mechanism for positioning the mask.
【００１９】また、従来のような、真空中での膜除去に
は、エッチングガスと、プラズマ電源、電極、排ガス処
理設備など多額な投資が必要なこと、プラズマによって
発生された反応ガスのラジカルによって蒸発源ルツボ内
の有機材料まで除去されてしまう問題がある。In addition, the conventional removal of a film in a vacuum requires a large investment such as an etching gas, a plasma power supply, an electrode, and an exhaust gas treatment facility. There is a problem that the organic material in the evaporation source crucible is removed.
【００２０】本発明では、上記の方法により、真空槽内
の前記マスクに付着した膜を、大気圧に開放すること無
しに、プラズマによるエッチングを使用せずに、有機膜
を除去することができた。In the present invention, the organic film can be removed by the above-mentioned method without exposing the film attached to the mask in the vacuum chamber to atmospheric pressure without using plasma etching. Was.
【００２１】有機膜は、真空中で比較的低い（約３００
℃以下）温度で蒸発又は昇華することから、前記マスク
に付着した材料の蒸発温度又は昇華温度より前記マスク
を高温に加熱することで膜を除去することができる。こ
の加熱機構により、前記マスクに付着した有機膜は、蒸
発し、蒸発した材料は、防着板などの温度の低い部分に
再付着する。Organic films are relatively low in vacuum (about 300
Since the film is evaporated or sublimated at a temperature of not more than (° C.), the film can be removed by heating the mask to a temperature higher than the evaporation temperature or the sublimation temperature of the material attached to the mask. By this heating mechanism, the organic film adhered to the mask evaporates, and the evaporated material is re-adhered to a low-temperature portion such as an anti-adhesion plate.
【００２２】また、この方法によれば、蒸発源ルツボの
直上に輻射熱防止用のシャッターがあれば蒸発源ルツボ
内の有機材料が、昇温され蒸発してしまうことは無い。
メンテナンス時の前記マスク交換がないため、前記マス
ク位置合わせは最初にセットするときに行えば良く、有
機膜の除去後のパターニングの再現性が良好であること
が確認することができた。Further, according to this method, the organic material in the evaporation source crucible does not evaporate by elevating the temperature if there is a shutter for preventing radiation heat immediately above the evaporation source crucible.
Since there is no mask exchange at the time of maintenance, the mask alignment may be performed at the time of first setting, and it was confirmed that the reproducibility of patterning after removing the organic film was good.
【００２３】前記マスク加熱方法として、次の３つの手
段が挙げられる。 １．輻射加熱または伝導加熱できるヒーターにより前記
マスクを加熱する。 ２．前記マスクに直接電流を流し、ジュール熱で加熱す
る。 ３．誘導加熱コイルと、高周波電源により電磁誘導によ
り前記マスクを加熱する。The mask heating method includes the following three means. 1. The mask is heated by a heater capable of radiant or conductive heating. 2. An electric current is applied directly to the mask, and the mask is heated with Joule heat. 3. The mask is heated by electromagnetic induction using an induction heating coil and a high frequency power supply.
【００２４】本発明において用いられる有機膜として
は、例えばトリアリールアミン系化合物、フタロシアニ
ン系化合物、キノリン系化合物の金属錯体、スチルベン
系化合物、オキサジアゾール系化合物、縮合芳香族環、
ヘテロ環系化合物等の膜が挙げられるが、もちろんこれ
らに限定されるものではない。Examples of the organic film used in the present invention include triarylamine compounds, phthalocyanine compounds, metal complexes of quinoline compounds, stilbene compounds, oxadiazole compounds, condensed aromatic rings,
Examples include films of heterocyclic compounds and the like, but are not limited thereto.
【００２５】[0025]
【実施例】以下に実施例を挙げて本発明を具体的に説明
する。EXAMPLES The present invention will be specifically described below with reference to examples.
【００２６】実施例１ 図１は本発明の有機膜真空蒸着用マスク再生方法の一実
施態様を示す概略図である。同図１は、ヒーターを用い
てマスクに付着した膜を除去する方法を示した図であ
る。１は基板及び基板ホルダー、２は基板に有機材料を
パターニング蒸着するためのマスク、３は成膜時間を管
理するためのシャッター、４は成膜材料を蒸発させるた
めの蒸発源、５は蒸着可能な圧力を維持するための真空
槽、６は不要な部分に着膜することを防ぐ防着板、７は
ヒーター用の温度制御可能な電源、８はマスクに着膜し
た材料を除去するための加熱ヒーター（今回はシースヒ
ーターを使用した）を示す。Embodiment 1 FIG. 1 is a schematic view showing an embodiment of a method of reproducing a mask for vacuum deposition of an organic film according to the present invention. FIG. 1 is a diagram showing a method of removing a film attached to a mask using a heater. 1 is a substrate and a substrate holder, 2 is a mask for patterning and depositing an organic material on a substrate, 3 is a shutter for controlling a film forming time, 4 is an evaporation source for evaporating a film forming material, and 5 is a deposition source. A vacuum tank for maintaining an appropriate pressure, 6 is an anti-adhesion plate for preventing deposition on unnecessary portions, 7 is a power source for controlling the temperature of a heater, and 8 is a device for removing the material deposited on the mask. Indicates a heating heater (this time using a sheath heater).
【００２７】実験方法及び結果を以下に示す。真空槽５
内圧力をｌ×１０-4Ｐａ以下に排気した後、蒸発源４
（クヌーセンセル）を約２５０℃にコントロールする。
水晶式膜厚モニターにより蒸着速度が安定すること（約
０．２ｎｍ／ｓ）を確認し、シャッター３を開き成膜を
開始する。水晶式膜厚モニターで０．３μｍの膜厚が着
膜したことを確認しシャッター３を閉める。この膜厚の
成膜を１０回行い、成膜されたパターンの測定を行っ
た。The experimental method and results are shown below. Vacuum tank 5
After evacuating the internal pressure to 1 × 10 −4 Pa or less, the evaporation source 4
(Knudsen cell) at about 250 ° C.
The deposition rate is confirmed to be stable (about 0.2 nm / s) by a quartz crystal film thickness monitor, and the shutter 3 is opened to start film formation. After confirming that a film thickness of 0.3 μm has been formed on the crystal film thickness monitor, the shutter 3 is closed. Film formation with this film thickness was performed 10 times, and the formed pattern was measured.
【００２８】マスクに、付着した総膜厚は約３μｍであ
る。テスト用マスクパターンを図２に示す。穴は５０μ
ｍ角、穴間隔は３０μｍのパターニングがされている。
１回目の成膜では、４９μｍ〜５０μｍの誤差範囲で成
膜ができたのに対し、１０回成膜後は、４６μｍ〜４９
μｍの誤差になった。The total film thickness attached to the mask is about 3 μm. FIG. 2 shows the test mask pattern. The hole is 50μ
An m-square pattern with a hole interval of 30 μm is formed.
In the first film formation, a film could be formed within an error range of 49 μm to 50 μm.
μm error.
【００２９】ここで、真空中でマスクを３００℃に加熱
し、１０分保持し、膜の除去を行い、常温になるのを待
ち再度成膜を行った。パターンを測定した結果は、４９
μｍ〜５０μｍの誤差範囲に収まった。この結果より、
マスクに付着した膜は、マスクを加熱することにより除
去されたと判断できる。Here, the mask was heated to 300 ° C. in vacuum, held for 10 minutes, the film was removed, and the film was formed again after waiting for normal temperature. The result of measuring the pattern is 49
It was within the error range of μm to 50 μm. From this result,
It can be determined that the film attached to the mask has been removed by heating the mask.
【００３０】実施例２ 図３は本発明の有機膜真空蒸着用マスク再生方法の他の
実施態様を示す概略図である。同図３は、マスクに直接
電流を流し、ジュール熱でマスクを加熱し、マスクに付
着した膜を除去する方法を示した図である。１は基板及
び基板ホルダー、２は基板に有機材料をパターニング蒸
着するためのマスク、３は成膜時間を管理するためのシ
ャッター、４は成膜材料を蒸発させるための蒸発源、５
は蒸着可能な圧力を維持するための真空槽、６は不要な
部分に着膜することを防ぐ防着板、７はマスク加熱のた
めのスライダック電源を示す。９は電流を真空槽内に導
入するためのフィードスルーを示す。１０は真空槽内配
線を示す。Embodiment 2 FIG. 3 is a schematic view showing another embodiment of the method for regenerating a mask for vacuum deposition of an organic film according to the present invention. FIG. 3 is a diagram showing a method of applying a current directly to the mask, heating the mask with Joule heat, and removing a film attached to the mask. 1 is a substrate and a substrate holder, 2 is a mask for patterning and depositing an organic material on the substrate, 3 is a shutter for controlling the film formation time, 4 is an evaporation source for evaporating the film formation material, 5
Denotes a vacuum tank for maintaining a pressure capable of vapor deposition, 6 denotes an anti-adhesion plate for preventing deposition on unnecessary portions, and 7 denotes a Slidac power supply for heating the mask. Reference numeral 9 denotes a feedthrough for introducing a current into the vacuum chamber. Reference numeral 10 denotes wiring in a vacuum chamber.
【００３１】実施例１と同様の実験を行った。その実験
方法及び結果を以下に示す。真空槽内圧力をｌ×１０-4
Ｐａ以下に排気した後、蒸発源（クヌーセンセル）を約
２５０℃にコントロールする。水晶式膜厚モニターによ
り蒸着速度が安定すること（約０．２ｎｍ／ｓ）を確認
し、シャッターを開き成膜を開始する。水晶式膜厚モニ
ターで０．３μｍの膜厚が着膜したことを確認しシャッ
ターを閉める。この膜厚の成膜を１０回行い、成膜され
たパターンの測定を行った。The same experiment as in Example 1 was performed. The experimental method and results are shown below. Reduce the pressure in the vacuum chamber to 1 × 10 -4
After evacuation to Pa or less, the evaporation source (Knudsen cell) is controlled at about 250 ° C. The deposition rate is confirmed to be stable (about 0.2 nm / s) by a quartz crystal film thickness monitor, and the shutter is opened to start film formation. After confirming that a film thickness of 0.3 μm has been formed on the quartz crystal film thickness monitor, close the shutter. Film formation with this film thickness was performed 10 times, and the formed pattern was measured.
【００３２】テスト用マスクパターンは実施例１と同じ
物を使用した。１回目の成膜では、４９μｍ〜５０μｍ
の誤差範囲で成膜ができたのに対し、１０回成膜後は、
４６μｍ〜４９μｍの誤差になった。ここで、真空中で
マスクを３００℃になるようにスライダック電源の電圧
を設定し加熱、１０分保持し、膜の除去を行い、常温に
なるのを待ち再度成膜を行った。パターンを測定した結
果は、実施例１と同様に４９μｍ〜５０μｍの誤差範囲
に収まった。この結果より、マスクに付着した膜は、マ
スクを加熱することにより除去されたと判断できる。The same test mask pattern as in Example 1 was used. In the first film formation, 49 μm to 50 μm
While the film could be formed within the error range of
The error was 46 μm to 49 μm. Here, the voltage of the Slidac power supply was set so that the temperature of the mask was 300 ° C. in a vacuum, heated, held for 10 minutes, the film was removed, and after waiting for room temperature, the film was formed again. The measurement result of the pattern was within the error range of 49 μm to 50 μm as in the case of Example 1. From this result, it can be determined that the film attached to the mask has been removed by heating the mask.
【００３３】実施例３ 図４は本発明の有機膜真空蒸着用マスク再生方法の他の
実施態様を示す概略図である。同図４は、マスク加熱方
法として、誘導加熱を用いてマスクに付着した膜を除去
する方法を示した図である。７は誘導加熱用高周波電源
を示し、今回は１０ｋＨｚの周波数の電源を使用した。
９は真空槽内に高周波を導入するためのフィードスル
ー、１０は真空槽内配線、１１はマスクを誘導加熱する
ための誘導加熱コイルを示す。誘導コイルは、放電防止
のための絶縁処理（セラミックコ―ティング）がなされ
ている。Embodiment 3 FIG. 4 is a schematic view showing another embodiment of the method of reproducing a mask for vacuum deposition of an organic film according to the present invention. FIG. 4 is a diagram showing a method of removing a film attached to a mask using induction heating as a mask heating method. Reference numeral 7 denotes a high-frequency power supply for induction heating. In this case, a power supply having a frequency of 10 kHz was used.
Reference numeral 9 denotes a feedthrough for introducing high frequency into the vacuum chamber, 10 denotes wiring in the vacuum chamber, and 11 denotes an induction heating coil for induction heating the mask. The induction coil is subjected to insulation treatment (ceramic coating) for preventing discharge.
【００３４】実施例１と同様の実験を行った。その実験
方法及び結果を以下に示す。真空槽内圧力をｌ×１０-4
Ｐａ以下に排気した後、蒸発源を（クヌーセンセル）を
約２５０℃にコントロールする。水晶式膜厚モニターに
より蒸着速度が安定すること（約０．２ｎｍ／ｓ）を確
認し、シャッターを開き成膜を開始する。水晶式膜厚モ
ニターで０．３μｍの膜厚が着膜したことを確認しシャ
ッターを閉める。この膜厚の成膜を１０回行い、成膜さ
れたパターンの測定を行った。The same experiment as in Example 1 was performed. The experimental method and results are shown below. Reduce the pressure in the vacuum chamber to 1 × 10 -4
After evacuation to Pa or less, the evaporation source (Knudsen cell) is controlled at about 250 ° C. The deposition rate is confirmed to be stable (about 0.2 nm / s) by a quartz crystal film thickness monitor, and the shutter is opened to start film formation. After confirming that a film thickness of 0.3 μm has been formed on the quartz crystal film thickness monitor, close the shutter. Film formation with this film thickness was performed 10 times, and the formed pattern was measured.
【００３５】テスト用マスクパターンは実施例１と同じ
物を使用した。１回目の成膜では、４９μｍ〜５０μｍ
の誤差範囲で成膜ができたのに対し、１０回成膜後は、
４６μｍ〜４９μｍの誤差になった。ここで、真空中で
マスクを３００℃になるように高周波電源の出力を設定
し加熱、１０分保持し、膜の除去を行い、常温になるの
を待ち再度成膜を行った。パターンを測定した結果は、
実施例１及び２と同様に４９μｍ〜５０μｍの誤差範囲
に収まった。この結果より、マスクに付着した膜は、マ
スクを加熱することにより除去されたと判断できる。The same test mask pattern as in Example 1 was used. In the first film formation, 49 μm to 50 μm
While the film could be formed within the error range of
The error was 46 μm to 49 μm. Here, the output of the high-frequency power source was set so that the temperature of the mask was set to 300 ° C. in vacuum, heating was performed, the temperature was maintained for 10 minutes, the film was removed, and the film was formed again after waiting for room temperature. The result of measuring the pattern is
As in Examples 1 and 2, the error was within the error range of 49 μm to 50 μm. From this result, it can be determined that the film attached to the mask has been removed by heating the mask.
【００３６】[0036]
【発明の効果】以上説明した様に、本発明によれば以下
に示す効果が得られる。 １）成膜後、容易に有機膜を除去でき、毎回クリーニン
グ可能になるため、実施例に示したように再現性の良い
パターニング精度が得られる。 ２）真空槽を大気開放するサイクルが延びる。材料の投
入サイクルで真空槽を大気開放すれば良く、少なくとも
クリーニング機構がないときに比べ２〜３倍以上（材料
の投入量や膜厚によって異なる）に延びる。As described above, according to the present invention, the following effects can be obtained. 1) Since the organic film can be easily removed after film formation and cleaning can be performed every time, patterning accuracy with good reproducibility can be obtained as shown in the embodiment. 2) The cycle of opening the vacuum chamber to the atmosphere is extended. The vacuum chamber may be opened to the atmosphere in the material charging cycle, and the length is at least two to three times (depending on the material charging amount and film thickness) as compared with the case where there is no cleaning mechanism.
【００３７】真空槽を、一度大気に開放した後、成膜で
きる状態（真空の圧力、水の分圧など）に戻すまで、真
空排気で１時間、ベーキング３時間、ベーキング後の真
空排気に５時間、合計９時間を要している。この時間を
必要とする回数が減少するため生産効率が向上する。After the vacuum chamber is once opened to the atmosphere, it is evacuated for 1 hour, baked for 3 hours, and evacuated after baking until it returns to a film forming state (vacuum pressure, partial pressure of water, etc.). It takes 9 hours in total. Since the number of times that this time is required is reduced, the production efficiency is improved.
【００３８】３）マスクをメンテナンス時に取り外さな
いため、マスクの位置調整は、最初にセットする時のみ
であリマスクの位置調整機構が必要なくなる。マスク位
置調整機構は、方法、形状により価格は異なるが大幅の
コストダウンとなる。 ４）マスク交換時の、マスク位置調整に要する時間は、
１回あたり約４時間必要であるが、この時間が不要とな
る。 ５）マスクに付着した有機膜のみ除去できる。プラズマ
エッチングのように、蒸発源ルツボに内の材料まで除去
してしまうことがない。3) Since the mask is not removed at the time of maintenance, the position adjustment of the mask is performed only when the mask is first set, and the re-mask position adjusting mechanism is not required. The price of the mask position adjusting mechanism differs depending on the method and shape, but the cost is greatly reduced. 4) The time required for mask position adjustment when changing the mask is as follows:
Approximately four hours are required each time, but this time is unnecessary. 5) Only the organic film attached to the mask can be removed. Unlike the plasma etching, the material inside the evaporation source crucible is not removed.
【図１】本発明の有機膜真空蒸着用マスク再生方法の一
実施態様を示す概略図である。FIG. 1 is a schematic view showing one embodiment of a method of regenerating a mask for vacuum deposition of an organic film according to the present invention.
【図２】本発明の実施例１に使用したテストマスクを示
す説明図である。FIG. 2 is an explanatory diagram illustrating a test mask used in the first embodiment of the present invention.
【図３】本発明の有機膜真空蒸着用マスク再生方法の他
の実施態様を示す概略図である。FIG. 3 is a schematic view showing another embodiment of the method for regenerating a mask for vacuum deposition of an organic film according to the present invention.
【図４】本発明の有機膜真空蒸着用マスク再生方法の他
の実施態様を示す概略図である。FIG. 4 is a schematic view showing another embodiment of the method for regenerating a mask for vacuum deposition of an organic film according to the present invention.
【図５】従来の真空処理装置を示す説明図である。FIG. 5 is an explanatory view showing a conventional vacuum processing apparatus.
１ 基板および基板ホルダー ２ マスク ３ シャッター ４ 蒸発源 ５ 真空槽 ６ 防着板 ７ 電源 ８ 加熱ヒーター ９ フィードスルー １０ 真空内配線 １１ 誘導加熱コイル １２ プラズマ用電極 １３ 対向アース電極 １４ 排気装置 DESCRIPTION OF SYMBOLS 1 Substrate and substrate holder 2 Mask 3 Shutter 4 Evaporation source 5 Vacuum tank 6 Deposition plate 7 Power supply 8 Heating heater 9 Feedthrough 10 Wiring in vacuum 11 Induction heating coil 12 Plasma electrode 13 Counter earth electrode 14 Exhaust device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 上野 和則 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 Ｆターム(参考） 4K029 BA62 DA09 HA01 ──────────────────────────────────────────────────続 き Continued on front page (72) Inventor Kazunori Ueno 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 4K029 BA62 DA09 HA01
Claims (9)
記マスクに付着した有機膜を除去するマスクの再生方法
において、前記マスクに付着した有機膜を加熱処理によ
り真空を破らずに除去する事を特徴とする有機膜真空蒸
着用マスク再生方法。1. A method of regenerating a mask for removing an organic film adhered to the mask by vacuum evaporation of the organic film using the mask, wherein the organic film adhered to the mask is removed by heat treatment without breaking vacuum. A method for regenerating a mask for vacuum deposition of an organic film.
材料の蒸発温度又は昇華温度以上に昇温し付着した有機
膜を除去する事を特徴とする請求項１に記載の有機膜真
空蒸着用マスク再生方法。2. The vacuum evaporation of an organic film according to claim 1, wherein the heat treatment removes the adhered organic film by heating the mask to a temperature higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film. For mask reproduction method.
熱できるヒーターを使用して、有機膜の有機材料の蒸発
温度又は昇華温度以上にマスクを昇温し付着した有機膜
を除去する事を特徴とする請求項１または２に記載の有
機膜真空蒸着用マスク再生方法。3. The method according to claim 1, wherein the heat treatment is performed by using a heater capable of radiant heating or conduction heating to raise the temperature of the mask to a temperature equal to or higher than the evaporation temperature or the sublimation temperature of the organic material of the organic film to remove the attached organic film. The method for regenerating a mask for vacuum deposition of an organic film according to claim 1 or 2.
を流してジュール熱で有機膜の有機材料の蒸発温度又は
昇華温度以上に前記マスクを昇温し付着した有機膜を除
去する事を特徴とする請求項１または２に記載の有機膜
真空蒸着用マスク再生方法。4. The heat treatment is characterized in that an electric current is directly passed through the mask to raise the temperature of the mask to above the evaporation temperature or sublimation temperature of the organic material of the organic film by Joule heat to remove the attached organic film. The method for regenerating a mask for vacuum deposition of an organic film according to claim 1 or 2.
の有機材料の蒸発温度又は昇華温度以上に前記マスクを
昇温し付着した有機膜を除去する事を特徴とする請求項
１または２に記載の有機膜真空蒸着用マスク再生方法。5. The method according to claim 1, wherein the heat treatment comprises heating the mask to a temperature higher than an evaporation temperature or a sublimation temperature of the organic material of the organic film by induction heating to remove the attached organic film. The method for regenerating a mask for vacuum deposition of an organic film according to the above.
にて構成される有機膜真空蒸着装置において、有機膜真
空蒸着によりマスクに付着した有機膜を加熱処理により
真空を破らずに除去するマスク再生手段を具備すること
を特徴とする有機膜真空蒸着装置。6. An organic film vacuum deposition apparatus comprising an evaporation source, a mask, a vacuum chamber, and an exhaust device, wherein a mask for removing an organic film adhered to the mask by the organic film vacuum deposition without breaking vacuum by a heat treatment. An organic film vacuum deposition apparatus comprising a reproducing means.
熱または伝導加熱できるヒーター、該ヒーターの温度を
制御できる電源で構成され、前記マスクに付着した有機
膜の有機材料の蒸発温度又は昇華温度以上にマスクをヒ
ーターにより昇温して付着した有機膜を除去する加熱手
段からなる請求項６に記載の有機膜真空蒸着装置。7. The mask regenerating means comprises a heater capable of radiantly or conductively heating the mask, a power supply capable of controlling the temperature of the heater, and is equal to or higher than an evaporation temperature or a sublimation temperature of an organic material of an organic film attached to the mask. 7. The organic film vacuum deposition apparatus according to claim 6, further comprising heating means for removing the organic film attached by raising the temperature of the mask by a heater.
流すことができる配線、フィードスルー及び前記マスク
の温度を制御できる電源で構成され、前記マスクに付着
した有機膜の有機材料の蒸発温度又は昇華温度以上にマ
スクを電流のジュール熱により昇温して付着した有機膜
を除去する加熱手段からなる請求項６に記載の有機膜真
空蒸着装置。8. The mask reproducing means comprises a wiring capable of flowing a current through the mask, a feed-through, and a power supply capable of controlling the temperature of the mask, wherein the evaporation temperature of the organic material of the organic film attached to the mask or 7. The organic film vacuum deposition apparatus according to claim 6, further comprising heating means for raising the temperature of the mask above the sublimation temperature by the Joule heat of the current to remove the attached organic film.
めの誘導コイルおよび誘導加熱用高周波電源で構成さ
れ、前記マスクに付着した有機膜の有機材料の蒸発温度
又は昇華温度以上にマスクを電磁誘導により昇温して付
着した有機膜を除去する加熱手段からなる請求項６に記
載の有機膜真空蒸着装置。9. The mask regenerating means comprises an induction coil for induction heating and a high-frequency power supply for induction heating, and electromagnetically induces the mask at a temperature higher than an evaporation temperature or a sublimation temperature of an organic material of an organic film attached to the mask. 7. The organic film vacuum deposition apparatus according to claim 6, comprising heating means for removing the adhered organic film by raising the temperature by the method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09580999A JP3734239B2 (en) | 1999-04-02 | 1999-04-02 | Organic film vacuum deposition mask regeneration method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09580999A JP3734239B2 (en) | 1999-04-02 | 1999-04-02 | Organic film vacuum deposition mask regeneration method and apparatus |
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| Publication Number | Publication Date |
|---|---|
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| JP3734239B2 JP3734239B2 (en) | 2006-01-11 |
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ID=14147764
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|---|---|---|---|
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Cited By (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1319732A1 (en) * | 2001-12-12 | 2003-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and method and cleaning method |
| JP2004300495A (en) * | 2003-03-31 | 2004-10-28 | Nippon Seiki Co Ltd | Evaporation mask and evaporation method using the same |
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